JPWO2024029410A1 - - Google Patents
Info
- Publication number
- JPWO2024029410A1 JPWO2024029410A1 JP2024539094A JP2024539094A JPWO2024029410A1 JP WO2024029410 A1 JPWO2024029410 A1 JP WO2024029410A1 JP 2024539094 A JP2024539094 A JP 2024539094A JP 2024539094 A JP2024539094 A JP 2024539094A JP WO2024029410 A1 JPWO2024029410 A1 JP WO2024029410A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
- G03F1/24—Reflection masks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/48—Protective coatings
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022124355 | 2022-08-03 | ||
| PCT/JP2023/027272 WO2024029410A1 (ja) | 2022-08-03 | 2023-07-25 | 反射型マスクブランク及び反射型マスク |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2024029410A1 true JPWO2024029410A1 (https=) | 2024-02-08 |
| JPWO2024029410A5 JPWO2024029410A5 (https=) | 2025-04-16 |
Family
ID=89849013
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024539094A Pending JPWO2024029410A1 (https=) | 2022-08-03 | 2023-07-25 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20250172864A1 (https=) |
| JP (1) | JPWO2024029410A1 (https=) |
| KR (1) | KR20250047993A (https=) |
| TW (1) | TW202409710A (https=) |
| WO (1) | WO2024029410A1 (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7681153B1 (ja) * | 2024-04-11 | 2025-05-21 | テクセンドフォトマスク株式会社 | 反射型フォトマスクブランク、反射型フォトマスク及び反射型フォトマスクの製造方法 |
| WO2025239179A1 (ja) * | 2024-05-13 | 2025-11-20 | Ａｇｃ株式会社 | 反射型マスクブランク、反射型マスク、反射型マスクの製造方法 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5766393B2 (ja) | 2009-07-23 | 2015-08-19 | 株式会社東芝 | 反射型露光用マスクおよび半導体装置の製造方法 |
| TW202532958A (zh) * | 2018-05-25 | 2025-08-16 | 日商Ｈｏｙａ股份有限公司 | 反射型光罩基底、反射型光罩、以及反射型光罩與半導體裝置之製造方法 |
| WO2021132111A1 (ja) * | 2019-12-27 | 2021-07-01 | Ａｇｃ株式会社 | Ｅｕｖリソグラフィ用反射型マスクブランク、ｅｕｖリソグラフィ用反射型マスク、およびそれらの製造方法 |
| JP6929983B1 (ja) * | 2020-03-10 | 2021-09-01 | Hoya株式会社 | 反射型マスクブランクおよび反射型マスク、並びに半導体デバイスの製造方法 |
| JP7318607B2 (ja) * | 2020-07-28 | 2023-08-01 | Ａｇｃ株式会社 | Ｅｕｖリソグラフィ用反射型マスクブランク、ｅｕｖリソグラフィ用反射型マスク、およびそれらの製造方法 |
| WO2022050156A1 (ja) * | 2020-09-04 | 2022-03-10 | Ａｇｃ株式会社 | 反射型マスク、反射型マスクブランク、および反射型マスクの製造方法 |
| WO2022065144A1 (ja) * | 2020-09-28 | 2022-03-31 | Hoya株式会社 | 多層反射膜付き基板、反射型マスクブランク、反射型マスクの製造方法、及び半導体装置の製造方法 |
-
2023
- 2023-07-25 JP JP2024539094A patent/JPWO2024029410A1/ja active Pending
- 2023-07-25 KR KR1020257002973A patent/KR20250047993A/ko active Pending
- 2023-07-25 WO PCT/JP2023/027272 patent/WO2024029410A1/ja not_active Ceased
- 2023-07-28 TW TW112128451A patent/TW202409710A/zh unknown
-
2025
- 2025-01-16 US US19/026,266 patent/US20250172864A1/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| KR20250047993A (ko) | 2025-04-07 |
| TW202409710A (zh) | 2024-03-01 |
| WO2024029410A1 (ja) | 2024-02-08 |
| US20250172864A1 (en) | 2025-05-29 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20250122 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20260209 |