JP2940269B2 - 集積回路素子の接続方法 - Google Patents
集積回路素子の接続方法Info
- Publication number
- JP2940269B2 JP2940269B2 JP34233891A JP34233891A JP2940269B2 JP 2940269 B2 JP2940269 B2 JP 2940269B2 JP 34233891 A JP34233891 A JP 34233891A JP 34233891 A JP34233891 A JP 34233891A JP 2940269 B2 JP2940269 B2 JP 2940269B2
- Authority
- JP
- Japan
- Prior art keywords
- integrated circuit
- electrode
- circuit element
- resin
- metal bump
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000034 method Methods 0.000 title claims description 23
- 229910052751 metal Inorganic materials 0.000 claims description 29
- 239000002184 metal Substances 0.000 claims description 29
- 239000011347 resin Substances 0.000 claims description 19
- 229920005989 resin Polymers 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 19
- 239000004840 adhesive resin Substances 0.000 claims description 5
- 229920006223 adhesive resin Polymers 0.000 claims description 5
- 229920001187 thermosetting polymer Polymers 0.000 claims description 3
- 238000001035 drying Methods 0.000 claims description 2
- 238000001459 lithography Methods 0.000 claims description 2
- 230000006835 compression Effects 0.000 claims 1
- 238000007906 compression Methods 0.000 claims 1
- 238000002788 crimping Methods 0.000 claims 1
- 239000002245 particle Substances 0.000 description 9
- 229920001721 polyimide Polymers 0.000 description 7
- 239000004642 Polyimide Substances 0.000 description 5
- 150000002148 esters Chemical class 0.000 description 5
- 239000000178 monomer Substances 0.000 description 5
- KCTAWXVAICEBSD-UHFFFAOYSA-N prop-2-enoyloxy prop-2-eneperoxoate Chemical compound C=CC(=O)OOOC(=O)C=C KCTAWXVAICEBSD-UHFFFAOYSA-N 0.000 description 5
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 4
- 239000003999 initiator Substances 0.000 description 4
- 229920005575 poly(amic acid) Polymers 0.000 description 4
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 3
- 239000004925 Acrylic resin Substances 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 229920003986 novolac Polymers 0.000 description 3
- 230000000704 physical effect Effects 0.000 description 3
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 2
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 2
- 238000003776 cleavage reaction Methods 0.000 description 2
- 238000006356 dehydrogenation reaction Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000009719 polyimide resin Substances 0.000 description 2
- 238000006116 polymerization reaction Methods 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 150000003512 tertiary amines Chemical class 0.000 description 2
- FYSNRJHAOHDILO-UHFFFAOYSA-N thionyl chloride Chemical compound ClS(Cl)=O FYSNRJHAOHDILO-UHFFFAOYSA-N 0.000 description 2
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- NGNBDVOYPDDBFK-UHFFFAOYSA-N 2-[2,4-di(pentan-2-yl)phenoxy]acetyl chloride Chemical compound CCCC(C)C1=CC=C(OCC(Cl)=O)C(C(C)CCC)=C1 NGNBDVOYPDDBFK-UHFFFAOYSA-N 0.000 description 1
- -1 2-hydroxyethyl methanolate Chemical compound 0.000 description 1
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 1
- OELQSSWXRGADDE-UHFFFAOYSA-N 2-methylprop-2-eneperoxoic acid Chemical compound CC(=C)C(=O)OO OELQSSWXRGADDE-UHFFFAOYSA-N 0.000 description 1
- 208000032368 Device malfunction Diseases 0.000 description 1
- 229910000846 In alloy Inorganic materials 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 1
- 229910000978 Pb alloy Inorganic materials 0.000 description 1
- 229920002845 Poly(methacrylic acid) Polymers 0.000 description 1
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- DAKWPKUUDNSNPN-UHFFFAOYSA-N Trimethylolpropane triacrylate Chemical compound C=CC(=O)OCC(CC)(COC(=O)C=C)COC(=O)C=C DAKWPKUUDNSNPN-UHFFFAOYSA-N 0.000 description 1
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 150000003863 ammonium salts Chemical class 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical group C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 description 1
- 239000012965 benzophenone Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229930003836 cresol Natural products 0.000 description 1
- 150000004985 diamines Chemical class 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- SUPCQIBBMFXVTL-UHFFFAOYSA-N ethyl 2-methylprop-2-enoate Chemical compound CCOC(=O)C(C)=C SUPCQIBBMFXVTL-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 1
- 239000011976 maleic acid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 125000005397 methacrylic acid ester group Chemical group 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920005596 polymer binder Polymers 0.000 description 1
- 239000002491 polymer binding agent Substances 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- YRHRIQCWCFGUEQ-UHFFFAOYSA-N thioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC=CC=C3SC2=C1 YRHRIQCWCFGUEQ-UHFFFAOYSA-N 0.000 description 1
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
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- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/13101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01024—Chromium [Cr]
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- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
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- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/49126—Assembling bases
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
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- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/4913—Assembling to base an electrical component, e.g., capacitor, etc.
- Y10T29/49144—Assembling to base an electrical component, e.g., capacitor, etc. by metal fusion
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- Wire Bonding (AREA)
Description
と実装基板上に設けた電極との接続方法に関するもので
ある。
料としては、高分子材料の表面に導電性を有する金属薄
層が形成された導電粒子を含む接着剤組成物が用いられ
ており、接続としては、180〜200℃で20〜30
kg/cm2程度の熱圧着方法が用いられていた。
は、従来のLSIチップの接続方法を工程順に示す基板
の断面図である。このLSIチップの接続は次のとおり
である。すなわち、図4(a)に示すように、電極パッ
ド2上に金属バンプ51が形成されたLSIチップ1
と、この金属バンプ51に対応して形成された電極端子
4を有する基板3とを導電性粒子11を分散させて含有
している熱接着樹脂10を介して向き合わせる。次に、
図4(b)に示すように、LSIチップ1を基板3とに
押し付け、加熱することにより、熱接着樹脂10を軟化
させ、電極パッド2と電極端子4とを導電性粒子11に
より、接続することによって行われる。また、この接続
には、金属バンプ51を用いずに、電極パッド2と電極
端子4の間のみで、導電性粒子11を介して行われる場
合もある。
装方法では、電極パッド2と電極端子4間を電気的に接
続している導電性粒子11の数量が多くなると、隣合う
電極パッド、あるいは電極端子間でショートあるいは電
流リークが発生する。これを避けるために導電性粒子1
1の数量を少なくすると、接続抵抗が増大すると共にば
らつくという問題も発生していた。
になる接続箇所が発生していた。さらに、最近の接続寸
法の高精細化に伴って、この傾向はますます著しくなっ
ている。また、LSIチップと基板が厳密に平行なまま
押し付けることは極めて難しく、各々の電極端子間のギ
ャップにばらつきが発生し、各電極端子間の導電粒子の
数量にばらつきが生じ、結果として接続が不安定になる
という問題があった。これらの現象は、デバイスの動作
不良を引き起こす重大な欠点となっている。
しかも高精細化が可能なLSIチップの接続方法を提供
することにある。
め、本発明による集積回路素子の接続方法においては、
集積回路素子に形成された電極パッドと該電極パッドに
対応して基板に形成された電極端子とを金属バンプを介
して接続する集積回路素子の接続方法であって、前記電
極パッドあるいは、前記電極端子の少なくとも一方に、
弾性変形可能な金属バンプを形成する工程と、前記集積
回路素子側あるいは、基板側表面の少なくとも一方に、
活性エネルギー線により硬化性を有する樹脂を塗布後、
乾燥する工程と、前記集積回路素子あるいは、基板表面
の接着剤樹脂をリソグラフィー及び現像により、金属バ
ンプを含む電極パッド部分あるいは、金属バンプを含む
電極端子部分の樹脂を除去する工程と、前記電極パッド
と電極端子とを向き合わせ、前記回路素子と基板間を圧
着することにより、金属バンプを弾性変形させ、該金属
バンプと対向する電極パッドあるいは電極端子を密着さ
せた後、熱圧着して接着固定する工程とを含むものであ
る。
を有する樹脂は、同時に熱硬化性をも有するものであ
る。
なソフトメタルバンプを形成して直接密着させるため、
接続が確実となり、接続抵抗の変動分は小さい。
化する樹脂としては、アクリレート系,エポキシアクリ
レート系,ポリイミド系等の樹脂が用いられる。
樹脂は、バインダー,モノマー類,光反応開始剤,添加
剤等の組成からなっているものを用いることができる。
ポリメタクリル酸エステルなどの樹脂が、アクリル酸,
メタクリル酸,マレイン酸などの不飽和酸と共重合し、
合成される。高分子バインダー樹脂中にカルボキシル基
を有しているものは、アルカリ成分である炭酸ソーダな
どの水溶液に溶解するため、アルカリ現像が可能であ
る。
うにカルボキシル基のようなアルカリ反応基を有してい
ない場合には、溶剤にて現像を行うことができる。より
強固な硬化膜を得るために、エポキシ反応系とアクリレ
ート反応系を合わせ持つ系も用いられる。
ク,クレゾールノボラック,ビスフェノールAなどが使
用される。
ラックエポキシアクリレートなどのアクリル変性エポキ
シオリゴマー類が使用される。
スリンク程度、硬化物性,剥離性に大きく影響する。全
体の物性バランスをとるために、単官能から多官能の組
み合わせで使用させる。単官能性モノマーとしては、た
とえば、ヒドロキシメタアクリレートなどが挙げられ、
多官能性モノマーとしては、トリメチロールプロパント
リアクリレートなどが代表的である。
する必須成分である。水素引き抜き反応,ラジカル開裂
反応などの開始剤自身の物性により重合が開始される。
水素引き抜き型の代表物質は、ベンゾフェノンである。
ラジカル開裂型の例として、ベンジルジメチルケタール
が挙げられる。更に、チオキサントン系の光反応開始剤
も用いられる。
ミドを用いることができる。感光性ポリイミドには、前
駆体に感光基がエステル結合により付与されているエス
テルタイプとイオン状態で付与されているイオン結合タ
イプが知られている。
ポリイミドと同じポリアミック酸二無水物に感光基を持
った2−ヒドロキシエチルメタクノリートを反応させて
エステル化し、更に、塩化チオニルで酸クロライドにし
た後、ジアミンを反応させて、ポリアミック酸のメタク
リル酸エステルとしたもの、即ち感光基のエチルメタク
リレートがポリアミック酸にエステル結合を介して共有
結合した形のものが用いられる。
基を持った3級アミンとカルボキシル基を有したポリア
ミック酸が溶解したものが知られている。このタイプ
は、露光により、3級アミンがポリアミック酸中のカル
ボキシル基とイオン反応してアンモニウム塩を形成し、
この部分に溶解度が低下することによりパターンが形成
されることになる。
安定で、接続信頼性が高く、しかも高精細化が可能なL
SIチップの接続方法を提供するものである。
する。図1,図2は、本発明の一実施例としてLSIチ
ップの接続方法を工程順に示す断面図である。図1は工
程の前段、図2は工程の後段を示している。まず図1に
ついて、(a)に示すように、集積回路1(以下、LS
Iチップという)の表面には、例えば、Au/Cr/A
rの3層金属膜(それぞれの膜厚は、1.0μm,0.
05μm,0.5μm)、あるいはAu/TiN/Al
の3層金属膜(それぞれの膜厚は、0.8μm,0.0
8μm,0.2μm)で構成された電極パッド2が形成
され、一方基板3には、電極パッド2に対応して電極端
子4が形成されている。
変形可能な金属バンプ5(以下ソフトメタルバンプ)を
一体的に形成する。このソフトメタルバンプの成分とし
ては、In(インジウム)金属を用いるが、塑性変形量
をコントロールする必要がある場合には、インジウムと
鉛等との合金を用いてもよい。
硬化性を有する樹脂6をスピンナー等で均一に塗布後、
乾燥する。光熱硬化性を有する樹脂としては、例えば、
エポキシアクリレート系でネガ型の東京応化工業製フォ
トソルダーレジストOPSR(商品名)がある。また高
温タイプとして、ポリイミド系でネガ型エステルタイプ
である旭化成工業(株)製「パイメル」(商品名)を用
いた。
トリソグラフィーによりフォトマスクを通して紫外線8
露光を行う。このとき、電極端子4上の樹脂層6を遮光
して露光を行う。次に、(d)に示すように、現像液9
にて現像を行い、電極端子4上の樹脂層を除去してマス
クパターンを作成する。
プ5と電極端子4とを向き合わせ、LSIチップ1を基
板3上に乗せ、ソフトメタルバンプ5と電極端子4とを
よく密着させる。さらに、10kg/cm2程度荷重を
加えてLSIチップ1を圧下し、エポキシアクリレート
タイプでは、150℃程度で、ポリイミドタイプでは2
50℃程度に加熱する。これらによって、ソフトメタル
バンプ5を弾性変形させ、その反発力によりソフトメタ
ルバンプ5と電極端子4とを密着させる。
とにより、LSIチップ1と基板3とを接着固定すると
共にソフトメタルバンプ接合部分の固定を行い、図示の
素子を完成する。なお、光軟化性を有する樹脂を、LS
Iチップ1側から塗布し、以下、工程順に従って接続を
行ってもよい。
ップの接続方法によれば、従来のように接着剤樹脂中に
導電粒子を分散した方法でないので、高精細化接続が確
実に、容易に信頼性よく実施できるという極めて顕著な
効果が得られる。また、金属バンプをLSIチップの電
極パッドあるいは基板の電極端子に直接密着させるた
め、接続が確実に行われると同時に、その接続抵抗の変
動分を小さくすることもできる。
示す断面図である。
示す断面図である。
る。
断面図である。
Claims (2)
- 【請求項1】 集積回路素子に形成された電極パッドと
該電極パッドに対応して基板に形成された電極端子とを
金属バンプを介して接続する集積回路素子の接続方法で
あって、 前記電極パッドあるいは、前記電極端子の少なくとも一
方に、弾性変形可能な金属バンプを形成する工程と、 前記集積回路素子側あるいは、基板側表面の少なくとも
一方に、活性エネルギー線により硬化性を有する樹脂を
塗布後、乾燥する工程と、 前記集積回路素子あるいは、基板表面の接着剤樹脂をリ
ソグラフィー及び現像により、金属バンプを含む電極パ
ッド部分あるいは、金属バンプを含む電極端子部分の樹
脂を除去する工程と、 前記電極パッドと電極端子とを向き合わせ、前記回路素
子と基板間を圧着することにより、金属バンプを弾性変
形させ、該金属バンプと対向する電極パッドあるいは電
極端子を密着させた後、熱圧着して接着固定する工程と
を含むことを特徴とする集積回路素子の接続方法。 - 【請求項2】 前記活性エネルギー線により硬化性を有
する樹脂は、同時に熱硬化性をも有するものであること
を特徴とする請求項1に記載の集積回路素子の接続方
法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP41428990 | 1990-12-26 | ||
JP2-414289 | 1990-12-26 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH0536761A JPH0536761A (ja) | 1993-02-12 |
JP2940269B2 true JP2940269B2 (ja) | 1999-08-25 |
Family
ID=18522784
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP34233891A Expired - Lifetime JP2940269B2 (ja) | 1990-12-26 | 1991-11-30 | 集積回路素子の接続方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US5384952A (ja) |
EP (1) | EP0493131B1 (ja) |
JP (1) | JP2940269B2 (ja) |
DE (1) | DE69125128T2 (ja) |
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1991
- 1991-11-30 JP JP34233891A patent/JP2940269B2/ja not_active Expired - Lifetime
- 1991-12-26 US US07/814,115 patent/US5384952A/en not_active Expired - Lifetime
- 1991-12-27 EP EP91312059A patent/EP0493131B1/en not_active Expired - Lifetime
- 1991-12-27 DE DE69125128T patent/DE69125128T2/de not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
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DE69125128D1 (de) | 1997-04-17 |
DE69125128T2 (de) | 1997-06-19 |
EP0493131B1 (en) | 1997-03-12 |
JPH0536761A (ja) | 1993-02-12 |
EP0493131A1 (en) | 1992-07-01 |
US5384952A (en) | 1995-01-31 |
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