WO2019225737A1 - 反射型マスクブランク、反射型マスク、並びに反射型マスク及び半導体装置の製造方法 - Google Patents

反射型マスクブランク、反射型マスク、並びに反射型マスク及び半導体装置の製造方法 Download PDF

Info

Publication number
WO2019225737A1
WO2019225737A1 PCT/JP2019/020635 JP2019020635W WO2019225737A1 WO 2019225737 A1 WO2019225737 A1 WO 2019225737A1 JP 2019020635 W JP2019020635 W JP 2019020635W WO 2019225737 A1 WO2019225737 A1 WO 2019225737A1
Authority
WO
WIPO (PCT)
Prior art keywords
film
layer
phase shift
reflective mask
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2019/020635
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
洋平 池邊
笑喜　勉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hoya Corp
Original Assignee
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to KR1020207027466A priority Critical patent/KR102906466B1/ko
Priority to KR1020257043335A priority patent/KR20260003439A/ko
Priority to SG11202011373SA priority patent/SG11202011373SA/en
Priority to JP2020520392A priority patent/JPWO2019225737A1/ja
Priority to US17/056,676 priority patent/US11550215B2/en
Application filed by Hoya Corp filed Critical Hoya Corp
Publication of WO2019225737A1 publication Critical patent/WO2019225737A1/ja
Anticipated expiration legal-status Critical
Priority to US17/990,163 priority patent/US11815807B2/en
Priority to US18/483,484 priority patent/US12105413B2/en
Priority to US18/797,169 priority patent/US20240393675A1/en
Priority to JP2024135205A priority patent/JP2024153940A/ja
Ceased legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor

Definitions

  • the present invention relates to a reflective mask blank, a reflective mask, a reflective mask, and a method for manufacturing a semiconductor device, which are original plates for manufacturing an exposure mask used for manufacturing a semiconductor device.
  • EUV lithography using extreme ultraviolet (EUV) with a wavelength of around 13.5 nm has been developed.
  • EUV lithography a reflective mask is used because there are few materials transparent to EUV light.
  • a multilayer reflective film that reflects exposure light is formed on a low thermal expansion substrate, and a mask structure in which a desired transfer pattern is formed on a protective film for protecting the multilayer reflective film.
  • Basic structure In order to realize finer pattern transfer, EUV lithography, a reflective mask is used because there are few materials transparent to EUV light. In this reflective mask, a multilayer reflective film that reflects exposure light is formed on a low thermal expansion substrate, and a mask structure in which a desired transfer pattern is formed on a protective film for protecting the multilayer reflective film. Basic structure.
  • Typical examples of the transfer pattern configuration include a binary reflection mask and a phase shift reflection mask (halftone phase shift reflection mask).
  • the binary-type reflective mask has a relatively thick absorber pattern that sufficiently absorbs EUV light.
  • the phase shift type reflection mask reduces the EUV light by light absorption, and generates a comparatively thin absorption that generates reflected light whose phase is substantially reversed (approximately 180 degrees of phase inversion) with respect to the reflected light from the multilayer reflective film. It has a body pattern (phase shift pattern).
  • This phase shift type reflection mask like the transmission type optical phase shift mask, has an effect of improving resolution because a high transfer optical image contrast can be obtained by the phase shift effect.
  • the film thickness of the absorber pattern (phase shift pattern) of the phase shift type reflective mask is thin, a fine phase shift pattern can be formed with high accuracy.
  • EUV lithography a projection optical system including a large number of reflecting mirrors is used because of light transmittance. Then, EUV light is incident obliquely on the reflective mask so that the plurality of reflecting mirrors do not block the projection light (exposure light).
  • the incident angle is mainly 6 degrees with respect to the vertical plane of the reflective mask substrate. Studies are being conducted in the direction of increasing the numerical aperture (NA) of the projection optical system so that the angle becomes more oblique incidence of about 8 degrees.
  • NA numerical aperture
  • EUV lithography has an inherent problem called a shadowing effect because exposure light is incident obliquely.
  • the shadowing effect is a phenomenon in which exposure light is incident on the absorber pattern having a three-dimensional structure from an oblique direction, and a shadow is formed, thereby changing the size and position of the pattern formed by transfer.
  • the three-dimensional structure of the absorber pattern becomes a wall and a shadow is formed on the shade side, and the size and position of the transferred pattern changes. For example, there is a difference in the size and position of the transfer patterns between the case where the direction of the absorber pattern to be arranged is parallel to the direction of the oblique incident light and the case where the direction is perpendicular, and the transfer accuracy is lowered.
  • Patent Documents 1 to 3 disclose techniques relating to such a reflective mask for EUV lithography and a mask blank for producing the same. Patent Document 1 also discloses a shadowing effect.
  • a phase shift type reflection mask as a reflection type mask for EUV lithography, the film thickness of the phase shift pattern is relatively thinner than the film thickness of the absorber pattern of the binary type reflection mask. The reduction in accuracy is suppressed.
  • EUV lithography is required to have a high-precision fine dimension pattern transfer performance that is one step higher than before.
  • ultra fine high-precision pattern formation corresponding to the hp16nm (half pitch 16nm) generation is required.
  • it is required to further reduce the thickness of the absorber film (phase shift film) in order to reduce the shadowing effect.
  • the film thickness of the absorber film (phase shift film) is required to be less than 60 nm, preferably 50 nm or less.
  • Ta has been conventionally used as a material for forming an absorber film (phase shift film) of a reflective mask blank.
  • the refractive index n of Ta in EUV light (for example, wavelength 13.5 nm) is about 0.943. Therefore, even if the phase shift effect of Ta is used, the lower limit of the film thickness of the absorber film (phase shift film) formed only of Ta is 60 nm.
  • a metal material having a small refractive index n (having a large phase shift effect) can be used.
  • a metal material having a small refractive index n at a wavelength of 13.5 nm as described in, for example, FIG.
  • Mo is very easy to be oxidized and there is a concern about cleaning resistance, and Ru has a low etching rate and is difficult to process and modify.
  • the present invention provides a reflective mask blank that can further reduce the shadowing effect of the reflective mask and that can form a fine and highly accurate phase shift pattern, and a reflective mask produced thereby. It is another object of the present invention to provide a method for manufacturing a semiconductor device.
  • the present invention has the following configuration.
  • Configuration 1 of the present invention is a reflective mask blank having a multilayer reflective film and a phase shift film for shifting the phase of EUV light in this order on a substrate,
  • the phase shift film has a first layer and a second layer,
  • the first layer is made of a material containing at least one element of tantalum (Ta) and chromium (Cr)
  • the second layer includes ruthenium (Ru), chromium (Cr), nickel (Ni), cobalt (Co), vanadium (V), niobium (Nb), molybdenum (Mo), tungsten (W) and rhenium
  • a reflective mask blank characterized in that it is made of a material containing a metal containing at least one element of (Re).
  • the phase shift film having a thin film thickness required for the reflected light from the phase shift pattern to obtain a predetermined phase difference as compared with the reflected light from the opening of the reflective mask pattern is provided. Can be obtained. Therefore, the shadowing effect caused by the phase shift pattern can be further reduced in the reflective mask.
  • a phase shift film having a high relative reflectivity (relative reflectivity when EUV light reflected at a portion having no phase shift pattern is 100% reflectivity) is obtained. Can do.
  • the throughput in manufacturing a semiconductor device can be improved.
  • the second layer is made of a material containing a metal containing ruthenium (Ru) and at least one element of chromium (Cr), nickel (Ni), and cobalt (Co).
  • ruthenium ruthenium
  • Cr chromium
  • Ni nickel
  • Co cobalt
  • Configuration 3 of the present invention further includes a protective film between the multilayer reflective film and the phase shift film, and the protective film is made of a material containing ruthenium (Ru), and on the protective film,
  • the first layer containing tantalum (Ta) and / or chromium (Cr) is disposed between the protective film containing ruthenium (Ru) and the second layer,
  • an etching gas with which the protective film containing ruthenium (Ru) is resistant can be used.
  • Configuration 4 of the present invention further includes a protective film between the multilayer reflective film and the phase shift film, and the protective film is made of a material containing silicon (Si) and oxygen (O), and the protective film
  • the second layer containing ruthenium (Ru) is disposed on the protective film containing silicon (Si) and oxygen (O), so that the protective film is resistant to etching gas. Can be used to etch the second layer of the phase shift film.
  • Configuration 5 of the present invention is a reflective mask characterized by having a phase shift pattern in which the phase shift film in the reflective mask blank of any one of Configurations 1 to 4 is patterned.
  • the phase shift pattern of the reflective mask absorbs EUV light, and a part of the EUV light has a predetermined phase difference from the opening (the portion where the phase shift pattern is not formed). Since it can reflect, the reflective mask (EUV mask) of this invention can be manufactured by patterning the phase shift film of a reflective mask blank.
  • the first layer in the reflective mask blank of any one of Structures 1 to 4 is made of a material containing tantalum (Ta), and the second layer is made of chlorine gas and oxygen gas. And a phase shift pattern is formed by patterning the first layer with a dry etching gas containing a halogen-based gas not containing oxygen gas. It is a manufacturing method.
  • the first layer containing tantalum (Ta) can be etched by a dry etching gas containing a halogen-based gas not containing oxygen gas.
  • the second layer containing ruthenium (Ru) has resistance to a dry etching gas containing a halogen-based gas not containing oxygen gas.
  • the phase shift film including the first layer and the second layer is finely and highly accurate by etching the first layer and the second layer with different dry etching gases. Can be patterned.
  • the first layer is made of a material containing chromium (Cr), and the second layer is dry-etched containing oxygen gas.
  • the first layer containing chromium (Cr) can be etched by a dry etching gas containing a chlorine-based gas not containing oxygen gas.
  • the second layer containing ruthenium (Ru) has resistance to a dry etching gas containing a chlorine-based gas not containing oxygen gas.
  • the first layer and the second layer are etched with different dry etching gases, so that the phase shift film including the first layer and the second layer is fine and highly accurate. Can be patterned.
  • the first layer in the reflective mask blank of any one of Structures 1 to 4 is made of a material containing chromium (Cr), and the second layer and the first layer are A reflective mask manufacturing method is characterized in that a phase shift pattern is formed by patterning with a dry etching gas containing a chlorine-based gas and an oxygen gas.
  • the first layer containing chromium (Cr) and the second layer containing ruthenium (Ru) are etched by a predetermined one kind of dry etching gas, whereby the first layer is formed.
  • the phase shift film including the second layer can be patterned by a single etching process.
  • Configuration 9 of the present invention includes a step of setting the reflective mask of Configuration 5 in an exposure apparatus having an exposure light source that emits EUV light, and transferring a transfer pattern to a resist film formed on a transfer target substrate.
  • a method for manufacturing a semiconductor device includes a step of setting the reflective mask of Configuration 5 in an exposure apparatus having an exposure light source that emits EUV light, and transferring a transfer pattern to a resist film formed on a transfer target substrate.
  • the thickness of the phase shift film can be reduced, the shadowing effect can be reduced, and a fine and highly accurate phase shift pattern can be formed on the sidewall roughness.
  • a reflective mask that can be formed with a small and stable cross-sectional shape can be used for manufacturing a semiconductor device. Therefore, a semiconductor device having a fine and highly accurate transfer pattern can be manufactured.
  • the thickness of the phase shift film can be reduced, the shadowing effect can be reduced, and a fine and highly accurate phase shift can be achieved.
  • the pattern can be formed with a stable cross-sectional shape with little sidewall roughness. Therefore, the reflective mask manufactured using the reflective mask blank of this structure can form the phase shift pattern itself formed on the mask finely and with high accuracy, and also prevents deterioration in accuracy during transfer due to shadowing. it can. Further, by performing EUV lithography using this reflective mask, it is possible to provide a method for manufacturing a fine and highly accurate semiconductor device.
  • FIG. 1 is a schematic cross-sectional view of an essential part for explaining the configuration of a reflective mask blank 100 of the present embodiment.
  • a reflective mask blank 100 includes a mask blank substrate 1 (also simply referred to as “substrate 1”), a multilayer reflective film 2, a protective film 3, and a phase shift film 4 (lower layer). 41 and an upper layer 42), which are laminated in this order.
  • the multilayer reflective film 2 reflects EUV light that is exposure light formed on the first main surface (front surface) side.
  • the protective film 3 is provided to protect the multilayer reflective film 2 and is formed of a material having resistance to an etchant and a cleaning liquid used when patterning the phase shift film 4 described later.
  • the phase shift film 4 absorbs EUV light.
  • a back surface conductive film 5 for electrostatic chuck is formed on the second main surface (back surface) side of the substrate 1.
  • “having the multilayer reflective film 2 on the main surface of the mask blank substrate 1” means that the multilayer reflective film 2 is disposed in contact with the surface of the mask blank substrate 1.
  • the case where it means that another film is provided between the mask blank substrate 1 and the multilayer reflective film 2 is also included.
  • “having the film B on the film A” means that the film A and the film B are arranged so as to be in direct contact with each other, and that another film is provided between the film A and the film B. Including the case of having.
  • “the film A is disposed in contact with the surface of the film B” means that the film A and the film B are not interposed between the film A and the film B, It means that it is arranged so that it touches directly.
  • the second layer is, for example, “a thin film made of a material containing a metal containing ruthenium (Ru) and chromium (Cr)”. Furthermore, it means a thin film made of a material containing ruthenium (Ru) and chromium (Cr). On the other hand, when the second layer is “a thin film made of ruthenium (Ru) and chromium (Cr)”, it means that the second layer is made only of ruthenium (Ru) and chromium (Cr). There is. In any case, it is included that impurities inevitably mixed are included in the second layer.
  • the substrate 1 having a low thermal expansion coefficient within a range of 0 ⁇ 5 ppb / ° C. is preferably used.
  • a material having a low thermal expansion coefficient in this range for example, SiO 2 —TiO 2 glass, multicomponent glass ceramics, and the like can be used.
  • the flatness is preferably 0.1 ⁇ m or less, more preferably 0.05 ⁇ m or less, particularly preferably in a 132 mm ⁇ 132 mm region on the main surface on the side where the transfer pattern of the substrate 1 is formed. 0.03 ⁇ m or less.
  • the second main surface opposite to the side on which the transfer pattern is formed is a surface that is electrostatically chucked when being set in the exposure apparatus, and has a flatness of 0.1 ⁇ m or less in a 132 mm ⁇ 132 mm region.
  • the thickness is preferably 0.05 ⁇ m or less, more preferably 0.03 ⁇ m or less.
  • the flatness on the second main surface side in the reflective mask blank 100 is preferably 1 ⁇ m or less, more preferably 0.5 ⁇ m or less, and particularly preferably 0.3 ⁇ m in a 142 mm ⁇ 142 mm region. It is as follows.
  • the high surface smoothness of the substrate 1 is an extremely important item.
  • the surface roughness of the first main surface of the substrate 1 on which the transfer phase shift pattern 4a is formed is preferably not more than 0.1 nm in terms of root mean square roughness (RMS).
  • RMS root mean square roughness
  • the substrate 1 has high rigidity in order to prevent deformation due to film stress of a film (multilayer reflective film 2 or the like) formed thereon.
  • a film multilayer reflective film 2 or the like
  • those having a high Young's modulus of 65 GPa or more are preferable.
  • the multilayer reflective film 2 provides the reflective mask 200 with a function of reflecting EUV light, and is a multilayer film in which layers mainly composed of elements having different refractive indexes are periodically laminated.
  • a thin film (high refractive index layer) of a light element or a compound thereof, which is a high refractive index material, and a thin film (low refractive index layer) of a heavy element or a compound thereof, which is a low refractive index material, are alternately 40
  • a multilayer film laminated for about 60 cycles is used as the multilayer reflective film 2.
  • the multilayer film may be laminated in a plurality of periods, with a laminated structure of a high refractive index layer / low refractive index layer in which a high refractive index layer and a low refractive index layer are laminated in this order from the substrate 1 side as one period.
  • the multilayer film may be laminated in a plurality of periods with a laminated structure of a low refractive index layer / high refractive index layer in which a low refractive index layer and a high refractive index layer are laminated in this order from the substrate 1 side as one period.
  • the outermost layer of the multilayer reflective film 2, that is, the surface layer opposite to the substrate 1 of the multilayer reflective film 2, is preferably a high refractive index layer.
  • the uppermost layer has a low refractive index. It becomes a rate layer.
  • the low refractive index layer constitutes the outermost surface of the multilayer reflective film 2
  • the multilayer film described above when the low-refractive index layer / high-refractive index layer stack structure in which the low-refractive index layer and the high-refractive index layer are stacked in this order from the substrate 1 side is a plurality of periods, Since the upper layer is a high refractive index layer, it can be left as it is.
  • a layer containing silicon (Si) is employed as the high refractive index layer.
  • Si silicon
  • a material containing Si in addition to Si alone, a Si compound containing boron (B), carbon (C), nitrogen (N), and oxygen (O) in addition to Si can be used.
  • B boron
  • C carbon
  • N nitrogen
  • O oxygen
  • a layer containing Si as the high refractive index layer, a reflective mask 200 for EUV lithography having an excellent EUV light reflectance can be obtained.
  • a glass substrate is preferably used as the substrate 1. Si is also excellent in adhesion to the glass substrate.
  • a single metal selected from molybdenum (Mo), ruthenium (Ru), rhodium (Rh), and platinum (Pt), or an alloy thereof is used.
  • Mo molybdenum
  • Ru ruthenium
  • Rh rhodium
  • Pt platinum
  • Mo / Si periodic laminated film in which Mo films and Si films are alternately laminated for about 40 to 60 periods is preferably used.
  • a silicon oxide containing silicon and oxygen is formed between the uppermost layer (Si) and the Ru-based protective film 3 by forming a high refractive index layer, which is the uppermost layer of the multilayer reflective film 2, with silicon (Si).
  • a layer may be formed. Thereby, mask cleaning tolerance can be improved.
  • the reflectance of such a multilayer reflective film 2 alone is usually 65% or more, and the upper limit is usually 73%.
  • the film thickness and period of each constituent layer of the multilayer reflective film 2 may be appropriately selected depending on the exposure wavelength, and are selected so as to satisfy the Bragg reflection law.
  • the film thicknesses of the high refractive index layers and the low refractive index layers may not be the same.
  • the film thickness of the Si layer on the outermost surface of the multilayer reflective film 2 can be adjusted within a range in which the reflectance is not lowered.
  • the film thickness of the outermost surface Si (high refractive index layer) can be 3 nm to 10 nm.
  • each layer of the multilayer reflective film 2 can be formed by ion beam sputtering.
  • an Si film having a thickness of about 4 nm is first formed on the substrate 1 using an Si target, for example, by ion beam sputtering.
  • a Mo film having a thickness of about 3 nm is formed using a Mo target.
  • This Si film / Mo film is set as one period, and the multilayer reflective film 2 is formed by laminating 40 to 60 periods (the outermost layer is an Si layer).
  • Kr krypton
  • a protective film 3 is formed on the multilayer reflective film 2 or in contact with the surface of the multilayer reflective film 2. Can do. Further, it also protects the multilayer reflective film 2 when correcting the black defect of the phase shift pattern 4a using an electron beam (EB).
  • FIG. 1 shows a case where the protective film 3 has one layer, but a laminated structure of three or more layers may also be used.
  • the protective film 3 is formed of a material having resistance to an etchant used for patterning the phase shift film 4 and a cleaning liquid.
  • the protective film 3 is formed on the multilayer reflective film 2, damage to the surface of the multilayer reflective film 2 when the reflective mask 200 (EUV mask) is manufactured using the substrate with the multilayer reflective film is suppressed. be able to. For this reason, the reflectance characteristics of the multilayer reflective film 2 with respect to EUV light are improved.
  • the protective film 3 has one layer
  • the property of the material of the uppermost layer of the protective film 3 (the layer in contact with the phase shift film 4) is important in relation to the phase shift film 4.
  • the material of the protective film 3 is resistant to an etching gas used for dry etching for patterning the phase shift film 4 formed on the protective film 3.
  • the material can be selected.
  • the phase shift film 4 is formed of a plurality of layers
  • the material of the protective film 3 in contact with the phase shift film 4 (the uppermost layer of the protective film 3 when the protective film 3 includes a plurality of layers) is a phase shift film 4 can be selected from materials that are resistant to an etching gas used for dry etching for patterning the lowermost layer of the phase shift film 4 (the layer in contact with the protective film 3).
  • the material of the protective film 3 has an etching selectivity of the lowermost layer of the phase shift film 4 with respect to the protective film 3 (etching speed of the lowermost layer of the phase shift film 4 / etching speed of the protective film 3) of 1.5 or more, preferably 3 It is preferable that the material is as described above.
  • the lowermost layer of the phase shift film 4 is made of a material containing a metal containing ruthenium (Ru) and at least one element of chromium (Cr), nickel (Ni), and cobalt (Co) (predetermined Ru system) Material) or a material containing a metal containing ruthenium (Ru) and at least one element of vanadium (V), niobium (Nb), molybdenum (Mo), tungsten (W) and rhenium (Re) (predetermined)
  • the lowermost layer of the phase shift film 4 can be etched by a dry etching gas using a mixed gas of chlorine-based gas and oxygen gas, or oxygen gas.
  • the protective film 3 As a material of the protective film 3 having resistance to this etching gas, a material containing silicon (Si), silicon (Si) and oxygen (O), or a material containing silicon (Si) and nitrogen (N), etc. A silicon-based material can be selected. Therefore, when the lowermost layer of the phase shift film 4 in contact with the surface of the protective film 3 is a thin film made of a predetermined Ru-based material, the protective film 3 is preferably made of the silicon-based material.
  • the silicon-based material has resistance to a mixed gas of chlorine-based gas and oxygen gas, or a dry etching gas using oxygen gas, and the resistance is higher as the oxygen content is higher. Therefore, the material of the protective film 3 is more preferably silicon oxide (SiO x , 1 ⁇ x ⁇ 2), more preferably x is more preferable, and SiO 2 is particularly preferable.
  • the phase shift film 4 in contact with the surface of the protective film 3 is a thin film made of a material containing tantalum (Ta)
  • the phase is obtained by dry etching using a halogen-based gas not containing oxygen gas.
  • the lowermost layer of the shift film 4 can be etched.
  • a material containing ruthenium (Ru) as a main component can be selected as the material of the protective film 3 having resistance against the etching gas.
  • the lowermost layer of the phase shift film 4 in contact with the surface of the protective film 3 is a thin film made of a material containing chromium (Cr), chlorine-based gas that does not contain oxygen gas, or oxygen gas and chlorine-based gas
  • the bottom layer of the phase shift film 4 can be etched by dry etching using a dry etching gas of a mixed gas.
  • ruthenium (Ru) is used as a main component. The material to be included can be selected.
  • the material of the protective film 3 that can be used when the lowermost layer of the phase shift film 4 is a material containing tantalum (Ta) or chromium (Cr) is a material containing ruthenium as a main component.
  • materials containing ruthenium as a main component include Ru metal alone, Ru with titanium (Ti), niobium (Nb), molybdenum (Mo), zirconium (Zr), yttrium (Y), boron (B).
  • the protective film 3 is made of ruthenium (Ru), cobalt (Co), niobium (Nb), molybdenum (Mo) which is the same material as the layer (for example, the upper layer 42) above the lowermost layer of the phase shift film 4. ) And rhenium (Re) and a material containing a metal containing at least one element.
  • the protective film 3 when the lowermost layer of the phase shift film 4 is made of a material containing tantalum (Ta) or chromium (Cr), for example, the lowermost layer and the uppermost layer of the protective film 3 are mainly composed of the above-described ruthenium. And a protective film 3 in which a metal or alloy other than Ru is interposed between the lowermost layer and the uppermost layer.
  • the Ru content ratio of this Ru alloy is 50 atom% or more and less than 100 atom%, preferably 80 atom% or more and less than 100 atom%, more preferably 95 atom% or more and less than 100 atom%.
  • the Ru content ratio of this Ru alloy is 95 atomic% or more and less than 100 atomic%, sufficient reflectivity of EUV light is secured while suppressing diffusion of the constituent element (silicon) of the multilayer reflective film 2 to the protective film 3.
  • the functions of the protective film 3 such as resistance to mask cleaning, an etching stopper function when the phase shift film 4 is etched, and prevention of change of the multilayer reflective film 2 over time.
  • EUV lithography since there are few substances that are transparent to exposure light, an EUV pellicle that prevents foreign matter from adhering to the mask pattern surface is not technically simple. For this reason, pellicleless operation without using a pellicle has become the mainstream. Further, in EUV lithography, exposure contamination occurs such that a carbon film is deposited on a mask or an oxide film grows by EUV exposure. For this reason, it is necessary to frequently remove the foreign matter and contamination on the mask while the EUV reflective mask is used for manufacturing the semiconductor device. For this reason, EUV reflective masks are required to have an extraordinary mask cleaning resistance as compared to transmissive masks for photolithography. Since the reflective mask 200 has the protective film 3, it is possible to increase the cleaning resistance against the cleaning liquid.
  • the thickness of the protective film 3 is not particularly limited as long as the function of protecting the multilayer reflective film 2 can be achieved. From the viewpoint of the reflectivity of EUV light, the thickness of the protective film 3 is preferably 1.0 nm to 8.0 nm, more preferably 1.5 nm to 6.0 nm.
  • the same method as a known film forming method can be employed without any particular limitation.
  • Specific examples include a sputtering method and an ion beam sputtering method.
  • phase Shift Film 4 A phase shift film 4 for shifting the phase of EUV light is formed on the protective film 3.
  • part of the light is reflected at a level that does not adversely affect pattern transfer while absorbing and reducing EUV light.
  • EUV light is reflected from the multilayer reflective film 2 via the protective film 3 in the opening (the part where the phase shift film 4 is not present).
  • the reflected light from the portion where the phase shift film 4 is formed forms a desired phase difference with the reflected light from the opening.
  • the phase shift film 4 is formed so that the phase difference between the reflected light from the phase shift film 4 and the reflected light from the multilayer reflective film 2 is 160 degrees to 200 degrees.
  • the standard of the reflectance of the phase shift film 4 for obtaining this phase shift effect is 2% or more in terms of relative reflectance.
  • the reflectance of the phase shift film 4 is preferably 6% or more in terms of relative reflectance.
  • the phase difference can be set from 130 degrees to 160 degrees, or from 200 degrees to 230 degrees in order to further improve the contrast. .
  • the relative reflectance of the phase shift film 4 (phase shift pattern 4a) is reflected from the multilayer reflective film 2 (including the multilayer reflective film 2 with the protective film 3) in a portion where the phase shift pattern 4a is not present.
  • This is the reflectance of the EUV light reflected from the phase shift pattern 4a when the EUV light has a reflectance of 100%.
  • the relative reflectance may be simply referred to as “reflectance”.
  • the absolute reflectance of the phase shift film 4 is preferably 9% or more.
  • the absolute reflectance of the phase shift film 4 (phase shift pattern 4a) is the reflectance of EUV light reflected from the phase shift film 4 (or phase shift pattern 4a) (ratio of incident light intensity and reflected light intensity). ).
  • the relative reflectance of the phase shift pattern 4a is preferably 6% to 40%. More preferably, it is required to be 6 to 35%, further preferably 15% to 35%, and further preferably 15% to 25%.
  • the absolute reflectance of the phase shift film 4 is 4% to 27%, more preferably 10%. Desirably, it is ⁇ 17%.
  • the phase shift film 4 of the present embodiment has a first layer and a second layer.
  • the first layer is made of a material containing at least one element of tantalum (Ta) and chromium (Cr).
  • the second layer is composed of ruthenium (Ru), chromium (Cr), nickel (Ni), cobalt (Co), vanadium (V), niobium (Nb), molybdenum (Mo), tungsten (W) and rhenium (Re ), A material containing a metal containing at least one element.
  • the phase shift film 4 of the reflective mask blank 100 of this embodiment includes a first layer and a second layer of a predetermined material, thereby obtaining a phase shift pattern 4a having a relative reflectance of 6% to 40%. be able to.
  • the phase shift film 4 of the reflective mask blank 100 of this embodiment can have an absolute reflectance of 4% to 27% by using a predetermined material.
  • the phase shift film 4 of the reflective mask blank 100 of the present embodiment is a film necessary for obtaining a predetermined phase difference (phase difference between reflected light from the opening and reflected light from the phase shift pattern 4a). The thickness is thin. Therefore, in the reflective mask 200, the shadowing effect caused by the phase shift pattern 4a can be further reduced. Further, by using the reflective mask 200 manufactured from the reflective mask blank 100 of the present embodiment, the throughput in manufacturing the semiconductor device can be improved.
  • the first layer of the phase shift film 4 of the reflective mask blank 100 of this embodiment will be described.
  • the first layer is made of a material containing at least one element of tantalum (Ta) and chromium (Cr).
  • the material of the first layer containing tantalum (Ta) is one or more selected from tantalum (Ta), oxygen (O), nitrogen (N), carbon (C), boron (B), and hydrogen (H).
  • the material containing these elements is mentioned.
  • the material of the first layer is particularly preferably a material containing nitrogen (N) in tantalum (Ta).
  • Specific examples of such materials include tantalum nitride (TaN), tantalum oxynitride (TaON), tantalum boride nitride (TaBN), and tantalum boride oxynitride (TaBON).
  • the composition range of Ta and N is preferably 3: 1 to 20: 1, and more preferably 4: 1 to 12: 1.
  • the film thickness is preferably 2 to 55 nm, and more preferably 2 to 30 nm.
  • the material of the first layer containing chromium (Cr) is one or more selected from chromium (Cr), oxygen (O), nitrogen (N), carbon (C), boron (B), and hydrogen (H).
  • the material containing these elements is mentioned.
  • the material of the first layer is particularly preferably a material containing carbon (C) in chromium (Cr).
  • Specific examples of such materials include chromium nitride (CrC), chromium oxynitride (CrOC), chromium carbonitride (CrCN), and chromium oxycarbonitride (CrOCN).
  • the composition range of Cr and C is preferably 5: 2 to 20: 1, and more preferably 3: 1 to 12: 1.
  • the film thickness is preferably 2 to 55 nm, and more preferably 2 to 25 nm.
  • the ranges of the refractive index n and the extinction coefficient k when the phase shift of the phase shift film 4 is 160 to 200 degrees are as follows.
  • the first consisting of a material containing at least one element of tantalum (Ta) and chromium (Cr).
  • the refractive index n of the layer with respect to EUV light is preferably 0.930 to 0.960, and the extinction coefficient k is preferably 0.020 to 0.041.
  • the refractive index n of the first layer with respect to EUV light is 0.930 to 0.960, and the extinction coefficient k is It is preferably 0.023 to 0.041.
  • the refractive index n of the first layer with respect to EUV light is 0.930 to 0.950, and the extinction coefficient k is It is preferably 0.023 to 0.033.
  • the refractive index n of the first layer with respect to EUV light is 0.935 to 0.950, and the extinction coefficient k is It is preferably 0.026 to 0.033.
  • the ranges of the refractive index n and the extinction coefficient k when the phase shift of the phase shift film 4 is 130 to 160 degrees are as follows.
  • the phase shift film 4 is made of a material containing at least one element of tantalum (Ta) and chromium (Cr).
  • the refractive index n of the first layer with respect to EUV light is preferably 0.930 to 0.960, and the extinction coefficient k is preferably 0.025 to 0.046.
  • the ranges of the refractive index n and the extinction coefficient k when the phase shift of the phase shift film 4 is 200 to 230 degrees are as follows.
  • the refractive index n of the first layer with respect to EUV light is 0.930 to 0.960.
  • the extinction coefficient k is preferably 0.015 to 0.036.
  • the second layer of the phase shift film 4 of the reflective mask blank 100 of the present embodiment (hereinafter sometimes simply referred to as “predetermined Ru-based material”) will be described.
  • the second layer is composed of ruthenium (Ru), chromium (Cr), nickel (Ni), cobalt (Co), vanadium (V), niobium (Nb), molybdenum (Mo), tungsten (W) and rhenium (Re ), A material containing a metal containing at least one element.
  • Ru-based compounds such as RuO tend to have a crystallized structure and have poor processing characteristics. That is, the crystallized metal crystal particles tend to have a large sidewall roughness when the phase shift pattern 4a is formed. For this reason, there is a case where the predetermined phase shift pattern 4a is adversely affected.
  • the metal of the material of the phase shift film 4 is amorphous, adverse effects when forming the phase shift pattern 4a can be reduced.
  • the metal of the material of the phase shift film 4 can be made amorphous, and the processing characteristics can be improved.
  • the predetermined element (X) at least one of Cr, Ni, Co, V, Nb, Mo, W, and Re can be selected.
  • a binary material (RuCr, RuNi, and RuCo) in which a predetermined element (X) is added to Ru can make the phase shift film 4 thinner than RuTa, which is a conventional material. Further, since Ni and Co have a larger extinction coefficient k than Cr, the thickness of the phase shift film 4 is greater when Ni and / or Co is selected as the element (X) than when Cr is selected. It is possible to make it thinner.
  • the ranges of the refractive index n and the extinction coefficient k when the phase shift of the phase shift film 4 is 160 to 200 degrees are as follows.
  • the refractive index of the second layer made of a material obtained by adding a predetermined element (X) to Ru with respect to EUV light n is preferably 0.860 to 0.950
  • the extinction coefficient k is preferably 0.008 to 0.095.
  • the refractive index n of the second layer with respect to EUV light is 0.860 to 0.950, and the extinction coefficient k is It is preferably 0.008 to 0.095.
  • the refractive index n is 0.860 to 0.950, and the extinction coefficient k is 0.008 to 0.050.
  • the refractive index n of the second layer with respect to EUV light is 0.890 to 0.950, and the extinction coefficient k is It is preferably 0.020 to 0.050.
  • the ranges of the refractive index n and the extinction coefficient k when the phase shift of the phase shift film 4 is 130 to 160 degrees are as follows.
  • the relative reflectance of the phase shift film 4 is 10% to 40% or the absolute reflectance is 6.7% to 27%
  • the EUV light of the second layer made of a material obtained by adding a predetermined element (X) to Ru
  • the refractive index n is preferably 0.860 to 0.950
  • the extinction coefficient k is preferably 0.009 to 0.095.
  • the refractive index n for the EUV light of the second layer is 0.860 to 0.950
  • the extinction coefficient k is It is preferably 0.01 to 0.073.
  • the ranges of the refractive index n and the extinction coefficient k when the phase shift of the phase shift film 4 is 200 to 230 degrees are as follows.
  • the refractive index n of the second layer with respect to EUV light is 0.860 to 0.940.
  • the extinction coefficient k is preferably 0.008 to 0.057.
  • the refractive index n of the second layer with respect to EUV light is 0.860 to 0.939
  • the extinction coefficient k is It is preferably 0.009 to 0.045.
  • the phase difference and reflectance of the phase shift film 4 can be adjusted by changing the refractive index n, the extinction coefficient k, the thickness of the first layer, and the thickness of the second layer.
  • the film thickness of the first layer is preferably 55 nm or less, and more preferably 30 nm or less.
  • the film thickness of the first layer is preferably 2 nm or more.
  • the film thickness of the second layer is preferably 50 nm or less, and more preferably 35 nm or less.
  • the film thickness of the second layer is preferably 5 nm or more, and more preferably 15 nm or more.
  • the film thickness of the phase shift film 4 (total film thickness of the first layer and the second layer) is preferably 60 nm or less, more preferably 50 nm or less, and still more preferably 40 nm or less.
  • the thickness of the phase shift film 4 is preferably 25 nm or more.
  • Binary materials obtained by adding a predetermined element (X) to Ru have better processing characteristics than RuTa, which is a conventional material.
  • RuCr is excellent in processing characteristics because it can be easily etched with a mixed gas of chlorine-based gas and oxygen gas.
  • RuCr can process the first layer and the second layer with the same dry etching gas when the material of the first layer contains Cr.
  • Binary materials in which a predetermined element (X) is added to Ru have an amorphous structure and can be easily etched with a mixed gas of chlorine-based gas and oxygen gas. It is. Further, these materials can be etched with oxygen gas. The same applies to ternary materials (RuCrNi, RuCrCo and RuNiCo) and quaternary materials (RuCrNiCo).
  • binary materials obtained by adding V, Nb, Mo, W, or Re to Ru include conventional RuTa and Workability is better than that. Like RuCr, RuW and RuMo are particularly excellent in processing characteristics.
  • a binary material (RuV, RuNb, RuMo, RuW and RuRe) in which a predetermined element (X) is added to Ru has an amorphous structure and can be easily formed by a mixed gas of a chlorine-based gas and an oxygen gas. It is possible to etch. Further, these materials can be etched with oxygen gas. The same applies to ternary materials and quaternary materials.
  • the relative reflectance and absolute reflectance of a given Ru-based material increase as the Ru content increases.
  • the reflected light of the phase shift film 4 is transmitted from the surface of the phase shift film 4 and the back surface of the phase shift film 4 through the phase shift film 4 (the phase shift film 4 and the protective film 3 or multilayer reflection).
  • the light is superimposed on the back surface reflected light at the interface with the film 2. Therefore, the intensity of the reflected light of the phase shift film 4 has a periodic structure that depends on the film thickness of the phase shift film 4.
  • the reflectivity and phase difference of the phase shift film 4 also show a periodic structure depending on the film thickness.
  • the film thickness of 41 TaN film
  • the film thickness of the upper layer 42 RuCr film
  • the film thickness of the phase shift film 4 the relative reflectance of EUV light, and the phase difference It is a figure which shows the relationship.
  • This periodic structure is affected by the refractive index n and extinction coefficient k of the material of the phase shift film 4.
  • the reflected light from the phase shift pattern 4a needs to have a predetermined phase difference (for example, a phase difference of 180 degrees) with respect to the reflected light from the opening.
  • a predetermined phase difference for example, a phase difference of 180 degrees
  • the composition and the film of the predetermined Ru-based material are described.
  • the thickness a preferable range can be shown according to the relative reflectance of the phase shift film 4. As shown in FIG.
  • the film thickness of the RuCr film is 22.8 nm.
  • the thickness of the phase shift film 4 is 38.3 nm
  • the relative reflectance with respect to the multilayer reflective film (with a protective film) is 20.1% (the absolute reflectance is 13.4%), and the phase difference is about 180 degrees.
  • the phase shift film 4 includes two layers, a first layer and a second layer, and the first layer of the phase shift film 4 is at least one of tantalum (Ta) and chromium (Cr).
  • Ta tantalum
  • Cr chromium
  • the relationship between the composition (atomic ratio) and the film thickness of the predetermined Ru-based material is as follows: Street.
  • the film thickness is preferably 5 to 50 nm, and more preferably 15 to 35 nm.
  • the film thickness is preferably 5 to 45 nm, and more preferably 12 to 33 nm.
  • the film thickness is preferably 5 to 40 nm, and more preferably 10 to 30 nm.
  • the film thickness is preferably 5 to 60 nm, more preferably 16 to 50 nm.
  • the film thickness is preferably 5 to 33 nm, and more preferably 16 to 33 nm.
  • the film thickness is preferably 5 to 33 nm, more preferably 15 to 33 nm.
  • the film thickness is preferably 5 to 50 nm, and more preferably 16 to 40 nm.
  • the film thickness is preferably 5 to 38 nm, and more preferably 16 to 33 nm.
  • composition ratio of Ru and Cr, Ni, Co, V, Nb, Mo, W, and Re is within a predetermined range, a high reflectance and a phase with a predetermined phase difference can be obtained at a thin film thickness.
  • a second layer for obtaining the shift film 4 can be obtained.
  • the binary-based predetermined Ru-based material has been mainly described.
  • a predetermined binary Ru-based material has similar properties. Therefore, a ternary or quaternary material can be used as the predetermined Ru-based material.
  • the predetermined Ru-based material includes Ru and at least one element of Cr, Ni, Co, V, Nb, Mo, W, and Re within a range that does not significantly affect the refractive index and the extinction coefficient. Other elements can be included.
  • the predetermined Ru-based material can include an element such as nitrogen (N), oxygen (O), carbon (C), or boron (B).
  • nitrogen (N) is added to a predetermined Ru-based material, oxidation of the phase shift film 4 can be suppressed, so that the properties of the phase shift film 4 can be stabilized.
  • nitrogen (N) is added to a predetermined Ru-based material, the crystal state can be easily made amorphous regardless of sputtering film formation conditions.
  • the nitrogen content is preferably 1 atomic% or more, and more preferably 3 atomic% or more.
  • the nitrogen content is preferably 10 atomic% or less.
  • Oxygen (O), carbon (C), boron (B), and the like are also included in the phase shift film 4 within a range that does not significantly affect the refractive index and the extinction coefficient in order to stabilize the phase shift film 4.
  • the material of the phase shift film 4 contains Ru, at least one element of Cr, Ni, Co, V, Nb, Mo, W, and Re, and other elements, The content is preferably 10 atomic percent or less, and more preferably 5 atomic percent or less.
  • the phase shift film 4 of the predetermined Ru-based material described above can be formed by a known method such as a magnetron sputtering method such as a DC sputtering method or an RF sputtering method.
  • a magnetron sputtering method such as a DC sputtering method or an RF sputtering method.
  • an alloy target of Ru and at least one element of Cr, Ni, Co, V, Nb, Mo, W, and Re can be used as the target.
  • a target a Ru target and a Cr target, a Ni target, a Co target, a V target, a Nb target, a Mo target, a W target, and / or a Re target can be used to form a film as co-sputtering.
  • Co-sputtering has the advantage of easily adjusting the composition ratio of the metal elements, but there are cases where the crystal state of the film tends to be a columnar structure as compared with the alloy target.
  • nitrogen (N) is included in the film at the time of sputtering, the crystal state can be made amorphous.
  • the layer in contact with the multilayer reflective film 2 or the protective film 3 is referred to as the lower layer 41, and the phase shift on the opposite side of the multilayer reflective film 2 or the protective film 3 is performed.
  • a layer disposed on the surface of the film 4 is referred to as an upper layer 42.
  • the lower layer 41 is generally disposed at an arbitrary position on the side where the multilayer reflective film 2 or the protective film 3 is present than the upper layer 42.
  • the lower layer 41 can be the lowermost layer of the phase shift film 4 (the layer that is in contact with the multilayer reflective film 2 or the protective film 3 among the layers that form the phase shift film 4), and the upper layer 42 is the phase shift film. 4 (the most distant layer from the bottom layer among the layers forming the phase shift film 4).
  • each of the first layer and the second layer is either the upper layer 42 or the lower layer 41. That is, when the first layer of the predetermined material is the upper layer 42, the second layer of the predetermined material is the lower layer 41, and when the first layer of the predetermined material is the lower layer 41, The second layer of the predetermined material is the upper layer 42.
  • the phase shift film 4 can be composed of only two layers, the first layer and the second layer. Further, the phase shift film 4 can include films other than the first layer and the second layer. In the present embodiment, the phase shift film 4 is preferably composed of only two layers, the first layer and the second layer described above. When the phase shift film 4 is composed of only two layers, the first layer and the second layer, the number of steps in manufacturing the mask blank can be reduced, so that the production efficiency is improved.
  • phase shift film 4 when the phase shift film 4 includes two or more layers, the composition of either the first layer or the second layer, or the composition of the first layer and the second layer is not changed.
  • the reflectance and the phase difference can be changed by adjusting the film thickness.
  • phase shift film 4 When the phase shift film 4 includes three or more layers, a stacked structure in which three or more first layers and second layers are alternately stacked can be formed. By adjusting the film thicknesses of the first layer and the second layer, it is possible to improve the stability of the phase difference and the reflectance with respect to the film thickness fluctuation. In addition, when the uppermost layer of the phase shift film 4 is the second layer, the cleaning resistance can be improved.
  • the phase shift film 4 may be composed of three or more layers. However, for ease of explanation, the phase shift film 4 is composed of two layers of the first layer and the second layer. Taking the case as an example, the arrangement of the first layer and the second layer will be described. Moreover, the following example demonstrates the case where the reflective mask blank 100 has the protective film 3.
  • FIG. As will be described below, in consideration of the type of material of the protective film 3 and which of the first layer and the second layer is the lower layer 41, selection of the type of material of the protective film 3, and It is preferable to arrange the first layer and the second layer appropriately. This is because the type of dry etching gas capable of dry etching and the type of dry etching gas resistant to dry etching differ depending on the type of material.
  • the first layer is a material containing tantalum (Ta)
  • the first layer can be patterned with a dry etching gas containing a halogen-based gas not containing oxygen gas.
  • the first layer is a material containing chromium (Cr)
  • the first layer can be patterned with a chlorine-based dry etching gas.
  • the chlorine-based dry etching gas can contain oxygen gas and does not have to contain oxygen gas.
  • the second layer which is a predetermined Ru-based material, can be patterned with a dry etching gas containing oxygen.
  • a dry etching gas for example, a gas containing oxygen alone and a gas containing oxygen gas and chlorine gas can be used.
  • the protective film 3 is made of a chlorine-based gas. And resistance to dry etching using a dry etching gas using a mixed gas of oxygen gas or oxygen gas. Note that the second layer, which is a predetermined Ru-based material, can be etched by this dry etching gas.
  • the protective film 3 When the material of the protective film 3 is a material containing ruthenium (Ru) as a main component, the protective film 3 has resistance to dry etching using a halogen-based gas not containing oxygen gas. Note that the first layer containing tantalum (Ta) can be etched by this dry etching gas.
  • ruthenium Ru
  • the protective film 3 When the material of the protective film 3 is a material containing ruthenium (Ru) as a main component, the protective film 3 does not contain oxygen gas or is dry using dry etching gas containing chlorine-based gas with reduced oxygen gas. Resistant to etching. With this dry etching gas, the first layer containing chromium (Cr) can be etched.
  • dry etching gas containing chlorine-based gas with reduced oxygen gas. Resistant to etching. With this dry etching gas, the first layer containing chromium (Cr) can be etched.
  • the material type of the protective film 3 and the arrangement of the first layer and the second layer are as follows. preferable.
  • the first layer and the second layer are preferably laminated on the protective film 3 in this order.
  • the first layer containing tantalum (Ta) and / or chromium (Cr) between the protective film 3 containing ruthenium (Ru) and the second layer, the first layer of the phase shift film 4 is arranged.
  • an etching gas resistant to the protective film 3 containing ruthenium (Ru) can be used.
  • the second layer is formed on the protective film 3.
  • the first layer is preferably laminated in this order.
  • the second layer containing ruthenium (Ru) is disposed on the protective film 3 containing the silicon-based material, the second layer containing ruthenium (Ru) of the phase shift film 4 is etched.
  • An etching gas resistant to the protective film 3 containing a system material can be used.
  • the first layer of the phase shift film 4 is made of a material containing tantalum (Ta)
  • the first layer can be patterned with a dry etching gas containing a halogen-based gas not containing oxygen gas.
  • the second layer can be patterned with a dry etching gas containing a chlorine-based gas and an oxygen gas.
  • the material of the first layer containing tantalum (Ta) is resistant to a dry etching gas containing chlorine-based gas and oxygen gas, and the material of the second layer is a dry etching gas containing no oxygen gas. It is because it has tolerance to.
  • the material of the protective film 3 depending on which of the first layer and the second layer is in contact with the protective film 3 (whether it is the lower layer 41). That is, when the first layer is the lower layer 41, a material containing ruthenium (Ru) as a main component can be used as the protective film 3.
  • a silicon-based material particularly a material containing silicon (Si) and oxygen (O) can be used as the protective film 3.
  • the second layer is patterned with a dry etching gas containing oxygen gas, and the first layer is a chlorine-based material containing no oxygen gas. Patterning can be performed with a dry etching gas containing a gas.
  • a material containing ruthenium (Ru) as a main component can be used as the protective film 3.
  • a silicon-based material particularly a material containing silicon (Si) and oxygen (O) can be used as the protective film 3.
  • the phase shift film 4 can be patterned finely and with high accuracy.
  • the second layer and the first layer can be patterned with a dry etching gas containing a chlorine-based gas and an oxygen gas.
  • a dry etching gas containing a chlorine-based gas and an oxygen gas.
  • both the first layer and the second layer can be etched by a single etching process. Therefore, the phase shift film 4 can be patterned with an appropriate throughput.
  • the flow rate ratio of chlorine gas: oxygen gas is preferably 3: 1 to 10: 1.
  • the protective film 3 it is preferable to use a silicon-based material that is resistant to a dry etching gas of a mixed gas of chlorine-based gas and oxygen gas, particularly a material containing silicon (Si) and oxygen (O).
  • a material containing ruthenium (Ru) as a main component can also be used as the protective film 3, but in this case, oxygen gas in the mixed gas is reduced so that the protective film 3 is not etched by the dry etching gas.
  • the flow rate ratio of chlorine gas: oxygen gas is preferably 10: 1 to 40: 1.
  • the etching selectivity of the phase shift film 4 to the protective film 3 in the dry etching using a predetermined dry etching gas (the etching speed of the phase shift film 4). It is possible to select a material having a / etching rate of the protective film 3) of 1.5 or more, preferably 3 or more.
  • a fluorine-based gas and / or a chlorine-based gas can be used as the halogen-based gas used in the dry etching described above.
  • the fluorine-based gas include CF 4 , CHF 3 , C 2 F 6 , C 3 F 6 , C 4 F 6 , C 4 F 8 , CH 2 F 2 , CH 3 F, C 3 F 8 , SF 6 , and F 2 or the like can be used.
  • the chlorine-based gas Cl 2 , SiCl 4 , CHCl 3 , CCl 4 , BCl 3, or the like can be used.
  • a mixed gas containing a fluorine-based gas and / or a chlorine-based gas and O 2 at a predetermined ratio can be used.
  • These etching gases can further contain an inert gas such as He and / or Ar as necessary.
  • the phase difference and the reflectance each indicate a vibrating structure with respect to the thickness of the phase shift film 4. Since the vibration structures of the phase difference and the reflectance are different, it is difficult to obtain a film thickness that simultaneously stabilizes the phase difference and the reflectance.
  • phase difference variation between the surfaces is predetermined.
  • Phase difference of ⁇ 2 degrees for example, when the phase difference is 180 degrees, the range of 180 degrees ⁇ 2 degrees
  • the reflectance variation between the surfaces is a predetermined reflectance ⁇ 0.2% (For example, when the relative reflectance is 6%, the range is 6% ⁇ 0.2%).
  • the upper layer 42 of the phase shift film 4 may be reduced during the removal and / or cleaning of the resist film or the etching mask film, when attention is paid to suppressing the phase difference variation of the phase shift film 4, It is preferable to arrange the second layer having a large contribution to the phase difference in the lower layer 41.
  • phase shift film 4 when the phase shift film 4 is formed of the uppermost layer, the upper layer 42, and the lower layer 41, by suppressing the reflected light of the EUV light from the surface of the uppermost layer, the vibration structure is made gentle and the film thickness variation is prevented. A stable phase difference and reflectance can be obtained.
  • a silicon compound or a tantalum compound having a refractive index larger than that of the upper layer 42 of the phase shift film 4 is preferable.
  • the silicon compound include a material containing Si and at least one element selected from N, O, C, and H, preferably SiO 2 , SiON, and Si 3 N 4 .
  • the tantalum compound examples include a material containing Ta and at least one element selected from N, O, C, H, and B, and a material containing Ta and O is preferable.
  • the film thickness of the uppermost layer is preferably 10 nm or less, more preferably 1 to 6 nm, still more preferably 3 to 5 nm.
  • the uppermost layer can be a SiO 2 film or a Ta 2 O 5 film.
  • phase shift film 4 by making the phase shift film 4 a multilayer film, various functions can be added to each layer.
  • the crystal structure of the phase shift film 4 of the reflective mask blank 100 of this embodiment is preferably amorphous. Since the crystal structure of the phase shift film 4 is amorphous, it is possible to reduce an adverse effect when the phase shift pattern 4a is formed by crystal particles such as metal. Therefore, by making the crystal structure of the phase shift film 4 amorphous, it becomes possible to increase the etching speed when etching the phase shift film 4, improve the pattern shape, and improve the processing characteristics.
  • the first layer which has a higher etching rate than the second layer, in the lower layer 41.
  • etching mask film can be formed on the phase shift film 4 or in contact with the surface of the phase shift film 4.
  • the material of the etching mask film a material that increases the etching selectivity of the phase shift film 4 to the etching mask film is used.
  • the etching selectivity ratio of B with respect to A refers to the ratio of the etching rate between A, which is a layer (a layer serving as a mask), which is not desired to be etched, and B, which is a layer where etching is desired.
  • etching selectivity ratio of B to A etching rate of B / etching rate of A”.
  • high selection ratio means that the value of the selection ratio defined above is large with respect to the comparison target.
  • the etching selection ratio of the phase shift film 4 to the etching mask film is preferably 1.5 or more, and more preferably 3 or more.
  • the second layer predetermined ruthenium (Ru) -based material
  • the second layer can be etched by dry etching using oxygen-containing chlorine-based gas or oxygen gas. It is.
  • a silicon (Si) material or a tantalum (Ta) material is used as the material of the etching mask film in which the etching selectivity of the phase shift film 4 of the predetermined ruthenium (Ru) material to the etching mask film is increased. be able to.
  • the silicon (Si) -based material that can be used for the etching mask film is a material of silicon or a silicon compound.
  • the silicon compound include a material containing Si and at least one element selected from N, O, C, and H, and metal silicon (metal silicide) or metal silicon compound (metal silicide compound) containing a metal in silicon or a silicon compound. ) And the like.
  • the metal silicon compound include a material containing a metal, Si, and at least one element selected from N, O, C, and H.
  • tantalum (Ta) -based materials that can be used as an etching mask film include tantalum (Ta), oxygen (O), nitrogen (N), carbon ( Examples thereof include materials containing one or more elements selected from C), boron (B), and hydrogen (H).
  • tantalum oxide (TaO) tantalum oxynitride (TaON)
  • tantalum boride oxide (TaBO) tantalum boride oxynitride
  • the etching selectivity of the first layer to the etching mask film is high.
  • etching mask film materials include chromium (Cr) -based materials and silicon (Si) -based materials.
  • Cr chromium
  • Si silicon
  • the chromium (Cr) -based material chromium or a chromium compound material can be used.
  • the chromium compound include a material containing Cr and at least one element selected from N, O, C, and H.
  • the silicon compound a material similar to that described in the case where the second layer is the uppermost layer of the phase shift film 4 can be used.
  • the etching selectivity of the first layer to the etching mask film is high.
  • examples of such an etching mask film material include a silicon (Si) -based material and a tantalum (Ta) -based material.
  • the silicon (Si) -based material and the tantalum (Ta) -based material the same materials as those described in the case where the second layer is the uppermost layer of the phase shift film 4 can be used.
  • the film thickness of the etching mask film is desirably 3 nm or more from the viewpoint of obtaining a function as an etching mask for accurately forming the transfer pattern on the phase shift film 4.
  • the thickness of the etching mask film is desirably 15 nm or less from the viewpoint of reducing the thickness of the resist film 11.
  • a back surface conductive film 5 for an electrostatic chuck is formed on the second main surface (back surface) side of the substrate 1 (opposite the surface on which the multilayer reflective film 2 is formed).
  • the electrical characteristics (sheet resistance) required for the back surface conductive film 5 for the electrostatic chuck are usually 100 ⁇ / ⁇ ( ⁇ / Square) or less.
  • the back surface conductive film 5 can be formed, for example, by a magnetron sputtering method or an ion beam sputtering method, using a single metal or alloy target such as chromium and tantalum.
  • the material containing chromium (Cr) of the back surface conductive film 5 is preferably a Cr compound containing Cr and further containing at least one selected from boron, nitrogen, oxygen, and carbon.
  • the Cr compound include CrN, CrON, CrCN, CrCO, CrCON, CrBN, CrBON, CrBCN, and CrBOCN.
  • Ta tantalum
  • Ta tantalum
  • an alloy containing Ta or a Ta compound containing at least one of boron, nitrogen, oxygen, and carbon is used. It is preferable.
  • Ta compounds include TaB, TaN, TaO, TaON, TaCON, TaBN, TaBO, TaBON, TaBCON, TaHf, TaHfO, TaHfN, TaHfON, TaHfCON, TaSi, TaSiO, TaSiN, TaSiON, and TaSiCON. it can.
  • nitrogen (N) present in the surface layer is small.
  • the content of nitrogen in the surface layer of the back surface conductive film 5 made of a material containing tantalum (Ta) or chromium (Cr) is preferably less than 5 atomic%, and substantially does not contain nitrogen in the surface layer. It is more preferable. This is because in the back surface conductive film 5 made of a material containing tantalum (Ta) or chromium (Cr), the wear resistance is higher when the content of nitrogen in the surface layer is smaller.
  • the back conductive film 5 is preferably made of a material containing tantalum and boron.
  • the back surface conductive film 5 is made of a material containing tantalum and boron, the back surface conductive film 5 having wear resistance and chemical resistance can be obtained.
  • the back surface conductive film 5 contains tantalum (Ta) and boron (B), the B content is preferably 5 to 30 atomic%.
  • the ratio of Ta and B (Ta: B) in the sputtering target used for forming the back conductive film 5 is preferably 95: 5 to 70:30.
  • the thickness of the back surface conductive film 5 is not particularly limited as long as the function for the electrostatic chuck is satisfied.
  • the thickness of the back conductive film 5 is usually 10 nm to 200 nm.
  • the back surface conductive film 5 also has stress adjustment on the second main surface side of the mask blank 100, and balances with stress from various films formed on the first main surface side so that a flat reflective mask. It is adjusted so that the blank 100 is obtained.
  • the present embodiment is a reflective mask 200 having a phase shift pattern 4a obtained by patterning the phase shift film 4 of the reflective mask blank 100 described above.
  • the phase shift film 4 of the reflective mask blank 100 described above is patterned by a predetermined dry etching gas (for example, a dry etching gas containing a chlorine-based gas and an oxygen gas).
  • a predetermined dry etching gas for example, a dry etching gas containing a chlorine-based gas and an oxygen gas.
  • the phase shift pattern 4a of the reflective mask 200 absorbs EUV light and reflects a part of the EUV light with a predetermined phase difference (for example, 180 degrees) from the opening (the portion where the phase shift pattern is not formed). can do.
  • an etching mask film is provided on the phase shift film 4 as necessary, and the phase shift film 4 is dry-etched using the etching mask film pattern as a mask to form the phase shift pattern 4a. It may be formed.
  • a reflective mask blank 100 is prepared, and a resist film 11 is formed on the phase shift film 4 on the first main surface (not required when the resist mask 11 is provided as the reflective mask blank 100).
  • a desired pattern is drawn (exposed) on the resist film 11, and further developed and rinsed to form a predetermined resist pattern 11a.
  • the phase shift film 4 (upper layer 42 and lower layer 41) is etched using a predetermined etching gas to form the phase shift pattern 4a.
  • the phase shift pattern 4a is formed by removing 11a with ashing or resist stripping solution. Finally, wet cleaning using an acidic or alkaline aqueous solution is performed.
  • an etching gas for the phase shift film 4 (upper layer 42 and lower layer 41)
  • the material of the phase shift film 4 (upper layer 42 and lower layer 41) and the protective film 3 and the etching gas corresponding thereto By appropriately selecting the material of the phase shift film 4 (upper layer 42 and lower layer 41) and the protective film 3 and the etching gas corresponding thereto, the surface of the protective film 3 is roughened when the phase shift film 4 is etched. Can be prevented.
  • a reflective mask 200 having a high-precision fine pattern with little shadowing effect and little sidewall roughness can be obtained.
  • the present embodiment is a method for manufacturing a semiconductor device.
  • a semiconductor device can be manufactured by setting the reflective mask 200 of this embodiment in an exposure apparatus having an EUV light exposure light source and transferring a transfer pattern to a resist film formed on a transfer substrate. it can.
  • a desired transfer pattern based on the phase shift pattern 4a on the reflective mask 200 is formed on the semiconductor substrate with a shadowing effect. Therefore, it can be formed while suppressing the deterioration of the transfer dimensional accuracy.
  • the phase shift pattern 4a is a fine and highly accurate pattern with little sidewall roughness, a desired pattern can be formed on the semiconductor substrate with high dimensional accuracy.
  • a semiconductor device in which a desired electronic circuit is formed can be manufactured through various processes such as etching of a film to be processed, formation of an insulating film and a conductive film, introduction of a dopant, and annealing. it can.
  • the EUV exposure apparatus includes a laser plasma light source that generates EUV light, an illumination optical system, a mask stage system, a reduction projection optical system, a wafer stage system, and a vacuum facility.
  • the light source is provided with a debris trap function, a cut filter that cuts light of a long wavelength other than exposure light, and equipment for vacuum differential exhaust.
  • the illumination optical system and the reduction projection optical system are composed of reflection type mirrors.
  • the EUV exposure reflective mask 200 is electrostatically adsorbed by the back surface conductive film 5 formed on the second main surface thereof and placed on the mask stage.
  • the light from the EUV light source is applied to the reflective mask 200 through an illumination optical system at an angle inclined by 6 to 8 degrees with respect to the vertical surface of the reflective mask 200.
  • the reflected light from the reflective mask 200 with respect to this incident light is reflected (regular reflection) in the opposite direction to the incident angle and at the same angle as the incident angle, and is usually guided to a reflective projection optical system having a reduction ratio of 1/4.
  • the resist on the wafer (semiconductor substrate) placed on the wafer stage is exposed. During this time, at least the place where EUV light passes is evacuated.
  • a resist pattern can be formed on the semiconductor substrate.
  • a mask having a high-accuracy phase shift pattern that is a thin film with a small shadowing effect and has little sidewall roughness is used. For this reason, the resist pattern formed on the semiconductor substrate becomes a desired one having high dimensional accuracy.
  • etching or the like using this resist pattern as a mask, for example, a predetermined wiring pattern can be formed on the semiconductor substrate.
  • a semiconductor device is manufactured through such other necessary processes such as an exposure process, a processed film processing process, an insulating film or conductive film formation process, a dopant introduction process, or an annealing process.
  • the thickness of the phase shift film 4 can be reduced, the shadowing effect can be reduced, and the fine and highly accurate phase shift pattern 4a can be formed with the sidewall roughness.
  • the reflective mask 200 that can be formed with a small and stable cross-sectional shape can be used for manufacturing a semiconductor device. Therefore, a semiconductor device having a fine and highly accurate transfer pattern can be manufactured.
  • FIG. 2 is a schematic cross-sectional view of an essential part showing a process of manufacturing the reflective mask 200 from the reflective mask blank 100.
  • the reflective mask blank 100 includes a back conductive film 5, a substrate 1, a multilayer reflective film 2, a protective film 3, and a phase shift film 4.
  • the phase shift film 4 of Example 1 includes a lower layer 41 (first layer) of a TaN film and an upper layer 42 of a RuCr film (second layer). Then, as shown in FIG. 2A, a resist film 11 is formed on the phase shift film 4.
  • a SiO 2 —TiO 2 glass substrate which is a low thermal expansion glass substrate of 6025 size (about 152 mm ⁇ 152 mm ⁇ 6.35 mm), in which both main surfaces of the first main surface and the second main surface are polished, did. Polishing including a rough polishing process, a precision polishing process, a local processing process, and a touch polishing process was performed so as to obtain a flat and smooth main surface.
  • a back conductive film 5 made of a CrN film was formed on the second main surface (back surface) of the SiO 2 —TiO 2 glass substrate 1 by a magnetron sputtering (reactive sputtering) method under the following conditions. Formation conditions of the back surface conductive film 5: Cr target, mixed gas atmosphere of Ar and N 2 (Ar: 90%, N: 10%), film thickness 20 nm.
  • the multilayer reflective film 2 was formed on the main surface (first main surface) of the substrate 1 opposite to the side on which the back conductive film 5 was formed.
  • the multilayer reflective film 2 formed on the substrate 1 is a periodic multilayer reflective film made of Mo and Si in order to make the multilayer reflective film 2 suitable for EUV light having a wavelength of 13.5 nm.
  • the multilayer reflective film 2 was formed by alternately stacking Mo layers and Si layers on the substrate 1 by an ion beam sputtering method in an Ar gas atmosphere using a Mo target and a Si target. First, a Si film was formed with a thickness of 4.2 nm, and then a Mo film was formed with a thickness of 2.8 nm.
  • 40 cycles are used, but the present invention is not limited to this. For example, 60 cycles may be used. In the case of 60 cycles, the number of steps is increased as compared with 40 cycles, but the reflectance for EUV light can be increased.
  • a protective film 3 made of a Ru film was formed to a thickness of 2.5 nm by an ion beam sputtering method using a Ru target in an Ar gas atmosphere.
  • a first layer made of a TaN film was formed as the lower layer 41 of the phase shift film 4 by DC magnetron sputtering.
  • the TaN film was formed to a thickness of 15.5 nm by reactive sputtering in a N 2 gas atmosphere using a Ta target.
  • XRD X-ray diffractometer
  • a second layer made of a RuCr film was formed as the upper layer 42 of the phase shift film 4 by DC magnetron sputtering.
  • the RuCr film was formed to a thickness of 22.8 nm in an Ar gas atmosphere using a RuCr target.
  • XRD X-ray diffractometer
  • the relative reflectance at a wavelength of 13.5 nm of the phase shift film 4 made of the above TaN film and RuCr film was 20.1%.
  • the total film thickness of the phase shift film 4 is 38.3 nm.
  • This film thickness is a film thickness corresponding to a phase difference of 180 degrees when the phase shift film 4 is patterned. It was possible to make the film about 41% thinner than the film thickness 65 nm of the phase shift film 4 of the TaN film in Comparative Example 1 described later.
  • a reflective mask 200 was manufactured using the reflective mask blank 100.
  • a resist film 11 was formed to a thickness of 100 nm on the phase shift film 4 of the reflective mask blank 100 (FIG. 2A). Then, a desired pattern was drawn (exposed) on the resist film 11, and further developed and rinsed to form a predetermined resist pattern 11a (FIG. 2B).
  • the upper layer pattern 42a was formed (FIG. 2C).
  • the resist pattern 11a was removed by ashing or resist stripping solution.
  • wet cleaning using pure water (DIW) was performed to manufacture the reflective mask 200 of Example 2 (FIG. 2E). If necessary, a mask defect inspection can be performed after wet cleaning, and mask defect correction can be performed as appropriate.
  • the phase shift film 4 is a TaN film and a RuCr film, the workability in dry etching using a predetermined etching gas is good, and the phase shift pattern 4a is formed with high accuracy. I was able to. Further, the total film thickness of the phase shift pattern 4a is 38.3 nm, which can be made thinner than the absorber film formed of the conventional Ta-based material, and reduces the shadowing effect as compared with Comparative Example 1. I was able to.
  • the reflective mask 200 created in Example 1 has little side wall roughness of the phase shift pattern 4a and a stable cross-sectional shape, so that there is little LER and dimensional in-plane variation of the transferred resist pattern. It had high transfer accuracy.
  • the relative reflectivity of the phase shift surface (the reflectivity relative to the reflectivity of the surface of the multilayer reflective film 2 with the protective film 3) is 20.1%, so that a sufficient phase shift effect is obtained. As a result, it was possible to perform EUV exposure with high exposure latitude and high focus tolerance.
  • the reflective mask 200 produced in Example 1 was set in an EUV scanner, and EUV exposure was performed on a wafer having a film to be processed and a resist film formed on a semiconductor substrate. Then, by developing the exposed resist film, a resist pattern was formed on the semiconductor substrate on which the film to be processed was formed. The resist pattern is transferred to a film to be processed by etching, and a semiconductor device having desired characteristics can be manufactured through various processes such as formation of an insulating film and a conductive film, introduction of a dopant, and annealing. did it.
  • Example 2 In Example 2, a lower layer 41 of a CrOC film (first layer) and an upper layer 42 of a RuNi film (second layer) are used as the phase shift film 4, and the film thickness is set to a phase difference of 180 degrees. This is an embodiment in which is adjusted, and is otherwise the same as the first embodiment.
  • Example 2 As in Example 1, the back surface conductive film 5 made of a CrN film is formed on the second main surface (back surface) of the SiO 2 —TiO 2 glass substrate 1, and the substrate 1 on the opposite side is formed.
  • a multilayer reflective film 2 was formed on the main surface (first main surface), and a protective film 3 made of a Ru film was formed on the surface of the multilayer reflective film 2.
  • a first layer made of a CrOC film was formed as the lower layer 41 of the phase shift film 4 by DC magnetron sputtering.
  • the CrOC film was formed to a thickness of 13.8 nm by reactive sputtering using a mixed gas of Ar gas, CO 2 gas and He gas using a Cr target.
  • XRD X-ray diffractometer
  • a second layer made of a RuNi film was formed as the upper layer 42 of the phase shift film 4 by DC magnetron sputtering.
  • the RuNi film was formed to a thickness of 23.5 nm in an Ar gas atmosphere using a RuNi target.
  • XRD X-ray diffractometer
  • the relative reflectance at a wavelength of 13.5 nm of the phase shift film 4 made of the above CrOC film and RuNi film was 20.2%.
  • the total film thickness of the phase shift film 4 is 37.3 nm.
  • This film thickness is a film thickness corresponding to a phase difference of 180 degrees when the phase shift film 4 is patterned. It was possible to make the film about 43% thinner than the film thickness 65 nm of the phase shift film 4 of the TaN film in Comparative Example 1 described later.
  • Example 2 a reflective mask 200 of Example 2 was manufactured using the reflective mask blank 100.
  • Example 2 As in Example 1, a resist film 11 having a thickness of 100 nm was formed on the phase shift film 4 of the reflective mask blank 100 (FIG. 2A). Then, a desired pattern was drawn (exposed) on the resist film 11, and further developed and rinsed to form a predetermined resist pattern 11a (FIG. 2B).
  • the RuNi film (upper layer 42) was dry etched using O 2 gas to form the upper layer pattern 42a (FIG. 2C).
  • the phase shift film 4 is a CrOC film and a RuNi film, the workability in dry etching using a predetermined etching gas is good, and the phase shift pattern 4a is formed with high accuracy. I was able to. Further, the total film thickness of the phase shift pattern 4a is 37.3 nm, which can be made thinner than the absorber film formed of the conventional Ta-based material, and reduces the shadowing effect as compared with Comparative Example 1. I was able to.
  • the reflective mask 200 created in Example 2 has little sidewall roughness of the phase shift pattern 4a and a stable cross-sectional shape, so that there is little LER and dimensional in-plane variation of the transferred resist pattern. It had high transfer accuracy.
  • the relative reflectance of the phase shift surface is 20.2%, a sufficient phase shift effect is obtained, and EUV exposure with high exposure latitude and high focus tolerance can be performed. .
  • Example 2 As in the case of Example 1, a semiconductor device having desired characteristics could be manufactured using the reflective mask 200 produced in Example 2.
  • Example 3 uses a SiO 2 film as the protective film 3, and uses the lower layer 41 of the RuCo film (second layer) and the upper layer 42 of the TaN film (first layer) as the phase shift film 4. This is an example in which the film thickness is adjusted so as to achieve a phase difference of degrees, and other than that is the same as Example 1.
  • Example 3 As in Example 1, the back surface conductive film 5 made of a CrN film is formed on the second main surface (back surface) of the SiO 2 —TiO 2 glass substrate 1, and the substrate 1 on the opposite side is formed.
  • a multilayer reflective film 2 was formed on the main surface (first main surface).
  • a protective film 3 made of an SiO 2 film was formed to a thickness of 2.5 nm on the surface of the multilayer reflective film 2 by an RF sputtering method using an SiO 2 target in an Ar gas atmosphere.
  • a second layer made of a RuCo film was formed as the lower layer 41 of the phase shift film 4 by DC magnetron sputtering.
  • the RuCo film was formed to a thickness of 23.2 nm in an Ar gas atmosphere using a RuCo target.
  • XRD X-ray diffractometer
  • a first layer made of a TaN film was formed as the upper layer 42 of the phase shift film 4 by DC magnetron sputtering.
  • the TaN film was formed to a thickness of 13.9 nm by reactive sputtering in a N 2 gas atmosphere using a Ta target.
  • XRD X-ray diffractometer
  • the relative reflectance of the phase shift film 4 made of the above RuCo film and TaN film at a wavelength of 13.5 nm was 19.9%.
  • the total film thickness of the phase shift film 4 is 37.1 nm. This film thickness is a film thickness corresponding to a phase difference of 180 degrees when the phase shift film 4 is patterned. It was possible to make the film about 43% thinner than the film thickness 65 nm of the phase shift film 4 of the TaN film in Comparative Example 1 described later.
  • Example 1 the reflective mask 200 of Example 3 was manufactured using the reflective mask blank 100.
  • Example 2 As in Example 1, a resist film 11 having a thickness of 100 nm was formed on the phase shift film 4 of the reflective mask blank 100 (FIG. 2A). Then, a desired pattern was drawn (exposed) on the resist film 11, and further developed and rinsed to form a predetermined resist pattern 11a (FIG. 2B).
  • the TaN film (upper layer 42) was dry-etched using a halogen-based gas to form the upper layer pattern 42a (FIG. 2C). Specifically, the surface oxide film of the TaN film was dry etched using CF 4 gas, and then the TaN film was dry etched using Cl 2 gas.
  • the phase shift film 4 is a TaN film and a RuCo film, the workability in dry etching using a predetermined etching gas is good, and the phase shift pattern 4a is formed with high accuracy. I was able to. Further, the total film thickness of the phase shift pattern 4a is 37.1 nm, which can be made thinner than the absorber film formed of the conventional Ta-based material, and reduces the shadowing effect as compared with Comparative Example 1. I was able to.
  • the reflective mask 200 created in Example 3 has little sidewall roughness of the phase shift pattern 4a and a stable cross-sectional shape, so that there is little LER and dimensional in-plane variation of the transferred resist pattern. It had high transfer accuracy.
  • the relative reflectance of the phase shift surface is 19.9%, a sufficient phase shift effect was obtained, and EUV exposure with high exposure latitude and high focus tolerance could be performed. .
  • Example 3 As in the case of Example 1, a semiconductor device having desired characteristics could be manufactured using the reflective mask 200 produced in Example 3.
  • Example 4 In Example 4, the lower layer 41 of the RuCr film (second layer) and the upper layer 42 of the CrOC film (first layer) are used as the phase shift film 4, and the film thickness is set so as to have a phase difference of 180 degrees. This is an embodiment in which is adjusted, and is otherwise the same as the third embodiment.
  • Example 4 As in Example 3, the back surface conductive film 5 made of a CrN film is formed on the second main surface (back surface) of the SiO 2 —TiO 2 glass substrate 1, and the substrate 1 on the opposite side is formed.
  • a multilayer reflective film 2 and a protective film 3 of SiO 2 film were formed on the main surface (first main surface).
  • a second layer made of a RuCr film was formed as the lower layer 41 of the phase shift film 4 by DC magnetron sputtering.
  • the RuCr film was formed using an RuCr target so as to have a film thickness of 22.2 nm in an Ar gas atmosphere.
  • XRD X-ray diffractometer
  • a first layer made of a CrOC film was formed as the upper layer 42 of the phase shift film 4 by DC magnetron sputtering.
  • the CrOC film was formed to a thickness of 15.4 nm by reactive sputtering using a mixed gas of Ar gas, CO 2 gas and He gas using a Cr target.
  • XRD X-ray diffractometer
  • the relative reflectance at a wavelength of 13.5 nm of the phase shift film 4 made of the above-described RuCr film and CrOC film was 20.2%.
  • the total film thickness of the phase shift film 4 is 37.6 nm. This film thickness is a film thickness corresponding to a phase difference of 180 degrees when the phase shift film 4 is patterned.
  • the film thickness of the phase shift film 4 of the CrOC film in Comparative Example 1 to be described later can be reduced by about 42%.
  • Example 4 a reflective mask 200 of Example 4 was manufactured using the reflective mask blank 100 described above.
  • Example 2 As in Example 1, a resist film 11 having a thickness of 100 nm was formed on the phase shift film 4 of the reflective mask blank 100 (FIG. 2A). Then, a desired pattern was drawn (exposed) on the resist film 11, and further developed and rinsed to form a predetermined resist pattern 11a (FIG. 2B).
  • the upper layer pattern 42a was formed (FIG. 2C).
  • the phase shift film 4 is a CrOC film and a RuCr film
  • the workability in dry etching using a predetermined etching gas is good, and the phase shift pattern 4a is formed with high accuracy. I was able to. Further, since both the CrOC film and the RuCr film can be continuously etched using the same etching gas, the productivity is high. Further, the total film thickness of the phase shift pattern 4a is 37.6 nm, which can be made thinner than the absorber film formed of a conventional Ta-based material, and reduces the shadowing effect as compared with Comparative Example 1. I was able to.
  • the reflective mask 200 created in Example 4 has little sidewall roughness of the phase shift pattern 4a and a stable cross-sectional shape, so that there is little LER and dimensional in-plane variation of the transferred resist pattern. It had high transfer accuracy.
  • the relative reflectance of the phase shift surface is 20.2%, a sufficient phase shift effect is obtained, and EUV exposure with high exposure latitude and high focus tolerance can be performed. .
  • Example 1 As in the case of Example 1, a semiconductor device having desired characteristics could be manufactured using the reflective mask 200 produced in Example 4.
  • Example 5 uses a RuNb film as the protective film 3, and uses the lower layer 41 of the TaN film (first layer) and the upper layer 42 of the RuNb film (second layer) as the phase shift film 4, 180 degrees. This is an example in which the film thickness is adjusted so that the phase difference becomes the same as that of Example 1, and other than that is the same as Example 1.
  • Example 5 the protective film 3 made of a RuNb film was formed on the surface of the multilayer reflective film 2 as in Example 1.
  • the RuNb film was formed to a thickness of 2.5 nm in an Ar gas atmosphere using a RuNb target.
  • a first layer made of a TaN film was formed as a lower layer 41 of the phase shift film 4 on the RuNb film.
  • the TaN film was formed by the same film forming method as in Example 1 so as to have a film thickness of 16.5 nm.
  • the refractive index n and extinction coefficient k at the wavelength of 13.5 nm of the TaN film were the same as those in Example 1.
  • a second layer made of a RuNb film was formed as the upper layer 42 of the phase shift film 4 by DC magnetron sputtering.
  • the RuNb film was formed to a thickness of 22.9 nm in an Ar gas atmosphere using a RuNb target.
  • XRD X-ray diffractometer
  • the relative reflectance at a wavelength of 13.5 nm of the phase shift film 4 was 19.6% (absolute reflectance was 13.1%).
  • the total film thickness of the phase shift film 4 is 39.4 nm. This film thickness is a film thickness corresponding to a phase difference of 180 degrees when the phase shift film 4 is patterned. As a result, the thickness of the phase shift film 4 of the TaN film in Comparative Example 1 described later can be reduced by about 39%.
  • a reflective mask 200 of Example 5 was manufactured using the reflective mask blank 100.
  • the surface oxide film was dry-etched using CF 4 gas, and then dry-etched using Cl 2 gas.
  • the phase shift film 4 is a TaN film and a RuNb film, the workability in dry etching using a predetermined etching gas is good, and the phase shift pattern 4a is formed with high accuracy. I was able to. Further, the total film thickness of the phase shift pattern 4a is 39.4 nm, which can be made thinner than the absorber film formed of a conventional Ta-based material, and reduces the shadowing effect as compared with Comparative Example 1. I was able to.
  • the reflective mask 200 created in Example 5 has little sidewall roughness of the phase shift pattern 4a and a stable cross-sectional shape, so that there is little LER and dimensional in-plane variation of the transferred resist pattern. It had high transfer accuracy.
  • the relative reflectivity of the phase shift surface is 19.6% (absolute reflectivity is 13.1%), a sufficient phase shift effect can be obtained, and exposure latitude and focus latitude are obtained. High EUV exposure.
  • Example 1 a semiconductor device having desired characteristics could be manufactured using the reflective mask 200 produced in Example 5.
  • Example 6 uses a RuNb film as the protective film 3, and uses the lower layer 41 of the CrOC film (first layer) and the upper layer 42 of the RuV film (second layer) as the phase shift film 4, 180 degrees. This is an example in which the film thickness is adjusted so that the phase difference becomes the same as that of Example 1, and other than that is the same as Example 1.
  • Example 6 the protective film 3 made of the same RuNb film as in Example 5 was formed on the surface of the multilayer reflective film 2 as in Example 1.
  • a first layer made of a CrOC film was formed as a lower layer 41 of the phase shift film 4 on the RuNb film.
  • the CrOC film was formed to a thickness of 14.7 nm by the same film formation method as in Example 2.
  • the refractive index n and extinction coefficient k at a wavelength of 13.5 nm of the CrOC film were the same as those in Example 2.
  • a second layer made of a RuV film was formed as the upper layer 42 of the phase shift film 4 by DC magnetron sputtering.
  • the RuV film was formed to a thickness of 24 nm in an Ar gas atmosphere using a RuV target.
  • XRD X-ray diffractometer
  • the relative reflectance at a wavelength of 13.5 nm of the phase shift film 4 was 20.1% (absolute reflectance was 13.4%).
  • the total film thickness of the phase shift film 4 is 38.7 nm. This film thickness is a film thickness corresponding to a phase difference of 180 degrees when the phase shift film 4 is patterned. It was possible to make the film about 40% thinner than the film thickness 65 nm of the phase shift film 4 of the TaN film in Comparative Example 1 described later.
  • Example 6 a reflective mask 200 of Example 6 was manufactured using the reflective mask blank 100.
  • the CrOC film was dry etched using Cl 2 gas.
  • the phase shift film 4 is a CrOC film and a RuV film
  • the workability in dry etching using a predetermined etching gas is good, and the phase shift pattern 4a is formed with high accuracy. I was able to. Further, the total film thickness of the phase shift pattern 4a is 38.7 nm, which can be made thinner than the absorber film formed of the conventional Ta-based material, and reduces the shadowing effect as compared with Comparative Example 1. I was able to.
  • the reflective mask 200 created in Example 6 has little sidewall roughness of the phase shift pattern 4a and a stable cross-sectional shape, so that there is little LER and dimensional in-plane variation of the transferred resist pattern. It had high transfer accuracy.
  • the relative reflectivity of the phase shift surface is 20.1% (absolute reflectivity is 13.4%), a sufficient phase shift effect can be obtained, and exposure latitude and focus tolerance are obtained. High EUV exposure.
  • Example 1 a semiconductor device having desired characteristics could be manufactured using the reflective mask 200 produced in Example 6.
  • Example 7 uses a SiO 2 film as the protective film 3, and uses the lower layer 41 of the RuV film (second layer) and the upper layer 42 of the TaN film (first layer) as the phase shift film 4. This is an example in which the film thickness is adjusted so as to achieve a phase difference of degrees, and other than that is the same as Example 1.
  • Example 7 the protective film 3 made of the same SiO 2 film as in Example 3 was formed on the surface of the multilayer reflective film 2 as in Example 1.
  • a second layer made of a RuV film was formed as a lower layer 41 of the phase shift film 4 on the SiO 2 film.
  • the RuV film was formed to a thickness of 29 nm by the same film forming method as in Example 6.
  • the refractive index n and extinction coefficient k of the RuV film at a wavelength of 13.5 nm were the same as those in Example 6.
  • a second layer made of a TaN film was formed as the upper layer 42 of the phase shift film 4.
  • the TaN film was formed by the same film forming method as in Example 1 so as to have a film thickness of 9.2 nm.
  • the refractive index n and extinction coefficient k at the wavelength of 13.5 nm of the TaN film were the same as those in Example 1.
  • the relative reflectance at a wavelength of 13.5 nm of the phase shift film 4 was 19.9% (absolute reflectance was 13.3%).
  • the total film thickness of the phase shift film 4 is 33.2 nm. This film thickness is a film thickness corresponding to a phase difference of 180 degrees when the phase shift film 4 is patterned.
  • the thickness of the TaN phase shift film 4 in Comparative Example 1 to be described later can be reduced by about 49% from the film thickness of 65 nm.
  • the reflective mask 200 of Example 7 was manufactured using the reflective mask blank 100 as in Example 1.
  • the surface oxide film was dry-etched using CF 4 gas, and then dry-etched using Cl 2 gas.
  • the phase shift film 4 is a RuV film and a TaN film, the workability in dry etching using a predetermined etching gas is good, and the phase shift pattern 4a is formed with high accuracy. I was able to. Further, the total film thickness of the phase shift pattern 4a is 39.4 nm, which can be made thinner than the absorber film formed of a conventional Ta-based material, and reduces the shadowing effect as compared with Comparative Example 1. I was able to.
  • the reflective mask 200 created in Example 7 has little sidewall roughness of the phase shift pattern 4a and a stable cross-sectional shape, so that there is little LER and dimensional in-plane variation of the transferred resist pattern. It had high transfer accuracy.
  • the relative reflectance of the phase shift surface is 19.9% (absolute reflectance is 13.3%), a sufficient phase shift effect can be obtained, and exposure latitude and focus latitude are obtained. High EUV exposure.
  • Example 1 a semiconductor device having desired characteristics could be manufactured using the reflective mask 200 produced in Example 7.
  • Example 8 uses a SiO 2 film as the protective film 3, and uses the lower layer 41 of the RuNb film (second layer) and the upper layer 42 of the CrOC film (first layer) as the phase shift film 4. This is an example in which the film thickness is adjusted so as to achieve a phase difference of degrees, and other than that is the same as Example 1.
  • Example 8 the protective film 3 made of the same SiO 2 film as in Example 3 was formed on the surface of the multilayer reflective film 2 as in Example 1.
  • a second layer made of a RuNb film was formed as a lower layer 41 of the phase shift film 4 on the SiO 2 film.
  • the RuNb film was formed by the same film forming method as in Example 5 so as to have a film thickness of 18.3 nm.
  • the refractive index n and extinction coefficient k at the wavelength of 13.5 nm of the RuNb film were the same as those in Example 5.
  • a second layer made of a CrOC film was formed as the upper layer 42 of the phase shift film 4.
  • the CrOC film was formed by the same film forming method as in Example 1 so as to have a film thickness of 20.7 nm.
  • the refractive index n and extinction coefficient k at a wavelength of 13.5 nm of the CrOC film were the same as those in Example 2.
  • the relative reflectance at a wavelength of 13.5 nm of the phase shift film 4 was 19.7% (absolute reflectance was 13.1%).
  • the total film thickness of the phase shift film 4 is 39 nm. This film thickness is a film thickness corresponding to a phase difference of 180 degrees when the phase shift film 4 is patterned. It was possible to make 40% thinner than the film thickness 65 nm of the phase shift film 4 of the TaN film in Comparative Example 1 described later.
  • the reflective mask 200 of Example 8 was manufactured using the reflective mask blank 100 as in Example 1.
  • the phase shift film 4 is a RuNb film and a CrOC film, the workability in dry etching using a predetermined etching gas is good, and the phase shift pattern 4a is formed with high accuracy. I was able to. Further, the total film thickness of the phase shift pattern 4a is 39 nm, which can be made thinner than the absorber film formed of the conventional Ta-based material, and can reduce the shadowing effect as compared with Comparative Example 1. did it.
  • the reflective mask 200 created in Example 8 has little sidewall roughness of the phase shift pattern 4a and a stable cross-sectional shape, so that there is little LER and dimensional in-plane variation of the transferred resist pattern. It had high transfer accuracy.
  • the relative reflectance of the phase shift surface is 19.7% (absolute reflectance is 13.1%), a sufficient phase shift effect can be obtained, and exposure latitude and focus latitude are obtained. High EUV exposure.
  • Example 8 As in the case of Example 1, a semiconductor device having desired characteristics could be manufactured using the reflective mask 200 produced in Example 8.
  • Comparative Example 1 In Comparative Example 1, the reflective mask blank 100 and the reflective mask 200 were manufactured by the same structure and method as in Example 1 except that a single layer TaN film was used as the phase shift film 4. A semiconductor device was manufactured by the same method.
  • a single-layer TaN film (phase shift film 4) was formed on the protective film 3 having the mask blank structure of Example 1.
  • Ta was used as a target, and reactive sputtering was performed in a mixed gas atmosphere of Xe gas and N 2 gas to form a TaN film.
  • the film thickness of the TaN film is 65 nm, and the element ratio of this film is that Ta is 88 atomic% and N is 12 atomic%.
  • the TaN film formed as described above had a refractive index n and an extinction coefficient (refractive index imaginary part) k at a wavelength of 13.5 nm, respectively.
  • phase shift at a wavelength of 13.5 nm of the phase shift film 4 made of the single layer TaN film is 180 degrees.
  • the reflectance was 1.7% with respect to the multilayer reflective film 2 surface.
  • a resist film 11 is formed on the phase shift film 4 made of a single TaN film by the same method as in Example 1, and a desired pattern is drawn (exposure), developed, and rinsed to form a resist pattern 11a. did. Then, using this resist pattern 11a as a mask, the phase shift film 4 made of a TaN single layer film was dry etched using chlorine gas to form the phase shift pattern 4a. Removal of the resist pattern 11a and mask cleaning were also performed in the same manner as in Example 1 to manufacture the reflective mask 200.
  • the film thickness of the phase shift pattern 4a was 65 nm, and the shadowing effect could not be reduced.
  • the relative reflectance of the phase shift surface was 1.7%. EUV exposure with high light tolerance and focus tolerance could not be performed.
  • the total film thickness of the phase shift films 4 of Examples 1 to 8 was about 40% thinner than the film thickness of 65 nm of the phase shift film 4 of Comparative Example 1. Therefore, it is clear that the shadowing effect can be reduced in the reflective masks 200 of Examples 1 to 8.

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
PCT/JP2019/020635 2018-05-25 2019-05-24 反射型マスクブランク、反射型マスク、並びに反射型マスク及び半導体装置の製造方法 Ceased WO2019225737A1 (ja)

Priority Applications (9)

Application Number Priority Date Filing Date Title
KR1020207027466A KR102906466B1 (ko) 2018-05-25 2019-05-24 반사형 마스크 블랭크, 반사형 마스크, 그리고 반사형 마스크 및 반도체 장치의 제조 방법
KR1020257043335A KR20260003439A (ko) 2018-05-25 2019-05-24 반사형 마스크 블랭크, 반사형 마스크 및 반도체 장치의 제조 방법
SG11202011373SA SG11202011373SA (en) 2018-05-25 2019-05-24 Reflective mask blank, reflective mask, method of manufacturing reflective mask, and method of manufacturing semiconductor device
JP2020520392A JPWO2019225737A1 (ja) 2018-05-25 2019-05-24 反射型マスクブランク、反射型マスク、並びに反射型マスク及び半導体装置の製造方法
US17/056,676 US11550215B2 (en) 2018-05-25 2019-05-24 Reflective mask blank, reflective mask, method of manufacturing reflective mask, and method of manufacturing semiconductor device
US17/990,163 US11815807B2 (en) 2018-05-25 2022-11-18 Reflective mask blank, reflective mask, method of manufacturing reflective mask, and method of manufacturing semiconductor device
US18/483,484 US12105413B2 (en) 2018-05-25 2023-10-09 Reflective mask blank, reflective mask, method of manufacturing reflective mask, and method of manufacturing semiconductor device
US18/797,169 US20240393675A1 (en) 2018-05-25 2024-08-07 Reflective mask blank, reflective mask, method of manufacturing reflective mask, and method of manufacturing semiconductor device
JP2024135205A JP2024153940A (ja) 2018-05-25 2024-08-14 反射型マスクブランク、反射型マスク、並びに反射型マスク及び半導体装置の製造方法

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2018100363 2018-05-25
JP2018-100363 2018-05-25
JP2018-165248 2018-09-04
JP2018165248 2018-09-04

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US17/056,676 A-371-Of-International US11550215B2 (en) 2018-05-25 2019-05-24 Reflective mask blank, reflective mask, method of manufacturing reflective mask, and method of manufacturing semiconductor device
US17/990,163 Continuation US11815807B2 (en) 2018-05-25 2022-11-18 Reflective mask blank, reflective mask, method of manufacturing reflective mask, and method of manufacturing semiconductor device

Publications (1)

Publication Number Publication Date
WO2019225737A1 true WO2019225737A1 (ja) 2019-11-28

Family

ID=68616158

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2019/020635 Ceased WO2019225737A1 (ja) 2018-05-25 2019-05-24 反射型マスクブランク、反射型マスク、並びに反射型マスク及び半導体装置の製造方法

Country Status (6)

Country Link
US (4) US11550215B2 (https=)
JP (2) JPWO2019225737A1 (https=)
KR (2) KR102906466B1 (https=)
SG (1) SG11202011373SA (https=)
TW (3) TW202511858A (https=)
WO (1) WO2019225737A1 (https=)

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210102199A (ko) * 2018-12-27 2021-08-19 호야 가부시키가이샤 반사형 마스크 블랭크, 반사형 마스크, 및 반도체 장치의 제조 방법
WO2021182042A1 (ja) * 2020-03-10 2021-09-16 Hoya株式会社 反射型マスクブランクおよび反射型マスク、並びに半導体デバイスの製造方法
JP2022024617A (ja) * 2020-07-28 2022-02-09 Ａｇｃ株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク、ｅｕｖリソグラフィ用反射型マスク、およびそれらの製造方法
WO2022050156A1 (ja) * 2020-09-04 2022-03-10 Ａｇｃ株式会社 反射型マスク、反射型マスクブランク、および反射型マスクの製造方法
US20220137502A1 (en) * 2020-10-30 2022-05-05 Shin-Etsu Chemical Co., Ltd. Phase shift mask blank, manufacturing method of phase shift mask, and phase shift mask
US20220236635A1 (en) * 2021-01-27 2022-07-28 S&S Tech Co., Ltd. Phase shift blankmask and photomask for euv lithography
KR20220108686A (ko) * 2021-01-27 2022-08-03 주식회사 에스앤에스텍 극자외선 리소그래피용 위상반전 블랭크마스크 및 포토마스크
JP2022130293A (ja) * 2021-02-25 2022-09-06 エスアンドエス テック カンパニー リミテッド 極紫外線リソグラフィ用位相反転ブランクマスク及びフォトマスク
JPWO2023095769A1 (https=) * 2021-11-24 2023-06-01
KR20230109644A (ko) * 2020-12-03 2023-07-20 에이지씨 가부시키가이샤 Euv 리소그래피용 반사형 마스크 블랭크, euv 리소그래피용 반사형 마스크 및 그들의 제조 방법
KR20230137934A (ko) 2021-02-12 2023-10-05 가부시키가이샤 토판 포토마스크 반사형 포토마스크 블랭크 및 반사형 포토마스크
WO2023190696A1 (ja) * 2022-03-29 2023-10-05 株式会社トッパンフォトマスク 反射型フォトマスクブランク及び反射型フォトマスク
US20230375908A1 (en) * 2020-09-28 2023-11-23 Toppan Photomask Co., Ltd. Reflective photomask blank and reflective photomask
KR20230167154A (ko) 2022-04-28 2023-12-07 에이지씨 가부시키가이샤 반사형 마스크 블랭크, 반사형 마스크, 반사형 마스크의 제조 방법
US20240126163A1 (en) * 2022-10-13 2024-04-18 S&S Tech Co., Ltd. Phase shift blankmask and photomask for euv lithography
JP2025031911A (ja) * 2020-12-22 2025-03-07 Hoya株式会社 反射型マスクブランク、反射型マスク、及び半導体デバイスの製造方法
JP2025032361A (ja) * 2021-03-03 2025-03-11 信越化学工業株式会社 反射型マスクブランク及び反射型マスク
JP2025105890A (ja) * 2020-02-13 2025-07-10 Hoya株式会社 反射型マスクブランク、反射型マスク、導電膜付き基板、及び半導体装置の製造方法
KR102955665B1 (ko) 2021-02-16 2026-04-23 에이지씨 가부시키가이샤 Euv 리소그래피용 반사형 마스크 블랭크, euv 리소그래피용 반사형 마스크 및 그것들의 제조 방법

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102906466B1 (ko) 2018-05-25 2026-01-02 호야 가부시키가이샤 반사형 마스크 블랭크, 반사형 마스크, 그리고 반사형 마스크 및 반도체 장치의 제조 방법
TWI886224B (zh) * 2020-03-17 2025-06-11 日商Ｈｏｙａ股份有限公司 光罩基底、光罩之製造方法及顯示裝置之製造方法
JP7679357B2 (ja) * 2020-03-30 2025-05-19 Hoya株式会社 多層反射膜付き基板、反射型マスクブランク、反射型マスク、及び半導体装置の製造方法
KR102850171B1 (ko) * 2021-06-15 2025-08-25 주식회사 에스앤에스텍 극자외선 리소그래피용 위상반전 블랭크마스크 및 포토마스크
KR102882817B1 (ko) * 2021-06-15 2025-11-07 주식회사 에스앤에스텍 극자외선 리소그래피용 위상반전 블랭크마스크 및 포토마스크
KR102837249B1 (ko) * 2021-02-25 2025-07-22 주식회사 에스앤에스텍 극자외선 리소그래피용 위상반전 블랭크마스크 및 포토마스크
KR102850182B1 (ko) * 2021-06-15 2025-08-25 주식회사 에스앤에스텍 극자외선 리소그래피용 위상반전 블랭크마스크 및 포토마스크
JP7315123B1 (ja) 2021-08-27 2023-07-26 Ａｇｃ株式会社 反射型マスクブランク、反射型マスク、反射型マスクブランクの製造方法、及び反射型マスクの製造方法
KR20250153856A (ko) * 2021-12-13 2025-10-27 에이지씨 가부시키가이샤 반사형 마스크 블랭크, 반사형 마스크, 반사형 마스크 블랭크의 제조 방법 및 반사형 마스크의 제조 방법
DE102022202803B4 (de) 2022-03-22 2025-10-09 Carl Zeiss Smt Gmbh Verfahren und Vorrichtung zur Maskenreparatur
DE102022210492B4 (de) 2022-10-04 2025-11-06 Carl Zeiss Smt Gmbh Verfahren und Vorrichtung zur Maskenreparatur

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012151368A (ja) * 2011-01-20 2012-08-09 Dainippon Printing Co Ltd 反射型マスク、およびその製造方法
JP2012256066A (ja) * 2008-11-26 2012-12-27 Hoya Corp マスクブランク用基板
JP2014033221A (ja) * 2008-08-01 2014-02-20 Asahi Glass Co Ltd Ｅｕｖマスクブランクス用基板
WO2015098400A1 (ja) * 2013-12-25 2015-07-02 Hoya株式会社 反射型マスクブランク及び反射型マスク、並びに半導体装置の製造方法
JP2015142083A (ja) * 2014-01-30 2015-08-03 Hoya株式会社 反射型マスクブランク、反射型マスクの製造方法、及び半導体装置の製造方法
WO2016104239A1 (ja) * 2014-12-24 2016-06-30 Hoya株式会社 反射型マスクブランク、反射型マスク及び半導体装置の製造方法
US20160238924A1 (en) * 2015-02-12 2016-08-18 International Business Machines Corporation Structure and method for fixing phase effects on euv mask
WO2017169658A1 (ja) * 2016-03-28 2017-10-05 Hoya株式会社 反射型マスクブランク、反射型マスク及び半導体装置の製造方法

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR0131192B1 (en) 1992-04-22 1998-04-14 Toshiba Corp Exposed mask, fabrication method of exposed mask substrate and patterning method based on exposed mask
JP3339716B2 (ja) * 1992-07-17 2002-10-28 株式会社東芝 露光用マスクの製造方法
JP3417798B2 (ja) 1997-05-19 2003-06-16 株式会社東芝 露光用マスク
JP2004207593A (ja) 2002-12-26 2004-07-22 Toppan Printing Co Ltd 極限紫外線露光用マスク及びブランク並びにパターン転写方法
TWI375114B (en) 2004-10-22 2012-10-21 Shinetsu Chemical Co Photomask-blank, photomask and fabrication method thereof
JP4405585B2 (ja) * 2004-10-22 2010-01-27 信越化学工業株式会社 フォトマスクブランクおよびフォトマスクならびにこれらの製造方法
JP4881633B2 (ja) * 2006-03-10 2012-02-22 凸版印刷株式会社 クロムレス位相シフトマスク用フォトマスクブランク、クロムレス位相シフトマスク、及びクロムレス位相シフトマスクの製造方法
JP5233321B2 (ja) 2008-02-27 2013-07-10 凸版印刷株式会社 極端紫外線露光用マスクブランク、極端紫外線露光用マスク、極端紫外線露光用マスクの製造方法及び極端紫外線露光用マスクを用いたパターン転写方法
KR20110050427A (ko) * 2008-07-14 2011-05-13 아사히 가라스 가부시키가이샤 Ｅｕｖ 리소그래피용 반사형 마스크 블랭크 및 ｅｕｖ 리소그래피용 반사형 마스크
JP5282507B2 (ja) 2008-09-25 2013-09-04 凸版印刷株式会社 ハーフトーン型ｅｕｖマスク、ハーフトーン型ｅｕｖマスクの製造方法、ハーフトーン型ｅｕｖマスクブランク及びパターン転写方法
JP5766393B2 (ja) * 2009-07-23 2015-08-19 株式会社東芝 反射型露光用マスクおよび半導体装置の製造方法
JP2011065113A (ja) * 2009-09-21 2011-03-31 Toshiba Corp 位相シフトマスク、その製造方法及び半導体装置の製造方法
JP2011211083A (ja) * 2010-03-30 2011-10-20 Hoya Corp マスクブランクス、パターン形成方法及びモールドの製造方法
WO2014129527A1 (ja) 2013-02-22 2014-08-28 Hoya株式会社 反射型マスクブランクの製造方法、及び反射型マスクの製造方法
SG11201710317RA (en) * 2015-06-17 2018-01-30 Hoya Corp Substrate with electrically conductive film, substrate with multilayer reflective film, reflective mask blank, reflective mask, and method of manufacturing semiconductor device
TWI623805B (zh) * 2015-08-17 2018-05-11 S&S Tech Co., Ltd. 用於極紫外線微影之空白遮罩及使用其之光罩
JP6855190B2 (ja) * 2016-08-26 2021-04-07 Hoya株式会社 反射型マスク、並びに反射型マスクブランク及び半導体装置の製造方法
SG11202002853TA (en) 2017-10-17 2020-05-28 Hoya Corp Substrate with a multilayer reflective film, reflective mask blank, reflective mask and method of manufacturing semiconductor device
KR102906466B1 (ko) 2018-05-25 2026-01-02 호야 가부시키가이샤 반사형 마스크 블랭크, 반사형 마스크, 그리고 반사형 마스크 및 반도체 장치의 제조 방법

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014033221A (ja) * 2008-08-01 2014-02-20 Asahi Glass Co Ltd Ｅｕｖマスクブランクス用基板
JP2012256066A (ja) * 2008-11-26 2012-12-27 Hoya Corp マスクブランク用基板
JP2012151368A (ja) * 2011-01-20 2012-08-09 Dainippon Printing Co Ltd 反射型マスク、およびその製造方法
WO2015098400A1 (ja) * 2013-12-25 2015-07-02 Hoya株式会社 反射型マスクブランク及び反射型マスク、並びに半導体装置の製造方法
JP2015122468A (ja) * 2013-12-25 2015-07-02 Hoya株式会社 反射型マスクブランク及び反射型マスク、並びに半導体装置の製造方法
JP2015142083A (ja) * 2014-01-30 2015-08-03 Hoya株式会社 反射型マスクブランク、反射型マスクの製造方法、及び半導体装置の製造方法
WO2016104239A1 (ja) * 2014-12-24 2016-06-30 Hoya株式会社 反射型マスクブランク、反射型マスク及び半導体装置の製造方法
JP2016122684A (ja) * 2014-12-24 2016-07-07 Hoya株式会社 反射型マスクブランク及び反射型マスク
US20160238924A1 (en) * 2015-02-12 2016-08-18 International Business Machines Corporation Structure and method for fixing phase effects on euv mask
WO2017169658A1 (ja) * 2016-03-28 2017-10-05 Hoya株式会社 反射型マスクブランク、反射型マスク及び半導体装置の製造方法

Cited By (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102873796B1 (ko) 2018-12-27 2025-10-20 호야 가부시키가이샤 반사형 마스크 블랭크, 반사형 마스크, 및 반도체 장치의 제조 방법
KR20210102199A (ko) * 2018-12-27 2021-08-19 호야 가부시키가이샤 반사형 마스크 블랭크, 반사형 마스크, 및 반도체 장치의 제조 방법
JP2025105890A (ja) * 2020-02-13 2025-07-10 Hoya株式会社 反射型マスクブランク、反射型マスク、導電膜付き基板、及び半導体装置の製造方法
US20230076438A1 (en) * 2020-03-10 2023-03-09 Hoya Corporation Reflective mask blank, reflective mask, and method of manufacturing semiconductor device
WO2021182042A1 (ja) * 2020-03-10 2021-09-16 Hoya株式会社 反射型マスクブランクおよび反射型マスク、並びに半導体デバイスの製造方法
JP2021144075A (ja) * 2020-03-10 2021-09-24 Hoya株式会社 反射型マスクブランクおよび反射型マスク、並びに半導体デバイスの製造方法
US12517422B2 (en) * 2020-03-10 2026-01-06 Hoya Corporation Reflective mask blank, reflective mask, and method of manufacturing semiconductor device
US11822229B2 (en) 2020-07-28 2023-11-21 AGC Inc. Reflective mask blank for EUV lithography, mask blank for EUV lithography, and manufacturing methods thereof
US12216397B2 (en) 2020-07-28 2025-02-04 AGC Inc. Reflective mask blank for EUV lithography, mask blank for EUV lithography, and manufacturing methods thereof
JP2022024617A (ja) * 2020-07-28 2022-02-09 Ａｇｃ株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク、ｅｕｖリソグラフィ用反射型マスク、およびそれらの製造方法
JP7683655B2 (ja) 2020-07-28 2025-05-27 Ａｇｃ株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク、ｅｕｖリソグラフィ用反射型マスク、およびそれらの製造方法
JP2023134697A (ja) * 2020-07-28 2023-09-27 Ａｇｃ株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク、ｅｕｖリソグラフィ用反射型マスク、およびそれらの製造方法
JP7318607B2 (ja) 2020-07-28 2023-08-01 Ａｇｃ株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク、ｅｕｖリソグラフィ用反射型マスク、およびそれらの製造方法
JP7722380B2 (ja) 2020-09-04 2025-08-13 Ａｇｃ株式会社 反射型マスク、反射型マスクブランク、および反射型マスクの製造方法
JPWO2022050156A1 (https=) * 2020-09-04 2022-03-10
WO2022050156A1 (ja) * 2020-09-04 2022-03-10 Ａｇｃ株式会社 反射型マスク、反射型マスクブランク、および反射型マスクの製造方法
US20230375908A1 (en) * 2020-09-28 2023-11-23 Toppan Photomask Co., Ltd. Reflective photomask blank and reflective photomask
US20220137502A1 (en) * 2020-10-30 2022-05-05 Shin-Etsu Chemical Co., Ltd. Phase shift mask blank, manufacturing method of phase shift mask, and phase shift mask
US12197121B2 (en) * 2020-10-30 2025-01-14 Shin-Etsu Chemical Co., Ltd. Phase shift mask blank, manufacturing method of phase shift mask, and phase shift mask
KR102780958B1 (ko) * 2020-12-03 2025-03-17 에이지씨 가부시키가이샤 Euv 리소그래피용 반사형 마스크 블랭크, euv 리소그래피용 반사형 마스크 및 그들의 제조 방법
KR20230109644A (ko) * 2020-12-03 2023-07-20 에이지씨 가부시키가이샤 Euv 리소그래피용 반사형 마스크 블랭크, euv 리소그래피용 반사형 마스크 및 그들의 제조 방법
JP2025031911A (ja) * 2020-12-22 2025-03-07 Hoya株式会社 反射型マスクブランク、反射型マスク、及び半導体デバイスの製造方法
US20220236635A1 (en) * 2021-01-27 2022-07-28 S&S Tech Co., Ltd. Phase shift blankmask and photomask for euv lithography
JP7285911B2 (ja) 2021-01-27 2023-06-02 エスアンドエス テック カンパニー リミテッド 極紫外線リソグラフィ用位相反転ブランクマスク及びフォトマスク
KR20220108686A (ko) * 2021-01-27 2022-08-03 주식회사 에스앤에스텍 극자외선 리소그래피용 위상반전 블랭크마스크 및 포토마스크
JP2022115074A (ja) * 2021-01-27 2022-08-08 エスアンドエス テック カンパニー リミテッド 極紫外線リソグラフィ用位相反転ブランクマスク及びフォトマスク
US11940725B2 (en) 2021-01-27 2024-03-26 S&S Tech Co., Ltd. Phase shift blankmask and photomask for EUV lithography
TWI838682B (zh) * 2021-01-27 2024-04-11 韓商Ｓ＆Ｓ技術股份有限公司 用於ｅｕｖ微影之相移空白罩幕及光罩幕
KR102848045B1 (ko) * 2021-01-27 2025-08-21 주식회사 에스앤에스텍 극자외선 리소그래피용 위상반전 블랭크마스크 및 포토마스크
KR20230137934A (ko) 2021-02-12 2023-10-05 가부시키가이샤 토판 포토마스크 반사형 포토마스크 블랭크 및 반사형 포토마스크
KR102955665B1 (ko) 2021-02-16 2026-04-23 에이지씨 가부시키가이샤 Euv 리소그래피용 반사형 마스크 블랭크, euv 리소그래피용 반사형 마스크 및 그것들의 제조 방법
US11927880B2 (en) 2021-02-25 2024-03-12 S&S Tech Co., Ltd. Phase shift blankmask and photomask for EUV lithography
JP2022130293A (ja) * 2021-02-25 2022-09-06 エスアンドエス テック カンパニー リミテッド 極紫外線リソグラフィ用位相反転ブランクマスク及びフォトマスク
JP7295215B2 (ja) 2021-02-25 2023-06-20 エスアンドエス テック カンパニー リミテッド 極紫外線リソグラフィ用位相反転ブランクマスク及びフォトマスク
JP2025032361A (ja) * 2021-03-03 2025-03-11 信越化学工業株式会社 反射型マスクブランク及び反射型マスク
JP7771214B2 (ja) 2021-11-24 2025-11-17 テクセンドフォトマスク株式会社 反射型フォトマスクブランク及び反射型フォトマスク
WO2023095769A1 (ja) * 2021-11-24 2023-06-01 株式会社トッパンフォトマスク 反射型フォトマスクブランク及び反射型フォトマスク
JPWO2023095769A1 (https=) * 2021-11-24 2023-06-01
JPWO2023190696A1 (https=) * 2022-03-29 2023-10-05
KR20240146079A (ko) 2022-03-29 2024-10-07 가부시키가이샤 토판 포토마스크 반사형 포토마스크 블랭크 및 반사형 포토마스크
WO2023190696A1 (ja) * 2022-03-29 2023-10-05 株式会社トッパンフォトマスク 反射型フォトマスクブランク及び反射型フォトマスク
US12032280B2 (en) 2022-04-28 2024-07-09 AGC Inc. Reflective mask blank, reflective mask, and method for manufacturing reflective mask
KR20240096806A (ko) 2022-04-28 2024-06-26 에이지씨 가부시키가이샤 반사형 마스크 블랭크, 반사형 마스크, 반사형 마스크의 제조 방법
KR20230167154A (ko) 2022-04-28 2023-12-07 에이지씨 가부시키가이샤 반사형 마스크 블랭크, 반사형 마스크, 반사형 마스크의 제조 방법
JP2024062322A (ja) * 2022-10-13 2024-05-09 エスアンドエス テック カンパニー リミテッド 極紫外線リソグラフィ用位相反転ブランクマスク及びフォトマスク
JP7475106B1 (ja) 2022-10-13 2024-04-26 エスアンドエス テック カンパニー リミテッド 極紫外線リソグラフィ用位相反転ブランクマスク及びフォトマスク
US20240126163A1 (en) * 2022-10-13 2024-04-18 S&S Tech Co., Ltd. Phase shift blankmask and photomask for euv lithography

Also Published As

Publication number Publication date
JPWO2019225737A1 (ja) 2021-06-10
US20240036458A1 (en) 2024-02-01
TW202004326A (zh) 2020-01-16
KR102906466B1 (ko) 2026-01-02
JP2024153940A (ja) 2024-10-29
US20240393675A1 (en) 2024-11-28
US11815807B2 (en) 2023-11-14
US12105413B2 (en) 2024-10-01
US20230087016A1 (en) 2023-03-23
US11550215B2 (en) 2023-01-10
US20210223681A1 (en) 2021-07-22
TW202349105A (zh) 2023-12-16
KR20210013008A (ko) 2021-02-03
SG11202011373SA (en) 2020-12-30
TWI811369B (zh) 2023-08-11
TWI867651B (zh) 2024-12-21
KR20260003439A (ko) 2026-01-06
TW202511858A (zh) 2025-03-16

Similar Documents

Publication Publication Date Title
US12105413B2 (en) Reflective mask blank, reflective mask, method of manufacturing reflective mask, and method of manufacturing semiconductor device
US12111566B2 (en) Reflective mask blank, reflective mask and manufacturing method thereof, and semiconductor device manufacturing method
WO2018159785A1 (ja) 反射型マスクブランク、反射型マスク及びその製造方法、並びに半導体装置の製造方法
JPWO2018135468A1 (ja) 導電膜付き基板、多層反射膜付き基板、反射型マスクブランク、反射型マスク及び半導体装置の製造方法
JP6475400B2 (ja) 反射型マスクブランク、反射型マスク及びその製造方法、並びに半導体装置の製造方法
WO2018074512A1 (ja) 反射型マスクブランク、反射型マスクの製造方法、及び半導体装置の製造方法
WO2020184473A1 (ja) 反射型マスクブランク、反射型マスク及びその製造方法、並びに半導体装置の製造方法
JP6440996B2 (ja) 反射型マスクブランク及びその製造方法、反射型マスクの製造方法、並びに半導体装置の製造方法
JP2016046370A5 (https=)

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 19808011

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 2020520392

Country of ref document: JP

Kind code of ref document: A

ENP Entry into the national phase

Ref document number: 20207027466

Country of ref document: KR

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 19808011

Country of ref document: EP

Kind code of ref document: A1