TWI573013B - 半導體裝置 - Google Patents

半導體裝置 Download PDF

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Publication number
TWI573013B
TWI573013B TW102102361A TW102102361A TWI573013B TW I573013 B TWI573013 B TW I573013B TW 102102361 A TW102102361 A TW 102102361A TW 102102361 A TW102102361 A TW 102102361A TW I573013 B TWI573013 B TW I573013B
Authority
TW
Taiwan
Prior art keywords
cpu
power supply
memory
switch
signal
Prior art date
Application number
TW102102361A
Other languages
English (en)
Chinese (zh)
Other versions
TW201346510A (zh
Inventor
小山潤
山崎舜平
Original Assignee
半導體能源研究所股份有限公司
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Application filed by 半導體能源研究所股份有限公司 filed Critical 半導體能源研究所股份有限公司
Publication of TW201346510A publication Critical patent/TW201346510A/zh
Application granted granted Critical
Publication of TWI573013B publication Critical patent/TWI573013B/zh

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Classifications

    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F1/00—Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
    • G06F1/26—Power supply means, e.g. regulation thereof
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F1/00—Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
    • G06F1/26—Power supply means, e.g. regulation thereof
    • G06F1/32—Means for saving power
    • G06F1/3203—Power management, i.e. event-based initiation of a power-saving mode
    • G06F1/3234—Power saving characterised by the action undertaken
    • G06F1/3287—Power saving characterised by the action undertaken by switching off individual functional units in the computer system
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G5/00—Control arrangements or circuits for visual indicators common to cathode-ray tube indicators and other visual indicators
    • G09G5/003—Details of a display terminal, the details relating to the control arrangement of the display terminal and to the interfaces thereto
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
    • Y02D10/00—Energy efficient computing, e.g. low power processors, power management or thermal management

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • Thin Film Transistor (AREA)
  • Power Sources (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Microcomputers (AREA)
  • Electronic Switches (AREA)
  • Logic Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
TW102102361A 2012-01-23 2013-01-22 半導體裝置 TWI573013B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2012011120 2012-01-23
JP2012011124 2012-01-23
JP2012105538 2012-05-03

Publications (2)

Publication Number Publication Date
TW201346510A TW201346510A (zh) 2013-11-16
TWI573013B true TWI573013B (zh) 2017-03-01

Family

ID=48798246

Family Applications (1)

Application Number Title Priority Date Filing Date
TW102102361A TWI573013B (zh) 2012-01-23 2013-01-22 半導體裝置

Country Status (6)

Country Link
US (3) US9804645B2 (enExample)
JP (6) JP6027898B2 (enExample)
KR (3) KR102147870B1 (enExample)
SG (2) SG10201605470SA (enExample)
TW (1) TWI573013B (enExample)
WO (1) WO2013111757A1 (enExample)

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JP5879165B2 (ja) * 2011-03-30 2016-03-08 株式会社半導体エネルギー研究所 半導体装置
TWI570730B (zh) 2011-05-20 2017-02-11 半導體能源研究所股份有限公司 半導體裝置
JP6046514B2 (ja) 2012-03-01 2016-12-14 株式会社半導体エネルギー研究所 半導体装置
US9030232B2 (en) 2012-04-13 2015-05-12 Semiconductor Energy Laboratory Co., Ltd. Isolator circuit and semiconductor device
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JP6000863B2 (ja) * 2013-01-24 2016-10-05 株式会社半導体エネルギー研究所 半導体装置、及びその駆動方法
JP6396671B2 (ja) 2013-04-26 2018-09-26 株式会社半導体エネルギー研究所 半導体装置
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JP6695320B2 (ja) * 2014-07-30 2020-05-20 リニア アルジェブラ テクノロジーズ リミテッド 低電力コンピュータイメージング
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JP6652342B2 (ja) * 2014-08-08 2020-02-19 株式会社半導体エネルギー研究所 半導体装置
US9443564B2 (en) 2015-01-26 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, electronic component, and electronic device
US10553690B2 (en) 2015-08-04 2020-02-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
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WO2017178923A1 (en) * 2016-04-15 2017-10-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, electronic component, and electronic device
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US10120470B2 (en) 2016-07-22 2018-11-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device and electronic device
US10540944B2 (en) * 2016-09-29 2020-01-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising register
US10797706B2 (en) 2016-12-27 2020-10-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR102684558B1 (ko) * 2016-12-28 2024-07-15 에스케이하이닉스 주식회사 반도체 장치 및 반도체 시스템
WO2019025893A1 (ja) 2017-07-31 2019-02-07 株式会社半導体エネルギー研究所 半導体装置、および半導体装置の作製方法
JP2019046199A (ja) * 2017-09-01 2019-03-22 株式会社半導体エネルギー研究所 プロセッサ、および電子機器
KR20190063879A (ko) * 2017-11-30 2019-06-10 에스케이하이닉스 주식회사 반도체 장치
JP7109973B2 (ja) * 2018-04-13 2022-08-01 株式会社半導体エネルギー研究所 半導体装置
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DE112020004469T5 (de) 2019-09-20 2022-08-04 Semiconductor Energy Laboratory Co., Ltd. Halbleitervorrichtung
CN114902414A (zh) 2019-12-27 2022-08-12 株式会社半导体能源研究所 半导体装置
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WO2022211098A1 (ja) * 2021-03-31 2022-10-06 国立大学法人東北大学 半導体回路装置
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JP2023152817A (ja) 2022-03-31 2023-10-17 株式会社半導体エネルギー研究所 半導体装置

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