TW200844677A - Image forming optical system, exposure equipment and device manufacturing method - Google Patents

Abstract

It is an object to provide an image forming optical system that has an effective image forming region with a shape suitable for a collective type exposure device, for example, and that is a reflective refracting type with a small absolute value of an image forming magnification and a high numerical aperture. The image forming optical system forms an image of a first surface (R) on a second surface (W) and is provided with a first image forming system (G1) disposed between the first surface and a first conjugate position optically conjugate with the first surface, a second image forming system (G2) disposed between a second conjugate position optically conjugate with the first conjugate position and the first conjugate position, and a third image forming system (G3) disposed between the second conjugate position and the second surface.; If the image forming magnifications of the first, second and third image forming systems are M1, M2 and M3, respectively, the following conditions are satisfied: 0.8 < |M1| < 2, 0.8 < |M2| < 2 and 0.03 < |M3| < 0.2.

Description

200844677 IX. The invention relates to an imaging optical system, an exposure apparatus, and a component manufacturing method, and more particularly to a component for manufacturing a semiconductor element or a liquid crystal display element by a photolithography process. A projection optical system to which the exposure apparatus used is applied. [Prior Art] In the photolithography process for manufacturing a semiconductor element or the like, a pattern image of a photomask (or a reticle) is projected and exposed to a photosensitive substrate through a projection optical system (a wafer or a glass plate coated with a photoresist) Etc. on the exposure device. In the exposure apparatus, as the degree of integration of semiconductor elements and the like is increased, the resolution (resolution) required for the projection optical system is also increasing. In order to satisfy the requirements for the resolution of the projection optical system, it is necessary to shorten the wavelength of the illumination light (exposure light) and increase the image side numerical aperture να of the projection optical system. Therefore, a liquid immersion technique is known in which an optical path between a projection optical system and a photosensitive substrate is filled with a liquid having a high refractive index to increase the image side numerical aperture. In general, a projection optical system having a large numerical aperture on the image side is not limited to a liquid immersion system, and even a drying system is preferable from the viewpoint of establishing a Petzval condition to obtain flatness of an image. In the reflection-refractive type imaging optical system, from the viewpoint of the stress on various fine patterns, an imaging optical system of an off-axis type having an effective field of view (or an effective imaging area) excluding an optical axis is preferably used. Conventionally, various types of refraction type imaging light suitable for the off-axis field type of the exposure apparatus of the 200844677 have been disclosed. In the exposure apparatus, as the semiconductor circuit is miniaturized, the semi-pattern is continuously refined. However, the mask pattern is fine. The resulting increase in the size of the reticle ^, ^, the use of a small number of small-scale production of a large number of semiconductors produced by a large number of masks, also led to an increase in the cost of the wafer. Therefore, in order to achieve semiconductor circuit without the reticle pattern miniaturization In order to reduce the absolute value of the projection magnification (imaging magnification) of the photographic optical system, it is considered to be small. However, while the reticle and the photosensitive substrate are moved relative to the projection optical system, the pattern is scanned and exposed to one irradiation region. In the scanning type exposure apparatus, when the absolute value of the magnification of the shadow optical system is set small, the speed reduction of the mask holder for scanning the mask cannot be avoided. A single-type exposure apparatus in which one cover image is exposed to one illumination area on a photosensitive substrate at a time, even if the projection optical system is cast The absolute value of the image magnification is set to be small, and the yield can be prevented from being lowered. However, the conventional off-axis field-type reflection-optical imaging optical system disclosed in Patent Document 1 and the like is reflected by the mirror. The optical path of the light is separated from the optical path of the light incident on the mirror. Therefore, only a relatively thin rectangular or arc-shaped effective imaging area (effective projection area) can be ensured, and even if it is suitable for a scanning type exposure apparatus, it is actually not easy. It is suitable for a primary exposure apparatus. The present invention has been made in view of the above problems, and an object thereof is to provide an effective imaging area having a shape suitable for a primary exposure apparatus, for example, and an absolute value of the magnification of the image is small. The present invention aims to provide a refraction that can be used with an effective imaging area having a shape suitable for a primary exposure apparatus and having a high numerical aperture with a small absolute value of imaging magnification. The type of imaging optical system enables u, and 'field patterns to be exposed to the exposure device with high precision and high yield. / : In the imaging optical system according to the first aspect of the present invention, the image of the first surface is formed in the second ®, and the ith imaging system is disposed in the optical conjugate with the third surface. i conjugate position... between the first surface of the first 成像2 imaging system, is disposed between the second common vehicle position and the first common vehicle position of the first common vehicle position f optical; and The ium system is disposed between the second total Lie position and the second surface; the imaging magnification of the first imaging system is M1, the imaging magnification of the second imaging system is M2, and the imaging of the third imaging system is performed. When the magnification is M3, the following conditions are satisfied: 0.8 &lt; |M1| &lt; 2 0.8&lt;|M2|&lt; 2 〇·〇3<丨Μ3|&lt; 〇·2. The exposure apparatus of the second aspect of the present invention Further, the image is projected onto the first form of the photosensitive substrate set on the f 2 surface, based on the pattern from the first surface set on the first surface of the first surface. The imaging optical system according to a third aspect of the present invention, comprising: an exposure step of using the exposure apparatus of the second aspect; The pattern is exposed to 8 200844677, and the photosensitive substrate is subjected to the exposure step; and the developing step is performed on the photosensitive substrate. According to the present invention, the imaging optical system of the catadioptric reflection type of the three-dimensional image is used to make the imaging magnification of the refractive second imaging system, the imaging magnification of the second imaging system of the preparation surface, and the third of the folding (four). (4) The imaging magnification of the system is full; 1 the conditional formula of the desire. As a result, even if the absolute value of the imaging magnification of the imaging optical system as a whole is set small, for example, the degree of sputum,

It is also possible to ensure an effective imaging area of a large and nearly square rectangle (i.e., suitable for the shape of the _-type exposure apparatus). The present invention is, for example, a reflection-refractive type imaging optical system having an effective imaging area suitable for the shape of a primary exposure apparatus and having a high numerical value of an aperture value which is small in absolute value. Further, in the exposure apparatus of the present invention, it is possible to use a reflection-refractive type imaging light having an effective imaging area suitable for the shape of the -type exposure apparatus and having a high numerical aperture of an absolute magnification of the imaging magnification: the system 'make the fine pattern High-precision and high-yield projection exposure, or good components can be fabricated with 13⁄4 precision and 咼 yield. [Embodiment] The imaging optical system of the present invention includes a refractive ith imaging system that forms a first intermediate image based on light from a first surface (object surface), and includes a reflecting surface and light formation from the first intermediate image. The second imaging system of the intermediate image and the refraction type third imaging system in which the final image is formed on the second surface (image surface) based on the light from the second intermediate image. That is, the imaging optical system of the present invention is a three-order imaging type catadioptric imaging optical system. 9 200844677 The following conditional formulas, (3), are respectively satisfied. 〇.8&lt;|M1|&lt; 2 0) 〇.8&lt;|M2|&lt; 2 (2) 0.03 &lt;|M31&lt; 0.2 (3) When the upper limit value of the conditional expression (1) is exceeded, the present invention The cathodic reflection type imaging optical system of the third-order imaging type having the above basic configuration is the first! The imaging magnification m of the imaging system, the imaging magnification M2 of the second imaging system, and the imaging magnification of the third imaging system (10) are respectively under the limit of Budedu 1, absolute value | M1| is too large, and is in the second virtual , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , ^ H is not easy to correct the distortion aberration, and it is not easy to correct the spherical aberration of the aperture. In order to more effectively perform the present effect, it is preferable to set the upper limit value of the conditional expression (1) to 17. The lower limit of the formula (1), the imaging magnification of the first imaging image, the value of the bar 丨Μ1丨 is too small, the wealth from the beam passing through the first image is large, and the first in the formation of the system is ^1 ^ Jl+ ^ ΑΑ It is difficult to separate the light from the mirror of the imaging system. In other words, the image of the light becomes large and large, and it is difficult to correct the U aberration correction #^ 〇 ^ 〜, the form aberration, the astigmatism, and the distortion image search. In addition, in order to play the image more effectively, the lower limit of the conditional expression (1) is set to G9. ', the father is good' will exceed the absolute value of the conditional (2) upper limit | Μ 2ί too large, ^ 2 ^ imaging system imaging magnification 2nd reflection imaging system to the second light into the brother 2 reflection The money that the mirror person shoots is too high. The i-inch becomes larger, or it is not easy to manufacture optical systems. Another fruit, the mirror with the same size, first, first. Moreover, it is not easy to correct the distortion aberration, 200844677 and it is not easy to correct the spherical aberration of the pupil. Further, in order to achieve the effect of the invention, it is preferable to set the upper limit value of the condition (2) to 17 in the condition of the liver. When the lower limit value of the conditional expression (2) is not reached, the absolute value of the imaging magnification of the first music imaging system is too small, from the second through the formation of the first half of the imaging system.

The NA of the beam of the image becomes larger, and the light of the second mirror of the 2nd shot, the T^, and the 2nd image of the 2nd shot is separated by U m. As a result, the aberration must be corrected. The image becomes taller and bigger, and it is not easy to correct 彗&quot; Bu Dou U positive coma aberration, astigmatism, 歪

Aberration, etc. Further, in order to more effectively exert the effects of the present invention, it is preferable to set the lower limit value of the conditional expression (2) to ο;. In the imaging optical system of the present invention which satisfies the conditional expressions (1) and (2), in order to obtain a desired reduction ratio (for example, the imaging magnification of the entire imaging optical system, the value of the bar value of /5 - 1 / 8), the third The absolute value of the imaging magnification of the imaging system must satisfy the conditional expression (3). Absolute value of imaging magnification of the third imaging system | M3| When the conditional expression (3) is not satisfied, the absolute value of the imaging rate of the i-th imaging system _ and the absolute value of the imaging magnification of the 帛2 imaging system 丨 (10) 丨The defect in the above-described aberration correction is generated within the range of the conditional expression (1) and the conditional expression (2). Further, in order to more effectively exhibit the effects of the present invention, it is preferable to set the upper limit value of the conditional expression (3) to 〇.16 and the lower limit value to 〇.〇4. Therefore, in the cathodic reflection type imaging optical system of the third-order imaging type having the above-described basic configuration of the present invention, even if the absolute value of the imaging magnification of the entire imaging optical system is not set to be as small as the example #1/8, it is ensured. An effective imaging area of a larger and nearly square rectangle (i.e., suitable for the shape of a one-shot exposure apparatus). That is, in the present invention, for example, an antireflection type imaging optical system having an effective imaging area suitable for the shape of a one-person type exposure apparatus and having an imaging magnification of a high numerical aperture of a large numerical aperture can be realized.

Further, the exposure apparatus of the present invention can use a reflection-refractive type imaging optical system having an effective imaging area suitable for the shape of the primary exposure apparatus and having a high numerical value of the imaging magnification, so that the fine pattern is highly precise. And high yield projection exposure. Further, in the image forming optical system of the present invention, it is preferable that the optical path between the image surface and the image surface can be filled with a liquid. Thus, by using the liquid immersion type optical system in which the liquid immersion area is formed on the image side, it is possible to secure a large practical image side numerical aperture and to secure a large effective imaging area. Embodiments of the present invention will be described with reference to the drawings. Item 1 is a view schematically showing the configuration of an exposure apparatus according to an embodiment of the present invention. In the figure, the X-axis and the y-axis are set to be parallel to the wafer w, and the z-axis is set to be orthogonal to the wafer w. More specifically, the '胄χγ plane is set to be parallel to the horizontal plane, and the +Ζ axis is set to face upward in the vertical direction. As shown in Fig. 1, the exposure apparatus of this embodiment is provided with illumination light a 照明 illumination optical system! A molecular laser source comprising, for example, an exposure source, consisting of an optical integrator (equalizer), a field of view aperture, a polyscope, and a mirror. The exposure light (exposure beam) IL, which is emitted from the light source by the (four) 193 nm ultraviolet pulse light phase, passes through the illumination optical system i to illuminate the target (mask) R. A pattern to be transferred is formed on the reticle, and a rectangular pattern region having a long side in the x^ direction and a short side along the 丫 direction is illuminated. Through the light of the reticle R, the selective reading, the two imaging lights, the image-type reflection-refraction type, the first liquid-immersed projection optical system, and the coating on the coated substrate (photosensitive substrate) w. The rate _ the shot area is reduced by a predetermined pattern. That is, a pattern image is formed on the wafer W by a rectangular exposure region having a long side along the χ direction and a short side along the Y direction, optically corresponding to the illumination region of the moment 12 200844677 on the reticle R . Fig. 2 is a view showing the positional relationship between the rectangular exposure region formed on the wafer and the optical axis in the embodiment. As shown in Fig. 2, in the circular region (image circle) IF having a radius B centered on the optical axis AX, the position is set at a position away from the axial axis y in the Y direction. A rectangular exposure area ER of a desired size. The exposure area has a length of LX, and the length of the Y direction is LY. Although not shown in the figure, on the reticle R, a rectangle having a size and shape corresponding to the exposure area er I is formed at a position away from the corresponding axis deviation amount A from the optical axis eight in the 丫 direction corresponding to the rectangular exposure area ER. Lighting area. The reticle R is held parallel to the plane on the reticle stage RST, and the reticle stage RST is loaded with a mechanism for causing the reticle R to be slightly moved in the χ direction, the γ direction, and the rotation direction. The reticle-loaded table coffee is instantaneously measured by a reticle laser interferometer (not shown) and controls the position of the χ direction, the γ direction, and the rotational direction. The crystal K w is transmitted through the crystal holder (not shown on the Z stage 9 to be parallel to the χ γ plane. The stage 9 ′ is fixed to move along the XY plane parallel to the projection optical system. On the χγ stage iq, the focus position of W (the position in the Z direction) and the tilt angle. Z 奸 使用 使用 使用 使用 使用 使用 使用 使用 使用 使用 使用 使用 使用 使用 即时 即时 即时 即时 即时 即时 即时 即时 即时 即时 即时 即时 即时 即时 即时 即时 即时 即时 即时 即时 即时 即时 即时The position of the vx direction and the direction of rotation. The XY stage 10 is mounted on the susceptor u Y direction and the direction of rotation. ""X direction of the sleepy W, 13 200844677. In addition, the exposure apparatus of the present embodiment is provided. The main control system (4) adjusts the position of the X direction, the γ direction, and the rotation direction of the line R according to the measured value measured by the reticle laser interferometer. The main control system 14 transmits the control signal to The mechanism for loading the reticle on the enamel 'move the reticle stage RST to move the reticle (4) position adjustment. Also 'main control system % 14, in order to auto focus mode and auto leveling method ^ wafer W The upper surface—the image plane of the projection optical system PL, enters; _ the focus position of the circle w The position in the z direction) and the adjustment of the tilt angle. ^ That is, the main control system 14 transmits the control signal to the wafer stage drive = system 15, and the wafer stage drive system 15 drives the z stage 9 to perform the day: The focus position and the tilt angle of the circle w are adjusted. Further, the main control system μ performs the X-direction, the γ-direction, and the rotational direction of the wafer W based on the measured values measured by the wafer laser interferometer 13. That is, the main control system 14 transmits the control signal to the wafer stage driving system 15, and the wafer stage driving system 15 drives the χγ stage 1 进行 to perform the wafer 之 direction, the Υ direction, Position adjustment in the direction of rotation. During exposure, the pattern of the reticle R is exposed to a predetermined illumination area on the wafer W in one projection. Thereafter, the main control system 14 transmits the control signal to the wafer stage drive. The system 15 drives the XY stage 1〇 by the wafer stage driving system 〇 to move the other irradiation area on the wafer w to the exposure position step by step. Thus, the step line R is repeatedly used to make the reticle R The pattern is like a single exposure on the wafer w Fig. 3 is a view schematically showing the structure between the boundary of each embodiment of the present embodiment and the day and day of the circle. As shown in Fig. 3, in the present embodiment, 14 200844677 fills the boundary with liquid Lm. The optical path between the lens Lb and the wafer W. The boundary lens Lb is a positive lens whose convex surface faces the reticle R side and faces the wafer w side. As shown in Fig. 1, in the present embodiment, the water supply and drainage mechanism 21 is used. The liquid Lm is circulated in the optical path between the boundary lens Lb and the wafer W. In the present embodiment, the liquid Lm is made of pure water (deionized water) which can be easily obtained in a large amount by semiconductor manufacturing workers. The Lm continues to fill the optical path between the boundary lens _Lb of the projection optical system pL and the wafer W, and can be disclosed, for example, in the technique disclosed in International Publication No. WO99/495 04唬, or in Japanese Laid-Open Patent Publication No. Technology, etc. The technique disclosed in the International Publication No. WO 99/495〇4 is to supply a liquid adjusted to a predetermined temperature from the liquid supply device through the supply pipe and the discharge nozzle to fill the boundary lens Lb and the wafer W. The optical path recovers liquid from the wafer W from the liquid supply device through the recovery tube and the inflow nozzle. On the other hand, the technique disclosed in Japanese Laid-Open Patent Publication No. H10-303U4 is to form a wafer holder in a container shape to accommodate a liquid, and to absorb the liquid in the center of the straight portion f (in the liquid) by vacuum adsorption. Positioning and holding the wafer w. Further, the front end portion of the barrel of the projection optical system PL reaches the liquid, or the optical surface on the wafer side of the boundary lens reaches the liquid. In this way, the liquid as the immersion liquid can be circulated at a small flow rate to prevent deterioration of the liquid by the effects of corrosion prevention and antibacterial action. Further, it is possible to prevent aberration variation caused by heat absorption of exposure light. The aspherical surface of each embodiment of the present invention is set such that the height perpendicular to the optical axis is y, the tangent plane from the vertex of the aspheric surface, and the position on the aspheric surface of the height y along the optical axis. When the distance (sagittal) is z, the radius of curvature of the vertex 15 is 200844677, the conic coefficient is π, and the aspherical coefficient is 苟, it is expressed by the following formula (4). In the following Tables (1) and (7), the lens surface formed into an aspherical shape is marked with * on the right side of the surface number. (y2/r)/[l + (1 _ (1 + ^ )xy2/r2}l/2] + c^y4+ C6Xy6 + w _ ί π , Λ ι ... (a) :y C8xy8+ CI〇xy10+ C12xy12+ C14xy14+ Further, in each of the embodiments of the present embodiment, the projection optical system pL includes the first imaging system G1 for forming the second intermediate image of the reticle r-object placed on the object surface (the first surface). The second image system of the second intermediate image of the line pattern (the image of the first intermediate image, that is, one of the reticle patterns) is formed by the light from the middle image of the 漦w The second system of the final image (the reduced image of the reticle pattern) which is opened on the crystal m of the image plane (the second surface) by the light from the second intermediate image Silk p, Erchuandi 3 imaging system G3. The first imaging system, the first G1 and the third imaging system G3 are all refraction optics of the refracting image system, which are made up of opposite each other, =, ,,, (10) For the concave mirror mirror and the projection optical outside of the second embodiment, the second imaging "G2, the first reading line (1), and the straight line extending in the vertical direction are common to the system (1), The second imaging system 02 and the first axis 3: that is, the first imaging system λ L imaging system G3 is mutually jt-axis. Thus, the light transmitting member and the constituting the octagonal sheet R and the wafer w are eight-axis. 3 All the elements of the imaging system G1 are along the light transmission structure of the positive six/first G3 with the gravity direction. In each embodiment, the projection light two: (horizontal plane) are arranged parallel to each other. The square is formed to be substantially telecentric. Double on the object side and the image side 16 200844677 (first embodiment) FIG. 4 is a projection optical system showing an i-th embodiment of the present embodiment

A diagram of the lens. In the projection optical system PL of the first embodiment, the first imaging system G1 has a parallel plane plate P1, a positive lens L11 whose spherical surface faces the wafer side, and a convex surface toward the reticle from the reticle side. The positive meniscus lens L12 on the side, the positive meniscus lens l13 on the side of the reticle, the positive meniscus lens L14 on the side of the reticle, the lenticular lens 5, and the positive meniscus on the side of the reticle The lens L16, the negative meniscus lens L17 whose concave surface faces the reticle side, the lens [18 with the aspherical surface toward the wafer side, the positive meniscus lens L19 whose concave surface faces the reticle side, and the positive _ month when the concave surface faces the reticle side The surface lens L11G and the positive lens L 1 1 1 on the side of the reticle side, the imaging system G2, the second imaging system G2, along the direction of travel of the light, the concave surface of the aspherical shape from the incident side of the light toward the ith side of the incident side Concave mirror CM1, and a concave mirror with an aspherical shape facing the incident side of the second concave mirror

In other words, the second imaging system G2 is composed of one of the concave mirrors CM1 and CM2 disposed opposite to each other. The third imaging system G3, from the side of the reticle (that is, the incident side of the light), has a convex meniscus lens L31 whose convex surface faces the reticle side, and a negative meniscus L32 whose concave surface of the aspherical shape faces the wafer side. The concave shape of the aspherical shape = the double concave 豸 (3) toward the wafer side, the convex surface of the aspherical shape toward the crystal 2: the floor lens °4, the concave surface of the aspherical shape toward the reticle, the lunar lens L35, the aspherical surface The concave surface of the shape faces the reticle side positive bow lunar lens L36, the convex surface of the aspherical shape faces the reticle side 17 200844677 lenticular lens L37, and the positive meniscus lens whose concave surface faces the reticle side [Μ, , convex lens L 3 9 , The variable aperture aperture AS for changing the numerical aperture of the projection optical system p L , the plano-convex lens L3i 平面 facing the wafer side, the concave surface of the aspherical shape toward the wafer side, the positive meniscus lens L3u, the aspheric surface / ^ A positive meniscus lens L312 having a concave surface facing the wafer side and a plano-convex lens L313 (boundary boundary Lb) having a plane facing the side of the wafer. In the first embodiment, the optical path between the boundary transparent space Lb and the wafer w is filled with pure ArF excimer laser light (center wavelength i = 193.306 nm) having a light (exposure light) having a refractive index of 14358760. Water melon). All of the light-transmitting members including the boundary lens Lb are formed of quartz (Si〇2) having a refractive index of 1.5603261 in the center of the light. Table (1) below shows the values of the respective elements of the projection optical system PL of the first embodiment. In the main elements of Table (1), λ is the center wavelength of exposure light, /5 system, the magnification (absolute value) indicating the projection magnification (the imaging magnification of the entire system), and να is the image side (wafer side) numerical aperture. The β system indicates the radius (maximum image height) of the circle IF on the wafer w, the Α indicates the axial deviation of the exposure region, and the LX indicates the dimension along the χ direction (long side dimension) of the exposure region ER, The LY silk shows the size of the dimension along the γ direction of the exposed filament region ER). Further, the 'elements of the optical elements of the table (1)' face number indicates the reticle along the ray path (from the reticle plane of the object plane (the first surface) to the wafer surface of the image plane (the second surface). The surface order of the side, the r system indicates the curvature clock of each surface (the radius of curvature of the vertex when the aspherical surface is: _), the d system indicates the axis of each surface; the interval is the surface spacing—), and the n system indicates the refraction of the center wavelength. rate. In addition, 18 200844677 Table (1) is the same as Table 2 (2). Table (1) (Main elements) λ = 193.306nm, β = 1/8, NA= 1.3 ® = 17.5mm, A = 2mm, LX = 16.5mm, LY = 13mm (optical elements)

Face number rd η Optical element (line side) 30.000 1 00 8.000 1.5603261 (Ρ1) 2 00 3.000 3 281.524 44.425 1.5603261 (L11) 4氺6304.702 1.000 5 535.226 26.268 1.5603261 (L12) 6 2042.624 2.179 7 514.833 30.178 1.5603261 (L13) 8 8900.237 13.253 9 176.189 37.760 1.5603261 (L14) 10 316.462 18.609 11 820.595 21.568 1.5603261 (L15) 12 -1871.727 40.144 13 244.560 18.612 1.5603261 (L16) 14 2797.080 22.981 15 a 317.081 12.000 1.5603261 (L17) 16 -599.622 1.000 17 -4345.651 15.000 1.5603261 (L18) 19 200844677

18氺-623.618 7.705 19 -247.522 20.625 1.5603261 (L19) 20 -172.529 14.886 21 -1200.542 20.000 1.5603261 (L110) 22 -399.728 1.000 23氺-3380.520 55.000 1.5603261 (L111) 24 -168.314 44.360 25氺282.356 336.278 (CM1) 26氺 257 257 257 257 257 257 257 257 257 257 257 257 257 257 257 257 257 257 257 257 257 257 257 -294.551 39.124 35氺-687.854 12.000 1.5603261 (L35) 36 -1352.245 17.149 37* -448.801 60.392 1.5603261 (L36) 38 -178.544 27.466 39氺5491.140 40.434 1.5603261 (L37) 40 -614.606 1.000 41 -1456.883 49.774 1.5603261 (L38) 20 200844677

42 -432.005 43 1 1 80.673 44 -1052.283 45 00 46 315.965 47 00 48 186.588 49氺472.768 50 120.926 51氺341.002 52 84.288 53 00 (wafer surface) (aspherical material) 3.782 40.916 1.5603261 (L39) 5.745 5.746 (AS 61.491 1.5603261 (L310) 17.205 50.220 1.5603261 (L311) 1.000 47.947 1.5603261 (L312) 1.000 56.172 1.5603261 (L313:Lb) 3.000 1.4358760 (Lm) 4 faces • /c = 0 C4 = 1.773740xl0'8 c8 = I.672971x| 〇·17 C 12 = :2.646746X10·26 Ci6 2:7.01 lOOOxlO·36 18 faces: /c = 0 C4 = 1.797982xl0*7 Cg = -4.008106xl0'15 Ci2 = :-9·961646χ10·23 Ci6 = : -8.50824〇xl〇-31 C6= - 2.712955xl0*13 C10= - 6.556591 xi〇·22 C14= - 6.172415xl〇·31 C6= 1.045443X 10·11 C10= 6.521334xl〇·19 C14= 1.304304xl〇· 26 21 200844677 /c = - 3.401919X10·1

-1.675903X10-1

23 faces: /c = 0 C4= 2·907195χ10·8 C8= - 1.843491χ1〇·16 C12= - 7.1 13591 xl〇·25 C16= — 3.236499X10·34 25 faces: C4= - 7.668009xl〇-10 C8 = - 1.235234xl〇·20 C12= - 5.810164xl〇·30 C16= - 7.218893xl〇-40 26 face: /c = C4= 4.715829X10*10 C8= 7.059017xl〇-20 C12= 4.916326xl〇·29 C16 = 8.42217〇xl〇·39 30 face: /c = 0 C4= - 1.232920χί0*7 Cg= - 1.970289xl〇-16 C12 二一3.622728X10·25 C16= - 1.902778xl〇-33 32 face: /c = 0 C4= 1.1 1 5835xl0·7 C8= - 6.708189X 10'17 C12= - l_719883xl〇-24 C6= 5.48997〇xl〇·13 C10= 1.450339xl〇·20 C14= 2.188614x1 O'29 C6 = — 5.76825 6χ 10'15 C10= - 3.874191 X 10-26 C14 = 1 ·06078〇χ 1 0·34 C6 = 6.3 10549x 10_15 C10= - 3.235909xl〇-25 C14= — 7.266564x 1 O'34 c6=- -8.987161xl 〇·14 Ci〇=- - 7·867015χ10·21 C14 = -2.129891xl〇·29 C6= - 6.257146xl〇-12 C10= 3.414395xlO*20 C14= 8.297704X10&quot;29 22 200844677 c16 = -9.267285X10'33 34 faces: /c = 0 c4=- -2.499642xl〇-8 Cg =&quot; -4.663736X10·17 c12 = -3.4530 21X10'24 Ci6 = -2.691373xl〇-32 35 faces: /c = 0 C4=- -9.3 1 1896xl〇·8 Cg=- -3.659506xl〇·17 C12 = -6.654624xl〇-25 Ci6 = -2.449999xl 〇·33 37 faces: /c = 0 C4= 4·886924χ1〇-9 c8=- -4.517936X10'17 ^12 ~ -2.054763xl〇-27 C〗 6 = -2.142254xl〇-34 39: /c = 0 C4 = 4 .059477X10·9 c8=- -8.915583xl0*19 c12 = -2.183253xl〇·27 Ci6 = 1.435636xl〇-37 49面:/c = 0 C4 = 6 • 613743xl0_9 c8=— -3.733304xl0 *17

C6 = 5.647136χ 1 Ο'12 C10= 2.495244χ10·20 C14= 4.123744χ1〇-28 C6= 1.72197〇xl〇-12 C10= 8·942724χ10,21 C14= 6.941057xl0·29 C6= 1.026475xl〇·12 C10 = - 1.590462X10'21 C14 = 6.198944x 1 O'30 C6= - 1.381500xl0*13 C10= 1.397321 xl〇·22 C14 = 0 C6= 3.893491 xl〇-15 C10= 2.277028X10-21 23 200844677

C12= - 2.637163X10*26 C16= 2·825371χ10·35 5 1 Face: /c = 0 C4= 4.019193xl〇·8 C8= - 3.129836xl〇-16 C12= - 2.210986xl0·24 C16= — 2.558382X10· 33 (conditional corresponding value) (1) 1M1|= 1.347 (2) |M2|= 1.133 C14= - l.〇72989xl〇·30 C6= 3.323708X10·12 C10= 2.775896X10·20 C14= l_〇6401〇 Xl〇·28 (3)|M3|= 0.082

Fig. 5 is a view showing spherical aberration, field curvature, and distortion of the projection optical system of the first embodiment. Fig. 6 is a view showing the lateral aberration of the projection optical system of the second embodiment. In the aberration diagram, να represents the numerical aperture on the image side (wafer side) of the projection optical system PL, and γ represents the image height (mm). It can be clearly seen from the aberration diagrams in Figures 5 and 6, in the first! In the embodiment, although a very large image side numerical aperture (NA = 丨. 3) and a large and nearly square rectangular exposure area ER (16.5 mm x 13 mm) are ensured, sub-laser light can be applied to a wavelength of 193 3 〇 6 nm. Correctly correct various aberrations. (Second Embodiment) Fig. 7 is a view showing a lens configuration of a projection optical system of the f 2 f embodiment of the present embodiment. In Fig. 7, in the projection optical system of the f 2 embodiment, the first imaging system (1) has a parallel plane plate ρι, a concave surface of the aspherical shape toward the wafer side, and a positive meniscus lens (1) from the reticle side. Double convex 24 200844677 L12, double convex T1q ^, brother L13, lenticular lens L14, negative % of the concave surface toward the reticle side, lunar lens U5, positive meniscus with the convex surface facing the reticle side, brother 6 Positive lens L·17 with aspherical surface facing the reticle side, biconcave lens L18, positive meniscus lens with convex surface facing the reticle side, positive meniscus® with concave surface facing the reticle side; class# τ η Λ lunar lens The LI 10 and the concave surface of the aspherical shape face the meniscus lens L111 on the reticle side. The second imaging system still follows the path of light travel from the incident side of the light.

The second concave imaging mirror CM1 having a concave surface having an aspherical shape toward the incident side and the concave surface of the aspherical shape facing the incident side, the second imaging system G2, are disposed opposite to each other. Concave mirrors CM1 and CM2 are formed. The 3 imaging system and the system G3 sequentially have a positive meniscus lens (3) having a concave surface toward the reticle side and a concave lens L32 having a concave surface facing the wafer side from the reticle side (ie, the incident side of the light). The concave surface of the aspherical shape is concave... 3, the convex surface of the aspherical shape faces the wafer side from the core surface lens LK, the concave surface of the aspherical shape faces the face lens L35 on the reticle side, and the concave surface of the aspherical shape faces the reticle a positive-angle lunar lens L36 on the sheet side, a positive lens (3) on the side of the aspherical surface toward the reticle, a lenticular lens L38, a lenticular lens L39, a variable aperture aperture AS for changing the numerical aperture of the projection optical system, and a plane facing the wafer side Flat (3) 〇: the concave surface of the aspherical shape faces the positive meniscus of the wafer side ' 3 11 , the concave surface of the aspherical shape faces the positive meniscus lens L312 of the wafer side, and the plane convex lens boundary of the plane toward the wafer side The second embodiment of the permeable environment is also the same as the third embodiment. The optical path between the border and the wafer is filled with ArF excimer laser light (center wavelength Λ=193). ·3〇6ηπι) Pure water (Lm) having a refractive index of 1,435,876 Å and all of the light-transmitting members including the boundary lens Lb are formed of quartz having a refractive index of 1.56 to 3261 at the center wavelength of light. Table (2) below shows the values of the respective elements of the projection optical system p]L of the second embodiment. Table (7)

(Main elements) λ = 193.306nm, /5 = 1/8, ΝΑ = 1.3 Β = 17.5mm, A = 2mm, LX = 16.5mm, LY = 13mm (each element of the optical element) Face number rd η Optical component ( Marking surface) 30.000 1 00 8.000 1.5603261 (Ρ1) 2 00 3.000 3 354.1 18 25.000 1.5603261 (L11) 4氺482.658 21.715 5 1539.378 39.910 1.5603261 (L12) 6 -512.239 1.000 7 1224.052 30.443 1.5603261 (L13) 8 -916.651 41.382 9 1444.324 30.983 1.5603261 (L14) 10 -532.385 72.845 11 -437.737 17.818 1.5603261 (L15) 12 -300.049 1.000 26 200844677

13 172.952 19.229 1.5603261 (L16) 14 627.068 6.458 15 * 865.020 60.101 1.5603261 (L17) 16 -143.465 1.000 17 -213.025 15.000 1.5603261 (L18) 18 4814.255 4.756 19 867.139 18.000 1.5603261 (L19) 20 13 190.353 6.620 21 -448.309 26.866 1.5603261 ( L110) 22 -116.198 8.429 23 * -101.161 54.543 1.5603261 (L111) 24 -196.241 28.437 25 * 290.405 371.980 (CM1) 26氺-269.122 77.166 (CM2) 27 -771.521 20.720 1.5603261 (L31) 28 -336.553 4.021 29 -303.297 25.000 1.5603261 (L32) 30* 297.950 84.529 31 -382.946 12.000 1.5603261 (L33) 32 * 152.462 43.968 33 -606.760 17.628 1.5603261 (L34) 34氺-298.594 43.605 35氺-253.854 23.167 1.5603261 (L35) 36 -319.569 12.332 27 200844677

37 * -488.145 58.760 1.5603261 (L36) 38 -170.040 19.929 39* -6353.3 18 25.000 1.5603261 (L37) 40 -940.51 1 1.000 41 709.837 49.046 1.5603261 (L38) 42 One 777.441 1.000 43 464.646 49.037 1.5603261 (L39) 44 -1702.000 1.000 45 00 1.000 (AS) 46 440.106 38.516 1.5603261 (L310) 47 00 1.000 48 166.329 48.192 1.5603261 (L311) 49* 373.829 1.000 50 156.640 36.083 1.5603261 (L312) 51氺395.371 1.000 52 68.768 56.786 1.5603261 (L313:Lb) 53 00 3.000 1.4358760 (Lm) (wafer surface) (aspherical data) 4 faces • κ = 0 C4 = 1.21221〇xl〇·8 -3.845009x10- 13 Cg = 5.1 19436Χ10-18 Ci〇— 6·47479〇χ10·23 C12 = - 1.997456X10·27 C14= 1.323078χ 10'32 ◦16 = 〇28 200844677

15 faces: /c = 0 C4= - 3.85063〇χ1〇·7 C8=,2·568295χ10·15 C12= - 3.40678〇xl〇·22 C16= 〇23 face: /c = 〇C4= 1.329704xl0·7 C8 = 3.346355xl〇·16 C12= 7.373225XHT24 C|6 — 9.606865^1032 25 Side: /c = - 2.665106x C4= - 1.066975xl0·10 C8= — 5.590667X 10·21 C12= - 6·239338χ10·31 C16 = 〇26 face: /c = a 2.588777x C4= - 1.819317xl〇-10 C8= — 8.748792xl0·21 C12= 1.120376X10'30

Ci6 = 〇30 face: /c = 0 C4= - 1.043858xl〇-7 C8= 8.574530xl0'18 C12= — l_629028xl0_25 C6= - 5.281084xl〇·13 C10= 1.930263xl〇·18 C14= 1·973551 χ1〇 -26 C6 = 1.216643 x 1 O'11 C10= 4.14791〇xl〇·21 C14= - 9.486592xl〇-28 10-1 C6= - 7.672457xl〇-16 C10= 6.905673xl〇-27 C14= 2.454988X 10* 36 10·1 C6= — 1.486666x 1 O'15 C10= — 1.655271 x 1 O'25 C14= - 2.083659xl〇·35 C6= 1.979297xl〇-12 C10= - 6.571971 X 10,22 C14= 1.09713〇xl 〇·29 29 200844677

C ! 6 二〇32 Face: /c = 0 C4= 1.239136χ10*7 Cg= - 4.464856χ1〇·16 C12= 5.670647xl〇·24 C16= 1.45 1485χ10'32 34 Face: /c = 0 C4= - 1 ·865339χ10·8 C8= 8.017181X10'17 C12= - 4.300977X10&quot;25 C16= — 6.012233X 10-33 35 Face: /c = 0 C4= - 8.61051〇xl〇-8 C8= - 9.671 128xl〇·18 C12 = - 4.359344xl0*25 C16= - 2.36409〇xl〇·33 37 Face: /c = 0 C4= - 1.282338xl0·8 C8= - 6.809619X10·17 C12= 2.350885X 10'26 C16= 0 39 Face: / c = 0 C4= 3.207823xl(T9 C8= 7.902094xl〇·19 C6= - 7.350385xl0*12 C10= 2.806543xl〇·20 C14= - 5.859490xl0·28 C6= 1.579588xl〇-12 C10= 4.868532xl0*21 C14= 8.949767X10·29 C6= - 2.359035xl〇·12 C10= - 4.677184xl〇·21 C14= 2.838307X 10'29 C6= 1.229961 X10·12 C10= 8.124958xl0'22 C14= - 1.033414X 10·30 C6 = - 1.834369xl0·13 C10= 1.077742xl〇·22 30 200844677 C12= - 1.743502X10-27 C14= 〇C 16 = 〇49 Face: /c = 〇

C4= - 2.954763χ1〇-9 C8= - 8.095129xl〇·17 C12= - 1.436563xl〇·25 C16= 9·661656χ10_35 5 1 Face: /c = 〇C4= 3.487417x1ο.8 C8= - 3.161584x 1ο- 16 C12= - 2.49985 1 xl〇·24 C16= - 3.703232xl〇-33 (conditional value) (1) |M1| = 1.386 (2) |M2|= 1.529 (3) |M3|= 0.059 C6= 3.1 13771 xl〇·13 C10= 6.387662xl〇-21 C14=1.662021X10·30 C6= 4.154451 xl〇-12 C10= 2.815056xl〇·20 C14= 1.307082xl〇-28 Figure 8 shows the projection of the second embodiment A diagram of the spherical aberration, curvature of field, and distortion of the optical system. Fig. 9 is a view showing the lateral aberration of the projection optical system of the second embodiment. In the aberration diagram, NA indicates the numerical aperture on the image side (wafer side) of the projection optical system PL, and Υ indicates the image height (mm). As is clear from the aberration diagrams of Figs. 8 and 9, the second embodiment is also the same as the first embodiment, although a very large image side numerical aperture (NA = 丨·3) and a large and close square are ensured. The rectangular exposure area ER (16.5 mm x 13 mm) can also correct various aberrations for excimer laser light having a wavelength of 193.306 nm. 31 200844677 In the projection optical system PL of the present embodiment, since the liquid immersion type projection optical system is used, it is possible to secure a large effective image area while ensuring a large image side numerical aperture. That is, in each of the embodiments, the ArF excimer laser light having a center wavelength of 193.306 nm can ensure a high image side numerical aperture of i 3 and ensure a rectangular effective imaging area of 16.5 mm x 13 mm, which can be, for example, a rectangle of 16.5 mm x 13 mm. The circuit pattern is exposed once in the exposure region ER with high precision and high yield.

Further, in the above-described embodiment, in the third-order imaging type catadioptric imaging optical system, the second imaging system G2 is composed of a pair of concave reflecting mirrors CM1 and CM2 which are disposed to face each other. However, the present invention is not limited thereto, and the second imaging system G2 may have various configuration examples. For example, the second imaging system G2 may be configured as an optical system having two mirrors or an optical system having a reflecting surface. Further, in the above-described embodiment, the refractive member such as a lens is not disposed in the optical path between the pair of concave mirrors CMi and CM2 disposed to face each other, but the refractive member may be disposed in the optical path therebetween. Further, in the above embodiment, the present invention is applied to a liquid immersion type imaging optical system. However, the present invention is not limited thereto, and the present invention can also be applied to a dry type imaging optical system in which no liquid immersion is used in the image side region. Further, in the above embodiment, the first imaging system G1, the second imaging system G2, and the third imaging system (7) are arranged coaxially with each other. However, the present invention is not limited thereto, and various configurations may be employed in the arrangement relationship between the optical axis of the first system G1, the optical axis of the second imaging system G2, and the optical axis of the third imaging system (7). Further, as in the above embodiment, in the liquid immersion type projection optical system, the numerical aperture NA may increase beyond 丨. Used from the past for exposure 32 200844677

In the case of using a liquid immersion type projection optical system, it is preferable to illuminate a photomask (a reticle) as an object with a polarized illumination when the random polarized light of the light is used to deteriorate the imaging performance due to the polarization effect. At this time, the linearly polarized illumination of the line width of the mask (the reticle) and the line width pattern of the line-distance pattern is performed, and more S-polarized components are emitted from the pattern of the mask (the reticle). (TE polarization component), that is, diffracted light of a polarization direction component along the longitudinal direction of the line width pattern.

When the field shadow optical system PL is filled with liquid between the photoresist applied to the surface of the wafer w (substrate), the air (gas) is filled between the photoresists coated on the wafer by the projection optical system PL. Since the transmittance of the diffracted light which contributes to the S-polarized component (TE polarization component) on the resist surface is high, the numerical aperture na of the projection optical system exceeds even! High imaging performance is also achieved when 〇. A proper combination of the private phase mask and the oblique incident illumination method (the special basin is dipole illumination method), which is the same as the longitudinal direction of the pattern, which is not disclosed in the Japanese Patent Publication No. 6-188169, is more appropriate. effective. In particular, in combination with the linear polarization illumination method and the dipole illumination method, when the period of the line width and the line pitch pattern is limited to a predetermined direction, or when the hole pattern is dense along a predetermined direction, for example, a linear polarization illumination method is used in combination with The dipole illumination method is used to illuminate a halftone-type phase-shifting reticle with a transmittance of 6% (a pattern with a half-pitch of 45 nm), which is defined by the tangential circle of the two beams of the dipole that form the dipole of the illumination. Ming σ &amp; G·95, the radius of each beam of the pupil plane is G.125 σ, and the numerical aperture of the shirting optical system PL is ΝΑ = 12, which enables the depth of focus compared to the use of randomly polarized light ( 〇〇1?) Increase the degree of i5〇nm. 33 200844677 In addition, the linear illuminating illumination and the small σ illumination method (the σ value indicating the ratio of the numerical aperture NAi of the illumination system to the numerical aperture NAp of the projection optical system is 0.4 or less) In addition, for example, ArF excimer laser light is used as the exposure light, and a projection optical system PL of a 1/4 degree reduction ratio is used to make a fine line width and a line pitch pattern (for example, a line of 25 to 5 nm). Width and line spacing) exposure On the substrate p, according to the structure of the mask (for example, the fineness of the pattern or the thickness of the chrome), the mask is acted as a polarizing plate due to the Wave guide effect, and the polarized light is emitted from the mask μ more than the contrast. The diffracted light of the 8-polarized component (the ΤΕ-polarized component) of the diffracted light of the component (the ΤΜ-polarized component). However, when the projection optical system of the reduction ratio of 1/8 is used as in the present embodiment, the value on the reticle side is The aperture ΝΑ becomes smaller, so the influence of the waveguide effect can be neglected. Further, when the numerical aperture ΝΑ on the wafer side is further increased, it is preferable to use the linearly polarized illumination described above, but the illuminating mask of the random polarized light can also obtain high resolution performance. • In addition, linearly polarized illumination (S-polarized illumination) that coincides with the long-side direction of the line-width pattern of the reticle (the reticle), as disclosed in Japanese Patent Laid-Open No. Hei 6-5312, is centered on the optical axis. The combination of the linearly polarized polarization illumination method and the oblique incident illumination method in the tangential (circumference) direction of the circle is also effective. In particular, not only the pattern of the reticle (the reticle) extends in the predetermined _ direction When a plurality of green-green patterns are mixed in a plurality of green officials and in different directions (the line width is not mixed with the line-distance pattern), the same as disclosed in Japanese Laid-Open Patent Publication No. Hei 6-53120 By using the polarized illumination method and the belt illumination method which are centered on the optical axis: the linear direction of the line direction, the projection optical system knife 34 200844677 is also a re-enactment: high imaging performance can also be obtained when I am large. I(10)/gong ^ In addition to the various types of materials, the exposure point exposure method, for example, the two-wavelength exposure method, (for example, two wavelengths) is obtained by, for example, the method disclosed in Japanese Laid-Open Patent Publication No. Hei. The exposure is also effective for the present invention. The multi-wavelength exposure method of the I mesh effect is applied. Further, in the above embodiment, the boundary lens which contacts the liquid Lm is obliquely imaginary.

乂The wavelength of the exposure light is right. ·^ The anti-long eight-shaped quartz glass-shaped 有 with a refractive index of 156' can also be formed with a material having a refractive index of 筮 筮 &&gt; . This day, as the liquid Lm, it is also used to replace the water, and to use water with a higher refractive index than pure water. For example, as the material for forming the boundary lens, yttrium aluminum garnet ([Lutetium Aluminum Gamet] LuAG) having a refractive index of 2.1435 for the center wavelength of light and magnesium oxide (MgO) having a refractive index of 21 for use light can be used. Calcium oxide (Ca〇) having a refractive index of 2. 7 for light and spinel ([crystalline magnesium aluminum spinel] MgAl2〇4) having a refractive index of 187 at a center wavelength of light used. Further, as the liquid Lm, a high refractive index liquid having a refractive index greater than 丨·5 for the center wavelength of the used light can be used. For the high refractive index liquid, for example, a hydrocarbon-based medium (liquid) can be used. In the exposure apparatus according to the above embodiment, the illuminating device illuminates the reticle (mask) (illumination step), and the transfer pattern formed on the reticle is exposed to the photosensitive substrate (exposure step) by using the projection optical system. Manufacturing micro-elements (semiconductor elements, photographic elements, liquid crystal display elements, thin film magnetic heads, etc.). In the following, a description will be given of a method for forming a predetermined circuit pattern on a wafer or the like as a photosensitive substrate by using the exposure apparatus of the present embodiment to obtain a semiconductor element as a micro-clamp. First, in step 3 of Figure 10, the metal film is vaporized on the i-row wafer. Next, at (4) 3, 2, a photoresist is coated on the metal film on the wafer of the batch. Thereafter, in step (10), the pattern image on the photomask is sequentially exposed to each of the irradiation regions on the wafer of the batch 1 by the exposure optical system using the exposure device of the present embodiment. Then, in the step of stepping, after developing the photoresist on the wafer of the one batch, in the step state, the photoresist pattern is used as a mask on the wafer of one batch, and the corresponding A circuit pattern of the pattern on the photomask is formed on each of the illumination regions on each of the wafers. i Feng S' further advances the formation of the circuit pattern of the upper layer, etc., thereby fabricating components such as parts. According to the above semiconductor element manufacturing method, a half (four) element having a very fine circuit pattern is obtained. Further, in steps 301 to 305, on the wafer, ", metallization, applying a photoresist to the metal film, followed by exposure, development, and ember @ i etching, but of course Before the step 4 is formed, after forming an oxide film on the wafer, the photoresist is coated on the emulsified pancreas of the crucible, and then exposed. The steps of light, development, and surname are In the exposure of the sinister sinus, Xia' can be obtained as a micro-element liquid day by forming a predetermined pattern (circuit pattern, electrode #t%曰β, 柽 pattern, etc.) on a plate (glass substrate). Japanese display element. The following is an example of the flowchart of FIG. In Fig. 1 i, in the step of forming the film 401, the exposure of the mask is performed by exposing the pattern of the mask to the glass substrate on which the photoresist is applied to the photosensitive substrate C, that is, the step of performing the light lithography. By this photolithography step, a predetermined pattern including a plurality of electrodes or the like is formed on the photosensitive substrate. Thereafter, the exposed substrate is formed into a predetermined pattern on the substrate by a respective steps of a developing step, an etching step, a photoresist stripping step, and the like, and then moved to the color filter forming step 402. Next, in the color filter forming step 402, a plurality of groups of three points corresponding to R (Red), G (Green), and 10 B (Blue) are arranged in an array, or three straight lines of R, 〇, and b are filtered. The color filter group is arranged in the direction of the plurality of horizontal scanning lines to form a color former. Next, after the color filter forming step 402, the cell assembly step 403 is performed. In the unit assembling step 403, the liquid crystal panel (liquid crystal cell) is assembled by using the substrate having the predetermined pattern obtained by the pattern forming step 4〇1 and the color filter obtained by the color filter forming step 4〇2. In the unit assembly step 403, for example, a liquid crystal is injected between a substrate having a predetermined pattern prepared in the pattern forming step 4〇1 and a color filter formed by the color filter forming step 4〇2 to fabricate Liquid crystal panel (liquid crystal cell). Thereafter, in the module assembling step 404, each element such as a circuit and a backlight for performing a display operation of the assembled liquid crystal panel (liquid crystal 7G) is mounted to complete the liquid crystal display element. According to the above method for producing a liquid crystal display element, a liquid crystal display element having an extremely fine circuit pattern can be obtained with high yield. Further, in the above embodiment, an ArF excimer laser light source is used, but the present invention is not limited thereto, and other suitable light sources such as a h laser light source may be used. However, when F2 laser light is used as the exposure light, the liquid system uses a gas system such as a fluorine-based oil or a superfluorinated poly-(pFpE), which is transmissive to F2 field light, 37 200844677 liquid. Further, in the above embodiment, the present invention is applied to an exposure apparatus of a single exposure type. However, the present invention is not limited thereto, and the present invention is also applicable to a projection optical of a reticle (photomask) and a wafer (photosensitive substrate). The system moves a scanning exposure device that performs scanning exposure. Further, in the above embodiment, the present invention is applied to a projection optical system in which the exposure apparatus is mounted. However, the present invention is not limited thereto, and the present invention can also be applied to other suitable three-time imaging type catadioptric imaging optical systems. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a view schematically showing the configuration of an exposure apparatus according to an embodiment of the present invention. Fig. 2 is a view showing the positional relationship between the exposed area of the rectangle and the optical axis. Fig. 3 is a view schematically showing the configuration between a boundary lens and a wafer. Fig. 4 is a view showing the lens configuration of the projection optical system of the first embodiment. Fig. 5 is a view showing spherical aberration, field curvature, and distortion of the i-th embodiment. Fig. 6 is a view showing the lateral aberration of the projection optical system of the first embodiment. Fig. 7 is a view showing the lens configuration of the projection optical system of the second embodiment. Fig. 8 is a view showing spherical aberration, field curvature, and distortion of the second embodiment. 38 200844677 Fig. 9 is a view showing the lateral aberration of the projection optical system of the second embodiment. Figure 10 is a flow chart of a method for fabricating a semiconductor device. Figure 11 is a flow chart showing the method of producing a liquid crystal display element. [Main component symbol description]

Lb boundary lens Lm liquid (pure water) PL projection optical system R reticle (mask) RST reticle stage W wafer 1 illumination optical system 14 main control system 21 water supply and drainage mechanism 39

Claims (1)

200844677 X. Patent application: The image of the face is formed on the second side. 1. The imaging optical system is characterized by the fact that The 苐1 imaging system is disposed between the first conjugate position and the first surface; the first optical conjugate of the first optical conjugate is disposed in the optical position with the ith扼 = between the conjugate position and the first conjugate position; and the third image "is disposed at the second common position and the second surface. The imaging magnification of the first imaging system is M1. When the imaging magnification of the second imaging system is M2 and the imaging magnification of the third imaging system is M3, the following conditions are satisfied: 〇.8&lt;|Mlj&lt; 2 〇.8&lt;|M2|&lt; 2 〇·〇3 The imaging optical system of claim 1, wherein the first imaging system and the third imaging system are refractive optical systems; the second imaging The system is an optical system having a reflecting surface. 3. The imaging optical system of claim 2, wherein the imaging system has two mirrors. 4. The imaging optical of claim 3 a system in which the two mirrors are a pair of concave mirrors disposed opposite each other. The imaging optical system of claim 1, wherein the optical path between the imaging optical system and the second surface is filled with a liquid. 200844677 - 6. The imaging optical system of claim 5, the second The image of the first surface is formed on the second surface. ^,, _7. The imaging optical system of the patent scope, wherein the image system, the second imaging system, and the third imaging system are &gt; 8. The imaging optical system according to the scope of the patent application, wherein the condition 〇·8 &lt;|M1|&lt; 2, satisfies the following condition: 0.8 &lt;|M1|&lt;1.7. The imaging optical system of claim i, wherein the condition 〇·8&lt;|M1|&lt; 2, satisfies the following condition: 〇·9&lt;|M1|&lt; 2 〇10· as claimed The imaging optical system of the first aspect, wherein the condition 0·8&lt;|Μ1|&lt; 2, satisfies the following conditions: · 〇 _9 &lt; | Μ 1 | &lt; 1.7 〇 1 1 · as claimed in the first item The imaging optical system, wherein, in the spring, the condition 〇·8&lt;|Μ2|&lt; 2, satisfies the following condition: 〇·8&lt;|Μ2|&lt; 1 7 〇12· The imaging optical system of claim 1, wherein the condition 0·8&lt;|Μ2|&lt; 2, satisfies the following condition: ·········Μ2|&lt; 2 〇13 The imaging optical system of claim 1, wherein the condition 〇 _8 &lt; | Μ 2 丨 &lt; 2, satisfies the following conditions: ······················ The imaging optical system of the first aspect of the patent, wherein the inter-acquisition fetching takes 41 41.44677 generations of the condition 0·〇3&lt;|Μ3|&lt; 〇·2, satisfying the following conditions·········· ; |Μ3|&lt; 0.16. An exposure apparatus comprising: a light-receiving light from a predetermined pattern set on the first surface, and projecting the pattern image onto a photosensitive substrate set on the second surface; The imaging optical system of any of the 14 items. The exposure apparatus of claim 15, wherein the pattern is exposed to the photosensitive substrate in a single projection while the photosensitive substrate is stationary. A method for manufacturing a component, comprising: an exposing step of exposing the erbium pattern to the photosensitive substrate using an exposure device of claim 15; The photosensitive substrate is developed. The surface of the photosensitive substrate is formed to correspond to the shape of the pattern, and the processing step is performed, and the surface of the photosensitive substrate is processed through the mask layer. XI. Schema: As the next page. 42