KR20240146079A - 반사형 포토마스크 블랭크 및 반사형 포토마스크 - Google Patents

반사형 포토마스크 블랭크 및 반사형 포토마스크 Download PDF

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Publication number
KR20240146079A
KR20240146079A KR1020247031334A KR20247031334A KR20240146079A KR 20240146079 A KR20240146079 A KR 20240146079A KR 1020247031334 A KR1020247031334 A KR 1020247031334A KR 20247031334 A KR20247031334 A KR 20247031334A KR 20240146079 A KR20240146079 A KR 20240146079A
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KR
South Korea
Prior art keywords
layer
absorption
control film
film
reflective photomask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
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KR1020247031334A
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English (en)
Korean (ko)
Inventor
유토 야마가타
다이스케 미야와키
가즈노리 세키
히데아키 나카노
Original Assignee
가부시키가이샤 토판 포토마스크
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 가부시키가이샤 토판 포토마스크 filed Critical 가부시키가이샤 토판 포토마스크
Publication of KR20240146079A publication Critical patent/KR20240146079A/ko
Pending legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G03F1/58—Absorbers, e.g. of opaque materials having two or more different absorber layers, e.g. stacked multilayer absorbers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020247031334A 2022-03-29 2023-03-29 반사형 포토마스크 블랭크 및 반사형 포토마스크 Pending KR20240146079A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2022-054284 2022-03-29
JP2022054284 2022-03-29
PCT/JP2023/012835 WO2023190696A1 (ja) 2022-03-29 2023-03-29 反射型フォトマスクブランク及び反射型フォトマスク

Publications (1)

Publication Number Publication Date
KR20240146079A true KR20240146079A (ko) 2024-10-07

Family

ID=88202079

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020247031334A Pending KR20240146079A (ko) 2022-03-29 2023-03-29 반사형 포토마스크 블랭크 및 반사형 포토마스크

Country Status (7)

Country Link
US (1) US20250199393A1 (https=)
EP (1) EP4502727A4 (https=)
JP (1) JPWO2023190696A1 (https=)
KR (1) KR20240146079A (https=)
CN (1) CN118922779A (https=)
TW (1) TW202347008A (https=)
WO (1) WO2023190696A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4553575A1 (en) * 2023-11-10 2025-05-14 Imec VZW Extreme ultraviolet lithography mask
WO2025115438A1 (ja) * 2023-11-27 2025-06-05 Ａｇｃ株式会社 反射型マスクブランク、反射型マスク、反射型マスクの製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6287099U (https=) 1985-11-18 1987-06-03
WO2018159785A1 (ja) 2017-03-02 2018-09-07 Hoya株式会社 反射型マスクブランク、反射型マスク及びその製造方法、並びに半導体装置の製造方法
WO2019225737A1 (ja) 2018-05-25 2019-11-28 Hoya株式会社 反射型マスクブランク、反射型マスク、並びに反射型マスク及び半導体装置の製造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8962220B2 (en) * 2009-04-02 2015-02-24 Toppan Printing Co., Ltd. Reflective photomask and reflective photomask blank
JP6441012B2 (ja) * 2014-09-30 2018-12-19 Hoya株式会社 反射型マスクブランク、反射型マスク及びその製造方法、並びに半導体装置の製造方法
JP6739960B2 (ja) * 2016-03-28 2020-08-12 Hoya株式会社 反射型マスクブランク、反射型マスク及び半導体装置の製造方法
EP3882698A4 (en) * 2018-11-15 2022-08-17 Toppan Printing Co., Ltd. BLANK REFLECTIVE PHOTOMASK AND REFLECTIVE PHOTOMASK
JP7250511B2 (ja) * 2018-12-27 2023-04-03 Hoya株式会社 反射型マスクブランク、反射型マスク、及び半導体装置の製造方法
WO2020179463A1 (ja) * 2019-03-07 2020-09-10 Hoya株式会社 マスクブランク、転写用マスクの製造方法、及び半導体デバイスの製造方法
WO2021132111A1 (ja) * 2019-12-27 2021-07-01 Ａｇｃ株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク、ｅｕｖリソグラフィ用反射型マスク、およびそれらの製造方法
JP6929983B1 (ja) * 2020-03-10 2021-09-01 Hoya株式会社 反射型マスクブランクおよび反射型マスク、並びに半導体デバイスの製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6287099U (https=) 1985-11-18 1987-06-03
WO2018159785A1 (ja) 2017-03-02 2018-09-07 Hoya株式会社 反射型マスクブランク、反射型マスク及びその製造方法、並びに半導体装置の製造方法
WO2019225737A1 (ja) 2018-05-25 2019-11-28 Hoya株式会社 反射型マスクブランク、反射型マスク、並びに反射型マスク及び半導体装置の製造方法

Also Published As

Publication number Publication date
JPWO2023190696A1 (https=) 2023-10-05
US20250199393A1 (en) 2025-06-19
EP4502727A4 (en) 2026-04-29
CN118922779A (zh) 2024-11-08
EP4502727A1 (en) 2025-02-05
WO2023190696A1 (ja) 2023-10-05
TW202347008A (zh) 2023-12-01

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