SG11202011373SA - Reflective mask blank, reflective mask, method of manufacturing reflective mask, and method of manufacturing semiconductor device - Google Patents

Reflective mask blank, reflective mask, method of manufacturing reflective mask, and method of manufacturing semiconductor device

Info

Publication number
SG11202011373SA
SG11202011373SA SG11202011373SA SG11202011373SA SG11202011373SA SG 11202011373S A SG11202011373S A SG 11202011373SA SG 11202011373S A SG11202011373S A SG 11202011373SA SG 11202011373S A SG11202011373S A SG 11202011373SA SG 11202011373S A SG11202011373S A SG 11202011373SA
Authority
SG
Singapore
Prior art keywords
reflective mask
manufacturing
semiconductor device
blank
manufacturing semiconductor
Prior art date
Application number
SG11202011373SA
Other languages
English (en)
Inventor
Yohei IKEBE
Tsutomu Shoki
Original Assignee
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Publication of SG11202011373SA publication Critical patent/SG11202011373SA/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
SG11202011373SA 2018-05-25 2019-05-24 Reflective mask blank, reflective mask, method of manufacturing reflective mask, and method of manufacturing semiconductor device SG11202011373SA (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2018100363 2018-05-25
JP2018165248 2018-09-04
PCT/JP2019/020635 WO2019225737A1 (ja) 2018-05-25 2019-05-24 反射型マスクブランク、反射型マスク、並びに反射型マスク及び半導体装置の製造方法

Publications (1)

Publication Number Publication Date
SG11202011373SA true SG11202011373SA (en) 2020-12-30

Family

ID=68616158

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202011373SA SG11202011373SA (en) 2018-05-25 2019-05-24 Reflective mask blank, reflective mask, method of manufacturing reflective mask, and method of manufacturing semiconductor device

Country Status (6)

Country Link
US (4) US11550215B2 (https=)
JP (2) JPWO2019225737A1 (https=)
KR (2) KR102906466B1 (https=)
SG (1) SG11202011373SA (https=)
TW (3) TW202511858A (https=)
WO (1) WO2019225737A1 (https=)

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Also Published As

Publication number Publication date
JPWO2019225737A1 (ja) 2021-06-10
US20240036458A1 (en) 2024-02-01
TW202004326A (zh) 2020-01-16
KR102906466B1 (ko) 2026-01-02
JP2024153940A (ja) 2024-10-29
US20240393675A1 (en) 2024-11-28
US11815807B2 (en) 2023-11-14
US12105413B2 (en) 2024-10-01
US20230087016A1 (en) 2023-03-23
US11550215B2 (en) 2023-01-10
WO2019225737A1 (ja) 2019-11-28
US20210223681A1 (en) 2021-07-22
TW202349105A (zh) 2023-12-16
KR20210013008A (ko) 2021-02-03
TWI811369B (zh) 2023-08-11
TWI867651B (zh) 2024-12-21
KR20260003439A (ko) 2026-01-06
TW202511858A (zh) 2025-03-16

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