KR20230058395A - 반사형 마스크, 반사형 마스크 블랭크 및 반사형 마스크의 제조 방법 - Google Patents

반사형 마스크, 반사형 마스크 블랭크 및 반사형 마스크의 제조 방법 Download PDF

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Publication number
KR20230058395A
KR20230058395A KR1020237006724A KR20237006724A KR20230058395A KR 20230058395 A KR20230058395 A KR 20230058395A KR 1020237006724 A KR1020237006724 A KR 1020237006724A KR 20237006724 A KR20237006724 A KR 20237006724A KR 20230058395 A KR20230058395 A KR 20230058395A
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KR
South Korea
Prior art keywords
film
phase shift
reflective mask
light
reflective
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1020237006724A
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English (en)
Korean (ko)
Inventor
히로요시 타나베
Original Assignee
에이지씨 가부시키가이샤
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Publication date
Application filed by 에이지씨 가부시키가이샤 filed Critical 에이지씨 가부시키가이샤
Publication of KR20230058395A publication Critical patent/KR20230058395A/ko
Withdrawn legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/42—Alignment or registration features, e.g. alignment marks on the mask substrates
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
KR1020237006724A 2020-09-04 2021-08-25 반사형 마스크, 반사형 마스크 블랭크 및 반사형 마스크의 제조 방법 Withdrawn KR20230058395A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2020-148984 2020-09-04
JP2020148984 2020-09-04
PCT/JP2021/031257 WO2022050156A1 (ja) 2020-09-04 2021-08-25 反射型マスク、反射型マスクブランク、および反射型マスクの製造方法

Publications (1)

Publication Number Publication Date
KR20230058395A true KR20230058395A (ko) 2023-05-03

Family

ID=80490940

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020237006724A Withdrawn KR20230058395A (ko) 2020-09-04 2021-08-25 반사형 마스크, 반사형 마스크 블랭크 및 반사형 마스크의 제조 방법

Country Status (5)

Country Link
US (1) US20230185181A1 (https=)
JP (1) JP7722380B2 (https=)
KR (1) KR20230058395A (https=)
TW (1) TW202225819A (https=)
WO (1) WO2022050156A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023210667A1 (ja) * 2022-04-28 2023-11-02 Ａｇｃ株式会社 反射型マスクブランク、反射型マスクブランクの製造方法、反射型マスク、反射型マスクの製造方法
JP7367901B1 (ja) * 2022-04-28 2023-10-24 Ａｇｃ株式会社 反射型マスクブランク、反射型マスクブランクの製造方法、反射型マスク、反射型マスクの製造方法
JPWO2024029410A1 (https=) * 2022-08-03 2024-02-08
WO2024247713A1 (ja) * 2023-05-31 2024-12-05 Ａｇｃ株式会社 反射型マスクブランク、反射型マスク、反射型マスクブランクの製造方法、及び反射型マスクの製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06282063A (ja) 1993-03-26 1994-10-07 Hoya Corp ハーフトーン型位相シフトマスク
JP2942816B2 (ja) 1996-04-12 1999-08-30 エルジイ・セミコン・カンパニイ・リミテッド ハーフトーン位相シフトマスクの構造及びその製造方法
JP2009141223A (ja) 2007-12-07 2009-06-25 Toshiba Corp 反射型マスク

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4602430B2 (ja) * 2008-03-03 2010-12-22 株式会社東芝 反射型マスク及びその作製方法
KR20110050427A (ko) * 2008-07-14 2011-05-13 아사히 가라스 가부시키가이샤 Ｅｕｖ 리소그래피용 반사형 마스크 블랭크 및 ｅｕｖ 리소그래피용 반사형 마스크
JP5881633B2 (ja) * 2013-02-28 2016-03-09 株式会社東芝 Ｅｕｖ露光用の光反射型フォトマスク及びマスクブランク、並びに半導体装置の製造方法
KR102906466B1 (ko) * 2018-05-25 2026-01-02 호야 가부시키가이샤 반사형 마스크 블랭크, 반사형 마스크, 그리고 반사형 마스크 및 반도체 장치의 제조 방법
JP7250511B2 (ja) * 2018-12-27 2023-04-03 Hoya株式会社 反射型マスクブランク、反射型マスク、及び半導体装置の製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06282063A (ja) 1993-03-26 1994-10-07 Hoya Corp ハーフトーン型位相シフトマスク
JP2942816B2 (ja) 1996-04-12 1999-08-30 エルジイ・セミコン・カンパニイ・リミテッド ハーフトーン位相シフトマスクの構造及びその製造方法
JP2009141223A (ja) 2007-12-07 2009-06-25 Toshiba Corp 反射型マスク

Also Published As

Publication number Publication date
TW202225819A (zh) 2022-07-01
JP7722380B2 (ja) 2025-08-13
US20230185181A1 (en) 2023-06-15
JPWO2022050156A1 (https=) 2022-03-10
WO2022050156A1 (ja) 2022-03-10

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