CN1154180A - 半导体器件 - Google Patents
半导体器件 Download PDFInfo
- Publication number
- CN1154180A CN1154180A CN96190481A CN96190481A CN1154180A CN 1154180 A CN1154180 A CN 1154180A CN 96190481 A CN96190481 A CN 96190481A CN 96190481 A CN96190481 A CN 96190481A CN 1154180 A CN1154180 A CN 1154180A
- Authority
- CN
- China
- Prior art keywords
- island
- semiconductor element
- metal wire
- semiconductor device
- groove
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49503—Lead-frames or other flat leads characterised by the die pad
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
- H01L23/49562—Geometry of the lead-frame for devices being provided for in H01L29/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12043—Photo diode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Light Receiving Elements (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Lead Frames For Integrated Circuits (AREA)
Abstract
一种半导体器件,包括:一端有岛的导线,底表面安装在岛上的半导体元件,一条或多条连接半导体元件顶平面到岛的金属线,以及密封半导体元件和金属线的树脂密封盒。其中,在所述岛中,在安装所述半导体元件部分与所述金属线键合部分之间形成槽。
Description
本发明涉及一种在岛上固定有半导体元件的半导体器件,尤其涉及一种具有特定形状的岛的半导体器件。
通常,半导体器件具有如下所述的结构。这里,以一种具有如光电二极管的半导体元件的光电探测器为例。
如图4所示,光电探测器包括:一端有近似方形的岛31a的公共导线31,形成在公共导线31两侧并近似与之平行的专用引线32和33,在岛31a上模片键合的半导体元件34,多条由金或其它金属制成,通过导线键合方式,用于把半导体元件34电连接到岛31a顶表面以及电连接到专用引线32和33的金属线35,以及近似方形的由环氧树脂制成的,用于密封半导体元件34和金属线35的树脂密封盒36(该树脂密封盒36尽管在图4中透明,但实际上它是不透明的)。在以上半导体元件34的顶平面上制成多个凸形的铝或其它金属电极压焊块(没有表示出来)。在这些电极压焊块上键合有金属线35,其中的四根金属线在一端上与岛31a的顶平面键合,另两根金属线分别在另一端上与导线32和33键合。前四根金属线与岛31a电连接到地,这样可用于调整影响专用引线32与33之间电流的电阻值。
树脂密封盒36用一种树脂形成模具(没有显示)制成如图5所示以密封半导体元件34和金属线35。该树脂密封盒36在大约半导体器件34的正上方部分有一用于从外界向半导体元件34传送光线的半球形聚光透镜37。
然而,该光电探测器有下列问题。
上面的树脂密封盒36被加热以密封半导体元件34和金属线35,此后,当树脂密封盒36冷却时,会产生内部收缩应力。这使得金属线35和制作树脂密封盒36的树脂一起沿着树脂内部的收缩方向拉伸。另一方面,一端与金属线35以针脚式键合的岛31a的收缩远小于树脂密封盒36的收缩,这是由于它们具有不同的热膨胀系数。
结果,金属线35受到沿着树脂收缩方向的拉伸力,该力使得金属线35易于从岛31a上脱落,最终如图6所示,金属线35与岛31a断裂。此外,甚至环境温度的不同也会产生以上的情况。
本发明的目的是提供一种高可靠性,真正免除金属线断裂的半导体器件。
根据本发明,在一个半导体器件里所述的岛在所述安装半导体元件的部分与所述键合金属线部分之间开一个槽。该半导体器件包括:一端有岛的导线,底平面与岛相连的半导体元件,一条或多条连接半导体元件顶平面到岛的金属线,以及密封半导体元件和金属线的树脂密封盒。
并且,根据本发明,如上述的半导体器件里,所述槽在所有金属线的下面形成并延伸。
图1为示出作为本发明的半导体器件的例子的光电探测器的部分移去的平面视图;图2为部分移去的平面视图,每一个示出了本发明的半导体器件的一个变例;图3为示出本发明半导体器件的另一个变例的部分移去的平面视图;图4为示出常规半导体器件的部分移去的平面视图;图5是一常规半导体器件的主要部分的透视图;图6表示出常规半导体器件中金属线断裂的状态。
下面将参照图1和图2描述本发明的一个实施方式。在以下描述中,一个具有包含光电二极管的半导体元件(以后半导体元件指光电二极管元件)的光电探测器被作为本发明的半导体器件的例子处理。然而这并不意味着本发明的应用仅限于半导体器件的特定类型。
如图1所示,该半导体器件包括:在一端有近似方形岛1a的公共导线1(导线端子),在公共导线1两侧并与之近似平行地形成的专用引线2a和2b,在岛1a上模片键合的光电二极管元件3,多条由金或其它金属制成,通过导线键合方式,用于把光电二极管元件3电连接到岛1a顶表面以及电连接到专用引线2a和2b的金属线4,以及近似方形的由环氧树脂制成的,用于密封光电二极管元件3和金属线4的树脂密封盒5(该树脂密封盒5尽管在图1中透明,但实际上它是不透明的)。
在岛1a里,在安装光电二极管元件3的部分与键合金属线4的部分之间作一槽1b。该槽沿着光电二极管元件3的一侧形成(图中金属线4针脚式键合的一侧)。槽1b的长A约为1.9mm,岛的宽度B约为2.3mm。因此,槽1b的长A约为岛的宽度B的80%。槽1b的宽度C约为0.4mm,此外,在光电二极管元件3的顶平面,制作了六个铝电极压焊块,(压焊块未画出),并且,在这些电极压焊块上,金属线4在一端独立地键合。在这些金属线4中,四根金属线跨过槽1b以针脚式键合到另一端的岛1a的顶平面上,两根金属线各自以针脚式键合到另一端的专用引线2a和2b。
在具有上述结构的光电探测器件中,树脂密封盒5是通过环氧树脂热凝形成,它与前面图5所描述的使用常规树脂成形工艺制备的形状相同。
尤其是,例如,树脂密封盒5是这样制成的,通过向光电二极管元件3和金属线4浇注热溶的环氧树脂,然后冷却树脂到室温。
然而,热处理后,随着环氧树脂的冷却,树脂内部的收缩应力加大。这样使得金属线4和环氧树脂一样受到沿收缩方向向内的拉力。另一方面,岛1a,由于在安装光电二极管元件3的部分,与接合金属线4的部分之间开有一个如前文所述的槽。因此,在槽1b附近,在两部分相互靠近或远离的方向(如图1中箭头所示)易于产生形变。于是,岛1a使槽1b周围的部分易于随环氧树脂的内部收缩而产生形变。
结果,当金属线4被拉伸时,在它们与岛1a的键合端,沿着环氧树脂收缩方向,岛1a也被沿环氧树脂收缩的方向牵引。这样,金属线在它们与岛1a的键合端断裂的可能性显著减少。
在这种实施方式中,槽1b是在所有金属线4下面形成并延伸,这样可使得岛1a能沿着槽1b周围的两部分的互相靠近或远离的方向易于形变。相应的,岛1a使得槽1b周围的部分(包括与金属线4键合部分)容易随树脂的收缩而形变。结果,金属线断裂的可能性显著减小。
在这种实施方式中,如图1所示,槽1b是沿着方形光电二极管元件3的一边形成的,这样可以使其与该边平行。然而,这并不意味着对槽1b的形成方式有任何限制。图2(a)显示了与图1所示基本一样的槽的图形,(b)到(e)显示了实现本发明目的的另外的槽的图形,简言之,只要金属线4跨过它,槽就可以以任何形状在任何位置制成。而且,尽管在以上的实施方式中,有四根金属线4跨过槽1b,本发明也可以不变地应用到一根或多根金属线的半导体器件中。
此外,槽1b的宽和长并不局限于如上实施方式所示的特定值,并且可能制作多个槽1b。
而且,尽管如以上实施方式槽1b做成一端开口,即象一凹槽,但也可以做成没有开口端,即象如图3所示的穿孔(through hole)6。然而,在这样的情况下,为了达到本发明的目的,要求穿孔6要足够大以使得岛能容易地随环氧树脂的收缩而形变。特别地,穿孔6的直径(或如果孔被拉长,则为孔的主长)需要接近岛的宽。当然,也可能制作多个这种穿孔6。
另外,尽管在上面实施方式中,以光电二极管器件作为半导体器件的例子,这并不意味着本发明的应用仅限于半导体器件的特定类型。
根据本发明,在一个半导体器件中,岛具有一在安装半导体元件部分与金属线键合部分之间形成的槽。这具有以下优点。
例如半导体器件是通过向半导体元件和金属线浇注热溶的热凝树脂以把它们密封在一密封盒里而制成的。这些树脂,由于处理后的冷却,在内部产生收缩应力。这使得金属线和树脂一样受到沿收缩方向向内的拉力。另一方面,如前所述,岛上有在安装半导体元件部分与金属线键合部分之间形成的槽,以使得岛在槽附近沿两部分之间相互靠近或远离的方向上易于形变,因此,该岛使槽周围的部分随树脂的内部收缩而易于形变。
结果,当金属线被拉伸时,在它们与岛的键合端,沿着环氧树脂的收缩方向,岛1a也沿环氧树脂收缩方向被拉伸。这样,金属线在它们与岛1a的键合端断裂的可能性显著减少。
如前所述,本发明能有利于应用到包括一光电二极管元件或任何其它类型的半导体元件的半导体器件中,它特别适合那种使用树脂成形封装半导体元件、引出端及连线的半导体器件。
Claims (6)
1.一种半导体器件,包括:在一端有岛的导线,底表面安装在岛上的半导体元件,一条或多条连接半导体元件顶平面到岛的金属线,以及密封半导体元件和金属线的树脂密封盒。
其中,所述岛具有在安装所述半导体元件部分与所述金属线键合部分之间形成的槽。
2.权利要求1所述的半导体器件,其中,所述槽在所有金属线的下面形成并延伸。
3.权利要求1所述的半导体器件,其中,所述树脂是环氧树脂。
4.权利要求1所述的半导体器件,其中,所述半导体元件是方形,所述槽沿半导体元件的一侧形成,并且其中一端连接到所述半导体元件的所述金属线以针脚式键合到所述岛的顶平面以使得这些金属线跨过该槽。
5.权利要求4所述的半导体器件,其中,所述槽形成为长约等于所述岛的宽度的80%。
6.一种半导体器件,包括:一端有岛的导线,底表面安装在岛上的半导体元件,一条或多条连接半导体元件顶平面到岛的金属线,以及密封半导体元件和金属线的树脂密封盒,
其中,所述岛具有在安装所述半导体元件部分与所述金属线键合部分之间形成的穿孔。
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11330395 | 1995-05-11 | ||
JP113303/1995 | 1995-05-11 | ||
JP113303/95 | 1995-05-11 | ||
JP105725/96 | 1996-04-25 | ||
JP10572596A JP3907743B2 (ja) | 1995-05-11 | 1996-04-25 | 半導体装置 |
JP105725/1996 | 1996-04-25 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1154180A true CN1154180A (zh) | 1997-07-09 |
CN1134073C CN1134073C (zh) | 2004-01-07 |
Family
ID=26445967
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB96190481XA Expired - Fee Related CN1134073C (zh) | 1995-05-11 | 1996-05-10 | 半导体器件 |
Country Status (8)
Country | Link |
---|---|
US (1) | US6242801B1 (zh) |
EP (1) | EP0771027B1 (zh) |
JP (1) | JP3907743B2 (zh) |
KR (1) | KR100370550B1 (zh) |
CN (1) | CN1134073C (zh) |
DE (1) | DE69635334T2 (zh) |
TW (1) | TW301046B (zh) |
WO (1) | WO1996036074A1 (zh) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4198284B2 (ja) * | 1999-10-07 | 2008-12-17 | ローム株式会社 | 面実装用光半導体装置 |
JP2002353383A (ja) * | 2001-05-30 | 2002-12-06 | Moric Co Ltd | 半導体装置 |
JP3913574B2 (ja) * | 2002-02-27 | 2007-05-09 | 三洋電機株式会社 | 半導体装置 |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52129379A (en) * | 1976-04-23 | 1977-10-29 | Hitachi Ltd | Plastic molded semiconductor device |
JPS55120152A (en) | 1979-03-09 | 1980-09-16 | Fujitsu Ltd | Semiconductor device |
JPS57154863A (en) * | 1981-03-19 | 1982-09-24 | Fujitsu Ltd | Manufacture of resin sealing type electronic parts |
JPS6234154A (ja) | 1985-08-08 | 1987-02-14 | Oji Paper Co Ltd | 写真印画紙用支持体 |
JPH06101579B2 (ja) * | 1986-08-22 | 1994-12-12 | 松下電工株式会社 | フオトカプラの製法 |
JPH0625978B2 (ja) | 1987-11-09 | 1994-04-06 | 日本電気株式会社 | 相互監視制御方式 |
JPH01123356U (zh) * | 1988-02-16 | 1989-08-22 | ||
JPH01312858A (ja) * | 1988-06-10 | 1989-12-18 | Nec Corp | 樹脂封止型半導体装置 |
JPH02191378A (ja) * | 1988-10-25 | 1990-07-27 | Omron Tateisi Electron Co | 光電素子、光電素子の製造方法及び光電素子駆動装置 |
JPH02159750A (ja) * | 1988-12-13 | 1990-06-19 | Nec Corp | 半導体装置の製造方法 |
JPH04280664A (ja) * | 1990-10-18 | 1992-10-06 | Texas Instr Inc <Ti> | 半導体装置用リードフレーム |
JPH04262560A (ja) * | 1991-02-18 | 1992-09-17 | Mitsubishi Electric Corp | 樹脂封止電界効果型半導体装置およびその製造方法 |
JPH05109959A (ja) * | 1991-10-17 | 1993-04-30 | Nec Corp | 半導体装置の製造方法 |
JP3167769B2 (ja) * | 1992-01-16 | 2001-05-21 | シャープ株式会社 | リードフレームおよびこれを利用した光学装置の製造方法 |
JP2708320B2 (ja) * | 1992-04-17 | 1998-02-04 | 三菱電機株式会社 | マルチチップ型半導体装置及びその製造方法 |
JP2805563B2 (ja) * | 1992-08-07 | 1998-09-30 | シャープ株式会社 | 反射型光結合装置およびその製造方法 |
JP2695736B2 (ja) * | 1992-12-11 | 1998-01-14 | 三菱電機株式会社 | 樹脂封止型半導体装置及びその抵抗線を備えたリードフレームの製造方法 |
JPH06216307A (ja) * | 1993-01-13 | 1994-08-05 | Mitsubishi Electric Corp | 樹脂封止型半導体装置 |
JPH06244430A (ja) * | 1993-02-16 | 1994-09-02 | Fuji Electric Co Ltd | 半導体装置 |
JP2500785B2 (ja) * | 1993-09-20 | 1996-05-29 | 日本電気株式会社 | 半導体パッケ―ジ用フィルムキャリアテ−プ及びこれを用いた半導体装置 |
JP2701712B2 (ja) * | 1993-11-11 | 1998-01-21 | 日本電気株式会社 | 半導体装置 |
JPH08139113A (ja) * | 1994-11-09 | 1996-05-31 | Mitsubishi Electric Corp | 樹脂封止型半導体装置 |
US5491360A (en) * | 1994-12-28 | 1996-02-13 | National Semiconductor Corporation | Electronic package for isolated circuits |
JP3429921B2 (ja) * | 1995-10-26 | 2003-07-28 | 三菱電機株式会社 | 半導体装置 |
-
1996
- 1996-04-25 JP JP10572596A patent/JP3907743B2/ja not_active Expired - Fee Related
- 1996-05-10 CN CNB96190481XA patent/CN1134073C/zh not_active Expired - Fee Related
- 1996-05-10 US US08/750,974 patent/US6242801B1/en not_active Expired - Fee Related
- 1996-05-10 WO PCT/JP1996/001267 patent/WO1996036074A1/ja active IP Right Grant
- 1996-05-10 DE DE69635334T patent/DE69635334T2/de not_active Expired - Fee Related
- 1996-05-10 KR KR1019970700116A patent/KR100370550B1/ko not_active IP Right Cessation
- 1996-05-10 EP EP96913744A patent/EP0771027B1/en not_active Expired - Lifetime
- 1996-05-11 TW TW085105585A patent/TW301046B/zh active
Also Published As
Publication number | Publication date |
---|---|
WO1996036074A1 (fr) | 1996-11-14 |
EP0771027B1 (en) | 2005-10-26 |
JPH0927577A (ja) | 1997-01-28 |
KR100370550B1 (ko) | 2003-07-18 |
EP0771027A4 (en) | 2000-01-05 |
CN1134073C (zh) | 2004-01-07 |
US6242801B1 (en) | 2001-06-05 |
DE69635334D1 (de) | 2005-12-01 |
JP3907743B2 (ja) | 2007-04-18 |
TW301046B (zh) | 1997-03-21 |
DE69635334T2 (de) | 2006-07-20 |
EP0771027A1 (en) | 1997-05-02 |
KR970705180A (ko) | 1997-09-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1085408C (zh) | 半导体封装及引线框架 | |
CN1160802C (zh) | 辐射发送和/或接收元件 | |
CN1104741C (zh) | 半导体封装及其制造方法 | |
CN1187039A (zh) | 底部引线框及利用该引线框的底部引线半导体封装 | |
CN1153997A (zh) | 改进的减小尺寸的集成芯片封装 | |
CN1124644C (zh) | 半导体器件及其制造方法、电路基板和薄膜载带 | |
CN104737307A (zh) | 用于制造多个光电子半导体构件的方法 | |
CN101030564A (zh) | 多排引线框 | |
CN1527371A (zh) | 光电子元件与用于制造的方法 | |
CN1799149A (zh) | 用于辐射元件的外壳及其加工方法和辐射元件 | |
CN1946504A (zh) | 低回路导线邦定的系统和方法 | |
US5712570A (en) | Method for checking a wire bond of a semiconductor package | |
US7508055B2 (en) | High heat release semiconductor and method for manufacturing the same | |
CN1127139C (zh) | 与半导体芯片相配合的封装的制造方法 | |
CN1288747C (zh) | 半导体芯片焊接用台阶状图案 | |
CN1134073C (zh) | 半导体器件 | |
US4298769A (en) | Hermetic plastic dual-in-line package for a semiconductor integrated circuit | |
CN1168537A (zh) | 具有高输入/输出连接的半导体集成电路器件 | |
CN1126399A (zh) | 光传感器 | |
KR200493123Y1 (ko) | 발광 소자 패키지 | |
CN1874010A (zh) | 一种低热阻的发光二极管封装装置 | |
CN1059053C (zh) | 侧面有凸缘的密封式半导体器件及其制造方法 | |
CN1574332A (zh) | 功率半导体器件 | |
CN1666333A (zh) | 可穿戴的硅芯片 | |
US20040075101A1 (en) | Semiconductor light-emitting device and method for manufacturing the device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C17 | Cessation of patent right | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20040107 Termination date: 20140510 |