JP7098273B2 - ユニバーサルプロセスキット - Google Patents
ユニバーサルプロセスキット Download PDFInfo
- Publication number
- JP7098273B2 JP7098273B2 JP2017023919A JP2017023919A JP7098273B2 JP 7098273 B2 JP7098273 B2 JP 7098273B2 JP 2017023919 A JP2017023919 A JP 2017023919A JP 2017023919 A JP2017023919 A JP 2017023919A JP 7098273 B2 JP7098273 B2 JP 7098273B2
- Authority
- JP
- Japan
- Prior art keywords
- ring
- inner ring
- thermal contact
- contact pad
- process kit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title claims description 54
- 239000000758 substrate Substances 0.000 claims description 78
- 239000004065 semiconductor Substances 0.000 claims description 26
- 239000000463 material Substances 0.000 claims description 13
- 239000004020 conductor Substances 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 239000010453 quartz Substances 0.000 claims description 6
- 230000000630 rising effect Effects 0.000 claims description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 2
- 239000002210 silicon-based material Substances 0.000 claims description 2
- 229920001296 polysiloxane Polymers 0.000 claims 2
- 150000002500 ions Chemical class 0.000 description 9
- 238000005530 etching Methods 0.000 description 8
- 239000007789 gas Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 239000003989 dielectric material Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 229910052755 nonmetal Inorganic materials 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 150000002843 nonmetals Chemical class 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 150000004760 silicates Chemical class 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229920005573 silicon-containing polymer Polymers 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
- H01J37/32495—Means for protecting the vessel against plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32642—Focus rings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
- H01J2237/3321—CVD [Chemical Vapor Deposition]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Drying Of Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Chemical Vapour Deposition (AREA)
- Plasma Technology (AREA)
Description
本開示の実施形態は、概して、半導体処理に関し、より具体的には、半導体処理チャンバ内で使用されるプロセスキットに関する。
様々な半導体製造プロセス(例えば、プラズマ援用エッチング又は化学気相堆積)は、プラズマ処理チャンバ内で実行される。基板支持体は、半導体処理チャンバ内の処理位置で基板を支持する。1以上の処理ガスを含むプラズマ領域が半導体処理チャンバ内で維持され、基板支持体上に配置された基板上で半導体製造プロセスを実行する。
d=(2/3)(ε/i)1/2(2e/m)1/4(VP-VDC)3/4
(数式1)
(処理チャンバの概略説明)
(ユニバーサルプロセスキット)
Claims (15)
- 半導体処理チャンバ内での使用に適したプロセスキットであって、
エッジリングであって、
内側リングであって、
第2面に対向する第1面を有する非金属導電体を含み、内部リングの第2面は、少なくとも部分的に内部に穿孔された少なくとも1つのスロットを含み、少なくとも1つの熱接触パッドはスロット内に収容され、少なくとも1つの熱接触パッドはシリコーン材料を含み、非金属導電体は50オーム・cm未満の抵抗率を有し、内側リングは内側リングの内径に沿って配置されたノッチを含み、ノッチは、1200μm未満立ち上がる鉛直成分と、1300μm~2500μmの間で延びる水平成分とを有し、スロットはノッチの鉛直成分と非金属導電体の外壁の間に放射状に配置されており、少なくとも1つの熱接触パッドはスロットの深さより大きい高さを有する内側リングと、
内側リングに結合され、内側リングの周囲を囲む外側リングであって、
第4面に対向する第3面を有する石英本体を含み、
導電性部材を収容するために第4面に形成されたチャネルを有する外側リングとを含むエッジリングを含むプロセスキット。 - 第2の熱接触パッド、第3の熱接触パッド、及び第4の熱接触パッドをさらに含み、各熱接触パッドは、内側リングに形成されたスロット内に配置されている、請求項1記載のプロセスキット。
- 内側リングは、炭化ケイ素材料、シリコン材料、又はそれらの組み合わせを含んでいる、請求項2記載のプロセスキット。
- 少なくとも1つの熱接触パッドは、非連続的なリング形状を有する、請求項2記載のプロセスキット。
- チャネル内に少なくとも部分的に配置された前記導電性部材をさらに備えている、請求項1記載のプロセスキット。
- 外側リングは、外側リングの内周に沿って形成された支持棚を有し、
少なくとも1つのスロットは、ノッチと支持棚との間に半径方向に配置されている、請求項5記載のプロセスキット。 - 処理チャンバ内での使用に適したプロセスキットであって、
処理チャンバ内に配置された基板支持アセンブリの周囲を囲むエッジリングであって、
基板支持アセンブリに隣接して配置された内側リングであって、内側リングは、非金属導電性材料と、内側リングの内径に沿って配置されたノッチとを含み、ノッチは、1200μm未満立ち上がる鉛直成分と、1300μm~2500μmの間で延びる水平成分とを有する内側リングと、
内側リングに結合され、内側リングの周囲を囲む外側リングであって、石英材料を含む外側リングとを含むエッジリングと、
内側リングに結合され、内側リング内に形成されたスロット内に配置された少なくとも1つの熱接触パッドであって、スロットはノッチの鉛直成分と内側リングの外径の間に放射状に配置されており、少なくとも1つの熱接触パッドはスロットの深さより大きい高さを有する熱接触パッドと、
外側リングに結合された導電性部材であって、エッジリングに形成されたチャネル内に少なくとも部分的に配置された導電性部材とを含むプロセスキット。 - 少なくとも1つの熱接触パッドはシリコーン材料を含む、請求項7記載のプロセスキット。
- 内側リングは50オーム・cm未満の抵抗率を有する、請求項7記載のプロセスキット。
- 第2の熱接触パッド、第3の熱接触パッド、及び第4の熱接触パッドを含み、各熱接触パッドは、エッジリング内に形成されたスロット内に配置される、請求項7記載のプロセスキット。
- 基板上に半導体プロセスを実行するためのプラズマチャンバであって、
基板支持アセンブリと、
基板支持アセンブリに隣接して使用するのに適し、基板支持アセンブリのフランジに結合されたプロセスキットであって、
エッジリングの内径に沿って配置されたノッチを含むエッジリングであって、ノッチは、1200μm未満立ち上がる鉛直成分と、1300μm~2500μmの間で延びる水平成分とを有し、エッジリングは、
基板支持アセンブリに隣接して配置された内側リングであって、非金属の導電性材料と、ノッチの鉛直成分と内側リングの外径の間に放射状に配置されたスロットを含む内側リングと、
内側リングに結合され、内側リングの周囲を囲む外側リングであって、石英材料を含む外側リングと、
外側リングに結合された導電性部材であって、外側リングに形成されたチャネル内に少なくとも部分的に配置された導電性部材とを含むプロセスキットとを含むプラズマチャンバ。 - 内側リング内に形成されたスロット内に配置された少なくとも1つの熱接触パッドを含み、少なくとも1つの熱接触パッドはスロットの深さより大きい高さを有する、請求項11記載のプラズマチャンバ。
- 第2の熱接触パッド、第3の熱接触パッド、及び第4の熱接触パッドを含み、各熱接触パッドは、エッジリング内に形成されたスロット内に配置される、請求項12記載のプラズマチャンバ。
- 外側リングは、外側リングの内周に沿って形成された支持棚を有している、請求項12記載のプラズマチャンバ。
- スロットは、ノッチと支持棚との間に半径方向に配置されている、請求項14記載のプラズマチャンバ。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2022104311A JP2022141681A (ja) | 2016-03-04 | 2022-06-29 | ユニバーサルプロセスキット |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201662303849P | 2016-03-04 | 2016-03-04 | |
US62/303,849 | 2016-03-04 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2022104311A Division JP2022141681A (ja) | 2016-03-04 | 2022-06-29 | ユニバーサルプロセスキット |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017157828A JP2017157828A (ja) | 2017-09-07 |
JP7098273B2 true JP7098273B2 (ja) | 2022-07-11 |
Family
ID=58667276
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017023919A Active JP7098273B2 (ja) | 2016-03-04 | 2017-02-13 | ユニバーサルプロセスキット |
JP2017000570U Active JP3210105U (ja) | 2016-03-04 | 2017-02-13 | ユニバーサルプロセスキット |
JP2022104311A Pending JP2022141681A (ja) | 2016-03-04 | 2022-06-29 | ユニバーサルプロセスキット |
Family Applications After (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017000570U Active JP3210105U (ja) | 2016-03-04 | 2017-02-13 | ユニバーサルプロセスキット |
JP2022104311A Pending JP2022141681A (ja) | 2016-03-04 | 2022-06-29 | ユニバーサルプロセスキット |
Country Status (5)
Country | Link |
---|---|
US (1) | US11049760B2 (ja) |
JP (3) | JP7098273B2 (ja) |
KR (1) | KR102415847B1 (ja) |
CN (3) | CN113013013A (ja) |
TW (3) | TWM548885U (ja) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7098273B2 (ja) * | 2016-03-04 | 2022-07-11 | アプライド マテリアルズ インコーポレイテッド | ユニバーサルプロセスキット |
US20190287835A1 (en) * | 2018-02-01 | 2019-09-19 | Yield Engineering Systems, Inc. | Interchangeable Edge Rings For Stabilizing Wafer Placement And System Using Same |
JP7061889B2 (ja) * | 2018-02-15 | 2022-05-02 | 東京エレクトロン株式会社 | 被処理体の載置装置及び処理装置 |
CN110468383B (zh) * | 2018-05-11 | 2022-04-22 | 北京北方华创微电子装备有限公司 | 工艺套件及反应腔室 |
JP7333712B2 (ja) * | 2019-06-05 | 2023-08-25 | 東京エレクトロン株式会社 | 静電チャック、支持台及びプラズマ処理装置 |
JP2022543811A (ja) * | 2019-08-05 | 2022-10-14 | ラム リサーチ コーポレーション | 基板処理システムのためのエッジリングシステム |
KR102077975B1 (ko) * | 2019-10-15 | 2020-02-14 | 주식회사 기가레인 | 플라즈마 처리 수직도가 향상된 플라즈마 처리 장치 |
US20210285101A1 (en) * | 2020-03-12 | 2021-09-16 | Applied Materials, Inc. | Methods and apparatus for conductance liners in semiconductor process chambers |
JP7441711B2 (ja) | 2020-04-13 | 2024-03-01 | 東京エレクトロン株式会社 | 基板支持台、プラズマ処理システム及びエッジリングの載置方法 |
WO2024097679A1 (en) * | 2022-11-03 | 2024-05-10 | Lam Research Corporation | Systems and methods for increasing a heat transfer contact area associated with an edge ring |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001516948A (ja) | 1997-09-16 | 2001-10-02 | アプライド マテリアルズ インコーポレイテッド | プラズマチャンバの半導体ワークピースを取り囲むシールド又はリング |
JP2008244096A (ja) | 2007-03-27 | 2008-10-09 | Tokyo Electron Ltd | 熱伝導シート及びこれを用いた被処理基板の載置装置 |
JP2010016363A (ja) | 2008-07-02 | 2010-01-21 | Ngk Insulators Ltd | ウエハ載置装置及びそれに用いる部品 |
JP2010251723A (ja) | 2009-03-27 | 2010-11-04 | Tokyo Electron Ltd | プラズマ処理装置およびプラズマ処理方法 |
JP2013511847A (ja) | 2009-11-20 | 2013-04-04 | アプライド マテリアルズ インコーポレイテッド | アーク放電を低減させた静電チャック |
Family Cites Families (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3257741B2 (ja) * | 1994-03-03 | 2002-02-18 | 東京エレクトロン株式会社 | プラズマエッチング装置及び方法 |
US6284093B1 (en) | 1996-11-29 | 2001-09-04 | Applied Materials, Inc. | Shield or ring surrounding semiconductor workpiece in plasma chamber |
KR100635975B1 (ko) * | 2000-02-14 | 2006-10-20 | 동경 엘렉트론 주식회사 | 플라즈마 처리 장치 및 방법과, 플라즈마 처리 장치용 링 부재 |
US6554954B2 (en) | 2001-04-03 | 2003-04-29 | Applied Materials Inc. | Conductive collar surrounding semiconductor workpiece in plasma chamber |
US20030106646A1 (en) | 2001-12-11 | 2003-06-12 | Applied Materials, Inc. | Plasma chamber insert ring |
KR100578129B1 (ko) * | 2003-09-19 | 2006-05-10 | 삼성전자주식회사 | 플라즈마 식각 장치 |
US7338578B2 (en) | 2004-01-20 | 2008-03-04 | Taiwan Semiconductor Manufacturing Co., Ltd. | Step edge insert ring for etch chamber |
JP4596883B2 (ja) * | 2004-10-28 | 2010-12-15 | 京セラ株式会社 | 環状ヒータ |
KR100794308B1 (ko) | 2006-05-03 | 2008-01-11 | 삼성전자주식회사 | 반도체 플라즈마 장치 |
US20090221150A1 (en) | 2008-02-29 | 2009-09-03 | Applied Materials, Inc. | Etch rate and critical dimension uniformity by selection of focus ring material |
JP5274918B2 (ja) * | 2008-07-07 | 2013-08-28 | 東京エレクトロン株式会社 | プラズマ処理装置のチャンバー内部材の温度制御方法、チャンバー内部材及び基板載置台、並びにそれを備えたプラズマ処理装置 |
JP5255936B2 (ja) | 2008-07-18 | 2013-08-07 | 東京エレクトロン株式会社 | フォーカスリング及び基板載置台、並びにそれらを備えたプラズマ処理装置 |
US20140069584A1 (en) | 2008-07-23 | 2014-03-13 | Applied Materials, Inc. | Differential counter electrode tuning in a plasma reactor with an rf-driven ceiling electrode |
US20140034239A1 (en) | 2008-07-23 | 2014-02-06 | Applied Materials, Inc. | Differential counter electrode tuning in a plasma reactor with an rf-driven workpiece support electrode |
US8449679B2 (en) * | 2008-08-15 | 2013-05-28 | Lam Research Corporation | Temperature controlled hot edge ring assembly |
US8287650B2 (en) | 2008-09-10 | 2012-10-16 | Applied Materials, Inc. | Low sloped edge ring for plasma processing chamber |
EP2342951B1 (en) * | 2008-10-31 | 2019-03-06 | Lam Research Corporation | Lower electrode assembly of plasma processing chamber |
JP2010278166A (ja) * | 2009-05-27 | 2010-12-09 | Tokyo Electron Ltd | プラズマ処理用円環状部品、及びプラズマ処理装置 |
SG170717A1 (en) * | 2009-11-02 | 2011-05-30 | Lam Res Corp | Hot edge ring with sloped upper surface |
KR200479167Y1 (ko) | 2010-01-27 | 2015-12-28 | 어플라이드 머티어리얼스, 인코포레이티드 | 반도체 제조 챔버의 링 어셈블리 |
US8988848B2 (en) | 2011-12-15 | 2015-03-24 | Applied Materials, Inc. | Extended and independent RF powered cathode substrate for extreme edge tunability |
USD665491S1 (en) | 2012-01-25 | 2012-08-14 | Applied Materials, Inc. | Deposition chamber cover ring |
US9412579B2 (en) | 2012-04-26 | 2016-08-09 | Applied Materials, Inc. | Methods and apparatus for controlling substrate uniformity |
USD766849S1 (en) | 2013-05-15 | 2016-09-20 | Ebara Corporation | Substrate retaining ring |
JP1495083S (ja) | 2013-06-14 | 2017-04-03 | ||
JP1494712S (ja) | 2013-05-15 | 2017-04-03 | ||
US20150001180A1 (en) | 2013-06-28 | 2015-01-01 | Applied Materials, Inc. | Process kit for edge critical dimension uniformity control |
JP6261287B2 (ja) * | 2013-11-05 | 2018-01-17 | 東京エレクトロン株式会社 | プラズマ処理装置 |
JP2016025277A (ja) * | 2014-07-23 | 2016-02-08 | クアーズテック株式会社 | フォーカスリング |
JP7098273B2 (ja) * | 2016-03-04 | 2022-07-11 | アプライド マテリアルズ インコーポレイテッド | ユニバーサルプロセスキット |
USD797691S1 (en) * | 2016-04-14 | 2017-09-19 | Applied Materials, Inc. | Composite edge ring |
KR102581226B1 (ko) * | 2016-12-23 | 2023-09-20 | 삼성전자주식회사 | 플라즈마 처리 장치 |
-
2017
- 2017-02-13 JP JP2017023919A patent/JP7098273B2/ja active Active
- 2017-02-13 JP JP2017000570U patent/JP3210105U/ja active Active
- 2017-02-20 US US15/436,936 patent/US11049760B2/en active Active
- 2017-03-02 TW TW106202912U patent/TWM548885U/zh unknown
- 2017-03-02 TW TW110115982A patent/TWI746406B/zh active
- 2017-03-02 TW TW106106802A patent/TWI736592B/zh active
- 2017-03-03 CN CN202110172262.6A patent/CN113013013A/zh active Pending
- 2017-03-03 CN CN201720205937.1U patent/CN206877967U/zh active Active
- 2017-03-03 KR KR1020170027681A patent/KR102415847B1/ko active IP Right Grant
- 2017-03-03 CN CN201710124363.XA patent/CN107154335B/zh active Active
-
2022
- 2022-06-29 JP JP2022104311A patent/JP2022141681A/ja active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001516948A (ja) | 1997-09-16 | 2001-10-02 | アプライド マテリアルズ インコーポレイテッド | プラズマチャンバの半導体ワークピースを取り囲むシールド又はリング |
JP2008244096A (ja) | 2007-03-27 | 2008-10-09 | Tokyo Electron Ltd | 熱伝導シート及びこれを用いた被処理基板の載置装置 |
JP2010016363A (ja) | 2008-07-02 | 2010-01-21 | Ngk Insulators Ltd | ウエハ載置装置及びそれに用いる部品 |
JP2010251723A (ja) | 2009-03-27 | 2010-11-04 | Tokyo Electron Ltd | プラズマ処理装置およびプラズマ処理方法 |
JP2013511847A (ja) | 2009-11-20 | 2013-04-04 | アプライド マテリアルズ インコーポレイテッド | アーク放電を低減させた静電チャック |
Also Published As
Publication number | Publication date |
---|---|
CN206877967U (zh) | 2018-01-12 |
KR20170103696A (ko) | 2017-09-13 |
TW201742102A (zh) | 2017-12-01 |
JP2022141681A (ja) | 2022-09-29 |
US11049760B2 (en) | 2021-06-29 |
TW202143288A (zh) | 2021-11-16 |
TWM548885U (zh) | 2017-09-11 |
KR102415847B1 (ko) | 2022-06-30 |
JP3210105U (ja) | 2017-04-27 |
CN107154335B (zh) | 2021-02-09 |
JP2017157828A (ja) | 2017-09-07 |
CN107154335A (zh) | 2017-09-12 |
TWI746406B (zh) | 2021-11-11 |
TWI736592B (zh) | 2021-08-21 |
US20170256435A1 (en) | 2017-09-07 |
CN113013013A (zh) | 2021-06-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP7098273B2 (ja) | ユニバーサルプロセスキット | |
US11476093B2 (en) | Plasma etching systems and methods with secondary plasma injection | |
TWI771470B (zh) | 具有電浮電源供應的基板支撐件 | |
US9997381B2 (en) | Hybrid edge ring for plasma wafer processing | |
US10804081B2 (en) | Edge ring dimensioned to extend lifetime of elastomer seal in a plasma processing chamber | |
JP2016184610A (ja) | 上部電極、エッジリングおよびプラズマ処理装置 | |
US20150162170A1 (en) | Plasma processing apparatus and focus ring | |
US20110059615A1 (en) | Hybrid rf capacitively and inductively coupled plasma source using multifrequency rf powers and methods of use thereof | |
US11152192B2 (en) | Plasma processing apparatus and method | |
KR20150020093A (ko) | 에칭 방법 | |
US8529730B2 (en) | Plasma processing apparatus | |
JP2010278166A (ja) | プラズマ処理用円環状部品、及びプラズマ処理装置 | |
JP7051897B2 (ja) | 電極フィラメントを有するプラズマ反応器 | |
JP2023517716A (ja) | 基板処理チャンバにおける処理キットのシース及び温度制御 | |
JP2021141277A (ja) | 載置台及びプラズマ処理装置 | |
JP4386753B2 (ja) | ウェハーステージ及びプラズマ処理装置 | |
CN111587481A (zh) | 用于基板支撑件的处理配件 | |
US10312057B2 (en) | Plasma processing apparatus | |
WO2010119947A1 (ja) | プラズマ処理装置 | |
KR101885108B1 (ko) | 기판 처리 장치 | |
JP2003318165A (ja) | プラズマ生成用ポイントカスプ磁界を作るマグネット配列およびプラズマ処理装置 | |
JP2023039435A (ja) | プラズマ処理装置のフォーカスリングをクリーニングするための導電性部材 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20200117 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20210204 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20210323 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20210623 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20210712 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20211005 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20220105 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20220303 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20220607 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20220629 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7098273 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |