JP2940269B2 - 集積回路素子の接続方法 - Google Patents

集積回路素子の接続方法

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Publication number
JP2940269B2
JP2940269B2 JP34233891A JP34233891A JP2940269B2 JP 2940269 B2 JP2940269 B2 JP 2940269B2 JP 34233891 A JP34233891 A JP 34233891A JP 34233891 A JP34233891 A JP 34233891A JP 2940269 B2 JP2940269 B2 JP 2940269B2
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Japan
Prior art keywords
integrated circuit
electrode
circuit element
resin
metal bump
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Expired - Lifetime
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JP34233891A
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English (en)
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JPH0536761A (ja
Inventor
孝二 松井
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NEC Corp
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NEC Corp
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Publication of JP2940269B2 publication Critical patent/JP2940269B2/ja
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Description

【発明の詳細な説明】
【0001】
【産業上の利用分野】本発明は、LSI等の微細な電極
と実装基板上に設けた電極との接続方法に関するもので
ある。
【0002】
【従来の技術】従来、この種の電気接続用異方性導電材
料としては、高分子材料の表面に導電性を有する金属薄
層が形成された導電粒子を含む接着剤組成物が用いられ
ており、接続としては、180〜200℃で20〜30
kg/cm2程度の熱圧着方法が用いられていた。
【0003】従来の実装方法を以下に説明すると、図4
は、従来のLSIチップの接続方法を工程順に示す基板
の断面図である。このLSIチップの接続は次のとおり
である。すなわち、図4(a)に示すように、電極パッ
ド2上に金属バンプ51が形成されたLSIチップ1
と、この金属バンプ51に対応して形成された電極端子
4を有する基板3とを導電性粒子11を分散させて含有
している熱接着樹脂10を介して向き合わせる。次に、
図4(b)に示すように、LSIチップ1を基板3とに
押し付け、加熱することにより、熱接着樹脂10を軟化
させ、電極パッド2と電極端子4とを導電性粒子11に
より、接続することによって行われる。また、この接続
には、金属バンプ51を用いずに、電極パッド2と電極
端子4の間のみで、導電性粒子11を介して行われる場
合もある。
【0004】
【発明が解決しようとする課題】上述した従来の接続実
装方法では、電極パッド2と電極端子4間を電気的に接
続している導電性粒子11の数量が多くなると、隣合う
電極パッド、あるいは電極端子間でショートあるいは電
流リークが発生する。これを避けるために導電性粒子1
1の数量を少なくすると、接続抵抗が増大すると共にば
らつくという問題も発生していた。
【0005】また甚だしい場合には、電気的にオープン
になる接続箇所が発生していた。さらに、最近の接続寸
法の高精細化に伴って、この傾向はますます著しくなっ
ている。また、LSIチップと基板が厳密に平行なまま
押し付けることは極めて難しく、各々の電極端子間のギ
ャップにばらつきが発生し、各電極端子間の導電粒子の
数量にばらつきが生じ、結果として接続が不安定になる
という問題があった。これらの現象は、デバイスの動作
不良を引き起こす重大な欠点となっている。
【0006】本発明の目的は、再現性が良く、安定で、
しかも高精細化が可能なLSIチップの接続方法を提供
することにある。
【0007】
【課題を解決するための手段】上記目的を達成するた
め、本発明による集積回路素子の接続方法においては、
集積回路素子に形成された電極パッドと該電極パッドに
対応して基板に形成された電極端子とを金属バンプを介
して接続する集積回路素子の接続方法であって、前記電
極パッドあるいは、前記電極端子の少なくとも一方に、
弾性変形可能な金属バンプを形成する工程と、前記集積
回路素子側あるいは、基板側表面の少なくとも一方に、
活性エネルギー線により硬化性を有する樹脂を塗布後、
乾燥する工程と、前記集積回路素子あるいは、基板表面
の接着剤樹脂をリソグラフィー及び現像により、金属バ
ンプを含む電極パッド部分あるいは、金属バンプを含む
電極端子部分の樹脂を除去する工程と、前記電極パッド
と電極端子とを向き合わせ、前記回路素子と基板間を圧
着することにより、金属バンプを弾性変形させ、該金属
バンプと対向する電極パッドあるいは電極端子を密着さ
せた後、熱圧着して接着固定する工程とを含むものであ
る。
【0008】また、前記活性エネルギー線により硬化性
を有する樹脂は、同時に熱硬化性をも有するものであ
る。
【0009】
【作用】電極パッドあるいは、電極端子に弾性変形可能
なソフトメタルバンプを形成して直接密着させるため、
接続が確実となり、接続抵抗の変動分は小さい。
【0010】本発明に係わる活性エネルギー線により硬
化する樹脂としては、アクリレート系,エポキシアクリ
レート系,ポリイミド系等の樹脂が用いられる。
【0011】アクリレート系,エポキシアクリレート系
樹脂は、バインダー,モノマー類,光反応開始剤,添加
剤等の組成からなっているものを用いることができる。
【0012】バインダーは、ポリアクリル酸エステル,
ポリメタクリル酸エステルなどの樹脂が、アクリル酸,
メタクリル酸,マレイン酸などの不飽和酸と共重合し、
合成される。高分子バインダー樹脂中にカルボキシル基
を有しているものは、アルカリ成分である炭酸ソーダな
どの水溶液に溶解するため、アルカリ現像が可能であ
る。
【0013】ポリメチルメタクリレート系共重合物のよ
うにカルボキシル基のようなアルカリ反応基を有してい
ない場合には、溶剤にて現像を行うことができる。より
強固な硬化膜を得るために、エポキシ反応系とアクリレ
ート反応系を合わせ持つ系も用いられる。
【0014】エポキシ系としては、フェノールノボラッ
ク,クレゾールノボラック,ビスフェノールAなどが使
用される。
【0015】アクリレート系としては、フェノールノボ
ラックエポキシアクリレートなどのアクリル変性エポキ
シオリゴマー類が使用される。
【0016】モノマー類は、重合に関与し、全体のクロ
スリンク程度、硬化物性,剥離性に大きく影響する。全
体の物性バランスをとるために、単官能から多官能の組
み合わせで使用させる。単官能性モノマーとしては、た
とえば、ヒドロキシメタアクリレートなどが挙げられ、
多官能性モノマーとしては、トリメチロールプロパント
リアクリレートなどが代表的である。
【0017】光反応開始剤は、モノマーの光反応に関与
する必須成分である。水素引き抜き反応,ラジカル開裂
反応などの開始剤自身の物性により重合が開始される。
水素引き抜き型の代表物質は、ベンゾフェノンである。
ラジカル開裂型の例として、ベンジルジメチルケタール
が挙げられる。更に、チオキサントン系の光反応開始剤
も用いられる。
【0018】ポリイミド系樹脂としては、感光性ポリイ
ミドを用いることができる。感光性ポリイミドには、前
駆体に感光基がエステル結合により付与されているエス
テルタイプとイオン状態で付与されているイオン結合タ
イプが知られている。
【0019】エステルタイプとしては、例えば、通常の
ポリイミドと同じポリアミック酸二無水物に感光基を持
った2−ヒドロキシエチルメタクノリートを反応させて
エステル化し、更に、塩化チオニルで酸クロライドにし
た後、ジアミンを反応させて、ポリアミック酸のメタク
リル酸エステルとしたもの、即ち感光基のエチルメタク
リレートがポリアミック酸にエステル結合を介して共有
結合した形のものが用いられる。
【0020】イオン結合タイプとしては、例えば、感光
基を持った3級アミンとカルボキシル基を有したポリア
ミック酸が溶解したものが知られている。このタイプ
は、露光により、3級アミンがポリアミック酸中のカル
ボキシル基とイオン反応してアンモニウム塩を形成し、
この部分に溶解度が低下することによりパターンが形成
されることになる。
【0021】これら樹脂の使用により、再現性が良く、
安定で、接続信頼性が高く、しかも高精細化が可能なL
SIチップの接続方法を提供するものである。
【0022】
【実施例】以下、本発明について、図面を参照して説明
する。図1,図2は、本発明の一実施例としてLSIチ
ップの接続方法を工程順に示す断面図である。図1は工
程の前段、図2は工程の後段を示している。まず図1に
ついて、(a)に示すように、集積回路1(以下、LS
Iチップという)の表面には、例えば、Au/Cr/A
rの3層金属膜(それぞれの膜厚は、1.0μm,0.
05μm,0.5μm)、あるいはAu/TiN/Al
の3層金属膜(それぞれの膜厚は、0.8μm,0.0
8μm,0.2μm)で構成された電極パッド2が形成
され、一方基板3には、電極パッド2に対応して電極端
子4が形成されている。
【0023】本発明においては、電極パッド2上に弾性
変形可能な金属バンプ5(以下ソフトメタルバンプ)を
一体的に形成する。このソフトメタルバンプの成分とし
ては、In(インジウム)金属を用いるが、塑性変形量
をコントロールする必要がある場合には、インジウムと
鉛等との合金を用いてもよい。
【0024】次に(b)に示すように、基板3上に光熱
硬化性を有する樹脂6をスピンナー等で均一に塗布後、
乾燥する。光熱硬化性を有する樹脂としては、例えば、
エポキシアクリレート系でネガ型の東京応化工業製フォ
トソルダーレジストOPSR(商品名)がある。また高
温タイプとして、ポリイミド系でネガ型エステルタイプ
である旭化成工業(株)製「パイメル」(商品名)を用
いた。
【0025】次に、図2中、(c)に示すように、フォ
トリソグラフィーによりフォトマスクを通して紫外線8
露光を行う。このとき、電極端子4上の樹脂層6を遮光
して露光を行う。次に、(d)に示すように、現像液9
にて現像を行い、電極端子4上の樹脂層を除去してマス
クパターンを作成する。
【0026】次に図3に示すように、ソフトメタルバン
プ5と電極端子4とを向き合わせ、LSIチップ1を基
板3上に乗せ、ソフトメタルバンプ5と電極端子4とを
よく密着させる。さらに、10kg/cm2程度荷重を
加えてLSIチップ1を圧下し、エポキシアクリレート
タイプでは、150℃程度で、ポリイミドタイプでは2
50℃程度に加熱する。これらによって、ソフトメタル
バンプ5を弾性変形させ、その反発力によりソフトメタ
ルバンプ5と電極端子4とを密着させる。
【0027】さらに、軟化した樹脂を温度低下させるこ
とにより、LSIチップ1と基板3とを接着固定すると
共にソフトメタルバンプ接合部分の固定を行い、図示の
素子を完成する。なお、光軟化性を有する樹脂を、LS
Iチップ1側から塗布し、以下、工程順に従って接続を
行ってもよい。
【0028】
【発明の効果】以上説明したように、本発明のLSIチ
ップの接続方法によれば、従来のように接着剤樹脂中に
導電粒子を分散した方法でないので、高精細化接続が確
実に、容易に信頼性よく実施できるという極めて顕著な
効果が得られる。また、金属バンプをLSIチップの電
極パッドあるいは基板の電極端子に直接密着させるた
め、接続が確実に行われると同時に、その接続抵抗の変
動分を小さくすることもできる。
【図面の簡単な説明】
【図1】本発明に係わるLSIの接続方法の前段工程を
示す断面図である。
【図2】本発明に係わるLSIの接続方法の後段工程を
示す断面図である。
【図3】本発明方法によって得られた素子の断面図であ
る。
【図4】従来のLSIチップの接続方法を工程順に示す
断面図である。
【符号の説明】
1 LSIチップ 2 電極パッド 3 基板 4 電極端子 5 弾性変形可能な金属バンプ 6 光熱硬化性を有する樹脂 7 フォトマスク 8 紫外線 9 現像液 10 熱接着樹脂 11 導電性粒子 51 金属バンプ

Claims (2)

    (57)【特許請求の範囲】
  1. 【請求項1】 集積回路素子に形成された電極パッドと
    該電極パッドに対応して基板に形成された電極端子とを
    金属バンプを介して接続する集積回路素子の接続方法で
    あって、 前記電極パッドあるいは、前記電極端子の少なくとも一
    方に、弾性変形可能な金属バンプを形成する工程と、 前記集積回路素子側あるいは、基板側表面の少なくとも
    一方に、活性エネルギー線により硬化性を有する樹脂を
    塗布後、乾燥する工程と、 前記集積回路素子あるいは、基板表面の接着剤樹脂をリ
    ソグラフィー及び現像により、金属バンプを含む電極パ
    ッド部分あるいは、金属バンプを含む電極端子部分の樹
    脂を除去する工程と、 前記電極パッドと電極端子とを向き合わせ、前記回路素
    子と基板間を圧着することにより、金属バンプを弾性変
    形させ、該金属バンプと対向する電極パッドあるいは電
    極端子を密着させた後、熱圧着して接着固定する工程と
    を含むことを特徴とする集積回路素子の接続方法。
  2. 【請求項2】 前記活性エネルギー線により硬化性を有
    する樹脂は、同時に熱硬化性をも有するものであること
    を特徴とする請求項1に記載の集積回路素子の接続方
    法。
JP34233891A 1990-12-26 1991-11-30 集積回路素子の接続方法 Expired - Lifetime JP2940269B2 (ja)

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JP41428990 1990-12-26
JP2-414289 1990-12-26

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JPH0536761A JPH0536761A (ja) 1993-02-12
JP2940269B2 true JP2940269B2 (ja) 1999-08-25

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WO2021179185A1 (zh) * 2020-03-10 2021-09-16 华为技术有限公司 芯片堆叠结构、制作方法及电子设备

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DE69125128D1 (de) 1997-04-17
DE69125128T2 (de) 1997-06-19
EP0493131B1 (en) 1997-03-12
JPH0536761A (ja) 1993-02-12
EP0493131A1 (en) 1992-07-01
US5384952A (en) 1995-01-31

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