TW202205005A - Method of manufacturing a reflective mask blank, method of manufacturing a reflective mask, and method of manufacturing a semiconductor device - Google Patents

Method of manufacturing a reflective mask blank, method of manufacturing a reflective mask, and method of manufacturing a semiconductor device Download PDF

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TW202205005A
TW202205005A TW110136941A TW110136941A TW202205005A TW 202205005 A TW202205005 A TW 202205005A TW 110136941 A TW110136941 A TW 110136941A TW 110136941 A TW110136941 A TW 110136941A TW 202205005 A TW202205005 A TW 202205005A
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Taiwan
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film
substrate
reflective
defect
multilayer reflective
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TW110136941A
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Chinese (zh)
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TWI802031B (en
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笑喜勉
尾上貴弘
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日商Ｈｏｙａ股份有限公司
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/42—Alignment or registration features, e.g. alignment marks on the mask substrates
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/44—Testing or measuring features, e.g. grid patterns, focus monitors, sawtooth scales or notched scales
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2008—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the reflectors, diffusers, light or heat filtering means or anti-reflective means used

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)

Abstract

To provide a reflective mask blank capable of acquiring accurate defect information including defect position information in a multilayer reflective film so as to perform defect control of the reflective mask blank with high accuracy. A multilayer reflective film reflecting EUV light is formed on a substrate to obtain a multilayer-reflective-film-coated substrate. The multilayer-reflective-film-coated substrate is subjected to defect inspection. An absorber film absorbing the EUV light is formed on the multilayer reflective film of the multilayer-reflective-film-coated substrate. In an outer peripheral region around a pattern forming region, an alignment region is formed where the absorber film is removed to expose the multilayer reflective film in a region including a fiducial one for defect information on the multilayer reflective film. Thus, a reflective mask blank with the alignment region is formed. By using the alignment region, defect control of the reflective mask blank is carried out.

Description

反射型光罩基底之製造方法、反射型光罩之製造方法、及半導體裝置之製造方法Method for manufacturing reflective mask base, method for manufacturing reflective mask, and method for manufacturing semiconductor device

本發明係關於一種半導體裝置之製造中所使用之反射型光罩基底之製造方法、反射型光罩基底、反射型光罩之製造方法及反射型光罩。The present invention relates to a method for manufacturing a reflective photomask substrate used in the manufacture of a semiconductor device, a reflective photomask substrate, a method for manufacturing a reflective photomask, and a reflective photomask.

通常，於半導體裝置之製造步驟中，使用光微影法而進行微細圖案之形成。又，該微細圖案之形成通常要使用多片被稱為光罩之轉印用遮罩。該轉印用遮罩通常係於透光性之玻璃基板上設置有包含金屬薄膜等之微細圖案者，於該轉印用遮罩之製造中亦使用光微影法。 藉由光微影法製造轉印用遮罩時，使用包含用以於玻璃基板等透光性基板上形成轉印圖案(光罩圖案)之薄膜(例如遮光膜等)的光罩基底。使用該光罩基底之轉印用遮罩之製造係經由如下步驟而進行：描繪步驟，對形成於光罩基底上之抗蝕膜實施所期望之圖案描繪；顯影步驟，描繪後，對上述抗蝕膜進行顯影而形成所期望之抗蝕圖案；蝕刻步驟，以該抗蝕圖案作為遮罩而對上述薄膜進行蝕刻；及剝離去除殘留之抗蝕圖案之步驟。於上述顯影步驟中，對形成於光罩基底上之抗蝕膜實施所期望之圖案描繪後供給顯影液，將可溶於顯影液之抗蝕膜之部位溶解，形成抗蝕圖案。又，於上述蝕刻步驟中，以該抗蝕圖案作為遮罩，藉由乾式蝕刻或濕式蝕刻，而去除未形成抗蝕圖案之薄膜露出之部位，藉此將所期望之光罩圖案形成於透光性基板上。如此，完成轉印用遮罩。 作為轉印用遮罩之種類，已知有先前之於透光性基板上具有包含鉻系材料之遮光膜圖案之二元型光罩，除此以外，已知有相位偏移型光罩。 又，近年來，於半導體產業中，伴隨半導體器件之高積體化，逐漸需要超出先前之使用紫外光之光微影法之轉印界限的微細圖案。為了可形成此種微細圖案，而期待使用極紫外(Extreme Ultra Violet：以下稱為「EUV」)光之曝光技術即EUV微影術。此處，EUV光係指軟X射線區域或真空紫外線區域之波長帶之光，具體而言係波長為0.2～100 nm左右之光。作為該EUV微影術中所使用之光罩，提出有反射型光罩。此種反射型光罩係於基板上形成有反射作為曝光之光之EUV光之多層反射膜，且於該多層反射膜上呈圖案狀地形成有吸收EUV光之吸收體膜者。 如上所述，由於對微影術步驟中之微細化之要求提高，因此該微影術步驟中之問題正不斷變得顯著。其中之一為關於微影術步驟中所使用之光罩基底用基板等之缺陷資訊之問題。 先前，於基底檢查等中，將基板中心設為原點(0，0)，使用缺陷檢查裝置所管理之座標，根據距原點之距離而特定出基板之缺陷之存在位置。因此，絕對值座標之基準不明確，位置精度較低，裝置間亦存在檢測之偏差，於圖案描繪時，於避開缺陷而對圖案形成用薄膜進行圖案化之情形時亦難以實現μm級之回避。因此，改變轉印圖案之方向，或以mm級粗略地使轉印之位置偏移而回避缺陷。 於此種狀況下，為了提高缺陷位置之檢查精度，提出例如於光罩基底用基板形成基準標記，將其作為基準位置而特定缺陷之位置。 於專利文獻1中，揭示有為了可準確地特定以球相當直徑計為30 nm左右之微小之缺陷之位置，而於EUV微影術用反射型光罩基底用基板之成膜面形成大小以球相當直徑計為30～100 nm之至少3個標記。 [先前技術文獻] [專利文獻] 專利文獻1：國際公開第2008/129914號公報Generally, in the manufacturing process of a semiconductor device, the formation of a fine pattern is performed using a photolithography method. In addition, the formation of the fine pattern is generally performed by using a plurality of masks for transfer, which are called photomasks. The mask for transfer is usually provided on a translucent glass substrate with a fine pattern including a metal thin film and the like, and photolithography is also used in the manufacture of the mask for transfer. When producing a mask for transfer by photolithography, a mask base including a thin film (eg, a light-shielding film, etc.) for forming a transfer pattern (mask pattern) on a translucent substrate such as a glass substrate is used. The production of the mask for transfer using the photomask substrate is carried out through the following steps: a drawing step, in which a desired pattern is drawn on the resist film formed on the photomask substrate; The etching film is developed to form a desired resist pattern; the etching step is to use the resist pattern as a mask to etch the above-mentioned thin film; and the step of stripping and removing the remaining resist pattern. In the above-mentioned developing step, a desired pattern is drawn on the resist film formed on the photomask base, and then a developer is supplied to dissolve the portion of the resist film soluble in the developer to form a resist pattern. In addition, in the above etching step, using the resist pattern as a mask, dry etching or wet etching is used to remove the exposed portion of the thin film where the resist pattern is not formed, thereby forming a desired mask pattern on the on a translucent substrate. In this way, the mask for transfer is completed. As a kind of the mask for transfer, a conventional binary type mask having a light-shielding film pattern containing a chromium-based material on a translucent substrate is known, and other than this, a phase shift type mask is known. In addition, in recent years, in the semiconductor industry, along with the high integration of semiconductor devices, there is a need for a fine pattern that exceeds the transfer limit of the conventional photolithography method using ultraviolet light. In order to form such a fine pattern, EUV lithography, which is an exposure technique using extreme ultraviolet (Extreme Ultra Violet: hereinafter referred to as "EUV") light, is expected. Here, EUV light refers to light in the wavelength band of the soft X-ray region or vacuum ultraviolet region, and specifically, light with a wavelength of about 0.2 to 100 nm. As a mask used in this EUV lithography, a reflection type mask is proposed. This type of reflective mask is formed on a substrate with a multilayer reflective film that reflects EUV light as exposure light, and an absorber film that absorbs EUV light is formed in a pattern on the multilayer reflective film. As described above, problems in the lithography step are becoming increasingly prominent due to the increased demands for miniaturization in the lithography step. One of them is the problem of defect information, such as substrates for photomask bases used in lithography steps. Conventionally, in base inspection or the like, the center of the substrate is set as the origin (0, 0), and the position where the defect of the substrate exists is specified according to the distance from the origin using the coordinates managed by the defect inspection apparatus. Therefore, the reference of absolute value coordinates is not clear, the positional accuracy is low, and there is also a variation in detection between devices, and it is difficult to achieve μm level when patterning a thin film for pattern formation while avoiding defects during pattern drawing. avoid. Therefore, the direction of the transfer pattern is changed, or the transfer position is roughly shifted in mm order to avoid defects. Under such circumstances, in order to improve the inspection accuracy of the defect position, for example, it is proposed to form a reference mark on the mask base substrate, and to specify the position of the defect by using this as a reference position. In Patent Document 1, it is disclosed that, in order to precisely specify the position of a microscopic defect with a spherical equivalent diameter of about 30 nm, it is disclosed that the size of the defect is formed on the film-forming surface of the reflective mask base substrate for EUV lithography. The equivalent diameter of the sphere is at least 3 marks of 30-100 nm. [Prior Art Literature] [Patent Literature] Patent Document 1: International Publication No. 2008/129914

[發明所欲解決之問題] 藉由如上述專利文獻1所揭示之使用用以特定缺陷之位置之基準標記之方法，可提高光罩基底之缺陷位置之檢查精度。 且說，於將EUV光用作曝光之光之反射型光罩中，尤其是存在於多層反射膜之缺陷幾乎無法修正，而且可能於轉印圖案上成為重大之相位缺陷，因此為了減少轉印圖案缺陷，重要的是多層反射膜上之缺陷資訊。所以，較理想為於至少多層反射膜成膜後進行缺陷檢查，獲取缺陷資訊。因此，認為較佳為於在基板上成膜多層反射膜而製作之附多層反射膜之基板的例如多層反射膜形成基準標記。 然而，於將基準標記形成於多層反射膜之情形時，以形成於多層反射膜之基準標記為基準進行多層反射膜上之缺陷檢查，其後之光罩製造中之電子束描繪步驟中，以成膜吸收體膜之後之基準標記進行對準，因此可能由於在凹形狀之基準標記上成膜吸收體膜而導致標記形狀之變化成為對準誤差。又，於不僅獲取附多層反射膜之基板之缺陷資訊，還進行反射型光罩基底之缺陷檢查而獲取反射型光罩基底之缺陷資訊之情形時，若以上述成膜吸收體膜後之基準標記進行對準，則會產生對準誤差，即便進行了以基準標記為基準之高精度之缺陷檢查，亦有反射型光罩基底之缺陷位置資訊(缺陷座標)之精度惡化之虞。 另一方面，伴隨使用EUV光之微影術中之急速之圖案之微細化，對作為反射型光罩之EUV光罩所要求之缺陷尺寸(Defect Size)亦逐年變得微細，為了發現此種微細缺陷，而缺陷檢查所使用之檢查光源波長正不斷接近曝光之光(例如EUV光)之光源波長。 例如，作為EUV光罩、或其原版即EUV光罩基底、附多層反射膜之基板、及基板(substrate)之缺陷檢查裝置，例如檢查光源波長為266 nm之Lasertec公司製造之EUV曝光用光罩·基板/基底缺陷檢查裝置「MAGICSM7360」、檢查光源波長為193 nm之KLA-Tencor公司製造之EUV·光罩/基底缺陷檢查裝置「Teron600系列，例如Teron610」等已經普及。而且，近年來，提出有將檢查光源波長設為曝光光源波長之13.5 nm之ABI(Actinic Blank Inspection，光化基底檢查)裝置。 然而，對於在多層反射膜設置基準標記之情形時之上述問題，考慮於吸收體膜形成後在吸收體膜之上部形成基準標記，以該基準標記為基準而進行反射型光罩基底之缺陷檢查。然而，例如於使用上述ABI裝置進行反射型光罩基底之缺陷檢查之情形時，由於吸收體膜對於13.5 nm之波長之反射率較低，因此會產生無法高感度地進行缺陷檢測之另一問題。 因此，本發明係鑒於此種先前之問題而完成者，其目的在於：第1，提供可獲取包含多層反射膜中之缺陷位置資訊之精度良好之缺陷資訊，而高精度地進行反射型光罩基底之缺陷管理的反射型光罩基底及其製造方法。 本發明之目的在於：第2，提供使用該反射型光罩基底而減少缺陷之反射型光罩。 [解決問題之技術手段] 本發明者為了解決上述問題，發現：於基板上成膜多層反射膜，對多層反射膜進行缺陷檢查，其後，於多層反射膜上成膜吸收體膜，設為反射型光罩基底，該反射型光罩基底係形成有去除圖案形成區域之外周緣區域之吸收體膜之一部分而使包含成為多層反射膜上之缺陷資訊之基準之例如第1基準標記之區域之多層反射膜露出的對準區域，其後，使用該對準區域進行反射型光罩基底之缺陷管理，藉此可解決上述問題。 本發明者基於上述解明事實，繼續進行銳意研究，結果完成了以下之構成1～13之發明。 (構成1) 一種反射型光罩基底之製造方法，其特徵在於：其係至少於基板上形成有反射EUV光之多層反射膜，且於該多層反射膜上形成有吸收EUV光之吸收體膜的反射型光罩基底之製造方法，且包含如下步驟：於上述基板上成膜上述多層反射膜而形成附多層反射膜之基板；對上述附多層反射膜之基板進行缺陷檢查；於上述附多層反射膜之基板之上述多層反射膜上成膜上述吸收體膜；形成反射型光罩基底，該反射型光罩基底係於圖案形成區域之外周緣區域形成有去除上述吸收體膜而使包含成為上述多層反射膜上之缺陷資訊之基準者之區域之上述多層反射膜露出的對準區域；及使用上述對準區域進行上述反射型光罩基底之缺陷管理。 (構成2) 如構成1所記載之反射型光罩基底之製造方法，其特徵在於：上述反射型光罩基底之缺陷管理係使用形成於上述對準區域內之第1基準標記進行。 (構成3) 如構成2所記載之反射型光罩基底之製造方法，其特徵在於：包含於上述吸收體膜形成成為上述第1基準標記之基準之第2基準標記的步驟，且上述反射型光罩基底之缺陷管理包含：檢測以上述第2基準標記為基準之上述第1基準標記之座標，以上述第2基準標記為基準而轉換上述附多層反射膜之基板之缺陷資訊。 (構成4) 如構成1至3中任一項所記載之反射型光罩基底之製造方法，其特徵在於：以上述第2基準標記為基準之上述第1基準標記之座標之檢測係使用波長短於100 nm之檢查光而進行。 (構成5) 如構成1至4中任一項所記載之反射型光罩基底之製造方法，其特徵在於：上述附多層反射膜之基板之缺陷檢查係使用波長短於100 nm之檢查光而進行。 (構成6) 一種反射型光罩基底，其特徵在於：其係至少於基板上形成有反射EUV光之多層反射膜，且於該多層反射膜上形成有吸收EUV光之吸收體膜者，且於圖案形成區域之外周緣區域，形成有使包含成為上述多層反射膜上之缺陷資訊之基準者的區域之上述多層反射膜露出之對準區域。 (構成7) 如構成6所記載之反射型光罩基底，其特徵在於：於上述對準區域內，形成有作為成為上述多層反射膜上之缺陷資訊之基準者的第1基準標記。 (構成8) 如構成7所記載之反射型光罩基底，其特徵在於：於上述吸收體膜中之上述對準區域之附近，形成有成為上述第1基準標記之基準之第2基準標記。 (構成9) 一種反射型光罩之製造方法，其特徵在於：對藉由如構成1至5中任一項所記載之反射型光罩基底之製造方法而獲得之反射型光罩基底或如構成6至8中任一項所記載之反射型光罩基底中之上述吸收體膜進行圖案化，而形成吸收體膜圖案。 (構成10) 一種反射型光罩，其特徵在於：其係至少於基板上形成有反射EUV光之多層反射膜，且於該多層反射膜上形成有吸收EUV光之吸收體膜圖案者，且於圖案形成區域之外周緣區域，形成有使包含成為上述多層反射膜上之缺陷資訊之基準者的區域之上述多層反射膜露出之對準區域。 (構成11) 如構成10所記載之反射型光罩，其特徵在於：於上述對準區域內，形成有作為成為上述多層反射膜上之缺陷資訊之基準者的第1基準標記。 (構成12) 如構成11所記載之反射型光罩，其特徵在於：於上述吸收體膜圖案中之上述對準區域之附近形成有成為上述第1基準標記之基準之第2基準標記。 (構成13) 一種半導體裝置之製造方法，其係藉由使用如構成10至12中任一項所記載之反射型光罩將轉印圖案曝光轉印於半導體基板上之抗蝕膜，而製造半導體裝置。 本發明者為了進一步解決上述問題，發現：於基板上成膜多層反射膜，對多層反射膜進行缺陷檢查，其後，於多層反射膜上成膜吸收體膜，但不於圖案形成區域之外周緣區域成膜吸收體膜，而設為如下之反射型光罩基底，該反射型光罩基底係形成有使包含成為多層反射膜上之缺陷資訊之基準之第1基準標記之區域之多層反射膜露出的對準區域，且於吸收體膜中之上述對準區域之圖案形成區域側附近形成有成為上述第1基準標記之基準之第2基準標記，其後，使用該對準區域進行反射型光罩基底之缺陷管理，藉此可解決上述問題。 本發明者基於上述解明事實，完成了以下之構成14～23之發明。 (構成14) 一種反射型光罩基底之製造方法，其特徵在於：其係至少於基板上形成有反射EUV光之多層反射膜，且於該多層反射膜上形成有吸收EUV光之吸收體膜的反射型光罩基底之製造方法，且包含如下步驟：於上述基板上成膜上述多層反射膜而形成附多層反射膜之基板；對上述附多層反射膜之基板進行缺陷檢查；及於上述附多層反射膜之基板之上述多層反射膜上，成膜上述吸收體膜而形成反射型光罩基底；且上述吸收體膜之成膜係包含如下步驟：於圖案形成區域之外周緣區域，形成未成膜上述吸收體膜而使包含成為上述多層反射膜上之缺陷資訊之基準之第1基準標記之區域之上述多層反射膜露出的對準區域；且該製造方法進而包含如下步驟：於上述吸收體膜中之上述對準區域之圖案形成區域側附近，形成成為上述第1基準標記之基準之第2基準標記；及使用上述對準區域進行上述反射型光罩基底之缺陷管理。 (構成15) 如構成14所記載之反射型光罩基底之製造方法，其特徵在於：於形成上述對準區域之步驟中，以不成膜上述吸收體膜而使上述多層反射膜露出之方式設置遮蔽構件從而成膜上述吸收體膜。 (構成16) 如構成14或15所記載之反射型光罩基底之製造方法，其特徵在於：上述反射型光罩基底之缺陷管理係使用形成於上述對準區域內之上述第1基準標記進行。 (構成17) 如構成14至16中任一項所記載之反射型光罩基底之製造方法，其特徵在於：上述反射型光罩基底之缺陷管理包含：檢測以上述第2基準標記為基準之上述第1基準標記之座標，以上述第2基準標記為基準而轉換上述附多層反射膜之基板之缺陷資訊。 (構成18) 如構成17所記載之反射型光罩基底之製造方法，其特徵在於：以上述第2基準標記為基準之上述第1基準標記之座標之檢測係使用波長短於100 nm之檢查光而進行。 (構成19) 如構成14至18中任一項所記載之反射型光罩基底之製造方法，其特徵在於：上述附多層反射膜之基板之缺陷檢查係使用波長短於100 nm之檢查光而進行。 (構成20) 一種反射型光罩基底，其特徵在於：其係至少於基板上形成有反射EUV光之多層反射膜，且於該多層反射膜上形成有吸收EUV光之吸收體膜者，且於圖案形成區域之外周緣區域，形成有使包含成為上述多層反射膜上之缺陷資訊之基準之第1基準標記之區域之上述多層反射膜露出的對準區域，且於上述吸收體膜中之上述對準區域之圖案形成區域側附近形成有成為上述第1基準標記之基準之第2基準標記。 (構成21) 一種反射型光罩之製造方法，其特徵在於：對藉由如構成14至19中任一項所記載之反射型光罩基底之製造方法而獲得之反射型光罩基底或如構成20所記載之反射型光罩基底中之上述吸收體膜進行圖案化，形成吸收體膜圖案。 (構成22) 一種反射型光罩，其特徵在於：其係至少於基板上形成有反射EUV光之多層反射膜，且於該多層反射膜上形成有吸收EUV光之吸收體膜圖案者，且於圖案形成區域之外周緣區域，形成有使包含成為上述多層反射膜上之缺陷資訊之基準之第1基準標記之區域之上述多層反射膜露出的對準區域，且於上述吸收體膜圖案中之上述對準區域之圖案形成區域側附近形成有成為上述第1基準標記之基準之第2基準標記。 (構成23) 一種半導體裝置之製造方法，其係藉由使用如構成22所記載之反射型光罩將轉印圖案曝光轉印於半導體基板上之抗蝕膜，而製造半導體裝置。 [發明之效果] 根據本發明，可提供可獲取包含多層反射膜中之缺陷位置資訊之精度良好之缺陷資訊，從而高精度地進行反射型光罩基底之缺陷管理的反射型光罩基底及其製造方法。 又，根據本發明，可提供藉由使用該反射型光罩基底，基於該等缺陷資訊，進行描繪資料之修正而減少缺陷之反射型光罩。[Problems to be Solved by Invention] By using the method of using the fiducial mark for specifying the position of the defect as disclosed in the above-mentioned Patent Document 1, the inspection accuracy of the defect position of the photomask substrate can be improved. Moreover, in a reflective mask using EUV light as exposure light, the defects existing in the multilayer reflective film can hardly be corrected, and may become a significant phase defect on the transfer pattern. Therefore, in order to reduce the transfer pattern Defects, the important thing is the defect information on the multilayer reflective film. Therefore, it is desirable to perform defect inspection after at least the formation of the multilayer reflective film to obtain defect information. Therefore, it is considered preferable to form a fiducial mark on a substrate with a multilayer reflective film, such as a multilayer reflective film, which is produced by depositing a multilayer reflective film on a substrate. However, when the fiducial mark is formed on the multilayer reflective film, the defect inspection on the multilayer reflective film is performed based on the fiducial mark formed on the multilayer reflective film, and in the subsequent electron beam drawing step in mask manufacturing, the Since the fiducial marks after forming the absorber film are aligned, there is a possibility that a change in the shape of the marks due to forming the absorber film on the concave fiducial marks may become an alignment error. In addition, in the case where not only the defect information of the substrate with the multi-layer reflective film is obtained, but also the defect inspection of the reflective photomask substrate is performed to obtain the defect information of the reflective photomask substrate. If the marks are aligned, an alignment error will occur, and even if a high-precision defect inspection based on the fiducial mark is performed, there is a possibility that the accuracy of the defect position information (defect coordinates) of the reflective mask substrate will deteriorate. On the other hand, with the rapid pattern miniaturization in lithography using EUV light, the defect size (Defect Size) required for an EUV mask as a reflective mask is also getting smaller year by year. Defects, and the wavelength of the inspection light source used for defect inspection is constantly approaching the wavelength of the light source of the exposure light (eg EUV light). For example, as a defect inspection device for EUV masks, or their originals, namely EUV mask substrates, substrates with multi-layer reflective films, and substrates, such as EUV exposure masks manufactured by Lasertec with a light source wavelength of 266 nm・Substrate/substrate defect inspection apparatus "MAGICSM7360", EUV mask/substrate defect inspection apparatus "Teron600 series, such as Teron610" manufactured by KLA-Tencor with a light source wavelength of 193 nm, etc. have become popular. Furthermore, in recent years, an ABI (Actinic Blank Inspection) apparatus has been proposed in which the wavelength of the inspection light source is 13.5 nm, which is the wavelength of the exposure light source. However, with regard to the above-mentioned problem when a reference mark is provided in a multilayer reflective film, it is considered that a reference mark is formed on the upper portion of the absorber film after the absorber film is formed, and the defect inspection of the reflective mask base is carried out using the reference mark as a reference . However, for example, in the case of using the above-mentioned ABI device for defect inspection of a reflective mask substrate, since the reflectance of the absorber film for the wavelength of 13.5 nm is low, another problem arises that defect inspection cannot be performed with high sensitivity. . Therefore, the present invention has been made in view of the above-mentioned problems, and its object is: first, to provide accurate defect information including defect position information in a multilayer reflective film, and to perform a reflective mask with high accuracy A reflective photomask substrate for defect management of substrates and a method of manufacturing the same. The object of the present invention is to: secondly, to provide a reflection type photomask which reduces defects by using the reflection type photomask base. [Technical means to solve problems] In order to solve the above-mentioned problems, the present inventors have found that a multilayer reflective film is formed on a substrate, a defect inspection is performed on the multilayer reflective film, and then an absorber film is formed on the multilayer reflective film to form a reflective mask base. A reflective mask base is formed by removing a part of the absorber film in the outer peripheral region of the pattern forming region to expose the multilayer reflective film including the region that serves as a reference for defect information on the multilayer reflective film, such as the first reference mark. The alignment area is then used for defect management of the reflective mask substrate, thereby solving the above problems. The inventors of the present invention have continued earnest research based on the above-mentioned clarified facts, and as a result, have completed the inventions of the following constitutions 1 to 13. (Constitution 1) A method for manufacturing a reflective mask substrate, characterized in that: a multilayer reflective film for reflecting EUV light is formed on at least a substrate, and an absorber film for absorbing EUV light is formed on the multilayer reflective film. A method for manufacturing a cover base, comprising the steps of: forming the above-mentioned multilayer reflective film on the above-mentioned substrate to form a substrate with the multilayer reflective film; performing defect inspection on the above-mentioned substrate with the multilayer reflective film; forming the above-mentioned absorber film on the above-mentioned multilayer reflective film; forming a reflective mask base, the reflective-type mask base is formed with the above-mentioned absorber film removed in the outer peripheral region of the pattern forming region, and the above-mentioned multilayer reflective film is formed. The alignment area exposed by the multilayer reflective film in the area of the reference of the defect information above; and the defect management of the reflective mask substrate is performed using the alignment area. (Constitution 2) The method for manufacturing a reflective photomask substrate according to the configuration 1, wherein the defect management of the reflective photomask substrate is performed using the first reference marks formed in the alignment region. (Composition 3) The method of manufacturing a reflective mask base according to the configuration 2, further comprising the step of forming a second reference mark serving as a reference for the first reference mark in the absorber film, and the reflective mask base has The defect management includes: detecting the coordinates of the first fiducial mark based on the second fiducial mark, and converting the defect information of the substrate with the multilayer reflective film based on the second fiducial mark. (Composition 4) The method for manufacturing a reflective mask substrate according to any one of the configurations 1 to 3, wherein the coordinates of the first fiducial mark based on the second fiducial mark are detected using a wavelength shorter than 100 nm. The inspection light is carried out. (Constitution 5) The method for manufacturing a reflective photomask substrate according to any one of constitutions 1 to 4, wherein the defect inspection of the substrate with the multilayer reflective film is performed using inspection light with a wavelength shorter than 100 nm. (Constitution 6) A reflective photomask substrate, characterized in that: it is formed at least on a substrate with a multilayer reflective film for reflecting EUV light, and an absorber film for absorbing EUV light is formed on the multilayer reflective film, and in a pattern forming area In the outer peripheral region, an alignment region for exposing the multilayer reflective film including a region serving as a reference for defect information on the multilayer reflective film is formed. (Constitution 7) The reflective mask base according to the configuration 6 is characterized in that a first reference mark serving as a reference for defect information on the multilayer reflective film is formed in the alignment region. (Composition 8) The reflective mask substrate according to the configuration 7 is characterized in that a second reference mark serving as a reference for the first reference mark is formed in the vicinity of the alignment region in the absorber film. (Constitution 9) A method for manufacturing a reflective photomask, characterized in that: a reflective photomask substrate obtained by the method for producing a reflective photomask substrate as described in any one of constitutions 1 to 5 or a reflective photomask substrate as described in constitutions 6 to 8 The absorber film in the reflective mask base according to any one of them is patterned to form an absorber film pattern. (composition 10) A reflective mask is characterized in that: it is at least formed on a substrate with a multilayer reflective film for reflecting EUV light, and an absorber film pattern for absorbing EUV light is formed on the multilayer reflective film, and the pattern forming area is formed. In the outer peripheral region, an alignment region for exposing the multilayer reflective film including a region serving as a reference for defect information on the multilayer reflective film is formed. (Composition 11) The reflective mask according to the configuration 10 is characterized in that a first reference mark serving as a reference for defect information on the multilayer reflective film is formed in the alignment region. (composition 12) The reflective mask according to the configuration 11 is characterized in that a second reference mark serving as a reference of the first reference mark is formed in the vicinity of the alignment region in the absorber film pattern. (composition 13) A method of manufacturing a semiconductor device, which manufactures a semiconductor device by exposing a transfer pattern to a resist film on a semiconductor substrate using the reflective mask described in any one of the configurations 10 to 12. In order to further solve the above problems, the present inventors have found that a multilayer reflective film is formed on a substrate, the multilayer reflective film is inspected for defects, and then an absorber film is formed on the multilayer reflective film, but not on the outer periphery of the pattern forming region. An absorber film is formed in the edge region to form a reflective mask substrate formed with a multilayer reflection in an area including a first reference mark serving as a reference for defect information on the multilayer reflective film The alignment region where the film is exposed, and a second fiducial mark serving as a reference for the first fiducial mark is formed in the absorber film in the vicinity of the pattern forming region side of the alignment region, and thereafter, the alignment region is used for reflection The defect management of the photomask substrate can solve the above problems. The inventors of the present invention have completed the inventions of the following constitutions 14 to 23 based on the above-described facts. (composition 14) A method for manufacturing a reflective mask substrate, characterized in that: a multilayer reflective film for reflecting EUV light is formed on at least a substrate, and an absorber film for absorbing EUV light is formed on the multilayer reflective film. A method for manufacturing a cover base, comprising the steps of: forming the multilayer reflective film on the substrate to form a substrate with the multilayer reflective film; inspecting the substrate with the multilayer reflective film for defects; and depositing the multilayer reflective film on the substrate On the above-mentioned multilayer reflective film of the substrate, the above-mentioned absorber film is formed into a film to form a reflection type mask base; and the film-forming system of the above-mentioned absorber film comprises the following steps: forming the above-mentioned absorber without film forming in the outer peripheral region of the pattern forming area film to expose the alignment region of the multilayer reflective film including the region of the first reference mark serving as a reference for defect information on the multilayer reflective film; and the manufacturing method further includes the step of: A second fiducial mark serving as a reference for the first fiducial mark is formed in the vicinity of the pattern forming region side of the alignment region, and defect management of the reflective mask base is performed using the alignment region. (composition 15) The method for manufacturing a reflective mask substrate according to the configuration 14, characterized in that in the step of forming the alignment region, a shielding member is provided so as to expose the multilayer reflective film without forming the absorber film. The above absorber film is formed into a film. (composition 16) The method for manufacturing a reflective photomask substrate according to the configuration 14 or 15, wherein the defect management of the reflective photomask substrate is performed using the first fiducial marks formed in the alignment region. (composition 17) The method for manufacturing a reflective photomask substrate according to any one of configurations 14 to 16, wherein the defect management of the reflective photomask substrate includes: detecting the first reference based on the second reference mark The coordinates of the marks are based on the second reference marks to convert the defect information of the substrate with the multilayer reflective film. (composition 18) The method for manufacturing a reflective mask substrate according to the configuration 17, wherein the detection of the coordinates of the first fiducial mark based on the second fiducial mark is performed using inspection light with a wavelength shorter than 100 nm. (composition 19) The method for manufacturing a reflective mask substrate according to any one of the configurations 14 to 18, wherein the defect inspection of the substrate with the multilayer reflective film is performed using inspection light with a wavelength shorter than 100 nm. (composition 20) A reflective photomask substrate, characterized in that: it is formed at least on a substrate with a multilayer reflective film for reflecting EUV light, and an absorber film for absorbing EUV light is formed on the multilayer reflective film, and in a pattern forming area In the outer peripheral region, an alignment region for exposing the multilayer reflective film including a region of a first reference mark serving as a reference for defect information on the multilayer reflective film is formed, and the alignment region in the absorber film is formed A second fiducial mark serving as a reference of the first fiducial mark is formed in the vicinity of the pattern forming region side. (composition 21) A method for manufacturing a reflective photomask, characterized in that: a reflective photomask substrate obtained by the method for producing a reflective photomask substrate as described in any one of the configurations 14 to 19 or as described in the configuration 20 The absorber film in the reflective photomask substrate is patterned to form an absorber film pattern. (composition 22) A reflective mask is characterized in that: it is at least formed on a substrate with a multilayer reflective film for reflecting EUV light, and an absorber film pattern for absorbing EUV light is formed on the multilayer reflective film, and the pattern forming area is formed. In the outer peripheral region, an alignment region for exposing the multilayer reflective film including a region of a first reference mark serving as a reference for defect information on the multilayer reflective film is formed, and the alignment in the absorber film pattern A second fiducial mark serving as a reference of the first fiducial mark is formed near the pattern forming region side of the region. (composition 23) A method of manufacturing a semiconductor device, which manufactures a semiconductor device by exposing a transfer pattern to a resist film on a semiconductor substrate using a reflective mask as described in the configuration 22. [Effect of invention] According to the present invention, it is possible to provide a reflective photomask substrate and a method for manufacturing the same, which can acquire accurate defect information including defect position information in a multilayer reflective film, thereby accurately performing defect management of the reflective photomask substrate. Furthermore, according to the present invention, it is possible to provide a reflective photomask in which defects are reduced by correcting drawing data based on the defect information using the reflective photomask substrate.

以下，對本發明之實施形態進行詳細敍述。 [第1實施形態之反射型光罩基底] 圖1係表示本發明之第1實施形態之反射型光罩基底之俯視圖。又，圖2係構成圖1所示之反射型光罩基底之附多層反射膜之基板之俯視圖。進而，圖6係表示本發明之第1實施形態之反射型光罩基底及反射型光罩之製造步驟之概略剖視圖。 如圖1、圖6所示，本發明之第1實施形態之反射型光罩基底30至少於基板10上形成有反射作為曝光之光之EUV光之多層反射膜21，且於該多層反射膜21上又形成有吸收EUV光之吸收體膜31(參照圖6(c))。於該反射型光罩基底30主表面上之圖案形成區域(圖1中虛線所示之區域內)之外周緣區域，形成有複數個對準區域32。圖案形成區域係吸收體膜31上之欲形成轉印圖案之區域，且係6英吋見方之基板中之例如132 mm×132 mm之區域。對準區域32係使包含成為上述多層反射膜21上之缺陷資訊之基準者之區域之多層反射膜21露出的區域(去除區域)。於本實施形態中，作為上述成為缺陷資訊之基準者之一例，於上述多層反射膜21形成有第1基準標記22。又，於對準區域32附近之吸收體膜31上，形成有成為上述第1基準標記22之基準並且用以於光罩製造中之電子束描繪步驟中進行對準之第2基準標記42。第2基準標記42與對準區域32內之第1基準標記例如為包含於以10 mm×10 mm包圍之區域內之位置關係即可。 又，第2基準標記42較理想為較第1基準標記22形成為相對較大。即，較佳為第2基準標記42之寬度或長度大於第1基準標記22之寬度或長度，及/或第2基準標記42之截面形狀之深度或高度大於第1基準標記22之截面形狀之深度或高度。 又，於本實施形態中，作為一例，上述對準區域32及第2基準標記42係形成於反射型光罩基底30之圖案形成區域之外周緣區域、具體而言為圖案形成區域之角隅附近之4個部位，但並不限定於此。於本實施形態中，由於對準區域32為使包含形成於上述多層反射膜21上之第1基準標記22之區域的多層反射膜21露出的區域，因此形成對準區域32之位置或個數亦根據形成於多層反射膜21之上述第1基準標記22之位置或個數而不同。再者，亦於下文進行說明，於本發明中，第1及第2基準標記之個數並無特別限定。關於第1及第2基準標記，最少需要3個，亦可為3個以上。 又，上述對準區域32只要使至少包含形成於多層反射膜21之上述第1基準標記22之區域露出，且可藉由進行附多層反射膜之基板20之缺陷檢查時使用之缺陷檢查裝置檢測上述第1基準標記22即可，因此在此條件下，上述對準區域32之形狀或大小等無須特別制約。 例如如圖1所示，對準區域32可設為鄰接於圖案形成區域之角隅之L字型，且可設為L字型之外周部之橫向之長度L1 為4.0 mm～8.0 mm，縱向之長度L2 為4.0 mm～8.0 mm。又，L字型之寬度W可設為1.0 mm～4.0 mm。 於此種本實施形態之反射型光罩基底30中，於圖案形成區域之外周緣區域，形成有例如去除吸收體膜31之一部分而使包含形成於多層反射膜21之第1基準標記22之區域之多層反射膜21露出的對準區域32，因此可使用該對準區域32進行反射型光罩基底30之缺陷管理。即，可使用形成於該對準區域32內之上述第1基準標記22，進行上述第1基準標記22與下述第2基準標記42之相對座標之管理。其結果為，可根據以上述第1基準標記22為基準之缺陷資訊(第1缺陷圖)，獲得以上述第2基準標記42為基準之缺陷資訊(第2缺陷圖)。 又，於使用ABI(Actinic Blank Inspection)裝置進行反射型光罩基底30之缺陷管理之情形時，該對準區域32由於使多層反射膜21露出，因此可高精度地檢測上述第1基準標記22。因此，可高精度地進行上述第1基準標記22與第2基準標記42之相對座標之管理，其結果為，可良好地進行以上述第2基準標記42為基準之反射型光罩基底30之缺陷管理。本發明之第1實施形態之反射型光罩基底30例如較佳為使用如利用波長短於100 nm(接近曝光之光(例如EUV光)之光源波長之波長)之檢查光之上述ABI裝置的缺陷檢查裝置進行第1基準標記22及第2基準標記42之檢查。 又，對於尚未形成上述吸收體膜31之附多層反射膜之基板20(參照圖2、圖6(a)參照)，可進行包含上述第1基準標記22在內之附多層反射膜之基板20之缺陷檢查。藉此，可使藉由附多層反射膜之基板20之缺陷檢查所得之缺陷座標與以第2基準標記42為基準而獲得之第1基準標記22之座標一致，因此無須進行兩者之缺陷資訊間之座標轉換而較為有利。 其次，對上述第1及第2基準標記22、42進行說明。 圖3係表示第1基準標記22之形狀之圖，圖4係表示第2基準標記42之形狀之圖，又，圖5係用以對使用第2基準標記42之決定基準點之方法進行說明的圖。 於上述實施形態中，作為一例，於反射型光罩基底30之角隅附近之4個部位形成有對準區域32。而且，上述第1基準標記22係形成於對準區域32內之多層反射膜21上。較佳為第1基準標記22均形成於與反射型光罩基底30主表面上之圖案形成區域對應的附多層反射膜之基板20主表面上之虛線A所示之區域(參照圖2)之邊界線上，或形成於較該區域更外側。但，若第1基準標記22過於接近基板外周緣，則可能與其他種類之識別標記交叉，因此欠佳。 上述第1基準標記22係成為缺陷資訊中之缺陷位置之基準者。而且，上述第1基準標記22較佳為點對稱之形狀。進而，例如於將以波長短於100 nm之短波長光作為缺陷檢查光的上述ABI裝置等用於缺陷檢查之情形時，較佳為第1基準標記22相對於缺陷檢查光之掃描方向具有30 nm以上且1000 nm以下之寬度的部分。 於圖3中，表示有第1基準標記22之若干形狀，如圖3(a)之圓形之基準標記為代表例。又，例如亦可為如圖3(b)所示之菱型、如圖3(c)所示之八邊形之形狀、或如圖3(d)所示之十字形狀。又，雖未圖示，但上述第1基準標記亦可設為正方形或正方形之角部帶弧度之形狀。再者，本發明並不限定於此種第1基準標記之實施形態。 上述第1基準標記22藉由具有點對稱之形狀，可使例如藉由缺陷檢查光之掃描而決定之缺陷位置之基準點之偏移變小，從而可使基於第1基準標記22而檢查出之缺陷檢測位置之偏差變小。 於圖4中，表示有第2基準標記42之若干形狀，如圖4(a)之十字形之基準標記為代表例。又，例如亦可設為如圖4(b)所示之L字形狀、或如圖4(c)所示般於主標記42a之周圍配置4個輔助標記42b～42e者、或如圖4(d)所示般於主標記42a之周圍配置2個輔助標記42b、42c的基準標記。再者，本發明並不限定於此種第2基準標記之實施形態。 又，圖4(a)之十字形狀或圖4(b)之L字形狀、如圖4(c)或圖4(d)般配置於上述主標記42a之周圍之輔助標記42b～42e(42b、42c)較佳為沿缺陷檢查光或電子束描繪裝置之掃描方向而配置，尤其較佳為包含具有相對於缺陷檢查光或電子束描繪裝置之掃描方向垂直之長邊與相對於其平行之短邊之矩形狀(例如參照圖5)。藉由使第2基準標記包含具有相對於缺陷檢查光或電子束之掃描方向垂直之長邊與相對於其平行之短邊之矩形狀，而可藉由缺陷檢查裝置或電子束描繪裝置之掃描而確實地檢測第2基準標記，因此可容易地特定出第2基準標記相對於第1基準標記之位置。於該情形時，第2基準標記之長邊較理想為可藉由缺陷檢查裝置或電子束描繪裝置之儘可能最小次數之掃描而檢測的長度，於將上述ABI裝置等用於缺陷檢查之情形時，例如較理想為具有100 μm以上且1500 μm以下之長度。 又，於本實施形態中，上述第1、第2基準標記22、42例如係以利用微小壓頭之壓痕(沖孔)或以聚焦離子束於多層反射膜21或吸收體膜31形成具有所期望之深度之凹形狀(截面形狀)。然而，第1、第2基準標記22、42之截面形狀並不限定於凹形狀，亦可為凸形狀，只要為可藉由缺陷檢查裝置或電子束描繪裝置而精度良好地檢測之截面形狀即可。 關於參照圖3～圖5之第1、第2基準標記22、42之上述說明亦適用於下述第2、第3實施形態。 於上述實施形態中，對在上述對準區域32內形成有成為缺陷資訊之基準之第1基準標記22之情形進行了說明，但成為缺陷資訊之基準者不限定於基準標記。若於上述對準區域32內存在可藉由缺陷檢查裝置之檢查光而對準之實際缺陷，則於檢查對準區域32時，可檢查以第2基準標記42為基準之實際缺陷之座標。於該實施形態之情形時，對附多層反射膜之基板20進行缺陷檢查，若於圖案形成區域之外周緣區域檢測到實際缺陷，則於形成吸收體膜31後，將多層反射膜21上之包含實際缺陷之區域形成為對準區域32即可。 如上所述，先前即便欲使用可檢查微細缺陷之例如如上述ABI裝置般之缺陷檢查裝置進行高精度之缺陷檢查，由於吸收體膜上之EUV光之反射率較低，因此缺陷之信號強度較小，難以獲取例如包含吸收體膜中之缺陷位置資訊之精度良好之缺陷資訊。 與此相對，如以上說明所述，本發明之第1實施形態之反射型光罩基底於圖案形成區域之外周緣區域，形成有使包含形成於多層反射膜上之成為缺陷資訊之基準之例如上述第1基準標記22之區域之多層反射膜21露出的對準區域32。因此，反射型光罩基底之缺陷管理若使用該對準區域32、更具體而言、例如使用形成於該對準區域32內之上述第1基準標記22進行對準，則可進行反射型光罩基底之高精度之缺陷管理。 [第1實施形態之反射型光罩基底之製造方法] 其次，對上述本發明之第1實施形態之反射型光罩基底之製造方法進行說明。 如上述構成1所記載般，本發明之第1實施形態之反射型光罩基底之製造方法之特徵在於：其係至少於基板上形成有反射EUV光之多層反射膜，且於該多層反射膜上形成有吸收EUV光之吸收體膜的反射型光罩基底之製造方法，且包含如下步驟：於上述基板上成膜上述多層反射膜而形成附多層反射膜之基板；對上述附多層反射膜之基板進行缺陷檢查；於上述附多層反射膜之基板之上述多層反射膜上成膜上述吸收體膜；形成反射型光罩基底，該反射型光罩基底係於圖案形成區域之外周緣區域形成有去除上述吸收體膜而使包含成為上述多層反射膜上之缺陷資訊之基準者之區域之上述多層反射膜露出的對準區域；及使用上述對準區域進行上述反射型光罩基底之缺陷管理。 圖6係表示本發明之第1實施形態之反射型光罩基底及反射型光罩之製造步驟之剖視圖。以下，根據圖6所示之步驟進行說明。 首先，於玻璃基板10上，成膜反射曝光之光之例如EUV光之多層反射膜21，製作附多層反射膜之基板20(參照圖6(a))。 於EUV曝光用之情形時，作為基板較佳為玻璃基板10，尤其，為了防止因曝光時之熱產生之圖案之變形，宜使用具有0±1.0×10-7 /℃之範圍內、更佳為0±0.3×10-7 /℃之範圍內之低熱膨脹係數者。作為具有該範圍之低熱膨脹係數之素材，例如可使用SiO2 -TiO2 系玻璃、多成分系玻璃陶瓷等。 自至少提昇圖案轉印精度、位置精度之觀點而言，上述玻璃基板10之欲形成轉印圖案之側之主表面以成為高平坦度之方式進行表面加工。於EUV曝光用之情形時，於玻璃基板10之欲形成轉印圖案之側之主表面142 mm×142 mm之區域，較佳平坦度為0.1 μm以下，尤其較佳為0.05 μm以下。又，與欲形成轉印圖案之側為相反側之主表面係當設置於曝光裝置時被靜電吸附之面，且於142 mm×142 mm之區域，平坦度為0.1 μm以下，較佳為0.05 μm以下。 又，作為上述玻璃基板10，如上所述，宜使用SiO2 -TiO2 系玻璃等具有低熱膨脹係數之素材，但此種玻璃素材難以藉由精密研磨而實現就表面粗糙度而言例如以均方根粗糙度(Rq)計為0.1 nm以下之高平滑性。因此，為了降低玻璃基板10之表面粗糙度，或減少玻璃基板10表面之缺陷，亦可於玻璃基板10之表面形成基底層。作為此種基底層之材料，無須相對於曝光之光具有透光性，較佳為選擇於已對基底層表面進行精密研磨時獲得較高之平滑性，而使缺陷品質變得良好之材料。例如，Si或含有Si之矽化合物(例如SiO2 、SiON等)由於當經過精密研磨時獲得較高之平滑性，而使缺陷品質變得良好，因此較佳用作基底層之材料。基底層之材料尤其較佳為Si。 基底層之表面較佳為設為以成為作為反射型光罩基底用基板而要求之平滑度之方式進行精密研磨之表面。基底層之表面較理想為以成為以均方根粗糙度(Rq)計為0.15 nm以下、尤其較佳為0.1 nm以下之方式進行精密研磨。又，考慮到對形成於基底層上之多層反射膜21表面的影響，較理想為基底層之表面以成為就與最大高度(Rmax)之關係而言，Rmax/Rq較佳為2～10，尤其較佳為2～8之方式進行精密研磨。 基底層之膜厚較佳為例如10 nm～300 nm之範圍。 上述多層反射膜21為交替地積層低折射率層與高折射率層而成之多層膜，通常，使用交替地積層40～60週期左右的重元素或其化合物之薄膜與輕元素或其化合物之薄膜而成之多層膜。 例如，作為對於波長13～14 nm之EUV光之多層反射膜，宜使用交替地積層40週期左右的Mo膜與Si膜而成之Mo/Si週期積層膜。除此以外，作為EUV光之區域所使用之多層反射膜，有Ru/Si週期多層膜、Mo/Be週期多層膜、Mo化合物/Si化合物週期多層膜、Si/Nb週期多層膜、Si/Mo/Ru週期多層膜、Si/Mo/Ru/Mo週期多層膜、Si/Ru/Mo/Ru週期多層膜等。根據曝光波長而適當選擇材質即可。 通常，於吸收體膜之圖案化或圖案修正時，為了保護多層反射膜，較佳為於上述多層反射膜21上設置保護膜(有時亦稱為封蓋層或緩衝膜)。作為此種保護膜之材料，除使用矽以外、還使用釕、或含有釕及鈮、鋯、銠中之1種以上元素之釕化合物，除此以外，亦存在使用鉻系材料之情況。 又，作為保護膜之膜厚，較佳為例如1 nm～5 nm左右之範圍。 以上之基底層、多層反射膜21、及保護膜之成膜方法並無特別限定，通常較佳為離子束濺鍍法或、磁控濺鍍法等。 再者，以下，作為上述附多層反射膜之基板20之一實施形態，如上所述，對如圖6(a)所示之於玻璃基板10上成膜多層反射膜21者進行說明。然而，於本發明中，附多層反射膜之基板設為包含於玻璃基板10上依序成膜上述多層反射膜21、及保護膜之態樣、或於玻璃基板10上依序成膜上述基底層、多層反射膜21、及保護膜之態樣。 其次，於如上所述般製作之附多層反射膜之基板20形成上述第1基準標記22。如上文說明，形成於該附多層反射膜之基板20之第1基準標記22係形成於由該附多層反射膜之基板製作之反射型光罩基底之對準區域內。由於已對第1基準標記22進行了詳細說明，因此此處省略重複說明。 此處，於附多層反射膜之基板20之多層反射膜21上之特定位置，使用例如利用微小壓頭之壓痕(沖孔)，形成如例如上述圖3(a)所示之形狀之第1基準標記22(參照圖6(a))。 形成上述第1基準標記22之方法並不限定於使用上述微小壓頭之方法。例如於基準標記之截面形狀為凹形狀之情形時，可藉由利用聚焦離子束、光微影法、雷射光之凹部形成、掃描金剛石針而產生之加工痕、利用壓印法之壓紋等而形成。 再者，於基準標記之截面形狀為凹形狀之情形時，自提昇缺陷檢查光之檢測精度之觀點而言，較佳為以自凹形狀之底部朝向表面側而變寬之方式形成之截面形狀。 又，如上所述，上述第1基準標記22較佳為形成於附多層反射膜之基板20之主表面上之圖案形成區域之邊界線上、或較圖案形成區域更外側之任意位置(參照圖1、圖2)。於該情形時，亦可以邊緣為基準形成基準標記，或於形成基準標記後，以座標測量器特定出基準標記形成位置。 例如，於以聚焦離子束(FIB)加工第1基準標記22之情形時，附多層反射膜之基板之邊緣可藉由2次電子像、2次離子像、或光學像而識別。又，於以其他方法(例如壓痕)加工基準標記之情形時，可藉由光學像進行識別。例如確認附多層反射膜之基板之四邊之8個部位之邊緣座標，進行傾斜修正，從而進行原點(0，0)定位。該情形時之原點可任意設定，可為基板之角部或中心。於距如此以邊緣為基準設定之原點之特定位置，以FIB形成基準標記。 當以缺陷檢查裝置檢測此種以邊緣為基準形成之基準標記時，由於已知基準標記之形成位置資訊、即距邊緣之距離，因此可容易地特定出基準標記形成位置。 又，亦可應用當於多層反射膜21上之任意位置形成第1基準標記22後，以座標測量器特定出基準標記形成位置之方法。該座標測量器為以邊緣為基準測量基準標記之形成座標者，例如可使用高精度圖案位置測定裝置(KLA-Tencor公司製造之LMS-IPRO4)，所特定之基準標記形成座標成為基準標記之形成位置資訊。 其次，對如上所述般製作之形成有第1基準標記22之附多層反射膜之基板20進行缺陷檢查。即，對於附多層反射膜之基板20，藉由缺陷檢查裝置，進行包含上述第1基準標記22在內之缺陷檢查，獲取藉由缺陷檢查而檢測之缺陷與位置資訊，獲得包含第1基準標記22在內之缺陷資訊。又，該情形時之缺陷檢查係對至少圖案形成區域之整面進行。 其次，對上述附多層反射膜之基板20中之上述多層反射膜21(於在多層反射膜之表面包含上述保護膜之情形時為該保護膜)上之整面，成膜吸收EUV光之吸收體膜31，製作反射型光罩基底(參照圖6(b))。 再者，雖未圖示，亦可於玻璃基板10之與形成有多層反射膜等之側為相反側之側設置背面導電膜。 上述吸收體膜31具有吸收作為曝光之光之例如EUV光之功能，且於使用反射型光罩基底而製作之反射型光罩40(參照圖6(d))中，上述多層反射膜21(於在多層反射膜之表面包含上述保護膜之情形時為該保護膜)所產生之反射光與吸收體膜圖案31a所產生之反射光之間具有所期望之反射率差即可。例如，吸收體膜31對於EUV光之反射率係於0.1%以上且40%以下之間選定。又，除上述反射率差以外，亦可為上述多層反射膜21(於在多層反射膜之表面包含上述保護膜之情形時為該保護膜)所產生之反射光與吸收體膜圖案31a所產生之反射光之間具有所期望之相位差。再者，於上述多層反射膜21(於在多層反射膜之表面包含上述保護膜之情形時為該保護膜)所產生之反射光與吸收體膜圖案31a所產生之反射光之間具有所期望之相位差之情形時，存在將反射型光罩基底中之吸收體膜31稱為相位偏移膜之情形。於在上述多層反射膜21(於在多層反射膜之表面包含上述保護膜之情形時為該保護膜)所產生之反射光與吸收體膜圖案31a所產生之反射光之間設置所期望之相位差而提昇對比度之情形時，較佳為相位差係設定為180度±10度之範圍，吸收體膜31之反射率較佳為係設定為3%以上且40%以下。 上述吸收體膜31可為單層亦可為積層構造。於積層構造之情形時，可為同一材料之積層膜，亦可為不同種類材料之積層膜。積層膜可設為材料或組成於膜厚方向上階段性地及/或連續地變化者。 作為上述吸收體膜31之材料，例如宜使用鉭(Ta)單體或包含Ta之材料。作為含有Ta之材料，使用包含Ta及B之材料、包含Ta及N之材料、包含Ta及B且進而包含O及N之至少一者之材料、包含Ta及Si之材料、包含Ta、Si及N之材料、包含Ta及Ge之材料、包含Ta、Ge及N之材料、包含Ta及Pd之材料、包含Ta及Ru之材料等。又，作為Ta以外之材料，亦可為Cr單體或含有Cr之材料、Ru單體或含有Ru之材料、Pd單體或含有Pd之材料、Mo單體或含有Mo之材料。於吸收體膜31為積層膜之情形時，可設為組合上述材料而成之積層構造。 作為上述吸收體膜31之膜厚，例如較佳為30 nm～100 nm左右之範圍。吸收體膜31之成膜方法並無特別限定，通常較佳為磁控濺鍍法、或離子束濺鍍法等。 其次，於上述反射型光罩基底之表面之特定部位，具體而言，於包含形成於上述附多層反射膜之基板20之上述第1基準標記22之區域，去除吸收體膜31而形成對準區域32(參照圖6(c))。該對準區域32係形成為使包含形成於多層反射膜21上之上述第1基準標記22之區域之多層反射膜21露出的形狀、大小。又，於吸收體膜31之上部之上述第1基準標記22附近形成第2基準標記42(參照圖6(c))。 作為為了形成該對準區域32及第2基準標記42而去除與該區域相當之吸收體膜31之方法，例如較佳為應用光微影法。具體而言，於吸收體膜31上，形成特定之抗蝕圖案(於與對準區域及第2基準標記對應之區域未形成抗蝕劑之圖案)，以該抗蝕圖案為遮罩，對與對準區域及第2基準標記對應之吸收體膜進行乾式蝕刻，去除與該區域相當之吸收體膜31而形成對準區域32及第2基準標記42。作為該情形時之蝕刻氣體，使用與吸收體膜31之圖案化時所使用者相同之蝕刻氣體即可。 如此，製作反射型光罩基底30，該反射型光罩基底30於圖案形成區域之外周緣區域，形成有去除上述吸收體膜31而使包含上述第1基準標記22之區域之多層反射膜21露出之對準區域32、及第2基準標記42(參照圖6(c))。 其次，對於如上所述般製作之包含第1基準標記22之對準區域32及第2基準標記42，使用與進行上述多層反射膜上之缺陷檢查之檢查裝置相同之檢查光進行檢查。 於該情形時，以上述第2基準標記42為基準，檢查形成於上述對準區域32內之上述第1基準標記22，檢測以第2基準標記42為基準之第1基準標記22之位置座標。其後，基於藉由上述缺陷檢查所得之附多層反射膜之基板20之缺陷資訊，製作以上述第1基準標記22為基準之缺陷資訊(第1缺陷圖)。繼而，使用以上述第2基準標記42為基準之第1基準標記22之座標，將上述缺陷資訊(第1缺陷圖)轉換為以第2基準標記為基準之缺陷資訊(第2缺陷圖)。該第1基準標記22與第2基準標記42較佳為使用如上述ABI裝置般可高精度地檢測微細缺陷之缺陷檢查裝置進行檢查。 於此種本實施形態之反射型光罩基底30中，於圖案形成區域之外周緣區域，形成有使包含上述第1基準標記22之區域之多層反射膜21露出之對準區域32，因此可使用該對準區域32進行反射型光罩基底30之缺陷管理。即，可使用該對準區域32，進行上述第1基準標記22與第2基準標記42之相對座標之管理，其結果為，可根據以上述第1基準標記22為基準之缺陷資訊(第1缺陷圖)，獲得以上述第2基準標記42為基準之缺陷資訊(第2缺陷圖)。由於吸收體膜31係形成於多層反射膜21上，因此多層反射膜21之缺陷亦反映於吸收體膜31，故而可經由對準區域32而以上述第2基準標記42為基準高精度地管理多層反射膜21上之缺陷。於進行反射型光罩基底30之缺陷管理之情形時，尤其藉由使用上述ABI裝置，即便為微細缺陷亦可高精度地進行檢測，而且可獲得精度良好之缺陷資訊。 又，對於反射型光罩基底30表面之缺陷檢查，亦可不進行，為了進行更高精度之缺陷管理，亦可進行整面檢查或縮短檢查時間之部分檢查。 於上述實施形態中，對在上述對準區域32內形成有成為缺陷資訊之基準之第1基準標記22之反射型光罩基底進行了說明。然而，如上文說明，若於上述對準區域32內存在可藉由缺陷檢查裝置之檢查光進行對準之實際缺陷，則於檢查對準區域32時，可檢查以第2基準標記42為基準之實際缺陷之座標。 如以上說明所述，藉由本發明之第1實施形態之製造方法而獲得之反射型光罩基底30於圖案形成區域之外周緣區域，形成有使包含例如上述第1基準標記22之區域之多層反射膜露出之對準區域32。因此，反射型光罩基底30之缺陷管理可使用該對準區域32、具體而言、使用形成於該對準區域32內之例如上述第1基準標記22而進行高精度之缺陷管理，其結果為可獲取包含缺陷位置資訊之精度良好之缺陷資訊。 又，於本發明之第1實施形態之反射型光罩基底30中，亦包含於上述吸收體膜31上形成有硬質遮罩膜(亦稱為蝕刻遮罩膜)之態樣。硬質遮罩膜係於對吸收體膜31進行圖案化時具有遮罩功能者，包含與吸收體膜31之最上層之材料蝕刻選擇性不同之材料。例如，於吸收體膜31為Ta單體或包含Ta之材料之情形時，硬質遮罩膜可使用鉻或鉻化合物、或者矽或矽化合物等材料。作為鉻化合物，可列舉包含Cr及選自N、O、C、H之至少一種元素之材料。作為矽化合物，可列舉包含Si及選自N、O、C、H之至少一種元素之材料、或者矽或矽化合物中包含金屬之金屬矽(金屬矽化物)或金屬矽化合物(金屬矽化物化合物)等材料。作為金屬矽化合物，可列舉包含金屬、Si及選自N、O、C、H之至少一種元素之材料。又，於吸收體膜31為自多層反射膜21側起為包含Ta之材料、包含Cr之材料之積層膜之情形時，硬質遮罩膜之材料可選擇與包含Cr之材料蝕刻選擇性不同之矽、矽化合物、金屬矽化物、金屬矽化物化合物等。 又，本發明之第1實施形態之反射型光罩基底30亦可設為如下構成：以包含蝕刻選擇性互不相同之材料之最上層及除其以外之層的積層膜構成吸收體膜，且使最上層具有作為對於除其以外之層的硬質遮罩膜之功能。 如上所述，本發明之第1實施形態之反射型光罩基底30中之吸收體膜31並不限定於單層膜，可藉由同一材料之積層膜、不同種類材料之積層膜而構成，進而，可設為如上所述之積層膜或單層膜之吸收體膜與硬質遮罩膜之積層膜之構成。 又，於本發明之第1實施形態之反射型光罩基底30中，亦包含於上述吸收體膜31上形成有抗蝕膜之態樣。此種抗蝕膜係於藉由光微影法對反射型光罩基底中之吸收體膜進行圖案化時使用。 又，於在吸收體膜31上介隔或不介隔上述硬質遮罩膜而設置有抗蝕膜之情形時，第2基準標記42之形狀會被轉印至抗蝕膜。而且，轉印至抗蝕膜之第2基準標記42相對於電子束描繪裝置之電子束掃描具有對比度，可藉由電子束檢測。此時，由於藉由第1基準標記22與第2基準標記42進行相對座標之管理，因此即便不將較第2基準標記42相對較小之第1基準標記22之形狀轉印至抗蝕膜亦可進行高精度之描繪。 再者，為了進一步提昇相對於電子束掃描之對比度，亦可設為於包含第2基準標記42之區域之上不形成抗蝕膜、或去除包含第2基準標記42之區域之上之抗蝕膜的構成。 [第1實施形態之反射型光罩] 本發明亦提供上述構成之反射型光罩基底中之上述吸收體膜經圖案化之反射型光罩及其製造方法。 即，藉由於上述反射型光罩基底30上塗佈電子束描繪用抗蝕劑並進行烘焙而形成抗蝕膜，使用電子束描繪裝置對抗蝕膜進行描繪、顯影，於抗蝕膜形成與轉印圖案對應之抗蝕圖案。其後，以抗蝕圖案為遮罩將吸收體膜31圖案化而形成吸收體膜圖案31a，藉此製作反射型光罩40(參照圖6(d))。 對反射型光罩基底30中之成為轉印圖案之上述吸收體膜31進行圖案化之方法最佳為光微影法。再者，於使用包含上述硬質遮罩膜之構成之反射型光罩基底製造反射型光罩之情形時，亦可最終去除硬質遮罩膜，但若即便殘留硬質遮罩膜亦不會對作為反射型光罩之功能產生影響，則亦可不特意去除。 上述反射型光罩40至少於基板10上形成有反射EUV光之多層反射膜21，於該多層反射膜21上形成有吸收EUV光之吸收體膜圖案31a。而且，於該反射型光罩40主表面上之圖案形成區域之外周緣區域，形成有使包含成為多層反射膜21上之缺陷資訊之基準者之區域之上述多層反射膜21露出的對準區域32。又，於對準區域32附近之吸收體膜31上，形成有成為第1基準標記22之基準並且用以於光罩製造中之電子束描繪步驟中進行對準的第2基準標記42。第2基準標記42較第1基準標記22形成為相對較大。 基於以上述第2基準標記42為基準之缺陷資訊，以第2基準標記42為基準，對吸收體膜31進行圖案化。 於本發明中，如上所述，可獲取包含多層反射膜中之缺陷位置資訊之精度良好之缺陷資訊，從而高精度地進行反射型光罩基底之缺陷管理。因此，於光罩之製造中，可基於該缺陷資訊，與預先設計之描繪資料(光罩圖案資料)進行對照，以減少缺陷造成之影響之方式對描繪資料以高精度進行修正(校正)，其結果為，可獲得於最終製造之反射型光罩中減少缺陷者。 進而，藉由使用上述本發明之反射型光罩將轉印圖案曝光轉印至半導體基板上之抗蝕膜，而可製造缺陷較少之高品質之半導體裝置。 [實施例] 以下，藉由實施例，對本發明之實施形態進一步具體進行說明。 (實施例1) 準備如下SiO2 -TiO2 系之玻璃基板(大小約152.0 mm×約152.0 mm，厚度約6.35 mm)，其係使用雙面研磨裝置，藉由氧化鈰研磨粒或膠體氧化矽研磨粒而階段性地進行研磨，且利用低濃度之矽氟酸對基板表面進行表面處理者。所得之玻璃基板之表面粗糙度以均方根粗糙度(Rq)計為0.25 nm。再者，表面粗糙度係藉由原子力顯微鏡(AFM)進行測定，測定區域設為1 μm×1 μm。 其次，使用離子束濺鍍裝置，以Si膜(膜厚：4.2 nm)與Mo膜(膜厚：2.8 nm)為一週期，於玻璃基板之主表面積層40週期，最後形成Si膜(膜厚：4 nm)，進而於其上成膜包含Ru之保護膜(膜厚：2.5 nm)，獲得附多層反射膜之基板。 其次，於上述附多層反射膜之基板之多層反射膜表面之特定部位，按以下之表面形狀形成截面形狀為凹形狀之第1基準標記。第1基準標記之形成係藉由利用微小壓頭之壓痕(沖孔)進行。具體而言，藉由以特定壓力將微小壓頭壓抵於多層反射膜，而形成第1基準標記。於形成第1基準標記後，進行洗淨。 於本實施例中，作為第1基準標記，設為上述圖3(a)所示之形狀，大小設為直徑500 nm之圓形，深度設為60 nm。 其次，對於附多層反射膜之基板表面，藉由上述ABI裝置進行包含上述第1基準標記在內之缺陷檢查。於該缺陷檢查中，獲取凸部、凹部之缺陷位置資訊、及缺陷尺寸資訊，獲得包含第1基準標記在內之缺陷資訊。 又，藉由EUV反射率計對該附多層反射膜之基板之保護膜表面之反射率進行評價，結果為64%±0.2%，良好。 其次，使用DC(Direct Current，直流)磁控濺鍍裝置，於上述附多層反射膜之基板之保護膜上，形成包含TaBN膜(膜厚：56 nm)與TaBO膜(膜厚：14 nm)之積層膜之吸收體膜，又，於附多層反射膜之基板之背面形成CrN導電膜(膜厚：20 nm)而獲得反射型光罩基底。 其次，於上述反射型光罩基底之表面之特定部位，形成已去除吸收體膜之對準區域與第2基準標記。又，對準區域係形成為使包含形成於多層反射膜之上述第1基準標記之區域之多層反射膜露出的形狀、大小。作為第2基準標記，形成上述圖4(a)所示之十字形狀。第2基準標記係大小為寬度5 μm且長度550 μm之十字形狀，且由於將吸收體膜全部去除，因此深度設為約70 nm。 為了去除對準區域之吸收體膜，並且形成上述第2基準標記，而應用光微影法。具體而言，於成膜有吸收體膜之反射型光罩基底上，藉由旋轉塗佈法而塗佈電子束描繪用抗蝕劑，進行烘焙而形成抗蝕膜。於吸收體膜上，形成與除對準區域及第2基準標記以外之區域對應之特定之抗蝕圖案，以該抗蝕圖案為遮罩，對於露出之吸收體膜，藉由氟系氣體(CF4 氣體)而將TaBO膜蝕刻去除，藉由氯系氣體(Cl2 氣體)而將TaBN膜蝕刻去除，形成對準區域及第2基準標記。進而，利用熱硫酸去除殘留於吸收體膜上之抗蝕圖案，獲得形成有對準區域及第2基準標記之反射型光罩基底。 對於所得之反射型光罩基底，藉由與附多層反射膜之基板之缺陷檢查相同之上述ABI裝置進行對準區域內之第1基準標記與第2基準標記之檢查。此時，以第2基準標記為基準檢查第1基準標記，並檢測以第2基準標記為基準之第1基準標記之位置座標。藉由進行第2基準標記與第1基準標記之相對座標之管理，而可以第2基準標記為基準，高精度地管理多層反射膜上之缺陷。 如此，獲得以第2基準標記為基準之反射型光罩基底之缺陷資訊。 進而，藉由以座標測定器(KLA-Tencor公司製造之LMS-IPRO4)測量第2基準標記，而進行轉換為電子束描繪步驟之基準座標之校正。 其次，使用已獲取該缺陷資訊之EUV反射型光罩基底，製作EUV反射型光罩。 首先，藉由旋轉塗佈法而於EUV反射型光罩基底上塗佈電子束描繪用抗蝕劑，進行烘焙而形成抗蝕膜。 此時，基於第2基準標記進行對準。然後，基於EUV反射型光罩基底之缺陷資訊，與預先設計之光罩圖案資料進行對照，修正為對使用曝光裝置之圖案轉印不存在影響之光罩圖案資料，或於判斷為對圖案轉印存在影響之情形時，例如修正為以將缺陷隱藏於圖案之下之方式追加修正圖案資料的光罩圖案資料等，對上述抗蝕膜，藉由電子束而描繪光罩圖案並使其顯影，形成抗蝕圖案。於本實施例中，由於獲得了包含精度較高之缺陷位置資訊之缺陷資訊，因此可高精度地進行光罩圖案資料之修正。 以該抗蝕圖案為遮罩，對於吸收體膜，藉由氟系氣體(CF4 氣體)而將TaBO膜蝕刻去除，藉由氯系氣體(Cl2 氣體)而將TaBN膜蝕刻去除，於保護膜上形成吸收體膜圖案。 進而，利用熱硫酸去除殘留於吸收體膜圖案上之抗蝕圖案，獲得EUV反射型光罩。 將如此獲得之反射型光罩設置於曝光裝置，對形成有抗蝕膜之半導體基板上進行圖案轉印，結果為，不存在因反射型光罩產生之轉印圖案之缺陷，可進行良好之圖案轉印。 (參考例1) 於上述實施例1中，於形成有第1基準標記之附多層反射膜之基板上形成上述吸收體膜後，不形成上述對準區域，除此以外，與實施例1同樣地製作反射型光罩基底。 與實施例1同樣地，以ABI裝置進行附多層反射膜之基板之缺陷檢查，獲取缺陷位置資訊、缺陷尺寸資訊。又，對於形成有第1基準標記之吸收體膜上之區域以ABI裝置進行檢查之結果為：形成於多層反射膜之第1基準標記係EUV光下之對比度較低，無法精度良好地檢測，因此獲取之缺陷座標之精度較差，難以獲得反射型光罩基底之缺陷資訊。 其次，與實施例1同樣地，使用該EUV反射型光罩基底，製作EUV反射型光罩。 將所得之EUV反射型光罩設置於曝光裝置，對形成有抗蝕膜之半導體基板上進行圖案轉印，結果觀察到因反射型光罩產生之轉印圖案缺陷。認為其原因在於：如上所述，第1基準標記之缺陷座標之精度較差，難以獲得反射型光罩基底之缺陷資訊，因此於圖案描繪步驟中，無法以高精度進行基於EUV反射型光罩基底之缺陷資訊的光罩圖案資料之修正，從而無法將多層反射膜上之缺陷精度良好地隱藏於吸收體膜圖案下。 再者，於上述實施例1中，列舉藉由利用微小壓頭之壓痕而形成第1基準標記之例進行了說明，但並不限定於此。如上文亦說明般，除該方法以外，亦可藉由利用聚焦離子束、光微影法、雷射光等之凹部形成、掃描金剛石針而產生之加工痕、利用壓印法之壓紋等而形成。又，於上述實施例1中，列舉於對準區域形成有第1基準標記之例進行了說明，但亦可代替第1基準標記而形成偽缺陷。又，亦可為存在於對準區域之實際缺陷。 其次，對本發明之第2實施形態進行詳細敍述。 [第2實施形態之反射型光罩基底] 圖7係表示本發明之第2實施形態之反射型光罩基底之俯視圖。又，圖8係構成圖7所示之反射型光罩基底之附多層反射膜之基板之俯視圖。進而，圖10係表示本發明之第2實施形態之反射型光罩基底及反射型光罩之製造步驟之概略剖視圖。再者，於以下之說明中，存在對與於第1實施形態中說明之構成要素相同之構成要素標註相同之參照編號而省略詳細說明的情形。 如圖7、圖10所示，本發明之第2實施形態之反射型光罩基底30'至少於基板10上形成有反射作為曝光之光之EUV光之多層反射膜21，且於該多層反射膜21上又形成有吸收EUV光之吸收體膜31(參照圖10(c))，於該反射型光罩基底30'主表面上之圖案形成區域(圖7中虛線所示之區域A內)之外周緣區域，形成有複數個對準區域32'。圖案形成區域係吸收體膜31上之欲形成轉印圖案之區域，且係6英吋見方(約152.0 mm×約152.0 mm)之基板上之例如132 mm×132 mm之區域。上述對準區域32'係使包含成為上述多層反射膜21上之缺陷資訊之基準之第1基準標記22之區域之多層反射膜21露出的區域。於本實施形態中，上述第1基準標記22係形成於上述多層反射膜21。又，於上述對準區域32'之圖案形成區域側附近之吸收體膜31，形成有成為上述第1基準標記22之基準並且用以於光罩製造中之電子束描繪步驟中進行對準的第2基準標記42。該第2基準標記42較理想為較第1基準標記22形成為相對較大。即，較佳為第2基準標記42之寬度或長度大於第1基準標記22之寬度或長度，及/或第2基準標記42之截面形狀中之深度或高度大於第1基準標記22之截面形狀中之深度或高度。 又，於本實施形態中，作為一例，上述對準區域32'及第2基準標記42係形成於反射型光罩基底30'之圖案形成區域之外周緣區域、具體而言為反射型光罩基底30'之角隅附近之4個部位，但只要為圖案形成區域之外周緣區域即可，並不限定於角隅附近。於本實施形態中，對準區域32'係使包含形成於上述多層反射膜21上之第1基準標記22之區域之多層反射膜21露出的區域。因此，形成有對準區域32'之位置或個數根據形成於多層反射膜21之上述第1基準標記22之位置或個數而不同。再者，與第1實施形態同樣地，第1及第2基準標記之個數並無特別限定。關於第1及第2基準標記，最少需要3個，亦可如本實施形態般為3個以上。 又，上述對準區域32'只要至少使包含形成於多層反射膜21之上述第1基準標記22之區域露出，且可藉由於進行附多層反射膜之基板20'之缺陷檢查時使用之缺陷檢查裝置而檢測上述第1基準標記22即可，於該條件下，上述對準區域32'之形狀或大小等無須特別制約。但，於在上述多層反射膜21上成膜上述吸收體膜31而設為反射型光罩基底時，以於對準區域32'不成膜吸收體膜31而使多層反射膜21露出之方式，例如設置遮蔽構件而成膜吸收體膜31，藉此形成上述對準區域32'。因此，較佳為於反射型光罩基底之圖案形成區域之外周緣區域、尤其是於包含基板外周緣之區域形成上述對準區域32'。 例如於本實施形態中，如圖7所示，對準區域32'係設為於反射型光罩基底30'之角隅之4個部位分別包含角隅之兩邊的三角形狀。該三角形狀之外周部之橫向之長度L3 例如可設為6.0 mm～18.0 mm，縱向之長度L4 例如可設為6.0 mm～18.0 mm。 於此種本實施形態之反射型光罩基底30'中，於圖案形成區域之外周緣區域，形成有未成膜吸收體膜31而使包含形成於多層反射膜21之第1基準標記22之區域之多層反射膜21露出的對準區域32'。又，如上所述，於該對準區域32'之圖案形成區域側附近之吸收體膜31形成有成為上述第1基準標記22之基準並且用以於光罩製造中之電子束描繪步驟中進行對準的第2基準標記42。因此，可使用該對準區域32'進行反射型光罩基底30'之缺陷管理。即，可使用形成於該對準區域32'內之上述第1基準標記22，進行上述第1基準標記22與上述第2基準標記42之相對座標之管理。其結果為，可根據以上述第1基準標記22為基準之缺陷資訊(第1缺陷圖)，獲得以上述第2基準標記42為基準之缺陷資訊(第2缺陷圖)。 又，於使用上述ABI裝置進行反射型光罩基底30'之缺陷管理之情形時，由於該對準區域32'係使多層反射膜21露出，因此可高精度地檢測上述第1基準標記22。因此，可高精度地進行上述第1基準標記22與第2基準標記42之相對座標之管理，其結果為，可良好地進行以上述第2基準標記42為基準之反射型光罩基底30'之缺陷管理。本發明之第2實施形態之反射型光罩基底30'較佳為使用利用例如波長短於100 nm(接近曝光之光(例如EUV光)之光源波長之波長)之檢查光的如上述ABI裝置般之缺陷檢查裝置進行第1基準標記22及第2基準標記42之檢查。 又，可對於尚未形成上述吸收體膜31之附多層反射膜之基板20'(參照圖8、圖10(a))進行包含上述第1基準標記22在內之附多層反射膜之基板20'之缺陷檢查。藉此，可使以附多層反射膜之基板20'之缺陷檢查所得之缺陷座標與以第2基準標記42為基準而獲得之第1基準標記22之座標一致，因此無須進行兩者之缺陷資訊間之座標轉換，較為有利。 對於上述第1基準標記22及第2基準標記42，如第1實施形態中參照圖3～圖5所說明般，因此省略重複說明。 於第2實施形態中，作為一例，於反射型光罩基底30'之角隅之4個部位形成有對準區域32'。而且，上述第1基準標記22係形成於對準區域32'內之多層反射膜21。如上所述，對準區域32'較佳為形成於反射型光罩基底之圖案形成區域之外周緣區域、尤其是包含基板外周緣之區域。因此，對於形成於該對準區域32'內之多層反射膜21之上述第1基準標記22，亦較佳為形成於較與反射型光罩基底30'主表面上之圖案形成區域對應之附多層反射膜之基板20'主表面上之虛線A所示之區域(參照圖8)更外側。但，若第1基準標記22過於接近基板外周緣，則有可能與其他種類之識別標記交叉，因此欠佳。自此種觀點而言，上述第1基準標記22(或包含當該基準標記之對準區域32')較理想為於6英吋見方(約152.0 mm×約152.0 mm)之基板上，例如形成於134 mm×134 mm～146 mm×146 mm之區域內。 如第1實施形態中說明般，上述第1基準標記22係成為缺陷資訊中之缺陷位置之基準者。而且，上述第1基準標記22較佳為點對稱之形狀。進而，於將例如以波長短於100 nm之短波長光作為缺陷檢查光之上述ABI裝置等用於缺陷檢查之情形時，較佳為相對於該缺陷檢查光之掃描方向具有30 nm以上且1000 nm以下之寬度之部分。 於本實施形態中，於圖案形成區域之外周緣區域形成有使包含第1基準標記22之區域之多層反射膜21露出的對準區域32'。因此，於該對準區域32'之圖案形成區域側附近之吸收體膜31，形成有成為上述第1基準標記22之基準之第2基準標記42。於本實施形態中，作為具體之一例，第2基準標記42係形成於基板角隅附近且圖案形成區域之角隅之外側附近。然而，形成第2基準標記42之位置只要為對準區域32'之圖案形成區域側附近即可，並不限定於圖7之實施形態。例如，第2基準標記42與對準區域32'內之第1基準標記22為包含於以10 mm×10 mm包圍之區域內之位置關係即可。 於上述第2實施形態中，以對在上述對準區域32'內形成有成為缺陷資訊之基準之第1基準標記22之情形進行了說明，但若於上述對準區域32'內存在可藉由缺陷檢查裝置之檢查光對準之實際缺陷，則於檢查對準區域32'時，可檢測以第2基準標記42為基準之實際缺陷之座標。即，於第2實施形態中，上述第1基準標記22亦可設為存在於對準區域32'內之實際缺陷。於該實施形態之情形時，對附多層反射膜之基板進行缺陷檢查，若於圖案形成區域之外周緣區域檢測到實際缺陷，則於在多層反射膜21上形成吸收體膜31時，不於該多層反射膜21上之包含實際缺陷之區域成膜吸收體膜31，從而形成為對準區域32'即可。 如第1實施形態中亦說明般，先前，即便欲使用可檢測微細缺陷之例如如上述ABI裝置般之缺陷檢查裝置進行高精度之缺陷檢查，由於吸收體膜上之EUV光之反射率較低，因此缺陷之信號強度較小，亦難以獲取例如包含吸收體膜中之缺陷位置資訊之精度良好之缺陷資訊。 與此相對，本發明之第2實施形態之反射型光罩基底亦如以上說明般，於圖案形成區域之外周緣區域形成有使包含形成於多層反射膜上之成為缺陷資訊之基準之上述第1基準標記22之區域之多層反射膜露出的對準區域32'。因此，反射型光罩基底之缺陷管理若使用該對準區域32'、更具體而言例如使用形成於該對準區域32'內之上述第1基準標記22進行對準，則可進行反射型光罩基底之高精度之缺陷管理。例如，可使用形成於該對準區域32'內之上述第1基準標記22進行上述第1基準標記22與上述第2基準標記42之相對座標之管理，因此可根據以上述第1基準標記22為基準之缺陷資訊(第1缺陷圖)獲得以上述第2基準標記42為基準之缺陷資訊(第2缺陷圖)。 圖9係表示本發明之第3實施形態之反射型光罩基底之俯視圖。 於圖9所示之實施形態中，包含第1基準標記22之對準區域33係設為於基板之角隅之4個部位分別包含角隅之兩邊的矩形狀。該矩形狀之區域之橫向之長度例如可設為3.0 mm～9.0 mm，縱向之長度亦例如可設為3.0 mm～9.0 mm。 如上文說明，只要可藉由缺陷檢查裝置檢測上述第1基準標記22即可，於該條件下，上述對準區域33之形狀或大小等無須受上述實施形態制約。 而且，於本實施形態中，亦於該對準區域33之圖案形成區域側附近之吸收體膜31形成有成為上述第1基準標記22之基準之第2基準標記42。 關於除此以外之構成，與上述圖7之第2實施形態相同，因此省略重複說明。 於本實施形態中，亦可使用上述對準區域33進行反射型光罩基底30'之缺陷管理。即，可使用形成於該對準區域33內之上述第1基準標記22，進行上述第1基準標記22與上述第2基準標記42之相對座標之管理。其結果為，可根據以上述第1基準標記22為基準之缺陷資訊(第1缺陷圖)，獲得以上述第2基準標記42為基準之缺陷資訊(第2缺陷圖)。 又，於使用上述ABI裝置進行反射型光罩基底30'之缺陷管理之情形時，由於該對準區域33係使多層反射膜21露出，因此可高精度地檢測上述第1基準標記22。因此，可高精度地進行上述第1基準標記22與第2基準標記42之相對座標之管理，從而可良好地進行以上述第2基準標記42為基準之反射型光罩基底30'之缺陷管理。 [第2、第3實施形態之反射型光罩基底之製造方法] 其次，對上述本發明之第2實施形態之反射型光罩基底之製造方法進行說明。該說明亦可應用於第3實施形態。 本發明之第2實施形態之反射型光罩基底之製造方法係如上述構成14般， 其特徵在於：其係至少於基板上形成有反射EUV光之多層反射膜，且於該多層反射膜上形成有吸收EUV光之吸收體膜的反射型光罩基底之製造方法，且包含如下步驟： 於上述基板上成膜上述多層反射膜而形成附多層反射膜之基板； 對上述附多層反射膜之基板進行缺陷檢查；及 於上述附多層反射膜之基板之上述多層反射膜上，成膜上述吸收體膜而形成反射型光罩基底；且 上述吸收體膜之成膜係包含如下步驟：於圖案形成區域之外周緣區域，形成未成膜上述吸收體膜而使包含成為上述多層反射膜上之缺陷資訊之基準之第1基準標記之區域之上述多層反射膜露出的對準區域(以下，有時亦稱為「對準區域形成步驟」)；且 該製造方法進而包含如下步驟： 於上述吸收體膜中之上述對準區域之圖案形成區域側附近，形成成為上述第1基準標記之基準之第2基準標記；及 使用上述對準區域進行上述反射型光罩基底之缺陷管理。 圖10係表示本發明之第2實施形態之反射型光罩基底及反射型光罩之製造步驟之剖視圖。以下，根據圖10所示之步驟進行說明。 首先，作為基板，於玻璃基板10上成膜反射曝光之光之例如EUV光之多層反射膜21，製作附多層反射膜之基板20'(參照圖10(a))。 於EUV曝光用之情形時，作為基板，較佳為玻璃基板，特別地，為了防止因曝光時之熱產生之圖案之變形，與第1實施形態同樣地，宜使用具有0±1.0×10-7 /℃之範圍內、更佳為0±0.3×10-7 /℃之範圍內之低熱膨脹係數者。作為具有該範圍之低熱膨脹係數之素材，例如可使用SiO2 -TiO2 系玻璃、多成分系玻璃陶瓷等。 如第1實施形態所說明般，自至少提昇圖案轉印精度、位置精度之觀點而言，上述玻璃基板10之欲形成轉印圖案之側之主表面係以成為高平坦度之方式進行表面加工。於EUV曝光用之情形時，於玻璃基板10之欲形成轉印圖案之側之主表面之142 mm×142 mm之區域中，平坦度較佳為0.1 μm以下，尤其較佳為0.05 μm以下。又，與欲形成轉印圖案之側為相反側之主表面為設置於曝光裝置時被靜電吸附之面，於142 mm×142 mm之區域中，平坦度為0.1 μm以下，較佳為0.05 μm以下。 又，作為上述玻璃基板10，如上所述，宜使用SiO2 -TiO2 系玻璃等具有低熱膨脹係數之素材，但此種玻璃素材難以藉由精密研磨而實現就表面粗糙度而言例如以均方根粗糙度(Rq)計為0.1 nm以下之高平滑性。因此，為了降低玻璃基板10之表面粗糙度，或減少玻璃基板10表面之缺陷，而亦可於玻璃基板10之表面形成基底層。作為此種基底層之材料，無須相對於曝光之光具有透光性，較佳為選擇於已對基底層表面進行精密研磨時獲得較高之平滑性，而使缺陷品質變得良好之材料。例如，Si或含有Si之矽化合物(例如SiO2 、SiON等)由於當已進行精密研磨時獲得較高之平滑性，而使缺陷品質變得良好，因此宜用作基底層之材料。基底層之材料尤其較佳為Si。 基底層之表面較佳為設為以成為作為反射型光罩基底用基板而要求之平滑度之方式進行精密研磨之表面。基底層之表面較理想為以成為以均方根粗糙度(Rq)計為0.15 nm以下、尤其較佳為0.1 nm以下之方式進行精密研磨。又，考慮到對形成於基底層上之多層反射膜21之表面的影響，較理想為基底層之表面以成為就與最大高度(Rmax)之關係而言，較佳為Rmax/Rq為2～10，尤其較佳為2～8之方式進行精密研磨。 基底層之膜厚較佳為例如10 nm～300 nm之範圍。 如第1實施形態所說明般，上述多層反射膜21為交替地積層低折射率層與高折射率層而成之多層膜，通常，使用交替地積層40～60週期左右的重元素或其化合物之薄膜與輕元素或其化合物之薄膜而成之多層膜。多層反射膜21之具體例如第1實施形態中說明般，因此省略說明。 與第1實施形態同樣地，通常，於吸收體膜之圖案化或圖案修正時，為了保護多層反射膜，較佳為於上述多層反射膜21上設置保護膜(有時亦稱為封蓋層或緩衝膜)。作為此種保護膜之材料，除使用矽以外、還使用釕、或含有釕及鈮、鋯、銠中之1種以上元素之釕化合物，除此以外，亦存在使用鉻系材料之情況。又，作為保護膜之膜厚，較佳為例如1 nm～5 nm左右之範圍。 如第1實施形態所說明般，以上之基底層、多層反射膜21、及保護膜之成膜方法並無特別限定，通常較佳為離子束濺鍍法或、磁控濺鍍法等。 以下，作為上述附多層反射膜之基板20'之實施形態，如上所述，對如圖10(a)所示之玻璃基板10上成膜多層反射膜21者進行說明，於本實施形態中，附多層反射膜之基板20'亦設為包含於玻璃基板10上依序成膜上述多層反射膜21、及保護膜之態樣、或於玻璃基板10上依序成膜上述基底層、多層反射膜21、及保護膜之態樣。又，自抑制基板端部之發塵之觀點而言，於在玻璃基板10上成膜多層反射膜21時，亦可於自基板外周端部向內側特定之寬度(例如數mm左右)之區域不成膜多層反射膜21。於本實施形態中亦包含此種態樣。 其次，於如上所述般製作之附多層反射膜之基板20'形成上述第1基準標記22。如上文說明，形成於該附多層反射膜之基板20'之第1基準標記22係形成於由該附多層反射膜之基板製作之反射型光罩基底之對準區域內。對於第1基準標記22已進行了說明，因此此處省略重複說明。 此處，於附多層反射膜之基板20'之多層反射膜21上之特定位置，使用例如利用微小壓頭之壓痕(沖孔)，形成如例如上述圖3(a)所示之形狀般之第1基準標記22(參照圖10(a))。 與第1實施形態同樣地，形成上述第1基準標記22之方法並不限定於使用上述微小壓頭之方法。例如於基準標記之截面形狀為凹形狀之情形時，可藉由利用聚焦離子束、光微影法、雷射光之凹部形成、掃描金剛石針而產生之加工痕、利用壓印法之壓紋等而形成。 再者，於基準標記22之截面形狀為凹形狀之情形時，自提昇缺陷檢查光之檢測精度之觀點而言，較佳為以自凹形狀之底部朝向表面側而變寬之方式形成之截面形狀。 又，如上所述，上述第1基準標記22係形成於較附多層反射膜之基板20'之主表面上之圖案形成區域更外周緣側之區域之任意位置(參照圖7、圖8、圖9)，但於該情形時，亦可以邊緣為基準形成第1基準標記，或於形成第1基準標記後，以座標測量器特定出基準標記形成位置。 例如，於以聚焦離子束(FIB)加工第1基準標記22之情形時，附多層反射膜之基板20'之邊緣可藉由2次電子像、2次離子像、或光學像而識別。又，於以其他方法(例如壓痕)加工第1基準標記22之情形時，可藉由光學像進行識別。例如確認附多層反射膜之基板20'之四邊之8個部位之邊緣座標，進行傾斜修正，從而進行原點(0，0)定位。該情形時之原點可任意設定，可為基板之角部或中心。於距如此以邊緣為基準設定之原點之特定位置，以FIB形成第1基準標記22。 當以缺陷檢查裝置檢測此種以邊緣為基準形成之第1基準標記22時，由於已知基準標記之形成位置資訊、即距邊緣之距離，因此可容易地特定出基準標記形成位置。 又，亦可應用當於多層反射膜21上之任意位置形成第1基準標記22後，以座標測量器特定出基準標記形成位置之方法。該座標測量器係以邊緣為基準測量第1基準標記之形成座標者，例如可使用高精度圖案位置測定裝置(KLA-Tencor公司製造之LMS-IPRO4)，所特定之基準標記形成座標成為基準標記之形成位置資訊。 其次，對如上所述般製作之形成有第1基準標記22之附多層反射膜之基板20'進行缺陷檢查。即，對於附多層反射膜之基板20'，藉由缺陷檢查裝置，進行包含上述第1基準標記22在內之缺陷檢查，獲取藉由缺陷檢查而檢測之缺陷與位置資訊，從而獲得包含第1基準標記22在內之缺陷資訊。又，該情形時之缺陷檢查係對至少圖案形成區域之整面進行。作為附多層反射膜之基板20'之缺陷檢查裝置，宜使用上述之例如檢查光源波長為266 nm之Lasertec公司製造之EUV曝光用光罩·基板/基底缺陷檢查裝置「MAGICS M7360」、檢查光源波長為193 nm之KLA-Tencor公司製造之EUV·光罩/基底缺陷檢查裝置「Teron600系列，例如Teron610」、將檢查光源波長設為曝光光源波長之13.5 nm之ABI裝置等。尤其較佳為使用可檢測微細缺陷之如上述ABI裝置般之缺陷檢查裝置進行高精度之缺陷檢查。 其次，於上述附多層反射膜之基板20'中之上述多層反射膜21(於在多層反射膜之表面包含上述保護膜之情形時為該保護膜)上，成膜吸收EUV光之吸收體膜31，製作反射型光罩基底(參照圖10(b))。 再者，雖未圖示，亦可於玻璃基板10之與形成有多層反射膜等之側為相反側之側設置背面導電膜。 於本實施形態中，於在上述多層反射膜21上成膜吸收體膜31時，於上述附多層反射膜之基板20'之主表面之特定部位、具體而言於包含形成於上述附多層反射膜之基板20'之上述第1基準標記22之區域，形成未成膜吸收體膜31而使包含第1基準標記22之區域之多層反射膜21露出的對準區域32'(參照圖10(b))。該對準區域32'係形成為使包含形成於多層反射膜21之上述第1基準標記22之區域之多層反射膜21露出的形狀、大小。 於形成該對準區域32'之步驟中，以不成膜上述吸收體膜31而使上述多層反射膜21露出之方式設置遮蔽構件成膜吸收體膜31。例如，如圖11所示，於欲形成對準區域32'之附多層反射膜之基板20'主表面之特定部位，與基板周緣部分隔地設置遮蔽構件50，例如藉由濺鍍法而成膜吸收體膜31。於基板周緣部附近，使遮蔽構件50覆蓋於包含第1基準標記22之區域之多層反射膜21上，因此對於遮蔽構件50之形狀、大小、遮蔽長度d，考慮欲形成之對準區域32'之形狀、大小等而決定即可。又，對於玻璃基板10主表面與遮蔽構件50之分隔距離h，亦適當調節即可，通常較佳為設為9 mm左右。 藉由利用以上之成膜方法之對準區域形成步驟，而於包含形成於上述附多層反射膜之基板20'之上述第1基準標記22之區域，形成未成膜吸收體膜31而使包含第1基準標記22之區域之多層反射膜21露出的對準區域32'。於除該對準區域32'以外之附多層反射膜之基板20'上，成膜上述吸收體膜31。 再者，作為對準區域32'之形成方法，例如亦考慮如下方法：藉由於附多層反射膜之基板之整面預先成膜吸收體膜，並將設為對準區域之區域之吸收體膜去除(剝離)，而形成使包含基準標記之區域之多層反射膜露出之對準區域。然而，於該方法中，有因去除對準區域之吸收體膜而導致基準標記變形等風險。又，亦有去除吸收體膜時之發塵之虞。與此相對，根據如上所述之本實施形態中之對準區域形成步驟，於包含形成於附多層反射膜之基板20'之上述第1基準標記22之區域，形成未成膜吸收體膜31而使包含第1基準標記22之區域之多層反射膜21露出的對準區域32'，因此避免基準標記之變形等風險，亦不會產生上述發塵之問題。 吸收體膜31係與第1實施形態完全相同，因此省略重複說明。 其次，於上述吸收體膜31形成第2基準標記42(參照圖10(c))。 該第2基準標記42係成為進行與上述第1基準標記22之相對座標管理時之基準者，形成於上述對準區域32'之圖案形成區域側附近之吸收體膜31。於圖7之實施形態中，作為具體之一例，第2基準標記42係形成於基板角隅之第1基準標記22附近、且為圖案形成區域之角隅之外側附近。對於第2基準標記42已進行詳細說明，因此此處省略重複說明。 作為為了形成該第2基準標記42而去除與該區域相當之吸收體膜31之方法，例如較佳為應用聚焦離子束。又，亦可應用光微影法。於該情形時，於吸收體膜31上，形成特定之抗蝕圖案(於與第2基準標記對應之區域未形成抗蝕劑之圖案)，以該抗蝕圖案為遮罩，對使與第2基準標記相當之區域露出之吸收體膜進行乾式蝕刻，去除與該區域相當之吸收體膜31而形成第2基準標記42。作為該情形時之蝕刻氣體，使用與吸收體膜31之圖案化時所使用者相同之蝕刻氣體即可。 如上所述般，製作反射型光罩基底30'，該反射型光罩基底30'係於圖案形成區域之外周緣區域，形成有未成膜上述吸收體膜31而使包含上述第1基準標記22之區域之多層反射膜21露出的對準區域32'、及第2基準標記42(參照圖10(c))。 其次，對如上所述般製作之包含第1基準標記22之對準區域32'與第2基準標記42，使用缺陷檢查裝置進行檢查。於該情形時，較佳為與進行上述多層反射膜上之缺陷檢查之檢查裝置使用同樣之檢查光進行檢查。其原因在於：可使兩者之檢查裝置所得之座標精度一致。 於該情形時，以上述第2基準標記42為基準，檢查形成於上述對準區域32'內之上述第1基準標記22，檢測以第2基準標記42為基準之第1基準標記22之位置座標。其後，基於藉由上述缺陷檢查所得之附多層反射膜之基板20'之缺陷資訊，製作以上述第1基準標記22為基準之缺陷資訊(第1缺陷圖)，使用以上述第2基準標記42為基準之第1基準標記22之座標，將上述缺陷資訊(第1缺陷圖)轉換為以第2基準標記為基準之缺陷資訊(第2缺陷圖)。該第1基準標記22與第2基準標記42較佳為係使用如上述ABI裝置般之可高精度地檢測微細缺陷之缺陷檢查裝置進行檢查。 再者，對於此種包含第1基準標記22之對準區域32'與第2基準標記42，亦可代替使用缺陷檢查裝置，而以上述座標測量器進行檢查，檢測以第2基準標記42為基準之第1基準標記22之位置座標。 於此種藉由本實施形態所得之反射型光罩基底30'中，於圖案形成區域之外周緣區域，形成有使包含上述第1基準標記22之區域之多層反射膜21露出之對準區域32'，因此可使用該對準區域32'進行反射型光罩基底30'之缺陷管理。即，可使用該對準區域32'，進行上述第1基準標記22與第2基準標記42之相對座標之管理。其結果為，可根據以上述第1基準標記22為基準之缺陷資訊(第1缺陷圖)，獲得以上述第2基準標記42為基準之缺陷資訊(第2缺陷圖)。由於吸收體膜31係形成於多層反射膜21上，因此多層反射膜21之缺陷亦反映於吸收體膜31，故而可經由對準區域32'而以上述第2基準標記42為基準高精度地管理多層反射膜21上之缺陷。於進行反射型光罩基底30之缺陷管理之情形時，尤其藉由使用上述ABI裝置，即便為微細缺陷亦可高精度地進行檢測，而且可獲得精度良好之缺陷資訊。又，根據本實施形態，由於不會因上述對準區域32'之形成而發生第1基準標記22之變形等，因此不會產生使用第1基準標記22之對準誤差。 又，反射型光罩基底30'表面之缺陷檢查亦可不進行，為了進行更高精度之缺陷管理，亦可進行整面檢查或縮短檢查時間之部分檢查。 於上述第2、第3實施形態中，對在上述對準區域32'內形成有成為缺陷資訊之基準之第1基準標記22之反射型光罩基底進行了說明。然而，如上文說明，若於上述對準區域32'內存在可藉由缺陷檢查裝置之檢查光進行對準之實際缺陷，則上述第1基準標記22亦可為此種實際缺陷，於檢查對準區域32'時，可檢查以第2基準標記42為基準之實際缺陷之座標。 如以上說明所述，藉由本發明之第2、第3實施形態之製造方法而獲得之反射型光罩基底30'係於圖案形成區域之外周緣區域，形成有使包含上述第1基準標記22之區域之多層反射膜21露出之對準區域32'。因此，反射型光罩基底30'之缺陷管理之缺陷管理可使用該對準區域32'、具體而言、使用形成於該對準區域32'內之例如上述第1基準標記22而進行高精度之缺陷管理。其結果為，可獲取包含缺陷位置資訊之精度良好之缺陷資訊。又，可使用該對準區域32'與第2基準標記42而進行上述第1基準標記22與第2基準標記42之相對座標之管理。 又，與第1實施形態同樣地，於本發明之第2、第3實施形態之反射型光罩基底30'中，亦包含於上述吸收體膜31上形成有硬質遮罩膜(亦稱為蝕刻遮罩膜)之態樣。硬質遮罩膜係於對吸收體膜31進行圖案化時具有遮罩功能者，包含與吸收體膜31之最上層之材料蝕刻選擇性不同之材料。硬質遮罩膜之材料係如第1實施形態中所說明般。 又，本發明之第2、第3實施形態之反射型光罩基底30'亦可設為如下構成：以包含蝕刻選擇性互不相同之材料之最上層及除其以外之層之積層膜構成吸收體膜，且使最上層具有作為對於除其以外之層的硬質遮罩膜之功能。 如上所述，本發明之第2、第3實施形態之反射型光罩基底30'中之吸收體膜31並不限定於單層膜，可藉由同一材料之積層膜、不同種類材料之積層膜而構成，進而，可設為如上所述之積層膜或單層膜之吸收體膜與硬質遮罩膜之積層膜之構成。 又，於本發明之第2、第3實施形態之反射型光罩基底30'中，亦包含於上述吸收體膜31上形成有抗蝕膜之態樣。此種抗蝕膜係用於藉由光微影法對反射型光罩基底中之吸收體膜進行圖案化時。 又，於在吸收體膜31上介隔或不介隔上述硬質遮罩膜而設置有抗蝕膜之情形時，第2基準標記42之形狀會被轉印至抗蝕膜。而且，轉印至抗蝕膜之第2基準標記42相對於電子束描繪裝置之電子束掃描具有對比度，可藉由電子束檢測。此時，由於藉由第1基準標記22與第2基準標記42進行相對座標之管理，因此即便不將較第2基準標記42相對較小之第1基準標記22之形狀轉印至抗蝕膜亦可進行高精度之描繪。 再者，為了進一步提昇相對於電子束掃描之對比度，亦可設為於包含第2基準標記42之區域之上不形成抗蝕膜、或去除包含第2基準標記42之區域之上之抗蝕膜的構成。 [第2、第3實施形態之反射型光罩] 本發明亦提供上述圖7之構成之反射型光罩基底中之上述吸收體膜經圖案化之反射型光罩及其製造方法。該說明亦可應用於第3實施形態。 即，藉由於上述反射型光罩基底30'上塗佈電子束描繪用抗蝕劑並進行烘焙而形成抗蝕膜。繼而，使用電子束描繪裝置對抗蝕膜進行描繪、顯影，於抗蝕膜形成與轉印圖案對應之抗蝕圖案。其後，以該抗蝕圖案為遮罩對吸收體膜31進行圖案化而形成吸收體膜圖案31a，藉此製作反射型光罩40'(參照圖10(d))。 於本實施形態中，可基於以例如上述反射型光罩基底30'中之第2基準標記42為基準之缺陷資訊對描繪圖案進行修正，對吸收體膜31進行圖案化。 對反射型光罩基底30'中之成為轉印圖案之上述吸收體膜31進行圖案化之方法最佳為如上所述之光微影法。再者，於使用包含上述硬質遮罩膜之構成之反射型光罩基底製造反射型光罩之情形時，亦可最終去除硬質遮罩膜，但若殘留硬質遮罩膜亦不會對作為反射型光罩之功能產生影響，則亦可不特意去除。 以上述方式獲得之上述反射型光罩40'至少於基板10上形成有反射EUV光之多層反射膜21，於該多層反射膜21上形成有吸收EUV光之吸收體膜圖案31a，且於該反射型光罩40'主表面上之圖案形成區域之外周緣區域，形成有未成膜吸收體膜31而使包含第1基準標記22之區域之多層反射膜21露出之對準區域32'，且於對準區域32'之圖案形成區域側附近形成有第2基準標記42。 於第2、第3實施形態中，如上所述，可獲取包含多層反射膜中之缺陷位置資訊之精度良好之缺陷資訊，從而高精度地進行反射型光罩基底之缺陷管理。因此，於光罩之製造中，可基於該缺陷資訊，與預先設計之描繪資料(光罩圖案資料)進行對照，以減少缺陷造成之影響之方式對描繪資料以高精度進行修正(校正)。其結果為，可獲得於最終製造之上述反射型光罩40'中減少缺陷者。 進而，藉由使用上述反射型光罩40'將轉印圖案曝光轉印至半導體基板上之抗蝕膜，而可製造缺陷較少之高品質之半導體裝置。 [實施例] 以下，藉由實施例，對本發明之第2、第3實施形態進一步具體進行說明。 (實施例2) 準備如下SiO2 -TiO2 系之玻璃基板(大小約152.0 mm×約152.0 mm，厚度約6.35 mm)，其係使用雙面研磨裝置，藉由氧化鈰研磨粒或膠體氧化矽研磨粒而階段性地進行研磨，且利用低濃度之矽氟酸對基板表面進行表面處理者。所得之玻璃基板之表面粗糙度以均方根粗糙度(Rq)計為0.25 nm。再者，表面粗糙度係藉由原子力顯微鏡(AFM)進行測定，測定區域設為1 μm×1 μm。 其次，使用離子束濺鍍裝置，以Si膜(膜厚：4.2 nm)與Mo膜(膜厚：2.8 nm)為一週期，於玻璃基板之主表面積層40週期，最後形成Si膜(膜厚：4 nm)，進而於其上成膜包含Ru之保護膜(膜厚：2.5 nm)，獲得附多層反射膜之基板。 其次，於上述附多層反射膜之基板之多層反射膜表面之特定部位(上述圖8所示之位置)按以下之表面形狀形成截面形狀為凹形狀之第1基準標記。第1基準標記之形成係藉由利用微小壓頭之壓痕(沖孔)進行。具體而言，藉由以特定壓力將微小壓頭壓抵於多層反射膜，而形成第1基準標記。於形成第1基準標記後，進行洗淨。 於本實施例2中，作為第1基準標記，設為上述圖3(a)所示之形狀，大小設為直徑500 nm之圓形，深度設為60 nm。 其次，對於附多層反射膜之基板表面，藉由上述ABI裝置進行包含上述第1基準標記在內之缺陷檢查。於該缺陷檢查中，獲取凸部、凹部之缺陷位置資訊、及缺陷尺寸資訊，獲得包含第1基準標記在內之缺陷資訊。 又，藉由EUV反射率計對該附多層反射膜之基板之保護膜表面之反射率進行評價，結果為64%±0.2%，良好。 其次，使用DC磁控濺鍍裝置，於上述附多層反射膜之基板之保護膜上，成膜包含TaBN膜(膜厚：56 nm)與TaBO膜(膜厚：14 nm)之積層膜之吸收體膜，又，於附多層反射膜之基板之背面形成CrN導電膜(膜厚：20 nm)而獲得反射型光罩基底。 再者，於成膜上述吸收體膜31時，為了不於上述附多層反射膜之基板20'之主表面之特定部位、具體而言於包含形成於上述附多層反射膜之基板20'之上述第1基準標記22之區域成膜吸收體膜31，而如圖11所說明般與基板周緣部分隔地設置遮蔽構件，成膜吸收體膜31。由於以遮蔽構件覆蓋於包含第1基準標記之區域之多層反射膜上，因此對於遮蔽構件之形狀、大小、遮蔽長度d，係考慮欲形成之對準區域之形狀、大小等而決定。於本實施例2中，設為與圖11中說明之形狀、大小相同。又，對於玻璃基板主表面與遮蔽構件之分隔距離h亦適當調節。 藉由以上方法，於包含上述第1基準標記之區域形成未成膜吸收體膜而使包含第1基準標記之區域之多層反射膜露出之對準區域，於除該對準區域以外之附多層反射膜之基板上，成膜上述吸收體膜。再者，未產生形成於對準區域內之第1基準標記之變形等。 其次，於上述反射型光罩基底之表面之特定部位(上述圖7所示之位置)，形成第2基準標記。作為第2基準標記，以成為上述圖4(a)所示之十字形狀之方式形成。第2基準標記係大小為寬度5 μm且長度550 μm之十字形狀，且由於將吸收體膜全部去除，因此深度設為約70 nm。 為了形成上述第2基準標記，使用聚焦離子束。此時之條件係設為加速電壓50 kV、離子束電流值20 pA。於形成第2基準標記後，進行洗淨。如此，獲得形成有第2基準標記之反射型光罩基底。 對於所得之反射型光罩基底，藉由與附多層反射膜之基板之缺陷檢查相同之上述ABI裝置進行對準區域內之第1基準標記與第2基準標記之檢查。此時，以第2基準標記為基準檢查第1基準標記，並檢測以第2基準標記為基準之第1基準標記之位置座標。由於在對準區域中使多層反射膜露出，因此可藉由ABI裝置精度良好地檢測對準區域內之第1基準標記。藉由進行第2基準標記與第1基準標記之相對座標之管理，而可以第2基準標記為基準，高精度地管理多層反射膜上之缺陷。 如此，獲得以第2基準標記為基準之反射型光罩基底之缺陷資訊。 進而，藉由以座標測定器(KLA-Tencor公司製造之LMS-IPRO4)測量第2基準標記，而進行轉換為電子束描繪步驟之基準座標之校正。 其次，使用已獲取該缺陷資訊之EUV反射型光罩基底，製作EUV反射型光罩。 首先，藉由旋轉塗佈法而於EUV反射型光罩基底上塗佈電子束描繪用抗蝕劑，進行烘焙而形成抗蝕膜。 此時，基於第2基準標記進行對準。然後，基於EUV反射型光罩基底之缺陷資訊，與預先設計之光罩圖案資料進行對照，修正為對使用曝光裝置之圖案轉印不存在影響之光罩圖案資料，或於判斷為對圖案轉印存在影響之情形時，例如修正為以將缺陷隱藏於圖案之下之方式追加修正圖案資料的光罩圖案資料等，對上述抗蝕膜，藉由電子束而描繪光罩圖案並使其顯影，形成抗蝕圖案。於本實施例2中，由於獲得了包含精度較高之缺陷位置資訊之缺陷資訊，因此可高精度地進行光罩圖案資料之修正。 以該抗蝕圖案為遮罩，對於吸收體膜，藉由氟系氣體(CF4 氣體)而將TaBO膜蝕刻去除，藉由氯系氣體(Cl2 氣體)而將TaBN膜蝕刻去除，於保護膜上形成吸收體膜圖案。 進而，利用熱硫酸去除殘留於吸收體膜圖案上之抗蝕圖案，獲得EUV反射型光罩。 將如此獲得之反射型光罩設置於曝光裝置，對形成有抗蝕膜之半導體基板上進行圖案轉印，結果為，不存在因反射型光罩產生之轉印圖案之缺陷，可進行良好之圖案轉印。 (參考例2) 於上述實施例2中，於形成有第1基準標記之附多層反射膜之基板上形成上述吸收體膜時，於整面成膜吸收體膜，不形成上述對準區域，除此以外，與實施例2同樣地製作反射型光罩基底。 與實施例2同樣地，以ABI裝置進行附多層反射膜之基板之缺陷檢查，獲取缺陷位置資訊、缺陷尺寸資訊。又，對於反射型光罩基底中形成有第1基準標記之吸收體膜上之區域以ABI裝置進行檢查之結果為：形成於多層反射膜之第1基準標記係EUV光下之對比度較低，無法精度良好地檢測，因此獲取之缺陷座標之精度較差，難以獲得反射型光罩基底之缺陷資訊。 其次，與實施例2同樣地，使用該EUV反射型光罩基底，製作EUV反射型光罩。 將所得之EUV反射型光罩設置於曝光裝置，對形成有抗蝕膜之半導體基板上進行圖案轉印，結果觀察到因反射型光罩產生之轉印圖案缺陷。認為其原因在於：如上所述，第1基準標記之缺陷座標之精度較差，難以獲得反射型光罩基底之缺陷資訊，因此於圖案描繪步驟中，無法以高精度進行基於EUV反射型光罩基底之缺陷資訊之光罩圖案資料之修正，從而無法將多層反射膜上之缺陷精度良好地隱藏於吸收體膜圖案下。 再者，與實施例1同樣地，於實施例2中，亦列舉藉由利用微小壓頭之壓痕而形成第1基準標記之例進行了說明，但並不限定於此。如上文亦說明般，除該方法以外，亦可藉由利用聚焦離子束、光微影法、雷射光等之凹部形成、掃描金剛石針而產生之加工痕、利用壓印法之壓紋等而形成。又，於實施例2中，亦列舉於對準區域形成有第1基準標記之例進行了說明，但亦可為存在於對準區域之實際缺陷。Hereinafter, embodiments of the present invention will be described in detail. [Reflection type photomask base of the first embodiment] FIG. 1 is a plan view showing a reflection type photomask base of a first embodiment of the present invention. Moreover, FIG. 2 is a top view of a substrate with a multilayer reflective film that constitutes the base of the reflective mask shown in FIG. 1 . Furthermore, FIG. 6 is a schematic cross-sectional view showing the manufacturing steps of the reflective mask base and the reflective mask according to the first embodiment of the present invention. As shown in FIGS. 1 and 6 , in the reflective mask base 30 of the first embodiment of the present invention, a multilayer reflective film 21 for reflecting EUV light as exposure light is formed on at least the substrate 10 , and on the multilayer reflective film An absorber film 31 for absorbing EUV light is formed on the 21 (see FIG. 6( c )). A plurality of alignment regions 32 are formed on the outer peripheral region of the pattern forming region (in the region shown by the dotted line in FIG. 1 ) on the main surface of the reflective mask substrate 30 . The pattern forming area is the area on the absorber film 31 where the transfer pattern is to be formed, and is, for example, an area of 132 mm×132 mm in a 6-inch square substrate. The alignment region 32 is a region (removal region) in which the multilayer reflective film 21 including the region serving as a reference for defect information on the multilayer reflective film 21 is exposed. In the present embodiment, the first reference mark 22 is formed on the multilayer reflective film 21 as an example of the reference to be the defect information. Further, on the absorber film 31 in the vicinity of the alignment region 32, a second fiducial mark 42 serving as a fiducial for the first fiducial mark 22 and used for alignment in an electron beam drawing step in mask manufacturing is formed. The positional relationship between the second fiducial mark 42 and the first fiducial mark in the alignment area 32 may be, for example, included in an area surrounded by 10 mm×10 mm. In addition, the second reference mark 42 is preferably formed relatively larger than the first reference mark 22 . That is, it is preferable that the width or length of the second fiducial mark 42 is greater than the width or length of the first fiducial mark 22 , and/or the depth or height of the cross-sectional shape of the second fiducial mark 42 is greater than that of the cross-sectional shape of the first fiducial mark 22 . depth or height. Further, in the present embodiment, as an example, the alignment region 32 and the second fiducial mark 42 are formed in the outer peripheral region of the pattern formation region of the reflective mask base 30, specifically, the corners of the pattern formation region 4 parts in the vicinity, but not limited to this. In the present embodiment, since the alignment region 32 is a region where the multilayer reflective film 21 including the region of the first fiducial mark 22 formed on the multilayer reflective film 21 is exposed, the position or number of the alignment region 32 is formed. It also differs depending on the position or the number of the first reference marks 22 formed on the multilayer reflective film 21 . In addition, although it demonstrates below, in this invention, the number of objects of a 1st and 2nd reference mark is not specifically limited. About the 1st and 2nd fiducial mark, at least 3 pieces are required, and 3 or more pieces may be sufficient. In addition, the alignment region 32 only needs to expose the region including at least the first fiducial mark 22 formed on the multilayer reflective film 21, and can be inspected by a defect inspection apparatus used for defect inspection of the substrate 20 with the multilayer reflective film. The above-mentioned first reference mark 22 is sufficient, and therefore under this condition, the shape, size, and the like of the above-mentioned alignment region 32 do not need to be particularly restricted. For example, as shown in FIG. 1 , the alignment region 32 can be formed into an L-shape adjacent to the corners of the pattern forming region, and the lateral length L1 of the outer peripheral portion of the L - shape can be set to be 4.0 mm to 8.0 mm, The longitudinal length L 2 is 4.0 mm to 8.0 mm. In addition, the width W of the L-shape can be set to 1.0 mm to 4.0 mm. In the reflective mask base 30 of the present embodiment, for example, a part of the absorber film 31 is removed so as to include the first reference mark 22 formed on the multilayer reflective film 21 in the outer peripheral region of the pattern forming region. The alignment region 32 exposed by the multilayer reflective film 21 in the region can be used for defect management of the reflective mask substrate 30 . That is, the relative coordinates of the first reference mark 22 and the second reference mark 42 described below can be managed using the first reference mark 22 formed in the alignment region 32 . As a result, from the defect information (first defect map) based on the first fiducial mark 22, the defect information (second defect map) based on the second fiducial mark 42 can be obtained. In addition, when the defect management of the reflective mask substrate 30 is performed using an ABI (Actinic Blank Inspection) apparatus, the alignment region 32 exposes the multilayer reflective film 21, so that the first reference mark 22 can be detected with high accuracy. . Therefore, the management of the relative coordinates of the first fiducial mark 22 and the second fiducial mark 42 can be performed with high accuracy, and as a result, the reflective mask base 30 with the second fiducial mark 42 as a reference can be satisfactorily performed. Defect management. The reflective mask substrate 30 of the first embodiment of the present invention is preferably used, for example, as the above-mentioned ABI device using inspection light with a wavelength shorter than 100 nm (a wavelength close to the wavelength of the light source of exposure light (eg, EUV light)). The defect inspection apparatus inspects the first reference mark 22 and the second reference mark 42 . In addition, for the substrate 20 with a multilayer reflective film on which the absorber film 31 has not been formed (refer to FIG. 2 and FIG. 6(a) ), the substrate 20 with a multilayer reflective film including the first reference mark 22 can be formed defect inspection. In this way, the defect coordinates obtained by the defect inspection of the substrate 20 with the multilayer reflective film can be matched with the coordinates of the first fiducial mark 22 obtained with the second fiducial mark 42 as a reference, so there is no need to carry out the defect information of both. It is more advantageous to convert the coordinates between them. Next, the above-mentioned first and second reference marks 22 and 42 will be described. FIG. 3 is a diagram showing the shape of the first reference mark 22 , FIG. 4 is a diagram showing the shape of the second reference mark 42 , and FIG. 5 is for explaining a method of determining a reference point using the second reference mark 42 's diagram. In the above-described embodiment, as an example, the alignment regions 32 are formed at four locations near the corners of the reflective mask base 30 . Furthermore, the above-mentioned first fiducial marks 22 are formed on the multilayer reflection film 21 in the alignment region 32 . Preferably, the first fiducial marks 22 are all formed in the area indicated by the dotted line A (refer to FIG. 2 ) on the main surface of the multilayer reflective film-attached substrate 20 corresponding to the pattern forming area on the main surface of the reflective mask substrate 30 . The boundary line, or formed outside of this area. However, if the first reference mark 22 is too close to the outer peripheral edge of the substrate, it may intersect with other types of identification marks, which is not preferable. The above-mentioned first reference mark 22 serves as a reference for the defect position in the defect information. Moreover, it is preferable that the said 1st reference mark 22 has a point symmetrical shape. Furthermore, for example, when the above-mentioned ABI apparatus or the like that uses short-wavelength light having a wavelength shorter than 100 nm as defect inspection light is used for defect inspection, it is preferable that the first reference mark 22 has a width of 30° with respect to the scanning direction of the defect inspection light. A part with a width of not less than nm and not more than 1000 nm. In FIG. 3, several shapes of the first fiducial mark 22 are shown, and the circular fiducial mark in FIG. 3(a) is a representative example. Moreover, for example, the shape of a rhombus as shown in FIG. 3(b), the shape of an octagon as shown in FIG. 3(c), or the shape of a cross as shown in FIG. 3(d) may be used. In addition, although not shown in figure, the said 1st reference mark can also be set as the shape of a square or the corner part of a square with a radian. In addition, this invention is not limited to the embodiment of such a 1st reference mark. Since the first reference mark 22 has a point-symmetric shape, for example, the deviation of the reference point of the defect position determined by scanning the defect inspection light can be reduced, and the detection based on the first reference mark 22 can be performed. The deviation of the defect detection position becomes smaller. In FIG. 4 , several shapes of the second reference mark 42 are shown, and the cross-shaped reference mark in FIG. 4( a ) is a representative example. Also, for example, it may be in an L-shape as shown in FIG. 4(b), or as shown in FIG. 4(c) by arranging four auxiliary marks 42b to 42e around the main mark 42a, or as shown in FIG. 4 (d) shows a reference mark in which two auxiliary marks 42b and 42c are generally arranged around the main mark 42a. In addition, this invention is not limited to the embodiment of such a 2nd reference mark. 4(a) or the L-shaped shape of FIG. 4(b), the auxiliary marks 42b to 42e (42b) arranged around the main mark 42a as shown in FIG. 4(c) or FIG. 4(d) , 42c) is preferably configured along the scanning direction of the defect inspection light or electron beam drawing device, and especially preferably includes a long side perpendicular to the scanning direction of the defect inspection light or electron beam drawing device and a long side parallel to it. Rectangular shape with short sides (for example, see Figure 5). By making the second fiducial mark include a rectangular shape having a long side perpendicular to the scanning direction of the defect inspection light or electron beam and a short side parallel to it, it can be scanned by a defect inspection apparatus or an electron beam drawing apparatus. Since the second reference mark is surely detected, the position of the second reference mark with respect to the first reference mark can be easily specified. In this case, the long side of the second fiducial mark is preferably the length that can be detected by the scan of the defect inspection device or the electron beam drawing device as few times as possible, in the case where the above-mentioned ABI device or the like is used for defect inspection. In this case, for example, it is preferable to have a length of 100 μm or more and 1500 μm or less. Further, in the present embodiment, the first and second reference marks 22 and 42 are formed by, for example, indentation (punching) using a micro indenter or a focused ion beam on the multilayer reflective film 21 or the absorber film 31. The concave shape (cross-sectional shape) of the desired depth. However, the cross-sectional shapes of the first and second fiducial marks 22 and 42 are not limited to concave shapes, and may be convex shapes, as long as the cross-sectional shapes can be detected with high accuracy by a defect inspection apparatus or an electron beam drawing apparatus. Can. The above-mentioned descriptions about the first and second reference marks 22 and 42 with reference to FIGS. 3 to 5 are also applicable to the following second and third embodiments. In the above-described embodiment, the case where the first fiducial marks 22 serving as a reference for defect information are formed in the alignment region 32 has been described, but the reference marks serving as a reference for defect information are not limited to the fiducial marks. If there is an actual defect that can be aligned by the inspection light of the defect inspection apparatus in the alignment area 32, when the alignment area 32 is inspected, the coordinates of the actual defect based on the second reference mark 42 can be inspected. In the case of this embodiment, the defect inspection is performed on the substrate 20 with the multilayer reflective film. If an actual defect is detected in the outer peripheral region of the pattern forming area, after the absorber film 31 is formed, the multilayer reflective film 21 is placed on the surface. The region including the actual defect may be formed as the alignment region 32 . As described above, even if a defect inspection apparatus such as the above-mentioned ABI apparatus capable of inspecting fine defects is used to perform high-precision defect inspection, since the reflectance of EUV light on the absorber film is low, the signal intensity of defects is relatively low. It is difficult to obtain accurate defect information including defect position information in the absorber film, for example. On the other hand, as described above, in the reflective mask base according to the first embodiment of the present invention, in the outer peripheral region of the pattern forming region, for example, a reference including defect information formed on the multilayer reflective film is formed. The alignment region 32 where the multilayer reflective film 21 is exposed in the region of the first fiducial mark 22 . Therefore, if the defect management of the reflective mask substrate is performed using the alignment region 32 , more specifically, for example, using the first fiducial marks 22 formed in the alignment region 32 for alignment, the reflective light mask can be performed. High-precision defect management of mask substrates. [Method of Manufacturing Reflective Mask Base of First Embodiment] Next, a method of manufacturing a reflective mask base of the first embodiment of the present invention will be described. As described in the above configuration 1, the method for manufacturing a reflective mask base according to the first embodiment of the present invention is characterized in that a multilayer reflective film for reflecting EUV light is formed on at least the substrate, and the multilayer reflective film is formed on the multilayer reflective film. A method for manufacturing a reflective mask base having an absorber film absorbing EUV light formed thereon, comprising the steps of: forming the multilayer reflective film on the substrate to form a substrate with the multilayer reflective film; Defect inspection of the substrate; forming the absorber film on the multilayer reflective film of the substrate with the multilayer reflective film; forming a reflective mask base, the reflective mask base is formed in the peripheral region outside the pattern forming area There is an alignment area in which the above-mentioned multilayer reflective film is exposed by removing the above-mentioned absorber film and including an area serving as a reference for defect information on the above-mentioned multilayer reflective film; and using the above-mentioned alignment area for defect management of the above-mentioned reflective mask substrate . 6 is a cross-sectional view showing a manufacturing process of the reflection type photomask substrate and the reflection type photomask according to the first embodiment of the present invention. Hereinafter, description will be made according to the steps shown in FIG. 6 . First, on the glass substrate 10, a multilayer reflective film 21 that reflects exposure light such as EUV light is formed to form a substrate 20 with the multilayer reflective film (see FIG. 6(a)). In the case of EUV exposure, the glass substrate 10 is preferably used as the substrate. In particular, in order to prevent the deformation of the pattern caused by the heat during exposure, it is preferable to use a glass substrate having a range of 0±1.0×10 -7 /°C. Low thermal expansion coefficient within the range of 0±0.3×10 -7 /℃. As a material having a low thermal expansion coefficient in this range, for example, SiO 2 -TiO 2 based glass, multi-component based glass ceramics, and the like can be used. From the viewpoint of at least improving the pattern transfer accuracy and the positional accuracy, the main surface of the glass substrate 10 on the side where the transfer pattern is to be formed is surface-processed so as to have high flatness. In the case of EUV exposure, in an area of 142 mm×142 mm on the main surface of the glass substrate 10 where the transfer pattern is to be formed, the preferred flatness is 0.1 μm or less, particularly preferably 0.05 μm or less. In addition, the main surface on the opposite side to the side where the transfer pattern is to be formed is the surface that is electrostatically adsorbed when installed in the exposure device, and the flatness in the area of 142 mm×142 mm is 0.1 μm or less, preferably 0.05 μm or less. Further, as the glass substrate 10, as described above, a material having a low thermal expansion coefficient such as SiO 2 -TiO 2 based glass is preferably used, but such a glass material is difficult to achieve in terms of surface roughness, for example, uniformity by precision grinding. The root square roughness (Rq) is high smoothness of 0.1 nm or less. Therefore, in order to reduce the surface roughness of the glass substrate 10 or reduce the defects on the surface of the glass substrate 10 , a base layer can also be formed on the surface of the glass substrate 10 . As the material of the base layer, it is not necessary to have light transmittance with respect to the exposure light, and it is preferable to select a material that can obtain high smoothness and improve defect quality when the surface of the base layer has been precisely ground. For example, Si or a silicon compound containing Si (such as SiO 2 , SiON, etc.) is preferably used as the material of the base layer because it obtains higher smoothness when it is precisely ground, so that the defect quality becomes good. The material of the base layer is particularly preferably Si. The surface of the base layer is preferably a surface that has been precisely polished so as to have smoothness required as a substrate for a reflection type photomask base. The surface of the base layer is preferably precision-polished so that the root mean square roughness (Rq) is 0.15 nm or less, particularly preferably 0.1 nm or less. Furthermore, in consideration of the influence on the surface of the multilayer reflective film 21 formed on the base layer, the surface of the base layer is preferably so that Rmax/Rq is preferably 2 to 10 in relation to the maximum height (Rmax), In particular, it is preferable to perform precision grinding in a manner of 2 to 8. The thickness of the base layer is preferably in the range of, for example, 10 nm to 300 nm. The above-mentioned multilayer reflective film 21 is a multilayer film in which low-refractive index layers and high-refractive index layers are alternately laminated. Usually, thin films of heavy elements or their compounds and light elements or their compounds are alternately laminated for about 40 to 60 periods. Multilayer film made of thin film. For example, as a multilayer reflective film for EUV light with a wavelength of 13 to 14 nm, a Mo/Si period laminated film formed by alternately laminating a Mo film and a Si film for about 40 periods is preferably used. In addition, as the multilayer reflective film used in the region of EUV light, there are Ru/Si periodic multilayer films, Mo/Be periodic multilayer films, Mo compound/Si compound periodic multilayer films, Si/Nb periodic multilayer films, Si/Mo periodic multilayer films /Ru periodic multilayer film, Si/Mo/Ru/Mo periodic multilayer film, Si/Ru/Mo/Ru periodic multilayer film, etc. The material may be appropriately selected according to the exposure wavelength. Generally, in order to protect the multilayer reflective film during patterning or pattern correction of the absorber film, it is preferable to provide a protective film (sometimes also referred to as a capping layer or a buffer film) on the multilayer reflective film 21 . As the material of such a protective film, in addition to silicon, ruthenium, or a ruthenium compound containing ruthenium and one or more elements of niobium, zirconium, and rhodium is used, and other than these, chromium-based materials are also used. Moreover, as a film thickness of a protective film, the range of about 1 nm - 5 nm is preferable, for example. The above-mentioned film forming method of the base layer, the multilayer reflective film 21 , and the protective film is not particularly limited, and generally, an ion beam sputtering method or a magnetron sputtering method is preferable. In the following, as one embodiment of the substrate 20 with the above-mentioned multilayer reflective film, as described above, the method of forming the multilayer reflective film 21 on the glass substrate 10 as shown in FIG. 6( a ) will be described. However, in the present invention, the substrate with the multi-layer reflective film is set to include the form in which the multilayer reflective film 21 and the protective film are sequentially formed on the glass substrate 10 , or the base layer is sequentially formed on the glass substrate 10 The layer, the multilayer reflective film 21, and the state of the protective film. Next, the above-mentioned first reference marks 22 are formed on the substrate 20 with the multilayer reflective film produced as described above. As explained above, the first fiducial marks 22 formed on the multilayer reflective film-attached substrate 20 are formed in the alignment region of the reflective mask base fabricated from the multilayer reflective film-attached substrate. Since the first fiducial mark 22 has already been described in detail, the overlapping description is omitted here. Here, at a specific position on the multilayer reflective film 21 of the multilayer reflective film-attached substrate 20, for example, an indentation (punching) using a micro indenter is used to form a first shape having a shape such as that shown in FIG. 3(a) above. 1 reference mark 22 (refer to FIG. 6(a)). The method of forming the above-mentioned first reference mark 22 is not limited to the method using the above-mentioned micro indenter. For example, when the cross-sectional shape of the fiducial mark is a concave shape, it can be formed by concave portion formation using focused ion beam, photolithography, laser light, machining marks generated by scanning a diamond needle, embossing by imprinting, etc. formed. Furthermore, when the cross-sectional shape of the fiducial mark is a concave shape, from the viewpoint of improving the detection accuracy of the defect inspection light, the cross-sectional shape formed so as to become wider from the bottom of the concave shape toward the surface side is preferable. . Furthermore, as described above, the first reference mark 22 is preferably formed on the boundary line of the pattern formation area on the main surface of the substrate 20 with the multilayer reflective film, or at any position outside the pattern formation area (refer to FIG. 1 ). ,figure 2). In this case, the fiducial mark can also be formed based on the edge, or after the fiducial mark is formed, the position of forming the fiducial mark can be specified by a coordinate measuring device. For example, in the case of processing the first fiducial mark 22 with a focused ion beam (FIB), the edge of the substrate with the multilayer reflective film can be identified by a secondary electron image, a secondary ion image, or an optical image. Moreover, in the case where the reference mark is processed by other methods (eg, indentation), it can be recognized by an optical image. For example, the edge coordinates of 8 positions on the four sides of the substrate with the multilayer reflective film are confirmed, and the inclination correction is performed, thereby positioning the origin (0, 0). In this case, the origin can be set arbitrarily, and it can be the corner or the center of the substrate. A fiducial mark is formed with the FIB at a specific position from the origin thus set with the edge as a reference. When such a fiducial mark formed on the basis of an edge is detected by a defect inspection apparatus, since the formation position information of the fiducial mark, that is, the distance from the edge is known, the forming position of the fiducial mark can be easily specified. Moreover, after forming the 1st fiducial mark 22 at an arbitrary position on the multilayer reflection film 21, the method of specifying the forming position of the fiducial mark with a coordinate measuring device can also be applied. This coordinate measuring device is used to measure the formation coordinates of the fiducial marks based on the edge. For example, a high-precision pattern position measuring device (LMS-IPRO4 manufactured by KLA-Tencor Corporation) can be used, and the specified fiducial mark forming coordinates become the formation of the fiducial mark. location information. Next, defect inspection is performed on the substrate 20 with the multilayer reflective film on which the first fiducial marks 22 are formed as described above. That is, with respect to the substrate 20 with the multilayer reflective film, a defect inspection including the above-mentioned first fiducial marks 22 is carried out by a defect inspection apparatus, the defects and position information detected by the defect inspection are acquired, and the first fiducial marks are obtained. 22, including defect information. In addition, the defect inspection in this case is performed on at least the whole surface of a pattern formation area. Next, on the entire surface of the above-mentioned multilayer reflective film 21 in the above-mentioned substrate 20 with multilayer reflective film (the protective film in the case where the surface of the multilayer reflective film includes the above-mentioned protective film), a film is formed to absorb the absorption of EUV light The body film 31 is used to prepare a reflective mask base (refer to FIG. 6(b) ). In addition, although not shown, you may provide a back surface conductive film on the side opposite to the side in which the multilayer reflection film etc. are formed of the glass substrate 10 . The absorber film 31 has a function of absorbing, for example, EUV light as exposure light, and in a reflective mask 40 (refer to FIG. 6( d )) fabricated using a reflective mask base, the multilayer reflective film 21 ( In the case where the above-mentioned protective film is included on the surface of the multilayer reflective film, there may be a desired difference in reflectivity between the reflected light generated by the protective film) and the reflected light generated by the absorber film pattern 31a. For example, the reflectance of the absorber film 31 to EUV light is selected between 0.1% or more and 40% or less. In addition to the above-mentioned difference in reflectivity, the reflection light generated by the above-mentioned multilayer reflective film 21 (in the case where the above-mentioned protective film is included on the surface of the multilayer reflective film, the above-mentioned protective film) may also be generated by reflected light and the absorber film pattern 31a. The reflected light has the desired phase difference. Furthermore, there is a desired value between the reflected light generated by the above-mentioned multilayer reflective film 21 (the protective film in the case where the above-mentioned protective film is included on the surface of the multilayer reflective film) and the reflected light generated by the absorber film pattern 31a. In the case of the phase difference, there is a case where the absorber film 31 in the reflective mask substrate is called a phase shift film. A desired phase is set between the reflected light generated by the above-mentioned multilayer reflective film 21 (the protective film in the case where the above-mentioned protective film is included on the surface of the multilayer reflective film) and the reflected light generated by the absorber film pattern 31a When the contrast is improved due to the difference, the retardation is preferably set in the range of 180°±10°, and the reflectance of the absorber film 31 is preferably set to 3% or more and 40% or less. The above-mentioned absorber film 31 may be a single layer or a laminated structure. In the case of a laminated structure, it may be a laminated film of the same material, or may be a laminated film of different kinds of materials. The material or composition of the laminated film can be changed stepwise and/or continuously in the film thickness direction. As the material of the above-mentioned absorber film 31, for example, tantalum (Ta) alone or a material containing Ta is preferably used. As materials containing Ta, materials containing Ta and B, materials containing Ta and N, materials containing Ta and B and further containing at least one of O and N, materials containing Ta and Si, materials containing Ta, Si and Materials containing N, materials containing Ta and Ge, materials containing Ta, Ge and N, materials containing Ta and Pd, materials containing Ta and Ru, and the like. Moreover, as a material other than Ta, Cr alone or a Cr-containing material, Ru alone or a Ru-containing material, Pd alone or a Pd-containing material, Mo alone or a Mo-containing material may be used. When the absorber film 31 is a laminated film, it can be set as the laminated structure which combined the above-mentioned materials. As a film thickness of the said absorber film 31, the range of about 30 nm - 100 nm is preferable, for example. The film-forming method of the absorber film 31 is not particularly limited, and generally, a magnetron sputtering method, an ion beam sputtering method, or the like is preferable. Next, the absorber film 31 is removed to form alignment on a specific portion of the surface of the reflective mask base, specifically, in the region including the first fiducial mark 22 formed on the multilayer reflective film-attached substrate 20 area 32 (refer to FIG. 6( c )). The alignment region 32 is formed in such a shape and size that the multilayer reflective film 21 including the region of the first reference mark 22 formed on the multilayer reflective film 21 is exposed. Moreover, the 2nd reference mark 42 is formed in the vicinity of the said 1st reference mark 22 in the upper part of the absorber film 31 (refer FIG.6(c)). As a method of removing the absorber film 31 corresponding to the region in order to form the alignment region 32 and the second fiducial mark 42, it is preferable to apply, for example, a photolithography method. Specifically, on the absorber film 31, a specific resist pattern is formed (the resist pattern is not formed in the region corresponding to the alignment region and the second fiducial mark), and the resist pattern is used as a mask to The absorber film corresponding to the alignment region and the second fiducial mark is dry-etched, and the absorber film 31 corresponding to the region is removed to form the alignment region 32 and the second fiducial mark 42 . As the etching gas in this case, the same etching gas used for patterning the absorber film 31 may be used. In this way, a reflective mask base 30 is produced, in which the multilayer reflective film 21 is formed in the outer peripheral region of the pattern forming region by removing the absorber film 31 and including the region of the first fiducial mark 22 . The exposed alignment region 32 and the second fiducial mark 42 (see FIG. 6( c )). Next, the alignment region 32 including the first fiducial mark 22 and the second fiducial mark 42 fabricated as described above were inspected using the same inspection light as the inspection apparatus for inspecting defects on the multilayer reflective film. In this case, with the second reference mark 42 as a reference, the first reference mark 22 formed in the alignment region 32 is inspected, and the position coordinates of the first reference mark 22 with the second reference mark 42 as a reference are detected. . Then, based on the defect information of the board|substrate 20 with a multilayer reflection film obtained by the said defect inspection, the defect information (1st defect map) based on the said 1st reference mark 22 is produced. Then, using the coordinates of the first fiducial mark 22 based on the second fiducial mark 42, the defect information (first defect map) is converted into defect information (second defect map) based on the second fiducial mark. The first fiducial mark 22 and the second fiducial mark 42 are preferably inspected using a defect inspection apparatus capable of detecting fine defects with high accuracy like the above-mentioned ABI apparatus. In the reflective mask base 30 of the present embodiment, the alignment region 32 for exposing the multilayer reflective film 21 including the region of the first fiducial mark 22 is formed in the outer peripheral region of the pattern forming region. Defect management of the reflective mask substrate 30 is performed using the alignment area 32 . That is, the alignment area 32 can be used to manage the relative coordinates of the first fiducial mark 22 and the second fiducial mark 42. As a result, the defect information based on the first fiducial mark 22 (the first fiducial mark 42) can be defect map) to obtain defect information (second defect map) based on the second reference mark 42 described above. Since the absorber film 31 is formed on the multilayer reflective film 21 , defects of the multilayer reflective film 21 are also reflected in the absorber film 31 , so that the above-mentioned second reference mark 42 can be managed with high precision through the alignment region 32 . Defects on the multilayer reflective film 21 . In the case of defect management of the reflective photomask substrate 30, especially by using the above-mentioned ABI device, even fine defects can be detected with high accuracy, and defect information with good accuracy can be obtained. In addition, the defect inspection on the surface of the reflective mask base 30 may not be performed, and in order to perform higher-precision defect management, the entire surface inspection or a partial inspection for shortening the inspection time may be performed. In the above-mentioned embodiment, the reflective mask base in which the first fiducial marks 22 serving as fiducials for defect information are formed in the above-mentioned alignment regions 32 has been described. However, as described above, if there is an actual defect that can be aligned by the inspection light of the defect inspection device in the above-mentioned alignment area 32, when inspecting the alignment area 32, the second reference mark 42 can be used as a reference for inspection. The coordinates of the actual defect. As described above, the reflective mask substrate 30 obtained by the manufacturing method of the first embodiment of the present invention is formed with a plurality of layers including, for example, the region of the first fiducial mark 22 in the outer peripheral region of the pattern forming region. The alignment region 32 where the reflective film is exposed. Therefore, the defect management of the reflective mask substrate 30 can be performed with high precision using the alignment region 32, specifically, using, for example, the first fiducial marks 22 formed in the alignment region 32, and as a result, In order to obtain defect information with good accuracy including defect location information. In addition, the reflection type photomask base 30 according to the first embodiment of the present invention also includes an aspect in which a hard mask film (also referred to as an etching mask film) is formed on the absorber film 31 . The hard mask film has a mask function when patterning the absorber film 31 , and includes a material having a different etching selectivity from the material of the uppermost layer of the absorber film 31 . For example, in the case where the absorber film 31 is Ta alone or a material containing Ta, the hard mask film may use a material such as chromium or a chromium compound, or silicon or a silicon compound. As the chromium compound, a material containing Cr and at least one element selected from the group consisting of N, O, C, and H can be mentioned. As the silicon compound, a material containing Si and at least one element selected from the group consisting of N, O, C, and H, or a metal silicon (metal silicide) or a metal silicon compound (metal silicide compound) containing a metal in silicon or a silicon compound can be exemplified ) and other materials. As the metal-silicon compound, a material containing metal, Si, and at least one element selected from the group consisting of N, O, C, and H can be exemplified. In addition, in the case where the absorber film 31 is a laminate film of a material containing Ta and a material containing Cr from the side of the multilayer reflective film 21, the material of the hard mask film can be selected from a material containing Cr with a different etching selectivity. Silicon, silicon compounds, metal silicides, metal silicide compounds, etc. In addition, the reflective mask base 30 of the first embodiment of the present invention may be configured as follows: the absorber film is constituted by a laminated film including the uppermost layer and other layers of materials having mutually different etching selectivities, And the uppermost layer is made to function as a hard mask film for other layers. As described above, the absorber film 31 in the reflective mask base 30 according to the first embodiment of the present invention is not limited to a single-layer film, and can be composed of a laminated film of the same material or a laminated film of different materials. Furthermore, it can be set as the structure of the laminated film of the absorber film of the above-mentioned laminated film or single-layer film, and a hard mask film. Moreover, in the reflection type mask base 30 of the 1st Embodiment of this invention, the aspect in which the resist film was formed on the said absorber film 31 is also included. Such a resist film is used when patterning an absorber film in a reflective mask substrate by photolithography. In addition, when a resist film is provided on the absorber film 31 with or without the above-mentioned hard mask film, the shape of the second reference mark 42 is transferred to the resist film. Furthermore, the second fiducial mark 42 transferred to the resist film has a contrast with the electron beam scanning of the electron beam drawing apparatus, and can be detected by the electron beam. At this time, since the relative coordinates are managed by the first fiducial mark 22 and the second fiducial mark 42, even if the shape of the first fiducial mark 22, which is relatively smaller than the second fiducial mark 42, is not transferred to the resist film High-precision rendering is also possible. Furthermore, in order to further improve the contrast with respect to electron beam scanning, it is also possible to form no resist film on the region including the second fiducial marks 42, or to remove the resist on the region including the second fiducial marks 42. The composition of the membrane. [Reflection type photomask according to the first embodiment] The present invention also provides a reflection type photomask in which the above-mentioned absorber film in the above-described configuration of the reflection type photomask substrate is patterned, and a method for producing the same. That is, a resist film is formed by coating and baking a resist for electron beam drawing on the above-mentioned reflective mask base 30, and the resist film is drawn and developed using an electron beam drawing apparatus, and the resist film is formed and transferred. The resist pattern corresponding to the printed pattern. After that, the absorber film 31 is patterned using the resist pattern as a mask to form the absorber film pattern 31a, thereby producing a reflective mask 40 (see FIG. 6( d )). The best method for patterning the absorber film 31 to be the transfer pattern in the reflective mask substrate 30 is photolithography. Furthermore, in the case of manufacturing a reflective photomask using the reflective photomask substrate comprising the above-mentioned hard mask film, the hard mask film can be finally removed. If the function of the reflective mask is affected, it may not be removed deliberately. The reflective mask 40 is formed with a multilayer reflective film 21 for reflecting EUV light on at least the substrate 10 , and an absorber film pattern 31 a for absorbing EUV light is formed on the multilayer reflective film 21 . Furthermore, in the outer peripheral region of the pattern forming region on the main surface of the reflective mask 40, an alignment region for exposing the multilayer reflective film 21 including the region serving as a reference for defect information on the multilayer reflective film 21 is formed. 32. Further, on the absorber film 31 in the vicinity of the alignment region 32, a second fiducial mark 42 that serves as a fiducial for the first fiducial mark 22 and is used for alignment in an electron beam drawing step in mask manufacturing is formed. The second reference mark 42 is formed relatively larger than the first reference mark 22 . Based on the defect information based on the second reference mark 42 described above, the absorber film 31 is patterned on the basis of the second reference mark 42 . In the present invention, as described above, the defect information including the defect position information in the multilayer reflective film with high accuracy can be acquired, so that the defect management of the reflective mask substrate can be performed with high accuracy. Therefore, in the manufacture of the photomask, based on the defect information, it can be compared with the pre-designed drawing data (mask pattern data), and the drawing data can be corrected (corrected) with high precision in a way to reduce the influence of defects. As a result, it is possible to obtain a reflective photomask with reduced defects in the final manufacture. Furthermore, by exposing the transfer pattern to the resist film on the semiconductor substrate using the reflective mask of the present invention, a high-quality semiconductor device with fewer defects can be produced. [Examples] Hereinafter, embodiments of the present invention will be described in more detail with reference to examples. (Example 1) The following glass substrate of SiO 2 -TiO 2 (size of about 152.0 mm×about 152.0 mm, thickness of about 6.35 mm) was prepared, which was prepared by using a double-sided polishing apparatus with cerium oxide abrasive particles or colloidal silicon oxide. The abrasive grains are polished in stages, and the surface of the substrate is surface-treated with low-concentration silicic acid. The surface roughness of the obtained glass substrate was 0.25 nm in root mean square roughness (Rq). In addition, the surface roughness was measured by atomic force microscope (AFM), and the measurement area was made into 1 micrometer x 1 micrometer. Next, using an ion beam sputtering device, with Si film (film thickness: 4.2 nm) and Mo film (film thickness: 2.8 nm) as one cycle, the main surface area of the glass substrate is layered for 40 cycles, and finally a Si film (film thickness: 2.8 nm) is formed. : 4 nm), and then a protective film (film thickness: 2.5 nm) containing Ru was formed thereon to obtain a substrate with a multilayer reflective film. Next, a first reference mark with a concave cross-sectional shape was formed on a specific portion of the surface of the multilayer reflective film of the above-mentioned multilayer reflective film-attached substrate according to the following surface shape. The formation of the first fiducial mark is performed by indentation (punching) using a micro indenter. Specifically, the first reference mark is formed by pressing a micro indenter against the multilayer reflective film with a specific pressure. After the formation of the first reference mark, washing is performed. In the present embodiment, the first reference mark is set as the shape shown in FIG. 3( a ) above, the size is set to be a circle with a diameter of 500 nm, and the depth is set to 60 nm. Next, with respect to the substrate surface with the multilayer reflective film, defect inspection including the above-mentioned first fiducial mark was performed by the above-mentioned ABI apparatus. In this defect inspection, the defect position information and defect size information of the convex part and the concave part are acquired, and defect information including the 1st reference mark is acquired. In addition, the reflectance of the protective film surface of the substrate with the multilayer reflective film was evaluated by an EUV reflectometer, and the result was 64%±0.2%, which was good. Next, a DC (Direct Current, direct current) magnetron sputtering apparatus was used to form a TaBN film (film thickness: 56 nm) and a TaBO film (film thickness: 14 nm) on the protective film of the substrate with the multilayer reflective film. The absorber film of the laminated film, and a CrN conductive film (film thickness: 20 nm) was formed on the back surface of the substrate with the multilayer reflective film to obtain a reflective mask base. Next, an alignment region from which the absorber film has been removed and a second reference mark are formed on a specific portion of the surface of the reflective mask base. In addition, the alignment region is formed in a shape and size that exposes the multilayer reflective film including the region of the first reference mark formed in the multilayer reflective film. As the second reference mark, the cross shape shown in FIG. 4( a ) described above is formed. The size of the second reference mark was a cross shape with a width of 5 μm and a length of 550 μm, and since the absorber film was completely removed, the depth was set to about 70 nm. In order to remove the absorber film in the alignment region and form the above-mentioned second fiducial mark, a photolithography method is applied. Specifically, a resist for electron beam drawing is applied by a spin coating method on the reflective photomask substrate on which the absorber film is formed, and is baked to form a resist film. On the absorber film, a specific resist pattern corresponding to the regions other than the alignment region and the second fiducial mark is formed, and the resist pattern is used as a mask to expose the absorber film by fluorine-based gas ( CF 4 gas) to etch away the TaBO film, and chlorine-based gas (Cl 2 gas) to etch and remove the TaBN film to form alignment regions and second fiducial marks. Furthermore, the resist pattern remaining on the absorber film was removed with hot sulfuric acid, and the reflective mask base in which the alignment region and the second fiducial mark were formed was obtained. For the obtained reflective photomask substrate, inspection of the first fiducial mark and the second fiducial mark in the alignment area was performed by the same ABI device as the defect inspection of the substrate with the multilayer reflective film. At this time, the first fiducial mark is inspected with reference to the second fiducial mark, and the positional coordinates of the first fiducial mark on the basis of the second fiducial mark are detected. By managing the relative coordinates between the second fiducial mark and the first fiducial mark, the second fiducial mark can be used as a reference, and defects on the multilayer reflective film can be managed with high precision. In this way, the defect information of the reflective mask substrate based on the second fiducial mark is obtained. Furthermore, by measuring the second fiducial mark with a coordinate measuring device (LMS-IPRO4 manufactured by KLA-Tencor Corporation), the calibration of the fiducial coordinates converted into the electron beam drawing step is performed. Next, an EUV reflective reticle is fabricated using the EUV reflective reticle substrate for which the defect information has been obtained. First, a resist for electron beam drawing is applied on an EUV reflective mask substrate by a spin coating method, and is baked to form a resist film. At this time, alignment is performed based on the second reference mark. Then, based on the defect information of the EUV reflective photomask substrate, it is compared with the pre-designed photomask pattern data, and corrected to the photomask pattern data that has no effect on the pattern transfer using the exposure device, or it is judged that the pattern transfer is affected. When there is an influence on printing, for example, the mask pattern data, etc., are corrected to add correction pattern data so as to hide defects under the pattern, and the above-mentioned resist film is drawn and developed by electron beams. , forming a resist pattern. In this embodiment, since defect information including defect position information with high precision is obtained, the mask pattern data can be corrected with high precision. Using the resist pattern as a mask, for the absorber film, the TaBO film is etched and removed by a fluorine-based gas (CF 4 gas), and the TaBN film is etched and removed by a chlorine-based gas (Cl 2 gas). An absorber film pattern is formed on the film. Furthermore, the resist pattern remaining on the absorber film pattern was removed with hot sulfuric acid to obtain an EUV reflective mask. The reflective mask thus obtained was set in an exposure apparatus, and pattern transfer was performed on the semiconductor substrate on which the resist film was formed. As a result, there was no defect in the transfer pattern caused by the reflective mask, and a satisfactory operation was achieved. Pattern transfer. (Reference Example 1) The same procedure as in Example 1 was performed except that the above-mentioned alignment region was not formed after the above-mentioned absorber film was formed on the substrate with the multilayer reflective film on which the first fiducial mark was formed. A reflective photomask substrate is fabricated. In the same manner as in Example 1, the defect inspection of the substrate with the multilayer reflective film was carried out with an ABI device, and the defect position information and defect size information were obtained. In addition, when the region on the absorber film on which the first reference mark was formed was inspected with an ABI device, the first reference mark formed on the multilayer reflective film had low contrast under EUV light, and could not be detected with high accuracy. Therefore, the accuracy of the obtained defect coordinates is poor, and it is difficult to obtain defect information of the reflective mask substrate. Next, in the same manner as in Example 1, an EUV reflection type mask was produced using this EUV reflection type mask base. The obtained EUV reflective photomask was set in an exposure apparatus, and pattern transfer was performed on the semiconductor substrate on which the resist film was formed. As a result, defects in the transfer pattern caused by the reflective photomask were observed. The reason is considered to be that, as described above, the accuracy of the defect coordinates of the first reference mark is poor, and it is difficult to obtain the defect information of the reflective photomask substrate. Therefore, in the pattern drawing step, the EUV-based reflective photomask substrate cannot be performed with high precision. The correction of the mask pattern data of the defect information, so that the defects on the multilayer reflective film cannot be accurately hidden under the absorber film pattern. In addition, in the said Example 1, the example which formed the 1st reference mark by the indentation by the micro indenter was given and demonstrated, but it is not limited to this. As also explained above, in addition to this method, concave portion formation by focused ion beam, photolithography, laser light, etc., machining marks generated by scanning a diamond needle, embossing by imprinting, etc. form. Moreover, in the said Example 1, the example where the 1st fiducial mark was formed in the alignment area|region was mentioned and demonstrated, but you may form a dummy defect instead of a 1st fiducial mark. Also, it may be an actual defect existing in the alignment area. Next, the second embodiment of the present invention will be described in detail. [Reflection type photomask base of the second embodiment] FIG. 7 is a plan view showing a reflection type photomask base of a second embodiment of the present invention. 8 is a plan view of a substrate with a multilayer reflective film that constitutes the base of the reflective mask shown in FIG. 7 . Furthermore, FIG. 10 is a schematic cross-sectional view showing the manufacturing steps of the reflective mask base and the reflective mask according to the second embodiment of the present invention. In addition, in the following description, the same reference number is attached|subjected to the same component as the component demonstrated in 1st Embodiment, and a detailed description may be abbreviate|omitted. As shown in FIG. 7 and FIG. 10 , in the reflective mask base 30 ′ according to the second embodiment of the present invention, a multilayer reflective film 21 for reflecting EUV light as exposure light is formed on at least the substrate 10 , and the multilayer reflective film 21 is An absorber film 31 for absorbing EUV light is formed on the film 21 (refer to FIG. 10( c )), and the pattern forming area on the main surface of the reflective mask substrate 30 ′ (in the area A indicated by the dotted line in FIG. 7 ) is formed. ) outer peripheral region, a plurality of alignment regions 32' are formed. The pattern forming area is the area on the absorber film 31 where the transfer pattern is to be formed, and is, for example, an area of 132 mm x 132 mm on the substrate of 6 inches square (about 152.0 mm x about 152.0 mm). The alignment region 32 ′ is a region in which the multilayer reflective film 21 is exposed including the region of the first reference mark 22 serving as a reference for defect information on the multilayer reflective film 21 . In the present embodiment, the first reference mark 22 is formed on the multilayer reflection film 21 . In addition, on the absorber film 31 in the vicinity of the pattern forming region side of the alignment region 32', a fiducial serving as a reference for the first fiducial mark 22 and used for alignment in the electron beam drawing step in mask manufacturing is formed. The second reference mark 42 . The second reference mark 42 is preferably formed relatively larger than the first reference mark 22 . That is, it is preferable that the width or length of the second fiducial mark 42 is larger than the width or length of the first fiducial mark 22 , and/or the depth or height of the cross-sectional shape of the second fiducial mark 42 is larger than the cross-sectional shape of the first fiducial mark 22 . the depth or height of the middle. In the present embodiment, as an example, the alignment region 32' and the second fiducial mark 42 are formed in the outer peripheral region of the pattern forming region of the reflective mask base 30', specifically, the reflective mask The four positions in the vicinity of the corners of the substrate 30' are not limited to the vicinity of the corners as long as they are the outer peripheral regions of the pattern forming region. In the present embodiment, the alignment region 32 ′ is a region where the multilayer reflective film 21 including the region of the first reference mark 22 formed on the multilayer reflective film 21 is exposed. Therefore, the position or the number of the alignment regions 32 ′ formed varies depending on the position or the number of the first reference marks 22 formed on the multilayer reflective film 21 . In addition, like 1st Embodiment, the number of objects of a 1st and 2nd reference mark is not specifically limited. As for the first and second reference marks, at least three are required, but as in the present embodiment, the number may be three or more. In addition, the alignment region 32' only needs to expose at least the region including the first fiducial marks 22 formed on the multilayer reflective film 21, and can be used for defect inspection of the substrate 20' with the multilayer reflective film. It is sufficient to detect the first fiducial mark 22 by means of a device, and under this condition, the shape or size of the alignment region 32' does not need to be particularly restricted. However, when the absorber film 31 is formed on the multilayer reflective film 21 to form a reflective mask base, the multilayer reflective film 21 is exposed without forming the absorber film 31 in the alignment region 32'. For example, a shielding member is provided to form the absorber film 31, thereby forming the above-mentioned alignment region 32'. Therefore, it is preferable to form the above-mentioned alignment region 32 ′ in the outer peripheral region of the pattern forming region of the reflective mask base, especially in the region including the outer peripheral edge of the substrate. For example, in the present embodiment, as shown in FIG. 7 , the alignment regions 32 ′ are formed in a triangular shape including two sides of the corners at four corners of the reflective mask base 30 ′. The lateral length L 3 of the outer peripheral portion of the triangular shape can be set to, for example, 6.0 mm to 18.0 mm, and the longitudinal length L 4 can be set to, for example, 6.0 mm to 18.0 mm. In the reflective mask base 30 ′ of the present embodiment, the non-filmed absorber film 31 is formed in the outer peripheral region of the pattern forming region so as to include the region including the first reference marks 22 formed on the multilayer reflective film 21 . The alignment region 32 ′ exposed by the multilayer reflective film 21 . Further, as described above, the absorber film 31 in the vicinity of the pattern formation region side of the alignment region 32' is formed with a reference to be the first reference mark 22 described above, and is used in the electron beam drawing step in mask manufacturing. The aligned second fiducial mark 42 . Therefore, the alignment area 32' can be used for defect management of the reflective mask substrate 30'. That is, the relative coordinates of the first reference mark 22 and the second reference mark 42 can be managed using the first reference mark 22 formed in the alignment region 32'. As a result, from the defect information (first defect map) based on the first fiducial mark 22, the defect information (second defect map) based on the second fiducial mark 42 can be obtained. In addition, when the above-mentioned ABI apparatus is used for defect management of the reflective mask substrate 30', since the multilayer reflective film 21 is exposed in the alignment region 32', the above-mentioned first reference marks 22 can be detected with high accuracy. Therefore, the management of the relative coordinates of the first reference mark 22 and the second reference mark 42 can be performed with high accuracy, and as a result, the reflective mask base 30' based on the second reference mark 42 can be performed well. defect management. The reflective mask substrate 30 ′ of the second embodiment of the present invention is preferably the above-mentioned ABI device using, for example, inspection light with a wavelength shorter than 100 nm (a wavelength close to the wavelength of the light source of exposure light (eg, EUV light)). A general defect inspection apparatus performs inspection of the first reference mark 22 and the second reference mark 42 . In addition, the substrate 20' with a multilayer reflective film including the first reference mark 22 may be applied to the substrate 20' with a multilayer reflective film (refer to FIG. 8 and FIG. 10(a)) on which the absorber film 31 has not been formed. defect inspection. In this way, the defect coordinates obtained by the defect inspection of the substrate 20 ′ with the multilayer reflective film can be consistent with the coordinates of the first reference mark 22 obtained with the second reference mark 42 as the reference, so there is no need to carry out the defect information of the two Coordinate conversion between them is more advantageous. The above-mentioned first reference mark 22 and second reference mark 42 are as described in the first embodiment with reference to FIGS. 3 to 5 , and thus overlapping descriptions are omitted. In the second embodiment, as an example, alignment regions 32' are formed at four corners of the reflective mask base 30'. Furthermore, the above-mentioned first reference marks 22 are formed on the multilayer reflective film 21 in the alignment region 32'. As mentioned above, the alignment region 32' is preferably formed in the outer peripheral region of the pattern forming region of the reflective mask substrate, especially the region including the outer peripheral edge of the substrate. Therefore, the above-mentioned first fiducial marks 22 of the multilayer reflective film 21 formed in the alignment area 32' are also preferably formed on the fiducial area corresponding to the pattern forming area on the main surface of the reflective mask substrate 30'. The area indicated by the dotted line A (refer to FIG. 8 ) on the main surface of the substrate 20 ′ of the multilayer reflective film is further outside. However, if the first reference mark 22 is too close to the outer peripheral edge of the substrate, it may intersect with other types of identification marks, which is not preferable. From this point of view, the first fiducial mark 22 (or the alignment region 32 ′ including the fiducial mark) is preferably formed on a substrate of 6 inches square (about 152.0 mm×about 152.0 mm), for example Within the area of 134 mm × 134 mm ~ 146 mm × 146 mm. As described in the first embodiment, the first reference mark 22 serves as a reference for the defect position in the defect information. Moreover, it is preferable that the said 1st reference mark 22 has a point symmetrical shape. Furthermore, in the case of using, for example, the above-mentioned ABI apparatus or the like that uses short-wavelength light having a wavelength shorter than 100 nm as defect inspection light for defect inspection, it is preferable to have 30 nm or more and 1000 nm in the scanning direction of the defect inspection light. The part of the width below nm. In the present embodiment, an alignment region 32 ′ for exposing the multilayer reflective film 21 including the region of the first fiducial mark 22 is formed in the outer peripheral region of the pattern forming region. Therefore, the 2nd fiducial mark 42 used as the reference|standard of the said 1st fiducial mark 22 is formed in the absorber film 31 near the pattern formation area side of this alignment area|region 32'. In the present embodiment, as a specific example, the second reference marks 42 are formed in the vicinity of the corner of the substrate and in the vicinity of the outer side of the corner of the pattern forming region. However, the position where the second fiducial mark 42 is formed is not limited to the embodiment shown in FIG. 7 as long as it is in the vicinity of the pattern forming region side of the alignment region 32 ′. For example, the positional relationship between the second fiducial mark 42 and the first fiducial mark 22 in the alignment region 32 ′ may be included in an area surrounded by 10 mm×10 mm. In the above-mentioned second embodiment, the case where the first fiducial marks 22 serving as a reference for defect information are formed in the above-mentioned alignment area 32' has been described. For the actual defect aligned with the inspection light of the defect inspection device, when the alignment region 32' is inspected, the coordinates of the actual defect based on the second reference mark 42 can be detected. That is, in the second embodiment, the first reference mark 22 may be an actual defect existing in the alignment region 32'. In the case of this embodiment, the defect inspection is performed on the substrate with the multilayer reflective film. If an actual defect is detected in the outer peripheral region of the pattern forming area, when the absorber film 31 is formed on the multilayer reflective film 21, it will not be The absorber film 31 may be formed on the region containing the actual defect on the multilayer reflective film 21 to form the alignment region 32'. As also explained in the first embodiment, conventionally, even if a defect inspection apparatus such as the above-mentioned ABI apparatus capable of detecting fine defects is to be used for high-precision defect inspection, the reflectance of EUV light on the absorber film is low due to the low reflectivity of EUV light on the absorber film. , so the signal strength of the defect is small, and it is difficult to obtain defect information with good accuracy, for example, including defect location information in the absorber film. On the other hand, as described above, in the reflective mask base of the second embodiment of the present invention, the above-mentioned first reference including the defect information formed on the multilayer reflective film is formed in the outer peripheral region of the pattern forming region. 1. Alignment area 32' exposed by the multilayer reflective film in the area of the fiducial mark 22. Therefore, if the defect management of the reflective mask base is performed using the alignment region 32', more specifically, for example, the alignment using the first fiducial marks 22 formed in the alignment region 32', the reflective type can be performed. High-precision defect management of photomask substrates. For example, the relative coordinates of the first fiducial mark 22 and the second fiducial mark 42 can be managed using the first fiducial mark 22 formed in the alignment region 32 ′, so the first fiducial mark 22 can be used according to the Defect information (first defect map) based on the reference mark 42 is obtained as defect information (second defect map) based on the above-mentioned second reference mark 42 . FIG. 9 is a plan view showing a reflection type photomask base according to a third embodiment of the present invention. In the embodiment shown in FIG. 9, the alignment region 33 including the first fiducial mark 22 is formed in a rectangular shape including both sides of the corner at four corners of the substrate. The horizontal length of the rectangular region can be set to, for example, 3.0 mm to 9.0 mm, and the vertical length can be set to, for example, 3.0 mm to 9.0 mm. As described above, as long as the first fiducial mark 22 can be detected by the defect inspection apparatus, under this condition, the shape and size of the alignment region 33 are not limited by the above-mentioned embodiment. Moreover, in this embodiment, the 2nd fiducial mark 42 used as the reference|standard of the said 1st fiducial mark 22 is formed also in the absorber film 31 of this alignment area|region 33 of the pattern formation area side vicinity. The configuration other than this is the same as that of the second embodiment of FIG. 7 described above, and thus the repeated description is omitted. In this embodiment, the above-mentioned alignment region 33 can also be used for defect management of the reflective mask substrate 30'. That is, the relative coordinates of the first reference mark 22 and the second reference mark 42 can be managed using the first reference mark 22 formed in the alignment region 33 . As a result, from the defect information (first defect map) based on the first fiducial mark 22, the defect information (second defect map) based on the second fiducial mark 42 can be obtained. Furthermore, when the above-mentioned ABI apparatus is used for defect management of the reflective mask base 30', since the multilayer reflective film 21 is exposed in the alignment region 33, the above-mentioned first reference mark 22 can be detected with high accuracy. Therefore, the management of the relative coordinates of the first fiducial mark 22 and the second fiducial mark 42 can be performed with high precision, and the defect management of the reflective mask base 30 ′ based on the second fiducial mark 42 can be performed well. . [Manufacturing Method of Reflective Mask Base of Second and Third Embodiments] Next, the manufacturing method of the reflective mask base of the second embodiment of the present invention will be described. This description can also be applied to the third embodiment. The manufacturing method of the reflective mask base of the second embodiment of the present invention is the above-mentioned configuration 14, characterized in that a multilayer reflective film for reflecting EUV light is formed on at least the substrate, and the multilayer reflective film is formed on the multilayer reflective film. A method for manufacturing a reflective photomask base having an absorber film absorbing EUV light formed, comprising the steps of: forming the multilayer reflective film on the substrate to form a substrate with the multilayer reflective film; The substrate is inspected for defects; and the absorber film is formed on the multilayer reflective film of the substrate with the multilayer reflective film to form a reflective mask base; and the film forming of the absorber film includes the following steps: patterning In the outer peripheral region of the formation region, an alignment region in which the above-mentioned absorber film is not formed and the region including the first reference mark serving as a reference for defect information on the above-mentioned multi-layer reflective film is formed to expose the above-mentioned multilayer reflective film (hereinafter, sometimes Also referred to as "alignment region forming step"); and the manufacturing method further includes the step of: forming a first reference mark of the first reference mark in the vicinity of the pattern forming region side of the alignment region in the absorber film. 2. fiducial marks; and using the above-mentioned alignment area to perform defect management of the above-mentioned reflective photomask substrate. 10 is a cross-sectional view showing a manufacturing process of a reflection type photomask substrate and a reflection type photomask according to a second embodiment of the present invention. Hereinafter, description will be made based on the steps shown in FIG. 10 . First, as a substrate, a multilayer reflective film 21 that reflects exposure light such as EUV light is formed on the glass substrate 10 to form a multilayer reflective film-attached substrate 20' (refer to FIG. 10(a)). In the case of EUV exposure, the substrate is preferably a glass substrate. In particular, in order to prevent the deformation of the pattern caused by the heat during exposure, as in the first embodiment, it is preferable to use a substrate having a thickness of 0±1.0×10 − Within the range of 7 /°C, more preferably one with a low thermal expansion coefficient within the range of 0±0.3×10 -7 /°C. As a material having a low thermal expansion coefficient in this range, for example, SiO 2 -TiO 2 based glass, multi-component based glass ceramics, and the like can be used. As described in the first embodiment, from the viewpoint of at least improving pattern transfer accuracy and positional accuracy, the main surface of the glass substrate 10 on the side where the transfer pattern is to be formed is surface-processed so as to have high flatness. . In the case of EUV exposure, in an area of 142 mm×142 mm on the main surface of the glass substrate 10 on the side where the transfer pattern is to be formed, the flatness is preferably 0.1 μm or less, particularly preferably 0.05 μm or less. In addition, the main surface opposite to the side where the transfer pattern is to be formed is the surface that is electrostatically attracted when installed in the exposure device, and the flatness in the area of 142 mm×142 mm is 0.1 μm or less, preferably 0.05 μm the following. Further, as the glass substrate 10, as described above, a material having a low thermal expansion coefficient such as SiO 2 -TiO 2 based glass is preferably used, but such a glass material is difficult to achieve in terms of surface roughness, for example, uniformity by precision grinding. The root square roughness (Rq) is high smoothness of 0.1 nm or less. Therefore, in order to reduce the surface roughness of the glass substrate 10 or reduce the defects on the surface of the glass substrate 10 , a base layer can also be formed on the surface of the glass substrate 10 . As the material of the base layer, it is not necessary to have light transmittance with respect to the exposure light, and it is preferable to select a material that can obtain high smoothness and improve defect quality when the surface of the base layer has been precisely ground. For example, Si or a silicon compound containing Si (eg, SiO 2 , SiON, etc.) is suitable for the material of the base layer because it obtains higher smoothness when it has been precisely ground, so that the defect quality becomes good. The material of the base layer is particularly preferably Si. The surface of the base layer is preferably a surface that has been precisely polished so as to have smoothness required as a substrate for a reflection type photomask base. The surface of the base layer is preferably precision-polished so that the root mean square roughness (Rq) is 0.15 nm or less, particularly preferably 0.1 nm or less. Furthermore, in consideration of the influence on the surface of the multilayer reflective film 21 formed on the base layer, the surface of the base layer is desirably so that Rmax/Rq is preferably 2 to 2 in relation to the maximum height (Rmax). 10, it is particularly preferable to perform precision grinding in the manner of 2 to 8. The thickness of the base layer is preferably in the range of, for example, 10 nm to 300 nm. As described in the first embodiment, the multilayer reflective film 21 is a multilayer film in which low-refractive-index layers and high-refractive-index layers are alternately laminated, and usually, heavy elements or their compounds are alternately laminated for about 40 to 60 periods. A multilayer film made of thin films and thin films of light elements or their compounds. The specific example of the multilayer reflection film 21 is the same as that described in the first embodiment, so the description is omitted. Like the first embodiment, in order to protect the multilayer reflective film during patterning or pattern correction of the absorber film, it is preferable to provide a protective film (sometimes also referred to as a capping layer) on the multilayer reflective film 21. or buffer film). As the material of such a protective film, in addition to silicon, ruthenium, or a ruthenium compound containing ruthenium and one or more elements of niobium, zirconium, and rhodium is used, and other than these, chromium-based materials are also used. Moreover, as a film thickness of a protective film, the range of about 1 nm - 5 nm is preferable, for example. As described in the first embodiment, the above-mentioned film forming method of the base layer, the multilayer reflective film 21, and the protective film is not particularly limited, but generally, an ion beam sputtering method or a magnetron sputtering method is preferable. Hereinafter, as an embodiment of the above-mentioned substrate 20' with a multilayer reflective film, as described above, the case where the multilayer reflective film 21 is formed on the glass substrate 10 as shown in FIG. 10(a) will be described. In this embodiment, The substrate 20 ′ with the multi-layer reflective film is also set to include the above-mentioned multilayer reflective film 21 and the protective film formed sequentially on the glass substrate 10 , or the above-mentioned base layer and the multi-layer reflective film are sequentially formed on the glass substrate 10 . The state of the film 21 and the protective film. In addition, from the viewpoint of suppressing dust generation at the edge of the substrate, when the multilayer reflective film 21 is formed on the glass substrate 10, it may be formed in an area of a specific width (for example, about several mm) from the outer peripheral edge of the substrate to the inside. The multilayer reflective film 21 was not formed. This aspect is also included in this embodiment. Next, the above-mentioned first reference mark 22 is formed on the substrate 20' with the multilayer reflective film produced as described above. As explained above, the first fiducial marks 22 formed on the multilayer reflective film-attached substrate 20' are formed in the alignment region of the reflective mask base fabricated from the multilayer reflective film-attached substrate. The first fiducial mark 22 has already been described, and thus overlapping description is omitted here. Here, at a specific position on the multilayer reflective film 21 of the multilayer reflective film-attached substrate 20', for example, an indentation (punching) using a micro indenter is used to form a shape as shown in, for example, FIG. 3(a) above. The first reference mark 22 (refer to FIG. 10(a)). As in the first embodiment, the method of forming the first reference mark 22 is not limited to the method using the micro indenter described above. For example, when the cross-sectional shape of the fiducial mark is a concave shape, it can be formed by concave portion formation using focused ion beam, photolithography, laser light, machining marks generated by scanning a diamond needle, embossing by imprinting, etc. formed. Furthermore, when the cross-sectional shape of the fiducial mark 22 is a concave shape, from the viewpoint of improving the detection accuracy of the defect inspection light, the cross-section formed so as to become wider from the bottom of the concave shape toward the surface side is preferable. shape. Also, as described above, the first reference mark 22 is formed at an arbitrary position in the region on the outer peripheral side than the pattern forming region on the main surface of the substrate 20' with the multilayer reflective film (see FIGS. 7, 8, and 8). 9) However, in this case, the first fiducial mark may be formed based on the edge, or after the first fiducial mark is formed, the position of forming the fiducial mark may be specified with a coordinate measuring device. For example, in the case of processing the first fiducial mark 22 by a focused ion beam (FIB), the edge of the substrate 20' with the multilayer reflective film can be identified by a secondary electron image, a secondary ion image, or an optical image. Moreover, when processing the 1st reference mark 22 by another method (for example, indentation), it can recognize by an optical image. For example, the edge coordinates of 8 positions on the four sides of the substrate 20' with the multilayer reflective film are confirmed, and the inclination correction is performed, thereby positioning the origin (0, 0). In this case, the origin can be set arbitrarily, and it can be the corner or the center of the substrate. The first reference mark 22 is formed by FIB at a specific position from the origin set with the edge as a reference. When the defect inspection apparatus detects the first fiducial mark 22 formed on the basis of the edge, since the formation position information of the fiducial mark, that is, the distance from the edge is known, the fiducial mark forming position can be easily specified. Moreover, after forming the 1st fiducial mark 22 at an arbitrary position on the multilayer reflection film 21, the method of specifying the forming position of the fiducial mark with a coordinate measuring device can also be applied. This coordinate measuring instrument measures the formation coordinates of the first fiducial mark based on the edge. For example, a high-precision pattern position measuring device (LMS-IPRO4 manufactured by KLA-Tencor) can be used, and the specified fiducial mark forming coordinates become the fiducial mark. The resulting location information. Next, defect inspection is performed on the substrate 20' with the multilayer reflection film on which the first fiducial marks 22 are formed as described above. That is, with respect to the substrate 20 ′ with the multilayer reflective film, the defect inspection including the first reference mark 22 is carried out by the defect inspection apparatus, and the defect and position information detected by the defect inspection are obtained, and the first reference mark 22 is obtained. Defect information including fiducial mark 22. In addition, the defect inspection in this case is performed on at least the whole surface of a pattern formation area. As a defect inspection device for the substrate 20' with a multilayer reflective film, it is preferable to use the above-mentioned EUV exposure mask, substrate/substrate defect inspection device "MAGICS M7360" manufactured by Lasertec, whose inspection light source wavelength is 266 nm. The EUV mask/substrate defect inspection equipment "Teron600 series, such as Teron610" manufactured by KLA-Tencor with a wavelength of 193 nm, ABI equipment with the wavelength of the inspection light source set to 13.5 nm of the wavelength of the exposure light source, etc. In particular, it is preferable to perform high-precision defect inspection using a defect inspection apparatus such as the above-mentioned ABI apparatus capable of detecting fine defects. Next, an absorber film for absorbing EUV light is formed on the above-mentioned multilayer reflective film 21 (the protective film when the above-mentioned protective film is included on the surface of the multilayer reflective film) in the above-mentioned multilayer reflective film-attached substrate 20' 31. Fabricate a reflective mask substrate (refer to FIG. 10(b)). In addition, although not shown, you may provide a back surface conductive film on the side opposite to the side in which the multilayer reflection film etc. are formed of the glass substrate 10 . In the present embodiment, when the absorber film 31 is formed on the multilayer reflective film 21, a specific portion of the main surface of the multilayer reflective film-attached substrate 20', specifically, is formed on a specific portion of the main surface of the multilayer reflective film-attached substrate 20'. In the region of the first fiducial mark 22 of the film substrate 20', an alignment region 32' in which the absorber film 31 is not formed and the multilayer reflective film 21 including the region of the first fiducial mark 22 is exposed is formed (see FIG. 10(b). )). The alignment region 32 ′ is formed in such a shape and size that the multilayer reflective film 21 including the region of the first reference mark 22 formed in the multilayer reflective film 21 is exposed. In the step of forming the alignment region 32 ′, the absorber film 31 formed by the shielding member is provided so that the multilayer reflective film 21 is exposed without forming the absorber film 31 . For example, as shown in FIG. 11 , a shielding member 50 is provided on a specific portion of the main surface of the substrate 20 ′ with the multilayer reflective film attached to the alignment region 32 ′ to be separated from the peripheral portion of the substrate, for example, by sputtering. Absorber film 31 . In the vicinity of the peripheral edge of the substrate, the shielding member 50 is made to cover the multilayer reflective film 21 in the region including the first fiducial marks 22. Therefore, the shape, size, and shielding length d of the shielding member 50 are considered to be the alignment region 32' to be formed. The shape, size, etc. can be determined. In addition, the separation distance h between the main surface of the glass substrate 10 and the shielding member 50 may also be appropriately adjusted, and is usually preferably set to about 9 mm. By using the alignment region forming step of the above film forming method, in the region including the first reference mark 22 formed on the multilayer reflective film-attached substrate 20 ′, the unfilmed absorber film 31 is formed so as to include the first reference mark 22 . 1. The alignment area 32' exposed by the multilayer reflective film 21 in the area of the fiducial mark 22. The above-mentioned absorber film 31 is formed on the substrate 20' with the multilayer reflective film except the alignment region 32'. Further, as a method of forming the alignment region 32', for example, a method of forming an absorber film on the entire surface of the substrate with the multilayer reflective film in advance, and setting the absorber film in the region of the alignment region is also conceivable. It is removed (lifted off) to form an alignment region that exposes the multilayer reflective film in the region including the fiducial mark. However, in this method, there is a risk of deformation of the fiducial mark due to removal of the absorber film in the alignment region. In addition, there is a possibility of dust generation when the absorber film is removed. On the other hand, according to the alignment region forming step in the present embodiment described above, the uncoated absorber film 31 is formed in the region including the first fiducial mark 22 formed on the multilayer reflective film-attached substrate 20'. The alignment region 32' of the multilayer reflective film 21 including the region of the first fiducial mark 22 is exposed, thereby avoiding the risk of deformation of the fiducial mark, and the above-mentioned problem of dust generation. Since the absorber film 31 is completely the same as that of the first embodiment, the overlapping description is omitted. Next, the 2nd reference mark 42 is formed in the said absorber film 31 (refer FIG.10(c)). The second reference mark 42 serves as a reference when performing relative coordinate management with the first reference mark 22, and is formed on the absorber film 31 near the pattern forming region side of the alignment region 32'. In the embodiment of FIG. 7 , as a specific example, the second fiducial marks 42 are formed in the vicinity of the first fiducial marks 22 in the corners of the substrate, and in the vicinity of the outer side of the corner of the pattern forming region. The second fiducial mark 42 has already been described in detail, so repeated description is omitted here. As a method of removing the absorber film 31 corresponding to the region in order to form the second fiducial mark 42, it is preferable to apply a focused ion beam, for example. In addition, a photolithography method can also be applied. In this case, a specific resist pattern is formed on the absorber film 31 (the resist pattern is not formed in the region corresponding to the second fiducial mark), and the resist pattern is used as a mask to make the 2 The exposed absorber film in the region corresponding to the reference mark is dry-etched, and the absorber film 31 corresponding to the region is removed to form the second reference mark 42 . As the etching gas in this case, the same etching gas used for patterning the absorber film 31 may be used. As described above, a reflective mask base 30 ′ is produced, which is formed in the outer peripheral region of the pattern forming region and on which the absorber film 31 is not formed to include the first reference mark 22 The alignment region 32' and the second fiducial mark 42 (see FIG. 10(c) ) are exposed by the multilayer reflective film 21 in the region. Next, the alignment region 32' including the first fiducial mark 22 and the second fiducial mark 42 produced as described above are inspected using a defect inspection apparatus. In this case, it is preferable to use the same inspection light as an inspection apparatus for inspecting defects on the multilayer reflective film. The reason is that the coordinate accuracy obtained by the two inspection devices can be the same. In this case, the first fiducial mark 22 formed in the alignment region 32 ′ is inspected with the second fiducial mark 42 as the reference, and the position of the first fiducial mark 22 with the second fiducial mark 42 as the reference is detected. coordinate. Then, based on the defect information of the multilayer reflective film-attached substrate 20' obtained by the above-mentioned defect inspection, defect information (first defect map) based on the above-mentioned first reference mark 22 is produced, and the second reference mark is used as the reference. 42 is the coordinates of the first fiducial mark 22, and the above-mentioned defect information (first defect map) is converted into defect information (second defect map) based on the second fiducial mark. The first fiducial mark 22 and the second fiducial mark 42 are preferably inspected using a defect inspection apparatus capable of detecting fine defects with high accuracy, such as the above-mentioned ABI apparatus. Furthermore, for the alignment region 32 ′ including the first fiducial mark 22 and the second fiducial mark 42 , instead of using a defect inspection device, the above-mentioned coordinate measuring device can be used for inspection, and the second fiducial mark 42 is detected as The position coordinates of the first reference mark 22 of the reference. In the reflective mask substrate 30' obtained by this embodiment, an alignment region 32 for exposing the multilayer reflective film 21 including the region of the first fiducial mark 22 is formed in the outer peripheral region of the pattern forming region. ', so the alignment area 32' can be used for defect management of the reflective mask substrate 30'. That is, the alignment area 32' can be used to manage the relative coordinates of the first reference mark 22 and the second reference mark 42 described above. As a result, from the defect information (first defect map) based on the first fiducial mark 22, the defect information (second defect map) based on the second fiducial mark 42 can be obtained. Since the absorber film 31 is formed on the multilayer reflective film 21, the defects of the multilayer reflective film 21 are also reflected in the absorber film 31, so that the above-mentioned second reference mark 42 can be used as a reference with high precision through the alignment region 32'. Defects on the multilayer reflective film 21 are managed. In the case of defect management of the reflective photomask substrate 30, especially by using the above-mentioned ABI device, even fine defects can be detected with high accuracy, and defect information with good accuracy can be obtained. Moreover, according to this embodiment, since the deformation of the first fiducial mark 22 and the like do not occur due to the formation of the above-mentioned alignment region 32 ′, an alignment error using the first fiducial mark 22 does not occur. In addition, the defect inspection on the surface of the reflective mask base 30' may not be performed, and in order to perform higher-precision defect management, the entire surface inspection or the partial inspection for shortening the inspection time may be performed. In the above-mentioned second and third embodiments, the reflective mask base in which the first fiducial mark 22 serving as a fiducial for defect information is formed in the above-mentioned alignment region 32' has been described. However, as described above, if there is an actual defect that can be aligned by the inspection light of the defect inspection device in the alignment area 32', the first reference mark 22 may also be such an actual defect, and the inspection pair When the quasi area 32' is located, the coordinates of the actual defect with the second fiducial mark 42 as a reference can be checked. As described above, the reflective mask base 30 ′ obtained by the manufacturing method of the second and third embodiments of the present invention is formed in the outer peripheral region of the pattern forming region, and the first reference mark 22 including the above-mentioned first reference mark 22 is formed. The alignment region 32' is exposed by the multilayer reflective film 21 in the region. Therefore, defect management of the reflective mask substrate 30' can be performed with high precision using the alignment region 32', specifically, using, for example, the first fiducial marks 22 formed in the alignment region 32'. defect management. As a result, accurate defect information including defect position information can be obtained. Moreover, the management of the relative coordinates of the first fiducial mark 22 and the second fiducial mark 42 described above can be performed using the alignment area 32 ′ and the second fiducial mark 42 . Also, similarly to the first embodiment, the reflective mask bases 30' of the second and third embodiments of the present invention also include a hard mask film (also referred to as a hard mask film) formed on the absorber film 31. etch mask film). The hard mask film has a mask function when patterning the absorber film 31 , and includes a material having a different etching selectivity from the material of the uppermost layer of the absorber film 31 . The material of the hard mask film is as described in the first embodiment. In addition, the reflective mask substrate 30' of the second and third embodiments of the present invention may be configured as a laminate film including the uppermost layer of materials having mutually different etching selectivities and other layers. An absorber film, and the uppermost layer has a function as a hard mask film for other layers. As described above, the absorber film 31 in the reflective mask substrate 30' according to the second and third embodiments of the present invention is not limited to a single-layer film, and can be a laminated film of the same material or a laminated film of different types of materials. Furthermore, it can be set as the structure of the laminated film of the absorber film of the above-mentioned laminated film or monolayer film, and a hard mask film. Moreover, in the reflection type mask base 30' of the 2nd and 3rd embodiment of this invention, the aspect in which the resist film was formed on the said absorber film 31 is also included. Such resist films are used when patterning absorber films in reflective mask substrates by photolithography. In addition, when a resist film is provided on the absorber film 31 with or without the above-mentioned hard mask film, the shape of the second reference mark 42 is transferred to the resist film. Furthermore, the second fiducial mark 42 transferred to the resist film has a contrast with the electron beam scanning of the electron beam drawing apparatus, and can be detected by the electron beam. At this time, since the relative coordinates are managed by the first fiducial mark 22 and the second fiducial mark 42, even if the shape of the first fiducial mark 22, which is relatively smaller than the second fiducial mark 42, is not transferred to the resist film High-precision rendering is also possible. Furthermore, in order to further improve the contrast with respect to electron beam scanning, it is also possible to form no resist film on the region including the second fiducial marks 42, or to remove the resist on the region including the second fiducial marks 42. The composition of the membrane. [Second and Third Embodiments of Reflective Masks] The present invention also provides a reflective mask in which the absorber film is patterned in the reflective mask substrate having the configuration shown in FIG. 7 and a method for manufacturing the same. This description can also be applied to the third embodiment. That is, a resist film is formed by coating and baking the resist for electron beam drawing on the above-mentioned reflective mask base 30 ′. Next, the resist film is drawn and developed using an electron beam drawing apparatus, and a resist pattern corresponding to the transfer pattern is formed on the resist film. Then, the absorber film 31 is patterned using the resist pattern as a mask to form the absorber film pattern 31a, thereby producing a reflective mask 40' (refer to FIG. 10( d )). In the present embodiment, the absorber film 31 can be patterned by correcting the drawing pattern based on, for example, defect information based on the second reference mark 42 in the reflective mask base 30 ′ described above. The method for patterning the absorber film 31 to be the transfer pattern in the reflective mask substrate 30' is preferably the above-mentioned photolithography method. Furthermore, in the case of manufacturing a reflective photomask using the reflective photomask substrate comprising the above-mentioned hard mask film, the hard mask film can be finally removed, but if the hard mask film remains, it will not be used as a reflection If the function of the photomask is affected, it may not be removed deliberately. The above-mentioned reflective mask 40 ′ obtained in the above manner has at least a multilayer reflective film 21 for reflecting EUV light formed on the substrate 10 , an absorber film pattern 31 a for absorbing EUV light is formed on the multilayer reflective film 21 , and An alignment region 32' in which the absorber film 31 is not formed and the multilayer reflective film 21 in the region including the first fiducial mark 22 is exposed is formed in the outer peripheral region of the pattern forming region on the main surface of the reflective mask 40', and The second fiducial mark 42 is formed in the vicinity of the pattern formation area side of the alignment area 32'. In the second and third embodiments, as described above, the defect information including the defect position information in the multilayer reflective film with high accuracy can be acquired, and the defect management of the reflective mask base can be performed with high accuracy. Therefore, in the manufacture of the photomask, the defect information can be compared with the pre-designed drawing data (mask pattern data), and the drawing data can be corrected (corrected) with high precision in a way to reduce the influence caused by the defect. As a result, it is possible to reduce defects in the reflective photomask 40' finally manufactured. Furthermore, by using the above-mentioned reflective mask 40' to expose the transfer pattern to the resist film on the semiconductor substrate, it is possible to manufacture a high-quality semiconductor device with fewer defects. [Examples] Hereinafter, the second and third embodiments of the present invention will be described in more detail by way of examples. (Example 2) The following SiO 2 -TiO 2 glass substrate (size of about 152.0 mm×about 152.0 mm, thickness of about 6.35 mm) was prepared, which was prepared by using a double-sided polishing device with cerium oxide abrasive particles or colloidal silicon oxide. The abrasive grains are polished in stages, and the surface of the substrate is surface-treated with low-concentration silicic acid. The surface roughness of the obtained glass substrate was 0.25 nm in root mean square roughness (Rq). In addition, the surface roughness was measured by atomic force microscope (AFM), and the measurement area was made into 1 micrometer x 1 micrometer. Next, using an ion beam sputtering device, with Si film (film thickness: 4.2 nm) and Mo film (film thickness: 2.8 nm) as one cycle, the main surface area of the glass substrate is layered for 40 cycles, and finally a Si film (film thickness: 2.8 nm) is formed. : 4 nm), and then a protective film (film thickness: 2.5 nm) containing Ru was formed thereon to obtain a substrate with a multilayer reflective film. Next, a first reference mark with a concave cross-sectional shape was formed on a specific portion of the multilayer reflective film surface of the above-mentioned multilayer reflective film-attached substrate (the position shown in FIG. 8 above) according to the following surface shape. The formation of the first fiducial mark is performed by indentation (punching) using a micro indenter. Specifically, the first reference mark is formed by pressing a micro indenter against the multilayer reflective film with a specific pressure. After the formation of the first reference mark, washing is performed. In this Example 2, as the first reference mark, the shape shown in FIG. 3( a ) was used, the size was a circle with a diameter of 500 nm, and the depth was 60 nm. Next, with respect to the substrate surface with the multilayer reflective film, defect inspection including the above-mentioned first fiducial mark was performed by the above-mentioned ABI apparatus. In this defect inspection, the defect position information and defect size information of the convex part and the concave part are acquired, and defect information including the 1st reference mark is acquired. In addition, the reflectance of the protective film surface of the substrate with the multilayer reflective film was evaluated by an EUV reflectometer, and the result was 64%±0.2%, which was good. Next, using a DC magnetron sputtering apparatus, on the protective film of the above-mentioned substrate with a multilayer reflective film, a multilayer film comprising a TaBN film (film thickness: 56 nm) and a TaBO film (film thickness: 14 nm) is formed to absorb absorption In addition, a CrN conductive film (film thickness: 20 nm) was formed on the back surface of the substrate with the multilayer reflective film to obtain a reflective mask base. Furthermore, when forming the above-mentioned absorber film 31, in order not to be in a specific part of the main surface of the above-mentioned multilayer reflective film-attached substrate 20', specifically, the above-mentioned area including the above-mentioned multilayer reflective film-attached substrate 20' is formed. The absorber film 31 is formed in the region of the first reference mark 22 , and as described in FIG. 11 , a shielding member is provided to be spaced apart from the peripheral portion of the substrate, and the absorber film 31 is formed into a film. Since the masking member covers the multilayer reflective film in the region including the first fiducial mark, the shape, size, and masking length d of the masking member are determined in consideration of the shape and size of the alignment region to be formed. In the second embodiment, the shape and size are the same as those described in FIG. 11 . In addition, the separation distance h between the main surface of the glass substrate and the shielding member is also appropriately adjusted. By the above method, a non-filmed absorber film is formed in the region including the first fiducial mark, and the alignment region where the multilayer reflective film in the region including the first fiducial mark is exposed is attached, and the multilayer reflection is attached to the region other than the alignment region. On the substrate of the film, the above-mentioned absorber film is formed into a film. In addition, deformation of the first fiducial mark formed in the alignment region and the like did not occur. Next, a second reference mark is formed on a specific portion (the position shown in FIG. 7 ) on the surface of the reflective mask base. As a 2nd reference mark, it is formed so that it may become the cross shape shown to the said FIG.4(a). The size of the second reference mark was a cross shape with a width of 5 μm and a length of 550 μm, and since the absorber film was completely removed, the depth was set to about 70 nm. In order to form the above-mentioned second fiducial mark, a focused ion beam is used. The conditions at this time were set as the acceleration voltage of 50 kV and the ion beam current value of 20 pA. After the formation of the second reference mark, washing is performed. In this way, a reflective mask base on which the second fiducial mark was formed was obtained. For the obtained reflective photomask substrate, inspection of the first fiducial mark and the second fiducial mark in the alignment area was performed by the same ABI device as the defect inspection of the substrate with the multilayer reflective film. At this time, the first fiducial mark is inspected with reference to the second fiducial mark, and the positional coordinates of the first fiducial mark on the basis of the second fiducial mark are detected. Since the multilayer reflective film is exposed in the alignment area, the first fiducial mark in the alignment area can be accurately detected by the ABI device. By managing the relative coordinates between the second fiducial mark and the first fiducial mark, the second fiducial mark can be used as a reference, and defects on the multilayer reflective film can be managed with high precision. In this way, the defect information of the reflective mask substrate based on the second fiducial mark is obtained. Furthermore, by measuring the second fiducial mark with a coordinate measuring device (LMS-IPRO4 manufactured by KLA-Tencor Corporation), the calibration of the fiducial coordinates converted into the electron beam drawing step is performed. Next, an EUV reflective reticle is fabricated using the EUV reflective reticle substrate for which the defect information has been obtained. First, a resist for electron beam drawing is applied on an EUV reflective mask substrate by a spin coating method, and is baked to form a resist film. At this time, alignment is performed based on the second reference mark. Then, based on the defect information of the EUV reflective photomask substrate, it is compared with the pre-designed photomask pattern data, and corrected to the photomask pattern data that has no effect on the pattern transfer using the exposure device, or it is judged that the pattern transfer is affected. When there is an influence on printing, for example, the mask pattern data, etc., are corrected to add correction pattern data so as to hide defects under the pattern, and the above-mentioned resist film is drawn and developed by electron beams. , forming a resist pattern. In the second embodiment, since defect information including defect position information with high accuracy is obtained, the mask pattern data can be corrected with high accuracy. Using the resist pattern as a mask, for the absorber film, the TaBO film is etched and removed by a fluorine-based gas (CF 4 gas), and the TaBN film is etched and removed by a chlorine-based gas (Cl 2 gas). An absorber film pattern is formed on the film. Furthermore, the resist pattern remaining on the absorber film pattern was removed with hot sulfuric acid to obtain an EUV reflective mask. The reflective mask thus obtained was set in an exposure apparatus, and pattern transfer was performed on the semiconductor substrate on which the resist film was formed. As a result, there was no defect in the transfer pattern caused by the reflective mask, and a satisfactory operation was achieved. Pattern transfer. (Reference Example 2) In the above-mentioned Example 2, when the above-mentioned absorber film was formed on the substrate with the multilayer reflective film on which the first fiducial mark was formed, the absorber film was formed on the entire surface, and the above-mentioned alignment region was not formed, Except for this, a reflective mask base was produced in the same manner as in Example 2. In the same manner as in Example 2, the defect inspection of the substrate with the multilayer reflective film was carried out with the ABI device, and the defect position information and the defect size information were obtained. In addition, as a result of examining the region on the absorber film on which the first fiducial mark was formed in the reflective mask substrate with an ABI device, the first fiducial mark formed on the multilayer reflective film had low contrast under EUV light, It cannot be detected with good accuracy, so the accuracy of the obtained defect coordinates is poor, and it is difficult to obtain defect information of the reflective mask substrate. Next, in the same manner as in Example 2, an EUV reflection type mask was produced using this EUV reflection type mask base. The obtained EUV reflective photomask was set in an exposure apparatus, and pattern transfer was performed on the semiconductor substrate on which the resist film was formed. As a result, defects in the transfer pattern caused by the reflective photomask were observed. The reason is considered to be that, as mentioned above, the accuracy of the defect coordinates of the first fiducial marks is poor, and it is difficult to obtain the defect information of the reflective photomask substrate. Therefore, in the pattern drawing step, the EUV-based reflective photomask substrate cannot be performed with high precision. The correction of the mask pattern data of the defect information, so that the defects on the multilayer reflective film cannot be accurately hidden under the pattern of the absorber film. In addition, like Example 1, in Example 2, the example which formed the 1st reference mark by the indentation using a micro indenter was given and demonstrated, but it is not limited to this. As also explained above, in addition to this method, concave portion formation by focused ion beam, photolithography, laser light, etc., machining marks generated by scanning a diamond needle, embossing by imprinting, etc. form. In addition, in Example 2, the example in which the 1st fiducial mark was formed in the alignment area|region was also mentioned and demonstrated, but it may be an actual defect existing in the alignment area|region.

10:玻璃基板 20:附多層反射膜之基板 20':附多層反射膜之基板 21:多層反射膜 22:第1基準標記 30:反射型光罩基底 30':反射型光罩基底 31:吸收體膜 31a:吸收體膜圖案 32:對準區域 32':對準區域 33:對準區域 40:反射型光罩 40':反射型光罩 42:第2基準標記 42a:主標記 42b:輔助標記 42c:輔助標記 42d:輔助標記 42e:輔助標記 50:遮蔽構件 d:遮蔽長度 h:分隔距離 L1 :橫向之長度 L2 :縱向之長度 L3 :橫向之長度 L4 :縱向之長度 W:寬度10: glass substrate 20: substrate with multilayer reflective film 20': substrate with multilayer reflective film 21: multilayer reflective film 22: first reference mark 30: reflective mask base 30': reflective mask base 31: absorption Body film 31a: Absorber film pattern 32: Alignment region 32': Alignment region 33: Alignment region 40: Reflective mask 40': Reflective mask 42: Second reference mark 42a: Main mark 42b: Auxiliary Mark 42c: auxiliary mark 42d: auxiliary mark 42e: auxiliary mark 50: shielding member d: shielding length h: separation distance L 1 : horizontal length L 2 : vertical length L 3 : horizontal length L 4 : vertical length W :width

圖1係表示本發明之第1實施形態之反射型光罩基底之俯視圖。 圖2係構成圖1所示之反射型光罩基底之附多層反射膜之基板之俯視圖。 圖3(a)～(d)係表示第1基準標記之形狀例之圖。 圖4(a)～(d)係表示第2基準標記之形狀例之圖。 圖5係表示第2基準標記與缺陷檢查光等之掃描方向之關係的圖。 圖6(a)～(d)係表示本發明之第1實施形態之反射型光罩基底及反射型光罩之製造步驟之概略剖視圖。 圖7係表示本發明之第2實施形態之反射型光罩基底之俯視圖。 圖8係構成圖7所示之反射型光罩基底之附多層反射膜之基板之俯視圖。 圖9係表示本發明之第3實施形態之反射型光罩基底之俯視圖。 圖10(a)～(d)係表示本發明之第2、第3實施形態之反射型光罩基底及反射型光罩之製造步驟的概略剖視圖。 圖11係用以對第2、第3實施形態中的，於圖案形成區域之外周緣區域形成對準區域之方法進行說明的概略剖視圖。FIG. 1 is a plan view showing a reflective mask base according to a first embodiment of the present invention. FIG. 2 is a top view of a substrate with a multilayer reflective film that constitutes the base of the reflective photomask shown in FIG. 1 . FIGS. 3( a ) to ( d ) are diagrams showing an example of the shape of the first reference mark. FIGS. 4( a ) to ( d ) are diagrams showing an example of the shape of the second reference mark. FIG. 5 is a diagram showing the relationship between the second reference mark and the scanning direction of defect inspection light and the like. FIGS. 6( a ) to ( d ) are schematic cross-sectional views showing the manufacturing steps of the reflective photomask substrate and the reflective photomask according to the first embodiment of the present invention. FIG. 7 is a plan view showing a reflective mask base according to a second embodiment of the present invention. FIG. 8 is a top view of a substrate with a multilayer reflective film forming the base of the reflective photomask shown in FIG. 7 . FIG. 9 is a plan view showing a reflection type photomask base according to a third embodiment of the present invention. FIGS. 10( a ) to ( d ) are schematic cross-sectional views showing the manufacturing steps of the reflective photomask substrate and the reflective photomask according to the second and third embodiments of the present invention. 11 is a schematic cross-sectional view for explaining a method of forming an alignment region in the outer peripheral region of the pattern forming region in the second and third embodiments.

21:多層反射膜 21: Multi-layer reflective film

22:第1基準標記 22: 1st fiducial mark

30:反射型光罩基底 30: Reflective mask base

31:吸收體膜 31: Absorber film

32:對準區域 32: Alignment area

42:第2基準標記 42: 2nd fiducial mark

L1:橫向之長度 L 1 : Horizontal length

L2:縱向之長度 L 2 : The length of the longitudinal direction

W:寬度 W: width

Claims (8)

一種反射型光罩基底之製造方法，其特徵在於： 該反射型光罩基底係包括基板上具有反射EUV光之多層反射膜的附多層反射膜之基板、且於該附多層反射膜之基板上至少形成有吸收EUV光之吸收體膜者， 上述附多層反射膜之基板具有第1基準標記， 上述吸收體膜具有第2基準標記，且 上述製造方法包含如下步驟： 對上述附多層反射膜之基板進行缺陷檢查； 基於藉由上述缺陷檢查所得之缺陷資訊，製作以上述第1基準標記為基準之第1缺陷圖； 檢測以上述第2基準標記為基準之上述第1基準標記之座標；及 將上述附多層反射膜之基板之上述第1缺陷圖轉換為以上述第2基準標記為基準之第2缺陷圖。A method for manufacturing a reflective mask substrate, characterized in that: The reflective mask base includes a substrate with a multilayer reflective film that reflects EUV light on the substrate, and at least an absorber film that absorbs EUV light is formed on the substrate with a multilayer reflective film. The above-mentioned substrate with the multilayer reflective film has a first reference mark, The above-mentioned absorber film has a second reference mark, and The above-mentioned manufacturing method comprises the following steps: Defect inspection of the above-mentioned substrates with multi-layer reflective films; Based on the defect information obtained by the above-mentioned defect inspection, a first defect map based on the above-mentioned first fiducial mark is created; Detecting the coordinates of the first fiducial mark based on the second fiducial mark; and The said 1st defect map of the said board|substrate with a multilayer reflection film was converted into the 2nd defect map based on the said 2nd reference mark. 如請求項1之反射型光罩基底之製造方法，其中上述附多層反射膜之基板包含形成於上述多層反射膜上之保護膜。The method for manufacturing a reflective photomask substrate according to claim 1, wherein the substrate with the multilayer reflective film includes a protective film formed on the multilayer reflective film. 如請求項1或2之反射型光罩基底之製造方法，其中上述附多層反射膜之基板之缺陷檢查係使用波長短於100 nm之檢查光而進行。The method for manufacturing a reflective photomask substrate according to claim 1 or 2, wherein the defect inspection of the substrate with the multilayer reflective film is performed using inspection light with a wavelength shorter than 100 nm. 如請求項1或2之反射型光罩基底之製造方法，該製造方法包含使用座標測量器而特定出上述第1基準標記之基準標記形成座標之步驟。The manufacturing method of the reflective photomask substrate of claim 1 or 2, which comprises the step of specifying the fiducial mark forming coordinates of the first fiducial mark using a coordinate measuring device. 如請求項1或2之反射型光罩基底之製造方法，其中藉由以座標測量器測量上述第2基準標記而將其轉換為電子束描繪步驟之基準座標。The method for manufacturing a reflective mask substrate according to claim 1 or 2, wherein the second reference mark is converted into reference coordinates for the electron beam drawing step by measuring the second reference mark with a coordinate measuring device. 如請求項1或2之反射型光罩基底之製造方法，其中以整面檢查之方式進行上述反射型光罩基底之表面之缺陷檢查。The method for manufacturing a reflective photomask substrate according to claim 1 or 2, wherein the defect inspection on the surface of the above-mentioned reflective photomask substrate is performed by a full-surface inspection. 一種反射型光罩之製造方法，其特徵在於：對藉由如請求項1至6中任一項之反射型光罩基底之製造方法而獲得之反射型光罩基底中之上述吸收體膜進行圖案化，而形成吸收體膜圖案。A method of manufacturing a reflective photomask, characterized in that: the above-mentioned absorber film in a reflective photomask substrate obtained by the method for producing a reflective photomask substrate according to any one of claims 1 to 6 is subjected to patterned to form an absorber film pattern. 一種半導體裝置之製造方法，其使用藉由如請求項7之反射型光罩之製造方法而獲得之反射型光罩將轉印圖案曝光轉印於半導體基板上之抗蝕膜，藉此製造半導體裝置。A method for manufacturing a semiconductor device, which uses the reflective mask obtained by the method for manufacturing a reflective mask as claimed in claim 7 to expose a transfer pattern to a resist film on a semiconductor substrate, thereby manufacturing a semiconductor device.
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