SG11201710317RA - Substrate with electrically conductive film, substrate with multilayer reflective film, reflective mask blank, reflective mask, and method of manufacturing semiconductor device - Google Patents
Substrate with electrically conductive film, substrate with multilayer reflective film, reflective mask blank, reflective mask, and method of manufacturing semiconductor deviceInfo
- Publication number
- SG11201710317RA SG11201710317RA SG11201710317RA SG11201710317RA SG11201710317RA SG 11201710317R A SG11201710317R A SG 11201710317RA SG 11201710317R A SG11201710317R A SG 11201710317RA SG 11201710317R A SG11201710317R A SG 11201710317RA SG 11201710317R A SG11201710317R A SG 11201710317RA
- Authority
- SG
- Singapore
- Prior art keywords
- substrate
- reflective mask
- reflective
- film
- semiconductor device
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/40—Electrostatic discharge [ESD] related features, e.g. antistatic coatings or a conductive metal layer around the periphery of the mask substrate
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
- G03F1/24—Reflection masks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015121712 | 2015-06-17 | ||
| PCT/JP2016/067134 WO2016204051A1 (en) | 2015-06-17 | 2016-06-08 | Substrate provided with electroconductive film, substrate provided with multi-layer reflective film, reflective mask blank, reflective mask, and method for manufacturing semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11201710317RA true SG11201710317RA (en) | 2018-01-30 |
Family
ID=57545764
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG10201911400WA SG10201911400WA (en) | 2015-06-17 | 2016-06-08 | Substrate with electrically conductive film, substrate with multilayer reflective film, reflective mask blank, reflective mask, and method of manufacturing semiconductor device |
| SG11201710317RA SG11201710317RA (en) | 2015-06-17 | 2016-06-08 | Substrate with electrically conductive film, substrate with multilayer reflective film, reflective mask blank, reflective mask, and method of manufacturing semiconductor device |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG10201911400WA SG10201911400WA (en) | 2015-06-17 | 2016-06-08 | Substrate with electrically conductive film, substrate with multilayer reflective film, reflective mask blank, reflective mask, and method of manufacturing semiconductor device |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US10606166B2 (en) |
| JP (3) | JP6815995B2 (en) |
| KR (2) | KR20240046293A (en) |
| SG (2) | SG10201911400WA (en) |
| TW (2) | TWI755085B (en) |
| WO (1) | WO2016204051A1 (en) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20240046293A (en) | 2015-06-17 | 2024-04-08 | 호야 가부시키가이샤 | Substrate provided with electroconductive film, substrate provided with multi-layer reflective film, reflective mask blank, reflective mask, and method for manufacturing semiconductor device |
| SG11201807712YA (en) * | 2016-03-31 | 2018-10-30 | Hoya Corp | Method for manufacturing reflective mask blank, reflective mask blank, method for manufacturing reflective mask, reflective mask, and method for manufacturing semiconductor device |
| WO2018135467A1 (en) * | 2017-01-17 | 2018-07-26 | Hoya株式会社 | Reflective mask blank, reflective mask, method for producing same, and method for producing semiconductor device |
| JP6863169B2 (en) * | 2017-08-15 | 2021-04-21 | Ａｇｃ株式会社 | Reflective mask blank, and reflective mask |
| US10553428B2 (en) * | 2017-08-22 | 2020-02-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Reflection mode photomask and fabrication method therefore |
| TWI811369B (en) * | 2018-05-25 | 2023-08-11 | 日商Ｈｏｙａ股份有限公司 | Reflective photomask base, reflective photomask, method for manufacturing reflective photomask and semiconductor device |
| US10768534B2 (en) | 2018-08-14 | 2020-09-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | Photolithography apparatus and method and method for handling wafer |
| JP6855645B1 (en) * | 2019-06-27 | 2021-04-07 | Hoya株式会社 | Manufacturing method of thin film substrate, multilayer reflective coating substrate, reflective mask blank, reflective mask and semiconductor device |
| JP7354005B2 (en) * | 2020-02-12 | 2023-10-02 | Hoya株式会社 | Reflective mask blank, reflective mask, and semiconductor device manufacturing method |
| US11111176B1 (en) * | 2020-02-27 | 2021-09-07 | Applied Materials, Inc. | Methods and apparatus of processing transparent substrates |
| KR102567180B1 (en) * | 2020-04-21 | 2023-08-16 | 에이지씨 가부시키가이샤 | Reflective mask blank for euv lithography |
| US20210333717A1 (en) * | 2020-04-23 | 2021-10-28 | Taiwan Semiconductor Manufacturing Co., Ltd. | Extreme ultraviolet mask and method of manufacturing the same |
| KR102464780B1 (en) * | 2020-09-02 | 2022-11-09 | 주식회사 에스앤에스텍 | Blankmask with Backside Conductive Layer, and Photomask manufactured with the same |
| JP2022129534A (en) * | 2021-02-25 | 2022-09-06 | Hoya株式会社 | Mask blank, reflection type mask, and method for manufacturing semiconductor device |
| JP7567742B2 (en) * | 2021-10-01 | 2024-10-16 | 信越化学工業株式会社 | Substrate with film for reflective mask blank, reflective mask blank, and method for manufacturing reflective mask |
| JP2024034663A (en) * | 2022-09-01 | 2024-03-13 | 信越化学工業株式会社 | Reflection type mask blank and production method of reflection type mask |
| WO2024071026A1 (en) * | 2022-09-28 | 2024-04-04 | Hoya株式会社 | Substrate with conductive film, reflective mask blank, reflective mask, and semiconductor device production method |
Family Cites Families (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS526730Y2 (en) | 1972-10-30 | 1977-02-12 | ||
| JPS5228892Y2 (en) | 1972-12-04 | 1977-07-01 | ||
| JPS5082857U (en) | 1973-11-30 | 1975-07-16 | ||
| JPS5596951A (en) * | 1979-01-17 | 1980-07-23 | Mitsubishi Electric Corp | Negative for photomask |
| JP2001358055A (en) * | 2000-06-15 | 2001-12-26 | Nikon Corp | Exposure apparatus and method for manufacturing device |
| US20050238922A1 (en) | 2003-12-25 | 2005-10-27 | Hoya Corporation | Substrate with a multilayer reflection film, reflection type mask blank for exposure, reflection type mask for exposure and methods of manufacturing them |
| JP2005210093A (en) * | 2003-12-25 | 2005-08-04 | Hoya Corp | Substrate with muti-layer reflective film, exposure reflection type mask blank, exposure reflection type mask, and manufacturing methods for these |
| WO2007069417A1 (en) | 2005-12-12 | 2007-06-21 | Asahi Glass Company, Limited | Reflection-type mask blank for euv lithography, and substrate with electrically conductive film for the mask blank |
| US7678511B2 (en) * | 2006-01-12 | 2010-03-16 | Asahi Glass Company, Limited | Reflective-type mask blank for EUV lithography |
| WO2008072706A1 (en) * | 2006-12-15 | 2008-06-19 | Asahi Glass Company, Limited | Reflective mask blank for euv lithography, and substrate with function film for the mask blank |
| JP4372178B2 (en) * | 2007-04-27 | 2009-11-25 | 株式会社東芝 | Light reflecting mask, light reflecting mask manufacturing method, and semiconductor device manufacturing method |
| JP5348127B2 (en) | 2008-03-18 | 2013-11-20 | 旭硝子株式会社 | Reflective mask blank for EUV lithography |
| JP4994405B2 (en) | 2009-03-05 | 2012-08-08 | Ｈｏｙａ株式会社 | Method for determining quality of release film of press mold and method for manufacturing optical element |
| JP5515773B2 (en) * | 2010-01-21 | 2014-06-11 | 大日本印刷株式会社 | Reflective mask having light-shielding frame and method for manufacturing the same |
| TWI399456B (en) * | 2010-01-25 | 2013-06-21 | Sun Well Solar Corp | Apparatus for conductive film coating and method for processing substrates therein |
| US9439291B2 (en) * | 2010-12-16 | 2016-09-06 | Hitachi Chemical Company, Ltd. | Photosensitive element, method for forming resist pattern, and method for producing printed circuit board |
| KR20130013515A (en) * | 2011-07-28 | 2013-02-06 | 삼성디스플레이 주식회사 | Organic light emitting display apparatus |
| EP2581789B1 (en) | 2011-10-14 | 2020-04-29 | Fundació Institut de Ciències Fotòniques | Optically transparent and electrically conductive coatings and method for their deposition on a substrate |
| JP6157874B2 (en) * | 2012-03-19 | 2017-07-05 | Hoya株式会社 | EUV Lithographic Substrate with Multilayer Reflective Film, EUV Lithographic Reflective Mask Blank, EUV Lithographic Reflective Mask, and Semiconductor Device Manufacturing Method |
| JP5575169B2 (en) * | 2012-03-22 | 2014-08-20 | 株式会社ニューフレアテクノロジー | Charged particle beam drawing apparatus and charged particle beam drawing method |
| JP5993779B2 (en) * | 2013-03-29 | 2016-09-14 | 富士フイルム株式会社 | Conductive film forming composition, conductive film, wiring board |
| KR102109129B1 (en) * | 2013-07-02 | 2020-05-08 | 삼성전자주식회사 | Reflective photomask blank and reflective photomask |
| JP6186996B2 (en) * | 2013-07-30 | 2017-08-30 | 旭硝子株式会社 | Reflective mask blank for EUV lithography and reflective mask for EUV lithography |
| KR102127907B1 (en) * | 2013-09-27 | 2020-06-29 | 호야 가부시키가이샤 | Substrate provided with conductive film, substrate provided with multi-layer reflection film, reflective mask blank, reflective mask, and semiconductor device manufacturing method |
| JP2015126127A (en) * | 2013-12-26 | 2015-07-06 | キヤノン株式会社 | Holding device, exposure device, and manufacturing method for article |
| JP6257428B2 (en) * | 2014-04-15 | 2018-01-10 | 株式会社ジャパンディスプレイ | Electrode substrate, display device, input device, and electrode substrate manufacturing method |
| KR20240046293A (en) | 2015-06-17 | 2024-04-08 | 호야 가부시키가이샤 | Substrate provided with electroconductive film, substrate provided with multi-layer reflective film, reflective mask blank, reflective mask, and method for manufacturing semiconductor device |
-
2016
- 2016-06-08 KR KR1020247010348A patent/KR20240046293A/en not_active Application Discontinuation
- 2016-06-08 KR KR1020177035098A patent/KR102653351B1/en active IP Right Grant
- 2016-06-08 SG SG10201911400WA patent/SG10201911400WA/en unknown
- 2016-06-08 SG SG11201710317RA patent/SG11201710317RA/en unknown
- 2016-06-08 JP JP2017525171A patent/JP6815995B2/en active Active
- 2016-06-08 WO PCT/JP2016/067134 patent/WO2016204051A1/en active Application Filing
- 2016-06-08 US US15/580,331 patent/US10606166B2/en active Active
- 2016-06-16 TW TW109134273A patent/TWI755085B/en active
- 2016-06-16 TW TW105118976A patent/TWI708993B/en active
-
2020
- 2020-02-20 US US16/796,395 patent/US10996554B2/en active Active
- 2020-10-30 JP JP2020182324A patent/JP7296358B2/en active Active
-
2022
- 2022-03-18 JP JP2022043344A patent/JP7296499B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| US10606166B2 (en) | 2020-03-31 |
| KR102653351B1 (en) | 2024-04-02 |
| US20180149962A1 (en) | 2018-05-31 |
| US20200192213A1 (en) | 2020-06-18 |
| TW202109173A (en) | 2021-03-01 |
| JP7296358B2 (en) | 2023-06-22 |
| KR20240046293A (en) | 2024-04-08 |
| TWI755085B (en) | 2022-02-11 |
| JP7296499B2 (en) | 2023-06-22 |
| JPWO2016204051A1 (en) | 2018-04-05 |
| WO2016204051A1 (en) | 2016-12-22 |
| JP2022069683A (en) | 2022-05-11 |
| TWI708993B (en) | 2020-11-01 |
| JP6815995B2 (en) | 2021-01-20 |
| SG10201911400WA (en) | 2020-02-27 |
| US10996554B2 (en) | 2021-05-04 |
| KR20180018526A (en) | 2018-02-21 |
| JP2021015295A (en) | 2021-02-12 |
| TW201706709A (en) | 2017-02-16 |
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