JPWO2023190696A1 - - Google Patents

Info

Publication number
JPWO2023190696A1
JPWO2023190696A1 JP2024512685A JP2024512685A JPWO2023190696A1 JP WO2023190696 A1 JPWO2023190696 A1 JP WO2023190696A1 JP 2024512685 A JP2024512685 A JP 2024512685A JP 2024512685 A JP2024512685 A JP 2024512685A JP WO2023190696 A1 JPWO2023190696 A1 JP WO2023190696A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2024512685A
Other languages
Japanese (ja)
Other versions
JPWO2023190696A5 (https=
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2023190696A1 publication Critical patent/JPWO2023190696A1/ja
Publication of JPWO2023190696A5 publication Critical patent/JPWO2023190696A5/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G03F1/58—Absorbers, e.g. of opaque materials having two or more different absorber layers, e.g. stacked multilayer absorbers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2024512685A 2022-03-29 2023-03-29 Pending JPWO2023190696A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2022054284 2022-03-29
PCT/JP2023/012835 WO2023190696A1 (ja) 2022-03-29 2023-03-29 反射型フォトマスクブランク及び反射型フォトマスク

Publications (2)

Publication Number Publication Date
JPWO2023190696A1 true JPWO2023190696A1 (https=) 2023-10-05
JPWO2023190696A5 JPWO2023190696A5 (https=) 2024-10-02

Family

ID=88202079

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024512685A Pending JPWO2023190696A1 (https=) 2022-03-29 2023-03-29

Country Status (7)

Country Link
US (1) US20250199393A1 (https=)
EP (1) EP4502727A4 (https=)
JP (1) JPWO2023190696A1 (https=)
KR (1) KR20240146079A (https=)
CN (1) CN118922779A (https=)
TW (1) TW202347008A (https=)
WO (1) WO2023190696A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4553575A1 (en) * 2023-11-10 2025-05-14 Imec VZW Extreme ultraviolet lithography mask
WO2025115438A1 (ja) * 2023-11-27 2025-06-05 Ａｇｃ株式会社 反射型マスクブランク、反射型マスク、反射型マスクの製造方法

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016072438A (ja) * 2014-09-30 2016-05-09 Hoya株式会社 反射型マスクブランク、反射型マスク及びその製造方法、並びに半導体装置の製造方法
WO2017169658A1 (ja) * 2016-03-28 2017-10-05 Hoya株式会社 反射型マスクブランク、反射型マスク及び半導体装置の製造方法
WO2019225737A1 (ja) * 2018-05-25 2019-11-28 Hoya株式会社 反射型マスクブランク、反射型マスク、並びに反射型マスク及び半導体装置の製造方法
WO2020100632A1 (ja) * 2018-11-15 2020-05-22 凸版印刷株式会社 反射型フォトマスクブランク及び反射型フォトマスク
JP2020106639A (ja) * 2018-12-27 2020-07-09 Hoya株式会社 反射型マスクブランク、反射型マスク、及び半導体装置の製造方法
JP2020149049A (ja) * 2019-03-07 2020-09-17 Hoya株式会社 マスクブランク、転写用マスクの製造方法、及び半導体デバイスの製造方法
WO2021132111A1 (ja) * 2019-12-27 2021-07-01 Ａｇｃ株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク、ｅｕｖリソグラフィ用反射型マスク、およびそれらの製造方法
JP6929983B1 (ja) * 2020-03-10 2021-09-01 Hoya株式会社 反射型マスクブランクおよび反射型マスク、並びに半導体デバイスの製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH037360Y2 (https=) 1985-11-18 1991-02-22
US8962220B2 (en) * 2009-04-02 2015-02-24 Toppan Printing Co., Ltd. Reflective photomask and reflective photomask blank
WO2018159785A1 (ja) 2017-03-02 2018-09-07 Hoya株式会社 反射型マスクブランク、反射型マスク及びその製造方法、並びに半導体装置の製造方法

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016072438A (ja) * 2014-09-30 2016-05-09 Hoya株式会社 反射型マスクブランク、反射型マスク及びその製造方法、並びに半導体装置の製造方法
WO2017169658A1 (ja) * 2016-03-28 2017-10-05 Hoya株式会社 反射型マスクブランク、反射型マスク及び半導体装置の製造方法
WO2019225737A1 (ja) * 2018-05-25 2019-11-28 Hoya株式会社 反射型マスクブランク、反射型マスク、並びに反射型マスク及び半導体装置の製造方法
WO2020100632A1 (ja) * 2018-11-15 2020-05-22 凸版印刷株式会社 反射型フォトマスクブランク及び反射型フォトマスク
JP2020106639A (ja) * 2018-12-27 2020-07-09 Hoya株式会社 反射型マスクブランク、反射型マスク、及び半導体装置の製造方法
JP2020149049A (ja) * 2019-03-07 2020-09-17 Hoya株式会社 マスクブランク、転写用マスクの製造方法、及び半導体デバイスの製造方法
WO2021132111A1 (ja) * 2019-12-27 2021-07-01 Ａｇｃ株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク、ｅｕｖリソグラフィ用反射型マスク、およびそれらの製造方法
JP6929983B1 (ja) * 2020-03-10 2021-09-01 Hoya株式会社 反射型マスクブランクおよび反射型マスク、並びに半導体デバイスの製造方法

Also Published As

Publication number Publication date
US20250199393A1 (en) 2025-06-19
KR20240146079A (ko) 2024-10-07
EP4502727A4 (en) 2026-04-29
CN118922779A (zh) 2024-11-08
EP4502727A1 (en) 2025-02-05
WO2023190696A1 (ja) 2023-10-05
TW202347008A (zh) 2023-12-01

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