TW202225819A - 反射型遮罩、反射型遮罩基底、及反射型遮罩之製造方法 - Google Patents

反射型遮罩、反射型遮罩基底、及反射型遮罩之製造方法 Download PDF

Info

Publication number
TW202225819A
TW202225819A TW110132438A TW110132438A TW202225819A TW 202225819 A TW202225819 A TW 202225819A TW 110132438 A TW110132438 A TW 110132438A TW 110132438 A TW110132438 A TW 110132438A TW 202225819 A TW202225819 A TW 202225819A
Authority
TW
Taiwan
Prior art keywords
film
phase shift
light
reflective mask
semi
Prior art date
Application number
TW110132438A
Other languages
English (en)
Chinese (zh)
Inventor
田邊容由
Original Assignee
日商Ａｇｃ股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商Ａｇｃ股份有限公司 filed Critical 日商Ａｇｃ股份有限公司
Publication of TW202225819A publication Critical patent/TW202225819A/zh

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/42—Alignment or registration features, e.g. alignment marks on the mask substrates
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
TW110132438A 2020-09-04 2021-09-01 反射型遮罩、反射型遮罩基底、及反射型遮罩之製造方法 TW202225819A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020148984 2020-09-04
JP2020-148984 2020-09-04

Publications (1)

Publication Number Publication Date
TW202225819A true TW202225819A (zh) 2022-07-01

Family

ID=80490940

Family Applications (1)

Application Number Title Priority Date Filing Date
TW110132438A TW202225819A (zh) 2020-09-04 2021-09-01 反射型遮罩、反射型遮罩基底、及反射型遮罩之製造方法

Country Status (5)

Country Link
US (1) US20230185181A1 (https=)
JP (1) JP7722380B2 (https=)
KR (1) KR20230058395A (https=)
TW (1) TW202225819A (https=)
WO (1) WO2022050156A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023210667A1 (ja) * 2022-04-28 2023-11-02 Ａｇｃ株式会社 反射型マスクブランク、反射型マスクブランクの製造方法、反射型マスク、反射型マスクの製造方法
JP7367901B1 (ja) * 2022-04-28 2023-10-24 Ａｇｃ株式会社 反射型マスクブランク、反射型マスクブランクの製造方法、反射型マスク、反射型マスクの製造方法
JPWO2024029410A1 (https=) * 2022-08-03 2024-02-08
WO2024247713A1 (ja) * 2023-05-31 2024-12-05 Ａｇｃ株式会社 反射型マスクブランク、反射型マスク、反射型マスクブランクの製造方法、及び反射型マスクの製造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3411613B2 (ja) 1993-03-26 2003-06-03 Ｈｏｙａ株式会社 ハーフトーン型位相シフトマスク
KR100215850B1 (ko) 1996-04-12 1999-08-16 구본준 하프톤 위상 반전 마스크 및_그제조방법
JP5295553B2 (ja) 2007-12-07 2013-09-18 株式会社東芝 反射型マスク
JP4602430B2 (ja) * 2008-03-03 2010-12-22 株式会社東芝 反射型マスク及びその作製方法
KR20110050427A (ko) * 2008-07-14 2011-05-13 아사히 가라스 가부시키가이샤 Ｅｕｖ 리소그래피용 반사형 마스크 블랭크 및 ｅｕｖ 리소그래피용 반사형 마스크
JP5881633B2 (ja) * 2013-02-28 2016-03-09 株式会社東芝 Ｅｕｖ露光用の光反射型フォトマスク及びマスクブランク、並びに半導体装置の製造方法
KR102906466B1 (ko) * 2018-05-25 2026-01-02 호야 가부시키가이샤 반사형 마스크 블랭크, 반사형 마스크, 그리고 반사형 마스크 및 반도체 장치의 제조 방법
JP7250511B2 (ja) * 2018-12-27 2023-04-03 Hoya株式会社 反射型マスクブランク、反射型マスク、及び半導体装置の製造方法

Also Published As

Publication number Publication date
KR20230058395A (ko) 2023-05-03
JP7722380B2 (ja) 2025-08-13
US20230185181A1 (en) 2023-06-15
JPWO2022050156A1 (https=) 2022-03-10
WO2022050156A1 (ja) 2022-03-10

Similar Documents

Publication Publication Date Title
TWI862261B (zh) 反射型遮罩基底、反射型遮罩以及半導體裝置之製造方法
US8367279B2 (en) Reflective mask blank, reflective mask, and method of manufacturing the same
JP5711533B2 (ja) 反射型マスク、反射型マスクブランク及びその製造方法
US8828627B2 (en) Reflective mask blank for EUV lithography and reflective mask for EUV lithography
JP4212025B2 (ja) 反射型マスクブランクス及び反射型マスク並びに反射型マスクの製造方法
JP7722380B2 (ja) 反射型マスク、反射型マスクブランク、および反射型マスクの製造方法
KR102048487B1 (ko) 다층 반사막 부착 기판의 제조 방법, 반사형 마스크 블랭크의 제조 방법 및 반사형 마스크의 제조 방법
US8081384B2 (en) Multilayer reflective film coated substrate, manufacturing method thereof, reflective mask blank, and reflective mask
CN112505999B (zh) 反射性掩模坯料的制造方法、反射性掩模坯料和反射性掩模的制造方法
TWI801587B (zh) 遮罩基底、相位轉移遮罩以及半導體元件之製造方法
TWI822945B (zh) 反射型光罩基底、反射型光罩、及反射型光罩基底之製造方法
TW201831987A (zh) 反射型光罩基底、反射型光罩及其製造方法、與半導體裝置之製造方法
TWI791837B (zh) 遮罩基底、相移遮罩及半導體元件之製造方法
JP7544222B2 (ja) 反射型マスクブランクおよび反射型マスク
JP2007335908A (ja) 反射型マスクブランクス及び反射型マスク
US7804648B2 (en) Multilayer reflective film coated substrate, manufacturing method thereof, reflective mask blank, and reflective mask
JP7633032B2 (ja) 描画評価用マスクブランクス
TWI830983B (zh) 極紫外光微影相移光罩
TW202240279A (zh) 光罩基底、反射型光罩、及半導體裝置之製造方法
JP4834205B2 (ja) 多層反射膜付き基板の製造方法、反射型マスクブランクの製造方法、及び反射型マスクの製造方法
TW202227898A (zh) Euvl用反射型光罩基底、euvl用反射型光罩、及euvl用反射型光罩之製造方法
JP7718615B1 (ja) 反射型マスクおよび半導体装置の製造方法
JP2012124196A (ja) Ｅｕｖ露光用反射型位相シフトマスクの製造方法
JP2014090131A (ja) 反射型マスクの製造方法
TW202443289A (zh) 反射型遮罩基底及反射型遮罩、以及反射型遮罩及半導體裝置之製造方法