JP2007063333A - Film adhesive for fixing semiconductor element, semiconductor device using the same and method for manufacturing the semiconductor device - Google Patents

Film adhesive for fixing semiconductor element, semiconductor device using the same and method for manufacturing the semiconductor device Download PDF

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JP2007063333A
JP2007063333A JP2005248154A JP2005248154A JP2007063333A JP 2007063333 A JP2007063333 A JP 2007063333A JP 2005248154 A JP2005248154 A JP 2005248154A JP 2005248154 A JP2005248154 A JP 2005248154A JP 2007063333 A JP2007063333 A JP 2007063333A
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semiconductor element
adhesive
film
fixing
substrate
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Takeshi Aoyama
健 青山
Masaru Anzai
勝 安西
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Nippon Steel Chemical and Materials Co Ltd
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Nippon Steel Chemical Co Ltd
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Priority to KR1020060081632A priority patent/KR101253107B1/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/06—Containers; Seals characterised by the material of the container or its electrical properties
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
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    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/831—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus
    • H01L2224/83101—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus as prepeg comprising a layer connector, e.g. provided in an insulating plate member
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/83385—Shape, e.g. interlocking features
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222—Sequential connecting processes
    • H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector

Abstract

<P>PROBLEM TO BE SOLVED: To provide a film adhesive for fixing a semiconductor element which, even though it is intended for fixing the semiconductor element, is capable of sufficiently preventing void formation by achieving a thickness thicker than that of an electronic component mounted on a substrate, is capable of sufficiently filling a gap between the substrate and the semiconductor element by virtue of the thickness of the electronic component mounted on the substrate and is capable of efficiently and securely attaching the semiconductor element onto the substrate having a rough surface. <P>SOLUTION: The film adhesive for fixing the semiconductor element has a thickness of 200-2,000 μm and is obtained by stacking a plurality of adhesive films made of a material having melt viscosity at 140°C of ≤50 Pa s. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

本発明は、半導体素子固定用フィルム状接着剤、それを用いた半導体装置、並びに、その半導体装置の製造方法に関する。   The present invention relates to a film-like adhesive for fixing a semiconductor element, a semiconductor device using the same, and a method for manufacturing the semiconductor device.

近年では、電子機器の高機能化や軽薄短小化が進み、電子機器に用いられる様々な部品の高密度集積化や高密度実装化が要求されている。そして、このような電子機器に用いられる半導体装置においては、その小型化や多ピン化が進められている。また、このような半導体装置に用いられる半導体素子を実装する基板についても、その小型化や細配線化が進められており、例えば、電子機器への半導体装置の収納性を高めるため、リジット基板とフレキシブル基板とを積層して一体化した折り曲げ可能なリジットフレックス基板が使われるようになってきた。   In recent years, electronic devices have become more sophisticated, lighter, thinner, and smaller, and there is a demand for high-density integration and high-density mounting of various components used in electronic devices. And in the semiconductor device used for such an electronic device, the miniaturization and the number of pins are being promoted. In addition, with respect to a substrate on which a semiconductor element used in such a semiconductor device is mounted, miniaturization and fine wiring have been promoted. For example, in order to improve the storage property of the semiconductor device in an electronic device, A foldable rigid flex substrate that is laminated and integrated with a flexible substrate has come to be used.

このような状況下において、従来のようなリードフレームを使用する半導体装置では小型化に限界があるため、基板上に半導体素子を実装するＢＧＡ（Ｂａｌｌ Ｇｒｉｄ Ａｒｒａｙ）やＣＳＰ（Ｃｈｉｐ Ｓｃａｌｅ Ｐａｃｋａｇｅ）といったエリア実装型の搭載方式を採用した半導体装置が提案されてきた。そして、このような半導体装置に用いられている半導体素子の電極と、基板の電極とを電気的に接続する方法としては、ワイヤーボンディング方式やＦＣ（Ｆｒｉｐ Ｃｈｉｐ）接続方式が知られており、近年では、より小型化に有利なＦＣ接続方式と、ＢＧＡやＣＳＰ搭載方式とを採用して得られる半導体装置が開示されている。   Under such circumstances, since there is a limit to miniaturization in a conventional semiconductor device using a lead frame, an area such as a BGA (Ball Grid Array) or CSP (Chip Scale Package) on which a semiconductor element is mounted on a substrate. Semiconductor devices employing a mounting type mounting method have been proposed. And as a method of electrically connecting the electrode of the semiconductor element used in such a semiconductor device and the electrode of the substrate, a wire bonding method and an FC (Flip Chip) connection method are known, and in recent years. Discloses a semiconductor device obtained by adopting an FC connection method advantageous for further miniaturization and a BGA or CSP mounting method.

しかしながら、このような搭載方式を採用した従来の半導体装置においては、一つの半導体装置に対して半導体素子を一つしか収納できないことから半導体装置の小型化に限界があった。また、このような従来の搭載方式を採用した半導体装置においては、半導体素子が動作するために必要な受動素子等の電子部品が半導体装置の外部に配置されていたことから、これを用いる電子機器の小型化にも限界があり、更には配線長が長くなってしまうため高速信号を扱う場合に設計上の制約が大きくなっていた。   However, in the conventional semiconductor device adopting such a mounting method, there is a limit to miniaturization of the semiconductor device because only one semiconductor element can be accommodated in one semiconductor device. In addition, in a semiconductor device employing such a conventional mounting method, electronic components such as passive elements necessary for the operation of the semiconductor element are arranged outside the semiconductor device. There is a limit to downsizing, and further, since the wiring length becomes long, the design restrictions have become large when handling high-speed signals.

そこで、受動素子等の電子部品を半導体装置の内部に備えることを可能とした半導体装置が研究、開示されてきた。このような半導体装置としては、例えば、特開平８−１６２６０８号公報（特許文献１）に記載の基板上に半導体素子とコンデンサ（電子部品）とを一体成型した半導体装置や、特開２００５−１２１９９号公報（特許文献２）に記載の基板と、前記基板上に実装された受動素子と、前記受動素子の表面に積層された半導体素子とを備える半導体装置等が挙げられる。このような半導体装置においては、基板上に半導体素子を接着するために半導体素子固定用接着剤が用いられている。そして、このような半導体素子固定用接着剤の分野においても、得られる半導体装置の小型化を図るために、種々の半導体素子固定用接着剤が研究、開示されてきている。   Therefore, research and disclosure have been made on a semiconductor device that enables electronic components such as passive elements to be provided inside the semiconductor device. Examples of such a semiconductor device include a semiconductor device in which a semiconductor element and a capacitor (electronic component) are integrally formed on a substrate described in JP-A-8-162608 (Patent Document 1), and JP-A-2005-12199. And a semiconductor device including a substrate described in Japanese Patent Publication (Patent Document 2), a passive element mounted on the substrate, and a semiconductor element stacked on the surface of the passive element. In such a semiconductor device, a semiconductor element fixing adhesive is used to bond the semiconductor element on the substrate. In the field of semiconductor element fixing adhesives as well, various semiconductor element fixing adhesives have been researched and disclosed in order to reduce the size of the obtained semiconductor device.

例えば、特開２００５−６０４１７号公報（特許文献３）においては、（Ａ）テトラカルボン酸二無水物からなる酸二無水物成分、及び、特定のシリコーンジアミンと、特定の芳香族ジアミンを主たる成分として含有するジアミン成分より重合されたポリイミド樹脂１００重量部、（Ｂ）エポキシ樹脂５〜２００重量部、（Ｃ）エポキシ樹脂硬化剤０．１〜１００重量部、（Ｄ）無機フィラー０〜３００重量部、（Ｅ）有機溶剤１００〜５００重量部よりなるスクリーン印刷用接着剤ワニスが開示されている。しかしながら、特許文献３に記載の従来の液体型の半導体素子固定用接着剤を用いた場合、その接着剤中に有機溶剤を含むため乾燥し難く、膜厚を厚くした場合には形成された接着剤層の膜にボイドが生じてしまっていた。そのため、このような液体型の半導体素子固定用接着剤においては、乾燥後の接着剤層の厚みを２００μｍ以上とすることはできず、基板上に設置された電子部品の厚さによって基板と半導体素子との間に生じてしまう空間を、その半導体素子固定用接着剤で埋め込むことができなかった。また、このような従来の液体型の半導体素子固定用接着剤においては、その接着剤をスクリーン印刷で付着させていたことから生産コスト面でも問題があった。   For example, in JP-A-2005-60417 (Patent Document 3), (A) an acid dianhydride component composed of tetracarboxylic dianhydride, a specific silicone diamine, and a specific component containing a specific aromatic diamine 100 parts by weight of a polyimide resin polymerized from the diamine component contained therein, (B) 5 to 200 parts by weight of an epoxy resin, (C) 0.1 to 100 parts by weight of an epoxy resin curing agent, (D) 0 to 300 parts by weight of an inorganic filler Part (E), an adhesive varnish for screen printing comprising 100 to 500 parts by weight of an organic solvent is disclosed. However, when the conventional liquid-type semiconductor element fixing adhesive described in Patent Document 3 is used, it is difficult to dry because the adhesive contains an organic solvent, and the adhesive formed when the film thickness is increased. Voids were generated in the film of the agent layer. Therefore, in such a liquid-type semiconductor element fixing adhesive, the thickness of the adhesive layer after drying cannot be 200 μm or more, and the thickness of the electronic component placed on the substrate depends on the thickness of the substrate and the semiconductor. The space created between the elements could not be filled with the semiconductor element fixing adhesive. Further, such a conventional liquid type semiconductor element fixing adhesive has a problem in production cost because the adhesive is adhered by screen printing.

また、特開平１０−２５９３６４号公報（特許文献４）においては、接着剤フィルム（ａ）と、第２の接着剤層を形成した接着剤フィルム（ｂ）と、有機溶剤可溶性接着剤からなる塗布液を塗布、乾燥して形成した接着剤フィルム（ｃ）とからなる電子部品用接着テープが開示されている。しかしながら、特許文献４に記載の従来の半導体素子固定用接着剤においては、接着剤層の数だけ塗工工程が必要で塗工設備、生産コスト面で大きな問題があった。更に、有機溶剤可溶性接着剤層を乾燥させる際に有機溶剤を蒸発させることが困難であるとともに、乾燥させて得られる有機溶剤可溶性接着剤層中にボイドが生じてしまうという問題があった。そのため、特許文献４に記載されているような半導体素子固定用接着剤においては、その厚みを２００μｍ以上とすることはできず、基板上に設置された電子部品の厚さによって基板と半導体素子との間に生じてしまう空間を、その半導体素子固定用接着剤で埋め込むことができなかった。   In JP-A-10-259364 (Patent Document 4), an application comprising an adhesive film (a), an adhesive film (b) on which a second adhesive layer is formed, and an organic solvent-soluble adhesive. An adhesive tape for electronic parts comprising an adhesive film (c) formed by applying and drying a liquid is disclosed. However, the conventional adhesive for fixing a semiconductor element described in Patent Document 4 requires a coating process as many as the number of adhesive layers, and has a large problem in terms of coating equipment and production cost. Furthermore, when the organic solvent-soluble adhesive layer is dried, it is difficult to evaporate the organic solvent, and there is a problem that voids are generated in the organic solvent-soluble adhesive layer obtained by drying. Therefore, in the adhesive for fixing a semiconductor element as described in Patent Document 4, the thickness of the adhesive cannot be 200 μm or more, and the thickness of the electronic component placed on the substrate is different from that of the substrate and the semiconductor element. The space generated between the two could not be filled with the semiconductor element fixing adhesive.

更に、特開２００１−４９２２０号公報（特許文献５）においては、（Ａ）シリカ、（Ｂ）フェノキシ樹脂、（Ｃ）グリシジルエーテル型エポキシ樹脂及び（Ｄ）エポキシ樹脂硬化剤を必須成分とし、組成物中のシリカ含有量が５０〜８０質量％であり、且つ（Ｂ）フェノキシ樹脂／（Ｃ）グリシジルエーテル型エポキシ樹脂の重量比が０．０２〜１の範囲であるフィルム状接着剤用組成物が開示されている。しかしながら、特許文献５に記載のフィルム状の半導体素子固定用接着剤においては、基板上に設置された電子部品の厚さが厚い場合には、基板と半導体素子との間に生じてしまう空間をその半導体素子固定用接着剤で十分に埋め込むことができなかった。
特開平８−１６２６０８号公報 特開２００５−１２１９９号公報 特開２００５−６０４１７号公報 特開平１０−２５９３６４号公報 特開２００１−４９２２０号公報 Furthermore, in JP 2001-49220 A (Patent Document 5), (A) silica, (B) phenoxy resin, (C) glycidyl ether type epoxy resin and (D) epoxy resin curing agent are essential components, The composition for film adhesives having a silica content of 50 to 80% by mass and a weight ratio of (B) phenoxy resin / (C) glycidyl ether type epoxy resin in the range of 0.02 to 1 Is disclosed. However, in the film-like adhesive for fixing a semiconductor element described in Patent Document 5, when the thickness of the electronic component placed on the substrate is thick, there is a space generated between the substrate and the semiconductor element. The semiconductor element fixing adhesive could not be sufficiently embedded.
JP-A-8-162608 JP 2005-12199 A JP-A-2005-60417 Japanese Patent Laid-Open No. 10-259364 JP 2001-49220 A

本発明は、上記従来技術の有する課題に鑑みてなされたものであり、半導体素子固定用フィルム状接着剤であるにも拘らず、その厚さを基板上に設置される電子部品の厚さよりも厚くしながらボイドの発生を十分に防止することができ、しかも基板上に設置された電子部品の厚さによって基板と半導体素子との間に生じてしまう空間をその半導体素子固定用フィルム状接着剤によって十分に埋め込むことができ、凹凸のある基板に半導体素子を効率よく且つ確実に接着することが可能な半導体素子固定用フィルム状接着剤、それを用いた半導体装置、並びに、その半導体装置の製造方法を提供することを目的とする。   The present invention has been made in view of the above-described problems of the prior art, and although it is a film-like adhesive for fixing a semiconductor element, the thickness thereof is larger than the thickness of an electronic component installed on a substrate. A film-like adhesive for fixing a semiconductor element that can sufficiently prevent the generation of voids while being thick, and that creates a space between the substrate and the semiconductor element due to the thickness of the electronic component placed on the board. Film-like adhesive for fixing a semiconductor element, which can be sufficiently embedded by a semiconductor substrate, and can efficiently and reliably bond a semiconductor element to an uneven substrate, a semiconductor device using the same, and manufacture of the semiconductor device It aims to provide a method.

本発明者らは、上記目的を達成すべく鋭意研究を重ねた結果、１４０℃における溶融粘度が５０Ｐａ・ｓ以下である材料からなる接着剤用フィルムを複数枚積層することにより、基板上の電子部品の厚さよりも厚い厚さを有する半導体素子固定用フィルム状接着剤を得ることができ、これによってボイドの発生を十分に防止しつつ、基板上に設置された電子部品の厚さによって基板と半導体素子との間に生じてしまう空間を、半導体素子固定用フィルム状接着剤によって十分に埋め込んで基板に半導体素子を効率よく且つ確実に接着することが可能となるということを見出し、本発明を完成するに至った。   As a result of intensive studies to achieve the above object, the present inventors have laminated a plurality of adhesive films made of a material having a melt viscosity at 140 ° C. of 50 Pa · s or less, thereby forming an electron on the substrate. A film-like adhesive for fixing a semiconductor element having a thickness thicker than the thickness of the component can be obtained, thereby preventing the generation of voids and the thickness of the electronic component installed on the substrate. The present invention has found that the space generated between the semiconductor element and the semiconductor element fixing film-like adhesive is sufficiently filled with the semiconductor element, and the semiconductor element can be bonded to the substrate efficiently and reliably. It came to be completed.

すなわち、本発明の半導体素子固定用フィルム状接着剤は、１４０℃における溶融粘度が５０Ｐａ・ｓ以下である材料からなる接着剤用フィルムを複数枚積層してなるものであり、且つ、厚さが２００μｍ〜２０００μｍであることを特徴とするものである。   That is, the film-like adhesive for fixing a semiconductor element of the present invention is formed by laminating a plurality of adhesive films made of a material having a melt viscosity at 140 ° C. of 50 Pa · s or less, and has a thickness of It is characterized by being 200 μm to 2000 μm.

ここで、本発明における材料の溶融粘度の測定方法を説明する。すなわち、本発明における材料の溶融粘度の測定方法は、測定装置としてフローテスター（島津製作所製の商品名「ＣＦＴ−５００Ａ」）を用い、試験片の樹脂を予め所定の温度に加熱し、その溶融物が細管を通過する時の粘性抵抗より測定する方法である。   Here, a method for measuring the melt viscosity of the material in the present invention will be described. That is, the method for measuring the melt viscosity of the material in the present invention uses a flow tester (trade name “CFT-500A” manufactured by Shimadzu Corporation) as a measuring device, and heats the resin of the test piece to a predetermined temperature in advance. This is a method of measuring from the viscous resistance when an object passes through a narrow tube.

また、上記本発明の半導体素子固定用フィルム状接着剤としては、前記材料が、（Ａ）シリカと、（Ｂ）フェノキシ樹脂と、（Ｃ）グリシジルエーテル型エポキシ樹脂と、（Ｄ）エポキシ樹脂硬化剤とを含有し、（Ａ）シリカの含有量が５０〜８０質量％であり、且つ、（Ｂ）フェノキシ樹脂と（Ｃ）グリシジルエーテル型エポキシ樹脂との重量比（（Ｂ）フェノキシ樹脂／（Ｃ）グリシジルエーテル型エポキシ樹脂）が０．０２〜１の範囲である接着剤用組成物であることが好ましい。   Moreover, as the film-like adhesive for fixing a semiconductor element of the present invention, the materials are (A) silica, (B) phenoxy resin, (C) glycidyl ether type epoxy resin, and (D) epoxy resin cured. And (A) the content of silica is 50 to 80% by mass, and the weight ratio of (B) phenoxy resin to (C) glycidyl ether type epoxy resin ((B) phenoxy resin / ( It is preferable that it is the composition for adhesive agents whose C) glycidyl ether type epoxy resin) is the range of 0.02-1.

さらに、上記本発明の半導体素子固定用フィルム状接着剤としては、前記材料の溶融粘度が３００００Ｐａ・ｓ以下となる温度以上であって且つ前記材料の熱硬化開始温度以下である温度範囲内の温度において、前記複数枚の接着剤用フィルムを積層したものであることが好ましい。   Furthermore, as the film-like adhesive for fixing a semiconductor element of the present invention, a temperature within a temperature range that is not less than the temperature at which the melt viscosity of the material is 30000 Pa · s or less and not more than the thermosetting start temperature of the material. In the above, it is preferable that the plurality of adhesive films are laminated.

また、本発明の半導体装置の製造方法は、上記本発明の半導体素子固定用フィルム状接着剤を用いて、半導体素子を基板に接着することを特徴とする方法である。   Moreover, the manufacturing method of the semiconductor device of this invention is a method characterized by adhere | attaching a semiconductor element on a board | substrate using the film adhesive for semiconductor element fixation of the said invention.

さらに、本発明の半導体装置は、半導体素子と、基板と、前記半導体素子と基板とを接着している上記本発明の半導体素子固定用フィルム状接着剤とを備えることを特徴とするものである。   Furthermore, the semiconductor device of the present invention is characterized by comprising a semiconductor element, a substrate, and the film-like adhesive for fixing a semiconductor element of the present invention, which bonds the semiconductor element and the substrate. .

本発明によれば、半導体素子固定用フィルム状接着剤であるにも拘らず、その厚さを基板上に設置される電子部品の厚さよりも厚くしながらボイドの発生を十分に防止することができ、しかも基板上に設置された電子部品の厚さによって基板と半導体素子との間に生じてしまう空間をその半導体素子固定用フィルム状接着剤によって十分に埋め込むことができ、凹凸のある基板に半導体素子を効率よく且つ確実に接着することが可能な半導体素子固定用フィルム状接着剤、それを用いた半導体装置、及び、その半導体装置の製造方法を提供することが可能となる。   According to the present invention, despite the fact that it is a film-like adhesive for fixing a semiconductor element, it is possible to sufficiently prevent the generation of voids while making the thickness thicker than the thickness of the electronic component installed on the substrate. In addition, the space formed between the substrate and the semiconductor element depending on the thickness of the electronic component installed on the substrate can be sufficiently filled with the film-like adhesive for fixing the semiconductor element. It is possible to provide a film-like adhesive for fixing a semiconductor element capable of bonding a semiconductor element efficiently and reliably, a semiconductor device using the same, and a method for manufacturing the semiconductor device.

以下、本発明をその好適な実施形態に即して詳細に説明する。   Hereinafter, the present invention will be described in detail with reference to preferred embodiments thereof.

（半導体素子固定用フィルム状接着剤）
先ず、本発明の半導体素子固定用フィルム状接着剤について説明する。すなわち、本発明の半導体素子固定用フィルム状接着剤は、１４０℃における溶融粘度が５０Ｐａ・ｓ以下である材料からなる接着剤用フィルムを複数枚積層してなるものであり、且つ、厚さが２００μｍ〜２０００μｍであることを特徴とするものである。このような半導体素子固定用フィルム状接着剤は、従来の半導体素子固定用接着剤を使った半導体素子と基板とを接着する方法に適応可能でありながら、半導体素子に実装する温度において低溶融粘性を示し、これによって前記半導体素子固定用フィルム状接着剤が基板上の凹凸に追従して、基板と半導体素子とに生じる空間を、その半導体素子固定用フィルム状接着剤で埋め込みながら半導体素子を基板に効率よく且つ確実に固定することを可能とするものである。 (Film adhesive for fixing semiconductor elements)
First, the film-like adhesive for fixing a semiconductor element of the present invention will be described. That is, the film-like adhesive for fixing a semiconductor element of the present invention is formed by laminating a plurality of adhesive films made of a material having a melt viscosity at 140 ° C. of 50 Pa · s or less, and has a thickness of It is characterized by being 200 μm to 2000 μm. Such a film-like adhesive for fixing a semiconductor element can be applied to a conventional method of bonding a semiconductor element and a substrate using the adhesive for fixing a semiconductor element, but has a low melt viscosity at a temperature at which the semiconductor element is mounted. Thus, the semiconductor element fixing film-like adhesive follows the unevenness on the substrate, and the space formed between the substrate and the semiconductor element is embedded in the semiconductor element fixing film-like adhesive while the semiconductor element is placed on the substrate. It can be fixed efficiently and reliably.

本発明にかかる材料は、上述の本発明における材料の溶融粘度の測定方法を採用して測定される１４０℃における溶融粘度が５０Ｐａ・ｓ以下となる材料である。このような溶融粘度が５０Ｐａ・ｓを超えると、得られる半導体素子固定用フィルム状接着剤を用いて半導体素子と基板とを接着する際に、基板上に設置された電子部品の厚さによって生じる基板上の凹凸に前記半導体素子固定用フィルム状接着剤を追従させることができず、基板と半導体素子との間に空間が生じてしまう。   The material according to the present invention is a material having a melt viscosity at 140 ° C. of 50 Pa · s or less measured by adopting the above-described method for measuring the melt viscosity of the material according to the present invention. When the melt viscosity exceeds 50 Pa · s, the semiconductor element and the substrate are bonded to each other using the obtained film adhesive for fixing a semiconductor element, which is caused by the thickness of the electronic component placed on the substrate. The film-like adhesive for fixing the semiconductor element cannot follow the unevenness on the substrate, and a space is generated between the substrate and the semiconductor element.

このような材料の１４０℃における溶融粘度としては、１Ｐａ・ｓ〜５０Ｐａ・ｓであることがより好ましい。このような溶融粘度が前記下限未満では、得られる半導体素子固定用フィルム状接着剤が柔らかくなりすぎて、基板に半導体素子を接着する際の操作性が低下する傾向にある。   The melt viscosity at 140 ° C. of such a material is more preferably 1 Pa · s to 50 Pa · s. When such melt viscosity is less than the lower limit, the obtained film-like adhesive for fixing a semiconductor element is too soft, and the operability when adhering the semiconductor element to the substrate tends to be lowered.

また、このような材料としては１４０℃における溶融粘度が５０Ｐａ・ｓ以下である材料であれば特に制限されず、公知の接着剤用の組成物等を適宜用いることができる。そして、このような材料の中でも、より十分にボイドの発生を防止することができ、しかも凹凸のある基板に半導体素子をより効率よく接着することが可能となるという観点から、（Ａ）シリカと、（Ｂ）フェノキシ樹脂と、（Ｃ）グリシジルエーテル型エポキシ樹脂と、（Ｄ）エポキシ樹脂硬化剤とを含有し、（Ａ）シリカの含有量が５０〜８０質量％であり、且つ、（Ｂ）フェノキシ樹脂と（Ｃ）グリシジルエーテル型エポキシ樹脂との重量比（（Ｂ）フェノキシ樹脂／（Ｃ）グリシジルエーテル型エポキシ樹脂）が０．０２〜１の範囲である接着剤用組成物を用いることが好ましい。   Such a material is not particularly limited as long as it has a melt viscosity at 140 ° C. of 50 Pa · s or less, and a known adhesive composition or the like can be appropriately used. Among these materials, (A) silica and (A) from the viewpoint that the generation of voids can be more sufficiently prevented and the semiconductor element can be more efficiently bonded to an uneven substrate. , (B) a phenoxy resin, (C) a glycidyl ether type epoxy resin, and (D) an epoxy resin curing agent, (A) the content of silica is 50 to 80% by mass, and (B Use a composition for adhesives in which the weight ratio of () phenoxy resin to (C) glycidyl ether type epoxy resin ((B) phenoxy resin / (C) glycidyl ether type epoxy resin) is in the range of 0.02-1. Is preferred.

本発明の材料として好適に用いることができる前記接着剤用組成物に用いられる（Ａ）シリカとしては特に限定されず、破砕状や球状の溶融シリカ粉末が挙げられる。このような（Ａ）シリカの中でも平均粒径が５〜４０μｍの球状シリカと平均粒径が０．１〜５μｍの微粒子球状シリカの混合物を用いることがより好ましい。このような（Ａ）シリカを用いる場合には、全球状シリカ中に占める微粒子球状シリカの割合が５０質量％以下であることが好ましく、５〜５０質量％の範囲であることがより好ましい。前記微粒子球状シリカの割合が５０質量％を超えると、組成物の溶融粘度が増大して仮圧着特性を低下させる傾向があり、他方、微粒子球状シリカの割合が５質量％未満であると接着剤用フィルムとしたときのフィルムの表面状態の安定性が低下したり、フィルム自体が脆くなったりする傾向がある。このように、前記微粒子球状シリカ比率が５〜５０質量％の範囲にある場合には、幅広い粒度分布となるため安定したフィルム表面性状及びフィルム流動性を示すことが可能となる。   The silica (A) used in the adhesive composition that can be suitably used as the material of the present invention is not particularly limited, and examples thereof include crushed and spherical fused silica powder. Among such silicas (A), it is more preferable to use a mixture of spherical silica having an average particle diameter of 5 to 40 μm and fine particle spherical silica having an average particle diameter of 0.1 to 5 μm. When such (A) silica is used, the proportion of fine-particle spherical silica in the total spherical silica is preferably 50% by mass or less, and more preferably in the range of 5 to 50% by mass. When the proportion of the fine spherical silica exceeds 50% by mass, the melt viscosity of the composition tends to increase and the temporary press-bonding property tends to be lowered. On the other hand, when the proportion of the fine spherical silica is less than 5% by mass, the adhesive When the film is used, the stability of the surface state of the film tends to be reduced, or the film itself tends to become brittle. Thus, when the fine particle spherical silica ratio is in the range of 5 to 50% by mass, a wide particle size distribution is obtained, so that stable film surface properties and film fluidity can be exhibited.

また、前記接着剤用組成物中の（Ａ）シリカの含有量は、５０〜８０質量％の範囲であることが好ましい。本発明にかかる接着剤用フィルムの線膨張率低減の観点からは（Ａ）シリカをより多く含有させることが好ましいが、このような接着剤用組成物中の（Ａ）シリカの含有量が８０質量％を超えると、バインダーとして働く樹脂成分が不足することによって前記接着剤用組成物の粘度が上昇し、接着剤用組成物からなる接着剤用フィルムが脆くなって仮圧着性能が著しく低下する傾向にある。また、前記接着剤用組成物中の（Ａ）シリカの含有量が５０質量％未満では、得られる半導体素子固定用フィルム状接着剤の線膨張率が十分に低減できないため、半導体素子と、電子部品及び基板との間の応力が大きくなる傾向にあり、例えば、半導体装置（パッケージ）を組み立てた後の温度サイクル試験（−６５〜１５０℃）の際に半導体装置が発生する応力に耐えられないケースが生じる。   Moreover, it is preferable that content of the (A) silica in the said adhesive composition is the range of 50-80 mass%. From the viewpoint of reducing the linear expansion coefficient of the adhesive film according to the present invention, it is preferable to contain more (A) silica, but the content of (A) silica in such an adhesive composition is 80. When the content exceeds 50% by mass, the viscosity of the adhesive composition increases due to a lack of the resin component that acts as a binder, the adhesive film made of the adhesive composition becomes brittle, and the temporary press bonding performance is significantly reduced. There is a tendency. In addition, when the content of (A) silica in the adhesive composition is less than 50% by mass, the linear expansion coefficient of the obtained semiconductor element fixing film adhesive cannot be sufficiently reduced. The stress between the component and the substrate tends to increase. For example, the semiconductor device (package) cannot withstand the stress generated by the semiconductor device during the temperature cycle test (−65 to 150 ° C.) after the assembly. A case arises.

さらに、前記接着剤用組成物中の（Ａ）シリカの含有量としては、より確実に前記接着剤用組成物の１４０℃における溶融粘度を５０Ｐａ・ｓ以下とするという観点からは、５０〜７０質量％であることがより好ましい。   Furthermore, as content of (A) silica in the said composition for adhesive agents, from a viewpoint that the melt viscosity in 140 degreeC of the said composition for adhesive agents shall be 50 Pa.s or less more reliably, it is 50-70. More preferably, it is mass%.

また、前記接着剤用組成物に用いられる（Ｂ）フェノキシ樹脂は特に制限されず、公知のフェノキシ樹脂を用いることができる。（Ｂ）フェノキシ樹脂としては、例えば、ビスフェノールＡのようなビスフェノールとエピクロロヒドリンとから得られる分子量が１００００以上となる熱可塑性樹脂を挙げることができる。このようなフェノキシ樹脂としては、より確実に前記接着剤用組成物の１４０℃における溶融粘度を５０Ｐａ・ｓ以下とするという観点からは、分子量が１００００〜３５０００のものであることが好ましい。また、このようなフェノキシ樹脂は、エポキシ樹脂と構造が類似していることから、（Ｃ）グリシジルエーテル型エポキシ樹脂との相溶性がよく、更に、接着性もよいという特徴を有する。（Ｂ）フェノキシ樹脂としては、主骨格がビスフェノールＡ型のものが好適に用いられるが、その他にもビスフェノールＡ／Ｆ混合型フェノキシ樹脂や臭素化フェノキシ樹脂等の市販のフェノキシ樹脂も好適に用いることができる。   In addition, the (B) phenoxy resin used in the adhesive composition is not particularly limited, and a known phenoxy resin can be used. Examples of the (B) phenoxy resin include a thermoplastic resin having a molecular weight of 10,000 or more obtained from bisphenol such as bisphenol A and epichlorohydrin. Such a phenoxy resin preferably has a molecular weight of 10,000 to 35,000 from the viewpoint that the melt viscosity at 140 ° C. of the adhesive composition is 50 Pa · s or less. In addition, since such a phenoxy resin is similar in structure to an epoxy resin, it has a feature that it has good compatibility with (C) glycidyl ether type epoxy resin and also has good adhesion. (B) As the phenoxy resin, those having a main skeleton of bisphenol A type are preferably used, but other commercially available phenoxy resins such as bisphenol A / F mixed type phenoxy resin and brominated phenoxy resin are also preferably used. Can do.

また、前記接着剤用組成物に用いられる（Ｃ）グリシジルエーテル型エポキシ樹脂としては、フェノールノボラックグリシジルエーテル型、オルソクレゾールノボラックグリシジルエーテル型、フルオレンビスフェノールグリシジルエーテル型、トリアジングリシジルエーテル型、ナフトールグリシジルエーテル型、ナフタレンジオールグリシジルエーテル型、トリフェニルグリシジルエーテル型、テトラフェニルグリシジルエーテル型、ビスフェノールＡグリシジルエーテル型、ビスフェノールＦグリシジルエーテル型、ビスフェノールＡＤグリシジルエーテル型、ビスフェノールＳグリシジルエーテル型、トリメチロールメタングリシジルエーテル型等が例として挙げられる。このような（Ｃ）グリシジルエーテル型エポキシ樹脂の中でも、分子内に２個以上のグルシジルエーテル基を持つものが好ましい。また、このような（Ｃ）グリシジルエーテル型エポキシ樹脂としては、１種を単独で、或いは２種以上のものを混合して使用することが可能である。   The (C) glycidyl ether type epoxy resin used in the adhesive composition includes phenol novolac glycidyl ether type, orthocresol novolac glycidyl ether type, fluorene bisphenol glycidyl ether type, triazine glycidyl ether type, naphthol glycidyl ether type. , Naphthalenediol glycidyl ether type, triphenyl glycidyl ether type, tetraphenyl glycidyl ether type, bisphenol A glycidyl ether type, bisphenol F glycidyl ether type, bisphenol AD glycidyl ether type, bisphenol S glycidyl ether type, trimethylol methane glycidyl ether type, etc. Is given as an example. Among such (C) glycidyl ether type epoxy resins, those having two or more glycidyl ether groups in the molecule are preferable. Moreover, as such (C) glycidyl ether type | mold epoxy resin, it is possible to use 1 type individually or in mixture of 2 or more types.

（Ｂ）フェノキシ樹脂／（Ｃ）グリシジルエーテル型エポキシ樹脂で計算される重量比は０．０２〜１の範囲であることが好ましく、０．１〜０．７の範囲であることがより好ましい。前記重量比が０．０２未満では得られる前記接着剤用組成物をフィルム形状とすることができない傾向にあり、他方、前記重量比が１を越えると、得られるフィルムが脆くなる傾向にある。また、（Ｂ）フェノキシ樹脂／（Ｃ）グリシジルエーテル型エポキシ樹脂で計算される重量比は、より確実に前記接着剤用組成物の１４０℃における溶融粘度を５０Ｐａ・ｓ以下とするという観点からは、０．３〜０．５の範囲であることが特に好ましい。   The weight ratio calculated by (B) phenoxy resin / (C) glycidyl ether type epoxy resin is preferably in the range of 0.02-1, and more preferably in the range of 0.1-0.7. If the weight ratio is less than 0.02, the resulting adhesive composition tends to be in a film shape, whereas if the weight ratio exceeds 1, the resulting film tends to be brittle. In addition, the weight ratio calculated by (B) phenoxy resin / (C) glycidyl ether type epoxy resin is more reliable from the viewpoint of setting the melt viscosity at 140 ° C. of the adhesive composition to 50 Pa · s or less. A range of 0.3 to 0.5 is particularly preferable.

さらに、前記接着剤用組成物に用いられる（Ｄ）エポキシ樹脂硬化剤には、アミン類、酸無水物類、多価フェノール類等の公知の硬化剤を使用することができるが、好ましくは常温以上の所定の温度、例えば（Ｂ）フェノキシ樹脂と（Ｃ）グリシジルエーテル型エポキシ樹脂とその他必要により加えられる樹脂（但し、（Ｄ）エポキシ樹脂硬化剤を除く）からなる樹脂成分が必要な粘着性を示す温度以上で硬化性を発揮し、しかも速硬化性を発揮する潜在性硬化剤である。このような潜在性硬化剤としては、ジシアンジアミド、イミダゾール類、ヒドラジド類、三弗化ホウ素−アミン錯体、アミンイミド、ポリアミン塩及びこれらの変性物、更にマイクロカプセル型のものも使用可能である。これらは、１種を単独で或いは２種以上混合して使用することができる。このような潜在性硬化剤を使用することで室温での長期保存も可能な保存安定性の高いフィルム接着剤用組成物を提供できる。このようなエポキシ樹脂硬化剤の含有量としては（Ｃ）グリシジルエーテル型エポキシ樹脂に対して、通常、０．５〜５０質量％の範囲である。   Furthermore, known curing agents such as amines, acid anhydrides and polyhydric phenols can be used as the (D) epoxy resin curing agent used in the adhesive composition, but preferably at room temperature. The above predetermined temperature, for example, (B) Phenoxy resin, (C) Glycidyl ether type epoxy resin, and other resin added as necessary (however, (D) Except for epoxy resin curing agent) It is a latent curing agent that exhibits curability at a temperature equal to or higher than that and exhibits fast curability. As such a latent curing agent, dicyandiamide, imidazoles, hydrazides, boron trifluoride-amine complexes, amine imides, polyamine salts and modified products thereof, and microcapsules can also be used. These can be used individually by 1 type or in mixture of 2 or more types. By using such a latent curing agent, it is possible to provide a film adhesive composition with high storage stability that can be stored for a long period at room temperature. As content of such an epoxy resin hardening | curing agent, it is the range of 0.5-50 mass% normally with respect to (C) glycidyl ether type epoxy resin.

また、前記接着剤用組成物には、（Ａ）〜（Ｄ）成分以外にも、本発明の効果を損なわない範囲において他の樹脂を少量含有させてもよい。このような他の樹脂としては特に制限されず、例えば、シランカップリング材、表面改質材を挙げることができる。   In addition to the components (A) to (D), the adhesive composition may contain a small amount of other resins as long as the effects of the present invention are not impaired. Such other resins are not particularly limited, and examples thereof include silane coupling materials and surface modifying materials.

以下において、前記接着剤用組成物中に含有される（Ｂ）フェノキシ樹脂と、（Ｃ）グリシジルエーテル型エポキシ樹脂と、必要により加えられる他の樹脂（但し、（Ｄ）エポキシ樹脂硬化剤を除く）とからなる成分を樹脂成分といい、このような樹脂成分を均一な組成物としたときの軟化点を樹脂成分の軟化点という。   In the following, (B) phenoxy resin contained in the adhesive composition, (C) glycidyl ether type epoxy resin, and other resins added as necessary (excluding (D) epoxy resin curing agent) ) Is referred to as a resin component, and the softening point when such a resin component is a uniform composition is referred to as the softening point of the resin component.

（Ｂ）フェノキシ樹脂と、（Ｃ）グリシジルエーテル型エポキシ樹脂との混合比率は、その成分の組み合わせによって変わるものではあるが、得られる半導体素子固定用フィルム状接着剤がより優れた仮圧着性を示すという観点から、前記樹脂成分の混合物の軟化点が、好ましくは１００℃以下、更に好ましくは５０〜１００℃、最も好ましくは６５〜９０℃の範囲となるように（Ｂ）フェノキシ樹脂と、（Ｃ）グリシジルエーテル型エポキシ樹脂とを混合することが好ましい。前記樹脂成分の軟化点が１００℃を超える場合は、得られる半導体素子固定用フィルム状接着剤のシートが硬く、脆くなるとともに仮圧着が困難となる傾向にあり、また、軟化点が５０℃未満の場合、得られる半導体素子固定用フィルム状接着剤の表面にタック性が強く発現してハンドリング性が著しく低下するとともに、常温保存時に前記半導体素子固定用フィルム状接着剤が流動してしまう傾向にある。   Although the mixing ratio of (B) phenoxy resin and (C) glycidyl ether type epoxy resin varies depending on the combination of the components, the obtained film-like adhesive for fixing a semiconductor element has more excellent temporary press bonding properties. From the viewpoint of showing (B) the phenoxy resin so that the softening point of the resin component mixture is preferably in the range of 100 ° C. or less, more preferably 50 to 100 ° C., and most preferably 65 to 90 ° C., ( C) It is preferable to mix with a glycidyl ether type epoxy resin. When the softening point of the resin component exceeds 100 ° C., the resulting sheet of the film-like adhesive for fixing a semiconductor element tends to be hard and brittle and difficult to be temporarily bonded, and the softening point is less than 50 ° C. In this case, the tackiness is strongly expressed on the surface of the obtained semiconductor element fixing film adhesive and the handling property is remarkably lowered, and the semiconductor element fixing film adhesive tends to flow during storage at room temperature. is there.

また、前記接着剤用組成物中の前記樹脂成分中に占める（Ｂ）フェノキシ樹脂の割合としては、５０質量％以下であることが好ましい。（Ｂ）フェノキシ樹脂の割合を５０質量％以下とすることで、前記半導体素子固定用フィルム状接着剤のシートに支持性を持たせることが容易となる傾向にある。また、前記樹脂成分中に占める（Ｂ）フェノキシ樹脂の割合としては、１０〜５０質量％であることがより好ましい。（Ｂ）フェノキシ樹脂の割合が１０質量％未満の場合には、得られる前記半導体素子固定用フィルム状接着剤のシートが脆くなり、樹脂成分の軟化点も低くなるため前記シート単独での支持性が発現しにくくなる傾向にあり、他方、５０質量％を超えると、前記シートが硬くなり、前記シート単独では割れやすくなる傾向にある。更に、前記接着剤用組成物中の前記樹脂成分中に占める（Ｂ）フェノキシ樹脂の割合としては、より確実に前記接着剤用組成物の１４０℃における溶融粘度を５０Ｐａ・ｓ以下とするという観点からは、１０〜３０質量％であることが特に好ましい。   Moreover, it is preferable that it is 50 mass% or less as a ratio of (B) phenoxy resin which occupies in the said resin component in the said composition for adhesive agents. (B) By making the ratio of a phenoxy resin 50 mass% or less, it exists in the tendency which becomes easy to give supportability to the sheet | seat of the said film-like adhesive agent for semiconductor element fixation. Moreover, as a ratio of (B) phenoxy resin which occupies in the said resin component, it is more preferable that it is 10-50 mass%. (B) When the proportion of the phenoxy resin is less than 10% by mass, the sheet of the film-like adhesive for fixing a semiconductor element to be obtained becomes brittle and the softening point of the resin component is lowered, so that the support by the sheet alone is achieved. On the other hand, if it exceeds 50% by mass, the sheet becomes hard, and the sheet alone tends to break. Furthermore, as a ratio of the (B) phenoxy resin occupying in the resin component in the adhesive composition, a viewpoint that the melt viscosity at 140 ° C. of the adhesive composition is more reliably 50 Pa · s or less. Is particularly preferably 10 to 30% by mass.

また、前記接着剤組成物には、他の添加剤として、例えばカップリング剤、酸化防止剤、難燃剤、着色剤、応力緩和剤としてブタジエン系ゴムやシリコーンゴム等を含有することも可能である。このような添加剤の中でもシリカとの界面を補強し高い破壊強度を発現させるとともに接着力を向上するという観点から、前記カップリング剤が好ましい。また、このようなカップリング剤としては、アミノ基、エポキシ基を含有したものを用いることがより好ましい。   Further, the adhesive composition may contain other additives such as a coupling agent, an antioxidant, a flame retardant, a colorant, and a butadiene rubber or silicone rubber as a stress relaxation agent. . Among these additives, the coupling agent is preferable from the viewpoint of reinforcing the interface with silica to develop high fracture strength and improving the adhesive strength. Moreover, as such a coupling agent, it is more preferable to use what contains an amino group and an epoxy group.

本発明にかかる接着剤用フィルムは、前記材料をフィルム化して得られるものである。このようにして、前記材料をフィルム化して得られる本発明にかかる接着剤用フィルムは、常温においてタック性が小さく作業性に優れるものとなる傾向にある。   The adhesive film according to the present invention is obtained by forming the material into a film. Thus, the film for adhesives according to the present invention obtained by forming the material into a film tends to have a small tack property at room temperature and an excellent workability.

また、このようなフィルム化の方法としては特に制限されず、適宜公知の方法を採用することが可能である。以下において、本発明の材料として好適な前記接着剤用組成物をフィルム化する好適な方法を説明する。   Moreover, it does not restrict | limit especially as a method of such a film formation, It is possible to employ | adopt a well-known method suitably. Below, the suitable method of film-forming the said composition for adhesive agents suitable as a material of this invention is demonstrated.

前記接着剤用組成物をフィルム化する好適な方法としては、例えばトルエン、キシレン等の芳香族炭化水素、ＭＩＢＫやＭＥＫ等のケトン系、モノグライム、ジグライム等のエーテル系の単独又は混合した有機溶媒に前記接着剤用組成物を溶解させ、得られたワニスを離型処理されたＰＰ、ＰＥ、ＰＥＴ等の基材（保護フィルム）に塗工し、前記接着剤用組成物の硬化開始温度以下の熱処理を施し、乾燥する方法を挙げることができる。また、このような前記接着剤用組成物から形成される接着剤用フィルムの厚みは、ボイドの発生を防止するという観点から、１０〜１５０μｍの範囲であることが好ましい。   Suitable methods for forming the adhesive composition into a film include, for example, aromatic hydrocarbons such as toluene and xylene, ketones such as MIBK and MEK, ethers such as monoglyme and diglyme, or a mixed organic solvent. The adhesive composition is dissolved, and the resulting varnish is applied to a release-treated base material (protective film) such as PP, PE, or PET, and the adhesive composition has a curing start temperature or lower. A method of performing heat treatment and drying can be mentioned. Moreover, it is preferable that the thickness of the film for adhesives formed from the said composition for adhesives is the range of 10-150 micrometers from a viewpoint of preventing generation | occurrence | production of a void.

以下、図面を参照しながら本発明の半導体素子固定用フィルム状接着剤の好適な実施形態について詳細に説明する。なお、以下の説明及び図面中、同一又は相当する要素には同一の符号を付し、重複する説明は省略する。   Hereinafter, preferred embodiments of the film-like adhesive for fixing a semiconductor element of the present invention will be described in detail with reference to the drawings. In the following description and drawings, the same or corresponding elements are denoted by the same reference numerals, and duplicate descriptions are omitted.

図１は、本発明の半導体素子固定用フィルム状接着剤１０の構成の好適な一実施形態を示す概略縦断面図である。図１に示す本発明の半導体素子固定用フィルム状接着剤１０は複数枚の接着剤用フィルム２０を備える。このように、本発明の半導体素子固定用フィルム状接着剤１０は接着剤用フィルム２０を複数枚積層してなり、且つ、厚さＬが２００μｍ〜２０００μｍのものである。   FIG. 1 is a schematic longitudinal sectional view showing a preferred embodiment of a configuration of a film adhesive 10 for fixing a semiconductor element of the present invention. The semiconductor element fixing film adhesive 10 of the present invention shown in FIG. 1 includes a plurality of adhesive films 20. Thus, the semiconductor element fixing film adhesive 10 of the present invention is formed by laminating a plurality of adhesive films 20 and has a thickness L of 200 μm to 2000 μm.

このような半導体素子固定用フィルム状接着剤の厚さＬが２００μｍ未満では、半導体素子を接着させる基板上に設置されている電子部品の厚さよりも半導体素子固定用フィルム状接着剤の厚さが薄くなるため、前記電子部品によって基板と半導体素子との間に生じてしまう空間を前記半導体素子固定用フィルム状接着剤によって埋め込むことができなくなる。他方、このような半導体素子固定用フィルム状接着剤の厚さＬが２０００μｍを超えると使用時に厚さ方向で十分な熱が伝わらなくなる。   When the thickness L of such a semiconductor element fixing film adhesive is less than 200 μm, the thickness of the semiconductor element fixing film adhesive is larger than the thickness of the electronic component placed on the substrate to which the semiconductor element is bonded. Since the thickness is reduced, the space generated between the substrate and the semiconductor element by the electronic component cannot be embedded by the film-like adhesive for fixing the semiconductor element. On the other hand, if the thickness L of such a semiconductor element fixing film adhesive exceeds 2000 μm, sufficient heat cannot be transferred in the thickness direction during use.

また、このような半導体素子固定用フィルム状接着剤の厚さＬとしては、２５０μｍ〜１８００μｍとすることが好ましく、３００μｍ〜１５００μｍとすることがより好ましい。前記半導体素子固定用フィルム状接着剤の厚さＬが前記下限未満では、基板と半導体素子との間に生じてしまう空間を前記半導体素子固定用フィルム状接着剤によってより十分に埋め込むことができなくなる傾向にあり、他方、前記上限を超えると使用時に厚さ方向で十分な熱を伝えることが困難となる傾向にある。   Moreover, as thickness L of such a film-like adhesive for semiconductor element fixation, it is preferable to set it as 250 micrometers-1800 micrometers, and it is more preferable to set it as 300 micrometers-1500 micrometers. When the thickness L of the film-like adhesive for fixing a semiconductor element is less than the lower limit, the space formed between the substrate and the semiconductor element cannot be filled more sufficiently with the film-like adhesive for fixing the semiconductor element. On the other hand, if it exceeds the upper limit, it tends to be difficult to transfer sufficient heat in the thickness direction during use.

また、本発明の半導体素子固定用フィルム状接着剤１０としては、前記材料の溶融粘度が３００００Ｐａ・ｓ以下となる温度以上であって且つ前記材料の熱硬化開始温度以下である温度範囲内の温度において、前記複数枚の接着剤用フィルム２０を積層したものであることが好ましい。前記材料の溶融粘度が３００００Ｐａ・ｓ以下となる温度以上であって且つ前記材料の熱硬化開始温度以下である温度範囲内の温度において、前記複数枚の接着剤用フィルム２０を積層した場合には、得られる半導体素子固定用フィルム状接着剤中において前記接着剤用フィルム２０の界面２１がなくなる傾向にある。従って、このような条件を満たす本発明の半導体素子固定用フィルム状接着剤１０は、あたかも１枚の接着剤用シートからなるもののように見える。   Further, as the film-like adhesive 10 for fixing a semiconductor element of the present invention, a temperature within a temperature range that is not less than a temperature at which the melt viscosity of the material is 30000 Pa · s or less and not more than a thermosetting start temperature of the material. In the above, it is preferable that the plurality of adhesive films 20 are laminated. When the plurality of adhesive films 20 are laminated at a temperature within a temperature range that is equal to or higher than the temperature at which the melt viscosity of the material is equal to or lower than 30000 Pa · s and equal to or lower than the thermosetting start temperature of the material. In the obtained film-like adhesive for fixing a semiconductor element, the interface 21 of the adhesive film 20 tends to disappear. Therefore, the film-like adhesive 10 for fixing a semiconductor element of the present invention that satisfies such a condition looks as if it consists of a single adhesive sheet.

本発明の半導体素子固定用フィルム状接着剤１０の硬化物の線膨張率は、常温（２３℃）において３０ｐｐｍ以下であることが好ましい。前記線膨張率の値が３０ｐｐｍより高いと、電子部品や基板等との線膨張率の差が大きくなるため、半導体素子固定用フィルム状接着剤１０による電子部品や基板に対する応力を十分に抑制できなくなり、得られる半導体装置の使用時に一部が破壊してしまう傾向にある。また、電子部品や基板の線膨張率に合わせるという観点からは、このような半導体素子固定用フィルム状接着剤１０の硬化物の線膨張率としては１０〜２０ｐｐｍであることがより好ましい。   The linear expansion coefficient of the cured product of the film adhesive 10 for fixing a semiconductor element of the present invention is preferably 30 ppm or less at room temperature (23 ° C.). If the value of the linear expansion coefficient is higher than 30 ppm, the difference in the linear expansion coefficient from the electronic component or the substrate becomes large, so that the stress on the electronic component or the substrate due to the semiconductor element fixing film adhesive 10 can be sufficiently suppressed. There is a tendency that a part of the semiconductor device is destroyed when the obtained semiconductor device is used. Further, from the viewpoint of matching with the linear expansion coefficient of the electronic component or the substrate, the linear expansion coefficient of the cured product of the semiconductor element fixing film adhesive 10 is more preferably 10 to 20 ppm.

接着剤用フィルム２０を複数枚積層する方法としては特に制限されず、前述のようにして接着剤用フィルム２０を予め複数枚調製した後、これらを順次積層させてもよく、前述のようにして本発明の材料を含有するワニスを保護フィルム上に塗工し、乾燥させて接着剤用フィルム２０を調製した後、得られた接着剤用フィルム２０の表面に再度前記ワニスを塗工し、乾燥させて接着剤用フィルム２０を順次積層させてもよい。また、このような接着剤用フィルム２０を複数枚積層する工程は、半導体素子に前記半導体素子固定用フィルム状接着剤１０を供給する際に同時に行ってもよい。   The method for laminating a plurality of adhesive films 20 is not particularly limited, and after preparing a plurality of adhesive films 20 in advance as described above, these may be sequentially laminated, as described above. After coating the varnish containing the material of the present invention on a protective film and drying it to prepare an adhesive film 20, the varnish is applied again to the surface of the obtained adhesive film 20 and dried. Then, the adhesive film 20 may be sequentially laminated. In addition, the step of laminating a plurality of such adhesive films 20 may be performed simultaneously with supplying the semiconductor element fixing film adhesive 10 to a semiconductor element.

このような接着剤用フィルムを複数枚積層する方法としては、前記材料の溶融粘度が３００００Ｐａ・ｓ以下となる温度以上であって且つ前記材料の熱硬化開始温度以下である温度範囲内の温度において、前記複数枚の接着剤用フィルム２０を積層させる方法を採用することが好ましい。前記材料の溶融粘度が３００００Ｐａ・ｓ以下となる温度未満において前記接着剤用フィルムを積層させた場合には、得られる半導体素子固定用フィルム状接着剤１０中において接着剤用フィルム２０の界面２１が残ってしまう傾向にあり、他方、前記材料の熱硬化開始温度を超えた温度において前記接着剤用フィルムを積層させた場合には、接着剤用フィルム２０中の材料が硬化してしまうことから、得られる半導体素子固定用フィルム状接着剤１０が接着剤として機能しなくなる傾向にある。   As a method of laminating a plurality of such adhesive films, at a temperature within a temperature range that is equal to or higher than a temperature at which the melt viscosity of the material is 30000 Pa · s or lower and equal to or lower than a thermosetting start temperature of the material. It is preferable to employ a method of laminating the plurality of adhesive films 20. When the adhesive film is laminated at a temperature lower than the temperature at which the material has a melt viscosity of 30000 Pa · s or less, the interface 21 of the adhesive film 20 is present in the obtained semiconductor element fixing film adhesive 10. On the other hand, when the adhesive film is laminated at a temperature exceeding the thermosetting start temperature of the material, the material in the adhesive film 20 is cured, The obtained film-like adhesive 10 for fixing a semiconductor element tends not to function as an adhesive.

（半導体装置の製造方法）
次に、本発明の半導体装置の製造方法について説明する。すなわち、本発明の半導体装置の製造方法は、上記本発明の半導体素子固定用フィルム状接着剤を用いて、半導体素子を基板に接着することを特徴とする方法である。 (Method for manufacturing semiconductor device)
Next, a method for manufacturing a semiconductor device of the present invention will be described. That is, the method for manufacturing a semiconductor device of the present invention is a method characterized in that the semiconductor element is bonded to a substrate using the film adhesive for fixing a semiconductor element of the present invention.

以下、図面を参照しながら本発明の半導体装置の製造方法の好適な一実施形態について詳細に説明する。なお、以下の説明及び図面中、同一又は相当する要素には同一の符号を付し、重複する説明は省略する。   Hereinafter, a preferred embodiment of a method of manufacturing a semiconductor device of the present invention will be described in detail with reference to the drawings. In the following description and drawings, the same or corresponding elements are denoted by the same reference numerals, and duplicate descriptions are omitted.

図２は、本発明に用いられる基板の好適な一実施形態を示す概略縦断面図である。図２に示す基板３０においては、基板３０上に電子部品４０が搭載されている。   FIG. 2 is a schematic longitudinal sectional view showing a preferred embodiment of a substrate used in the present invention. In the substrate 30 shown in FIG. 2, an electronic component 40 is mounted on the substrate 30.

基板３０としては特に制限されないが、回路が形成された基板を適宜用いることができ、例えば、プリント回路基板（ＰＣＢ）を用いることができる。また、基板３０上に搭載される電子部品４０としては特に制限されないが、例えば抵抗素子、コンデンサー等の受動部品を挙げることができる。   Although it does not restrict | limit especially as the board | substrate 30, the board | substrate with which the circuit was formed can be used suitably, for example, a printed circuit board (PCB) can be used. Further, the electronic component 40 mounted on the substrate 30 is not particularly limited, and examples thereof include passive components such as a resistance element and a capacitor.

また、回路形成された基板３０の上に電子部品４０を搭載する方法も特に制限されず、半田を用いた従来の表面搭載技術や、導電ペーストを用いる方法、スタッドバンプを用いる方法等といった従来公知の方法を適宜採用することができる。   Also, the method for mounting the electronic component 40 on the circuit-formed substrate 30 is not particularly limited, and a conventionally known method such as a conventional surface mounting technique using solder, a method using a conductive paste, a method using a stud bump, or the like. These methods can be employed as appropriate.

次に、このような基板３０を用いた本発明の半導体装置の製造方法の好適な方法を説明する。このような本発明の半導体装置の製造方法の好適な方法は、基本的には、半導体素子に上記本発明の半導体素子固定用フィルム状接着剤を供給する工程（i）と、電子部品が搭載された基板の表面に前記半導体素子固定用フィルム状接着剤の表面が積層されるようにして前記半導体素子を基板に接着する工程（ii）と、前記半導体素子と基板とをボンディングワイヤーを介して接続する工程（iii）と、封止樹脂により基板と半導体素子とを封止して半導体装置を得る工程（iv）とを含む方法である。   Next, a preferred method for manufacturing a semiconductor device of the present invention using such a substrate 30 will be described. A preferred method of manufacturing the semiconductor device of the present invention basically includes the step (i) of supplying the semiconductor element fixing film adhesive of the present invention to the semiconductor element and the electronic component is mounted. A step (ii) of bonding the semiconductor element to the substrate so that the surface of the film-like adhesive for fixing the semiconductor element is laminated on the surface of the substrate, and bonding the semiconductor element and the substrate through a bonding wire A step (iii) of connecting, and a step (iv) of obtaining a semiconductor device by sealing the substrate and the semiconductor element with a sealing resin.

先ず、工程（i）について説明する。すなわち、工程（i）は、半導体素子に上記本発明の半導体素子固定用フィルム状接着剤を供給する工程である。   First, step (i) will be described. That is, the step (i) is a step of supplying the semiconductor element fixing film adhesive of the present invention to the semiconductor element.

図３は、半導体素子固定用フィルム状接着剤積層半導体素子の好適な一実施形態を示す概略縦断面図である。すなわち、図３は、半導体素子５０の裏面５０ａに半導体素子固定用フィルム状接着剤１０が積層されている状態を示す。半導体素子固定用フィルム状接着剤１０は接着剤用フィルム２０が複数枚積層してなる前述の本発明の半導体素子固定用フィルム状接着剤である。更に、このような半導体素子５０としては特に制限されず、公知の半導体素子を適宜用いることができる。   FIG. 3 is a schematic longitudinal sectional view showing a preferred embodiment of a film-like adhesive laminated semiconductor element for fixing a semiconductor element. That is, FIG. 3 shows a state in which the semiconductor element fixing film adhesive 10 is laminated on the back surface 50 a of the semiconductor element 50. The semiconductor element fixing film adhesive 10 is the above-described semiconductor element fixing film adhesive of the present invention, which is formed by laminating a plurality of adhesive films 20. Furthermore, the semiconductor element 50 is not particularly limited, and a known semiconductor element can be used as appropriate.

このような前記本発明の半導体素子固定用フィルム状接着剤１０を半導体素子５０の裏面５０ａに供給する方法としては特に制限されず、半導体素子固定用フィルム状接着剤１０を半導体素子５０の裏面５０ａを積層させることが可能な方法を適宜採用することができる。半導体素子固定用フィルム状接着剤１０を半導体素子５０の裏面５０ａに供給する好適な方法としては、半導体素子５０の裏面５０ａに接着剤用フィルム２０を貼り合せた後、所望の厚さとなるまで順次接着剤用フィルム２０を積層させて半導体素子固定用フィルム状接着剤１０を半導体素子５０の裏面５０ａに供給する方法や、接着剤用フィルム２０を予め目的の厚さに積層して得られる半導体素子固定用フィルム状接着剤１０を半導体素子５０の裏面５０ａに貼り合せて半導体素子固定用フィルム状接着剤１０を半導体素子５０の裏面５０ａに供給する方法等を挙げることができる。   The method for supplying the semiconductor element fixing film adhesive 10 of the present invention to the back surface 50a of the semiconductor element 50 is not particularly limited, and the semiconductor element fixing film adhesive 10 is used as the back surface 50a of the semiconductor element 50. A method capable of laminating can be appropriately employed. As a suitable method for supplying the film-like adhesive 10 for fixing a semiconductor element to the back surface 50a of the semiconductor element 50, the adhesive film 20 is bonded to the back surface 50a of the semiconductor element 50, and then sequentially until a desired thickness is obtained. A method of laminating the adhesive film 20 to supply the semiconductor element fixing film adhesive 10 to the back surface 50a of the semiconductor element 50, or a semiconductor element obtained by laminating the adhesive film 20 to a desired thickness in advance. Examples thereof include a method in which the fixing film adhesive 10 is bonded to the back surface 50 a of the semiconductor element 50 and the semiconductor element fixing film adhesive 10 is supplied to the back surface 50 a of the semiconductor element 50.

また、このような前記本発明の半導体素子固定用フィルム状接着剤１０を半導体素子５０の裏面５０ａに供給する際に用いる装置としては特に制限されず、例えば、ロールラミネーター等のような公知の装置を適宜用いることができる。   Further, the apparatus used for supplying the semiconductor element fixing film adhesive 10 of the present invention to the back surface 50a of the semiconductor element 50 is not particularly limited. For example, a known apparatus such as a roll laminator is used. Can be used as appropriate.

また、このような半導体素子固定用フィルム状接着剤１０を半導体素子５０の裏面５０ａに張り合わせる際には、接着剤用フィルム２０を構成する材料の溶融粘度が３００００Ｐａ・ｓ以下となる温度以上であって且つ前記材料の熱硬化開始温度以下である温度範囲内の温度において半導体素子固定用フィルム状接着剤１０を張り合わせることが好ましい。このような温度条件下において半導体素子５０に半導体素子固定用フィルム状接着剤１０を張り合わせることで、半導体素子固定用フィルム状接着剤１０中において、接着剤用フィルム２０の界面がなくなる傾向にある。また、このような温度条件が前記材料の溶融粘度が３００００Ｐａ・ｓ以下となる温度未満である場合には、半導体素子固定用フィルム状接着剤１０中において接着剤用フィルム２０の界面が残ってしまう傾向にあり、他方、熱硬化開始温度を超えると、半導体素子固定用フィルム状接着剤１０を半導体素子５０の裏面５０ａに張り合わせる段階において、半導体素子固定用フィルム状接着剤１０が硬化してしまい、半導体素子を基板に接着する際に基板に対する接着性が低下する傾向にある。   In addition, when such a semiconductor element fixing film adhesive 10 is bonded to the back surface 50a of the semiconductor element 50, the material constituting the adhesive film 20 has a melt viscosity of 30000 Pa · s or less. It is preferable that the film-like adhesive 10 for fixing a semiconductor element is laminated at a temperature within a temperature range that is equal to or lower than the thermosetting start temperature of the material. By bonding the semiconductor element fixing film adhesive 10 to the semiconductor element 50 under such temperature conditions, the interface of the adhesive film 20 tends to disappear in the semiconductor element fixing film adhesive 10. . In addition, when such a temperature condition is lower than the temperature at which the melt viscosity of the material becomes 30000 Pa · s or less, the interface of the adhesive film 20 remains in the semiconductor element fixing film adhesive 10. On the other hand, if the thermosetting start temperature is exceeded, the semiconductor element fixing film adhesive 10 is cured at the stage where the semiconductor element fixing film adhesive 10 is bonded to the back surface 50a of the semiconductor element 50. When the semiconductor element is bonded to the substrate, the adhesion to the substrate tends to be lowered.

また、本発明の半導体素子固定用フィルム状接着剤１０を半導体素子５０の裏面５０ａに供給した後においては、半導体素子固定用フィルム状接着剤１０面にダイシングフィルムを貼り合せ、ダイシングマシンにより半導体素子を個片化することにより、裏面に接着剤が供給された半導体素子固定用フィルム状接着剤積層半導体素子を得ることができる。   In addition, after supplying the film-like adhesive 10 for fixing a semiconductor element of the present invention to the back surface 50a of the semiconductor element 50, a dicing film is bonded to the surface of the film-like adhesive 10 for fixing a semiconductor element, and the semiconductor element is obtained by a dicing machine. Can be obtained to obtain a film-like adhesive laminated semiconductor element for fixing a semiconductor element in which an adhesive is supplied to the back surface.

このようなダイシングフィルムは特に制限されず、適宜公知のダイシングフィルムを用いることができる。更に、前記ダイシングマシンも特に制限されず、適宜公知のダイシングマシンを用いることができる。   Such a dicing film is not particularly limited, and a known dicing film can be appropriately used. Further, the dicing machine is not particularly limited, and a known dicing machine can be used as appropriate.

次に、工程（ii）〜（iv）について説明する。すなわち、工程（ii）は電子部品が搭載された基板の表面に前記半導体素子固定用フィルム状接着剤の表面が積層されるようにして前記半導体素子を基板に実装する工程であり、工程（iii）は前記半導体素子と基板とをボンディングワイヤーを介して接続する工程であり、工程（iv）は、封止樹脂により基板と半導体素子とを封止して半導体装置を得る工程である。   Next, steps (ii) to (iv) will be described. That is, step (ii) is a step of mounting the semiconductor element on the substrate so that the surface of the film-like adhesive for fixing the semiconductor element is laminated on the surface of the substrate on which the electronic component is mounted. ) Is a step of connecting the semiconductor element and the substrate through a bonding wire, and step (iv) is a step of sealing the substrate and the semiconductor element with a sealing resin to obtain a semiconductor device.

図４（ａ）〜（ｄ）は、このような工程（ii）〜（iv）の好適な一実施形態を示す概略図である。図４（ａ）は電子部品４０が搭載されている基板３０を示し、図４（ｂ）は電子部品４０が搭載された基板３０の表面に半導体素子５０が実装された状態を示し、図４（ｃ）は半導体素子５０がボンディングワイヤー６０を介して基板３０と接続された状態を示し、図４（ｄ）は基板３０と半導体素子５０とが封止樹脂７０で封止された半導体装置８０を示す。なお、図４（ａ）及び（ｂ）が工程（ii）に対応し、図４（ｃ）が工程（iii）に対応し、図４（ｄ）が工程（iv）に対応する。   4A to 4D are schematic views showing a preferred embodiment of such steps (ii) to (iv). 4A shows the substrate 30 on which the electronic component 40 is mounted, and FIG. 4B shows the state in which the semiconductor element 50 is mounted on the surface of the substrate 30 on which the electronic component 40 is mounted. FIG. 4C shows a state in which the semiconductor element 50 is connected to the substrate 30 through the bonding wire 60, and FIG. 4D shows a semiconductor device 80 in which the substrate 30 and the semiconductor element 50 are sealed with a sealing resin 70. Indicates. 4A and 4B correspond to step (ii), FIG. 4C corresponds to step (iii), and FIG. 4D corresponds to step (iv).

工程（ii）においては、先ず、図４（ａ）に示すような基板３０を準備する。このような基板３０は、前述の図２に示す基板３０と同様のものであり、前述のようにして電子部品４０を基板３０に搭載させて得られるものである。そして、前述の図３に示すような半導体素子固定用フィルム状接着剤１０積層半導体素子５０を準備する。   In step (ii), first, a substrate 30 as shown in FIG. Such a substrate 30 is the same as the substrate 30 shown in FIG. 2 described above, and is obtained by mounting the electronic component 40 on the substrate 30 as described above. Then, a semiconductor element fixing film adhesive 10 laminated semiconductor element 50 as shown in FIG. 3 is prepared.

次に、図４（ｂ）に示すように、電子部品４０が搭載された基板３０の表面に半導体素子固定用フィルム状接着剤１０の表面が積層されるようにして半導体素子５０を基板３０上に実装する（工程（ii））。   Next, as shown in FIG. 4B, the semiconductor element 50 is placed on the substrate 30 such that the surface of the film adhesive 10 for fixing the semiconductor element is laminated on the surface of the substrate 30 on which the electronic component 40 is mounted. (Step (ii)).

このような半導体素子５０を基板３０上に実装する方法としては特に制限されず、フィルム状の半導体素子固定用接着剤を利用して半導体素子を基板又は電子部品に接着させることが可能な従来の方法を適宜採用することができる。このような実装方法としては、上部からの加熱機能を有するフリップチップボンダーを用いた実装技術を用いる方法、下部からのみの加熱機能を有するダイボンダーを用いる方法、ラミネーターを用いる方法等の従来公知の加熱、加圧方法を挙げることができる。このように、半導体素子固定用フィルム状接着剤１０を用いて半導体素子５０を基板３０上に実装することで、電子部品４０により生じる基板上の凹凸に、半導体素子固定用フィルム状接着剤１０を追従させながら基板と半導体素子とを接着することが可能となり、図４（ｂ）に示すように、半導体素子と基板との間を全て半導体素子固定用フィルム状接着剤で覆うことができる。すなわち、半導体素子固定用フィルム状接着剤１０を用いることで、半導体素子固定用フィルム状接着剤１０で基板の凹凸を埋め込むことができるため、基板と半導体素子との間に空間が生じることがなく半導体素子を基板に固定することが可能となる。   A method for mounting the semiconductor element 50 on the substrate 30 is not particularly limited, and a conventional semiconductor element can be bonded to a substrate or an electronic component using a film-like semiconductor element fixing adhesive. A method can be appropriately employed. As such a mounting method, a conventionally known heating method such as a method using a mounting technique using a flip chip bonder having a heating function from the upper part, a method using a die bonder having a heating function only from the lower part, a method using a laminator, etc. And a pressurizing method. Thus, by mounting the semiconductor element 50 on the substrate 30 using the semiconductor element fixing film-like adhesive 10, the semiconductor element fixing film-like adhesive 10 is formed on the unevenness on the substrate caused by the electronic component 40. The substrate and the semiconductor element can be bonded while being followed, and as shown in FIG. 4B, the entire space between the semiconductor element and the substrate can be covered with a film-like adhesive for fixing the semiconductor element. That is, by using the film adhesive 10 for fixing a semiconductor element, the unevenness of the substrate can be embedded with the film adhesive 10 for fixing a semiconductor element, so that no space is generated between the substrate and the semiconductor element. The semiconductor element can be fixed to the substrate.

本発明の半導体装置の製造方法においては、半導体素子５０を基板３０上に実装する際の温度条件を半導体素子固定用フィルム状接着剤１０の溶融粘度が５０Ｐａ・ｓ以下（より好ましくは１〜５０Ｐａ・ｓの範囲）となる温度で実装することが好ましい。このような温度条件において、半導体素子を基板上に実装することで、基板上の凹凸を半導体素子固定用フィルム状接着剤でより効率よく埋め込みながら半導体素子を基板に固定することが可能となる。なお、このような条件を満たす具体的な温度範囲は半導体素子固定用フィルム状接着剤１０を製造する際に選択する材料の種類によって異なるものではあるが、例えば、前述の本発明の半導体素子固定用フィルム状接着剤に用いられた材料が前記接着剤用組成物である場合には１４０〜１８０℃程度であることが好ましい。   In the method for manufacturing a semiconductor device of the present invention, the temperature condition for mounting the semiconductor element 50 on the substrate 30 is set such that the melt viscosity of the film adhesive 10 for fixing a semiconductor element is 50 Pa · s or less (more preferably 1 to 50 Pa). It is preferable to mount at a temperature in the range of s. By mounting the semiconductor element on the substrate under such temperature conditions, it is possible to fix the semiconductor element to the substrate while more efficiently filling the irregularities on the substrate with the film-like adhesive for fixing the semiconductor element. The specific temperature range satisfying such conditions varies depending on the type of material selected when manufacturing the semiconductor element fixing film adhesive 10. For example, the above-described semiconductor element fixing of the present invention is described below. When the material used for the film adhesive is an adhesive composition, the temperature is preferably about 140 to 180 ° C.

また、半導体素子５０を基板３０上に実装する際の圧力条件は用いる半導体素子固定用フィルム状接着剤１０を製造する際に選択する材料によっても異なるものではあるが、一般に０．１〜１ｋｇｆ／ｃｍ２程度であることが好ましい。前記圧力が前記下限未満では、電子部品により生じる基板上の凹凸を半導体素子固定用フィルム状接着剤で埋め込むために時間がかかり、更にはボイドの発生を十分に防止できなくなる傾向にあり、他方前記上限を超えると、接着剤のはみ出しを制御できなくなる傾向にある。 Moreover, although the pressure conditions for mounting the semiconductor element 50 on the substrate 30 vary depending on the material selected when manufacturing the semiconductor element fixing film adhesive 10 to be used, generally 0.1 to 1 kgf / It is preferably about cm 2 . If the pressure is less than the lower limit, it takes time to bury the irregularities on the substrate caused by the electronic component with the film-like adhesive for fixing the semiconductor element, and further, it tends not to be able to sufficiently prevent the occurrence of voids, When the upper limit is exceeded, the sticking out of the adhesive tends to be uncontrollable.

次に、工程（iii）においては、図４（ｃ）に示すように、半導体素子５０と基板３０とをボンディングワイヤー６０を介して接続する。このような半導体素子５０と基板３０とをボンディングワイヤー６０を介して接続する方法としては特に制限されず、従来公知の方法、例えば、ワイヤーボンディング方式の方法、ＴＡＢ（Ｔａｐｅ Ａｕｔｏｍａｔｅｄ Ｂｏｎｄｉｎｇ）方式の方法等を適宜採用することができる。   Next, in step (iii), as shown in FIG. 4C, the semiconductor element 50 and the substrate 30 are connected via the bonding wire 60. A method for connecting the semiconductor element 50 and the substrate 30 via the bonding wire 60 is not particularly limited, and a conventionally known method, for example, a wire bonding method, a TAB (Tape Automated Bonding) method, or the like. Can be adopted as appropriate.

次に、工程（iv）においては、図４（ｄ）に示すように、封止樹脂７０により基板３０と半導体素子５０とを封止して半導体装置８０を得る。封止樹脂７０としては特に制限されず、半導体装置の製造に用いることができる適宜公知の樹脂を用いることができる。また、封止樹脂７０を用いる方法としても特に制限されず、適宜公知の方法を採用することが可能である。   Next, in step (iv), as shown in FIG. 4D, the substrate 30 and the semiconductor element 50 are sealed with a sealing resin 70 to obtain the semiconductor device 80. The sealing resin 70 is not particularly limited, and a known resin that can be used for manufacturing a semiconductor device can be used as appropriate. Moreover, it does not restrict | limit especially as a method using sealing resin 70, It is possible to employ | adopt a well-known method suitably.

このような本発明の半導体装置の製造方法によれば、電子部品４０によって生じる基板３０上の凹凸が半導体素子固定用フィルム状接着剤１０によって埋め込むことができるため、基板３０と半導体素子５０との間に空間を生じることなく半導体素子５０を基板３０に固定することができ、これによって、容積を抑制したまま電子部品４０を効率よく内蔵させた半導体装置８０を製造することが可能となる。   According to such a method for manufacturing a semiconductor device of the present invention, the unevenness on the substrate 30 caused by the electronic component 40 can be embedded with the film adhesive 10 for fixing the semiconductor element. The semiconductor element 50 can be fixed to the substrate 30 without creating a space in between, so that it is possible to manufacture the semiconductor device 80 in which the electronic component 40 is efficiently incorporated while the volume is suppressed.

（半導体装置）
次に、本発明の半導体装置について説明する。すなわち、本発明の半導体装置は、半導体素子と、基板と、前記半導体素子と基板とを接着している上記本発明の半導体素子固定用フィルム状接着剤とを備えることを特徴とするものである。 (Semiconductor device)
Next, the semiconductor device of the present invention will be described. That is, a semiconductor device according to the present invention includes a semiconductor element, a substrate, and the film-like adhesive for fixing a semiconductor element according to the present invention, which bonds the semiconductor element and the substrate. .

以下、図面を参照しながら本発明の半導体装置の好適な一実施形態について詳細に説明する。なお、以下の説明及び図面中、同一又は相当する要素には同一の符号を付し、重複する説明は省略する。   Hereinafter, a preferred embodiment of a semiconductor device of the present invention will be described in detail with reference to the drawings. In the following description and drawings, the same or corresponding elements are denoted by the same reference numerals, and duplicate descriptions are omitted.

図５は、本発明の半導体装置の好適な一実施形態を示す概略縦断面図である。図５に示す本発明の半導体装置８０は、基本的には、半導体素子５０と、基板３０と、前記半導体素子と基板とを接着している上記本発明の半導体素子固定用フィルム状接着剤１０とを備える。また、図５に示す半導体装置においては、基板３０上に電子部品４０が搭載されている。更に、基板３０と半導体素子５０とがボンディングワイヤー６０を介して接続されている。また、図５に示す半導体装置においては、半導体素子５０と、基板３０と、前記半導体素子と基板とを接着している半導体素子固定用フィルム状接着剤１０とが封止樹脂７０に覆われている。   FIG. 5 is a schematic longitudinal sectional view showing a preferred embodiment of the semiconductor device of the present invention. A semiconductor device 80 of the present invention shown in FIG. 5 basically has a semiconductor element 50, a substrate 30, and the semiconductor element fixing film adhesive 10 of the present invention, which bonds the semiconductor element and the substrate. With. In the semiconductor device shown in FIG. 5, the electronic component 40 is mounted on the substrate 30. Furthermore, the substrate 30 and the semiconductor element 50 are connected via a bonding wire 60. In the semiconductor device shown in FIG. 5, the semiconductor element 50, the substrate 30, and the semiconductor element fixing film adhesive 10 that bonds the semiconductor element and the substrate are covered with the sealing resin 70. Yes.

このような半導体装置に用いられる半導体素子固定用フィルム状接着剤１０、基板３０、電子部品４０、半導体素子５０等については前述の通りであり、用途に応じて適宜基板や電子部品等を選択して配置することができる。また、このような半導体装置の製造方法も前述の通りである。   The film-like adhesive 10 for fixing a semiconductor element, the substrate 30, the electronic component 40, the semiconductor element 50, etc. used in such a semiconductor device are as described above. Can be arranged. The method for manufacturing such a semiconductor device is also as described above.

このような半導体装置は、上記本発明の半導体素子固定用フィルム状接着剤を用いているため、容積を抑制したまま電子部品４０を効率よく内蔵させることができることから、特に、携帯電話等の小型化が求められる用途の電子機器等に好適に用いることができる。   Since such a semiconductor device uses the film-like adhesive for fixing a semiconductor element of the present invention, the electronic component 40 can be efficiently incorporated while suppressing the volume. Therefore, it can be suitably used for electronic devices and the like for which applications are required.

以下、実施例に基づいて本発明をより具体的に説明するが、本発明は以下の実施例に限定されるものではない。   EXAMPLES Hereinafter, although this invention is demonstrated more concretely based on an Example, this invention is not limited to a following example.

（実施例１）
先ず、ロールラミネーターを用いて、厚さ１５０μｍの半導体機能面の裏面に、温度５０℃、荷重０．３ＭＰａの条件で、厚さ１３０μｍの接着剤用フィルム（新日鐵化学製、商品名「ＮＥＸ−１３０Ｃ」）を配置した。 Example 1
First, using a roll laminator, an adhesive film having a thickness of 130 μm (made by Nippon Steel Chemical Co., Ltd., trade name “NEX”) is formed on the back surface of the semiconductor functional surface having a thickness of 150 μm under the conditions of a temperature of 50 ° C. and a load of 0.3 MPa. -130C ").

次に、ロールラミネーターを用いて、厚さ１５０μｍの半導体機能面の裏面に配置された前記接着剤用フィルムの表面に、温度５０℃、荷重０．３ＭＰａの条件で、厚さ１３０μｍの接着剤用フィルム（新日鐵化学製、商品名「ＮＥＸ−１３０Ｃ」）を更に３枚貼り合わせた。このようにして得られた半導体素子固定用フィルム状接着剤の厚さは５２０μｍであった。なお、温度５０℃における前記接着剤用フィルムに用いた材料の溶融粘度は１７０００Ｐａ・ｓであり、得られた半導体素子固定用フィルム状接着剤中において、接着剤用フィルムの界面が見えなくなっていた。   Next, using a roll laminator, the surface of the adhesive film disposed on the back surface of the semiconductor functional surface having a thickness of 150 μm is used for an adhesive having a thickness of 130 μm at a temperature of 50 ° C. and a load of 0.3 MPa. Three more films (trade name “NEX-130C” manufactured by Nippon Steel Chemical Co., Ltd.) were bonded together. The film-like adhesive for fixing a semiconductor element thus obtained had a thickness of 520 μm. The melt viscosity of the material used for the adhesive film at a temperature of 50 ° C. was 17000 Pa · s, and the interface of the adhesive film was not visible in the obtained semiconductor element fixing film adhesive. .

その後、ロールラミネーターを用いて、半導体素子固定用フィルム状接着剤面にダイシングフィルム（リンテック製、商品名「Ｄ−１１」）を貼り合せた後、ダイシングマシンにより半導体素子を個片化することにより、裏面に接着剤が供給された半導体素子固定用フィルム状接着剤積層半導体素子を得た。   Thereafter, using a roll laminator, a dicing film (trade name “D-11”, manufactured by Lintec, Inc.) is bonded to the film-like adhesive surface for fixing the semiconductor element, and then the semiconductor element is separated into pieces by a dicing machine. Then, a film-like adhesive laminated semiconductor element for fixing a semiconductor element having an adhesive supplied on the back surface was obtained.

次に、ＦＲ−５基板（日立化成社製の商品名「ＭＣＬ−Ｅ−６７９Ｆ」）を用いて作成されたプリント配線板上の所定の端子に半田ペーストを印刷し、半田ペースト印刷済み端子に対応する部位に長辺６００μｍ、短辺３００μｍの抵抗素子（以下において、「電子部品」という。）３０個をＳＭＴペーストにより仮固定した後、リフロー炉に投入し、電子部品とプリント配線板を電気的に接続させて、基板上に電子部品を搭載させた。この際の電子部品の高さは、平均で２３０μｍであった。   Next, a solder paste is printed on a predetermined terminal on a printed wiring board prepared using an FR-5 board (trade name “MCL-E-679F” manufactured by Hitachi Chemical Co., Ltd.), and the solder paste printed terminal is printed. Thirty resistance elements (hereinafter referred to as “electronic components”) having a long side of 600 μm and a short side of 300 μm are temporarily fixed with a SMT paste to the corresponding part, and then placed in a reflow furnace to electrically connect the electronic components and the printed wiring board. And electronic components were mounted on the substrate. The height of the electronic component at this time was 230 μm on average.

そして、半導体素子固定用フィルム状接着剤積層半導体素子を１６０℃に加熱しながら荷重０．０６ＭＰａの条件で、電子部品が搭載された基板上に実装した。この際、前述の測定方法により測定した半導体素子固定用フィルム状接着剤の溶融粘度は３０Ｐａ・ｓであった。このようにして前記半導体素子固定用フィルム状接着剤により、電子部品が搭載された基板上に半導体素子が固定され、電子部品が搭載された基板上に半導体素子が実装された構造物を得た。このようにして得られた構造物に対して、ＩＲ観察と断面観察とを行ったところ、得られた構造物中にはボイドがないことが確認された。また、このような構造物においては、前記電子部品により生じる基板上の凹凸が前記半導体素子固定用フィルム状接着剤により埋め込まれていることが確認された。   Then, the film-like adhesive laminated semiconductor element for fixing the semiconductor element was mounted on the substrate on which the electronic component was mounted under the condition of a load of 0.06 MPa while being heated to 160 ° C. At this time, the melt viscosity of the film-like adhesive for fixing a semiconductor element measured by the above-described measuring method was 30 Pa · s. In this way, the semiconductor element fixing film-like adhesive fixed the semiconductor element on the substrate on which the electronic component was mounted, and obtained a structure in which the semiconductor element was mounted on the substrate on which the electronic component was mounted. . The structure thus obtained was subjected to IR observation and cross-sectional observation, and it was confirmed that there was no void in the obtained structure. Moreover, in such a structure, it was confirmed that the unevenness | corrugation on the board | substrate produced by the said electronic component was embedded with the said film-like adhesive for semiconductor element fixation.

次に、このようにして得られた構造物を用いて、半導体素子と前記プリント回路基板とをボンディングワイヤーを介して電気的に接続し、封止樹脂によって封止した。このようにして得られた半導体装置に対して動作確認を行ったが問題がないものであることが確認された。   Next, using the structure thus obtained, the semiconductor element and the printed circuit board were electrically connected via a bonding wire and sealed with a sealing resin. The operation of the semiconductor device thus obtained was confirmed, but it was confirmed that there was no problem.

このような結果からも明らかなように、本発明の半導体素子固定用フィルム状接着剤においては、従来の半導体素子固定用接着剤にない厚さのフィルム状の接着剤とすることができ、ボイドなく、しかも前記電子部品により生じる基板上の凹凸を、前記半導体素子固定用フィルム状接着剤により埋め込みながら基板と半導体素子とを接着することが可能となることが確認された。   As is clear from these results, the film-like adhesive for fixing a semiconductor element of the present invention can be made into a film-like adhesive having a thickness that is not found in conventional adhesives for fixing a semiconductor element. In addition, it was confirmed that the substrate and the semiconductor element can be bonded while embedding the unevenness on the substrate caused by the electronic component with the film adhesive for fixing the semiconductor element.

以上説明したように、本発明によれば、半導体素子固定用フィルム状接着剤であるにも拘らず、その厚さを基板上に設置される電子部品の厚さよりも厚くしながらボイドの発生を十分に防止することができ、しかも基板上に設置された電子部品の厚さによって基板と半導体素子との間に生じてしまう空間をその半導体素子固定用フィルム状接着剤によって十分に埋め込むことができ、凹凸のある基板に半導体素子を効率よく且つ確実に接着することが可能な半導体素子固定用フィルム状接着剤、それを用いた半導体装置、及び、その半導体装置の製造方法を提供することが可能となる。   As described above, according to the present invention, although it is a film-like adhesive for fixing a semiconductor element, voids are generated while making its thickness thicker than the thickness of an electronic component installed on a substrate. It can be sufficiently prevented, and the space formed between the substrate and the semiconductor element depending on the thickness of the electronic component installed on the substrate can be sufficiently filled with the film-like adhesive for fixing the semiconductor element. It is possible to provide a film-like adhesive for fixing a semiconductor element capable of efficiently and reliably bonding a semiconductor element to an uneven substrate, a semiconductor device using the same, and a method of manufacturing the semiconductor device It becomes.

したがって、本発明の半導体素子固定用フィルム状接着剤は、半導体素子を凹凸のある基板上にボイドの発生を防止しながら効率よく接着することができるため、半導体装置の小型化を図れる半導体素子固定用フィルム状接着剤として有用である。   Therefore, the film-like adhesive for fixing a semiconductor element of the present invention can efficiently bond a semiconductor element on an uneven substrate while preventing the generation of voids. It is useful as a film adhesive.

半導体素子固定用フィルム状接着剤の構成の好適な一実施形態を示す概略縦断面図である。It is a schematic longitudinal cross-sectional view which shows suitable one Embodiment of a structure of the film adhesive for semiconductor element fixation. 本発明に用いられる基板の好適な一実施形態を示す概略縦断面図である。It is a schematic longitudinal cross-sectional view which shows suitable one Embodiment of the board | substrate used for this invention. 半導体素子固定用フィルム状接着剤積層半導体素子の好適な一実施形態を示す概略縦断面図である。It is a schematic longitudinal cross-sectional view which shows suitable one Embodiment of the film-form adhesive laminated semiconductor element for semiconductor element fixation. 本発明の半導体装置の製造方法の好適な一実施形態を示す工程概略図である。It is process schematic which shows suitable one Embodiment of the manufacturing method of the semiconductor device of this invention. 本発明の半導体装置の好適な一実施形態を示す概略縦断面図である。It is a schematic longitudinal cross-sectional view which shows suitable one Embodiment of the semiconductor device of this invention.

符号の説明Explanation of symbols

１０…半導体素子固定用フィルム状接着剤、２０…接着剤用フィルム、２１…接着剤用フィルムの界面、３０…基板、４０…電子部品、５０…半導体素子、５０ａ…半導体素子の裏面、６０…ボンディングワイヤー、７０…封止樹脂、８０…半導体装置。   DESCRIPTION OF SYMBOLS 10 ... Film adhesive for semiconductor element fixation, 20 ... Adhesive film, 21 ... Interface of adhesive film, 30 ... Substrate, 40 ... Electronic component, 50 ... Semiconductor element, 50a ... Back surface of semiconductor element, 60 ... Bonding wire, 70: sealing resin, 80: semiconductor device.

Claims (5)

１４０℃における溶融粘度が５０Ｐａ・ｓ以下である材料からなる接着剤用フィルムを複数枚積層してなるものであり、且つ、厚さが２００μｍ〜２０００μｍであることを特徴とする半導体素子固定用フィルム状接着剤。   A film for fixing a semiconductor element, comprising a plurality of adhesive films made of a material having a melt viscosity at 140 ° C. of 50 Pa · s or less and a thickness of 200 μm to 2000 μm. Adhesive. 前記材料が、（Ａ）シリカと、（Ｂ）フェノキシ樹脂と、（Ｃ）グリシジルエーテル型エポキシ樹脂と、（Ｄ）エポキシ樹脂硬化剤とを含有し、（Ａ）シリカの含有量が５０〜８０質量％であり、且つ、（Ｂ）フェノキシ樹脂と（Ｃ）グリシジルエーテル型エポキシ樹脂との重量比（（Ｂ）フェノキシ樹脂／（Ｃ）グリシジルエーテル型エポキシ樹脂）が０．０２〜１の範囲である接着剤用組成物であることを特徴とする請求項１に記載の半導体素子固定用フィルム状接着剤。   The material contains (A) silica, (B) phenoxy resin, (C) glycidyl ether type epoxy resin, and (D) epoxy resin curing agent, and (A) the content of silica is 50-80. And the weight ratio of (B) phenoxy resin to (C) glycidyl ether type epoxy resin ((B) phenoxy resin / (C) glycidyl ether type epoxy resin) is in the range of 0.02-1. The film adhesive for fixing a semiconductor element according to claim 1, wherein the adhesive is a composition for an adhesive. 前記材料の溶融粘度が３００００Ｐａ・ｓ以下となる温度以上であって且つ前記材料の熱硬化開始温度以下である温度範囲内の温度において、前記複数枚の接着剤用フィルムを積層したものであることを特徴とする請求項１又は２に記載の半導体素子固定用フィルム状接着剤。   The plurality of adhesive films are laminated at a temperature within a temperature range where the melt viscosity of the material is 30000 Pa · s or less and not more than the thermosetting start temperature of the material. The film adhesive for fixing a semiconductor element according to claim 1 or 2. 請求項１〜３のうちのいずれか一項に記載の半導体素子固定用フィルム状接着剤を用いて、半導体素子を基板に接着することを特徴とする半導体装置の製造方法。   A method for manufacturing a semiconductor device, comprising: bonding a semiconductor element to a substrate using the film-like adhesive for fixing a semiconductor element according to claim 1. 半導体素子と、基板と、前記半導体素子と基板とを接着している請求項１〜３のうちのいずれか一項に記載の半導体素子固定用フィルム状接着剤とを備えることを特徴とする半導体装置。   A semiconductor element comprising: a semiconductor element; a substrate; and the semiconductor element fixing film adhesive according to any one of claims 1 to 3, which bonds the semiconductor element and the substrate. apparatus.
JP2005248154A 2005-08-29 2005-08-29 Film adhesive for fixing semiconductor element, semiconductor device using the same and method for manufacturing the semiconductor device Withdrawn JP2007063333A (en)

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TW095130217A TWI384592B (en) 2005-08-29 2006-08-17 Filmy adhesive for fixing semiconductor element, semeconductor device using the same and manufacturing method of semiconductor device
KR1020060081632A KR101253107B1 (en) 2005-08-29 2006-08-28 Film like adhesive for attaching semiconductor element, semiconductor device using the same, and method for manufacturing the semiconductor device

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JP2014216488A (en) * 2013-04-25 2014-11-17 日東電工株式会社 Adhesive film, dicing/die bonding film, method of manufacturing semiconductor device and semiconductor device
CN104726032A (en) * 2013-12-24 2015-06-24 日东电工株式会社 Adhesive film, dicing/die-bonding film, method for manufacturing semiconductor device, and semiconductor device
JP2016058457A (en) * 2014-09-05 2016-04-21 古河電気工業株式会社 Film-shaped adhesive, semiconductor package arranged by use of film-shaped adhesive and method for manufacturing the same
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CN111819671A (en) * 2018-03-06 2020-10-23 日立化成株式会社 Semiconductor device and method for manufacturing the same

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