GB201216863D0 - Distributed semiconductor device - Google Patents

Distributed semiconductor device

Info

Publication number
GB201216863D0
GB201216863D0 GBGB1216863.9A GB201216863A GB201216863D0 GB 201216863 D0 GB201216863 D0 GB 201216863D0 GB 201216863 A GB201216863 A GB 201216863A GB 201216863 D0 GB201216863 D0 GB 201216863D0
Authority
GB
United Kingdom
Prior art keywords
semiconductor device
distributed semiconductor
distributed
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GBGB1216863.9A
Other versions
GB2506141A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rolls Royce PLC
Original Assignee
Rolls Royce PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rolls Royce PLC filed Critical Rolls Royce PLC
Priority to GB1216863.9A priority Critical patent/GB2506141A/en
Publication of GB201216863D0 publication Critical patent/GB201216863D0/en
Publication of GB2506141A publication Critical patent/GB2506141A/en
Withdrawn legal-status Critical Current

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Classifications

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    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
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    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H03K17/162—Modifications for eliminating interference voltages or currents in field-effect transistor switches without feedback from the output circuit to the control circuit
    • H03K17/163—Soft switching
    • H03K17/164—Soft switching using parallel switching arrangements
GB1216863.9A 2012-09-21 2012-09-21 Distributed power semiconductor device Withdrawn GB2506141A (en)

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JP2522678B2 (en) * 1987-10-05 1996-08-07 日本電信電話株式会社 CMOS integrated circuit device
EP0697728B1 (en) * 1994-08-02 1999-04-21 STMicroelectronics S.r.l. MOS-technology power device chip and package assembly
JP3152642B2 (en) * 1998-01-29 2001-04-03 三洋電機株式会社 Semiconductor integrated circuit device
US7394135B1 (en) * 2004-01-14 2008-07-01 Edward Herbert Dual source MOSFET for low inductance synchronous rectifier
US20090096027A1 (en) * 2007-10-10 2009-04-16 Franz Hirler Power Semiconductor Device
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