KR910020872A - 소자분리구조 및 배선구조의 개량된 반도체 장치 - Google Patents
소자분리구조 및 배선구조의 개량된 반도체 장치 Download PDFInfo
- Publication number
- KR910020872A KR910020872A KR1019910009064A KR910009064A KR910020872A KR 910020872 A KR910020872 A KR 910020872A KR 1019910009064 A KR1019910009064 A KR 1019910009064A KR 910009064 A KR910009064 A KR 910009064A KR 910020872 A KR910020872 A KR 910020872A
- Authority
- KR
- South Korea
- Prior art keywords
- region
- semiconductor device
- substrate
- semiconductor
- metal wiring
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 14
- 238000002955 isolation Methods 0.000 title claims 6
- 239000000758 substrate Substances 0.000 claims 9
- 229910052751 metal Inorganic materials 0.000 claims 7
- 239000002184 metal Substances 0.000 claims 7
- 229910052782 aluminium Inorganic materials 0.000 claims 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 3
- 239000013078 crystal Substances 0.000 claims 1
- 238000003384 imaging method Methods 0.000 claims 1
- 239000012535 impurity Substances 0.000 claims 1
- 238000001465 metallisation Methods 0.000 claims 1
- 239000007787 solid Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/761—PN junctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
- H01L21/743—Making of internal connections, substrate contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제3도는 본 발명의 제1의 실시예를 도시하는 반도체 장치의 주요부분의 구성도.
Claims (8)
- 불순물이 도프된 반도체 기판상에 소자영역과, 소자분리영역이 형성되어, 상기 소자영역의 표면 또는 상기 기판의 이면에 금속배선이 형성되어 있는 소자분리영역을 가지는 반도체 장치에 있어서, 상기 소자분리 영역내에 상기 금속배선에 접속하는 세로방향으로 뻗은 알루미늄을 주성분으로 하는 영역이 형성되어 있는 것을 특징으로 하는 소자분리 구조영역을 가지는 반도체 장치.
- 절연기판상에 소장영역과, 세로방향으로 연출하는 소자분리영역으로 되는 알루미늄을 주성분으로 하는 금속영역을 가지고, 금속영역의 한끝부가 상기 절연기판에 맞닿는 동시에, 그의 다른 끝부가 표면에 노출하도록 형성되어 있는 것을 특징으로 하는 소자분리 구조영역을 가지는 반도체 장치.
- 제1항 또는 제2항에 있어서, 상기 반도체 장치는 고체촬상 장치인 것을 특징으로 하는 반도체 장치.
- 적어도 2개의 기능소자를 가지는 반도체 기판의 내부에 상기 적어도 2개의 기능소자를 접속하기 위한 매립금속배선층을 설치한 것을 특징으로 하는 반도체 장치.
- 제4항에 있어서, 상기 금속배선층을 적층한 것을 특징으로 하는 반도체 장치.
- 제4항 또는 제5항에 있어서, 상기 반도체 기판내에 설치된 금속 배선층은 단결정알루미늄에 의해 형성된 것을 특징으로 하는 반도체 장치.
- 제6항에 있어서, 상기 반도체 기판과 이 기판내에 설치된 금속배선층이란 그 기판의 유전형과 반대의 도전형의 층영역에 의해서 전기적으로 분리된 것을 특징으로 하는 반도체 장치.
- 제4항에 있어서, 상기 반도체 장치는 논리회로를 포함한 것을 특징으로 하는 반도체 장치.※ 참고사항 : 최초출원 내용에 의하여 공개되는 것임.
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13962390 | 1990-05-31 | ||
JP13962490 | 1990-05-31 | ||
JP2-139624 | 1990-05-31 | ||
JP2-139623 | 1990-05-31 | ||
JP2-169947 | 1990-06-29 | ||
JP16994790 | 1990-06-29 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR910020872A true KR910020872A (ko) | 1991-12-20 |
KR950007421B1 KR950007421B1 (ko) | 1995-07-10 |
Family
ID=27317906
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019910009064A KR950007421B1 (ko) | 1990-05-31 | 1991-05-31 | 소자분리구조 및 배선구조의 개량된 반도체 장치 |
Country Status (7)
Country | Link |
---|---|
US (2) | US5200639A (ko) |
EP (1) | EP0460861B1 (ko) |
KR (1) | KR950007421B1 (ko) |
AT (1) | ATE205963T1 (ko) |
DE (1) | DE69132730T2 (ko) |
MY (1) | MY108878A (ko) |
SG (1) | SG46606A1 (ko) |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3305415B2 (ja) * | 1992-06-18 | 2002-07-22 | キヤノン株式会社 | 半導体装置、インクジェットヘッド、および画像形成装置 |
US5534069A (en) * | 1992-07-23 | 1996-07-09 | Canon Kabushiki Kaisha | Method of treating active material |
US5580808A (en) * | 1992-07-30 | 1996-12-03 | Canon Kabushiki Kaisha | Method of manufacturing a ROM device having contact holes treated with hydrogen atoms and energy beam |
US5652180A (en) * | 1993-06-28 | 1997-07-29 | Kawasaki Steel Corporation | Method of manufacturing semiconductor device with contact structure |
US6046079A (en) * | 1993-08-18 | 2000-04-04 | United Microelectronics Corporation | Method for prevention of latch-up of CMOS devices |
KR0175000B1 (ko) * | 1994-12-14 | 1999-02-01 | 윤종용 | 전자파 억제구조를 갖는 반도체 소자 |
US6001729A (en) * | 1995-01-10 | 1999-12-14 | Kawasaki Steel Corporation | Method of forming wiring structure for semiconductor device |
JPH08191054A (ja) * | 1995-01-10 | 1996-07-23 | Kawasaki Steel Corp | 半導体装置及びその製造方法 |
JPH08255907A (ja) * | 1995-01-18 | 1996-10-01 | Canon Inc | 絶縁ゲート型トランジスタ及びその製造方法 |
KR0183729B1 (ko) * | 1995-08-18 | 1999-04-15 | 김광호 | 극 박막의 금속층 형성방법 및 이를 이용한 배선 형성방법 |
JP3381767B2 (ja) * | 1997-09-22 | 2003-03-04 | 東京エレクトロン株式会社 | 成膜方法および半導体装置の製造方法 |
JP3472742B2 (ja) * | 2000-03-31 | 2003-12-02 | Necエレクトロニクス株式会社 | 半導体記憶装置 |
US6653617B2 (en) | 2000-07-03 | 2003-11-25 | Canon Kabushiki Kaisha | Photoelectric conversion device |
US20020155261A1 (en) * | 2001-04-24 | 2002-10-24 | Sung-Hsiung Wang | Method for forming interconnect structure with low dielectric constant |
AU2002352783A1 (en) * | 2001-11-20 | 2003-06-10 | The Regents Of The University Of California | Methods of fabricating highly conductive regions in semiconductor substrates for radio frequency applications |
TW578321B (en) * | 2002-10-02 | 2004-03-01 | Topro Technology Inc | Complementary metal-oxide semiconductor structure for a battery protection circuit and battery protection circuit therewith |
US6815714B1 (en) | 2003-02-20 | 2004-11-09 | National Semiconductor Corporation | Conductive structure in a semiconductor material |
US6812486B1 (en) * | 2003-02-20 | 2004-11-02 | National Semiconductor Corporation | Conductive structure and method of forming the structure |
DE10346312B4 (de) * | 2003-10-06 | 2015-04-09 | Infineon Technologies Ag | Halbleiterbauteil mit mehreren parallel bzw. seriell miteinander verschalteten Funktionselementen |
CN1294647C (zh) * | 2003-11-25 | 2007-01-10 | 上海华虹Nec电子有限公司 | 一种降低rfcmos器件噪声的方法 |
US7002231B2 (en) * | 2004-02-02 | 2006-02-21 | Micron Technology, Inc. | Barrier regions for image sensors |
US7902624B2 (en) * | 2004-02-02 | 2011-03-08 | Aptina Imaging Corporation | Barrier regions for image sensors |
US7920185B2 (en) * | 2004-06-30 | 2011-04-05 | Micron Technology, Inc. | Shielding black reference pixels in image sensors |
EP1724822A3 (en) * | 2005-05-17 | 2007-01-24 | Sumco Corporation | Semiconductor substrate and manufacturing method thereof |
JP4241856B2 (ja) * | 2006-06-29 | 2009-03-18 | 三洋電機株式会社 | 半導体装置および半導体装置の製造方法 |
US7791170B2 (en) * | 2006-07-10 | 2010-09-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of making a deep junction for electrical crosstalk reduction of an image sensor |
US7989282B2 (en) | 2009-03-26 | 2011-08-02 | International Business Machines Corporation | Structure and method for latchup improvement using through wafer via latchup guard ring |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4044452A (en) * | 1976-10-06 | 1977-08-30 | International Business Machines Corporation | Process for making field effect and bipolar transistors on the same semiconductor chip |
JPS5779647A (en) * | 1980-11-05 | 1982-05-18 | Ricoh Co Ltd | Master slice chip |
JPS5851537A (ja) * | 1981-09-24 | 1983-03-26 | Ricoh Co Ltd | マスタスライスチツプ |
US4472728A (en) * | 1982-02-19 | 1984-09-18 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Imaging X-ray spectrometer |
JPS594121A (ja) * | 1982-06-30 | 1984-01-10 | Mitsubishi Electric Corp | 半導体装置 |
JPS59165455A (ja) * | 1983-03-10 | 1984-09-18 | Toshiba Corp | 半導体装置 |
JPS60148147A (ja) * | 1984-01-13 | 1985-08-05 | Nec Corp | 半導体装置 |
JPS63116445A (ja) * | 1986-11-04 | 1988-05-20 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
JPS63156373A (ja) * | 1986-12-19 | 1988-06-29 | Matsushita Electric Works Ltd | フオトダイオ−ドアレイの製法 |
US4819052A (en) * | 1986-12-22 | 1989-04-04 | Texas Instruments Incorporated | Merged bipolar/CMOS technology using electrically active trench |
JPS63217644A (ja) * | 1987-03-06 | 1988-09-09 | Fuji Electric Co Ltd | 半導体装置 |
US4977439A (en) * | 1987-04-03 | 1990-12-11 | Esquivel Agerico L | Buried multilevel interconnect system |
JPS6422045A (en) * | 1987-07-17 | 1989-01-25 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor device |
JPS6437051A (en) * | 1987-07-31 | 1989-02-07 | Nec Corp | Manufacture of semiconductor device |
US5051792A (en) * | 1987-10-20 | 1991-09-24 | Bell Communications Research, Inc. | Epitaxial intermetallic contact for compound for compound semiconductors |
US4924019A (en) * | 1987-12-21 | 1990-05-08 | Cvd Incorporated | Synthesis of high purity dimethylaluminum hydride |
JPH02185026A (ja) * | 1989-01-11 | 1990-07-19 | Nec Corp | Al薄膜の選択的形成方法 |
PT95232B (pt) * | 1989-09-09 | 1998-06-30 | Canon Kk | Processo de producao de uma pelicula de aluminio depositada |
JP2721023B2 (ja) * | 1989-09-26 | 1998-03-04 | キヤノン株式会社 | 堆積膜形成法 |
EP0448223B1 (en) * | 1990-02-19 | 1996-06-26 | Canon Kabushiki Kaisha | Process for forming metal deposited film containing aluminium as main component by use of alkyl aluminum hydride |
JPH04346231A (ja) * | 1991-05-23 | 1992-12-02 | Canon Inc | 半導体装置の製造方法 |
US5447568A (en) * | 1991-12-26 | 1995-09-05 | Canon Kabushiki Kaisha | Chemical vapor deposition method and apparatus making use of liquid starting material |
-
1991
- 1991-05-29 EP EP91304866A patent/EP0460861B1/en not_active Expired - Lifetime
- 1991-05-29 US US07/707,022 patent/US5200639A/en not_active Expired - Fee Related
- 1991-05-29 SG SG1996006690A patent/SG46606A1/en unknown
- 1991-05-29 DE DE69132730T patent/DE69132730T2/de not_active Expired - Fee Related
- 1991-05-29 AT AT91304866T patent/ATE205963T1/de not_active IP Right Cessation
- 1991-05-31 KR KR1019910009064A patent/KR950007421B1/ko not_active IP Right Cessation
- 1991-05-31 MY MYPI91000953A patent/MY108878A/en unknown
-
1994
- 1994-11-16 US US08/341,965 patent/US5665630A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0460861A2 (en) | 1991-12-11 |
DE69132730T2 (de) | 2002-07-04 |
ATE205963T1 (de) | 2001-10-15 |
DE69132730D1 (de) | 2001-10-25 |
SG46606A1 (en) | 1998-02-20 |
MY108878A (en) | 1996-11-30 |
US5200639A (en) | 1993-04-06 |
KR950007421B1 (ko) | 1995-07-10 |
EP0460861A3 (en) | 1992-09-02 |
EP0460861B1 (en) | 2001-09-19 |
US5665630A (en) | 1997-09-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR910020872A (ko) | 소자분리구조 및 배선구조의 개량된 반도체 장치 | |
KR920007199A (ko) | 반도체기억장치 | |
KR880004580A (ko) | 전력 mosfet와 제어회로가 통합된 반도체소자 | |
FR2434485A1 (fr) | Configuration de contact enfoui pour circuits integres cmos/sos | |
KR900017449A (ko) | 전자 어셈블리 및 전자 어셈블리를 형성하는 공정 | |
KR920005304A (ko) | 반도체집적회로장치의 배선접속구조 및 그 제조방법 | |
KR920015558A (ko) | 반도체 집적회로 장치 | |
KR850008052A (ko) | 반도체 장치 | |
KR910019235A (ko) | 반도체기억장치 | |
KR970023863A (ko) | 반도체장치 및 그 제조방법 | |
KR920015577A (ko) | 반도체장치 | |
KR890016679A (ko) | 반도체장치 | |
KR840002162A (ko) | 반도체 장치(半導體裝置) | |
KR920020618A (ko) | 반도체 장치의 배선 접속 구조 및 그 제조방법 | |
KR900013654A (ko) | 반도체 장치 | |
KR910008861A (ko) | 집적회로소자 | |
KR890016626A (ko) | 반도체장치 | |
KR890008949A (ko) | 반도체장치 및 그 제조방법 | |
KR910019137A (ko) | 다결정 실리콘 접촉 구조 | |
KR840008213A (ko) | 반도체 장치 | |
KR910017656A (ko) | 반도체장치 | |
KR850000805A (ko) | 받도체장치 | |
KR850002683A (ko) | 반도체 장치 | |
KR900001025A (ko) | 반도체장치 | |
KR920007093A (ko) | 하이브리드형 반도체장치 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
G160 | Decision to publish patent application | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20040624 Year of fee payment: 10 |
|
LAPS | Lapse due to unpaid annual fee |