KR20230079226A - 플라즈마 프로세싱 시스템들을 위한 이동 가능한 (moveable) 에지 링들 - Google Patents

플라즈마 프로세싱 시스템들을 위한 이동 가능한 (moveable) 에지 링들 Download PDF

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Publication number
KR20230079226A
KR20230079226A KR1020237015468A KR20237015468A KR20230079226A KR 20230079226 A KR20230079226 A KR 20230079226A KR 1020237015468 A KR1020237015468 A KR 1020237015468A KR 20237015468 A KR20237015468 A KR 20237015468A KR 20230079226 A KR20230079226 A KR 20230079226A
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South Korea
Prior art keywords
ring
movable
edge
movable support
shield
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Pending
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KR1020237015468A
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English (en)
Korean (ko)
Inventor
크리스토퍼 킴벌
다렐 에를리히
유마 오쿠라
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램 리써치 코포레이션
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Publication of KR20230079226A publication Critical patent/KR20230079226A/ko
Pending legal-status Critical Current

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    • H01L21/68735—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32651—Shields, e.g. dark space shields, Faraday shields
    • H01L21/68742—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7611—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7612—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by lifting arrangements, e.g. lift pins

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
KR1020237015468A 2020-10-05 2021-09-29 플라즈마 프로세싱 시스템들을 위한 이동 가능한 (moveable) 에지 링들 Pending KR20230079226A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202063087814P 2020-10-05 2020-10-05
US63/087,814 2020-10-05
PCT/US2021/052732 WO2022076227A1 (en) 2020-10-05 2021-09-29 Moveable edge rings for plasma processing systems

Publications (1)

Publication Number Publication Date
KR20230079226A true KR20230079226A (ko) 2023-06-05

Family

ID=81126208

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020237015468A Pending KR20230079226A (ko) 2020-10-05 2021-09-29 플라즈마 프로세싱 시스템들을 위한 이동 가능한 (moveable) 에지 링들

Country Status (7)

Country Link
US (1) US12562350B2 (https=)
EP (1) EP4226415A4 (https=)
JP (2) JP7752172B2 (https=)
KR (1) KR20230079226A (https=)
CN (1) CN116349002A (https=)
TW (1) TWI899341B (https=)
WO (1) WO2022076227A1 (https=)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10658222B2 (en) 2015-01-16 2020-05-19 Lam Research Corporation Moveable edge coupling ring for edge process control during semiconductor wafer processing
WO2019103722A1 (en) 2017-11-21 2019-05-31 Lam Research Corporation Bottom and middle edge rings
CN118398464A (zh) 2018-08-13 2024-07-26 朗姆研究公司 可更换和/或可折叠的用于等离子鞘调整的并入边缘环定位和定心功能的边缘环组件
CN115315775A (zh) 2020-03-23 2022-11-08 朗姆研究公司 衬底处理系统中的中环腐蚀补偿
CN116349002A (zh) 2020-10-05 2023-06-27 朗姆研究公司 用于等离子体处理系统的可移动边缘环
CN115440558A (zh) * 2021-06-03 2022-12-06 长鑫存储技术有限公司 半导体蚀刻设备
EP4526921A1 (en) * 2022-05-17 2025-03-26 Lam Research Corporation Self-centering edge ring
US20240030006A1 (en) * 2022-07-25 2024-01-25 Micron Technology, Inc. Erosion rate monitoring for wafer fabrication equipment
TW202433543A (zh) * 2022-11-03 2024-08-16 美商蘭姆研究公司 增加關聯於邊緣環之熱傳接觸面積的系統及方法
TWI885666B (zh) * 2023-12-27 2025-06-01 南韓商維人股份有限公司 淺蝕刻處理腔室
KR20250112005A (ko) * 2024-01-16 2025-07-23 삼성전자주식회사 포커스 링, 이를 포함하는 기판 처리 장치 및 이를 이용한 기판 처리 방법
US12562351B2 (en) * 2024-01-30 2026-02-24 Applied Materials, Inc. Extreme edge sheath tunability with non-movable edge ring
WO2025174512A1 (en) * 2024-02-13 2025-08-21 Lam Research Corporation Edge ring with conductive contact interface
US12614701B2 (en) 2024-05-15 2026-04-28 Applied Materials, Inc. Substrate processing chamber with plasma confinement

Family Cites Families (389)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0293063A (ja) 1988-09-30 1990-04-03 Mitsubishi Heavy Ind Ltd 真空蒸発装置用るつぼ
EP0424299A3 (en) 1989-10-20 1991-08-28 International Business Machines Corporation Selective silicon nitride plasma etching
US5304248A (en) 1990-12-05 1994-04-19 Applied Materials, Inc. Passive shield for CVD wafer processing which provides frontside edge exclusion and prevents backside depositions
US6024826A (en) 1996-05-13 2000-02-15 Applied Materials, Inc. Plasma reactor with heated source of a polymer-hardening precursor material
JP3173693B2 (ja) 1993-10-04 2001-06-04 東京エレクトロン株式会社 プラズマ処理装置及びその方法
US5529657A (en) 1993-10-04 1996-06-25 Tokyo Electron Limited Plasma processing apparatus
TW254030B (en) 1994-03-18 1995-08-11 Anelva Corp Mechanic escape mechanism for substrate
TW283250B (en) 1995-07-10 1996-08-11 Watkins Johnson Co Plasma enhanced chemical processing reactor and method
US5846332A (en) * 1996-07-12 1998-12-08 Applied Materials, Inc. Thermally floating pedestal collar in a chemical vapor deposition chamber
US5837058A (en) 1996-07-12 1998-11-17 Applied Materials, Inc. High temperature susceptor
US5879128A (en) 1996-07-24 1999-03-09 Applied Materials, Inc. Lift pin and support pin apparatus for a processing chamber
US5848889A (en) 1996-07-24 1998-12-15 Applied Materials Inc. Semiconductor wafer support with graded thermal mass
JP3247079B2 (ja) 1997-02-06 2002-01-15 松下電器産業株式会社 エッチング方法及びエッチング装置
US5942039A (en) 1997-05-01 1999-08-24 Applied Materials, Inc. Self-cleaning focus ring
DE19718501A1 (de) 1997-05-02 1998-11-05 Fhp Motors Gmbh Haltevorrichtung für eine Statorwicklung eines Elektromotors
JP2001522142A (ja) 1997-11-03 2001-11-13 エーエスエム アメリカ インコーポレイテッド 改良された低質量ウェハ支持システム
US6106625A (en) 1997-12-02 2000-08-22 Applied Materials, Inc. Reactor useful for chemical vapor deposition of titanium nitride
US6511543B1 (en) 1997-12-23 2003-01-28 Unaxis Balzers Aktiengesellschaft Holding device
JP2000036488A (ja) 1998-07-21 2000-02-02 Speedfam-Ipec Co Ltd ウエハ平坦化方法及びそのシステム
JP3076791B2 (ja) 1998-10-19 2000-08-14 アプライド マテリアルズ インコーポレイテッド 半導体製造装置
WO2000026939A1 (en) 1998-10-29 2000-05-11 Applied Materials, Inc. Apparatus for coupling power through a workpiece in a semiconductor wafer processing system
US6579805B1 (en) 1999-01-05 2003-06-17 Ronal Systems Corp. In situ chemical generator and method
US6508911B1 (en) 1999-08-16 2003-01-21 Applied Materials Inc. Diamond coated parts in a plasma reactor
JP4592849B2 (ja) 1999-10-29 2010-12-08 アプライド マテリアルズ インコーポレイテッド 半導体製造装置
US6589352B1 (en) 1999-12-10 2003-07-08 Applied Materials, Inc. Self aligning non contact shadow ring process kit
JP2003518766A (ja) 1999-12-23 2003-06-10 アプライド マテリアルズ インコーポレイテッド オープン領域の多いシリコン構造を異方性エッチングするためのフッ素ベースプラズマエッチング方法
JP2001230239A (ja) 2000-02-15 2001-08-24 Tokyo Electron Ltd 処理装置及び処理方法
JP4422295B2 (ja) 2000-05-17 2010-02-24 キヤノンアネルバ株式会社 Ｃｖｄ装置
KR100609533B1 (ko) 2000-06-30 2006-08-04 주식회사 하이닉스반도체 반도체소자의 캐패시터 형성방법
TW506234B (en) 2000-09-18 2002-10-11 Tokyo Electron Ltd Tunable focus ring for plasma processing
JP4526683B2 (ja) 2000-10-31 2010-08-18 株式会社山形信越石英 石英ガラス製ウェーハ支持治具及びその製造方法
JP3388228B2 (ja) 2000-12-07 2003-03-17 株式会社半導体先端テクノロジーズ プラズマエッチング装置、及びプラズマエッチング方法
US6537429B2 (en) 2000-12-29 2003-03-25 Lam Research Corporation Diamond coatings on reactor wall and method of manufacturing thereof
JP4433614B2 (ja) 2001-01-17 2010-03-17 ソニー株式会社 エッチング装置
JP4477784B2 (ja) 2001-02-02 2010-06-09 東京エレクトロン株式会社 被処理体の載置機構
KR20020071398A (ko) 2001-03-06 2002-09-12 삼성전자 주식회사 반도체 장치의 제조에서 건식 식각 장치
KR20040019293A (ko) 2001-05-24 2004-03-05 셀레리티 그룹 아이엔씨 소정 비율의 프로세스 유체를 제공하는 방법 및 장치
US20020189947A1 (en) 2001-06-13 2002-12-19 Eksigent Technologies Llp Electroosmotic flow controller
AU2002366921A1 (en) 2001-12-13 2003-07-09 Tokyo Electron Limited Ring mechanism, and plasma processing device using the ring mechanism
KR20030065126A (ko) 2002-01-31 2003-08-06 (주) 엠큐브테크놀로지 자기장을 이용한 기기의 자극코일 냉각시스템
US20040040664A1 (en) 2002-06-03 2004-03-04 Yang Jang Gyoo Cathode pedestal for a plasma etch reactor
JP3856730B2 (ja) 2002-06-03 2006-12-13 東京エレクトロン株式会社 流量制御装置を備えたガス供給設備からのチャンバーへのガス分流供給方法。
US7903742B2 (en) 2002-07-15 2011-03-08 Thomson Licensing Adaptive weighting of reference pictures in video decoding
US6896765B2 (en) 2002-09-18 2005-05-24 Lam Research Corporation Method and apparatus for the compensation of edge ring wear in a plasma processing chamber
JP4502590B2 (ja) 2002-11-15 2010-07-14 株式会社ルネサステクノロジ 半導体製造装置
US7311784B2 (en) 2002-11-26 2007-12-25 Tokyo Electron Limited Plasma processing device
KR20040050080A (ko) 2002-12-09 2004-06-16 주식회사 하이닉스반도체 플라즈마 식각 챔버용 포커스 링 구동 장치
US7169231B2 (en) 2002-12-13 2007-01-30 Lam Research Corporation Gas distribution system with tuning gas
US20040112540A1 (en) 2002-12-13 2004-06-17 Lam Research Corporation Uniform etch system
US6997202B2 (en) 2002-12-17 2006-02-14 Advanced Technology Materials, Inc. Gas storage and dispensing system for variable conductance dispensing of gas at constant flow rate
US20040163601A1 (en) 2003-02-26 2004-08-26 Masanori Kadotani Plasma processing apparatus
US20040168719A1 (en) 2003-02-28 2004-09-02 Masahiro Nambu System for dividing gas flow
JP4286025B2 (ja) 2003-03-03 2009-06-24 川崎マイクロエレクトロニクス株式会社 石英治具の再生方法、再生使用方法および半導体装置の製造方法
US6907904B2 (en) 2003-03-03 2005-06-21 Redwood Microsystems, Inc. Fluid delivery system and mounting panel therefor
JP2004296553A (ja) 2003-03-25 2004-10-21 Ngk Insulators Ltd 半導体製造装置用部材
JP4394073B2 (ja) 2003-05-02 2010-01-06 東京エレクトロン株式会社 処理ガス導入機構およびプラズマ処理装置
CN101106070B (zh) 2003-05-02 2012-01-11 东京毅力科创株式会社 处理气体导入机构和等离子体处理装置
TW200507141A (en) 2003-05-12 2005-02-16 Agere Systems Inc Method of mass flow control flow verification and calibration
WO2004109420A1 (ja) 2003-06-09 2004-12-16 Ckd Corporation 相対的圧力制御システム及び相対的流量制御システム
JP4195837B2 (ja) 2003-06-20 2008-12-17 東京エレクトロン株式会社 ガス分流供給装置及びガス分流供給方法
US6955072B2 (en) 2003-06-25 2005-10-18 Mks Instruments, Inc. System and method for in-situ flow verification and calibration
US7064812B2 (en) 2003-08-19 2006-06-20 Tokyo Electron Limited Method of using a sensor gas to determine erosion level of consumable system components
KR100578129B1 (ko) 2003-09-19 2006-05-10 삼성전자주식회사 플라즈마 식각 장치
US7137400B2 (en) 2003-09-30 2006-11-21 Agere Systems Inc. Bypass loop gas flow calibration
JP4399227B2 (ja) 2003-10-06 2010-01-13 株式会社フジキン チャンバの内圧制御装置及び内圧被制御式チャンバ
US6869348B1 (en) 2003-10-07 2005-03-22 Strasbaugh Retaining ring for wafer carriers
US7128806B2 (en) 2003-10-21 2006-10-31 Applied Materials, Inc. Mask etch processing apparatus
KR20050038898A (ko) 2003-10-23 2005-04-29 삼성전자주식회사 반도체 기판의 건식 식각 장치
US7244336B2 (en) 2003-12-17 2007-07-17 Lam Research Corporation Temperature controlled hot edge ring assembly for reducing plasma reactor etch rate drift
US20050155625A1 (en) 2004-01-20 2005-07-21 Taiwan Semiconductor Manufacturing Co., Ltd. Chamber cleaning method
US7095179B2 (en) 2004-02-22 2006-08-22 Zond, Inc. Methods and apparatus for generating strongly-ionized plasmas with ionizational instabilities
US7247348B2 (en) 2004-02-25 2007-07-24 Honeywell International, Inc. Method for manufacturing a erosion preventative diamond-like coating for a turbine engine compressor blade
US7072743B2 (en) 2004-03-09 2006-07-04 Mks Instruments, Inc. Semiconductor manufacturing gas flow divider system and method
JP2005288853A (ja) 2004-03-31 2005-10-20 Brother Ind Ltd インクジェットヘッドの製造方法及びインクジェットヘッド
US20070066038A1 (en) 2004-04-30 2007-03-22 Lam Research Corporation Fast gas switching plasma processing apparatus
US7708859B2 (en) 2004-04-30 2010-05-04 Lam Research Corporation Gas distribution system having fast gas switching capabilities
US7412986B2 (en) 2004-07-09 2008-08-19 Celerity, Inc. Method and system for flow measurement and validation of a mass flow controller
US20060124169A1 (en) 2004-12-09 2006-06-15 Tokyo Electron Limited Gas supply unit, substrate processing apparatus, and supply gas setting method
JP2006173223A (ja) 2004-12-14 2006-06-29 Toshiba Corp プラズマエッチング装置およびそれを用いたプラズマエッチング方法
JP4006004B2 (ja) 2004-12-28 2007-11-14 株式会社東芝 半導体製造装置及び半導体装置の製造方法
WO2006073908A2 (en) 2004-12-30 2006-07-13 E.I. Dupont De Nemours And Company Electronic device having a mirror stack
JP4707421B2 (ja) 2005-03-14 2011-06-22 東京エレクトロン株式会社 処理装置，処理装置の消耗部品管理方法，処理システム，処理システムの消耗部品管理方法
US7376520B2 (en) 2005-03-16 2008-05-20 Lam Research Corporation System and method for gas flow verification
US7621290B2 (en) 2005-04-21 2009-11-24 Mks Instruments, Inc. Gas delivery method and system including a flow ratio controller using antisymmetric optimal control
JP2006344701A (ja) 2005-06-08 2006-12-21 Matsushita Electric Ind Co Ltd エッチング装置およびエッチング方法
KR100621778B1 (ko) 2005-06-17 2006-09-11 삼성전자주식회사 플라즈마 처리 장치
US20070021935A1 (en) 2005-07-12 2007-01-25 Larson Dean J Methods for verifying gas flow rates from a gas supply system into a plasma processing chamber
US7431788B2 (en) 2005-07-19 2008-10-07 Lam Research Corporation Method of protecting a bond layer in a substrate support adapted for use in a plasma processing system
US7322629B2 (en) 2005-07-26 2008-01-29 Intier Automotive Inc. Locking hinge for a door structure
JP4804824B2 (ja) 2005-07-27 2011-11-02 株式会社日立ハイテクノロジーズ プラズマ処理装置
US7291560B2 (en) 2005-08-01 2007-11-06 Infineon Technologies Ag Method of production pitch fractionizations in semiconductor technology
US20070032081A1 (en) 2005-08-08 2007-02-08 Jeremy Chang Edge ring assembly with dielectric spacer ring
US8088248B2 (en) 2006-01-11 2012-01-03 Lam Research Corporation Gas switching section including valves having different flow coefficients for gas distribution system
JP4895167B2 (ja) 2006-01-31 2012-03-14 東京エレクトロン株式会社 ガス供給装置，基板処理装置，ガス供給方法
US20070187363A1 (en) 2006-02-13 2007-08-16 Tokyo Electron Limited Substrate processing apparatus and substrate processing method
JP4909609B2 (ja) 2006-03-01 2012-04-04 株式会社東芝 加工形状シミュレーション方法、半導体装置の製造方法及び加工形状シミュレーションシステム
US20070204914A1 (en) 2006-03-01 2007-09-06 Asahi Organic Chemicals Industry Co., Ltd. Fluid mixing system
US7578258B2 (en) 2006-03-03 2009-08-25 Lam Research Corporation Methods and apparatus for selective pre-coating of a plasma processing chamber
DE112007000527B4 (de) 2006-03-06 2016-09-08 Diamond Innovations, Inc. Prothese für Gelenkersatz
JP4788920B2 (ja) 2006-03-20 2011-10-05 日立金属株式会社 質量流量制御装置、その検定方法及び半導体製造装置
US7674337B2 (en) 2006-04-07 2010-03-09 Applied Materials, Inc. Gas manifolds for use during epitaxial film formation
US8997791B2 (en) 2006-04-14 2015-04-07 Mks Instruments, Inc. Multiple-channel flow ratio controller
US8475625B2 (en) 2006-05-03 2013-07-02 Applied Materials, Inc. Apparatus for etching high aspect ratio features
US8440049B2 (en) 2006-05-03 2013-05-14 Applied Materials, Inc. Apparatus for etching high aspect ratio features
US20070283884A1 (en) 2006-05-30 2007-12-13 Applied Materials, Inc. Ring assembly for substrate processing chamber
JP2007332022A (ja) 2006-06-13 2007-12-27 Young Sang Cho 多結晶シリコンインゴット製造装置
US7777152B2 (en) 2006-06-13 2010-08-17 Applied Materials, Inc. High AC current high RF power AC-RF decoupling filter for plasma reactor heated electrostatic chuck
JP4814706B2 (ja) 2006-06-27 2011-11-16 株式会社フジキン 流量比可変型流体供給装置
JP4806598B2 (ja) 2006-07-18 2011-11-02 株式会社日立ハイテクノロジーズ 真空処理装置
KR101352365B1 (ko) 2006-08-09 2014-01-16 엘아이지에이디피 주식회사 플라즈마 처리장치
CN101506561B (zh) 2006-08-23 2012-04-18 株式会社堀场Stec 组合式气体分配盘装置
KR20080023569A (ko) 2006-09-11 2008-03-14 주식회사 하이닉스반도체 식각프로파일 변형을 방지하는 플라즈마식각장치
KR100803858B1 (ko) * 2006-09-21 2008-02-14 현대자동차주식회사 헬리컬기어 가공용 고정장치
US7875824B2 (en) 2006-10-16 2011-01-25 Lam Research Corporation Quartz guard ring centering features
EP2104755A4 (en) 2006-10-26 2011-01-12 Symyx Solutions Inc HIGH PRESSURE PARALLEL FIXED BIN REACTOR AND METHOD THEREFOR
US7964818B2 (en) 2006-10-30 2011-06-21 Applied Materials, Inc. Method and apparatus for photomask etching
US9405298B2 (en) 2006-11-20 2016-08-02 Applied Materials, Inc. System and method to divide fluid flow in a predetermined ratio
US20080121177A1 (en) 2006-11-28 2008-05-29 Applied Materials, Inc. Dual top gas feed through distributor for high density plasma chamber
US7758698B2 (en) 2006-11-28 2010-07-20 Applied Materials, Inc. Dual top gas feed through distributor for high density plasma chamber
CN101563663B (zh) 2006-12-05 2011-09-21 株式会社堀场Stec 流量控制装置的检定方法
US8019481B2 (en) 2006-12-12 2011-09-13 Horiba Stec, Co., Ltd. Flow rate ratio control device
SE530902C2 (sv) 2006-12-19 2008-10-14 Alfa Laval Corp Ab Sektionerad flödesanordning och förfarande för att reglera temperaturen i denna
JP4792381B2 (ja) 2006-12-25 2011-10-12 東京エレクトロン株式会社 基板処理装置、フォーカスリングの加熱方法及び基板処理方法
KR100783062B1 (ko) 2006-12-27 2007-12-07 세메스 주식회사 기판 지지 장치, 플라즈마 식각 장치 및 플라즈마 식각방법
KR100849179B1 (ko) 2007-01-10 2008-07-30 삼성전자주식회사 갭 발생방지구조 및 이를 갖는 플라즈마 처리설비
TW200832901A (en) 2007-01-18 2008-08-01 Asustek Comp Inc Filter circuit for reducing EMI of differential signal
US7846497B2 (en) 2007-02-26 2010-12-07 Applied Materials, Inc. Method and apparatus for controlling gas flow to a processing chamber
US7775236B2 (en) 2007-02-26 2010-08-17 Applied Materials, Inc. Method and apparatus for controlling gas flow to a processing chamber
US8074677B2 (en) 2007-02-26 2011-12-13 Applied Materials, Inc. Method and apparatus for controlling gas flow to a processing chamber
US7988813B2 (en) 2007-03-12 2011-08-02 Tokyo Electron Limited Dynamic control of process chemistry for improved within-substrate process uniformity
JP5317424B2 (ja) 2007-03-28 2013-10-16 東京エレクトロン株式会社 プラズマ処理装置
JP2008251681A (ja) 2007-03-29 2008-10-16 Hitachi High-Technologies Corp ウエハステージ
US7718559B2 (en) 2007-04-20 2010-05-18 Applied Materials, Inc. Erosion resistance enhanced quartz used in plasma etch chamber
US8062487B2 (en) 2007-06-25 2011-11-22 United Microelectronics Corp. Wafer supporting device of a sputtering apparatus
US8563619B2 (en) 2007-06-28 2013-10-22 Lam Research Corporation Methods and arrangements for plasma processing system with tunable capacitance
WO2009014963A1 (en) 2007-07-20 2009-01-29 Bp Corporation North America Inc. Methods and apparatuses for manufacturing cast silicon from seed crystals
US8202393B2 (en) 2007-08-29 2012-06-19 Lam Research Corporation Alternate gas delivery and evacuation system for plasma processing apparatuses
JP2009060011A (ja) 2007-09-03 2009-03-19 Tokyo Electron Ltd 基板載置台、基板処理装置、及び温度制御方法
US8440259B2 (en) 2007-09-05 2013-05-14 Intermolecular, Inc. Vapor based combinatorial processing
US7832354B2 (en) 2007-09-05 2010-11-16 Applied Materials, Inc. Cathode liner with wafer edge gas injection in a plasma reactor chamber
US7824146B2 (en) 2007-09-07 2010-11-02 Advanced Technology Development Facility Automated systems and methods for adapting semiconductor fabrication tools to process wafers of different diameters
JP4858395B2 (ja) 2007-10-12 2012-01-18 パナソニック株式会社 プラズマ処理装置
JP5459895B2 (ja) 2007-10-15 2014-04-02 Ｃｋｄ株式会社 ガス分流供給ユニット
US20100264117A1 (en) 2007-10-31 2010-10-21 Tohoku University Plasma processing system and plasma processing method
JP2009123795A (ja) 2007-11-13 2009-06-04 Hitachi Kokusai Electric Inc 半導体装置の製造方法及び基板処理装置
US8191397B2 (en) 2007-12-12 2012-06-05 Air Liquide Electronics U.S. Lp Methods for checking and calibrating concentration sensors in a semiconductor processing chamber
US8999106B2 (en) 2007-12-19 2015-04-07 Applied Materials, Inc. Apparatus and method for controlling edge performance in an inductively coupled plasma chamber
US8037894B1 (en) 2007-12-27 2011-10-18 Intermolecular, Inc. Maintaining flow rate of a fluid
US20100269924A1 (en) 2007-12-27 2010-10-28 Horiba Stec, Co., Ltd. Flow rate ratio controlling apparatus
KR101590655B1 (ko) 2007-12-27 2016-02-18 램 리써치 코포레이션 동적 정렬 빔 교정의 방법 및 시스템
EP2247819B1 (en) 2008-01-18 2022-11-02 Pivotal Systems Corporation Method and apparatus for in situ testing of gas flow controllers
JP2009188173A (ja) 2008-02-06 2009-08-20 Tokyo Electron Ltd 基板処理方法及び基板処理装置
US7754518B2 (en) 2008-02-15 2010-07-13 Applied Materials, Inc. Millisecond annealing (DSA) edge protection
JPWO2009107777A1 (ja) 2008-02-27 2011-07-07 株式会社東芝 動画像符号化／復号装置
US8969151B2 (en) 2008-02-29 2015-03-03 Globalfoundries Singapore Pte. Ltd. Integrated circuit system employing resistance altering techniques
US8110068B2 (en) 2008-03-20 2012-02-07 Novellus Systems, Inc. Gas flow distribution receptacles, plasma generator systems, and methods for performing plasma stripping processes
WO2009117565A2 (en) 2008-03-21 2009-09-24 Applied Materials, Inc. Method and apparatus of a substrate etching system and process
CN101552182B (zh) 2008-03-31 2010-11-03 北京北方微电子基地设备工艺研究中心有限责任公司 一种用于半导体制造工艺中的边缘环机构
US9062379B2 (en) 2008-04-16 2015-06-23 Applied Materials, Inc. Wafer processing deposition shielding components
JP5916384B2 (ja) 2008-04-16 2016-05-11 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ ウェハ処理堆積物遮蔽構成材
US8185242B2 (en) 2008-05-07 2012-05-22 Lam Research Corporation Dynamic alignment of wafers using compensation values obtained through a series of wafer movements
RU2011101453A (ru) 2008-06-16 2012-07-27 ДжиТи СОЛАР ИНКОРПОРЕЙТЕД (US) Системы и способы выращивания монокристаллических кремниевых слитков путем направленного отверждения
JP2010034416A (ja) 2008-07-30 2010-02-12 Hitachi High-Technologies Corp プラズマ処理装置およびプラズマ処理方法
BRPI0917012A2 (pt) 2008-08-13 2016-02-16 Shell Int Research método e aparelho para controlar o fluxo de gás entre uma ou mais correntes de entrada e uma ou mais correntes de saída através de uma conjunção
US8287650B2 (en) 2008-09-10 2012-10-16 Applied Materials, Inc. Low sloped edge ring for plasma processing chamber
US8089046B2 (en) 2008-09-19 2012-01-03 Applied Materials, Inc. Method and apparatus for calibrating mass flow controllers
WO2010062345A2 (en) 2008-10-31 2010-06-03 Lam Research Corporation Lower electrode assembly of plasma processing chamber
US20100122655A1 (en) 2008-11-14 2010-05-20 Tiner Robin L Ball supported shadow frame
CN102217054B (zh) 2008-11-25 2013-05-08 京瓷株式会社 晶片加热装置、静电卡盘以及晶片加热装置的制造方法
US8809196B2 (en) 2009-01-14 2014-08-19 Tokyo Electron Limited Method of etching a thin film using pressure modulation
JP5216632B2 (ja) 2009-03-03 2013-06-19 東京エレクトロン株式会社 流体制御装置
WO2010109848A1 (ja) 2009-03-26 2010-09-30 パナソニック株式会社 プラズマ処理装置及びプラズマ処理方法
JP5071437B2 (ja) 2009-05-18 2012-11-14 パナソニック株式会社 プラズマ処理装置及びプラズマ処理装置におけるトレイの載置方法
JP2011047930A (ja) 2009-07-31 2011-03-10 Tdk Corp 磁気抵抗効果素子およびセンサ
JP5650935B2 (ja) 2009-08-07 2015-01-07 東京エレクトロン株式会社 基板処理装置及び位置決め方法並びにフォーカスリング配置方法
US8409995B2 (en) 2009-08-07 2013-04-02 Tokyo Electron Limited Substrate processing apparatus, positioning method and focus ring installation method
KR101386552B1 (ko) 2009-08-20 2014-04-17 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치 및 방법과 플라즈마 에칭 처리 장치 및 방법
WO2011026126A2 (en) 2009-08-31 2011-03-03 Lam Research Corporation A multi-peripheral ring arrangement for performing plasma confinement
KR20120098751A (ko) 2009-10-26 2012-09-05 솔베이 플루오르 게엠베하 Ｔｆｔ 매트릭스 제조를 위한 식각 공정
DE202010014805U1 (de) 2009-11-02 2011-02-17 Lam Research Corporation (Delaware Corporation) Heissrandring mit geneigter oberer Oberfläche
US8270141B2 (en) 2009-11-20 2012-09-18 Applied Materials, Inc. Electrostatic chuck with reduced arcing
DE202010015933U1 (de) 2009-12-01 2011-03-31 Lam Research Corp.(N.D.Ges.D.Staates Delaware), Fremont Eine Randringanordnung für Plasmaätzkammern
US20120244715A1 (en) 2009-12-02 2012-09-27 Xactix, Inc. High-selectivity etching system and method
US9127361B2 (en) 2009-12-07 2015-09-08 Mks Instruments, Inc. Methods of and apparatus for controlling pressure in multiple zones of a process tool
WO2011078242A1 (ja) 2009-12-25 2011-06-30 株式会社堀場エステック マスフローコントローラシステム
JP5466756B2 (ja) 2010-03-04 2014-04-09 東京エレクトロン株式会社 プラズマエッチング方法、半導体デバイスの製造方法、及びプラズマエッチング装置
JP2011210853A (ja) 2010-03-29 2011-10-20 Tokyo Electron Ltd 消耗量測定方法
US20110265883A1 (en) 2010-04-30 2011-11-03 Applied Materials, Inc. Methods and apparatus for reducing flow splitting errors using orifice ratio conductance control
US20110265951A1 (en) 2010-04-30 2011-11-03 Applied Materials, Inc. Twin chamber processing system
KR101120184B1 (ko) 2010-05-07 2012-02-27 주식회사 하이닉스반도체 반도체 소자의 패턴 형성 방법
JP5584517B2 (ja) 2010-05-12 2014-09-03 東京エレクトロン株式会社 プラズマ処理装置及び半導体装置の製造方法
US8485128B2 (en) 2010-06-30 2013-07-16 Lam Research Corporation Movable ground ring for a plasma processing chamber
KR20130093597A (ko) 2010-08-02 2013-08-22 바젤 폴리올레핀 게엠베하 유체 흐름들을 혼합하고 분할하는 방법 및 장치
US9793126B2 (en) 2010-08-04 2017-10-17 Lam Research Corporation Ion to neutral control for wafer processing with dual plasma source reactor
US8869742B2 (en) 2010-08-04 2014-10-28 Lam Research Corporation Plasma processing chamber with dual axial gas injection and exhaust
US8742666B2 (en) 2010-08-06 2014-06-03 Lam Research Corporation Radio frequency (RF) power filters and plasma processing systems including RF power filters
JP2012049376A (ja) 2010-08-27 2012-03-08 Hitachi High-Technologies Corp プラズマ処理装置およびプラズマ処理方法
JP5654297B2 (ja) 2010-09-14 2015-01-14 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP6080167B2 (ja) 2010-10-01 2017-02-15 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 薄膜トランジスタ用途に用いられる砒化ガリウムに基づく材料
US8633423B2 (en) 2010-10-14 2014-01-21 Applied Materials, Inc. Methods and apparatus for controlling substrate temperature in a process chamber
US8905074B2 (en) 2010-10-22 2014-12-09 Applied Materials, Inc. Apparatus for controlling gas distribution using orifice ratio conductance control
US9490166B2 (en) 2010-12-08 2016-11-08 Evatec Ag Apparatus and method for depositing a layer onto a substrate
US20120149213A1 (en) 2010-12-09 2012-06-14 Lakshminarayana Nittala Bottom up fill in high aspect ratio trenches
US9303319B2 (en) 2010-12-17 2016-04-05 Veeco Instruments Inc. Gas injection system for chemical vapor deposition using sequenced valves
DE102010054875B4 (de) 2010-12-17 2012-10-31 Eagleburgmann Germany Gmbh & Co. Kg Reibungsarmer Gleitring mit kostengünstiger Diamantbeschichtung
JP5855921B2 (ja) 2010-12-17 2016-02-09 株式会社堀場エステック ガス濃度調整装置
US9790594B2 (en) 2010-12-28 2017-10-17 Asm Ip Holding B.V. Combination CVD/ALD method, source and pulse profile modification
US8470127B2 (en) 2011-01-06 2013-06-25 Lam Research Corporation Cam-locked showerhead electrode and assembly
JP5690596B2 (ja) 2011-01-07 2015-03-25 東京エレクトロン株式会社 フォーカスリング及び該フォーカスリングを備える基板処理装置
JP5719599B2 (ja) 2011-01-07 2015-05-20 東京エレクトロン株式会社 基板処理装置
US8999856B2 (en) 2011-03-14 2015-04-07 Applied Materials, Inc. Methods for etch of sin films
US9064815B2 (en) 2011-03-14 2015-06-23 Applied Materials, Inc. Methods for etch of metal and metal-oxide films
JP2014508710A (ja) 2011-03-15 2014-04-10 ジーティーエイティー・コーポレーション 結晶成長装置のための自動化視覚システム
US9476144B2 (en) 2011-03-28 2016-10-25 Applied Materials, Inc. Method and apparatus for the selective deposition of epitaxial germanium stressor alloys
WO2012133585A1 (ja) 2011-03-29 2012-10-04 東京エレクトロン株式会社 プラズマエッチング装置及びプラズマエッチング方法
JP6003011B2 (ja) 2011-03-31 2016-10-05 東京エレクトロン株式会社 基板処理装置
JP2012222235A (ja) 2011-04-12 2012-11-12 Hitachi High-Technologies Corp プラズマ処理装置
US9059678B2 (en) 2011-04-28 2015-06-16 Lam Research Corporation TCCT match circuit for plasma etch chambers
US20120280429A1 (en) 2011-05-02 2012-11-08 Gt Solar, Inc. Apparatus and method for producing a multicrystalline material having large grain sizes
US8746284B2 (en) 2011-05-11 2014-06-10 Intermolecular, Inc. Apparatus and method for multiple symmetrical divisional gas distribution
CN105977126B (zh) 2011-05-31 2018-12-07 应用材料公司 用于等离子体蚀刻腔室的孔部件
KR101909439B1 (ko) 2011-06-06 2018-10-18 지티에이티 코포레이션 결정성장장치용 히이터 어셈블리
US10364496B2 (en) 2011-06-27 2019-07-30 Asm Ip Holding B.V. Dual section module having shared and unshared mass flow controllers
JP6068462B2 (ja) 2011-06-30 2017-01-25 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 高速ガス交換、高速ガス切換、及びプログラミング可能なガス送出のための方法及び装置
JP5377587B2 (ja) 2011-07-06 2013-12-25 東京エレクトロン株式会社 アンテナ、プラズマ処理装置及びプラズマ処理方法
JP5739261B2 (ja) 2011-07-28 2015-06-24 株式会社堀場エステック ガス供給システム
US8728239B2 (en) 2011-07-29 2014-05-20 Asm America, Inc. Methods and apparatus for a gas panel with constant gas flow
JP5948026B2 (ja) 2011-08-17 2016-07-06 東京エレクトロン株式会社 半導体製造装置及び処理方法
US20130045605A1 (en) 2011-08-18 2013-02-21 Applied Materials, Inc. Dry-etch for silicon-and-nitrogen-containing films
US8849466B2 (en) 2011-10-04 2014-09-30 Mks Instruments, Inc. Method of and apparatus for multiple channel flow ratio controller system
US20130104996A1 (en) 2011-10-26 2013-05-02 Applied Materials, Inc. Method for balancing gas flow supplying multiple cvd reactors
US8933628B2 (en) 2011-10-28 2015-01-13 Applied Materials, Inc. Inductively coupled plasma source with phase control
US8671733B2 (en) 2011-12-13 2014-03-18 Intermolecular, Inc. Calibration procedure considering gas solubility
US10825708B2 (en) 2011-12-15 2020-11-03 Applied Materials, Inc. Process kit components for use with an extended and independent RF powered cathode substrate for extreme edge tunability
US8900469B2 (en) 2011-12-19 2014-12-02 Applied Materials, Inc. Etch rate detection for anti-reflective coating layer and absorber layer etching
JP5973731B2 (ja) 2012-01-13 2016-08-23 東京エレクトロン株式会社 プラズマ処理装置及びヒータの温度制御方法
US20140311676A1 (en) 2012-01-17 2014-10-23 Tokyo Electron Limited Substrate mounting table and plasma treatment device
JP5905735B2 (ja) 2012-02-21 2016-04-20 東京エレクトロン株式会社 基板処理装置、基板処理方法及び基板温度の設定可能帯域の変更方法
CN104380101B (zh) 2012-02-22 2016-10-19 安捷伦科技有限公司 质量流量控制器以及在不关闭质量流量控制器的情况下自动调零流量传感器的方法
JP5881467B2 (ja) 2012-02-29 2016-03-09 株式会社フジキン ガス分流供給装置及びこれを用いたガス分流供給方法
CN102610476B (zh) 2012-03-12 2015-05-27 中微半导体设备(上海)有限公司 一种静电吸盘
US20130255784A1 (en) 2012-03-30 2013-10-03 Applied Materials, Inc. Gas delivery systems and methods of use thereof
US9682398B2 (en) 2012-03-30 2017-06-20 Applied Materials, Inc. Substrate processing system having susceptorless substrate support with enhanced substrate heating control
US9301383B2 (en) 2012-03-30 2016-03-29 Tokyo Electron Limited Low electron temperature, edge-density enhanced, surface wave plasma (SWP) processing method and apparatus
CN104137249B (zh) 2012-04-25 2017-11-14 应用材料公司 晶片边缘的测量和控制
US9948214B2 (en) 2012-04-26 2018-04-17 Applied Materials, Inc. High temperature electrostatic chuck with real-time heat zone regulating capability
KR101390422B1 (ko) 2012-05-07 2014-04-29 주식회사 제우스 Ｌｃｄ 글라스 기판용 오븐챔버의 리프트 핀 유닛
KR101974420B1 (ko) 2012-06-08 2019-05-02 세메스 주식회사 기판처리장치 및 방법
KR101974422B1 (ko) 2012-06-27 2019-05-02 세메스 주식회사 기판처리장치 및 방법
US9243325B2 (en) 2012-07-18 2016-01-26 Rohm And Haas Electronic Materials Llc Vapor delivery device, methods of manufacture and methods of use thereof
US9184030B2 (en) 2012-07-19 2015-11-10 Lam Research Corporation Edge exclusion control with adjustable plasma exclusion zone ring
US9023734B2 (en) 2012-09-18 2015-05-05 Applied Materials, Inc. Radical-component oxide etch
US8865602B2 (en) 2012-09-28 2014-10-21 Applied Materials, Inc. Edge ring lip
US9355839B2 (en) 2012-10-23 2016-05-31 Lam Research Corporation Sub-saturated atomic layer deposition and conformal film deposition
JP2014084523A (ja) 2012-10-26 2014-05-12 Sumitomo Heavy Ind Ltd 成膜装置
JP5616416B2 (ja) 2012-11-02 2014-10-29 株式会社フジキン 集積型ガス供給装置
US8969212B2 (en) 2012-11-20 2015-03-03 Applied Materials, Inc. Dry-etch selectivity
US20140144471A1 (en) 2012-11-28 2014-05-29 Intermolecular, Inc. Contamination Control, Rinsing, and Purging Methods to Extend the Life of Components within Combinatorial Processing Systems
US9090972B2 (en) 2012-12-31 2015-07-28 Lam Research Corporation Gas supply systems for substrate processing chambers and methods therefor
US9997381B2 (en) 2013-02-18 2018-06-12 Lam Research Corporation Hybrid edge ring for plasma wafer processing
US9362130B2 (en) 2013-03-01 2016-06-07 Applied Materials, Inc. Enhanced etching processes using remote plasma sources
CN106304597B (zh) 2013-03-12 2019-05-10 应用材料公司 具有方位角与径向分布控制的多区域气体注入组件
US9337002B2 (en) 2013-03-12 2016-05-10 Lam Research Corporation Corrosion resistant aluminum coating on plasma chamber components
US20140273460A1 (en) 2013-03-13 2014-09-18 Applied Materials, Inc. Passive control for through silicon via tilt in icp chamber
US9472443B2 (en) 2013-03-14 2016-10-18 Applied Materials, Inc. Selectively groundable cover ring for substrate process chambers
US10105883B2 (en) 2013-03-15 2018-10-23 Nanonex Corporation Imprint lithography system and method for manufacturing
US20140271097A1 (en) 2013-03-15 2014-09-18 Applied Materials, Inc. Processing systems and methods for halide scavenging
US9425077B2 (en) 2013-03-15 2016-08-23 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor apparatus with transportable edge ring for substrate transport
US9224583B2 (en) 2013-03-15 2015-12-29 Lam Research Corporation System and method for heating plasma exposed surfaces
KR20140132542A (ko) 2013-05-08 2014-11-18 주식회사 미코 세라믹 히터 및 이의 제조 방법
JP6853038B2 (ja) 2013-06-26 2021-03-31 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ Ｉｃｐプラズマ処理チャンバ内における高収率・基板最端部欠陥低減のための単一リング設計
FR3008266B1 (fr) 2013-07-03 2015-08-07 Commissariat Energie Atomique Procede et systeme d'acces multiple avec multiplexage frequentiel de requetes d'autorisation d'envoi de donnees
US20150010381A1 (en) 2013-07-08 2015-01-08 United Microelectronics Corp. Wafer processing chamber and method for transferring wafer in the same
US9147581B2 (en) 2013-07-11 2015-09-29 Lam Research Corporation Dual chamber plasma etcher with ion accelerator
CN107516626B (zh) 2013-07-19 2021-03-26 朗姆研究公司 用于原位晶片边缘和背侧等离子体清洁的系统和方法
US20150020848A1 (en) 2013-07-19 2015-01-22 Lam Research Corporation Systems and Methods for In-Situ Wafer Edge and Backside Plasma Cleaning
US9816506B2 (en) 2013-07-31 2017-11-14 Trane International Inc. Intermediate oil separator for improved performance in a scroll compressor
US9123661B2 (en) 2013-08-07 2015-09-01 Lam Research Corporation Silicon containing confinement ring for plasma processing apparatus and method of forming thereof
JP6193679B2 (ja) 2013-08-30 2017-09-06 株式会社フジキン ガス分流供給装置及びガス分流供給方法
US10937634B2 (en) 2013-10-04 2021-03-02 Lam Research Corporation Tunable upper plasma-exclusion-zone ring for a bevel etcher
JP2015109249A (ja) 2013-10-22 2015-06-11 東京エレクトロン株式会社 プラズマ処理装置
CN103730318B (zh) 2013-11-15 2016-04-06 中微半导体设备(上海)有限公司 一种晶圆边缘保护环及减少晶圆边缘颗粒的方法
US10804081B2 (en) 2013-12-20 2020-10-13 Lam Research Corporation Edge ring dimensioned to extend lifetime of elastomer seal in a plasma processing chamber
WO2015099892A1 (en) 2013-12-23 2015-07-02 Applied Materials, Inc. Extreme edge and skew control in icp plasma reactor
US20150184287A1 (en) 2013-12-26 2015-07-02 Intermolecular, Inc. Systems and Methods for Parallel Combinatorial Vapor Deposition Processing
CN104752141B (zh) 2013-12-31 2017-02-08 中微半导体设备(上海)有限公司 一种等离子体处理装置及其运行方法
CN104851832B (zh) 2014-02-18 2018-01-19 北京北方华创微电子装备有限公司 一种固定装置、反应腔室及等离子体加工设备
CN104862660B (zh) 2014-02-24 2017-10-13 北京北方华创微电子装备有限公司 承载装置及等离子体加工设备
JP6218650B2 (ja) 2014-03-11 2017-10-25 東京エレクトロン株式会社 プラズマ処理装置
US9580360B2 (en) 2014-04-07 2017-02-28 Lam Research Corporation Monolithic ceramic component of gas delivery system and method of making and use thereof
JP6204869B2 (ja) 2014-04-09 2017-09-27 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
US20150340209A1 (en) 2014-05-20 2015-11-26 Micron Technology, Inc. Focus ring replacement method for a plasma reactor, and associated systems and methods
US9026244B1 (en) 2014-05-22 2015-05-05 Applied Materials, Inc. Presence sensing and position correction for wafer on a carrier ring
US9034771B1 (en) 2014-05-23 2015-05-19 Applied Materials, Inc. Cooling pedestal for dicing tape thermal management during plasma dicing
JP6442296B2 (ja) 2014-06-24 2018-12-19 東京エレクトロン株式会社 載置台及びプラズマ処理装置
CN105336561B (zh) 2014-07-18 2017-07-21 中微半导体设备(上海)有限公司 等离子体刻蚀装置
JP5767373B2 (ja) 2014-07-29 2015-08-19 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法並びにこれを実施するためのプログラムを記憶する記憶媒体
KR20160015510A (ko) 2014-07-30 2016-02-15 삼성전자주식회사 정전척 어셈블리, 이를 구비하는 반도체 제조장치, 및 이를 이용한 플라즈마 처리방법
JP2016046451A (ja) 2014-08-26 2016-04-04 株式会社アルバック 基板処理装置及び基板処理方法
JP6789932B2 (ja) 2014-10-17 2020-11-25 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ 調整可能ガスフロー制御のためのガス分離器を含むガス供給配送配置
US10242848B2 (en) 2014-12-12 2019-03-26 Lam Research Corporation Carrier ring structure and chamber systems including the same
US20160181116A1 (en) 2014-12-18 2016-06-23 Lam Research Corporation Selective nitride etch
US9865437B2 (en) 2014-12-30 2018-01-09 Applied Materials, Inc. High conductance process kit
KR102425455B1 (ko) 2015-01-09 2022-07-27 어플라이드 머티어리얼스, 인코포레이티드 기판 이송 메커니즘들
US11605546B2 (en) 2015-01-16 2023-03-14 Lam Research Corporation Moveable edge coupling ring for edge process control during semiconductor wafer processing
US20170263478A1 (en) 2015-01-16 2017-09-14 Lam Research Corporation Detection System for Tunable/Replaceable Edge Coupling Ring
US10658222B2 (en) 2015-01-16 2020-05-19 Lam Research Corporation Moveable edge coupling ring for edge process control during semiconductor wafer processing
TW201634738A (zh) 2015-01-22 2016-10-01 應用材料股份有限公司 用於在空間上分離之原子層沉積腔室的經改良注射器
US9911620B2 (en) 2015-02-23 2018-03-06 Lam Research Corporation Method for achieving ultra-high selectivity while etching silicon nitride
US9966270B2 (en) 2015-03-31 2018-05-08 Lam Research Corporation Gas reaction trajectory control through tunable plasma dissociation for wafer by-product distribution and etch feature profile uniformity
US10903055B2 (en) 2015-04-17 2021-01-26 Applied Materials, Inc. Edge ring for bevel polymer reduction
US10438795B2 (en) 2015-06-22 2019-10-08 Veeco Instruments, Inc. Self-centering wafer carrier system for chemical vapor deposition
US10957561B2 (en) 2015-07-30 2021-03-23 Lam Research Corporation Gas delivery system
US10153136B2 (en) 2015-08-04 2018-12-11 Lam Research Corporation Hollow RF feed with coaxial DC power feed
US9499289B1 (en) 2015-08-14 2016-11-22 Extreme Packaging Machinery, Inc. Film edge sealing device
US10854492B2 (en) 2015-08-18 2020-12-01 Lam Research Corporation Edge ring assembly for improving feature profile tilting at extreme edge of wafer
KR101805552B1 (ko) 2015-08-31 2017-12-08 엘지디스플레이 주식회사 유기발광 표시장치
US10879041B2 (en) 2015-09-04 2020-12-29 Applied Materials, Inc. Method and apparatus of achieving high input impedance without using ferrite materials for RF filter applications in plasma chambers
US9837286B2 (en) 2015-09-04 2017-12-05 Lam Research Corporation Systems and methods for selectively etching tungsten in a downstream reactor
JP6541565B2 (ja) 2015-09-25 2019-07-10 東京エレクトロン株式会社 載置台及びプラズマ処理装置
US10044338B2 (en) 2015-10-15 2018-08-07 Lam Research Corporation Mutually induced filters
US10192751B2 (en) 2015-10-15 2019-01-29 Lam Research Corporation Systems and methods for ultrahigh selective nitride etch
US10124492B2 (en) 2015-10-22 2018-11-13 Lam Research Corporation Automated replacement of consumable parts using end effectors interfacing with plasma processing system
US20170115657A1 (en) 2015-10-22 2017-04-27 Lam Research Corporation Systems for Removing and Replacing Consumable Parts from a Semiconductor Process Module in Situ
TWI725067B (zh) 2015-10-28 2021-04-21 美商應用材料股份有限公司 可旋轉靜電夾盤
US10985078B2 (en) 2015-11-06 2021-04-20 Lam Research Corporation Sensor and adjuster for a consumable
US10825659B2 (en) 2016-01-07 2020-11-03 Lam Research Corporation Substrate processing chamber including multiple gas injection points and dual injector
CN116110846A (zh) 2016-01-26 2023-05-12 应用材料公司 晶片边缘环升降解决方案
CN108369922B (zh) * 2016-01-26 2023-03-21 应用材料公司 晶片边缘环升降解决方案
JP6384679B2 (ja) 2016-01-27 2018-09-05 Ｊｆｅスチール株式会社 熱延鋼板の製造方法
DE102016202071A1 (de) 2016-02-11 2017-08-17 Siemens Aktiengesellschaft Elektrischer Leiter für eine elektrische Maschine mit erhöhtem Leistungsgewicht und elektrische Komponente für die elektrische Maschine
US10699878B2 (en) 2016-02-12 2020-06-30 Lam Research Corporation Chamber member of a plasma source and pedestal with radially outward positioned lift pins for translation of a substrate c-ring
US10147588B2 (en) 2016-02-12 2018-12-04 Lam Research Corporation System and method for increasing electron density levels in a plasma of a substrate processing system
US10651015B2 (en) 2016-02-12 2020-05-12 Lam Research Corporation Variable depth edge ring for etch uniformity control
US10438833B2 (en) 2016-02-16 2019-10-08 Lam Research Corporation Wafer lift ring system for wafer transfer
CN107093569B (zh) 2016-02-18 2019-07-05 北京北方华创微电子装备有限公司 一种晶片定位装置及反应腔室
JP7098273B2 (ja) * 2016-03-04 2022-07-11 アプライド マテリアルズ インコーポレイテッド ユニバーサルプロセスキット
JP6896754B2 (ja) 2016-03-05 2021-06-30 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 物理的気相堆積プロセスにおけるイオン分画を制御するための方法および装置
US20170278679A1 (en) 2016-03-24 2017-09-28 Lam Research Corporation Method and apparatus for controlling process within wafer uniformity
US11011353B2 (en) 2016-03-29 2021-05-18 Lam Research Corporation Systems and methods for performing edge ring characterization
US10312121B2 (en) 2016-03-29 2019-06-04 Lam Research Corporation Systems and methods for aligning measurement device in substrate processing systems
WO2017196540A1 (en) 2016-05-13 2017-11-16 Applied Materials, Inc. Sensor based auto-calibration wafer
DE102016212780A1 (de) 2016-07-13 2018-01-18 Siltronic Ag Vorrichtung zur Handhabung einer Halbleiterscheibe in einem Epitaxie-Reaktor und Verfahren zur Herstellung einer Halbleiterscheibe mit epitaktischer Schicht
JP6635888B2 (ja) 2016-07-14 2020-01-29 東京エレクトロン株式会社 プラズマ処理システム
US9698042B1 (en) 2016-07-22 2017-07-04 Lam Research Corporation Wafer centering in pocket to improve azimuthal thickness uniformity at wafer edge
US10410832B2 (en) 2016-08-19 2019-09-10 Lam Research Corporation Control of on-wafer CD uniformity with movable edge ring and gas injection adjustment
US10921251B2 (en) 2016-08-22 2021-02-16 Applied Materials, Inc. Chamber component part wear indicator and a system for detecting part wear
US10541168B2 (en) 2016-11-14 2020-01-21 Lam Research Corporation Edge ring centering method using ring dynamic alignment data
JP6812224B2 (ja) 2016-12-08 2021-01-13 東京エレクトロン株式会社 基板処理装置及び載置台
US9947517B1 (en) 2016-12-16 2018-04-17 Applied Materials, Inc. Adjustable extended electrode for edge uniformity control
US10910195B2 (en) 2017-01-05 2021-02-02 Lam Research Corporation Substrate support with improved process uniformity
US10553404B2 (en) 2017-02-01 2020-02-04 Applied Materials, Inc. Adjustable extended electrode for edge uniformity control
JP7055039B2 (ja) 2017-03-22 2022-04-15 東京エレクトロン株式会社 基板処理装置
US11404249B2 (en) 2017-03-22 2022-08-02 Tokyo Electron Limited Substrate processing apparatus
KR101927936B1 (ko) 2017-06-09 2018-12-11 세메스 주식회사 기판 처리 장치
KR102591660B1 (ko) 2017-07-24 2023-10-19 램 리써치 코포레이션 이동가능한 에지 링 설계들
WO2019103722A1 (en) 2017-11-21 2019-05-31 Lam Research Corporation Bottom and middle edge rings
TWI722257B (zh) 2017-11-21 2021-03-21 美商蘭姆研究公司 底部和中間邊緣環
CN120221492A (zh) 2017-12-05 2025-06-27 朗姆研究公司 用于边缘环损耗补偿的系统和方法
US11043400B2 (en) 2017-12-21 2021-06-22 Applied Materials, Inc. Movable and removable process kit
US11387134B2 (en) 2018-01-19 2022-07-12 Applied Materials, Inc. Process kit for a substrate support
CN111095523A (zh) * 2018-01-22 2020-05-01 应用材料公司 利用经供电的边缘环的处理
US10591934B2 (en) 2018-03-09 2020-03-17 Lam Research Corporation Mass flow controller for substrate processing
JP7061918B2 (ja) 2018-04-23 2022-05-02 東京エレクトロン株式会社 プラズマエッチング方法及びプラズマ処理装置
US11201037B2 (en) 2018-05-28 2021-12-14 Applied Materials, Inc. Process kit with adjustable tuning ring for edge uniformity control
US11093605B2 (en) 2018-06-28 2021-08-17 Cisco Technology, Inc. Monitoring real-time processor instruction stream execution
US10760944B2 (en) 2018-08-07 2020-09-01 Lam Research Corporation Hybrid flow metrology for improved chamber matching
CN118398464A (zh) 2018-08-13 2024-07-26 朗姆研究公司 可更换和/或可折叠的用于等离子鞘调整的并入边缘环定位和定心功能的边缘环组件
JP7115942B2 (ja) 2018-09-06 2022-08-09 東京エレクトロン株式会社 載置台、基板処理装置、エッジリング及びエッジリングの搬送方法
US20200234928A1 (en) 2019-01-17 2020-07-23 Applied Materials, Inc. Semiconductor plasma processing equipment with wafer edge plasma sheath tuning ability
WO2020180656A1 (en) 2019-03-06 2020-09-10 Lam Research Corporation Measurement system to measure a thickness of an adjustable edge ring for a substrate processing system
JP2020155489A (ja) 2019-03-18 2020-09-24 キオクシア株式会社 半導体製造装置および半導体装置の製造方法
US11018046B2 (en) 2019-04-12 2021-05-25 Samsung Electronics Co., Ltd. Substrate processing apparatus including edge ring
TWM588883U (zh) 2019-05-10 2020-01-01 美商蘭姆研究公司 半導體製程模組的中環
US12142466B2 (en) 2019-06-06 2024-11-12 Lam Research Corporation Automated transfer of edge ring requiring rotational alignment
JP2019195198A (ja) 2019-06-12 2019-11-07 株式会社東芝 通信装置、通信方法、プログラムおよび通信システム
TWM602283U (zh) 2019-08-05 2020-10-01 美商蘭姆研究公司 基板處理系統用之具有升降銷溝槽的邊緣環
WO2021025934A1 (en) 2019-08-05 2021-02-11 Lam Research Corporation Edge ring systems for substrate processing systems
KR20220044356A (ko) 2019-08-14 2022-04-07 램 리써치 코포레이션 기판 프로세싱 시스템들을 위한 이동 가능한 에지 링들
US11823937B2 (en) 2019-08-19 2023-11-21 Applied Materials, Inc. Calibration of an aligner station of a processing system
JP2021040011A (ja) 2019-09-02 2021-03-11 キオクシア株式会社 プラズマ処理装置
US11443923B2 (en) 2019-09-25 2022-09-13 Taiwan Semiconductor Manufacturing Company Ltd. Apparatus for fabricating a semiconductor structure and method of fabricating a semiconductor structure
KR102747645B1 (ko) 2019-10-10 2024-12-27 삼성전자주식회사 정전 척 및 상기 정전 척을 포함하는 기판 처리 장치
JP7715721B2 (ja) 2020-02-19 2025-07-30 ラム リサーチ コーポレーション 半導体処理チャンバの構成要素を調整する方法
US11766782B2 (en) 2020-03-17 2023-09-26 Applied Materials, Inc. Calibration of an electronics processing system
CN115315775A (zh) 2020-03-23 2022-11-08 朗姆研究公司 衬底处理系统中的中环腐蚀补偿
TWI908803B (zh) 2020-06-05 2025-12-21 日商東京威力科創股份有限公司 電漿處理裝置
CN116349002A (zh) 2020-10-05 2023-06-27 朗姆研究公司 用于等离子体处理系统的可移动边缘环
CN212874484U (zh) 2020-10-20 2021-04-02 深圳市诚金晖精密机械有限公司 一种程控电源盒的mos管多通道散热结构

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