KR970705180A - 반도체장치(semiconductor device) - Google Patents

반도체장치(semiconductor device) Download PDF

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KR970705180A
KR970705180A KR1019970700116A KR19970700116A KR970705180A KR 970705180 A KR970705180 A KR 970705180A KR 1019970700116 A KR1019970700116 A KR 1019970700116A KR 19970700116 A KR19970700116 A KR 19970700116A KR 970705180 A KR970705180 A KR 970705180A
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island
semiconductor device
semiconductor element
wire
semiconductor
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KR1019970700116A
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KR100370550B1 (ko
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마사시 사노
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사토 켄이치로
로무 가부시키가이샤
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Abstract

일단에 아일랜드(1a)를 갖는 리이드단자(1)와 하면이 상기한 아일랜드(1a)에 접속된 반도체소자(3)와 이 반도체소자(3)의 상면과 일랜드(1a)를 접속하는 적어도 1개이상의 와이어(4)와, 반도체소자(3) 및 와이어(4)를 밀봉하는 수지밀봉부(5)를 갖는 반도체장치이다.
상기한 아일랜드(1a)는 그 반도체소자(3)를 장착하는 부분과 그 와이어(4)와의 접속부분과의 사이에 절단부(1b)가 형성되어 있다.

Description

반도체장치(SEMICONDUCTOR DEVICE).
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 반도체장치로서의 수광장치를 나타내는 일부절단평면도.

Claims (6)

  1. 일단에 아일랜드(1a)를 갖는 리이드단자(1)와, 하면이 상기한 아일랜드(1a)에 장착된 반도체소자(3)와, 이반도체소자(3)의 상면과 아일랜드(1a)를 접속하는 적어도 1개이상의 와이어(4)와, 반도체소자(3) 및 와이어(4)를 밀봉하는 수지밀봉부(5)를 갖는 반도체장치에 있어서, 상기한 아일랜드(1a)는 그 반도체소자(3)를 장착하는 부분과, 그 와이어(4)와의 접속부분과의 사이에 절단부(1b)가 형성되어 있는 것을 특징으로 하는 반도체장치.
  2. 제1항에 있어서, 절단부(1b)가 모든 와이어(4)의 아래쪽을 통과해서 뻗어 형성되어 있는 것을 특징으로 하는 반도체장치.
  3. 제1항에 있어서, 상기한 수지가 에폭시수지인 것을 특징으로 하는 반도체장치.
  4. 제1항에 있어서, 절단부(1b)가 4각형상의 반도체소자(3)의 한변에 따라 형성되어 있는 것, 및 일단이 반도체소자(3)에 접속된 복수의 와이어(4)가 절단부(1b)를 교차하는 형태로 아일랜드(1a)상면에 스티치본딩되어 있는 것을 특징으로 하는 반도체장치.
  5. 제4항에 있어서, 절단부(1b)가 아일랜드(1a)의 폭의 대략 80%의 길이로 형성되어 있는 것을 특징으로 하는 반도체장치.
  6. 일단에 아일랜드(1a)를 갖는 리이드단자(1)와 하면이 상기한 아일랜드(1a)에 장착된 반도체소자(3)와, 이반도체소자(3)의 상면과 아일랜드(1a)를 접속하는 적어도 1개이상의 와이어(4)와, 반도체소자(3) 및 와이어(4)를 밀봉하는 수지밀봉부(50를 갖는 반도체장치에 있어서, 상기한 아일랜드(1a)는 그 반도체소자(3)를 장착하는 부분과, 그 와이어(4)와의 접속부분과의 사이에 관통구멍(6)이 형성되어 있는 것을 특징으로 하는 반도체장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019970700116A 1995-05-11 1996-05-10 반도체장치 KR100370550B1 (ko)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP95-113303 1995-05-11
JP113303 1995-05-11
JP11330395 1995-05-11
JP96-105725 1996-04-25
JP10572596A JP3907743B2 (ja) 1995-05-11 1996-04-25 半導体装置
JP105725 1996-04-25

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KR970705180A true KR970705180A (ko) 1997-09-06
KR100370550B1 KR100370550B1 (ko) 2003-07-18

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US (1) US6242801B1 (ko)
EP (1) EP0771027B1 (ko)
JP (1) JP3907743B2 (ko)
KR (1) KR100370550B1 (ko)
CN (1) CN1134073C (ko)
DE (1) DE69635334T2 (ko)
TW (1) TW301046B (ko)
WO (1) WO1996036074A1 (ko)

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JP4198284B2 (ja) * 1999-10-07 2008-12-17 ローム株式会社 面実装用光半導体装置
JP2002353383A (ja) * 2001-05-30 2002-12-06 Moric Co Ltd 半導体装置
JP3913574B2 (ja) * 2002-02-27 2007-05-09 三洋電機株式会社 半導体装置

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EP0771027A4 (en) 2000-01-05
KR100370550B1 (ko) 2003-07-18
CN1154180A (zh) 1997-07-09
EP0771027B1 (en) 2005-10-26
JPH0927577A (ja) 1997-01-28
DE69635334D1 (de) 2005-12-01
EP0771027A1 (en) 1997-05-02
JP3907743B2 (ja) 2007-04-18
DE69635334T2 (de) 2006-07-20
WO1996036074A1 (fr) 1996-11-14
CN1134073C (zh) 2004-01-07
TW301046B (ko) 1997-03-21
US6242801B1 (en) 2001-06-05

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