JP2012146742A - フォーカスリング及び該フォーカスリングを備える基板処理装置 - Google Patents
フォーカスリング及び該フォーカスリングを備える基板処理装置 Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims description 121
- 239000007789 gas Substances 0.000 claims description 53
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 30
- 239000010453 quartz Substances 0.000 claims description 28
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 10
- 229910001882 dioxygen Inorganic materials 0.000 claims description 10
- 239000011261 inert gas Substances 0.000 claims description 4
- 238000001020 plasma etching Methods 0.000 abstract description 14
- 230000004048 modification Effects 0.000 description 16
- 238000012986 modification Methods 0.000 description 16
- 239000001301 oxygen Substances 0.000 description 16
- 229910052760 oxygen Inorganic materials 0.000 description 16
- 238000000034 method Methods 0.000 description 15
- 230000008569 process Effects 0.000 description 13
- 239000007795 chemical reaction product Substances 0.000 description 11
- 238000001816 cooling Methods 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 230000002093 peripheral effect Effects 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 238000000354 decomposition reaction Methods 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- 229910010271 silicon carbide Inorganic materials 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 2
- 238000005192 partition Methods 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000005513 bias potential Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000005108 dry cleaning Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- -1 for example Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
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- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32642—Focus rings
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- H01J37/32—Gas-filled discharge tubes
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- H01L21/67011—Apparatus for manufacture or treatment
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- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B9/00—Cleaning hollow articles by methods or apparatus specially adapted thereto
- B08B9/08—Cleaning containers, e.g. tanks
- B08B9/20—Cleaning containers, e.g. tanks by using apparatus into or on to which containers, e.g. bottles, jars, cans are brought
- B08B9/28—Cleaning containers, e.g. tanks by using apparatus into or on to which containers, e.g. bottles, jars, cans are brought the apparatus cleaning by splash, spray, or jet application, with or without soaking
- B08B9/283—Cleaning containers, e.g. tanks by using apparatus into or on to which containers, e.g. bottles, jars, cans are brought the apparatus cleaning by splash, spray, or jet application, with or without soaking by gas jets
- B08B9/286—Cleaning containers, e.g. tanks by using apparatus into or on to which containers, e.g. bottles, jars, cans are brought the apparatus cleaning by splash, spray, or jet application, with or without soaking by gas jets the gas being ionized
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- C09K13/00—Etching, surface-brightening or pickling compositions
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32366—Localised processing
- H01J37/32385—Treating the edge of the workpieces
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
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Abstract
【解決手段】プラズマエッチング装置の処理室15内に配置されたウエハWの周縁を囲む内側フォーカスリング25a及び外側フォーカスリング25bからフォーカスリング25を構成し、内側フォーカスリング25aはウエハWに隣接して配置され且つ冷却され、外側フォーカスリング25bは内側フォーカスリング25aを囲み且つ冷却されず、更に、ブロック部材25cが、内側フォーカスリング25a及び外側フォーカスリング25bの間に配される。
【選択図】図2
Description
10 基板処理装置
12 サセプタ
25 フォーカスリング
25a 内側フォーカスリング
25b 外側フォーカスリング
25c,25d ブロック部材
25e フランジ部
35 ガス供給口
36,38 レーザ光
37 レーザ光ガイド部材
39,40 プッシャーピン
41 接地部材
42 接地電極
43 正電位電極
44 電磁石
Claims (14)
- 基板処理装置の処理室内に配置された基板の周縁を囲むフォーカスリングであって、
前記基板に隣接して配置され且つ冷却される内側フォーカスリングと、
該内側フォーカスリングを囲み且つ冷却されない外側フォーカスリングと、
前記内側フォーカスリング及び前記外側フォーカスリングの隙間に配された石英部材とを有することを特徴とするフォーカスリング。 - 前記石英部材は前記処理室内におけるプラズマが生じる処理空間に晒されることを特徴とする請求項1記載のフォーカスリング。
- 前記処理室内には少なくとも前記基板及び前記内側フォーカスリングを載置する載置台が配置され、
前記石英部材は前記内側フォーカスリング及び前記載置台の間に介在することを特徴とする請求項1又は2記載のフォーカスリング。 - 基板を収容する処理室と、前記処理室内に配置された基板の周縁を囲むフォーカスリングとを備える基板処理装置であって、
前記フォーカスリングは、前記基板に隣接して配置され且つ冷却される内側フォーカスリングと、該内側フォーカスリングを囲み且つ冷却されない外側フォーカスリングと、
前記内側フォーカスリング及び前記外側フォーカスリングの隙間に配された石英部材とを有することを特徴とする基板処理装置。 - 基板を収容する処理室と、前記処理室内に配置された基板の周縁を囲むフォーカスリングと、前記基板及び前記フォーカスリングを載置する載置台とを備える基板処理装置であって、
前記フォーカスリングは、前記基板に隣接して配置され且つ冷却される内側フォーカスリングと、該内側フォーカスリングを囲み且つ冷却されない外側フォーカスリングとを有し、
前記載置台は冷却されて前記内側フォーカスリングよりも低温となり、
前記内側フォーカスリング及び前記載置台の隙間には石英部材が配されることを特徴とする基板処理装置。 - 前記石英部材は、前記載置台において前記内側フォーカスリングが載置される載置面と、前記内側フォーカスリングとの間に介在することを特徴とする請求項5記載の基板処理装置。
- 前記石英部材は、延伸されて前記内側フォーカスリング及び前記外側フォーカスリングの隙間に配されることを特徴とする請求項6記載の基板処理装置。
- 基板を収容する処理室と、前記処理室内に配置された基板の周縁を囲むフォーカスリングと、前記基板及び前記フォーカスリングを載置する載置台と、前記フォーカスリング及び前記載置台の隙間にガスを供給するガス供給装置とを備える基板処理装置であって、
前記フォーカスリングは、前記基板に隣接して配置され且つ冷却される内側フォーカスリングと、該内側フォーカスリングを囲み且つ冷却されない外側フォーカスリングとを有し、
前記ガス供給装置は、前記内側フォーカスリング及び前記外側フォーカスリングの隙間、並びに前記内側フォーカスリング及び前記載置台の隙間の少なくとも1つにガスを供給することを特徴とする基板処理装置。 - 前記ガス供給装置が供給するガスは酸素ガスであることを特徴とする請求項8記載の基板処理装置。
- 前記ガス供給装置が供給するガスは不活性ガスであることを特徴とする請求項8記載の基板処理装置。
- 前記ガス供給装置が供給するガスは処理ガスであることを特徴とする請求項8記載の基板処理装置。
- 基板処理装置の処理室内に配置された基板の周縁を囲むフォーカスリングであって、
前記基板に隣接して配置され且つ冷却される内側フォーカスリングと、
該内側フォーカスリングを囲み且つ冷却されない外側フォーカスリングとを備え、
前記内側フォーカスリングは、前記処理室内の処理空間に晒され、且つ前記外側フォーカスリングの一部を覆うように突出する薄板状の突出部を有することを特徴とするフォーカスリング。 - 前記内側フォーカスリングが有する突出部の厚さは1.7mm以上且つ2.0mm以下であることを特徴とする請求項12記載のフォーカスリング。
- 基板を収容する処理室と、前記処理室内に配置された基板の周縁を囲むフォーカスリングとを備える基板処理装置であって、
前記フォーカスリングは、前記基板に隣接して配置され且つ冷却される内側フォーカスリングと、該内側フォーカスリングを囲み且つ冷却されない外側フォーカスリングとを有し、
前記内側フォーカスリングは、前記処理室内の処理空間に晒され、且つ前記外側フォーカスリングの一部を覆うように突出する薄板状の突出部を有することを特徴とする基板処理装置。
Priority Applications (9)
Application Number | Priority Date | Filing Date | Title |
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JP2011002250A JP5690596B2 (ja) | 2011-01-07 | 2011-01-07 | フォーカスリング及び該フォーカスリングを備える基板処理装置 |
TW101100542A TWI553717B (zh) | 2011-01-07 | 2012-01-06 | A focusing ring and a substrate processing device provided with the focusing ring |
KR1020120001771A KR101933077B1 (ko) | 2011-01-07 | 2012-01-06 | 포커스 링 및 이 포커스 링을 구비하는 기판 처리 장치 |
US13/344,926 US20120176692A1 (en) | 2011-01-07 | 2012-01-06 | Focus ring and substrate processing apparatus having same |
CN201210003658.9A CN102592936B (zh) | 2011-01-07 | 2012-01-06 | 聚焦环和具有该聚焦环的基板处理装置 |
US15/935,275 US10777392B2 (en) | 2011-01-07 | 2018-03-26 | Substrate processing apparatus |
KR1020180166229A KR101989324B1 (ko) | 2011-01-07 | 2018-12-20 | 포커스 링 및 이 포커스 링을 구비하는 기판 처리 장치 |
US16/990,166 US11935727B2 (en) | 2011-01-07 | 2020-08-11 | Substrate processing method |
US18/442,594 US20240186122A1 (en) | 2011-01-07 | 2024-02-15 | Substrate processing apparatus |
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Also Published As
Publication number | Publication date |
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TWI553717B (zh) | 2016-10-11 |
KR101933077B1 (ko) | 2018-12-27 |
CN102592936A (zh) | 2012-07-18 |
US20120176692A1 (en) | 2012-07-12 |
JP5690596B2 (ja) | 2015-03-25 |
KR101989324B1 (ko) | 2019-06-14 |
TW201246327A (en) | 2012-11-16 |
KR20120080544A (ko) | 2012-07-17 |
US11935727B2 (en) | 2024-03-19 |
US20240186122A1 (en) | 2024-06-06 |
KR20190002384A (ko) | 2019-01-08 |
US20200373131A1 (en) | 2020-11-26 |
CN102592936B (zh) | 2015-01-21 |
US20180218884A1 (en) | 2018-08-02 |
US10777392B2 (en) | 2020-09-15 |
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