JP2017157828A - ユニバーサルプロセスキット - Google Patents
ユニバーサルプロセスキット Download PDFInfo
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- JP2017157828A JP2017157828A JP2017023919A JP2017023919A JP2017157828A JP 2017157828 A JP2017157828 A JP 2017157828A JP 2017023919 A JP2017023919 A JP 2017023919A JP 2017023919 A JP2017023919 A JP 2017023919A JP 2017157828 A JP2017157828 A JP 2017157828A
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- 238000000034 method Methods 0.000 title claims abstract description 59
- 230000008569 process Effects 0.000 title claims abstract description 59
- 239000000758 substrate Substances 0.000 claims abstract description 94
- 239000000463 material Substances 0.000 claims abstract description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 11
- 239000010453 quartz Substances 0.000 claims abstract description 7
- 229920001296 polysiloxane Polymers 0.000 claims abstract 3
- 239000004065 semiconductor Substances 0.000 claims description 24
- 239000004020 conductor Substances 0.000 claims description 8
- 230000000630 rising effect Effects 0.000 claims 3
- 150000002500 ions Chemical class 0.000 description 9
- 239000007789 gas Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 239000003989 dielectric material Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 229920005573 silicon-containing polymer Polymers 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
- H01J37/32495—Means for protecting the vessel against plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32642—Focus rings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
- H01J2237/3321—CVD [Chemical Vapor Deposition]
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- H—ELECTRICITY
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- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
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- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Drying Of Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Chemical Vapour Deposition (AREA)
- Plasma Technology (AREA)
Abstract
Description
本開示の実施形態は、概して、半導体処理に関し、より具体的には、半導体処理チャンバ内で使用されるプロセスキットに関する。
様々な半導体製造プロセス(例えば、プラズマ援用エッチング又は化学気相堆積)は、プラズマ処理チャンバ内で実行される。基板支持体は、半導体処理チャンバ内の処理位置で基板を支持する。1以上の処理ガスを含むプラズマ領域が半導体処理チャンバ内で維持され、基板支持体上に配置された基板上で半導体製造プロセスを実行する。
d=(2/3)(ε/i)1/2(2e/m)1/4(VP−VDC)3/4
(数式1)
(処理チャンバの概略説明)
(ユニバーサルプロセスキット)
Claims (14)
- 半導体処理チャンバ内での使用に適したプロセスキットであって、
エッジリングであって、
内側リングであって、
第2面に対向する第1面を有する非金属導電体を含み、内部リングの第2面は、少なくとも部分的に内部に穿孔された少なくとも1つのスロットを含み、少なくとも1つの熱接触パッドはスロット内に収容され、少なくとも1つの熱接触パッドはシリコーン材料を含み、非金属導電体は50オーム・cm未満の抵抗率を有し、内側リングは内側リングの内径に沿って配置されたノッチを含み、ノッチは、1200μm未満立ち上がる鉛直成分と、1300μm〜2500μmの間で延びる水平成分とを有する内側リングと、
内側リングに結合され、内側リングの周囲を囲む外側リングであって、
第4面に対向する第3面を有する石英本体を含む外側リングとを含むエッジリングを含むプロセスキット。 - 内側リングの第2面に接触する少なくとも1つの熱接触パッドを含む、請求項1記載のプロセスキット。
- 熱接触パッド及びエッジリングは、同様の熱伝導率を共有する、請求項2記載のプロセスキット。
- 少なくとも1つの熱接触パッドは、非連続的なリング形状を有する、請求項2記載のプロセスキット。
- 外側リングの第4面に結合された導電性部材を含む、請求項1記載のプロセスキット。
- 外側リングは、第4面に形成されたチャネルを含み、導電性部材は、チャネル内に少なくとも部分的に配置される、請求項5記載のプロセスキット。
- 処理チャンバ内での使用に適したプロセスキットであって、
処理チャンバ内に配置された基板支持アセンブリの周囲を囲むエッジリングであって、
基板支持アセンブリに隣接して配置された内側リングであって、内側リングは、非金属導電性材料と、内側リングの内径に沿って配置されたノッチとを含み、ノッチは、1200μm未満立ち上がる鉛直成分と、1300μm〜2500μmの間で延びる水平成分とを有する内側リングと、
内側リングに結合され、内側リングの周囲を囲む外側リングであって、石英材料を含む外側リングとを含むエッジリングと、
内側リングに結合され、内側リング内に形成されたスロット内に配置された少なくとも1つの熱接触パッドと、
外側リングに結合された導電性部材とを含むプロセスキット。 - 各熱接触パッドはシリコーン材料を含む、請求項7記載のプロセスキット。
- 内側リングは50オーム・cm未満の抵抗率を有する、請求項7記載のプロセスキット。
- 第2の熱接触パッド、第3の熱接触パッド、及び第4の熱接触パッドを含み、各熱接触パッドは、エッジリング内に形成されたスロット内に配置される、請求項7記載のプロセスキット。
- 基板上に半導体プロセスを実行するためのプラズマチャンバであって、
基板支持アセンブリと、
基板支持アセンブリに隣接して使用するのに適し、基板支持アセンブリのフランジに結合されたプロセスキットであって、
エッジリングの内径に沿って配置されたノッチを含むエッジリングであって、ノッチは、1200μm未満立ち上がる鉛直成分と、1300μm〜2500μmの間で延びる水平成分とを有し、エッジリングは、
非金属の導電性材料を含む、基板支持アセンブリに隣接して配置された内側リングと、
内側リングに結合され、内側リングの周囲を囲む外側リングであって、石英材料を含む外側リングとを含むエッジリングと、
エッジリングに結合された導電性部材とを含むプロセスキットとを含むプラズマチャンバ。 - エッジリングに結合され、エッジリング内に形成されたスロット内に配置された少なくとも1つの熱接触パッドを含む、請求項11記載のプラズマチャンバ。
- 第2の熱接触パッド、第3の熱接触パッド、及び第4の熱接触パッドを含み、各熱接触パッドは、エッジリング内に形成されたスロット内に配置される、請求項12記載のプラズマチャンバ。
- 導電性部材は、エッジリング内に形成されたチャネル内に少なくとも部分的に配置されている、請求項11記載のプラズマチャンバ。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2022104311A JP2022141681A (ja) | 2016-03-04 | 2022-06-29 | ユニバーサルプロセスキット |
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US201662303849P | 2016-03-04 | 2016-03-04 | |
US62/303,849 | 2016-03-04 |
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JP2022104311A Division JP2022141681A (ja) | 2016-03-04 | 2022-06-29 | ユニバーサルプロセスキット |
Publications (2)
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JP2017157828A true JP2017157828A (ja) | 2017-09-07 |
JP7098273B2 JP7098273B2 (ja) | 2022-07-11 |
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JP2017023919A Active JP7098273B2 (ja) | 2016-03-04 | 2017-02-13 | ユニバーサルプロセスキット |
JP2017000570U Active JP3210105U (ja) | 2016-03-04 | 2017-02-13 | ユニバーサルプロセスキット |
JP2022104311A Pending JP2022141681A (ja) | 2016-03-04 | 2022-06-29 | ユニバーサルプロセスキット |
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JP2017000570U Active JP3210105U (ja) | 2016-03-04 | 2017-02-13 | ユニバーサルプロセスキット |
JP2022104311A Pending JP2022141681A (ja) | 2016-03-04 | 2022-06-29 | ユニバーサルプロセスキット |
Country Status (5)
Country | Link |
---|---|
US (1) | US11049760B2 (ja) |
JP (3) | JP7098273B2 (ja) |
KR (1) | KR102415847B1 (ja) |
CN (3) | CN206877967U (ja) |
TW (3) | TWM548885U (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2019140357A (ja) * | 2018-02-15 | 2019-08-22 | 東京エレクトロン株式会社 | 被処理体の載置装置及び処理装置 |
JP2020202198A (ja) * | 2019-06-05 | 2020-12-17 | 東京エレクトロン株式会社 | 静電チャック、支持台及びプラズマ処理装置 |
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CN107154335B (zh) | 2021-02-09 |
TWI746406B (zh) | 2021-11-11 |
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US20170256435A1 (en) | 2017-09-07 |
CN206877967U (zh) | 2018-01-12 |
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TW202143288A (zh) | 2021-11-16 |
TW201742102A (zh) | 2017-12-01 |
KR20170103696A (ko) | 2017-09-13 |
US11049760B2 (en) | 2021-06-29 |
JP3210105U (ja) | 2017-04-27 |
CN107154335A (zh) | 2017-09-12 |
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