SG10201605470SA - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
SG10201605470SA
SG10201605470SA SG10201605470SA SG10201605470SA SG10201605470SA SG 10201605470S A SG10201605470S A SG 10201605470SA SG 10201605470S A SG10201605470S A SG 10201605470SA SG 10201605470S A SG10201605470S A SG 10201605470SA SG 10201605470S A SG10201605470S A SG 10201605470SA
Authority
SG
Singapore
Prior art keywords
semiconductor device
semiconductor
Prior art date
Application number
SG10201605470SA
Other languages
English (en)
Inventor
Jun Koyama
Shunpei Yamazaki
Original Assignee
Semiconductor Energy Lab Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Lab Co Ltd filed Critical Semiconductor Energy Lab Co Ltd
Publication of SG10201605470SA publication Critical patent/SG10201605470SA/en

Links

Classifications

    • GPHYSICS
    • G06COMPUTING OR CALCULATING; COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F1/00Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
    • G06F1/26Power supply means, e.g. regulation thereof
    • GPHYSICS
    • G06COMPUTING OR CALCULATING; COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F1/00Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
    • G06F1/26Power supply means, e.g. regulation thereof
    • G06F1/32Means for saving power
    • G06F1/3203Power management, i.e. event-based initiation of a power-saving mode
    • G06F1/3234Power saving characterised by the action undertaken
    • G06F1/3287Power saving characterised by the action undertaken by switching off individual functional units in the computer system
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G5/00Control arrangements or circuits for visual indicators common to cathode-ray tube indicators and other visual indicators
    • G09G5/003Details of a display terminal, the details relating to the control arrangement of the display terminal and to the interfaces thereto
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B12/00Dynamic random access memory [DRAM] devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B69/00Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B99/00Subject matter not provided for in other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01Manufacture or treatment
    • H10D84/02Manufacture or treatment characterised by using material-based technologies
    • H10D84/03Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/81Bodies
    • H10H20/822Materials of the light-emitting regions
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02DCLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
    • Y02D10/00Energy efficient computing, e.g. low power processors, power management or thermal management

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • Thin Film Transistor (AREA)
  • Power Sources (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Microcomputers (AREA)
  • Electronic Switches (AREA)
  • Logic Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
SG10201605470SA 2012-01-23 2013-01-16 Semiconductor device SG10201605470SA (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2012011124 2012-01-23
JP2012011120 2012-01-23
JP2012105538 2012-05-03

Publications (1)

Publication Number Publication Date
SG10201605470SA true SG10201605470SA (en) 2016-08-30

Family

ID=48798246

Family Applications (2)

Application Number Title Priority Date Filing Date
SG11201504940RA SG11201504940RA (en) 2012-01-23 2013-01-16 Semiconductor device
SG10201605470SA SG10201605470SA (en) 2012-01-23 2013-01-16 Semiconductor device

Family Applications Before (1)

Application Number Title Priority Date Filing Date
SG11201504940RA SG11201504940RA (en) 2012-01-23 2013-01-16 Semiconductor device

Country Status (6)

Country Link
US (3) US9804645B2 (enExample)
JP (6) JP6027898B2 (enExample)
KR (3) KR102147870B1 (enExample)
SG (2) SG11201504940RA (enExample)
TW (1) TWI573013B (enExample)
WO (1) WO2013111757A1 (enExample)

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