JP7722380B2 - 反射型マスク、反射型マスクブランク、および反射型マスクの製造方法 - Google Patents

反射型マスク、反射型マスクブランク、および反射型マスクの製造方法

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Publication number
JP7722380B2
JP7722380B2 JP2022546271A JP2022546271A JP7722380B2 JP 7722380 B2 JP7722380 B2 JP 7722380B2 JP 2022546271 A JP2022546271 A JP 2022546271A JP 2022546271 A JP2022546271 A JP 2022546271A JP 7722380 B2 JP7722380 B2 JP 7722380B2
Authority
JP
Japan
Prior art keywords
film
light
phase shift
reflective mask
semi
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2022546271A
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English (en)
Japanese (ja)
Other versions
JPWO2022050156A1 (https=
Inventor
容由 田邊
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AGC Inc
Original Assignee
Asahi Glass Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Glass Co Ltd filed Critical Asahi Glass Co Ltd
Publication of JPWO2022050156A1 publication Critical patent/JPWO2022050156A1/ja
Application granted granted Critical
Publication of JP7722380B2 publication Critical patent/JP7722380B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/42—Alignment or registration features, e.g. alignment marks on the mask substrates
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
JP2022546271A 2020-09-04 2021-08-25 反射型マスク、反射型マスクブランク、および反射型マスクの製造方法 Active JP7722380B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020148984 2020-09-04
JP2020148984 2020-09-04
PCT/JP2021/031257 WO2022050156A1 (ja) 2020-09-04 2021-08-25 反射型マスク、反射型マスクブランク、および反射型マスクの製造方法

Publications (2)

Publication Number Publication Date
JPWO2022050156A1 JPWO2022050156A1 (https=) 2022-03-10
JP7722380B2 true JP7722380B2 (ja) 2025-08-13

Family

ID=80490940

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022546271A Active JP7722380B2 (ja) 2020-09-04 2021-08-25 反射型マスク、反射型マスクブランク、および反射型マスクの製造方法

Country Status (5)

Country Link
US (1) US20230185181A1 (https=)
JP (1) JP7722380B2 (https=)
KR (1) KR20230058395A (https=)
TW (1) TW202225819A (https=)
WO (1) WO2022050156A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023210667A1 (ja) * 2022-04-28 2023-11-02 Ａｇｃ株式会社 反射型マスクブランク、反射型マスクブランクの製造方法、反射型マスク、反射型マスクの製造方法
JP7367901B1 (ja) * 2022-04-28 2023-10-24 Ａｇｃ株式会社 反射型マスクブランク、反射型マスクブランクの製造方法、反射型マスク、反射型マスクの製造方法
JPWO2024029410A1 (https=) * 2022-08-03 2024-02-08
WO2024247713A1 (ja) * 2023-05-31 2024-12-05 Ａｇｃ株式会社 反射型マスクブランク、反射型マスク、反射型マスクブランクの製造方法、及び反射型マスクの製造方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009212220A (ja) 2008-03-03 2009-09-17 Toshiba Corp 反射型マスク及びその作製方法
WO2010007955A1 (ja) 2008-07-14 2010-01-21 旭硝子株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク、および、ｅｕｖリソグラフィ用反射型マスク
JP2014168019A (ja) 2013-02-28 2014-09-11 Toshiba Corp Ｅｕｖ露光用の光反射型フォトマスク及びマスクブランク、並びに半導体装置の製造方法
WO2019225737A1 (ja) 2018-05-25 2019-11-28 Hoya株式会社 反射型マスクブランク、反射型マスク、並びに反射型マスク及び半導体装置の製造方法
WO2020137928A1 (ja) 2018-12-27 2020-07-02 Hoya株式会社 反射型マスクブランク、反射型マスク、及び半導体装置の製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3411613B2 (ja) 1993-03-26 2003-06-03 Ｈｏｙａ株式会社 ハーフトーン型位相シフトマスク
KR100215850B1 (ko) 1996-04-12 1999-08-16 구본준 하프톤 위상 반전 마스크 및_그제조방법
JP5295553B2 (ja) 2007-12-07 2013-09-18 株式会社東芝 反射型マスク

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009212220A (ja) 2008-03-03 2009-09-17 Toshiba Corp 反射型マスク及びその作製方法
WO2010007955A1 (ja) 2008-07-14 2010-01-21 旭硝子株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク、および、ｅｕｖリソグラフィ用反射型マスク
JP2014168019A (ja) 2013-02-28 2014-09-11 Toshiba Corp Ｅｕｖ露光用の光反射型フォトマスク及びマスクブランク、並びに半導体装置の製造方法
WO2019225737A1 (ja) 2018-05-25 2019-11-28 Hoya株式会社 反射型マスクブランク、反射型マスク、並びに反射型マスク及び半導体装置の製造方法
WO2020137928A1 (ja) 2018-12-27 2020-07-02 Hoya株式会社 反射型マスクブランク、反射型マスク、及び半導体装置の製造方法

Also Published As

Publication number Publication date
TW202225819A (zh) 2022-07-01
KR20230058395A (ko) 2023-05-03
US20230185181A1 (en) 2023-06-15
JPWO2022050156A1 (https=) 2022-03-10
WO2022050156A1 (ja) 2022-03-10

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