KR102906466B1 - 반사형 마스크 블랭크, 반사형 마스크, 그리고 반사형 마스크 및 반도체 장치의 제조 방법 - Google Patents

반사형 마스크 블랭크, 반사형 마스크, 그리고 반사형 마스크 및 반도체 장치의 제조 방법

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Publication number
KR102906466B1
KR102906466B1 KR1020207027466A KR20207027466A KR102906466B1 KR 102906466 B1 KR102906466 B1 KR 102906466B1 KR 1020207027466 A KR1020207027466 A KR 1020207027466A KR 20207027466 A KR20207027466 A KR 20207027466A KR 102906466 B1 KR102906466 B1 KR 102906466B1
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South Korea
Prior art keywords
film
layer
phase shift
reflective mask
gas
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KR1020207027466A
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Korean (ko)
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KR20210013008A (ko
Inventor
요헤이 이케베
츠토무 쇼키
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호야 가부시키가이샤
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Priority to KR1020257043335A priority Critical patent/KR20260003439A/ko
Publication of KR20210013008A publication Critical patent/KR20210013008A/ko
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020207027466A 2018-05-25 2019-05-24 반사형 마스크 블랭크, 반사형 마스크, 그리고 반사형 마스크 및 반도체 장치의 제조 방법 Active KR102906466B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020257043335A KR20260003439A (ko) 2018-05-25 2019-05-24 반사형 마스크 블랭크, 반사형 마스크 및 반도체 장치의 제조 방법

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2018100363 2018-05-25
JPJP-P-2018-100363 2018-05-25
JPJP-P-2018-165248 2018-09-04
JP2018165248 2018-09-04
PCT/JP2019/020635 WO2019225737A1 (ja) 2018-05-25 2019-05-24 反射型マスクブランク、反射型マスク、並びに反射型マスク及び半導体装置の製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020257043335A Division KR20260003439A (ko) 2018-05-25 2019-05-24 반사형 마스크 블랭크, 반사형 마스크 및 반도체 장치의 제조 방법

Publications (2)

Publication Number Publication Date
KR20210013008A KR20210013008A (ko) 2021-02-03
KR102906466B1 true KR102906466B1 (ko) 2026-01-02

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Application Number Title Priority Date Filing Date
KR1020207027466A Active KR102906466B1 (ko) 2018-05-25 2019-05-24 반사형 마스크 블랭크, 반사형 마스크, 그리고 반사형 마스크 및 반도체 장치의 제조 방법
KR1020257043335A Pending KR20260003439A (ko) 2018-05-25 2019-05-24 반사형 마스크 블랭크, 반사형 마스크 및 반도체 장치의 제조 방법

Family Applications After (1)

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KR1020257043335A Pending KR20260003439A (ko) 2018-05-25 2019-05-24 반사형 마스크 블랭크, 반사형 마스크 및 반도체 장치의 제조 방법

Country Status (6)

Country Link
US (4) US11550215B2 (https=)
JP (2) JPWO2019225737A1 (https=)
KR (2) KR102906466B1 (https=)
SG (1) SG11202011373SA (https=)
TW (3) TW202511858A (https=)
WO (1) WO2019225737A1 (https=)

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JP7250511B2 (ja) * 2018-12-27 2023-04-03 Hoya株式会社 反射型マスクブランク、反射型マスク、及び半導体装置の製造方法
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JP6929983B1 (ja) * 2020-03-10 2021-09-01 Hoya株式会社 反射型マスクブランクおよび反射型マスク、並びに半導体デバイスの製造方法
TWI886224B (zh) * 2020-03-17 2025-06-11 日商Ｈｏｙａ股份有限公司 光罩基底、光罩之製造方法及顯示裝置之製造方法
JP7679357B2 (ja) * 2020-03-30 2025-05-19 Hoya株式会社 多層反射膜付き基板、反射型マスクブランク、反射型マスク、及び半導体装置の製造方法
JP7318607B2 (ja) * 2020-07-28 2023-08-01 Ａｇｃ株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク、ｅｕｖリソグラフィ用反射型マスク、およびそれらの製造方法
WO2022050156A1 (ja) * 2020-09-04 2022-03-10 Ａｇｃ株式会社 反射型マスク、反射型マスクブランク、および反射型マスクの製造方法
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KR102850171B1 (ko) * 2021-06-15 2025-08-25 주식회사 에스앤에스텍 극자외선 리소그래피용 위상반전 블랭크마스크 및 포토마스크
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JP2022123773A (ja) 2021-02-12 2022-08-24 株式会社トッパンフォトマスク 反射型フォトマスクブランク及び反射型フォトマスク
KR102882817B1 (ko) * 2021-06-15 2025-11-07 주식회사 에스앤에스텍 극자외선 리소그래피용 위상반전 블랭크마스크 및 포토마스크
KR102837249B1 (ko) * 2021-02-25 2025-07-22 주식회사 에스앤에스텍 극자외선 리소그래피용 위상반전 블랭크마스크 및 포토마스크
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JPWO2019225737A1 (ja) 2021-06-10
US20240036458A1 (en) 2024-02-01
TW202004326A (zh) 2020-01-16
JP2024153940A (ja) 2024-10-29
US20240393675A1 (en) 2024-11-28
US11815807B2 (en) 2023-11-14
US12105413B2 (en) 2024-10-01
US20230087016A1 (en) 2023-03-23
US11550215B2 (en) 2023-01-10
WO2019225737A1 (ja) 2019-11-28
US20210223681A1 (en) 2021-07-22
TW202349105A (zh) 2023-12-16
KR20210013008A (ko) 2021-02-03
SG11202011373SA (en) 2020-12-30
TWI811369B (zh) 2023-08-11
TWI867651B (zh) 2024-12-21
KR20260003439A (ko) 2026-01-06
TW202511858A (zh) 2025-03-16

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