JP7752172B2 - プラズマ処理システム用の可動エッジリング - Google Patents
プラズマ処理システム用の可動エッジリングInfo
- Publication number
- JP7752172B2 JP7752172B2 JP2023521034A JP2023521034A JP7752172B2 JP 7752172 B2 JP7752172 B2 JP 7752172B2 JP 2023521034 A JP2023521034 A JP 2023521034A JP 2023521034 A JP2023521034 A JP 2023521034A JP 7752172 B2 JP7752172 B2 JP 7752172B2
- Authority
- JP
- Japan
- Prior art keywords
- ring
- movable
- edge
- movable support
- shield
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32642—Focus rings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32651—Shields, e.g. dark space shields, Faraday shields
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
- H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
- H10P72/7611—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
- H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
- H10P72/7612—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by lifting arrangements, e.g. lift pins
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
- Plasma Technology (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2025161362A JP2025186503A (ja) | 2020-10-05 | 2025-09-29 | プラズマ処理システム用の可動エッジリング |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US202063087814P | 2020-10-05 | 2020-10-05 | |
| US63/087,814 | 2020-10-05 | ||
| PCT/US2021/052732 WO2022076227A1 (en) | 2020-10-05 | 2021-09-29 | Moveable edge rings for plasma processing systems |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025161362A Division JP2025186503A (ja) | 2020-10-05 | 2025-09-29 | プラズマ処理システム用の可動エッジリング |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2023546350A JP2023546350A (ja) | 2023-11-02 |
| JP2023546350A5 JP2023546350A5 (https=) | 2024-10-04 |
| JP7752172B2 true JP7752172B2 (ja) | 2025-10-09 |
Family
ID=81126208
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023521034A Active JP7752172B2 (ja) | 2020-10-05 | 2021-09-29 | プラズマ処理システム用の可動エッジリング |
| JP2025161362A Pending JP2025186503A (ja) | 2020-10-05 | 2025-09-29 | プラズマ処理システム用の可動エッジリング |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025161362A Pending JP2025186503A (ja) | 2020-10-05 | 2025-09-29 | プラズマ処理システム用の可動エッジリング |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US12562350B2 (https=) |
| EP (1) | EP4226415A4 (https=) |
| JP (2) | JP7752172B2 (https=) |
| KR (1) | KR20230079226A (https=) |
| CN (1) | CN116349002A (https=) |
| TW (1) | TWI899341B (https=) |
| WO (1) | WO2022076227A1 (https=) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10658222B2 (en) | 2015-01-16 | 2020-05-19 | Lam Research Corporation | Moveable edge coupling ring for edge process control during semiconductor wafer processing |
| WO2019103722A1 (en) | 2017-11-21 | 2019-05-31 | Lam Research Corporation | Bottom and middle edge rings |
| CN118398464A (zh) | 2018-08-13 | 2024-07-26 | 朗姆研究公司 | 可更换和/或可折叠的用于等离子鞘调整的并入边缘环定位和定心功能的边缘环组件 |
| CN115315775A (zh) | 2020-03-23 | 2022-11-08 | 朗姆研究公司 | 衬底处理系统中的中环腐蚀补偿 |
| CN116349002A (zh) | 2020-10-05 | 2023-06-27 | 朗姆研究公司 | 用于等离子体处理系统的可移动边缘环 |
| CN115440558A (zh) * | 2021-06-03 | 2022-12-06 | 长鑫存储技术有限公司 | 半导体蚀刻设备 |
| EP4526921A1 (en) * | 2022-05-17 | 2025-03-26 | Lam Research Corporation | Self-centering edge ring |
| US20240030006A1 (en) * | 2022-07-25 | 2024-01-25 | Micron Technology, Inc. | Erosion rate monitoring for wafer fabrication equipment |
| TW202433543A (zh) * | 2022-11-03 | 2024-08-16 | 美商蘭姆研究公司 | 增加關聯於邊緣環之熱傳接觸面積的系統及方法 |
| TWI885666B (zh) * | 2023-12-27 | 2025-06-01 | 南韓商維人股份有限公司 | 淺蝕刻處理腔室 |
| KR20250112005A (ko) * | 2024-01-16 | 2025-07-23 | 삼성전자주식회사 | 포커스 링, 이를 포함하는 기판 처리 장치 및 이를 이용한 기판 처리 방법 |
| US12562351B2 (en) * | 2024-01-30 | 2026-02-24 | Applied Materials, Inc. | Extreme edge sheath tunability with non-movable edge ring |
| WO2025174512A1 (en) * | 2024-02-13 | 2025-08-21 | Lam Research Corporation | Edge ring with conductive contact interface |
| US12614701B2 (en) | 2024-05-15 | 2026-04-28 | Applied Materials, Inc. | Substrate processing chamber with plasma confinement |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001230239A (ja) | 2000-02-15 | 2001-08-24 | Tokyo Electron Ltd | 処理装置及び処理方法 |
| JP2005539397A (ja) | 2002-09-18 | 2005-12-22 | ラム リサーチ コーポレーション | プラズマ処理チャンバー内におけるエッジリング磨耗の補償のための方法および装置 |
| JP2012146742A (ja) | 2011-01-07 | 2012-08-02 | Tokyo Electron Ltd | フォーカスリング及び該フォーカスリングを備える基板処理装置 |
| JP2014232884A (ja) | 2014-07-29 | 2014-12-11 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法並びにこれを実施するためのプログラムを記憶する記憶媒体 |
| JP2018098187A (ja) | 2016-12-16 | 2018-06-21 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | エッジ均一性制御のための調整可能な延長電極 |
| JP2018160666A (ja) | 2017-03-22 | 2018-10-11 | 東京エレクトロン株式会社 | 基板処理装置 |
| US20180358211A1 (en) | 2017-06-09 | 2018-12-13 | Semes Co., Ltd. | Substrate treating apparatus |
| JP2019208023A (ja) | 2018-05-28 | 2019-12-05 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 端部均一性制御のための可調整チューニングリングを有するプロセスキット |
| JP2020115541A (ja) | 2019-01-17 | 2020-07-30 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | ウェハエッジプラズマシース調整機能を備える半導体プラズマ処理装置 |
Family Cites Families (380)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0293063A (ja) | 1988-09-30 | 1990-04-03 | Mitsubishi Heavy Ind Ltd | 真空蒸発装置用るつぼ |
| EP0424299A3 (en) | 1989-10-20 | 1991-08-28 | International Business Machines Corporation | Selective silicon nitride plasma etching |
| US5304248A (en) | 1990-12-05 | 1994-04-19 | Applied Materials, Inc. | Passive shield for CVD wafer processing which provides frontside edge exclusion and prevents backside depositions |
| US6024826A (en) | 1996-05-13 | 2000-02-15 | Applied Materials, Inc. | Plasma reactor with heated source of a polymer-hardening precursor material |
| JP3173693B2 (ja) | 1993-10-04 | 2001-06-04 | 東京エレクトロン株式会社 | プラズマ処理装置及びその方法 |
| US5529657A (en) | 1993-10-04 | 1996-06-25 | Tokyo Electron Limited | Plasma processing apparatus |
| TW254030B (en) | 1994-03-18 | 1995-08-11 | Anelva Corp | Mechanic escape mechanism for substrate |
| TW283250B (en) | 1995-07-10 | 1996-08-11 | Watkins Johnson Co | Plasma enhanced chemical processing reactor and method |
| US5846332A (en) * | 1996-07-12 | 1998-12-08 | Applied Materials, Inc. | Thermally floating pedestal collar in a chemical vapor deposition chamber |
| US5837058A (en) | 1996-07-12 | 1998-11-17 | Applied Materials, Inc. | High temperature susceptor |
| US5879128A (en) | 1996-07-24 | 1999-03-09 | Applied Materials, Inc. | Lift pin and support pin apparatus for a processing chamber |
| US5848889A (en) | 1996-07-24 | 1998-12-15 | Applied Materials Inc. | Semiconductor wafer support with graded thermal mass |
| JP3247079B2 (ja) | 1997-02-06 | 2002-01-15 | 松下電器産業株式会社 | エッチング方法及びエッチング装置 |
| US5942039A (en) | 1997-05-01 | 1999-08-24 | Applied Materials, Inc. | Self-cleaning focus ring |
| DE19718501A1 (de) | 1997-05-02 | 1998-11-05 | Fhp Motors Gmbh | Haltevorrichtung für eine Statorwicklung eines Elektromotors |
| JP2001522142A (ja) | 1997-11-03 | 2001-11-13 | エーエスエム アメリカ インコーポレイテッド | 改良された低質量ウェハ支持システム |
| US6106625A (en) | 1997-12-02 | 2000-08-22 | Applied Materials, Inc. | Reactor useful for chemical vapor deposition of titanium nitride |
| US6511543B1 (en) | 1997-12-23 | 2003-01-28 | Unaxis Balzers Aktiengesellschaft | Holding device |
| JP2000036488A (ja) | 1998-07-21 | 2000-02-02 | Speedfam-Ipec Co Ltd | ウエハ平坦化方法及びそのシステム |
| JP3076791B2 (ja) | 1998-10-19 | 2000-08-14 | アプライド マテリアルズ インコーポレイテッド | 半導体製造装置 |
| WO2000026939A1 (en) | 1998-10-29 | 2000-05-11 | Applied Materials, Inc. | Apparatus for coupling power through a workpiece in a semiconductor wafer processing system |
| US6579805B1 (en) | 1999-01-05 | 2003-06-17 | Ronal Systems Corp. | In situ chemical generator and method |
| US6508911B1 (en) | 1999-08-16 | 2003-01-21 | Applied Materials Inc. | Diamond coated parts in a plasma reactor |
| JP4592849B2 (ja) | 1999-10-29 | 2010-12-08 | アプライド マテリアルズ インコーポレイテッド | 半導体製造装置 |
| US6589352B1 (en) | 1999-12-10 | 2003-07-08 | Applied Materials, Inc. | Self aligning non contact shadow ring process kit |
| JP2003518766A (ja) | 1999-12-23 | 2003-06-10 | アプライド マテリアルズ インコーポレイテッド | オープン領域の多いシリコン構造を異方性エッチングするためのフッ素ベースプラズマエッチング方法 |
| JP4422295B2 (ja) | 2000-05-17 | 2010-02-24 | キヤノンアネルバ株式会社 | Cvd装置 |
| KR100609533B1 (ko) | 2000-06-30 | 2006-08-04 | 주식회사 하이닉스반도체 | 반도체소자의 캐패시터 형성방법 |
| TW506234B (en) | 2000-09-18 | 2002-10-11 | Tokyo Electron Ltd | Tunable focus ring for plasma processing |
| JP4526683B2 (ja) | 2000-10-31 | 2010-08-18 | 株式会社山形信越石英 | 石英ガラス製ウェーハ支持治具及びその製造方法 |
| JP3388228B2 (ja) | 2000-12-07 | 2003-03-17 | 株式会社半導体先端テクノロジーズ | プラズマエッチング装置、及びプラズマエッチング方法 |
| US6537429B2 (en) | 2000-12-29 | 2003-03-25 | Lam Research Corporation | Diamond coatings on reactor wall and method of manufacturing thereof |
| JP4433614B2 (ja) | 2001-01-17 | 2010-03-17 | ソニー株式会社 | エッチング装置 |
| JP4477784B2 (ja) | 2001-02-02 | 2010-06-09 | 東京エレクトロン株式会社 | 被処理体の載置機構 |
| KR20020071398A (ko) | 2001-03-06 | 2002-09-12 | 삼성전자 주식회사 | 반도체 장치의 제조에서 건식 식각 장치 |
| KR20040019293A (ko) | 2001-05-24 | 2004-03-05 | 셀레리티 그룹 아이엔씨 | 소정 비율의 프로세스 유체를 제공하는 방법 및 장치 |
| US20020189947A1 (en) | 2001-06-13 | 2002-12-19 | Eksigent Technologies Llp | Electroosmotic flow controller |
| AU2002366921A1 (en) | 2001-12-13 | 2003-07-09 | Tokyo Electron Limited | Ring mechanism, and plasma processing device using the ring mechanism |
| KR20030065126A (ko) | 2002-01-31 | 2003-08-06 | (주) 엠큐브테크놀로지 | 자기장을 이용한 기기의 자극코일 냉각시스템 |
| US20040040664A1 (en) | 2002-06-03 | 2004-03-04 | Yang Jang Gyoo | Cathode pedestal for a plasma etch reactor |
| JP3856730B2 (ja) | 2002-06-03 | 2006-12-13 | 東京エレクトロン株式会社 | 流量制御装置を備えたガス供給設備からのチャンバーへのガス分流供給方法。 |
| US7903742B2 (en) | 2002-07-15 | 2011-03-08 | Thomson Licensing | Adaptive weighting of reference pictures in video decoding |
| JP4502590B2 (ja) | 2002-11-15 | 2010-07-14 | 株式会社ルネサステクノロジ | 半導体製造装置 |
| US7311784B2 (en) | 2002-11-26 | 2007-12-25 | Tokyo Electron Limited | Plasma processing device |
| KR20040050080A (ko) | 2002-12-09 | 2004-06-16 | 주식회사 하이닉스반도체 | 플라즈마 식각 챔버용 포커스 링 구동 장치 |
| US7169231B2 (en) | 2002-12-13 | 2007-01-30 | Lam Research Corporation | Gas distribution system with tuning gas |
| US20040112540A1 (en) | 2002-12-13 | 2004-06-17 | Lam Research Corporation | Uniform etch system |
| US6997202B2 (en) | 2002-12-17 | 2006-02-14 | Advanced Technology Materials, Inc. | Gas storage and dispensing system for variable conductance dispensing of gas at constant flow rate |
| US20040163601A1 (en) | 2003-02-26 | 2004-08-26 | Masanori Kadotani | Plasma processing apparatus |
| US20040168719A1 (en) | 2003-02-28 | 2004-09-02 | Masahiro Nambu | System for dividing gas flow |
| JP4286025B2 (ja) | 2003-03-03 | 2009-06-24 | 川崎マイクロエレクトロニクス株式会社 | 石英治具の再生方法、再生使用方法および半導体装置の製造方法 |
| US6907904B2 (en) | 2003-03-03 | 2005-06-21 | Redwood Microsystems, Inc. | Fluid delivery system and mounting panel therefor |
| JP2004296553A (ja) | 2003-03-25 | 2004-10-21 | Ngk Insulators Ltd | 半導体製造装置用部材 |
| JP4394073B2 (ja) | 2003-05-02 | 2010-01-06 | 東京エレクトロン株式会社 | 処理ガス導入機構およびプラズマ処理装置 |
| CN101106070B (zh) | 2003-05-02 | 2012-01-11 | 东京毅力科创株式会社 | 处理气体导入机构和等离子体处理装置 |
| TW200507141A (en) | 2003-05-12 | 2005-02-16 | Agere Systems Inc | Method of mass flow control flow verification and calibration |
| WO2004109420A1 (ja) | 2003-06-09 | 2004-12-16 | Ckd Corporation | 相対的圧力制御システム及び相対的流量制御システム |
| JP4195837B2 (ja) | 2003-06-20 | 2008-12-17 | 東京エレクトロン株式会社 | ガス分流供給装置及びガス分流供給方法 |
| US6955072B2 (en) | 2003-06-25 | 2005-10-18 | Mks Instruments, Inc. | System and method for in-situ flow verification and calibration |
| US7064812B2 (en) | 2003-08-19 | 2006-06-20 | Tokyo Electron Limited | Method of using a sensor gas to determine erosion level of consumable system components |
| KR100578129B1 (ko) | 2003-09-19 | 2006-05-10 | 삼성전자주식회사 | 플라즈마 식각 장치 |
| US7137400B2 (en) | 2003-09-30 | 2006-11-21 | Agere Systems Inc. | Bypass loop gas flow calibration |
| JP4399227B2 (ja) | 2003-10-06 | 2010-01-13 | 株式会社フジキン | チャンバの内圧制御装置及び内圧被制御式チャンバ |
| US6869348B1 (en) | 2003-10-07 | 2005-03-22 | Strasbaugh | Retaining ring for wafer carriers |
| US7128806B2 (en) | 2003-10-21 | 2006-10-31 | Applied Materials, Inc. | Mask etch processing apparatus |
| KR20050038898A (ko) | 2003-10-23 | 2005-04-29 | 삼성전자주식회사 | 반도체 기판의 건식 식각 장치 |
| US7244336B2 (en) | 2003-12-17 | 2007-07-17 | Lam Research Corporation | Temperature controlled hot edge ring assembly for reducing plasma reactor etch rate drift |
| US20050155625A1 (en) | 2004-01-20 | 2005-07-21 | Taiwan Semiconductor Manufacturing Co., Ltd. | Chamber cleaning method |
| US7095179B2 (en) | 2004-02-22 | 2006-08-22 | Zond, Inc. | Methods and apparatus for generating strongly-ionized plasmas with ionizational instabilities |
| US7247348B2 (en) | 2004-02-25 | 2007-07-24 | Honeywell International, Inc. | Method for manufacturing a erosion preventative diamond-like coating for a turbine engine compressor blade |
| US7072743B2 (en) | 2004-03-09 | 2006-07-04 | Mks Instruments, Inc. | Semiconductor manufacturing gas flow divider system and method |
| JP2005288853A (ja) | 2004-03-31 | 2005-10-20 | Brother Ind Ltd | インクジェットヘッドの製造方法及びインクジェットヘッド |
| US20070066038A1 (en) | 2004-04-30 | 2007-03-22 | Lam Research Corporation | Fast gas switching plasma processing apparatus |
| US7708859B2 (en) | 2004-04-30 | 2010-05-04 | Lam Research Corporation | Gas distribution system having fast gas switching capabilities |
| US7412986B2 (en) | 2004-07-09 | 2008-08-19 | Celerity, Inc. | Method and system for flow measurement and validation of a mass flow controller |
| US20060124169A1 (en) | 2004-12-09 | 2006-06-15 | Tokyo Electron Limited | Gas supply unit, substrate processing apparatus, and supply gas setting method |
| JP2006173223A (ja) | 2004-12-14 | 2006-06-29 | Toshiba Corp | プラズマエッチング装置およびそれを用いたプラズマエッチング方法 |
| JP4006004B2 (ja) | 2004-12-28 | 2007-11-14 | 株式会社東芝 | 半導体製造装置及び半導体装置の製造方法 |
| WO2006073908A2 (en) | 2004-12-30 | 2006-07-13 | E.I. Dupont De Nemours And Company | Electronic device having a mirror stack |
| JP4707421B2 (ja) | 2005-03-14 | 2011-06-22 | 東京エレクトロン株式会社 | 処理装置,処理装置の消耗部品管理方法,処理システム,処理システムの消耗部品管理方法 |
| US7376520B2 (en) | 2005-03-16 | 2008-05-20 | Lam Research Corporation | System and method for gas flow verification |
| US7621290B2 (en) | 2005-04-21 | 2009-11-24 | Mks Instruments, Inc. | Gas delivery method and system including a flow ratio controller using antisymmetric optimal control |
| JP2006344701A (ja) | 2005-06-08 | 2006-12-21 | Matsushita Electric Ind Co Ltd | エッチング装置およびエッチング方法 |
| KR100621778B1 (ko) | 2005-06-17 | 2006-09-11 | 삼성전자주식회사 | 플라즈마 처리 장치 |
| US20070021935A1 (en) | 2005-07-12 | 2007-01-25 | Larson Dean J | Methods for verifying gas flow rates from a gas supply system into a plasma processing chamber |
| US7431788B2 (en) | 2005-07-19 | 2008-10-07 | Lam Research Corporation | Method of protecting a bond layer in a substrate support adapted for use in a plasma processing system |
| US7322629B2 (en) | 2005-07-26 | 2008-01-29 | Intier Automotive Inc. | Locking hinge for a door structure |
| JP4804824B2 (ja) | 2005-07-27 | 2011-11-02 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
| US7291560B2 (en) | 2005-08-01 | 2007-11-06 | Infineon Technologies Ag | Method of production pitch fractionizations in semiconductor technology |
| US20070032081A1 (en) | 2005-08-08 | 2007-02-08 | Jeremy Chang | Edge ring assembly with dielectric spacer ring |
| US8088248B2 (en) | 2006-01-11 | 2012-01-03 | Lam Research Corporation | Gas switching section including valves having different flow coefficients for gas distribution system |
| JP4895167B2 (ja) | 2006-01-31 | 2012-03-14 | 東京エレクトロン株式会社 | ガス供給装置,基板処理装置,ガス供給方法 |
| US20070187363A1 (en) | 2006-02-13 | 2007-08-16 | Tokyo Electron Limited | Substrate processing apparatus and substrate processing method |
| JP4909609B2 (ja) | 2006-03-01 | 2012-04-04 | 株式会社東芝 | 加工形状シミュレーション方法、半導体装置の製造方法及び加工形状シミュレーションシステム |
| US20070204914A1 (en) | 2006-03-01 | 2007-09-06 | Asahi Organic Chemicals Industry Co., Ltd. | Fluid mixing system |
| US7578258B2 (en) | 2006-03-03 | 2009-08-25 | Lam Research Corporation | Methods and apparatus for selective pre-coating of a plasma processing chamber |
| DE112007000527B4 (de) | 2006-03-06 | 2016-09-08 | Diamond Innovations, Inc. | Prothese für Gelenkersatz |
| JP4788920B2 (ja) | 2006-03-20 | 2011-10-05 | 日立金属株式会社 | 質量流量制御装置、その検定方法及び半導体製造装置 |
| US7674337B2 (en) | 2006-04-07 | 2010-03-09 | Applied Materials, Inc. | Gas manifolds for use during epitaxial film formation |
| US8997791B2 (en) | 2006-04-14 | 2015-04-07 | Mks Instruments, Inc. | Multiple-channel flow ratio controller |
| US8475625B2 (en) | 2006-05-03 | 2013-07-02 | Applied Materials, Inc. | Apparatus for etching high aspect ratio features |
| US8440049B2 (en) | 2006-05-03 | 2013-05-14 | Applied Materials, Inc. | Apparatus for etching high aspect ratio features |
| US20070283884A1 (en) | 2006-05-30 | 2007-12-13 | Applied Materials, Inc. | Ring assembly for substrate processing chamber |
| JP2007332022A (ja) | 2006-06-13 | 2007-12-27 | Young Sang Cho | 多結晶シリコンインゴット製造装置 |
| US7777152B2 (en) | 2006-06-13 | 2010-08-17 | Applied Materials, Inc. | High AC current high RF power AC-RF decoupling filter for plasma reactor heated electrostatic chuck |
| JP4814706B2 (ja) | 2006-06-27 | 2011-11-16 | 株式会社フジキン | 流量比可変型流体供給装置 |
| JP4806598B2 (ja) | 2006-07-18 | 2011-11-02 | 株式会社日立ハイテクノロジーズ | 真空処理装置 |
| KR101352365B1 (ko) | 2006-08-09 | 2014-01-16 | 엘아이지에이디피 주식회사 | 플라즈마 처리장치 |
| CN101506561B (zh) | 2006-08-23 | 2012-04-18 | 株式会社堀场Stec | 组合式气体分配盘装置 |
| KR20080023569A (ko) | 2006-09-11 | 2008-03-14 | 주식회사 하이닉스반도체 | 식각프로파일 변형을 방지하는 플라즈마식각장치 |
| KR100803858B1 (ko) * | 2006-09-21 | 2008-02-14 | 현대자동차주식회사 | 헬리컬기어 가공용 고정장치 |
| US7875824B2 (en) | 2006-10-16 | 2011-01-25 | Lam Research Corporation | Quartz guard ring centering features |
| EP2104755A4 (en) | 2006-10-26 | 2011-01-12 | Symyx Solutions Inc | HIGH PRESSURE PARALLEL FIXED BIN REACTOR AND METHOD THEREFOR |
| US7964818B2 (en) | 2006-10-30 | 2011-06-21 | Applied Materials, Inc. | Method and apparatus for photomask etching |
| US9405298B2 (en) | 2006-11-20 | 2016-08-02 | Applied Materials, Inc. | System and method to divide fluid flow in a predetermined ratio |
| US20080121177A1 (en) | 2006-11-28 | 2008-05-29 | Applied Materials, Inc. | Dual top gas feed through distributor for high density plasma chamber |
| US7758698B2 (en) | 2006-11-28 | 2010-07-20 | Applied Materials, Inc. | Dual top gas feed through distributor for high density plasma chamber |
| CN101563663B (zh) | 2006-12-05 | 2011-09-21 | 株式会社堀场Stec | 流量控制装置的检定方法 |
| US8019481B2 (en) | 2006-12-12 | 2011-09-13 | Horiba Stec, Co., Ltd. | Flow rate ratio control device |
| SE530902C2 (sv) | 2006-12-19 | 2008-10-14 | Alfa Laval Corp Ab | Sektionerad flödesanordning och förfarande för att reglera temperaturen i denna |
| JP4792381B2 (ja) | 2006-12-25 | 2011-10-12 | 東京エレクトロン株式会社 | 基板処理装置、フォーカスリングの加熱方法及び基板処理方法 |
| KR100783062B1 (ko) | 2006-12-27 | 2007-12-07 | 세메스 주식회사 | 기판 지지 장치, 플라즈마 식각 장치 및 플라즈마 식각방법 |
| KR100849179B1 (ko) | 2007-01-10 | 2008-07-30 | 삼성전자주식회사 | 갭 발생방지구조 및 이를 갖는 플라즈마 처리설비 |
| TW200832901A (en) | 2007-01-18 | 2008-08-01 | Asustek Comp Inc | Filter circuit for reducing EMI of differential signal |
| US7846497B2 (en) | 2007-02-26 | 2010-12-07 | Applied Materials, Inc. | Method and apparatus for controlling gas flow to a processing chamber |
| US7775236B2 (en) | 2007-02-26 | 2010-08-17 | Applied Materials, Inc. | Method and apparatus for controlling gas flow to a processing chamber |
| US8074677B2 (en) | 2007-02-26 | 2011-12-13 | Applied Materials, Inc. | Method and apparatus for controlling gas flow to a processing chamber |
| US7988813B2 (en) | 2007-03-12 | 2011-08-02 | Tokyo Electron Limited | Dynamic control of process chemistry for improved within-substrate process uniformity |
| JP5317424B2 (ja) | 2007-03-28 | 2013-10-16 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| JP2008251681A (ja) | 2007-03-29 | 2008-10-16 | Hitachi High-Technologies Corp | ウエハステージ |
| US7718559B2 (en) | 2007-04-20 | 2010-05-18 | Applied Materials, Inc. | Erosion resistance enhanced quartz used in plasma etch chamber |
| US8062487B2 (en) | 2007-06-25 | 2011-11-22 | United Microelectronics Corp. | Wafer supporting device of a sputtering apparatus |
| US8563619B2 (en) | 2007-06-28 | 2013-10-22 | Lam Research Corporation | Methods and arrangements for plasma processing system with tunable capacitance |
| WO2009014963A1 (en) | 2007-07-20 | 2009-01-29 | Bp Corporation North America Inc. | Methods and apparatuses for manufacturing cast silicon from seed crystals |
| US8202393B2 (en) | 2007-08-29 | 2012-06-19 | Lam Research Corporation | Alternate gas delivery and evacuation system for plasma processing apparatuses |
| JP2009060011A (ja) | 2007-09-03 | 2009-03-19 | Tokyo Electron Ltd | 基板載置台、基板処理装置、及び温度制御方法 |
| US8440259B2 (en) | 2007-09-05 | 2013-05-14 | Intermolecular, Inc. | Vapor based combinatorial processing |
| US7832354B2 (en) | 2007-09-05 | 2010-11-16 | Applied Materials, Inc. | Cathode liner with wafer edge gas injection in a plasma reactor chamber |
| US7824146B2 (en) | 2007-09-07 | 2010-11-02 | Advanced Technology Development Facility | Automated systems and methods for adapting semiconductor fabrication tools to process wafers of different diameters |
| JP4858395B2 (ja) | 2007-10-12 | 2012-01-18 | パナソニック株式会社 | プラズマ処理装置 |
| JP5459895B2 (ja) | 2007-10-15 | 2014-04-02 | Ckd株式会社 | ガス分流供給ユニット |
| US20100264117A1 (en) | 2007-10-31 | 2010-10-21 | Tohoku University | Plasma processing system and plasma processing method |
| JP2009123795A (ja) | 2007-11-13 | 2009-06-04 | Hitachi Kokusai Electric Inc | 半導体装置の製造方法及び基板処理装置 |
| US8191397B2 (en) | 2007-12-12 | 2012-06-05 | Air Liquide Electronics U.S. Lp | Methods for checking and calibrating concentration sensors in a semiconductor processing chamber |
| US8999106B2 (en) | 2007-12-19 | 2015-04-07 | Applied Materials, Inc. | Apparatus and method for controlling edge performance in an inductively coupled plasma chamber |
| US8037894B1 (en) | 2007-12-27 | 2011-10-18 | Intermolecular, Inc. | Maintaining flow rate of a fluid |
| US20100269924A1 (en) | 2007-12-27 | 2010-10-28 | Horiba Stec, Co., Ltd. | Flow rate ratio controlling apparatus |
| KR101590655B1 (ko) | 2007-12-27 | 2016-02-18 | 램 리써치 코포레이션 | 동적 정렬 빔 교정의 방법 및 시스템 |
| EP2247819B1 (en) | 2008-01-18 | 2022-11-02 | Pivotal Systems Corporation | Method and apparatus for in situ testing of gas flow controllers |
| JP2009188173A (ja) | 2008-02-06 | 2009-08-20 | Tokyo Electron Ltd | 基板処理方法及び基板処理装置 |
| US7754518B2 (en) | 2008-02-15 | 2010-07-13 | Applied Materials, Inc. | Millisecond annealing (DSA) edge protection |
| JPWO2009107777A1 (ja) | 2008-02-27 | 2011-07-07 | 株式会社東芝 | 動画像符号化/復号装置 |
| US8969151B2 (en) | 2008-02-29 | 2015-03-03 | Globalfoundries Singapore Pte. Ltd. | Integrated circuit system employing resistance altering techniques |
| US8110068B2 (en) | 2008-03-20 | 2012-02-07 | Novellus Systems, Inc. | Gas flow distribution receptacles, plasma generator systems, and methods for performing plasma stripping processes |
| WO2009117565A2 (en) | 2008-03-21 | 2009-09-24 | Applied Materials, Inc. | Method and apparatus of a substrate etching system and process |
| CN101552182B (zh) | 2008-03-31 | 2010-11-03 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 一种用于半导体制造工艺中的边缘环机构 |
| US9062379B2 (en) | 2008-04-16 | 2015-06-23 | Applied Materials, Inc. | Wafer processing deposition shielding components |
| JP5916384B2 (ja) | 2008-04-16 | 2016-05-11 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | ウェハ処理堆積物遮蔽構成材 |
| US8185242B2 (en) | 2008-05-07 | 2012-05-22 | Lam Research Corporation | Dynamic alignment of wafers using compensation values obtained through a series of wafer movements |
| RU2011101453A (ru) | 2008-06-16 | 2012-07-27 | ДжиТи СОЛАР ИНКОРПОРЕЙТЕД (US) | Системы и способы выращивания монокристаллических кремниевых слитков путем направленного отверждения |
| JP2010034416A (ja) | 2008-07-30 | 2010-02-12 | Hitachi High-Technologies Corp | プラズマ処理装置およびプラズマ処理方法 |
| BRPI0917012A2 (pt) | 2008-08-13 | 2016-02-16 | Shell Int Research | método e aparelho para controlar o fluxo de gás entre uma ou mais correntes de entrada e uma ou mais correntes de saída através de uma conjunção |
| US8287650B2 (en) | 2008-09-10 | 2012-10-16 | Applied Materials, Inc. | Low sloped edge ring for plasma processing chamber |
| US8089046B2 (en) | 2008-09-19 | 2012-01-03 | Applied Materials, Inc. | Method and apparatus for calibrating mass flow controllers |
| WO2010062345A2 (en) | 2008-10-31 | 2010-06-03 | Lam Research Corporation | Lower electrode assembly of plasma processing chamber |
| US20100122655A1 (en) | 2008-11-14 | 2010-05-20 | Tiner Robin L | Ball supported shadow frame |
| CN102217054B (zh) | 2008-11-25 | 2013-05-08 | 京瓷株式会社 | 晶片加热装置、静电卡盘以及晶片加热装置的制造方法 |
| US8809196B2 (en) | 2009-01-14 | 2014-08-19 | Tokyo Electron Limited | Method of etching a thin film using pressure modulation |
| JP5216632B2 (ja) | 2009-03-03 | 2013-06-19 | 東京エレクトロン株式会社 | 流体制御装置 |
| WO2010109848A1 (ja) | 2009-03-26 | 2010-09-30 | パナソニック株式会社 | プラズマ処理装置及びプラズマ処理方法 |
| JP5071437B2 (ja) | 2009-05-18 | 2012-11-14 | パナソニック株式会社 | プラズマ処理装置及びプラズマ処理装置におけるトレイの載置方法 |
| JP2011047930A (ja) | 2009-07-31 | 2011-03-10 | Tdk Corp | 磁気抵抗効果素子およびセンサ |
| JP5650935B2 (ja) | 2009-08-07 | 2015-01-07 | 東京エレクトロン株式会社 | 基板処理装置及び位置決め方法並びにフォーカスリング配置方法 |
| US8409995B2 (en) | 2009-08-07 | 2013-04-02 | Tokyo Electron Limited | Substrate processing apparatus, positioning method and focus ring installation method |
| KR101386552B1 (ko) | 2009-08-20 | 2014-04-17 | 도쿄엘렉트론가부시키가이샤 | 플라즈마 처리 장치 및 방법과 플라즈마 에칭 처리 장치 및 방법 |
| WO2011026126A2 (en) | 2009-08-31 | 2011-03-03 | Lam Research Corporation | A multi-peripheral ring arrangement for performing plasma confinement |
| KR20120098751A (ko) | 2009-10-26 | 2012-09-05 | 솔베이 플루오르 게엠베하 | Tft 매트릭스 제조를 위한 식각 공정 |
| DE202010014805U1 (de) | 2009-11-02 | 2011-02-17 | Lam Research Corporation (Delaware Corporation) | Heissrandring mit geneigter oberer Oberfläche |
| US8270141B2 (en) | 2009-11-20 | 2012-09-18 | Applied Materials, Inc. | Electrostatic chuck with reduced arcing |
| DE202010015933U1 (de) | 2009-12-01 | 2011-03-31 | Lam Research Corp.(N.D.Ges.D.Staates Delaware), Fremont | Eine Randringanordnung für Plasmaätzkammern |
| US20120244715A1 (en) | 2009-12-02 | 2012-09-27 | Xactix, Inc. | High-selectivity etching system and method |
| US9127361B2 (en) | 2009-12-07 | 2015-09-08 | Mks Instruments, Inc. | Methods of and apparatus for controlling pressure in multiple zones of a process tool |
| WO2011078242A1 (ja) | 2009-12-25 | 2011-06-30 | 株式会社堀場エステック | マスフローコントローラシステム |
| JP5466756B2 (ja) | 2010-03-04 | 2014-04-09 | 東京エレクトロン株式会社 | プラズマエッチング方法、半導体デバイスの製造方法、及びプラズマエッチング装置 |
| JP2011210853A (ja) | 2010-03-29 | 2011-10-20 | Tokyo Electron Ltd | 消耗量測定方法 |
| US20110265883A1 (en) | 2010-04-30 | 2011-11-03 | Applied Materials, Inc. | Methods and apparatus for reducing flow splitting errors using orifice ratio conductance control |
| US20110265951A1 (en) | 2010-04-30 | 2011-11-03 | Applied Materials, Inc. | Twin chamber processing system |
| KR101120184B1 (ko) | 2010-05-07 | 2012-02-27 | 주식회사 하이닉스반도체 | 반도체 소자의 패턴 형성 방법 |
| JP5584517B2 (ja) | 2010-05-12 | 2014-09-03 | 東京エレクトロン株式会社 | プラズマ処理装置及び半導体装置の製造方法 |
| US8485128B2 (en) | 2010-06-30 | 2013-07-16 | Lam Research Corporation | Movable ground ring for a plasma processing chamber |
| KR20130093597A (ko) | 2010-08-02 | 2013-08-22 | 바젤 폴리올레핀 게엠베하 | 유체 흐름들을 혼합하고 분할하는 방법 및 장치 |
| US9793126B2 (en) | 2010-08-04 | 2017-10-17 | Lam Research Corporation | Ion to neutral control for wafer processing with dual plasma source reactor |
| US8869742B2 (en) | 2010-08-04 | 2014-10-28 | Lam Research Corporation | Plasma processing chamber with dual axial gas injection and exhaust |
| US8742666B2 (en) | 2010-08-06 | 2014-06-03 | Lam Research Corporation | Radio frequency (RF) power filters and plasma processing systems including RF power filters |
| JP2012049376A (ja) | 2010-08-27 | 2012-03-08 | Hitachi High-Technologies Corp | プラズマ処理装置およびプラズマ処理方法 |
| JP5654297B2 (ja) | 2010-09-14 | 2015-01-14 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
| JP6080167B2 (ja) | 2010-10-01 | 2017-02-15 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 薄膜トランジスタ用途に用いられる砒化ガリウムに基づく材料 |
| US8633423B2 (en) | 2010-10-14 | 2014-01-21 | Applied Materials, Inc. | Methods and apparatus for controlling substrate temperature in a process chamber |
| US8905074B2 (en) | 2010-10-22 | 2014-12-09 | Applied Materials, Inc. | Apparatus for controlling gas distribution using orifice ratio conductance control |
| US9490166B2 (en) | 2010-12-08 | 2016-11-08 | Evatec Ag | Apparatus and method for depositing a layer onto a substrate |
| US20120149213A1 (en) | 2010-12-09 | 2012-06-14 | Lakshminarayana Nittala | Bottom up fill in high aspect ratio trenches |
| US9303319B2 (en) | 2010-12-17 | 2016-04-05 | Veeco Instruments Inc. | Gas injection system for chemical vapor deposition using sequenced valves |
| DE102010054875B4 (de) | 2010-12-17 | 2012-10-31 | Eagleburgmann Germany Gmbh & Co. Kg | Reibungsarmer Gleitring mit kostengünstiger Diamantbeschichtung |
| JP5855921B2 (ja) | 2010-12-17 | 2016-02-09 | 株式会社堀場エステック | ガス濃度調整装置 |
| US9790594B2 (en) | 2010-12-28 | 2017-10-17 | Asm Ip Holding B.V. | Combination CVD/ALD method, source and pulse profile modification |
| US8470127B2 (en) | 2011-01-06 | 2013-06-25 | Lam Research Corporation | Cam-locked showerhead electrode and assembly |
| JP5719599B2 (ja) | 2011-01-07 | 2015-05-20 | 東京エレクトロン株式会社 | 基板処理装置 |
| US8999856B2 (en) | 2011-03-14 | 2015-04-07 | Applied Materials, Inc. | Methods for etch of sin films |
| US9064815B2 (en) | 2011-03-14 | 2015-06-23 | Applied Materials, Inc. | Methods for etch of metal and metal-oxide films |
| JP2014508710A (ja) | 2011-03-15 | 2014-04-10 | ジーティーエイティー・コーポレーション | 結晶成長装置のための自動化視覚システム |
| US9476144B2 (en) | 2011-03-28 | 2016-10-25 | Applied Materials, Inc. | Method and apparatus for the selective deposition of epitaxial germanium stressor alloys |
| WO2012133585A1 (ja) | 2011-03-29 | 2012-10-04 | 東京エレクトロン株式会社 | プラズマエッチング装置及びプラズマエッチング方法 |
| JP6003011B2 (ja) | 2011-03-31 | 2016-10-05 | 東京エレクトロン株式会社 | 基板処理装置 |
| JP2012222235A (ja) | 2011-04-12 | 2012-11-12 | Hitachi High-Technologies Corp | プラズマ処理装置 |
| US9059678B2 (en) | 2011-04-28 | 2015-06-16 | Lam Research Corporation | TCCT match circuit for plasma etch chambers |
| US20120280429A1 (en) | 2011-05-02 | 2012-11-08 | Gt Solar, Inc. | Apparatus and method for producing a multicrystalline material having large grain sizes |
| US8746284B2 (en) | 2011-05-11 | 2014-06-10 | Intermolecular, Inc. | Apparatus and method for multiple symmetrical divisional gas distribution |
| CN105977126B (zh) | 2011-05-31 | 2018-12-07 | 应用材料公司 | 用于等离子体蚀刻腔室的孔部件 |
| KR101909439B1 (ko) | 2011-06-06 | 2018-10-18 | 지티에이티 코포레이션 | 결정성장장치용 히이터 어셈블리 |
| US10364496B2 (en) | 2011-06-27 | 2019-07-30 | Asm Ip Holding B.V. | Dual section module having shared and unshared mass flow controllers |
| JP6068462B2 (ja) | 2011-06-30 | 2017-01-25 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 高速ガス交換、高速ガス切換、及びプログラミング可能なガス送出のための方法及び装置 |
| JP5377587B2 (ja) | 2011-07-06 | 2013-12-25 | 東京エレクトロン株式会社 | アンテナ、プラズマ処理装置及びプラズマ処理方法 |
| JP5739261B2 (ja) | 2011-07-28 | 2015-06-24 | 株式会社堀場エステック | ガス供給システム |
| US8728239B2 (en) | 2011-07-29 | 2014-05-20 | Asm America, Inc. | Methods and apparatus for a gas panel with constant gas flow |
| JP5948026B2 (ja) | 2011-08-17 | 2016-07-06 | 東京エレクトロン株式会社 | 半導体製造装置及び処理方法 |
| US20130045605A1 (en) | 2011-08-18 | 2013-02-21 | Applied Materials, Inc. | Dry-etch for silicon-and-nitrogen-containing films |
| US8849466B2 (en) | 2011-10-04 | 2014-09-30 | Mks Instruments, Inc. | Method of and apparatus for multiple channel flow ratio controller system |
| US20130104996A1 (en) | 2011-10-26 | 2013-05-02 | Applied Materials, Inc. | Method for balancing gas flow supplying multiple cvd reactors |
| US8933628B2 (en) | 2011-10-28 | 2015-01-13 | Applied Materials, Inc. | Inductively coupled plasma source with phase control |
| US8671733B2 (en) | 2011-12-13 | 2014-03-18 | Intermolecular, Inc. | Calibration procedure considering gas solubility |
| US10825708B2 (en) | 2011-12-15 | 2020-11-03 | Applied Materials, Inc. | Process kit components for use with an extended and independent RF powered cathode substrate for extreme edge tunability |
| US8900469B2 (en) | 2011-12-19 | 2014-12-02 | Applied Materials, Inc. | Etch rate detection for anti-reflective coating layer and absorber layer etching |
| JP5973731B2 (ja) | 2012-01-13 | 2016-08-23 | 東京エレクトロン株式会社 | プラズマ処理装置及びヒータの温度制御方法 |
| US20140311676A1 (en) | 2012-01-17 | 2014-10-23 | Tokyo Electron Limited | Substrate mounting table and plasma treatment device |
| JP5905735B2 (ja) | 2012-02-21 | 2016-04-20 | 東京エレクトロン株式会社 | 基板処理装置、基板処理方法及び基板温度の設定可能帯域の変更方法 |
| CN104380101B (zh) | 2012-02-22 | 2016-10-19 | 安捷伦科技有限公司 | 质量流量控制器以及在不关闭质量流量控制器的情况下自动调零流量传感器的方法 |
| JP5881467B2 (ja) | 2012-02-29 | 2016-03-09 | 株式会社フジキン | ガス分流供給装置及びこれを用いたガス分流供給方法 |
| CN102610476B (zh) | 2012-03-12 | 2015-05-27 | 中微半导体设备(上海)有限公司 | 一种静电吸盘 |
| US20130255784A1 (en) | 2012-03-30 | 2013-10-03 | Applied Materials, Inc. | Gas delivery systems and methods of use thereof |
| US9682398B2 (en) | 2012-03-30 | 2017-06-20 | Applied Materials, Inc. | Substrate processing system having susceptorless substrate support with enhanced substrate heating control |
| US9301383B2 (en) | 2012-03-30 | 2016-03-29 | Tokyo Electron Limited | Low electron temperature, edge-density enhanced, surface wave plasma (SWP) processing method and apparatus |
| CN104137249B (zh) | 2012-04-25 | 2017-11-14 | 应用材料公司 | 晶片边缘的测量和控制 |
| US9948214B2 (en) | 2012-04-26 | 2018-04-17 | Applied Materials, Inc. | High temperature electrostatic chuck with real-time heat zone regulating capability |
| KR101390422B1 (ko) | 2012-05-07 | 2014-04-29 | 주식회사 제우스 | Lcd 글라스 기판용 오븐챔버의 리프트 핀 유닛 |
| KR101974420B1 (ko) | 2012-06-08 | 2019-05-02 | 세메스 주식회사 | 기판처리장치 및 방법 |
| KR101974422B1 (ko) | 2012-06-27 | 2019-05-02 | 세메스 주식회사 | 기판처리장치 및 방법 |
| US9243325B2 (en) | 2012-07-18 | 2016-01-26 | Rohm And Haas Electronic Materials Llc | Vapor delivery device, methods of manufacture and methods of use thereof |
| US9184030B2 (en) | 2012-07-19 | 2015-11-10 | Lam Research Corporation | Edge exclusion control with adjustable plasma exclusion zone ring |
| US9023734B2 (en) | 2012-09-18 | 2015-05-05 | Applied Materials, Inc. | Radical-component oxide etch |
| US8865602B2 (en) | 2012-09-28 | 2014-10-21 | Applied Materials, Inc. | Edge ring lip |
| US9355839B2 (en) | 2012-10-23 | 2016-05-31 | Lam Research Corporation | Sub-saturated atomic layer deposition and conformal film deposition |
| JP2014084523A (ja) | 2012-10-26 | 2014-05-12 | Sumitomo Heavy Ind Ltd | 成膜装置 |
| JP5616416B2 (ja) | 2012-11-02 | 2014-10-29 | 株式会社フジキン | 集積型ガス供給装置 |
| US8969212B2 (en) | 2012-11-20 | 2015-03-03 | Applied Materials, Inc. | Dry-etch selectivity |
| US20140144471A1 (en) | 2012-11-28 | 2014-05-29 | Intermolecular, Inc. | Contamination Control, Rinsing, and Purging Methods to Extend the Life of Components within Combinatorial Processing Systems |
| US9090972B2 (en) | 2012-12-31 | 2015-07-28 | Lam Research Corporation | Gas supply systems for substrate processing chambers and methods therefor |
| US9997381B2 (en) | 2013-02-18 | 2018-06-12 | Lam Research Corporation | Hybrid edge ring for plasma wafer processing |
| US9362130B2 (en) | 2013-03-01 | 2016-06-07 | Applied Materials, Inc. | Enhanced etching processes using remote plasma sources |
| CN106304597B (zh) | 2013-03-12 | 2019-05-10 | 应用材料公司 | 具有方位角与径向分布控制的多区域气体注入组件 |
| US9337002B2 (en) | 2013-03-12 | 2016-05-10 | Lam Research Corporation | Corrosion resistant aluminum coating on plasma chamber components |
| US20140273460A1 (en) | 2013-03-13 | 2014-09-18 | Applied Materials, Inc. | Passive control for through silicon via tilt in icp chamber |
| US9472443B2 (en) | 2013-03-14 | 2016-10-18 | Applied Materials, Inc. | Selectively groundable cover ring for substrate process chambers |
| US10105883B2 (en) | 2013-03-15 | 2018-10-23 | Nanonex Corporation | Imprint lithography system and method for manufacturing |
| US20140271097A1 (en) | 2013-03-15 | 2014-09-18 | Applied Materials, Inc. | Processing systems and methods for halide scavenging |
| US9425077B2 (en) | 2013-03-15 | 2016-08-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor apparatus with transportable edge ring for substrate transport |
| US9224583B2 (en) | 2013-03-15 | 2015-12-29 | Lam Research Corporation | System and method for heating plasma exposed surfaces |
| KR20140132542A (ko) | 2013-05-08 | 2014-11-18 | 주식회사 미코 | 세라믹 히터 및 이의 제조 방법 |
| JP6853038B2 (ja) | 2013-06-26 | 2021-03-31 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | Icpプラズマ処理チャンバ内における高収率・基板最端部欠陥低減のための単一リング設計 |
| FR3008266B1 (fr) | 2013-07-03 | 2015-08-07 | Commissariat Energie Atomique | Procede et systeme d'acces multiple avec multiplexage frequentiel de requetes d'autorisation d'envoi de donnees |
| US20150010381A1 (en) | 2013-07-08 | 2015-01-08 | United Microelectronics Corp. | Wafer processing chamber and method for transferring wafer in the same |
| US9147581B2 (en) | 2013-07-11 | 2015-09-29 | Lam Research Corporation | Dual chamber plasma etcher with ion accelerator |
| CN107516626B (zh) | 2013-07-19 | 2021-03-26 | 朗姆研究公司 | 用于原位晶片边缘和背侧等离子体清洁的系统和方法 |
| US20150020848A1 (en) | 2013-07-19 | 2015-01-22 | Lam Research Corporation | Systems and Methods for In-Situ Wafer Edge and Backside Plasma Cleaning |
| US9816506B2 (en) | 2013-07-31 | 2017-11-14 | Trane International Inc. | Intermediate oil separator for improved performance in a scroll compressor |
| US9123661B2 (en) | 2013-08-07 | 2015-09-01 | Lam Research Corporation | Silicon containing confinement ring for plasma processing apparatus and method of forming thereof |
| JP6193679B2 (ja) | 2013-08-30 | 2017-09-06 | 株式会社フジキン | ガス分流供給装置及びガス分流供給方法 |
| US10937634B2 (en) | 2013-10-04 | 2021-03-02 | Lam Research Corporation | Tunable upper plasma-exclusion-zone ring for a bevel etcher |
| JP2015109249A (ja) | 2013-10-22 | 2015-06-11 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| CN103730318B (zh) | 2013-11-15 | 2016-04-06 | 中微半导体设备(上海)有限公司 | 一种晶圆边缘保护环及减少晶圆边缘颗粒的方法 |
| US10804081B2 (en) | 2013-12-20 | 2020-10-13 | Lam Research Corporation | Edge ring dimensioned to extend lifetime of elastomer seal in a plasma processing chamber |
| WO2015099892A1 (en) | 2013-12-23 | 2015-07-02 | Applied Materials, Inc. | Extreme edge and skew control in icp plasma reactor |
| US20150184287A1 (en) | 2013-12-26 | 2015-07-02 | Intermolecular, Inc. | Systems and Methods for Parallel Combinatorial Vapor Deposition Processing |
| CN104752141B (zh) | 2013-12-31 | 2017-02-08 | 中微半导体设备(上海)有限公司 | 一种等离子体处理装置及其运行方法 |
| CN104851832B (zh) | 2014-02-18 | 2018-01-19 | 北京北方华创微电子装备有限公司 | 一种固定装置、反应腔室及等离子体加工设备 |
| CN104862660B (zh) | 2014-02-24 | 2017-10-13 | 北京北方华创微电子装备有限公司 | 承载装置及等离子体加工设备 |
| JP6218650B2 (ja) | 2014-03-11 | 2017-10-25 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| US9580360B2 (en) | 2014-04-07 | 2017-02-28 | Lam Research Corporation | Monolithic ceramic component of gas delivery system and method of making and use thereof |
| JP6204869B2 (ja) | 2014-04-09 | 2017-09-27 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
| US20150340209A1 (en) | 2014-05-20 | 2015-11-26 | Micron Technology, Inc. | Focus ring replacement method for a plasma reactor, and associated systems and methods |
| US9026244B1 (en) | 2014-05-22 | 2015-05-05 | Applied Materials, Inc. | Presence sensing and position correction for wafer on a carrier ring |
| US9034771B1 (en) | 2014-05-23 | 2015-05-19 | Applied Materials, Inc. | Cooling pedestal for dicing tape thermal management during plasma dicing |
| JP6442296B2 (ja) | 2014-06-24 | 2018-12-19 | 東京エレクトロン株式会社 | 載置台及びプラズマ処理装置 |
| CN105336561B (zh) | 2014-07-18 | 2017-07-21 | 中微半导体设备(上海)有限公司 | 等离子体刻蚀装置 |
| KR20160015510A (ko) | 2014-07-30 | 2016-02-15 | 삼성전자주식회사 | 정전척 어셈블리, 이를 구비하는 반도체 제조장치, 및 이를 이용한 플라즈마 처리방법 |
| JP2016046451A (ja) | 2014-08-26 | 2016-04-04 | 株式会社アルバック | 基板処理装置及び基板処理方法 |
| JP6789932B2 (ja) | 2014-10-17 | 2020-11-25 | ラム リサーチ コーポレーションLam Research Corporation | 調整可能ガスフロー制御のためのガス分離器を含むガス供給配送配置 |
| US10242848B2 (en) | 2014-12-12 | 2019-03-26 | Lam Research Corporation | Carrier ring structure and chamber systems including the same |
| US20160181116A1 (en) | 2014-12-18 | 2016-06-23 | Lam Research Corporation | Selective nitride etch |
| US9865437B2 (en) | 2014-12-30 | 2018-01-09 | Applied Materials, Inc. | High conductance process kit |
| KR102425455B1 (ko) | 2015-01-09 | 2022-07-27 | 어플라이드 머티어리얼스, 인코포레이티드 | 기판 이송 메커니즘들 |
| US11605546B2 (en) | 2015-01-16 | 2023-03-14 | Lam Research Corporation | Moveable edge coupling ring for edge process control during semiconductor wafer processing |
| US20170263478A1 (en) | 2015-01-16 | 2017-09-14 | Lam Research Corporation | Detection System for Tunable/Replaceable Edge Coupling Ring |
| US10658222B2 (en) | 2015-01-16 | 2020-05-19 | Lam Research Corporation | Moveable edge coupling ring for edge process control during semiconductor wafer processing |
| TW201634738A (zh) | 2015-01-22 | 2016-10-01 | 應用材料股份有限公司 | 用於在空間上分離之原子層沉積腔室的經改良注射器 |
| US9911620B2 (en) | 2015-02-23 | 2018-03-06 | Lam Research Corporation | Method for achieving ultra-high selectivity while etching silicon nitride |
| US9966270B2 (en) | 2015-03-31 | 2018-05-08 | Lam Research Corporation | Gas reaction trajectory control through tunable plasma dissociation for wafer by-product distribution and etch feature profile uniformity |
| US10903055B2 (en) | 2015-04-17 | 2021-01-26 | Applied Materials, Inc. | Edge ring for bevel polymer reduction |
| US10438795B2 (en) | 2015-06-22 | 2019-10-08 | Veeco Instruments, Inc. | Self-centering wafer carrier system for chemical vapor deposition |
| US10957561B2 (en) | 2015-07-30 | 2021-03-23 | Lam Research Corporation | Gas delivery system |
| US10153136B2 (en) | 2015-08-04 | 2018-12-11 | Lam Research Corporation | Hollow RF feed with coaxial DC power feed |
| US9499289B1 (en) | 2015-08-14 | 2016-11-22 | Extreme Packaging Machinery, Inc. | Film edge sealing device |
| US10854492B2 (en) | 2015-08-18 | 2020-12-01 | Lam Research Corporation | Edge ring assembly for improving feature profile tilting at extreme edge of wafer |
| KR101805552B1 (ko) | 2015-08-31 | 2017-12-08 | 엘지디스플레이 주식회사 | 유기발광 표시장치 |
| US10879041B2 (en) | 2015-09-04 | 2020-12-29 | Applied Materials, Inc. | Method and apparatus of achieving high input impedance without using ferrite materials for RF filter applications in plasma chambers |
| US9837286B2 (en) | 2015-09-04 | 2017-12-05 | Lam Research Corporation | Systems and methods for selectively etching tungsten in a downstream reactor |
| JP6541565B2 (ja) | 2015-09-25 | 2019-07-10 | 東京エレクトロン株式会社 | 載置台及びプラズマ処理装置 |
| US10044338B2 (en) | 2015-10-15 | 2018-08-07 | Lam Research Corporation | Mutually induced filters |
| US10192751B2 (en) | 2015-10-15 | 2019-01-29 | Lam Research Corporation | Systems and methods for ultrahigh selective nitride etch |
| US10124492B2 (en) | 2015-10-22 | 2018-11-13 | Lam Research Corporation | Automated replacement of consumable parts using end effectors interfacing with plasma processing system |
| US20170115657A1 (en) | 2015-10-22 | 2017-04-27 | Lam Research Corporation | Systems for Removing and Replacing Consumable Parts from a Semiconductor Process Module in Situ |
| TWI725067B (zh) | 2015-10-28 | 2021-04-21 | 美商應用材料股份有限公司 | 可旋轉靜電夾盤 |
| US10985078B2 (en) | 2015-11-06 | 2021-04-20 | Lam Research Corporation | Sensor and adjuster for a consumable |
| US10825659B2 (en) | 2016-01-07 | 2020-11-03 | Lam Research Corporation | Substrate processing chamber including multiple gas injection points and dual injector |
| CN116110846A (zh) | 2016-01-26 | 2023-05-12 | 应用材料公司 | 晶片边缘环升降解决方案 |
| CN108369922B (zh) * | 2016-01-26 | 2023-03-21 | 应用材料公司 | 晶片边缘环升降解决方案 |
| JP6384679B2 (ja) | 2016-01-27 | 2018-09-05 | Jfeスチール株式会社 | 熱延鋼板の製造方法 |
| DE102016202071A1 (de) | 2016-02-11 | 2017-08-17 | Siemens Aktiengesellschaft | Elektrischer Leiter für eine elektrische Maschine mit erhöhtem Leistungsgewicht und elektrische Komponente für die elektrische Maschine |
| US10699878B2 (en) | 2016-02-12 | 2020-06-30 | Lam Research Corporation | Chamber member of a plasma source and pedestal with radially outward positioned lift pins for translation of a substrate c-ring |
| US10147588B2 (en) | 2016-02-12 | 2018-12-04 | Lam Research Corporation | System and method for increasing electron density levels in a plasma of a substrate processing system |
| US10651015B2 (en) | 2016-02-12 | 2020-05-12 | Lam Research Corporation | Variable depth edge ring for etch uniformity control |
| US10438833B2 (en) | 2016-02-16 | 2019-10-08 | Lam Research Corporation | Wafer lift ring system for wafer transfer |
| CN107093569B (zh) | 2016-02-18 | 2019-07-05 | 北京北方华创微电子装备有限公司 | 一种晶片定位装置及反应腔室 |
| JP7098273B2 (ja) * | 2016-03-04 | 2022-07-11 | アプライド マテリアルズ インコーポレイテッド | ユニバーサルプロセスキット |
| JP6896754B2 (ja) | 2016-03-05 | 2021-06-30 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 物理的気相堆積プロセスにおけるイオン分画を制御するための方法および装置 |
| US20170278679A1 (en) | 2016-03-24 | 2017-09-28 | Lam Research Corporation | Method and apparatus for controlling process within wafer uniformity |
| US11011353B2 (en) | 2016-03-29 | 2021-05-18 | Lam Research Corporation | Systems and methods for performing edge ring characterization |
| US10312121B2 (en) | 2016-03-29 | 2019-06-04 | Lam Research Corporation | Systems and methods for aligning measurement device in substrate processing systems |
| WO2017196540A1 (en) | 2016-05-13 | 2017-11-16 | Applied Materials, Inc. | Sensor based auto-calibration wafer |
| DE102016212780A1 (de) | 2016-07-13 | 2018-01-18 | Siltronic Ag | Vorrichtung zur Handhabung einer Halbleiterscheibe in einem Epitaxie-Reaktor und Verfahren zur Herstellung einer Halbleiterscheibe mit epitaktischer Schicht |
| JP6635888B2 (ja) | 2016-07-14 | 2020-01-29 | 東京エレクトロン株式会社 | プラズマ処理システム |
| US9698042B1 (en) | 2016-07-22 | 2017-07-04 | Lam Research Corporation | Wafer centering in pocket to improve azimuthal thickness uniformity at wafer edge |
| US10410832B2 (en) | 2016-08-19 | 2019-09-10 | Lam Research Corporation | Control of on-wafer CD uniformity with movable edge ring and gas injection adjustment |
| US10921251B2 (en) | 2016-08-22 | 2021-02-16 | Applied Materials, Inc. | Chamber component part wear indicator and a system for detecting part wear |
| US10541168B2 (en) | 2016-11-14 | 2020-01-21 | Lam Research Corporation | Edge ring centering method using ring dynamic alignment data |
| JP6812224B2 (ja) | 2016-12-08 | 2021-01-13 | 東京エレクトロン株式会社 | 基板処理装置及び載置台 |
| US10910195B2 (en) | 2017-01-05 | 2021-02-02 | Lam Research Corporation | Substrate support with improved process uniformity |
| US10553404B2 (en) | 2017-02-01 | 2020-02-04 | Applied Materials, Inc. | Adjustable extended electrode for edge uniformity control |
| US11404249B2 (en) | 2017-03-22 | 2022-08-02 | Tokyo Electron Limited | Substrate processing apparatus |
| KR102591660B1 (ko) | 2017-07-24 | 2023-10-19 | 램 리써치 코포레이션 | 이동가능한 에지 링 설계들 |
| WO2019103722A1 (en) | 2017-11-21 | 2019-05-31 | Lam Research Corporation | Bottom and middle edge rings |
| TWI722257B (zh) | 2017-11-21 | 2021-03-21 | 美商蘭姆研究公司 | 底部和中間邊緣環 |
| CN120221492A (zh) | 2017-12-05 | 2025-06-27 | 朗姆研究公司 | 用于边缘环损耗补偿的系统和方法 |
| US11043400B2 (en) | 2017-12-21 | 2021-06-22 | Applied Materials, Inc. | Movable and removable process kit |
| US11387134B2 (en) | 2018-01-19 | 2022-07-12 | Applied Materials, Inc. | Process kit for a substrate support |
| CN111095523A (zh) * | 2018-01-22 | 2020-05-01 | 应用材料公司 | 利用经供电的边缘环的处理 |
| US10591934B2 (en) | 2018-03-09 | 2020-03-17 | Lam Research Corporation | Mass flow controller for substrate processing |
| JP7061918B2 (ja) | 2018-04-23 | 2022-05-02 | 東京エレクトロン株式会社 | プラズマエッチング方法及びプラズマ処理装置 |
| US11093605B2 (en) | 2018-06-28 | 2021-08-17 | Cisco Technology, Inc. | Monitoring real-time processor instruction stream execution |
| US10760944B2 (en) | 2018-08-07 | 2020-09-01 | Lam Research Corporation | Hybrid flow metrology for improved chamber matching |
| CN118398464A (zh) | 2018-08-13 | 2024-07-26 | 朗姆研究公司 | 可更换和/或可折叠的用于等离子鞘调整的并入边缘环定位和定心功能的边缘环组件 |
| JP7115942B2 (ja) | 2018-09-06 | 2022-08-09 | 東京エレクトロン株式会社 | 載置台、基板処理装置、エッジリング及びエッジリングの搬送方法 |
| WO2020180656A1 (en) | 2019-03-06 | 2020-09-10 | Lam Research Corporation | Measurement system to measure a thickness of an adjustable edge ring for a substrate processing system |
| JP2020155489A (ja) | 2019-03-18 | 2020-09-24 | キオクシア株式会社 | 半導体製造装置および半導体装置の製造方法 |
| US11018046B2 (en) | 2019-04-12 | 2021-05-25 | Samsung Electronics Co., Ltd. | Substrate processing apparatus including edge ring |
| TWM588883U (zh) | 2019-05-10 | 2020-01-01 | 美商蘭姆研究公司 | 半導體製程模組的中環 |
| US12142466B2 (en) | 2019-06-06 | 2024-11-12 | Lam Research Corporation | Automated transfer of edge ring requiring rotational alignment |
| JP2019195198A (ja) | 2019-06-12 | 2019-11-07 | 株式会社東芝 | 通信装置、通信方法、プログラムおよび通信システム |
| TWM602283U (zh) | 2019-08-05 | 2020-10-01 | 美商蘭姆研究公司 | 基板處理系統用之具有升降銷溝槽的邊緣環 |
| WO2021025934A1 (en) | 2019-08-05 | 2021-02-11 | Lam Research Corporation | Edge ring systems for substrate processing systems |
| KR20220044356A (ko) | 2019-08-14 | 2022-04-07 | 램 리써치 코포레이션 | 기판 프로세싱 시스템들을 위한 이동 가능한 에지 링들 |
| US11823937B2 (en) | 2019-08-19 | 2023-11-21 | Applied Materials, Inc. | Calibration of an aligner station of a processing system |
| JP2021040011A (ja) | 2019-09-02 | 2021-03-11 | キオクシア株式会社 | プラズマ処理装置 |
| US11443923B2 (en) | 2019-09-25 | 2022-09-13 | Taiwan Semiconductor Manufacturing Company Ltd. | Apparatus for fabricating a semiconductor structure and method of fabricating a semiconductor structure |
| KR102747645B1 (ko) | 2019-10-10 | 2024-12-27 | 삼성전자주식회사 | 정전 척 및 상기 정전 척을 포함하는 기판 처리 장치 |
| JP7715721B2 (ja) | 2020-02-19 | 2025-07-30 | ラム リサーチ コーポレーション | 半導体処理チャンバの構成要素を調整する方法 |
| US11766782B2 (en) | 2020-03-17 | 2023-09-26 | Applied Materials, Inc. | Calibration of an electronics processing system |
| CN115315775A (zh) | 2020-03-23 | 2022-11-08 | 朗姆研究公司 | 衬底处理系统中的中环腐蚀补偿 |
| TWI908803B (zh) | 2020-06-05 | 2025-12-21 | 日商東京威力科創股份有限公司 | 電漿處理裝置 |
| CN116349002A (zh) | 2020-10-05 | 2023-06-27 | 朗姆研究公司 | 用于等离子体处理系统的可移动边缘环 |
| CN212874484U (zh) | 2020-10-20 | 2021-04-02 | 深圳市诚金晖精密机械有限公司 | 一种程控电源盒的mos管多通道散热结构 |
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2021
- 2021-09-29 CN CN202180068527.6A patent/CN116349002A/zh active Pending
- 2021-09-29 JP JP2023521034A patent/JP7752172B2/ja active Active
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- 2021-09-29 US US18/029,708 patent/US12562350B2/en active Active
- 2021-09-29 EP EP21878249.8A patent/EP4226415A4/en active Pending
- 2021-09-29 KR KR1020237015468A patent/KR20230079226A/ko active Pending
- 2021-10-04 TW TW110136825A patent/TWI899341B/zh active
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Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001230239A (ja) | 2000-02-15 | 2001-08-24 | Tokyo Electron Ltd | 処理装置及び処理方法 |
| JP2005539397A (ja) | 2002-09-18 | 2005-12-22 | ラム リサーチ コーポレーション | プラズマ処理チャンバー内におけるエッジリング磨耗の補償のための方法および装置 |
| JP2012146742A (ja) | 2011-01-07 | 2012-08-02 | Tokyo Electron Ltd | フォーカスリング及び該フォーカスリングを備える基板処理装置 |
| JP2014232884A (ja) | 2014-07-29 | 2014-12-11 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法並びにこれを実施するためのプログラムを記憶する記憶媒体 |
| JP2018098187A (ja) | 2016-12-16 | 2018-06-21 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | エッジ均一性制御のための調整可能な延長電極 |
| JP2018160666A (ja) | 2017-03-22 | 2018-10-11 | 東京エレクトロン株式会社 | 基板処理装置 |
| US20180358211A1 (en) | 2017-06-09 | 2018-12-13 | Semes Co., Ltd. | Substrate treating apparatus |
| JP2019208023A (ja) | 2018-05-28 | 2019-12-05 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 端部均一性制御のための可調整チューニングリングを有するプロセスキット |
| JP2020115541A (ja) | 2019-01-17 | 2020-07-30 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | ウェハエッジプラズマシース調整機能を備える半導体プラズマ処理装置 |
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| Publication number | Publication date |
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| JP2025186503A (ja) | 2025-12-23 |
| US20230369026A1 (en) | 2023-11-16 |
| US12562350B2 (en) | 2026-02-24 |
| WO2022076227A1 (en) | 2022-04-14 |
| KR20230079226A (ko) | 2023-06-05 |
| JP2023546350A (ja) | 2023-11-02 |
| EP4226415A4 (en) | 2024-11-13 |
| TWI899341B (zh) | 2025-10-01 |
| TW202234572A (zh) | 2022-09-01 |
| EP4226415A1 (en) | 2023-08-16 |
| CN116349002A (zh) | 2023-06-27 |
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