SG11202002853TA - Substrate with a multilayer reflective film, reflective mask blank, reflective mask and method of manufacturing semiconductor device - Google Patents

Substrate with a multilayer reflective film, reflective mask blank, reflective mask and method of manufacturing semiconductor device

Info

Publication number
SG11202002853TA
SG11202002853TA SG11202002853TA SG11202002853TA SG11202002853TA SG 11202002853T A SG11202002853T A SG 11202002853TA SG 11202002853T A SG11202002853T A SG 11202002853TA SG 11202002853T A SG11202002853T A SG 11202002853TA SG 11202002853T A SG11202002853T A SG 11202002853TA
Authority
SG
Singapore
Prior art keywords
reflective mask
reflective
substrate
semiconductor device
manufacturing semiconductor
Prior art date
Application number
SG11202002853TA
Inventor
Kazuhiro Hamamoto
Tsutomu Shoki
Original Assignee
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Publication of SG11202002853TA publication Critical patent/SG11202002853TA/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/42—Alignment or registration features, e.g. alignment marks on the mask substrates
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/52—Reflectors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/7076—Mark details, e.g. phase grating mark, temporary mark
SG11202002853TA 2017-10-17 2018-10-16 Substrate with a multilayer reflective film, reflective mask blank, reflective mask and method of manufacturing semiconductor device SG11202002853TA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017201189 2017-10-17
PCT/JP2018/038501 WO2019078206A1 (en) 2017-10-17 2018-10-16 Substrate with multilayer reflective film, reflective mask blank, reflective mask, and semiconductor device manufacturing method

Publications (1)

Publication Number Publication Date
SG11202002853TA true SG11202002853TA (en) 2020-05-28

Family

ID=66174168

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202002853TA SG11202002853TA (en) 2017-10-17 2018-10-16 Substrate with a multilayer reflective film, reflective mask blank, reflective mask and method of manufacturing semiconductor device

Country Status (6)

Country Link
US (3) US11262647B2 (en)
JP (2) JP7286544B2 (en)
KR (1) KR20200064065A (en)
SG (1) SG11202002853TA (en)
TW (1) TW201928503A (en)
WO (1) WO2019078206A1 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2019225737A1 (en) 2018-05-25 2021-06-10 Hoya株式会社 Reflective Mask Blanks, Reflective Masks, and Methods for Manufacturing Reflective Masks and Semiconductor Devices
WO2020235612A1 (en) * 2019-05-21 2020-11-26 Ａｇｃ株式会社 Reflective mask blank for euv lithography
CN111290224B (en) * 2020-02-20 2023-04-07 上海华力微电子有限公司 Unit mark and design method thereof
JP7318607B2 (en) * 2020-07-28 2023-08-01 Ａｇｃ株式会社 Reflective mask blank for EUV lithography, reflective mask for EUV lithography, and manufacturing method thereof

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005317617A (en) * 2004-04-27 2005-11-10 Nikon Corp Position detecting mark and reticle or sensitive substrate equipped therewith, position detecting method, mark evaluating method, mark detecting method and mark detecting device, exposing method and exposure device
JP2010219445A (en) * 2009-03-18 2010-09-30 Nuflare Technology Inc Charged particle beam drawing method, position detecting method for reference mark for charged particle beam drawing, and charged particle beam drawing device
KR101908168B1 (en) 2011-09-01 2018-10-15 에이지씨 가부시키가이샤 Reflective mask blank, method for manufacturing reflective mask blank and method for quality control for reflective mask blank
JP2013222811A (en) * 2012-04-16 2013-10-28 Lasertec Corp Euv mask blanks, mask manufacturing method, and alignment method
WO2014050891A1 (en) 2012-09-28 2014-04-03 旭硝子株式会社 Reflective mask blank for euv-lithography and manufacturing method therefor, and reflective mask for euv-lithography and manufacturing method therefor
WO2015146140A1 (en) 2014-03-24 2015-10-01 凸版印刷株式会社 Phase defect evaluation method for euv mask, method for manufacturing euv mask, euv mask blank, and euv mask
JP6713251B2 (en) * 2015-03-30 2020-06-24 Hoya株式会社 Substrate with multilayer reflective film, reflective mask blank, reflective mask, and manufacturing method thereof
JP2017075997A (en) * 2015-10-13 2017-04-20 旭硝子株式会社 Reflection type mask blank, and manufacturing method of reflection type mask blank

Also Published As

Publication number Publication date
US11681214B2 (en) 2023-06-20
US20230266658A1 (en) 2023-08-24
WO2019078206A1 (en) 2019-04-25
JP7286544B2 (en) 2023-06-05
KR20200064065A (en) 2020-06-05
WO2019078206A8 (en) 2020-02-20
US20220146925A1 (en) 2022-05-12
JPWO2019078206A1 (en) 2020-11-05
TW201928503A (en) 2019-07-16
US11262647B2 (en) 2022-03-01
US20200249558A1 (en) 2020-08-06
JP2023104997A (en) 2023-07-28

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