CN2730890Y - Horizontal ion implantation silicon carbide high-temp. annealing device - Google Patents
Horizontal ion implantation silicon carbide high-temp. annealing device Download PDFInfo
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- CN2730890Y CN2730890Y CN 200420092867 CN200420092867U CN2730890Y CN 2730890 Y CN2730890 Y CN 2730890Y CN 200420092867 CN200420092867 CN 200420092867 CN 200420092867 U CN200420092867 U CN 200420092867U CN 2730890 Y CN2730890 Y CN 2730890Y
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Abstract
The utility model relates to a horizontal ion implantation silicon carbide high-temperature annealing device. The quartz pipe annealing chamber of the horizontal ion implantation silicon carbide high-temperature annealing device is arranged horizontally, and the two ends of the quartz pipe annealing chamber are sealed by water cooling flange plates. One end of the water cooling flange plates is provided with the sample introduction gate of the annealing chamber, the center of the sample introduction gate is provided with a small hole which is the inlet of protective gas in the annealing process, and a sealing ring seals and connects the sample introduction gate and the flange plates. The center of the other end of the water cooling flange plates is provided with a horizontal pipeline, the outer end of the pipeline is a viewing window, the upper side of the pipeline is vertically provided with a deflation valve, and the lower side of the pipeline is vertically provided with an extraction opening. The middle part of the surface of the outer circle of the quartz pipe annealing chamber is winded with a spiral pipe induction heating coil. The opposite position of the spiral pipe induction heating coil in the inner chamber of the annealing chamber is provided with an induction heating body. The utility model can satisfy the manufacture of various silicon carbide components in high temperature, high power and high frequency. The utility model can be also suitable to the annealing activation technology of other semiconductors. The horizontal ion implantation silicon carbide high-temperature annealing device is flexible. The horizontal ion implantation silicon carbide high-temperature annealing device has the advantages of wide pressure regulating range, easy control and higher annealing temperature.
Description
Technical field
The utility model relates to a kind of high temperature annealing device, the particularly a kind of ion implantation silicon carbide of horizontal (SiC) high temperature annealing device based on the heating of copper spiral tube radio frequency.
Background technology
With silicon carbide (SiC) is that the third generation wide band gap semiconducter of representative has many good characteristics such as high and fabulous physics of forbidden band loose (silicon (Si) 3 times), thermal conductivity height (silicon (Si) 3.3 times), breaking down field strength height (silicon (Si) 10 times), saturated electrons drift speed height (silicon (Si) 2.5 times), working temperature height (400 ~ 600 ℃), bonded energy and chemical stability, aspect the device application of high temperature, high-power, anti-irradiation advantageous potentiality and advantage is being arranged.Silicon carbide (SiC) is mainly used in the making of high temperature, high power device, in order to reduce the loss of device to power, just must reduce series resistance and square resistance, promptly needs the heavily doped layer material.Consider that the spread coefficient of impurity atoms in silicon carbide (SiC) is very little, the diffusion of impurity is negligible in the temperature range below 1800 ℃, though realize adulterating method often use in silicon (Si) technology with the thermodiffusion method, but this technology is infeasible in the doping of silicon carbide (SiC), therefore, ion implantation having become realized heavily doped a kind of important means in silicon carbide (SiC) the electron device manufacture craft.After in case impurity atoms is injected in the silicon carbide (SiC), two kinds of possibilities are arranged, the one, impurity atoms occupies the interstitial site in the lattice, form interstitial atom, another kind of possibility is to reside on the crystallographic site of silicon carbide (SiC), and therefore, the work that will do after ion implantation is transferred to alternative site with impurity atoms from interstitial site exactly, and its electricity is activated, this activation is finished by high temperature annealing such as (as Ar gas) in rare gas element.In order to eliminate lattice damage fully, the silicon carbide after the injection (SiC) needs through high-temperature annealing process.Carrying out high temperature annealing after the injection has two purposes, i.e. activator impurity and eliminate lattice damage fully.Annealing temperature is the highest will to reach 1700 ℃, and concrete annealing conditions depends on the impurity atoms that is injected, and the activation of impurity had both depended on impurity atoms, also depends on silicon carbide (SiC) crystal formation (as 6H-SiC and 4H-SiC etc.).Silicon (Si) annealing device commonly used can not satisfy the requirement of silicon carbide (SiC) annealed.
The utility model content
The purpose of this utility model is a kind of ion implantation silicon carbide high temperature annealing of horizontal device based on the heating of copper spiral tube radio frequency of design, utilize this device can realize that not only the annealing of the n-type foreign ion of silicon carbide (SiC) activates (annealing temperature is generally about 1500 ℃), and the annealing that can realize the p-type foreign ion of silicon carbide (SiC) activates (annealing temperature is generally about 1700 ℃), to satisfy the making of various high temperature, high-power, high frequency silicon carbide (SiC) device.
For achieving the above object, technical solution of the present utility model provides a kind of ion implantation silicon carbide high temperature annealing device, form by annealing chamber, ring flange, annealing chamber's sample introduction door, venting valve, bleeding point, viewing window, load coil and induction heating body, wherein, silica tube annealing chamber is horizontally disposed with, two ends are closed by the water-cooling flange disk seal, are installed with support on the ring flange, and support is fixedly arranged in ground with annealing chamber's level; Adopt the sealing of " O " RunddichtringO between annealing chamber and the water-cooling flange dish;
Water-cooling flange dish one end is provided with the sample introduction door of annealing chamber, and there is an aperture at the sample introduction door center, and the inlet of shielding gas is tightly connected with " O " RunddichtringO between sample introduction door and the ring flange when being annealing;
Water-cooling flange dish the other end center is provided with the pipeline of a level, and the outer end of pipeline is a viewing window, and the upper vertical of pipeline is provided with the venting valve, and downside vertically is provided with bleeding point;
The periphery circular surfaces middle part of silica tube annealing chamber is arranged with the spiral tube load coil, and in the inner chamber of annealing chamber, the position relative with the spiral tube load coil is provided with the induction heating body.
Described high temperature annealing device, the pipeline of its described ring flange, annealing chamber's sample introduction door, level, venting valve, bleeding point are to be made by stainless material, and " O " RunddichtringO is a rubber ring, and the spiral tube load coil is the copper spiral tube.
Described high temperature annealing device, its described induction heating body comprises quartz boat, thermal insulation layer and induction heater, and quartz boat is placed in the inner chamber of annealing chamber, and thermal insulation layer is wrapped in induction heater wherein, and is placed in the quartz boat.
Described high temperature annealing device, its described ring flange, there is a circular tank centre, draws two water nozzles at the two ends of tank along the radial direction of ring flange;
Described high temperature annealing device, its described quartz boat is made up of hook circle, connecting arm, quartz boat body and perforated bottom, and perforated bottom is sealed an end of quartz boat body, and the other end edge of opening of quartz boat body is fixed with connecting arm, the affixed hook circle in the outer end of connecting arm; Its external diameter is slightly less than the internal diameter of silica tube annealing chamber, and intermediate gaps is less than 1 millimeter.
Described high temperature annealing device, its described thermal insulation layer comprises the lid of thermal insulation layer body and one side, wherein, the sealing of thermal insulation layer body one end, the other end is an opening, this opening is suitable with lid, and it is a thermometric window that the upper center of thermal insulation layer body has a groove, adopts the pyroscope thermometric; The inwall of thermal insulation layer body and induction heater periphery are suitable; The inwall of the periphery of thermal insulation layer body and quartz boat body is suitable, and the thermal insulation layer body can be put into the quartz boat body smoothly.
Described high temperature annealing device, its described induction heater, there is a through hole centre, and its surface and through-hole wall are covered with one deck silicon carbide (SiC) coating, or its surface silicon carbide (SiC) pipe identical with the affixed shape of through-hole wall; The inwall of its periphery and thermal insulation layer body is suitable, and induction heater can be put into the thermal insulation layer body smoothly.
Described high temperature annealing device, its described annealing chamber is a round shape, and induction heater is right cylinder, and quartz boat and thermal insulation layer body are drum shape; Induction heater is formed by the high purity graphite manufacturing, and thermal insulation layer is a graphite felt.
Described high temperature annealing device, its described intermediary through hole is rectangular through-hole.
The technical measures that the utility model is taked have the following aspects: the one, and the horizontal silica tube structure that adopts spiral tube to heat; The 2nd, adopt a drum shape quartz boat, strengthen the simplification of sample handing-over; The 3rd, adopt the insulation measure of graphite induction heater, to strengthen heating efficiency, improve working temperature; The 4th, the gaseous tension during annealing is adjustable, and its regulation range is 10
-3Hold in the palm in 760 holders, to reach vacuum, low pressure and the requirement of normal pressure annealing process.
The utility model is to activate the high temperature annealing device that designs for the annealing of ion implantation silicon carbide (SiC), all adopt high-temperature material in the annealing chamber, this device also is applicable to other semi-conductive annealing activation technology, as monocrystalline (silicon (Si)), germanium-silicon alloy (Ge Si), gan (GaN) etc.
Characteristics of the present utility model be simple and easy, flexible, many usefulness, pressure regulation range wide, be easy to control, higher annealing temperature is arranged, can reach 2000 ℃.The utility model heating is quick, temperature is high, is well suited for high temperature rapid thermal annealing, and biggest advantage is under low pressure to anneal, and this is that the conventional annealing system is not available.
Description of drawings
Fig. 1 is the ion implantation silicon carbide of the utility model horizontal (SiC) high temperature annealing device synoptic diagram;
Fig. 2 is a high temperature annealing sample chamber structural representation in the utility model quartz boat;
Fig. 3 is the quartz boat structural representation;
Fig. 4 is a graphite felt thermal insulation material heat insulation layer structure synoptic diagram; Wherein: Fig. 4 (a) is a sectional view; Fig. 4 (b) and (c) be respectively that synoptic diagram is looked on drum shape graphite felt thermal insulation layer body 122 and graphite felt lid 121 the right side;
Fig. 5 is the structural representation of graphite induction heater; Wherein Fig. 5 (a) is the sectional view of induction heater 13, and Fig. 5 (b) is that synoptic diagram is looked on the right side of induction heater 13.
Embodiment
The ion implantation silicon carbide of the horizontal that Fig. 1 provides (SiC) high temperature annealing device synoptic diagram.This annealing device is a ultra-high vacuum system, is made by steel flange dish and silica tube chamber.As shown in Figure 1, this device is made up of silica tube annealing chamber 1, water-cooled steel flange dish 2, annealing chamber's sample introduction door 3, venting valve 4, bleeding point 5, viewing window 6, copper spiral tube load coil 7 and induction heating body 13.Wherein, cylindrical quartz tube annealing chamber 1 is horizontally disposed with, and two ends are installed with support 8 by 2 sealings of water-cooled steel flange dish on the steel flange dish 2, and support 8 is fixedly arranged in ground with annealing chamber's 1 level.Adopt the seal with elastometic washer of " O " type between silica tube annealing chamber 1 and the water-cooled steel flange dish 2.Water-cooling flange dish 2 usefulness stainless steels are made, and there is a circular tank centre, draw two water nozzles at the two ends of tank along the radial direction of ring flange, and purpose is that dress is irritated water coolant with cooling " O " type rubber ring in tank.
One end water-cooling flange dish 2 is provided with the sample introduction door 3 of annealing chamber 1, and sample introduction door 3 is made by stainless material, and there is an aperture 9 at the center, is connected with the seal with elastometic washer of " O " type between the inlet of shielding gas when being annealing, sample introduction door 3 and water-cooling flange dish 2.
The other end water-cooling flange dish 2 centers are provided with the pipeline 10 of a level, and the outer end of pipeline 10 is viewing windows 6, and the upper vertical of pipeline 10 is provided with venting valve 4, and downside vertically is provided with bleeding point 5.
The periphery circular surfaces of silica tube annealing chamber 1 middle part is arranged with copper spiral tube load coil 7, and in the inner chamber of annealing chamber 1, the position relative with copper spiral tube load coil 7 is provided with induction heating body 13.Vacuum tightness in the annealing chamber 1 reaches 10
-4～10
-3Pa.Adopt copper spiral tube induction heating mode.
Referring to Fig. 2, Fig. 3, Fig. 4 and Fig. 5.As shown in Figure 2, the outermost layer of the induction heating body of placing in the silica tube annealing chamber 1 13 is drum shape quartz boat body 11a, and its external diameter is slightly less than the internal diameter of silica tube annealing chamber 1, and intermediate gaps is less than 1 millimeter.Drum shape quartz boat 11 is made up of hook circle 16, connecting arm 17, drum shape quartz boat body 11a and perforated bottom 111, as shown in Figure 3, perforated bottom 111 is sealed the end of quartz boat body 11a, and the other end opening of quartz boat body 11a is fixed with connecting arm 17, the affixed hook circle 16 in the outer end of connecting arm 17.Hook circle 16 is used for transmitting annealing specimen and uses.The gas that needs protection during annealing, as argon gas (Ar) etc., so the aperture on the quartz boat bottom 111 is used for ventilation.
Graphite felt is a heat-insulating material, it be positioned at graphite induction heater 13 around constitute graphite felt thermal insulation layer 12, to reduce calorific loss, strengthen heating efficiency.The structure of graphite felt thermal insulation layer 12 as shown in Figure 4, Fig. 4 (a) is a sectional view, comprising the graphite felt of drum shape graphite felt thermal insulation layer body 122 and one side lid 121, Fig. 4 (b) and (c) be respectively that drum shape graphite felt thermal insulation layer body 122 and graphite felt are covered 121 the right side and looked synoptic diagram.Wherein, it is 121 suitable that the opening of drum shape graphite felt thermal insulation layer body 122 and graphite felt are covered, and it is thermometric windows that the upper center of thermal insulation layer body 122 has a groove 18, adopts the pyroscope thermometric.The periphery circle of thermal insulation layer body 122 is suitable with the inner round wall of drum shape quartz boat body 11a, and graphite felt thermal insulation layer body 122 can be put into quartz boat body 11a smoothly.
The structure of graphite induction heater 13 as shown in Figure 5, graphite induction heater 13 is a hollow cylinder 131, form by the high purity graphite manufacturing, its periphery circle is suitable with the inner round wall of drum shape graphite felt thermal insulation layer body 122, and graphite induction heater 13 can be put into graphite felt thermal insulation layer body 122 smoothly.
Fig. 5 (a) is the sectional view of induction heater 13, and Fig. 5 (b) is that synoptic diagram is looked on the right side of induction heater 13.Right cylinder 131 right sides are looked and are presented circle, in the middle of it is a rectangular through-hole 132, consider the structural performance of graphite, need handle surfaces externally and internally, promptly cover the about 1 millimeter silicon carbide of a layer thickness (SiC) coating 14 at surfaces externally and internally, or in adaptive silicon carbide (SiC) pipe 14 of rectangular through-hole 132 internal surfaces sheathed, about 1 millimeter of thickness of pipe.Treat that the ion implantation silicon carbide of annealed (SiC) sample 15 just is placed on the bottom surface of rectangular through-hole 132.
Workflow of the present utility model is:
(1) before carrying out 15 annealing of ion implantation silicon carbide (SiC) sample, cleans and treat annealing specimen 15.
(2) open the sample introduction door 3 of annealing chamber 1, the quartz boat 11 in the annealing chamber 1 is pulled out with quartzy operating stick.
(3) take off graphite felt lid 121, to treat that annealing specimen 15 is placed in the rectangular opening 132 of graphite induction heater 13, load onto graphite felt lid 121, quartz boat 11 is pushed middle part in the annealing chamber 1 with quartzy operating stick, close sample introduction door 3, vacuumize by 5 pairs of annealing systems of bleeding point.
(4) before the heating, feed suitable Annealing Protection gas,,,, sample 15 is carried out anneal as annealing temperature, annealing pressure and annealing time etc. according to the annealing conditions for the treatment of annealing specimen 15 as argon gas (Ar) by the inlet mouth on the sample introduction door 39.
(5) behind the annealing end-of-job, can under argon gas (Ar) atmosphere, lower the temperature earlier, after certain temperature, vacuumize by 5 pairs of annealing systems of bleeding point, in the breaking of vacuum temperature.
(6) open charging valve 4, with shielding gas such as nitrogen (N
2) annealing chamber 1 is pressurized to normal pressure (normal atmosphere), the sample 15 after will annealing with step (2) and (3) takes out.
(7) when not using annealing chamber 1, can pump it to vacuum, and make it maintain vacuum state.
Claims (9)
1. the ion implantation silicon carbide high temperature annealing of horizontal device, form by annealing chamber, ring flange, annealing chamber's sample introduction door, venting valve, bleeding point, viewing window, load coil and induction heating body, it is characterized in that: wherein, silica tube annealing chamber is horizontally disposed with, two ends are sealed by ring flange, be installed with support on the ring flange, support is installed with annealing chamber's level; Adopt the sealing of " O " RunddichtringO between annealing chamber and the ring flange;
Ring flange one end is provided with the sample introduction door of annealing chamber, and there is an aperture at the sample introduction door center, communicates with the storage tank outlet of shielding gas, is tightly connected with " O " RunddichtringO between sample introduction door and the ring flange;
Ring flange the other end center is provided with the pipeline of a level, and the outer end of pipeline is a viewing window, and the upper vertical of pipeline is provided with the venting valve, and downside vertically is provided with bleeding point;
The periphery circular surfaces middle part of silica tube annealing chamber is arranged with load coil, and in the inner chamber of annealing chamber, the position relative with load coil is provided with the induction heating body.
2. high temperature annealing device as claimed in claim 1, it is characterized in that: the pipeline of described ring flange, annealing chamber's sample introduction door, level, venting valve, bleeding point are to be made by stainless material, " O " RunddichtringO is a rubber ring, and load coil is a copper spiral tube load coil.
3. high temperature annealing device as claimed in claim 1, it is characterized in that: described induction heating body, comprise quartz boat, thermal insulation layer and induction heater, quartz boat is placed in the inner chamber of annealing chamber, thermal insulation layer is wrapped in induction heater wherein, and is placed in the quartz boat.
4. high temperature annealing device as claimed in claim 1 is characterized in that: described ring flange, centre have a circular tank, draw two water nozzles at the two ends of tank along the radial direction of ring flange.
5. high temperature annealing device as claimed in claim 3, it is characterized in that: described quartz boat, to form by hook circle, connecting arm, quartz boat body and perforated bottom, perforated bottom is sealed an end of quartz boat body, the other end edge of opening of quartz boat body is fixed with connecting arm, the affixed hook circle in the outer end of connecting arm; Its external diameter is slightly less than the internal diameter of silica tube annealing chamber, and intermediate gaps is less than 1 millimeter.
6. high temperature annealing device as claimed in claim 3 is characterized in that: described thermal insulation layer comprises the lid of thermal insulation layer body and one side, wherein, the sealing of thermal insulation layer body one end, the other end is an opening, this opening is suitable with lid, and the upper center of thermal insulation layer body has a groove, is a thermometric window; The inwall of thermal insulation layer body and induction heater periphery are suitable; The inwall of the periphery of thermal insulation layer body and quartz boat body is suitable, and the thermal insulation layer body can be put into the quartz boat body smoothly.
7. high temperature annealing device as claimed in claim 3, it is characterized in that: described induction heater, there is a through hole centre, and its surface and through-hole wall are covered with one deck silicon carbide (SiC) coating, or its surface silicon carbide (SiC) pipe identical with the affixed shape of through-hole wall; The inwall of its periphery and thermal insulation layer body is suitable, and induction heater can be put into the thermal insulation layer body smoothly.
8. as claim 1 or 3 described high temperature annealing devices, it is characterized in that: described annealing chamber is a round shape, and induction heater is right cylinder, and quartz boat and thermal insulation layer body are drum shape; Induction heater is formed by the high purity graphite manufacturing, and thermal insulation layer is a graphite felt.
9. high temperature annealing device as claimed in claim 7 is characterized in that: described intermediary through hole is rectangular through-hole.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200420092867 CN2730890Y (en) | 2004-09-22 | 2004-09-22 | Horizontal ion implantation silicon carbide high-temp. annealing device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200420092867 CN2730890Y (en) | 2004-09-22 | 2004-09-22 | Horizontal ion implantation silicon carbide high-temp. annealing device |
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| CN2730890Y true CN2730890Y (en) | 2005-10-05 |
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Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102534805A (en) * | 2010-12-14 | 2012-07-04 | 北京天科合达蓝光半导体有限公司 | Silicon carbide crystal annealing process |
| CN102735714A (en) * | 2012-07-16 | 2012-10-17 | 烟台大学 | Particle organic carbon and total organic carbon determinator and determination method |
| CN102747425A (en) * | 2012-07-02 | 2012-10-24 | 东莞市天域半导体科技有限公司 | Horizontal type silicon carbide high-temperature oxidation device |
| CN101984153B (en) * | 2009-12-24 | 2013-03-20 | 新疆天科合达蓝光半导体有限公司 | Annealing process for reducing stress of silicon carbide crystals |
| CN103014873A (en) * | 2012-09-18 | 2013-04-03 | 苏州四海常晶光电材料有限公司 | Pure-oxygen-atmosphere annealing device and method |
| CN103397170A (en) * | 2013-08-22 | 2013-11-20 | 西北有色金属研究院 | Atmosphere protective high-frequency induction heating and continuous annealing method and device for tube stocks and wire rods |
| CN104185321A (en) * | 2014-08-15 | 2014-12-03 | 哈尔滨宏万智科技开发有限公司 | Heating device of pressure container |
| CN109304227A (en) * | 2018-08-24 | 2019-02-05 | 中国科学院合肥物质科学研究院 | A kind of infrared tubular heater sample cell that new application is tested in thermal desorption |
| CN111621853A (en) * | 2020-05-29 | 2020-09-04 | 武汉大学 | Pulse microwave and radio frequency electromagnetic induction two-stage crystal growth annealing device |
| CN112516916A (en) * | 2020-12-11 | 2021-03-19 | 河北同光晶体有限公司 | Ultrahigh vacuum silicon carbide raw material synthesis furnace system |
| WO2022160547A1 (en) * | 2021-02-01 | 2022-08-04 | 中国电子科技集团公司第四十八研究所 | Reaction chamber of silicon carbide epitaxial furnace |
| RU2824074C1 (en) * | 2021-02-01 | 2024-08-01 | Зе 48 Резерч Институт Оф Чайна Электроникс Текнолоджи Груп Корпорейшн | Silicon carbide epitaxial reactor combustion chamber |
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2004
- 2004-09-22 CN CN 200420092867 patent/CN2730890Y/en not_active Expired - Fee Related
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101984153B (en) * | 2009-12-24 | 2013-03-20 | 新疆天科合达蓝光半导体有限公司 | Annealing process for reducing stress of silicon carbide crystals |
| CN102534805A (en) * | 2010-12-14 | 2012-07-04 | 北京天科合达蓝光半导体有限公司 | Silicon carbide crystal annealing process |
| CN102747425A (en) * | 2012-07-02 | 2012-10-24 | 东莞市天域半导体科技有限公司 | Horizontal type silicon carbide high-temperature oxidation device |
| CN102735714A (en) * | 2012-07-16 | 2012-10-17 | 烟台大学 | Particle organic carbon and total organic carbon determinator and determination method |
| CN103014873B (en) * | 2012-09-18 | 2017-07-14 | 苏州四海常晶光电材料有限公司 | A kind of pure oxygen atmosphere annealing device and method for annealing |
| CN103014873A (en) * | 2012-09-18 | 2013-04-03 | 苏州四海常晶光电材料有限公司 | Pure-oxygen-atmosphere annealing device and method |
| CN103397170A (en) * | 2013-08-22 | 2013-11-20 | 西北有色金属研究院 | Atmosphere protective high-frequency induction heating and continuous annealing method and device for tube stocks and wire rods |
| CN104185321A (en) * | 2014-08-15 | 2014-12-03 | 哈尔滨宏万智科技开发有限公司 | Heating device of pressure container |
| CN109304227A (en) * | 2018-08-24 | 2019-02-05 | 中国科学院合肥物质科学研究院 | A kind of infrared tubular heater sample cell that new application is tested in thermal desorption |
| CN111621853A (en) * | 2020-05-29 | 2020-09-04 | 武汉大学 | Pulse microwave and radio frequency electromagnetic induction two-stage crystal growth annealing device |
| CN112516916A (en) * | 2020-12-11 | 2021-03-19 | 河北同光晶体有限公司 | Ultrahigh vacuum silicon carbide raw material synthesis furnace system |
| WO2022160547A1 (en) * | 2021-02-01 | 2022-08-04 | 中国电子科技集团公司第四十八研究所 | Reaction chamber of silicon carbide epitaxial furnace |
| RU2824074C1 (en) * | 2021-02-01 | 2024-08-01 | Зе 48 Резерч Институт Оф Чайна Электроникс Текнолоджи Груп Корпорейшн | Silicon carbide epitaxial reactor combustion chamber |
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