KR890013750A - 반도체 장치 - Google Patents

반도체 장치 Download PDF

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Publication number
KR890013750A
KR890013750A KR1019890001518A KR890001518A KR890013750A KR 890013750 A KR890013750 A KR 890013750A KR 1019890001518 A KR1019890001518 A KR 1019890001518A KR 890001518 A KR890001518 A KR 890001518A KR 890013750 A KR890013750 A KR 890013750A
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KR
South Korea
Prior art keywords
semiconductor device
conductors
wiring
substrate
tungsten
Prior art date
Application number
KR1019890001518A
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English (en)
Inventor
지요시 가마따
Original Assignee
미다 가쓰시게
가부시끼가이샤 히다찌세이사꾸쇼
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Publication date
Priority claimed from JP63041995A external-priority patent/JPH01218103A/ja
Priority claimed from JP63061626A external-priority patent/JPH01233744A/ja
Application filed by 미다 가쓰시게, 가부시끼가이샤 히다찌세이사꾸쇼 filed Critical 미다 가쓰시게
Publication of KR890013750A publication Critical patent/KR890013750A/ko

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Abstract

내용 없음.

Description

반도체 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 실시예 I의 반도체 장치의 단면도.
제2도는 제1도에 도시한 반도체 장치를 II-II선에서 본 평면도.
제3도는 제2도에 도시한 반도체 장치의 점선으로 둘러싼 부분 III의 확대평면도.

Claims (11)

  1. 주면에 회로 및 외부단자(13)이 형성된 반도체칩(1), 상기 반도체칩(1)이 탑재되는 영역에 금속막(2)가 형성되어 있는 기판(100), 상기 외부단자와 기판(100)에 형성된 여러개의 도체를 전기적으로 접속하기 위한 여러개의 와이어(3), 상기 기판내에 위치하고 상기 반도체칩의 주면과 수직인 방향으로 연장해 있고 그 상단이 상기 도체와 접속되어 있는 여러개의 배선도체(5), 상기 배선도체를 둘러싸도록 기판내에 형성되어 있는 다른 여러개의 배선도체(6,7), 상기 반도체칩(1), 와이어(3), 금속막(9), 도체를 봉하여 막기 위한 금속 캡(8)로 이루어지는 반도체 장치.
  2. 특허청구의 범위 제1항에 있어서, 상기 금속캡(8)은 중앙부가 그 주변부보다 두꺼운 반도체 장치.
  3. 특허청구의 범위 제1항에 있어서, 상기 금속막(9)는 텅스텐(W)막 위에 니켈(Ni) 및 금(Au)을 도금하여 형성된 것인 반도체 장치.
  4. 특허청구의 범위 제1항에 있어서, 상기 여러개의 도체는 텅스텐(W)막으로 되는 반도체 장치.
  5. 특허청구의 범위 제1항에 있어서, 상기 배선도체는 주로 텅스텐(W)으로 되는 반도체 장치.
  6. 특허청구의 범위 제1항에 있어서, 상기 배선도체 중 적어도 1개가 상기 기판의 바깥쪽에 형성되어 있는 반도체 장치.
  7. 특허청구의 범위 제1항에 있어서, 상기 배선도체는 원주형상인 반도체 장치.
  8. 특허청구의 범위 제1항에 있어서, 또 상기 배선도체, 이것을 둘러싸도록 형성되어 있는 여러개의 다른 상기 배선도체, 상기 금속막의 일부는 평행하게 연장되어 있는 반도체 장치.
  9. 특허청구의 범위 제1항에 있어서, 또 상기 도체에 세비세프형 필터가 부설된 반도체 장치.
  10. 특허청구의 범위 제9항에 있어서, 또 상기 체비세프형 필터위에 와이어가 부설된 반도체 장치.
  11. 특허청구의 범위 제9항에 있어서, 상기 체비세프형 필터는 텅스텐막으로 되는 반도체 장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019890001518A 1988-02-26 1989-02-10 반도체 장치 KR890013750A (ko)

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Application Number Priority Date Filing Date Title
JP63-41995 1988-02-26
JP63041995A JPH01218103A (ja) 1988-02-26 1988-02-26 マイクロ波伝送用半導体パッケージ
JP63061626A JPH01233744A (ja) 1988-03-14 1988-03-14 半導体装置
JP63-61626 1988-03-14

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US5254871A (en) * 1988-11-08 1993-10-19 Bull, S.A. Very large scale integrated circuit package, integrated circuit carrier and resultant interconnection board
GB2233821A (en) * 1989-07-11 1991-01-16 Oxley Dev Co Ltd Ceramic package including a semiconductor chip
DE4134753A1 (de) * 1991-10-22 1993-04-29 Aeg Mobile Communication Breitbandige hochfrequenz-schaltungsanordnung
KR100306988B1 (ko) * 1992-10-26 2001-12-15 윌리엄 비. 켐플러 장치패키지
US5338970A (en) * 1993-03-24 1994-08-16 Intergraph Corporation Multi-layered integrated circuit package with improved high frequency performance
JPH0846073A (ja) * 1994-07-28 1996-02-16 Mitsubishi Electric Corp 半導体装置
WO1996027282A1 (en) * 1995-03-02 1996-09-06 Circuit Components Incorporated A low cost, high performance package for microwave circuits in the up to 90 ghz frequency range using bga i/o rf port format and ceramic substrate technology
FR2747235B1 (fr) * 1996-04-03 1998-07-10 Bull Sa Boitier de circuit integre
US6507110B1 (en) * 2000-03-08 2003-01-14 Teledyne Technologies Incorporated Microwave device and method for making same
US6933596B2 (en) * 2003-07-01 2005-08-23 Northrop Grumman Corporation Ultra wideband BGA
US7656236B2 (en) 2007-05-15 2010-02-02 Teledyne Wireless, Llc Noise canceling technique for frequency synthesizer
US8179045B2 (en) 2008-04-22 2012-05-15 Teledyne Wireless, Llc Slow wave structure having offset projections comprised of a metal-dielectric composite stack
CN102201379B (zh) * 2011-05-16 2013-07-17 济南晶恒电子有限责任公司 器件封装结构及其封装方法
US9202660B2 (en) 2013-03-13 2015-12-01 Teledyne Wireless, Llc Asymmetrical slow wave structures to eliminate backward wave oscillations in wideband traveling wave tubes
CN113192914A (zh) * 2021-03-09 2021-07-30 西安电子科技大学昆山创新研究院 一种具有自阻匹配的三维介质腔tsv互连结构

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KR900008995B1 (ko) * 1986-12-19 1990-12-17 페어차일드 세미콘덕터 코포레이션 고주파 반도체 소자용 세라믹 패키지

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