KR960030354A - 반도체 장치의 실장체, 그 실장방법 및 실장용 밀봉재 - Google Patents

반도체 장치의 실장체, 그 실장방법 및 실장용 밀봉재 Download PDF

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Publication number
KR960030354A
KR960030354A KR1019960001634A KR19960001634A KR960030354A KR 960030354 A KR960030354 A KR 960030354A KR 1019960001634 A KR1019960001634 A KR 1019960001634A KR 19960001634 A KR19960001634 A KR 19960001634A KR 960030354 A KR960030354 A KR 960030354A
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South Korea
Prior art keywords
semiconductor device
rheology modifier
mounting
anhydride
filler
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KR1019960001634A
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English (en)
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KR0181615B1 (ko
Inventor
가즈노리 오모야
다카시 오바야시
와타루 사쿠라이
미쓰루 하라다
요시히로 벳쇼
Original Assignee
모리시다 요이치
마쯔시다 덴키 산교 가부시키가이샤
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Publication of KR960030354A publication Critical patent/KR960030354A/ko
Application granted granted Critical
Publication of KR0181615B1 publication Critical patent/KR0181615B1/ko

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    • H01L23/293—Organic, e.g. plastic
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Abstract

전극 패드를 가지는 반도체 장치와, 단자 전극을 가지는 기판과, 전극 패드의 일부에 설치된 전극과 가요성이 있는 도전성 접착층과, 점도가 100Pa·s 이하이고 틱소트로피 지수가 1.1 이하인 조성물을 경화하여 구성되는 밀봉층을 설치하고, 반도체 장치의 실장체를 실현한다. 조성물로는 예를 들어 폴리에폭시드, 산무수물 및 레올로지 개질제를 포함하는 수지 바인더와 충전재를 주성분으로 하고, 레올로지 개질제로 산무수물중의 유리산과 충전재의 표면상 극성기의 상호작용을 저해하는 기능을 가지는 것을 이용한다. 밀봉재의 유동성 개량에 의해 좁은 간격을 기포 생성없이 빠르게 메꾸는 밀봉층이 형성되기 때문에 신뢰성 및 생산성이 높은 반도체 장치의 실장체를 형성할 수 있다.

Description

반도체 장치의 실장체, 그 실장방법 및 실장용 밀봉재
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 실시예에 관한 반도체 장치의 구조를 나타내는 단면도.

Claims (29)

  1. 전극 패드를 가지는 반도체 장치와, 단자 전극을 가지는 기판과, 상기 반도체 장치의 전극 패드 상에 설치된 범프 전극과, 가요성을 가지는 도전성 접착제로 구성되고, 상기 범프 전극과 기판상의 단자 전극을 전기적으로 접속하는 도전성 접착층과, 점도가 100Pa·s 이하이고 틱소트로피 지수가 1.1 이하인 조성물을 경화하여 구성되고 상기 반도체 장치와 상기 기판의 간격을 메꾸어 양자를 기계적으로 접합하는 밀봉층을 구비한 것을 특징으로 하는 반도체 장치의 실장체.
  2. 제1항에 있어서, 상기 조성물은 폴리에폭시드, 카본산무수물, 레올로지 개질제 및 잠재성 경화촉매를 적어도 포함하는 수지 바인더와, 절연성 물질로 이루어지는 충전재를 주성분으로 포함하고, 상기 레올로지 개질제는 상기 카본산무수물 중의 유리산과 상기 충전재 표면상 극성기의 상호작용을 저해하는 기능을 가지는 것을 특징으로 하는 반도체 장치의 실장체.
  3. 제2항에 있어서, 상기 레올로지 개질제는 카본산무수물 중의 유리산을 선택적으로 흡착하는 물질을 포함하는 것을 특징으로 하는 반도체 장치의 실장체.
  4. 제2항에 있어서, 상기 레올로지 개질제는 루이스염기화합물인 것을 특징으로 하는 반도체 장치의 실장체.
  5. 제2항에 있어서, 상기 레올로지 개질제는 3급 아민화합물, 3급 포스핀화합물, 4급 암모늄염, 4급 포스포늄염 및 질소원자를 고리안에 포함하는 복소환화합물중 적어도 하나인 것을 특징으로 하는 반도체 장치의 실장체.
  6. 제2항에 있어서, 상기 수지 바인더 중의 카본산무수물은 적어도 환상 지방족 산무수물을 포함하는 것을 특징으로 하는 반도체 장치의 실장체.
  7. 제6항에 있어서, 상기 환상 지방족 산무수물은 적어도 트리알킬테트라하이드로프탈산무수물을 포함하는 것을 특징으로 하는 반도체 장치의 실장체.
  8. 제1항에 있어서, 상기 반도체 장치의 범프 전극은 2단 돌기형상의 스터드 범프 전극인 것을 특징으로 하는 반도체 장치의 실장체.
  9. 단자 전극을 가지는 기판상에 전극 패드를 가지는 반도체 장치를 탑재하도록 한 반도체 장치의 실장방법에 있어서, 상기 반도체 장치의 전극 패드에 범프 전극을 형성하는 제1공정과, 상기 범프 전극의 선단 부근에 도전성 접착제를 부착시키는 제2공정과, 상기 범프 전극과 기판의 단자전극의 위치맞춤하여 반도체 장치를 기판상에 설치하고, 상기 도전성 접착제를 통하여 반도체 장치의 범프 전극과 기판의 단자 전극을 전기적으로 접속하는 제3공정과, 점도가 100Pa·s이하이고 틱소트로피 지수가 1.1 이하인 조성물로 이루어지는 밀봉재를 조성하는 제4공정과, 상기 밀봉재를 상기 반도체 장치와 기판의 간격에 충전하는 제5공정과, 상기 밀봉재를 경화시켜 상기 반도체 장치와 기판을 기계적으로 접합하는 제6공정을 구비한 것을 특징으로 하는 반도체 장치의 실장방법.
  10. 제9항에 있어서, 상기 제4공정에서는 상기 조성물로서 폴리에폭시드, 카본산무수물, 레올로지개질제 및 잠재성 경화촉매를 적어도 포함하는 수지 바인더와, 절연성 물질로 이루어지는 충전재를 주성분으로 하는 조성물을 사용하고, 상기 레올로지 개질제는 상기 카본산무수물 중의 유리산과 상기 충전재 표면상극성기와의 상호작용을 저해하는 기능을 가지는 것을 특징으로 하는 반도체 장치의 실장방법.
  11. 제9항에 있어서, 상기 레올로지 개질제는 2액성 밀봉재의 경화촉매로서 이용되는 것을 경화기능을 발휘하지 않을 정도의 미량만 포함하는 것을 특징으로 하는 반도체 장치의 실장방법.
  12. 제10항에 있어서, 상기 제4공정에서는 상기 수지 바인더 중의 카본산무수물로서 적어도 환상 지방족 산무수물을 포함시키는 것을 특징으로 하는 반도체 장치의 실장방법.
  13. 제12항에 있어서, 상기 제4공정에서는 상기 환상 지방족 산무수물로서 적어도 트리알킬테트라 하이드로프탈산무수물을 포함시키는 것을 특징으로 하는 반도체 장치의 실장방법.
  14. 제9항에 있어서, 상기 제1공정에서는 상기 반도체 장치의 범프 전극으로서 2단돌기모양의 스터드 범프 전극을 형성하는 것을 특징으로 하는 반도체 장치의 실장방법.
  15. 제9항에 있어서, 상기 제5공정에서는 밀봉재를 실온 조건하에서 흘려 넣는 것을 특징으로 하는 반도체 실장방법.
  16. 제9항에 있어서, 상기 제5공정에서는 밀봉재를 감압조건하에서 흘려 넣는 것을 특징으로 하는 반도체 장치의 실장방법.
  17. 제9항에 있어서, 상기 제4공정에서는 우선 카본산무수물과 충전재의 일부를 혼합하고, 이 혼합물을 에이징한 후, 폴리에폭시드 및 충전재의 나머지를 더하는 것을 특징으로 하는 반도체 장치의 실장방법.
  18. 제10항에 있어서, 상기 레올로지 개질제는 카본산무수물 중의 유리산을 선택적으로 흡착하는 물질을 포함하는 것을 특징으로 하는 반도체 장치의 실장방법.
  19. 제10항에 있어서, 상기 레올로지 개질제는 루이스염기화합물인 것을 특징으로 하는 반도체 장치의 실장방법.
  20. 제10항에 있어서, 상기 레올로지 개질제는 3급 아민화합물, 3급 포스핀화합물, 4급 암모늄염, 4급 포스포늄염 및 질소원자를 고리안에 포함하는 복소환화합물 중 적어도 하나인 것을 특징으로 하는 반도체 장치의 실장방법.
  21. 반도체 장치와 기판의 간격을 메꾸어 양자를 접속하기 위한 밀봉재로서, 폴리에폭시드, 카본산무수물, 레올로지 개질제 및 잠재성 경화촉매를 적어도 포함하는 중량비 80~25%의 수지 바인더와, 절연성 물질로 이루어지는 중량비 20~75%의 충전재를 구비하고, 상기 레올로지 개질제는 상기 카본산무수물 중의 유리산과 상기 충전재 표면상 극성기와의 상호작용을 저해하는 기능을 가지는 것을 특징으로 하는 반도체 장치의 실장용 밀봉재.
  22. 제21항에 있어서, 상기 레올로지 개질제는 카본산무수물 중의 유리산을 선택적으로 흡착하는 물질을 포함하는 것을 특징으로 하는 반도체 장치의 실장용 밀봉재.
  23. 제21항에 있어서, 상기 레올로지 개질제는 루이스염기화합물인 것을 특징으로 하는 반도체 장치의 실장용 밀봉재.
  24. 제21항에 있어서, 상기 레올로지 개질제는 3급 아민화합물, 3급 포스핀화합물, 4급 암모늄염, 4급 포스포늄염 및 질소원자를 고리안에 포함하는 복소환화합물 중 적어도 하나인 것을 특징으로 하는 반도체 장치의 실장용 밀봉재.
  25. 제21항에 있어서, 상기 수지 바인더중의 카본산무수물은 적어도 환상 지방족 산무수물을 포함하는 것을 특징으로 하는 반도체 장치의 실장용 밀봉재.
  26. 제25항에 있어서, 상기 환상 지방족 산무수물은 적어도 트리알킬테트라하이드로프탈산무수물을 포함하는 것을 특징으로 하는 반도체 장치의 실장용 밀봉재.
  27. 제21항에 있어서, 상기 수지 바인더 및 상기 충전재가 일액화(一液化)되어 있는 것을 특징으로 하는 반도체 장치의 실장용 밀봉재.
  28. 제21항에 있어서, 상기 수지 바인더는, 상기 카본산무수물과 상기 폴리에폭시드의 당량비가 0.8~1.1이고, 상기 경화촉매의 수지 바인더 전체에 대한 중량비가 0.3~3%이고, 상기 레올로지 개질제의 수지 바인더 전체에 대한 중량비가 0.02~0.3%인 조성을 가지는 것을 특징으로 하는 반도체 장치의 실장용 밀봉재.
  29. 반도체 장치와 기판의 간격을 메꾸어 양자를 접속하기 위한 밀봉재로서, 폴리에폭시드, 카본산무수물, 레올로지 개질제 및 잠재성 경화촉매를 적어도 포함하는 중량비 80~25%의 수지 바인더와, 절연성 물질로 이루어지는 중량비 20~75%의 충전재를 구비하고, 우선 카본산무수물과 충전제의 일부를 혼합하며, 이 혼합물을 에이징한 후, 폴리에폭시드 및 충전재의 나머지를 더함으로써 조정된 것을 특징으로 하는 반도체 장치의 실장용 밀봉재.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019960001634A 1995-01-30 1996-01-25 반도체 장치의 실장체, 그 실장방법 및 실장용 밀봉재 KR0181615B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP95-012779 1995-01-30
JP1277995 1995-01-30
JP14437395 1995-06-12
JP95-144373 1995-06-12

Publications (2)

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KR960030354A true KR960030354A (ko) 1996-08-17
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Families Citing this family (105)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08335653A (ja) * 1995-04-07 1996-12-17 Nitto Denko Corp 半導体装置およびその製法並びに上記半導体装置の製造に用いる半導体装置用テープキャリア
US7041771B1 (en) * 1995-08-11 2006-05-09 Kac Holdings, Inc. Encapsulant with fluxing properties and method of use in flip-chip surface mount reflow soldering
US5783867A (en) * 1995-11-06 1998-07-21 Ford Motor Company Repairable flip-chip undercoating assembly and method and material for same
US6329711B1 (en) * 1995-11-08 2001-12-11 Fujitsu Limited Semiconductor device and mounting structure
US5804881A (en) 1995-11-27 1998-09-08 Motorola, Inc. Method and assembly for providing improved underchip encapsulation
JP3127812B2 (ja) * 1995-12-27 2001-01-29 株式会社デンソー 電気回路装置の封止構造
US5861661A (en) * 1995-12-27 1999-01-19 Industrial Technology Research Institute Composite bump tape automated bonded structure
JP2806348B2 (ja) * 1996-03-08 1998-09-30 日本電気株式会社 半導体素子の実装構造及びその製造方法
US5761048A (en) * 1996-04-16 1998-06-02 Lsi Logic Corp. Conductive polymer ball attachment for grid array semiconductor packages
JP2828021B2 (ja) * 1996-04-22 1998-11-25 日本電気株式会社 ベアチップ実装構造及び製造方法
JP3201957B2 (ja) * 1996-06-27 2001-08-27 インターナショナル・ビジネス・マシーンズ・コーポレーション 金属バンプ、金属バンプの製造方法、接続構造体
US6034331A (en) 1996-07-23 2000-03-07 Hitachi Chemical Company, Ltd. Connection sheet and electrode connection structure for electrically interconnecting electrodes facing each other, and method using the connection sheet
JP3928753B2 (ja) * 1996-08-06 2007-06-13 日立化成工業株式会社 マルチチップ実装法、および接着剤付チップの製造方法
JPH1064956A (ja) * 1996-08-20 1998-03-06 Fujitsu Ltd フェースダウンボンディング半導体装置
US6027791A (en) * 1996-09-30 2000-02-22 Kyocera Corporation Structure for mounting a wiring board
JP3944915B2 (ja) 1996-10-17 2007-07-18 セイコーエプソン株式会社 半導体装置の製造方法
DE69628018D1 (de) * 1996-10-30 2003-06-12 St Microelectronics Sa Halbleiterpackung mit mechanisch und elektrisch verbundenen Trägerelementen
JP3065549B2 (ja) * 1997-01-09 2000-07-17 富士通株式会社 半導体チップ部品の実装方法
US5929512A (en) * 1997-03-18 1999-07-27 Jacobs; Richard L. Urethane encapsulated integrated circuits and compositions therefor
JP3070514B2 (ja) * 1997-04-28 2000-07-31 日本電気株式会社 突起電極を有する半導体装置、半導体装置の実装方法およびその実装構造
JP3030271B2 (ja) 1997-05-19 2000-04-10 富士通株式会社 半導体部品の実装方法
JPH10335383A (ja) 1997-05-28 1998-12-18 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
WO1999000842A1 (en) * 1997-06-26 1999-01-07 Hitachi Chemical Company, Ltd. Substrate for mounting semiconductor chips
US6367150B1 (en) * 1997-09-05 2002-04-09 Northrop Grumman Corporation Solder flux compatible with flip-chip underfill material
JP3000975B2 (ja) * 1997-10-20 2000-01-17 富士通株式会社 半導体素子の実装構造
US6324069B1 (en) 1997-10-29 2001-11-27 Hestia Technologies, Inc. Chip package with molded underfill
US6038136A (en) * 1997-10-29 2000-03-14 Hestia Technologies, Inc. Chip package with molded underfill
US6495083B2 (en) 1997-10-29 2002-12-17 Hestia Technologies, Inc. Method of underfilling an integrated circuit chip
SG71734A1 (en) * 1997-11-21 2000-04-18 Inst Materials Research & Eng Area array stud bump flip chip and assembly process
US6049124A (en) * 1997-12-10 2000-04-11 Intel Corporation Semiconductor package
JP3367886B2 (ja) 1998-01-20 2003-01-20 株式会社村田製作所 電子回路装置
US6303408B1 (en) * 1998-02-03 2001-10-16 Tessera, Inc. Microelectronic assemblies with composite conductive elements
US6326696B1 (en) * 1998-02-04 2001-12-04 International Business Machines Corporation Electronic package with interconnected chips
WO1999056509A1 (en) * 1998-04-24 1999-11-04 Amerasia International Technology, Inc. Flip chip devices with flexible conductive adhesive
US6265776B1 (en) * 1998-04-27 2001-07-24 Fry's Metals, Inc. Flip chip with integrated flux and underfill
CN1143373C (zh) * 1998-07-01 2004-03-24 精工爱普生株式会社 半导体装置及其制造方法、电路基板和电子装置
US6329832B1 (en) * 1998-10-05 2001-12-11 Micron Technology, Inc. Method for in-line testing of flip-chip semiconductor assemblies
US6592943B2 (en) 1998-12-01 2003-07-15 Fujitsu Limited Stencil and method for depositing solder
US6054761A (en) * 1998-12-01 2000-04-25 Fujitsu Limited Multi-layer circuit substrates and electrical assemblies having conductive composition connectors
TW484101B (en) * 1998-12-17 2002-04-21 Hitachi Ltd Semiconductor device and its manufacturing method
JP3667184B2 (ja) * 1999-02-26 2005-07-06 住友ベークライト株式会社 半導体装置
US6549821B1 (en) 1999-02-26 2003-04-15 Micron Technology, Inc. Stereolithographic method and apparatus for packaging electronic components and resulting structures
US6194788B1 (en) * 1999-03-10 2001-02-27 Alpha Metals, Inc. Flip chip with integrated flux and underfill
US6261871B1 (en) * 1999-03-11 2001-07-17 Conexant Systems, Inc. Method and structure for temperature stabilization in flip chip technology
MY140714A (en) * 1999-07-08 2010-01-15 Sunstar Engineering Inc Underfilling material for semiconductor package
US6492738B2 (en) 1999-09-02 2002-12-10 Micron Technology, Inc. Apparatus and methods of testing and assembling bumped devices using an anisotropically conductive layer
KR100533673B1 (ko) * 1999-09-03 2005-12-05 세이코 엡슨 가부시키가이샤 반도체 장치 및 그 제조 방법, 회로 기판 및 전자 기기
JP2001093938A (ja) * 1999-09-20 2001-04-06 Nec Kansai Ltd 半導体装置及びその製造方法
AU1219001A (en) * 1999-10-19 2001-04-30 Motorola, Inc. Method of forming a microelectronic assembly
US6198170B1 (en) * 1999-12-16 2001-03-06 Conexant Systems, Inc. Bonding pad and support structure and method for their fabrication
US6538210B2 (en) * 1999-12-20 2003-03-25 Matsushita Electric Industrial Co., Ltd. Circuit component built-in module, radio device having the same, and method for producing the same
US7244675B2 (en) * 2000-03-23 2007-07-17 Sony Corporation Electrical connection materials and electrical connection method
TW517263B (en) * 2000-03-29 2003-01-11 Nitto Denko Corp Semiconductor device and process for producing the same, and tablet comprising epoxy resin composition
EP1223612A4 (en) * 2000-05-12 2005-06-29 Matsushita Electric Ind Co Ltd PCB FOR SEMICONDUCTOR COMPONENTS, THEIR MANUFACTURING METHOD AND MANUFACTURING OF THE FITTING PLANT FOR THE PCB
JP2002118199A (ja) * 2000-10-10 2002-04-19 Mitsubishi Electric Corp 半導体装置
US6703566B1 (en) * 2000-10-25 2004-03-09 Sae Magnetics (H.K.), Ltd. Bonding structure for a hard disk drive suspension using anisotropic conductive film
JP2002190497A (ja) * 2000-12-21 2002-07-05 Sony Corp フリップチップ実装用の封止樹脂
US6518096B2 (en) 2001-01-08 2003-02-11 Fujitsu Limited Interconnect assembly and Z-connection method for fine pitch substrates
TW527676B (en) * 2001-01-19 2003-04-11 Matsushita Electric Ind Co Ltd Photo-semiconductor module and method for manufacturing
US20020098620A1 (en) * 2001-01-24 2002-07-25 Yi-Chuan Ding Chip scale package and manufacturing method thereof
TWI313507B (en) * 2002-10-25 2009-08-11 Megica Corporatio Method for assembling chips
GB0107236D0 (en) * 2001-03-22 2001-05-16 Microemissive Displays Ltd Method of creating an electroluminescent device
JP5280597B2 (ja) * 2001-03-30 2013-09-04 サンスター技研株式会社 一液加熱硬化型エポキシ樹脂組成物および半導体実装用アンダーフィル材
JP2002353251A (ja) * 2001-05-22 2002-12-06 Rohm Co Ltd 半導体素子の実装構造
US7323360B2 (en) 2001-10-26 2008-01-29 Intel Corporation Electronic assemblies with filled no-flow underfill
US6732643B2 (en) * 2001-11-07 2004-05-11 Lg. Philips Lcd Co., Ltd. Method for forming pattern using printing process
JP3942017B2 (ja) * 2002-03-25 2007-07-11 富士フイルム株式会社 発光素子
US20040021214A1 (en) * 2002-04-16 2004-02-05 Avner Badehi Electro-optic integrated circuits with connectors and methods for the production thereof
KR20050007459A (ko) * 2002-04-16 2005-01-18 엑스룸 포토닉스 리미티드 통합 커넥터를 구비한 전자 광학 회로 및 그 제조 방법
JP2003332379A (ja) * 2002-05-16 2003-11-21 Oki Electric Ind Co Ltd 半導体装置、及びその製造方法
US6786391B2 (en) * 2002-10-16 2004-09-07 Kac Holdings, Inc. Method of controlling solder deposition utilizing two fluxes and preform
US7087458B2 (en) * 2002-10-30 2006-08-08 Advanpack Solutions Pte. Ltd. Method for fabricating a flip chip package with pillar bump and no flow underfill
US20050012225A1 (en) * 2002-11-15 2005-01-20 Choi Seung-Yong Wafer-level chip scale package and method for fabricating and using the same
WO2004082344A1 (en) * 2003-03-14 2004-09-23 Telefonaktiebolaget Lm Ericsson (Publ) A substrate structure, a method and an arrangement for producing such substrate structure
US6902954B2 (en) 2003-03-31 2005-06-07 Intel Corporation Temperature sustaining flip chip assembly process
JP2004342993A (ja) * 2003-05-19 2004-12-02 Seiko Epson Corp 半導体装置、電子デバイス、電子機器および半導体装置の製造方法
TWI234867B (en) * 2003-06-03 2005-06-21 Gigno Technology Co Ltd Flip-chip attach structure and method
JP4688679B2 (ja) 2003-09-09 2011-05-25 三洋電機株式会社 半導体モジュール
US20050056365A1 (en) * 2003-09-15 2005-03-17 Albert Chan Thermal interface adhesive
AU2003272062A1 (en) * 2003-10-15 2005-04-27 Xloom Photonics Ltd. Electro-optical circuitry having integrated connector and methods for the production thereof
JP4627632B2 (ja) * 2004-05-17 2011-02-09 Ｏｋｉセミコンダクタ株式会社 半導体装置
US20050287350A1 (en) * 2004-06-28 2005-12-29 Crouthamel David L Encapsulating compound having reduced dielectric constant
US8009436B2 (en) * 2005-04-28 2011-08-30 Stats Chippac Ltd. Integrated circuit package system with channel
CN100449744C (zh) * 2005-08-23 2009-01-07 南茂科技股份有限公司 引脚在芯片上的集成电路封装构造及其芯片承载件
DE102005041354B3 (de) * 2005-08-31 2007-01-25 Siemens Audiologische Technik Gmbh Verfahren zum Bestücken einer Leiterplatine durch isostatische Kräfte
US20070051774A1 (en) * 2005-09-06 2007-03-08 Stipp John N Method of controlling solder deposition on heat spreader used for semiconductor package
KR101363463B1 (ko) 2005-12-08 2014-02-14 페어차일드 세미컨덕터 코포레이션 도전성 잉크를 가진 플립 칩 ｍｌｐ
US20070158796A1 (en) * 2005-12-09 2007-07-12 International Rectifier Corporation Semiconductor package
JP4343177B2 (ja) * 2006-02-06 2009-10-14 富士通マイクロエレクトロニクス株式会社 半導体装置
JP4882570B2 (ja) * 2006-07-20 2012-02-22 パナソニック株式会社 モジュールの製造方法と、それにより製造したモジュール
WO2008026517A1 (fr) * 2006-08-28 2008-03-06 Murata Manufacturing Co., Ltd. Liant conducteur et dispositif électronique
US20080169574A1 (en) * 2007-01-12 2008-07-17 Nokia Corporation Direct Die Attachment
CN101679613A (zh) * 2007-06-15 2010-03-24 积水化学工业株式会社 光半导体元件用密封剂及光半导体元件
US20090093137A1 (en) * 2007-10-08 2009-04-09 Xloom Communications, (Israel) Ltd. Optical communications module
DE102007055017B4 (de) * 2007-11-14 2010-11-04 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zum Verbinden zweier Fügeflächen und Bauteil mit zwei verbundenen Fügeflächen
EP2225589B1 (en) * 2007-12-20 2014-07-16 Koninklijke Philips N.V. Direct conversion detector
JP5363839B2 (ja) * 2008-05-12 2013-12-11 田中貴金属工業株式会社 バンプ及び該バンプの形成方法並びに該バンプが形成された基板の実装方法
US20100123258A1 (en) * 2008-11-14 2010-05-20 Myung Jin Yim Low Temperature Board Level Assembly Using Anisotropically Conductive Materials
FR2943849B1 (fr) * 2009-03-31 2011-08-26 St Microelectronics Grenoble 2 Procede de realisation de boitiers semi-conducteurs et boitier semi-conducteur
JP4875790B2 (ja) * 2010-04-09 2012-02-15 オリンパスメディカルシステムズ株式会社 内視鏡装置
US8241964B2 (en) * 2010-05-13 2012-08-14 Stats Chippac, Ltd. Semiconductor device and method of embedding bumps formed on semiconductor die into penetrable adhesive layer to reduce die shifting during encapsulation
JP5772050B2 (ja) * 2011-02-22 2015-09-02 富士通株式会社 半導体装置及びその製造方法、電源装置
DE102011088216A1 (de) * 2011-12-12 2013-06-13 Continental Automotive Gmbh Motorsteuergerät mit Opferstruktur
DE102012007804B4 (de) * 2012-02-24 2022-06-02 Few Fahrzeugelektrikwerk Gmbh & Co. Kg Verfahren zum technologisch optimierten Ausführen von bleifreien Lötverbindungen
US9646923B2 (en) 2012-04-17 2017-05-09 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor devices, methods of manufacture thereof, and packaged semiconductor devices

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4604644A (en) * 1985-01-28 1986-08-05 International Business Machines Corporation Solder interconnection structure for joining semiconductor devices to substrates that have improved fatigue life, and process for making
JPS63268724A (ja) * 1987-04-24 1988-11-07 Matsushita Electric Works Ltd 液状エポキシ樹脂組成物
JP2515344B2 (ja) * 1987-07-24 1996-07-10 松下電工株式会社 封止用一液性の液状エポキシ樹脂組成物
US5121190A (en) * 1990-03-14 1992-06-09 International Business Machines Corp. Solder interconnection structure on organic substrates
US4999699A (en) * 1990-03-14 1991-03-12 International Business Machines Corporation Solder interconnection structure and process for making
JPH04130633A (ja) * 1990-09-20 1992-05-01 Matsushita Electron Corp 半導体装置とその製造方法およびそれに用いるキャピラリ
US5128746A (en) * 1990-09-27 1992-07-07 Motorola, Inc. Adhesive and encapsulant material with fluxing properties
US5136365A (en) * 1990-09-27 1992-08-04 Motorola, Inc. Anisotropic conductive adhesive and encapsulant material
US5194930A (en) * 1991-09-16 1993-03-16 International Business Machines Dielectric composition and solder interconnection structure for its use
US5218234A (en) * 1991-12-23 1993-06-08 Motorola, Inc. Semiconductor device with controlled spread polymeric underfill
KR100280762B1 (ko) * 1992-11-03 2001-03-02 비센트 비.인그라시아 노출 후부를 갖는 열적 강화된 반도체 장치 및 그 제조방법
US5436503A (en) * 1992-11-18 1995-07-25 Matsushita Electronics Corporation Semiconductor device and method of manufacturing the same
US5550408A (en) * 1992-11-18 1996-08-27 Matsushita Electronics Corporation Semiconductor device
JP2826049B2 (ja) * 1992-11-18 1998-11-18 松下電子工業株式会社 半導体装置およびその製造方法
US5371404A (en) * 1993-02-04 1994-12-06 Motorola, Inc. Thermally conductive integrated circuit package with radio frequency shielding
JPH06279654A (ja) * 1993-02-26 1994-10-04 Matsushita Electric Works Ltd 液状エポキシ樹脂組成物
JPH06313027A (ja) * 1993-05-06 1994-11-08 Matsushita Electric Works Ltd 封止用エポキシ樹脂成形材料
US5391397A (en) * 1994-04-05 1995-02-21 Motorola, Inc. Method of adhesion to a polyimide surface by formation of covalent bonds

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EP0878839A1 (en) 1998-11-18
EP1154470A2 (en) 2001-11-14
DE69628767T2 (de) 2004-02-12
EP0724289A2 (en) 1996-07-31
EP1154470A3 (en) 2001-12-19
US5641996A (en) 1997-06-24
EP0878839B1 (en) 2003-06-18
EP0724289A3 (en) 1996-12-04
KR0181615B1 (ko) 1999-04-15
DE69628767D1 (de) 2003-07-24

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