SG11201807712YA - Method for manufacturing reflective mask blank, reflective mask blank, method for manufacturing reflective mask, reflective mask, and method for manufacturing semiconductor device - Google Patents

Method for manufacturing reflective mask blank, reflective mask blank, method for manufacturing reflective mask, reflective mask, and method for manufacturing semiconductor device

Info

Publication number
SG11201807712YA
SG11201807712YA SG11201807712YA SG11201807712YA SG11201807712YA SG 11201807712Y A SG11201807712Y A SG 11201807712YA SG 11201807712Y A SG11201807712Y A SG 11201807712YA SG 11201807712Y A SG11201807712Y A SG 11201807712YA SG 11201807712Y A SG11201807712Y A SG 11201807712YA
Authority
SG
Singapore
Prior art keywords
reflective mask
manufacturing
mask blank
multilayer reflective
reflective film
Prior art date
Application number
SG11201807712YA
Inventor
Tsutomu Shoki
Takahiro Onoue
Original Assignee
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Publication of SG11201807712YA publication Critical patent/SG11201807712YA/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/42—Alignment or registration features, e.g. alignment marks on the mask substrates
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/44—Testing or measuring features, e.g. grid patterns, focus monitors, sawtooth scales or notched scales
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2008—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the reflectors, diffusers, light or heat filtering means or anti-reflective means used

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)

Abstract

A method of manufacturing a reflective mask blank includes: forming a multilayer reflective film, which is configured to reflect EUV light, on a substrate to form a substrate with a multilayer reflective film; subjecting the substrate with a multilayer reflective film to defect inspection; forming an absorber film, which is configured to absorb the EUV light, on the multilayer reflective film of the substrate with a multilayer reflective film; forming a reflective mask blank, in which an alignment region is formed in an outer peripheral edge region of a pattern formation region by removing the absorber film so that the multilayer reflective film of an area including an element serving as a reference of defect information on the multilayer reflective film is exposed in the alignment region; and performing defect management of the reflective mask blank through use of the alignment region.
SG11201807712YA 2016-03-31 2017-03-21 Method for manufacturing reflective mask blank, reflective mask blank, method for manufacturing reflective mask, reflective mask, and method for manufacturing semiconductor device SG11201807712YA (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2016072287 2016-03-31
JP2016190721 2016-09-29
PCT/JP2017/011180 WO2017169973A1 (en) 2016-03-31 2017-03-21 Method for manufacturing reflective mask blank, reflective mask blank, method for manufacturing reflective mask, reflective mask, and method for manufacturing semiconductor device

Publications (1)

Publication Number Publication Date
SG11201807712YA true SG11201807712YA (en) 2018-10-30

Family

ID=59964408

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201807712YA SG11201807712YA (en) 2016-03-31 2017-03-21 Method for manufacturing reflective mask blank, reflective mask blank, method for manufacturing reflective mask, reflective mask, and method for manufacturing semiconductor device

Country Status (6)

Country Link
US (2) US11048159B2 (en)
JP (2) JP6792901B2 (en)
KR (2) KR102393311B1 (en)
SG (1) SG11201807712YA (en)
TW (2) TWI802031B (en)
WO (1) WO2017169973A1 (en)

Families Citing this family (6)

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TWI684225B (en) * 2015-08-28 2020-02-01 美商克萊譚克公司 Self directed metrology and pattern classification
WO2019078205A1 (en) * 2017-10-17 2019-04-25 Hoya株式会社 Substrate equipped with multi-layer reflection film, reflection-type mask blank, reflection-type mask, and semiconductor device manufacturing process
DE102017219217B4 (en) * 2017-10-26 2021-03-25 Carl Zeiss Smt Gmbh Masks for microlithography, methods for determining edge positions of the images of the structures of such a mask and system for carrying out such a method
JP7310472B2 (en) * 2019-09-13 2023-07-19 信越化学工業株式会社 Manufacturing method of reflective mask blank
TWI739376B (en) * 2019-12-13 2021-09-11 南臺學校財團法人南臺科技大學 A method for detecting a pellicle membrane and a detecting system
US20220308438A1 (en) 2021-03-24 2022-09-29 Hoya Corporation Method for manufacturing multilayered-reflective-film-provided substrate, reflective mask blank and method for manufacturing the same, and method for manufacturing reflective mask

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JP2004170948A (en) * 2002-10-30 2004-06-17 Nikon Corp Pattern transfer mask, method for manufacturing mask and exposure method
US7495307B2 (en) 2003-11-20 2009-02-24 Ideal Star Inc. Columnar electric device
JP5327046B2 (en) 2007-04-17 2013-10-30 旭硝子株式会社 EUV mask blank
JP2009251412A (en) * 2008-04-09 2009-10-29 Renesas Technology Corp Device and method for inspecting mask blank, method of manufacturing reflection type exposure mask, and method of manufacturing semiconductor integrated circuit
US8372564B2 (en) * 2008-05-09 2013-02-12 Hoya Corporation Reflective mask, reflective mask blank and method of manufacturing reflective mask
JP2013131728A (en) 2011-12-22 2013-07-04 Dainippon Printing Co Ltd Substrate for reflection type mask, reflection type mask blank, reflection type mask, and manufacturing methods of these
JP6460617B2 (en) * 2012-02-10 2019-01-30 Hoya株式会社 Reflective mask blank, reflective mask manufacturing method, and reflective mask blank manufacturing method
JP6460619B2 (en) * 2012-03-12 2019-01-30 Hoya株式会社 Reflective mask blank and method of manufacturing reflective mask
JP2013222811A (en) 2012-04-16 2013-10-28 Lasertec Corp Euv mask blanks, mask manufacturing method, and alignment method
JP6106413B2 (en) * 2012-11-13 2017-03-29 Hoya株式会社 Reflective mask blank and method of manufacturing reflective mask
TWI625592B (en) * 2012-12-28 2018-06-01 Hoya Corp Substrate for substrate material, substrate with multilayer reflective film, reflective mask material, reflective mask, method for manufacturing substrate for mask material, method for manufacturing substrate with multilayer reflective film, and method for manufacturing semiconductor device
KR102219307B1 (en) 2013-02-22 2021-02-23 호야 가부시키가이샤 Method for manufacturing reflective mask blank, and method for manufacturing reflective mask
WO2015046095A1 (en) 2013-09-27 2015-04-02 Hoya株式会社 Substrate provided with conductive film, substrate provided with multi-layer reflection film, reflective mask blank, reflective mask, and semiconductor device manufacturing method
JP6282844B2 (en) * 2013-11-06 2018-02-21 Hoya株式会社 Substrate with thin film and method for manufacturing transfer mask
WO2015141230A1 (en) 2014-03-20 2015-09-24 凸版印刷株式会社 Reflective photomask blank, reflective photomask, reflective photomask production method, exposure method, and exposure device
WO2015146140A1 (en) 2014-03-24 2015-10-01 凸版印刷株式会社 Phase defect evaluation method for euv mask, method for manufacturing euv mask, euv mask blank, and euv mask
JP6815995B2 (en) * 2015-06-17 2021-01-20 Hoya株式会社 Method for manufacturing a substrate with a conductive film, a substrate with a multilayer reflective film, a reflective mask blank, a reflective mask, and a semiconductor device.

Also Published As

Publication number Publication date
JP7286604B2 (en) 2023-06-05
TW202205005A (en) 2022-02-01
US11048159B2 (en) 2021-06-29
TWI802031B (en) 2023-05-11
JP2021012399A (en) 2021-02-04
KR20180130495A (en) 2018-12-07
JPWO2017169973A1 (en) 2019-03-14
KR102393311B1 (en) 2022-05-02
US20210294202A1 (en) 2021-09-23
KR20220065071A (en) 2022-05-19
US11852964B2 (en) 2023-12-26
JP6792901B2 (en) 2020-12-02
TW201802571A (en) 2018-01-16
WO2017169973A1 (en) 2017-10-05
KR102646681B1 (en) 2024-03-12
US20190079382A1 (en) 2019-03-14
TWI743100B (en) 2021-10-21

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