TW305098B - The installed method and material for semiconductor device - Google Patents

The installed method and material for semiconductor device Download PDF

Info

Publication number
TW305098B
TW305098B TW085107178A TW85107178A TW305098B TW 305098 B TW305098 B TW 305098B TW 085107178 A TW085107178 A TW 085107178A TW 85107178 A TW85107178 A TW 85107178A TW 305098 B TW305098 B TW 305098B
Authority
TW
Taiwan
Prior art keywords
semiconductor device
sealing material
installation
item
substrate
Prior art date
Application number
TW085107178A
Other languages
Chinese (zh)
Inventor
Kazunori Menya
Takashi Obayashi
Wataru Sakurai
Mitsuru Harada
Yoshihiro Bessho
Original Assignee
Matsushita Electric Ind Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP07308798A external-priority patent/JP3093621B2/en
Priority claimed from US08/593,675 external-priority patent/US5641996A/en
Application filed by Matsushita Electric Ind Co Ltd filed Critical Matsushita Electric Ind Co Ltd
Application granted granted Critical
Publication of TW305098B publication Critical patent/TW305098B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector

Landscapes

  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

An installation of semiconductor device. Its features include: Semiconductor device with electrode pad; Substrate with end electrode; Bump electrode is installed on electrode pad of semiconductor device; Conductive sticking layer with flexibility; Sealing layer is formed by hardening composition material with touching index below 1.1 and viscosity below 100pa-sec.

Description

305098 A7 經濟部中央標準局；S、工消费合作社印製 _B7__ 五、發明説明（1) 發明說明 〔發明背景〕 本發明係關於藉由倒裝片（Πιρ chip)安裝方式透 過導電性粘接劑使半導體裝置裝載於基板上，且透過樹脂 封合層使基板及半導髏裝置機械性連接之半導髏裝置之安 裝體及其安裝方法。 習知之半導鳒裝置等《子零件之連接端子及基板上電 路圓型端電極之連接，一般係用焊接。但是至目前爲止， 隨著半導髏封裝等之小型化，連接端子數之增加等，連接 端子間欒得愈窄。因此，無法應付粘接部面稹大的習知焊 接方式。 因此，在最近，盛行使晶片之有源元件（active device) 面在朝 向下方之狀態 ，直接安裝在基板上之端 蕙 極 (倒裝片安裝），而謀求安裝面稹之效率化。此倒裝片安 裝方式有各種提案並付諸實施，以下介紹其代表例子。 (1 )焊接等之低融點金屬接合 如園8所示，在半導體裝置1之電極襯蟄2上，設有 焊接沖擊《極8，在與基板6上之端電極5對正位置後， 使焊料焙融而半導髏裝置1及基板6可電性連接。與此類 似之方法，‘亦有提議如圇9所示，形成金的沖擊電極（1)-ump electrode) 3，在沖擊電極3及基板6上端電極5 之間形成低融點金圈之鍍層，例如鍍銦層9 ，使此鍍銦層 9之低融點金牖熔融並電性連接後，使半導髏裝置1及基 本紙張尺度遑用中國國家揉準（CNS ) A4规格（2丨0凑297公釐） _ Δ _ 一 -- ----------裝------.訂-----線 (請先閱讀背面之注意事項再填寫本頁) A7 B7 經濟部中央標準局只工消费合作社印袈 五、 發明説明 ( 2 ) - 板 6 透 過 封 合 層 1 0 而 機 械 式 接 合 的 方 法 0 1 1 ( 2 ) 藉 封 合 樹 脂 硬 化 收 縮 atg 應 力 之 接 合 1 |· I 如 圖 1 0 所 示 > 在 半 導 體 裝 置 1 之 電 極 襯 墊 2 設 有 金 請 先 閱 1 I 的 沖 擊 電 極 3 ♦ 在 使 半 導 體 裝 置 1 上 之 沖 擊 電 極 3 與 基 板 讀 背 1 I 面 1 6 上 之 端 電 極 5 對 正 位 置 之 狀 態 下 > 於 半 導 髖 裝 置 1 及 基 1 1 意 者 I 板 6 之 間 隊 填 充 封 合 材 料 後 9 使 封 合 材 料 硬 化 而 形 成 封 合 事 項 1 I 再 1 I 層 1 2 藉 封 合 層 1 2 之 硬 化 收 縮 力 ， 在 沖 擊 « 極 3 及 端 填 % 本 I 裝 I 氰 極 5 間 產 生 壓 縮 應 力 > 使 兩 者 電 性 連 接 ， 同 時 9 使 半 導 頁 1 1 髗 裝 置 1 及 基 板 6 機 械 式 接 合 0 又 9 爲 提 高 連 接 可 靠 度 1 1 如 圖 1 0 所 示 在 端 « 極 5 上 形 成 鍍 金 層 1 1 〇 1 I L 訂 I ( 3 ) 藉 各 向 異 導 % 性 粘 接 劑 之 接 合 I 1 如 圖 1 1 所 示 在 半 導 髏 裝 置 1 之 電 極 襯 墊 2 設 有 1 1 金 所 構 成 之 沖 擊 電 極 3 1 在 半 導 髏 裝 置 1 及 基 板 6 之 間 隙 1 1 1 使 導 « 性 粒 子 分 散 於 粘 合 劑 中 ， 並 填 充 各 向 異 導 性粘 線 I 接 劑 5 在 加 壓 狀 態 下 加 熱 9 使 各 向 異 導 箱t 性 粘 接 劑 硬 化 9 1 ! 形 成 各 向 異 性 粘 接 層 1 3 5 班 以 使 沖 擊 電 極 3 及 基 板 6 上 1 I 的 端 電 極 5 電 性 連 接 同 時 » 使 半 導 體 裝 置 1 及 基 板 6 機 饿 1 I | 械 式 接 合 0 1 .•I 1 '/( 4 ) 導 性 粘 接 劑 之 接 合 ! 1 如 圆 1 2 所 示 ♦ 在 半 導 體 裝 置 1 之 電 極 襯 墊 2 設 有 1 1 金 所 構 成 之 沖 擊 « 極 3 9 使 導 電 粘 接 劑 轉 印 至 沖 擊 電 極 3 1 1 本紙張尺度逋用中國國家揉率（CNS ) A4规格（210j<297公釐） 305098 a? B7 五、發明説明（3 ) ，將沖擊電極3及基板6上之端電極5對正位置後，使導 電性粘接劑硬化，藉以透過導電性粘接層4，使沖擊電極 3及端電極5«性連接。其後，在半導體裝置1及基板6 之間隙塡充封合材料，使其硬化形成封合層7，藉以使半 導體裝置1及基板6機械式接合。此封合材料係以含有甲 苯酚酚醛清漆型環氧樹脂及酚醛清漆型酚樹脂（硬化劑） 之樹脂粘合劑與絕緣性粒子所組成之填料爲主成分之組成 物，廣泛地被使用。 但是，上述各安裝方式，具有以下各種問題。 對安裝方式（1)及（2)，由於要緩和半導體裝置 及基板膨脹係數之差値所產生之熱應力爲困難的構造，故 在廣範園之溫度區域，謀求其連接安定性之用途，有所限 制。 * 經濟部中央標準局貝工消費合作社印製 ---—IJ I - - - -- -- I « -II —I- { (請先閲讀背面之注意1f項再填寫本頁) 線 在安裝方式（3 )，在各向異導電性粘接劑中之樹脂 粘合劑，雖使用可曲性高的樹脂材料可緩和熱應力，但在 此情況，由於粘接劑之吸濕性高，在高溫度環境下的連接 安定性有問題。又，即使使粘接劑之熱膨脹率與半導髗裝 置或基板相符，雖可緩和熱應力，但在此情況，會含有多 量低膨眼率之塡料，故有初期連接可靠度惡化之虞。 關於安裝方式（4)，可使在導電性粘接劑具有可曲 性之封合材料之熱膨脹率與半導體裝置及基板相合，以緩 和熱應力。因此，此安裝方式（4 )，在上述倒裝片之各 安裝方式中，爲所期望之方式。 但是，在上述安裝方式（4 )中，如上述混合甲酚酚 本紙張尺度逍用中國《家揉率（CNS ) Λ4规格（2丨0苓297公釐） -6 - 經濟部中央檁準局W3C工消費合作社印製 305098 at __________ B7五、發明説明（4 ) 酸清漆型環氧樹脂及酚醛清漆型酚樹脂等之組成物所成之 封合材料粘度高，又，爲使熱膨脹率與半導髏及基板相符 ’必須提高封合材料中塡料置之比率，結果造成封合材料 成爲高粘度。因此，使封合材料塡充於半導體裝置及基板 間之際，有必要使封合材料加熱至7 0〜8 0°C以上，並 使粘度降低。其結果，生產性差，且溫度上升時起因於熱 膨脹率差之熱應力，使封合材料封入時造成導電連接部受 損，而有連接可靠度降低之問題。 一方面，亦想到將在室溫下以非常低粘度之聚環氧化 物及酸酐爲主成分之樹脂粘合劑作爲封合材料使用。但是 爲降低在該樹脂粘合劑之熱膨脹率而添加多量之塡料時， 會造成封合材料粘度降低或觸變性指數變高。結果，無法 封入半導體裝置及基板之間，或者即使可封入會有多置氣 泡包園，因氣泡所致之已硬化封合材料之熱膨脹等會因場 所而有不均勻之情形，而造成連接可靠度降低之問題，因 此，使用聚環氧化物及酸酐所成之樹脂作爲粘合劑之封合 材料缺乏實用性。 〔發明概要〕 本發明之目的係爲得到封合材料之良好封合特性，而 探究必要之粘度及觸變性特性之界限，藉使用滿足此等粘 度及觸變性特性之封合材料，可提供連接可靠度及生產性 高的半導髋裝置及其安裝方法。 本發明人等探究習知材料作爲封合材料利用有困難之 -----------^-----------線 (請先閲請背面之注意事項再填寫本頁) 本紙張尺度逋用中國國家標準（CNS ) Μ規格（2103297公釐） 經濟部中失樣隼局負工消費合作社印製 A7 _____B7_五、發明説明（5 ) 原因並非只是粘度，而是在於封合材料之觸變性指數高。 例如，在含有聚環氧化物及酸酐之樹脂粘合劑，得知藉由 酸肝中之游離酸及塡料表面上極性基之相互作用，會阻礙 流動性。因此，鑑於所探究之事資，爲逵成上述目的，故 採用以下手段。 本發明所採用之手段，係在倒裝片安裝方式中，使用 粘度100粕•秒以下，觸變性指數在1.1以下之組成 物作爲封合材料，藉如此硬化所得之封合層使半導《裝置 及基板機械式連接者。 本發明之半導髏裝置之安裝«，具備：具電極襯墊之 半導嫌裝置：具端電極之基板：設於上述半導體裝置之電 極襯墊之沖擊電極：以具可曲性之導電性粘接劑所構成， 使上述沖擊電極及基板上之端電極電性遑接的導電性粘接 使粘度爲1 ο 〇粕·秒以下，觸變性指數1 . 1以下 之組成物硬化所構成，埋沒於上述半導髏裝置及上述基板 之間隙間，使兩者機械式接合之封合層。 由此構成，在基板上裝載半導«裝置之半導體裝置中 ，與半導«裝置及基板機械式接合之封合層，在液狀之安 裝製程中具有低粘度（1 0 0粕•秒以下）且低的觸變性 指數（1 . 1 )以下，故安裝製程中於封合材料注入時， 在間隙不會急速產生氣泡，即使小間隙亦能充分浸透，又 ，可使注入溫度降低。藉該等性質，以半導體裝置-基板 間之密接性及耐熱衝擊性爲始，不僅可提高電性連接之可 靠度，生產性亦可提高。 ----------^------^-1τί*-----0 (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家楳準（CNS ) Α4規格（2丨〇3 297公簸） 305098 A7 B7 經濟部中央標隼局员X消费含作权印製 五、發明説明（6 ) 在上述組成物中，含有：至少含環氣化物，羧酸酐， 流變學改良劑及潛在性硬化觸媒之樹脂粘合劑；及絕緣性 物質所成之塡料爲主成分，上述流變學改良劑可由具有阻 礙上述羧酸酐中游離酸及上述塡料表面上之極性基之相互 作用機能而構成。 上述之流變學改良劑含有可選擇性吸附羧酸酐中游鼴 酸之物質較佳。 上述流變學改良劑較佳是由路易士緘基化合物梅成。 又，由環內含有三級胺化合物，三級膦化合物，四級 銨鹽，四級鱗鹽及氮原子之雜環化合物中至少一種來構成 上述流變學改良劑.較佳。 在該等構成中，封合材料係使用主成分爲酸酐硬化型 環氧樹脂及絕嫌性物質等热膨脹率小者，故作用於封合層 之熱應力會降低。而且，流變學改良劑係使用具有阻礙酸 肝中游離酸及塡料表面上極性基之相互作用者，在申請專 利範圍第1項可實現低粘度及低觸變性指數。 在上述樹脂粘合劑中之羧酸酐中，至少含有環狀脂肪 族酸酐較佳。 此時在上述環狀脂肪族酸酐中，可至少含有三烷基四 氫鄰苯二甲酸酐。 如此之構成，可利用吸水性低之環狀脂肪族酸酐之特 性，而確保樹脂·粘合劑之良好耐濕性。又，在半導體裝置 之安裝製程，液狀之樹脂粘合劑之粘度亦低，故封合材料 之封合可在短時間完成，可降低半導體裝置之成本。 —.---------裝— (請先閲讀背面之注意事項再填寫本頁) 線 本紙張尺度適用中國國家揉準（CNS > Μ規格（2丨0彳297公釐） 經濟部中央橾準扃ΗX消#合泎社中裴 A 7 _____ B7_ 五、發明説明（7 ) 上述半導體裝置之沖擊《極，以二段凸起狀之柱式沖 擊髦極構成較佳。 由此構成，可使半導體裝匿之沖擊電極數高密度地設 置。其後在裝載半導體裝置於基板之際，在將設置成高密 度之沖擊電極及基板上之端電極電性連接後，使封合材料 注入兩者間之間陳時，使用低粘度且低觸變性指數之封合 材料，即使在小間陳亦可使封合材料充分進行。因此，在 高密度安裝所形成之半導《裝置中，可提高半導體裝置及 基板之電性連接及機械式接合的可靠度。 本發明之半導體裝置之安裝方法係在具有端電極之基 板上裝載具有電極襯墊之半導《裝置之半導體裝置之安裝 方法，具備下列步蹂：在上述半導體裝置之電極襯墊形成 沖擊電極之第一製程：在上述沖擊電極之前端附近使導電 性粘接劑附著之第二製程：在上述沖擊電極及基板之端電 極對正位置而設置半導體裝置於基板上，透過上述導鼇性 粘接劑，使半導體裝置之沖擊電極及基板之端電極電性連 接之第三製程；調整粘度爲1 〇 〇粕·秒以下，觸變性指 數爲 1 . 1以下之組成物所成封合材料之第四製程，使上述封 合材料充埵於上述半導鳢裝置及基板之間隙之第五製程； 使上述封合材料硬化，機械式接合上述半導髏裝置及基板 之第六製程者。 藉此方法，使用低粘度（1 〇 0粕.秒以下）且低觸 變性指數（1 · 1以下）之封合材料，可在安裝製程中封 本紙張尺度適用中國國家標準（CNS )八4规格（210彳297公釐)~~~ -----L-----t.------ITl·^-----^ (請先閱讀背面之注意ί項再填寫本頁) B7 B7 經濟部中央標準局一貝X消费合作社印製 五、發明説明（8 ) 合材料注入時，不在間隙中急速產生氣泡，即使小間隙亦 可充分浸透，又可降低注入溫度。因此，以安裝之半導餿 裝置一基板間之密接性及耐熱衝擊性爲始，不僅可提高電 性連接可靠度，同時縮短安裝所翳時間。 上述之第四製程中，上述組成物可使用至少含有聚環 氧化物，羧酸酐，流變學改良劑及潛在性硬化觸媒之樹脂 粘合劑，與絕綠性物質所成塡料爲主成分之組成物，上述 流變學改良劑，具有阻礙上述羧酸酐中之游醮酸及上述塡 料表面上之極性基之相互作用的功能較佳。 藉此，可在第五製程使封合材料之粘度及觸變性指數 降低。又，封合材料之主成分係使用酸酐硬化型環氧樹脂 及絕緣性物質等熱膨脹率小者，故作用於安裝後之封合層 的熱應力會降低。 在上述流變學改良劑，作爲二液性封合材料之硬化觸 媒使用者可僅含有不發揮硬化機能程度之微量。 藉此方法，在進行第四製程及第五製程之前，並不開 始封合材料之硬化，而是在第六製程中使封合材料硬化之 際，使流變學改良劑組合於構成封合樹脂層之網眼構造內 。因此，藉由添加流變學改良劑，可防止耐熱性或耐濕性 降低等之不良影響。 在上述第四製程，上述樹脂粘合劑中之羧酸酐，至少 含有環狀脂肪族酸酐較佳。 此時，如申請專利範圍第1 3項所述，上述環狀脂肪 族酸酐至少含有三烷基四氩鄰苯二甲酸酐。 --.--------裝------.訂— ^-----線 (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度遑用中國IS家標準（CNS > A4规格（210¾ 297公釐） -11 - 305098 A7 B7 五、發明説明（9 ) 藉此方法，環狀脂肪族酸酐爲低粘度且低吸水率，故 在第六製程中可縮短封合材料之封入時間，使耐濕性提高 〇 在上述第一步驟中，上述半導髏裝置之沖擊電極，可 形成二段凸起狀之柱式沖擊電極。 藉此方法可高密度設置半導體裝置之沖擊電極數，在 第五製程中，在設置成高密度之沖擊電極及基板上之端電 極之間，低粘度且低觸變性指數之封合材料不會產生氣泡 且在小的間隙亦可充分進行。因此，可提高高密度安裝之 半導饈裝《及基板之電性連接及機械式接合之可靠度。 在上述第五製程中，使封合材料在室溫條件下流入較 佳。 藉此方法，因熱應力降低使耐熱衝擊性提高等，可獲 得電性連接可靠度極高之半導體裝置之安裝體。 在上述第五製程，使封合材料在減壓條件下流入較佳 0 經濟部中央標嗥局Μ工消费合作社印聚 藉此方法，可得到生產性提高，且電性連接可靠度極 高之半導體裝置之安裝體。 在上述第四製程，首先混合羧酸酐及塡料之一部份， 蝕刻此混合物後，可添加聚環氣化物及塡料之殘餘部份。 藉此方法，可緩和酸酐中游離酸及滇料表面上極性基 之相互作用，可實現封合材料之低粘度特性及低觸變性特 性。 在上述流變學改良劑，可含有選擇性吸附羧酸酐中游 本紙張尺度遙用中國國家橾奉（CNS ) A4*t格（2丨0彳297公釐） (請先閱讀背面之注意事項再填寫本頁) -12 - B7 B7 經濟部中央標準局Μ Μ消费合作社印狀 五、發明説明（10) 離酸的物質。 藉此方法，以流變學改良劑使酸酐中之游離酸選擇性 吸附時，可阻礙游離酸及«料表面上極性基之相互作用， 故可實現封合材料之低粘度特性及低觸變性特性。 使上述流變學改良劑成爲路易士緘基化合物較佳。 又，上述流變學改良劑可爲環內含有三級胺化合物， 三級膦化合物，四級銨鹽，四級镂鹽及氮原子之雜環化合 物中至少一種。 此等方法會阻礙流變學改良劑所致游離酸及塡料表面 上極性基之相互作用，故可實現封合材料之低粘度特性及 低觸變特性。 本發明第一半導髏裝置之安裝用封合材料，係埋沒半 導體裝置及基板之間隙，使兩者連接用之封合材料，具備 :至少含有聚環氧化物，羧酸酐，流變學改良劑及潛在性 硬化觸媒之重量比8 0〜2 5 %之樹脂粘合劑，及絕緣性 物質所成重量比2 0〜7 5%之塡料。因此，上述流變學 改良劑具有阻礙上述羧酸酐中游離酸及上述塡料表面上極 性基之相互作用的機能。 由此構成，封合材料具有低粘度（1 0 0粕·秒以下 )且低的觸變性指數（1 . 1以下），在安裝製程中封合 材料之注入時，在間隙氣泡不致快速產生，即使小間隙亦 能充分浸透，又，亦可使注入溫度降低。而且，藉潛在性 硬化觸媒，可確保封合材料保存狀態中之安定性及實用的 硬化促進機能。因此，在安裝髏中不僅半導《裝置-基板 本紙伕尺度逡用中國國家標準（CNS > Α4规格（210、297公釐） 13 ；-----裝— (請先閱讀背面之注意事項再填寫本頁) 訂 線 B7 B7 纯濟部中央標準局員工消費合作社印敦 本紙張尺度遑用中困國家標準（CNS ) A4規格（2丨0>4297公釐） 五、發明说明（ιυ 間之密接性及耐熱衝擊性高，電性連接可靠度提高，同時 生產性亦提高。 在上述流變學改良劑，含有可選擇式吸附羧酸酐中之 游離酸的物質較佳。 又，以路易士鹹基化合物構成上述流變學改良劑較佳 〇 上述流變學改良劑可爲環內含有三級胺化合物，三級 膦化合物，四級銨a，四級鱗鹽及氮原子之雜環化合物中 之至少一種。 藉該等構成，封合材料係使用主成份中酸酐硬化型環 氧樹脂及絕綠性物質等熱膨脹率小者，故作用於所形成安 裝體中封合餍之熱應力會減低。而且，流變學改良劑係用 於阻礙酸酐中游離酸及«料表面上極性基之相互作用，故 可實現低粘度及低觸變性指數。 在上述樹脂粘合劑中之羧酸酐，可至少含有環狀脂肪 族酸酐。 此情形，在上述環狀脂肪族酸酐可至少含有三烷基四 氳鄰苯二甲酸酐。 藉該等梅成，可利用吸水性低的環狀脂肪族酸酐之特 性而確保樹脂粘合劑之良好耐濕性。又，在半導鳢裝置之 安裝製程，由於液狀之樹脂粘合劑粘度亦低，可在短時間 完成封合材料之封合，可降低安裝成本。 將上述樹脂粘合劑及上述塡料一液化較佳。 藉此構成，蠣料之均勻分散變得容易，成爲逋於 * 14 - I n |批衣i I 訂 I —線 (請先閱讀背面之注意事項再填寫本頁) 經濟部中央標隼局貞工消費含作.i^ A 7 ____ B7_ 五、發明説明（I2) L S I製造之封合材料。 上述樹脂粘合劑具有：上述羧酸酐及上述聚環氧化合 物之當量比爲0 .8〜1 _ 1 ，對上述硬化觸媒樹脂粘合 劑全體之重置比爲0.3〜3%，對上述流變學改良劑之 樹脂粘合劑全體之重量比爲0 . 0 2〜0 · 3%之組成， 的構成較佳。 本發明第2半導《裝置之安裝用封合材料，係埋沒半 導髏裝置及基板之間隙，使兩者連接用之封合材料，具備 :至少含有聚環氧化物，羧酸酐，流變學改良劑及潛在性 硬化觸媒之重量比8 0〜2 5%之樹脂粘合劑，與絕緣性 物質所成重量比2 0〜7 5%之塡料。其後，首先混合羧 酸酐及塡料之一部份，蝕刻此混合物後，藉添加聚環氧化 物及塡料之殘餘部份而可調整之。 藉此構成，可抑制羧酸酐中游離酸及塡料表面極性基 之相互作用，故會降低封合材料之觸變性指數。 〔圖示之簡單說明〕 圚1係有關實施形態之半導體裝置檮造之斷面圖。 圖2係擴大詳示圖1所示半導體裝置連接部之部份新 面圓0 圖3係藉有關實施形態之柱式沖擊方式所形成半導髏 裝置構造之斷面圖。 圖4 (a)〜（e)，係有關實施形態之半導體裝置 倒裝片安裝製程中構造變化之断面圖。 本紙張尺度遑用中國國家標準（CNS ) A4規格（2丨0>«297公釐）. 15 - ----------裝------^訂丨·-----線 (請先閱讀背面之注意事項再填寫本頁) 305038 A7 B7 經濟部中央標準局負工消費合作社印狀 五、 發明説明 ( 13) 1 I 圖 5 係 有 關 實 施 形 態 之 半 導 髏 裝 置 之 倒 裝 片 安 裝 步 踝 1 1 順 序 之 流 程 圚 0 I 圖 6 係 實 施 形 態 所 使 用 樹 脂 粘 合 劑 中 雙 酚 型 環 氧 樹 脂 I 之 —* 般 構 造 式 之 圓 〇 請 先 閱 1 ! I 圖 7 係 實 施 形 態 所 使 用 樹 脂 粘 合 劑 中 三 焼 基 四 氫 鄰 苯 ii 背 1 I* 二 甲 酸 —* 般 構 造 式 之 圖 0 之 注 1 | 意 I 圖 8 係 由 焊 接 沖 擊 « 極 所 連 接 之 習 知 半 導 fit 裝 置 構 造 事 項 1 I 再 1 I 之 斷 面 圖 〇 寫 本 1 装 | 圓 9 係 以 低 融 點 金 屬 層 所 連 接 之 習 知 半 導 體 裝 置 構 造 頁 1 1 之 斷 面 9B 〇 1 I 圖 1 0 係 以 封 合 樹 脂 之 硬 化 收 縮 應 力 所 連 接 之 習 知 半 1 I 導 髋 裝 置 構 造 之 ivr 面 圖 0 訂 Ϊ 圖 1 1 係 以 各 向 異 導 η 性 粘 接 劑 所 連 接 之 習 知 半 導 體 1 1' 裝 S 構 造 之 m 面 圖 0 1 1 圖 1 2 係 以 導 電 性 粘 接 劑 連 接 之 習 知 半 導 體 裝 置 構 造 1 1 之 斷 面 圖 0 線 1 I ( 較 佳 實 施 形 態 之 說 明 ) 1 1 I 以 下 9 參 照 圓 面 說 明 本 發 明 之 實 施 形 態 0 1 1 J 圖 1 爲 有 關 實 施 形 態 之 半 導 髏 裝 置 之 安 裝 體 斷 面 m 9 1 圖 2 爲 擴 大 詳 示 其 連 接 部 附近所 示 之 部 份 断 面 η 此 半 導 -i- 1 雔 裝 置 之 安 裝 賸 > 係 由 上 述 倒 裝 片 安 裝 方 式 所 形 成 者 0 在 1 圖 1 及 圖 2 中 9 符 號 1 爲 L S I 晶 片 等 之 半 導 體 裝 置 $ 符 1 I 號 2 爲 設 在 半 導 髏 裝 置 1 一 部 份 之 電 極 jag Μ m 0 符 號 3 爲 金 1 1 本紙張.尺度逍用中國國家標準（CNS > Μ規格（210>«97公釐）-“ _ 經濟部中央標準局Μ工消费合作杜印^ A 7 _ B7 五、發明説明（l4 ) 所構成之沖擊電極，符號4爲以特殊環氧樹脂及銀鈀（ Ag P d )合金等導電粉爲主成份之組成物（導電性粘接 劑）所構成之導電性粘接層。符號6係表示裝載半導體裝 置1用之陶瓷基板等之基板，符號5係基板6上之端電極 。符號7係由酸酐硬化型環氧樹脂爲主成分之封合材料所 構成之封合層。此封合材料7係使用硬化前之流動狀態下 ，觸變性指數1 . 1以下粘度爲1 0 0粕.秒者。在半導 體裝置1 一基板6間利用毛管現象注入此封合材料後，而 使之硬化者，但是，觸變性指數係指剪切速度爲ε，粘度 爲7時，爲ε所示之指檫，在此剪切速度表示2 (1/秒）〜20 (1/秒）時之値。 又，圖3係所謂由使用所謂柱式沖擊電極之倒裝片安 裝方式所形成半導髖裝置之安裝體之斷面圖。在圚3所示 之半導體裝置之安裝體，基本上與上述圖1所示之半導體 裝置之安裝髏大致相同，圖3所示半導髏裝置之安裝髏， 如圖1所示僅在替代沖擊電極3而使用二段凸起狀之柱式 沖擊電極14之點爲不同。如此，採用柱式沖擊電極14 之倒裝片安裝體，可如後所詳述，亦有可對應於以高密度 設匿更多數電極襯墊之半導體裝置之優點。 其次，如圖3所示在使用柱式沖擊m極1 4之倒裝片 安裝製程，參照圖4 ( a )〜（e )及圚5並說明之。圖 4 ( a )〜（e )係顯示倒裝片安裝製程中半導體裝置安 裝膻變化之断面硼，圖5係倒裝片安裝製程之流程圖。以 下，依循圖5所示之各步驟，說明安裝製程。 本紙張尺度遑用中國國家標率（CNS ) A4规格（210X297公釐）~- --r--.-----裝------^訂丨.-----線 (請先閱讀背面之注意事項再填寫本頁)305098 A7 Central Bureau of Standards of the Ministry of Economic Affairs; S. Printed by the industrial and consumer cooperative _B7__ V. Description of the invention (1) Description of the invention [Background of the invention] The present invention relates to the use of flip chip (Πιρ chip) mounting method through conductive bonding The semiconductor device is mounted on the substrate by the agent, and the installation body and the installation method of the semi-conductor device which mechanically connects the substrate and the semi-conductor device through the resin sealing layer. The conventional semiconducting device, such as the connection terminals of the sub-components and the circular terminal electrodes of the circuit board, is generally soldered. However, up to now, with the miniaturization of semiconductor packages and the increase in the number of connection terminals, the narrower the connection terminals have become. Therefore, it is impossible to cope with the conventional welding method in which the bonding portion has a large surface area. Therefore, recently, the active device surface of the chip is facing downward, and the terminal electrode mounted directly on the substrate (flip chip mounting) is used to increase the efficiency of the mounting surface. There are various proposals and implementations of this flip-chip installation method. The representative examples are described below. (1) Low-melting-point metal bonding such as soldering, as shown in FIG. 8, the electrode pad 2 of the semiconductor device 1 is provided with a welding impact electrode 8, after being aligned with the end electrode 5 on the substrate 6, The solder is melted and the semi-conducting skull device 1 and the substrate 6 can be electrically connected. In a similar way, it is also proposed to form a gold impulse electrode (1) -ump electrode 3 as shown in Fig. 9 to form a low-melting-point gold ring plating between the impulse electrode 3 and the upper electrode 5 of the substrate 6 For example, the indium-plated layer 9 is melted and electrically connected to the low-melting-point gold knob of the indium-plated layer 9, so that the semi-conducting skull device 1 and the basic paper size are not in accordance with the Chinese National Standard (CNS) A4 specifications 0 scrape together 297 mm) _ Δ _ a ------------ set ----- ------ loaded line (please read the note and then fill in the back of this page). A7 B7 The Central Bureau of Standards of the Ministry of Economic Affairs, Consumers ’Cooperative Society 葈 V. Description of the invention (2)-Method of mechanically joining the plates 6 through the sealing layer 1 0 0 1 1 (2) Hardening shrinkage atg stress by sealing resin Bonding 1 | · I as shown in FIG. 1 0> The electrode pad 2 of the semiconductor device 1 is provided with gold. Please read 1 I's impact electrode 3 ♦ When the impact electrode 3 on the semiconductor device 1 is read from the substrate 1 Terminal 1 on the I side 5 In the state of correct position> After filling the sealing material between the semi-conducting hip device 1 and the base 1 1 Italian I plate 6 9 The sealing material is hardened to form the sealing item 1 I then 1 I layer 1 2 By the hardening and shrinking force of the sealing layer 1 2, a compressive stress is generated between the impact «pole 3 and the end filling. The I equipment I and the cyanide electrode 5 make the two electrically connected, and at the same time 9 make the semi-conducting page 1 1 髗Device 1 and substrate 6 are mechanically bonded 0 and 9 to improve connection reliability 1 1 As shown in FIG. 1 0, a gold-plated layer is formed on the terminal «pole 5 1 1 〇1 IL set I (3) by anisotropy% Bonding of the adhesive I 1 As shown in FIG. 1 1, the electrode pad 2 of the semi-conductor device 1 is provided with an impact electrode 3 composed of 1 1 gold 1 1 The gap 1 between the semi-conductor device 1 and the substrate 6 1 1 1 Disperse the conductive particles in the binder, and Fill the anisotropic adhesive wire I joint agent 5 Heating under pressure 9 Harden the anisotropic conductive box t-type adhesive 9 1! Form an anisotropic adhesive layer 1 3 5 to make the impact electrode 3 At the same time, the terminal electrode 5 of the 1 I on the substrate 6 is electrically connected at the same time »Make the semiconductor device 1 and the substrate 6 mechanically 1 I | Mechanical bonding 0 1. • I 1 '/ (4) Conductive adhesive bonding! 1 As shown by the circle 1 2 ♦ The electrode pad 2 of the semiconductor device 1 is provided with an impact of 1 1 gold «pole 3 9 to transfer the conductive adhesive to the impact electrode 3 1 1 Rate (CNS) A4 specification (210j < 297mm) 305098 a? B7 5. Description of the invention (3) After the impact electrode 3 and the end electrode 5 on the substrate 6 are aligned, the conductive adhesive is hardened, Through the conductive adhesive layer 4, the impact electrode 3 and the terminal electrode 5 are electrically connected. After that, the sealing material is filled in the gap between the semiconductor device 1 and the substrate 6 and hardened to form the sealing layer 7, whereby the semiconductor device 1 and the substrate 6 are mechanically bonded. This sealing material is mainly composed of a resin binder containing cresol novolac epoxy resin and novolac phenol resin (hardener) and a filler composed of insulating particles, and is widely used. However, the above installation methods have the following various problems. For the mounting methods (1) and (2), it is difficult to relax the thermal stress generated by the difference between the expansion coefficients of the semiconductor device and the substrate. Therefore, in the temperature range of Guangfanyuan, it is necessary to use the connection stability. There are restrictions. * Printed by Beigong Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs ----- IJ I-----I «-II —I- {(please read the note 1f on the back and fill in this page) Method (3), although the resin adhesive in the anisotropic conductive adhesive uses a highly flexible resin material to relieve thermal stress, in this case, since the adhesive has high hygroscopicity, There is a problem with connection stability in high temperature environments. In addition, even if the thermal expansion rate of the adhesive is matched with the semiconductor device or the substrate, although thermal stress can be relieved, in this case, a large amount of low-bulging rate material is contained, so the reliability of initial connection may be deteriorated . Regarding the mounting method (4), the thermal expansion coefficient of the sealing material that is flexible with the conductive adhesive can be matched with the semiconductor device and the substrate to relieve thermal stress. Therefore, this mounting method (4) is the desired method among the mounting methods of the above flip chip. However, in the above installation method (4), as described above, the mixed cresol phenolic paper standard is used in China's "home kneading rate (CNS) Λ4 specification (2 丨 0 Ling 297 mm) -6-Central Purification Bureau of the Ministry of Economic Affairs Printed by W3C Industrial and Consumer Cooperatives 305098 at __________ B7 V. Description of the invention (4) The viscosity of the sealing material formed by the composition of acid varnish epoxy resin and novolac phenol resin is high. The conformity of the guide skeleton and the substrate must increase the ratio of the packing material in the sealing material, and as a result, the sealing material becomes highly viscous. Therefore, when the sealing material is filled between the semiconductor device and the substrate, it is necessary to heat the sealing material to 70 to 80 ° C or higher and reduce the viscosity. As a result, the productivity is poor, and the thermal stress due to the difference in thermal expansion rate when the temperature rises causes damage to the conductive connection portion when the sealing material is sealed, and there is a problem that the connection reliability is lowered. On the one hand, it is also conceivable to use a resin binder mainly composed of a very low-viscosity polyepoxide and acid anhydride as a sealing material at room temperature. However, when a large amount of binder is added to reduce the thermal expansion rate of the resin binder, the viscosity of the sealing material will decrease or the thixotropy index will increase. As a result, it cannot be sealed between the semiconductor device and the substrate, or even if it can be sealed, there will be multiple bubble wraps, and the thermal expansion of the hardened sealing material due to the bubbles may be uneven due to the location, resulting in a reliable connection The problem of lowering the degree, therefore, the use of resins made of polyepoxides and anhydrides as sealing materials for adhesives lacks practicality. [Summary of the Invention] The purpose of the present invention is to obtain good sealing characteristics of the sealing material, and to explore the necessary viscosity and thixotropy characteristics of the boundary, by using these viscosity and thixotropy characteristics of the sealing material to provide connection A semi-conductive hip device with high reliability and high productivity and its installation method. The inventors explored the difficulty of using conventional materials as sealing materials ------------- ^ ----------- line (please read the precautions on the back first (Fill in this page) This paper uses the Chinese National Standard (CNS) Μ specifications (2103297mm). The A7 _____B7_ is printed by the Falcon Bureau of the Ministry of Economic Affairs. The description of the invention (5) is not just viscosity, It is because the thixotropy index of the sealing material is high. For example, in resin binders containing polyepoxides and anhydrides, it is known that the interaction between the free acid in acid liver and the polar groups on the surface of the base material can impede fluidity. Therefore, in view of the resources explored, in order to achieve the above purpose, the following means are adopted. The method used in the present invention is to use a composition with a viscosity of less than 100 meals · sec and a thixotropy index of less than 1.1 as the sealing material in the flip-chip mounting method. Mechanical connector of device and substrate. The installation of the semiconducting skull device of the present invention includes: a semiconducting device with electrode pads: a substrate with terminal electrodes: an impact electrode provided on the electrode pads of the above semiconductor device: with flexible conductivity It is composed of an adhesive that electrically bonds the above-mentioned impact electrode and the terminal electrode on the substrate electrically to a composition with a viscosity of 1 ο 〇 meal · sec or less and a thixotropy index of 1.1 or less, A sealing layer buried in the gap between the semi-conductor device and the substrate to mechanically join the two. With this configuration, in the semiconductor device in which the semiconductor device is mounted on the substrate, the sealing layer that is mechanically joined to the semiconductor device and the substrate has a low viscosity (less than 100 seconds / second) in the liquid mounting process ) And a low thixotropy index (1.1) or less, so when the sealing material is injected during the installation process, bubbles will not rapidly occur in the gap, and even a small gap can be fully penetrated, and the injection temperature can be reduced. With these properties, starting from the adhesion and thermal shock resistance between the semiconductor device and the substrate, not only can the reliability of the electrical connection be improved, but also the productivity can be improved. ---------- ^ ------ ^-1τί * ----- 0 (Please read the precautions on the back before filling this page) This paper size is applicable to China National Standards (CNS ) Α4 specifications (2 丨 〇3 297 turbulence) 305098 A7 B7 Central Bureau of Economic Affairs Falcon Bureau member X consumption printing with copyright including five, description of invention (6) In the above composition, it contains: at least contains ring gasification, Carboxylic anhydride, rheology modifier and resin binder for latent hardening catalyst; and the base material made of insulating material as the main component, the rheology modifier can be inhibited by the free acid in the carboxylic anhydride and the above It is formed by the interaction function of the polar groups on the surface of the material. The rheology modifier mentioned above preferably contains a substance capable of selectively adsorbing citric acid in carboxylic anhydride. The above-mentioned rheology modifier is preferably made of a Lewis halo compound. Furthermore, the above-mentioned rheology modifier is preferably constituted by at least one of a heterocyclic compound containing a tertiary amine compound, a tertiary phosphine compound, a tertiary ammonium salt, a tertiary quaternary salt and a nitrogen atom in the ring. In these constitutions, the sealing material uses an anhydride-cured epoxy resin and an insulative substance, etc. whose main components are small in thermal expansion coefficient, so the thermal stress acting on the sealing layer is reduced. In addition, the rheology modifier is used to block the interaction between the free acid in the acid liver and the polar group on the surface of the substrate, and the low viscosity and low thixotropy index can be achieved in the first patent application. It is preferable that the carboxylic acid anhydride in the resin binder contains at least a cyclic aliphatic acid anhydride. In this case, the above-mentioned cyclic aliphatic acid anhydride may contain at least trialkyltetrahydrophthalic anhydride. With such a configuration, the characteristics of the cyclic aliphatic acid anhydride with low water absorption can be utilized to ensure good moisture resistance of the resin and binder. In addition, in the mounting process of the semiconductor device, the viscosity of the liquid resin adhesive is also low, so the sealing of the sealing material can be completed in a short time, and the cost of the semiconductor device can be reduced. —.--------- 装 — (Please read the precautions on the back before filling in this page) The size of the line paper is applicable to the Chinese national standard (CNS > M specifications (2 丨 0 彳 297mm) The Ministry of Economic Affairs, Central Government, 揾 准 扃 ΗX 消 # 合 泎 社 中 裴 A 7 _____ B7_ V. Description of the invention (7) The impact of the above-mentioned semiconductor device is preferably constituted by a two-stage convex pillar-type impact pole. With this configuration, the number of impact electrodes mounted in the semiconductor can be set at a high density. After that, when the semiconductor device is mounted on the substrate, the impact electrodes provided in the high density and the terminal electrodes on the substrate are electrically connected to When the composite material is injected between the two, use a low-viscosity and low thixotropy index sealing material, even in a small room, the sealing material can be fully carried out. Therefore, the semi-conducting device formed by high density installation In this way, the reliability of the electrical connection and mechanical bonding of the semiconductor device and the substrate can be improved. The mounting method of the semiconductor device of the present invention is to mount the semiconductor device with the electrode pad on the substrate with the terminal electrode. installation method, Prepare the following steps: the first process of forming the impact electrode on the electrode pad of the semiconductor device: the second process of attaching the conductive adhesive near the front end of the impact electrode: the second process of the end electrode pair of the impact electrode and the substrate The semiconductor device is placed on the substrate in a right position, and the conductive adhesive is used to electrically connect the impact electrode of the semiconductor device and the terminal electrode of the substrate. The third process is to adjust the viscosity to less than 100,000 meals · sec. The fourth process of the sealing material formed by a composition with a denaturation index of 1.1 or less, and the fifth process of filling the sealing material into the gap between the semiconducting device and the substrate; hardening the sealing material, mechanically This is the sixth process for joining the above semi-conductor device and substrate by this method. Using this method, a sealing material with a low viscosity (less than 100,000 meals.sec) and a low thixotropy index (below 1.1) can be used for installation The size of the paper used in the process is applicable to the Chinese National Standard (CNS) 8.4 specifications (210 297 mm) ~~~ ----- L ----- t .------ ITl · ^- --- ^ (Please read the notes on the back before filling this page) B 7 B7 Printed by the Central Bureau of Standards of the Ministry of Economic Affairs No.1 X Consumer Cooperative. V. Description of the invention (8) When the composite material is injected, bubbles are not rapidly generated in the gap, even a small gap can be fully penetrated, and the injection temperature can be reduced. Therefore, The adhesion and thermal shock resistance of the installed semi-conducting device are not only to improve the reliability of electrical connection, but also shorten the installation time. In the above fourth process, the above composition can use at least Epoxy, carboxylic anhydride, rheology modifiers and resin binders for latent curing catalysts, a composition composed of a material composed of a green substance, and the above rheology modifiers have hindered the above The function of the interaction between the glutamic acid in the carboxylic anhydride and the polar group on the surface of the above-mentioned base material is better. In this way, the viscosity and thixotropy index of the sealing material can be reduced in the fifth process. In addition, since the main component of the sealing material is an acid anhydride-cured epoxy resin or an insulating material, which has a small thermal expansion coefficient, the thermal stress acting on the sealing layer after mounting is reduced. In the above-mentioned rheology modifier, the user of the hardening catalyst as a two-component sealing material may contain only a trace amount that does not exert a hardening function. By this method, before the fourth process and the fifth process, the hardening of the sealing material is not started, but when the sealing material is hardened in the sixth process, a rheology modifier is combined to form the seal Within the mesh structure of the resin layer. Therefore, by adding a rheology modifier, it is possible to prevent adverse effects such as a reduction in heat resistance or moisture resistance. In the above fourth process, the carboxylic acid anhydride in the resin binder preferably contains at least a cyclic aliphatic acid anhydride. In this case, as described in item 13 of the patent application range, the cyclic aliphatic acid anhydride contains at least trialkyltetrahydrophthalic anhydride. --.-------- 装 ------. 訂 — ^ ----- line (please read the precautions on the back before filling in this page) (CNS > A4 specification (210¾ 297 mm) -11-305098 A7 B7 V. Description of the invention (9) With this method, the cyclic aliphatic acid anhydride has a low viscosity and a low water absorption rate, so it can be shortened in the sixth process The sealing time of the sealing material improves the moisture resistance. In the first step, the impact electrode of the semi-conductor device can form a two-stage convex pillar impact electrode. By this method, the semiconductor can be arranged at a high density The number of impact electrodes of the device, in the fifth process, between the high-density impact electrodes and the terminal electrodes on the substrate, the sealing material with low viscosity and low thixotropy index will not generate bubbles and also in small gaps It can be fully carried out. Therefore, the reliability of the electrical connection and mechanical bonding of the semiconductor package with high-density mounting and the substrate can be improved. In the above fifth process, it is better to allow the sealing material to flow in at room temperature By this method, the thermal shock resistance is improved due to the reduction of thermal stress, etc., The electrical connection is highly reliable for the installation of semiconductor devices. In the above-mentioned fifth process, the sealing material is allowed to flow under reduced pressure. 0 A semiconductor device mounting body with improved productivity and extremely high electrical reliability is obtained. In the above-mentioned fourth process, first, a part of the carboxylic acid anhydride and the base material are mixed, and after etching the mixture, the polycyclic gasification compound and The residual part of the material. By this method, the interaction between the free acid in the anhydride and the polar group on the surface of the material can be eased, and the low viscosity characteristic and low thixotropy characteristic of the sealing material can be achieved. In the above rheology modifier ， Can contain selective adsorption of carboxylic anhydride in the middle of the paper. This paper is used remotely in China National Standard (CNS) A4 * t grid (2 丨 0 彳 297mm) (please read the precautions on the back and fill in this page) -12- B7 B7 MM Consumer Cooperatives, Central Bureau of Standards, Ministry of Economic Affairs, Printing V. Description of the invention (10) Substances that are acid-free. By this method, when free acids in acid anhydride are selectively adsorbed with rheology modifiers, they can hinder free acids and «The interaction of polar groups on the surface of the material, so that the low viscosity characteristics and low thixotropy characteristics of the sealing material can be achieved. It is better to make the above-mentioned rheology modifier into a Lewis-based compound. Also, the above-mentioned rheology modifier It can be at least one of heterocyclic compounds containing tertiary amine compounds, tertiary phosphine compounds, tertiary ammonium salts, tertiary ammonium salts and nitrogen atoms in the ring. These methods can hinder free acids and rheology modifiers. The interaction of polar groups on the surface of the material can achieve the low viscosity characteristics and low thixotropic characteristics of the sealing material. The sealing material for the installation of the first semi-conductor device of the present invention is to bury the gap between the semiconductor device and the substrate, The sealing material used to connect the two includes: a resin binder containing at least a polyepoxide, a carboxylic acid anhydride, a rheology modifier, and a latent curing catalyst at a weight ratio of 80 to 25%, and insulation The weight ratio of the sex material is 20 ~ 75%. Therefore, the rheology modifier has a function of inhibiting the interaction between the free acid in the carboxylic anhydride and the polar group on the surface of the base. As a result, the sealing material has a low viscosity (less than 100 meal · sec) and a low thixotropy index (below 1.1). When the sealing material is injected during the installation process, bubbles in the gap are not quickly generated. Even a small gap can be fully saturated, and the injection temperature can also be reduced. In addition, the latent curing catalyst can ensure the stability of the sealing material in the stored state and the practical curing promotion function. Therefore, in the installation of the skull, not only the semi-conducting "device-substrate paper paper scale standard uses the Chinese national standard (CNS> Α4 specifications (210, 297 mm) 13; ----- installed-(please read the note on the back Please fill in this page again) Line B7 B7 Pure Economy Ministry of Central Standards Bureau Employee Consumer Cooperative Indone Paper Standards Standards (CNS) A4 Specification (2 丨 0> 4297mm) V. Description of Invention (ιυ The adhesion between them is high and the thermal shock resistance is high, the reliability of electrical connection is improved, and the productivity is also improved. Among the above rheology modifiers, those containing the free acid in the selective adsorption of carboxylic acid anhydride are preferred. The Lewis salt-based compound constitutes the above-mentioned rheology modifier preferably. The above-mentioned rheology modifier may be a compound containing a tertiary amine compound, a tertiary phosphine compound, a tertiary ammonium a, a tertiary quaternary salt and a nitrogen atom At least one of the ring compounds. With these constitutions, the sealing material uses an anhydride-hardening epoxy resin and a green substance, etc., which are the main components, and has a small thermal expansion rate, so it acts on the heat of the sealing material in the formed mounting body. The stress will be reduced. Moreover, the rheology modifier is used to hinder the interaction between the free acid in the anhydride and the polar group on the surface of the material, so it can achieve low viscosity and low thixotropy index. The carboxylic anhydride in the above resin binder can be at least Contains cyclic aliphatic acid anhydride. In this case, the above-mentioned cyclic aliphatic acid anhydride may contain at least trialkyltetrakisphthalic anhydride. With these plums, the characteristics of cyclic aliphatic acid anhydride with low water absorption can be utilized To ensure the good moisture resistance of the resin adhesive. In addition, in the installation process of the semiconducting snakehead device, due to the low viscosity of the liquid resin adhesive, the sealing material can be sealed in a short time, which can reduce the installation Cost. It is better to liquefy the above-mentioned resin binder and the above-mentioned materials. With this configuration, the uniform dispersion of the oyster material becomes easy, and it becomes more than * 14-I n | Read the precautions on the back and then fill out this page) The Ministry of Economic Affairs Central Standard Falcon Bureau's Consumption Consumption Works. I ^ A 7 ____ B7_ 5. Description of the Invention (I2) Sealing materials made by LSI. The above resin adhesives have: the above Carboxylic anhydride and the above polyepoxidation The equivalent ratio is 0.8 ~ 1 _ 1, the reset ratio to the entire hardened catalyst resin binder is 0.3 ~ 3%, and the weight ratio to the whole rheology modifier resin binder is 0 . 0 2 ~ 0 · 3% composition, the composition is better. The second semiconducting device of the present invention, "the installation of the sealing material for the device, is to bury the gap between the semiconducting skull device and the substrate, so that the two are used for sealing Material: equipped with at least a resin binder containing polyepoxide, carboxylic anhydride, rheology modifier and latent curing catalyst at a weight ratio of 80 to 25%, and a weight ratio of 20 to insulating material ~ 7 5% base material. After that, first mix a part of carboxylic anhydride and base material, after etching this mixture, it can be adjusted by adding the remaining part of polyepoxide and base material. With this configuration, the interaction between the free acid in the carboxylic anhydride and the polar group on the surface of the base material can be suppressed, so that the thixotropy index of the sealing material can be reduced. [Simple description of the diagram] Fig. 1 is a cross-sectional view of the semiconductor device fabrication according to the embodiment. FIG. 2 is an enlarged detail showing a part of the new face circle of the connection portion of the semiconductor device shown in FIG. 0. FIG. 3 is a cross-sectional view of the structure of the semi-conducting skull device formed by the pillar-type impact method of the related embodiment. 4 (a) to (e) are cross-sectional views of structural changes during the flip-chip mounting process of the semiconductor device of the embodiment. This paper uses the Chinese National Standard (CNS) A4 specification (2 丨 0> «297mm). 15----------- installed ------ ^ ordered 丨 · --- --Line (please read the precautions on the back and then fill out this page) 305038 A7 B7 The Ministry of Economic Affairs Central Standards Bureau Negative Work Consumer Cooperative Seal V. Description of the Invention (13) 1 I Figure 5 is a semi-conductor device related to the implementation form The flip-chip mounting step ankle 1 1 sequence of flow 0 I Figure 6 is the bisphenol-type epoxy resin I used in the embodiment-the general structure of the circle. Please read 1! I Figure 7 is a resin binder used in the embodiment, trialkyl tetrahydrophthalene ii back 1 I * dicarboxylic acid-* general structure of Figure 0 Note 1 | Italian I Figure 8 is connected by welding impact «pole Conventional semi-conductor fit device construction items 1 I then 1 I cross-sectional view 〇 Script 1 Packaging | Circle 9 is a conventional semiconductor device structure connected with a low-melting-point metal layer. Page 1 1 Section 9B 〇1 I Figure 1 0 is a conventional semi-conductor connected by the curing shrinkage stress of a sealing resin. Ivr plane of the hip device structure Figure 0 Order Ϊ Figure 1 1 is a conventional semiconductor connected with anisotropic conductive η-type adhesive 1 1 'm-plane of the S-mounted structure 0 1 1 Figure 1 2 is conductive Conventional semiconductor device structure 1 1 connected by an adhesive 1 1 Cross-sectional view 0 Line 1 I (Description of the preferred embodiment) 1 1 I The following 9 describes the embodiment of the present invention with reference to a round surface 0 1 1 J FIG. 1 is related to The cross section of the mounting body of the semi-conducting skull device of the embodiment m 9 1 FIG. 2 is an enlarged detail showing a part of the cross section η shown near the connection part. The semi-conducting-i- 1 installation of the device is left over from the above Outfit Formed by the chip mounting method 0 in 1 Figure 1 and Figure 2 9 Symbol 1 is a semiconductor device such as an LSI chip. Symbol 1 I No. 2 is an electrode provided in a part of the semiconductor device 1 jag Μ m 0 Symbol 3 For gold 1 1 paper. Standard Chinese standard (CNS > M specifications (210 > «97mm)-" _ Central Ministry of Economic Affairs, Ministry of Economic Affairs, Consumer Cooperation Du Yin ^ A 7 _ B7 V. Description of invention (L4) Impact electrode, symbol 4 is a conductive adhesive layer composed of a special epoxy resin and silver palladium (Ag Pd) alloy and other conductive powder as the main component (conductive adhesive) . The symbol 6 indicates a substrate such as a ceramic substrate for mounting the semiconductor device 1, and the symbol 5 indicates an end electrode on the substrate 6. Symbol 7 is a sealing layer composed of a sealing material mainly composed of an anhydride-curing epoxy resin. This sealing material 7 is used in the flow state before hardening, with a viscosity of less than 1.1 thixotropy index of 1.0 meal. Seconds. After the sealing material is injected between the semiconductor device 1 and the substrate 6 by using the capillary phenomenon to harden it, the thixotropy index refers to the shear rate of ε and the viscosity of 7, which is the index shown by ε, Here, the shear rate represents the value from 2 (1 / sec) to 20 (1 / sec). Fig. 3 is a cross-sectional view of a so-called hip-conductor device mounting body formed by a flip-chip mounting method using a so-called column impact electrode. The installation body of the semiconductor device shown in Fig. 3 is basically the same as the installation skull of the semiconductor device shown in Fig. 1 above, and the installation skull of the semi-conductive skull device shown in Fig. 3 is only used to replace the impact The electrode 3 is different in that the two-stage convex pillar impact electrode 14 is used. In this way, the flip-chip mounting body using the pillar-type impact electrode 14 can be described in detail later, and also has an advantage that it can correspond to a semiconductor device in which a larger number of electrode pads are provided at a high density. Next, as shown in Fig. 3, in the flip-chip mounting process using a column-type impact m-pole 14, refer to Figs. 4 (a) to (e) and Q5 and explain. Figures 4 (a) ~ (e) show the cross-sectional boron of the semiconductor device mounting device during the flip chip mounting process, and Figure 5 is a flow chart of the flip chip mounting process. Below, follow the steps shown in Figure 5 to explain the installation process. This paper uses the Chinese National Standard (CNS) A4 specification (210X297mm) ~---r --.----- installed ------ ^ ordered 丨 .----- line ( (Please read the notes on the back before filling this page)

Su5〇9§ B7 .經濟部中央標嗥局員X消费合作社印敦 五、發明説明（15 ) 首先在步驟ST1 ，使用AU線在半導鳢裝置1 ( LS I晶片）之各《極襯墊2形成柱式沖擊電極1 4 ，在 步驟ST 2，茬各柱式沖擊電極1 4 ，進行推應平坦面之 均勻製程，使各柱式沖擊電極14前端面之位置一致。 其次在步驟ST3，如圖4 (a)〜（c)所示，在 柱式沖擊電極1 4側朝下方之狀態，使此半導體裝置1位 於導電性粘接劑4 a所塗覆之基板2 0上方，由此狀態下 降，使柱式沖擊《極1 4浸溃於導電性粘接劑4 a中後， 使半導髏裝置提高至上方，使導電性粘接劑4 a —捆式地 轉印於各柱式沖擊電極14。 其次在步驟ST4 ，ST5，如圖4 (d)所示，在 設有多個端電極5之陶姿基板6上裝載半導體裝置1。此 時，使半導體裝置1之各柱式沖擊電極14及基板6上之 各端電極5各自對正位置，藉加熱硬化導電性粘接劑，形 成導電性粘接層4。藉此，使半導體裝置1之柱式沖擊電 極1 4及基板6之端電極5電性連接。 其次，在步騍ST6，進行連接狀態之檢査，若電性 連接狀態不良時（NG時），在步驟ST7下進行（半導 體裝置〉之交換後回至步輟ST 4 ，另一方面，若電性連 接狀態良好（0K時），則進行至步蹂ST8。 其次在步驟ST8，將具低粘度（1 0..0粕·秒以下 )且低觸變性指數（1 . 1以下）之組成物所成之封合材 料，在室溫下注入半導體裝置1及基板6之間隙，進行連 接部之樹脂封合後，在步驟S T 9 ，加熱使封合材料中之 -----.-----裝------^訂丨·-----線 (請先閱讀背而之注意事項再填寫本頁) 本紙張尺度逋用中國«家梂準（CNS ) A4规格（210JC297公教）Jg - 經濟部中央標隼局Η工消费"作^印焚 B7 ~ " ~ ~ ~ — ~ — ~ ........... *·—1 五、發明説明（16 ) 樹脂粘合劑硬化。此時，如圚4 (e)所示，形成封合層 7，藉此封合層7使半導饅裝置1及基板6機械式接合。 其後，在步驟ST1 0，進行最終檢査，完成倒裝片 安裝製程。 上述倒裝片安裝製程所使用之封合材料，因爲低粘度 且低觸變性指數，故即使在室溫程度之低溫下封合材料之 注入可快速地進行，同時，即使在小間隙封合材料亦可充 分進行。因此，可縮短封合所需時間，同時可保持透過粘 接劑4所連接接合部的連接可靠度。再者，封合材料爲以 改良流動性之酸酐硬化型環氧樹脂及熔絲矽（hused sn-ica)等填料爲主成份之組成物，故硬化後之热膨脹率亦 低。如此，因封合層7之熱膨脹率低，故可抑制構成半導 體裝置1之矽基板，及構成基板6之例如氧化鋁基板之熱 膨脹率差所產生之熱應力。又，此等環氣樹脂所構成之封 合材料耐熱性高且粘接强度高，故即使在高溫高濕環境下 亦可達成安定之連接可靠度。 又，由於導電性連接劑4具高度可曲性，可緩和熱應 力，亦可提高連接安定性。 如上述，依上述倒裝片安裝製程，可使半導髏裝置1 及基板6在極高度可靠度下安定地連接。 又，在實施形態中，係由金製成沖擊鼇極3 ’然而並 非限定其材質於金，例如銅等其他金驅所形成者亦可。又 ，沖擊電極之形狀並非只特別限定於上述之柱式沖擊電極 ，一般用於倒裝片安裝用者均可。但是，使用圖3及圖4 本紙張尺度遑用中國國家橾準（CNS ) Α4規格（2U«K 297公釐）-19 - ： ------裝------'訂—*-----線 f請先閱讀背面之注意事項再填寫本頁) 經濟部中央標準局S工消费含作社印裝 A7 B7五、發明说明（17 ) (a )〜（e )所示之柱式沖擊電極，可抑制導電性粘接 層4往横方向之擴散，故可謀求安裝密度之大幅提高。 又，導電性粘接劑4之材質並不限於環氣系，若爲具 有可曲性者則材質並無限定。例如，SBR，NBR， I RBR，C R等之橡膠系，丙烯系，聚酯系，聚醯胺系 ，聚醚系，聚氨基甲酸酯系，聚亞胺系，矽酮系等。導電 性粘接劑所含導電粉之材質，若爲—般用者均可，例如銀 ，金鈀等之貴金屬粉末，鎳，銅等賤金屬粉末，焊接，銀 鈀等之合金粉末，鍍銀銅粉等之複合粉，再者，可使用例 如碳之具導電性非金屬粉末。該等導電粉可單獨或混合二 種以上使用。又，該等導電粉並無特別限定其粒徑，形狀 0 —方面，封合材料主要係由樹脂粘合劑及填料所構成 ，而樹脂粘合劑係以聚環氧化物及酸酐及流變學改良劑爲 必須成分。在此所使用之樹脂粘合劑中之聚環氧化物，並 無特別限定成份，通常係使用稱爲環氧化合物，環氧樹脂 者，例如圖6所示，一般構造式所表示之雙酚型環氧樹脂 酚醛清漆環氧樹脂，縮水甘油醚型環氧樹脂，縮水甘油酯 型環氧樹脂，縮水甘油胺型環氣樹脂，脂環型環氧樹脂， 聯苯型環氧樹脂，某型環氧樹脂，氧化苯乙烯，烷基縮水 甘油醚，烷基縮水甘油酯等。該等可單獨使用或混合二種 以上使用。 又，在此所使用之酸酐，通常可使用作爲環氧化合物 ，環氧樹脂之硬化劑使用者。最佳之例爲，具有圖7所式 本紙張尺度遑用中國闺家標率（CNS ) A4規格（21〇7<297公釐)~: 20 - """" : * 装 訂 線 (請先閱讀背面之注意事項再填寫本頁) 經濟部中央標準局：«工消资合作社印製 305098 A7 B7五、發明説明（IS ) —般構造式所示構造之三垸基四氫鄰苯二甲酸酐。又，其 他之較佳例有甲基四氫鄰苯二甲酸酐，或甲基六氫鄰苯二 甲酸肝，甲基海米克酸肝（ra e t h y丨h y m i c a c i d a π h y d r i d e )等之環狀脂肪族系且爲2 5 °C之液饈。但並非限定於此 。該等可單獨或2種以上混合使用。尤其是，使上述之物 作爲樹脂粘合劑之主成份使用，可在非常低粘度下獲得高 耐熱性，高耐濕性，高密接性之封合材料。 封合材料之樹脂粘合劑，除了上述必須成分以外，以 提高耐熱性，提髙耐濕性，提高密接强度，熱膨脹率調整 ，流變學調整，反應性調整等爲目的之第三粘合劑成分可 因應需要添加β 封合材料中之塡料，若爲平均粒徑1〜5 0 //m之粉 髏並無所謂，較佳之例有矽石，氧化鋁等之氧化化合物或 氮化鋁等之氮化物，碳化矽等之碳化物，矽化物等，熱安 定且低热膨眼率者爲所期望。該等塡料成分即使爲二種以 上任意之組合亦可使用。塡料之量並無特別限定，相對於 封合材料全量，重量比爲2 0〜8 0%較佳。使用該等塡 料成分，可實現絕緣性優異且熱應力之產生亦小之封合材 料。 又，作爲改良封合材料流動性之流變學改良劑，若具 有切断酸酐中游離酸及塡料表面上極性基之相互作用，具 有使封合材料之觸變性指數降低者，則方法並無特別限定 - 一 装 訂 線 {請先閲讀背面之注意事項再填寫本頁) 本紙張尺度通用中國U家標準（CNS..)八4規格（210j(297公釐）：21 經濟部中央標準局員工消費合泎社印製 A7 __ B7 五、發明説明（19 ) 較佳之例有： (1 )預先混合酸酐之一部份及填料，並蝕刻（加熱 至1 0 0 τ以下之蝕刻亦可）後，添加聚環氧化合物及殘 餘之《料及其他添加劑，以得到封合材料之方法。 (2)將選擇性吸附酸酐中游離酸之物霣添加於封合 材料中之方法。 (3 )將比«料表面上之極性基更强，會產生與游離 酸相互作用之物質（不含Ν — Η基，〇 — Η基之路易士鹹 基化合物等）添加於封合材料中之方法等。 但是，在此所謂之路易士鹹基化合物有三級胺化合物 ，三級膦化合物，溴化四丁基銨等之四級銨鹽，苯幷三唑 四丁基鱗鹽等之四級鱗鹽，1 一氰乙基一 2 —乙基—4 — 甲基咪唑等氮原子含於環內之雜環化合物等。但是，該等 僅爲例示，路易士緘基化合物亦有極多種類，此等路易士 鹹基化合物可單獨或混合多種使用。 封合材料之構成成份，除此以外可因應需要使用溶劑 ，分散劑，均勻劑等之流變學調整劑或偶合劑等之密接性 改良劑，硬化觸媒等之反應調整劑。 本發明所使用之胺化合物等之路易士鹹基化合物所構 成之流變學改良劑，通常可做爲聚環氧化物與羧酸酐硬化 之際的硬化觸媒使用。 但是，使該流變學改良劑作爲封合材料之硬化觸媒使 用之情形，即使在低溫保管中亦會使反應進行而膠化，故 封合材料在使用之前須爲混合使用之二液性型。一方面， 本紙張尺度適用中國國家橾準（CNS ) Α4規格（21 Of 297公釐)~- 22 ~ ： 一 ---------装--------玎一-----^ (請先閱讀背面之注意^項再填寫本頁) 經濟部中央橾準局負工消费合作社印製 Λ 7 ______87 五、發明説明（2〇 ) L S I用之封合材料，塡料須爲多纛均勻分敝，故成爲— 液體型爲不可或缺者。 亦即，本發明所謂之流變學改良劑，雖可用於二液性 封合材料之硬化觸媒，卻不用於一液性封合材料。 一方面，在保管中，降低添加纛使用使不致膠化之程 度時，並非不逋用於一液性封合材料之硬化觸媒，而在此 情形，由於硬化促進機能會過低，故實用上之硬化條件， 無法獲得高度之封合材料硬化特性。 本發明之特徽係在於：使用潛在性硬化觸媒作爲合併 一液性之保存安定性及實用的硬化促進機能用之硬化觸媒 ，將作爲胺等通常二液性封合材料之硬化觸媒使用之物質 ，作爲流變學改良劑使用。此等流變學改良劑，爲不發揮 硬化機能程度之微置，係僅添加可改善界面特性程度之量 而已。 但是，潛在性硬化觸媒係賦予熱等之能置，可稱爲急 遽提高觸媒活性之觸媒，通常添加能置時會熔融（液化） ，或反應解離，而使活性提高。 由上述觀點，封合材料之組成及封合材料中之樹脂粘 合劑，有下述組成比者較佳。 樹脂粘合劑 8 0〜2 5重量％ 塡料成分 20〜75重1: % 但是爲樹脂粘合劑中成分之聚環氧化物，羧酸酐，硬 本紙張尺度適用中國國家標率（CNS ) A4規格（210f 297公釐)~. 〇3 - --：--^-----裝------^訂-----線 (請先閲讀背面之注意事項再填寫本頁) B7 B7 經濟部中央標率局負工消费合作'ft印製 五、發明説明（21 ) 化觸媒及觸變性改良劑，具有下述成分比者蛟佳。 羧酸酐/聚環氧化物 0 . 8〜 1 . 1當量比 硬化觸媒/樹脂粘合劑 0 . 3〜 3重董％ 流變學改良劑/樹脂粘合劑 0 . 02〜0 . 3重 1: % 一方面，關於基板6 ，除了氧化鋁等之陶瓷基板外， 亦可逋用金屬上紬基板，玻璃基板，玻瑪環氧等之樹脂基 板，聚合物薄膜基板等材質之基板。 又，端竃極5之材質並無格外限制。 其次，爲調査上述倒裝片安裝製程所得半導髏裝置之 特性而進行之具雔實施例加以說明。 (實施例1 ) 藉上述圖4 (a)〜（e)所示之製程，形成具有上 述圚1所示構造之半導《裝置。其時，沖擊電極3係由鍍 金形成。導電性粘接劑4 a係由以銀鈀粉及可曲性環氧樹 脂爲主成分之組成物所構成，加熱至1 2 0°C並硬化之。 再者，使用下述表1所示配合a之封合材料，在1 5 0°C 使封合林料硬化。 (實施例2 ) 在半導體裝置1之電極襯墊2上以使用金之線接合器 (wire bonder)形成圚3所示柱式冲擊電極1 4。其後 本紙張尺度逋用中國國家標準（CNS ) A4规格（2丨0^<297公釐）-24 - (請先閱讀背面之注意事項再填寫本頁) -裝· *^τ ^05098 A7 B7 經濟部中央標铒局Μ工消#合作社印製 五、發明説明（22 ) 之製程與上述資施例1相同之製程及條件進行。 (實施例3 ) 除了在減壓下進行封合材料之注入以外，其他與上述 實施例1同樣之條件，使半導髏裝置1安裝於基板6。 (實施例4 ) 除了使封合材料之組成成爲表1所示之配合b以外， 與上述實施例2同樣條件，使半導髓裝置1安裝於基板6 0 (實施例5 ) 除了使基板6爲環璃環氧基板，封合材料之組成成爲 表1之配合c以外，其他與上述實施例2同樣之條件下， 安裝半導體裝置1於基板6。 (實施例6 ) 除了使基板6爲玻璃環氣基板，導電性粘接劑4中之 導電粉爲銀粉，封合材料之組成爲表1配合d之組成外， 其他與上述責施例2同樣之條件，將半導髏裝置1安裝於 基板6。 (實施例7 ) 除了基板6爲玻璃基板，導電性粘接劑4爲以銀粉及 本紙張尺度遑用中國國家標準（CNS ) A4規格（210)< 297公釐）_ 25 - --；--.-----装------^訂 I;-----線 (請先閱讀背面之注意事項再填寫本頁) A 7 ____ B7_ 五、發明説明（23 ) 胺基甲酸乙酯樹脂爲主成分，封合材料之組成爲表1之配 合e，封合材料之注入在滅壓下進行以外，其他與上述賨 6 板 基 於 裝 安 1 « 裝 體 導 半 使, 下 件 條 樣 同 在 2 例 施 置 裝 髖 導 半 於 成 形 3 極 « 擊 沖 將 金 鍍 以, 示 所 8 1 例圖 施如 實 及 程 製 同 相 7 例 施 實 。 與上 係 6 程板 製基 之於 後 1 其置 。 裝 上體 2 導 墊半 襯裝 極安 電下 之件 1 條 比 例 施 賁 與 他 其 > ο 外 6 以板 f 基 合於 配 1 之置 1 裝 表雠 爲導 成半 組裝 之安 料， 材件 } 合條 1 封樣 例了同 較除 2 與 餘 其 外 以 S 合 配 之 IX 表 爲 成 組 之 料 材 ) 合 2 封 例了 較除 比 板容 基內 於之 置 g 裝？ 體 a 導合 半配 裝述 安上 ， 示 件表 條係 樣 1 同表 2 述 例下 施 實 (請先閲讀背面之注意事項再填寫本頁) -裝·Su5〇9§ B7. Member of the Central Standards Bureau of the Ministry of Economic Affairs X Consumer Cooperative Ind. V. Invention description (15) First, in step ST1, use the AU line in each of the semi-continuous snakehead device 1 (LS I chip) "polar pad 2 A pillar impact electrode 14 is formed, and at step ST 2, each pillar impact electrode 14 is stubbed, and a uniform process for pushing a flat surface is performed to make the position of the front end surface of each pillar impact electrode 14 consistent. Next, in step ST3, as shown in FIGS. 4 (a) to (c), the semiconductor device 1 is positioned on the substrate 2 coated with the conductive adhesive 4a with the column impact electrode 14 side facing downward 0 above, the state is lowered, so that the column impact "pole 1 4 is immersed in the conductive adhesive 4 a, then the semi-conductor device is raised to the top, so that the conductive adhesive 4 a- Transfer to each column impact electrode 14. Next, in steps ST4 and ST5, as shown in FIG. 4 (d), the semiconductor device 1 is mounted on the ceramic substrate 6 provided with a plurality of terminal electrodes 5. At this time, the pillar impact electrodes 14 of the semiconductor device 1 and the terminal electrodes 5 on the substrate 6 are aligned with each other, and the conductive adhesive layer 4 is formed by heating and curing the conductive adhesive. As a result, the column impact electrode 14 of the semiconductor device 1 and the terminal electrode 5 of the substrate 6 are electrically connected. Next, check the connection status at step ST6. If the electrical connection status is poor (NG), perform the (semiconductor device) exchange at step ST7 and return to step ST 4. The state of the sexual connection is good (at 0K), then proceed to step ST8. Next, in step ST8, a composition with a low viscosity (1 0..0 meal · sec or less) and a low thixotropy index (1.1 or less) The resulting sealing material is injected into the gap between the semiconductor device 1 and the substrate 6 at room temperature, and after the resin sealing of the connection portion is performed, in step ST 9, heating is performed in the sealing material -----.-- --- installation ------ ^ order 丨 · ----- line (please read the precautions before filling in this page) This paper uses the Chinese «Family Support Standard (CNS) A4 specification ( 210JC297 Public Teacher) Jg-Ministry of Economic Affairs Central Standard Falcon Bureau H Industry Consumption " Working ^ Printing and Burning B7 ~ " ~ ~ ~ — ~ — ~ ........... * · —1 V. Description of Invention (16) The resin adhesive is hardened. At this time, as shown in Fig. 4 (e), the sealing layer 7 is formed, whereby the sealing layer 7 mechanically joins the semiconducting bun device 1 and the substrate 6. Thereafter, Step ST1 0, perform the most Final inspection to complete the flip chip mounting process. The sealing material used in the above flip chip mounting process, because of the low viscosity and low thixotropy index, so the injection of the sealing material can be performed quickly even at room temperature and low temperature At the same time, the sealing material can be fully performed even in a small gap. Therefore, the time required for the sealing can be shortened, and at the same time, the connection reliability of the joint portion connected through the adhesive 4 can be maintained. Furthermore, the sealing material is The fluidity-improving anhydride-cured epoxy resin and fused silicon (hused sn-ica) fillers are the main components of the composition, so the thermal expansion rate after curing is also low. As a result, the thermal expansion rate of the sealing layer 7 is low Therefore, it is possible to suppress the thermal stress caused by the difference in thermal expansion rate between the silicon substrate constituting the semiconductor device 1 and the aluminum oxide substrate constituting the substrate 6. Furthermore, the sealing material composed of these ring gas resins has high heat resistance and adhesion The strength is high, so stable connection reliability can be achieved even in a high temperature and high humidity environment. In addition, since the conductive connection agent 4 has a high degree of flexibility, it can relax thermal stress and can also improve connection stability. As described above, according to the above-mentioned flip chip mounting process, the semi-conducting skull device 1 and the substrate 6 can be stably connected with extremely high reliability. In addition, in the embodiment, the impact electrode 3 'is made of gold, but it is not limited The material is made of gold, such as copper and other gold drives. Also, the shape of the impact electrode is not limited to the above-mentioned column impact electrode, and it is generally used for flip chip mounting. However, use Figures 3 and 4 This paper uses the Chinese National Standard (CNS) Α4 specification (2U «K 297 mm) -19-: ------ installed ------ 'ordered-*- --- Line f, please read the precautions on the back first and then fill out this page) Ministry of Economic Affairs, Central Standards Bureau, S Industry Consumer, including Zuosha Printing A7 B7 5. Invention description (17) (a) ~ (e) The impact electrode can suppress the diffusion of the conductive adhesive layer 4 in the lateral direction, so that the mounting density can be greatly improved. In addition, the material of the conductive adhesive 4 is not limited to the ring gas system, and if it is flexible, the material is not limited. For example, rubber systems such as SBR, NBR, IRBR, CR, etc., acrylic systems, polyester systems, polyamide systems, polyether systems, polyurethane systems, polyimide systems, silicone systems, etc. The material of the conductive powder contained in the conductive adhesive can be any general purpose, such as precious metal powders such as silver, gold and palladium, base metal powders such as nickel and copper, welding, alloy powders such as silver palladium, and silver plating Composite powder such as copper powder, etc. Furthermore, conductive non-metal powder such as carbon can be used. These conductive powders can be used alone or in combination of two or more. In addition, these conductive powders are not particularly limited in particle size, shape 0-the sealing material is mainly composed of a resin binder and filler, and the resin binder is made of polyepoxide and anhydride and rheology Learning modifiers are essential ingredients. The polyepoxide in the resin binder used here is not particularly limited, and it is usually called epoxy compound, epoxy resin, for example, as shown in Figure 6, the bisphenol represented by the general structural formula Epoxy resin novolac epoxy resin, glycidyl ether epoxy resin, glycidyl ester epoxy resin, glycidyl amine ring gas resin, alicyclic epoxy resin, biphenyl epoxy resin, certain type Epoxy resin, styrene oxide, alkyl glycidyl ether, alkyl glycidyl ester, etc. These can be used alone or in combination of two or more. In addition, the acid anhydride used here can generally be used as a hardener for epoxy compounds and epoxy resins. The best example is to use the Chinese boudoir standard rate (CNS) A4 specification (21〇7 < 297mm) with the paper format shown in FIG. 7: 20-" " " ": * Line booking (please read the precautions on the back before filling in this page) Central Bureau of Standards of the Ministry of Economic Affairs: «Industrial and Consumer Cooperation Cooperative Printed 305098 A7 B7 V. Description of Invention (IS)-General structure of the third embankment four Hydrophthalic anhydride. In addition, other preferred examples include cyclic aliphatics such as methyltetrahydrophthalic anhydride, methylhexahydrophthalic acid liver, and methylhemic acid liver (ra ethyhymicacida π hydride). It is a liquid concoction at 2 5 ° C. But it is not limited to this. These can be used alone or in combination of two or more. In particular, by using the above as the main component of a resin binder, a sealing material with high heat resistance, high moisture resistance, and high adhesion can be obtained at a very low viscosity. In addition to the above-mentioned essential components, the resin adhesive of the sealing material is the third adhesive for the purpose of improving heat resistance, improving moisture resistance, improving adhesion strength, thermal expansion rate adjustment, rheology adjustment, reactivity adjustment, etc. The composition of the agent can be added to the material of the β sealing material as needed. If it is a powder skeleton with an average particle size of 1 ~ 5 0 // m, it does not matter. The preferred examples are oxidized compounds such as silica and alumina or aluminum nitride. Such as nitrides, carbides such as silicon carbide, silicides, etc., thermal stability and low thermal bulging rate are expected. These ingredients can be used even if they are any combination of two or more. The amount of the filler is not particularly limited, and the weight ratio is preferably 20 to 80% relative to the total amount of the sealing material. By using these materials, a sealing material with excellent insulation and little thermal stress can be realized. Also, as a rheology modifier that improves the fluidity of the sealing material, if it has the function of cutting off the interaction between the free acid in the anhydride and the polar group on the surface of the base material, and has the effect of reducing the thixotropy index of the sealing material, there is no method. Special limit-one binding line (please read the precautions on the back before filling in this page) This paper standard is universal Chinese U standard (CNS ..) 84 specifications (210j (297 mm): 21 Central Bureau of Standards of the Ministry of Economic Affairs A7 __ B7 printed by Employee Consumption Co., Ltd. V. Description of the invention (19) The preferred examples are: (1) Pre-mix part of acid anhydride and filler, and etch (heating to 100 τ or less can also etch) After adding polyepoxy compounds and residual materials and other additives to obtain the sealing material. (2) The method of selectively adsorbing free acid in the anhydride to the sealing material. (3) It is stronger than the polar group on the surface of the material, and it will generate a substance that interacts with the free acid (the Lewis salt-free compound that does not contain the N-H group, the O-H group, etc.) is added to the sealing material. However, the so-called Louis The salty compounds include tertiary amine compounds, tertiary phosphine compounds, quaternary ammonium salts such as tetrabutylammonium bromide, quaternary quaternary salts such as benztriazole tetrabutyl quaternary salts, 1 monocyanoethyl-2 —Ethyl—4—heterocyclic compounds containing a nitrogen atom such as methylimidazole in the ring, etc. However, these are only examples, and there are also many types of Lewis halo compounds, and these Lewis halo compounds can be used alone It can be used in combination of multiple types. In addition, the components of the sealing material can be used to adjust the reaction of the rheology modifiers such as solvents, dispersants, leveling agents, etc., the adhesion modifiers such as coupling agents, and the curing catalysts. The rheology modifier composed of Lewis salt compounds such as amine compounds used in the present invention can usually be used as a curing catalyst when polyepoxides and carboxylic acid anhydrides are hardened. When the modifier is used as a hardening catalyst for the sealing material, the reaction will proceed and gel even when stored at a low temperature, so the sealing material must be a mixed two-liquid type before use. On the one hand, Paper size Use China National Standard (CNS) Α4 specifications (21 Of 297mm) ~-22 ~: One ----------------------------- ^ ( Please read the notes on the back ^ item before filling out this page) Printed by the Ministry of Economic Affairs Central Bureau of Accreditation Consumer Cooperatives Λ 7 ______87 V. Description of Invention (2〇) Sealing materials for LSI, the materials must be uniform Separate, so it becomes-the liquid type is indispensable. That is, the so-called rheology modifier of the present invention can be used for the hardening catalyst of the two-component sealing material, but it is not used for the one-component sealing material On the one hand, in storage, when reducing the degree of use to prevent gelation, it is not that it is not used as a hardening catalyst for one-liquid sealing materials. In this case, the hardening promotion function is too low, so In practical hardening conditions, a high degree of hardening properties of the sealing material cannot be obtained. The special feature of the present invention is that the latent curing catalyst is used as the curing catalyst for combining one-component preservation stability and practical hardening promotion function, and it will be used as the curing catalyst for ordinary two-component sealing materials such as amines. The substance used is used as a rheology modifier. These rheology modifiers are added only in an amount that can improve the interface characteristics in order not to exert a slight degree of hardening function. However, latent hardening catalysts give energy such as heat, which can be referred to as a catalyst that sharply improves the activity of the catalyst. Usually, when it is added, it will melt (liquefy) or dissociate when the energy is released, thereby increasing the activity. From the above viewpoint, the composition of the sealing material and the resin binder in the sealing material are preferably the following composition ratios. Resin adhesive 8 0 ~ 2 5 wt%. Ingredients 20 ~ 75 weight 1:%. But it is polyepoxide, carboxylic anhydride, and hard paper of the resin binder. The Chinese standard rate (CNS) is applicable A4 specification (210f 297mm) ~. 〇3--:-^ ----- installed ------ ^ order ----- line (please read the precautions on the back before filling in this Page) B7 B7 Printed by the Ministry of Economic Affairs Central Standardization Bureau's Consumer Labor Cooperation'ft. V. Description of the invention (21) Chemical catalyst and thixotropy improver, with the following ingredients better than Jiao. Carboxylic anhydride / polyepoxide 0.8 to 1.1 equivalent ratio hardening catalyst / resin binder 0.3 to 3 weight% Rheology modifier / resin binder 0.22 to 0.3 weight 1:% On the one hand, for the substrate 6, in addition to ceramic substrates such as alumina, metal substrates, glass substrates, resin substrates such as Boma epoxy, and polymer film substrates can also be used. In addition, the material of Duankun pole 5 is not particularly limited. Next, an example of a carcass that was conducted to investigate the characteristics of the semi-conducting skull device obtained by the above-mentioned flip chip mounting process. (Embodiment 1) By the process shown in Figs. 4 (a) to (e) above, a semiconducting device having the structure shown in the above F1 is formed. At this time, the impact electrode 3 is formed by gold plating. The conductive adhesive 4a is composed of a composition mainly composed of silver-palladium powder and flexible epoxy resin, and is heated to 120 ° C and hardened. Furthermore, using the sealing material blended with a shown in Table 1 below, the sealing forest material was hardened at 150 ° C. (Embodiment 2) On the electrode pad 2 of the semiconductor device 1, a pillar-type impact electrode 14 shown in the above-mentioned 3 is formed using a wire bonder of gold. Afterwards, the paper size adopts the Chinese National Standard (CNS) A4 specification (2 丨 0 ^ < 297mm) -24-(please read the precautions on the back and then fill in this page) -installed * ^ τ ^ 05098 A7 B7 Printed by the Ministry of Economic Affairs, Central Standard Erbium Μ 工 消 # Cooperative. V. Invention description (22) The process is the same as the above-mentioned process and conditions of Example 1. (Embodiment 3) The semiconductor device 1 was mounted on the substrate 6 under the same conditions as in Embodiment 1 except that the sealing material was injected under reduced pressure. (Example 4) The semi-conducting device 1 was mounted on the substrate 6 0 under the same conditions as in the above Example 2 except that the composition of the sealing material was the compound b shown in Table 1. (Example 5) Except for the substrate 6 It is a glass epoxy substrate, and the composition of the sealing material is the compound c in Table 1, and the semiconductor device 1 is mounted on the substrate 6 under the same conditions as in the above-mentioned second embodiment. (Example 6) The same as Example 2 above except that the substrate 6 is a glass ring gas substrate, the conductive powder in the conductive adhesive 4 is silver powder, and the composition of the sealing material is the composition of Table 1 in combination with d. Conditions, the semiconductor device 1 is mounted on the base plate 6. (Example 7) Except that the substrate 6 is a glass substrate, the conductive adhesive 4 adopts the Chinese National Standard (CNS) A4 specification (210) < 297 mm in silver powder and the size of the paper _ 25--; --.----- Install ------ ^ Subscribe I; ----- line (please read the precautions on the back before filling in this page) A 7 ____ B7_ V. Description of the invention (23) Amine The urethane resin is the main component, and the composition of the sealing material is compound e in Table 1. The injection of the sealing material is carried out under pressure relief. Other than the above 6 plates, it is based on the installation safety. The next sample is the same as that in 2 cases where the hip guide half was formed in the shape of 3 poles. The impact was plated with gold, and 8 cases were shown to be true and 7 cases were in phase. It is based on the 6-chip board system, which is based on the latter one. Attach the upper body 2 with the guide pad half-lined and fitted with a piece of extremely safe electricity. 1 ratio of Shi Ben and others> ο outer 6 is based on the plate f and is matched with the 1 set 1. The watch is a guide for semi-assembly. , Material} 1 sample of the seal is compared with the other than 2 and the other is the IX table with S matching as a group of materials) 2 seals are compared with the g ? Body a guide half-matching installation description is attached, the indicator table is the same as the description in table 2 and is implemented under the example (please read the precautions on the back before filling this page) -installation

，1T 經濟部中央標华局^;工消fA.,-作.-ft印裝 本紙張尺度適用中國闺家橾準（CNS ) A4规格（21(>丨297公釐） -26 - A7 B7, 1T Ministry of Economic Affairs, Central Standardization Bureau ^; Gongxiao fA.,-Made.-ft printed paper size is suitable for Chinese boudoir (CNS) A4 specifications (21 (& 297 mm) -26-A7 B7

五、發明説明（24 ) 表 I 配合a:雙酚F型環氧樹脂環氧當量162) 雙酚A型環氣樹脂i環氧當量182ί 三烷基四氫鄰苯二甲酸酐(酸酐當量234) 2-(2-甲基咪唑基乙基)-4,6-二氨基三滕-三聚異氰餘添加物 二氮雙環十一烯 熔絲矽 85phr 15phr 126phr 1.6phr 0.lphr 340phr 配合b:三烷基四氫鄰苯二甲酸酐(酸酐當量234) 混煉上述二材料在6(TC蝕刻10小時 其後添加下述材料 雙酚F型環氧樹脂ζ環氧當置162〉 雙酚Α型環氧樹脂ί環氧當置182$ 2-(2-甲基咪唑基乙基）-4,6-二氨基三瞭-三聚異氰破添加物 卜氛乙基-2-乙基-4-甲基咪唑 126phr 340phr 85phr 15phr 1.6phr 0.2phr 配合c:雙酚F型環氧樹脂(環氧當置162) 80phr 脂環型環氧樹脂(ERL4221) * 20phr 三烷基四氫鄰苯二甲酸酐(酸酐當量234) 135phr Araikyua PN* * 5phr 澳化四丁基銨 0.2phr 熔絲矽 400phr 3 2 量 xk 22X1 68ff IX 置IMS* 當當酐* 氧氧酸* 環環甲00盥脂脂iili 樹&rxl ssmD 四 H四AR唑 is 基 Ji 酚酚烷JI幷絲 :||雙三FU苯熔 d 合 配 4 90phr lOphr 128phr 5phr 0.2phr 350phr 配合e:雙酚F型環氧樹脂(環氧當量162) 棻型環氧樹脂(環氧當量148) 三烷基四氬鄰苯二甲酸酐(酸酐當置234) 四氫鄰苯二甲酸酐(酸酐當置166) 三苯基膦三苯基硼酸酯 苯幷三唑四丁基锇鹽 熔絲矽 70phr 30phr 82phr 40phr 3,6phr 0.2phr 225phr J 批衣 訂 線 (請先閲讀背面之注意事項再填寫本頁) 經濟部中失標準局N工消费V-作杜印製 配合f:雙酚F型環氧樹脂環氧當置162丨 雙酚A型環氧樹脂ΐ環氧當量182^ 三烷基四氫鄰苯二甲酸酐（酸酐當量234) 2-(2-甲基咪唑基乙基）-4,6-二氨基三嗪-三聚異氰鉍添加物 熔絲矽 85phr 15phr 126phr 1,6phr 340phr 配合g:雙酚F型環氧樹脂(環氧當量162) 烷基轉化樹脂(羧酸酐當量113) 三苯基膦 熔絲矽 lOOphr 70phr 0.6phr 255phr * :UCC公司製 * * :味之素公司製 * * * :富士化成公司製 本紙張尺度遙用中國國家揉準（CNS ) A4規格（210j<297公釐） 27 - 經濟部中"慄準局消费合作.#-印?1 Μ _____Β7五、發明説明（25 ) (比較例3 ) 以習知例圚9所示方式，安裝半導體裝置丨於基板6 。此時，使用氧化鋁基板作爲基板6 ，以金形成沖擊電極 3，在端«極5施予鍍銦。在使沖擊鼇極3及端電極5對 正位置後，以工具（jig )加壓半導體裝置1並加熱至 1 7 0°C，使沖擊電極3及端電極5連接。再者，在半導 體裝置1及基板6之間陳，注入矽封合材料（無應力型） 使之硬化，而形成封合層1 0。 (比較例4 ) 以習知例之圚10所示方式使半導饅裝置1安裝於基 板6。此時，以金形成沖擊電極3，在端電極5上形成鍍 金層1 1，在其上塗覆丙烯系封合材料。使沖擊電極3及 端電極5對正位置後，以工具加壓半導體裝置1並以紫外 線照射或加熱硬化封合材料，形成封合層1 2。 (比較例5 ) 以習知例圖1 1所示方式安裝半導證裝置1於基板6 上。此時，以金形成沖擊《極3，以氧化鋁構成基板6。 在環氧系粘合劑中使金粒子分散之各向異導電性粘接劑塗 覆於基板6上。在使沖擊氰極3及端電極5對正位置後， 以工具加壓半導體裝S1，並以紫外線照射或加熱使各向 異導電性粘接劑硬化，形成各向異導電性粘接層1 3，並 使沖擊電極3及端電極5電性地且機械性地連接。 本紙張尺度通用中國國家標半（CNS > A4規格（2丨0X297公釐）-28 · ' ^ I Ί9 ml 裝 I I 訂 n I I I 線 (請先閲讀背面之注意事項再填寫本頁) 經濟部中央櫺準局貞工消资合作社印製 粘度 ：以E型粘度計測定25°C lOrpm 觸變性指數：以E型粘度計測定25°C lrpn^lOrpm 注入時間 ：在25°C封合5mm角晶片之半導體所要時間 A7 B7 五、發明説明（26 ) 使用於實施例1〜8，比較例1〜5所示之半導《裝 置之封合材料之粘度及觸變性指數，及封合材料注入所要 之時間係如下表2所示。 表2 粘度 觸變性 指 數 注入時間 資施例1 , 2 配合a 7Pa · s 1.0 3 . 5分 實施例3 配合a 7Pa * s 1.0 0 · 4分 實施例4 配合b 8 P a · s 0 . 9 3分 實施例5 配合C 4 P a · s 1.0 2.3分 實施例6 配合d 5Pa · s 1.0 2 . 5分 實施例7 , 8 配合e 1 1 P a * s 1,0 0 . 6分 比較例1 配合f 7Pa · s 4 . 8 100分 以上 比較例2 配合g 120Pa · s 1 . 3 45分 本紙張尺度適用中S®家棣率（CNS ) Μ规格（210〆297公釐） -29 - I I I I Ml I I I I 訂—— 線 (請先閲讀背面之注意事項再填寫本頁)V. Description of the invention (24) Table I Compound a: bisphenol F epoxy resin epoxy equivalent 162) bisphenol A type ring gas resin i epoxy equivalent 182ί trialkyltetrahydrophthalic anhydride (acid anhydride equivalent 234 ) 2- (2-Methylimidazolylethyl) -4,6-diaminotriten-trimeric isocyanurate additive diazabicycloundecene fuse silicon 85phr 15phr 126phr 1.6phr 0.lphr 340phr mix b : Trialkyltetrahydrophthalic anhydride (anhydride equivalent 234) Kneading the above two materials at 6 (TC etching for 10 hours, then adding the following materials bisphenol F type epoxy resin ζ epoxy equivalent 162> bisphenol Α type epoxy resin epoxy 182 $ 2- (2-methylimidazolylethyl) -4,6-diaminotri-triisocyanate break additive Bufen ethyl-2-ethyl -4-methylimidazole 126phr 340phr 85phr 15phr 1.6phr 0.2phr compounding c: bisphenol F type epoxy resin (epoxy resin 162) 80phr alicyclic epoxy resin (ERL4221) * 20phr trialkyltetrahydrophthalene Dicarboxylic anhydride (anhydride equivalent 234) 135phr Araikyua PN * * 5phr tetrabutylammonium 0.2phr fuse silicon 400phr 3 2 quantity xk 22X1 68ff IX IMS * Dangdang anhydride * oxyacid * cyclomethanol 00 grease iili tree & rxl ssmD four H four AR Azole is based Ji phenol phenol alkyl JI wire: || tris FU benzene melt d compound 4 90phr lOphr 128phr 5phr 0.2phr 350phr compound e: bisphenol F type epoxy resin (epoxy equivalent 162) 梻 type epoxy resin (Epoxy equivalent 148) Trialkyltetrahydrophthalic anhydride (anhydride equivalent 234) Tetrahydrophthalic anhydride (anhydride equivalent 166) Triphenylphosphine triphenylborate benztriazole tetra Butyl osmium salt fuse silicon 70phr 30phr 82phr 40phr 3,6phr 0.2phr 225phr J Apparel binding line (please read the precautions on the back before filling in this page) Ministry of Economic Affairs Standards and Loss Bureau N Industrial Consumption V-For Du printed Mixing f: bisphenol F epoxy resin epoxy equivalent 162 丨 bisphenol A epoxy resin l epoxy equivalent 182 ^ trialkyltetrahydrophthalic anhydride (anhydride equivalent 234) 2- (2-methyl Imidazolylethyl) -4,6-diaminotriazine-trismuth isocyanide bismuth additive fuse silicon 85phr 15phr 126phr 1,6phr 340phr compounding g: bisphenol F type epoxy resin (epoxy equivalent 162) alkane Base conversion resin (carboxylic anhydride equivalent 113) triphenylphosphine fusible silicon 100 phr 70 phr 0.6 phr 255 phr *: UCC company made * *: Ajinomoto company made * * *: Fuji Chemical Co., Ltd. paper size is in use National Kneading Standard (CNS) A4 specification (210j < 297mm) 27-The Ministry of Economic Affairs " Kuri quasi-bureau consumer cooperation. #-印? 1 Μ _____ Β7 V. Description of invention (25) (Comparative Example 3) In the manner shown in Example 9, the semiconductor device is mounted on the substrate 6. At this time, an alumina substrate was used as the substrate 6, the impact electrode 3 was formed of gold, and indium plating was applied to the terminal 5. After the impact claw 3 and the terminal electrode 5 are aligned, the semiconductor device 1 is pressed with a jig and heated to 170 ° C to connect the impact electrode 3 and the terminal electrode 5. Furthermore, between the semiconductor device 1 and the substrate 6, a silicon sealing material (non-stress type) is injected and hardened to form a sealing layer 10. (Comparative Example 4) The semi-conducting steamed bread device 1 was attached to the base plate 6 as shown in the conventional example No. 10. At this time, the impact electrode 3 is formed of gold, a gold plating layer 11 is formed on the terminal electrode 5, and an acrylic sealing material is coated thereon. After the impact electrode 3 and the terminal electrode 5 are aligned, the semiconductor device 1 is pressed with a tool, and the sealing material is irradiated with ultraviolet rays or heated to harden to form a sealing layer 12. (Comparative Example 5) The semiconductor device 1 was mounted on the substrate 6 in the manner shown in Fig. 11 of the conventional example. At this time, the impact electrode 3 is formed with gold, and the substrate 6 is formed with aluminum oxide. The substrate 6 is coated with an anisotropic conductive adhesive in which gold particles are dispersed in an epoxy-based adhesive. After the impact cyanode 3 and the terminal electrode 5 are aligned, the semiconductor device S1 is pressed with a tool, and the anisotropic conductive adhesive is cured by ultraviolet irradiation or heating to form the anisotropic conductive adhesive layer 1 3. The impact electrode 3 and the end electrode 5 are electrically and mechanically connected. The size of this paper is universal China National Standard (CNS &A; A4 specification (2 丨 0X297mm) -28 · '^ I Ί9 ml Pack II Order n III line (please read the precautions on the back and fill in this page) Ministry of Economic Affairs Printed viscosity by the Chugong Prefectural Bureau of Industry and Commerce Cooperative: measured with an E-type viscometer at 25 ° C lOrpm Thixotropy index: measured with an E-type viscometer at 25 ° C lrpn ^ lOrpm Injection time: 5mm angle sealed at 25 ° C The time required for the semiconductor of the chip A7 B7 5. Description of the invention (26) Used in the semiconductors shown in Examples 1 to 8, Comparative Examples 1 to 5, "Viscosity and thixotropy index of the sealing material of the device, and the injection of the sealing material The required time is shown in the following Table 2. Table 2 Viscosity thixotropy index injection time: Example 1, 2 with a 7Pa · s 1.0 3 .5 points Example 3 with a 7Pa * s 1.0 0 · 4 points Example 4 Blending b 8 P a · s 0.9 3 points Example 5 Blending C 4 P a · s 1.0 2.3 points Example 6 Blending d 5Pa · s 1.0 2.5 Point 5 Examples 7, 8 blending e 1 1 Pa * s 1,0 0.6 points Comparative Example 1 blend f 7Pa · s 4.8 more than 100 points Comparative Example 2 blend g 120Pa · s 1. 3 45 points The size of this paper is applicable to the S®Furniture Rate (CNS) Μ specification (210〆297mm) -29-I I I I Ml I I I I Order-line (please read the precautions on the back before filling this page)

經濟部中央標隼局只X消f合作社印U S05G98 A7 B7 五、發明説明（27 ) 表3Printed by the Central Standard Falcon Bureau of the Ministry of Economic Affairs only X Xiaof Cooperative Union S05G98 A7 B7 V. Description of the invention (27) Table 3

高溫 放置 低溫 放置 熱衝擊 高濕 放置 軟焊 耐熱 實施例1 〇 〇 〇 〇 〇 實施例2 〇 〇 〇 〇 〇 實施例3 〇 〇 〇 〇 〇 實施例4 〇 〇 〇 〇. 〇 實施例5 〇 〇 〇 〇 〇 實施例6 〇 〇 〇 〇 〇 實施例7 〇 〇 〇 〇 〇 實施例8 〇 〇 〇 〇 〇 比較例1 〇 〇 X 〇 X 比較例2 〇 〇 X 〇 〇 比較例3 〇 〇 X 〇 〇 比較例4 〇 〇 X X 〇 比較例5 X 〇 〇 X X ----.-----批衣------^trl------線 (請先閲讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐）-3〇 - 經濟部申央標卑局員工消費合忭让印裝 A7High temperature storage Low temperature storage Thermal shock High humidity storage Soldering heat resistance Example 1 100,000 Example 2 〇〇〇〇〇 Example 3 〇〇〇〇〇〇 Example 4 〇〇〇〇. 〇 Example 5 〇〇 〇〇〇 Example 6 〇〇〇〇〇 Example 7 〇〇〇〇〇 Example 8 〇〇〇〇〇 Comparative Example 1 〇〇X 〇X Comparative Example 2 〇〇X 〇〇 Comparative Example 3 〇〇X 〇 〇Comparative Example 4 〇〇XX 〇Comparative Example 5 X 〇〇XX ----.----- Bai Yi -------- ^ trl ------ Line (please read the notes on the back first (Fill in this page again) This paper scale is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) -3.-Ministry of Economic Affairs Shenyang Biaobei Bureau Consumer Consumption Allowance Printing A7

____BT 五、發明説明（28 ) 表4 判斷基準 經過各試驗後之連接竃阻値 200ιηΩ以下時爲〇 200mQ以上時爲X 試驗條件 1 髙溫放置試驗 150°C ,1 00011 r經過後之連接電阻 値 低溫放置試驗 •55°C , lOOOhr經過後之連接電阻 値 熱衝擊試驗 150〜-55°C , 500 cyc 1 e經過後之 連接電阻値 高濕度放置試驗 121°C ,10 0%,100hr經過後之連接 m阻値 軟焊耐熱試驗 270°C，10sec,5cycle 經過後之連 接電阻値 以下說明上述各表所示評價之結果。 在實施例1〜8均通過各種可靠度試驗，在連接安定 性亦無問題產生。又，在此所用之封合材料均具有低粘度 (10 0粕•秒以下）且低觸愛性指數（1 .丨以下）， 本紙張尺度適用中國國家標率（CNS ) A4規格（210X297公釐)一1 βΐ - ' I I. I I ；— I I I — ^ I I I I I 訂 I I I 線 (請先閱讀背面之注意事項再填寫本頁) 3050^8 經濟部中央標準局負工消费合作社印裝 本紙張尺度逋用中國國家標準（CNS ) A4规格（210X297公釐） A7 五、發明説明（29 ) 封合材料之封入時間亦短。亦即，不論沖擊氰極之構造， 基板種類，各種添加劑，導霣性粘接劑之種類等，藉使用 低粘度（1 0 0粕•秒以下）且低觸變性指數（1 . 1以 下），封合材料，可得到耐熱衝擊性，耐環境性優異，生 產性高的半導髏裝置之安裝體。 又*在實施例1〜8，流變學改良劑係使用塡料表面 上之極性基比與游離酸相互作用之機能更强之具有與游離 酸相互作用機能之路易士鹹基化合物，該等並非只是改良 流變學，而是以環氧化物與酸酐之反應觸媒作用，可提高 封合材料耐熱性等之對環境性。 —方面，如比較例1，即使在使用低粘度封合材料之 場合，在觸變性指數高之情形，封合材料之注入需要時間 ，其後進行各種可靠度試驗時，在焊接耐熱試驗或熱衝擊 實驗會產生造成斷線之連接部。此係封合材料注入時在封 合材料層氣泡包園，在試驗時封合層所負載之熱應力成爲 不均質，對導電連接部造成損傷之故。 又，即使使用對導電性粘接劑具高可曲性之物，在使 用酚硬化型環氧樹脂系等之高粘度樹脂於封合材料之比例 例2 ，必須使封合材料加熱注入，在注入時出現連接電阻 値變高之連接部。再者，其後經各種可靠度試驗後，在熱 衝擊弑驗中連接部不安定之處會有產生斷線之情形。此係 因封合材料之粘度高，因封合材料注入時之應力，使導電 性粘接劑之接合部損傷之故。 在比較例3 ，4 ，熱衝擊試驗中連接在比較短的時間 32 - — ^ I I裝 i I 訂 線 (請先閱讀背面之注意事項再填寫本頁) 305098 A7 B7 經濟部中央標準局員工消资合作ΐκ印製 五、發明説明（30 ) 內斷線。又在比較例4，在高濕度試驗中或焊接耐熱性試 驗中連接電阻値之變化大。該等理由被認爲在比較例3 ， 因接合部無法緩和熱應力，故會產生斷線。又，在比較例 4，可認爲是封合材料產生之熱應力大，和封合材料之吸 水率高之故。 在比較例5，在高溫放置試驗，高灘度放置試驗及焊 接耐熱試驗中連接電阻値之上升顯著。此係因各向異導《 性連接劑之粘合劑耐濕性低與高溫之密接性低之故。又， 在耐濕性高的粘合劑所構成之使用各向異導電性連接劑之 情形，在热衝擊試驗中會產生連接部之斷線。 由該等評價結果可知，本發明半導髏裝置之安裝髏， 即使在任何環境亦可得到高可靠度。但是，習知之樹脂粘 合劑，含有聚環氧化物及酸酐（硬化劑）者，一般並不作 爲習知導電性粘接劑之倒裝片安裝製程中之封合材料使用 。其理由爲，若將聚環氧化物及酸酐（硬化劑）所成之樹 脂粘合劑作爲半導體裝置之安裝中之封合材料使用時，由 於封合材料之觸變性指數變高，故會產生只能注入於半導 體裝置及基板間隙之一部分之問題。 因此，本發明首先構想出解決觸變性指數高的問題， 究明係因含於酸酐中游離酸及絕緣性塡料（塡充料fille-r)表面上極性基間相互之作用。此問題可藉謀求阻礙該 相互作用之手段而解決。 又，樹脂粘合劑雖含有聚環氣化物及酸酐（硬化劑） 卻並不使用於習知封合材料之另一理由，係聚環氧化物及 本紙張尺度遑用中國國家標準（（:他）戍4说格（2丨0?<297公釐> 33 (請先閱讀背面之注意事項再填寫本頁) .装· Λ 7 Β7 經濟邹中央標隼局β工消费合作杜印裝 五、發明説明（31 ) 酸酐（硬化劑）所成之樹脂粘合劑在高濕度雰園中，產生 水解係爲周知，若使其作爲封合材料使用，會產生導m性 粘接劑之連接的耐濕性，可靠度的問題。 因此，本發明係如上述各實施例所示，將酸酐（尤其 是三烷基四乙烯基氫鄰苯二甲酸肝爲主成分者）作爲硬化 劑使用之樹脂粘合劑，在半導«倒裝片安裝製程中作爲封 合材料使用，所形成之封合餍具有十分耐用之耐濕性。又 以如此組成之樹脂粘合劑爲主成分之封合材料，粘度低且 觸變性指數低，故即使在室溫程度之低溫狀態下注入，亦 具有可迅速浸透於小間陳之良好特性。因此，由該等特性 可發揮高耐熱衝擊性等各種優異的特性。 相對於此，使表1之配合f所成樹脂粘合劑使用於倒 裝片安裝製程之習知半導體裝置之安裝體，由於封合材料 具有高觸變性指數，故在封合層氣泡包圍之焊接耐熱試驗 或熱衝擊試驗時會使導電連接部受損。又使表1之配合g 所成之樹脂粘合劑使用於倒裝片安裝製程之習知半導饑裝 置之安裝»，由於具有高粘度，故使樹脂粘合劑加熱至 7 0〜8 0°C左右之狀態下有注入之必要，故在導電連接 部會使受損之耐衢擊特性惡化。 (請先閱讀背面之注意事項再填寫本頁) i 、-» 本紙張尺度通用中國國家橾孳（（:NS ) Λ4規格（210X 297公漦）—34 -____BT 5. Description of the invention (28) Table 4 Judgment criteria The connection resistance after each test is 200 Ω or less and it is 〇200mQ or more. X Test conditions 1 High temperature placement test 150 ° C, connection resistance after 1 00011 r Low-temperature storage test • Connection resistance after 55 ° C, 1000hr pass Thermal shock test 150 ~ -55 ° C, 500 cyc 1 e Connection resistance after pass-through High humidity placement test 121 ° C, 100%, 100hr pass After the connection m resistance value soldering heat resistance test 270 ° C, 10sec, 5cycle after the connection resistance value after the following shows the evaluation results shown in the above tables. In Examples 1 to 8 all passed various reliability tests, and there was no problem in connection stability. In addition, the sealing materials used here all have low viscosity (less than 100 meal • sec) and low touch index (below 1. 丨). The paper scale is applicable to China ’s national standard rate (CNS) A4 specification (210X297 1) β 1-'I I. II; — III — ^ IIIII Order III line (please read the notes on the back before filling in this page) 3050 ^ 8 Printed paper size of the Ministry of Economic Affairs Central Standards Bureau Negative Consumer Cooperative Use Chinese National Standard (CNS) A4 specification (210X297mm) A7 5. Description of invention (29) The sealing time of the sealing material is also short. That is, regardless of the structure of the impact cyanide, the type of substrate, various additives, the type of conductive adhesive, etc., by using a low viscosity (100 meal • seconds or less) and a low thixotropy index (1.1 or less) , Sealing material, can obtain the installation body of the semi-conductive skull device with excellent thermal shock resistance, excellent environmental resistance and high productivity. In addition, in Examples 1 to 8, the rheology modifier is a Lewis salt-based compound that has a polar group on the surface of the base material that interacts more strongly with the free acid and has a function of interacting with the free acid. It is not just to improve the rheology, but to use the reaction catalyst of epoxide and acid anhydride to improve the heat resistance of the sealing material to the environment. On the other hand, as in Comparative Example 1, even when a low-viscosity sealing material is used, in the case of a high thixotropy index, it takes time to inject the sealing material, and when various reliability tests are performed thereafter, the welding heat resistance test or heat The impact test will produce a connection that causes disconnection. This is because the sealing material layer is surrounded by bubbles during the injection of the sealing material. During the test, the thermal stress carried by the sealing layer becomes inhomogeneous, causing damage to the conductive connection. In addition, even if a highly flexible material is used for the conductive adhesive, in the case of using a high-viscosity resin such as a phenol-cured epoxy resin in the sealing material, the sealing material must be heated and injected. A connection portion where the connection resistance value becomes high during injection appears. In addition, after various reliability tests, the connection part may be disconnected during the thermal shock test. This is because the viscosity of the sealing material is high, and the joint portion of the conductive adhesive is damaged due to the stress when the sealing material is injected. In Comparative Examples 3 and 4, the thermal shock test was connected in a relatively short time 32-^ II installed i I booked (please read the precautions on the back before filling this page) 305098 A7 B7 Ministry of Economic Affairs Capital cooperation. Printed 5. The description of the invention (30) Disconnected internally. Also in Comparative Example 4, the change in the connection resistance value in the high humidity test or the soldering heat resistance test was large. For these reasons, it is considered that in Comparative Example 3, since the thermal stress cannot be relieved by the joint, disconnection may occur. Furthermore, in Comparative Example 4, it is considered that the thermal stress generated by the sealing material is large and the water absorption rate of the sealing material is high. In Comparative Example 5, the connection resistance value increased significantly in the high-temperature placement test, the high beach placement test, and the solder heat resistance test. This is due to the anisotropy of "the adhesive of the sex connecting agent has low moisture resistance and the high temperature has low adhesion. In addition, in the case of using an anisotropic conductive connecting agent composed of an adhesive with high moisture resistance, the connection part may be disconnected during the thermal shock test. From these evaluation results, it can be known that the installation skull of the semi-conducting skull device of the present invention can obtain high reliability even in any environment. However, conventional resin adhesives, including polyepoxides and acid anhydrides (hardeners), are generally not used as sealing materials in the flip-chip mounting process of conventional conductive adhesives. The reason is that if a resin binder made of polyepoxide and acid anhydride (hardener) is used as a sealing material in the mounting of a semiconductor device, the thixotropy index of the sealing material becomes high, which may cause The problem can only be injected into a part of the gap between the semiconductor device and the substrate. Therefore, the present invention first conceived to solve the problem of high thixotropy index, and it was found that it is due to the interaction between the free acid contained in the anhydride and the polar groups on the surface of the insulating filler (filler-r). This problem can be solved by seeking to impede the interaction. In addition, although resin binders contain polycyclic vapors and acid anhydrides (hardeners), they are not used for other reasons for conventional sealing materials. They are based on polyepoxides and this paper and use Chinese national standards ((: He) 戍 4 said grid (2 丨 0? ≪ 297mm > 33 (please read the precautions on the back before filling in this page). 装 · Λ 7 Β7 Economy Zou Central Standard Falcon Bureau β Industry Consumer Cooperation Duin Fifth, the description of the invention (31) It is well known that the resin binder made of acid anhydride (hardener) produces hydrolysis in a high-humidity atmosphere. If it is used as a sealing material, it will produce a conductive adhesive. The problem of moisture resistance and reliability of the connection. Therefore, as shown in the above embodiments, the present invention uses acid anhydride (especially trialkyltetravinylhydrophthalate as the main component) as a hardener The resin adhesive used is used as a sealing material in the semi-conducting «flip chip installation process, and the formed sealing material has very durable moisture resistance. The resin adhesive thus composed is mainly composed of Sealing material, low viscosity and low thixotropy index, so even at room temperature Injected at a low temperature of a high degree, it also has good characteristics that can quickly penetrate into Komatsu. Therefore, these characteristics can exhibit various excellent characteristics such as high thermal shock resistance. In contrast, the resin formed by the compound f of Table 1 The adhesive is used in the mounting body of the conventional semiconductor device for the flip chip mounting process. Since the sealing material has a high thixotropy index, the conductive connection part will be used during the soldering heat resistance test or thermal shock test surrounded by the sealing layer bubbles Damaged. In addition, the resin adhesive formed by the combination of g in Table 1 is used in the installation of the conventional semi-conducting device for the flip-chip mounting process », because of the high viscosity, the resin adhesive is heated to 7 0 ~ 8 0 ° C is necessary for injection, so the conductive connection part will deteriorate the damaged puncture resistance. (Please read the precautions on the back before filling this page) i 、-»This paper size GM China National Park ((: NS) Λ4 specification (210X 297 Gongluan) —34-

Claims (1)

六、申請專利範圍 1 . 一種半導體裝置之安裝體，其特徼爲具備：具有 電極襯墊之半導體裝置；具有端氰極之基板；設於上述半 導體裝置電極襯墊上之沖擊m極；由具可曲性之導電性粘 接劑所構成，使上述沖擊電極及基板上端電極電性連接之 導電性粘接層；及由粘度1 〇 〇粕·秒以下且觸變性指數 1 . 1以下之組成物予以硬化所構成，埋沒於上述半導髖 裝置及上述基板之間隙使兩者機械性接合之封合層，如此 所構成。 2 .如申請專利範園第1項之半導體裝置之安裝髏， 其中，上述組成物爲至少含有聚環氧化物，羧酸酐，流變 學改良劑及潛在性硬化觸媒之樹脂粘合劑：與絕緣物質所 成之填料爲主成分，上述流變學改良劑具有阻礙上述羧酸 酐中游離酸及上述塡料表面上極性基之相互作用者。 3 .如申請專利範園第2項之半導髏裝置之安裝體， 其中，上述流變學改良劑，含有選擇性吸附羧酸酐中游離 酸之物質。 經濟部中央標率扃員工消费合作社印装 (請先閱讀背面之注意事項再填寫本頁) 4 .如申請專利範園第2項之半導體裝置之安裝體， 其中，上述流變學改良劑爲路易士鹹基化合物° 5 .如申請專利範圔第2項之半導體裝置之安裝體， 其中，上述流樊學改良劑爲環內含有三級胺化合物，三級 膦化合物，四級銨鹽，四級鐃鹽及氮原子之雜環化合物中 之至少一種者。 6 .如申請專利範園第2項之半導髏裝置之安裝體， 其中，上述樹脂粘合劑中之羧酸酐，至少含有環狀脂肪族 本纸法尺度逋用t國困家椹率（CNS)A4洗格（2丨0ί297公釐）·. 30509s D8 經濟部中央橾準局貝工消費合作社印製 六 *申請專利範圍 1 I 酸 酐 者 〇 1 1 7 • 如 串 請 專 利 範 圍 第 6 項 之 半 導 餿 裝 置 之安 裝 饈 1 I 其 中 9 上 述 瓚 狀 脂 肪 族 酸 酐 爲 至 少 含 三 烷 基 四 氫 鄰 苯 二 甲 1 請 1 I 酸 酐 者 0 先 閲 1 8 • 如 甲 請 專 利 範 圍 第 1 tS 之 半 導 髓 裝 置 之 安 裝 體 9 背 * 1 1 其 中 9 上 述 半 導 體 裝 置 之 沖 擊 霪 極 爲 二 段 凸 起 狀 之 柱 式 沖 之 注 1 1 I 擊 電 極 0 事 項 再 1 1 1 9 一 種 半 導 體 裝 置 之 安 裝 方 法 > 其 爲 在 具 獨L 極 襯 墊 填 寫 本 1 裝 之 半 導 髄 裝 置 裝 載 具 有 端 電 極 之 基 板 的 半 導 髖 裝 置 之 安 裝 頁 1 1 方 法 y •其 特 徽 僅 具 備 ： 在 上 述 半 導 體 裝 匿 之 電 極 襯 墊 形 成 1 1 沖 擊 電 極 之 第 1 製 程 ； 在 上 述 沖 擊 電 極 之 前端 附 近 附 著 導 1 I 電 性 粘 接 劑 之 第 2 製 程 ： 使 上 述 沖 擊 電 極 及 基 板 之 端 « 極 ίτ I 對 正 位 置 > 設 置 半 導 體 裝 α 於 基 板 上 9 透 過 上 述 導 電 性 粘 1 | 接 層 使 半 導 髏 裝 置 之 沖 擊 電 極 及 基 板 之 端 電 極 電 性 連 接 之 1 1 I 第 3 製 程 調 整 由 粘 度 爲 1 0 0 粕 • 秒 以 下 且 觸 變 性 指 數 1 1 線 1 爲 1 • 1 以 下 之 組 成 物 所 成 封 合 材 料 之 第 4 製 程 ： 充 填 上 述 封 合 材 料 於 上 述 半 導 體 裝 置 及 基 板 之 間 隙 的 第 5 製 程 ： 1 1 將 上 述 封 合 材 料 硬 化 ， 使 上 述 半 導 體 裝 置 及 基 板 機 械 式 接 1 | 合 之 第 6 製 程 9 如 此 所 構 成 者 0 1 I 1 0 • 如 申 請 專 利 範 圍 第 9 項 之 半 導 體 裝 置 之 安 裝 方 1 1 | 法 * 其 中 上 述 第 4 製 程 中 之 上 述 組 成 物 係 使 用 以 至 少 含 有 \ 聚 環 氧 化 物 9 羧 酸 酐 9 流 變 學 改 良 劑 及 潛 在 性 硬 化 觸 媒 之 1 ί 樹 脂 粘 合 劑 與 絕 緣 性 物 質 所 成 塡 料 爲 主 成 份 之 組 成 物 9 1 1 上 述 流 變 學 改 良 劑 具 有 阻 礙 上 述 羧 酸 酐 中 之 游 離 酸 及 上 述 1 1 本紙張尺度適用中國_家梯準（〇奶>八4規>格（210芩297公釐） J • 36 - 經濟部中央標準局員工消费合作社印袋 A8 B8 C8 D8 六、申請專利範圍 塡料表面上之極性基的相互作用者。 1 1 .如申請專利範圍第9項之半導體裝e之安裝方 法，其中，上述流變學改良劑，係含有不發揮硬化機能程 度的微置作爲二液性封合材料之硬化觸媒使用者。 1 2 .如申請專利範園第1 0項之半導髏裝置之安裝 方法，其中在上述第4製程中，上述樹脂粘合劑中之羧酸 酐，至少含有環狀脂肪族酸酐者。 1 3 .如申猜專利範園第1 2項之半導饞裝置之安裝 方法，其中在上述第4製程中，上述環狀脂肪族酸酐，至 少含有三焼基四氫鄰苯二甲酸酐。 1 4 .如申請專利範園第9項之半導體裝置之安裝方 法，其中在上述第1製程中，上述半導體裝置之沖擊《極 ，係形成二段凸起狀之柱式沖擊《極者。 1 5 .如申請專利範圍第9項之半導《裝置之安裝方 法，其中上述第5製程係使封合材料在室溫條件下流入者 0 1 6 .如申請專利範圍第9項之半導體裝置之安裝方 法，其中上述第5製程係使封合材料在減壓條件下流入者 0 17.如申請專利範園第9項之半導體裝置之安裝方 法，其中上述第4製程係首先混合羧酸酐及塡料之一部份 ，使該混合物蝕刻後，添加聚環氧化物及瑱料之殘餘部份 者0 1 8 .如申猜專利範園第1 0項之半導體裝置之安裝 本紙浪尺度適用令*國家揉準（仁呢）八4規格（210>^297公釐） Λ ----------^------•订-----1^ (請先鬩讀背面之注意事項再填寫本頁) -37 - 經濟部中央標準局負工消費合作社印» 3〇5ΰ98 ll D8 六、申請專利範圍 方法，其中上述流變學改良劑，含有選擇性吸附羧酸酐中 游離酸之物質。 1 9 .如申請專利範園第1 0項之半導體裝置之安裝 方法，其中，上述流變學改良劑爲路易士鹹基化合物者。 2 0 .如申請專利範圍第1 0項之半導髏裝置之安裝 方法，其中上述流變學改良劑係環內含有三級胺化合物， 三級膦化合物，四級銨鹽，四級鳞鹽及氮原子之雜環化合 物中之至少一種者。 2 1 . —種半導《裝置之安裝用封合材料，其爲埋沒 半導镫裝《及基板之間隙，使兩者連接用之封合材料，其 特徵爲，具備：至少含有聚環氣化物，羧酸肝，流變學改 良劑及潛在性硬化觸媒之重置比8 0〜2 5%之樹脂粘合 劑：及絕綠性物質所成重量比2 0〜7 5%之塡料， 上述流變學改良劑具有阻礙上述羧酸酐中游離酸及上 述®料表面上之極性基的相互作用的機能。 2 2 .如申請專利範圍第2 1項之半導髏裝置之安裝 用封合材料，其中，上述流變學改良劑含有選擇性吸附羧 酸酐中之游離酸的物質。 2 3 .如申請專利範園第2 1項之半導體裝置之安裝 用封合材料，其中，上述流變學改良劑爲路易士鹹基化合 物。 2 4 .如申請專利範園第2 1項之半導髗裝β之安裝 用封合材料，其中，上述流變學改良劑係環內含有三級胺 化合物，三級膦化合物，四級銨鹽，四級鱗鹽及氮原子之 本紙張尺度埴用中國家輾率（CNS ) Α4規格（210子297公釐） -38 - I I ! J 裝 II 訂 線 (請先W讀背面之注意事項再填寫本頁) 305098 abI C8 D8 六、申請專利範圍 雜環化合物中之至少一缠者。 2 5 .如申請專利範園第2 1項之半導《裝置之安裝 用封合材料，其中，上述樹脂粘合劑中羧酸酐，至少含有 環狀脂肪族酸酐。 2 6 .如申請專利範園第2 5項之半導《裝置之安裝 用封合材料，其中，上述環狀脂肪族酸酐，至少含有三烷 基四氫鄰苯二甲酸酐者。 2 7 .如申腈專利範園第2 1項之半導體裝置之安裝 用封合材料，其中，上述樹脂粘合劑及上述塡料爲-液化 〇 2 8 .如申讅專利範圍第2 1項之半導嫌裝置之安裝 用封合材料，其中上述樹脂粘合劑具有下列組成： 上述羧酸酐及上述聚環氣化物之當量比爲0.8〜 1 · 1 ，相對於上述硬化觸媒之樹脂粘合劑全體的重纛比 爲〇 · 3〜3 %， 相對於上述流變學改良劑之樹脂粘合劑全髏的重量比 爲 0 . 02 〜0 · 3%。 經濟部中央標奉局貝工消費合作社印裝 (請先閲讀背面之注意事項再填寫本頁) 2 9 . —種半導體裝置之安裝用封合材料，其爲埋沒 半導體裝置及基板之間隙，使兩者連接用之封合材料，其 特徵爲具備：至少含有聚環氧化物，羧酸酐，流變學改良 劑及潛在性硬化觸媒之重量比8 0〜2 5%之樹脂粘合劑 :及絕緣性物質所成重置比2 0〜7 5%之填料， 首先，混合羧酸酐及塡料之一部份，使該混合物蝕刻 後，藉添加聚環氧化物及塡料之殘餘部份而調整之。 本紙張尺度逍用中國钃家輮準（CNS ) A4規格（210 ¥297公釐） 4 -39 -6. Patent application scope 1. A semiconductor device mounting body, which is specifically equipped with: a semiconductor device with an electrode pad; a substrate with a cyanide terminal; an impact m-pole provided on the electrode pad of the semiconductor device; by A conductive adhesive with flexibility to form the conductive adhesive layer that electrically connects the impact electrode and the upper electrode on the substrate; and a viscosity of less than 100,000 meals · sec and a thixotropy index of 1.1 or less The composition is formed by hardening, and a sealing layer buried in the gap between the semi-conducting hip device and the substrate to mechanically join the two. 2. For example, the installation skeleton of the semiconductor device according to item 1 of the patent application park, wherein the above composition is a resin binder containing at least polyepoxide, carboxylic anhydride, rheology modifier and latent curing catalyst: The filler composed of an insulating substance is the main component, and the rheology modifier has an effect of hindering the interaction between the free acid in the carboxylic acid anhydride and the polar group on the surface of the base material. 3. The mounting body of the semi-conducting skeleton device as claimed in item 2 of the Patent Fan Garden, wherein the rheology modifier contains a substance that selectively adsorbs free acid in the carboxylic acid anhydride. Printed and printed by the Central Standard Rate Consumer Cooperative of the Ministry of Economic Affairs (please read the precautions on the back before filling in this page) 4. If you are applying for the installation of the semiconductor device in item 2 of the patent park, the above rheology modifier is Lewis salt-based compound ° 5. For example, the installation body of the semiconductor device according to item 2 of the patent application, wherein the fluid flow modifier is a ring containing a tertiary amine compound, tertiary phosphine compound, quaternary ammonium salt, At least one of a quaternary onium salt and a heterocyclic compound of nitrogen atom. 6. The installation body of the semi-conducting skull device as claimed in item 2 of the Patent Fan Garden, wherein the carboxylic acid anhydride in the resin binder mentioned above contains at least the cyclic aliphatic paper method standard to use the national poverty rate ( CNS) A4 Washing grid (2mm0297mm) ·. 30509s D8 Printed by the Ministry of Economic Affairs, Central Bureau of Industry and Commerce, Beigong Consumer Cooperatives 6 * Applicable patent scope 1 I Anhydride 〇1 1 7 • If the patent scope item 6 is requested The installation of the semi-conducting device 1 I where 9 the above-mentioned anamorphic aliphatic acid anhydride contains at least trialkyltetrahydrophthalic acid 1 please 1 I acid anhydride 0 first read 1 8 The mounting body of the semi-medullary guide device 9 back * 1 1 of which 9 the impact target of the above semiconductor device is a two-stage convex column-shaped punch note 1 1 I strike electrode 0 matter again 1 1 1 9 Method > It is in the unique L pole Pad fill-in book 1 Installation of a semi-conducting device for mounting a semi-conducting hip device equipped with a substrate with end electrodes 1 1 Method y • Its special emblem is only provided with: 1 1 impact electrode formed on the electrode pad hidden in the above semiconductor The first process; the second process of attaching a conductive 1 I electrical adhesive near the front end of the impact electrode: aligning the impact electrode and the end of the substrate «pole ίτ I > setting the semiconductor device α on the substrate 9 Through the above-mentioned conductive adhesive 1 | junction layer, the impact electrode of the semiconductor device and the terminal electrode of the substrate are electrically connected. 1 1 I The third process adjustment is from viscosity of 1 0 0 meal • seconds and thixotropy index 1 1 line 1 is the fourth process of the sealing material formed by the following components: 1. The fifth process of filling the gap between the sealing material in the semiconductor device and the substrate: 1 1 hardening the sealing material Mechanical connection of the above-mentioned semiconductor device and substrate 1 | 6th process of the combination 9 so constructed 0 1 I 1 0 • Installer of the semiconductor device as claimed in item 9 of the scope of patent application 1 1 | Method * Among the above-mentioned 4th process The above-mentioned composition in is a composition mainly composed of a material composed of a resin binder and an insulating substance containing at least \ polyepoxide 9 carboxylic anhydride 9 rheology modifier and latent hardening catalyst物 9 1 1 The above rheology modifier has hindered the free acid in the above carboxylic anhydride and the above 1 1 The paper size is applicable to China_Jia Tizhun (〇 奶> Eight 4 gauges) grid (210 Qin 297 mm) J • 36-Printed Bag A8 B8 C8 D8 of the Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs. 6. The scope of patent application. Interaction of polar groups on the surface of the material. 1 1. The method for mounting a semiconductor device as claimed in item 9 of the patent scope, wherein the rheology modifier mentioned above is a hardening catalyst user containing a micro-device that does not exert a degree of hardening function as a two-component sealing material . 1 2. The method for installing a semi-conducting skeleton device according to item 10 of the patent application park, wherein in the above fourth process, the carboxylic acid anhydride in the resin binder contains at least a cyclic aliphatic acid anhydride. 13. The installation method of the semiconducting device as described in item 12 of Shenchai Patent Fan Garden, wherein in the above fourth process, the cyclic aliphatic acid anhydride contains at least trialkyltetrahydrophthalic anhydride. 14. The method of installing a semiconductor device as described in item 9 of the patent application park, wherein in the above-mentioned first process, the impact of the above-mentioned semiconductor device is formed by a two-stage convex column-shaped impact. 1 5. As in the semi-conducting device installation method of item 9 of the patent application scope, in which the above fifth process is to allow the sealing material to flow in at room temperature. 0 1 6. As in the semiconductor device of the application item 9 The installation method, wherein the above-mentioned fifth process is to allow the sealing material to flow in under reduced pressure. 17. For example, the installation method of the semiconductor device according to item 9 of the patent application, wherein the above-mentioned fourth process is to first mix carboxylic anhydride and A part of the material, after etching the mixture, the addition of polyepoxide and the remaining part of the material is 0 1 8. For example, the installation of the semiconductor device of item 10 of the Shenchai Patent Fan Garden. * The National Standard (Ren's) 8 4 specifications (210 > ^ 297mm) Λ ---------- ^ ------ • Subscribe ----- 1 ^ (please leave first (Read the precautions on the back and fill in this page) -37-Printed by the Ministry of Economic Affairs, Central Standards Bureau, Consumer Labor Cooperatives »3〇5ΰ98 ll D8 6. Patent application method, in which the above rheology modifier contains selective adsorption of carboxylic anhydride Free acid substances. 1 9. The method for mounting a semiconductor device according to item 10 of the patent application park, wherein the rheology modifier is a Lewis salt-based compound. 2 0. The installation method of the semi-conducting skull device as claimed in item 10 of the patent scope, wherein the rheology modifier contains a tertiary amine compound, tertiary phosphine compound, tertiary ammonium salt, and tertiary scale salt in the ring And at least one of heterocyclic compounds of nitrogen atom. 2 1. A kind of semi-conducting "sealing material for the installation of the device, which is a sealing material for burying the gap between the semiconducting stirrup" and the substrate to connect the two, which is characterized by having: at least containing polycyclic gas Resin binder, carboxylic acid liver, rheology modifier and latent sclerosis catalyst with a reset ratio of 8 0 ~ 2 5% of the resin binder: and the ratio of the green substance to the weight ratio of 2 0 ~ 7 5%. It is expected that the rheology modifier has the function of hindering the interaction between the free acid in the carboxylic anhydride and the polar group on the surface of the ® material. 2 2. The sealing material for installation of a semi-conducting skull device as claimed in item 21 of the patent scope, wherein the rheology modifier contains a substance that selectively adsorbs the free acid in the carboxylic acid anhydride. 2 3. The sealing material for the installation of a semiconductor device as described in item 21 of the patent application park, wherein the rheology modifier is a Lewis salt-based compound. 2 4. For the sealing material for the installation of semi-conductor β in patent application No. 21, wherein the rheology modifier contains a tertiary amine compound, tertiary phosphine compound and quaternary ammonium in the ring The original paper scale of salt, four-grade scale salt and nitrogen atoms is used in the Chinese National Rolling Rate (CNS) Α4 specification (210 297 mm) -38-II! J Pack II binding line (please read the precautions on the back first (Fill in this page again) 305098 abI C8 D8 6. At least one of the patented heterocyclic compounds. 2 5. The semi-conducting "installation sealing material for device installation" as described in item 21 of the patent application park, wherein the carboxylic acid anhydride in the above resin binder contains at least a cyclic aliphatic acid anhydride. 26. For the semi-conducting "installation sealing material for device installation" in the application of patent Fanyuan No. 25, wherein the above-mentioned cyclic aliphatic acid anhydride contains at least trialkyltetrahydrophthalic anhydride. 2 7. For example, the sealing material for the installation of semiconductor devices according to item 21 of the Nitrile Patent Park, where the above resin binder and the above-mentioned materials are liquefied. 2 8. If applying for patent scope item 21 The sealing material for the installation of the semiconductive device, wherein the resin binder has the following composition: The equivalent ratio of the carboxylic acid anhydride and the polycyclic gasification compound is 0.8 ~ 1.1, which is relative to the resin of the hardening catalyst The weight ratio of the whole mixture is from 0.3 to 3%, and the weight ratio of the entire resin binder to the rheology modifier is from 0.02 to 0.3%. Printed by Beigong Consumer Cooperative of Central Standardization Bureau of the Ministry of Economic Affairs (please read the precautions on the back before filling out this page) 2 9. — A kind of sealing material for the installation of semiconductor devices, which bury the gap between the semiconductor device and the substrate, so that The sealing material for the connection of the two is characterized by the following: a resin binder containing at least a weight ratio of 8 0 ~ 2 5% of polyepoxide, carboxylic anhydride, rheology modifier and latent curing catalyst: And insulating materials, the replacement ratio of the filler is 2 0 ~ 7 5%, first, mix a part of carboxylic anhydride and base material, after etching the mixture, by adding the remaining part of polyepoxide and base material And adjust it. The size of this paper is easy to use China National Standard (CNS) A4 (210 ¥ 297mm) 4 -39-
TW085107178A 1995-11-28 1996-06-14 The installed method and material for semiconductor device TW305098B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP07308798A JP3093621B2 (en) 1995-01-30 1995-11-28 Semiconductor device mounting method
US08/593,675 US5641996A (en) 1995-01-30 1996-01-29 Semiconductor unit package, semiconductor unit packaging method, and encapsulant for use in semiconductor unit packaging

Publications (1)

Publication Number Publication Date
TW305098B true TW305098B (en) 1997-05-11

Family

ID=51565976

Family Applications (1)

Application Number Title Priority Date Filing Date
TW085107178A TW305098B (en) 1995-11-28 1996-06-14 The installed method and material for semiconductor device

Country Status (1)

Country Link
TW (1) TW305098B (en)

Similar Documents

Publication Publication Date Title
EP0878839B1 (en) Semiconductor unit package and semiconductor unit packaging method, and encapsulant for use in semiconductor unit packaging
TW200910488A (en) Anisotropic electroconductive film, and process for producing connection structure using the same
US20090035553A1 (en) Anisotropic conductive material
TW200815562A (en) Adhesive tape, connected structure and semiconductor package
JP2002212537A (en) Adhesive and electric device
CN102057475B (en) Manufacturing method for semiconductor device and semiconductor device
TW201229123A (en) Filler composition for space between layers of three-dimensional integrated circuit, coating fluid, and process for producing three-dimensional integrated circuit
KR101391696B1 (en) Anisotropic conductive composition and film
CN103160221A (en) Anisotropic conductive film and semiconductor device bonded by the same
KR100966260B1 (en) Electrically Conductive Adhesive Compositions for Die Adhesion Having Enhanced Moisture Resistance and Reliability
CN102753620A (en) Curable resin compositions useful as underfill sealants for low-k dielectric-containing semiconductor devices
JP2009147231A (en) Packaging method, semiconductor chip, and semiconductor wafer
JP2008050544A (en) Epoxy resin composition, semiconductor device and manufacturing process of semiconductor device
TW201127864A (en) Semiconductor-sealing epoxy resin composition and semiconductor device
AU695142B2 (en) Semiconductor unit package, semiconductor unit packaging method and encapsulant for use in semiconductor unit packaging
TW305098B (en) The installed method and material for semiconductor device
JP3093621B2 (en) Semiconductor device mounting method
US20030190479A1 (en) Thermosetting resin compositions comprising epoxy resins, adhesion promoters and curatives based on the combination of nitrogen compounds and transition metal complexes
JP4079125B2 (en) Epoxy resin composition, semiconductor device and manufacturing method thereof
JPH1117075A (en) Semiconductor device
JP2007063333A (en) Film adhesive for fixing semiconductor element, semiconductor device using the same and method for manufacturing the semiconductor device
CN102703012A (en) Heat conduction COB (Chip On Board) epoxy adhesive and preparation method thereof
JP2008189760A (en) Underfill agent, semiconductor device obtained by using the same and method for producing the semiconductor device
JP2004059778A (en) Liquid epoxy resin composition for encapsulation filler
JP2012162721A (en) Adhesive and electric device