ATE445028T1 - Verfahren zur herstellung eines sputterfilms - Google Patents

Verfahren zur herstellung eines sputterfilms

Info

Publication number
ATE445028T1
ATE445028T1 AT02711344T AT02711344T ATE445028T1 AT E445028 T1 ATE445028 T1 AT E445028T1 AT 02711344 T AT02711344 T AT 02711344T AT 02711344 T AT02711344 T AT 02711344T AT E445028 T1 ATE445028 T1 AT E445028T1
Authority
AT
Austria
Prior art keywords
film
deposition
magnetron
producing
sputter film
Prior art date
Application number
AT02711344T
Other languages
English (en)
Inventor
Eiji Shidoji
Eiichi Ando
Tomohiro Yamada
Takahiro Mashimo
Original Assignee
Asahi Glass Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Glass Co Ltd filed Critical Asahi Glass Co Ltd
Application granted granted Critical
Publication of ATE445028T1 publication Critical patent/ATE445028T1/de

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/35Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/352Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50Substrate holders
    • C23C14/505Substrate holders for rotation of the substrates
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54Controlling or regulating the coating process
    • C23C14/542Controlling the film thickness or evaporation rate
    • C23C14/545Controlling the film thickness or evaporation rate using measurement on deposited material
    • C23C14/547Controlling the film thickness or evaporation rate using measurement on deposited material using optical methods
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/568Transferring the substrates through a series of coating stations
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/10Optical coatings produced by application to, or surface treatment of, optical elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32733Means for moving the material to be treated
    • H01J37/32752Means for moving the material to be treated for moving the material across the discharge
    • H01J37/32761Continuous moving
    • H01J37/32779Continuous moving of batches of workpieces
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/34Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405Magnetron sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Physical Vapour Deposition (AREA)
  • Optical Filters (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Magnetic Heads (AREA)
AT02711344T 2001-02-07 2002-02-06 Verfahren zur herstellung eines sputterfilms ATE445028T1 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2001031004 2001-02-07
JP2001220942 2001-07-23
JP2001383069 2001-12-17
PCT/JP2002/000982 WO2002063064A1 (fr) 2001-02-07 2002-02-06 Dispositif de projection et procede pour realiser un film de projection

Publications (1)

Publication Number Publication Date
ATE445028T1 true ATE445028T1 (de) 2009-10-15

Family

ID=27345932

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02711344T ATE445028T1 (de) 2001-02-07 2002-02-06 Verfahren zur herstellung eines sputterfilms

Country Status (7)

Country Link
US (2) US6863785B2 (de)
EP (1) EP1359236B1 (de)
JP (1) JPWO2002063064A1 (de)
CN (1) CN1258616C (de)
AT (1) ATE445028T1 (de)
DE (1) DE60233931D1 (de)
WO (1) WO2002063064A1 (de)

Families Citing this family (56)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1258616C (zh) * 2001-02-07 2006-06-07 旭硝子株式会社 溅射装置及溅射成膜方法
US7749622B2 (en) * 2002-10-22 2010-07-06 Asahi Glass Company, Limited Multilayer film-coated substrate and process for its production
US20040182701A1 (en) * 2003-01-29 2004-09-23 Aashi Glass Company, Limited Sputtering apparatus, a mixed film produced by the sputtering apparatus and a multilayer film including the mixed film
JP4547489B2 (ja) * 2003-05-01 2010-09-22 株式会社昭和真空 膜厚計測装置搭載の光学薄膜形成用装置及び光学薄膜の成膜方法
JP4904165B2 (ja) * 2004-01-15 2012-03-28 デポジッション サイエンス インク 堆積工程中に薄膜の光学的特性を監視する方法および装置
US7301149B2 (en) * 2004-05-06 2007-11-27 The Board Of Trustees Of The University Of Illinois Apparatus and method for determining a thickness of a deposited material
PL1598660T3 (pl) * 2004-05-22 2007-04-30 Applied Mat Gmbh & Co Kg Powlekarka z urządzeniem pomiarowym do określania właściwości optycznych powlekanych podłoży
JP4547612B2 (ja) * 2004-06-25 2010-09-22 旭硝子株式会社 膜厚制御方法及び装置、並びに光学多層膜の製造方法
GB0421389D0 (en) * 2004-09-25 2004-10-27 Applied Multilayers Ltd Material deposition apparatus and method
DE102005008889B4 (de) * 2005-02-26 2016-07-07 Leybold Optics Gmbh Optisches Monitoringsystem für Beschichtungsprozesse
DE102005010681B4 (de) * 2005-03-09 2016-05-04 Leybold Optics Gmbh Messanordnung zum optischen Monitoring von Beschichtungsprozessen
US7696696B2 (en) * 2005-08-04 2010-04-13 Stc.Unm Magnetron having a transparent cathode and related methods of generating high power microwaves
EP1757373B1 (de) * 2005-08-24 2012-04-11 Brother Kogyo Kabushiki Kaisha Vorrichtung und Verfahren zur Erzeugung von Schichten und Herstellungsverfahren für einen piezoelektrischen Aktuator
JP4800734B2 (ja) * 2005-10-13 2011-10-26 株式会社シンクロン 薄膜形成装置及び薄膜形成方法
JP2007154242A (ja) * 2005-12-02 2007-06-21 National Institute For Materials Science 酸化物の混合膜の製造方法
JP2007291420A (ja) * 2006-04-21 2007-11-08 Canon Inc スパッタ装置
DK1970465T3 (da) * 2007-03-13 2013-10-07 Jds Uniphase Corp Fremgangsmåde og system til katodeforstøvning til aflejring af et lag, der består af en blanding af materialer og har et på forhånd defineret brydningsindeks
JP2009007636A (ja) * 2007-06-28 2009-01-15 Sony Corp 低屈折率膜及びその成膜方法、並びに反射防止膜
US9039871B2 (en) 2007-11-16 2015-05-26 Advanced Energy Industries, Inc. Methods and apparatus for applying periodic voltage using direct current
US8133359B2 (en) * 2007-11-16 2012-03-13 Advanced Energy Industries, Inc. Methods and apparatus for sputtering deposition using direct current
US20100047594A1 (en) * 2008-08-20 2010-02-25 Aharon Inspektor Equipment and method for physical vapor deposition
JP5163422B2 (ja) * 2008-10-23 2013-03-13 株式会社ニコン 成膜装置および成膜方法
CN101899642B (zh) * 2009-05-25 2013-03-20 鸿富锦精密工业(深圳)有限公司 镀膜装置
JP4878632B2 (ja) * 2009-07-03 2012-02-15 株式会社シンクロン 光学式膜厚計及び光学式膜厚計を備えた薄膜形成装置
WO2011090717A1 (en) * 2009-12-28 2011-07-28 Gvd Corporation Coating methods, systems, and related articles
KR20120102105A (ko) * 2010-01-26 2012-09-17 캐논 아네르바 가부시키가이샤 필름 형성 방법, 필름 형성 장치 및 필름 형성 장치를 위한 제어 유닛
US8758580B2 (en) * 2010-08-23 2014-06-24 Vaeco Inc. Deposition system with a rotating drum
JP5800414B2 (ja) * 2011-06-01 2015-10-28 株式会社アルバック 成膜方法
WO2012168709A2 (en) * 2011-06-07 2012-12-13 Power Vision Limited Improvements to the application of coating materials
CN102978577A (zh) * 2011-09-06 2013-03-20 鸿富锦精密工业(深圳)有限公司 中频磁控溅射镀膜装置
US8785235B2 (en) * 2012-02-10 2014-07-22 Tsmc Solar Ltd. Apparatus and method for producing solar cells
US20140131198A1 (en) * 2012-11-09 2014-05-15 Tsmc Solar Ltd. Solar cell formation apparatus and method
US20140272684A1 (en) 2013-03-12 2014-09-18 Applied Materials, Inc. Extreme ultraviolet lithography mask blank manufacturing system and method of operation therefor
TW201502302A (zh) * 2013-07-15 2015-01-16 Metal Ind Res & Dev Ct 可微調整製程參數之濺鍍製程控制系統及其方法
DE102013221029A1 (de) * 2013-10-16 2015-04-16 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren und Vorrichtung zur Herstellung uniformer Schichten auf bewegten Substraten und derart hergestellte Schichten
JP6218566B2 (ja) * 2013-11-15 2017-10-25 株式会社オプトラン 薄膜形成装置および薄膜形成方法
TW201540858A (zh) * 2014-02-17 2015-11-01 Gtat Corp 用以產生金屬氧化物塗層的系統和方法
JP6707559B2 (ja) * 2015-03-31 2020-06-10 ビューラー アルツェナウ ゲゼルシャフト ミット ベシュレンクテル ハフツングBuehler Alzenau GmbH 被覆された基板の製造方法
CN105274487B (zh) * 2015-11-30 2018-01-23 深圳市美思先端电子有限公司 红外滤光片镀膜的工艺方法、装置及得到的红外滤光片
JP6852987B2 (ja) * 2016-06-07 2021-03-31 日東電工株式会社 多層膜の成膜方法
TW201827633A (zh) * 2016-09-27 2018-08-01 美商康寧公司 用於減少電弧之濺射的裝置及方法
DE102016125273A1 (de) * 2016-12-14 2018-06-14 Schneider Gmbh & Co. Kg Anlage, Verfahren und Träger zur Beschichtung von Brillengläsern
GB2561865A (en) * 2017-04-25 2018-10-31 Univ Of The West Of Scotland Apparatus and methods for depositing durable optical coatings
CN106995916A (zh) * 2017-06-01 2017-08-01 南京沪友冶金机械制造有限公司 柔性磁控溅射镀膜横向均匀性控制装置
CN107354443B (zh) * 2017-07-26 2019-10-11 中国电子科技集团公司第五十五研究所 一种调节磁控溅射镀膜均匀性的装置
RU182457U1 (ru) * 2017-12-27 2018-08-17 Общество с ограниченной ответственностью "Накопители Энергии Супер Конденсаторы" (ООО "НЭСК") Установка для вакуумного магнетронного напыления тонких пленок
KR102399748B1 (ko) * 2018-10-01 2022-05-19 주식회사 테토스 입체형 대상물 표면의 금속막 증착 장치
KR102396555B1 (ko) * 2019-04-26 2022-05-11 주식회사 테토스 증착 부착력이 개선된 기판 측면부 증착 장치
US11781214B2 (en) * 2019-07-30 2023-10-10 Applied Materials, Inc. Differential capacitive sensors for in-situ film thickness and dielectric constant measurement
CN110699653B (zh) * 2019-10-30 2021-08-03 哈尔滨工业大学 一种适用于多面共体反射镜的金属薄膜制备装置及方法
JP7390997B2 (ja) * 2020-09-15 2023-12-04 芝浦メカトロニクス株式会社 成膜装置
CN112795891B (zh) * 2020-12-22 2022-10-21 北京北方华创微电子装备有限公司 半导体工艺设备
CN113249699B (zh) * 2021-05-13 2022-11-04 沈阳仪表科学研究院有限公司 基于磁控溅射技术制备高精密波长渐变滤光片的方法及其采用的装置
CN113816614A (zh) * 2021-09-29 2021-12-21 中建材科创新技术研究院(山东)有限公司 一种彩色玻璃磁控溅射制备系统及方法
CN115595545B (zh) * 2022-09-27 2024-05-17 成都晨发泰达航空科技股份有限公司 一种eb-pvd涂层用的定位工装、加工设备及加工方法
DE102023104397A1 (de) * 2023-02-23 2024-08-29 VON ARDENNE Asset GmbH & Co. KG Prozessanordnung

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3303117A (en) * 1964-12-23 1967-02-07 Ibm Process for cathodically sputtering a ferromagnetic thin film of a nickeliron-molybdenum alloy
JPS5539625B2 (de) 1973-03-07 1980-10-13
JPS55500588A (de) * 1978-08-18 1980-09-04
US4294678A (en) * 1979-11-28 1981-10-13 Coulter Systems Corporation Apparatus and method for preventing contamination of sputtering targets
US4591418A (en) * 1984-10-26 1986-05-27 The Parker Pen Company Microlaminated coating
JPH0768614B2 (ja) 1990-03-05 1995-07-26 宇部興産株式会社 カルーセル形スパツタリング装置およびそのスパツタリング方法
JPH04173971A (ja) * 1990-11-02 1992-06-22 Nec Corp マグネトロン型スパッタ装置
US5154810A (en) * 1991-01-29 1992-10-13 Optical Coating Laboratory, Inc. Thin film coating and method
JPH0521347A (ja) * 1991-07-11 1993-01-29 Canon Inc スパツタリング装置
DE4204999A1 (de) 1991-11-26 1993-08-26 Leybold Ag Verfahren und vorrichtung zum beschichten eines substrats, insbesondere mit elektrisch nichtleitenden schichten
DE4138794A1 (de) 1991-11-26 1993-05-27 Leybold Ag Verfahren und vorrichtung zum beschichten eines substrats, insbesondere mit elektrisch nichtleitenden schichten
DE4237517A1 (de) 1992-11-06 1994-05-11 Leybold Ag Vorrichtung zum Beschichten eines Substrats, insbesondere mit elektrisch nichtleitenden Schichten
JPH06207269A (ja) * 1993-01-11 1994-07-26 Hitachi Ltd 薄膜の形成方法およびスパッタリング装置
JPH07109569A (ja) * 1993-10-08 1995-04-25 Shincron:Kk 薄膜形成方法
JPH08325725A (ja) * 1995-05-26 1996-12-10 Sony Corp スパッタ装置及びスパッタ方法
US6217720B1 (en) 1997-06-03 2001-04-17 National Research Council Of Canada Multi-layer reactive sputtering method with reduced stabilization time
JPH1174176A (ja) * 1997-08-29 1999-03-16 Sony Corp 半導体装置の製造方法、膜厚最適化装置および膜厚最適化方法
GB2331764B (en) 1997-12-01 2002-06-26 Ca Nat Research Council Sputtering method and apparatus with optical monitoring
DE19836125C2 (de) * 1998-08-10 2001-12-06 Leybold Systems Gmbh Zerstäubungsvorrichtung mit einer Kathode mit Permanentmagnetanordnung
US6338777B1 (en) * 1998-10-23 2002-01-15 International Business Machines Corporation Method and apparatus for sputtering thin films
JP2001003166A (ja) 1999-04-23 2001-01-09 Nippon Sheet Glass Co Ltd 基体表面に被膜を被覆する方法およびその方法による基体
US6440280B1 (en) * 2000-06-28 2002-08-27 Sola International, Inc. Multi-anode device and methods for sputter deposition
CN1258616C (zh) * 2001-02-07 2006-06-07 旭硝子株式会社 溅射装置及溅射成膜方法
US6563578B2 (en) * 2001-04-02 2003-05-13 Advanced Micro Devices, Inc. In-situ thickness measurement for use in semiconductor processing

Also Published As

Publication number Publication date
DE60233931D1 (de) 2009-11-19
EP1359236A1 (de) 2003-11-05
US20040026240A1 (en) 2004-02-12
US20050121311A1 (en) 2005-06-09
US6863785B2 (en) 2005-03-08
CN1491293A (zh) 2004-04-21
EP1359236A4 (de) 2006-08-09
JPWO2002063064A1 (ja) 2004-06-10
CN1258616C (zh) 2006-06-07
EP1359236B1 (de) 2009-10-07
WO2002063064A1 (fr) 2002-08-15

Similar Documents

Publication Publication Date Title
ATE445028T1 (de) Verfahren zur herstellung eines sputterfilms
ATE545718T1 (de) Verwendung eines targets zur lichtbogenionenplattierung für die herstellung eines hartfilms
WO2005000759A3 (fr) Substrat revetu d’une couche dielectrique et procede et installation pour sa fabrication
DE69307889D1 (de) Verfahren zur herstellung von dünnschichten mit optischen eigenschaften
ATE371046T1 (de) Verfahren zur magnetron-zerstäubung
ATE431619T1 (de) Verfahren zur herstellung eines optischen projektionssystems
DE69937429D1 (de) Verfahren zur Herstellung eines optischen Verzögerungsfilms
TW262537B (de)
ATE354166T1 (de) Verfahren zur herstellung eines plattensubstrats und verfahren und vorrichtung zur herstellung einer optischen platte
DE69833226D1 (de) Verfahren zur herstellung einer optischen linse mit oberflächenmikrostruktur und die so hergestellten linsen
ATE367371T1 (de) Verfahren zur herstellung von fluorverbindungen mittels flüssigphasenfluorierung
ATE350679T1 (de) Verfahren und apparat für die herstellung von dünnen schichten
DE60222329D1 (de) Verfahren zur Herstellung eines Lichtwellenleiters
EP2657768A3 (de) Optisch semitransmissiver Film, Photomaskenrohling und Photomaske, und Verfahren zum Entwurf eines optisch semitransmissiven Films
EP1741681A4 (de) Mehrfarbenentwicklungsglasbehälter und herstellungsverfahren dafür
DE69417932D1 (de) Methode zur Herstellung eines optischen Wellenleiters
DE60228746D1 (de) Verfahren zur herstellung von linsen durch polymerisation
DE60132914D1 (de) Niedrigtemperaturverfahren zur herstellung einer antireflexionsbeschichtung
DE69514795D1 (de) Präzisionsbeschichtungsverfahren zur herstellung polymerisierbarer dünnschichten
ATE427367T1 (de) Verfahren zur herstellung einer dunnen schicht von stabilisiertem fluorhaltigen silika, so beschichtetes substrat und so erhaltene ophthalmische linse
DE60037753D1 (de) Sputtertarget, vorbereitungsverfahren dafür und filmherstellendes verfahren
DK0539302T3 (da) Orienterede film af semikrystallinske polyestere, fremgangsmåde til deres fremstilling og deres anvendelse som bærer for magnetiske belægninger
CA2406468A1 (en) Optical product comprising thiol compound
DE69229762D1 (de) Verfahren zur Herstellung dünner Metallfilme
DE50109144D1 (de) Lithographieobjektiv mit einer ersten Linsengruppe, bestehend ausschliesslich aus Linsen positiver Brechkraft und Verfahren zur Herstellung mikrostrukturierter Bauteile mit einem solchen Objektiv

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties