TW584898B - Optical system and exposure apparatus having the optical system - Google Patents
Optical system and exposure apparatus having the optical system Download PDFInfo
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- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
- G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
- G03F7/70966—Birefringence
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Description
584898 A7 _B7 五、發明説明(i " 發明之技術領域 本發明係有關一種光學系統及具備該光學系統之曝光裝 置,特別是關於以照相平版工序製造半導體元件及液晶顯 示元件等的微裝置之際,適合於所使用的曝光裝置之光學 系統。 先前技術 先前技術係使用一種方法,其係在半導體積體電路、液 晶顯示等的電子元件(微裝置)的微小圖案形成之際,將應 該形成的圖案比例放大4〜5倍左右而描繪的光掩模(也稱 做光網)的圖案,使用投影曝光裝置縮小曝光而謄寫至晶 片等的感光性基板(被曝光基板)。在此種投影露光裝置, 為了對應半導體積體電路的細微化,其曝光波長不斷地往 短波長這邊偏移。 目前,雖然曝光波長以KrF準分子雷射的248 nm為主 流,但是更短波長的ArF準分子雷射的1 93 nm也正在進入 實用化階段。此外,也有提案使用提供波長1 5 7 nm的F 2雷 射、波長126 nm的A r2雷射等的被稱為所謂真空紫外區域 的波長帶的光源之投影曝光裝置。再者,因為藉由投影光 學系統的大開口數(NA)化也能夠高解像度化,所以不僅 是為了曝光波長的短波長化的開發,也在開發具有更大的 開口數的投影光學系統。 如此地對於波長短的紫外區域的曝光比,就要限定透過 率、均等性的良好的光學材料(透鏡材料)。在以ArF準分 子雷射為光源的投影光學系統,雖然也能夠使用作為透鏡 -4 - 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公爱) "" "" — 裝 訂584898 A7 _B7 V. INTRODUCTION TO THE INVENTION (TECHNICAL FIELD OF THE INVENTION) The present invention relates to an optical system and an exposure device provided with the optical system, and particularly to a micro device for manufacturing a semiconductor device, a liquid crystal display device, etc. by a photolithography process. It is suitable for the optical system of the exposure device to be used. The prior art The prior art uses a method which is to be formed when the micropatterns of electronic components (microdevices) such as semiconductor integrated circuits and liquid crystal displays are formed. The pattern of a photomask (also known as a light screen) drawn by enlarging the pattern ratio by about 4 to 5 times is reduced by exposure using a projection exposure device and transcribed onto a photosensitive substrate (substrate to be exposed) such as a wafer. In this projection The exposure device, in order to correspond to the miniaturization of semiconductor integrated circuits, its exposure wavelength is constantly shifted to the shorter wavelength. At present, although the exposure wavelength is mainly 248 nm of KrF excimer laser, the shorter wavelength ArF standard The molecular laser 1 93 nm is also entering the practical stage. In addition, there are also proposals to use a wavelength of 1 5 7 nm A projection exposure device for a light source in a wavelength band called a so-called vacuum ultraviolet region, such as an F 2 laser and an A 2 laser with a wavelength of 126 nm. Furthermore, because of the large opening number (NA) of the projection optical system, Since it can achieve high resolution, it is not only for the development of a shorter wavelength for the exposure wavelength, but also for a projection optical system with a larger number of apertures. Thus, for the exposure ratio in the ultraviolet region with a short wavelength, it is necessary to limit the transmittance, Optical material (lens material) with good uniformity. Although it can also be used as a lens in projection optical systems using ArF excimer laser as a light source-This paper is compliant with China National Standard (CNS) A4 (210X 297) Public Love) " " " " — Binding
¢84898 A7 B7 五、發明説明( 材料的合成石英玻璃,然而有使用氟化鈣結晶(螢石)於一 部份的透鏡。另一方面,在以h雷射做為光源的投影光學 系統’能夠使用的透鏡材料實際上被限定於氟化鈣結 (螢石)。 發明所欲解決之誣顥 最近,如此地對於波長短的紫外線,有報告說在立方晶 系列的氟化鈣結晶(螢石),也產生複折射。像在電子元件 的製造所使用的投影光學系統的超級高精度的光學系統, 伴隨著透鏡材料的複折射所產生的象差是致命的問題,實 際上地回避複折射的影響的透鏡構成及透鏡設計的採用為 不可欠缺。 本發明係鑒於前述的課題而所做的發明,其目的在提供 一種光學系統及具備該光學系統之曝光裝置,其係即使使 用例如像是螢石的複折射性的結晶材料,也能夠不實質地 受到複折射的影響而確保良好的光學性能。此外,本發明 之目的並提供一種微裝置之製造方法,其為搭載使用結晶 材料而具有良好光學性能的光學系統的曝光裝置,隨著高 解像度的曝光技術而能夠製造高性能的微裝置。 課題之解決羊段 為了解決上述課題,在本^明的第1個發明,在包含以 屬於立方晶系列的結晶所形成的多數的結晶光學元件的光 學系統, 上述多數的結晶光學元件具備:第1結晶軸與上述光學 系統的光軸被設定為大約一致的結晶光學元件,及第2結 •5 - 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 裝 訂¢ 84898 A7 B7 V. Description of the invention (Material of synthetic quartz glass, but there are some lenses using calcium fluoride crystal (fluorite). On the other hand, in the projection optical system with h laser as the light source ' The lens material that can be used is actually limited to calcium fluoride junction (fluorite). Recently, it is reported that the invention is to solve the problem of short-wavelength ultraviolet rays. Stone), also produces birefringence. The super high-precision optical system like the projection optical system used in the manufacture of electronic components, the aberrations caused by the birefringence of the lens material are a fatal problem, and actually avoid the birefringence. The lens configuration and lens design that are affected by refraction are indispensable. The present invention is an invention made in view of the aforementioned problems, and an object thereof is to provide an optical system and an exposure apparatus including the optical system, which are used even if, for example, an image is used. It is a birefringent crystalline material of fluorite, and can also ensure good optical performance without being substantially affected by birefringence. In addition, the present invention An object of the present invention is to provide a method for manufacturing a microdevice, which is an exposure device equipped with an optical system that uses crystalline materials and has good optical performance. With the high-resolution exposure technology, a high-performance microdevice can be manufactured. In order to solve the above problems, in the first invention of the present invention, in an optical system including a plurality of crystalline optical elements formed by crystals belonging to a cubic crystal series, the plurality of crystalline optical elements include: a first crystal axis and the optical The optical axis of the system is set to approximately the same crystalline optical element, and the second knot • 5-This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) binding
光轴被設足為大约一致的結晶光學 晶軸與上述光學系統的 元件, 上述多數的結晶光學元件Gj,在與上述光抽直交的表面 的特疋的結晶㈣方向,對於在上述表面内的特定的轴 、万向’以上述光軸為中心回轉角度pj而被配置, 對於通過上述多數的m學元件Gj的特定的光線,將 孩特定的光線與上述光轴的方向所成之角度當作^,將 上述特定的光線與上述特定的㈣方向所成之角度當作 0J,及將上述特定的光線的光圖案徑長當作㈣時候, 規疋對於由上述結晶的物性常數α、上述角度p』、上述 角度ej、上述角度0j、及上述光圖案徑長所決定之第工 個-定的偏光的第1個評價#Rj及對於面對第2個—定的偏 光的第2個的評價量Sj , 提供關於上述複數的結晶光學元件的上述第丨個評價量 RJ的總和之第1個總和評價量sRj及關於多數的結晶光學 兀件的上述第2個評價量Sj的總和之第2個總和評價量 SSj,料聚光於上述的光學系統的像表面上或物體表面 上的至少任意1點的成像光束中之光線有特定的關係。 如果根據第1個發明的理想形態,上述第“固評價量⑴為 對於上述第1個一定的偏光的光圖案徑長的變化情報;上 述第2個評價量Sj對於上述第2個一定的偏光的光圖案徑長 的變化情報。此外,理想的是上述第丨個一定的偏光為在 以上述光軸為中心的圓直徑方向具有偏光方向的R偏光; 且上述第2個一定的偏光為在以上述光軸為中心的圓周 584898 A7 B7The optical axis is set to be approximately the same as the crystalline optical crystal axis and the element of the optical system, and the majority of the crystalline optical element Gj is in a specific crystalline 表面 direction on a surface orthogonal to the light, and for the The specific axis and gimbal are arranged with the rotation angle pj centered on the optical axis, and the angle formed by the specific light and the direction of the optical axis is regarded as the specific light passing through the majority of the m-science elements Gj. When ^ is set, the angle formed by the specific light and the specific ㈣ direction is regarded as 0J, and the diameter of the light pattern of the specific light is taken as ㈣. For the physical property constant α, The angle p ", the angle ej, the angle 0j, and the first evaluation of the fixed-polarized light #Rj determined by the diameter of the light pattern and the second evaluation of the second-defined polarized light The evaluation amount Sj provides a total of the first total evaluation amount sRj of the above-mentioned first evaluation amount RJ of the plurality of crystalline optical elements and a total of the second evaluation amount Sj of the majority of the crystalline optical elements. Second evaluation value sum SSj, collecting any material on at least one point on the surface of the optical system or the image of an object surface of the imaging light beam has a specific relationship. According to an ideal form of the first invention, the above-mentioned "solid evaluation amount ⑴" is the change information of the light pattern diameter and length for the first certain polarized light; the second evaluation amount Sj is for the second certain polarized light. Information about the change in the diameter of the light pattern. In addition, it is desirable that the first certain polarized light is R polarized light having a polarization direction in a circle diameter direction centered on the optical axis; and the second certain polarized light is at Circumference around the above optical axis 584898 A7 B7
五、發明説明 向具有偏光方向Θ偏光。再者,上述牿佘沾的化 ^ 工現秤疋的關係,理想的 是包含以下的關係:上述第丨個評價量…的總和對於聚光 於上述的光學系統的像表面上或物體表面上的至少任意i 點的成像光束中之光線有大約相等的關係,上述第2個\總 和評價量ESj對於聚光於上述的光學系統的像表面上或物 體表,面上的至少任意1點的成像光束中之光線有大約相等 的關係,及上述第1個評價量Rj的總和與上述第2個總和評 {貝量Σ S j對於光於上述的光學系統的像表面上或物體表 面上的至少任意1點的成像光束中之光線有大約相等的關 係。 此外,如果根據第1個發明的理想形態,在上述光軸及 結晶軸[111 ]或是與該結晶軸光學上等效的結晶軸被設定 為大約一致的結晶光學元件Gj,上述一定的結晶軸為結晶 軸[-110 ]或是與該結晶軸光學上等效的結晶軸,ω j = 0 j _ pj的時候,上述第1個評價量Rj及上述第2個評價量Sj分別 以下列式子表示。 式子3 · ·V. Description of the invention Polarized light has a polarized direction Θ. Furthermore, the relationship between the above-mentioned chemical and industrial scales desirably includes the following relationship: the sum of the above-mentioned first evaluation amount ... is focused on the image surface or the object surface of the optical system The light rays in the imaging beam of at least any i points are approximately equal. For the above-mentioned second \ sum evaluation value ESj, at least any one point on the image surface or object surface of the optical system The rays in the imaging beam have approximately equal relationships, and the sum of the above-mentioned first evaluation quantity Rj and the above-mentioned second total evaluation {beam quantity Σ S j for light on the image surface or object surface of the above-mentioned optical system The rays in the imaging beam of at least any one point are approximately equal. In addition, according to an ideal form of the first invention, if the optical axis and the crystal axis [111] or a crystal axis optically equivalent to the crystal axis are set to approximately the same crystal optical element Gj, the above-mentioned constant crystal The axis is the crystal axis [-110] or a crystal axis which is optically equivalent to the crystal axis. When ω j = 0 j _ pj, the first evaluation amount Rj and the second evaluation amount Sj are respectively as follows: Expression. Equation 3
Rj= a ><Ljx[56x{l-cos(4 0j)} -32/"2><sin(4 0j)xsin(36L)j)]/192 Sj=axLjx[32x{l-cos(2 0j)} + 64/2xsin(2 0j)xsin(3wj)]/192 再者,如果根據第1個發明的理想形態,在上述光軸及 結晶轴[0 01 ]或是與該結晶轴光學上等效的結晶抽被*又足 為大約一致的結晶光學元件Gj,上述特定的結晶軸為結晶 本紙張尺度適用中國國家標準(CNS) A4规格(210 X 297公爹) 584898 A7 B7 五、發明説明(5 ) 軸[110]或是與該結晶軸光學上等效的結晶軸,coj= 0j-pj 的時候,上述第1個的評價量Rj及上述第2個評價量Sj分別 以下列式子表示。Rj = a > < Ljx [56x {l-cos (4 0j)} -32 / " 2 > < sin (4 0j) xsin (36L) j)] / 192 Sj = axLjx [32x {l- cos (2 0j)} + 64 / 2xsin (2 0j) xsin (3wj)] / 192 Furthermore, according to the ideal form of the first invention, in the above optical axis and crystal axis [0 01] or with the crystal The optically equivalent crystal extraction of the axis is sufficient to be approximately the same as the crystalline optical element Gj. The above specific crystal axis is crystal. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 male father) 584898 A7 B7 Five Explanation of the invention (5) The axis [110] or a crystal axis optically equivalent to the crystal axis, when coj = 0j-pj, the above-mentioned first evaluation amount Rj and the above-mentioned second evaluation amount Sj are respectively less than Column expression.
Rj=axLjx{l-cos(4 0j)}x{-84-12xcos(46;j)}/192 Sj= a xLjx{l-cos(2 0j)}x{-48+48xcos(46;j)}/192 此外,如果根據第1個發明的理想形態,在上述光軸及 結晶軸[011]或是與該結晶軸光學上等效的結晶軸被設定 為大約一致的結晶光學元件Gj,上述特定的結晶軸為結晶 軸[100]或是與該結晶軸光學上等效的結晶軸,ω j == 0 j -pj 的時候,上述第1個的評價量Rj及上述第2個的評價量Sj分 別以下列式子表示。 式子4Rj = axLjx {l-cos (4 0j)} x {-84-12xcos (46; j)} / 192 Sj = a xLjx {l-cos (2 0j)} x {-48 + 48xcos (46; j) } / 192 According to an ideal form of the first invention, if the optical axis and the crystal axis [011] or the crystal axis optically equivalent to the crystal axis are set to approximately the same crystal optical element Gj, the above The specific crystal axis is the crystal axis [100] or a crystal axis which is optically equivalent to the crystal axis. When ω j == 0 j -pj, the above-mentioned first evaluation amount Rj and the above-mentioned second evaluation The quantities Sj are expressed by the following formulas, respectively. Formula 4
Rj= axLjx[{l-cos(4 0j)}x{21-9xcos(4wj)-84xcos(26;j)} + 96xcos(2^j)]/192Rj = axLjx [{l-cos (4 0j)} x {21-9xcos (4wj) -84xcos (26; j)} + 96xcos (2 ^ j)] / 192
Sj= a xLjx[{l-cos(2 0j)} x{12+36xcos(46;j)+48xcos(2gj)} -96xcos(2oj)]/192 此外,如果根據第1個發明的理想形態,上述結晶的物 性常數α,為在形成各結晶光學單元Gj的結晶中於結晶軸 [011 ]或是與該結晶軸光學上等效的結晶軸的方向行進的 光之中,於結晶軸[100]或是與該結晶軸光學上等效的結 晶軸的方向具有偏光方向的光的屈折率η 100,及與在結晶 軸[0-11 ]或是與該結晶軸光學上等效的結晶軸的方向具有 偏光方向有的光的屈折率η 011之差。再者,以光的的波長 為又的時候,上述第1個總和評價量Σ Rj與上述第2個總和 -8- 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公釐) 裝 訂Sj = a xLjx [{l-cos (2 0j)} x {12 + 36xcos (46; j) + 48xcos (2gj)} -96xcos (2oj)] / 192 In addition, according to the ideal form of the first invention, The physical property constant α of the crystal is among the light traveling in the direction of the crystal axis [011] or the crystal axis optically equivalent to the crystal axis in the crystal forming each crystal optical unit Gj, and the crystal axis [100] ] Or the crystal axis is optically equivalent to the direction of the crystal axis and has a refractive index η 100 of the polarization direction of light, and the crystal axis is equivalent to the crystal axis [0-11] or is optically equivalent to the crystal axis. The direction of has a difference in the refractive index η 011 of the light in the polarization direction. In addition, when the wavelength of light is the same, the above-mentioned first total evaluation quantity Σ Rj and the above-mentioned second total -8- This paper size applies the Chinese National Standard (CNS) A4 specification (210X 297 mm) binding
584898 A7584898 A7
評價量ZSj之差的絕對值,理想的是對於聚光於上述的光 學系統的像表面上或物體表面上的至少任意1點的成像光 束中之光線被設定比λ/2小。 再者,如果根據第1個發明的理想形態,以光的的波長 為λ的時候,上述第1個總和評價量Σ Rj與一定的值之差的 絕對值’對於聚光於上述的光學系統的像表面上或物體表 面上的至少任意1點的成像光束中之光線被設定比λ/2小。 此外’以光的的波長為又的時候,理想的是上述第2個總 和評價量Σ Sj與一定之值的差的絕對值,對於聚光於上述 的光學系統的像表面上或物體表面上的至少任意1點的成 像光束中之光線被設定比λ/2小。 此外,如果根據第1個發明的理想形態,上述光學系 統’包含上述光軸及結晶軸[111]或是與該結晶軸光學上 等效的結晶軸被設定為大約一致的Μ (Μ是3以上的整數)片 的結晶光學元件,上述Μ片的結晶光學元件具有在垂直於 上述光軸的面内的結晶軸[1-1〇]或是與該結晶軸光學上等 效的結晶軸的方向以上述光軸為中心互相地大約各(120/Μ) 度分開的旋轉位置關係。 再者,如果根據第1個發明的理想形態,上述光學系 統,包含上述光軸及結晶軸[〇〇 1 ]或是與該結晶軸光學上 等效的結晶軸被設定為大約一致的Ν(Ν是3以上的整數)片 的結晶光學元件,上述Ν片的結晶光學元件具有在垂直於 上述光轴的面内的結晶抽[1 〇 〇 ]或是與該結晶轴光學上等 效的結晶轴的方向以上述光軸為中心互相地大約各(90/Ν) -9 - 本紙張尺度適用中國國家標準(CNS) Α4規格(210X297公袭) 584898 A7 _______ B7__ 五、發明説明(7 ) 度分開的旋轉位置關係。 此外,如果根據第1個發明的理想形態,上述光學系 統’包含上述光軸及結晶軸[011]或是與該結晶軸光學上 等效的結晶軸被設定為大約一致的L(L是3以上的整數)片 的結晶光學元件,上述L片的結晶光學元件具有在垂直於 上述.光轴的面内的結晶轴[10 0 ]或是與該結晶轴光學上等 效的結晶轴的方向以上述光軸為中心互相地大約各(180/L) 度分開的旋轉位置關係。 再者,如果根據第1個發明的理想形態,上述光學系 統’包含上述光軸及結晶軸[011]或是與該結晶軸光學上 等效的結晶軸被設定為大約一致的P(P是2以上的整數)片 的結晶光學元件,上述P片的結晶光學元件具有在垂直於 上述光軸的面内的結晶軸[1〇〇]或是與該結晶軸光學上等 效的結晶軸的方向以上述光軸為中心互相地大約各(9〇/p) 度分開的旋轉位置關係。 在本發明的第2個發明,包含以屬於立方晶系列的結晶 所形成的多數的結晶光學元件的光學系統, 其特徵提供一種光學系統,為包含上述光軸及結晶轴 [111 ]或是與該結晶軸光學上等效的結晶軸被設定為大約 一致的M (Μ是3以上的整數)片的結晶光學元件, 上述Μ片的結晶光學元件具有在垂直於上述光軸的面内 的結晶軸[1-10]或是與該結晶軸光學上等效的結晶軸的方 向以上述光軸為中心互相地大約各(120/Μ)度分開的旋轉 位置關係。 ___ -10 - 本纸張尺度適財S ®家標準(CNS) Α4規格(21G X 297公袭) " " 584898 A7 _ B7 五、發明説明(8 ) 在本發明的第3個發明,包含以屬於立方晶系列的結晶 所形成的多數的結晶光學元件的光學系統, 其特徵為提供一種光學系統,為包含上述光軸及結晶軸 [〇〇 1]或是與該結晶軸光學上等效的結晶軸被設定為大約 一致的N (N是3以上的整數)片的結晶光學元件, 上述N片的結晶光學元件具有在垂直於上述光轴的面内 的結晶轴[10 0 ]或是與該結晶轴光學上等效的結晶轴的方 向以上述光軸為中心互相地大約各(90/N)度分開的旋轉位 置關係。 在本發明的第4個發明,包含以屬於立方晶系列的結晶 所形成的多數的結晶光學元件的光學系統, 其特徵為提供一種光學系統,包含上述光軸及結晶軸 [0U]或是與該結晶軸光學上等效的結晶軸被設定為大約 一致的L(L是3以上的整數)片的結晶光學元件, 上述L片的結晶光學元件具有在垂直於上述光軸的面内 的結晶軸[100]或是與該結晶軸光學上等效的結晶軸的方 向以上述光軸為中心互相地大約各(1 80/L)度分開的旋轉位 置關係。 在本發明作為第5個發明,包含以屬於立方晶系列的結 晶所形成的多數的結晶光學元件的光學系統, 其特徵為也可提供一種光學系統,包含上述光軸及結晶 軸[011]或是與該結晶軸光學上等效的結晶軸被設定為大 約一致的P(P是2以上的整數)張的結晶光學元件, 上述P片的結晶光學元件具有在垂直於上述光軸的面内 本紙張尺度適用中S S家標準(CNS) Α4規格(210 X297公釐) " 584898 A7 B7 五、發明説明(9 ) 的結晶軸[100]或是與該結晶軸光學上等效的結晶軸的方 向以上述光軸為中心互相地大約各(90/p )度分開的旋轉位 置關係。再者,在第1個發明〜第5個發明,2片或3片以上 的結晶光學元件,理想的是各元件的旋轉誤差在±4度以 内’或是應該與光軸一致的結晶光軸與光軸角度誤差在士4 度以内。 如果根據第1個發明〜第5個發明的理想形態,理想的是 上述結晶為氟化鈣結晶或氟化鋇結晶。再者,理想的是再 備有至少一面凹面反射鏡。此外,理想的是對於ArF準分 子雷射的振動波長做最佳象差補正,或是對於匕雷射的振 動波長做最佳象差補正。 在本發明的第6個發明,提供一種曝光裝置,其特徵為 具備為了照明掩模的照明系統,及為了將在上述掩模所形 成的圖案的像形成在感光性基板上的第丨個發明〜第5個發 明的光學系統。 Λ 在本發明的第7個發明,提供一種微裝置的製造方法, 其特徵為包含使用第6個發明的曝光裝置而將上述掩模的 圖案曝光在上述感光性基板的曝光工序,及將藉由上述曝 光裝置曝光的上述感光性基板顯影的顯影工序。 ϋ之實施形熊 ··, 根據附圖說明本發明的實施形態。 旦,1係大略地表示具備了有關本發明的各實施形態的投 影光學系統的構成之圖。於曝光裝置所裝載的投影光學系 統適用於本發明的各實施形態。要是參照圖!的話,:關 本紙張中國國家標準(CNS) A4規格“晴公爱) -12- 584898 五、發明説明( 各實施形態的曝光裝置,備有例如像ArF準分子雷射、匕 雷射的光源1。由光源丨所供應的光束,經由逆光系統2之 後被引導至照明光學系統3。照明光學系統3係由圖上所示 的彎屈反射鏡3a及3b、不圖示的光學積分儀(光度均等化 兀件)所構成,以大致一樣的發光強度照明光網(掩 模)101。 光網101 ,譬如藉由真空吸著被光網架4支持,藉由光網 載物台5的作用而構成可移動。透過光網丨〇丨的光束,經過 投影光學系列300聚光,於好像半導體晶片1〇2的感光性格 基板上,形成光網101上的圖案的投影像。晶片ι〇2也是譬 如藉由真空吸著被晶片架7支持,藉由晶片載物台8的作用 而構成可移動。如此一來,藉由使晶片1〇2一邊一步步移 動一邊進行整體曝光,能夠將光網1〇1的圖案投影像順序 謄寫至晶片102的各曝光領域。 此外,對於投影光學系統3〇〇藉由使光網1〇1及晶片 一邊相對移動一邊進行掃描曝光(Scan曝光),能夠將光網 101的圖案投影像順序謄寫至晶片102的各曝光領域。 者,實際對電子元件電路圖案的曝光之際,因為有必要在 =前的工序被形成的圖案上,將下一道工序的圖案正確地 疋位,所以有裝載為了在曝光裝置正確地檢測出晶片102 上的檢測記號位置的定位顯微鏡1 〇。 使用F2雷射、ArF準分子雷射(或波長126 〇111的八1_2雷射 等)作為光源i的時候’送光系統2、照明光學系統3及投影 光學系統则的光圖案徑,被例如像氮的不活性氣體清 本纸張尺度適財關家標準(CNS) Μ規格(21QX撕公董) -13 - 584898 A7 B7 •14- 五、發明説明(u 除。特別疋在使用F 2雷射的時候,光網1 〇 1、光網架4及光 網載物台5 ’藉由箱子6與外部的空氣隔離,該箱子6的内 部空間也被不活性氣體清除。同樣地,晶片1〇2、晶片架7 及晶片載物台8藉由箱子9隔離外部的空氣,該箱子9的内 部空間也是不活性氣體清除^ 圖2係大略地表示有關本發明的第1個實施形態的投影光 學系統的構成之圖。再者,在圖2,各別設定將2軸平行於 投影光學系統100(對應於圖1的投影光學系統3〇〇)的光軸 AX100,將X轴平行於垂直z軸的表面内的圖2的圖紙面, 及將Y軸垂直於垂直Z軸的表面内的圖2的圖紙面。然後, + Z軸為圖中向下,+χ軸為圖中向右,+ γ軸為從紙張正 面向自己,ΧΥΖ座標系統構成整體為右手座標系統(以 下,簡稱「右手定則」)。 在第1個實施形態,對於波長為193 nm的ArF雷射,象 差補正最佳化的折射型投影光學系統適用於本發明。在第 1個貫施形態的投影光學系統丨〇〇 ,由光網丨〇丨上面的丨點射 出的光束,沿光軸AX100而經過配置的透鏡1〇3〜11〇 ,聚 光於作為感光性基板的半導體晶片1〇2上的1點。如此一 來’在晶片102上,形成描繪於光網1 〇丨的圖案的投影像。 在第Η固貫施形態,透鏡103〜1 之中,透鏡1〇5、 106、109及1 10以氟化鈣結晶(螢石)形成,其它的透鏡以 合成石英玻璃形成,以下簡稱以螢石形成的透鏡為結晶透 鏡。再者,瞳孔面ρ Ρ,對於光網丨〇丨及晶片(感光性基 板)1〇2大致成為光學的傅立葉(F〇urier)變換面,在此也能 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 裝 訂The absolute value of the difference between the evaluation amounts ZSj is desirably set to be smaller than λ / 2 in the imaging beam focused on at least any one point on the image surface or the object surface of the optical system described above. Furthermore, according to the ideal form of the first invention, when the wavelength of light is λ, the absolute value of the difference between the first sum evaluation value Σ Rj and a certain value is' for condensing the light in the optical system. The light rays in the imaging beam of at least any one point on the image surface or the object surface are set to be smaller than λ / 2. In addition, when the wavelength of light is constant, it is desirable that the absolute value of the difference between the second sum evaluation value Σ Sj and a certain value is focused on the image surface or object surface of the optical system. The light rays in the imaging beam of at least any one point are set smaller than λ / 2. In addition, according to an ideal form of the first invention, the optical system 'including the optical axis and the crystal axis [111] or a crystal axis optically equivalent to the crystal axis is set to approximately the same M (M is 3 The crystalline optical element of the above (integer) sheet, the crystalline optical element of the M sheet has a crystal axis [1-10] in a plane perpendicular to the optical axis, or a crystal axis optically equivalent to the crystal axis Directions are rotationally related to each other at approximately (120 / M) degrees apart from each other around the above-mentioned optical axis. Furthermore, according to an ideal form of the first invention, the optical system includes the optical axis and the crystal axis [00] or a crystal axis that is optically equivalent to the crystal axis and is set to approximately the same N ( N is an integer of 3 or more), and the crystalline optical element of the N sheet has a crystal extraction [100] in a plane perpendicular to the optical axis or a crystal optically equivalent to the crystal axis. The directions of the axes are approximately (90 / N) -9 from each other with the above-mentioned optical axis as the center.-This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 public attack) 584898 A7 _______ B7__ V. Description of the invention (7) Separate rotation position relationship. In addition, according to an ideal form of the first invention, the optical system 'including the optical axis and the crystal axis [011] or a crystal axis which is optically equivalent to the crystal axis is set to approximately the same L (L is 3 The crystalline optical element of the above) sheet, the crystalline optical element of the L sheet has a direction of the crystal axis [10 0] in a plane perpendicular to the optical axis, or a direction of the crystal axis optically equivalent to the crystal axis Rotating positional relationships separated by approximately (180 / L) degrees from each other with the optical axis as the center. Furthermore, according to an ideal form of the first invention, the optical system 'including the optical axis and the crystal axis [011] or a crystal axis which is optically equivalent to the crystal axis is set to approximately the same P (P is 2 or more) of the crystalline optical element, the crystalline optical element of the P sheet having a crystalline axis [100] in a plane perpendicular to the optical axis or a crystal axis optically equivalent to the crystalline axis Directions are rotationally related to each other at approximately (90 / p) degrees apart from each other with the optical axis as a center. In the second invention of the present invention, an optical system including a plurality of crystalline optical elements formed by crystals belonging to the cubic crystal series is characterized in that it provides an optical system including the optical axis and the crystal axis [111] or This crystal axis is optically equivalent. The crystal axis is set to a crystalline optical element of approximately uniform M (M is an integer of 3 or more) pieces. The crystalline optical element of the M sheet has crystals in a plane perpendicular to the optical axis. The axis [1-10] or the direction of the crystal axis that is optically equivalent to the crystal axis is a rotational position relationship separated by approximately (120 / M) degrees from each other with the optical axis as a center. ___ -10-The paper size is suitable for S ® Home Standard (CNS) A4 specification (21G X 297 public attack) " " 584898 A7 _ B7 V. Description of the invention (8) In the third invention of the present invention, An optical system including a plurality of crystalline optical elements formed by crystals belonging to the cubic crystal series is characterized by providing an optical system including the above-mentioned optical axis and crystal axis [〇〇1] or optically equivalent to the crystal axis The effective crystalline axis is set to approximately uniform crystalline optical elements of N (N is an integer of 3 or more) pieces, and the crystalline optical elements of the N pieces have a crystalline axis [10 0] in a plane perpendicular to the optical axis or It is a rotational position relationship in which the directions of the crystal axes which are optically equivalent to the crystal axes are separated by approximately (90 / N) degrees from each other with the optical axis as a center. In a fourth invention of the present invention, an optical system including a plurality of crystalline optical elements formed by crystals belonging to a cubic crystal series is characterized in that it provides an optical system including the optical axis and the crystal axis [0U] or This crystal axis is optically equivalent to a crystalline optical element having approximately the same L (L is an integer of 3 or more) pieces. The crystalline optical element of the L sheet has crystals in a plane perpendicular to the optical axis. The axis [100] or the direction of the crystal axis which is optically equivalent to the crystal axis is a rotation position relationship separated from each other by approximately (1 80 / L) degrees with the optical axis as a center. The fifth invention of the present invention is an optical system including a plurality of crystalline optical elements formed by crystals belonging to a cubic crystal series, and an optical system including the optical axis and the crystal axis [011] or It is a crystalline optical element having P (P is an integer of 2 or more) sheets whose crystalline axis is optically equivalent to the crystalline axis, and the crystalline optical element of the P sheet is in a plane perpendicular to the optical axis. This paper size applies to the SS family standard (CNS) A4 specification (210 X297 mm) " 584898 A7 B7 5. The crystal axis [100] of the description of the invention (9) or a crystal axis optically equivalent to the crystal axis The directions of rotation are rotationally related to each other by about (90 / p) degrees with the optical axis as the center. Furthermore, in the first invention to the fifth invention, it is desirable that the crystalline optical element of two or more crystalline optical elements has a rotation error within ± 4 degrees of each element, or a crystalline optical axis that should coincide with the optical axis. The angle error from the optical axis is within 4 degrees. According to the preferred embodiments of the first to fifth inventions, the crystal is preferably a calcium fluoride crystal or a barium fluoride crystal. Furthermore, it is desirable to provide at least one concave mirror. In addition, it is ideal to make the best aberration correction for the vibration wavelength of the ArF excimer laser, or the best aberration correction for the vibration wavelength of the dagger laser. According to a sixth invention of the present invention, there is provided an exposure apparatus including an illumination system for illuminating a mask, and a first invention for forming an image of a pattern formed on the mask on a photosensitive substrate. ~ The fifth invention of the optical system. Λ In a seventh invention of the present invention, there is provided a method for manufacturing a microdevice, which includes an exposure step of exposing the pattern of the mask to the photosensitive substrate using the exposure apparatus of the sixth invention, and A developing step of developing the photosensitive substrate exposed by the exposure device. The embodiment of the present invention will be described with reference to the accompanying drawings. 1 is a diagram schematically showing the configuration of the projection optical system provided with each embodiment of the present invention. The projection optical system mounted on the exposure apparatus is applicable to each embodiment of the present invention. If you refer to the picture! Words: Chinese National Standard (CNS) A4 specification "King Gongai" of Guanben Paper -12- 584898 5. Description of the invention (exposure device of each embodiment, equipped with light sources such as ArF excimer laser, dagger laser, etc. 1. The light beam supplied by the light source 丨 is guided to the illumination optical system 3 after passing through the backlight system 2. The illumination optical system 3 is a bending inflection mirror 3a and 3b shown in the figure, and an optical integrator (not shown) ( The photometric equalization element is used to illuminate the optical network (mask) 101 with approximately the same luminous intensity. The optical network 101, for example, is supported by the optical network frame 4 by vacuum suction, and is supported by the optical network stage 5. The light beam transmitted through the optical network 丨 〇 丨 is condensed by the projection optical series 300 and formed on a photosensitive substrate like a semiconductor wafer 102 to form a projection image of a pattern on the optical network 101. Wafer ι〇 2 is also supported by the wafer holder 7 by vacuum suction, for example, and is movable by the action of the wafer stage 8. In this way, by moving the wafer 102 step by step while performing overall exposure, it is possible to Optical net 1〇1 pattern cast The images are sequentially transcribed into each exposure area of the wafer 102. In addition, for the projection optical system 300, scanning exposure (Scan exposure) can be performed by moving the optical screen 101 and the wafer while relatively moving, so that the pattern of the optical screen 101 can be projected The images are sequentially transcribed to each exposure area of the wafer 102. In actual exposure of the electronic device circuit pattern, it is necessary to correctly position the pattern of the next step on the pattern formed in the previous step, so Positioning microscope 1 is mounted so that the detection mark position on wafer 102 can be accurately detected by the exposure device. F2 laser, ArF excimer laser (or eight 1_2 laser with wavelength of 126 〇111, etc.) is used as the light source i. The light pattern diameter of the light transmission system 2, the illumination optical system 3, and the projection optical system is, for example, an inert gas such as nitrogen, the paper size, the paper standard (CNS), the M specification (21QX tear public director) -13-584898 A7 B7 • 14- V. Description of the invention (except for u. In particular, when using F 2 laser, optical network 1 〇1, optical network frame 4 and optical network stage 5 ′ through box 6 With outside air The internal space of the box 6 is also removed by the inert gas. Similarly, the wafer 10, the wafer holder 7, and the wafer stage 8 are isolated from the outside air by the box 9, and the internal space of the box 9 is also inactive. Gas Removal ^ FIG. 2 is a diagram schematically showing the configuration of a projection optical system according to the first embodiment of the present invention. In FIG. 2, two axes are set parallel to the projection optical system 100 (corresponding to the figure). The optical axis AX100 of the projection optical system 1 of 1), the drawing surface of FIG. 2 in a surface where the X axis is parallel to the vertical z axis, and the drawing surface of FIG. 2 in a surface where the Y axis is perpendicular to the vertical Z axis. Then, the + Z axis is downward in the figure, the + χ axis is right in the figure, the + γ axis is from the front of the paper toward itself, and the XYZ coordinate system constitutes the right-hand coordinate system as a whole (hereinafter, referred to as the "right-hand rule"). In the first embodiment, for an ArF laser having a wavelength of 193 nm, a refractive-type projection optical system optimized for aberration correction is applicable to the present invention. In the first projection optical system of the implementation mode, 〇〇〇, the light beam emitted from the upper 丨 point of the optical network 丨 〇 丨 is arranged along the optical axis AX100 through the lens 103 ~ 11〇, focused on the light Point on the semiconductor wafer 102 of the flexible substrate. In this way, a projection image of a pattern drawn on the optical net 100 is formed on the wafer 102. In the first solid state, among the lenses 103 ~ 1, the lenses 105, 106, 109, and 10 are formed of calcium fluoride crystal (fluorite), and other lenses are formed of synthetic quartz glass, hereinafter referred to as fluorescent The lens formed by the stone is a crystalline lens. In addition, the pupil surface ρ P is approximately the optical Fourier transform surface for the optical network 丨 〇 丨 and the wafer (photosensitive substrate) 102. Here, the Chinese national standard (CNS ) A4 size (210X297mm) binding
584898 A7 B7 五、發明説明( 夠配置口徑光圈。 如前所述’勞石對於短波長的光束具有複折射性^但 是’對於在螢石結晶的結晶軸[丨〇〇]及[丨丨丨]的方向行進的 光線’並不產生複折射性(具有直交的偏光面的2束光束間 的折射率差)。因此,結晶透鏡(結晶光學系統)的結晶軸 [111]或[100]與投影光學系統的光軸AX 1〇〇(進而結晶透 鏡的光軸)如果設定一致的話,對於與光軸i 〇〇平行行進的 光線變成不產生複折射性。相反地,對於沿著結晶軸[〇11] 前進的成像光,複折射性量變成最大。 可是’為了提升投影光學系統1〇〇的解像度,有必要擴 大所謂往晶片102的光束的最大入射角01〇〇(參照圖2)的 正弦的;像這邊的N A (影像這邊的數值口徑)。順便一 提,發自光網101上的1點而聚光於晶片1〇2的成像光束, 在根據往晶片102的最大入射角01〇〇所規定的成像光束的 範圍擴大(圖2中自成像光束1〇〇]^至1〇〇11之範圍),成為通 過構成才又;光學系列1 〇 〇的透鏡1 〇 3〜11 〇。 因此,關於在成像光束(100L〜100R)中的任意的成像光 線100 m,將其進行方向全部設定與光軸AX1 〇〇平行之事 疋不可能的。事實上,關於任意的成像光線丨〇〇 m,結晶 透鏡105内的光圖案徑1 〇5 m、結晶透鏡1 〇6内的光圖案徑 106 m、結晶透鏡1 〇9内的光圖案徑1 〇9 m、及結晶透鏡11 〇 内的光圖案徑110 m,並非與光軸AX100平行。其結果, 關於成像光線1 〇〇 m,變成接受起因於螢石結晶的複折射 的光圖案徑變動(光圖案徑長變化)結果。 -15- 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公爱) 裝 訂584898 A7 B7 V. Description of the invention (Enough to configure the aperture. As mentioned before, "Luo Shi has birefringence for short-wavelength light beams ^ but" for the crystal axes of fluorite crystals [丨 〇〇] and [丨 丨 丨The light traveling in the direction of "] does not produce birefringence (refractive index difference between two beams with orthogonal polarizing planes). Therefore, the crystal axis [111] or [100] of the crystal lens (crystal optical system) and If the optical axis AX 100 of the projection optical system (and thus the optical axis of the crystal lens) is set to the same value, it will not cause birefringence for light traveling in parallel with the optical axis i 00. Conversely, for light along the crystal axis [ 〇11] The amount of birefringence of the imaging light is maximized. However, in order to improve the resolution of the projection optical system 100, it is necessary to enlarge the so-called maximum incident angle of the light beam to the wafer 102 (see FIG. 2). Sinusoidal; like this NA (the numerical aperture on the image side). By the way, the imaging beam emitted from 1 point on the optical network 101 and focused on the wafer 102 is based on the maximum incidence to the wafer 102 Angle 01〇〇 as specified The range of the image beam is expanded (the range from the imaging beam 100 to 1001 in FIG. 2), and it becomes the lens through the composition; the optical series 1 lens 100 to 100. Therefore, regarding the It is impossible to set the direction of all imaging beams (100 m to 100 R) parallel to the optical axis AX100. In fact, about arbitrary imaging rays The light pattern diameter in the lens 105 is 105 m, the light pattern diameter in the crystal lens 106 is 106 m, the light pattern diameter in the crystal lens 10 is 10 m, and the light pattern diameter in the crystal lens 11 is 110 m, which is not parallel to the optical axis AX100. As a result, the imaging light ray of 100 m has a light pattern diameter change (light pattern diameter length change) that is caused by the birefringence caused by fluorite crystals. -15- This paper Standards apply to China National Standard (CNS) A4 specifications (210X297 public love)
584898 A7 B7584898 A7 B7
關於成像光束(100L〜100R)内的其它的成像光線,也是 透過結晶透鏡1〇5,1〇6,1〇9,11〇之際,接受起因於螢石結晶 的複折射的光圖案徑變動。此情況,關於其它的成像光 線,因為與各結晶透鏡中的光圖案徑、光軸A X 1 〇〇所成的 角度一般是與成像光線100 m的情況不同,所以變成接受 與成像光線100 m的情況不同的光圖案徑變動。如此地, 關於成像光束(從l〇〇L至i〇〇R)内的各成像光線各別接受不 同的光圖^呈長變動的事情,也就是於成像光束產生波面 象差的事情,連帶使投影光學系統1〇〇的解像性能夠降 低。 根據曝光波長λ、螢石的結晶方向與光束的進行方向的 關係、及光束的偏光方向正確地求如此的複折射量。但 疋,其為併用從螢石的結晶方向與光束的進行方向所決定 的2層的張量,及為了將其張量在3次元空間内旋轉的多數 的旋轉行列才得到的,過去在作為光學設計的指標使用上 為極為複雜的計算方法。本案發明者發現了藉由以下陳述 的簡便的式子能夠表示上述的複折射量。因此,藉由滿足 该式子的光學設計,發現了一種光學系統的設計為可行, 其為即使使用結晶透鏡複折射量的不良影響也不會實際上 產生。 *' 算出上逑的複折射量的式子,根據是否使結晶透鏡的哪 個結晶軸與光學系統的光軸(以下,稱為ζ軸)大約一致而 不同。因此,參照圖3 ,說明在如螢石的立方晶系的結晶 上的結晶軸的名稱等等。所謂立方晶系係立方體的晶胞於The other imaging rays in the imaging beam (100L ~ 100R) are also transmitted through the crystal lens 105, 106, 10, and 110, and the light pattern diameter changes due to the birefringence of the fluorite crystal . In this case, as for other imaging light rays, the angle formed with the light pattern diameter and the optical axis AX 100 in each crystal lens is generally different from that of the imaging light rays of 100 m. The light pattern diameter varies from case to case. In this way, with regard to the fact that each imaging light beam in the imaging beam (from 100L to 100R) accepts a different light pattern, which has a long variation, that is, the occurrence of wavefront aberrations in the imaging beam, together with The resolution of the projection optical system 100 can be reduced. Such an amount of birefringence is accurately obtained from the relationship between the exposure wavelength λ, the crystal direction of the fluorite and the direction of progress of the light beam, and the polarization direction of the light beam. However, it is obtained by using two layers of tensors determined from the crystallographic direction of fluorite and the direction of the light beam, and most of the rotations in order to rotate the tensor in the three-dimensional space. Optical design indicators use extremely complex calculation methods. The inventors of the present invention have found that the above-mentioned amount of birefringence can be expressed by a simple expression described below. Therefore, by satisfying the optical design of this formula, it was found that a design of an optical system is feasible, which does not actually cause an adverse effect of the birefringence amount even when a crystalline lens is used. * 'The formula for calculating the birefringence of the upper part differs depending on whether or not the crystal axis of the crystal lens is approximately the same as the optical axis (hereinafter referred to as the z-axis) of the optical system. Therefore, referring to Fig. 3, the name of the crystal axis and the like on a crystal of a cubic system such as fluorite will be described. The unit cell of the cubic system is
584898 A7 B7 五、發明説明( 其立方體的各邊的方向周期性地排列的結晶構造。立方體 的各邊為相互正交,將該各邊當作Xa軸、Ya軸、Za軸。 此時X a軸的+方向為結晶軸[1 〇〇]的方向,γ &軸的+方向 為結晶軸[010]的方向,Za軸的+方向為結晶軸[001]的 方向。 更一般性的來說,在上述的(Xa,Ya,Za)右手標系 統上取方位向量(xl,y 1,ζ υ時候,其方向成為結晶軸 (χ 1, y1,ζ 1)的方向。例如,結晶軸[111 ]的方向與方 位向量(1,1,1)一致。此外結晶軸[u_2]的方向與方位向 量(1 , 1,- 2) —致。當然,在立方晶系列的結晶,χ a軸、 Ya軸、及Za軸,不論光學性、機械性都互相地完全等 效,在貫際的結晶上無法給予什麼區別。再者,如結晶軸 [011] ’ [0-11],[110]等的3個的數字並列及改變其符號的 各結晶軸也是光學性、機械性都互相地完全等效(同等)。 在本發明,有必要將相對的結晶轴方位嚴密地定義的時 候,例如將結晶軸[〇11]及光學性等效的多數的結晶軸如 [(ΗΠΜΟ-ηρπΗ)]^變符號、排列位置而表示(列 舉)°但S,沒有必要將相對的結晶軸方位嚴密地定義的 時候,以結晶軸[011]的表*,當作總括地表示像[011], [0-Π],[no]那樣的多數的光學性的等效結晶軸。此斑社 晶軸[_或[m]等同樣,對結晶棒u]以外之其他結晶 轴亦相同。 高解像度被要求的光學系統的時候,在結晶透鏡,投吳 結晶軸_],結晶軸[〇11]’或結晶轴[⑴]與光轴_584898 A7 B7 V. Description of the invention (The crystal structure in which the directions of the sides of the cube are periodically arranged. The sides of the cube are orthogonal to each other, and the sides are regarded as Xa axis, Ya axis, Za axis. At this time X The + direction of the a axis is the direction of the crystal axis [100], the + direction of the γ & axis is the direction of the crystal axis [010], and the + direction of the Za axis is the direction of the crystal axis [001]. More general For example, when the azimuth vector (xl, y 1, ζ υ) is taken on the (Xa, Ya, Za) right-handed mark system described above, the direction becomes the direction of the crystal axis (χ 1, y1, ζ 1). For example, crystal The direction of the axis [111] is consistent with the azimuth vector (1, 1, 1). In addition, the direction of the crystal axis [u_2] is the same as the azimuth vector (1, 1,-2). Of course, in the crystal of the cubic series, χ The a-axis, the ya-axis, and the za-axis are completely equivalent to each other regardless of optical and mechanical properties, and no distinction can be made in the crystallization of the intersect. Furthermore, such as the crystallization axis [011] '[0-11], [110] The three crystal numbers juxtaposed and each crystal axis whose sign is changed are also optically and mechanically equivalent to each other (equivalent). In the present invention When it is necessary to define the relative orientation of the crystal axis strictly, for example, the crystal axis [〇11] and the optically equivalent crystal axes such as [(ΗΠΜΟ-ηρπΗ)] ^ are changed with symbols and arranged positions (list ) °, but S, when it is not necessary to define the relative orientation of the crystal axis strictly, use the table of the crystal axis [011] as a general expression like [011], [0-Π], [no] Most optically equivalent crystal axes. The same as the crystal axis [_ or [m], etc., the same for crystal axes other than crystal rod u]. When an optical system with high resolution is required, a crystal lens , Cast Wu crystal axis _], crystal axis [〇11] 'or crystal axis [⑴] and optical axis _
裝 訂Binding
•17-• 17-
584898 A7 ____B7 五、發明説明(^~) 大約一致就可以。此為,因為藉由使這些的結晶軸與光軸 一致,對於複折射的光軸的旋轉對稱性能夠作最佳地設 定。再者,使結晶軸一致與Z軸的時候,Z軸在垂直的面 (XY平面)内,變成存在結晶軸[1〇〇] , [010] , [11〇], [-110]等。再者,使結晶軸[〇11]與Z軸一致的時候,於 XY平面内存在結晶軸[100],[·1〇〇] , [〇1 等。此外, 使結晶軸[ill]與ζ軸一致的時候,於\¥平面内存在結晶 軸[1-10] ,[11-2]等。 因此,即使使Ζ軸與上述的三結晶軸[001],[011], [111 ]中任何一結晶軸一致,也餘留所謂使其結晶透鏡要 多少角度回轉光軸中心的自由度。隨著其回轉角度複折射 的影響也變化。在第1個實施形態,於結晶透鏡1〇5及 106 ’使結晶軸[〇〇 1 ]與投影光學系統1⑽的光軸a X丨〇〇 一 致。此外,在結晶透鏡1 〇9及11 〇,使結晶軸[丨丨丨]與投影 光學系統100的光軸AX100—致。 圖4係說明以結晶透鏡的光軸為中心的旋轉角度的定義 之圖。再者’在圖4(a),(b),(c),+ z軸為由紙張正面 朝向自己的方向,與投影光學系統1〇〇的光軸Αχι〇〇一致。 如圖4( a)所tf,對於結晶軸[〇〇 1 ]與光軸(ζ軸)一致的結晶 透鏡Gj(結晶透鏡105及i〇6f的丨個透鏡),要決定從以其 X Y平面内的結晶軸[1 〇〇]的Z軸為旋轉中心的χ抽方向往γ 軸方向的旋轉量(旋轉角度)為pj。 此外,如圖4(b)所示,在對於結晶軸[m]與光軸(之軸) 一致的結晶透鏡Gj (結晶透鏡1 〇9及11 〇中的i個透鏡),要 -18· 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公釐) ---- A7 B7584898 A7 ____B7 Fifth, the description of the invention (^ ~) is about the same. This is because the rotational symmetry of the optical axis of birefringence can be optimally set by making these crystal axes coincide with the optical axis. In addition, when the crystal axis is aligned with the Z axis, the Z axis is in a plane (XY plane) perpendicular to the crystal axis [100], [010], [11〇], [-110], or the like. When the crystal axis [〇11] is made to coincide with the Z axis, the crystal axis [100], [· 100], [〇1, etc.] exist in the XY plane. In addition, when the crystallographic axis [ill] is consistent with the z-axis, there are crystallographic axes [1-10], [11-2], etc. in the \ ¥ plane. Therefore, even if the Z axis is made to coincide with any one of the three crystal axes [001], [011], [111] described above, there is still a degree of freedom to rotate the center of the optical axis by what angle the crystal lens is required to rotate. The effect of birefringence changes with its rotation angle. In the first embodiment, the crystal axes [00] and the optical axis a X of the projection optical system 10 are aligned with the crystal lenses 105 and 106 '. In addition, in the crystal lenses 109 and 11, the crystal axis [丨 丨 丨] is aligned with the optical axis AX100 of the projection optical system 100. Fig. 4 is a diagram illustrating the definition of a rotation angle around the optical axis of a crystal lens. Furthermore, in Fig. 4 (a), (b), (c), the + z axis is the direction from the front side of the paper toward itself, and is the same as the optical axis AX of the projection optical system 100. As shown in tf in Fig. 4 (a), for the crystal lens Gj (the lens of the crystal lens 105 and 〇6f) whose crystal axis [〇〇1] is consistent with the optical axis (ζ axis), it is necessary to determine from the XY plane The rotation amount (rotation angle) in the χ pumping direction toward the γ-axis direction from the Z-axis of the crystal axis [100] within the rotation center is pj. In addition, as shown in FIG. 4 (b), for a crystalline lens Gj (i lens of the crystalline lenses 10 and 11) whose crystal axis [m] coincides with the optical axis (axis), -18 · is required. This paper size applies to China National Standard (CNS) A4 (210X 297mm) ---- A7 B7
584898 五、發明説明( 決定從以其XY平面内的結晶轴[1· 1G]的Z軸為旋轉中心的 X轴方向往Υ軸方向的旋轉量(旋轉角度)為⑸。再者,雖 然在本實施形態並無使用,但是對於結晶轴[011]與光轴 (ζ軸)一致的結晶透鏡…’如圖4(c)所示,要決定從以其 XY平面内的結晶轴[100]的2轴4旋轉中心的絲方向往Y 軸方向的旋轉量(旋轉角度)為。 圖5係說明結晶透鏡Gj中的成像光線與❻方向所形成角 度Θ及與X軸方向所形成角度0的定義之圖。亦即,圖5係 表示結晶透鏡Gj(結晶透鏡105,1〇6 , 1〇9,11〇)中的成像 光圖案徑(105 m,106 m,109 m,"〇⑷與❻方向所 形成角度θ及與X軸方向所形成角度0。圖5中的向量 係平行於各結晶透鏡Gj·中的成像光圖案徑(ι〇5㈤ m,H)9 m,110 m)的方向向量,使其始點與z,軸上面的 點I一致著。再者,Z,軸係將光軸的z軸平行移動至向量 Ljm的始點I的位置之軸,其方向當然等於z軸的方向。 此時,定義向量Ljm與Z,軸方向所形成角度為θ。對於 第j個的結晶透鏡Gj,該角度為Θ」·。此外,定義向量 的終點P以被投影在Z,軸上面的位置為原點〇 ,從原點〇延 長到終點P的線段與X,軸所形成角度為0。此時候;對於 第j個的結晶透鏡Gj ’該角度也是0j。在此,χ,軸亦是平 行移動X軸的,其方向當然等於又軸的方向。其結果,p 軸亦是平行移動Y軸的,其方向當然等於γ軸的方向。584898 V. Description of the invention (Determine the amount of rotation (rotation angle) from the X-axis direction with the Z-axis of the crystal axis [1 · 1G] in the XY plane as the rotation center to the Z-axis direction. Furthermore, although This embodiment is not used, but for a crystal lens whose crystal axis [011] and the optical axis (ζ axis) coincide ... 'As shown in FIG. 4 (c), it is necessary to determine the crystal axis [100] from its XY plane. The amount of rotation (rotation angle) from the silk direction of the 2-axis 4 rotation center to the Y-axis direction is: Fig. 5 illustrates the angle Θ formed by the imaging light in the crystal lens Gj and the ❻ direction and the angle 0 formed by the X-axis direction. Definition diagram. That is, FIG. 5 shows the imaging light pattern diameter (105 m, 106 m, 109 m, " 〇⑷) in the crystalline lens Gj (the crystalline lens 105, 106, 10, 11). The angle θ formed with the ❻ direction and the angle formed with the X-axis direction are 0. The vector in FIG. 5 is parallel to the imaging light pattern diameter (ι05㈤ m, H) 9 m, 110 m in each crystal lens Gj · Direction vector so that its starting point coincides with z, the point above the axis I. Furthermore, Z, the axis system moves the z-axis of the optical axis parallel to the starting point I of the vector Ljm The axis of the position is, of course, equal to the direction of the z-axis. At this time, the vectors Ljm and Z are defined, and the angle formed by the axis direction is θ. For the j-th crystal lens Gj, the angle is θ ″. In addition, the vector is defined The end point P is projected on Z, the position above the axis is the origin 〇, the line segment extending from the origin θ to the end point P and X, the axis forms an angle of 0. At this time; for the j-th crystal lens Gj ' This angle is also 0j. Here, χ, the axis is also parallel to the X axis, and its direction is of course equal to the direction of the axis. As a result, the p axis is also parallel to the Y axis, and its direction is of course equal to the direction of the γ axis.
以下,將在含有表示光束的行進的方向的向量和I 軸之平面内有電場面的偏光稱為「R偏光」,含有向B -19-Hereinafter, the polarized light having an electric scene in a plane containing a vector indicating the direction of travel of the light beam and the I-axis is referred to as "R polarized light", and contains a direction toward B -19-
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584898 A7 B7 五、發明説明(584898 A7 B7 V. Description of the invention (
LjmiL與R偏光面正交的平面内有電場面的偏光稱為「0 偏光」。更廣義地說,R偏振光係表示偏光方向與以 AX 100為中心的圓的直徑方向大概一致的偏光。此外θ偏 光係表示偏光方向與以A X 100為中心的圓的圓周方向大概 一致的偏光。 基於以上的前提,再次說明關於算出上述的複折射量的 式子’表示關於第j個的結晶透鏡Gj内的光束的複折射量 的影響的評價量,係表示r偏光的曲折率變動量的評價量 Rj (第1個評價量),及表示Θ偏光的曲折率變動量的評價量 Sj (第2個評價量)。該2個評價量Rj•及Sj•,係使用形成結晶 透鏡Gj的結晶的物性常數α、結晶透鏡Gj中的各光束的光 圖案徑L j、上述的3個角度0 j,0 j,p j,及角度參數的ω j ( = 0 j -pj),藉由本案發明人員的分析,才了解能夠以如 下間便的式子表示。 亦即,在光軸與結晶軸[1 1 1 ]被設定為一致的結晶透鏡 (結晶光學元件)Gj,第1個的評價量Rj及第2個的評價量 Sj,能夠以下列的式子(1)及(2)分別表示。 式子5LjmiL and the polarized plane of R are polarized in the plane where there is an electrical scene is called "0 polarized light". More broadly, the R-polarized light system means polarized light whose polarization direction is approximately the same as the diameter direction of a circle centered on AX 100. The θ polarized light indicates polarized light whose polarization direction is approximately the same as the circumferential direction of a circle centered at A X 100. Based on the above premise, the expression "calculating the above-mentioned birefringence amount" is explained again. The expression "evaluation effect on the birefringence amount of the light beam in the j-th crystal lens Gj" represents the amount of variation in the curvature of r polarized light. The evaluation amount Rj (the first evaluation amount) and the evaluation amount Sj (the second evaluation amount) indicating the variation in the tortuosity of the θ polarized light. The two evaluation quantities Rj • and Sj • are obtained by using the physical property constant α of the crystal forming the crystal lens Gj, the light pattern diameter L j of each light beam in the crystal lens Gj, and the three angles 0 j, 0 j, and pj described above. , And the angle parameter ω j (= 0 j -pj), through the analysis of the inventors of this case, we can understand that it can be expressed by the following formula. That is, in the crystal lens (crystal optical element) Gj where the optical axis and the crystal axis [1 1 1] are set to be consistent, the first evaluation amount Rj and the second evaluation amount Sj can be expressed by the following formula (1) and (2) are shown separately. Formula 5
Rj= axLjx[56x{l-c〇s(40j)} -32/"2xsin(4 0j)xsin(3 6jj)]/192 (1)Rj = axLjx [56x {l-c〇s (40j)} -32 / " 2xsin (4 0j) xsin (3 6jj)] / 192 (1)
Sj= a xLjx[32x{l-cos(20j)} +64/"2xsin(2 Θ j)xsin(3 ω』)]/192 (2) 再者,在光軸與結晶軸[001]被設定為一致的結晶透鏡 (結晶光學元件)Gj,第1個的評價量Rj及第2個的評價量 -20- 本纸張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 584898 A7 B7Sj = a xLjx [32x {l-cos (20j)} + 64 / " 2xsin (2 Θ j) xsin (3 ω 『)] / 192 (2) Furthermore, the optical axis and the crystal axis [001] are Set the crystalline lens (crystalline optical element) Gj to be consistent, the first evaluation amount Rj and the second evaluation amount -20- This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) 584898 A7 B7
五、發明説明(5. Description of the invention (
Sj,能夠以下列的式子(3)及(4)分別表示。Sj can be expressed by the following formulas (3) and (4), respectively.
Rj= ^ xLjx{l-c〇s(4 6>j)}x{-84-12xcos(46;j)}/192 (3)Rj = ^ xLjx {l-c〇s (4 6 > j)} x {-84-12xcos (46; j)} / 192 (3)
Sj= a xLjx{l-cos(2 0j)}x{-48+48xcos(4a)j)}/192 (4) 此外’在光軸與結晶軸[Oil]被設定為一致的結晶透鏡 (結晶光學元件)Gj,第1個的評價量Rj及第2個的評價量Sj 能夠以下列的式子(5)及(6)分別表示。Sj = a xLjx {l-cos (2 0j)} x {-48 + 48xcos (4a) j)} / 192 (4) In addition, 'the optical axis and the crystal axis [Oil] are set to the same crystal lens (crystal Optical element) Gj, the first evaluation amount Rj and the second evaluation amount Sj can be expressed by the following formulas (5) and (6), respectively.
Rj= a xLjx[{l.c〇s(4 0j)}x{21-9xcos(4^)j)-84xcos(26;j)} +96xcos(2^j)]/192 (5)Rj = a xLjx [{l.c〇s (4 0j)} x {21-9xcos (4 ^) j) -84xcos (26; j)} + 96xcos (2 ^ j)] / 192 (5)
Sj= ^ xLjx[{l-cos(2 (9j)} x{12+36xcos(46Jj)+48xcos(26L)j)} -96xcos(26;j)]/192 (6) 結晶的物性常數a,係表示對於行進於結晶軸[〇i l]方 向的光所產生的複折射,於結晶軸[1 〇〇]的方向具有偏光 方向(電場方向)的光的折射率η 100,與在結晶軸[〇-11 ]的 方向具有偏光方向(電場方向)的光的折射率η〇11之差。物 性常數a,如果是結晶螢石的話,對於波長是丨93 nm的 ArF雷射光為3·6χ107左右’對於波長是157 nm的F2雷射 光為6·5χ10·7左右。光圖案徑長度Lj,係在結晶透鏡Gj中 的成像光圖案徑的長度(光圖案徑105 m等的長度)。再 者,因為包含其後的cos,sin之項為無單位量,評價量Rj 及Sj係表示根據複折射的透過光線的光圖案徑長度變化 (光圖案徑長度情報)。 如此一來,在從光網1 0 1上面的1點到晶片102上面的1點 的成像光線100 m上面,因為有多數的(在本實施形態為4 片的)結晶透鏡Gj存在,所以對於多數的結晶透鏡Gj的各 -21 - 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公袭)Sj = ^ xLjx [{l-cos (2 (9j)} x {12 + 36xcos (46Jj) + 48xcos (26L) j)} -96xcos (26; j)] / 192 (6) Crystal property constant a, Represents the birefringence of light traveling in the direction of the crystal axis [〇il], the refractive index η 100 of light having a polarization direction (the direction of the electric field) in the direction of the crystal axis [100], and 〇-11] has a difference in refractive index η〇11 of the light in the polarization direction (the direction of the electric field). The physical constant a, if it is crystalline fluorite, is about 3 · 6 × 107 for ArF laser light with a wavelength of 93 nm, and about 6 · 5 × 10 · 7 for F2 laser light with a wavelength of 157 nm. The light pattern diameter length Lj is the length of the imaging light pattern diameter in the crystal lens Gj (length such as the light pattern diameter of 105 m). Furthermore, since the term cos is included, the term of sin is a unitless quantity, and the evaluation quantities Rj and Sj represent changes in the light pattern diameter and length of the transmitted light according to the birefringence (light pattern diameter and length information). In this way, there are many (four in this embodiment) crystalline lenses Gj above the imaging light 100 m from 1 point on the optical network 1 1 to 1 point on the wafer 102, so for Most of the crystalline lenses Gj each -21-This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 public attack)
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584898584898
別欠出uf h I Rj及s j。而求出為第^個評價量⑸的總和 Τ(Σ4表示對於不同的j的累計的累計記號)及為第2個評 價量sj的總和的第2個評價量的總和ς~·。總和評價量 及Σ S j成為表不作為對於成像光線丨〇〇 m的投影光學系統 1〇〇全體的複折射的影響(根據複折射的透過光線的光圖案 徑長度變化)的指標。也就是,如果總和評價量sRj的值與 總和評價量的值相等的話,R偏光與㊀偏光的光圖案徑 長度變化相等,因此,波面也成為一致。 更加具体的來說,關於結晶透鏡1〇5,1〇6因為結晶軸 [001]與光軸AX100—致,所以關於成像光圖案徑1〇5 m , 106 m,求出其光圖案徑長度Lj及上述角度ej、,藉由 將那些數據代入式子(3)及(4),分別求出各結晶透鏡1〇5 , 106的評價量Rj及Sj。此外,關於結晶透鏡1〇9,n〇因為 結晶軸[111]與光軸AX 1〇〇—致,所以對於成像光圖案徑 l〇9m ’ U〇m,求出其光圖案徑長度y及上述角度㊀』、 0 j ’藉由將那些數據代入式子(丨)及(2),分別求出各結晶 透鏡109,110的評價量Rj&Sj。然後,求出關於為全部結 晶透鏡1 05 , 106,109 , 11 〇的評價量Rj及sj的總和的總 和評價量ZRj及ZSj。 在從光網10 1上的1點到晶片1 〇2上的1點的成像光束 (100L〜l〇〇R)内的波面象差,也就是在求出各成像光線間 的光圖案徑長度時,有必要對於各成像光線(通過在瞳孔 面PP上不同位置的成像光線)各別求出SRj及sSj。而ZRj 及Σ S j對於全部的成像光線為分別固定,且如果Σ rj及ς S j _____-22^___ 本紙張尺度逋用中國國家標準(CNS) A4規格(210 X 297公爹) 584898Don't owe uf h I Rj and s j. Then, the sum τ of the ^ th evaluation quantity ((Σ4 represents the cumulative accumulation sign for different j) and the sum of the second evaluation quantity ˜ ~, which is the sum of the second evaluation quantity sj. The total evaluation amount and Σ S j are indicators indicating the influence of the birefringence on the entire projection optical system 100m of the imaging light beam 100m (change in the light pattern diameter and length of the transmitted light according to the birefringence). That is, if the value of the total evaluation amount sRj is equal to the value of the total evaluation amount, the light pattern diameter and length changes of R polarized light and ytterbium polarized light are equal, and therefore, the wavefronts also become the same. More specifically, since the crystal lens 105 and 106 are aligned with the crystal axis [001] and the optical axis AX100, the diameter of the imaging light pattern is 105 m and 106 m. Lj and the above-mentioned angle ej, and by substituting those data into the expressions (3) and (4), the evaluation quantities Rj and Sj of each of the crystal lenses 105, 106 are obtained. In addition, regarding the crystal lens 10,9, since the crystal axis [111] and the optical axis AX 100 are aligned, the optical pattern diameter length y and The above-mentioned angles ㊀ ′ and 0 j ′ are obtained by substituting those data into the expressions (丨) and (2) to obtain the evaluation amounts Rj & Sj of each of the crystal lenses 109 and 110, respectively. Then, the total evaluation amounts ZRj and ZSj regarding the total of the evaluation amounts Rj and sj for all the crystalline lenses 1 05, 106, 109, and 11 are obtained. The wavefront aberration in the imaging beam (100L ~ 100R) from 1 point on the optical network 101 to 1 point on the wafer 102 is to determine the optical pattern diameter length between the imaging rays In this case, it is necessary to obtain SRj and sSj for each imaging ray (by imaging ray at different positions on the pupil plane PP). And ZRj and Σ S j are fixed for all the imaging rays respectively, and if Σ rj and ς S j _____- 22 ^ ___ This paper size uses the Chinese National Standard (CNS) A4 specification (210 X 297 male father) 584898
對於全部的成I光線互相地相等㈣,在纟像光束(i〇〇l 〜100R)變成沒有波面象差。 然後,滿足所謂2Rj及sSj對於全部的成像光線分別固 定且Σ Rj和Σ Sj對於全部的成像光線互相地相等之該關 係,藉由將投影光學系統100的設計做最佳化之事,也就 是藉由將各透鏡的厚度、曲率半徑、間隔等做最佳化,及 以結晶透鏡的光軸為中心的旋轉角度做最佳化之事,能夠 實現由於複折射的無波面象差之光學系統。再者,將sRj 及ESj對於全部的成像光線分別完全固定,且將sRj及ssj 對於全邵的成像光線互相地完全做成相等為困難之事。 實際上,藉由將ΣΜ及2Sj的誤差範圍控制到曝光波長λ 的1/2以下程度,實用上能夠實現不接受複折射的不良影 響的光學系統。換言之,將Σ Rj與一定值之差的絕對值及 Σ Sj與一足值的差的絕對值,控制對於聚光在像表面上或 物體表面上的至少任意的i點的成像光束中的光線比λ /2 小的同時,藉由及sSj之差的絕對值,控制對於聚 光在像表面上或物體表面上的至少任意的丨點的成像光束 中的光線比;I /2小,能夠實現實質地不接受複折射的不良 影響的光學系統。 但疋’假设該標準值;I / 2為k 1因子=〇 · 3 5程度的細小性 的圖案(線寬度=k 1 X λ/Ν A)的時候,為了是不給成像特性 大的影響的容許值,曝光圖案的尺寸更小的時候,更嚴格 的標準是有必要的。例如,使用位相移動光網,曝光k丨因 子=0·2程度的細小性的圖案的時候,不將Σ Rj及Σ s j的誤 -23- 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) " - 584898 A7 _____B7 五、發明説明(21 ) 差範圍對於全部的成像光線控制到曝光波長λ的1/2〇以下 程度的話,變成很難得到良好的成像特性。 不過’貫際上涉及到成像光束内的全面(瞳孔面ρ ρ的全 面),實現如上述的R偏光及θ偏光很難。但是,要是每個 成像光束的一部分(瞳孔面ΡΡ的一部分)分開而思考的話, 如此的R偏光及Θ偏光為對於現實的X偏光及γ偏光,以旋 轉行列為變換關係而被結合的偏光。因此,假設R偏光及θ 偏光’在該偏光狀態沒有波面象差的光學系統,為以其偏 光狀態及旋轉行列的關係而結合的現實的X偏光,及對於 Y偏光的光束也沒有波面象差的光學系統,如上所述,使 用基於R偏光及0偏光的評價指標沒有特別的問題。 可是,在上述的式子(1)〜(6)含有c〇j(= 0 j-pj)之項, 亦即含有0j之項的存在,意味著藉由光束與X軸方向所成 角度’複折射的影響有變動。也就是說,這些項的值,藉 由變更角度參數ω j中的角度pj,亦即對於一定的軸方向 的結晶透鏡G j的旋轉角度,能夠使其變動。 在以結晶軸[1 1 1]為光軸的結晶透鏡,因為Rj及Sj有與 s i η (3 coj)成比例之項,所以對於透鏡的旋轉有3次旋轉對 稱的值。此為意味著在Rj及Sj給與的光圖案徑變化量,以 透鏡旋轉的120度為周期變動。因此,要是使用2片以結晶 軸[1 11]為光軸的結晶透鏡的話,對於一邊的透鏡另一邊 的透鏡以光軸為中心只有60度或180度(==60+ 120)相對旋 轉,在XY平面内設定雙方的結晶軸[1- 10]只有60度或180 度角度性地分開的話,兩透鏡的3次旋轉對稱成分被抵 -24-_ 本紙張尺度適為中國國家標準(CNS) A4規格(21〇x297公H " · 584898 A7 ______B7 五、發明説明(22 ) 銷,知道對於各成像光束將SRj和Σ Sj作成相等是很方 便。 同樣地,在以結晶軸[00 1 ]為光軸的結晶透鏡,因為Rj 及Sj有與cos(4〇〇j)成比例之項,所以對於透鏡的旋轉有4 次旋轉對稱的值。此情況,Rj及Sj以透鏡旋轉的90度為 周期做變動。因此,要是使用2片以結晶軸[〇〇 1]為光軸的 結晶透鏡的話,另一邊的透鏡對於一邊的透鏡以光軸為中 心只有45度或135度( = 45+90)相對旋轉,在XY平面内設 定雙方的結晶軸[100]只有45度或135度角度性地分開的 話’兩透鏡的4次旋轉對稱成分被抵銷,知道對於各成像 光束將ZRj和ZSj作成相等是很方便。 再者’在以結晶軸[〇 1 1 ]為光軸的結晶透鏡,因為Rj及 Sj有與cos(4c〇j)成比例之項及與C〇s(2〇)j)成比例之項的兩 邊。此情況,使用4片以結晶軸[0 11 ]為光軸的結晶透鏡, 設定各透鏡以光軸為中心各45度相對旋轉,若X Y面内各 個結晶軸[100]設定為分別離開45度,各透鏡的旋轉非對 稱成分被抵銷,知道對於各成像光束將Σ Rj和Σ Sj作成相 等是很方便。 當然,根據上述2片的一對透鏡的旋轉對稱成分抵銷、 或4片的一對透鏡的旋轉非癖稱的抵銷,被並不限定適用 於2片的透鏡、或4片的透鏡。因此,一邊調整以多數的結 晶透鏡的光軸為中心的回轉角度、厚度、曲率半徑、間隔 等,一邊如果設定整體性SRj及Σ S j變成相等的話就可 以,此乃無庸置疑。 __-25^_____ 本纸張尺度適用中國國家標準(CNS) A4規格(210 X 297公发) 584898For all of the I-rays being equal to each other, there is no wavefront aberration in the image beam (iOOl ~ 100R). Then, the relationship that 2Rj and sSj are fixed for all imaging rays and Σ Rj and Σ Sj are equal to each other for all imaging rays is satisfied, and the design of the projection optical system 100 is optimized, that is, By optimizing the thickness, radius of curvature, interval, etc. of each lens, and optimizing the rotation angle around the optical axis of the crystal lens, an optical system without wavefront aberration due to birefringence can be realized . Furthermore, it is difficult to completely fix sRj and ESj to all the imaging rays, and to make sRj and ssj completely equal to each other. In fact, by controlling the error ranges of ΣM and 2Sj to less than 1/2 of the exposure wavelength λ, an optical system that does not accept the adverse effects of birefringence can be practically realized. In other words, the absolute value of the difference between Σ Rj and a certain value and the absolute value of the difference between Σ Sj and a sufficient value are used to control the light ratio in the imaging beam focused on at least an arbitrary i point on the image surface or on the object surface. λ / 2 is small, and the absolute value of the difference from sSj is used to control the light ratio of the imaging beam focused on at least any of the 丨 points on the image surface or the surface of the object; I / 2 is small to achieve An optical system that does not substantially accept the adverse effects of birefringence. But 疋 'assumes this standard value; I / 2 is a pattern with a degree of fineness of k 1 factor = 0.35 (line width = k 1 X λ / Ν A), so as not to greatly affect the imaging characteristics When the size of the exposure pattern is smaller, stricter standards are necessary. For example, when using a phase-shifting optical network and exposing a pattern with a degree of fineness of k 丨 factor = 0 · 2, the errors of Σ Rj and Σ sj will not be mistaken. 23- This paper applies the Chinese National Standard (CNS) A4 specification ( 210X297 mm)-584898 A7 _____B7 V. Description of the invention (21) If the difference range is controlled to less than 1/20 of the exposure wavelength λ for all imaging rays, it becomes difficult to obtain good imaging characteristics. However, it is generally related to the whole surface of the imaging beam (the entire surface of the pupil plane ρ ρ), and it is difficult to realize the R polarized light and theta polarized light as described above. However, if a part of each imaging beam (part of the pupil plane PP) is considered separately, such R polarized light and Θ polarized light are polarized light that is combined with the rotation ranks as a transformation relationship for the real X polarized light and the gamma polarized light. Therefore, it is assumed that the R polarized light and theta polarized light have no wavefront aberration in this polarized state, and the real X polarized light combined with the relationship between its polarized state and rotation ranks, and there is no wavefront aberration for the Y polarized light beam. As described above, there is no particular problem in using an optical system using an evaluation index based on R polarization and 0 polarization. However, in the above formulas (1) to (6), the term including c0j (= 0 j-pj), that is, the existence of the term including 0j, means that the angle formed by the light beam and the X-axis direction is formed. ' The effect of birefringence varies. That is, the values of these terms can be changed by changing the angle pj in the angle parameter ω j, that is, the rotation angle of the crystal lens G j in a certain axial direction. In a crystal lens with the crystal axis [1 1 1] as the optical axis, since Rj and Sj have terms proportional to s i η (3 coj), there are three rotationally symmetrical values for the rotation of the lens. This means that the amount of change in the light pattern diameter given to Rj and Sj fluctuates periodically with 120 degrees of lens rotation. Therefore, if two crystal lenses with the crystal axis [1 11] as the optical axis are used, the lens on one side and the lens on the other side only rotate relative to the optical axis by 60 degrees or 180 degrees (== 60 + 120). If the crystal axes [1- 10] on both sides are set in the XY plane only at 60 or 180 degrees, the 3 rotation-symmetric components of the two lenses will be eliminated. -24-_ This paper is suitable for the Chinese national standard (CNS ) A4 specifications (21 × 297 male H " · 584898 A7 ______B7 V. Description of the invention (22) pin, it is convenient to know that SRj and Σ Sj are made equal for each imaging beam. Similarly, the crystal axis [00 1 ] Is a crystal lens with an optical axis. Since Rj and Sj have terms proportional to cos (400j), there are 4 times of rotational symmetry for the rotation of the lens. In this case, Rj and Sj are 90 times the lens rotation. The degree is changed by the period. Therefore, if two crystal lenses with the crystal axis [〇〇1] as the optical axis are used, the lens on the other side is only 45 degrees or 135 degrees with the optical axis as the center (= 45 degrees) +90) Relative rotation, set the crystal axis of both sides in the XY plane [100] is only 45 degrees or 1 If the angles are separated at 35 degrees, 'the 4th rotational symmetry components of the two lenses are cancelled out, and it is convenient to know that ZRj and ZSj are made equal for each imaging beam. Furthermore,' the crystal axis [〇1 1] is the optical axis. , Because Rj and Sj have two sides of a term proportional to cos (4c0j) and a term proportional to Cos (2〇) j). In this case, use 4 crystal lenses with the crystal axis [0 11] as the optical axis, and set each lens to rotate relative to the optical axis at 45 degrees relative to each other. If each crystal axis [100] in the XY plane is set to be 45 degrees away from each other The rotational asymmetric component of each lens is cancelled, and it is convenient to know that Σ Rj and Σ Sj are made equal for each imaging beam. Of course, the rotation-symmetric component cancellation of the two lens pairs or the rotation non-common cancellation of the four lens pairs is not limited to the two lens or four lens application. Therefore, while adjusting the rotation angle, thickness, radius of curvature, interval, etc. around the optical axis of most crystal lenses, it is not necessary to set the global SRj and ΣSj to be equal. __- 25 ^ _____ This paper size applies to China National Standard (CNS) A4 (210 X 297)
例如,使用以結晶軸[111 ]為光軸的厚度大約相等的3片 透鏡,也能夠抵銷複折射的旋轉非對稱的成分。此情況, 在以1片透鏡的旋轉非對稱的周期,為如前所述的120度。 因此’ 3片透鏡具有以光軸作為中心互相地4〇度分開的旋 轉位置的關係,亦即藉由設定在垂直於面内的結晶軸[U 〇] 的方向是以光軸為中心具有互相地各40度分開的旋轉位置 的關係,3片透鏡的旋轉非對稱性變成分別各1/3周期錯開 位置而互相重疊。 此時,在3片的透鏡,對於第1個透鏡的結晶軸[丨_丨〇]的 方向第2個透鏡的結晶軸[1 -1 〇]的方向具有以光軸作為中心 在一定的方向只有40度旋轉之關係,第3個透鏡的結晶軸 [1 -10]的方向對於第2個透鏡的結晶軸[1 _ 1 〇]的方向具有以 光軸作為中心在相同一定的方向只有4〇度旋轉之關係。換 句話說,各透鏡的結晶軸[1-1〇]的旋轉角度,要是以3片透 鏡中之1的透鏡(=0度)為基準的話,變成〇度、4〇度、8〇 度。 3片的各透鏡的折射力弱且在各透鏡中的光束的進行方 向為大約固定的時候,在上述的式子(丨)及(2)的 sin(3〇)j),對於3片的透鏡以下列的式子(21)、(22)、 分別表示。在此,s i η的參數的單位為度。 sin(3〇〇l) (21) sin{3(col+40)} = sin(3col+120) (22) sin{3(col+80)} = sin(3col+240) (23) 再者,能夠將式子(22)及(23),如下列的式子(22,)及 -26- 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 584898 A7 B7 五、發明説明(24 ) (23乃所示改寫。 sin(3 〇〇 1x 1)x cos( 120)+cos(3 ω 1)x sin( 120) (22’) sin(3c〇lxl)xcos(240)+cos(3c〇l)xsin(240) (23,) 因此,式子(21)、(22)及(23)的總和,以下列的式子(24) 表示。 {l+cos( 120)+cos(240)} X sin(3 ω 1)+ {sin( 120)+ sin(240)} X c〇s(3 ω 1) (24) 在式子(24),l+cos(120)+cos(240)及 sin(l20)+sin(24〇) 皆為0。因此,對式子(21)、(22)及(23)的總和亦即(24)的 值就成為0。換言之,藉由設定具有以結晶軸[1 1 1 ]為光軸 的3片透鏡以光軸作為中心互相地4 0度分開的旋轉位置關 係,由於其抵銷作用能力除去複折射的旋轉非對稱成分。 然後’即使用這樣的三片透鏡組,也了解對各成像光束將 2Rj及ZSj作成相等為方便之事。 同樣地,使用以結晶軸[00 1 ]為光軸的厚度大約相等的3 片透鏡,也能夠抵銷複折射的旋轉非對稱的成分。此情 況’在以1片透鏡的旋轉非對稱的周期,為如前所述的9 〇 度。因此,具有3片透鏡以光軸作為中心互相地30度分開 的旋轉位置的關係,亦即藉由設定在垂直於面内的結晶軸 [100]的方向是以光軸為中心.具有互相地30度分開的旋轉 位置的關係,3片透鏡的旋轉非對稱性變成分別各1/3周期 錯開位置而互相重疊。 在上述的式子(3)及(4)的cos(4c〇j),對於3片的透鏡以下 列的式子(31)、(32)、(33)分別表示。在此,cos的參數的 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 584898 A7 B7 五、發明説明(25 ) 單位為度。 cos(4^1) (31) cos{4(6〇 1+30)}=cos(46; 1+120) (32) cos{4〇 1+60)}= cos(4o 1+240) (33) 再者,能夠將式子(32)及(33),如下列的式子(32,)及 (33·)所示改寫。 cos(46J l)xcos(120)-sin(46; l)xsin(120) (32') cos(46J l)xcos(240)-sin(4(jj l)xsin(240) (33’) 因此,式子(31)、(32)及(33)的總和,以下列的式子(34) 表示。 {1+cos(120)+cos(240)}xcos(46j l)-{sin(120)+sin(240)}xcos(46J 1) (34) 在式子(34),l+cos(120)+cos(240)及 sin(120)+sin(240) 皆為0。因此,對式子(31)、(32)及(33)的總和亦即(34)的 值就成為0。換言之,藉由設定具有以結晶軸[00 1 ]為光軸 的3片的透鏡以光軸作為中心互相地30度分開的旋轉位置 關係,由於其抵銷作用能夠除去複折射的旋轉非對稱成 分。然後,即使用這樣的3片透鏡組,也了解對各成像光 束將iRj及ESj作成相等為方便之事。 再者,對於以結晶軸[111 ]為光軸的透鏡及以結晶軸 [00 1]為光軸的3片透鏡減低i轉非對稱的複折射的方法, 並不限定在藉由上述的2片的透鏡或3片的透鏡的互相旋轉 的旋轉非對稱成分的抵銷。例如使上述的方法再發展的 話,結晶透鏡具有周期/3度的旋轉非對稱性的時候,藉由 使用具有以光軸作為中心互相地各(β/Q)度分開了的旋轉 -28- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X297公釐)For example, using three lenses having approximately the same thickness with the crystal axis [111] as the optical axis can also counteract the rotationally asymmetric component of birefringence. In this case, it is 120 degrees as described above in a cycle in which the rotation of one lens is asymmetric. Therefore, the three lenses have a relationship of rotation positions separated by 40 degrees from each other with the optical axis as the center, that is, by setting the direction of the crystal axis [U 〇] perpendicular to the plane with the optical axis as the center, The relationship between the rotation positions separated by 40 degrees from the ground causes the rotation asymmetry of the three lenses to be shifted from each other by 1/3 cycles and overlap each other. At this time, for the three lenses, the direction of the crystal axis [丨 _ 丨 〇] of the first lens has the direction of the crystal axis [1 -1 〇] of the second lens with the optical axis as the center in a certain direction. There is only a 40 degree rotation relationship. The direction of the crystal axis [1 -10] of the third lens has only 4 with the optical axis as the center in the same certain direction with respect to the direction of the crystal axis [1 _ 1 〇] of the second lens. The relationship of 〇 degree rotation. In other words, the rotation angle of the crystal axis [1-10] of each lens is 0 °, 40 °, and 80 ° based on the lens of one of the three lenses (= 0 °). When the refractive power of each of the three lenses is weak and the direction of light flux in each lens is approximately constant, the sin (3〇) j) of the above formulas (丨) and (2), for three lenses The lenses are represented by the following formulas (21), (22), respectively. Here, the unit of the parameter of s i η is degree. sin (3〇〇l) (21) sin {3 (col + 40)} = sin (3col + 120) (22) sin (3 (col + 80)) = sin (3col + 240) (23) and , Can formula (22) and (23), such as the following formulas (22,) and -26- This paper size applies Chinese National Standard (CNS) A4 specifications (210X297 mm) 584898 A7 B7 V. Description of the invention (24) (23 is rewritten as shown. Sin (3 〇〇1x 1) x cos (120) + cos (3 ω 1) x sin (120) (22 ') sin (3c〇lxl) xcos (240) + cos (3c〇l) xsin (240) (23,) Therefore, the sum of the expressions (21), (22), and (23) is expressed by the following expression (24). {l + cos (120) + cos (240)} X sin (3 ω 1) + {sin (120) + sin (240)} X c〇s (3 ω 1) (24) In the formula (24), l + cos (120) + cos (240) and sin (l20) + sin (24〇) are both 0. Therefore, the sum of the expressions (21), (22), and (23), that is, the value of (24) becomes 0. In other words, By setting the rotation position relationship of three lenses with the crystal axis [1 1 1] as the optical axis, and the optical axis as the center separated by 40 degrees from each other, the rotationally asymmetric component of birefringence is removed due to its offsetting ability. Then 'even with this three lens group, It is convenient to make 2Rj and ZSj equal for each imaging beam. Similarly, using three lenses with approximately the same thickness with the crystal axis [00 1] as the optical axis can also counteract the rotationally asymmetric refraction. Component. In this case, the period of asymmetric rotation with one lens is 90 degrees as described above. Therefore, there is a relationship between the rotation positions of three lenses separated by 30 degrees from each other with the optical axis as the center. That is, by setting the direction perpendicular to the crystal axis [100] in the plane as the center of the optical axis. With the relationship of rotation positions separated by 30 degrees from each other, the rotation asymmetry of the three lenses becomes 1/3 each. Periods are staggered and overlap each other. In the above formulas (3) and (4), cos (4c0j) is represented by the following formulas (31), (32), and (33) for three lenses. Here, the paper size of the parameters of cos applies to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 584898 A7 B7 V. Description of the invention (25) The unit is degree. Cos (4 ^ 1) (31) cos {4 (6〇1 + 30)} = cos (46; 1 + 120) (32) cos {4〇1 + 60)} = cos (4o 1 + 240) (33) Furthermore, it is possible to change Promoter (32) and (33), as in the following equation (32) and (33 *) is rewritten as shown. cos (46J l) xcos (120) -sin (46; l) xsin (120) (32 ') cos (46J l) xcos (240) -sin (4 (jj l) xsin (240) (33') Therefore The sum of equations (31), (32), and (33) is represented by the following equation (34): {1 + cos (120) + cos (240)} xcos (46j l)-{sin (120 ) + sin (240)} xcos (46J 1) (34) In equation (34), l + cos (120) + cos (240) and sin (120) + sin (240) are both 0. Therefore, for The sum of the expressions (31), (32), and (33), that is, the value of (34) becomes 0. In other words, by setting three lenses with the crystal axis [00 1] as the optical axis, the optical axis is set. The rotation position relationship of the centers being 30 degrees apart from each other can remove the rotationally asymmetric component of birefringence due to its offsetting effect. Then, even with such three lens groups, it is also known that iRj and ESj are made equal for each imaging beam. For the sake of convenience, the method for reducing the i-symmetric asymmetric birefringence of the lens with the crystal axis [111] as the optical axis and the three lenses with the crystal axis [00 1] as the optical axis is not limited to The offset of the rotationally asymmetric components of the two lenses or the three lenses that are mutually rotating is canceled. If the method is further developed, when the crystal lens has a rotation asymmetry of / 3 degrees, by using rotations with (β / Q) degrees separated from each other with the optical axis as the center-28- This paper is applicable to China National Standard (CNS) A4 (210 X297 mm)
裝 訂Binding
584898 A7 B7584898 A7 B7
位置關係的Q片(Q疋2以上的任意整數)的結晶透鏡,由於 其抵銷作用能夠除去複折射的玫轉非對稱成分。 換各之,使用結晶軸[111 ]為光軸的Μ片(Μ是3以上的任 思的整數)的結晶透鏡的時候,藉由設定具有Μ片的透鏡是 以光軸作為中心互相地各(12〇/Μ)度分開的旋轉位置關 係 夠由於其抵銷作用除去複折射的旋轉非對稱成分。 具體地說’例如使用結晶軸[1 i 1 ]為光軸的的5片的結晶透 鏡的時候,藉由設定具有5片的透鏡是以光軸作為中心互 相地各24(= 120/5)度分開的旋轉位置關係,能夠抵銷複折 射的旋轉非對稱成分。 此外’使用結晶轴[〇 〇 1 ]為光轴的的N片(N是3以上的任 意的整數)的結晶透鏡的時候,藉由設定具有N片的透鏡是 以光轴作為中心互相地各(9〇/N)度分開的旋轉位置關係, 月&夠由於其抵銷作用除去複折射的旋轉非對稱成分。具體 地說’例如使用結晶軸[001]為光軸的6片的結晶透鏡的時 候’藉由設定具有6片的透鏡是以光軸作為中心互相地各 15( = 90/6)度分開的旋轉位置關係,能夠抵銷複折射的旋 轉非對稱成分。 再者’各結晶透鏡的旋轉角為在上述各值(丨2〇/μ,90/ Ν)加上旋轉非對稱的周期石也可以之事,係與上述的實施 形態一樣。一般來說,雖然為了抵銷複折射的旋轉非對稱 成分的透鏡的片數2片也可以,但是因為在上述的方法使 用3片以上的任意片數的透鏡,能夠抵銷複折射的旋轉非 對稱成分,所以比在透鏡的片數2片的時候給與在透鏡設 _ -29- 本紙張尺度適用中國國家標準(CNS) Α4規格(210X297公產)The positional relationship of the Q lens (any integer greater than Q 疋 2) of the crystalline lens can remove the birefringent asymmetric components due to its offsetting effect. In other words, when using M lenses (M is an integer of 3 or more) whose crystal axis [111] is the optical axis, the lenses having the M lens are set to each other with the optical axis as the center. The rotation position relationship separated by (120 / M) degrees is enough to remove the rotational asymmetric component of birefringence due to its offsetting effect. Specifically, for example, when using five crystalline lenses with the crystal axis [1 i 1] as the optical axis, the lens having five lenses is set to each other with the optical axis as the center 24 (= 120/5). The rotational position relationship separated by degrees can offset the rotational asymmetric component of birefringence. In addition, when using a N lens (N is an arbitrary integer of 3 or more) with a crystal axis [00] as the optical axis, the lenses having the N lens are set to each other with the optical axis as the center. (90 / N) degrees of rotation position relationship, due to its offset effect to remove the rotational asymmetric component of birefringence. Specifically, "for example, when using six crystalline lenses whose crystal axis [001] is the optical axis", the lens having six lenses is set at 15 (= 90/6) degrees apart from each other with the optical axis as the center. The rotational position relationship can offset the rotational asymmetric component of birefringence. In addition, the rotation angle of each crystal lens may be the same as the above-mentioned embodiment, as long as it is possible to add a rotationally asymmetric periodic stone to the above-mentioned values (20 / μ, 90 / N). In general, although the number of lenses with a rotationally asymmetric component to counteract birefringence may be two, the method described above uses an arbitrary number of lenses of three or more to offset the rotational non-refractive index. Symmetrical components, so when the lens number of 2 pieces is given to the lens set _ -29- This paper size applies Chinese National Standard (CNS) Α4 specifications (210X297)
裝 訂Binding
584898 A7 B7584898 A7 B7
五、發明説明( 計限制變少是為很方便。也就是說,在對於各成像光束將 Σ Rj及Σ Sj作成相等,能夠使用由這樣的多數片的結晶透 鏡所成的透鏡群。再者,如上所述’雖然各透鏡的複折射 力弱並且各透鏡中的光束的行進方向大約一定的時候,最 能夠得到上述抵銷效果,但是在那個以外的時候也能夠得 到上述抵銷效果乃無庸置疑。 可是,以結晶軸[0 1 1]為光軸的透鏡的時候,如上述的式 子(5)及(6)所示,作為旋轉非對稱之項,有與cosHoj)成 比例之項及與cos(2c〇j)成比例之項。該2項之中,與 cos(2c〇j)成比例之項為有180度旋轉周期的成分。因此, 如前所述,藉由使以結晶軸[〇 11 ]為光軸的大約相等的厚度 的2片透鏡互相地90度旋轉光軸中心而配置(90度旋轉2片 透鏡群),能夠抵銷旋轉非對稱成分。再者,由同樣的研 死,使用以結晶軸[〇 11 ]為光軸的大約相等的厚度的3片的 透鏡,也能夠抵銷旋轉非對稱成分。此時,3片的透鏡具 有以光軸為中心互相各60度分開的旋轉位置關係,亦即藉 由設定(6 0度旋轉3片透鏡群)在垂直於光軸的面内的結晶 軸[100]的方向具有以光軸為中心互相各6〇度分開的旋轉位 置關係,能夠抵銷旋轉非對稱成分。 更一般地說,在除去與cos(2c〇j)成比例的旋轉不對稱 項’设疋使用以結晶軸[〇 11 ]為光軸的L片(L是3以上的任 意的整數)的透鏡,L片的透鏡,具有以光軸為中心互相各 (1 80/L)度分開的旋轉位置關係就可以。如果根據該方 法,在以結晶軸[011 ]為光軸的透鏡,因為能夠選定將為了 -30- 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 584898 A7 B7 五、發明説明(28 抵銷與C〇s(2〇)j)成比例的旋轉不對稱項的透鏡片數為任音 之值,給透鏡設計的限制條件變少而較方便。 此外,與cos(4ω j)成比例的旋轉不對稱項,與以結晶轴 為光軸的透鏡一樣,藉由使用以光軸為中心使互相45产地 旋轉的2片透鏡能夠抵銷。再者,由同上述一樣的研究, 使用以結晶軸[011 ]為光軸的大約相等的厚度的3片透鏡, 也能夠抵銷旋轉非對稱成分。此時,3片的透鏡具有以光 軸為中心互相各30度分開的旋轉位置關係,亦即藉由設定 (30度旋轉3片透鏡群)在垂直於光軸的面内的結晶軸[ι〇〇] 的方向具有以光軸為中心互相各3〇度分開的旋轉位置關 係,能夠抵銷旋轉非對稱成分。 更一般地說,在除去與cos(4c〇j)成比例的旋轉不對稱 項,設定具有以結晶軸[〇 1 1 ]為光軸的p片(P是2以上的任 意的整數)的透鏡,P片的透鏡具有以光軸為中心互相各 (90/P)度分開的旋轉位置關係就可以。如果根據該方法, 在以結晶軸[0 1 1 ]為光軸的透鏡,因為能夠選定將為了抵銷 與C〇s( 4c〇j)成比例的旋轉不對稱項的透鏡片數為任意之 值,給透鏡設計的限制條件變少而較方便。 再者,以結晶軸[011]為光軸的時候,實際上為了抵消 與C〇S(2c〇j)成比例的旋轉非對稱成分,至少準備p组由沿 光軸鄰近^配的i述的L片的透鏡或2片的透鏡所成的透鏡 群。然後藉由給予在各透鏡群之間以光軸為中^ (術^度 的相對旋轉,除去與cos(4〇〇j)成比例之項是很理想。即使 在該方法,因為不限定為了抵消與cos(4(〇j)成比例的旋轉 家標準(CNS)A4規格(21C)X297公黎广·--- 584898V. Description of the invention (It is convenient to reduce the number of restrictions. In other words, when Σ Rj and Σ Sj are made equal for each imaging beam, a lens group made of such a large number of crystalline lenses can be used. As described above, 'Although the refraction power of each lens is weak and the traveling direction of the light beam in each lens is approximately constant, the above-mentioned offsetting effect is best obtained, but it is inevitable that the above-mentioned offsetting effect can be obtained at other times However, when using the lens with the crystal axis [0 1 1] as the optical axis, as shown in the above equations (5) and (6), as the term of rotational asymmetry, there is a term proportional to cosHoj). And a term proportional to cos (2c〇j). Among the two terms, the term proportional to cos (2c〇j) is a component having a 180-degree rotation period. Therefore, as described above, by arranging two lenses of approximately the same thickness with the crystal axis [〇11] as the optical axis, rotating the optical axis centers by 90 degrees (rotating the two lens groups at 90 degrees), Offset the rotational asymmetric component. In addition, from the same study, the use of three lenses having approximately the same thickness with the crystal axis [0 11] as the optical axis can also offset the rotational asymmetric component. At this time, the three lenses have a rotational position relationship of 60 degrees apart from each other with the optical axis as the center, that is, by setting (rotating three lens groups at 60 degrees) the crystal axis in a plane perpendicular to the optical axis [ The direction of 100] has a rotational position relationship of 60 degrees apart from each other around the optical axis, and can offset the rotational asymmetric component. More generally, a lens with a rotation asymmetrical proportion proportional to cos (2c〇j) is set to use an L-piece (where L is an arbitrary integer of 3 or more) with the crystal axis [011] as the optical axis. It is sufficient for the L lens to have a rotational position relationship separated from each other (1 80 / L) degrees around the optical axis. If according to this method, the lens with the crystal axis [011] as the optical axis can be selected for -30- This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) 584898 A7 B7 V. Description of the invention (28 offsets the number of lenses with a rotational asymmetry proportional to Cos (2〇) j) is the value of any tone, which makes the design of the lens less restrictive and more convenient. In addition, the rotational asymmetry term proportional to cos (4ω j) is the same as a lens with the crystal axis as the optical axis, and can be offset by using two lenses that rotate around 45 places with the optical axis as the center. Furthermore, from the same research as above, the use of three lenses having approximately the same thickness with the crystal axis [011] as the optical axis can also offset the rotational asymmetric component. At this time, the three lenses have a rotational position relationship of 30 degrees apart from each other around the optical axis, that is, by setting (30 degree rotation of the three lens groups) the crystal axis in a plane perpendicular to the optical axis [ι The direction of 〇〇] has a rotational position relationship of 30 degrees apart from each other with the optical axis as the center, and can offset the rotational asymmetric component. More generally, a lens having a p-piece (P is an arbitrary integer of 2 or more) with a crystal axis [〇1 1] as an optical axis is removed after removing the rotational asymmetry term proportional to cos (4c〇j). It is sufficient that the lens of the P lens has a rotation position relationship separated from each other (90 / P) degrees around the optical axis. If according to this method, the lens with the crystal axis [0 1 1] as the optical axis, the number of lenses that can be selected to offset the rotational asymmetry term proportional to C0s (4c〇j) is arbitrary. Value, it is more convenient to design the lens with fewer restrictions. In addition, when the crystal axis [011] is used as the optical axis, in order to actually offset the rotational asymmetric component proportional to COS (2c〇j), at least the p group is prepared to be described adjacently along the optical axis. Lens group consisting of L lens or 2 lenses. Then, by giving a relative rotation with the optical axis as the center between each lens group, it is ideal to remove the term proportional to cos (400j). Even in this method, it is not limited to Cancel the spinner standard (CNS) A4 specification (21C) X297 Gongguang which is proportional to cos (4 (〇j) --- 584898
A7 _______B7發明説明(29^) ^ 不對稱項的透鏡群為2個群,也能夠使用3群以上的透鏡 群,所以對於透鏡設計的限制條件變少而較方便。再者兄 在本實施形態,雖然為了抵銷複折射的旋轉不對稱成分的 透鏡片數為2片也可以,但是在以上述的方法因為使用3片 以上的任意片數的透鏡,所以比在透鏡的片數為2片的情 況給與透鏡設計限制少而令人滿意。 如上所述,在藉由以多數片的透鏡的光軸為中心的旋轉 解除複折射的影響,將上述多數片的各鏡片的旋轉方向對 於上述一定的角度控制在±4度左右以内為理想。旋轉角度 的设定誤差變成比該容許值更大的話,由於本發明的複折 射的解除效果減少,進而由於複折射造成成像性能惡化而 有問題。此外,對於與光軸大約應該一致的指定的結晶軸 的光軸的方向誤差,也是控制在士4度左右以内為理想。指 定的結晶軸及光軸的角度的設定誤差變成比該容許值更大 的話,與上述的情況一樣地,由於殘餘複折射造成成像性 能惡化而有問題。 此為在不論使用以3片以上的透鏡所成的結晶透鏡解除 複折射的情況’或使用以2片的透鏡所成的結晶透鏡解除 複折射的情況都是一樣的。但是,該± 4度以内的角度誤差 範圍’與前述的標準同樣地,為設想^因子=〇 35左右的 細微程度的圖案(圖案寬度==k 1 X λ/Ν A)時候的容許角度誤 差範圍,在有必要騰寫比此更微細的圖案的光學系統,有 必要將上述指定的結晶軸與光軸的上述的角度誤差範圍弄 小。例如,使用位相移動光網,曝光u因子=〇.2左右的細 -32 - 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公DA7 _______ B7 Description of the Invention (29 ^) ^ The lens group of the asymmetric term is two groups, and three or more lens groups can also be used, so there are fewer restrictions on lens design and it is more convenient. Furthermore, in this embodiment, although the number of lenses of the rotationally asymmetric component for offsetting birefringence may be two, in the above-mentioned method, since an arbitrary number of lenses of three or more is used, it is better than The case where the number of lenses is two is satisfactory because there are few restrictions on lens design. As described above, the effect of birefringence is removed by rotation around the optical axis of the lens of the plurality of lenses, and the rotation direction of each lens of the plurality of lenses is preferably controlled within ± 4 degrees with respect to the predetermined angle. If the setting error of the rotation angle becomes larger than the allowable value, the cancellation effect of the complex refraction of the present invention is reduced, and further, the imaging performance is deteriorated due to the complex refraction, which causes a problem. In addition, it is also desirable to control the direction error of the optical axis of a specified crystal axis that should be approximately the same as the optical axis within about 4 degrees. If the setting errors of the specified crystal axis and optical axis angles are larger than the allowable values, as in the case described above, there is a problem that the imaging performance is deteriorated due to the residual birefringence. This is the same regardless of the case where the birefringence is removed using a crystalline lens made of three or more lenses or the case where the birefringence is removed using a crystalline lens made of two lenses. However, the angular error range within ± 4 degrees is the same as the above-mentioned standard. It is a permissible angular error when a subtle pattern (pattern width == k 1 X λ / Ν A) of ^ factor = 〇35 is assumed. For an optical system in which it is necessary to write a finer pattern than this, it is necessary to reduce the above-mentioned angular error range of the crystal axis and the optical axis specified above. For example, using a phase-shifting optical network, the exposure u factor = about 0.2 is fine -32-This paper size is applicable to China National Standard (CNS) A4 specifications (210X297mm D
裝 訂Binding
線 584898Line 584898
微程度的圖案的時候,最好將這些的角度誤 土2度以下。 又p二 已乍為For slight patterns, it is best to misalign these angles to less than 2 degrees. P p already
相反地,如果是以kl因子=〇.5左右的圖案為光學系統 的話,即使將這些的角度誤差一起放鬆至士6度,實用上, 也能夠的得到充分的成像性能。再者,如此地,為了嚴密 地管理結晶軸的方向,在結晶透鏡的材料的結晶材料的製 造工序、結晶透鏡的加工(研削·研磨等)工序,將具有接 近結晶的格子的常數的波長的乂光線對結晶照射,講求測 量其曲折圖案而確認結晶軸方向的手段,亦即結晶軸方向 確I忍手段令人滿意。 裝 訂Conversely, if a pattern with a factor of about kl = 0.5 is used as the optical system, even if these angle errors are relaxed to ± 6 degrees, practically, sufficient imaging performance can be obtained. Furthermore, in order to strictly control the direction of the crystal axis, in the manufacturing process of the crystalline material of the material of the crystalline lens and the processing (grinding, grinding, etc.) of the crystalline lens, the crystal having a constant wavelength close to the lattice of the crystal is乂 Light irradiates the crystal, and it is necessary to measure the meandering pattern to confirm the direction of the crystal axis, that is, the direction of the crystal axis is satisfactory. Binding
再者,如上所述,使以相同的結晶軸為光軸的透鏡群相 對旋轉光軸中心,抵銷除去那些的旋轉非對稱成分,抵銷 芫全地被達成的時候,變成只有不含式子中的. 之項影響ERj及ESj。 ⑴ 在光軸與結晶軸[111]被設定為一致地的結晶透鏡, 只有不含ω j之項影響的時候,第丨個的評價量R』,及第2 個的評價量Sj,’以下列的式子(7)及(8)分別表示。In addition, as described above, when the lens group having the same crystal axis as the optical axis is relative to the center of the rotating optical axis, those rotational asymmetric components are eliminated to eliminate the offset. The. In the subsection affects ERj and ESj. ⑴ When the optical axis and the crystal axis [111] are set to be the same crystalline lens, only when there is no influence of the term of ω j, the evaluation value R ″ of the first one and the evaluation value Sj of the second one are less than The expressions (7) and (8) of the columns are respectively expressed.
Rj'= a ><Ljx56x{l-cos(40j)}/192 ⑺Rj '= a > < Ljx56x {l-cos (40j)} / 192 ⑺
Sjf= a xLjx32x{l-c〇s(29j)}/192 ⑻ 此外,在光軸與結晶軸[〇〇丨]為被設定一致地的結晶透 鏡Gj,只有不含〇;』之項影響的時候,第丨個的評價量Rj· 及第2個的評價量s j ’,以下列的式子(9)及(丨〇)分別表示。Sjf = axLjx32x {lc〇s (29j)} / 192 ⑻ In addition, when the optical axis and the crystal axis [〇〇 丨] are set to be the same as the crystalline lens Gj, only when the item excluding 〇; is not affected, The first evaluation amount Rj · and the second evaluation amount sj 'are expressed by the following formulas (9) and (丨 0), respectively.
Rj,== a xLjx-84x{l-cos(49j)}/192 ⑼Rj, == a xLjx-84x {l-cos (49j)} / 192 ⑼
Sj — cl xLjx-48x{l-cos(20j)}/192 (i〇) ______ ·33- 本紙張尺度適财@國家標準(CNS) A4規格(2ι〇 X 29?公爱j- 584898 A7 ______ B7_ 五、發明説明(31 ) 再者,在光軸與結晶軸[011]被設定為一致地的結晶透 鏡Gj,只有不含ω j之項影響的時候,第1個的評價量Rj, 及第2個的評價量Sj,,以下列的式子(11)及(12)分別表 7J> 〇Sj — cl xLjx-48x {l-cos (20j)} / 192 (i〇) ______ 33- This paper is suitable for financial standards @ National standard (CNS) A4 specifications (2ι〇X 29? Public love j- 584898 A7 ______ B7_ V. Description of the invention (31) Furthermore, when the optical axis and the crystal axis [011] are set to be the same as the crystal lens Gj, and there is no influence of the term ω j, the first evaluation amount Rj, and The second evaluation value Sj is shown in the following formulas (11) and (12), respectively. Table 7J >
Rj - a xLjx21x{l-c〇s(40j)}/192 (11)Rj-a xLjx21x {l-c〇s (40j)} / 192 (11)
Sj,== a xLjxl2x{l-c〇s(20j)}/192 (12) 如上所述,不論以那個結晶軸為光軸,在包含Rj,中的 {l-cos(4ej)}之項的係數,與包含Sj,中的{l-cos(2ej)}之 項的係數之間,有成立7: 4的關係。此外結晶軸[111]為光 軸的結晶透鏡、結晶軸[001]為光軸的結晶透鏡、及結晶 軸[〇 1 1 ]為光軸的結晶透鏡之間,無論關於Rj,的值及s j,的 值的任何一個,成立著8: -12: 3的關係。 因此,使以相同的結晶軸為光軸的透鏡群相對旋轉光軸 中心,抵銷那些的旋轉不對稱成分的時候,在結晶軸[111 ] 為光軸的透鏡群内的光圖案徑長的總和丨丨丨、結晶軸 [00 1 ]為光軸的結晶透鏡内的光圖案徑的總和sLO〇 1、及結 晶軸[0 11 ]為光軸的結晶透鏡内的光圖案徑長的總和Σ L 〇11 之間滿足下列的式子(13)所示的關係的時候,能夠將£ Rj 及ZSj —起當作〇。 8xiL111.12xzL001 + 3xEL011 = 〇 (13) 有關第1個實施形態投影光學系統1〇〇的情況,含有結晶 軸[001]為光軸的結晶透鏡(105,106)、及結晶軸[111]為光 軸的結晶透鏡(109,110),而不含結晶軸[〇丨丨]為光軸的結 晶透鏡。因此,將結晶透鏡1 〇5及結晶透鏡丨06當作大約互 --------- -34 - ____ 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公嫠) 584898 A7 B7 五、發明説明(32 ) 相相等的厚度,並且使雙方的透鏡相對光軸中心僅45度或 135度旋轉。此外,將結晶透鏡1〇9及結晶透鏡11〇當作大 約互相相等的厚度,並且使雙方的透鏡相對光軸中心僅6〇 度或180度旋轉。 然後,抵銷在結晶軸[001]為光軸的結晶透鏡 (105, 106)、與結晶軸[111]為光軸的結晶透鏡(109, 11〇)之 間複折射的旋轉非對稱分的時候,在成像光圖案徑丨〇5 m 及106 m的光圖案徑長的總和〇〇1、與成像光圖案徑 109m及110m的光圖案徑長的總和sL 111之間,滿足下列 的式子(14)所示的關係的時候,能夠將ΣΚ」·及Σ s」·一起當 作0。 8xiL111.12xiL001 = 0 (14) 也就是’將結晶透鏡1 〇 5及1 〇 6的厚度的總和,與結晶透 鏡109及110的厚度的總和之比大概設定在2: 3的話,能夠 大幅降低複折射的影響。再者,在上述的例子,對於成像 光束内的各成像光線,ERj及[Sj皆一致為〇。但是,也不 一定有必要經常使SRj及ESj與0—致,對於各成像光線使 Σ R j及Σ S j與一定的值大约一致的話就可以。因此,以其 一定的值為中心的Σ Rj及Σ Sj的誤差,如上所述,例如, 控制於λ/2、或λ/20的範圍,藉由設定各結晶透鏡的結晶 軸,旋轉角度pj,全部透鏡的厚度,曲率半徑,間隔等 等,能夠實現大幅抑制複折射的不良影響的光學系統。 再者,如上述的第1個實施形態,藉由抵銷各別旋轉不 對稱性的透鏡群的組合除去在光學系統全體的複折射的不 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公爹)-- 裝 訂Sj, == a xLjxl2x {lc〇s (20j)} / 192 (12) As mentioned above, regardless of which crystal axis is the optical axis, the coefficient of the {l-cos (4ej)} term in Rj There is a 7: 4 relationship between the coefficients and the coefficients containing the terms of {l-cos (2ej)} in Sj. In addition, between the crystal lens whose crystal axis [111] is the optical axis, the crystal lens whose crystal axis [001] is the optical axis, and the crystal lens whose crystal axis [〇1 1] is the optical axis, regardless of the value of Rj, and sj Any one of the values of, holds a relationship of 8: -12: 3. Therefore, when the lens group with the same crystal axis as the optical axis is relative to the center of the rotating optical axis to offset those rotational asymmetric components, the optical pattern in the lens group with the crystal axis [111] as the optical axis is longer. The sum 丨 丨 丨, the crystal axis [00 1] is the sum of the light pattern diameter in the crystal lens with the optical axis sLO〇1, and the crystal axis [0 11] is the sum of the light pattern diameter and length in the crystal lens with the optical axis Σ When L 〇11 satisfies the relationship shown in the following formula (13), £ Rj and ZSj can be regarded as 0 together. 8xiL111.12xzL001 + 3xEL011 = 〇 (13) In the case of the first embodiment of the projection optical system 100, the crystal lens (105, 106) including the crystal axis [001] is the optical axis, and the crystal axis [111] is the optical axis Crystal lens (109,110), and crystal lens without crystal axis [〇 丨 丨] is the optical axis. Therefore, the crystalline lens 105 and the crystalline lens 丨 06 are regarded as approximately mutual --------- -34-____ This paper size applies to the Chinese National Standard (CNS) A4 specification (210X 297 cm) 584898 A7 B7 V. Description of the invention (32) The thicknesses are equal, and the lenses of both sides are rotated by 45 degrees or 135 degrees with respect to the center of the optical axis. In addition, the crystal lens 109 and the crystal lens 11 are regarded as approximately equal in thickness to each other, and the lenses of both lenses are rotated by only 60 degrees or 180 degrees with respect to the center of the optical axis. Then, the rotational asymmetrical component of birefringence between the crystal lens (105, 106) whose crystal axis [001] is the optical axis and the crystal lens (109, 11) whose crystal axis [111] is the optical axis is canceled. At this time, between the sum of the light pattern diameters of the imaging light pattern diameters of 0.05 m and 106 m, and the sum of the light pattern diameters of the imaging light pattern diameters of 109 m and 110 m, sL 111, the following formula is satisfied: In the relationship shown in (14), ΣK ″ and Σ s ″ can be regarded as 0 together. 8xiL111.12xiL001 = 0 (14) That is, 'the ratio of the sum of the thicknesses of the crystal lenses 10 and 105 to the sum of the thicknesses of the crystal lenses 109 and 110 can be set to approximately 2: 3, which can greatly reduce the complex The effect of refraction. Furthermore, in the above example, for each imaging light beam in the imaging light beam, ERj and [Sj are all equal to 0. However, it is not always necessary to make SRj and ESj coincide with 0, and it is sufficient to make Σ R j and Σ S j approximately equal to a certain value for each imaging ray. Therefore, the errors of Σ Rj and Σ Sj centered on a certain value are, as described above, for example, controlled in the range of λ / 2 or λ / 20. By setting the crystal axis of each crystal lens, the rotation angle pj , The thickness of all lenses, the radius of curvature, the interval, etc., can achieve an optical system that significantly suppresses the adverse effects of birefringence. In addition, as in the first embodiment described above, the Chinese paper standard (CNS) A4 standard (CNS) A4 specification (in accordance with the Chinese National Standard (CNS) A4) is adopted to eliminate the birefringence in the entire optical system by the combination of lens groups that offset the respective rotational asymmetry. 210X297 father)-Binding
584898 A7 B7584898 A7 B7
良影響的方法’只不過是在本發明中的複折射的不良影響 的減低方法的一個例子。也就是,並不被限定於上述的旋 轉透鏡群的組合,在光學系統全體,只要設定在第1個的 總和評價量SRj和第2個的總和評價量Σ Sj對於聚光於像表 面或物體表面上面的任意的1點變成相等的話,當然用其 他的任何手法也是可以。 圖6係大略表示有關本發明的第2個實施形態的投影光學 系統的構成之圖。在第2個實施形態,對於波長為157 nm 的F2雷射在象差補正被最佳化過的反複折射型的投影光學 系統適用著本發明。在第2實施形態的投影光學系統 200(對應圖1的投影光學系統3〇〇),由光網2〇1(對應圖1的 光網1 0 1)上面1點射出的光束,通過沿著光軸A X 2 〇 〇 a被配 置的透鏡204,入射作為光圖案徑變更手段的反射鏡區 203 ° 在反射鏡區2 0 3的平面反射鏡2 0 3 a被折射的光束,通過 沿著光軸AX200b被配置的透鏡205及206,入射凹面反射 鏡220。在凹面反射鏡220被折射的光束,通過鏡片206及 205,再入射反射鏡區203。在反射鏡區203的平面反射鏡 203b被折射的光束,通過沿著光軸AX200a被配置的透鏡 207〜212,聚光於晶片202(f對應圖1的晶片1〇2)上面的1 點。如此一來,在晶片202上,形成被描繪於光網201的圖 案的投影像。在第2個實施形態,全部的透鏡2〇4〜2 12為 用氣化齊結晶(勞石)形成。 即使在如此的反射折射光學系統裡,也能藉由本發明 -36- 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公袭) 裝 訂The method of good influence 'is just one example of the method of reducing the bad influence of birefringence in the present invention. That is, it is not limited to the combination of the above-mentioned rotating lens group. In the entire optical system, as long as it is set to the first total evaluation amount SRj and the second total evaluation amount Σ Sj for focusing on the image surface or object If any one point on the surface becomes equal, of course, any other method is also possible. Fig. 6 is a diagram schematically showing a configuration of a projection optical system according to a second embodiment of the present invention. In the second embodiment, the present invention is applicable to a refraction-type projection optical system whose F2 laser having a wavelength of 157 nm is optimized for aberration correction. In the projection optical system 200 (corresponding to the projection optical system 300 of FIG. 1) of the second embodiment, a light beam emitted from a point on the optical network 2101 (corresponding to the optical network 1 0 1 of FIG. 1) passes along The lens 204 arranged on the optical axis AX 2 〇a enters the mirror region 203, which is a means for changing the diameter of the light pattern, and enters the light beam refracted by the plane mirror 2 0a at the mirror region 2 0. The lenses 205 and 206 on which the axis AX200b is arranged enter the concave mirror 220. The light beam refracted by the concave mirror 220 passes through the lenses 206 and 205 and then enters the mirror region 203. The light beam refracted by the plane mirror 203b in the mirror region 203 is condensed at one point on the wafer 202 (f corresponds to the wafer 102 of FIG. 1) through lenses 207 to 212 arranged along the optical axis AX200a. In this way, a projection image of a pattern drawn on the optical network 201 is formed on the wafer 202. In the second embodiment, all of the lenses 204 to 212 are formed of vaporized homogeneous crystals (Lawstone). Even in such a refracting and refraction optical system, the present invention can be bound with the paper standard of China National Standards (CNS) A4 (210X297 public attack).
584898 A7 ______ B7___ 五、發明説明(34~) ^ 的總和評價量SRj及sSj估算光學系列200的複折射的影 響,基於根據本發明的評價量Σ Rj及Σ Sj能夠控制投影光 學系統200的複折射的不良影響到最小。但是,關於第2個 實施形態的反射折射型的投影光學系統,要是一部份的結 晶透鏡被配置在與其它的結晶透鏡不同的光軸上的話,藉 由平面反射鏡203a,203b,凹面反射鏡220的反射作用,成 為以各結晶透鏡的光軸為中心的旋轉角度的基準的X軸的 方向也變動,以及對於結晶透鏡205,2〇6成像光圖案徑來往 其中之事’與第1個實施形態的情況不同。 以下’說明關於在反射折射型的投影光學系統2〇〇的 XYZ軸的設定。首先,如圖6所示,在光網20 1的附近沿著 光軸AX200a被配置的結晶透鏡204,與第1個實施形態一 樣,有設定X 0Y 0Z 0座標系統。也就是,設定著以沿著曝 光光線的行進方向的光軸AX200a向下為+ Z0軸的方向, 以在圖6紙張上水平向右的方向為+ X 〇軸的方向,以在圖6 圖紙面向前的方向+ γ 〇軸的方向。此時,Χ0Υ0Ζ0座標系 統為右手定則。如此一來,對於結晶透鏡204,以Χ0Υ0Ζ0 座標系統為基準求出上述的角度θ j、p j、0 j,藉由將那 些值代入式子(1)〜(6),算出評價量Rj及Sj。 --- 其次,成像光束於平面鏡203a反射後,光束之進行方向 如圖中向右,故以該光束之進行方向為+Z 1軸而設定 X1Y1Z1座標系。此時,χΐγ1Ζ1座標系藉由平面鏡2〇3a之 反射作用而變換成左手座標系(以下,稱”左手系”)。亦即 設定以沿著曝光光之進行方向之光軸AX200b之右方為+2 1 -----z2Lz__ 本紙張尺度適用中國國家標準(CISiS) A4規格(210X297公釐) --- 裝 訂584898 A7 ______ B7___ V. Summary of the invention (34 ~) ^ Evaluates the effect of the birefringence of the optical series 200 based on the total evaluations SRj and sSj. Based on the evaluations Σ Rj and Σ Sj according to the present invention, the complex of the projection optical system 200 can be controlled The adverse effects of refraction are minimal. However, in the case of the reflection-refraction-type projection optical system of the second embodiment, if a part of the crystal lens is arranged on an optical axis different from that of other crystal lenses, the plane reflection mirrors 203a, 203b, and concave reflection are used. The reflection effect of the mirror 220 also changes the direction of the X-axis, which is the reference of the rotation angle around the optical axis of each crystal lens, and the path of the imaging light pattern of the crystal lens 205,206 is the same as the first. The situation of each embodiment is different. Hereinafter, the setting of the XYZ axis of the reflection-refractive projection optical system 2000 will be described. First, as shown in Fig. 6, a crystal lens 204 arranged along the optical axis AX200a near the optical network 201 is provided with a system for setting X 0Y 0Z 0 coordinates, as in the first embodiment. That is, a direction in which the optical axis AX200a along the traveling direction of the exposure light rays is set to the + Z0 axis downwards, and a direction to the right in the horizontal direction on the paper in FIG. 6 is set to the + X0 axis, in the drawing in FIG. 6 Front-facing direction + γ-axis direction. At this time, the X0Υ0Z0 coordinate system is the right-hand rule. In this way, for the crystal lens 204, the above-mentioned angles θ j, pj, and 0 j are calculated using the X0Χ0Z0 coordinate system as a reference, and those values are substituted into equations (1) to (6) to calculate the evaluation amounts Rj and Sj. . --- Secondly, after the imaging beam is reflected by the plane mirror 203a, the direction of the beam is to the right as shown in the figure, so the X1Y1Z1 coordinate system is set with the direction of the beam as the + Z 1 axis. At this time, the χΐγ1Z1 coordinate system is transformed into a left-handed coordinate system (hereinafter, referred to as a "left-handed system") by the reflection of the plane mirror 203a. That is, the right of the optical axis AX200b along the direction of the exposure light is set to +2 1 ----- z2Lz__ This paper size applies the Chinese National Standard (CISiS) A4 specification (210X297 mm) --- binding
584898 A7 B7 五、發明説明( 軸之方向’以圖中向下為+ X1軸之方向,以由紙面而出之 方向為+ Y 1軸之方向。如此,對於向右透過結晶透鏡 205、206之成像光束,藉由以χ1γιζ1座標系為基準,求 出上述之角度0j、pj、0j,並將其代入式(1)·(6),可算 出計價量Rj及Sj。 但是,在此情況,X1Y1Z1座標系統為左手定則,有必要 注意圖4及圖5的角度pj及0 j的符號的採取方法。亦即, 左手定則的XIY1Z1座標系統的時候,使X軸、z軸及、χ, 軸、Ζ’軸各別與圖4及圖5—致,Υ軸及Υ,軸變成與圖4及 圖5的方向相反。因為旋轉角度pj及角度0j的定義以由X 軸往Y軸的方向的旋轉方向為正,所以在左手定則的 X1 Y 1Z 1座標系統,旋轉的正方向也變成與圖4及圖5所示 的方向相反。但是,由XI軸往Y1軸的方向的旋轉方向為 正是不變的。 接著,用凹面反射鏡220折射成像光束的話,因為光束 的行進方向為圖中向左的方向,所以以此光束的行進方向 為+ Z2軸設定X2Y2Z2座標系統。此時,X2Y2Z2座標系 統藉由凹面反射鏡220的反射作用回到右手定則。也就 是,設定以沿著曝光光線的行進方向的光軸A X 200b的向 左方向為+ Z2軸的方向,以圖中朝上方向為+χ 2軸的方 向,紙張向内方向為+ Y 2軸的方向。如此一來,對於向左 透過結晶透鏡205,206的成像光束,以X2Y2Z2座標系統作 為基準而求出上述的角度0j、pj、0j,藉由將那些值代 入式子(1)〜(6),算出評價量Rj及Sj。 -38 - 本纸張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 584898 A7 ______B7_ __ 五、發明説明(36 ) 再者’因為在結晶透鏡2〇5,2〇6,要使晶軸[〇〇 或結晶 軸[Π1],[ 011])與光束的行進方向一致,所以結晶透鏡 205,206中光束是向右行進的時候和向左行進的時候,有必 要注意各結晶軸的符號相反。也就是,光束是向右行進的 時候為[1 11 ]的結晶軸,變成當作光束是向左行進的時候 為結晶軸[-1-1-1]處理。同樣地,變成結晶軸[100]當作結 晶軸[-100],結晶軸[1-10]當作結晶軸卜11〇]處理。 最後’因為成像光束被平面反射鏡2〇31)折射之後,光束 的行進方向回到圖中向下方向,所以以該光束的行進方向 為+ Ζ3軸而設定Χ3Υ3Ζ3座標系統。此時,Χ3Υ3Ζ3座標 系統,藉由平面反射鏡2〇3b的反射作用再被變換成左手定 則。也就是’設定沿著曝光光線的行進方向的光軸 AX200a的向下方向為+ Z3軸的方向,以圖中向右方向為 + X 3軸的方向,紙張向内方向為+ γ 3軸的方向。如此一 來,對於結晶透鏡207〜212,以X3Y3Z3座標系統為基準 求出上述的角度Θ j、p j、0 j,藉由將那些值代入式子(J ) 〜(6) ’算出評價量Rj及sj。再者,因為X3Y3Z3座標系統 為左手定則,角度pj及0 j的算出方法,與向右透過結晶 透鏡2 0 5,2 0 6的光束的時候相同。 將如此求得的各結晶透鏡的評價量Rj及Sj各別加上而可 得到的總和評價ERj及ZSj,能夠作為在反射折射型的投 影光學系統200的複折射的影響指標之事,與關於第1個實 施形態的反射型的投影光學系列1 〇〇的情況相同。此外, 由光網20 1上面的1點出發收斂於晶片2〇2上面的1點的成像 -39 - 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公袭)一 - 584898 A7 _______ B7 五、發明説明(37 ) 光束的全部的成像光線,以總和評價量Σ R』及Σ s』的一定 的值為中心的誤差例如控制在又/2或人/2〇的範圍,藉由設 定各結晶透鏡的結晶軸,旋轉角度p』,全部透鏡的厚,曲 率半徑’間隔等等,能夠實現將複折射的不良影響抑制至 極小的光學系統之事,也與關於第1個實施形態的反射型 的投影光學系列1 00的情況相同。 再者’在關於第2個實施形態的投影光學系統200,對於 被配置在凹面反射鏡22〇的附近的結晶透鏡2〇5,2〇6在因 此’使螢石的結晶軸[11丨]與光軸AX2〇〇b—致,並且使結 晶軸[1-10]僅僅相對光軸中心60度或180度旋轉而配置。此 外’對於結晶透鏡204,207,208,209,使螢石的結晶軸[011] 與光軸AX200a—致,並且結晶軸[1〇〇]以光軸為中心各45 度分開使其相對旋轉而配置。 再者,對於結晶透鏡2 11,2 12,使螢石的結晶軸[〇〇 1 ]與 光軸AX200a —致,並且使結晶軸[丨00]的方向一致而配 置。然後,對於結晶透鏡210,使螢石的結晶軸[00丨]與光 軸AX200a —致,使結晶軸[1〇〇]的方向對於結晶透鏡 2 1 1,2 12的結晶方向僅相對光軸中心45度或13 5度旋轉而配 置。如此一來,對於由光網20 1上的1點發出收歛於晶片 202上的1點的成像光束内的全部的成像光線,變成容易設 定總和評價量XRj及SSj。 再者,在上述的第1個實施形態及第2個實施形態,為 了將本發明的說明簡略化,僅著眼著對於由光網1 〇 1 (2〇 1) 上的1點發出的成像光束。但是,為了取得好的成像性 -40- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) " — " 584898584898 A7 B7 V. Description of the invention (The direction of the axis is the direction of + X1 axis downwards in the figure, and the direction of + Y 1 axis from the paper surface. Thus, for the right through the crystal lens 205, 206 The imaging beam can be calculated using the χ1γιζ1 coordinate system as the reference, and the angles 0j, pj, and 0j can be obtained and substituted into equations (1) and (6) to calculate the pricing amounts Rj and Sj. However, in this case The X1Y1Z1 coordinate system is a left-handed rule. It is necessary to pay attention to the method of taking the signs of the angles pj and 0 j in Figure 4 and Figure 5. That is, when using the left-handed rule of the XIY1Z1 coordinate system, the X axis, z axis, and The axis and the Z ′ axis are respectively the same as those in FIG. 4 and FIG. 5, the Υ axis and 轴, the axis becomes opposite to the direction of FIG. 4 and FIG. 5. Because the rotation angle pj and the angle 0j are defined from the X axis to the Y axis The direction of rotation is positive, so in the X1 Y 1Z 1 coordinate system of the left-hand rule, the positive direction of rotation also becomes opposite to that shown in Figure 4 and Figure 5. However, the direction of rotation from the XI axis to the Y1 axis Is exactly the same. Then, if the imaging beam is refracted by the concave mirror 220, because the beam The traveling direction of is the leftward direction in the figure, so set the X2Y2Z2 coordinate system with the traveling direction of the beam as + Z2 axis. At this time, the X2Y2Z2 coordinate system returns to the right-hand rule by the reflection of the concave mirror 220. That is, Set the leftward direction of the optical axis AX 200b along the traveling direction of the exposure light to the + Z2 axis direction, the upward direction in the figure to the + χ 2 axis direction, and the paper inward direction to the + Y 2 axis direction In this way, for the imaging beams that pass through the crystal lenses 205 and 206 to the left, using the X2Y2Z2 coordinate system as a reference, the above-mentioned angles 0j, pj, and 0j are obtained, and those values are substituted into equations (1) to (6), Calculate the evaluation values Rj and Sj. -38-This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 584898 A7 ______B7_ __ 5. Description of the invention (36) Furthermore, 'Because of the crystal lens 2〇 5, 206, to make the crystal axis [〇〇 or crystal axis [Π1], [011]) consistent with the direction of travel of the beam, so in the crystal lens 205,206 when the beam is traveling to the right and to the left, It is necessary to note that the sign of each crystal axis is opposite. That is, when the light beam is traveling to the right, the crystal axis is [1 11], and when it is leftward, it is treated as the crystal axis [-1-1-1]. Similarly, the crystal axis [100] is treated as the crystal axis [-100], and the crystal axis [1-10] is treated as the crystal axis [110]. Finally, because the imaging beam is refracted by the plane mirror 2031), the traveling direction of the beam returns to the downward direction in the figure, so the X3Υ3Z3 coordinate system is set with the traveling direction of the beam as the + Z3 axis. At this time, the X3Υ3Z3 coordinate system is transformed into the left-hand rule by the reflection effect of the plane mirror 20b. That is, 'the downward direction of the optical axis AX200a along the traveling direction of the exposure light is + Z3 axis direction, the right direction in the figure is + X 3 axis direction, and the paper inward direction is + γ 3 axis direction. In this way, for the crystal lenses 207 to 212, the angles θ j, pj, and 0 j are calculated based on the X3Y3Z3 coordinate system, and those values are substituted into equations (J) to (6) 'to calculate the evaluation amount Rj. And sj. Furthermore, because the X3Y3Z3 coordinate system is a left-handed rule, the angles pj and 0 j are calculated in the same way as when transmitting the light beams of the crystal lenses 20.5, 20.6 to the right. The total evaluation ERj and ZSj obtained by adding the evaluation amounts Rj and Sj of the respective crystal lenses obtained in this way can be used as an index of the influence of the birefringence in the reflection-refraction type projection optical system 200. The same applies to the reflective projection optical series 100 of the first embodiment. In addition, starting from the 1 point on the optical network 20 1 and converging to the 1 point on the wafer 2 02 -39-This paper size applies the Chinese National Standard (CNS) A4 specification (210X 297 public attack)-584898 A7 _______ B7 V. Description of the Invention (37) All the imaging rays of the light beam are centered on a certain value of the total evaluation quantities Σ R ″ and Σ s ″, for example, the error is controlled in the range of / 2 or person / 2. Setting the crystal axis of each crystal lens, the rotation angle p ", the thickness of all lenses, the radius of curvature, and the" interval, "etc., can achieve the effect of suppressing the adverse effects of birefringence to an extremely small optical system. It is also related to the first embodiment. The same is true for the reflective projection optical series 100. Furthermore, in the projection optical system 200 according to the second embodiment, the crystal lens 205 and 206 arranged near the concave reflecting mirror 220 is set to "make the crystal axis of fluorite [11 丨] It is aligned with the optical axis AX200b, and the crystal axis [1-10] is arranged to rotate only 60 degrees or 180 degrees with respect to the center of the optical axis. In addition, for the crystal lenses 204, 207, 208, and 209, the crystal axis [011] of the fluorite is aligned with the optical axis AX200a, and the crystal axis [100] is arranged at 45 degrees apart from the optical axis as a center and is relatively rotated. The crystal lenses 2 11, 2 12 are arranged so that the crystal axis [00 1] of fluorite is aligned with the optical axis AX200a, and the directions of the crystal axis [丨 00] are aligned. Then, for the crystal lens 210, the crystal axis [00 丨] of fluorite and the optical axis AX200a are aligned so that the direction of the crystal axis [100] is only relative to the optical axis of the crystal lens 2 1 1, 2 12 The center is rotated by 45 degrees or 135 degrees. In this way, it becomes easy to set the total evaluation amounts XRj and SSj for all imaging rays emitted from one point on the optical network 201 and converged to one point on the wafer 202. Furthermore, in the above-mentioned first and second embodiments, in order to simplify the description of the present invention, only the imaging beam emitted from one point on the optical network 1 〇1 (201) is focused on. . However, in order to obtain good image formation, -40- this paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) " — " 584898
能,對於由光網101(201)上的有效照明區内的全體之點到 達晶片102(202)上的有效曝光區内的成像光束,當然應該 滿足本發明的上述關係。 此外,在上逑的各實施形態,作為複折射性的光學材料 雖然使用氟化鈣結晶(螢石),但是並不被限定為此,也能 用其它的一軸性結晶,例如氟化鋇結晶(BaF2),氟化鋰結 晶(LiF),氟化鈉結晶(NaF),氟化鳃結晶,氟化鈹 結晶(BeFO等對紫外線透明的其它的結晶材料。這裡面, 氟化鋇結晶,超過直徑200 mm大的結晶材料也已經在被 開發,有希望作為透鏡材料。此時,理想的是氟化鋇 (B a F J等的結晶軸方位也是按照本發明來決定。 再者,在上述的各實施形態,雖然本發明適用於投影光 學系統,但是並不被限定為此,為了投影檢查光學系統的 光學系統,例如本發明也能夠適用於象差測量用途光學系 、’先此外,藉由適用本發明的光學系統的類型,與如上述 實施形態從物體表面到像表面形成像的光學系統不同,從 物體表面到瞳孔面的光學系統,也有成為將平行光束往像 面水光的光學系統的構成的情況。此時,雖然如上述實施 形怨由光網1〇1(2〇1)上的1點到晶片1〇2(2〇2)上的1點的成 像光束不可能存在,但是,藉由以該成像光束為從物體表 面上面的1點到瞳孔面的成像光束,或往像面的1點聚光的 成像光束補捉,很明顯的是本發明同樣能夠適用於上述的 實施形態。 在上述的各實施形態的曝光裝置,藉由照明裝置照明 -—_______ ~41 - 本紙張尺度_中國國冢標準(CNS) A4規格(210X297公袭5-- 584898 A7 B7 五、發明説明(39 ) (照明工程)光網(掩模),藉由將使用投影光學系統於掩模 所形成過的謄寫用的圖案曝光(曝光工序)於感光性基板, 能夠製造微裝置(半導體元件,撮像元件,液晶顯示元 件,薄膜磁頭等)。以下,藉由使用各實施形態的曝光裝 置作為感光性基板的晶片等形成一定的電路圖案,對於得 到作為微裝置的半導體元件時候的手法的一例,參照圖7 的流程圖說明。 首先,在圖7的步驟301 ,在丨批的晶片上面金屬膜被蒸 發。在下一個步驟302 ,在其1批的晶片上的金屬膜上面塗 抹光敏抗蝕劑。之後,在步驟3〇3 ,使用各實施形態的曝 光裝置,掩模上的圖案之像通過其投影光學系統,順序地 被曝光謄寫於其1批的晶片上的各注射區域。之後,在步 騍304,其1批的晶片上的光敏抗蝕劑顯影之後,在步驟 305,藉由在其丨批的晶片上以抗蝕劑圖案為掩模進行蝕 刻,對應於掩模上的電路圖案被形成在各晶片上的各注射 區域。 足後,藉由進行更上層的電路圖案的形成等,半導體元 件等的元件被製造。如果根據上述的半導體元件製造方 法,能夠得到高處理能力具有極為微細的電路圖案的半導 體元件。再者,雖然在步驟3〇1〜步驟3〇5,於晶片上蒸發 金屬在其金屬膜上面塗抹光敏抗蚀劑,然後進行曝光, 顯影’_法的各工彳’但是在這些的工程之前,在晶片 上形成矽的氧化膜後,於其矽的氧化膜上塗抹抗蝕劑,然 後進行曝光,顯影,蝕刻法等的各工序也可以乃無庸置Yes, for the imaging beam from the entire point in the effective illumination area on the optical network 101 (201) to the effective exposure area on the wafer 102 (202), of course, the above-mentioned relationship of the present invention should be satisfied. In addition, in each of the above embodiments, although calcium fluoride crystal (fluorite) is used as the birefringent optical material, it is not limited to this, and other uniaxial crystals such as barium fluoride crystals can also be used. (BaF2), lithium fluoride crystal (LiF), sodium fluoride crystal (NaF), fluoride gill crystal, beryllium fluoride crystal (BeFO and other crystalline materials that are transparent to ultraviolet rays. In this case, barium fluoride crystals exceed Crystal materials with a diameter of 200 mm have also been developed and are promising as lens materials. At this time, it is desirable that the orientation of the crystal axis of barium fluoride (B a FJ, etc.) is also determined according to the present invention. Furthermore, in the above-mentioned Although the present invention is applicable to a projection optical system in each embodiment, the present invention is not limited to this. For the purpose of projecting an inspection optical system, for example, the present invention can also be applied to an optical system for aberration measurement. The type of the optical system to which the present invention is applied is different from the optical system that forms an image from the object surface to the image surface as described in the above embodiment. The optical system from the object surface to the pupil surface also has an effective The structure of an optical system that directs a parallel beam toward the image plane. At this time, although the implementation is as described above, the point from the 1 point on the optical network 101 (2101) to the wafer 102 (202) The imaging beam at 1 point cannot exist, but by using this imaging beam as the imaging beam from the 1 point on the surface of the object to the pupil surface, or the imaging beam condensed at 1 point on the image plane, It is obvious that the present invention can also be applied to the above-mentioned embodiments. The exposure apparatus of each of the above-mentioned embodiments is illuminated by an illuminating device -_______ ~ 41-This paper standard _ China National Tomb Standard (CNS) A4 Specification (210X297 Public Attack 5-- 584898 A7 B7 V. Description of the Invention (39) (Lighting Engineering) Optical Screen (Mask), by exposing (copying process) the pattern used for engraving formed on the mask using a projection optical system to Photosensitive substrates can be used to manufacture microdevices (semiconductor elements, imaging elements, liquid crystal display elements, thin-film magnetic heads, etc.) In the following, a certain circuit pattern is formed by using the exposure device of each embodiment as a wafer of a photosensitive substrate. An example of a method for a semiconductor device of a microdevice is described with reference to the flowchart of FIG. 7. First, in step 301 of FIG. 7, the metal film is evaporated on the wafer of the batch. In the next step 302, in one batch of A photoresist is applied on the metal film on the wafer. Then, in step 303, the exposure device of each embodiment is used, and the images of the pattern on the mask are sequentially exposed through the projection optical system and transcribed in one batch. Each injection area on the wafer. Then, in step 304, the photoresist on one batch of wafers is developed, and then in step 305, the resist pattern is used as a mask on the wafers of the batch. Etching is performed, and the injection patterns corresponding to the circuit pattern on the mask are formed on each wafer. After that, elements such as a semiconductor element are manufactured by forming a circuit pattern at a higher level or the like. According to the above-mentioned method for manufacturing a semiconductor device, a semiconductor device having a high processing capability and an extremely fine circuit pattern can be obtained. In addition, although in step 301 to step 305, the metal is evaporated on the wafer, the photoresist is applied on the metal film, and then exposed to develop each process of the method, but before these processes After the silicon oxide film is formed on the wafer, a resist is applied on the silicon oxide film, and then each step such as exposure, development, and etching can be performed.
584898 A7 ____B7 _ 五、發明説明(4Q~) — 疑。 此外,在各實施形態的曝光裝置,藉由於平板(玻璃基 板)上形成一定的圖案(電路圖案,電極圖案等),能夠得到 作為微裝置的液晶顯示元件。以下,參照圖8的流程圖, 對於此時的手法中的一例說明。在圖8,圖案形成工序 40 1,使用各實施形態的曝光裝置將掩模的圖案謄窝曝光 於感光性基板(抗姓劑被塗抹的玻璃基板等),實行所謂光 平版工序。藉由此光平版工序,形成於感光性基板上含多 數的電極的一定圖案。之後,被曝光的基板,藉由經過顯 影工序,蝕刻法工序,光網剥離工序等的各工序,形成基 板上一定的圖案,轉往下一個的彩色濾光器形成工序 402 〇 其次,在彩色濾光器形成工序402,已對應於R(Red), G(Green),B(Blue)的3個點的組為矩陣狀地多數被排列, 此外將R,G,B的3個條紋的濾光器之組於複數水平掃描 線方向被排列,然後,在彩色濾光器形成工序402之後, 實行元件裝配工程403。在元件裝配工序403,具有以圖案 形成工序40 1所得到的一定圖案的基板,及使用以彩色濾 光器形成工序所得到的彩色濾光器等組裝液晶面板(液晶 元件)。在元件裝配工序403,·例如,在具有以圖案形成工 序401所得到一定圖案的基板及以彩色濾光器形成工序4〇2 所仔到彩色〉慮光器之間注入液晶,製造液晶液晶面板(液 晶元件)。 之後,在模組裝配工程404,安裝使被組裝的液晶面板 ____-43-___ 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 584898 A7 B7 五、發明説明( (液晶元件)的顯示動作的電子電路’背光等的各部分作為 液晶顯示元件然後完成。如果根據上述的液晶顯示元件的 製造方法,能夠得到高處理能力具有極為微細的電路圖案 的液晶顯示元件。 再者,在上述的各實施形態,雖然對於被裝載在曝光裝 置的投影光學系統適用本發明,但是並不被限定於此,對 於其它的一般的光學系統也能適用本發明。此外,雖然在 上述的各實施形態,使用提供193 nm的波長光線的ArF準 刀子雷射光源、及提供157 nm的波長光線的ρ2雷射光源, 但是並不被限定於此,例如也能夠使用提供126 nm的波長 光線的A r雷射光源等。 如以上所說明的,在本發明,例如即使使用像螢石的複 折射性的結晶材料,也能實現具有實際上不受複折射的影 響而良好的光學性能會光學系統。因此,藉由將本發明的 光學系統編入曝光裝置,及藉由經過高解像度的投影光學 系統的高精度曝光投影,能夠製造良好的微裝置。 里^之簡要說明 圖1係大略地表示關於備有本發明的各實施形態的投影 光學系統的曝光裝置的構成$圖。 圖2係大略地表示關於本發明的第1個實施形態的投影光 學系統的構成之圖。 圖3係說明在如螢石的立方晶系的結晶的結晶軸的名稱 等等之圖。 —. _ -44 - 本紙張尺度適用ϋ家標準(CNS) A4規格(210X297公发)~~584898 A7 ____B7 _ V. Description of the invention (4Q ~) — doubt. In addition, in the exposure apparatus of each embodiment, by forming a fixed pattern (circuit pattern, electrode pattern, etc.) on a flat plate (glass substrate), a liquid crystal display element can be obtained as a microdevice. Hereinafter, an example of the method at this time will be described with reference to the flowchart of FIG. 8. In Fig. 8, the pattern forming step 401 uses the exposure apparatus of each embodiment to expose the patterned cavities of the mask to a photosensitive substrate (such as a glass substrate to which an anti-name agent is applied), and performs a so-called photolithography step. Through this photolithography process, a fixed pattern including a large number of electrodes on a photosensitive substrate is formed. After that, the exposed substrate is subjected to various processes such as a development process, an etching process process, and an optical screen peeling process to form a fixed pattern on the substrate. Then, the process proceeds to the next color filter formation process 402. Next, in color In the filter forming step 402, a group of three points corresponding to R (Red), G (Green), and B (Blue) is arranged in a matrix, and the three stripes of R, G, and B are arranged. The filter groups are arranged in the direction of a plurality of horizontal scanning lines, and then, after the color filter forming step 402, a component assembly process 403 is performed. In the element mounting step 403, a liquid crystal panel (liquid crystal element) is assembled using a substrate having a predetermined pattern obtained in the pattern forming step 401, and a color filter obtained in the color filter forming step. In the element assembling step 403, for example, liquid crystal is injected between a substrate having a certain pattern obtained in the pattern forming step 401 and the color filter forming step 402 to the color> light filter to manufacture a liquid crystal liquid crystal panel. (Liquid crystal element). After that, in the module assembly project 404, install the assembled LCD panel ____- 43 -___ This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 584898 A7 B7 V. Description of the invention (( The liquid crystal display element is used as a liquid crystal display element for display circuits such as backlights. If the above-mentioned liquid crystal display element manufacturing method is used, a liquid crystal display element with high processing capacity and extremely fine circuit patterns can be obtained. In the above embodiments, the present invention is applied to a projection optical system mounted on an exposure device, but the present invention is not limited to this, and the present invention can also be applied to other general optical systems. Each embodiment uses an ArF quasi-knife laser light source that provides light with a wavelength of 193 nm and a ρ2 laser light source that provides light with a wavelength of 157 nm, but is not limited to this. For example, a wavelength of 126 nm can be used. Ar laser light source of light, etc. As explained above, in the present invention, for example, even if the birefringence of fluorite is used Crystal materials can also achieve optical systems with good optical performance that are virtually unaffected by birefringence. Therefore, by incorporating the optical system of the present invention into an exposure device, and by using a high-resolution projection optical system, Accurate exposure projection can produce a good microdevice. Brief description of FIG. 1 is a diagram schematically showing a configuration of an exposure apparatus equipped with a projection optical system according to each embodiment of the present invention. FIG. 2 is a diagram roughly showing The structure of the projection optical system according to the first embodiment of the present invention. Fig. 3 is a diagram illustrating the names of the crystal axes of crystals such as cubic crystals of fluorite, etc. — — _ -44-Paper size Applicable to family standard (CNS) A4 specification (210X297)
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584898 A7 B7 五、發明説明(42 圖4(a)〜(c)係說明以結晶透鏡的光軸為中心的旋轉角 度的定義之圖。 圖5係說明結晶透鏡Gj的成像光線與z軸方向所成的角度 Θ及與X軸方向所成的角度0的定義之圖。 圖6係表示關於本發明的第2個實施形態的投影光學系統 的構成之圖® ' 圖7係得到作為微裝置的導體元件之時的手法的流程 圖。 圖8係仔到作為微裝置的液晶顯示元件之時的 程圖。 子法的流 符號的說明 1光源 2送光系統 3照明光學系統 5光網載物台 8晶片載物台 6,9箱子 10定位顯微鏡 100,200,300投影光學系統 101,201 光網 102,202 晶片 103〜110結晶透鏡 203反射鏡區 2 2 0凹面反射鏡 204〜212結晶透鏡584898 A7 B7 V. Explanation of the invention (42 Figures 4 (a) ~ (c) are diagrams explaining the definition of the rotation angle centered on the optical axis of the crystal lens. Figure 5 illustrates the imaging light and the z-axis direction of the crystal lens Gj Definition of the angle Θ and the angle 0 with respect to the X-axis direction. Fig. 6 is a diagram showing a configuration of a projection optical system according to a second embodiment of the present invention® 'Fig. 7 is obtained as a microdevice Flow chart of the method of the conductive element at the time. Figure 8 is a time chart from the time of the liquid crystal display element as a micro device. Explanation of the flow symbols of the sub method 1 light source 2 light transmission system 3 lighting optical system 5 optical network Stage 8 Wafer Stage 6, 9 Boxes 10 Positioning Microscope 100, 200, 300 Projection Optical System 101, 201 Optical Network 102, 202 Wafer 103 ~ 110 Crystal Lens 203 Mirror Area 2 2 0 Concave Mirror 204 ~ 212 Crystal Lens
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US7453641B2 (en) | 2001-10-30 | 2008-11-18 | Asml Netherlands B.V. | Structures and methods for reducing aberration in optical systems |
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