KR20170123348A - 노광 장치 - Google Patents

노광 장치 Download PDF

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Publication number
KR20170123348A
KR20170123348A KR1020177030955A KR20177030955A KR20170123348A KR 20170123348 A KR20170123348 A KR 20170123348A KR 1020177030955 A KR1020177030955 A KR 1020177030955A KR 20177030955 A KR20177030955 A KR 20177030955A KR 20170123348 A KR20170123348 A KR 20170123348A
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KR
South Korea
Prior art keywords
optical
light
distribution
polarization state
polarization
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020177030955A
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English (en)
Korean (ko)
Inventor
오사무 다니츠
히로유키 히로타
고지 시게마츠
신이치 구리타
Original Assignee
가부시키가이샤 니콘
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Application filed by 가부시키가이샤 니콘 filed Critical 가부시키가이샤 니콘
Publication of KR20170123348A publication Critical patent/KR20170123348A/ko
Ceased legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
    • G03F7/70833—Mounting of optical systems, e.g. mounting of illumination system, projection system or stage systems on base-plate or ground
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
    • G02B26/007—Optical devices or arrangements for the control of light using movable or deformable optical elements the movable or deformable optical element controlling the colour, i.e. a spectral characteristic, of the light
    • G02B26/008—Optical devices or arrangements for the control of light using movable or deformable optical elements the movable or deformable optical element controlling the colour, i.e. a spectral characteristic, of the light in the form of devices for effecting sequential colour changes, e.g. colour wheels
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
    • G02B26/06—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the phase of light
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/28—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for polarising
    • G02B27/286—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for polarising for controlling or changing the state of polarisation, e.g. transforming one polarisation state into another
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/70108—Off-axis setting using a light-guiding element, e.g. diffractive optical elements [DOEs] or light guides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70141—Illumination system adjustment, e.g. adjustments during exposure or alignment during assembly of illumination system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/7015—Details of optical elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70308—Optical correction elements, filters or phase plates for manipulating imaging light, e.g. intensity, wavelength, polarisation, phase or image shift
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70516—Calibration of components of the microlithographic apparatus, e.g. light sources, addressable masks or detectors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70566—Polarisation control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70991—Connection with other apparatus, e.g. multiple exposure stations, particular arrangement of exposure apparatus and pre-exposure and/or post-exposure apparatus; Shared apparatus, e.g. having shared radiation source, shared mask or workpiece stage, shared base-plate; Utilities, e.g. cable, pipe or wireless arrangements for data, power, fluids or vacuum
    • H01L21/0274—

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Environmental & Geological Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Astronomy & Astrophysics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Polarising Elements (AREA)
  • Microscoopes, Condenser (AREA)
KR1020177030955A 2005-01-21 2006-01-18 노광 장치 Ceased KR20170123348A (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JPJP-P-2005-013576 2005-01-21
JP2005013576 2005-01-21
JP2005120709 2005-04-19
JPJP-P-2005-120709 2005-04-19
PCT/JP2006/300584 WO2006077849A1 (ja) 2005-01-21 2006-01-18 照明光学装置の調整方法、照明光学装置、露光装置、および露光方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020167019287A Division KR20160088960A (ko) 2005-01-21 2006-01-18 조명 광학계

Publications (1)

Publication Number Publication Date
KR20170123348A true KR20170123348A (ko) 2017-11-07

Family

ID=36692238

Family Applications (6)

Application Number Title Priority Date Filing Date
KR1020177030955A Ceased KR20170123348A (ko) 2005-01-21 2006-01-18 노광 장치
KR1020167019287A Abandoned KR20160088960A (ko) 2005-01-21 2006-01-18 조명 광학계
KR1020077005320A Expired - Fee Related KR101332066B1 (ko) 2005-01-21 2006-01-18 조명 광학 장치의 조정 방법, 조명 광학 장치, 노광 장치및 노광 방법
KR1020157012242A Expired - Fee Related KR101642242B1 (ko) 2005-01-21 2006-01-18 조명 광학계 및 노광 장치
KR1020127023534A Expired - Fee Related KR101431359B1 (ko) 2005-01-21 2006-01-18 조명 광학 장치, 노광 장치, 노광 방법 및 디바이스 제조 방법
KR1020147004010A Ceased KR20140029548A (ko) 2005-01-21 2006-01-18 조명 광학 장치, 및 노광 장치

Family Applications After (5)

Application Number Title Priority Date Filing Date
KR1020167019287A Abandoned KR20160088960A (ko) 2005-01-21 2006-01-18 조명 광학계
KR1020077005320A Expired - Fee Related KR101332066B1 (ko) 2005-01-21 2006-01-18 조명 광학 장치의 조정 방법, 조명 광학 장치, 노광 장치및 노광 방법
KR1020157012242A Expired - Fee Related KR101642242B1 (ko) 2005-01-21 2006-01-18 조명 광학계 및 노광 장치
KR1020127023534A Expired - Fee Related KR101431359B1 (ko) 2005-01-21 2006-01-18 조명 광학 장치, 노광 장치, 노광 방법 및 디바이스 제조 방법
KR1020147004010A Ceased KR20140029548A (ko) 2005-01-21 2006-01-18 조명 광학 장치, 및 노광 장치

Country Status (10)

Country Link
US (1) US20070146676A1 (enExample)
EP (3) EP3358414A1 (enExample)
JP (3) JP4582096B2 (enExample)
KR (6) KR20170123348A (enExample)
CN (3) CN101164142B (enExample)
HK (1) HK1251992A1 (enExample)
IL (2) IL182064A (enExample)
SG (1) SG159495A1 (enExample)
TW (4) TWI453795B (enExample)
WO (1) WO2006077849A1 (enExample)

Families Citing this family (121)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2157480B1 (en) 2003-04-09 2015-05-27 Nikon Corporation Exposure method and apparatus, and device manufacturing method
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TWI519819B (zh) * 2003-11-20 2016-02-01 尼康股份有限公司 光束變換元件、光學照明裝置、曝光裝置、以及曝光方法
US8270077B2 (en) * 2004-01-16 2012-09-18 Carl Zeiss Smt Gmbh Polarization-modulating optical element
US20070019179A1 (en) * 2004-01-16 2007-01-25 Damian Fiolka Polarization-modulating optical element
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US7324280B2 (en) 2004-05-25 2008-01-29 Asml Holding N.V. Apparatus for providing a pattern of polarization
US7697138B2 (en) * 2005-01-19 2010-04-13 Litel Instruments Method and apparatus for determination of source polarization matrix
TWI453795B (zh) * 2005-01-21 2014-09-21 尼康股份有限公司 照明光學裝置、曝光裝置、曝光方法以及元件製造方法
US7375799B2 (en) 2005-02-25 2008-05-20 Asml Netherlands B.V. Lithographic apparatus
JP4612849B2 (ja) * 2005-03-01 2011-01-12 キヤノン株式会社 露光方法、露光装置及びデバイス製造方法
CN101253451B (zh) * 2005-06-13 2010-09-29 Asml荷兰有限公司 被动式掩模版工具、光刻设备以及在光刻工具中对器件图案化的方法
DE102006031807A1 (de) * 2005-07-12 2007-01-18 Carl Zeiss Smt Ag Beleuchtungseinrichtung einer mikrolithographischen Projektionsbelichtungsanlage, sowie Depolarisator
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EP1953805A4 (en) * 2005-11-10 2010-03-31 Nikon Corp OPTICAL LIGHTING SYSTEM, EXPOSURE SYSTEM AND EXPOSURE METHOD
JP2007220767A (ja) * 2006-02-15 2007-08-30 Canon Inc 露光装置及びデバイス製造方法
KR101486589B1 (ko) * 2006-04-17 2015-01-26 가부시키가이샤 니콘 조명 광학 장치, 노광 장치, 및 디바이스 제조 방법
WO2008004654A1 (en) * 2006-07-07 2008-01-10 Nikon Corporation Illuminating optical apparatus, exposure apparatus and device manufacturing method
JP5308638B2 (ja) * 2006-07-14 2013-10-09 カール・ツァイス・エスエムティー・ゲーエムベーハー マイクロリソグラフィ投影露光装置用の照明光学系
DE102006032810A1 (de) * 2006-07-14 2008-01-17 Carl Zeiss Smt Ag Beleuchtungsoptik für eine Mikrolithografie-Projektionsbelichtungsanlage, Beleuchtungssystem mit einer derartigen Beleuchtungsoptik, mikrolithografie-Projektionsbelichtungsanlage mit einem derartigen Beleuchtungssystem, mikrolithografisches Herstellungsverfahren für Bauelemente sowie mit diesem Verfahren hergestelltes Bauelement
JP2008108851A (ja) * 2006-10-24 2008-05-08 Canon Inc 照明装置及び当該照明装置を有する露光装置、並びに、デバイス製造方法
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US9116346B2 (en) * 2007-11-06 2015-08-25 Nikon Corporation Illumination apparatus, illumination method, exposure apparatus, and device manufacturing method
JP5326259B2 (ja) * 2007-11-08 2013-10-30 株式会社ニコン 照明光学装置、露光装置、およびデバイス製造方法
DE102007055062A1 (de) 2007-11-16 2009-05-28 Carl Zeiss Smt Ag Optisches System, sowie Verfahren zur Charakterisierung eines optischen Systems
DE102007055567A1 (de) * 2007-11-20 2009-05-28 Carl Zeiss Smt Ag Optisches System
US8040492B2 (en) * 2007-11-27 2011-10-18 Carl Zeiss Smt Gmbh Illumination system of a microlithographic projection exposure apparatus
EP2233960A4 (en) * 2007-12-17 2012-01-25 Nikon Corp SPATIAL LIGHT MODULATION UNIT, OPTICAL LIGHTING SYSTEM, ALIGNMENT DEVICE AND COMPONENT MANUFACTURING METHOD
TW200929333A (en) * 2007-12-17 2009-07-01 Nikon Corp Illumination optical system, exposure apparatus, and device manufacturing method
DE102008003289A1 (de) 2008-01-05 2009-07-09 Carl Zeiss Smt Ag Beleuchtungseinrichtung einer mikrolithographischen Projektionsbelichtungsanlage
JP2009194107A (ja) * 2008-02-13 2009-08-27 Canon Inc 有効光源形状のデータベースの生成方法、光学像の算出方法、プログラム、露光方法及びデバイス製造方法
US8908151B2 (en) 2008-02-14 2014-12-09 Nikon Corporation Illumination optical system, exposure apparatus, device manufacturing method, compensation filter, and exposure optical system
JPWO2009125511A1 (ja) * 2008-04-11 2011-07-28 株式会社ニコン 空間光変調ユニット、照明光学系、露光装置、およびデバイス製造方法
US20090257043A1 (en) * 2008-04-14 2009-10-15 Nikon Corporation Illumination optical system, exposure apparatus, device manufacturing method, and exposure optical system
KR101695034B1 (ko) 2008-05-28 2017-01-10 가부시키가이샤 니콘 공간 광 변조기의 검사 장치, 조명 광학계, 노광 장치, 검사 방법, 조명 광학계의 조정 방법, 조명 방법, 노광 방법, 및 디바이스 제조 방법
US7796259B2 (en) * 2008-07-09 2010-09-14 Weifour, Inc. Rapid acquisition ellipsometry
DE102008040611A1 (de) * 2008-07-22 2010-01-28 Carl Zeiss Smt Ag Verfahren zum Modifizieren einer Polarisationsverteilung in einer mikrolithographischen Projektionsbelichtungsanlage, sowie mikrolithographische Projektionsbelichtungsanlage
US20100123883A1 (en) * 2008-11-17 2010-05-20 Nikon Corporation Projection optical system, exposure apparatus, and device manufacturing method
JP5541164B2 (ja) 2008-12-24 2014-07-09 株式会社ニコン 照明光学系、露光装置及びデバイスの製造方法
JP5365641B2 (ja) 2008-12-24 2013-12-11 株式会社ニコン 照明光学系、露光装置及びデバイスの製造方法
JP4447651B1 (ja) * 2009-02-06 2010-04-07 武蔵オプティカルシステム株式会社 レンズアダプタ
JP5633021B2 (ja) * 2009-06-29 2014-12-03 株式会社ブイ・テクノロジー アライメント方法、アライメント装置及び露光装置
TW201102765A (en) 2009-07-01 2011-01-16 Nikon Corp Grinding device, grinding method, exposure device and production method of a device
US20110037962A1 (en) * 2009-08-17 2011-02-17 Nikon Corporation Polarization converting unit, illumination optical system, exposure apparatus, and device manufacturing method
JP5531518B2 (ja) * 2009-09-08 2014-06-25 株式会社ニコン 偏光変換ユニット、照明光学系、露光装置、およびデバイス製造方法
DE102011003035A1 (de) 2010-02-08 2011-08-11 Carl Zeiss SMT GmbH, 73447 Polarisationsbeeinflussende optische Anordnung, sowie optisches System einer mikrolithographischen Projektionsbelichtungsanlage
JP5842808B2 (ja) 2010-02-20 2016-01-13 株式会社ニコン 瞳強度分布を調整する方法
US9389519B2 (en) 2010-02-25 2016-07-12 Nikon Corporation Measuring method and measuring apparatus of pupil transmittance distribution, exposure method and exposure apparatus, and device manufacturing method
US20110205519A1 (en) * 2010-02-25 2011-08-25 Nikon Corporation Polarization converting unit, illumination optical system, exposure apparatus, and device manufacturing method
EP2369413B1 (en) * 2010-03-22 2021-04-07 ASML Netherlands BV Illumination system and lithographic apparatus
DE102010029339A1 (de) 2010-05-27 2011-12-01 Carl Zeiss Smt Gmbh Optisches System für eine mikrolithographische Projektionsbelichtungsanlage sowie mikrolithographisches Belichtungsverfahren
DE102010029905A1 (de) 2010-06-10 2011-12-15 Carl Zeiss Smt Gmbh Optisches System einer mikrolithographischen Projektionsbelichtungsanlage
JP2012004465A (ja) * 2010-06-19 2012-01-05 Nikon Corp 照明光学系、露光装置、およびデバイス製造方法
JP5366019B2 (ja) 2010-08-02 2013-12-11 株式会社ニコン 伝送光学系、照明光学系、露光装置、およびデバイス製造方法
JP5507016B2 (ja) * 2010-09-28 2014-05-28 カール・ツァイス・エスエムティー・ゲーエムベーハー マイクロリソグラフィ投影露光装置の光学系及び像配置誤差を低減する方法
US20120212722A1 (en) 2011-02-21 2012-08-23 Nikon Corporation Fast Illumination Simulator Based on a Calibrated Flexible Point Spread Function
DE102011076434A1 (de) 2011-05-25 2012-11-29 Carl Zeiss Smt Gmbh Beleuchtungseinrichtung für eine mikrolithographische Projektionsbelichtungsanlage sowie mikrolithographisches Belichtungsverfahren
JP5807761B2 (ja) 2011-06-06 2015-11-10 株式会社ニコン 照明方法、照明光学装置、及び露光装置
TWI684788B (zh) 2011-06-13 2020-02-11 日商尼康股份有限公司 照明光學系統、曝光裝置以及元件製造方法
DE102011079548A1 (de) 2011-07-21 2012-07-19 Carl Zeiss Smt Gmbh Mikrolithographische Projektionsbelichtungsanlage sowie mikrolithographisches Belichtungsverfahren
DE102011079777A1 (de) 2011-07-26 2013-01-31 Carl Zeiss Smt Gmbh Mikrolithographisches Belichtungsverfahren
WO2013018799A1 (ja) 2011-08-04 2013-02-07 株式会社ニコン 照明装置
JP6103467B2 (ja) * 2011-10-06 2017-03-29 株式会社ニコン 照明光学系、照明方法、露光装置、露光方法、およびデバイス製造方法
DE102011085334A1 (de) 2011-10-27 2013-05-02 Carl Zeiss Smt Gmbh Optisches System in einer Beleuchtungseinrichtung einer mikrolithographischen Projektionsbelichtungsanlage
US9732934B2 (en) 2011-10-28 2017-08-15 Nikon Corporation Illumination device for optimizing polarization in an illumination pupil
DE102012200368A1 (de) * 2012-01-12 2013-07-18 Carl Zeiss Smt Gmbh Polarisationsbeeinflussende optische Anordnung, insbesondere in einer mikrolithographischen Projektionsbelichtungsanlage
DE102012200370A1 (de) 2012-01-12 2013-08-01 Carl Zeiss Smt Gmbh Verfahren zum Herstellen eines polarisationsbeeinflussenden optischen Elements, sowie polarisationsbeeinflussendes optisches Element
DE102012203944A1 (de) 2012-03-14 2013-10-02 Carl Zeiss Smt Gmbh Verfahren zur Justage eines optischen Systems einer mikrolithographischen Projektionsbelichtungsanlage
DE102012205045A1 (de) 2012-03-29 2013-10-02 Carl Zeiss Smt Gmbh Optisches System einer mikrolithographischen Projektionsbelichtungsanlage
KR101968796B1 (ko) 2012-03-29 2019-04-12 칼 짜이스 에스엠티 게엠베하 마이크로리소그래피 투영 노광 시스템의 채널의 결함을 보상하기 위한 장치 및 방법
DE102012206159A1 (de) 2012-04-16 2013-06-20 Carl Zeiss Smt Gmbh Polarisationsbeeinflussende optische Anordnung
DE102012206148A1 (de) 2012-04-16 2013-10-17 Carl Zeiss Smt Gmbh Optisches System einer mikrolithographischen Projektionsbelichtungsanlage, sowie Verfahren zur Justage eines optischen Systems
DE102012206154A1 (de) 2012-04-16 2013-06-06 Carl Zeiss Smt Gmbh Optisches System für eine mikrolithographische Projektionsbelichtungsanlage sowie mikrolithographisches Belichtungsverfahren
CN104395985B (zh) 2012-05-02 2018-01-30 株式会社尼康 光瞳亮度分布的评价方法和改善方法、照明光学系统及其调整方法、曝光装置、曝光方法以及器件制造方法
WO2013187259A1 (ja) * 2012-06-15 2013-12-19 三菱電機株式会社 レーザ加工装置
DE102012212864A1 (de) 2012-07-23 2013-08-22 Carl Zeiss Smt Gmbh Optisches System, insbesondere einer mikrolithographischen Projektionsbelichtungsanlage
DE102012214052A1 (de) 2012-08-08 2014-02-13 Carl Zeiss Smt Gmbh Mikrolithographisches Belichtungsverfahren, sowie mikrolithographische Projektionsbelichtungsanlage
DE102012214198A1 (de) 2012-08-09 2013-05-29 Carl Zeiss Smt Gmbh Beleuchtungseinrichtung einer mikrolithographischen Projektionsbelichtungsanlage
CN102890058B (zh) * 2012-09-18 2014-07-30 上海仪电物理光学仪器有限公司 多波长旋光仪波长转换机构
DE102012217769A1 (de) 2012-09-28 2014-04-03 Carl Zeiss Smt Gmbh Optisches System für eine mikrolithographische Projektionsbelichtungsanlage sowie mikrolithographisches Belichtungsverfahren
DE102012223217B9 (de) 2012-12-14 2014-07-10 Carl Zeiss Smt Gmbh Optisches System einer mikrolithographischen Projektionsbelichtungsanlage
DE102013200137A1 (de) 2013-01-08 2013-11-14 Carl Zeiss Smt Gmbh Verfahren zum Betreiben einer mikrolithographischen Projektionsbelichtungsanlage
US8922753B2 (en) 2013-03-14 2014-12-30 Carl Zeiss Smt Gmbh Optical system for a microlithographic projection exposure apparatus
DE102013204453B4 (de) 2013-03-14 2019-11-21 Carl Zeiss Smt Gmbh Optisches System für eine mikrolithographische Projektionsbelichtungsanlage, mikrolithographische Projektionsbelichtungsanlage und Verfahren zur mikrolithographischen Herstellung mikrostrukturierter Bauelemente
JP2015025977A (ja) * 2013-07-26 2015-02-05 日本精機株式会社 走査型投影装置
JP5534276B2 (ja) * 2013-08-23 2014-06-25 株式会社ニコン 照明光学系、露光装置、およびデバイス製造方法
US20150294037A1 (en) * 2014-04-11 2015-10-15 General Electric Company System and method for automated substation design and configuration
JP5839076B2 (ja) * 2014-04-25 2016-01-06 株式会社ニコン 照明光学系、露光装置、およびデバイス製造方法
CN105549327B (zh) 2014-10-29 2018-03-02 上海微电子装备（集团）股份有限公司 曝光装置的调整装置及调整方法
CN104991258A (zh) * 2015-07-16 2015-10-21 哈尔滨工业大学 红外激光匀光照明探测系统
KR102460551B1 (ko) * 2015-10-29 2022-10-31 삼성디스플레이 주식회사 레이저 결정화 장치
WO2018168923A1 (ja) 2017-03-16 2018-09-20 株式会社ニコン 制御装置及び制御方法、露光装置及び露光方法、デバイス製造方法、データ生成方法、並びに、プログラム
KR102384289B1 (ko) * 2017-10-17 2022-04-08 삼성디스플레이 주식회사 레이저 결정화 장치
TWI670541B (zh) * 2018-07-04 2019-09-01 陽程科技股份有限公司 偏光對位檢測裝置及檢測方法
JP6979391B2 (ja) * 2018-07-11 2021-12-15 株式会社日立製作所 距離測定装置、距離測定方法、及び立体形状測定装置
DE112019006721T5 (de) * 2019-03-19 2021-10-28 Murata Manufacturing Co., Ltd. Optische vorrichtung
KR102584252B1 (ko) * 2019-06-10 2023-10-05 삼성디스플레이 주식회사 레이저 어닐 장치
TWI728831B (zh) * 2019-08-14 2021-05-21 香港商立景創新有限公司 可對焦成像裝置
JP7469867B2 (ja) * 2019-11-26 2024-04-17 三星電子株式会社 エリプソメータ及び半導体装置の検査装置
US12326588B2 (en) 2020-01-30 2025-06-10 Lawrence Livermore National Security, Llc Polarization manipulation of free-space electromagnetic radiation fields
TWI773067B (zh) * 2021-01-04 2022-08-01 財團法人工業技術研究院 雷射光路之調校方法與雷射光路之調校裝置
US12467742B2 (en) 2021-02-03 2025-11-11 Tokyo Electron Limited Film thickness analysis method, film thickness analysis device and storage medium
US12482377B2 (en) 2022-05-05 2025-11-25 Fernand Brunschwig Polyhedral optical conduit
USD1100636S1 (en) 2022-06-22 2025-11-04 Fernand Brunschwig Polyhedral optical conduit
DE102023119826A1 (de) * 2023-07-26 2025-01-30 TRUMPF Lasersystems for Semiconductor Manufacturing SE Depolarisations-Kompensator und optisches System

Family Cites Families (116)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2465241A1 (fr) * 1979-09-10 1981-03-20 Thomson Csf Dispositif illuminateur destine a fournir un faisceau d'eclairement a distribution d'intensite ajustable et systeme de transfert de motifs comprenant un tel dispositif
US4744615A (en) * 1986-01-29 1988-05-17 International Business Machines Corporation Laser beam homogenizer
JP2527807B2 (ja) * 1989-05-09 1996-08-28 住友大阪セメント株式会社 光学的連想識別装置
JP2995820B2 (ja) * 1990-08-21 1999-12-27 株式会社ニコン 露光方法及び方法，並びにデバイス製造方法
US7656504B1 (en) * 1990-08-21 2010-02-02 Nikon Corporation Projection exposure apparatus with luminous flux distribution
US6710855B2 (en) * 1990-11-15 2004-03-23 Nikon Corporation Projection exposure apparatus and method
US6252647B1 (en) * 1990-11-15 2001-06-26 Nikon Corporation Projection exposure apparatus
KR950004968B1 (ko) * 1991-10-15 1995-05-16 가부시키가이샤 도시바 투영노광 장치
JP2866243B2 (ja) * 1992-02-10 1999-03-08 三菱電機株式会社 投影露光装置及び半導体装置の製造方法
US5312513A (en) * 1992-04-03 1994-05-17 Texas Instruments Incorporated Methods of forming multiple phase light modulators
JPH06188169A (ja) * 1992-08-24 1994-07-08 Canon Inc 結像方法及び該方法を用いる露光装置及び該方法を用いるデバイス製造方法
US6404482B1 (en) * 1992-10-01 2002-06-11 Nikon Corporation Projection exposure method and apparatus
US5459000A (en) * 1992-10-14 1995-10-17 Canon Kabushiki Kaisha Image projection method and device manufacturing method using the image projection method
JP2698521B2 (ja) * 1992-12-14 1998-01-19 キヤノン株式会社 反射屈折型光学系及び該光学系を備える投影露光装置
US5739898A (en) * 1993-02-03 1998-04-14 Nikon Corporation Exposure method and apparatus
JPH06244082A (ja) * 1993-02-19 1994-09-02 Nikon Corp 投影露光装置
JP3463335B2 (ja) * 1994-02-17 2003-11-05 株式会社ニコン 投影露光装置
US6304317B1 (en) * 1993-07-15 2001-10-16 Nikon Corporation Projection apparatus and method
JP3099933B2 (ja) * 1993-12-28 2000-10-16 株式会社東芝 露光方法及び露光装置
US20020080338A1 (en) * 1994-03-29 2002-06-27 Nikon Corporation Projection exposure apparatus
US5453814A (en) * 1994-04-13 1995-09-26 Nikon Precision Inc. Illumination source and method for microlithography
JPH088177A (ja) * 1994-04-22 1996-01-12 Canon Inc 投影露光装置及びそれを用いたデバイスの製造方法
US5631721A (en) * 1995-05-24 1997-05-20 Svg Lithography Systems, Inc. Hybrid illumination system for use in photolithography
US5815247A (en) * 1995-09-21 1998-09-29 Siemens Aktiengesellschaft Avoidance of pattern shortening by using off axis illumination with dipole and polarizing apertures
DE19535392A1 (de) * 1995-09-23 1997-03-27 Zeiss Carl Fa Radial polarisationsdrehende optische Anordnung und Mikrolithographie-Projektionsbelichtungsanlage damit
JPH1079337A (ja) * 1996-09-04 1998-03-24 Nikon Corp 投影露光装置
DE19781041B4 (de) * 1996-10-08 2010-02-18 Citizen Holdings Co., Ltd., Nishitokyo Optische Vorrichtung
CN1144263C (zh) * 1996-11-28 2004-03-31 株式会社尼康 曝光装置以及曝光方法
US6208407B1 (en) * 1997-12-22 2001-03-27 Asm Lithography B.V. Method and apparatus for repetitively projecting a mask pattern on a substrate, using a time-saving height measurement
DE19807120A1 (de) * 1998-02-20 1999-08-26 Zeiss Carl Fa Optisches System mit Polarisationskompensator
DE69931690T2 (de) * 1998-04-08 2007-06-14 Asml Netherlands B.V. Lithographischer Apparat
US6238063B1 (en) * 1998-04-27 2001-05-29 Nikon Corporation Illumination optical apparatus and projection exposure apparatus
DE19829612A1 (de) * 1998-07-02 2000-01-05 Zeiss Carl Fa Beleuchtungssystem der Mikrolithographie mit Depolarisator
US6031658A (en) * 1998-09-25 2000-02-29 University Of Central Florida Digital control polarization based optical scanner
US6406148B1 (en) * 1998-12-31 2002-06-18 Texas Instruments Incorporated Electronic color switching in field sequential video displays
ATE431619T1 (de) * 1999-01-06 2009-05-15 Nikon Corp Verfahren zur herstellung eines optischen projektionssystems
JP2001100311A (ja) * 1999-07-23 2001-04-13 Seiko Epson Corp プロジェクタ
WO2001023933A1 (en) * 1999-09-29 2001-04-05 Nikon Corporation Projection optical system
US6361909B1 (en) * 1999-12-06 2002-03-26 Industrial Technology Research Institute Illumination aperture filter design using superposition
KR20010085493A (ko) * 2000-02-25 2001-09-07 시마무라 기로 노광장치, 그 조정방법, 및 상기 노광장치를 이용한디바이스 제조방법
JP2001264696A (ja) * 2000-03-16 2001-09-26 Canon Inc 照明光学系及びそれを備えた露光装置
JP4689064B2 (ja) * 2000-03-30 2011-05-25 キヤノン株式会社 露光装置およびデバイス製造方法
JP3927753B2 (ja) * 2000-03-31 2007-06-13 キヤノン株式会社 露光装置及びデバイス製造方法
DE60124524T2 (de) * 2000-04-25 2007-03-08 Asml Holding, N.V. Optisches reduktionssystem mit kontrolle der belichtungspolarisation
US6522483B2 (en) * 2000-04-25 2003-02-18 Silicon Valley Group, Inc. Optical reduction system with elimination of reticle diffraction induced bias
JP3645801B2 (ja) * 2000-08-24 2005-05-11 ペンタックス株式会社 ビーム列検出方法および検出用位相フィルター
WO2002031570A1 (en) 2000-10-10 2002-04-18 Nikon Corporation Method of evaluating imaging performance
SE0100336L (sv) * 2001-02-05 2002-08-06 Micronic Laser Systems Ab Adresseringsmetod och apparat som använder densamma tekniskt område
EP1384117A2 (en) * 2001-04-24 2004-01-28 Canon Kabushiki Kaisha Exposure method and apparatus
JP3780873B2 (ja) 2001-05-01 2006-05-31 ソニー株式会社 照明装置
DE10124803A1 (de) * 2001-05-22 2002-11-28 Zeiss Carl Polarisator und Mikrolithographie-Projektionsanlage mit Polarisator
US6737662B2 (en) * 2001-06-01 2004-05-18 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method, device manufactured thereby, control system, computer program, and computer program product
JPWO2002103766A1 (ja) * 2001-06-13 2004-10-07 株式会社ニコン 走査露光方法及び走査型露光装置、並びにデバイス製造方法
CN1393702A (zh) * 2001-06-26 2003-01-29 山东新光量子科技股份有限公司 一种偏光分束棱镜
US6831731B2 (en) * 2001-06-28 2004-12-14 Nikon Corporation Projection optical system and an exposure apparatus with the projection optical system
US6727992B2 (en) * 2001-07-06 2004-04-27 Zygo Corporation Method and apparatus to reduce effects of sheared wavefronts on interferometric phase measurements
US6788389B2 (en) * 2001-07-10 2004-09-07 Nikon Corporation Production method of projection optical system
JP2003068600A (ja) * 2001-08-22 2003-03-07 Canon Inc 露光装置、および基板チャックの冷却方法
TW554411B (en) * 2001-08-23 2003-09-21 Nikon Corp Exposure apparatus
US6970232B2 (en) * 2001-10-30 2005-11-29 Asml Netherlands B.V. Structures and methods for reducing aberration in integrated circuit fabrication systems
JP2003202523A (ja) * 2001-11-02 2003-07-18 Nec Viewtechnology Ltd 偏光ユニット、該偏光ユニットを用いた偏光照明装置及び該偏光照明装置を用いた投写型表示装置
US6577379B1 (en) * 2001-11-05 2003-06-10 Micron Technology, Inc. Method and apparatus for shaping and/or orienting radiation irradiating a microlithographic substrate
US6900915B2 (en) * 2001-11-14 2005-05-31 Ricoh Company, Ltd. Light deflecting method and apparatus efficiently using a floating mirror
TW567406B (en) * 2001-12-12 2003-12-21 Nikon Corp Diffraction optical device, refraction optical device, illuminating optical device, exposure system and exposure method
US20050134825A1 (en) * 2002-02-08 2005-06-23 Carl Zeiss Smt Ag Polarization-optimized illumination system
JP2003257812A (ja) 2002-02-27 2003-09-12 Nikon Corp 結像光学系の評価方法、結像光学系の調整方法、露光装置および露光方法
JP4352458B2 (ja) * 2002-03-01 2009-10-28 株式会社ニコン 投影光学系の調整方法、予測方法、評価方法、調整方法、露光方法及び露光装置、露光装置の製造方法、プログラム並びにデバイス製造方法
US20050094268A1 (en) * 2002-03-14 2005-05-05 Carl Zeiss Smt Ag Optical system with birefringent optical elements
JP3950732B2 (ja) * 2002-04-23 2007-08-01 キヤノン株式会社 照明光学系、照明方法及び露光装置
JP4333078B2 (ja) * 2002-04-26 2009-09-16 株式会社ニコン 投影光学系、該投影光学系を備えた露光装置および該投影光学系を用いた露光方法並びにデバイス製造方法
US20050095749A1 (en) * 2002-04-29 2005-05-05 Mathias Krellmann Device for protecting a chip and method for operating a chip
TW200307179A (en) * 2002-05-27 2003-12-01 Nikon Corp Lighting device, exposing device and exposing method
JP4198528B2 (ja) * 2002-05-31 2008-12-17 エーエスエムエル ネザーランズ ビー．ブイ． 光学エレメントを組み立てる部品のキット、光学エレメントを組み立てる方法、光学エレメント、リソグラフィ装置、およびデバイス製造法
JP2004051717A (ja) * 2002-07-17 2004-02-19 Mitsubishi Heavy Ind Ltd バイオマスのガス化装置
JP4095376B2 (ja) * 2002-08-28 2008-06-04 キヤノン株式会社 露光装置及び方法、並びに、デバイス製造方法
JP2004104654A (ja) * 2002-09-12 2004-04-02 Ricoh Co Ltd 画像読取装置
JP2004111579A (ja) * 2002-09-17 2004-04-08 Canon Inc 露光方法及び装置
KR100480620B1 (ko) * 2002-09-19 2005-03-31 삼성전자주식회사 마이크로 미러 어레이를 구비한 노광 장치 및 이를 이용한노광 방법
JP3958163B2 (ja) * 2002-09-19 2007-08-15 キヤノン株式会社 露光方法
US6844927B2 (en) * 2002-11-27 2005-01-18 Kla-Tencor Technologies Corporation Apparatus and methods for removing optical abberations during an optical inspection
TW200412617A (en) * 2002-12-03 2004-07-16 Nikon Corp Optical illumination device, method for adjusting optical illumination device, exposure device and exposure method
EP1429190B1 (en) * 2002-12-10 2012-05-09 Canon Kabushiki Kaisha Exposure apparatus and method
US6891655B2 (en) * 2003-01-02 2005-05-10 Micronic Laser Systems Ab High energy, low energy density, radiation-resistant optics used with micro-electromechanical devices
EP2157480B1 (en) * 2003-04-09 2015-05-27 Nikon Corporation Exposure method and apparatus, and device manufacturing method
US6842223B2 (en) * 2003-04-11 2005-01-11 Nikon Precision Inc. Enhanced illuminator for use in photolithographic systems
TW200507055A (en) * 2003-05-21 2005-02-16 Nikon Corp Polarized cancellation element, illumination device, exposure device, and exposure method
JP2005012190A (ja) 2003-05-23 2005-01-13 Nikon Corp 結像光学系の評価方法、結像光学系の調整方法、露光装置および露光方法
JP4323903B2 (ja) * 2003-09-12 2009-09-02 キヤノン株式会社 照明光学系及びそれを用いた露光装置
US7408616B2 (en) * 2003-09-26 2008-08-05 Carl Zeiss Smt Ag Microlithographic exposure method as well as a projection exposure system for carrying out the method
ATE396428T1 (de) * 2003-09-26 2008-06-15 Zeiss Carl Smt Ag Belichtungsverfahren sowie projektions- belichtungssystem zur ausführung des verfahrens
US6970233B2 (en) * 2003-12-03 2005-11-29 Texas Instruments Incorporated System and method for custom-polarized photolithography illumination
EP1716457B9 (en) * 2004-01-16 2012-04-04 Carl Zeiss SMT GmbH Projection system with a polarization-modulating element having a variable thickness profile
US20070019179A1 (en) * 2004-01-16 2007-01-25 Damian Fiolka Polarization-modulating optical element
TWI494972B (zh) 2004-02-06 2015-08-01 尼康股份有限公司 偏光變換元件、光學照明裝置、曝光裝置以及曝光方法
JP4693088B2 (ja) * 2004-02-20 2011-06-01 株式会社ニコン 照明光学装置、露光装置、および露光方法
JP5159027B2 (ja) * 2004-06-04 2013-03-06 キヤノン株式会社 照明光学系及び露光装置
US7283209B2 (en) * 2004-07-09 2007-10-16 Carl Zeiss Smt Ag Illumination system for microlithography
EP1621930A3 (en) * 2004-07-29 2011-07-06 Carl Zeiss SMT GmbH Illumination system for a microlithographic projection exposure apparatus
JP4599936B2 (ja) * 2004-08-17 2010-12-15 株式会社ニコン 照明光学装置、照明光学装置の調整方法、露光装置、および露光方法
US7245353B2 (en) * 2004-10-12 2007-07-17 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method
GB2419208A (en) * 2004-10-18 2006-04-19 Qinetiq Ltd Optical correlation employing an optical bit delay
US7271874B2 (en) * 2004-11-02 2007-09-18 Asml Holding N.V. Method and apparatus for variable polarization control in a lithography system
JP2006179516A (ja) * 2004-12-20 2006-07-06 Toshiba Corp 露光装置、露光方法及び半導体装置の製造方法
US7312852B2 (en) * 2004-12-28 2007-12-25 Asml Netherlands B.V. Polarized radiation in lithographic apparatus and device manufacturing method
US7345740B2 (en) * 2004-12-28 2008-03-18 Asml Netherlands B.V. Polarized radiation in lithographic apparatus and device manufacturing method
TWI453795B (zh) * 2005-01-21 2014-09-21 尼康股份有限公司 照明光學裝置、曝光裝置、曝光方法以及元件製造方法
US7317512B2 (en) * 2005-07-11 2008-01-08 Asml Netherlands B.V. Different polarization in cross-section of a radiation beam in a lithographic apparatus and device manufacturing method
US20070058151A1 (en) * 2005-09-13 2007-03-15 Asml Netherlands B.V. Optical element for use in lithography apparatus and method of conditioning radiation beam
JP2008041710A (ja) * 2006-08-01 2008-02-21 Fujitsu Ltd 照明光学装置、露光方法及び設計方法
US8451427B2 (en) * 2007-09-14 2013-05-28 Nikon Corporation Illumination optical system, exposure apparatus, optical element and manufacturing method thereof, and device manufacturing method
US20090091730A1 (en) * 2007-10-03 2009-04-09 Nikon Corporation Spatial light modulation unit, illumination apparatus, exposure apparatus, and device manufacturing method
KR101562073B1 (ko) * 2007-10-16 2015-10-21 가부시키가이샤 니콘 조명 광학 시스템, 노광 장치 및 디바이스 제조 방법
US8379187B2 (en) * 2007-10-24 2013-02-19 Nikon Corporation Optical unit, illumination optical apparatus, exposure apparatus, and device manufacturing method
US9116346B2 (en) * 2007-11-06 2015-08-25 Nikon Corporation Illumination apparatus, illumination method, exposure apparatus, and device manufacturing method
US20110037962A1 (en) * 2009-08-17 2011-02-17 Nikon Corporation Polarization converting unit, illumination optical system, exposure apparatus, and device manufacturing method
US20110205519A1 (en) * 2010-02-25 2011-08-25 Nikon Corporation Polarization converting unit, illumination optical system, exposure apparatus, and device manufacturing method

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EP3153925A3 (en) 2017-05-03
CN101788721B (zh) 2012-12-05
TWI453795B (zh) 2014-09-21
KR101332066B1 (ko) 2013-11-22
IL182064A0 (en) 2007-07-24
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KR20160088960A (ko) 2016-07-26
HK1144840A1 (en) 2011-03-11
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TW200923418A (en) 2009-06-01
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KR20150060992A (ko) 2015-06-03
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WO2006077849A1 (ja) 2006-07-27
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CN101866058B (zh) 2013-12-04
CN101164142B (zh) 2010-05-19
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