KR970706713A - 반도체 칩용 컴플리언트 인터페이스(compliant interface for a semiconductor chip) - Google Patents

반도체 칩용 컴플리언트 인터페이스(compliant interface for a semiconductor chip)

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Publication number
KR970706713A
KR970706713A KR1019970701682A KR19970701682A KR970706713A KR 970706713 A KR970706713 A KR 970706713A KR 1019970701682 A KR1019970701682 A KR 1019970701682A KR 19970701682 A KR19970701682 A KR 19970701682A KR 970706713 A KR970706713 A KR 970706713A
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KR
South Korea
Prior art keywords
support structure
liquid
compliant
contact
chip
Prior art date
Application number
KR1019970701682A
Other languages
English (en)
Other versions
KR100384255B1 (ko
Inventor
코박 즈래타
디스테파노 토마스
미첼 크레익
Original Assignee
디스테파노 토마스
테세라, 인코오포레이티드
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Application filed by 디스테파노 토마스, 테세라, 인코오포레이티드 filed Critical 디스테파노 토마스
Publication of KR970706713A publication Critical patent/KR970706713A/ko
Application granted granted Critical
Publication of KR100384255B1 publication Critical patent/KR100384255B1/ko

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    • Y10T29/4913—Assembling to base an electrical component, e.g., capacitor, etc.
    • Y10T29/49144—Assembling to base an electrical component, e.g., capacitor, etc. by metal fusion
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49174—Assembling terminal to elongated conductor

Abstract

본 발명은 반도체 칩과 그 지지 기판 사이의 열팽창 계수의 불일치를 조절하도록 반도체 칩(120)과 그 지지기판 사이에 평면 컴플리언트 인터페이스를 제공하는 방법 및 장치에 관한 것이다. 상기 컴플리언트 인터페이스는 인접 패드들 사이의 채널(117)을 한정하는 복수의 컴플리언트 패드(110)으로 구성된다. 상기 패드들은 가요성 막 칩 캐리어(100)와 상기 칩 사이에서 일반적으로 압축된다. 컴플리언트 충전자(170)는 제어된 두께를 갖는 균일한 캡슐 봉입층을 형성하도록 상기 채널내에 추가로 배치된다.

Description

반도체 칩용 컴플리언트 인터페이스(COMPLIANT INTERFACE FOR A SEMICONDUCTOR CHIP)
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2도는 컴플리언트 패 사이에 채널이 본 발명에 따른 경화성 액체로 채워져 있는 제1도에 도시되어 있는 실시예의 측면도이다, 제3A도 및 제3B도는 본 발명의 추가의 실시예에 따르는 컴플리언트 패드를 형성하는데 사용되는 마스크와 탄성 중합체의 측면도이다.

Claims (41)

  1. 제1표면과 제1지지 구조의 제1표면상에 다공성 탄성층을 갖는 제1지지 구조(100)를 제공하는 단계와; 상기 다공성층을 향하여 제2지지 구조(120)의 제1표면을 접촉시키는 단계를 포함하는 반도체 칩용 컴플리언트 인터페이스를 제조하는 방법에 있어서; 상기 접촉 단계 후에 상기 다공성층내에 제1경화성 액체(170)를 배치하는 단계를 포함하는 것을 특징으로 하는 컴플리언트 인터페이스 제조 방법.
  2. 제1항에 있어서, 상기 제1액체는 경화성 탄성 중합체 또는 경화성 젤 캡슐 봉입물인 것을 특징으로 하는 컴플리언트 인터페이스 제조 방법.
  3. 제1항에 있어서, 상기 배치 단계 전에 배출 환경을 제공하는 단계를 추가로 포함하는 것을 특징으로 하는 컴플리언트 인터페이스 제조 방법.
  4. 제1항에 있어서, 상기 다공성 탄성층은 자체의 사이에 채널들을 한정하는 복수의 컴플리언트 패드(110)를 포함하고, 상기 제1경화성 액체는 상기 채널들 사이에 배치되는 것을 특징으로 하는 컴플리언트 인터페이스 제조 방법.
  5. 제4항에 있어서, 상기 제1액체가 상기 채널들 사이에 도입된 후에 상기 제1액체를 적어도 부분적으로 경화시키는 단계를 추가로 포함하고, 그것에 의해 컴플리언트 층이 상기 지지 구조들 사이에 형성되는 것을 특징으로 하는 컴플리언트 인터페이스 제조 방법.
  6. 제5항에 있어서, 상기 배치 단계 전에 상기 제1 및 제2지지 구조(100,120) 사이의 상기 컴플리언트 패드(110)를 압축하는 단계를 추가로 포함하는 것을 특징으로 하는 컴플리언트 인터페이스 제조 방법.
  7. 제6항에 있어서, 상기 압축 단계는 한 쌍의 대향 플래튼(107,127) 사이의 제1 및 제2지지 구조를 결합하고, 상기 플래튼들을 함께 작동시키는 단계를 포함하는 것을 특징으로 하는 컴플리언트 인터페이스 제조 방법.
  8. 제7항에 있어서, 상기 제1지지 구조는 상기 제2지지 구조로부터 이격된 제2표면상에 복수의 단자(140)를 가지고, 상기 플래튼 중 하나(107)는 상기 배치 단계 전에 상기 단자들을 서로 실질적으로 동일 평면상에 배열되게 하기 위해 상기 단자들(140)상에 지탱되는 것을 특징으로 하는 컴플리언트 인터페이스 제조 방법.
  9. 제8항에 있어서, 상기 압축 단계는 상기 패드가 상기 실질적으로 동일 평면상의 배열에 상기 단자들을 유지하기 쉽게 하기 위해 상기 컴플리언트 패드를 세팅하는 단계를 포함하는 것을 특징으로 하는 컴플리언트 인터페이스 제조 방법.
  10. 제9항에 있어서, 상기 제1지지 구조는 가요성 유정체 시트인 것을 특징으로 하는 컴플리언트 인터페이스 제조 방법.
  11. 제1항에 있어서, 상기 제1지지 구조를 제공하는 단계는 : 상기 지지 구조(100)의 상기 제1표면의 최상부에 자체를 통하는 복수의 홀을 갖는 마스크 (80)를 제공하는 단계와; 제2경화성 액체로 상기 마스크내의 홀들을 충전하는 단계와; 상기 마스크를 제거하는 단계와; 상기 제2액체를 적어도 부분적으로 경화시키는 단계를 포함하며, 그것에 의해 상기 컴플리언트 패드(110)가 생성되는 것을 특징으로 하는 컴플리언트 인터페이스 제조 방법.
  12. 제11항에 있어서, 상기 제2액체를 경화시키는 단계는 상기 제2액체를 100° 내지 180℃ 사이에서 가열하는 단계를 포함하는 것을 특징으로 하는 컴플리언트 인터페이스 제조 방법.
  13. 제11항에 있어서, 상기 제2액체를 경화시키는 단계는 상기 제2액체를 자외선 광에 노출시키는 단계를 포함하는 것을 특징으로 하는 컴플리언트 인터페이스 제조 방법.
  14. 제11항에 있어서, 상기 제2액체를 경화시키는 단계는 자외선 광 및 가열을 결합 사용하여 상기 제2액체를 적어도 부분적으로 경화시키는 단계를 포함하는 것을 특징으로 하는 컴플리언트 인터페이스 제조 방법.
  15. 제11항에 있어서, 상기 충전 단계는 상기 제2액체가 상기 마스크내의 홀을 충전시키기 위해 상기 마스크의 노출 표면 전반에 상기 제2액체를 도포하는 단계를 포함하고, 상기 마스크(85)내의 홀(95)은 노출 표면에서 작은 직경을 가지고 상기 유전체 시트의 제1표면에 인접한 표면에서 큰 직경을 가지는 것을 특징으로 하는 컴플리언트 인터페이스 제조 방법.
  16. 제10항에 있어서, 상기 제2지지 구조(120)는 자체의 제1표면상에 복수의 접촉부(130)를 갖는 반도체 칩인 것을 특징으로 하는 컴플리언트 인터페이스 제조 방법.
  17. 제16항에 있어서, 상기 배치 단계 전에 하나의 단자(140)에 각 접촉부(130)를 전기 접속시키는 단계를 추가로 포함하는 것을 특징으로 하는 컴플리언트 인터페이스 제조 방법.
  18. 제17항에 있어서, 상기 접촉 단계는 컴플리언트 패드가 접촉부를 덮지 않게 하기 위해 상기 칩을 배열하는 단계를 추가로 포함하는 것을 특징으로 하는 컴플리언트 인터페이스 제조 방법.
  19. 제18항에 있어서, 임의의 부분적으로 경화된 패드를 더 완전하게 경화되게하고 상기 칩에 고착시키는 컴플리언트 패드를 향해 상기 칩을 압축하기 전에 상기 칩을 가열하는 단계를 추가로 포함하는 것을 특징으로 하는 컴플리언트 인터페이스 제조 방법.
  20. 제10항에 있어서, 상기 제2지지 구조는 제1측면상에 톱니모양을 갖는 열 스프레더(520)를 포함하고, 상기 방법은 상기 접촉부가 상기 제1지지 구조(540)의 제1표면을 향해 외부로 면하게 하기 위해 상기 톱니모양내의 제1표면상에 접촉부를 갖는 반도체 칩(530)을 배치하는 단계를 추가로 포함하는 것을 특징으로 하는 컴플리언트 인터페이스 제조 방법.
  21. 제20항에 있어서, 임의의 부분적으로 경화된 패드를 더 완전하게 경화되게 하고 상기 가열 스프레더에 고착시키는 컴플리언트 패드를 향하여 열 스프레더를 압축하기 전에 상기 열 스프레더를 가열하는 단계를 추가로 포함하는 것을 특징으로 하는 컴플리언트 인터페이스 제조 방법.
  22. 제26항에 있어서, 상기 배치 단계 전에 하나의 단자(540)에 각 접촉부를 전기 접속시키는 단계를 추가로 포함하는 것을 특징으로 하는 컴플리언트 인터페이스 제조 방법.
  23. 제10항에 있어서, 상기 제2지지 구조의 제2표면을 접촉부를 갖는 반도체 칩의 접촉부 지탱 표면에 고착시키는 단계를 추가로 포함하는 것을 특징으로 하는 컴플리언트 인터페이스 제조 방법.
  24. 제24항에 있어서, 상기 제2지지 구조는 가요성 유전체 시트인 것을 특징으로 하는 컴플리언트 인터페이스 제조 방법.
  25. 제1항에 있어서, 상기 제공단계는 : 자체를 통하여 복수의 홀을 갖는 유지 소자(400)를 제공하는 단계와; 경화성 액체 탄성 중합체로 상기 홀딩 소자내의 홀을 충전시키는 단계와; 상기 탄성 중합체를 경화시키는 단계와; 상기 경화 단계 후에 상기 탄성 중합체를 상기 유전체 시트의 제1표면에 고착시키는 단계를 추가로 포함하는 것을 특징으로 하는 컴플리언트 인터페이스 제조 방법.
  26. 제1항에 있어서, 상기 제1지지 구조는 상기 제1표면과 복수의 단자(260)를 갖는 제2표면을 가지고, 상기 제공 단계는 복수의 컴플리언트 패드(220)를 지지 구조의 제1표면에 부착하는 단계를 포함하는데, 상기 패드는 자체의 사이에 채널을 한정하며, 상기 지지 구조는 접촉 지탱 표면과 그 표면상에 접촉부를 각각 갖는 복수의 분리 반도체 칩(240)을 포함하는데, 상기 칩들은 상기 접촉 지탱 표면이 일반적인 방향으로 면하고 제1칩 표면을 한정하기 위해 하나의 어레이내에 배치되고, 상기 접촉 단계는 컴플리언트 패드를 향하여 상기 제1칩 표면을 접착시키는 단계를 포함하고 상기 배치 단계는 상기 접촉 단계 후에 상기 채널들 사이에 액체를 배치하는 단계를 포함하며, 그것에 의해 상기 반도체 칩들과 상기 지지 구조가 단일 어셈블리를 한정하고, 상기 방법은 각 단자를 하나의 접촉부에 전기 접속시키는 단계를 추가로 포함하는 것을 특징으로 하는 컴플리언트 인터페이스 제조 방법.
  27. 제26항에 있어서, 상기 액체가 상기 채널들 사이에 도입된 후에 상기 액체를 경화시키는 단계를 추가로 포함하고, 그것에 의해 제1칩 표면과 지지 구조 사이의 컴플리언트 층이 형성되는 것을 특징으로 하는 컴플리언트 인터페이스 제조 방법.
  28. 제27항에 있어서, 상기 경화 단계 후에 상기 단일 어셈블리를 적어도 하나의 칩을 각각 포함하는 개개의 부품으로 부분 분할하는 단계를 추가로 포함하는 것을 특징으로 하는 컴플리언트 인터페이스 제조 방법.
  29. 제28항에 있어서, 상기 제1지지 구조는 가요성 유전체 시트이고, 상기 접촉 단계는 상기 컴플리언트 패드를 제1칩 표면으로 압축시키는 단계를 추가로 포함하는 것을 특징으로 하는 컴플리언트 인터페이스 제조 방법.
  30. 제1항에 있어서, 상기 제1지지 구조(300)는 상기 제1표면과 복수의 단자(305)를 갖는 제2표면을 가지고; 상기 제공 단계는 복수의 컴플리언트 패드(320)를 상기 지지 구조의 제1표면에 부착하는 단계를 포함하고, 상기 패드는 자체의 사이에 채널들을 한정하며; 상기 제2지지 구조는 복수의 접촉부를 각각 갖는 복수의 통합 반도체 칩을 갖는 웨이퍼(350)이고, 상기 접촉 단계는 상기 컴플리언트 패드를 향해 상기 웨이프를 접촉하는 단계를 포함하고; 상기 방법은 각 접촉부를 하나의 단자에 전기 접속시키는 단계를 추가로 포함하며; 상기 배치 단계는 상기 전기 접속 단계 후에 상기 채널들 사이에 상기 액체를 배치하는 단계를 포함하는 것을 특징으로 하는 컴플리언트 인터페이스 제조 방법.
  31. 제30항에 있어서, 상기 액체가 상기 채널들 사이에 도입된 후에 상기 액체를 경화시키는 단계를 추가로 포함하고, 그것에 의해 상기 웨이퍼와 상기 지지 구조 사이의 컴플리언트 층이 형성되는 것을 특징으로 하는 컴플리언트 인터페이스 제조 방법.
  32. 제31항에 있어서, 상기 경화 단계 후에 상기 웨이퍼를 각 칩으로 부분 분할하는 단계를 추가로 포함하는 것을 특징으로 하는 컴플리언트 인터페이스 제조방법.
  33. 제31항에 있어서, 상기 지지 구조는 가요성 유전체 시트이고, 상기 접촉단계는 상기 배치 단계 전에 상기 웨이퍼의 제1표면과 상기 유전체 시트 사이의 상기 컴플리언트 패드를 압축하는 단계를 포함하는 것을 특징으로 하는 컴플리언트 인터페이스 제조 방법.
  34. 제1표면을 갖는 제1지지 구조(100)와; 상기 지지 구조의 제1표면에 부착되어 그 사이에 채널들(117)을 한정하는 복수의 컴플리언트 패드(110)와; 상기 컴플리언트 패드를 향해 접촉되는 제2지지 구조의 제1표면과; 상기 채널들내에 배치되는 컴플리언트 충전자를 포함하는 것을 특징으로 하는 반도체 칩용 컴플리언트 인터페이스.
  35. 제34항에 있어서, 상기 충전자는 완전히 또는 부분적으로 굴곡된 탄성 중합체 또는 젤 캡슐 봉입물인 것을 특징으로 하는 반도체 칩용 컴플리언트 인터페이스.
  36. 제34항에 있어서, 상기 제1지지 구조는 제2표면상에 복수의 단자(140,207)를 갖는 가요성 유전체 시트(100,200)인 것을 특징으로 하는 반도체 칩용 컴플리언트 인터페이스.
  37. 제36항에 있어서, 상기 제2지지 구조는 제1표면상에 복수의 접촉부를 갖는 반도체 칩인 것을 특징으로 하는 반도체 칩용 컴플리언트 인터페이스.
  38. 제37항에 있어서, 상기 칩상의 각 접촉부를 하나의 단자에 전기 접속시키는 수단을 추가로 포함하는 것을 특징으로 하는 반도체 칩용 컴플리언트 인터페이스.
  39. 제36항에 있어서, 상기 제2지지 구조는 제1측면상에 톱니모양을 갖는 열 스프레더(520)이고, 상기 열 스프레더는 접촉부가 상기 제1지지 구조의 제1표면에 대향하여 면하게 하기 위해 톱니모양내에 배치되는 제1표면상에 접촉부를 갖는 반도체 칩을 추가로 포함하는 것을 특징으로 하는 반도체 칩용 컴플리언트 인터페이스.
  40. 제35항에 있어서, 상기 제2지지 구조는 가요성 유전체 시트(540)이고, 상기 제2지지 구조의 제2표면은 접촉부를 갖는 반도체 칩의 접촉부 지탱 표면에 고착되는 것을 특징으로 하는 반도체 칩용 컴플리언트 인터페이스.
  41. 제35항에 있어서, 상기 제2지지 구조는 접촉 지탱 표면상에 복수의 접촉부를 갖는 복수의 분리 반도체 칩(240)을 포함하고, 상기 칩들은 상기 접촉 지탱 표면이 일반적인 방향으로 면하고 상기 제2지지 구조의 제1표면을 한정하게 하기 위해 하나의 어레이에 배치되는 것을 특징으로 하는 반도체 칩용 컴플리언트 인터페이스.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019970701682A 1994-09-20 1995-09-20 반도체칩용컴플리언트인터페이스 KR100384255B1 (ko)

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