US20120176692A1 - Focus ring and substrate processing apparatus having same - Google Patents

Focus ring and substrate processing apparatus having same Download PDF

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Publication number
US20120176692A1
US20120176692A1 US13/344,926 US201213344926A US2012176692A1 US 20120176692 A1 US20120176692 A1 US 20120176692A1 US 201213344926 A US201213344926 A US 201213344926A US 2012176692 A1 US2012176692 A1 US 2012176692A1
Authority
US
United States
Prior art keywords
focus ring
substrate
gap
inner focus
processing apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US13/344,926
Other languages
English (en)
Inventor
Jun Yamawaku
Chishio Koshimizu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to US13/344,926 priority Critical patent/US20120176692A1/en
Assigned to TOKYO ELECTRON LIMITED reassignment TOKYO ELECTRON LIMITED ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: KOSHIMIZU, CHISHIO, YAMAWAKU, JUN
Publication of US20120176692A1 publication Critical patent/US20120176692A1/en
Priority to US15/935,275 priority patent/US10777392B2/en
Priority to US16/990,166 priority patent/US11935727B2/en
Abandoned legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B9/00—Cleaning hollow articles by methods or apparatus specially adapted thereto 
    • B08B9/08—Cleaning containers, e.g. tanks
    • B08B9/20—Cleaning containers, e.g. tanks by using apparatus into or on to which containers, e.g. bottles, jars, cans are brought
    • B08B9/28—Cleaning containers, e.g. tanks by using apparatus into or on to which containers, e.g. bottles, jars, cans are brought the apparatus cleaning by splash, spray, or jet application, with or without soaking
    • B08B9/283—Cleaning containers, e.g. tanks by using apparatus into or on to which containers, e.g. bottles, jars, cans are brought the apparatus cleaning by splash, spray, or jet application, with or without soaking by gas jets
    • B08B9/286—Cleaning containers, e.g. tanks by using apparatus into or on to which containers, e.g. bottles, jars, cans are brought the apparatus cleaning by splash, spray, or jet application, with or without soaking by gas jets the gas being ionized
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32366—Localised processing
    • H01J37/32385—Treating the edge of the workpieces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
US13/344,926 2011-01-07 2012-01-06 Focus ring and substrate processing apparatus having same Abandoned US20120176692A1 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US13/344,926 US20120176692A1 (en) 2011-01-07 2012-01-06 Focus ring and substrate processing apparatus having same
US15/935,275 US10777392B2 (en) 2011-01-07 2018-03-26 Substrate processing apparatus
US16/990,166 US11935727B2 (en) 2011-01-07 2020-08-11 Substrate processing method

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2011002250A JP5690596B2 (ja) 2011-01-07 2011-01-07 フォーカスリング及び該フォーカスリングを備える基板処理装置
JP2011-002250 2011-01-07
US201161435086P 2011-01-21 2011-01-21
US13/344,926 US20120176692A1 (en) 2011-01-07 2012-01-06 Focus ring and substrate processing apparatus having same

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US15/935,275 Continuation US10777392B2 (en) 2011-01-07 2018-03-26 Substrate processing apparatus

Publications (1)

Publication Number Publication Date
US20120176692A1 true US20120176692A1 (en) 2012-07-12

Family

ID=46455042

Family Applications (3)

Application Number Title Priority Date Filing Date
US13/344,926 Abandoned US20120176692A1 (en) 2011-01-07 2012-01-06 Focus ring and substrate processing apparatus having same
US15/935,275 Active 2032-03-21 US10777392B2 (en) 2011-01-07 2018-03-26 Substrate processing apparatus
US16/990,166 Active 2034-04-02 US11935727B2 (en) 2011-01-07 2020-08-11 Substrate processing method

Family Applications After (2)

Application Number Title Priority Date Filing Date
US15/935,275 Active 2032-03-21 US10777392B2 (en) 2011-01-07 2018-03-26 Substrate processing apparatus
US16/990,166 Active 2034-04-02 US11935727B2 (en) 2011-01-07 2020-08-11 Substrate processing method

Country Status (5)

Country Link
US (3) US20120176692A1 (ja)
JP (1) JP5690596B2 (ja)
KR (2) KR101933077B1 (ja)
CN (1) CN102592936B (ja)
TW (1) TWI553717B (ja)

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US20070000614A1 (en) * 2003-03-21 2007-01-04 Tokyo Electron Limited Method and apparatus for reducing substrate backside deposition during processing
US20120247954A1 (en) * 2011-03-29 2012-10-04 Tokyo Electron Limited Plasma processing apparatus
US20150122422A1 (en) * 2013-11-05 2015-05-07 Tokyo Electron Limited Thermally conductive silicone sheet, manufacturing method thereof, and plasma processing apparatus using the same
JP2016201490A (ja) * 2015-04-13 2016-12-01 トヨタ自動車株式会社 プラズマ処理装置
US20160351378A1 (en) * 2015-05-27 2016-12-01 Tokyo Electron Limited Plasma processing apparatus and focus ring
CN107093569A (zh) * 2016-02-18 2017-08-25 北京北方微电子基地设备工艺研究中心有限责任公司 一种晶片定位装置及反应腔室
US20170330734A1 (en) * 2016-05-12 2017-11-16 Samsung Electronics Co., Ltd. Plasma processing apparatus
US20180166259A1 (en) * 2016-12-08 2018-06-14 Tokyo Electron Limited Mounting table and plasma processing apparatus
US10283382B2 (en) 2016-12-23 2019-05-07 Samsung Electronics Co., Ltd. Plasma processing apparatus
US10600623B2 (en) 2018-05-28 2020-03-24 Applied Materials, Inc. Process kit with adjustable tuning ring for edge uniformity control
CN112185787A (zh) * 2019-07-04 2021-01-05 中微半导体设备(上海)股份有限公司 用于等离子体处理设备的射频电极组件和等离子体处理设备
CN112331545A (zh) * 2019-08-05 2021-02-05 铠侠股份有限公司 等离子体处理装置及等离子体处理方法
US20210043431A1 (en) * 2018-07-04 2021-02-11 Tokyo Electron Limited Plasma etching method and plasma etching device
US20210066055A1 (en) * 2019-09-04 2021-03-04 Semes Co., Ltd. Apparatus and method for treating substrate
US10991556B2 (en) 2017-02-01 2021-04-27 Applied Materials, Inc. Adjustable extended electrode for edge uniformity control
US20210142990A1 (en) * 2019-11-12 2021-05-13 Tokyo Electron Limited Plasma processing apparatus
US11043400B2 (en) * 2017-12-21 2021-06-22 Applied Materials, Inc. Movable and removable process kit
US11075105B2 (en) 2017-09-21 2021-07-27 Applied Materials, Inc. In-situ apparatus for semiconductor process module
US11101115B2 (en) 2019-04-19 2021-08-24 Applied Materials, Inc. Ring removal from processing chamber
US11289310B2 (en) 2018-11-21 2022-03-29 Applied Materials, Inc. Circuits for edge ring control in shaped DC pulsed plasma process device
US11393710B2 (en) * 2016-01-26 2022-07-19 Applied Materials, Inc. Wafer edge ring lifting solution
US20220230856A1 (en) * 2021-01-20 2022-07-21 Tokyo Electron Limited Plasma processing system and plasma processing method
US11501994B2 (en) 2019-03-22 2022-11-15 Samsung Electronics Co., Ltd. Substrate processing apparatus including edge ring
TWI792039B (zh) * 2019-08-14 2023-02-11 南韓商細美事有限公司 支撐單元、包括支撐單元的基板處理設備及基板處理方法
TWI809007B (zh) * 2017-11-29 2023-07-21 日商東京威力科創股份有限公司 半導體製造裝置用之對焦環及半導體製造裝置
US11935773B2 (en) 2018-06-14 2024-03-19 Applied Materials, Inc. Calibration jig and calibration method

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JP5690596B2 (ja) * 2011-01-07 2015-03-25 東京エレクトロン株式会社 フォーカスリング及び該フォーカスリングを備える基板処理装置
CN104726830B (zh) * 2013-12-24 2017-06-30 宁波江丰电子材料股份有限公司 聚焦环的矫正设备
JP6345030B2 (ja) * 2014-08-11 2018-06-20 東京エレクトロン株式会社 プラズマ処理装置及びフォーカスリング
CN105632861B (zh) * 2014-11-03 2017-10-17 中微半导体设备(上海)有限公司 电感耦合等离子体处理装置及等离子体刻蚀方法
CN108140606B (zh) * 2015-10-21 2022-05-24 住友大阪水泥股份有限公司 静电卡盘装置
JP6635888B2 (ja) * 2016-07-14 2020-01-29 東京エレクトロン株式会社 プラズマ処理システム
KR102063108B1 (ko) 2017-10-30 2020-01-08 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
CN111801787B (zh) * 2018-09-13 2023-10-03 日本碍子株式会社 晶圆载置装置
JP7228989B2 (ja) * 2018-11-05 2023-02-27 東京エレクトロン株式会社 載置台、エッジリングの位置決め方法及び基板処理装置
JP7145041B2 (ja) * 2018-11-08 2022-09-30 東京エレクトロン株式会社 基板支持器、プラズマ処理装置、及びフォーカスリング
JP6704147B2 (ja) * 2019-02-05 2020-06-03 パナソニックＩｐマネジメント株式会社 プラズマ処理方法、電子部品の製造方法およびプラズマ処理装置
CN111863578B (zh) * 2019-04-28 2023-06-16 中微半导体设备(上海)股份有限公司 一种等离子体处理设备
CN112599399A (zh) 2019-10-02 2021-04-02 东京毅力科创株式会社 等离子体处理装置
JP7361002B2 (ja) * 2019-10-02 2023-10-13 東京エレクトロン株式会社 プラズマ処理装置
US11764101B2 (en) * 2019-10-24 2023-09-19 ASM IP Holding, B.V. Susceptor for semiconductor substrate processing
JP2021141308A (ja) 2020-03-02 2021-09-16 東京エレクトロン株式会社 クリーニング方法およびプラズマ処理装置
US11804368B2 (en) 2020-03-02 2023-10-31 Tokyo Electron Limited Cleaning method and plasma processing apparatus
KR20210117625A (ko) 2020-03-19 2021-09-29 삼성전자주식회사 기판 처리 장치
CN114530361A (zh) * 2020-11-23 2022-05-24 中微半导体设备(上海)股份有限公司 下电极组件、等离子体处理装置和更换聚焦环的方法
KR102480912B1 (ko) * 2022-06-13 2022-12-22 김성규 SiC 포커스 링의 외경 가공용 연마 지그 조립체
KR102562892B1 (ko) * 2022-12-29 2023-08-03 주식회사 기가레인 정전척 유닛 및 그를 구비한 플라즈마 식각 장치

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TW201246327A (en) 2012-11-16
CN102592936B (zh) 2015-01-21
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US10777392B2 (en) 2020-09-15
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