SG10202002515QA - Substrate with a multilayer reflective film, reflective mask blank, reflective mask, and semiconductor device manufacturing method - Google Patents
Substrate with a multilayer reflective film, reflective mask blank, reflective mask, and semiconductor device manufacturing methodInfo
- Publication number
- SG10202002515QA SG10202002515QA SG10202002515QA SG10202002515QA SG10202002515QA SG 10202002515Q A SG10202002515Q A SG 10202002515QA SG 10202002515Q A SG10202002515Q A SG 10202002515QA SG 10202002515Q A SG10202002515Q A SG 10202002515QA SG 10202002515Q A SG10202002515Q A SG 10202002515QA
- Authority
- SG
- Singapore
- Prior art keywords
- reflective mask
- reflective
- substrate
- semiconductor device
- device manufacturing
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
- G03F1/84—Inspecting
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/52—Reflectors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
- G03F1/24—Reflection masks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/48—Protective coatings
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
- G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
- G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
- G21K1/062—Devices having a multilayer structure
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K2201/00—Arrangements for handling radiation or particles
- G21K2201/06—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements
- G21K2201/067—Construction details
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Public Health (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Health & Medical Sciences (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019061658 | 2019-03-27 | ||
| JP2020042971A JP7401356B2 (en) | 2019-03-27 | 2020-03-12 | Substrate with multilayer reflective film, reflective mask blank, reflective mask, and semiconductor device manufacturing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG10202002515QA true SG10202002515QA (en) | 2020-10-29 |
Family
ID=72716153
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG10202002515QA SG10202002515QA (en) | 2019-03-27 | 2020-03-19 | Substrate with a multilayer reflective film, reflective mask blank, reflective mask, and semiconductor device manufacturing method |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US11256167B2 (en) |
| JP (2) | JP7401356B2 (en) |
| KR (1) | KR20200115191A (en) |
| CN (1) | CN118567174A (en) |
| SG (1) | SG10202002515QA (en) |
| TW (1) | TWI827823B (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPWO2021060253A1 (en) * | 2019-09-26 | 2021-04-01 | ||
| US11852965B2 (en) | 2020-10-30 | 2023-12-26 | Taiwan Semiconductor Manufacturing Co., Ltd. | Extreme ultraviolet mask with tantalum base alloy absorber |
| CN113573458B (en) * | 2021-06-11 | 2024-06-25 | 中科超睿(青岛)技术有限公司 | Nano gradient neutron target and preparation method thereof |
| US11762278B2 (en) | 2021-06-16 | 2023-09-19 | Applied Materials, Inc. | Multilayer extreme ultraviolet reflectors |
| JP7484826B2 (en) * | 2021-06-18 | 2024-05-16 | 信越化学工業株式会社 | Reflective mask blank and method for manufacturing a reflective mask |
| JP2023053673A (en) * | 2021-10-01 | 2023-04-13 | 信越化学工業株式会社 | Substrate with film for reflective mask blank, reflective mask blank, and method for manufacturing reflective mask |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5310603A (en) | 1986-10-01 | 1994-05-10 | Canon Kabushiki Kaisha | Multi-layer reflection mirror for soft X-ray to vacuum ultraviolet ray |
| JPH0797159B2 (en) | 1986-10-01 | 1995-10-18 | キヤノン株式会社 | Multi-layer mirror for soft X-ray / VUV |
| JPH0816720B2 (en) | 1992-04-21 | 1996-02-21 | 日本航空電子工業株式会社 | Soft X-ray multilayer mirror |
| JP5067483B2 (en) | 2008-06-19 | 2012-11-07 | 旭硝子株式会社 | Reflective mask blank for EUV lithography |
| DE102008042212A1 (en) | 2008-09-19 | 2010-04-01 | Carl Zeiss Smt Ag | Reflective optical element and method for its production |
| JP5419612B2 (en) * | 2008-10-23 | 2014-02-19 | Ｈｏｙａ株式会社 | Mask blank substrate manufacturing method, reflective mask blank manufacturing method, and reflective mask manufacturing method |
| US9612521B2 (en) | 2013-03-12 | 2017-04-04 | Applied Materials, Inc. | Amorphous layer extreme ultraviolet lithography blank, and manufacturing and lithography systems therefor |
| US9618836B2 (en) * | 2014-04-22 | 2017-04-11 | Asahi Glass Company, Limited | Reflective mask blank for EUV lithography, substrate with funtion film for the mask blank, and methods for their production |
| US9690016B2 (en) * | 2014-07-11 | 2017-06-27 | Applied Materials, Inc. | Extreme ultraviolet reflective element with amorphous layers and method of manufacturing thereof |
| JP6651314B2 (en) | 2014-12-26 | 2020-02-19 | Hoya株式会社 | Reflective mask blank, reflective mask and method of manufacturing the same, and method of manufacturing semiconductor device |
| JP6297512B2 (en) | 2015-02-09 | 2018-03-20 | Hoya株式会社 | Manufacturing method of mask blank substrate, manufacturing method of substrate with multilayer film, manufacturing method of mask blank, and manufacturing method of transfer mask |
| JP7006078B2 (en) * | 2017-08-10 | 2022-01-24 | Ａｇｃ株式会社 | Reflective mask blank, and reflective mask |
-
2020
- 2020-03-12 JP JP2020042971A patent/JP7401356B2/en active Active
- 2020-03-19 SG SG10202002515QA patent/SG10202002515QA/en unknown
- 2020-03-19 KR KR1020200033643A patent/KR20200115191A/en active Search and Examination
- 2020-03-25 US US16/829,906 patent/US11256167B2/en active Active
- 2020-03-26 CN CN202410708342.2A patent/CN118567174A/en active Pending
- 2020-03-26 TW TW109110206A patent/TWI827823B/en active
-
2022
- 2022-01-13 US US17/575,463 patent/US11650494B2/en active Active
-
2023
- 2023-12-07 JP JP2023206719A patent/JP2024023584A/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| US20220137501A1 (en) | 2022-05-05 |
| TWI827823B (en) | 2024-01-01 |
| CN118567174A (en) | 2024-08-30 |
| US11256167B2 (en) | 2022-02-22 |
| JP7401356B2 (en) | 2023-12-19 |
| JP2024023584A (en) | 2024-02-21 |
| TW202105042A (en) | 2021-02-01 |
| JP2020166249A (en) | 2020-10-08 |
| KR20200115191A (en) | 2020-10-07 |
| TW202411771A (en) | 2024-03-16 |
| US11650494B2 (en) | 2023-05-16 |
| US20200310244A1 (en) | 2020-10-01 |
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