TW202347008A - 反射型空白光罩及反射型光罩 - Google Patents

反射型空白光罩及反射型光罩 Download PDF

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Publication number
TW202347008A
TW202347008A TW112112012A TW112112012A TW202347008A TW 202347008 A TW202347008 A TW 202347008A TW 112112012 A TW112112012 A TW 112112012A TW 112112012 A TW112112012 A TW 112112012A TW 202347008 A TW202347008 A TW 202347008A
Authority
TW
Taiwan
Prior art keywords
absorption
layer
reflective
control film
film
Prior art date
Application number
TW112112012A
Other languages
English (en)
Chinese (zh)
Inventor
山形悠斗
宮脇大輔
關和範
中野秀亮
Original Assignee
日商凸版光掩模有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商凸版光掩模有限公司 filed Critical 日商凸版光掩模有限公司
Publication of TW202347008A publication Critical patent/TW202347008A/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G03F1/58—Absorbers, e.g. of opaque materials having two or more different absorber layers, e.g. stacked multilayer absorbers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW112112012A 2022-03-29 2023-03-29 反射型空白光罩及反射型光罩 TW202347008A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2022-054284 2022-03-29
JP2022054284 2022-03-29

Publications (1)

Publication Number Publication Date
TW202347008A true TW202347008A (zh) 2023-12-01

Family

ID=88202079

Family Applications (1)

Application Number Title Priority Date Filing Date
TW112112012A TW202347008A (zh) 2022-03-29 2023-03-29 反射型空白光罩及反射型光罩

Country Status (7)

Country Link
US (1) US20250199393A1 (https=)
EP (1) EP4502727A4 (https=)
JP (1) JPWO2023190696A1 (https=)
KR (1) KR20240146079A (https=)
CN (1) CN118922779A (https=)
TW (1) TW202347008A (https=)
WO (1) WO2023190696A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4553575A1 (en) * 2023-11-10 2025-05-14 Imec VZW Extreme ultraviolet lithography mask
WO2025115438A1 (ja) * 2023-11-27 2025-06-05 Ａｇｃ株式会社 反射型マスクブランク、反射型マスク、反射型マスクの製造方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH037360Y2 (https=) 1985-11-18 1991-02-22
US8962220B2 (en) * 2009-04-02 2015-02-24 Toppan Printing Co., Ltd. Reflective photomask and reflective photomask blank
JP6441012B2 (ja) * 2014-09-30 2018-12-19 Hoya株式会社 反射型マスクブランク、反射型マスク及びその製造方法、並びに半導体装置の製造方法
JP6739960B2 (ja) * 2016-03-28 2020-08-12 Hoya株式会社 反射型マスクブランク、反射型マスク及び半導体装置の製造方法
WO2018159785A1 (ja) 2017-03-02 2018-09-07 Hoya株式会社 反射型マスクブランク、反射型マスク及びその製造方法、並びに半導体装置の製造方法
KR102906466B1 (ko) 2018-05-25 2026-01-02 호야 가부시키가이샤 반사형 마스크 블랭크, 반사형 마스크, 그리고 반사형 마스크 및 반도체 장치의 제조 방법
EP3882698A4 (en) * 2018-11-15 2022-08-17 Toppan Printing Co., Ltd. BLANK REFLECTIVE PHOTOMASK AND REFLECTIVE PHOTOMASK
JP7250511B2 (ja) * 2018-12-27 2023-04-03 Hoya株式会社 反射型マスクブランク、反射型マスク、及び半導体装置の製造方法
WO2020179463A1 (ja) * 2019-03-07 2020-09-10 Hoya株式会社 マスクブランク、転写用マスクの製造方法、及び半導体デバイスの製造方法
WO2021132111A1 (ja) * 2019-12-27 2021-07-01 Ａｇｃ株式会社 Ｅｕｖリソグラフィ用反射型マスクブランク、ｅｕｖリソグラフィ用反射型マスク、およびそれらの製造方法
JP6929983B1 (ja) * 2020-03-10 2021-09-01 Hoya株式会社 反射型マスクブランクおよび反射型マスク、並びに半導体デバイスの製造方法

Also Published As

Publication number Publication date
JPWO2023190696A1 (https=) 2023-10-05
US20250199393A1 (en) 2025-06-19
KR20240146079A (ko) 2024-10-07
EP4502727A4 (en) 2026-04-29
CN118922779A (zh) 2024-11-08
EP4502727A1 (en) 2025-02-05
WO2023190696A1 (ja) 2023-10-05

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