JPH01129431A - 半導体チップ実装方式 - Google Patents

半導体チップ実装方式

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Publication number
JPH01129431A
JPH01129431A JP62288788A JP28878887A JPH01129431A JP H01129431 A JPH01129431 A JP H01129431A JP 62288788 A JP62288788 A JP 62288788A JP 28878887 A JP28878887 A JP 28878887A JP H01129431 A JPH01129431 A JP H01129431A
Authority
JP
Japan
Prior art keywords
semiconductor chip
wiring pattern
insulating film
circuit board
conductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62288788A
Other languages
English (en)
Inventor
Kazuhito Ozawa
小沢 一仁
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP62288788A priority Critical patent/JPH01129431A/ja
Priority to US07/271,256 priority patent/US4955132A/en
Publication of JPH01129431A publication Critical patent/JPH01129431A/ja
Pending legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
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    • H01L24/31Structure, shape, material or disposition of the layer connectors after the connecting process
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    • H05K3/30Assembling printed circuits with electric components, e.g. with resistor
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    • H05K3/323Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives by applying an anisotropic conductive adhesive layer over an array of pads
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
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    • Y10T29/00Metal working
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    • Y10T29/49144Assembling to base an electrical component, e.g., capacitor, etc. by metal fusion

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 (技術分野) 本発明は、半導体チップ実装方式に関する。
(従来技術) 半導体チップをダイレクトボンディングにより回路基板
に実装する半導体チップ実装方式は、ICカードのよう
な薄型・軽量の製品にはきわめて有用である。また電極
の数が多い半導体チップを実装する場合ではこのダイレ
クトボンディングはワイヤーボンディング方式にくらべ
て実装速度とか実装の精度などの点で優れているなどの
理由で、最近広く利用されるようになってきている。
ところで、これまでのダイレクトボンディングによる半
導体チップ実装方式には、半導体チップの電極と配線パ
ターンとを接続するために凸状の半田バンブを半導体チ
ップ側あるいは配線パターン側に形成したものがある。
このようなバンブは、回路基板上の半導体チップと配線
パターンとが互いに電気的にショートしないようにする
ために半導体チップまたは配線パターンに対して所定の
高さでもって形成されることが必要とされているが、い
ずれにしても、このようなバンブ形式で半導体チップの
電極と配線パターンを接続することで半導体チップを回
路基板に実装する従来の方式では、バンブの加工に薄膜
金属の蒸着とか金属メツキなどの手間のかかる製造工程
を要するためにその加工費がたいへん高くついており、
一般的な普及には至っていないのが実情である。
(発明の目的) 本発明は、このような問題点に鑑みてなされたものであ
って、バンプ形式に代わり簡単に半導体チップの電極と
配線パターンとを接続できるようにして加工費が安くて
すむ半導体チップ実装方式を提供することを目的として
いる。
(発明の構成) このような目的を達成するために、本発明は、半導体チ
ップの電極に接続されろ配線パターンを形成された回路
基板と、前記回路基板上に形成された配線パターン上に
設けられて、前記半導体チップのチップ面積よりも大き
なフィルム面積を持ち、かつ面半導体チップの電極形状
に合わせて穴開は加工された絶縁性フィルムと、前記絶
縁性フィルムに形成されノニ大の内部に充填されて、そ
の穴を介して対向する前記半導体チップの電極と前記回
路基板上の配線バタ・−ンとを接続する導電体とで構成
されたことを特徴としている。
この構成において、回路基板の配線パターン」二に絶縁
性フィルムを設ける。この場合、絶縁性フィルムのフィ
ルム面積は半導体チップのチップ面積より6広いから、
半導体チップの周辺エツジがその配線パターンに電気的
にショートするおそれがない。そして、絶縁性フィルム
の穴に充填された導電体により、半導体チップの電極と
回路基板上の配線パターンとが電気的に接続される。
(実施例) 以下、本発明の実施例を図面を参照して詳細に説明する
。第1図は本発明の実施例に係る半導体デツプ実装方式
を示す斜視図であり、第2図は第1図の八−A線に沿う
断面図であり、第3図は第2図の要部の拡大断面図であ
る。これらの図において、2は半導体チップの電極に接
続される配線パターンを形成されたポリエステルフィル
ム製の回路基板、4は回路基板2上に導電性インクでも
ってスクリーン印刷により形成された配線パターン、6
は配線パターン4を含めてその回路基板2上に設けられ
た膜厚の薄い絶縁性フィルム、8は半導体チップである
絶縁性フィルム6は半導体チップ8のチップ面積よりも
大きなフィルム面積を持ち、かつ半導体チップ8の電極
10の形状に合わせて穴12を形成加工されている。こ
の絶縁性フィルム6に形成された穴12の内部にはその
穴12を介して対向する半導体チップ8の電極IOと回
路基板2上の配線パターン4とを接続する導電体14が
充填されている。この導電体14は、配線パターン4の
一部で構成されている。そして、この場合、半導体デツ
プ8と配線パターン4との間には、異方性導電接着剤1
6が設けらていて、導電体14はこの異方性導電接着剤
16を介して間接的に半導体チブブ8の電極lOと配線
パターン4とを電気的に接続するようになっている。1
8は半導体チップ8に設けられた表面保護膜である。
この上うな構成を有する本実施例の半導体チップ実装方
式にあっては、絶縁性フィルム6のフィルム面積が半導
体チップ8のチップ面積よりも広いから、半導体チップ
8の周辺エツジがその配線パターン4に電気的にショー
トするおそれがない。
また、絶縁性フィルム6の穴12に充填された導電体1
4により、半導体チップ8の電極10と回路基板2上の
配線パターン4とが電気的に接続される。
次に、上記における半導体チップ実装要領について第4
図を参照して説明する。まず、第4図(a)に示すよう
に、導電性インクを用いてスクリーン印Illの手法で
配線パターン4を形成された回路基板2を用意し、そし
て、用意された回路基板2の上に、穴開は加工されたフ
レキシブルで、かつ厚さ5〜10t1mのポリエステル
製絶縁性フィルム6を矢印方向に向けて載せる。この載
置状態で第4図(b)に示すように、熱圧着により絶縁
性フィルム6を回路基板2上に接告する。この抜管にお
いては、導電性インクに含まれているパインダー樹脂が
熱溶融して絶縁性フィルム6は配線パターン4上に固定
されるとともに、あらかじめ穴開は加工された絶縁性フ
ィルム6の穴I2の内部に熱溶融した導電性インクが浸
入してくる。この浸入してきた導電性インクが導電体1
4となる。
次に、配線パターン4を含めて回路基板2上の所要箇所
に熱可塑性または熱硬化性の、かつ最大10μm以下の
径で平均粒径が5μm前後の金属粒子を含んだ異方性導
電接着剤16を5〜91tmの厚さで設けるとともに、
その異方性導電接着剤16を介して半導体チップ8を、
その電極lOが絶縁性フィルム6の穴12に対向するよ
うに(2て配線パターン4」二に載せる。そうすると、
異方性導電接着剤16の異方性により、導電体14と半
導体チップ8のfit極lOとが電気的に接続される。
このようにして、第1図〜第3図に示した本実施例によ
る半導体チップの実装が完了する。
第5図は本実施例の半導体チップ実装における他の組み
立て要領の説明に供する図である。まず、あらかじめ形
成された金属箔からなる配線パターン4hく形成された
回路基板2を用意する。そして、第5図(a)および第
5図(b)に示すようにその回路基板2の上から、あら
かじめホットメルト接着剤20を塗布された絶縁性フィ
ルム6を載せるとともに、絶縁性フィルム6を載せた状
態で熱圧着してその絶縁性フィルム6を回路基板2上に
固定する。次に、第5図(C)に示すように、絶縁性フ
ィルム6に、適宜の穴開は加工手段で半導体デツプ8の
電極10に対向して穴12を形成する。この場合、その
穴開は加工手段としては、超音波発生ヘッド、熱圧着ヘ
ッドを用いて絶縁性フィルム6を加熱溶融する方法とか
、マスクをかぶせて赤外線照射する方法とか、レーザー
光線で絶縁性フィルム6の所要箇所を焼き飛ばす方法と
か、その他の方法がある。このようにして、穴開は加工
された絶縁性フィルム6におけるその穴12に、第5図
(d)に示すように、導電性インクを埋め込んで導電体
14を形成する。この導電体の埋め込みは、例えば全体
に均一に導電性インクを塗布し、刷毛のようなもので不
要な導電性インクをがきとる方法とか、金属膜に導電性
のホットメルト接着剤を組み合わせた熱転写フィルムを
かぶせて、絶縁性フィルム6の穴12から臨む配線パタ
ーン4にその金属膜を転写する方法とか、針状の先端部
を持つノズルから導電性インクをその絶縁性フィルム6
の穴12に直接転写する方法とか、その他の方法がある
。このようにして、第1図〜第3図の半導体チップの実
装が完了する。
(発明の効果) 以上のように本発明によれば、バンブ形式に代わり簡単
に半導体チップの電極と配線パターンとを接続できるか
ら、加工費が安くてすむ半導体チップ実装方式を提供す
ることができる。
【図面の簡単な説明】
第1図は本発明の実施例に係る半導体チップ実装方式を
示す斜視図、第2図は第1図のA−A線に沿う断面図、
第3図は第2図の要部の拡大断面図、第4図は本発明方
式による組み立て要領の説明に供する図、第5図は本発
明方式による他の組み立て要領の説明に供する図である
。 2・・・回路基板、4・・・配線パターン、6・・・絶
縁性フィルム、8・・・半導体チップ、lO・・・半導
体チップの71!極、12・・・絶縁性フィルムの穴、
14・・・導電体、16・・・異方性導電接着剤。

Claims (1)

    【特許請求の範囲】
  1. (1)半導体チップの電極に接続される配線パターンを
    形成された回路基板と、 前記回路基板上に形成された配線パターン上に設けられ
    て、前記半導体チップのチップ面積よりも大きなフィル
    ム面積を持ち、かつ前記半導体チップの電極形状に合わ
    せて穴開け加工された絶縁性フィルムと 前記絶縁性フィルムに形成された穴の内部に充填されて
    、その穴を介して対向する前記半導体チップの電極と前
    記回路基板上の配線パターンとを接続する導電体 とで構成されたことを特徴とする半導体チップ実装方式
JP62288788A 1987-11-16 1987-11-16 半導体チップ実装方式 Pending JPH01129431A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP62288788A JPH01129431A (ja) 1987-11-16 1987-11-16 半導体チップ実装方式
US07/271,256 US4955132A (en) 1987-11-16 1988-11-15 Method for mounting a semiconductor chip

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62288788A JPH01129431A (ja) 1987-11-16 1987-11-16 半導体チップ実装方式

Publications (1)

Publication Number Publication Date
JPH01129431A true JPH01129431A (ja) 1989-05-22

Family

ID=17734728

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62288788A Pending JPH01129431A (ja) 1987-11-16 1987-11-16 半導体チップ実装方式

Country Status (2)

Country Link
US (1) US4955132A (ja)
JP (1) JPH01129431A (ja)

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