JPWO2022050156A1 - - Google Patents
Info
- Publication number
- JPWO2022050156A1 JPWO2022050156A1 JP2022546271A JP2022546271A JPWO2022050156A1 JP WO2022050156 A1 JPWO2022050156 A1 JP WO2022050156A1 JP 2022546271 A JP2022546271 A JP 2022546271A JP 2022546271 A JP2022546271 A JP 2022546271A JP WO2022050156 A1 JPWO2022050156 A1 JP WO2022050156A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
- G03F1/24—Reflection masks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/42—Alignment or registration features, e.g. alignment marks on the mask substrates
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/80—Etching
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020148984 | 2020-09-04 | ||
| JP2020148984 | 2020-09-04 | ||
| PCT/JP2021/031257 WO2022050156A1 (ja) | 2020-09-04 | 2021-08-25 | 反射型マスク、反射型マスクブランク、および反射型マスクの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2022050156A1 true JPWO2022050156A1 (https=) | 2022-03-10 |
| JP7722380B2 JP7722380B2 (ja) | 2025-08-13 |
Family
ID=80490940
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022546271A Active JP7722380B2 (ja) | 2020-09-04 | 2021-08-25 | 反射型マスク、反射型マスクブランク、および反射型マスクの製造方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20230185181A1 (https=) |
| JP (1) | JP7722380B2 (https=) |
| KR (1) | KR20230058395A (https=) |
| TW (1) | TW202225819A (https=) |
| WO (1) | WO2022050156A1 (https=) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023210667A1 (ja) * | 2022-04-28 | 2023-11-02 | Ａｇｃ株式会社 | 反射型マスクブランク、反射型マスクブランクの製造方法、反射型マスク、反射型マスクの製造方法 |
| JP7367901B1 (ja) * | 2022-04-28 | 2023-10-24 | Ａｇｃ株式会社 | 反射型マスクブランク、反射型マスクブランクの製造方法、反射型マスク、反射型マスクの製造方法 |
| JPWO2024029410A1 (https=) * | 2022-08-03 | 2024-02-08 | ||
| WO2024247713A1 (ja) * | 2023-05-31 | 2024-12-05 | Ａｇｃ株式会社 | 反射型マスクブランク、反射型マスク、反射型マスクブランクの製造方法、及び反射型マスクの製造方法 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009212220A (ja) * | 2008-03-03 | 2009-09-17 | Toshiba Corp | 反射型マスク及びその作製方法 |
| WO2010007955A1 (ja) * | 2008-07-14 | 2010-01-21 | 旭硝子株式会社 | Ｅｕｖリソグラフィ用反射型マスクブランク、および、ｅｕｖリソグラフィ用反射型マスク |
| JP2014168019A (ja) * | 2013-02-28 | 2014-09-11 | Toshiba Corp | Ｅｕｖ露光用の光反射型フォトマスク及びマスクブランク、並びに半導体装置の製造方法 |
| WO2019225737A1 (ja) * | 2018-05-25 | 2019-11-28 | Hoya株式会社 | 反射型マスクブランク、反射型マスク、並びに反射型マスク及び半導体装置の製造方法 |
| WO2020137928A1 (ja) * | 2018-12-27 | 2020-07-02 | Hoya株式会社 | 反射型マスクブランク、反射型マスク、及び半導体装置の製造方法 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3411613B2 (ja) | 1993-03-26 | 2003-06-03 | Ｈｏｙａ株式会社 | ハーフトーン型位相シフトマスク |
| KR100215850B1 (ko) | 1996-04-12 | 1999-08-16 | 구본준 | 하프톤 위상 반전 마스크 및_그제조방법 |
| JP5295553B2 (ja) | 2007-12-07 | 2013-09-18 | 株式会社東芝 | 反射型マスク |
-
2021
- 2021-08-25 WO PCT/JP2021/031257 patent/WO2022050156A1/ja not_active Ceased
- 2021-08-25 JP JP2022546271A patent/JP7722380B2/ja active Active
- 2021-08-25 KR KR1020237006724A patent/KR20230058395A/ko not_active Withdrawn
- 2021-09-01 TW TW110132438A patent/TW202225819A/zh unknown
-
2023
- 2023-02-09 US US18/166,715 patent/US20230185181A1/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009212220A (ja) * | 2008-03-03 | 2009-09-17 | Toshiba Corp | 反射型マスク及びその作製方法 |
| WO2010007955A1 (ja) * | 2008-07-14 | 2010-01-21 | 旭硝子株式会社 | Ｅｕｖリソグラフィ用反射型マスクブランク、および、ｅｕｖリソグラフィ用反射型マスク |
| JP2014168019A (ja) * | 2013-02-28 | 2014-09-11 | Toshiba Corp | Ｅｕｖ露光用の光反射型フォトマスク及びマスクブランク、並びに半導体装置の製造方法 |
| WO2019225737A1 (ja) * | 2018-05-25 | 2019-11-28 | Hoya株式会社 | 反射型マスクブランク、反射型マスク、並びに反射型マスク及び半導体装置の製造方法 |
| WO2020137928A1 (ja) * | 2018-12-27 | 2020-07-02 | Hoya株式会社 | 反射型マスクブランク、反射型マスク、及び半導体装置の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| TW202225819A (zh) | 2022-07-01 |
| KR20230058395A (ko) | 2023-05-03 |
| JP7722380B2 (ja) | 2025-08-13 |
| US20230185181A1 (en) | 2023-06-15 |
| WO2022050156A1 (ja) | 2022-03-10 |
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