SG11201911415VA - Substrate with multilayer reflective film, reflective mask blank, reflective mask, and method of manufacturing semiconductor device - Google Patents
Substrate with multilayer reflective film, reflective mask blank, reflective mask, and method of manufacturing semiconductor deviceInfo
- Publication number
- SG11201911415VA SG11201911415VA SG11201911415VA SG11201911415VA SG11201911415VA SG 11201911415V A SG11201911415V A SG 11201911415VA SG 11201911415V A SG11201911415V A SG 11201911415VA SG 11201911415V A SG11201911415V A SG 11201911415VA SG 11201911415V A SG11201911415V A SG 11201911415VA
- Authority
- SG
- Singapore
- Prior art keywords
- reflective mask
- reflective
- substrate
- semiconductor device
- manufacturing semiconductor
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/52—Reflectors
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/08—Mirrors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
- G03F1/24—Reflection masks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
- G03F1/58—Absorbers, e.g. of opaque materials having two or more different absorber layers, e.g. stacked multilayer absorbers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0332—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their composition, e.g. multilayer masks, materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Optics & Photonics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Physical Vapour Deposition (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017121485 | 2017-06-21 | ||
PCT/JP2018/022756 WO2018235721A1 (en) | 2017-06-21 | 2018-06-14 | Substrate with multilayer reflective film, reflective mask blank, reflective mask, and method for producing semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201911415VA true SG11201911415VA (en) | 2020-01-30 |
Family
ID=64735657
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201911415VA SG11201911415VA (en) | 2017-06-21 | 2018-06-14 | Substrate with multilayer reflective film, reflective mask blank, reflective mask, and method of manufacturing semiconductor device |
SG10202112738PA SG10202112738PA (en) | 2017-06-21 | 2018-06-14 | Substrate with multilayer reflective film, reflective mask blank, reflective mask, and method of manufacturing semiconductor device |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10202112738PA SG10202112738PA (en) | 2017-06-21 | 2018-06-14 | Substrate with multilayer reflective film, reflective mask blank, reflective mask, and method of manufacturing semiconductor device |
Country Status (6)
Country | Link |
---|---|
US (1) | US11454878B2 (en) |
JP (2) | JP7118962B2 (en) |
KR (2) | KR102653352B1 (en) |
SG (2) | SG11201911415VA (en) |
TW (1) | TWI784012B (en) |
WO (1) | WO2018235721A1 (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7484826B2 (en) | 2021-06-18 | 2024-05-16 | 信越化学工業株式会社 | Reflective mask blank and method for manufacturing a reflective mask |
US20230032950A1 (en) * | 2021-07-30 | 2023-02-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Euv photo masks and manufacturing method thereof |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6110607A (en) | 1998-02-20 | 2000-08-29 | The Regents Of The University Of California | High reflectance-low stress Mo-Si multilayer reflective coatings |
JP2004331998A (en) | 2003-04-30 | 2004-11-25 | Nikon Corp | Method of depositing multilayer film, reflecting mirror, and exposure device |
EP1675164B2 (en) | 2003-10-15 | 2019-07-03 | Nikon Corporation | Multilayer film reflection mirror, production method for multilayer film reflection mirror, and exposure system |
JP2005250187A (en) * | 2004-03-05 | 2005-09-15 | Nikon Corp | Multilayer film mirror and euv aligner |
KR100699858B1 (en) | 2005-08-03 | 2007-03-27 | 삼성전자주식회사 | Reflection device for EUVL lithography, fabricating method of the same and, mask, projection optics system and apparatus of EUVL using the same |
US7504185B2 (en) | 2005-10-03 | 2009-03-17 | Asahi Glass Company, Limited | Method for depositing multi-layer film of mask blank for EUV lithography and method for producing mask blank for EUV lithography |
JP5233321B2 (en) * | 2008-02-27 | 2013-07-10 | 凸版印刷株式会社 | Extreme ultraviolet exposure mask blank, extreme ultraviolet exposure mask, extreme ultraviolet exposure mask manufacturing method, and pattern transfer method using extreme ultraviolet exposure mask |
JP5616265B2 (en) * | 2011-03-25 | 2014-10-29 | Hoya株式会社 | Thin film deposition method, mask blank manufacturing method, and transfer mask manufacturing method |
JP6460617B2 (en) | 2012-02-10 | 2019-01-30 | Hoya株式会社 | Reflective mask blank, reflective mask manufacturing method, and reflective mask blank manufacturing method |
US9274411B2 (en) * | 2012-06-05 | 2016-03-01 | SK Hynix Inc. | Reflection type blank masks, methods of fabricating the same, and methods of fabricating reflection type photo masks using the same |
JP2014229825A (en) * | 2013-05-24 | 2014-12-08 | 旭硝子株式会社 | Method of manufacturing reflective mask blank for euv lithography, and method of manufacturing substrate with reflective layer for mask blank |
KR102239726B1 (en) | 2013-09-11 | 2021-04-12 | 호야 가부시키가이샤 | Substrate with multilayer reflective film, reflective mask blank for euv lithography, reflective mask for euv lithography, method for producing reflective mask for euv lithography, and method for manufacturing semiconductor device |
KR102294187B1 (en) | 2013-09-27 | 2021-08-26 | 호야 가부시키가이샤 | Substrate for mask blank, substrate with multilayer reflective film, reflective type mask blank, reflective type mask and manufacturing method of semiconductor device |
KR102499220B1 (en) | 2014-09-17 | 2023-02-13 | 호야 가부시키가이샤 | Reflective mask blank, method for manufacturing same, reflective mask, method for manufacturing same, and method for manufacturing semiconductor device |
JP2017116931A (en) | 2015-12-17 | 2017-06-29 | Hoya株式会社 | Methods for manufacturing substrate with multilayer reflection film, reflective mask blank, reflective mask, and semiconductor device |
WO2018037864A1 (en) | 2016-08-26 | 2018-03-01 | Hoya株式会社 | Mask blank, phase shift mask, method for manufacturing phase shift mask, and method for manufacturing semiconductor device |
-
2018
- 2018-06-14 WO PCT/JP2018/022756 patent/WO2018235721A1/en active Application Filing
- 2018-06-14 JP JP2019525523A patent/JP7118962B2/en active Active
- 2018-06-14 SG SG11201911415VA patent/SG11201911415VA/en unknown
- 2018-06-14 SG SG10202112738PA patent/SG10202112738PA/en unknown
- 2018-06-14 KR KR1020197035605A patent/KR102653352B1/en active IP Right Grant
- 2018-06-14 US US16/625,569 patent/US11454878B2/en active Active
- 2018-06-14 KR KR1020247010347A patent/KR20240046292A/en active Search and Examination
- 2018-06-21 TW TW107121261A patent/TWI784012B/en active
-
2022
- 2022-08-03 JP JP2022123750A patent/JP7368564B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US20210247688A1 (en) | 2021-08-12 |
TW201905580A (en) | 2019-02-01 |
KR20240046292A (en) | 2024-04-08 |
WO2018235721A1 (en) | 2018-12-27 |
TWI784012B (en) | 2022-11-21 |
US11454878B2 (en) | 2022-09-27 |
TW202309649A (en) | 2023-03-01 |
KR102653352B1 (en) | 2024-04-02 |
JPWO2018235721A1 (en) | 2020-04-23 |
KR20200018428A (en) | 2020-02-19 |
JP7368564B2 (en) | 2023-10-24 |
SG10202112738PA (en) | 2021-12-30 |
JP2022159362A (en) | 2022-10-17 |
JP7118962B2 (en) | 2022-08-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
SG11201807251SA (en) | Reflective mask blank, reflective mask and method of manufacturing semiconductor device | |
SG11202011373SA (en) | Reflective mask blank, reflective mask, method of manufacturing reflective mask, and method of manufacturing semiconductor device | |
SG10201911400WA (en) | Substrate with electrically conductive film, substrate with multilayer reflective film, reflective mask blank, reflective mask, and method of manufacturing semiconductor device | |
SG11201509897WA (en) | Conductive film coated substrate, multilayer reflectivefilm coated substrate, reflective mask blank, reflectivemask, and semiconductor device manufacturing method | |
SG11202011370VA (en) | Reflective mask blank, reflective mask and manufacturing method thereof, and semiconductor device manufacturing method | |
SG11202106508PA (en) | Reflective mask blank, reflective mask, and method for manufacturing semiconductor device | |
SG11201505056WA (en) | Substrate for mask blank, substrate with multilayer reflective film, reflective mask blank, reflective mask, method of manufacturing for substrate for mask blank, method of manufacturing for substrate with multilayer reflective film, and method of manufacturing semiconductor device | |
EP3106920A4 (en) | Active light sensitive or radiation sensitive resin composition, active light sensitive or radiation sensitive film, mask blank provided with active light sensitive or radiation sensitive film, photomask, pattern forming method, method for manufacturing electronic device, and electronic device | |
SG11202002853TA (en) | Substrate with a multilayer reflective film, reflective mask blank, reflective mask and method of manufacturing semiconductor device | |
SG10201910166WA (en) | Manufacturing method of semiconductor device with metal film | |
SG10202009397WA (en) | Multilayered-reflective-film-provided substrate, reflective mask blank, reflective mask, method of manufacturing reflective mask, and method of manufacturing semiconductor device | |
SG11202005918UA (en) | Substrate with conductive film, substrate with multilayer reflective film, reflective mask blank, reflective mask, and semiconductor device manufacturing method | |
SG10202007863UA (en) | Mask blank, transfer mask, and method of manufacturing semiconductor device | |
SG10202002515QA (en) | Substrate with a multilayer reflective film, reflective mask blank, reflective mask, and semiconductor device manufacturing method | |
EP3351605A4 (en) | First protective film forming sheet, method for forming first protective film, and method for manufacturing semiconductor chip | |
SG11202004856XA (en) | Reflective mask blank, reflective mask and method of manufacturing the same, and method of manufacturing semiconductor device | |
SG11202109240PA (en) | Reflective mask blank, reflective mask and method of manufacturing the same, and method of manufacturing semiconductor device | |
SG11202002928WA (en) | Mask blank, phase shift mask, and method of manufacturing semiconductor device | |
SG11202107980SA (en) | Reflective mask blank, reflective mask and method of manufacturing the same, and method of manufacturing semiconductor device | |
SG11202101338UA (en) | Reflective mask blank, reflective mask and method of manufacturing the same, and method of manufacturing semiconductor device | |
EP3418424A4 (en) | Compound semiconductor substrate, pellicle film, and method for manufacturing compound semiconductor substrate | |
SG10202112738PA (en) | Substrate with multilayer reflective film, reflective mask blank, reflective mask, and method of manufacturing semiconductor device | |
SG11202007053XA (en) | Manufacturing method for semiconductor device, and adhesive film | |
SG11202109244UA (en) | Mask blank substrate, substrate with conductive film, substrate with multilayer reflective film, reflective mask blank, reflective mask, and method of manufacturing semiconductor device | |
SG11202007994YA (en) | Mask blank, phase shift mask, and method of manufacturing semiconductor device |