TWI573013B - 半導體裝置 - Google Patents

半導體裝置 Download PDF

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Publication number
TWI573013B
TWI573013B TW102102361A TW102102361A TWI573013B TW I573013 B TWI573013 B TW I573013B TW 102102361 A TW102102361 A TW 102102361A TW 102102361 A TW102102361 A TW 102102361A TW I573013 B TWI573013 B TW I573013B
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TW
Taiwan
Prior art keywords
cpu
power supply
memory
switch
signal
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TW102102361A
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English (en)
Chinese (zh)
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TW201346510A (zh
Inventor
小山潤
山崎舜平
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半導體能源研究所股份有限公司
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Publication of TW201346510A publication Critical patent/TW201346510A/zh
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    • GPHYSICS
    • G06COMPUTING OR CALCULATING; COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F1/00Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
    • G06F1/26Power supply means, e.g. regulation thereof
    • GPHYSICS
    • G06COMPUTING OR CALCULATING; COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F1/00Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
    • G06F1/26Power supply means, e.g. regulation thereof
    • G06F1/32Means for saving power
    • G06F1/3203Power management, i.e. event-based initiation of a power-saving mode
    • G06F1/3234Power saving characterised by the action undertaken
    • G06F1/3287Power saving characterised by the action undertaken by switching off individual functional units in the computer system
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02DCLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
    • Y02D10/00Energy efficient computing, e.g. low power processors, power management or thermal management

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  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • Thin Film Transistor (AREA)
  • Power Sources (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Microcomputers (AREA)
  • Electronic Switches (AREA)
  • Logic Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Non-Volatile Memory (AREA)
TW102102361A 2012-01-23 2013-01-22 半導體裝置 TWI573013B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2012011120 2012-01-23
JP2012011124 2012-01-23
JP2012105538 2012-05-03

Publications (2)

Publication Number Publication Date
TW201346510A TW201346510A (zh) 2013-11-16
TWI573013B true TWI573013B (zh) 2017-03-01

Family

ID=48798246

Family Applications (1)

Application Number Title Priority Date Filing Date
TW102102361A TWI573013B (zh) 2012-01-23 2013-01-22 半導體裝置

Country Status (6)

Country Link
US (3) US9804645B2 (enExample)
JP (6) JP6027898B2 (enExample)
KR (3) KR102296696B1 (enExample)
SG (2) SG11201504940RA (enExample)
TW (1) TWI573013B (enExample)
WO (1) WO2013111757A1 (enExample)

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102541167A (zh) * 2010-12-23 2012-07-04 鸿富锦精密工业(深圳)有限公司 电子装置
JP5879165B2 (ja) * 2011-03-30 2016-03-08 株式会社半導体エネルギー研究所 半導体装置
TWI570730B (zh) 2011-05-20 2017-02-11 半導體能源研究所股份有限公司 半導體裝置
JP6046514B2 (ja) 2012-03-01 2016-12-14 株式会社半導体エネルギー研究所 半導体装置
US9030232B2 (en) 2012-04-13 2015-05-12 Semiconductor Energy Laboratory Co., Ltd. Isolator circuit and semiconductor device
KR102088865B1 (ko) 2012-09-03 2020-03-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 마이크로 컨트롤러
TWI482007B (zh) * 2012-09-27 2015-04-21 Wistron Corp 電腦系統、電源供應裝置及電源供應方法
KR102168987B1 (ko) 2012-10-17 2020-10-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 마이크로컨트롤러 및 그 제조 방법
JP6000863B2 (ja) * 2013-01-24 2016-10-05 株式会社半導体エネルギー研究所 半導体装置、及びその駆動方法
TWI619010B (zh) 2013-01-24 2018-03-21 半導體能源研究所股份有限公司 半導體裝置
JP6396671B2 (ja) 2013-04-26 2018-09-26 株式会社半導体エネルギー研究所 半導体装置
US8994430B2 (en) 2013-05-17 2015-03-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US11768689B2 (en) 2013-08-08 2023-09-26 Movidius Limited Apparatus, systems, and methods for low power computational imaging
US9910675B2 (en) 2013-08-08 2018-03-06 Linear Algebra Technologies Limited Apparatus, systems, and methods for low power computational imaging
WO2015121771A1 (en) 2014-02-14 2015-08-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
JP6495698B2 (ja) 2014-03-20 2019-04-03 株式会社半導体エネルギー研究所 半導体装置、電子部品、及び電子機器
US9515661B2 (en) 2014-05-09 2016-12-06 Semiconductor Energy Laboratory Co., Ltd. Circuit, semiconductor device, and clock tree
JP2016015475A (ja) * 2014-06-13 2016-01-28 株式会社半導体エネルギー研究所 半導体装置、及び電子機器
JP6695320B2 (ja) * 2014-07-30 2020-05-20 リニア アルジェブラ テクノロジーズ リミテッド 低電力コンピュータイメージング
JP6652342B2 (ja) * 2014-08-08 2020-02-19 株式会社半導体エネルギー研究所 半導体装置
US10204898B2 (en) 2014-08-08 2019-02-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
US9443564B2 (en) 2015-01-26 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, electronic component, and electronic device
US10553690B2 (en) 2015-08-04 2020-02-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP6365574B2 (ja) * 2016-03-23 2018-08-01 カシオ計算機株式会社 電子機器及び電子機器の電力供給制御方法
WO2017178923A1 (en) * 2016-04-15 2017-10-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, electronic component, and electronic device
CN109478883A (zh) 2016-07-19 2019-03-15 株式会社半导体能源研究所 半导体装置
US10120470B2 (en) 2016-07-22 2018-11-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device and electronic device
US10540944B2 (en) * 2016-09-29 2020-01-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising register
US10797706B2 (en) 2016-12-27 2020-10-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR102684558B1 (ko) * 2016-12-28 2024-07-15 에스케이하이닉스 주식회사 반도체 장치 및 반도체 시스템
CN110998863A (zh) 2017-07-31 2020-04-10 株式会社半导体能源研究所 半导体装置及半导体装置的制造方法
JP2019046199A (ja) * 2017-09-01 2019-03-22 株式会社半導体エネルギー研究所 プロセッサ、および電子機器
KR20190063879A (ko) * 2017-11-30 2019-06-10 에스케이하이닉스 주식회사 반도체 장치
JP7109973B2 (ja) * 2018-04-13 2022-08-01 株式会社半導体エネルギー研究所 半導体装置
JP7581209B2 (ja) 2019-08-08 2024-11-12 株式会社半導体エネルギー研究所 半導体装置
WO2021053453A1 (ja) 2019-09-20 2021-03-25 株式会社半導体エネルギー研究所 半導体装置
DE112020006360T5 (de) 2019-12-27 2022-10-27 Semiconductor Energy Laboratory Co., Ltd. Halbleitervorrichtung
US20220198022A1 (en) * 2020-12-23 2022-06-23 Intel Corporation Secure device power-up apparatus and method
JP7810444B2 (ja) * 2021-03-31 2026-02-03 国立大学法人東北大学 半導体回路装置
WO2023119039A1 (ja) * 2021-12-22 2023-06-29 株式会社半導体エネルギー研究所 半導体装置
JP2023152817A (ja) 2022-03-31 2023-10-17 株式会社半導体エネルギー研究所 半導体装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW288117B (en) * 1996-01-26 1996-10-11 Mitsubishi Electric Corp Semiconductor integrated circuit device
US20080239780A1 (en) * 2007-03-30 2008-10-02 Toshio Sasaki Semiconductor device
TWM394507U (en) * 2010-02-08 2010-12-11 Tech United Corp C Secondary side power source control switch

Family Cites Families (147)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5815805B2 (ja) 1981-09-14 1983-03-28 株式会社東芝 集積回路装置
JPS60198861A (ja) 1984-03-23 1985-10-08 Fujitsu Ltd 薄膜トランジスタ
JPH0244256B2 (ja) 1987-01-28 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn2o5deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPS63210023A (ja) 1987-02-24 1988-08-31 Natl Inst For Res In Inorg Mater InGaZn↓4O↓7で示される六方晶系の層状構造を有する化合物およびその製造法
JPH0244260B2 (ja) 1987-02-24 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn5o8deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH0244258B2 (ja) 1987-02-24 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn3o6deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH0244262B2 (ja) 1987-02-27 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn6o9deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH0244263B2 (ja) 1987-04-22 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn7o10deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH05251705A (ja) 1992-03-04 1993-09-28 Fuji Xerox Co Ltd 薄膜トランジスタ
US5583457A (en) 1992-04-14 1996-12-10 Hitachi, Ltd. Semiconductor integrated circuit device having power reduction mechanism
US5614847A (en) 1992-04-14 1997-03-25 Hitachi, Ltd. Semiconductor integrated circuit device having power reduction mechanism
JPH0786916A (ja) 1993-09-17 1995-03-31 Hitachi Ltd 半導体集積回路
JP3479375B2 (ja) 1995-03-27 2003-12-15 科学技術振興事業団 亜酸化銅等の金属酸化物半導体による薄膜トランジスタとpn接合を形成した金属酸化物半導体装置およびそれらの製造方法
JPH11505377A (ja) 1995-08-03 1999-05-18 フィリップス エレクトロニクス ネムローゼ フェンノートシャップ 半導体装置
JP3625598B2 (ja) 1995-12-30 2005-03-02 三星電子株式会社 液晶表示装置の製造方法
NO308149B1 (no) 1998-06-02 2000-07-31 Thin Film Electronics Asa Skalerbar, integrert databehandlingsinnretning
DE69937485T2 (de) 1998-01-28 2008-08-21 Thin Film Electronics Asa Methode zur herstellung zwei- oder dreidimensionaler elektrisch leitender oder halbleitender strukturen, eine löschmethode derselben und ein generator/modulator eines elektrischen feldes zum gebrauch in der herstellungsmethode
JP4170454B2 (ja) 1998-07-24 2008-10-22 Hoya株式会社 透明導電性酸化物薄膜を有する物品及びその製造方法
JP2000098443A (ja) 1998-09-17 2000-04-07 Olympus Optical Co Ltd 電子カメラ
JP2000150861A (ja) 1998-11-16 2000-05-30 Tdk Corp 酸化物薄膜
JP3276930B2 (ja) 1998-11-17 2002-04-22 科学技術振興事業団 トランジスタ及び半導体装置
WO2000038234A1 (en) 1998-12-04 2000-06-29 Thin Film Electronics Asa Scalable data processing apparatus
TW460731B (en) 1999-09-03 2001-10-21 Ind Tech Res Inst Electrode structure and production method of wide viewing angle LCD
JP3255159B2 (ja) * 1999-10-13 2002-02-12 株式会社日立製作所 半導体集積回路
JP4521676B2 (ja) 2000-06-16 2010-08-11 ルネサスエレクトロニクス株式会社 半導体集積回路装置
JP3878431B2 (ja) 2000-06-16 2007-02-07 株式会社ルネサステクノロジ 半導体集積回路装置
JP4089858B2 (ja) 2000-09-01 2008-05-28 国立大学法人東北大学 半導体デバイス
KR20020038482A (ko) 2000-11-15 2002-05-23 모리시타 요이찌 박막 트랜지스터 어레이, 그 제조방법 및 그것을 이용한표시패널
JP3997731B2 (ja) 2001-03-19 2007-10-24 富士ゼロックス株式会社 基材上に結晶性半導体薄膜を形成する方法
JP2002289859A (ja) 2001-03-23 2002-10-04 Minolta Co Ltd 薄膜トランジスタ
JP3925839B2 (ja) 2001-09-10 2007-06-06 シャープ株式会社 半導体記憶装置およびその試験方法
JP4090716B2 (ja) 2001-09-10 2008-05-28 雅司 川崎 薄膜トランジスタおよびマトリクス表示装置
JP2003132683A (ja) 2001-10-23 2003-05-09 Hitachi Ltd 半導体装置
EP1443130B1 (en) 2001-11-05 2011-09-28 Japan Science and Technology Agency Natural superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film
JP4164562B2 (ja) 2002-09-11 2008-10-15 独立行政法人科学技術振興機構 ホモロガス薄膜を活性層として用いる透明薄膜電界効果型トランジスタ
JP4083486B2 (ja) 2002-02-21 2008-04-30 独立行政法人科学技術振興機構 LnCuO(S,Se,Te)単結晶薄膜の製造方法
US7049190B2 (en) 2002-03-15 2006-05-23 Sanyo Electric Co., Ltd. Method for forming ZnO film, method for forming ZnO semiconductor layer, method for fabricating semiconductor device, and semiconductor device
JP3933591B2 (ja) 2002-03-26 2007-06-20 淳二 城戸 有機エレクトロルミネッセント素子
US6920574B2 (en) * 2002-04-29 2005-07-19 Apple Computer, Inc. Conserving power by reducing voltage supplied to an instruction-processing portion of a processor
US7339187B2 (en) 2002-05-21 2008-03-04 State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University Transistor structures
JP2004022625A (ja) 2002-06-13 2004-01-22 Murata Mfg Co Ltd 半導体デバイス及び該半導体デバイスの製造方法
US7105868B2 (en) 2002-06-24 2006-09-12 Cermet, Inc. High-electron mobility transistor with zinc oxide
US7067843B2 (en) 2002-10-11 2006-06-27 E. I. Du Pont De Nemours And Company Transparent oxide semiconductor thin film transistors
JP3567160B2 (ja) * 2003-01-30 2004-09-22 株式会社ルネサステクノロジ 半導体集積回路
JP4166105B2 (ja) 2003-03-06 2008-10-15 シャープ株式会社 半導体装置およびその製造方法
JP2004273732A (ja) 2003-03-07 2004-09-30 Sharp Corp アクティブマトリクス基板およびその製造方法
JP2005011166A (ja) 2003-06-20 2005-01-13 Renesas Technology Corp 情報処理装置
JP4108633B2 (ja) 2003-06-20 2008-06-25 シャープ株式会社 薄膜トランジスタおよびその製造方法ならびに電子デバイス
US7262463B2 (en) 2003-07-25 2007-08-28 Hewlett-Packard Development Company, L.P. Transistor including a deposited channel region having a doped portion
US7297977B2 (en) 2004-03-12 2007-11-20 Hewlett-Packard Development Company, L.P. Semiconductor device
US7145174B2 (en) 2004-03-12 2006-12-05 Hewlett-Packard Development Company, Lp. Semiconductor device
EP1737044B1 (en) 2004-03-12 2014-12-10 Japan Science and Technology Agency Amorphous oxide and thin film transistor
US7282782B2 (en) 2004-03-12 2007-10-16 Hewlett-Packard Development Company, L.P. Combined binary oxide semiconductor device
US7211825B2 (en) 2004-06-14 2007-05-01 Yi-Chi Shih Indium oxide-based thin film transistors and circuits
US7284137B2 (en) * 2004-06-29 2007-10-16 Intel Corporation System and method for managing power consumption within an integrated circuit
JP2006048190A (ja) 2004-08-02 2006-02-16 Seiko Epson Corp 情報処理装置および電力制御方法
JP2006100760A (ja) 2004-09-02 2006-04-13 Casio Comput Co Ltd 薄膜トランジスタおよびその製造方法
JP4553185B2 (ja) 2004-09-15 2010-09-29 ルネサスエレクトロニクス株式会社 半導体集積回路装置
US7285501B2 (en) 2004-09-17 2007-10-23 Hewlett-Packard Development Company, L.P. Method of forming a solution processed device
US7298084B2 (en) 2004-11-02 2007-11-20 3M Innovative Properties Company Methods and displays utilizing integrated zinc oxide row and column drivers in conjunction with organic light emitting diodes
EP1815530B1 (en) 2004-11-10 2021-02-17 Canon Kabushiki Kaisha Field effect transistor employing an amorphous oxide
US7829444B2 (en) 2004-11-10 2010-11-09 Canon Kabushiki Kaisha Field effect transistor manufacturing method
US7791072B2 (en) 2004-11-10 2010-09-07 Canon Kabushiki Kaisha Display
US7453065B2 (en) 2004-11-10 2008-11-18 Canon Kabushiki Kaisha Sensor and image pickup device
KR100998527B1 (ko) 2004-11-10 2010-12-07 고쿠리츠다이가쿠호진 토쿄고교 다이가꾸 비정질 산화물 및 전계 효과 트랜지스터
US7863611B2 (en) 2004-11-10 2011-01-04 Canon Kabushiki Kaisha Integrated circuits utilizing amorphous oxides
RU2358354C2 (ru) 2004-11-10 2009-06-10 Кэнон Кабусики Кайся Светоизлучающее устройство
JP4341542B2 (ja) 2004-12-15 2009-10-07 セイコーエプソン株式会社 情報処理装置および情報処理方法
US7579224B2 (en) 2005-01-21 2009-08-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a thin film semiconductor device
TWI505473B (zh) 2005-01-28 2015-10-21 半導體能源研究所股份有限公司 半導體裝置,電子裝置,和半導體裝置的製造方法
TWI481024B (zh) 2005-01-28 2015-04-11 半導體能源研究所股份有限公司 半導體裝置,電子裝置,和半導體裝置的製造方法
US7858451B2 (en) 2005-02-03 2010-12-28 Semiconductor Energy Laboratory Co., Ltd. Electronic device, semiconductor device and manufacturing method thereof
WO2006088167A2 (en) 2005-02-16 2006-08-24 Matsushita Electric Industrial Co., Ltd. Power supply control circuit and electronic circuit
US7948171B2 (en) 2005-02-18 2011-05-24 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US20060197092A1 (en) 2005-03-03 2006-09-07 Randy Hoffman System and method for forming conductive material on a substrate
US8681077B2 (en) 2005-03-18 2014-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, and display device, driving method and electronic apparatus thereof
US7544967B2 (en) 2005-03-28 2009-06-09 Massachusetts Institute Of Technology Low voltage flexible organic/transparent transistor for selective gas sensing, photodetecting and CMOS device applications
US7645478B2 (en) 2005-03-31 2010-01-12 3M Innovative Properties Company Methods of making displays
US8300031B2 (en) 2005-04-20 2012-10-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising transistor having gate and drain connected through a current-voltage conversion element
JP2006344849A (ja) 2005-06-10 2006-12-21 Casio Comput Co Ltd 薄膜トランジスタ
US7402506B2 (en) 2005-06-16 2008-07-22 Eastman Kodak Company Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
US7691666B2 (en) 2005-06-16 2010-04-06 Eastman Kodak Company Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
US7507618B2 (en) 2005-06-27 2009-03-24 3M Innovative Properties Company Method for making electronic devices using metal oxide nanoparticles
KR100711890B1 (ko) 2005-07-28 2007-04-25 삼성에스디아이 주식회사 유기 발광표시장치 및 그의 제조방법
JP2007059128A (ja) 2005-08-23 2007-03-08 Canon Inc 有機el表示装置およびその製造方法
JP2007073705A (ja) 2005-09-06 2007-03-22 Canon Inc 酸化物半導体チャネル薄膜トランジスタおよびその製造方法
JP5116225B2 (ja) 2005-09-06 2013-01-09 キヤノン株式会社 酸化物半導体デバイスの製造方法
JP4850457B2 (ja) 2005-09-06 2012-01-11 キヤノン株式会社 薄膜トランジスタ及び薄膜ダイオード
JP4280736B2 (ja) 2005-09-06 2009-06-17 キヤノン株式会社 半導体素子
EP1998373A3 (en) 2005-09-29 2012-10-31 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device having oxide semiconductor layer and manufacturing method thereof
JP5037808B2 (ja) 2005-10-20 2012-10-03 キヤノン株式会社 アモルファス酸化物を用いた電界効果型トランジスタ、及び該トランジスタを用いた表示装置
CN101577231B (zh) 2005-11-15 2013-01-02 株式会社半导体能源研究所 半导体器件及其制造方法
JP4303719B2 (ja) * 2005-12-08 2009-07-29 Necエレクトロニクス株式会社 半導体集積回路およびその制御方法
TWI292281B (en) 2005-12-29 2008-01-01 Ind Tech Res Inst Pixel structure of active organic light emitting diode and method of fabricating the same
US7867636B2 (en) 2006-01-11 2011-01-11 Murata Manufacturing Co., Ltd. Transparent conductive film and method for manufacturing the same
JP4977478B2 (ja) 2006-01-21 2012-07-18 三星電子株式会社 ZnOフィルム及びこれを用いたTFTの製造方法
US7576394B2 (en) 2006-02-02 2009-08-18 Kochi Industrial Promotion Center Thin film transistor including low resistance conductive thin films and manufacturing method thereof
US7977169B2 (en) 2006-02-15 2011-07-12 Kochi Industrial Promotion Center Semiconductor device including active layer made of zinc oxide with controlled orientations and manufacturing method thereof
JP4911988B2 (ja) 2006-02-24 2012-04-04 ルネサスエレクトロニクス株式会社 半導体装置
KR20070101595A (ko) 2006-04-11 2007-10-17 삼성전자주식회사 ZnO TFT
JP4839938B2 (ja) 2006-04-14 2011-12-21 セイコーエプソン株式会社 情報処理装置及び情報処理方法
US20070252928A1 (en) 2006-04-28 2007-11-01 Toppan Printing Co., Ltd. Structure, transmission type liquid crystal display, reflection type display and manufacturing method thereof
JP5028033B2 (ja) 2006-06-13 2012-09-19 キヤノン株式会社 酸化物半導体膜のドライエッチング方法
JP4999400B2 (ja) 2006-08-09 2012-08-15 キヤノン株式会社 酸化物半導体膜のドライエッチング方法
JP4609797B2 (ja) 2006-08-09 2011-01-12 Nec液晶テクノロジー株式会社 薄膜デバイス及びその製造方法
JP4332545B2 (ja) 2006-09-15 2009-09-16 キヤノン株式会社 電界効果型トランジスタ及びその製造方法
JP5164357B2 (ja) 2006-09-27 2013-03-21 キヤノン株式会社 半導体装置及び半導体装置の製造方法
JP4274219B2 (ja) 2006-09-27 2009-06-03 セイコーエプソン株式会社 電子デバイス、有機エレクトロルミネッセンス装置、有機薄膜半導体装置
US7622371B2 (en) 2006-10-10 2009-11-24 Hewlett-Packard Development Company, L.P. Fused nanocrystal thin film semiconductor and method
US7772021B2 (en) 2006-11-29 2010-08-10 Samsung Electronics Co., Ltd. Flat panel displays comprising a thin-film transistor having a semiconductive oxide in its channel and methods of fabricating the same for use in flat panel displays
JP2008140684A (ja) 2006-12-04 2008-06-19 Toppan Printing Co Ltd カラーelディスプレイおよびその製造方法
KR101303578B1 (ko) 2007-01-05 2013-09-09 삼성전자주식회사 박막 식각 방법
US8207063B2 (en) 2007-01-26 2012-06-26 Eastman Kodak Company Process for atomic layer deposition
JP4312238B2 (ja) 2007-02-13 2009-08-12 株式会社ソニー・コンピュータエンタテインメント 画像変換装置および画像変換方法
KR100851215B1 (ko) 2007-03-14 2008-08-07 삼성에스디아이 주식회사 박막 트랜지스터 및 이를 이용한 유기 전계 발광표시장치
US7795613B2 (en) 2007-04-17 2010-09-14 Toppan Printing Co., Ltd. Structure with transistor
KR101325053B1 (ko) 2007-04-18 2013-11-05 삼성디스플레이 주식회사 박막 트랜지스터 기판 및 이의 제조 방법
KR20080094300A (ko) 2007-04-19 2008-10-23 삼성전자주식회사 박막 트랜지스터 및 그 제조 방법과 박막 트랜지스터를포함하는 평판 디스플레이
KR101334181B1 (ko) 2007-04-20 2013-11-28 삼성전자주식회사 선택적으로 결정화된 채널층을 갖는 박막 트랜지스터 및 그제조 방법
WO2008133345A1 (en) 2007-04-25 2008-11-06 Canon Kabushiki Kaisha Oxynitride semiconductor
KR101345376B1 (ko) 2007-05-29 2013-12-24 삼성전자주식회사 ZnO 계 박막 트랜지스터 및 그 제조방법
US7868479B2 (en) 2007-06-27 2011-01-11 Qualcomm Incorporated Power gating for multimedia processing power management
JP2009015231A (ja) * 2007-07-09 2009-01-22 Fuji Xerox Co Ltd 画像形成装置および電源装置
JP4960813B2 (ja) 2007-09-14 2012-06-27 株式会社リコー 電力制御システム
JP2009085786A (ja) 2007-09-28 2009-04-23 Toyota Motor Corp 溶接ビード検査装置および溶接ビード検査方法
JP4535170B2 (ja) 2007-10-19 2010-09-01 株式会社デンソー マイクロコンピュータシステム
US8046615B2 (en) 2007-10-19 2011-10-25 Denso Corporation Microcomputer system with reduced power consumption
JP5104254B2 (ja) 2007-11-30 2012-12-19 富士通セミコンダクター株式会社 集積回路装置
US8202365B2 (en) 2007-12-17 2012-06-19 Fujifilm Corporation Process for producing oriented inorganic crystalline film, and semiconductor device using the oriented inorganic crystalline film
JP4623179B2 (ja) 2008-09-18 2011-02-02 ソニー株式会社 薄膜トランジスタおよびその製造方法
JP5451280B2 (ja) 2008-10-09 2014-03-26 キヤノン株式会社 ウルツ鉱型結晶成長用基板およびその製造方法ならびに半導体装置
JP5452041B2 (ja) 2009-03-13 2014-03-26 ローム株式会社 データ処理装置
JP2010282585A (ja) 2009-06-08 2010-12-16 Fujitsu Ltd 電力管理回路、電力管理方法及び電力管理プログラム
JP2010287950A (ja) * 2009-06-09 2010-12-24 Sanyo Electric Co Ltd 電子機器
JP2011043913A (ja) 2009-08-19 2011-03-03 Ricoh Co Ltd 画像形成装置、電源供給制御方法、プログラム及び記録媒体
CN102612741B (zh) 2009-11-06 2014-11-12 株式会社半导体能源研究所 半导体装置
JP2011120158A (ja) 2009-12-07 2011-06-16 Renesas Electronics Corp 半導体装置及び電源スイッチ回路
CN102656683B (zh) 2009-12-11 2015-02-11 株式会社半导体能源研究所 半导体装置
JP2011151150A (ja) * 2010-01-20 2011-08-04 Toshiba Corp 半導体集積回路
EP2526619B1 (en) * 2010-01-20 2016-03-23 Semiconductor Energy Laboratory Co. Ltd. Signal processing circuit and method for driving the same
MY187143A (en) 2010-01-20 2021-09-03 Semiconductor Energy Lab Semiconductor device
KR20120120330A (ko) 2010-01-29 2012-11-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
DK2372861T3 (da) * 2010-04-01 2013-03-25 Racktivity Nv Styringsenhed til datacenter med dynamisk belastningsudligning
US8692243B2 (en) 2010-04-20 2014-04-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8850236B2 (en) 2010-06-18 2014-09-30 Samsung Electronics Co., Ltd. Power gating of cores by an SoC
US8642416B2 (en) * 2010-07-30 2014-02-04 Monolithic 3D Inc. Method of forming three dimensional integrated circuit devices using layer transfer technique
US8415972B2 (en) * 2010-11-17 2013-04-09 Advanced Micro Devices, Inc. Variable-width power gating module

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW288117B (en) * 1996-01-26 1996-10-11 Mitsubishi Electric Corp Semiconductor integrated circuit device
US20080239780A1 (en) * 2007-03-30 2008-10-02 Toshio Sasaki Semiconductor device
TWM394507U (en) * 2010-02-08 2010-12-11 Tech United Corp C Secondary side power source control switch

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