SG10201910166WA - Manufacturing method of semiconductor device with metal film - Google Patents

Manufacturing method of semiconductor device with metal film

Info

Publication number
SG10201910166WA
SG10201910166WA SG10201910166WA SG10201910166WA SG10201910166WA SG 10201910166W A SG10201910166W A SG 10201910166WA SG 10201910166W A SG10201910166W A SG 10201910166WA SG 10201910166W A SG10201910166W A SG 10201910166WA SG 10201910166W A SG10201910166W A SG 10201910166WA
Authority
SG
Singapore
Prior art keywords
manufacturing
semiconductor device
metal film
film
metal
Prior art date
Application number
SG10201910166WA
Inventor
Suzuki Katsuhiko
Original Assignee
Disco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Disco Corp filed Critical Disco Corp
Publication of SG10201910166WA publication Critical patent/SG10201910166WA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/362—Laser etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • H—ELECTRICITY
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3043—Making grooves, e.g. cutting
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    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
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    • H01L24/50—Tape automated bonding [TAB] connectors, i.e. film carriers; Manufacturing methods related thereto
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
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    • H01L2224/05548—Bonding area integrally formed with a redistribution layer on the semiconductor or solid-state body
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    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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    • H01L2224/1411—Disposition relative to the bonding areas, e.g. bond pads, of the semiconductor or solid-state body the bump connectors being bonded to at least one common bonding area
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    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Electromagnetism (AREA)
  • Toxicology (AREA)
  • Ceramic Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Dicing (AREA)
  • Laser Beam Processing (AREA)
SG10201910166WA 2018-11-06 2019-10-31 Manufacturing method of semiconductor device with metal film SG10201910166WA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018209003A JP7184458B2 (en) 2018-11-06 2018-11-06 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE WITH METAL FILM

Publications (1)

Publication Number Publication Date
SG10201910166WA true SG10201910166WA (en) 2020-06-29

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SG10201910166WA SG10201910166WA (en) 2018-11-06 2019-10-31 Manufacturing method of semiconductor device with metal film

Country Status (6)

Country Link
US (1) US11164783B2 (en)
JP (1) JP7184458B2 (en)
KR (1) KR20200052233A (en)
CN (1) CN111146084A (en)
DE (1) DE102019217089A1 (en)
SG (1) SG10201910166WA (en)

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JP7108492B2 (en) * 2018-08-06 2022-07-28 株式会社ディスコ Protective member forming device
KR102583127B1 (en) * 2018-10-30 2023-09-26 삼성전자주식회사 Die stack structure and semiconductor package having the die stack structure
JP7430515B2 (en) * 2019-11-06 2024-02-13 株式会社ディスコ Wafer processing method
US11612965B2 (en) * 2020-03-27 2023-03-28 Integrated Silicon Solution Inc. Method of forming package structure
JPWO2021235005A1 (en) * 2020-05-18 2021-11-25
CN111739809A (en) * 2020-06-10 2020-10-02 上海矽睿科技有限公司 Wafer level packaging method
US11889742B2 (en) * 2020-11-04 2024-01-30 Samsung Display Co., Ltd. Apparatus of manufacturing display device and method of manufacturing display device
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