CN1154180A - 半导体器件 - Google Patents

半导体器件 Download PDF

Info

Publication number
CN1154180A
CN1154180A CN96190481A CN96190481A CN1154180A CN 1154180 A CN1154180 A CN 1154180A CN 96190481 A CN96190481 A CN 96190481A CN 96190481 A CN96190481 A CN 96190481A CN 1154180 A CN1154180 A CN 1154180A
Authority
CN
China
Prior art keywords
island
semiconductor element
metal wire
semiconductor device
groove
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN96190481A
Other languages
English (en)
Other versions
CN1134073C (zh
Inventor
佐野正志
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Publication of CN1154180A publication Critical patent/CN1154180A/zh
Application granted granted Critical
Publication of CN1134073C publication Critical patent/CN1134073C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495Lead-frames or other flat leads
    • H01L23/49503Lead-frames or other flat leads characterised by the die pad
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495Lead-frames or other flat leads
    • H01L23/49541Geometry of the lead-frame
    • H01L23/49562Geometry of the lead-frame for devices being provided for in H01L29/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/48463Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/4911Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49111Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01005Boron [B]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01006Carbon [C]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01013Aluminum [Al]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01079Gold [Au]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/12Passive devices, e.g. 2 terminal devices
    • H01L2924/1204Optical Diode
    • H01L2924/12043Photo diode
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Light Receiving Elements (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Lead Frames For Integrated Circuits (AREA)

Abstract

一种半导体器件,包括:一端有岛的导线,底表面安装在岛上的半导体元件,一条或多条连接半导体元件顶平面到岛的金属线,以及密封半导体元件和金属线的树脂密封盒。其中,在所述岛中,在安装所述半导体元件部分与所述金属线键合部分之间形成槽。

Description

半导体器件
本发明涉及一种在岛上固定有半导体元件的半导体器件,尤其涉及一种具有特定形状的岛的半导体器件。
通常,半导体器件具有如下所述的结构。这里,以一种具有如光电二极管的半导体元件的光电探测器为例。
如图4所示,光电探测器包括:一端有近似方形的岛31a的公共导线31,形成在公共导线31两侧并近似与之平行的专用引线32和33,在岛31a上模片键合的半导体元件34,多条由金或其它金属制成,通过导线键合方式,用于把半导体元件34电连接到岛31a顶表面以及电连接到专用引线32和33的金属线35,以及近似方形的由环氧树脂制成的,用于密封半导体元件34和金属线35的树脂密封盒36(该树脂密封盒36尽管在图4中透明,但实际上它是不透明的)。在以上半导体元件34的顶平面上制成多个凸形的铝或其它金属电极压焊块(没有表示出来)。在这些电极压焊块上键合有金属线35,其中的四根金属线在一端上与岛31a的顶平面键合,另两根金属线分别在另一端上与导线32和33键合。前四根金属线与岛31a电连接到地,这样可用于调整影响专用引线32与33之间电流的电阻值。
树脂密封盒36用一种树脂形成模具(没有显示)制成如图5所示以密封半导体元件34和金属线35。该树脂密封盒36在大约半导体器件34的正上方部分有一用于从外界向半导体元件34传送光线的半球形聚光透镜37。
然而,该光电探测器有下列问题。
上面的树脂密封盒36被加热以密封半导体元件34和金属线35,此后,当树脂密封盒36冷却时,会产生内部收缩应力。这使得金属线35和制作树脂密封盒36的树脂一起沿着树脂内部的收缩方向拉伸。另一方面,一端与金属线35以针脚式键合的岛31a的收缩远小于树脂密封盒36的收缩,这是由于它们具有不同的热膨胀系数。
结果,金属线35受到沿着树脂收缩方向的拉伸力,该力使得金属线35易于从岛31a上脱落,最终如图6所示,金属线35与岛31a断裂。此外,甚至环境温度的不同也会产生以上的情况。
本发明的目的是提供一种高可靠性,真正免除金属线断裂的半导体器件。
根据本发明,在一个半导体器件里所述的岛在所述安装半导体元件的部分与所述键合金属线部分之间开一个槽。该半导体器件包括:一端有岛的导线,底平面与岛相连的半导体元件,一条或多条连接半导体元件顶平面到岛的金属线,以及密封半导体元件和金属线的树脂密封盒。
并且,根据本发明,如上述的半导体器件里,所述槽在所有金属线的下面形成并延伸。
图1为示出作为本发明的半导体器件的例子的光电探测器的部分移去的平面视图;图2为部分移去的平面视图,每一个示出了本发明的半导体器件的一个变例;图3为示出本发明半导体器件的另一个变例的部分移去的平面视图;图4为示出常规半导体器件的部分移去的平面视图;图5是一常规半导体器件的主要部分的透视图;图6表示出常规半导体器件中金属线断裂的状态。
下面将参照图1和图2描述本发明的一个实施方式。在以下描述中,一个具有包含光电二极管的半导体元件(以后半导体元件指光电二极管元件)的光电探测器被作为本发明的半导体器件的例子处理。然而这并不意味着本发明的应用仅限于半导体器件的特定类型。
如图1所示,该半导体器件包括:在一端有近似方形岛1a的公共导线1(导线端子),在公共导线1两侧并与之近似平行地形成的专用引线2a和2b,在岛1a上模片键合的光电二极管元件3,多条由金或其它金属制成,通过导线键合方式,用于把光电二极管元件3电连接到岛1a顶表面以及电连接到专用引线2a和2b的金属线4,以及近似方形的由环氧树脂制成的,用于密封光电二极管元件3和金属线4的树脂密封盒5(该树脂密封盒5尽管在图1中透明,但实际上它是不透明的)。
在岛1a里,在安装光电二极管元件3的部分与键合金属线4的部分之间作一槽1b。该槽沿着光电二极管元件3的一侧形成(图中金属线4针脚式键合的一侧)。槽1b的长A约为1.9mm,岛的宽度B约为2.3mm。因此,槽1b的长A约为岛的宽度B的80%。槽1b的宽度C约为0.4mm,此外,在光电二极管元件3的顶平面,制作了六个铝电极压焊块,(压焊块未画出),并且,在这些电极压焊块上,金属线4在一端独立地键合。在这些金属线4中,四根金属线跨过槽1b以针脚式键合到另一端的岛1a的顶平面上,两根金属线各自以针脚式键合到另一端的专用引线2a和2b。
在具有上述结构的光电探测器件中,树脂密封盒5是通过环氧树脂热凝形成,它与前面图5所描述的使用常规树脂成形工艺制备的形状相同。
尤其是,例如,树脂密封盒5是这样制成的,通过向光电二极管元件3和金属线4浇注热溶的环氧树脂,然后冷却树脂到室温。
然而,热处理后,随着环氧树脂的冷却,树脂内部的收缩应力加大。这样使得金属线4和环氧树脂一样受到沿收缩方向向内的拉力。另一方面,岛1a,由于在安装光电二极管元件3的部分,与接合金属线4的部分之间开有一个如前文所述的槽。因此,在槽1b附近,在两部分相互靠近或远离的方向(如图1中箭头所示)易于产生形变。于是,岛1a使槽1b周围的部分易于随环氧树脂的内部收缩而产生形变。
结果,当金属线4被拉伸时,在它们与岛1a的键合端,沿着环氧树脂收缩方向,岛1a也被沿环氧树脂收缩的方向牵引。这样,金属线在它们与岛1a的键合端断裂的可能性显著减少。
在这种实施方式中,槽1b是在所有金属线4下面形成并延伸,这样可使得岛1a能沿着槽1b周围的两部分的互相靠近或远离的方向易于形变。相应的,岛1a使得槽1b周围的部分(包括与金属线4键合部分)容易随树脂的收缩而形变。结果,金属线断裂的可能性显著减小。
在这种实施方式中,如图1所示,槽1b是沿着方形光电二极管元件3的一边形成的,这样可以使其与该边平行。然而,这并不意味着对槽1b的形成方式有任何限制。图2(a)显示了与图1所示基本一样的槽的图形,(b)到(e)显示了实现本发明目的的另外的槽的图形,简言之,只要金属线4跨过它,槽就可以以任何形状在任何位置制成。而且,尽管在以上的实施方式中,有四根金属线4跨过槽1b,本发明也可以不变地应用到一根或多根金属线的半导体器件中。
此外,槽1b的宽和长并不局限于如上实施方式所示的特定值,并且可能制作多个槽1b。
而且,尽管如以上实施方式槽1b做成一端开口,即象一凹槽,但也可以做成没有开口端,即象如图3所示的穿孔(through hole)6。然而,在这样的情况下,为了达到本发明的目的,要求穿孔6要足够大以使得岛能容易地随环氧树脂的收缩而形变。特别地,穿孔6的直径(或如果孔被拉长,则为孔的主长)需要接近岛的宽。当然,也可能制作多个这种穿孔6。
另外,尽管在上面实施方式中,以光电二极管器件作为半导体器件的例子,这并不意味着本发明的应用仅限于半导体器件的特定类型。
根据本发明,在一个半导体器件中,岛具有一在安装半导体元件部分与金属线键合部分之间形成的槽。这具有以下优点。
例如半导体器件是通过向半导体元件和金属线浇注热溶的热凝树脂以把它们密封在一密封盒里而制成的。这些树脂,由于处理后的冷却,在内部产生收缩应力。这使得金属线和树脂一样受到沿收缩方向向内的拉力。另一方面,如前所述,岛上有在安装半导体元件部分与金属线键合部分之间形成的槽,以使得岛在槽附近沿两部分之间相互靠近或远离的方向上易于形变,因此,该岛使槽周围的部分随树脂的内部收缩而易于形变。
结果,当金属线被拉伸时,在它们与岛的键合端,沿着环氧树脂的收缩方向,岛1a也沿环氧树脂收缩方向被拉伸。这样,金属线在它们与岛1a的键合端断裂的可能性显著减少。
如前所述,本发明能有利于应用到包括一光电二极管元件或任何其它类型的半导体元件的半导体器件中,它特别适合那种使用树脂成形封装半导体元件、引出端及连线的半导体器件。

Claims (6)

1.一种半导体器件,包括:在一端有岛的导线,底表面安装在岛上的半导体元件,一条或多条连接半导体元件顶平面到岛的金属线,以及密封半导体元件和金属线的树脂密封盒。
其中,所述岛具有在安装所述半导体元件部分与所述金属线键合部分之间形成的槽。
2.权利要求1所述的半导体器件,其中,所述槽在所有金属线的下面形成并延伸。
3.权利要求1所述的半导体器件,其中,所述树脂是环氧树脂。
4.权利要求1所述的半导体器件,其中,所述半导体元件是方形,所述槽沿半导体元件的一侧形成,并且其中一端连接到所述半导体元件的所述金属线以针脚式键合到所述岛的顶平面以使得这些金属线跨过该槽。
5.权利要求4所述的半导体器件,其中,所述槽形成为长约等于所述岛的宽度的80%。
6.一种半导体器件,包括:一端有岛的导线,底表面安装在岛上的半导体元件,一条或多条连接半导体元件顶平面到岛的金属线,以及密封半导体元件和金属线的树脂密封盒,
其中,所述岛具有在安装所述半导体元件部分与所述金属线键合部分之间形成的穿孔。
CNB96190481XA 1995-05-11 1996-05-10 半导体器件 Expired - Fee Related CN1134073C (zh)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP11330395 1995-05-11
JP113303/1995 1995-05-11
JP113303/95 1995-05-11
JP105725/96 1996-04-25
JP10572596A JP3907743B2 (ja) 1995-05-11 1996-04-25 半導体装置
JP105725/1996 1996-04-25

Publications (2)

Publication Number Publication Date
CN1154180A true CN1154180A (zh) 1997-07-09
CN1134073C CN1134073C (zh) 2004-01-07

Family

ID=26445967

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB96190481XA Expired - Fee Related CN1134073C (zh) 1995-05-11 1996-05-10 半导体器件

Country Status (8)

Country Link
US (1) US6242801B1 (zh)
EP (1) EP0771027B1 (zh)
JP (1) JP3907743B2 (zh)
KR (1) KR100370550B1 (zh)
CN (1) CN1134073C (zh)
DE (1) DE69635334T2 (zh)
TW (1) TW301046B (zh)
WO (1) WO1996036074A1 (zh)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4198284B2 (ja) * 1999-10-07 2008-12-17 ローム株式会社 面実装用光半導体装置
JP2002353383A (ja) * 2001-05-30 2002-12-06 Moric Co Ltd 半導体装置
JP3913574B2 (ja) * 2002-02-27 2007-05-09 三洋電機株式会社 半導体装置

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52129379A (en) * 1976-04-23 1977-10-29 Hitachi Ltd Plastic molded semiconductor device
JPS55120152A (en) 1979-03-09 1980-09-16 Fujitsu Ltd Semiconductor device
JPS57154863A (en) * 1981-03-19 1982-09-24 Fujitsu Ltd Manufacture of resin sealing type electronic parts
JPS6234154A (ja) 1985-08-08 1987-02-14 Oji Paper Co Ltd 写真印画紙用支持体
JPH06101579B2 (ja) * 1986-08-22 1994-12-12 松下電工株式会社 フオトカプラの製法
JPH0625978B2 (ja) 1987-11-09 1994-04-06 日本電気株式会社 相互監視制御方式
JPH01123356U (zh) * 1988-02-16 1989-08-22
JPH01312858A (ja) * 1988-06-10 1989-12-18 Nec Corp 樹脂封止型半導体装置
JPH02191378A (ja) * 1988-10-25 1990-07-27 Omron Tateisi Electron Co 光電素子、光電素子の製造方法及び光電素子駆動装置
JPH02159750A (ja) * 1988-12-13 1990-06-19 Nec Corp 半導体装置の製造方法
JPH04280664A (ja) * 1990-10-18 1992-10-06 Texas Instr Inc <Ti> 半導体装置用リードフレーム
JPH04262560A (ja) * 1991-02-18 1992-09-17 Mitsubishi Electric Corp 樹脂封止電界効果型半導体装置およびその製造方法
JPH05109959A (ja) * 1991-10-17 1993-04-30 Nec Corp 半導体装置の製造方法
JP3167769B2 (ja) * 1992-01-16 2001-05-21 シャープ株式会社 リードフレームおよびこれを利用した光学装置の製造方法
JP2708320B2 (ja) * 1992-04-17 1998-02-04 三菱電機株式会社 マルチチップ型半導体装置及びその製造方法
JP2805563B2 (ja) * 1992-08-07 1998-09-30 シャープ株式会社 反射型光結合装置およびその製造方法
JP2695736B2 (ja) * 1992-12-11 1998-01-14 三菱電機株式会社 樹脂封止型半導体装置及びその抵抗線を備えたリードフレームの製造方法
JPH06216307A (ja) * 1993-01-13 1994-08-05 Mitsubishi Electric Corp 樹脂封止型半導体装置
JPH06244430A (ja) * 1993-02-16 1994-09-02 Fuji Electric Co Ltd 半導体装置
JP2500785B2 (ja) * 1993-09-20 1996-05-29 日本電気株式会社 半導体パッケ―ジ用フィルムキャリアテ−プ及びこれを用いた半導体装置
JP2701712B2 (ja) * 1993-11-11 1998-01-21 日本電気株式会社 半導体装置
JPH08139113A (ja) * 1994-11-09 1996-05-31 Mitsubishi Electric Corp 樹脂封止型半導体装置
US5491360A (en) * 1994-12-28 1996-02-13 National Semiconductor Corporation Electronic package for isolated circuits
JP3429921B2 (ja) * 1995-10-26 2003-07-28 三菱電機株式会社 半導体装置

Also Published As

Publication number Publication date
WO1996036074A1 (fr) 1996-11-14
EP0771027B1 (en) 2005-10-26
JPH0927577A (ja) 1997-01-28
KR100370550B1 (ko) 2003-07-18
EP0771027A4 (en) 2000-01-05
CN1134073C (zh) 2004-01-07
US6242801B1 (en) 2001-06-05
DE69635334D1 (de) 2005-12-01
JP3907743B2 (ja) 2007-04-18
TW301046B (zh) 1997-03-21
DE69635334T2 (de) 2006-07-20
EP0771027A1 (en) 1997-05-02
KR970705180A (ko) 1997-09-06

Similar Documents

Publication Publication Date Title
CN1085408C (zh) 半导体封装及引线框架
CN1160802C (zh) 辐射发送和/或接收元件
CN1104741C (zh) 半导体封装及其制造方法
CN1187039A (zh) 底部引线框及利用该引线框的底部引线半导体封装
CN1153997A (zh) 改进的减小尺寸的集成芯片封装
CN1124644C (zh) 半导体器件及其制造方法、电路基板和薄膜载带
CN104737307A (zh) 用于制造多个光电子半导体构件的方法
CN101030564A (zh) 多排引线框
CN1527371A (zh) 光电子元件与用于制造的方法
CN1799149A (zh) 用于辐射元件的外壳及其加工方法和辐射元件
CN1946504A (zh) 低回路导线邦定的系统和方法
US5712570A (en) Method for checking a wire bond of a semiconductor package
US7508055B2 (en) High heat release semiconductor and method for manufacturing the same
CN1127139C (zh) 与半导体芯片相配合的封装的制造方法
CN1288747C (zh) 半导体芯片焊接用台阶状图案
CN1134073C (zh) 半导体器件
US4298769A (en) Hermetic plastic dual-in-line package for a semiconductor integrated circuit
CN1168537A (zh) 具有高输入/输出连接的半导体集成电路器件
CN1126399A (zh) 光传感器
KR200493123Y1 (ko) 발광 소자 패키지
CN1874010A (zh) 一种低热阻的发光二极管封装装置
CN1059053C (zh) 侧面有凸缘的密封式半导体器件及其制造方法
CN1574332A (zh) 功率半导体器件
CN1666333A (zh) 可穿戴的硅芯片
US20040075101A1 (en) Semiconductor light-emitting device and method for manufacturing the device

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20040107

Termination date: 20140510