ATE431619T1 - Verfahren zur herstellung eines optischen projektionssystems - Google Patents

Verfahren zur herstellung eines optischen projektionssystems

Info

Publication number
ATE431619T1
ATE431619T1 AT00900129T AT00900129T ATE431619T1 AT E431619 T1 ATE431619 T1 AT E431619T1 AT 00900129 T AT00900129 T AT 00900129T AT 00900129 T AT00900129 T AT 00900129T AT E431619 T1 ATE431619 T1 AT E431619T1
Authority
AT
Austria
Prior art keywords
optical
birefringence
projection
optical system
axis
Prior art date
Application number
AT00900129T
Other languages
English (en)
Inventor
Hiroyuki Hiraiwa
Issey Tanaka
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Application granted granted Critical
Publication of ATE431619T1 publication Critical patent/ATE431619T1/de

Links

Classifications

    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B13/00Optical objectives specially designed for the purposes specified below
    • G02B13/24Optical objectives specially designed for the purposes specified below for reproducing or copying at short object distances
    • G02B13/26Optical objectives specially designed for the purposes specified below for reproducing or copying at short object distances for reproducing with unit magnification
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591Testing optical components
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00Optical elements other than lenses
    • G02B5/30Polarising elements
    • G02B5/3083Birefringent or phase retarding elements
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70241Optical aspects of refractive lens systems, i.e. comprising only refractive elements
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591Testing optical components
    • G03F7/706Aberration measurement
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
    • G03F7/70958Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
    • G03F7/70958Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
    • G03F7/70966Birefringence

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Epidemiology (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Public Health (AREA)
  • Optics & Photonics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Lenses (AREA)
  • Transition And Organic Metals Composition Catalysts For Addition Polymerization (AREA)
  • Medicines Containing Plant Substances (AREA)
  • Steroid Compounds (AREA)
AT00900129T 1999-01-06 2000-01-06 Verfahren zur herstellung eines optischen projektionssystems ATE431619T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP141699 1999-01-06
PCT/JP2000/000027 WO2000041226A1 (en) 1999-01-06 2000-01-06 Projection optical system, method for producing the same, and projection exposure apparatus using the same

Publications (1)

Publication Number Publication Date
ATE431619T1 true ATE431619T1 (de) 2009-05-15

Family

ID=11500877

Family Applications (1)

Application Number Title Priority Date Filing Date
AT00900129T ATE431619T1 (de) 1999-01-06 2000-01-06 Verfahren zur herstellung eines optischen projektionssystems

Country Status (9)

Country Link
US (2) US6366404B1 (de)
EP (1) EP1063684B1 (de)
JP (1) JP4207389B2 (de)
KR (1) KR20010088279A (de)
CN (1) CN1293822A (de)
AT (1) ATE431619T1 (de)
AU (1) AU1891200A (de)
DE (1) DE60042186D1 (de)
WO (1) WO2000041226A1 (de)

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JP2003309059A (ja) * 2002-04-17 2003-10-31 Nikon Corp 投影光学系、その製造方法、露光装置および露光方法
JP4333078B2 (ja) * 2002-04-26 2009-09-16 株式会社ニコン 投影光学系、該投影光学系を備えた露光装置および該投影光学系を用いた露光方法並びにデバイス製造方法
US7154669B2 (en) * 2002-08-05 2006-12-26 Asml Holding N.V. Method and system for correction of intrinsic birefringence in UV microlithography
US7072102B2 (en) 2002-08-22 2006-07-04 Asml Netherlands B.V. Methods for reducing polarization aberration in optical systems
WO2004023172A1 (de) * 2002-09-03 2004-03-18 Carl Zeiss Smt Ag Optimierverfahren für ein objektiv mit fluorid-kristall-linsen sowie objektiv mit fluorid-kristall-linsen
TW200412617A (en) * 2002-12-03 2004-07-16 Nikon Corp Optical illumination device, method for adjusting optical illumination device, exposure device and exposure method
EP2157480B1 (de) * 2003-04-09 2015-05-27 Nikon Corporation Belichtungsverfahren und -vorrichtung sowie Herstellungsverfahren für eine Vorrichtung
DE10317958B4 (de) * 2003-04-17 2005-09-08 Hilti Ag Vorrichtung zum Erzeugen und Projizieren von Lichtmarken
DE10324206A1 (de) * 2003-05-28 2004-12-23 Carl Zeiss Smt Ag Projektionsbelichtungsanlage
AU2003304216A1 (en) * 2003-06-18 2005-01-04 Carl Zeiss Smt Ag Projection lens and method for selection of optical materials in such a lens
TWI609409B (zh) * 2003-10-28 2017-12-21 尼康股份有限公司 照明光學裝置、曝光裝置、曝光方法以及元件製造方法
TWI519819B (zh) * 2003-11-20 2016-02-01 尼康股份有限公司 光束變換元件、光學照明裝置、曝光裝置、以及曝光方法
EP1716457B9 (de) 2004-01-16 2012-04-04 Carl Zeiss SMT GmbH Projektionssystem mit einem polarisationsmodulierenden optischen Element mit variabler Dicke
US8270077B2 (en) 2004-01-16 2012-09-18 Carl Zeiss Smt Gmbh Polarization-modulating optical element
US20070019179A1 (en) * 2004-01-16 2007-01-25 Damian Fiolka Polarization-modulating optical element
TWI395068B (zh) * 2004-01-27 2013-05-01 尼康股份有限公司 光學系統、曝光裝置以及曝光方法
TWI494972B (zh) 2004-02-06 2015-08-01 尼康股份有限公司 偏光變換元件、光學照明裝置、曝光裝置以及曝光方法
US7303841B2 (en) * 2004-03-26 2007-12-04 Taiwan Semiconductor Manufacturing Company Repair of photolithography masks by sub-wavelength artificial grating technology
JP4776891B2 (ja) * 2004-04-23 2011-09-21 キヤノン株式会社 照明光学系、露光装置、及びデバイス製造方法
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US20090195876A1 (en) * 2005-01-05 2009-08-06 Carl Zeiss Smt Ag Method for describing a retardation distribution in a microlithographic projection exposure apparatus
TWI453795B (zh) * 2005-01-21 2014-09-21 尼康股份有限公司 照明光學裝置、曝光裝置、曝光方法以及元件製造方法
JP2006279017A (ja) * 2005-03-02 2006-10-12 Canon Inc 露光装置及び方法、計測装置、並びに、デバイス製造方法
JPWO2009044834A1 (ja) * 2007-10-01 2011-02-10 株式会社ニコン 偏光補償光学系及びこの光学系に用いられる偏光補償光学素子
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Also Published As

Publication number Publication date
EP1063684B1 (de) 2009-05-13
JP4207389B2 (ja) 2009-01-14
US20020085176A1 (en) 2002-07-04
DE60042186D1 (de) 2009-06-25
US6583931B2 (en) 2003-06-24
AU1891200A (en) 2000-07-24
EP1063684A4 (de) 2005-07-27
US6366404B1 (en) 2002-04-02
WO2000041226A1 (en) 2000-07-13
EP1063684A1 (de) 2000-12-27
CN1293822A (zh) 2001-05-02
KR20010088279A (ko) 2001-09-26

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