SG135203A1 - Method for etching high dielectric constant materials and for cleaning deposition chambers for high dielectric constant materials - Google Patents

Method for etching high dielectric constant materials and for cleaning deposition chambers for high dielectric constant materials

Info

Publication number
SG135203A1
SG135203A1 SG200706288-8A SG2007062888A SG135203A1 SG 135203 A1 SG135203 A1 SG 135203A1 SG 2007062888 A SG2007062888 A SG 2007062888A SG 135203 A1 SG135203 A1 SG 135203A1
Authority
SG
Singapore
Prior art keywords
dielectric constant
high dielectric
constant materials
containing compound
substance
Prior art date
Application number
SG200706288-8A
Other languages
English (en)
Inventor
Bing Ji
Stephen Andrew Motika
Ronald Martin Pearlstein
Joseph Karwacki Eugene Jr
Dingjun Wu
Original Assignee
Air Prod & Chem
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Air Prod & Chem filed Critical Air Prod & Chem
Publication of SG135203A1 publication Critical patent/SG135203A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Optics & Photonics (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
SG200706288-8A 2003-11-26 2004-11-24 Method for etching high dielectric constant materials and for cleaning deposition chambers for high dielectric constant materials SG135203A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/723,714 US7357138B2 (en) 2002-07-18 2003-11-26 Method for etching high dielectric constant materials and for cleaning deposition chambers for high dielectric constant materials

Publications (1)

Publication Number Publication Date
SG135203A1 true SG135203A1 (en) 2007-09-28

Family

ID=34465714

Family Applications (2)

Application Number Title Priority Date Filing Date
SG200706288-8A SG135203A1 (en) 2003-11-26 2004-11-24 Method for etching high dielectric constant materials and for cleaning deposition chambers for high dielectric constant materials
SG200407219A SG112101A1 (en) 2003-11-26 2004-11-24 Method for etching high dielectric constant materials and for cleaning deposition chambers for high dielectric constant materials

Family Applications After (1)

Application Number Title Priority Date Filing Date
SG200407219A SG112101A1 (en) 2003-11-26 2004-11-24 Method for etching high dielectric constant materials and for cleaning deposition chambers for high dielectric constant materials

Country Status (7)

Country Link
US (1) US7357138B2 (zh)
EP (1) EP1538235A1 (zh)
JP (1) JP2005175466A (zh)
KR (1) KR100667723B1 (zh)
CN (1) CN100372055C (zh)
SG (2) SG135203A1 (zh)
TW (1) TWI267898B (zh)

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CN100372055C (zh) 2008-02-27
CN1638028A (zh) 2005-07-13
EP1538235A1 (en) 2005-06-08
KR100667723B1 (ko) 2007-01-15
TW200518178A (en) 2005-06-01
TWI267898B (en) 2006-12-01
US7357138B2 (en) 2008-04-15
US20040129671A1 (en) 2004-07-08
SG112101A1 (en) 2005-06-29
KR20050050579A (ko) 2005-05-31

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