SG11201911415VA - Substrate with multilayer reflective film, reflective mask blank, reflective mask, and method of manufacturing semiconductor device - Google Patents

Substrate with multilayer reflective film, reflective mask blank, reflective mask, and method of manufacturing semiconductor device

Info

Publication number
SG11201911415VA
SG11201911415VA SG11201911415VA SG11201911415VA SG11201911415VA SG 11201911415V A SG11201911415V A SG 11201911415VA SG 11201911415V A SG11201911415V A SG 11201911415VA SG 11201911415V A SG11201911415V A SG 11201911415VA SG 11201911415V A SG11201911415V A SG 11201911415VA
Authority
SG
Singapore
Prior art keywords
reflective mask
reflective
substrate
semiconductor device
manufacturing semiconductor
Prior art date
Application number
SG11201911415VA
Inventor
Hirofumi Kozakai
Takahiro Onoue
Original Assignee
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Publication of SG11201911415VA publication Critical patent/SG11201911415VA/en

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/52Reflectors
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14Metallic material, boron or silicon
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00Optical elements other than lenses
    • G02B5/08Mirrors
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24Reflection masks; Preparation thereof
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54Absorbers, e.g. of opaque materials
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54Absorbers, e.g. of opaque materials
    • G03F1/58Absorbers, e.g. of opaque materials having two or more different absorber layers, e.g. stacked multilayer absorbers
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0332Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their composition, e.g. multilayer masks, materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Physical Vapour Deposition (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
SG11201911415VA 2017-06-21 2018-06-14 Substrate with multilayer reflective film, reflective mask blank, reflective mask, and method of manufacturing semiconductor device SG11201911415VA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017121485 2017-06-21
PCT/JP2018/022756 WO2018235721A1 (en) 2017-06-21 2018-06-14 Substrate with multilayer reflective film, reflective mask blank, reflective mask, and method for producing semiconductor device

Publications (1)

Publication Number Publication Date
SG11201911415VA true SG11201911415VA (en) 2020-01-30

Family

ID=64735657

Family Applications (2)

Application Number Title Priority Date Filing Date
SG11201911415VA SG11201911415VA (en) 2017-06-21 2018-06-14 Substrate with multilayer reflective film, reflective mask blank, reflective mask, and method of manufacturing semiconductor device
SG10202112738PA SG10202112738PA (en) 2017-06-21 2018-06-14 Substrate with multilayer reflective film, reflective mask blank, reflective mask, and method of manufacturing semiconductor device

Family Applications After (1)

Application Number Title Priority Date Filing Date
SG10202112738PA SG10202112738PA (en) 2017-06-21 2018-06-14 Substrate with multilayer reflective film, reflective mask blank, reflective mask, and method of manufacturing semiconductor device

Country Status (6)

Country Link
US (1) US11454878B2 (en)
JP (2) JP7118962B2 (en)
KR (2) KR102653352B1 (en)
SG (2) SG11201911415VA (en)
TW (1) TWI784012B (en)
WO (1) WO2018235721A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7484826B2 (en) 2021-06-18 2024-05-16 信越化学工業株式会社 Reflective mask blank and method for manufacturing a reflective mask
US20230032950A1 (en) * 2021-07-30 2023-02-02 Taiwan Semiconductor Manufacturing Company, Ltd. Euv photo masks and manufacturing method thereof

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6110607A (en) 1998-02-20 2000-08-29 The Regents Of The University Of California High reflectance-low stress Mo-Si multilayer reflective coatings
JP2004331998A (en) 2003-04-30 2004-11-25 Nikon Corp Method of depositing multilayer film, reflecting mirror, and exposure device
EP1675164B2 (en) 2003-10-15 2019-07-03 Nikon Corporation Multilayer film reflection mirror, production method for multilayer film reflection mirror, and exposure system
JP2005250187A (en) * 2004-03-05 2005-09-15 Nikon Corp Multilayer film mirror and euv aligner
KR100699858B1 (en) 2005-08-03 2007-03-27 삼성전자주식회사 Reflection device for EUVL lithography, fabricating method of the same and, mask, projection optics system and apparatus of EUVL using the same
US7504185B2 (en) 2005-10-03 2009-03-17 Asahi Glass Company, Limited Method for depositing multi-layer film of mask blank for EUV lithography and method for producing mask blank for EUV lithography
JP5233321B2 (en) * 2008-02-27 2013-07-10 凸版印刷株式会社 Extreme ultraviolet exposure mask blank, extreme ultraviolet exposure mask, extreme ultraviolet exposure mask manufacturing method, and pattern transfer method using extreme ultraviolet exposure mask
JP5616265B2 (en) * 2011-03-25 2014-10-29 Hoya株式会社 Thin film deposition method, mask blank manufacturing method, and transfer mask manufacturing method
JP6460617B2 (en) 2012-02-10 2019-01-30 Hoya株式会社 Reflective mask blank, reflective mask manufacturing method, and reflective mask blank manufacturing method
US9274411B2 (en) * 2012-06-05 2016-03-01 SK Hynix Inc. Reflection type blank masks, methods of fabricating the same, and methods of fabricating reflection type photo masks using the same
JP2014229825A (en) * 2013-05-24 2014-12-08 旭硝子株式会社 Method of manufacturing reflective mask blank for euv lithography, and method of manufacturing substrate with reflective layer for mask blank
KR102239726B1 (en) 2013-09-11 2021-04-12 호야 가부시키가이샤 Substrate with multilayer reflective film, reflective mask blank for euv lithography, reflective mask for euv lithography, method for producing reflective mask for euv lithography, and method for manufacturing semiconductor device
KR102294187B1 (en) 2013-09-27 2021-08-26 호야 가부시키가이샤 Substrate for mask blank, substrate with multilayer reflective film, reflective type mask blank, reflective type mask and manufacturing method of semiconductor device
KR102499220B1 (en) 2014-09-17 2023-02-13 호야 가부시키가이샤 Reflective mask blank, method for manufacturing same, reflective mask, method for manufacturing same, and method for manufacturing semiconductor device
JP2017116931A (en) 2015-12-17 2017-06-29 Hoya株式会社 Methods for manufacturing substrate with multilayer reflection film, reflective mask blank, reflective mask, and semiconductor device
WO2018037864A1 (en) 2016-08-26 2018-03-01 Hoya株式会社 Mask blank, phase shift mask, method for manufacturing phase shift mask, and method for manufacturing semiconductor device

Also Published As

Publication number Publication date
US20210247688A1 (en) 2021-08-12
TW201905580A (en) 2019-02-01
KR20240046292A (en) 2024-04-08
WO2018235721A1 (en) 2018-12-27
TWI784012B (en) 2022-11-21
US11454878B2 (en) 2022-09-27
TW202309649A (en) 2023-03-01
KR102653352B1 (en) 2024-04-02
JPWO2018235721A1 (en) 2020-04-23
KR20200018428A (en) 2020-02-19
JP7368564B2 (en) 2023-10-24
SG10202112738PA (en) 2021-12-30
JP2022159362A (en) 2022-10-17
JP7118962B2 (en) 2022-08-16

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