KR102147870B1 - 반도체 장치 - Google Patents

반도체 장치 Download PDF

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Publication number
KR102147870B1
KR102147870B1 KR1020147023583A KR20147023583A KR102147870B1 KR 102147870 B1 KR102147870 B1 KR 102147870B1 KR 1020147023583 A KR1020147023583 A KR 1020147023583A KR 20147023583 A KR20147023583 A KR 20147023583A KR 102147870 B1 KR102147870 B1 KR 102147870B1
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KR
South Korea
Prior art keywords
cpu
power supply
memory
signal
switch
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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KR1020147023583A
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English (en)
Korean (ko)
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KR20140124795A (ko
Inventor
준 고야마
슌페이 야마자키
šœ페이 야마자키
Original Assignee
가부시키가이샤 한도오따이 에네루기 켄큐쇼
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Priority to KR1020207023896A priority Critical patent/KR102296696B1/ko
Publication of KR20140124795A publication Critical patent/KR20140124795A/ko
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Publication of KR102147870B1 publication Critical patent/KR102147870B1/ko
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    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F1/00—Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
    • G06F1/26—Power supply means, e.g. regulation thereof
    • G06F1/32—Means for saving power
    • G06F1/3203—Power management, i.e. event-based initiation of a power-saving mode
    • G06F1/3234—Power saving characterised by the action undertaken
    • G06F1/3287—Power saving characterised by the action undertaken by switching off individual functional units in the computer system
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F1/00—Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
    • G06F1/26—Power supply means, e.g. regulation thereof
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G5/00—Control arrangements or circuits for visual indicators common to cathode-ray tube indicators and other visual indicators
    • G09G5/003—Details of a display terminal, the details relating to the control arrangement of the display terminal and to the interfaces thereto
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
    • Y02D10/00—Energy efficient computing, e.g. low power processors, power management or thermal management

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  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • Thin Film Transistor (AREA)
  • Power Sources (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Microcomputers (AREA)
  • Electronic Switches (AREA)
  • Logic Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
KR1020147023583A 2012-01-23 2013-01-16 반도체 장치 Expired - Fee Related KR102147870B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020207023896A KR102296696B1 (ko) 2012-01-23 2013-01-16 반도체 장치

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
JP2012011124 2012-01-23
JP2012011120 2012-01-23
JPJP-P-2012-011120 2012-01-23
JPJP-P-2012-011124 2012-01-23
JP2012105538 2012-05-03
JPJP-P-2012-105538 2012-05-03
PCT/JP2013/051230 WO2013111757A1 (en) 2012-01-23 2013-01-16 Semiconductor device

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020207023896A Division KR102296696B1 (ko) 2012-01-23 2013-01-16 반도체 장치

Publications (2)

Publication Number Publication Date
KR20140124795A KR20140124795A (ko) 2014-10-27
KR102147870B1 true KR102147870B1 (ko) 2020-08-25

Family

ID=48798246

Family Applications (3)

Application Number Title Priority Date Filing Date
KR1020207023896A Active KR102296696B1 (ko) 2012-01-23 2013-01-16 반도체 장치
KR1020147023583A Expired - Fee Related KR102147870B1 (ko) 2012-01-23 2013-01-16 반도체 장치
KR1020217027314A Active KR102433736B1 (ko) 2012-01-23 2013-01-16 반도체 장치

Family Applications Before (1)

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KR1020207023896A Active KR102296696B1 (ko) 2012-01-23 2013-01-16 반도체 장치

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020217027314A Active KR102433736B1 (ko) 2012-01-23 2013-01-16 반도체 장치

Country Status (6)

Country Link
US (3) US9804645B2 (enExample)
JP (6) JP6027898B2 (enExample)
KR (3) KR102296696B1 (enExample)
SG (2) SG11201504940RA (enExample)
TW (1) TWI573013B (enExample)
WO (1) WO2013111757A1 (enExample)

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JP6046514B2 (ja) 2012-03-01 2016-12-14 株式会社半導体エネルギー研究所 半導体装置
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JP6396671B2 (ja) 2013-04-26 2018-09-26 株式会社半導体エネルギー研究所 半導体装置
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CN109074296B (zh) * 2016-04-15 2023-09-12 株式会社半导体能源研究所 半导体装置、电子构件及电子设备
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KR102684558B1 (ko) * 2016-12-28 2024-07-15 에스케이하이닉스 주식회사 반도체 장치 및 반도체 시스템
KR20200033868A (ko) 2017-07-31 2020-03-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
JP2019046199A (ja) * 2017-09-01 2019-03-22 株式会社半導体エネルギー研究所 プロセッサ、および電子機器
KR20190063879A (ko) * 2017-11-30 2019-06-10 에스케이하이닉스 주식회사 반도체 장치
JP7109973B2 (ja) * 2018-04-13 2022-08-01 株式会社半導体エネルギー研究所 半導体装置
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JPWO2022211098A1 (enExample) * 2021-03-31 2022-10-06
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