TW571344B - Manufacturing method for projection optic system - Google Patents
Manufacturing method for projection optic system Download PDFInfo
- Publication number
- TW571344B TW571344B TW091114027A TW91114027A TW571344B TW 571344 B TW571344 B TW 571344B TW 091114027 A TW091114027 A TW 091114027A TW 91114027 A TW91114027 A TW 91114027A TW 571344 B TW571344 B TW 571344B
- Authority
- TW
- Taiwan
- Prior art keywords
- crystal
- light
- optical
- axis
- mentioned
- Prior art date
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Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70241—Optical aspects of refractive lens systems, i.e. comprising only refractive elements
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/12—Halides
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
- G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70591—Testing optical components
- G03F7/706—Aberration measurement
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
- G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
- G03F7/70966—Birefringence
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70975—Assembly, maintenance, transport or storage of apparatus
Landscapes
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Inorganic Chemistry (AREA)
- Lenses (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Polarising Elements (AREA)
Abstract
Description
571344 A7 B7 五、發明説明(1 ) [發明之技術領域] 本發明係關於具有投影光學系統、該投影光學系統之製 造方法、及該投影光學系統之曝光裝置,尤其關於適合於 以光刻(photolithography)法製造半導體元件或液晶顯示元 件等微裝置(micro device)時使用的曝光裝置之投影光學系 統。 [先前技術] 形成半導體積體電路或液晶顯示器等電子裝置(微裝置) 之微小圖案時,一般使用經以投影曝光裝置將欲形成的圖 案按比例擴大成4〜5倍左右所描繪之遮光罩(下稱為標線片 (reticule)) ’加以縮小曝光而轉印於晶片等光敏性基板(被 曝光基板)上之方法。此種投影曝光裝置,一向是使其所用 之曝光波長朝短波長側轉移而繼續發展。 目前,曝光波長係以KrF (氪氟)準分子雷射之248 nm為 其主流,但更短波長之ArF (氬氟)準分子雷射之193 nm也 正在付諸於實用階段中。另外也曾出現一種使用諸如波長 157 nm之F2雷射或波長146 nm之Kr2雷射、波長126 nm之Ar2 雷射等,所謂的稱為真空紫外線領域之波長帶光的光源之 投影曝光裝置。此外由於引用投影光學系統之大孔徑(NA) 化也能達成高解析度化,因此不僅是為使曝光波長短波長 化而推動開發,同時也著手於具有更大孔徑之投影光學系 統之開發。 如上所述對於波長短的紫外線領域之曝光光,透射率或 均勾性良好的光學材料(透鏡材料)自然會受到限制。對於 ______ _ 4 _ 本紙張尺度適用中國國家標準(CNS) Α4規格(210 X 297公釐) A7571344 A7 B7 V. Description of the Invention (1) [Technical Field of the Invention] The present invention relates to a projection optical system, a manufacturing method of the projection optical system, and an exposure device of the projection optical system, and more particularly to a device suitable for photolithography ( photolithography) The projection optical system of an exposure device used in the manufacture of micro devices such as semiconductor elements or liquid crystal display elements. [Prior art] When forming tiny patterns of electronic devices (microdevices) such as semiconductor integrated circuits or liquid crystal displays, generally, a light-shielding mask drawn by expanding the pattern to be formed by a projection exposure device to about 4 to 5 times is used. (Hereinafter referred to as a reticule.) A method of reducing the exposure and transferring it to a photosensitive substrate (substrate to be exposed) such as a wafer. This type of projection exposure device has been developed by shifting the exposure wavelength used to the short wavelength side. Currently, the exposure wavelength is mainly 248 nm of KrF (fluoride) excimer laser, but the shorter wavelength of 193 nm of ArF (argon fluoride) excimer laser is also being put into practical use. In addition, there has been a projection exposure device using a light source with a wavelength of light in a vacuum ultraviolet field, such as a F2 laser with a wavelength of 157 nm or a Kr2 laser with a wavelength of 146 nm and an Ar2 laser with a wavelength of 126 nm. In addition, the introduction of a large-aperture (NA) projection optical system can also achieve high-resolution, so not only to promote the development of a shorter exposure wavelength, but also to develop a projection optical system with a larger aperture. As mentioned above, for exposure light with a short wavelength in the ultraviolet field, optical materials (lens materials) with good transmittance or uniformity are naturally limited. For ______ _ 4 _ This paper size applies Chinese National Standard (CNS) Α4 size (210 X 297 mm) A7
=ArF準分子雷射為光源之投影光學系統而言,其透鏡材 料固也可使用合成石英玻璃,但只用一種類之透鏡材:仍 ,無法作到徹底的補正色像差,目而部分透鏡,必須使用 :化鈣結:曰(螢石)。另方面對於以F2雷射為光源之投影光 學系統而言,其可供使用之透鏡材料實質上係被局限於 化鈣結晶(螢石)。 、 [發明所欲解決之課題] 取近W有篇報導謂:對於如上述波長短的紫外線光來說 ,即使為屬六方晶系之氟化鈣結晶(螢石),也有固有雙折 射存在1對於如料製造電子纟置之投影A帛系統般需 具備超高精度之光學系統而言,透鏡材料之雙折射所造成 <像差是致命的問題,因而採用能實質上回避雙折射影響 之透鏡結構及透鏡設計是不可缺少的。 有鑑於上述課題,本發明之目的在於提供一種即使使用 例如像螢石具有固有雙折射之結晶材料,也能在不致於受 J i折射之貫質性影響下確保良好的光學性能者。 [課題之解決手段] —為達成上述目的,本發明申請專利範圍第丨項之發明係 影光學系統之製造方法,該投影光學系統係用以根 與疋波長之光而使第一面之像成像於第二面上之投影光 :系j,含有由對於上述特定波長之光具有透射性之至少 •:寺輛晶系結晶材料構成之折射構件,其特徵為包含有 —又:t工序’其包含有邊評估有關第一偏光成分及與該第 偏光成勿互異的第二偏光成分之光邊設定上述至少一 丄j44 發明説明( 個等軸晶系結晶材料所構成折射 之輔助工序,藉以取得特定的設=日日軸万位 序,其係用以準備上述等軸晶系&2 ’結晶材料準備工 ,其係用以測定上述等轴晶系::枓::軸:則定工序 带士、T $,甘# Λ 村枓又晶軸;折射構件 據而由上述等序所得之之上述設計數 …裝工序,;定形狀的折射構件; 件=抽方位而配置上述折射十工序所得上述折射構 η t::t:明’則由於可邊就複數個偏光成分而評估起 因万m结晶材料之雙折 晶材料所構成折射構件之晶轴組配角度設 影響變得極小,因而可確保良好的光學性 又^成此使又折射 ::射率分布之折射構件之工序,且上述特定 -、依知、在上述設計工序所得之上述設計數據而決定。 射發明’則由於可藉具有特定的折射率分布之折 站構:而補正經使等袖晶系結晶材料之組配角度最適化所 能:的雙折射影響之殘逢,因而可更加確保良好的光學性 園二發:之申二專:範圍第3項之發明係在有關^ 射上述特定的雙折射率分布為在上述折 、十、 /、有特疋的應力雙折射率分布、及起因於設在上 U折射構件的薄膜之雙折射分布中之至少一方。 571344 五 發明説明( 圍利範圍第4项之發明係在有關申請專利範 ^ Λ明中,上述具有特定的雙折射率分布之折 射構件係由石英或摻雜有敗之石英構成。^布《折 本毛月申叫專利範圍第5項之發明係在有關申,專利f 圍第2至4項中任y π專利fe 率分布的折射構件之有效徑為扣,由上述第一面上:一: 發出之光束通過具有上述應力雙折射率分布之折射構件時 足光束徑為#時,應滿足下列條件式·· 〇.6<^p/(z)c ^ 1 若依照本發明,則可使具有應力雙折射率分布的折射構 件足位置,位於為以具有該應力雙折射率分布之折射構件 來補正起因於等轴晶系結晶材料之雙折射所需之最適當位 置,5F即可 <吏具有應力雙折射率分布的折射構件之雙折射 補正能力發揮至最大限度之位置。 本發明申請專利範圍第6項之發明係在有關申請專利範 圍第1至5項中任一項之發明中,更包含使上述投影光學系 統中至少一個光學構件之表面形狀形成為非球面形狀之非 球面形成工序,且該非球面形狀係依照在上述設計工序所 得之設計數據而決定。 若依照本發明,則可以非球面補正起因於等軸晶系結晶 材料所產生之像差(aberration)中之標量(scaiar)成分像差(不 依存於偏光方向之像差)。 本發明申請專利範圍第7項之發明係在有關申請專利範 圍第6項之發明中,上述非球面形狀係關於上述光學構件 本紙張尺度逋用中國國家標準(CNS) A4規格(210 X 297公釐) 571344 五、發明説明( 之光&軸而具有非對稱的非球面形狀。 々本發明申請專利範圍第8項之發明係在有關申請專利範圍 =1至J項中任一项之發明巾,上述組裝工序具有:光學性 月匕〃、]二輔助工序,其係測定經予組裝妥的上述投影光學系 、、/、光子丨生此’光學構件調整輔助工序,其係為使經測定 所2之上述光學性能符合特定的光學性能而變更上述投影 光學系統中至少一個光學構件之位置及/或姿勢;以及非球 面力辅助工序,其係為使經予測定的上述光學性能符合 特足的光學性能而使上述投影光學系統中至少一個光學構 件之表面形狀形成為非球面形狀。 予構 絲照本發明,則由於可在製造投影光學系統時,例如 可藉光學構件之位置•姿勢等之調整而補正低次像差,且 可根據經測得之光學性能所設定之非球面而補正高次像差 ,因而能防止起因於光學構件之組裝誤差等之光學性能 化。 ^發明U利範圍第9項之發明係在有關中請專利範 圍第8頁(發明中,上述非球面形狀係也考慮由上述設計 工序所得之設計數據而決定。 若依照本發明,則可將起因於光學構件之組裝誤差等之 像差、、與起因於等轴晶系結晶材料之固有雙折射所產生像 差中之標量成分像差雙方加以補正。 本發明申請專利範圍第10項之發明係在有關中請專利範 圍乐頁中任一項之發明中’上述組裝工序包含用以調 整由上述寺抽晶系構成之折射構件的光轴周圍方位角之方 本纸張尺度適用中國國家標準(CNS) A4規格(210X297公 m 裝 8 - 571344 A7 B7 五、發明説明(6 位角調整輔助工序。 右'依照本發明,則可在組裝投影光學系統時將起因於由 等·軸晶系、结晶材料所構成折射構件之晶軸方位有誤差而造 成的光學性能退化,加以補正。 本發明申請專利範圍第11項之發明係在有關申請專利範 圍第10項之發明中,上述組裝工序包含偏光光學性能測定 輔助工序’其係用以關於複數個偏光成分之光而測定經予 組裝妥的上述投影光學系統之光學性能,而上述方位角調 整輔助工序則根據上述經測定所得之關於複數個偏光成分 <光學性能而將由上述等軸晶系所構成上述折射構件之上 述万位角調整成能使關於複數個偏光成分之光學性能符合 特定值。 右依照本發明,則由於在組裝投影光學系統時,測定關 於複數個偏光成分的投影光學系統之像差,並根據該測定 結果而調整由等軸晶系結晶材料所構成折射構件之晶軸方 位角,因而可將這些複數個偏光成分之像差補正得良好, 進而也可將標量成分之像差補正得良好。 t發明申請專利範圍第丨2項之發明係在有關申請專利範 圍第10項之發明中,上述組裝工序包含光學性能測定輔助 工序,其係用以測定經予組裝妥的上述投影光學系統之光 學性能,而上述方位角調整輔助工序則根據上述經測定所 得〈光學性能Μ由上料構成上料射構件之 上二方位角調整成能使上述投影光學系統之光學性能符合 特定值。 -9 - 本紙張尺度適财a g家標準(CNS) Α4規格(21G_X297公董了 五、發明説明(7 ) 若依照本發明,則由於在組裝投影光學系統時即測定投 =學系統心像差’並根據該測定結果,調整由等軸晶系 冓件之晶軸方位角,因而可將投影光 学糸統 < 像差補正得良好。 在該申請專利範圍第12項之於明由 則以測定投影光學 :系广1像差’並根據該標量像差之測定結果而 寺軸晶系結晶材料所構成折射構件之晶轴方位角為宜。此 經予測定所得之標量像差而預測複數個偏 構件晶軸方位角之方=1 =材料所構成折射 、 飞為更佳猎此便可簡化投影光學系 統0 μ 本發明中請專利範圍㈣項之發明係在有關中請專利範 圍弟1至巧項中任一項之發明中,上述等軸晶系之結晶材 料係含有氟化#5或氟化鋇。 本發明中請專利範圍第14項之發明係在有關中請專利範 圍第⑷3項中任—項之發明中,上述特定波長為2〇〇_ 下之波長。 本發明申請專利範圍第15項之發明係依照有關申請專利 範圍第1至14項中任一項發明之製造方法而製造之投影光 學系統。 為達成上述目的,本發明申請專利範園第16項之發明係 一種用於根據特定波長之光而使第一面之像成像於第二面 上足投影光學系統,其特徵為具有:等軸晶系折射構件, 其係由對於上述特定波長之光具有透射往之至少一個等軸 571344 五 發明説明(8 以及非晶折射構件,其係由用以補價 ==發明’則由於可以非晶折射 構件所具有固有雙折射引起之光學性能S ,因而可確保良好的光學性能。 匕退化 ,發明申請專利範固第17項之發明 ,,頁之發明中,上述等轴晶系折射構件係 ^[100]或光學上與該晶軸_] 等 軸晶系折射構件之光柄大致相符。 ’、上迷寺 『依'、本發明’則由於形成為使晶 ::]成等效W轴,與上述等轴晶系折射== ί目付可使等軸晶系折射構件之 軸角成為相對於光軸而呈較大的角二= 心寺軸日日系折射構件之固有雙折射對於 本發明申請專利範圍第18項之發明係在 晶系折射構件,係含有複數個等抽晶系折射構;成= 少 ==?射構件之晶轴方位,係各自設定成可Γ 由上❸固有雙折射所引起光學性能退化。 即 響 若依^本發明,則由於組合複數個等轴晶系折射 可大致使廷些複數個等轴晶系折射構件之固有 消除,因:可在減少非晶折射構件之雙折 : 良好的光學性能。 男I下確保 11 - 本紙張尺歧财s ®家標準(CI^S??10 X 297公釐) 571344 五、發明説明(9 1月申明專利範圍第丨9項之發明係在有關申請專利範 罘18頁之發明中,通過上述晶軸方位係設定成可減少因 义固有又折射所引起上述光學性能退化的上述等軸晶系 折射構件《光線’相對.於光軸的角度之最大值係超過別度。 由於通過光線相對於光軸之最大角度超過Μ度之等轴晶 系折射構件容易$到固有雙折射之影#,因此在本發明則 將申^專利|巳圍第! 8頃之補正方法適用於該最大角度超過 20度《等軸晶系折射構件,藉以減少雙折射之影響。 t發明申請專利範圍第20項之發明係在有關申請專利範 圍第18或19頁之發明中,使上述晶轴方位設定成可減少因 上述固有雙折射所引起上述光學性能退化的上述等軸晶系 折射構件,係配置於上述投影光學系統中最上述第二面側 的曈位置與上述第二面之間。 由於投影光學系統中供配置於最第二面側的瞳位置與第 二面之間的等軸晶系折射構件容易受到固有雙折射影塑, 因而在本發明則將申請專利範圍第17項之補正方法適二於 配置於最第二面側的瞳位置與第二面之間,藉以減少 射影響。 本發明申請專利範圍第21項之發明係在有關申請專利範 圍第18至20項中任-項之發明中,上述複數個等轴晶系折 射構件具有:第-群光透射構件,其係形成為使其晶轴 [100]或光學上與該晶軸[100]成等效的晶軸與光軸大致相 符;以及第:群光透射構件,其係形成為使其晶師叫或 光學上與該晶軸[100]成等效的晶軸與光軸大致相符;且上 12 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 571344= For ArF excimer laser as the light source of the projection optical system, the lens material can also use synthetic quartz glass, but only one kind of lens material: still, can not be done to completely correct chromatic aberrations, and part Lenses must be used: Calcium Knot: Yue (fluorite). On the other hand, for projection optical systems using F2 laser as the light source, the available lens materials are essentially limited to calcium crystals (fluorite). [[Problems to be Solved by the Invention] It is reported in a close article that for ultraviolet light having a short wavelength as described above, even if it is a calcium fluoride crystal (fluorite) of a hexagonal crystal system, there is inherent birefringence1 For optical systems that require ultra-high precision, such as the projection A system used to manufacture electronic devices, the aberration caused by the birefringence of lens materials is a fatal problem. Therefore, the effect of birefringence can be substantially avoided. The lens structure and lens design are indispensable. In view of the above-mentioned problems, an object of the present invention is to provide a person who can ensure good optical performance without being affected by the consistency of J i refraction even when a crystalline material such as fluorite has inherent birefringence. [Solutions for solving the problem]-In order to achieve the above-mentioned object, the method for manufacturing an invention-based shadow optical system according to the scope of application of the present invention for patent application, the projection optical system uses the light of the root and chirp wavelength to make the first surface image The projection light imaged on the second surface: Department j, which contains a refractive member made of at least •: Tera crystal system crystalline material that is transmissive to light of the above specific wavelengths, which is characterized by including-and: t process' It includes setting the at least one of the above-mentioned at least one of the above-mentioned j44 invention evaluation while evaluating the light of the first polarized light component and the second polarized light component that is different from the first polarized light. To obtain a specific setting = daily-axis axis order, which is used to prepare the above-mentioned equiaxed crystal system & 2 'Crystal Material Preparation Worker, which is used to determine the above-mentioned equiaxed crystal system :: 枓 :: 轴: 定 定Process belts, T $ , 甘 # Λ 枓 Village crystal axis; the above-mentioned design number obtained by the above-mentioned order of the refractive member according to the above-mentioned ... installation process; a shaped refractive member; pieces = draw orientation and configure the above-mentioned refractive index Process income The refraction structure η t :: t: Ming 'can be used to evaluate the polarization axis assembly angle of the refraction member composed of the birefringent material of 10,000 m crystalline material because it can evaluate the polarization components. The process of ensuring good optical properties and refraction: refracting member of the emissivity distribution, and the above-mentioned specific-, knowledge-based, and design data obtained in the above-mentioned design process are determined. Refraction structure with a specific refractive index profile: The correction angle optimizes the matching angle of the iso-sleeve crystal material: the birefringence effect is lost, so it can ensure a good optical performance. The second special application of the scope of the invention: the invention of the third item is related to the above-mentioned specific birefringence distribution, which is the above-mentioned special birefringence distribution of stress, birefringence, and / or the special birefringence distribution caused by the stress, and the refraction caused by the upper U At least one of the birefringence distributions of the thin film of the member. 571344 Five invention descriptions (The fourth invention of the scope of interest is in the relevant patent application ^ Λ Ming, the above-mentioned refractive member with a specific birefringence distribution is made of quartz Composition of doped quartz. ^ "The invention of the 5th invention in the original patent application is related to the patent application, and the effective diameter of the refracting member of any of the y π patent fe distributions in the 2nd to 4th patents is f The buckle is from the above first surface: One: When the emitted light beam passes through the refractive member with the stress birefringence distribution, when the full beam diameter is #, the following conditional expression should be satisfied: .6 < ^ p / (z) c ^ 1 According to the present invention, the refraction member having a stress birefringence distribution can be positioned at a sufficient position to correct the birefringence caused by the equiaxed crystal material with the refraction member having the stress birefringence distribution. The most suitable position is required, and 5F can be used to maximize the birefringence correction ability of the refractive member with a stress birefringence distribution. The invention in item 6 of the scope of patent application of the present invention is in The invention according to any one of items 1 to 5, further comprising an aspheric surface forming step of forming a surface shape of at least one optical member in the above-mentioned projection optical system into an aspherical shape, and the aspheric shape is in accordance with the above It is determined by the design data obtained in the design process. According to the present invention, it is possible to aspherically correct a scalar component aberration (aberration that does not depend on the direction of polarization) in aberration caused by an equiaxed crystalline material. The invention in item 7 of the scope of patent application of the present invention is in the invention in item 6 of the scope of patent application, and the aspheric shape is related to the above-mentioned optical component. This paper uses the Chinese National Standard (CNS) A4 specification (210 X 297 public). 571) 571344 V. Description of the invention (The light & axis has an asymmetric aspherical shape. 之 The invention in the eighth patent application of the present invention is an invention in any one of the related patent scopes = 1 to J The above-mentioned assembling step includes: an optical moon dagger, a secondary auxiliary step, which measures the pre-assembled projection optical system, and / or a photon to generate the optical member adjustment auxiliary step. The optical performance of the measurement laboratory 2 is in accordance with the specific optical performance, and the position and / or posture of at least one optical member in the projection optical system is changed; and an aspheric force assisting step is to make the optical performance determined in accordance with special characteristics Sufficient optical performance, the surface shape of at least one optical member in the above-mentioned projection optical system is formed into an aspherical shape. When manufacturing a projection optical system, for example, low-order aberrations can be corrected by adjusting the position and posture of the optical member, and high-order aberrations can be corrected based on the aspheric surface set by the measured optical performance. Optical performance due to assembly errors of optical components, etc. ^ The invention of the 9th invention belongs to the patent scope of the related patent, page 8 (In the invention, the above-mentioned aspheric shape system is also considered by the above-mentioned design process. It is determined by design data. According to the present invention, aberrations caused by assembly errors and the like of optical members and scalar component aberrations in aberrations caused by inherent birefringence of an equiaxed crystal material can be used. The invention in item 10 of the scope of patent application of the present invention relates to the invention in any one of the leaflets in the patent scope of the invention. The above-mentioned assembling process includes an adjustment of the optical axis of the refracting member composed of the above-mentioned crystal extraction system. The dimensions of the surrounding azimuth are in accordance with the Chinese National Standard (CNS) A4 specifications (210X297m m installed 8-571344 A7 B7) V. Description of the invention (6-digit angle adjustment auxiliary tool … 'According to the present invention, when assembling a projection optical system, optical performance degradation caused by an error in the crystal axis orientation of a refractive member composed of an isoaxial crystal system and a crystalline material can be corrected. The invention of item 11 of the patent scope is the invention of item 10 of the related patent application scope. The above-mentioned assembly process includes a polarizing optical property measurement assisting process, which is used to measure the above-mentioned pre-assembled light about the light of a plurality of polarizing components. The optical performance of the projection optical system, and the azimuth angle adjustment auxiliary step adjusts the ten-degree angle of the refraction member composed of the equiaxed crystal system according to the measured plurality of polarizing components < optical performance. The optical performance of a plurality of polarizing components is made to conform to a specific value. According to the present invention, when the projection optical system is assembled, the aberrations of the projection optical system with respect to a plurality of polarized light components are measured, and the crystal axis orientation of the refractive member composed of an equiaxed crystal material is adjusted based on the measurement results. Angle, the aberrations of these plural polarization components can be corrected well, and the aberrations of the scalar components can also be corrected well. The invention of item 2 of the patent application scope of invention is the invention of item 10 of the related patent application scope. The above assembly process includes an optical performance measurement auxiliary process, which is used to measure the optical performance of the above-mentioned projection optical system after assembly. Performance, and the above-mentioned azimuth angle adjustment auxiliary step is adjusted according to the above-mentioned measured <optical performance M consisting of the top material and the top material shooting member to adjust the two azimuth angles so that the optical performance of the projection optical system conforms to a specific value. -9-Standards for this paper (CNS) A4 specification (21G_X297) 5. Invention description (7) According to the present invention, since the projection optical system is measured when the projection optical system is measured, the aberration of the academic system is measured. And according to the measurement result, the azimuth angle of the crystal axis of the equiaxed crystal system is adjusted, so that the projection optical system < aberration can be corrected well. It is measured in the reason of the 12th item in the scope of the patent application. Projection optics: System wide 1 aberration ', and according to the measurement result of the scalar aberration, the azimuth angle of the crystal axis of the refracting member composed of the crystal material of the temple axis crystal system is appropriate. The scalar aberration obtained through the measurement is predicted to predict a plurality of The square of the azimuth angle of the crystal axis of the deflection member = 1 = the material is composed of refraction, which is better for hunting. This can simplify the projection optical system. 0 μ The invention claimed in the patent scope item is related to the patent scope. In the invention of any one of the smart items, the crystal material of the equiaxed crystal system described above contains fluorinated # 5 or barium fluoride. The invention claimed in claim No. 14 of the present invention is related to the claimed item No. 23 Any—in the invention, the above The specific wavelength is a wavelength below 2000. The invention of claim 15 of the present invention is a projection optical system manufactured in accordance with the manufacturing method of the invention of any of claims 1 to 14. In order to achieve the above, For the purpose, the invention of claim 16 of the present invention applied for a patent range is a foot projection optical system for imaging an image of a first surface on a second surface according to light of a specific wavelength, and is characterized by: equiaxed crystal refraction The structure is composed of at least one isometric axis 571344 which is transmitted to the light of the above specific wavelength. (5) The invention description (8) and the amorphous refraction component is used to compensate the price == invention. The optical performance S due to the inherent birefringence can ensure good optical performance. The degradation of the dagger, the invention of the patent application No. 17 of the invention patent application, and the invention of the page, the above isometric crystal system refractive member system ^ [100] Or optically, it is roughly consistent with the optical axis of the isometric crystal-based refractive member of this crystal axis.], "Shangmi Temple" Yi, the present invention "is formed so that the crystal ::] is equivalent to the W axis, which is the same as the above. Wait Axial crystal system refraction == ί 目 付 can make the axis angle of the equiaxed crystal system refraction member become a larger angle relative to the optical axis. Second = The intrinsic birefringence of the Japanese-Japanese refraction member of the Shinji axis. The invention of item 18 is a crystal-based refraction member, which contains a plurality of isotropic crystal-refraction structures; the crystal axis orientation of the formation member is less than or equal to that of the projection member, and each is set so that Γ can be caused by the intrinsic birefringence of the upper lens. In other words, according to the present invention, the combination of the plurality of equiaxed crystal system refractions can substantially eliminate the inherent refraction of the plurality of equiaxed crystal system refraction members, because the birefringence of the amorphous refractive member can be reduced. : Good optical performance. Male I will ensure 11-this paper ruler Qi Cai s ® home standard (CI ^ S ?? 10 X 297 mm) 571344 V. Description of the invention (September, the scope of patent declared in January of January 9th In the invention on page 18 of the related patent application, the above-mentioned equiaxed crystal-based refractive member "light" relative to light is set by the above-mentioned crystal axis azimuth system to reduce the aforementioned optical performance degradation caused by inherent refraction. The maximum value of the angle of the axis is super Do not degrees. Since the maximum angle of the light relative to the optical axis through the isometric crystal-based refractive member exceeding M degrees is easy to reach the inherent birefringence of the shadow #, the present invention will apply for a patent | The 8-hectare correction method is applicable to the maximum angle of more than 20 degrees "isometric crystal system refractive member, thereby reducing the effect of birefringence. The invention of item 20 of the scope of patent application of the invention is the above-mentioned equiaxed crystal in which the orientation of the crystal axis is set to reduce the above-mentioned optical performance degradation due to the inherent birefringence in the invention on page 18 or 19 of the related patent application. The refraction member is disposed between the 曈 position on the most side of the second surface and the second surface in the projection optical system. Since the equiaxed crystal-based refractive member provided between the pupil position on the second-most surface side and the second surface in the projection optical system is susceptible to inherent birefringence shadowing, the present invention will apply for the 17th item in the scope of patent application. The correction method is suitable to be arranged between the pupil position on the second side and the second side, so as to reduce the influence of radiation. The invention according to item 21 of the present invention is the invention of any one of items 18 to 20 of the related application. The above-mentioned plurality of isometric crystal-based refractive members have: a -group light transmitting member, which is formed In order to make its crystal axis [100] or a crystal axis that is optically equivalent to the crystal axis [100] substantially coincide with the optical axis; and the first: a group light transmission member formed so that its crystallographer or optically The crystal axis equivalent to the crystal axis [100] is roughly consistent with the optical axis; and the above 12 paper sizes are applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 571344
述第一群光透射構件與上述第二群光透射構件具有以光軸 為中心而大致只相對地旋轉45。之位置關係。The first group of light-transmitting members and the second group of light-transmitting members have substantially 45 relative to each other with the optical axis as the center. Location relationship.
裝 本發明中請專利範圍第22項之發明係在有關中請專利範 圍第18至21項中任-項之發明中,上述複數個等轴晶系折 射構件具有.第三群光透射構件,其係形成為使其晶轴 [111]或光學上與該晶轴[1 i η成等效的晶軸與光軸大致相 符;以及第四群光透射構件,其係形成為使其晶軸 光學上與該晶軸[ill]成等效的晶軸與光軸大致相符;且上 述第三群光透射構件與上述第四群光透射構件具有以光軸 為中心而大致只相對地旋轉6 〇。之位置關係。 本發明申請專利範圍第23項之發明係在有關申請專利範 圍第18至22項中任一項之發明中,上述複數個等軸晶系折 射構件具有:第五群光透射構件,其係形成為使其晶軸 [110]或光學上與該晶軸[11 〇]成等效的晶軸與光軸大致相 符;以及第六群光透射構件,其係形成為使其晶軸[11〇]或 光學上與該晶軸[11 〇]成等效的晶軸與光軸大致相符;且上 述第五群光透射構件與上述第六群光透射構件具有以光軸 為中心而大致只相對地旋轉90。之位置關係。 本發明申請專利範圍第24項之發明係在有關申請專利範 圍第18至20項中任一項之發明中,上述複數個等軸晶系折 射構件具有:第一群光透射構件,其係形成為使其晶軸 [100]或光學上與遠晶轴[1〇〇]成等效的晶轴與光軸大致相 付,以及弟五群光透射構件,其係形成為使其晶轴[11 〇 ]或 光學上與該晶軸[11 〇]成等效的晶軸與光軸大致相符。 -13 - 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 571344 A7The invention according to claim 22 in the present invention is related to the invention in any one of claims 18 to 21 in the claimed invention, wherein the above-mentioned plurality of equiaxed crystal-based refractive members have a third group of light transmitting members, Its system is formed such that its crystal axis [111] or a crystal axis which is optically equivalent to this crystal axis [1 i η substantially coincides with the optical axis; and a fourth group of light transmitting members is formed such that its crystal axis The crystal axis which is optically equivalent to the crystal axis [ill] is approximately consistent with the optical axis; and the third group of light transmitting members and the fourth group of light transmitting members have the optical axis as the center and rotate relatively only relative to each other 6 〇. Location relationship. The invention according to claim 23 of the present invention is the invention according to any one of claims 18 to 22 of the related patent application, wherein the plurality of isometric crystal-based refractive members have: a fifth group of light transmitting members, which are formed In order to make its crystal axis [110] or a crystal axis that is optically equivalent to the crystal axis [11 〇] substantially coincide with the optical axis; and a sixth group of light transmitting members, it is formed such that its crystal axis [11〇 ] Or the crystal axis equivalent to the crystal axis [11 〇] and the optical axis are substantially consistent; and the fifth group of light transmitting members and the sixth group of light transmitting members have the optical axis as the center and are substantially only opposite to each other. Ground rotation 90. Location relationship. The invention according to claim 24 of the present invention is the invention according to any one of claims 18 to 20 of the related patent application, wherein the plurality of isometric crystal-based refractive members have: a first group of light transmitting members, which are formed In order to make its crystal axis [100] or a crystal axis that is optically equivalent to the distant crystal axis [100] and the optical axis substantially coincide, and the five-group light transmitting member, it is formed such that its crystal axis [ 11 〇] or a crystal axis that is optically equivalent to the crystal axis [11 〇] is approximately consistent with the optical axis. -13-This paper size applies to Chinese National Standard (CNS) A4 (210 X 297 mm) 571344 A7
^發明中請專利範㈣25項之發明係在有關中請專利範 圍弟24項〈發明中,上述複數個等軸晶系折射構件且 三群光透射構件’其係形成為使其晶軸[叫或光學;l與該 晶軸[111 ]成等效的晶軸與光轴大致相符。 本發明申請專利範圍第26項之發明係在有關申請專利範圍 第18至25項中任一項之發明中’以減少因上述固有雙折射 所引起上述光學性能退化之方式而設定有上述晶軸方位的 上述複數個等軸晶'系折射構件,係具有:第七群光透射構 件’其係形成為使特定的晶軸與光軸大致相符;以及第八 群光透射構件,其係形成為使特定的晶軸與光轴大致相符 ;且假設對應於上述投影光學系統之最大孔徑的光線通過 第七群光透射構件時之光程長(〇ptical path length# L7,對 應於上述投影光學系統之最大孔徑的光線通過第八群光透 射構件時之光程長為L8,上述特定的波長為又時,應滿足 下列條件式: |L7-L8|U<3 X 1〇+5 亦即本發明係加以界定欲藉使用複數個等軸晶系折射 構件而抵消互相的固有雙折射引起之負面影響時之最適當 的光程長。 本發明申請專利範圍第27項之發明係在有關申請專利範 圍第26項疋發明中,通過上述第七群及上述第八群光透射 構件之光線相對於光軸之角度最大值係超過20度。 本發明申請專利範圍第28項之發明係在有關申請專利範 圍第26或27項之發明中,上述第七群及上述第八群光透射 -14 - 571344 A7 B7 五、發明説明(12 構件係配置於上述投影光學系統中最上述第二面側的瞳位 置與上述第二面之間。 本發明t請專利範[|]第29項之發明係在有關申請專利範 圍第16至28項中任_項之發明中,更具有用以減少因上述 固^雙=射所引起光學性能退化中的標量成分之非球面。 一右依”、、本發明,則由於不僅是因固有雙折射所引起之偏 光成刀像差,連標量成分之像差亦能加以補正,因而可更 加確保良好的光學性能。 本發明申請專利範圍第3〇項之發明係在有關申請專利範 圍第29項之發明中,上述非球面係關於設有上述非球面折 射構件之光軸而具有回轉非對稱的形狀。 f發明申請專利範圍第31項之發明係在有關申請專利範 圍第16至3G項中任_項之發明中,上述非晶折射構件具有 應力雙折射分布。 :依照本發明,則可使用雙折射量容易控制的應力雙折 射刀布來補正等軸晶系結晶材料引起之雙折射影響。 ^發明申請專利範圍第32項之發明係在有關申請專利範 圍第31員之發明中’上述應力雙折射率分布係起因於製造 上述非晶性折射構件時因雜質、熱歷程造成之密度分布中 至少一方而生成。 t發明申請專利範圍第33項之發明係在有關申請專利範 :16至32项中任_項之發明中,上述非晶光學構石 英或摻雜有氟之石英。 本發明申請專利範圍第34項之發明係在有關申請專利範 15 10X297^) 裝 訂 線 571344 五、發明説明(13 圍弟16至33項之發明中,上述等幸由晶 化舞或氟化鋇。 7醫係具有鼠 為達成上述目的’本發明中請專利範圍第則之發 '、一種投影光學系統,其特徵為根據特定波長之光‘使第 :面之像成像於第二面上,且具有由對於上述特定= 光具有透射性《雙晶(twin)所構成之雙晶折射構件。 雙晶係指相接的同一相之兩個結晶在特定的共 = ? = :轉18°。之方位關係、,或相接的同-相“ :二關於特疋的結晶面而呈鏡像關係(image㈤川㈣叫) 〇。右^雙晶當作投影光學㈣中之結晶折射構件而使 7、’即可使雙折射影響在雙晶面或雙晶境界之前後互相變 、為朝相反方向’因而就結晶折射構件全體來說,即可 V因固有雙折射引起之光學性能退化 光學系統之光學性能。 在保缸〜 圍=中Γ利範園第36項之發明係在有關申請專利範 '尤Λ明中,上述雙晶折射構件之雙晶境界或雙晶 面係設定成可減少因上述雙晶所具有固有 學性能退化。 丨Κ尤 在本發明中,雙晶折射構件之雙晶境界或雙晶面之位置 ’應以能加以補正因上述雙晶所具有固有雙折射所引起光 學性能退化之位置為宜。 本發明申請專利範圍第37項之發明係在有關申請專利範 圍第16至36項中任-項之發明中’上述特定波長之波長為 200 nm以下之波長。 -16 本紙張尺度適用中國國家標準(CNS) A4規格(21〇χ297公釐) 571344^ 25 inventions in the patent scope of the invention are related to the scope of the 24 patents in the invention. <In the invention, the above-mentioned plurality of equiaxed crystal-based refractive members and three groups of light-transmitting members' are formed so that their crystal axes [called Or optical; l The crystal axis equivalent to the crystal axis [111] and the optical axis roughly match. The invention according to claim 26 of the present invention is the invention described in any one of claims 18 to 25 of the relevant patent scope. The crystal axis is set in such a manner as to reduce the degradation of the optical performance due to the inherent birefringence. The above-mentioned plurality of equiaxed crystals are a refractive member having a seventh group of light transmitting members which are formed so that a specific crystal axis substantially coincides with the optical axis; and an eighth group of light transmitting members which are formed as Make the specific crystal axis approximately coincide with the optical axis; and assuming that the light path length corresponding to the maximum aperture of the above-mentioned projection optical system passes through the seventh group of light transmitting members (〇ptical path length # L7, corresponding to the above-mentioned projection optical system) The maximum path length of the light with the largest aperture passing through the eighth group of light transmitting members is L8, and the above-mentioned specific wavelength is also required to satisfy the following conditional expression: | L7-L8 | U < 3 X 1〇 + 5 The invention is to define the most appropriate optical path length when using a plurality of equiaxed crystal-based refractive members to offset the negative effects caused by the mutual birefringence of each other. In the twenty-sixth invention of the scope of the related patent application, the maximum value of the angle of the light passing through the light transmitting members of the seventh group and the eighth group with respect to the optical axis is more than 20 degrees. The invention relates to the invention in the 26th or 27th of the scope of patent application. The seventh group and the eighth group are transmitted through the light. -14-571344 A7 B7 V. Description of the invention (12 components are arranged in the above-mentioned projection optical system. The position of the pupil on the second face side and the above-mentioned second face. The invention claims the invention of item 29 of the patent [|] is among the inventions of any of the 16th to 28th in the scope of the patent application, and has more It is used to reduce the aspheric surface of the scalar component in the degradation of optical performance caused by the above-mentioned solid birefringence. According to the present invention, the polarization aberration caused by not only the inherent birefringence, but also the The aberration of the scalar component can also be corrected, so that it can ensure better optical performance. The invention in the 30th invention in the scope of patent application of the present invention is the invention in the 29th scope of the patent application, and the aspheric surface is about the design The optical axis of the above-mentioned aspherical refractive member has a rotationally asymmetric shape. F The invention according to the 31st invention patent scope is the invention of any one of the 16th to 3G patent scopes, the above-mentioned amorphous refractive member It has a stress birefringence distribution. According to the present invention, a birefringent knife cloth with easily controlled birefringence can be used to correct the effect of birefringence caused by equiaxed crystal materials. ^ The 32nd invention patent In the invention of the 31st member of the scope of the patent application, the above-mentioned stress birefringence distribution is caused by at least one of the density distribution due to impurities and thermal history during the manufacture of the amorphous refractive member. The 33 inventions are among the invention patents of any of the 16 to 32 applications, the above-mentioned amorphous optical structure quartz or fluorine-doped quartz. The 34th invention of the scope of patent application of the present invention is related to the patent application range of 15 10X297 ^) gutter 571344 5. Description of the invention (13 16th to 33th inventions, the above is fortunately crystallized dance or barium fluoride .7 The medical department has a mouse to achieve the above-mentioned purpose, "the invention claims the scope of the patent," a projection optical system characterized in that the image of the first surface is imaged on the second surface according to light of a specific wavelength. And it has a double crystal refraction member composed of the above-mentioned specific = light transmissive twin crystal. Twin crystal refers to two crystals of the same phase that are connected to each other at a specific common =? =: Turn 18 °. Orientation relationship, or connected in-phase ": two mirror image relationship with respect to the crystal plane of the special ((image㈤ 川 ㈤) 0. The right ^ double crystal is used as the crystalline refractive member in the projection optical 使 and makes 7 , 'You can make the birefringence influence mutually change before and after the double crystal plane or the double crystal realm, to the opposite direction'. Therefore, for the entire crystalline refraction member, you can V degrade the optical performance due to the inherent birefringence of the optical system. Optical performance: In the cylinder ~ perimeter = medium The 36th invention of Γ 利范 园 is in the related patent application 'You 明 Ming, the double crystal boundary or the double crystal plane of the above-mentioned double crystal refraction member is set to reduce the inherent performance degradation due to the above-mentioned double crystal. 丨In particular, in the present invention, the position of the double crystal boundary or the double crystal plane of the birefringent member should be a position capable of correcting the degradation of the optical performance caused by the inherent birefringence of the above-mentioned twin crystal. The present invention applies for a patent The invention of the 37th scope is among the inventions of any of the 16th to 36th of the scope of the application for patents. The wavelength of the above-mentioned specific wavelength is a wavelength below 200 nm. -16 This paper applies the Chinese National Standard (CNS) A4 Specifications (21 × 297 mm) 571344
本發明申請專利範圍第38項之發明係一種投影曝光裝置 ,用以根據特定波長的光而使配置於第一面的投影原版之 像投〜曝光於配置在第二面之工件,其特徵為具有:用以 供應上述特足波長的光之光源;酉己置在該光源與上述第一 面間之光路中,用以使來自於上述光源之上述光導至上述 ,影原版之照明光學系統;以及配置在上述第一面與上述 f二面間之光路中,用以使上述投影原版之像形成於上述 第一面上之申請專利範圍第1 5至37項中任一項之投影光學 系統。 本發明申請專利範圍第39項之發明係一種投影曝光方法 ,其特徵為根據特定波長的光而使配置於第一面的投影原 版之像投影曝光於配置在第二面之工件,且具有:供應上 述特定波長的光之工序;使用上述特定波長的光而照明上 述投影原版之工序;以及根據來自於上述被照明之上述投 影原版之光,以申請專利範圍第15至37項中任一項之投影 光學系統使上述投影原版之像形成於上述第二面上之工序。 另在本發明中,所謂的第一群光透射構件與第二群光透 射構件具有以光軸為中心而大致只相對地回轉45。之位置 關係,係意味著以特定的晶軸(例如晶軸[〇1〇]、[〇〇丨]、⑴卜^ 、或[Oil])彼此之光軸為中心之相對的角度大致為45。。該 特定的晶軸係指朝向與第一群光透射構件及第二群光透射 構件4光軸不同方向之晶軸。此外若以晶軸[100]為光軸,則 由於以光軸為中心之雙折射影響之回轉非對稱性會以90。 之周期而出現,因此具有以光軸為中心而大致只相對地回 ____- 17 - 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公袭) 571344The invention of claim 38 in the scope of patent application of the present invention is a projection exposure device for projecting an image of a projection original arranged on a first side according to light of a specific wavelength to a workpiece arranged on a second side, and is characterized by: It has: a light source for supplying the above-mentioned light with a sufficient wavelength; it has been placed in the optical path between the light source and the first surface, so that the above-mentioned light from the above-mentioned light source is guided to the above-mentioned original optical optical system; And a projection optical system arranged in the optical path between the above-mentioned first surface and the above-mentioned f-two surfaces so as to form an image of the above-mentioned projection master on the above-mentioned first surface in any one of claims 15 to 37 . The invention in item 39 of the scope of patent application of the present invention is a projection exposure method, which is characterized by projecting and exposing an image of a projection original arranged on a first side to a workpiece arranged on a second side according to light of a specific wavelength, and having: A process of supplying light of the above-mentioned specific wavelength; a process of illuminating the above-mentioned projection original using the above-mentioned light of the specific wavelength; and applying any one of items 15 to 37 of the scope of patent application based on the light from the above-mentioned illuminated original of the projection The projection optical system is a step of forming an image of the projection original plate on the second surface. Further, in the present invention, the so-called first group of light transmitting members and the second group of light transmitting members have relative rotations of approximately 45 relative to the optical axis. The positional relationship means that the relative angle with respect to the optical axis of a specific crystal axis (for example, crystal axis [〇1〇], [〇〇 丨], ⑴ 卜 ^, or [Oil]) as the center is approximately 45 . . The specific crystal axis refers to a crystal axis that faces a different direction from the optical axis of the first group of light transmitting members and the second group of light transmitting members 4. In addition, if the crystal axis [100] is used as the optical axis, the rotational asymmetry due to the influence of birefringence centered on the optical axis will be 90. Appears on a periodic basis, so it has the optical axis as the center and returns only relatively relatively.
地回轉60。之位置關係日寺,其意思是與具有以光軸為中心 而大致,、相對地回轉6〇。+ (η χ 12〇。)之位置關係相同(η為 整數)。 A7 B7 轉45 置關係時,其意思是與具有以光軸為中心而大 致只相對地回棘4 ς。 评45 +(ηχ 90°)之位置關係相同(η為整數)。 另夕卜,在本私日日+ _ 、,、 鈇月中,所謂的罘三群光透射構件與第四群 光透t構件係以光軸為中心而大致只相對地回轉。之位 、、 系%、未著以特定的晶軸(例如晶軸[-111 ]、[ 11 -1] 、、或[+ ])彼此之光軸為中心之相對的角度大致為60。。 4特疋的日日軸係指朝向與第三群光透射構件及第四群光透 射構件《光軸不同方向之晶軸。此外若以晶軸[111]為光輕 ’則由於以光轴為中心之雙折射影響之回轉非對稱性會以 120之周/、月而出現,因此具有以光軸為中心而大致只相對 另外在本發明中,所謂的第五群光透射構件與第六群 光透射構件係以光軸為中心而大致只相對地旋轉90。之位 置關係,係意味著以特定的晶軸(例如晶軸[001]、卜丨丨丨]、 [-110])或[Ml])彼此之光軸為中心之相對的角度大致為9〇。 。汶特疋的日θ軸係指朝向與第五群光透射構件及第六群光 透射構件之光軸不同方向之晶軸。此外若以晶軸[丨丨〇]為光 軸,則由於以光軸為中心之雙折射影響之回轉非對稱性會 以180°之周期而出現,因此具有以光軸為中心而大致只相 對地回轉90。之位置關係時,其意思是與具有以光軸為中 心而大致只相對地回轉90。+ (nX 18〇。)之位置關係相同0 為整數)。 -18 - 度適用中國國家標準(CNS) A4規格(210X 297公Ground rotation 60. The positional relationship of Nichi-ji means that it has a rotation around 60 °, which is roughly centered around the optical axis. + (η χ 12〇.) has the same positional relationship (η is an integer). When A7 B7 turns 45, it means that it has a spine that is roughly opposite to the center of the optical axis. The positional relationship of 45 + (ηχ 90 °) is the same (η is an integer). In addition, in this private day + _, ,, and leap month, the so-called three-group light-transmitting members and the fourth group of light-transmitting t members are generally only relatively opposite to each other around the optical axis. The relative angles of the positions,, and% are not about 60, which are centered on the optical axis of a specific crystal axis (for example, the crystal axis [-111], [11 -1], or [+]). . The 4 special day-to-day axis refers to the crystal axis that is different from the light axis of the third group of light transmitting members and the fourth group of light transmitting members. In addition, if the crystal axis [111] is light, the rotation asymmetry of the birefringence effect with the optical axis as the center will appear at 120 weeks / months, so it has the optical axis as the center and is only relatively opposed. In the present invention, the so-called fifth group of light transmitting members and the sixth group of light transmitting members are rotated substantially relative to each other with the optical axis as the center. The positional relationship means that the relative angles around the optical axis of a specific crystal axis (such as crystal axis [001], Bu 丨 丨 丨], [-110]) or [Ml]) are approximately 9 °. . . The Sun's θ axis of Wentejing refers to a crystal axis facing a direction different from the optical axis of the fifth group of light transmitting members and the sixth group of light transmitting members. In addition, if the crystal axis [丨 丨 〇] is used as the optical axis, the rotation asymmetry of the birefringence effect with the optical axis as the center will appear at a period of 180 °, so it has the optical axis as the center and is only relatively opposed. Ground rotation 90. In the positional relationship, it means that it has a rotation of approximately 90 relative to the optical axis. + (nX 18〇.) has the same positional relationship (0 is an integer). -18-Degree applies to China National Standard (CNS) A4 specification (210X 297 male
裝 五 、發明説明( 16 ) [發明之實施形態] 之製I : 'I圖式Ϊ明本發明第-實施形態之投影光學系統 迕方:万/ ^詳加說明依本實施形態的投影光學系統製 明4 π 、里~ ’先就其概略參閱圖1扼要說 之;I:;1係顯示本發明第-實施形態之投影光學系統 < t k万法概略流程圖。 有.&斤丁本實犯形怨《投影光學系統之製造方法具 ;· §又計工㈣、結晶材料準備工序S2、晶軸測定工序S3 折射構件形成工序S4、以及組裝工序S5。 又冲工序S1,在使用光線追蹤軟體而進行投影光學系 計時,則使用複數個偏光成分之光線而實施投影光 :!統之光線追縱,算出在各自偏光成分下之像差,較佳 ^异出每-偏光成分之波前像差(wave_F_ ab咖i〇n)。 :然邊就按複數個偏域分各個之像差及複數個偏光成分 是《合成的標量成分之標量像差而執行投影光學系統之 坪估,邊使構成投影光學i统的複數個光學構件(折射構件 、反射構#、繞射構件等)之參數予以最佳化,以取得由這 些參數構成之設計數據。該參數除使用以往之光學構件之 面形狀、光學構件之面回隔、光學構件之折射率等外,光 學構件若為結晶材料則再加上以其晶軸方位作為參數而使 用0 在結晶材料準備工序S2,則準備對於供投影光學系統使 用的波長具有光透射性的等軸晶系(晶軸之單位長度互相相 同,且在各各晶軸交叉點的各晶軸所形成之角度全為9〇。 571344 五 、發明説明( 17 、口系)之結晶材料。 在晶輪;則定 備結晶材料之晶測定經由結晶材料準備工序所準 二直接方式測定晶轴方位之方法,:,(—測 :㈣而根據已知之晶輪方位:;折:::定結晶材料 T的雙折射而決定晶轴方位之、万:,之關係而由 備妥成工序S4,則將經由結晶材料準備工序準 計數牧mr(研旬成具有在設計工序所得參數(設 S3與折射二本實施形態中,晶轴測定工序 先,… 成工序S4之實施前後順序是任-方均可為 加工/以折射構件形成工序S4為先而實施時,則測定已 工序形狀之結晶材料晶軸即可,如以晶軸測定 折:ΐ:Γ "主晶軸方位之資訊,俾能識別經形成 折射構件後所測出的晶軸即可。 j、’且裝工序S5,則將經加工之折射構件按照由設計工序 所=設計數據而組裝於投影光學系統之鏡筒内。此時應使 由等軸晶系結晶材料所構成折射構件之晶軸,定位於能一 致於由設計工序所得設計數據中的晶軸方位之位置。 以上,就依本發明一實施形態之投影光學系統之製造方 法扼要加以說明,接著就其詳細步驟參閱圖2〜圖8說明如 下。 圖2係概略顯示設計工序s 1之流程圖。如圖2所示,設計 工序S 1具有·輸入設計參數的初始值之步驟s 11 ;根據設 -20 - 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公釐) 571344 A7Fifth, the description of the invention (16) [Implementation Mode of the Invention] System I: 'I scheme, which illustrates the projection optical system of the first embodiment of the present invention. Square: 10,000 / ^ A detailed description of the projection optics according to this embodiment. System description 4 π, li ~ 'For its outline, please refer to FIG. 1 briefly; I :; 1 is a schematic flowchart showing the projection optical system < Yes, there was a grudge against "The manufacturing method of projection optical system;" § a calculation process, a crystalline material preparation step S2, a crystal axis measurement step S3, a refractive member formation step S4, and an assembly step S5. In step S1, when the projection optical system is timed using ray tracing software, a plurality of polarized light components are used to implement the projected light:! The light is traced to calculate the aberrations under the respective polarized light components, preferably ^ The wavefront aberrations of the per-polarized component are outweighed (wave_F_abCain). : Then, according to the plural aberrations, each of the aberrations and the plurality of polarized components are "synthetic scalar aberrations of the synthesized scalar components, and perform the flat optical estimation of the projection optical system, while using the plurality of optical components constituting the projection optical system. (Refraction member, reflection structure #, diffraction member, etc.) parameters are optimized to obtain design data composed of these parameters. In addition to using the conventional surface shape of the optical component, the surface separation of the optical component, the refractive index of the optical component, etc., if the optical component is a crystalline material, plus its crystal axis orientation as a parameter, use 0 for the crystalline material. In the preparation step S2, an equiaxed crystal system having light transmittance for a wavelength used by the projection optical system is prepared (the unit lengths of the crystal axes are the same as each other, and the angles formed by the crystal axes at the intersections of the respective crystal axes are all 90. 571344 V. Description of the crystalline material of the invention (17, mouth system). In the crystal wheel, the crystal measurement of the crystalline material is prepared. The method of determining the orientation of the crystal axis through the crystalline material preparation process is two direct methods :, (— 测: And according to the known crystal wheel orientation :; fold ::: determine the biaxial refraction of the crystalline material T to determine the relationship between the crystal axis orientation and the ::, and prepare the process S4, it will go through the crystalline material preparation process. Counting mr (Yan Xuncheng has the parameters obtained in the design process (Let S3 and refraction in this embodiment, the crystal axis measurement process first, ... the order before and after the implementation of step S4 is either-can be In the case where the step S4 of the formation of the refractive member is performed first, the crystal axis of the crystalline material having the shape of the process may be measured. For example, if the crystal axis is used to measure the fold: ΐ: Γ " Information on the orientation of the main crystal axis, the The crystal axis measured after the refractive member is formed is sufficient. J, 'and the mounting step S5, the processed refractive member is assembled in the lens barrel of the projection optical system according to the design data obtained by the design process. At this time, it should be The crystal axis of the refractive member composed of the equiaxed crystal system crystal material is positioned at a position that can be consistent with the crystal axis orientation in the design data obtained by the design process. The above is the manufacture of the projection optical system according to an embodiment of the present invention. The method is briefly explained, and its detailed steps are described below with reference to Figs. 2 to 8. Fig. 2 is a flow chart schematically showing the design process s 1. As shown in Fig. 2, the design process S 1 has an initial value of input design parameters. Step s 11; According to setting -20-This paper size applies Chinese National Standard (CNS) A4 specification (210X 297 mm) 571344 A7
a :而斤估在複數個偏光成分下的投影光學系統光學性 =—驟^ ;判斷經在該步㈣2算出之光學性能是否在 疋:規袼内《步驟S13 ;以及經該步驟⑴後被判斷為 ^在預$規格内時則變更設計參數之步驟S14。 在本實施形態中’設計參數可使用諸如:構成投影光學 …无的光學構件(透鏡、反射面等)之面形狀、面間隔、偏 心量、相對於W之傾斜度、以光軸為中^之方位角、折 料、雙折射率分布、反射率、透射率、透射率分布、有 效徑、公差等,或形成在這些光學構件表面的薄膜結構、 即薄膜層數、各層厚度、以及各層材料(必要時也使用各層 之吸收係數)等。 接著,參閱圖3及圖4就在複數個偏光成分下評估投影光 學系統光學性能之步加說明如下。圖3係顯示投影 光學系統之光學性能評估點之一例子目,圖4係用以說明 步驟S12的詳細内容之流程圖。 如3圖所示,本實施形態係以作為投影光學系統孔之第 二面的像面W之光軸Αχ上之評估點W〇 ,與在像面冒的任意 像高(例如最周邊像高)之評估點Wi作為評估點。惟在像面 W的任意像高之評估點Wi並非局限於一點,也可使用複數 個任意像咼之評估點。另外入射於評估點w〇之成像光束係 對應於來自於作為投影光學系統第一面之物體面R上的光 軸Αχ上之點R0之光束,入射於評估點Wi之成像光束係對應 於來自於物體面R上的任意物體高之點…之光束。 〜 另外在步驟S12之複數個偏光成分,可使用例如在以投a: And estimate the optical properties of the projection optical system under a plurality of polarized light components =-^^; determine whether the optical performance calculated in step 2 is in: "step S13 in the rules; and after this step When it is judged that ^ is within the pre- $ specifications, step S14 of changing design parameters is performed. In this embodiment, the 'design parameters may use, for example, the surface shape, surface interval, eccentricity of the optical member (lens, reflecting surface, etc.) constituting the projection optics ... nothing, the inclination with respect to W, and the optical axis as the center ^ Azimuth, folding, birefringence distribution, reflectance, transmittance, transmittance distribution, effective diameter, tolerance, etc., or the film structure formed on the surface of these optical components, that is, the number of film layers, the thickness of each layer, and the material of each layer (If necessary, also use the absorption coefficient of each layer). Next, referring to FIG. 3 and FIG. 4, the steps for evaluating the optical performance of the projection optical system under a plurality of polarized light components are described as follows. FIG. 3 is an example of an optical performance evaluation point of the projection optical system, and FIG. 4 is a flowchart for explaining the details of step S12. As shown in FIG. 3, this embodiment uses an evaluation point W0 on the optical axis Ax of the image plane W as the second surface of the projection optical system aperture, and an arbitrary image height (for example, the highest peripheral image height) on the image plane. The evaluation point Wi is used as the evaluation point. However, the evaluation point Wi of an arbitrary image height on the image plane W is not limited to one point, and a plurality of evaluation points of an arbitrary image frame may be used. In addition, the imaging light beam incident on the evaluation point w0 corresponds to the light beam from the point R0 on the optical axis Ax on the object plane R as the first surface of the projection optical system, and the imaging light beam incident on the evaluation point Wi corresponds to the light from Beams at the height of any object on the object surface R ... ~ In addition, the plurality of polarizing components in step S12 can be used, for example, in
裝 玎 警 -21 - A7 B7 、發明説明(19 ) 影光學系統之光軸為法線之面内向特定的Χ方向振動的χ偏 光成刀,與在上述面内向與X方向成正交的γ方向振動的γ 偏光成分。此外複數個偏光成分也可使用在以上述光軸為 =線之面内向含有光軸的方向(放射方向R)振動的R偏光成 刀,與具有與該R偏光成分成正交的振動方向之β偏光成分 (具有向切向方向0的振動方向之偏光成分),也可使用上 述ΧΥ偏光成分及R0偏光成分雙方(亦即,四個偏光成分)。 然後在本實施形態則就複數個偏光成分之各個而求出在 投影光學系統PL的射出瞳PS之相位分布w〇 (p、0)(wi 、$)),惟該分布係將相位分布在射出瞳面PS上以極座標Μ 0)表示者。其中Ρ為將射出瞳面pig之半徑規格化成為1之 規格化瞳半徑,而0為射出瞳面pS之中心,典型的是以光 軸為原點的極座標之矢徑角。 (步驟S121) 在步驟S121,則將投影光學系統pl之設計參數輸入於電 子計算機。該設計參數,若該步驟S121係緊接著圖2之步 驟S11而實施,則充當為於步驟S1丨輸入的設計參數之初始 值’若該步驟S121係在圖2之步驟S 14之後才實施,則充當 為經在步驟S14變更後之設計參數。 按上述設計參數,在先就由投影光學系統PL之物體側(標 線片面R側)導入之各光線實施光線追蹤而求出這些各光線 在物體面(晶圓面W)之複(complex)振幅上是必要之資訊。 (步驟S122) -接著,電子計算機就進行光線追蹤,算出入射於如圖2 571344 A7 B7 五、發明説明(2〇 ) 所示任意評估對象像點Xi (例如最周邊像高)之成像光束的 第一偏光方向相位分布WHi (P、0)及第二偏光方向相位分 布WVi (p、0),與入射於光軸上之評估像點Xi之成像光束 的第一偏光方向相位分布WHO ( p、0)及第二偏光方向相位 分布 WV0 (ρ、Θ)。 按在此所謂的「第一偏光方向」及「第二偏光方向」係 在射出瞳面PS上互相成正交的兩個偏光方向,例如可適用 上述XY偏光方向、R0偏光方向、或XY及R0偏光方向雙方。 在本實施形態中,算出這些相位分布時應求出的複振幅 ,不只是針對於投影光學系統PL之射出瞳面PS的端部而言 ,而係包括射出瞳面PS之全域,因此如圖3所示入射於評 估對象像點Xi的成像光束之光線追蹤,則就由Xi上之共軛 點Ri射出的光束LFi中以互異的射出角度射出而會通過射出 瞳面PS之互異位置之各光線,分別實施(另外,應加以光 線追蹤之光線的最大射出角度係視投影光學系統PL之像側 數值孔徑(numerical aperture)而定。)。 另外在本實施形態,雖對於由具有固有雙折射之等軸晶 系結晶材料構成之光學構件而實施光線追蹤,但關於對於 像這樣的光學構件晶軸之雙折射分布方面,則曾在2001年 5月15日舉行之有關1 57 nm微影術之第二國際討論會(2nd International Symposium on 1 57 nm Lithography)上已由美國 NIST (National Institute of Standards and Technology)之約翰 伯内特及其他(John H. Burnett et al.)所揭露。 因而經由像這樣的光線追蹤即可取得光束Lfi在投影光學 -23 - 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 571344 A7 B7 五、發明説明(21 ) 系統PL的射出瞳面PS之第一偏光方向複振幅分布、及第二 偏光方向複振幅分布,並由這些分布即可分別求出第一偏 光方向相位分布、及第二偏光方向相位分布,而分別使以 射出瞳面PS上之極座標(p、0)表示這些分布者作為入射於 評估對象像點Xi的成像光束之第一偏光方向相位分布WHi ( P、0)、及第二偏光方向相位分布W Vi ( p、0)。其中p為 將射出瞳面PS之半徑規格化成為1之規格化瞳半徑,而$為 以射出瞳面P S之中心為原點的極座標之矢徑角。 另外,入射於中心像高X0的成像光束之光線追縱,也同 樣地就由X0之共軛點R0射出之光束LfO中以互異的射出角 度射出而會通過射出瞳面PS之互異的位置之各光線,分別 實施。並且求出光束LH之第一偏光方向複振幅分布、及第 二偏光方向複振幅分布,而分別使以射出瞳面PS上之極座 標(P、0)表示這些分布者作為入射於中心像高X0的成像光 束之第一偏光方向相位分布WHO (ρ、θ)、及第二偏光方向 相位分布WVO (ρ、0)。 (步驟S123) 接著,電子計算機即以下式(1)、(2)求出評估對象像點Xi 之平均相位分布WAi (p、0)、與中心像高X0之平均相位分 布 WAO (p、0) 〇 (1) WAi (ρ > θ)= (WVi (p > 0)+WHi (p ^ θ))/2 (2) WAO (p、θ)= (WVO (p、0)+WHO (p、0))/2 亦即,平均相位分布WAi (p、0)係使WVi (p、0)與WVO (P、Θ)之座標一致而得之中間值分布。 _ - 24 - 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 571344 22 發明説明 然後求出經求得的平均相位分布WAi (p、0)、WAO (p、 )各自之RMS值(均方根值)wai、waO。這些RMS值係相當 於投影光學系統PL之波面像差。 (步驟S124) 接著’電子計算機即將參照在步驟s丨22求得之WVi ( p、 0 )、WHi (p、0 )、wv〇 (p、0 )、WH〇 (p0 )而以下式 (3)(4)求出評估對象像點χί之延遲(retardati〇n)分布謂心、 Θ)、與光軸上之評估像點χ〇之延遲分布δψ〇 、0)。 (3) 5Wi (p > 0)=wVi (p > 0).WHi (p ^ Θ) (4) 5W0 (p、0)=wv〇 (p、0)-WHO (p、0) 亦即’延遲分布5Wi (p、0)乃是將WVi (p、0)與WVi (p 、⑴之座標一致而得之差分分布,而延遲分布δ W〇 ( p、0) 係使WVO (p、0)與Wv〇 (p、0)之座標一致而得之差分分 接著’求出經求得的延遲分WSWi (p、0)、δλνο (P、0) 各自之RMS值3wi、δ\νΟ。 一般而言’延遲若為大,圖案像之對比會下降,因而上 述延遲分布5Wi (Ρ、0)之RMS值及延遲分布5W0 (ρ、0)之 RMS值’正在表示著在評估對象像點之像對比及在光軸上 評估像點之像對比的不良情形。 (步驟S125) 電子計算機即將參照在步驟S124所求得延遲分布5 WO而 求出其RMS值5W0、及其射出瞳面内平均值a [δλ¥0],並以 下式(5)求出PSF (點擴散函數)值: L___ - 25 _ 本紙張尺度適用中國國家標準(CNS) Α4規格(210 X 297公憂)Decoration Police-21-A7 B7, Description of the Invention (19) The X-polarized light that oscillates in a specific X direction in a plane where the optical axis of the shadow optical system is normal, and γ that is orthogonal to the X direction in the plane Directional γ-polarized light component. In addition, a plurality of polarized light components can also be used. The R polarized light knife that vibrates in a direction containing the optical axis (radiation direction R) in a plane where the optical axis is a line, and the polarized light component has a vibration direction orthogonal to the R polarized light component. As the β polarization component (a polarization component having a vibration direction of 0 in the tangential direction), it is also possible to use both the XY polarization component and the R0 polarization component (that is, four polarization components). Then, in this embodiment, the phase distribution w0 (p, 0) (wi, $) of the exit pupil PS of the projection optical system PL is obtained for each of the plurality of polarized light components, but the distribution is the phase distribution at The exit pupil plane PS is represented by polar coordinates M 0). Among them, P is a normalized pupil radius normalizing the radius of the exit pupil plane pig to 1, and 0 is the center of the exit pupil plane pS, typically the sagittal angle of the polar coordinates with the optical axis as the origin. (Step S121) In step S121, the design parameters of the projection optical system pl are input to the computer. The design parameter, if the step S121 is implemented immediately after the step S11 of FIG. 2, serves as an initial value of the design parameter input for the step S1 丨 if the step S121 is implemented after the step S 14 of FIG. 2, It serves as the design parameter after the change in step S14. According to the above design parameters, the light rays introduced from the object side (the reticle surface R side) of the projection optical system PL are first ray traced to obtain the complex of these light rays on the object surface (wafer surface W). The necessary information is in amplitude. (Step S122)-Next, the electronic computer performs ray tracing and calculates the incidence of the imaging beam incident on the arbitrary evaluation target image point Xi (for example, the highest peripheral image height) as shown in Figure 2 571344 A7 B7 V. Invention Description (2). The first polarization direction phase distribution WHi (P, 0) and the second polarization direction phase distribution WVi (p, 0) and the first polarization direction phase distribution WHO (p , 0) and the second polarization direction phase distribution WV0 (ρ, Θ). The so-called "first polarization direction" and "second polarization direction" are two polarization directions orthogonal to each other on the exit pupil plane PS. For example, the above-mentioned XY polarization direction, R0 polarization direction, or XY and R0 polarized in both directions. In this embodiment, the complex amplitudes to be obtained when calculating these phase distributions are not only for the end of the exit pupil plane PS of the projection optical system PL, but also include the entire domain of the exit pupil plane PS. The ray tracing of the imaging beam incident on the image point Xi of the evaluation target shown in Fig. 3 is that the beam LFi emitted from the conjugate point Ri on Xi is emitted at different exit angles and passes through the different positions of the pupil plane PS. Each of the rays is implemented separately (in addition, the maximum exit angle of the rays to be ray traced depends on the numerical aperture of the image side of the projection optical system PL). In this embodiment, although ray tracing is performed on an optical member made of an equiaxed crystal system crystal material with inherent birefringence, the birefringence distribution of the crystal axis of an optical member such as this was previously described in 2001. The 2nd International Symposium on 1 57 nm Lithography, held on May 15th, was performed by John Burnett of the National Institute of Standards and Technology (NIST) and others ( John H. Burnett et al.). Therefore, the light beam Lfi can be obtained through ray tracing like this in projection optics-23-This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) 571344 A7 B7 V. Description of the invention (21) The exit pupil of the system PL The first polarization direction complex amplitude distribution and the second polarization direction complex amplitude distribution of the plane PS. From these distributions, the first polarization direction phase distribution and the second polarization direction phase distribution can be obtained respectively, and the exit pupils are respectively The polar coordinates (p, 0) on the plane PS represent the first polarization direction phase distribution WHi (P, 0) and the second polarization direction phase distribution W Vi (p) of these distributors as the imaging beam incident on the evaluation target image point Xi. , 0). Where p is the normalized pupil radius normalizing the radius of the exit pupil plane PS to 1, and $ is the sagittal angle of the polar coordinates with the center of the exit pupil plane PS as the origin. In addition, the ray tracing of the imaging beam incident on the central image height X0 is similarly emitted from the light beam LfO emitted from the conjugate point R0 of X0 at different exit angles, and will pass through the exit pupil plane PS. Each light at the position is implemented separately. The complex amplitude distribution of the first polarization direction and the complex amplitude distribution of the second polarization direction of the light beam LH are obtained, and these distributions are represented by polar coordinates (P, 0) on the exit pupil plane PS as incident central image height X0. The first polarization direction phase distribution WHO (ρ, θ) and the second polarization direction phase distribution WVO (ρ, 0) of the imaging beam of. (Step S123) Next, the electronic computer calculates the average phase distribution WAi (p, 0) of the evaluation target image point Xi and the average phase distribution WAO (p, 0) of the center image height X0 by the following equations (1) and (2). ) 〇 (1) WAi (ρ > θ) = (WVi (p > 0) + WHi (p ^ θ)) / 2 (2) WAO (p, θ) = (WVO (p, 0) + WHO (p, 0)) / 2 That is, the average phase distribution WAi (p, 0) is an intermediate value distribution obtained by aligning the coordinates of WVi (p, 0) and WVO (P, Θ). _-24-This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 571344 22 Description of the invention and then the average phase distributions WAi (p, 0) and WAO (p,) obtained are obtained RMS value (root mean square value) wai, waO. These RMS values are equivalent to wavefront aberrations of the projection optical system PL. (Step S124) Next, the electronic computer is about to refer to WVi (p, 0), WHi (p, 0), wv0 (p, 0), WH0 (p0) obtained in step s22 and the following formula (3 ) (4) Obtain the retardation (retardation) distribution of the evaluation target image point χί, θ), and the retardation distribution δψ0, 0) from the evaluation image point χ0 on the optical axis. (3) 5Wi (p > 0) = wVi (p > 0) .WHi (p ^ Θ) (4) 5W0 (p, 0) = wv〇 (p, 0) -WHO (p, 0) also That is, the delay distribution 5Wi (p, 0) is a differential distribution obtained by matching the coordinates of WVi (p, 0) and WVi (p, ⑴), and the delay distribution δ W0 (p, 0) is the WVO (p , 0) Differential scores obtained by matching the coordinates of Wv0 (p, 0). Then, 'require the obtained delay scores WSWi (p, 0), δλνο (P, 0) and the respective RMS values of 3wi, δ \ νΟ. Generally speaking, if the delay is large, the contrast of the pattern image will decrease, so the RMS value of the delay distribution 5Wi (P, 0) and the RMS value of the delay distribution 5W0 (ρ, 0) are indicating that the evaluation target is being evaluated. Defects of image point image contrast and evaluation of image point image contrast on the optical axis. (Step S125) The electronic computer is about to calculate its RMS value 5W0 and its exit pupil with reference to the delay profile 5 WO obtained in step S124. The in-plane average value a [δλ ¥ 0], and the PSF (point spread function) value is calculated by the following formula (5): L___-25 _ This paper size applies the Chinese National Standard (CNS) Α4 specification (210 X 297)
裝 訂Binding
線 571344 A7 __________ Ϊ、發明説明(23 ) (5) PSF= 1-(4 7Γ 2 · 6w02 + 2 7Γ 2 · Α [δWO] 2)/2 該PSF值相當於因延遲產生的點像強度分布最大值之概 略值。該PSF值愈小表示點像強度分布愈退化。 此外,在本實施形態,也可加上於上述經取得wai、 之各個而取得如下列(a)、(b)、(c)之評估指標。 (a) 使WAi ( p、0)加以澤爾尼克(Zernicke)展開所得各項 之RMS值,或/及其澤爾尼克展開所得複數個項加以群組化 所得各項之RMS值。 (b) 使WAO (p、0)加以澤爾尼克展開所得各項之111^3值, 或/及其澤爾尼克展開所得複數個項加以群組化所得各項之 RMS 值。 ' (c) 以光軸上之評估像點χ〇為基準的評估對象像點沿之平 均相位分布AWAi (ρ、Θ)或/及該平均相位分布占界八丨之 RMS值。 (d) 使AWAi (p、加以澤爾尼克展開所得各項之尺…^值 或/及其澤爾尼克展開所得複數個項加以群組化所得各項 之RMS值。 、 根據如上述經以步驟S12算出之光學性能(例如平均相位 分布、延遲分布、這些之RMS值、PSF值等),在步驟S13則 加以判斷經算出的光學性能是否在於特定的規格内。若在 於規格内,則輸出設計數據(設計參數),然後結束設計工 序S 1丨隹經算出之光學性能若非在於特定的規格内,則將 控制移至步驟s 14。 在步驟S14,則變更投影光學系統設計參數之至少一部 -26 -Line 571344 A7 __________ 发明, description of the invention (23) (5) PSF = 1- (4 7Γ 2 · 6w02 + 2 7Γ 2 · Α [δWO] 2) / 2 This PSF value is equivalent to the point image intensity distribution due to the delay The approximate value of the maximum value. The smaller the PSF value, the more the point image intensity distribution is degraded. In addition, in this embodiment, it is also possible to obtain the following evaluation indicators (a), (b), and (c) by adding to each of the above-mentioned obtained wai. (a) Make WAi (p, 0) the RMS value of each item obtained by Zernicke expansion, or / and group the plurality of items obtained by Zernick expansion to group the RMS values of each item. (b) Make WAO (p, 0) the 111 ^ 3 value of each item obtained by Zernike expansion, or / and the RMS value of each item obtained by grouping the Zernike expansion. (c) The average phase distribution AWAi (ρ, Θ) along the evaluation target image point based on the evaluation image point χ0 on the optical axis or / and the RMS value of the average phase distribution occupies eight. (d) AWAi (p, the scale of the items obtained by Zernike expansion ... ^ value or / and the RMS values of the items obtained by grouping the plurality of items obtained by Zernike expansion. The optical performance calculated in step S12 (such as the average phase distribution, the delay distribution, the RMS value, and the PSF value of these). In step S13, it is determined whether the calculated optical performance is within a specific specification. If it is within the specification, the output Design data (design parameters), and then end the design process S1. If the calculated optical performance is not within a specific specification, control is moved to step s 14. At step S14, at least one of the design parameters of the projection optical system is changed. Part-26-
571344 A7571344 A7
分後將控制移至步驟S12。在本實施形態則反覆進行該猶 環直至經算出之光學性能相特定的規格内為止。 另外在進仃變更設計參數時,也可採取最初則只變更諸 如構成投影光學系統的光學構件(透鏡、反射面等)之面形 狀、_面間㉟、“量、相對於光軸的傾斜度、折射率、有 效控、公差等由非晶材料構成之光學系統所具有之參數, 而補正投影光學系統之光學性能中的標量成分之像差,之 後’則變更薄膜結構、光學構件之雙折射率分布'以光轴 為中心之方位角等參數,而補正標量成分像差及偏光 之像差的方法。 例如,對於等軸晶系之結晶材料使用榮石(氣化轉·After the division, control is shifted to step S12. In this embodiment, this loop is repeatedly performed until the calculated optical performance is within a specific specification. In addition, when changing the design parameters, it is also possible to initially change only the surface shape of the optical components (lens, reflecting surface, etc.) constituting the projection optical system, the _plane interval, the "amount, the inclination with respect to the optical axis" , Refractive index, effective control, tolerance and other parameters of an optical system composed of amorphous materials, and correct the aberration of the scalar component in the optical performance of the projection optical system, and then change the birefringence of the thin film structure and optical components The rate distribution is based on the azimuth and other parameters with the optical axis as the center, and the method of correcting scalar component aberration and aberration of polarized light.
CaF2)之場合而言,由於一向是以螢石形成以晶軸口 與認晶軸[U1]等效的晶轴為光軸之折射構件,因而愈 他晶軸為光軸之情況相比累積了不少形成折射構件所 需之生產技術。因此進行投影光學系統之設計時,舉 例子,可採取使投影光學系射由螢石構成的光學構= 光軸-致於晶师η]之狀態下進行設計,而由該螢石 的光學構件之,"十參數則採用以光軸^中心的方位角θ 之方式。 2 如上所述,在設計工序S1,即可獲得具有計算上 學性能在於特定規格内的投影光學系統之& 几< 5又叶數據(設計東 數:諸如構成投影光學系統的光學構件 、 (遷說、反射面等、 之面形狀、面間隔、偏心量、相對於光軸的倾斜度、以一 軸為中心的方位角、折射率、雙折射率、^ 以光 W、反射率、透 -27 - 本纸張尺度適用中國國家標準(CNS) A4規格(210 X 297公爱ί 571344 A7 B7 發明説明 射率透射率分布、有效徑、公差等,或形成在這些光學構 件表面的薄膜結構,即薄膜層數、各層厚度、各層材料(必 要時再加上各層吸收係數)等)。 接著,就結晶材料準備工序S2參閱圖6之流程圖說明如 下。圖6係顯示結晶材料準備工序S2之詳細流程圖,其係 ,以準備對於供投影光學系統使用的波長具有光透射性的 等軸曰曰系之結晶材料。像這樣的等軸晶系之結晶材料,有 勞石(氟化鈣;CaFO或氟化鋇(BaF2)可供使用。 以下 < 說明則以螢石作為等軸晶系結晶材料而適用之情 况為例加以說明。 (步驟S21) 在步驟S2i,則實施使粉末原料進行脫氧化反應之預處 理。右以布里奇曼法(Bridgman pr〇cess)生長供在紫外線領 $或真2紫外線領域使用之螢石單晶,一般則使用由人工 石成而成之南純度原料。並且由於若只溶化單一 $晶化時必有會起白濁而失透之傾向,因而一向是採取加 添淨化劑而加熱以防止白濁之措施。可供使用於螢石單晶 足預處理或形成之代表性淨化劑為氟化鉛(pbF2)。按具有 會與含在原料中雜質起化學反應而使之除去之作用的添加 物質,一般稱此為淨化劑。在本實施形態中之預處理,首 先則將淨化劑加進於高純度的粉末原料並使之充分混人。 然後加熱升溫至淨化劑融點以上且未滿螢石之融點溫度, 藉此使其起脫氧化反應。 & 之後,也可直接使其降溫至室溫而作成燒結體,或是也In the case of CaF2), fluorite has always been used to form refracting members with the crystal axis opening and the crystal axis equivalent to the crystal recognition axis [U1] as the optical axis. Therefore, it is accumulated when the crystal axis is the optical axis. Many production techniques are required to form refractive members. Therefore, when designing a projection optical system, for example, it can be designed in a state where the projection optical system emits optical structure composed of fluorite = optical axis-due to crystal master η], and the optical component of the fluorite In other words, the " ten parameter uses the azimuth angle θ centered on the optical axis ^. 2 As mentioned above, in the design process S1, & several < 5 > data of a projection optical system having computational school performance within a specific specification can be obtained (design east numbers: such as the optical components constituting the projection optical system, ( Surface, shape, interval, eccentricity, inclination with respect to the optical axis, azimuth with one axis as the center, refractive index, birefringence, light W, reflectance, transmission- 27-This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 Public Love 571344 A7 B7) Description of the invention Emissivity transmittance distribution, effective diameter, tolerance, etc., or the film structure formed on the surface of these optical components, That is, the number of film layers, the thickness of each layer, the material of each layer (plus the absorption coefficient of each layer if necessary), etc. Next, the crystalline material preparation step S2 is described below with reference to the flowchart of FIG. 6. FIG. 6 shows the crystalline material preparation step S2. A detailed flow chart for preparing an equiaxed crystal material having a light transmittance at a wavelength for use in a projection optical system. An equiaxed crystal material such as this There are laurels (calcium fluoride; CaFO or barium fluoride (BaF2)). The following < explained the case where fluorite is used as an equiaxed crystal material as an example. (Step S21) In step S2i The pre-treatment for deoxidizing the powder raw material is carried out. The right side is grown by the Bridgman method for the fluorite single crystal used in the ultraviolet or $ 2 ultraviolet field. Generally, artificial South-purity raw materials made of stone. And if it melts only a single crystal, it will tend to become cloudy and devitrified, so it has always been taken to add a cleaning agent and heat to prevent white turbidity. It can be used in fluorescent The representative purifying agent for the pretreatment or formation of stone monocrystalline feet is lead fluoride (pbF2). It is generally called a purifying agent according to the added substances that can react with the impurities contained in the raw material to remove it. In the pretreatment in this embodiment, firstly, the detergent is added to a high-purity powder raw material and mixed thoroughly. Then, the temperature is raised to a temperature above the melting point of the detergent and less than the melting point of the fluorite. Make it After deoxidation reaction. &Amp; After that, it can be directly cooled to room temperature to make a sintered body, or
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線 -28 - 571344 -29 - 發明説明(26 可再加以升溫而使原料暫且融化後,降溫至室溫以作成多 晶體。以下則將依如上述方式施予脫氧化反應而成之燒結 體或多晶體稱為預處理品。 (步驟S22) 接著,在步驟S22則用該預處理品再使其進行結晶生長 以製得單晶鍵(ingot)。 結晶生長之方法,已知大致可分成為融液固化法、由溶 硬的析出法、由氣體的析出法、固體粒子成長法,惟在本 實施形態則以垂直布里奇曼法實施結晶生長。 首先將預處理品收容於容器而設置於垂直布里奇曼裝置 (結晶生長爐)内之特定的位置。之後加熱收容在容器内之 預處理,使之融化。溫度到達預處理品之融點後,經過 特定時間後即將開始晶化。俟所有的融液晶化後慢慢地冷 卻至室溫而以錠之形態取出。 (步驟S23) 在步驟S23則將錠切斷成大小•形狀大致與將在後述折 射構件形成工序S4所要製得的光學構件相同程度之圓盤 (disc)材料此時將在後述折射構件形成工序%所欲製得的 光學構件若為透鏡,則應使圓盤材料之形狀形成為圓柱形 幻吏圓柱形狀的圓盤材料之口徑與厚度,配合透鏡之 有效徑(外徑)及光軸方向之厚度而決定。 (步驟S24) 在步驟S24則對於經由登石里q a ^ 與赏石早卵錠切出之圓盤材料實 退火處理。經實施這此步驟 、一 7%S21〜S24即可製得由螢石單 本紙張γ㈤料賴CNS) A4_2ig^^Line-28-571344 -29-Description of the invention (26 The temperature can be further increased to temporarily melt the raw materials, and then cooled to room temperature to form polycrystals. The sintered body formed by the deoxidation reaction as described above or The polycrystal is called a pretreatment product. (Step S22) Next, in step S22, the pretreatment product is used for crystal growth to obtain a single crystal bond (ingot). The method of crystal growth is known to be roughly divided into Melt solidification method, precipitation method by solid solution, precipitation method by gas, solid particle growth method, but in this embodiment, the crystal growth is performed by the vertical Bridgman method. First, the pretreated product is housed in a container and installed At a specific position in the vertical Bridgman device (crystal growth furnace). Then heat the pretreatment contained in the container to melt it. After the temperature reaches the melting point of the pretreatment product, crystallization will begin soon after a certain time俟 After melting, all the liquid crystals are slowly cooled to room temperature and taken out in the form of an ingot. (Step S23) In step S23, the ingot is cut into a size and shape approximately the same as those in the refractive member forming step S4 described later. The disc material of the same degree of the optical member to be produced will be formed in the refractive member forming process described later. If the optical member to be produced is a lens, the shape of the disc material should be formed into a cylindrical shape. The diameter and thickness of the cylindrical disc material are determined in accordance with the effective diameter (outer diameter) of the lens and the thickness in the direction of the optical axis. (Step S24) In step S24, the Qa ^ and Dingshi early ovules passed through Dengshili The cut disc material is actually annealed. After implementing this step, a 7% S21 ~ S24 can be made from a fluorite single paper γ material (CNS) A4_2ig ^^
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線 571344 A7Line 571344 A7
構成之結晶材料。 接著’就晶軸測定工库 則實施經由結如下。在晶軸料工序S3 測定。此時可採取亩i、、備=序S2準備之結晶材料的晶軸之 法又折射而間接地決定晶軸方位之第二測定 _ 一、〃、矣測疋晶軸方位之第一測定法說明如下。 之C係使用x線結晶解析法而直接測定結晶材料 …印…,進而測定晶軸。此種測定法例如有一種勞厄 (La目ue丄法已為眾所周知。以下以適用勞厄法之情況作為第 測疋法並參閱圖7扼要說明如下。圖7係概略 像機之圖。 僻 如圖7所示,供用於實現依勞厄法的晶軸測定之勞厄攝 像機,具有:X線源100,用以將來自於該父線源1〇〇之乂線 101導至作為試樣的結晶材料103之平行光管(collimator) 102 ’以及供由自結晶材料103繞射的繞射X線1〇4曝光的X 線光敏構件1 〇5。其中,在圖7中雖未加以圖示,但在穿通 X線光敏構件1〇5的平行光管1〇2内部卻設有相對的一對狹 縫(slit)。 在第一測定法,首先則將X線1 〇 1照射於經在結晶材料準 備工序S2所準備之結晶材料1〇3,俾由該結晶材料103產生 繞射X線104。並且以該繞射X線104曝光配置在結晶材料 103的X線入射側之X線軟片或成像板(imaging plate)等X線 光敏構件105,以使對應於結晶結構的圖案之可視像(繞射 像)形成於該X線光敏構件105上。該繞射像(勞厄圖形),結 -30 - 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公釐) 571344 五 、發明説明( 28 晶材料為單晶時將呈 W)。在太音、, 狀’因此將之稱謂勞厄斑(LaUe 為已知,因此解折今婆厂、 才科4勞石且其結晶結構 解析Θ勞厄斑當可明暸处曰曰 另外以直接方式測定晶軸之第一曰…軸万位。 厄法,也可使用諸如··、毐蚀法’並非局限於勞 . * 邊使結晶作回轉或振動邊昭朝· X结 ' «^^(Weissenberg 材:劈ηΉ me—"1)等其他X線結晶解析法、或利用結晶 出現於二曰:ΓΓ直接觀察對結晶材料施加塑性變形所 =械;材:表面而具有特有形狀之壓像峨 接著’就藉測^結晶材料之雙折射而間接地決定晶轴方 位之第二測定法扼要說明如下。在第二測定法,則首先使 、’口日日材料之日日軸方位與在其方位下的雙折射量間之關係相 對應起來。此時應藉上述第一㈣法而測定結晶材料試樣 工晶軸方位。然後就結晶材料試樣之複數個晶軸各個進行 雙折射之測定。 圖8係顯示雙折射測定機之概略結構圖◊圖8中,來自於 光源110之光係由偏光子11丨變換成具有自水平方向(χ方向) 只傾斜7Γ /4的振動面之直線偏光。然後該直線偏光就受到 光彈性調變器112之相位調變而照射於結晶材料試樣1 13。 亦即,使相位有變化的直線偏光入射於結晶材料試樣丨i 3 。透射過結晶材料試樣113之光就被導入於檢光子114,使 得只在水平方向(X方向)具有振動面之偏光,透射過檢光子 114而以光檢測器115加以檢測。 -31 - '本紙張尺度適用中國國家標準(CNS) A4規格(21〇x 297公產) 571344 A7 _____ B7 五、發明説明(29 ) 因光彈性調變器1 12而產生之特定的相位延遲時,邊使 相位延遲量變化邊測定究竟有多少光量可由光檢測器u 5 檢測到,即可求得遲相(相位延遲;phase delay)軸之方向與 其折射率、及在進相(相位超前;phase lead)軸之折射率。 按試樣中若有雙折射存在,則因折射率之差而通過該試 樣的振動面(偏光面)所正交的兩直線偏光之光的相位必會 變化。亦即相對於一方的偏光,另一方的偏光之相位必會超 前或延遲,因而以下則將相位會超前之一方的偏光方向稱 謂進相軸,而相位會延遲之一方的偏光方向稱謂遲相軸。 在本貫施形態’則就晶軸方位經由上述第一測定法而已 成為既知之結晶材料試樣之每一晶軸,實施雙折射測定, 並使結晶材料之晶軸方位與在其方位的雙折射量間之關係 相對應起來。此時,應測定之結晶材料晶軸,除諸如[1〇〇] [1 1 0]、及[111 ]之代表性晶軸外,也可為[1 12]、[2 1 〇]、 及[211]等晶軸(按晶軸[〇1〇]、[001]係與上述晶軸[1〇〇]成 等效之晶軸,而晶軸[〇 11 ]、[ 1 〇 1 ]係與上述晶軸[丨丨〇]成等 效之晶軸)。至於位於經予測定之晶軸的中間之晶軸,也可 使用特定之插補(interpolate)運算式而插補。 在適用了第一測定法之晶軸測定工序S3,則使用圖8所 示雙折射測疋機,執行經由結晶材料準備工序S2所準備的 結晶材料之雙折射測定。由於晶軸方位與雙折射間之對應 關係在前面已預先備妥,因而可使用該對應關係,由經測 得之雙折射算出晶軸方位。 如上述,若依照第二測定法,則即使未以直接方式測定 -32 - 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) B7 五、發明説明(3〇 ) 晶料方位也能求出結晶材料之晶軸方位。 接著,就折射構件形成工序以說明如 成工序靖經由結晶材料準備工序82準備妥之結= 力:以加工而形成特定形狀的光學構件 : 構件形成工序S4之先後順序,無論二 者為先均可’例如可採取在晶軸敎工 構件形成工序S4的第一之媸杜y 1 貝她折射 工序S4之後實施晶軸測定工序幻的第二之構件形成方法成 以及同時貫施晶軸測定工序幻與折射構件形成 三之構件形成方法。 7 $ 首先就第-之構件形成方法說明如下。在第—之構 成方法則對於經在結晶材料準備工序幻準備妥的圓盤材料 貫施磨削、研磨等加工’使光學構件符合含有經在設計工 序S1所得有m方位的參數之設計數據。此時應在經加 工的光學構件標上特定的標記,俾能識別光學構件之^ 方位。 9日 具體而言,其係使用由經在結晶材料準備工序幻判定過 晶軸方位的結晶材料(典型的是圓盤材料)視需要而施予磨 削加工之材料來製造構成投影光學系統之折射構件。即八 用傳統研磨工序並以設計數據中之面形狀、面間隔為目二 而研磨加工各透鏡表面以製造具有特定形狀之折射構件7 此時則邊以干涉儀測定邊反覆進行研磨,使各透鏡之面形 狀接近於目標面形狀(最佳配合球面形狀)。如此進行,备 各透鏡之面形狀誤差符合特定範圍時則以如圖9所J精= -33 - 571344 A7 B7 五、發明説明(31 ) 的干涉儀裝置測定各透鏡之面形狀誤差。 圖9所示干涉儀裝置,係適合於設計值為球面的球面透 鏡之面形狀測定。圖9中,來自於干涉儀裝置122之射出光 係入射於支撐在斐索(Fizeau)載物台123a上之斐索透鏡123 。其中經在斐索透鏡123的參考面(斐索面)反射之光將作為 參考光而回至干涉儀裝置122。另在圖9中雖以單一透鏡代 表斐索透鏡123,但實際之斐索透鏡卻由複數個透鏡(透鏡 群)所構成。另方面,透射過斐索透鏡123之光將作為測定 光而入射於被檢透鏡124之被檢光學面。 由被檢透鏡124之被檢光學面反射之測定光,則經由斐 索透鏡123回至干涉儀裝置122。如此,根據回至干涉儀裝 置122足參考光與測定光之相位偏離,即能檢測出被檢透 鏡124之相對於被檢光學面之波前像差,進而檢測出被檢 透鏡124之面形狀誤差(自設計上的最佳配合球面之偏離)。 按關於以干涉儀測定球面透鏡之面形狀誤差之詳細内容, :參閱例如曰本專利特開平第7」2 535號公報、及特開平 第7-1 1 3609號公報、特開平第丨〇-1 54657號公報等。此外 ,若使用干涉儀而測定非球面透鏡之面形狀誤差,則在圖 9之干/y儀裝置中取代斐索透鏡123而在斐索載物台123 a 上設置具有平面形狀參考面之參考構件,與用以使透射過 該參考構件之光變換成特定形狀的非球面波之非球面波形 成構件。其中非球面波形成構件係包括透鏡、波域片(麻 plate)、或這些之組合,其係用來使來自於參考構件之平面 波變換成對應於測定對象的被檢光學面之面形狀之非球面 -34 本紙張尺度適用中國國家標準(CNS) A4規格(21〇\297公|)_ 571344 A7Composition of crystalline material. Next, the crystal axis measurement laboratory is implemented as follows. The measurement is performed in the crystal shaft step S3. At this time, you can take the second measurement of the crystal axis of the crystalline material prepared by S2, and prepare = S2 and determine the orientation of the crystal axis indirectly. First, the first method of measuring the orientation of the crystal axis described as follows. The C system uses an x-ray crystal analysis method to directly measure a crystalline material ... imprint ... and further measure a crystal axis. Such a measuring method is, for example, a Laue method, which is well known. The following applies the Laue method as the first measuring method and is briefly described below with reference to FIG. 7. FIG. 7 is a diagram of a schematic camera. As shown in FIG. 7, the Laue camera for realizing the crystal axis measurement according to the Laue method has an X-ray source 100 for guiding the ray line 101 from the parent line source 100 to a sample. Collimator 102 ′ of crystalline material 103 and X-ray photosensitive member 105 for exposure to diffraction X-ray 104 diffracted by self-crystal material 103. Among them, although not shown in FIG. 7 In the first measurement method, first, the X-ray 1 〇1 is irradiated to the warp In the crystalline material 103 prepared in the crystalline material preparation step S2, a diffraction X-ray 104 is generated from the crystalline material 103. The diffraction X-ray 104 is used to expose the X-ray arranged on the incident side of the X-ray of the crystalline material 103. X-ray photosensitive member 105 such as a film or an imaging plate to make the pattern corresponding to the crystalline structure visible (Diffraction image) is formed on the X-ray photosensitive member 105. The diffraction image (Laue pattern), knot -30-This paper size applies the Chinese National Standard (CNS) A4 specification (210X 297 mm) 571344 V. Description of the invention (28 crystal material will be W when it is single crystal). In Taiyin, the shape is therefore called Laue spot (LaUe is known, so the Jinpo plant, Caike 4 Laoshi and its crystal Structural analysis Θ Laue spot when it is clear that the first axis of the crystal axis is measured in a direct way. The axis is tens of thousands. The method can also be used, such as ··, etching method, and is not limited to Lao. * 边 使Crystals are turning or vibrating. Zhao Chao · X knots «^^ (Weissenberg material: split ηΉ me— " 1) and other X-ray crystal analysis methods, or the use of crystals appeared in two: ΓΓ Direct observation of the crystalline material Plastic deformation = mechanical; material: the surface with a unique shape of the image of E, and then 'by measuring the birefringence of ^ crystalline material to determine the orientation of the crystal axis indirectly the second measurement method is briefly described below. In the second measurement method, First, the orientation of the day-to-day axis of the material The relationship between the shots corresponds. At this time, the orientation of the crystal axis of the crystalline material sample should be determined by the first method described above. Then, the birefringence of each of the plurality of crystal axes of the crystalline material sample is measured. Figure 8 Series A schematic diagram showing the structure of a birefringence measuring machine. In FIG. 8, the light from the light source 110 is transformed from polarized photon 11 丨 into linearly polarized light having a vibration plane inclined only 7Γ / 4 from the horizontal direction (χ direction). The linearly polarized light is irradiated on the crystalline material sample 1 13 by the phase modulation of the photoelastic modulator 112. That is, the linearly polarized light having the phase changed is incident on the crystalline material sample 丨 i 3. The light transmitted through the crystalline material sample 113 is introduced into the photon detector 114, so that polarized light having a vibrating surface only in the horizontal direction (X direction) passes through the photon detector 114 and is detected by the photodetector 115. -31-'This paper size applies the Chinese National Standard (CNS) A4 specification (21 × 297) 571344 A7 _____ B7 V. Description of the invention (29) When the specific phase delay caused by the photoelastic modulator 1 12 By measuring the amount of light that can be detected by the photodetector u 5 while changing the phase delay amount, the direction of the phase delay (phase delay) axis and its refractive index, and the phase advance (phase advance; phase lead) refractive index of the axis. If there is birefringence in the sample, the phase of the two linearly polarized light orthogonal to the vibration surface (polarizing surface) of the sample due to the difference in refractive index will change. That is, relative to the polarized light on one side, the phase of the polarized light on the other side must be advanced or delayed. Therefore, the polarized light direction in which the phase is advanced is referred to as a phase axis, and the polarized light direction in which the phase is delayed is referred to as a phase axis. . In the present embodiment, the biaxial refraction measurement is performed on each crystal axis of the crystal material sample that has become a known crystalline material sample through the first measurement method described above, and the crystal axis orientation of the crystal material is doubled with its orientation. The relationship between the amount of refraction corresponds. At this time, in addition to the representative crystal axes such as [1〇〇] [1 1 0], and [111], the crystal axes of the crystalline material to be measured may also be [1 12], [2 1 〇], and [211] Equivalent crystal axes (According to crystal axes [〇1〇], [001] are crystal axes equivalent to the above-mentioned crystal axes [100]], and crystal axes [〇11], [101] are It is equivalent to the above-mentioned crystal axis [丨 丨 〇]. The crystal axis located in the middle of the measured crystal axis can also be interpolated using a specific interpolation formula. In the crystal axis measurement step S3 to which the first measurement method is applied, the birefringence measurement of the crystalline material prepared through the crystalline material preparation step S2 is performed using the birefringence measuring machine shown in Fig. 8. Since the corresponding relationship between the crystal axis orientation and birefringence has been prepared in advance, the corresponding relationship can be used to calculate the crystal axis orientation from the measured birefringence. As mentioned above, if the second measurement method is followed, even if it is not directly measured -32-This paper size applies the Chinese National Standard (CNS) A4 (210 X 297 mm) B7 V. Description of the invention (3〇) Crystal Orientation can also determine the crystal axis orientation of the crystalline material. Next, the refraction member forming process will be explained as a result of the preparation process through the crystalline material preparation step 82. = Force: Form a specific shape of the optical member by processing: The order of the member forming step S4, regardless of whether they are first For example, it is possible to adopt a method for forming a second member to perform the crystal axis measurement step after the first refraction step S4 of the crystal axis masonry member formation step S4 and perform the crystal axis measurement step simultaneously. Three methods of forming the magic and refraction members. 7 $ First, the method of forming the first component is explained as follows. In the first method, the disc material prepared through the crystalline material preparation process is subjected to grinding, grinding, and the like, so that the optical component conforms to the design data containing the parameters in the m direction obtained in the design process S1. At this time, a specific mark should be marked on the processed optical component so that the ^ orientation of the optical component cannot be identified. Specifically, on the 9th, the projection optical system is manufactured by using a crystalline material (typically a disc material) that has been subjected to a grinding process to determine the orientation of the crystallographic axis in the crystalline material preparation process, if necessary, to manufacture a projection optical system. Refraction member. That is, the conventional grinding process is used to polish the surface of each lens with the surface shape and surface interval in the design data to produce a refractive member with a specific shape. 7 At this time, it is repeatedly polished while measuring with an interferometer to make each The shape of the lens surface is close to the shape of the target surface (best fit spherical shape). In this way, when the surface shape error of each lens meets a specific range, the surface shape error of each lens is measured with the interferometer device of (31) as shown in Fig. 9 J == -33-571344 A7 B7. The interferometer device shown in Fig. 9 is suitable for measuring the surface shape of a spherical lens having a design value of a spherical surface. In FIG. 9, the emitted light from the interferometer device 122 is incident on a Fizeau lens 123 supported on a Fizeau stage 123a. The light reflected on the reference surface (Fizeau surface) of the Fizeau lens 123 will be returned to the interferometer device 122 as reference light. In Fig. 9, although a single lens is used to represent the Fizeau lens 123, the actual Fizeau lens is composed of a plurality of lenses (lens groups). On the other hand, the light transmitted through the Fizeau lens 123 is incident on the optical surface to be inspected of the lens 124 as the measurement light. The measurement light reflected from the optical surface of the test lens 124 is returned to the interferometer device 122 via the Fizeau lens 123. In this way, according to the phase deviation between the reference light and the measurement light returned to the interferometer device 122, it is possible to detect the wavefront aberration of the inspected lens 124 relative to the inspected optical surface, and then detect the surface shape of the inspected lens 124 Error (deviation from the best fit spherical surface in design). For details on measuring the surface shape error of a spherical lens by an interferometer, see, for example, Japanese Patent Laid-Open No. 7 "2 535, Japanese Patent Laid-Open No. 7-1 1 3609, Japanese Patent Laid-Open No. 丨 〇- 1 54657 and the like. In addition, if an interferometer is used to measure the surface shape error of the aspheric lens, a reference having a plane-shaped reference surface is set on the Fizeau stage 123 a in the dry / y meter device of FIG. 9 instead of the Fizeau lens 123. A member, and an aspheric wave forming member for converting the light transmitted through the reference member into an aspheric wave of a specific shape. The aspheric wave forming member system includes a lens, a wave plate, or a combination of these. It is used to transform a plane wave from a reference member into a non-linear surface shape corresponding to the optical surface of the object to be measured. Spherical-34 This paper size applies to China National Standard (CNS) A4 specifications (21〇 \ 297mm |) _ 571344 A7
波者。按關於像這樣的非球面透鏡之測定方法,可參閱例 如日本專利特開平第i 〇_2 6〇〇2 〇號公報、特開平第“ 2 60024號公報、及特開平第11-6784號公報。 _ 一在折射構件形成工序S4中第一之構件形成方法,則反覆 實施測定•研磨,直至經測得之面形狀符合特㈣圍内為 止0 另方面,近年來冒揭露有一種在保持透鏡等光學構件時 ,為使透鏡所承受的應力減至最小限度,在透鏡周邊部祝 置複數個隆起部(脊),而以保持該透鏡之保持構件(透= 韃)將這些複數個脊部保持成可自由活動者(請參閱日本= 利特開第2 001 -74991號公報)。因而使這樣的複數個隆起 部加工成也能兼作為指示光學構件晶軸方位之標記時,即 可兼作指示加工後的光學構件之晶軸方位之用。而且若依 照上述光學構件保持方法,則由於可使保持構件與光學構 件足位置·姿勢之關係成為一定,因而也可在該保持構件 上設置用以標示光學構件晶軸方位之資訊(標記等 接著,就第二之構件形成方法說明如下。在第二之構件 形成Z法,則對於經在結晶材料準備工序S2準備妥之圓盤 材料實施磨削、研磨等加工。此時則使用經在設計工序S1 所得設計數據中之面形狀、面間隔、有效徑(外徑)等參數 (在不使用有關晶軸方位之參數下)而實施加工。另外在第 二之構件形成方法中,也與第_之構件形成方法同樣地反 覆進行測定·研磨,直至面形狀符合特定範圍内為止。然 後使用上述第一測定法而測定經予加工的光學構件之晶轴 巧張尺度it财S时標準 35 - X 297^17Waver. For the measurement method of such an aspheric lens, refer to, for example, Japanese Patent Laid-Open No. i 0_2 6002, Japanese Patent Laid-Open No. 2 60024, and Japanese Patent Laid-Open No. 11-6784. _ Once the first member forming method in the refractive member forming step S4, the measurement and grinding are repeatedly performed until the measured surface shape conforms to the range of the special area. On the other hand, in recent years, it has been disclosed that there is a kind of holding lens In order to minimize the stress on the lens when waiting for an optical member, a plurality of ridges (ridges) are placed on the periphery of the lens, and the plurality of ridges are held by a retaining member (through = 鞑) that holds the lens. Remain freely movable (see Japanese Patent Publication No. 2 001-74991). Therefore, when such a plurality of bulges are processed into a mark that can also serve as an indicator of the orientation of the crystal axis of the optical member, it can double It is used to indicate the orientation of the crystal axis of the processed optical component. Furthermore, according to the above-mentioned optical component holding method, the relationship between the foot position and posture of the holding component and the optical component can be constant, Information on the orientation of the crystal axis of the optical member (marks, etc.) may be provided on the holding member. Next, the method of forming the second member is described below. In the second method of forming the Z method, preparation of the crystal material The disc material prepared in step S2 is subjected to grinding, grinding, etc. At this time, parameters such as the surface shape, the surface interval, and the effective diameter (outer diameter) in the design data obtained in the design step S1 are used (when the relevant crystal is not used). The axis direction parameter is used to perform processing. In addition, in the second member formation method, the measurement and polishing are repeated repeatedly in the same manner as the first member formation method until the surface shape falls within a specific range. Then use the first The standard for measuring the crystal axis of the pre-processed optical component is 35-X 297 ^ 17
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571344 A7 B7571344 A7 B7
五、發明説明(S3 ) 方位,並將有關經測得的晶軸方位之資訊,例如以標記等 標上於經予加工的光學構件。 如上述,若依照本實施形態,則在經加工成透鏡等後也 能決定晶轴方位。 再者’第一之構件形成方法係在經從結晶材料形成折射 構件後才實施晶軸方位之測定,惟也可在折射構件之形成 途中實施該晶軸方位之測定(第三之構件形成方法)。V. Description of the invention (S3) Orientation, and the information about the measured orientation of the crystal axis, such as marking on the pre-processed optical component with a mark or the like. As described above, according to this embodiment, the crystal axis orientation can be determined even after processing into a lens or the like. Furthermore, the first method of forming a member is to measure the orientation of the crystal axis after forming a refractive member from a crystalline material, but the measurement of the orientation of the crystal axis may also be performed during the formation of the refractive member (third method of forming a member ).
裝 接著,在組裝工序S5則將各光學構件之位置定位成能使 其光軸垂直方向之位置、及光軸周圍之回轉角(方位角&)符 合於經由設計工序51所得之設計參數,而組裝成投影光^ 系統。 如上述,若依照第一實施形態之投影光學系統之製造方 法,則由於可在關於複數個偏光成分而邊評估起因於;= 螢石或氟化鋇等等軸晶系結晶材料之雙折射影響下,邊以 能使上述雙折射影響變得極小之方式而決定由上述等軸# 系結晶材料所構成折射構件晶軸之組配角《,因 : 良好的光學性能。 崔保Then, in the assembly step S5, the position of each optical component is positioned so that the position of the optical axis in the vertical direction and the rotation angle (azimuth angle) around the optical axis are in accordance with the design parameters obtained through the design process 51. And assembled into a projection light system. As described above, if the manufacturing method of the projection optical system according to the first embodiment is used, it is possible to evaluate the cause due to the plurality of polarizing components; = birefringence effect of axial crystalline materials such as fluorite or barium fluoride Next, in order to make the above-mentioned birefringence effect extremely small, the supporting angle of the crystal axis of the refractive member composed of the above-mentioned equiaxed # -based crystalline material is determined, because of good optical performance. Cui Bao
線 在上述第一實施形態’係採取使等軸晶系結晶材 的折射構件之晶軸方位最佳化而減少投影光學,系统像差之 方法,但只依賴晶軸方位最佳化,仍 要求的光學性能目俨之條7。π & ”·、次,雨足 心丄風“兄下面’則就以非晶折射構件 仙先予性能退化之投影光學系統之製造方法加以說明。 =學性能退化係起因於由等料晶系結晶材料構成之等 υ折射構件所具有之㈣雙折射。㈣加說明依 -36 - 本紙張尺歧财@ ®家標準_了1^格(21〇 X 297公紅 571344 五、發明説明(34 施形態的投影光學系統製造方法之前,、 容,先就其概要參閱圖1〇下扼要說明如為更加容易明暸内 本發明第二實施形態之投影光學系:、圖W係顯示依 圖。 、 I造方法概略流程 如圖H)所示,第二實施形態之投影光 ’係除第-實施形態之製造方法所且有M、. 4造万法 材料準備工序S2、晶轴測定工序^十工序Sl、、结晶 序S4、以及組裝工序_,更具有非:二斤=件形成工 雙折射量測定工序S7、以及第二折射構 中第一折射構件形成工序S4 施成序8。其 件形成工⑽同之工序,惟在本實施= 二:射構件形成工序S8混淆不清,不再沿用折‘件形 成序S4(名稱而改稱為第一折射構件形成工序μ。 以下’說明其與第一實施形態之製造方法不同之部分。 首先在,又计工序S1,供加以最佳化的投影光學系統之 數,除仍使用第_實施形態之設計參數外再加上例如石英 或摻雜有氟之石英等非晶材料之雙折射量。 ,如圖11(a)所示,投影光學系統則就具有由等軸晶 系結晶材料構成之複數個折射構件j i、12,與由石英或摻 f有氟尤石英等非晶材料構成之折射構件13的光學系統之 場合加以說明。 等軸叩系之結晶材料例如由螢石構成之第一折射構件工^ 及第二折射構件12中,使其晶軸[111]配置成與光軸Αχ相符 ,並使第二折射構件12以光軸Αχ為中心相對於第一折射構 -37 - 571344 A7In the first embodiment described above, the method of optimizing the crystal axis orientation of the refractive member of an equiaxed crystal system crystal material and reducing the projection optical and system aberrations is adopted. However, it is still only required to optimize the crystal axis orientation. The optical performance of Article 7. π & ", time, rain foot, heart, and wind" under the brother "will explain the manufacturing method of the projection optical system using the amorphous refraction member to degrade the performance in advance. = The deterioration of the academic performance is due to the ㈣ birefringence of the equal υ refraction member composed of isocrystalline crystal material.说 明加 解 依 -36-This paper rule Qi Cai @ @ 家 标准 _ 了 1 ^ 格 (21〇X 297 公 红 571571344 V. Description of the invention (34) Before the method of manufacturing the projection optical system, the content, the first For an overview, refer to FIG. 10. The following briefly explains how to make it easier to understand the projection optical system of the second embodiment of the present invention: FIG. W is a diagram showing the figure. The outline of the manufacturing method is shown in FIG. The projection light of the form is in addition to the manufacturing method of the first embodiment, and includes a material preparation step S2, a crystal axis measurement step ^ ten steps S1, a crystal sequence S4, and an assembly step _, and has Non: two pounds = step S7 for measuring the birefringence of the piece forming process, and step S4 of the first refractive member forming step S2 in the second refraction structure. The procedure for forming the piece is the same, but in this implementation = 2: The member forming step S8 is confusing, and the folding piece forming order S4 (the name is renamed to the first refractive member forming step μ is no longer used. The following 'explains the part which is different from the manufacturing method of the first embodiment. First, Step S1 is also counted for optimized investment. The number of optical systems, in addition to the design parameters of the first embodiment, is added to the birefringence of amorphous materials such as quartz or quartz doped with fluorine. As shown in Figure 11 (a), the projection optical system An optical system having a plurality of refractive members ji and 12 composed of an equiaxed crystal material and a refractive member 13 composed of quartz or an amorphous material doped with fluorite or the like will be described. The crystalline material of the system is, for example, the first refraction member ^ made of fluorite and the second refraction member 12 so that their crystal axis [111] is arranged to coincide with the optical axis Ax, and the second refraction member 12 is aligned with the optical axis Ax Centered with respect to the first refracting structure -37-571344 A7
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571344 五、發明説明(36 =圖即可明白,就第一及第二折射構件"、 =:::最大的晶軸[11°]、叫陶之影響已1 ’部會殘留對於周 區或 折射率Λ 射率比料徑方向偏光的 折射丰為小的雙折射區域。換言之, 晶材料所構成折射構件的晶軸角由寺轴阳系結 角度而也有可能受到某一程户=[視晶軸之 於確保完美的成像性能(光學二能)。斤射影響之情況’致難 於是在本實施形態,則採取對於由盥 構構件",異的非晶材料構IS二= 忒丁用來取消(cancel)因折射構件u、Μ 雙折射分布。於圖u⑷顯示該折射構件13之雙折射=之 =於對於由非晶材料構成之折射構件賦予所望的雙::二 ,方法二則在後述非晶材料準備工序S6中加以說明斤射刀 上述叹计工序S1,則算出由像這樣的非晶 :::構:Γ折射分布。具體而言,其係將折射構件 =計數據)’而如第-實施形態方式 折:二形態中,也可採取將由非晶材料所構成 ,件的雙折射率分布之參數以外之參數(與第—實 悲《參數相同之參數)予以最佳化,並對於 她/ ^#^^6,^,^(residual6ΓΓ〇;^Γϊ Γ! 晶材料所構成折射構件的雙折射率分布之參數最:二;: 39 - ><297忑釐) i紙張尺度適用巾a S家標準(CNS) 571344 A7 B7 五 發明説明(37 正之方法。 另外,與第一實施形態同樣地也可採取如下列方法, ^刀則只變更構成投影光學系統的光學構件(透鏡、反射面 寺)〈面形狀、面間隔、偏心量、相對於光軸之傾 射:、有效徑、公差等由非晶材料構成之光學系心具有 《參數’而補正投影光學系統光學性能中之標量成分像差 ’然後藉變更薄膜之結構、光學構件之雙折射分布 :為中心的方位角等參數’而補正標量成分及偏光 像差之方法。 、再者’經使由等軸晶系結晶材料構成的折射構件之晶軸 :位最佳化的結果’若不只是偏光像差,連標量像差也會 殘留時,也可在構成投影光學系、统Μ學構件中 :構件的光學面(透鏡面、反射面),形成用來補正該:量 像非球面。該非球面可兼作經由後述組裝工序以 驟S526所算出殘餘像差補正用的非球面(典型的是關於光轴 而呈回轉非對稱的形狀)之用,也可分開而設置。若採用八 開設置’則在該設計工序81時預先將其非球面形狀(相對二 先軸而呈回轉對稱或回轉非對稱的形狀)作為設計參數而加 入即可。 接著,就非晶材料準備工序S6說明如下。在本實施形態 ,非晶材料係使用石英或摻雜有氟之石英(下稱為改性; 吳)’惟此種石英或改性石英卻與光學結晶不同而在理相 狀態下不會顯現雙折射性。 〜 然在石英或改性石英,若有雜質掺人於其中,或在冷卻 裝 訂 -40 - 571344 A7 B7 五、發明説明(38 ) " ' 經以高溫形成之石英時,若溫度分布不勾,卻會顯現雙折 射性。於是在本實施形態則採取調整其摻入於錠中的雜質 量或種類以及熱歷程,藉此使所望的雙折射分布產生於^ 英或改性石英之方法。 上述雜質可使用OH、C1、金屬雜質、溶解氣體,若採 取直接法(direct method),就摻入量來說,則以含有數百 ppm以上之〇H,其次為含有數十ppm之(^為較具影響力。 孩雜質若摻入於錠中,材料之熱膨脹係數即將起變化,因 而例如實施退火處理後使其冷卻時,摻有雜質之部分的收 縮私度會增加,會造成收縮程度不同所引起内部應力而產 生應力雙折射。 至於熱歷程方面,無論是採取上述直接法、VAD (蒸汽 軸向沉積;vapor axial depositi〇n)法、溶膠•凝膠(s〇i gei) 法、電漿噴燈(plasma burner)法等中任何製造方法,均會存 在。 在本實施形態則由喷燈流出將作為石英的原料之Si化合 物氣體(為送出Si化合物而使使用〇2、 ’與供用於加熱之燃燒氣體(〇2氣體與H2氣體),並t/在) 火焰内使石英沉積之火焰水解法而進行石英合成以製得錠 。足後,則將錠切出而製得圓盤材料,然後實施該圓盤材 料之退火處理(或緩慢冷卻)。 、並且在本實施形態中,則將合成石英時之合成條件,與 退火處理時之熱歷程條件加以調整,俾使由石英構成之折 射構件的雙折射分布符合經由設計工序§1算出之雙折射分 41 - 571344 五、發明説明(39 ) 布。此時,合成條件之參數則有諸如噴燈結構、氣體流量 、、排氣流量、輕之搖動模式等。此外像這樣的合成 退火條件,也可由試錯法(try and err〇r meth〇d)方式求得, 或是使用經驗公式(empirical f〇rmula)而決定。 再者,在本實施形態則使例如由石英或改性石英所構成 非晶材料之雙折射分布對稱軸,與由該非晶材料所形成折 射構件之光軸相符。所以在合成石英時,則邊使錠作回轉 邊進行合成,俾使錠中之雜質濃度及物性分布呈中心對稱 型2因此該錠之中心位置(大致與合成時之回轉中心相符) 就是應力分布之中心,所以在後述第二折射構件形成工序 則以該中心位置為基準(使中心位置相符於光軸之下)而形 成折射構件為宜。因而較理想為將其中心位置標上於由鍵 切出的原材料上。 並且在進仃退火處理時,使由錠切出之原材料形狀切成 為圓筒形狀之圓盤材料,並在具有中心對稱的溫度分布之 爐中央進行加熱。此時則以邊使圓盤材料回轉邊進行退火 處理為宜。 、=著’就雙折射量測定工序37說明如下。在該雙折射量 測定工序S7 ’則測定經由非晶材料準備工序所製得由石 英或改性;5英構成之#晶材料的雙折射分布。言亥雙折射分 布之測疋可使用以圖8所示之雙折射測定機,且其測定方 法也正如前面所述,因而不加說明。另外較佳為以例如在 :盤材料標上標記等方法,使非晶材料擁有經由該測定所 知有關雙折射分布的對稱軸位置之資訊。 571344571344 V. Description of the invention (36 = figure can be understood, as for the first and second refractive members ", = ::: the largest crystal axis [11 °], the influence of Tao is already 1 'part will remain on the peripheral area Or the refractive index Λ emissivity is smaller than the refraction abundance of polarized light in the material diameter direction. In other words, the crystal axis angle of the refraction member composed of crystalline material depends on the angle of the temple axis and may be subject to a certain process = [ The apparent crystal axis is to ensure perfect imaging performance (optical dual energy). In the case of the influence of the laser beam, it is difficult to use this embodiment. For this embodiment, the structure of the amorphous material is different. D is used to cancel the birefringence distribution due to the refraction members u and M. Fig. U⑷ shows the birefringence of the refraction member 13 = = = to give the desired birefringence to the refraction member composed of amorphous material: 2: two, method Two are described in the amorphous material preparation step S6 described below. The above-mentioned step S1 is used to calculate the refractive distribution of amorphous ::: structure: Γ. Specifically, it refers to the refractive member = meter. Data) 'And as in the first embodiment, the mode is folded: In the second mode, It is also possible to optimize parameters other than the parameters of the birefringence distribution made of amorphous materials (parameters the same as the first parameter), and for her / ^ # ^^ 6, ^, ^ (residual6ΓΓ〇; ^ Γϊ Γ! The parameters of the birefringence distribution of the refractive member composed of the crystalline material are the most: two ;: 39-> < 297 mm) i Paper size is applicable to a standard (CNS) 571344 A7 B7 Fifth invention description (37 positive method. In addition, similar to the first embodiment, the following method can also be adopted, ^ knife only changes the optical components (lens, reflecting surface temple) constituting the projection optical system <surface shape, surface Interval, eccentricity, and tilt relative to the optical axis: The optical core made of amorphous material, such as effective diameter, tolerance, etc. has "parameters" and corrects the scalar component aberration in the optical performance of the projection optical system, and then changes the film by Structure, birefringence distribution of optical components: methods for correcting scalar components and polarization aberrations as parameters such as the azimuth of the center. Furthermore, the crystal axis of a refractive component composed of an equiaxed crystal material is used: Bit optimization Result 'If it is not only polarized aberration, but even scalar aberration will remain, it can also be used to form the projection optics and system components: the optical surface (lens surface, reflective surface) of the component, which is used to correct this: Quantitative image aspheric surface. This aspherical surface can also serve as an aspheric surface (typically a rotationally asymmetric shape with respect to the optical axis) for correction of residual aberration calculated in step S526 through an assembly process described later, or it can be provided separately. If the eight-open setting is used, the aspheric shape (rotationally symmetrical or rotationally asymmetrical shape with respect to the second axis) can be added as a design parameter in advance in the design process 81. Next, the amorphous material preparation process S6 is explained as follows. In this embodiment, the amorphous material is quartz or fluorine-doped quartz (hereinafter referred to as modified; Wu). However, this type of quartz or modified quartz is different from optical crystals and does not appear in the physical phase state. Birefringence. ~ Of course, in quartz or modified quartz, if there are impurities mixed in it, or in cold binding -40-571344 A7 B7 V. Description of the invention (38) " 'When the quartz formed at high temperature, , But it will show birefringence. Therefore, in this embodiment, a method of adjusting the amount or type of impurities to be incorporated in the ingot and the thermal history is adopted to generate the desired birefringence distribution from quartz or modified quartz. The above impurities can use OH, C1, metal impurities, and dissolved gases. If a direct method is adopted, the content of the impurities is hundreds of ppm or more of 0H, followed by tens of ppm (^ If the impurities are mixed in the ingot, the thermal expansion coefficient of the material will change soon. Therefore, for example, when annealing is performed to cool the material, the shrinkage degree of the impurity-doped portion will increase, which will cause the degree of shrinkage. As for the internal stress caused by different stress birefringence. Regarding the thermal history, whether it is the direct method, the VAD (vapor axial depositi) method, the sol · gel (soi gei) method, Any manufacturing method such as a plasma burner method may exist. In this embodiment, a Si compound gas that is a raw material of quartz flows out of the torch (for the Si compound, it is used 〇2, 'and supply Quartz is synthesized by the flame hydrolysis method of quartz deposition in a heated combustion gas (0 2 gas and H 2 gas) and t / in) flame to obtain an ingot. After the step, the ingot is cut out to obtain the ingot. Disc material, and then perform annealing treatment (or slow cooling) of the disc material. In this embodiment, the synthesis conditions during the synthesis of quartz and the thermal history conditions during the annealing treatment are adjusted so that the quartz The birefringence distribution of the refraction member constitutes the birefringence score 41-571344 calculated through the design process §1. 5. Description of invention (39). At this time, the parameters of the synthesis conditions are such as the structure of the torch, the gas flow rate, and the exhaust gas. Flow rate, light shaking mode, etc. In addition, such synthetic annealing conditions can also be obtained by trial and error method (try and error method), or determined by using empirical formulas. In this embodiment, for example, the axis of symmetry of the birefringence distribution of an amorphous material composed of, for example, quartz or modified quartz is consistent with the optical axis of a refractive member formed of the amorphous material. Therefore, when synthesizing quartz, The ingot is synthesized with the turning edge, so that the impurity concentration and physical property distribution in the ingot are center-symmetric. 2 Therefore, the center position of the ingot (approximately the center of rotation during synthesis) Symbol) is the center of the stress distribution, so in the later-mentioned second refractive member forming step, it is preferable to form the refractive member based on the central position (so that the central position is aligned below the optical axis). Therefore, it is preferable to set the central position It is marked on the raw material cut out by the key. During the annealing treatment, the shape of the raw material cut out from the ingot is cut into a cylindrical disk material, and it is heated in the center of the furnace with a symmetrical temperature distribution. In this case, it is preferable to perform the annealing treatment while turning the disc material. The following describes the birefringence measurement step 37. In this birefringence measurement step S7, the measurement is performed through the amorphous material preparation step. The birefringence distribution of #crystalline material made of quartz or modified; The measurement of the birefringence distribution can be performed using the birefringence measuring machine shown in Fig. 8, and the measuring method is as described above, so it will not be described. In addition, it is preferable to use a method such as marking the disc material so that the amorphous material has information about the position of the axis of symmetry of the birefringence distribution known through the measurement. 571344
此外’在本雙折射量測定工序較理想為也同時測定非晶 材料之折射率分布。以下參閱圖12說明非晶材料之折射率 =對值及折射率分布之測定方法。圖12係概略顯示用以測 定折射率絕對值及折射率分布之干涉儀裝置之圖。 在圖12中,被檢物體之非晶材料133係擺放於填充有油 料131之試樣盒132中特定位置。並且使來自於由控制系統 134控制的干涉儀裝置135之射出光入射於支撐在斐索载物 台136a上之斐索平板(斐索平面)136。 、此時,經由斐索平板136反射之光將作為參考光而返回 於干涉儀裝置135。另方面透射過斐索平板136之光將作為 測定光而入射於試樣盒132内之被檢物體133。透射過被檢 物體133之光將為反射平面137所反射而經由被檢物體η)及 斐索平板136而返回於干涉儀裝置135。如此可根據返回於 干涉儀裝置135之參考光與測定光之相位偏離,而測出非 晶光學構件133之折射率分布所造成之波前像差。按有關 使用干涉儀而敎折射率均句性之詳細内$,請參閱例如 日本專利特開平第8-5505號公報等。 接著,就用以由非晶材料形成折射構件之第二折射構件 形成工序S8說明如下。 在第二折射構件形成工序S8,則使用在雙折射量測定工 序S7由經測定過雙折射分布或折射率分布之非晶材料(典型 =是圓盤材料)視必要而加以磨削之材料,以製造供構^投 影光學系統之各透鏡。亦即,依照傳統研磨工序,以設計數 據中之面形狀、面間隔作為目標而研磨加工各透鏡之表面In addition, in this birefringence measurement step, it is desirable that the refractive index distribution of the amorphous material is also measured at the same time. The method of measuring the refractive index of the amorphous material = the logarithmic value and the refractive index profile is described below with reference to FIG. 12. Fig. 12 is a diagram schematically showing an interferometer device for measuring the absolute value of the refractive index and the refractive index distribution. In Fig. 12, the amorphous material 133 of the object to be inspected is placed at a specific position in the sample case 132 filled with the oil 131. The light emitted from the interferometer device 135 controlled by the control system 134 is made incident on a Fizeau flat plate (Fizeau plane) 136 supported on the Fizeau stage 136a. At this time, the light reflected by the Fizeau plate 136 will be returned to the interferometer device 135 as reference light. On the other hand, the light transmitted through the Fizeau plate 136 is incident on the object 133 in the sample box 132 as the measurement light. The light transmitted through the test object 133 is reflected by the reflection plane 137 and returns to the interferometer device 135 via the test object n) and the Fizeau plate 136. In this way, the wavefront aberration caused by the refractive index distribution of the amorphous optical member 133 can be measured based on the phase deviation of the reference light and the measurement light returned to the interferometer device 135. Please refer to Japanese Patent Application Laid-Open No. 8-5505 for details on how to use the interferometer to determine the refractive index uniformity. Next, a second refractive member forming step S8 for forming a refractive member from an amorphous material will be described below. In the second refraction member forming step S8, a birefringence measurement step S7 is used in which a birefringent distribution or refractive index distribution of an amorphous material (typical = disc material) has been ground as necessary, To manufacture the lenses for the projection optical system. That is, according to the traditional polishing process, the surface of each lens is ground and processed in the design data as the target.
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五、發明説明(41 ) 以製造具有特定形狀的透鏡面之折射構件。該第二折射構 件形成工序也與第一折射構件形成工序(第一實施形 射構件形成工序叫同樣地,邊以干涉儀測定各透鏡之面形 狀邊反覆進行研磨,使各透镇> & 定合逐^《面形狀接近目標面形狀(最 佳配合球面形狀如此進行,當各透鏡之面形狀誤差符合 特定範圍内時,與第-折射構件形成工序(第實施形態之折 射構件形成工序S4)同樣地,使用例如圖9所示之精密的干 涉儀裝置而測定各透鏡之面形狀誤差。在第二折射構件形 成工序S8也須反覆實施測定•研磨,直至所測得之面形狀 能符合特定範圍為止。 接著’參閱圖13就第:實施形態之組裝工序以說明如下 。圖13係顯示第二實施形態之投影光學系統製造方法之組 裝工序S5的詳細内容之流程圖。通常流程圖係以菱形塊代 表其判斷工序’但為了圖示方便在圖13中卻如圖示以六角 形代表判斷工序(例如,圖13之3514、S517、s522、MU、 S532) 〇 (步驟S510) 处在步驟S5 10,則根據··以晶軸測定工序S3所測得有關由 、。曰日材料構成之折射構件的晶軸之資訊,以第一折射構件 2成工序S4所測得有關加工後的折射構件之面形狀及面間 隔足f訊,以雙折射量測定工序以所測得有關由非晶材料 構成之折射構件的折射率及分布以及雙折射量及分布之資 Λ ’以及以第一折射構件形成工序S8所測得有關加工後的 折射構件之面形狀及面間隔之資訊;而藉使用電子計算機 571344 A75. Description of the invention (41) A refractive member having a lens surface with a specific shape is manufactured. This second refraction member forming step is the same as the first refraction member forming step (the first embodiment forms the refraction member forming step, and is repeatedly polished while measuring the surface shape of each lens with an interferometer, so that each of the transparencies > & amp Dinghezhu ^^ "The surface shape is close to the target surface shape (best fit spherical shape is performed in this way, when the surface shape error of each lens falls within a specific range, and the first refractive member forming step (the refractive member forming step of the first embodiment) S4) Similarly, the surface shape error of each lens is measured using a precise interferometer device as shown in Fig. 9. In the second refractive member forming step S8, it is also necessary to repeatedly perform measurement and polishing until the measured surface shape can be measured. It conforms to a specific range. Next, refer to FIG. 13 for explanation of the assembly process of the first embodiment: FIG. 13 is a flowchart showing the details of the assembly process S5 of the projection optical system manufacturing method of the second embodiment. A general flowchart A diamond block is used to represent the judgment process', but for the convenience of illustration, the judgment process is represented by a hexagon in FIG. 13 (for example, 13 of 3514, S517, s522, MU, S532) 〇 (Step S510) In step S5 10, according to the crystal axis measurement step S3, the crystal axis of the refracting member made of the material of. For the information, the surface shape and surface spacing of the processed refracting member measured in step S4 of the first refracting member 2 are sufficient, and the birefringence measurement step is used to measure the refracting member made of amorphous material. Of the refractive index and distribution of birefringence and the distribution of birefringence, and the information about the shape and spacing of the processed refractive members measured in the first refractive member forming step S8; and by using an electronic computer 571344 A7
的模擬操作來預測使用具有這些參數(面形狀、面間 = :::=、晶軸方位、雙折射量、雙折射分布等) 《先予構:而組裝投影光學系統時所能獲得之光學性能。 j體而t,首先,依照以設計工序S1所得之設計數據而 叹疋投影光學系統之各光學構件參數後,I出將上述資訊 加上&各光學構件所得之投影光學系統光學性能。此時投 影光學系統光學性能之評估值,可使用上述之平均相位分 布、延遲分布、這些之RMS值、pSF值等。 (步驟S511) 在步驟S5 11,則以模擬操作求出經使由模擬方式所試裝 而成 < 各光學構件之間隔、相對於光軸之偏心量、光軸周 =又万位角(組裝角度)變化時之投影光學系統PL之光學性 月匕。按在經由上述工序S2〜S4、及S6〜S8製得之光學構件上 ,必定會造成折射率分布或雙折射分布之非均質性,或面 形狀、面間隔、及晶軸方位等製造誤差,因而只是改變光 學構件光軸周圍之方位角(組裝角度)一項,也足以使投影 光學系統PL之特性發生變化。因而在本工序則以能使光學 性能變得最佳之方式,使各光學構件之間隔及偏心量與組 裝角度予以最佳化。 (步驟S512) 在步驟S5 12,則根據經由模擬操作而獲得最佳化的光學 構件之間隔及偏心量與組裝角度,按照最佳化的光學構件 之間隔及偏心量與組裝角度使光學構件組裝於用來保持各 光學構件之鏡筒内。 —__ - 45 - 本紙張尺度適用中國國家標準(CNS) Α4規格(210 X 297公釐)Simulation operation to predict the use of these parameters (surface shape, inter-surface = ::: =, crystal axis orientation, birefringence, birefringence distribution, etc.) "Preconstruction: and the optical that can be obtained when the projection optical system is assembled performance. First, after sighing the parameters of the optical components of the projection optical system in accordance with the design data obtained in the design process S1, the optical performance of the projection optical system obtained by adding the above information to each optical component is given. At this time, the evaluation value of the optical performance of the projection optical system can use the above-mentioned average phase distribution, retardation distribution, RMS value, pSF value, etc. of these. (Step S511) In step S511, the simulation operation is used to obtain the distance between each optical member, the eccentricity with respect to the optical axis, and the perimeter of the optical axis. Optical angle of the projection optical system PL when the assembly angle is changed. According to the optical components prepared through the above steps S2 to S4 and S6 to S8, it will inevitably cause heterogeneity of refractive index distribution or birefringence distribution, or manufacturing errors such as surface shape, surface interval, and crystal axis orientation. Therefore, just changing the azimuth angle (assembly angle) around the optical axis of the optical component is enough to change the characteristics of the projection optical system PL. Therefore, in this step, the distance, the eccentricity, and the assembly angle of each optical member are optimized so as to optimize the optical performance. (Step S512) In step S512, the optical member is assembled according to the optimized interval and eccentricity of the optical member and the assembly angle obtained through the simulation operation, and the optical member is assembled according to the optimized interval and eccentricity of the optical member and the assembly angle. In the lens barrel used to hold each optical component. —__-45-This paper size applies to China National Standard (CNS) Α4 size (210 X 297 mm)
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(步驟S513) a在步驟S513,㈣用圖14所示之像差測定裝置而測定波 則像差。圖14所示之像差測定裝置係屬於利用相位恢復法 之原理者。如圖所其係使圖案⑹41之圖案形成面 疋位於投影光學系統PL之物體面,同時使物光學系统143 <前側焦點位置定位於投影光學系統PL之成像位置(像面) 然後以由照明光源140射出之照明光照明形成在圖案板 141之小孔(ρίη hole) 142 ,以產生理想的球面波。該理想的 求面波一通過投影光學系統pL,即將受到殘留於投影光學 系統PL之像差影響而使理想的球面之波前形狀產生變化。 以物光學系統143將通過投影光學系統凡之光加以聚光, 並以攝像元件144拍攝該像所得之攝像信號,其強度分布 會依照投影光學系統PL之殘餘像差而變化。因此對於含有 有關投影光學系統PL的殘餘像差資訊之圖像信號,實:根 據相位恢復法之特定的運算,便可求得投影光學系統凡之 殘餘像差。至於關於上述相位恢復法之詳細内容,請參閱 美國專利第4, 309, 602號公報之專利說明書等。 測疋投影光學系統PL之殘餘像差時,如圖丨4所示,不但 頊使形成在圖案板141之小孔142位於投影光學系統pL之光 軸Αχ上之情況下進行,也須在使小孔ι42位於與光軸Αχ成 正交的面内之複數個測定點之狀態下而進行波前像差之測 定。因而在本工序中則在與光軸ΑΧ成正交之面内邊使小孔 142之位置移動於測定點邊測定波前像差。但也可採取並 非移動圖案板141而在圖案板141形成複數個小孔,並在照 _________- 46 - 本紙張尺度適財Η ®家標準(⑽)Α4規格_(2ΐ()χ撕公爱)_(Step S513) a In step S513, the wave aberration is measured using the aberration measuring device shown in Fig. 14. The aberration measuring device shown in Fig. 14 belongs to the principle using the phase recovery method. As shown in the figure, the pattern forming surface of the pattern ⑹41 is located on the object surface of the projection optical system PL, and the object optical system 143 < the front focus position is positioned at the imaging position (image plane) of the projection optical system PL, and then illuminated by The illumination light emitted from the light source 140 illuminates a small hole 142 formed in the pattern plate 141 to generate an ideal spherical wave. As soon as this ideal surface wave passes through the projection optical system pL, it will be affected by the aberrations remaining in the projection optical system PL, and the ideal spherical wavefront shape will change. The object optical system 143 condenses light that has passed through the projection optical system, and the imaging signal obtained by photographing the image with the imaging element 144 will have its intensity distribution changed according to the residual aberration of the projection optical system PL. Therefore, for image signals containing residual aberration information about the projection optical system PL, according to a specific operation of the phase recovery method, the residual aberrations of the projection optical system can be obtained. For details of the phase recovery method described above, refer to the patent specification of U.S. Patent No. 4,309,602. When measuring the residual aberration of the projection optical system PL, as shown in FIG. 4, not only should the small hole 142 formed in the pattern plate 141 be positioned on the optical axis AX of the projection optical system pL, but also the The small hole ι42 is used to measure the wavefront aberration in a state where a plurality of measurement points are located in a plane orthogonal to the optical axis Ax. Therefore, in this step, the position of the small hole 142 is moved to the measurement point in the plane orthogonal to the optical axis AX, and the wavefront aberration is measured. However, instead of moving the pattern plate 141, it is also possible to form a plurality of small holes in the pattern plate 141, and according to _________- 46-This paper is suitable for financial standards ® Family Standard (⑽) A4 Specification _ (2ΐ () Love)_
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/1344/ 1344
^源140内设置用以限制照明區域之構件,而以一次只 照明一小孔之方式來測定波前像差之方法。 (步驟S514) 、、ί步驟S514,判斷是否可在投影光學系統像面上之所有 4疋點實施波前像差之測定。按圖14所示之像差測定裝置 :根據相位恢復法而對於以攝像元件144拍攝所得攝像信 號而實施特定的運算,以求出投影光學系統PL之殘餘像差 汪但是投影光學系統PL之殘餘像差若過於大,則相位恢復 /仍然無法使波前復原。於是在步驟SM4,則加以判斷所 ::定點是否可加以測定波前像差。結果,即使不能實施 、二測疋足測疋點被判斷為只有一個(判斷結果為「; 否」),也須將控制移至步驟S515。 (步驟S515) 敕在步驟S515 ’則至少執行各光學構件光軸方向之間隔調 2 :各光學構件光軸正交面内之位置調整(偏心調整)、及 *光學構件光軸周圍之方位角調整作業中之一項,藉以調 整投影士學系統之光學性能,然後將控制移至步驟二3。 反覆實施這些步驟S513〜S515 ’直至在步驟训被判斷 =在所有測定點實施像差料為止。此時若在步驟s5M 子判斷為可在所有測定點實施像差測定 :可」),則將控制移至步驟S516。 為 (步驟S516) 、^步驟S516’則使用上述像差測定裝置而測定 足波前像差。 -47 :297公釐) 本紙張尺度適標準見格(210: ^44A method for measuring the wavefront aberration is provided in the source 140 to limit the illumination area and to illuminate only one small hole at a time. (Step S514) Step S514 determines whether the measurement of the wavefront aberration can be performed on all 4 points on the image plane of the projection optical system. According to the aberration measuring device shown in FIG. 14: according to the phase recovery method, a specific operation is performed on the imaging signal obtained by the imaging element 144 to obtain a residual aberration of the projection optical system PL but a residual of the projection optical system PL If the aberration is too large, the phase is restored / still unable to restore the wavefront. Therefore, in step SM4, it is judged whether or not the fixed point can be used to measure the wavefront aberration. As a result, even if it is impossible to carry out the test, and the second test point is judged to be only one (the judgment result is "; No"), control must be moved to step S515. (Step S515) 敕 At step S515 ', at least the interval adjustment of the optical axis direction of each optical component is performed 2: the position adjustment (eccentricity adjustment) in the orthogonal plane of the optical axis of each optical component, and the azimuth around the optical axis of the optical component Adjust one of the tasks to adjust the optical performance of the projection scholarship system, and then move the control to step 2 and 3. These steps S513 to S515 are repeatedly performed until it is judged in the step training = aberration material is implemented at all measurement points. At this time, if it is determined in step s5M that the aberration measurement can be performed at all measurement points: OK "), control is transferred to step S516. (Step S516) and (Step S516 '), the aberration of the foot wavefront is measured using the aberration measuring device described above. -47: 297 mm) This paper has a standard size (210: ^ 44
(步驟S517) 在步驟S517,則判斷經由步驟3516所測得波前像差是否 在於特疋的規格内。本步驟S5 17係用以判斷投影光學系統 之光學性能疋否已調整成足可供於實施後述高精度的像差 J足之权度。該判斷結果若為r NG」,則將控制移至步驟 s5 1 8,判Wf結果若為「〇κ」,則將控制移至步驟19。 (步驟S518) 在步驟S518,則至少執行各光學構件光軸方向之間隔調 整、各光學構件光軸正交面内之位置調整(偏心調整)、以及 各光學構件光軸周圍之方位角調整作業中之一項,藉以調 I技〜光學系統之光學性能,然後將控制移至步驟$ 5 16。 (步驟S519) 反覆執行上述步驟S516〜S518,當使投影光學系統之光 學性能調整成足可供於實施後述高精度的像差測定之層次 時,則將控制移至步驟S 5 19。 琢步驟S519,係使用例如日本專利特開平第i 〇_38757號 公報所揭露之斐索干涉儀方式之波前像差測定機,或曰本 專利特開第2 000-9761 6號公報所揭露之PDI (相位繞射干涉 儀;Phase Diffraction Interferometer)方式之波前像差測定 機而實施高精度的波前像差測定。 此時,在本實施形態則對於投影光學系統按複數個偏光 成分各個而實施波前像差之測定,具體而言,可使用上述 之XY偏光成分或R0偏光成分等。另在本實施形態也可取 代按複數個偏光成分各個之波前像差測定,或再加上而實 -48 - 本纸張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 571344 A7(Step S517) In step S517, it is determined whether or not the wavefront aberration measured through step 3516 is within the specifications. This step S5 17 is used to determine whether the optical performance of the projection optical system has been adjusted to be sufficient for implementation of the high-precision aberration J foot described below. If the determination result is r NG ”, control is shifted to step s5 1 8, and if the determination Wf result is“ 0 κ ”, control is shifted to step 19. (Step S518) In step S518, at least the interval adjustment of the optical axis direction of each optical member, the position adjustment (eccentricity adjustment) in the orthogonal plane of the optical axis of each optical member, and the azimuth adjustment around the optical axis of each optical member are performed. One of them, to adjust the optical performance of the optical system to the optical system, and then move the control to step $ 5 16. (Step S519) The above-mentioned steps S516 to S518 are repeatedly performed. When the optical performance of the projection optical system is adjusted to a level sufficient for performing aberration measurement with high precision described later, control is shifted to step S519. Step S519 is performed using a wavefront aberration measuring machine such as the Fizeau interferometer method disclosed in Japanese Patent Laid-Open No. i 0-38757, or disclosed in Japanese Patent Laid-Open No. 2 000-9761 6. A PDI (Phase Diffraction Interferometer) method is used to measure the wavefront aberrations with high accuracy. In this case, in this embodiment, the wavefront aberration is measured for each of the plurality of polarization components of the projection optical system. Specifically, the above-mentioned XY polarization component or R0 polarization component can be used. In addition, in this embodiment, it can also replace the wavefront aberration measurement of each of the plurality of polarized components, or it can be added to it -48-This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 571344 A7
她使用非偏光成分(例如同時使用上述χγ偏光成分、汉0偏 光成分)之測定。 (步驟S520) 在步驟S520,則對於經測得之波前像差實施澤爾尼克 (^ernicke)的圓筒函數系Ζη ㈦之擬合(Fiuing),求出按 每一項之展開係數,而算出波前像差之各成分(必要時也算 出按偏光各個之波前像差各成分)。 茲將使用澤爾尼克的圓筒函數系Zn (p、…之波前像差擬 合扼要說明如下。 首先設足射出面上之極座標,並以w (p、㈥代表波前像 是。其中p為將射出瞳面PS規格内成為1的規格化瞳半徑, β為極座標之矢量角。接著,使用澤爾尼克的圓筒函數系 Ζη(ρ、0),使波前像差w(p、㈦展開成如下列⑹式所示: ⑹ W (ρ、θ) =Σ(:ηΖη (ρ、Θ) =C1Z1 (p、0) + C2Z2 (p、0)+… •••+CnZn (p、0) 另外,關於有關澤爾尼克的圓筒函數系Zn⑺、㈦之各項 的圓筒函數系,由於其係已為眾所周知,不加詳細說明f 接著,在本實施形態之投影光學系統中,設有外部調整 裝置,俾將投影光學系統搭載於曝光裝置本體之後也可再 加以調整光學性能(倍率、像差等)。這樣的外部調整裝置 可使用諸如:以致動器控制、或以手動調整用以構成投影 光學系統的光學構件之裝置•姿勢之裝置,或使用以構成 投影光學系統的光學構件中最位於第一面侧及/或第二面侧 -49 - 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公釐) 571344 五、發明説明(47 ) 之光學構件,與具有與該光學構件互異的光學特性之光學 構件交換之裝置等。 μ以下參閱圖15就外部調整裝置扼要說明如下。本實施形 怨心投影光學系統,雖係屬將複數個光學構件2丨〜27沿著 光軸方向(Ζ方向)而配置之構成,但位於最第一面R側之光 學構件21與位於最第二面w側之光學構件22,卻可相對於 投影光學系統PL之本體而交換自如。而且複數個光學構件 中五個透鏡23〜27係各自可由致動器28〜32來調整其沿光軸 方向(Z方向)、及沿著以與該光軸成正交的方向(χγ方向)為 ,的回轉方向(ΘΧ、0y方向)之位置。其中用以保持位於最 第二面W側之光學構件22的保持構件33 ,係構成為可相對 於構成投影光學系統pL的鏡筒之一部分34而裝卸自如。 在本實施形態,由於五個透鏡各自的位置可朝z方向、ex 方向、及0y方向調整自如,因而可補正五個回轉非對稱像 差(倍率、低次畸變、低次彗形像差、低次像面彎曲及低次 球面像差)。此外在本實施形態則將五個透鏡構成為位置$ 自由調整,但位置可自由調整的透鏡數並非局限於五個。 另外在本貫施开》恐則將位於最第一面R側之光學構件及 位於最第二面W側之光學構件中至少一方,構成為可與具 有與該光學構件互異的雙折射量及雙折射分布之光學構件 父換自如。該光學構件可適用經由與上述結晶材料準備工 序S2、晶軸測定工序S3及第一折射構件形成工序S4相同= 製造方法所製造之等軸晶系結晶材料(例如螢 > ,, 七 虱化鋇) ,或經由與上述非晶材料準備工序S6、雙折 ___- 50 - 本紙張尺度適用㈣S家標準(CNS) A4規格(21GX297公爱) ^1344She uses non-polarized light components (for example, the above-mentioned χγ polarized light component and Han0 polarized light component). (Step S520) In step S520, a fitting of the cylindrical function system Zη ㈦ of Zernicke (Fiuing) is performed on the measured wavefront aberration, and the expansion coefficient for each term is obtained, Then, each component of the wavefront aberration is calculated (if necessary, each component of the wavefront aberration by polarized light is also calculated). The wavefront aberration fitting of Zernike's cylindrical function system Zn (p, ... is briefly described below. First set the polar coordinates on the emission surface, and let w (p, ㈥ represent the wavefront image. Among them p is the normalized pupil radius where the exit pupil surface PS specification becomes 1. β is the vector angle of the polar coordinates. Next, using Zernike's cylindrical function system Zη (ρ, 0), the wavefront aberration w (p , ㈦ is expanded as shown in the following formula: ⑹ W (ρ, θ) = Σ (: ηZη (ρ, Θ) = C1Z1 (p, 0) + C2Z2 (p, 0) + ... ••• + CnZn ( p, 0) In addition, since the cylindrical function system related to Zernike's cylindrical function system Zn⑺ and 各项 is well known, it will not be described in detail f. Next, the projection optical system of this embodiment There is an external adjustment device, and the optical performance (magnification, aberration, etc.) can be adjusted after the projection optical system is mounted on the exposure device body. Such external adjustment devices can be controlled by actuators, or A device for manually adjusting the postures of the optical components constituting the projection optical system, or a device Among the optical components constituting the projection optical system, the most side is located on the first side and / or the second side -49-This paper size applies the Chinese National Standard (CNS) A4 specification (210X 297 mm) 571344 5. Description of the invention (47 ) And other optical components that have optical characteristics that are different from the optical component, etc. μ The external adjustment device is briefly described below with reference to FIG. 15. This embodiment of the grudge projection optical system is a The plurality of optical members 2 丨 to 27 are arranged along the optical axis direction (Z direction), but the optical member 21 on the R side of the first surface and the optical member 22 on the w side of the second surface may be opposite to each other. The projection optical system PL can be exchanged freely. Moreover, the five lenses 23 to 27 of the plurality of optical components can be adjusted by the actuators 28 to 32 along the optical axis direction (Z direction), and along with the The direction in which the optical axis is orthogonal (χγ direction) is the position of the rotation direction (Θχ, 0y direction). Among them, the holding member 33 for holding the optical member 22 on the W side of the second surface is configured to be opposite to each other. In composition One part 34 of the lens barrel of the shadow optical system pL can be freely attached and detached. In this embodiment, since the positions of the five lenses can be freely adjusted in the z direction, the ex direction, and the 0y direction, five rotational asymmetric aberrations can be corrected (Magnification, low-order distortion, low-order coma aberration, low-order image plane curvature, and low-order spherical aberration.) In addition, in this embodiment, five lenses are configured as positions $, which can be freely adjusted, but the positions can be freely adjusted. The number of lenses is not limited to five. In addition, in this book, at least one of the optical member on the R side of the first surface and the optical member on the W side of the second surface is configured to be compatible with The optical components with different birefringence and birefringence distribution of the optical components can be changed freely. This optical member can be applied through the same steps as the above-mentioned crystalline material preparation step S2, crystal axis measurement step S3, and first refractive member formation step S4 = an equiaxed crystal-based crystalline material (e.g., fluorescein> Barium), or through the preparation process S6 with the above-mentioned amorphous material, double folding ___- 50-This paper size applies ㈣S Standard (CNS) A4 specification (21GX297 public love) ^ 1344
S7及第一折射構件形成 晶材料(石英、改性石英) 另外,關於位於最第一面尺側之光學構件及/或位於最 二面w側之光學構件,則以使其ΧΥ平面内之位置、 万向炙傾斜度、ζ方向之位置可相對於投影光學系 y 作調整為宜。若依照此構成,例如在投影光學系統P 回轉非對稱的偏光像差,則可將具有特定的折射率分^之 1學構件21或22之位置.姿勢加以調整,而補正回轉非對 稱的偏光像差。此時位於最第二面w側之光學構件若為平 仃平面板’則調整該θχ、方向之傾斜度即可補正偏心 彗形像差。另外若調整位於最第二面w側之光學構件而變 f其折射力(與折射力不同的光學構件互換),則可調整= 心光學系統PL之j白玆伐和(petzvai sum)。 再者,圖15中雖未圖示,在構成投影光學系統PL的光學 構件尤一部分設置複曲面(t〇ric surface)形狀之光學面(折射 面、反射面等),而調整該光學構件之光軸Αχ周圍之方位 角,即可補正光軸上像散現象(astigmatism)。 (步驟S521) 請再參閱圖13,在步驟S521,投影光學系統若具有經由 步驟S520算出之波前像差之各成分值,則以模擬操作預測 經使用上述外部調整裝置而調整後之波前像差(或波前像差 之各成分)。具體而言,其係以經算出的波前像差之各成分 值為出發點,使外部調整裝置之參數(透鏡23〜27之移動量 、光學構件21及/或22之面形狀、折射率、折射率分布、雙 -51 - 本紙張尺度適财國國家標準(CNS) A4規格(21GX 297公 571344 A7 -_________B7 五、發明説明(49 ) 折射量、雙折射分布)最佳化,並求出徑最佳化後在模擬操 作上的投影光學系統之像差。 另外在外邵整裝置,若不予交換雙折射量及分布互異 的光學構件’要預測之波前像差可只以標量成分為其對象。 (步驟S522) 在步驟S522,則判斷經由模擬操作所預測的像差是否在 於特定的範圍内。該步驟3522之判斷結果若為「恥」,則 將控制移至步驟S523。反之,在該步驟S522之判斷結果若 為「0K」,則將控制移至步驟S529。 (步驟S523) 、在步驟S523,則判斷是否可藉由實施各光學構件之光軸 方向間隔#1整、各光學構件之光軸正交面内之位置調整(偏 〜凋整)、以及各光學構件光軸周圍之方位角調整而補正前 f步驟S 5 2 2所預測之像差。該步驟s 5 2 3之判斷結果若為 〇Κ」,則將控制移至步驟S524 ,反之,判斷結果若為「ng」 ’則將控制移至步驟S525。 (步驟S524) 在步驟S524,則至少調整各光學構件光軸方向之間隔調 整、各光學構件光軸正交面内之位置調整(偏心調整)、以 及各光學構件光軸周圍之方位角調整作業中之一項,藉以 修正投影光學系統之像差,然後將控制移至步驟S5l6。 按這些步驟S5 16〜S524 ,係用來求出在無須對投影光學 系統之光學構件形成非球面,或交換為互異的雙折射分布 之光學構件下,究竟可將投影光學系統之光學構件改善到S7 and the first refracting member form a crystalline material (quartz, modified quartz). In addition, regarding the optical member on the ruler side of the first surface and / or the optical member on the w side of the second surface, the The position, gimbal tilt, and position in the ζ direction may be adjusted relative to the projection optical system y. If this configuration is adopted, for example, the asymmetrical polarization aberration is rotated in the projection optical system P, the position of the 1st structural member 21 or 22 having a specific refractive index ^ can be adjusted, and the rotationally asymmetric polarization can be corrected. Aberration. At this time, if the optical member located on the w side of the second surface is a flat plane plate ', adjusting the inclination of θχ and the direction can correct the eccentric coma aberration. In addition, if the optical component on the w side of the second surface is adjusted to change its refractive power (interchangeable with optical components with different refractive powers), it can be adjusted = j whitezval sum of the optical system PL. Furthermore, although not shown in FIG. 15, a toric surface optical surface (refractive surface, reflective surface, etc.) is provided on a part of the optical member constituting the projection optical system PL, and the optical member is adjusted. The azimuth around the optical axis Aχ can correct astigmatism on the optical axis. (Step S521) Please refer to FIG. 13 again. In step S521, if the projection optical system has each component value of the wavefront aberration calculated in step S520, the wavefront adjusted by using the external adjustment device described above is predicted by simulation operation. Aberrations (or components of wavefront aberrations). Specifically, it is based on the calculated component values of the wavefront aberrations as starting points for parameters of the external adjustment device (the amount of movement of the lenses 23 to 27, the surface shape of the optical members 21 and / or 22, the refractive index, Refractive index distribution, bi-51-This paper is compliant with National Standards (CNS) A4 specifications (21GX 297 public 571344 A7 -_________ B7 V. Explanation of the invention (49) Refractive index, birefringent distribution) is optimized and calculated The aberration of the projection optical system in the simulation operation after the diameter is optimized. In addition, in the external shading device, if the birefringence and the optical components with different distributions are not exchanged, the wavefront aberration to be predicted can be only a scalar component. (Step S522) In step S522, it is determined whether the aberration predicted by the simulation operation is within a specific range. If the result of the determination in step 3522 is "shame", control is transferred to step S523. Otherwise, If the judgment result in this step S522 is "0K", then control is moved to step S529. (Step S523) In step S523, it is judged whether or not the optical axis direction interval # 1 of each optical component can be adjusted by implementing, Of optical components The position adjustment (deflection ~ correction) in the orthogonal plane of the axis and the adjustment of the azimuth angle around the optical axis of each optical component correct the aberrations predicted in the front f step S 5 2 2. The judgment result of this step s 5 2 3 If it is “OK”, then control is moved to step S524, otherwise, if the judgment result is “ng”, then control is moved to step S525. (Step S524) In step S524, at least the optical axis direction of each optical component is adjusted. Adjusting the interval, adjusting the position in the plane orthogonal to the optical axis of each optical component (eccentricity adjustment), and adjusting the azimuth angle around the optical axis of each optical component to correct the aberration of the projection optical system, and then moving the control Go to step S516. According to these steps S5 16 ~ S524, it is used to find out whether the projection optical system can be used without forming an aspheric surface on the optical component of the projection optical system or exchanging the optical component with a different birefringence distribution. Optical components improved to
571344 A7 B7 五、發明説明(50 ) 何種程度之工序。 若在上述步驟S523若被判斷為僅依賴光學構件之間隔調 整、偏心調整及方位角調整,仍然不可能修正經被判為規 格外的像差,則將控制移至下列步驟S525。 (步驟S525) 在步驟S525,則以模擬操作預測經實施各光學構件光軸 方向之間隔調整、各光學構件光軸正交面内之位置調整(偏 心凋整)、以及各光學構件光軸周圍之方位角調整後之波前 像差(或波前像差之各成分,必要時則按每偏光的波前像差 之各成分)。 具體而t,以、經算出的波前像差之各成分值4出發點, 並以各光學構件之間隔調整量、偏心調整量、及方位角調 整量作為參數而使之最佳化,然後求出經最佳化後的投影 光學系統之像差。 (步驟S526) 在步驟S526’則算出可供補正經在步驟⑽所預測之投 =學系統的殘餘像差(“之殘餘成分)之非球面形狀及/ :戈:折射分布。在本工序S526,可按照欲補正的像差而選 ^要形成非球面之光學構件及/或變更雙折❹布之 件0 圖⑽』以說明供形成非球面之光學構件及/或供變更雙 λ略學構件圖。於圖16所示之投影光學系統凡係 :之光::::其第一面"側依序設有具有負向折射 先予構件…具有正向折射力之光學構件e2,具有自 η張尺度適用 裝 訂 53 - X 297^57 571344 A7 ____ B7 五、發明説明(5彳) 向折射力之光學構件e3,具有孔徑光闌人3及正向折射力之 光學構件e4。 兹就來自於第一面R上之兩個互異的物點Ql、Q2之光, 通過投影光學系統PL時之光路說明如下。圖中符號u為由 物點Q1射出的光束之光路,而符號匕2為由物點㈨射出的光 束之光路。來自於位於光軸Αχ與第一面r之交又點的物點 Q1之光,每通過光學構件el〜e4時就受到發散或聚焦作用 而成像於光軸Αχ與第二面w之交叉點。假設光學構件 el〜e4之有效徑為多1〜04。另外假設通過各光學構件ei〜e4 時的光束L1之光束徑為0L1 1〜0L1 4,通過各光學構件 el〜e5時的光束L2之光束徑為0L2 1〜0L2 4。 就光束LI、L2通過光學構件ei時之光路來說,相對於光 學構件el之有效徑的光束徑0L1 1之比及相對於光學構 件el之有效徑的光束徑0L2 1之比為大約〇·25左右,且光 束L1通過光學構件el之位置與光束L2通過光學構件el之位 置係互不相同。另方面,就光束L1、L2通過光學構件e4時 之光路來說,相對於光學構件e4之有效徑04的光束徑多L1 5 之比及相對於光學構件e4之有效徑04的光束徑卢L2 4之比為 大約接近於1之值,且光束L1通過光學構件e4之位置與光 束L2通過光學構件e4之位置係大約相同。 因此,在步驟S526算出投影光學系統PL内的光學構件之 非球面時,及算出投影光學系統PL内之雙折射量及分布時 ,應加以考量前以圖16所說明光束之通過路徑而選取能有 效地補正像差之光學構件。 -54 - 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 571344 A7 __ B7 五、發明説明(52 ) 例如,欲補正像面座標依存性高的像差(畸變、像面-曲 等之標量像差、按照像面座標而異的偏光像差(雙折射之影 響))時,若在供來自於物點Q 1之光束L1及來自於物點Q2之 光束L2會通過位置分開的光學構件ei之光學面(透鏡面、反 射面等)上設置非球面,或是變更光學構件e丨之雙折射分布 時’即可有效地補正像面座標依存性高的像差。 欲補正瞳座標依存性高的像差(例如球面像差、偏心聋形 像差等之標量像差、像面座標依存性少的偏光像差(雙折射 之影響))時,若在供來自於物點Q 1之光束L丨及來自於物點 Q2之光束L2大致會通過全面之光學構件以之光學面上設置 非球面,或是變更光學構件e4之雙折射分布時,即可有效 地補正瞳座標依存性高的像差。 至於欲補正像面座標依存性及瞳座標依存性接近同等的 像差(例如_:形像差等)時,則在來自於物點q 1之光束^ 1 及來自於物點Q2之光束L2之重疊度為居於中間的光學構 件(例如光學構件e2等)之光學面設置非球面,或是變更來 自於物點Q1之光束L1及來自於物點q2之光束L2的重疊度為 居於中間的光學構件(例如光學構件e2等)之雙折射分布, 即可有效地補正像面座標依存性及瞳座標依存性接近同等 程度的像差。 因此,在步驟S526,為補正標量像差,則應以在投影光 學系統PL之複數個光學構件el〜e4*至少就三個光學構件 之光學面而算出非球面形狀為宜。至於偏光像差(雙折之射 影響)之補正,則由於多半會發生瞳座標依存性高(像面座 -55 -571344 A7 B7 V. Description of the invention (50) To what extent is the process. If it is judged in the above step S523 that it is impossible to correct only the aberrations judged to be abnormal depending on the interval adjustment, eccentricity adjustment and azimuth adjustment of the optical components, then control is transferred to the following step S525. (Step S525) In step S525, a simulation operation is performed to predict the interval adjustment of the optical axis direction of each optical member, the position adjustment (eccentric correction) in the orthogonal plane of the optical axis of each optical member, and the periphery of the optical axis of each optical member. The wavefront aberration (or components of the wavefront aberration after adjustment of the azimuth angle, if necessary, the components of the wavefront aberration per polarized light). Specifically, t is optimized by taking the starting point of each component value of the calculated wavefront aberration as 4 and using the interval adjustment amount, eccentricity adjustment amount, and azimuth adjustment amount of each optical member as parameters to optimize it, and then The aberrations of the optimized projection optical system are shown. (Step S526) In step S526 ', the aspherical shape of the residual aberration ("residual component") of the investment system predicted in step ⑽ can be calculated and the aspheric shape and /: Ge: refraction distribution. In this step S526 According to the aberrations to be corrected, you can choose ^ aspherical optical members and / or change the bi-folded cloth 0 Figure ⑽ '' to explain the aspherical optical members and / or change the double lambda Component diagram. The projection optical system shown in FIG. 16 is the light of :::: The first side of the " side is provided with a pre-reflective member with negative refraction ... an optical member e2 with positive refraction, Binding with self-n-size scale 53-X 297 ^ 57 571344 A7 ____ B7 V. Description of the invention (5 彳) Optical member e3 with refractive power, optical member e4 with aperture stop 3 and positive refractive power. The light path from the two different object points Q1, Q2 on the first surface R when passing through the projection optical system PL is described below. The symbol u in the figure is the light path of the light beam emitted from the object point Q1, and the symbol Dagger 2 is the light path of the light beam emitted from the object point。 from the optical axis The light at the point Q1 at the intersection of χ with the first surface r is diffused or focused every time it passes through the optical members el to e4 and is imaged at the intersection of the optical axis Aχ and the second surface w. Assume that the optical member el The effective diameter of ~ e4 is more than 1 ~ 04. In addition, the beam diameter of the light beam L1 when passing through each optical member ei ~ e4 is 0L1 1 ~ 0L1 4, and the beam diameter of the light beam L2 when passing through each optical member el ~ e5 is 0L2 1 ~ 0L2 4. In terms of the optical path when the light beams LI and L2 pass through the optical member ei, the ratio of the beam diameter 0L1 1 to the effective diameter of the optical member el and the beam diameter 0L2 1 to the effective diameter of the optical member el The ratio is about 0.25, and the position of the light beam L1 passing through the optical member el and the position of the light beam L2 passing through the optical member el are different from each other. On the other hand, as for the light paths when the light beams L1 and L2 pass through the optical member e4, the relative The ratio of the beam diameter L1 5 of the effective diameter 04 of the optical member e4 and the ratio of the beam diameter L2 4 to the effective diameter 04 of the optical member e4 is approximately close to 1, and the beam L1 passes through the optical member e4. The position is approximately the same as the position where the light beam L2 passes through the optical member e4. Therefore, when calculating the aspheric surface of the optical member in the projection optical system PL in step S526 and calculating the birefringence amount and distribution in the projection optical system PL, it should be selected by considering the passage path of the light beam illustrated in FIG. 16 before taking into consideration Optical components that can effectively correct aberrations. -54-This paper size applies Chinese National Standard (CNS) A4 specifications (210 X 297 mm) 571344 A7 __ B7 V. Description of the invention (52) For example, to correct the image plane coordinates In the case of highly dependent aberrations (scalar aberrations such as distortion, image plane-curvature, and polarized aberrations (effect of birefringence) according to image plane coordinates), if the beam L1 from the object point Q 1 is supplied, And the light beam L2 from the object point Q2 will pass through the aspheric surface of the optical member (lens surface, reflective surface, etc.) of the separated optical member ei, or change the birefringence distribution of the optical member e. Correct aberrations with high image plane dependency. If you want to correct aberrations with high pupil coordinate dependence (for example, scalar aberrations, eccentric deafness aberrations, scalar aberrations, etc., polarizing aberrations with less image plane dependence (the effect of birefringence)), The light beam L 丨 at the object point Q1 and the light beam L2 from the object point Q2 will pass through the comprehensive optical member to set an aspheric surface on the optical surface, or change the birefringence distribution of the optical member e4, which can effectively Correct aberrations with high pupil coordinate dependence. As for the correction of image plane dependency and pupil coordinate dependency close to the same aberration (such as _: shape aberration, etc.), the beam ^ 1 from the object point q 1 and the beam L 2 from the object point Q 2 The degree of overlap is aspherical on the optical surface of the intermediate optical member (such as optical member e2, etc.), or the degree of overlap of the light beam L1 from the object point Q1 and the light beam L2 from the object point q2 is changed to be intermediate. The birefringence distribution of the optical member (such as the optical member e2, etc.) can effectively correct aberrations of image plane dependency and pupil coordinate dependency close to the same degree. Therefore, in step S526, in order to correct the scalar aberration, it is appropriate to calculate the aspheric shape on the optical surfaces of at least three optical members of the plurality of optical members el to e4 * in the projection optical system PL. As for the correction of polarized aberrations (the effect of birefringence), most of them will have high pupil coordinate dependence (image plane -55-
五、發明説明(53 ) 之影響),因而應以在投 el〜e4中至少就一個光學 標依存性低的)的偏光像差(雙折射 影光學系統PL之複數個光學構件 構件而算出雙折射量及分布為宜。 由具有如上述雙折射量及分布的非曰 从 、、,, ^ 9日材料構成之光學掮 件’ 1又孩光學構件之有效徑為卜由第上之特定的 -點發出之光束通過該光學構件時之光束徑為打時,應以 使其配置在可滿足下列條件式之位置為宜。 (7) 0.6< φρ/φ〇£ 1 如此,使具有特定的雙折射分布之光學構件配置於能滿足 式⑺之位置,即可有效地補正起因於由料晶系結晶材料 構成之折射構件的偏光像差(雙折射之影響)。若欲得更佳 的偏光像差(雙折射之影響)補正效果,則將上述式(7)之下 限設定為0.7即可。 另外,由具有用來補正瞳座標依存性高的(像面座標依存 性低的)偏光像差(雙折射之影響)所需雙折射量及分布的非 晶材料構成之光學構件,應以使其配置在距自投影光學系 統之瞳位置為15 0 mm以内之位置為宜。 並且若欲更有效地補正彗形像差等像面座標依存性及瞳 座標依存性接近同等程度的像差,則以算出關於來自於物 點Q1之光束L1及來自於物點Q2之光束L2的重疊度為居於中 間的兩個光學構件之光學面的非球面形狀為宜,因此在步 驟S526則應以在投影光學系統PL之複數個光學構件el〜e4 中至少就四個光學構件之光學面而算出非球面形狀為宜。 另外,形成於光學構件el〜e4之非球面,可使用相對於 -56 - 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 571344 五、發明説明(54 ,為對稱或非對稱中之任一。更也可按照所發生之像 二不規則地(P近機地)形成非球面。同樣地,設在光學構 對^ φ64《雙折射分布’也可為相對於光軸Ax為對稱或非 目“:二任一。更也可按照所發生之偏光像差而具有不規 J的(Ik機的)雙折射分布。 按經由步驟S526算出 > 非I 丁 一 异出又非球面以及雙折射量及分布,並 不一疋是局限於以補正所有 像差為目的去,品、 先學系統PL之波前 的為只用以補正特定的殘餘像差為目 可不、,⑽& 血 Ί周正裝置加以補正之波前像差則 | ^ ,驟S526實施補正,而也可以外部調整裝 置來加以補正。另外在措與 I月正衮 ,鑒於成像性fFT, 之殘餘波前像差中 二成像m予以忽視者,則可不 面或賦予雙折射分布措施而補正。 i成非球 (步驟S527) 請再參閱圖13,在步驟S527 光學構件之光學面β κ Α 田文驟S526選擇的 S526置透 射面等),加工成經由步驟 S526异出的非球面形狀。若田’ % 構件之#加舡音八士 7 ^ S526 乂更特疋的光學 布’則準備具有經由步_6算出的; 斤射!及分布《光學材料而實施㈣學材料勺雙 (步驟S528) 及^具:二形狀的非球面之光學構件 學系統。此時雖有可 組裝誤差不可能大# Α ^ 〃 仁此時所發生之 了此大…以圖14所示像差測定裝置加以剛 1-—______ - 57 本紙張尺度適兩s辦 571344V. The effect of invention description (53)), so the polarization aberration (a plurality of optical components of the birefringence optical system PL should be calculated based on at least one optical standard with low dependency on the el to e4). The amount of refraction and distribution are suitable. An optical element made of a material having a birefringence amount and distribution as described above is not specified, and the effective diameter of the optical member is specified by the first -When the light beam emitted from the point passes through the optical member, the beam diameter should be set so that it can be arranged at a position that can satisfy the following conditional expression. (7) 0.6 < φρ / φ〇 £ 1 The birefringence distribution of the optical member is arranged at a position that satisfies the formula (2), which can effectively correct the polarization aberration (the effect of birefringence) caused by the refractive member composed of the crystal material of the material crystal system. For the correction effect of polarization aberration (the effect of birefringence), it is sufficient to set the lower limit of the above formula (7) to 0.7. In addition, polarized light having a high dependence on pupil coordinates (low dependence on image plane coordinates) can be used. Aberration (of birefringence Impact) The optical component made of amorphous material with the required birefringence and distribution should be placed within 150 mm from the pupil position of the self-projection optical system. And if you want to correct the comet more effectively If the aberrations of image plane coordinates such as shape aberration and pupil coordinates are close to the same degree, the overlap between the light beam L1 from the object point Q1 and the light beam L2 from the object point Q2 is calculated as the middle two. The aspheric shape of the optical surface of each optical component is appropriate, so in step S526, it is appropriate to calculate the aspheric shape of at least four optical components of the plurality of optical components el to e4 of the projection optical system PL. In addition, the aspheric surface formed on the optical member el ~ e4 can be used relative to -56-This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) 571344 5. Description of the invention (54, symmetrical or non-symmetrical) Any one of the symmetry. It can also form an aspheric surface irregularly (P near the ground) according to the occurrence of the second image. Similarly, set the optical configuration pair φ64 "birefringence distribution" can also be relative to the optical axis Ax is right Or non-eye ": Any of the two. It can also have an irregular J (Ik machine) birefringence distribution according to the polarization aberrations that occur. Calculate via step S526 > Non-I Ding is different and aspherical And the amount and distribution of birefringence are not limited to the purpose of correcting all aberrations. The wavefront of the PL system of the prior learning system is only used to correct specific residual aberrations. ⑽ & Blood ΊThe correction of the wavefront aberration by the Zhouzheng device is | ^, and the correction is performed in step S526, but it can also be adjusted by an external adjustment device. In addition, in the month of January, due to the imaging fFT, the residual wavefront aberration is If the two imaging m are ignored, they can be corrected without facing or giving a birefringence distribution measure. i into aspheric (step S527) Please refer to FIG. 13 again. In step S527, the optical surface β κ Α of the optical component is selected by S526 (transmitting surface of S526, etc.), and processed into an aspheric shape that is different from step S526. If the field ’% building block # 加 舡 音 八 士 7 ^ S526 乂 更 特 疋 的 布布’, it is ready to have calculated by step _6; Jin shot! And the distribution of "optical materials" (step S528) and the implementation of optical materials (two steps): a two-shape aspherical optical component system At this time, the assembly error is unlikely to be large # Α ^ 〃 Ren This is what happened at this time ... Use the aberration measuring device shown in Figure 14 to fix it 1 ---______-57 This paper is suitable for two scales 571344
:《地步,因而在本實施形態則將控制移 (步驟S529) 的=t”S522,,㈣模擬操作_之像差若在於特定 手=内(判斷結果為「οκ」時),則其係意味著投影光學 系光學特性已調整成可由外部調整裝置加以微調整 =度,因而實施外部調整裝置之安裝,與其初始調整 (initial adjustment) 〇 ’、中夕卜#凋整裝置《初始調整係執行圖所示之致動 器28〜32對於控制信號的回應量之調整處理。具體而今, 例如由未圖示的控制系統對致動器28〜32輸出應增長(_ 《控制信號時,致動器28〜32仍有*能依照控制信號之指 =而增長i _之情況,因而需調整相對於控制系統的控制 量之致動器28〜32之回應量。惟由於由控制系統輸出之控 制k號係用以使投影光學系統之光學性性能可變之信號, 因此泫初始凋整就是用以求出藉外部調整裝置之調整量與 投影光學系統PL之性能變化量間的相關之處理。惟若裝有 致動器28〜32時,則只執行使用外部調整裝置之調整。 (步驟S530) 上撥步驟S529—結束,則使用曾在上述步驟S516所用之 波前像差測定機而實施波前像差測定。此時也可與上述步 驟S520同樣地執行對於經測得之波前像差實施澤爾尼克的 圓筒函數系Ζη (ρ、Θ)之擬合,求出按每一項之展開係數Cn (澤爾尼克係數),而算出波前像差各成分之處理。 (步驟S531) -58 - 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 571344 A7 B7 五、發明説明(56 ) ---- 以上之步驟S530—結束,則判斷投影光學系統之像差是 否在於規格内。步驟3531之判斷結果若為「ng」,則將控 制移至步驟S532,反之,步驟3531之判斷結果若為「〇κ」 ’投影光學系統PL之製造即告一段落。 (步驟S532) 在步知S52,則執行使用上述外部調整裝置之調整後, 將控制移至步驟S529。在此則反覆實施步驟s529〜s532, 直至步驟S531之判斷結果變為r〇K」為止· 再者,在前面所述第二實施形態之組裝工序,雖實施了 使用複數個偏光成分的波前像差之調整,但也可只使用非 2光成分而測定波前像差。此時,由於只有波前像差之標 里成分為已知,因而只求得會影響到波前像差之偏光成分 的光學構件之參數,與波前像差之標量成分之相關關係後 ’根據該相關關係而在各步驟中實施光學構件之參數變更 即可。 综上所述,若依照第二實施形態之投影光學系統之製造 方法則由於可邊就複數個偏光成分而評估起因於例如營 石或氧化鋇等之等軸晶系結晶材料的雙折射影響,邊使由 違等軸晶系結晶材料所構成折射構件之晶軸組裝角度設定 成把使雙折射之影響(偏光像差)變成為極小,且可以非晶 折射構件來補償只靠晶軸方位的最佳化法仍然無法補正得 徹底的雙折射影響(偏光像差),因而可確保良好的光學性 能。 接著,作為第三實施形態而就具有依照第一實施形態或 ______-59 - 本紙張尺度適用中國國家標準(CNS) Α4規格(210 X 297公釐) 571344: "Because, in this embodiment, the control shift (step S529) = t" S522, if the aberration of the simulation operation _ lies in the specific hand = within (when the judgment result is "οκ"), it is It means that the optical characteristics of the projection optical system have been adjusted to be finely adjustable by the external adjustment device. Therefore, the installation of the external adjustment device is implemented with its initial adjustment. 〇 ′ 、 中 夕 卜 # The adjustment processing of the response amounts of the actuators 28 to 32 shown in the figure to the control signals. Specifically, for example, the output of the actuators 28 to 32 should be increased by a control system (not shown) (_ "When the control signal, the actuators 28 to 32 still * can increase i _ according to the indication of the control signal = Therefore, it is necessary to adjust the response amount of the actuator 28 to 32 relative to the control amount of the control system. However, since the control k number output by the control system is a signal used to make the optical performance of the projection optical system variable, therefore 泫The initial trimming is to obtain the correlation between the adjustment amount borrowed from the external adjustment device and the performance change amount of the projection optical system PL. However, if the actuators 28 to 32 are installed, only the adjustment using the external adjustment device is performed (Step S530) Dialing step S529-end, the wavefront aberration measurement is performed using the wavefront aberration measuring machine which was used in the above step S516. At this time, the same can be performed for the measured result as in the above step S520. The wavefront aberration is fitted with Zernike's cylindrical function system Zη (ρ, Θ), the expansion coefficient Cn (Zernike coefficient) for each term is obtained, and the components of the wavefront aberration are calculated. (Step S531) -58-This The paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 571344 A7 B7 V. Description of the invention (56) ---- The above step S530—end, it is judged whether the aberration of the projection optical system lies in the specification If the judgment result of step 3531 is "ng", then control is transferred to step S532, otherwise, if the judgment result of step 3531 is "〇κ", the manufacture of the projection optical system PL is completed. (Step S532) In In step S52, after performing the adjustment using the external adjustment device described above, the control is moved to step S529. Here, steps s529 to s532 are repeatedly performed until the judgment result of step S531 becomes rOK ". Furthermore, in Although the assembly process of the second embodiment described above adjusts the wavefront aberration using a plurality of polarized light components, the wavefront aberration can also be measured using only non-two light components. At this time, only the wavefront is used. The standard components of the aberrations are known, so only the parameters of the optical components that affect the polarizing components of the wavefront aberrations are obtained. The correlation between the parameters and the scalar components of the wavefront aberrations is used in each step It is only necessary to change the parameters of the optical components in the above. In summary, if the manufacturing method of the projection optical system according to the second embodiment is used, it is possible to evaluate the origin of, for example, camping stone, barium oxide, etc., because a plurality of polarizing components can be evaluated. The birefringence effect of the axial crystal system crystalline material, while setting the crystal axis assembly angle of the refractive member composed of the isoaxial crystal system crystalline material, set the birefringence effect (polarization aberration) to be extremely small, and it can be amorphous The refraction member is used to compensate for the refraction effect (polarization aberration) that cannot be completely corrected by the optimization method based on the orientation of the crystal axis alone. Therefore, it is possible to ensure good optical performance. Implementation form or ______- 59-This paper size applies to China National Standard (CNS) Α4 size (210 X 297 mm) 571344
第二實施形態所製造投影光學系統之曝光裝置參閱圖π說 明如下。圖17係概略顯示第三實施形態之曝光裝置之圖: 圖17中,來自於由供應例如波長193 nm之脈衝光的A” (氬氟)準分子雷射構成之光源4〇之脈衝光,係沿父方向行進 ,經由光路折曲稜鏡41偏向後,即入射於設在d〇e (Diffractive Optical Element ;繞射光學元件)轉台(turret) 42 之、%射光子元件。遠D 0 A轉台4 2設有種類互異的複數個繞 射光學元件。這些繞射光學元件可將入射之光束變換成使 其在該繞射光學元件之遠場(far field)具有特定的剖面形狀 例如圓形剖面、輪帶狀剖面、多極剖面(對於基準光軸偏心 的複數個之極)之光束。 來自於該繞射光學元件之發散光束,則以聚光透鏡群43 加以聚光而在微型繩眼透鏡(micro fly' s-eye lens) 44之位置 附近,形成繞射光學元件之遠場區域。其中,所謂的微型 蠅眼透鏡44係在一個或複數個基板上一體形成有排列成二 次元矩陣狀之複數個透鏡面者。但也可取代微型蠅眼透鏡 44而使用具有集成為二次元矩陣狀之複數個透鏡元件的蠅 眼透鏡。 此外供配置於繞射光學元件與微型蠅眼透鏡44間之聚光 透鏡群,則以採用向光軸方向移動透鏡即可連續地變更焦 距之可變焦光學系統,或採用更換透鏡即可以非連續性地 變更焦距之多焦點光學系統等之變焦距光學系統為宜。 接著,在微型蠅眼透鏡44之射出面側即可形成出由複數 個光源像構成之次級光源(面光源)。惟也可採取在微型蠅 -60 " 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公爱:)The exposure apparatus of the projection optical system manufactured in the second embodiment is described below with reference to FIG. FIG. 17 is a diagram schematically showing an exposure apparatus according to a third embodiment: In FIG. 17, pulse light from a light source 40 composed of A ”(argon fluoride) excimer laser that supplies pulse light having a wavelength of, for example, 193 nm, It travels in the direction of the parent and is deflected via the bend 41 of the optical path, that is, incident on the% photon element at the turret 42 of the doe (Diffractive Optical Element). Far D 0 A The turntable 42 is provided with a plurality of diffractive optical elements of different types. These diffractive optical elements can transform an incident light beam into a specific cross-sectional shape such as a circle in the far field of the diffractive optical element. Beams with a shaped profile, a belt-like profile, and a multi-pole profile (for the eccentric plural poles of the reference optical axis). The divergent beam from this diffractive optical element is condensed by a condenser lens group 43 and focused in a miniature The far-field area of the diffractive optical element is formed near the position of the micro fly 's-eye lens 44. Among them, the so-called miniature fly-eye lens 44 is integrally formed on one or a plurality of substrates and arranged in two. Dimensional matrix A plurality of lens surfaces. However, instead of the miniature fly-eye lens 44, a fly-eye lens having a plurality of lens elements integrated into a quadratic matrix may be used. In addition, it is arranged between the diffractive optical element and the miniature fly-eye lens 44. For the condenser lens group, a variable-focus optical system such as a multi-focus optical system that can continuously change the focal length by moving the lens in the direction of the optical axis, or a multi-focus optical system that can change the focal length discontinuously by replacing the lens Then, a secondary light source (surface light source) composed of a plurality of light source images can be formed on the exit surface side of the miniature fly-eye lens 44. However, it can also be adopted in the miniature fly-60 " This paper size is applicable to China National Standard (CNS) A4 Specification (210 X 297 Public Love :)
裝 訂Binding
571344 A7 ____B7 五、發明説明(58 ) 眼透鏡44(或蠅眼透鏡)之入射面之位置形成複數個光源的 虛像之方式。 該來自於次級光源之光,係以聚光透鏡光學系統45加以 聚光而重疊地照明可變視野光闌46。然後來自於可變視野 光闌46之光,即經由用以使可變視野光闌46之開口部與配 置在第一面而作為投影原版之標線片r成為共軛系的隱蔽 (blind)成像光學系47a〜47c,而到達標線片r。按在本實施 形怨中’則在隱蔽成像光學系統47a〜47c中配置有兩個光路 折曲鏡48a、48b,以使光路大約偏轉180。。 由來自於隱蔽成像光學系統47a〜47c之光,即可在標線片 R上之部分圖案形成區域形成例如縫隙狀之照野(照射範圍) 。來自於該照野之光,則經由依上述第一或第二實施形態 之製造方法所製得投影光學系統PL而到達配置在投影光學 系統第二面而作為工件(光敏性基板)之晶圓W,並使縫隙 狀的照野内圖案之像形成於該晶圓W。 在本貫施形態’用來將標線片R支撐於第一面上之標線 片載物台RS,與用來將晶圓W支撐於第二面上之晶圓載物 台WS,係可朝Y方向自由移動,因而設投影光學系統之倍 率為β時,若以該倍率β下邊移動這些標線片載物台RS與 晶圓載物台WS邊實施曝光,便可在晶圓w上形成出使缝隙 狀成像區域朝Y方向掃描(sweep)而得之形狀,典型的是在 長方形狀之拍攝區域内形成出標線片r之圖案形成區域内 之圖案像。 對於一個拍攝區域的掃描曝光結束後,驅動晶圓載物台 -61 - 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 571344 A7 -—______ B7 五、發明説明(I9 )"—一 '' -- 二,實施對於其他拍攝區域之掃描曝光,使複數個拍攝區 域开> 成於晶圓之大約全面。 此外,在本實施形態中雖以將經由第—及第二實施形態 之製造方法所製得投影光學系統適用於掃描曝光裝置為例 而加以說明’但經由第-及第二實施形態之製造方法所製 得投影光學系統,也可適用於整片晶圓曝光型投影曝光裝 置。 另外在本實施形態之投影曝光裝置中,則至少在用以根 據來自於光源之光而照明配置#第一面上而作為投影原版 之標線片R的照明光學系統41〜47(:之一部分,尤其在光能 量會變得高之部分,則使用由等軸晶系之結晶材料(例如螢 石)構成之光學構件。像這樣的照明光學系統,由於要求之 光學性能乃比投影光學系統為低,因此本實施形態並不予 貫施使照明光學系統中等軸晶系結晶材料之晶軸方位加以 最佳化藉以減少雙折射影響(偏光像差)之措施。 但疋對於照明光學系統要求的光學性能高時,也可與上 述第一及第二實施形態同樣地,施予等軸晶系結晶材料之 日日軸方位取佳化,或是以由非晶材料構成之光學構件來補 正起因於等軸晶系結晶材料之雙折射影響(偏光像差)。 在本實施形態中,光源雖適用了供應波長193 nm之脈衝 光的ArF準分子雷射,但光源也可適用例如供應波長157 之脈衝光的F2雷射、供應波長147 nm之光的Kr2雷射、供典 波長126 nm之光的Αγ2雷射。 例如,光源若採用可供應波長157 nm之脈衝光的F2雷射 -62 - 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 571344 五、發明説明(6〇 ) ,照明光學系統41〜47c中之氺、泰紅 ^ 肀 < 先透射構件即可使用螢石或氧 晶系結晶材料’或掺雜有氣之石英(改性石英) 易二久Γ微型繩眼透鏡44之光學材料,應蓉於加工容 易與光私長短之優點而以使用改性石英為宜。 二:ί第四實施形態而就使用由雙晶構成之折射構 件的技衫光學系統說明如下。 形態之投影光學手统之;、 筷式顯不弟四貫施 P尤予糸、,·无之圖。按以下說明之 投影光學系統係也可當做上述 4疋 田做上迷罘二貫施形態之投影曝光裝 置之投影光學系統而適用者。 裝 圖18⑷係顯示具有由雙晶構成之折射構件51與由非晶材 科構成<折射構件52的投影光學系統之概略結構,而圖 剛係顯示在折射構件51的結晶5u之晶轴,圖18⑷係顯 π在折射構件51的結晶5lb之晶軸。這些圖^8⑷〜⑷之座標 系係如圖所7JT是通用的。 、 如圖18(a)〜(c)所示,由雙晶構成之折射構件51 ,其以雙 晶面或雙晶境界50S為界而相接的同一相之兩個結晶、 51b係具有在特定的共同之低指數晶軸(在本實施形態尚晶 軸[111 ])周圍回轉180的方位關係者,或是其相接的同一 相之兩個結晶係關於特定的晶軸(在本例為{1 1 1}面)而具有 鏡像關係者。 此種結構,由雙晶構成之折射構件51,其兩個結晶51&、 5 lb之晶軸[in]係使之一致於光軸Αχ ,且使結晶5ib相對於 結晶5U而在χγ平面内以光軸為中心而旋轉18〇。。這是與 使兩個結晶51a、51b之晶軸[111] 一致於光軸Ax,且使結晶 -63 - 本紙張尺度適用中國國家標準(CMS) A4規格(210X297公釐) 571344571344 A7 ____B7 V. Description of the Invention (58) The way in which the position of the incident surface of the eye lens 44 (or fly-eye lens) forms a virtual image of a plurality of light sources. The light from the secondary light source is condensed by a condenser lens optical system 45 to illuminate the variable field diaphragm 46 in an overlapping manner. Then, the light from the variable field diaphragm 46 passes through the blindness of the conjugate system of the opening portion of the variable field diaphragm 46 and the reticle r which is arranged on the first surface as the original projection. The imaging optical systems 47a to 47c reach the reticle r. According to this embodiment, two optical path bending mirrors 48a and 48b are arranged in the concealed imaging optical systems 47a to 47c to deflect the optical path by approximately 180. . By the light from the concealed imaging optical systems 47a to 47c, a slit-shaped light field (irradiation range) can be formed in a part of the pattern formation area on the reticle R, for example. The light from this light field passes through the projection optical system PL produced by the manufacturing method according to the first or second embodiment described above and reaches the wafer disposed on the second surface of the projection optical system as a workpiece (photosensitive substrate). W, and an image of a slit-like pattern in the field is formed on the wafer W. In this embodiment, the reticle stage RS for supporting the reticle R on the first side and the wafer stage WS for supporting the wafer W on the second side are both Moving freely in the Y direction, so if the magnification of the projection optical system is β, if the reticle stage RS and the wafer stage WS are moved under the magnification β and exposure is performed, it can be formed on the wafer w A shape obtained by sweeping the slit-shaped imaging area in the Y direction is typically formed by forming a pattern image in a pattern formation area of a reticle r in a rectangular shooting area. After the scanning exposure of a shooting area is finished, the wafer stage is driven -61-This paper size applies Chinese National Standard (CNS) A4 (210 X 297 mm) 571344 A7-______ B7 V. Description of the invention (I9) " —1 ''-Second, the scanning exposure for other shooting areas is implemented, so that multiple shooting areas are opened > approximately complete on the wafer. In addition, in this embodiment, the projection optical system manufactured by the manufacturing methods of the first and second embodiments is applied to a scanning exposure device as an example, but the manufacturing method of the first and second embodiments is described. The prepared projection optical system can also be applied to a whole wafer exposure type projection exposure device. In addition, in the projection exposure apparatus of this embodiment, at least the illumination optical systems 41 to 47 (: part of the reticle R used as the projection original plate for illuminating the arrangement #first surface according to the light from the light source) In particular, in the part where the light energy will become high, an optical member composed of a crystal material of an equiaxed crystal system (such as fluorite) is used. An illumination optical system like this has a required optical performance that is better than that of a projection optical system. Therefore, this embodiment does not consistently implement measures for optimizing the crystal axis orientation of the crystallographic material of the equiaxial crystal system of the illumination optical system so as to reduce the influence of birefringence (polarization aberration). However, what is required for the illumination optical system When the optical performance is high, as in the first and second embodiments, the day-to-day axis orientation of the equiaxed crystal material can be optimized, or the cause can be corrected by using an optical member made of an amorphous material. The influence of birefringence (polarization aberration) on equiaxed crystal materials. In this embodiment, although the light source is an ArF excimer laser that supplies pulsed light with a wavelength of 193 nm However, the light source can also be applied to, for example, an F2 laser that supplies pulsed light at a wavelength of 157, a Kr2 laser that supplies light at a wavelength of 147 nm, and an A2 laser that supplies light at a typical wavelength of 126 nm. For example, if the light source is used, a wavelength of 157 nm can be supplied Pulsed light F2 laser-62-This paper size applies Chinese National Standard (CNS) A4 specification (210 X 297 mm) 571344 5. Description of the invention (60), lighting optical system 41 ~ 47c Red ^ 肀 < Fluorite or oxygen crystal crystalline materials can be used as the first transmission member 'or gas-doped quartz (modified quartz) Yi Erjiu Γ The optical material of the miniature eyelet lens 44 should be easy to process Due to the advantages of light and light, it is advisable to use modified quartz. II: The fourth embodiment is a shirt optical system using a refracting member composed of a double crystal. The projection optical system of the form; The figure shows that the figure of the four consecutive Shi Pyou Yu ,, ··. The projection optical system according to the following description can also be used as the projection optical system of the projection exposure device of the above-mentioned four modes of projection. Figure 18 shows that the display has The schematic structure of a refracting member 51 composed of a twin crystal and a projection optical system composed of an amorphous material < refraction member 52 is shown in the figure. The figure 5 shows the crystal axis of the crystal 5u of the refracting member 51. Fig. 18 shows that π is refracting. The crystal axis of the 5lb crystal of the member 51. The coordinate systems of these figures ^ 8⑷ ~ ⑷ are universal as shown in Figure 7JT. As shown in Figs. 18 (a) ~ (c), the refracting member 51 composed of a double crystal, The two crystals of the same phase, which are connected by the twin crystal plane or the twin crystal boundary 50S, 51b has a rotation around a specific common low-index crystal axis (the crystal axis [111] in this embodiment) 180 Those who have an orientation relationship, or whose two crystal systems of the same phase are connected, have a mirror relationship with respect to a specific crystal axis ({1 1 1} plane in this example). In this structure, the refracting member 51 composed of twin crystals, the two crystals 51 & and 5 lb of the crystal axis [in] are aligned with the optical axis Aχ, and the crystal 5ib is in the χγ plane relative to the crystal 5U Rotate 180 ° around the optical axis. . This is the same as the crystal axis [111] of the two crystals 51a, 51b and the optical axis Ax, and the crystal -63-This paper size applies the Chinese National Standard (CMS) A4 specification (210X297 mm) 571344
5 1 b相對於結晶5 1 a而在χγ平面內 ^ Υ十面内以先軸為中心而旋轉60。 U成㈣’因此以與上述圖㈣示投影光學系統相同 由彳藉由結晶51a與結晶51b互相使雙折射影響(偏光 象是)大致予以消除。惟此時也可與上述實施形態同樣地, 精由非晶材料構成之光學構件52來補正經由結晶川、川 仍無法消除徹底的雙折射影響(偏光像差)。 如上述’在本實施形態,利用雙折射之影響會在雙晶面 或雙晶境界之前後互相變成為朝相反方向,即可使結晶折 射構件全體減少因固有雙折射引起之光學性能退化。藉此 即可確保投影光學系統之光學性能。 上述實施形態所揭示者,乃是使由等軸晶系結晶材料所 構成光學構件之晶軸[1U]與光軸大致相符之例子,但應與 光軸成一致之晶軸,並非限定於晶軸[m]及與該晶軸 [in]成等效的晶軸。 以下,作為第五實施形態而就在由等軸晶系結晶材料構 成足複數個折射構件中,使特定的第一群光軸與晶軸[1〇〇] 或光學上與該晶軸[100]成等效的晶軸大致相符,使與第一 群互異之特定的第二群光軸與晶軸[100]或光學上與該晶軸 [100]成等效的晶軸大致成為一致,且使這些第一群及第二 群以光軸為中心而大致只相對地回轉45。之例子加以說明。 圖19係用來說明第五實施形態之手法,其係與上述圖 11 (b)〜(e)同樣地顯示相對於光線入射角之雙折射分布^在 第五實施形態之手法,其在第一群折射構件之雙折射分布 將成為如圖19(a)所示者,而在第二群折射構件之雙折射分 _____-64 - 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 571344 A7 B7 62 發明説明 將成為如圖19(b)所示者。其結果,第一群折射構件與第 二郡折射構件全體之雙折射分布將成為如圖l9(c)所示者。 請參閱圖19⑷及19⑻,在第五實施形態之手》去,其對應 於與?軸成相符的晶軸[100]之區域,將成為具有較大折射 率而無雙折射之區域。對應於晶軸[lu]、、卜 、Π Μ ]之區域,將成為具有較小折射率而無雙折射之區 域。至於對應於晶軸[101]、[1(Μ]、[11〇]、[Η〇]之區域 三則將成為對於周方向偏光(Θ偏光)之折射率較大而對於 徑万向偏光(R偏光)之折射率較小的雙折射區域。由上述即 可知各群之透鏡元件會在距自光軸為45。(晶軸[1〇〇]與晶軸 []斤幵/成之角度)之區域受到最大的雙折射影響。 與此相對,參閱圖19(〇即得知,使第一群折射構件與第 =群群折射構件以光軸為中心而只相對地回轉45。時,就 第群折射構件與第二群折射構件全體而纟,_可相當的 =淡雙折射為最大的晶軸[101]、[1(M]、[11〇]、[卜叫之 〜θ使彳于在距自光軸45。之區域亦即自光軸離開之區域 會殘留對於周方向偏光(Θ偏光)折射率比對於徑方向偏光 (R偏光)之折射率為大之雙折射區域。此種情形下,在一 ^ 投影光學系統’其各透鏡元件之光軸與光束之最大角度^ ,35〜40°左右。因而採用第五實施形態之手法,即可在 實質上不致於受到、结晶軸……㈨-十⑴十^叫之雙 折射影響下,確保良好的光學性能。 此外’在上述說財,第—群折射構件及第二群折射構 件各自具有_個或複數之折射構件群折射構件 571344 A75 1 b is rotated 60 relative to the crystal 5 1 a in the χγ plane ^ Υ ten planes with the anterior axis as the center. Therefore, U ′ is substantially the same as the projection optical system shown in the figure above, and the birefringence effect (polarized image) is substantially eliminated by the crystal 51a and the crystal 51b. However, at this time, similarly to the above embodiment, the optical member 52 made of an amorphous material can be used to correct the birefringence effect (polarization aberration) through the crystals. As described above, in this embodiment, the influence of birefringence will be changed to the opposite direction before and after the double crystal plane or the double crystal boundary, so that the entire crystalline refractive member can reduce the optical performance degradation caused by the intrinsic birefringence. This ensures the optical performance of the projection optical system. The embodiment disclosed in the above embodiment is an example in which the crystal axis [1U] of an optical member composed of an equiaxed crystal system crystal material is substantially consistent with the optical axis, but the crystal axis that is to be consistent with the optical axis is not limited to crystal The axis [m] and a crystal axis equivalent to the crystal axis [in]. In the following, as a fifth embodiment, a specific first group of optical axis and crystal axis [100] or optical axis [100] is specified in a plurality of refractive members composed of an equiaxed crystal system crystal material. ] Equivalent to the crystal axis, so that the optical axis of the specific second group which is different from the first group and the crystal axis [100] or the optical axis equivalent to the crystal axis [100] are substantially the same And the first group and the second group are rotated relative to the optical axis by approximately 45 relative to each other. An example is given. FIG. 19 is a diagram for explaining the method of the fifth embodiment, which shows the birefringence distribution with respect to the incident angle of light in the same manner as in the above-mentioned FIGS. 11 (b) to (e). The birefringence distribution of a group of refractive members will become as shown in Figure 19 (a), and the birefringence score of the second group of refractive members will be _____- 64-This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 571344 A7 B7 62 The invention description will be as shown in Figure 19 (b). As a result, the birefringence distribution of the first group of refractive members and the second group of refractive members as a whole is as shown in Fig. 19 (c). Please refer to Figs. 19 (a) and 19 (b), in the fifth embodiment of the "hand", which corresponds to and? The area of the crystal axis [100] whose axes are aligned will become a region with a large refractive index without birefringence. The area corresponding to the crystal axes [lu],, Bu, ΠM] will become a region with a smaller refractive index without birefringence. As for the region III corresponding to the crystal axis [101], [1 (Μ], [11〇], [Η〇], the refractive index for the circumferential polarization (Θ polarization) will be larger, and for the diameter universal polarization ( R polarized light) is a birefringent region with a relatively low refractive index. From the above, it can be known that the lens elements of each group will be at an angle of 45 from the optical axis. (Crystal axis [100]] and the angle of the crystal axis []. ) Region is most affected by birefringence. In contrast, referring to FIG. 19 (0), it is known that the first group of refractive members and the third group of refractive members are rotated relative to each other around the optical axis by 45 °. With regard to the entire group of refractive members and the second group of refractive members, _ can be equivalent = the crystal axis where the light birefringence is the largest [101], [1 (M), [11〇], [Bulletin ~ θ makes At a distance of 45 ° from the optical axis, that is, the region leaving from the optical axis, a birefringent region having a larger refractive index for circumferential polarized light (Θ polarized light) than radial refractive light (R polarized light) remains. In this case, the maximum angle between the optical axis of each lens element and the light beam in a ^ projection optical system 'is about 35 ~ 40 °. Therefore, the fifth The method of applying morphology can ensure good optical performance under the influence of birefringence, which is not substantially affected by the crystal axis ... ㈨- 十 ⑴ 十 ^. In addition, in the foregoing, the first group refractive member and The second group of refractive members each has a plurality of or a plurality of refractive members. Group refractive members 571344 A7
裝Hold
571344571344
以光軸為中心而相對地只回轉60。。 其中’光學上與晶軸[1 1 1]等效的晶軸,就是晶軸[_m] 、[Μ 1]、[11-1]。在第六實施形態之手法,其沿第一群折 射構件的光軸之厚度總和與沿第二群折射構件的光轴之厚 度總和應以大致相等為宜,且沿第三群折射構件的光轴Ζ 厚度總和與沿第四群折射構件的光軸之厚度總和應以大致 相等為宜。 接著,作為第七實施形態而就在由等軸晶系之結晶材料 構成之複數個折射構件中至少使一個折射構件之光轴與晶 軸[1〇〇](或光學上與該晶軸[100]等效的晶軸)相符之例子說 明如下。 參閱上述圖11(b)及圖11(c)即可知,由於使折射構件之光 軸與晶軸[111]相符,對應於雙折射最大的晶軸[110]、 [101]、[011]之區域就以120°節距(pitch)下存在,使得在瞳 面内具有3 0之分布的雙折射影響亦即像在像面(晶圓面)會 產生彗形像差之影響即將出現。 與此相對,參閱上述圖19(b)及圖19(b)即可知,由於使折 射構件之光軸與晶軸[100]相符,對應於雙折射最大的晶轴 [101]、[10-1]、[110]、[1-10]之區域就以90。節距下存在 ’使得在瞳面内具有4 0之分布的雙折射影響即將出現。 此時,欲投影於晶圓的圖案中因縱橫圖案具有主導性, 只要為4 0之分布則不致於出現像會對縱橫圖案產生非點像 差之影響’像的崩潰也不致於變得顯著。因而採取在由等 幸由晶系結晶材料構成之複數個折射構件中,至少使一個折 _ - 67 - 本紙張尺度適用中國國家標準(CNS) Α4規格(210 X 297公釐)Rotate relative to the optical axis only by 60. . Among them, the crystal axis which is optically equivalent to the crystal axis [1 1 1] is the crystal axis [_m], [Μ 1], [11-1]. In the method of the sixth embodiment, the sum of the thicknesses along the optical axis of the first group of refractive members and the sum of the thicknesses along the optical axis of the second group of refractive members should preferably be substantially equal, and the light along the third group of refractive members The sum of the thickness of the axis Z and the thickness of the optical axis of the fourth group of refractive members should be approximately equal. Next, as a seventh embodiment, the optical axis and crystal axis of at least one of the plurality of refractive members made of a crystal material of an equiaxed crystal system are [100] (or optically connected to the crystal axis [ 100] An equivalent crystal axis) example is explained below. Referring to FIG. 11 (b) and FIG. 11 (c), it can be known that since the optical axis of the refractive member is matched with the crystal axis [111], it corresponds to the crystal axis [110], [101], [011] with the largest birefringence. The area exists at a pitch of 120 °, so that the birefringence effect with a distribution of 30 in the pupil plane, that is, the effect that the image will produce coma aberration on the image plane (wafer plane) is about to appear. In contrast, referring to FIG. 19 (b) and FIG. 19 (b), it can be seen that since the optical axis of the refractive member coincides with the crystal axis [100], it corresponds to the crystal axis [101], [10- 1], [110], [1-10] are 90. The existence at the pitch ′ makes the effect of birefringence with a distribution of 40 in the pupil plane imminent. At this time, the pattern to be projected on the wafer is dominated by the vertical and horizontal patterns. As long as the distribution is 40, the appearance of the image will not affect the astigmatism of the vertical and horizontal patterns. The collapse of the image will not become significant. . Therefore, it is adopted that at least one of a plurality of refracting members composed of a crystal-based crystalline material is folded. _-67-This paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm)
裝 πInstall π
571344 五、發明説明(65 ) 射構件之光軸與晶軸[100](或光學上與該晶軸[100]成等效 的晶軸)相符的第七實施形態之手法,即可在實質上不致於 爻到雙折射影響下,確保良好的光學性能。 接著’作為第八實施形態而就在由等軸晶系之結晶材料 構成之複數個折射構件中至少使特定的第五群之光軸與晶 軸[Π0]或光學上與該晶軸[110]成等效的晶軸大致相符, 使與第五群互異而特定的第六群之光軸與晶軸[丨丨0]或光學 上與該晶軸[110]成等效的晶軸大致相符,且使這些第五群 及第六群以光軸為中心而相對地只回轉9〇。之例子說明如 下。 圖20係用以說明本發明第八實施形態的手法之圖,其係 與上述圖11(b)〜圖ll(e)、圖19同樣地,顯示著對於光線入 射角的雙折射分布。在第八實施形態之手法,其在第五群 折射構件之雙折射分布將成為如圖2〇⑷所示者,而在第六 群=射構件之雙折射分布將成為如圖2G(b)所示者。其結果 ,、第五群折射構件與第六郡折射構件全體之雙折射分布將 成為如圖20(c)所示者。 請參閱圖20⑷及⑻,在第八實施形態之手法,其對應於 與光轴成相符的晶軸[11()]之區域,將成為對於一方的方向 《偏光折射率較大而對於另—方的方向(正交方的方向 =向)之偏光折射㈣小之雙折射區域。同㈣應於晶相 %] _](區域,將成為具有較大折射率而無雙折 足區域。至於對應於晶軸[m] JL ^ j I11·1]又區域,則將成為 具有折射率較小而無雙折射之區域。 -68 - 裝 本紙張尺度適用家標準(CNS) Μ規格(幻〇 χ撕公奢丁 571344 A7571344 V. Description of the Invention (65) The method of the seventh embodiment in which the optical axis of the radiating member and the crystal axis [100] (or the crystal axis optically equivalent to the crystal axis [100]) are consistent can be used in essence. It is not affected by birefringence and ensures good optical performance. Next, as the eighth embodiment, at least the optical axis and the crystal axis [Π0] of the specific fifth group among the plurality of refractive members made of a crystal material of the equiaxed crystal system [110] or the optical axis [110] ] Equivalent to the crystal axis, so that the optical axis and crystal axis [丨 丨 0] of the specific sixth group, which are different from the fifth group, are equivalent to the crystal axis [110]. The fifth group and the sixth group are roughly matched, and the relative rotation is only 90 with the optical axis as the center. An example is shown below. Fig. 20 is a diagram for explaining the technique of the eighth embodiment of the present invention, and shows the birefringence distribution with respect to the incident angle of light in the same manner as Figs. 11 (b) to 11 (e) and Fig. 19 described above. In the method of the eighth embodiment, the birefringence distribution in the fifth group of refractive members will become as shown in FIG. 2O, and the birefringence distribution in the sixth group = radiating members will become as shown in FIG. 2G (b). Shown. As a result, the birefringence distribution of the entire fifth group of refractive members and the sixth county refractive member will be as shown in Fig. 20 (c). Please refer to Figure 20⑷ and ⑷. In the method of the eighth embodiment, the area corresponding to the crystal axis [11 ()] corresponding to the optical axis will be the direction for one side "the refractive index of the polarized light is large and for the other- The direction of the square (orthogonal direction = direction) of the polarized light refraction is smaller than the birefringent area. The homogeneous phase should be in the crystal phase%] _] (region, which will become a region with a large refractive index without bifurcation. As for the region corresponding to the crystal axis [m] JL ^ j I11 · 1], it will have a refractive index Smaller area without birefringence. -68-The paper size of this paper is applicable to the family standard (CNS) M specification (Magic χχ 公公 丁丁 571344 A7
二=相對’參閱圖2Q⑷即得知,使第五群折射構件與第 =群群折射構件以光軸為中心而只相對地回轉9〇。時,就 :群折射構件與第穴群折射構件全體而言,即可幾乎使 =折射為最大的晶軸[110]之影響消除,而成為光軸附近具 有居於中間的折射率而無雙折射之區域。亦即,若採用第 ::實施形態之手法,即可在實質上不致於受到雙折射影 曰下’確保良好的光學性能。 曰在第八實施形態之手法’纟沿第五群折射構件的光轴之 厚2、’心和與沿第六群折射構件的光軸之厚度總和也以大致 相等為且尤其在第八貫施形態之手法,由於其雙折射區 域位於中央部(光軸及其附近),因而以適用中央部薄的自 向透鏡為更佳。 〃 再者,也可採用適當地選自以上說明的四種手法之一手 法,或是組合選自四種手法之複數個手法而採用。 另外,由等軸晶系結晶材料構成之折射構件中,若其通 過該折射構件之光線相對於光軸之最大角度超過2〇。則 無論其配置位置仍然容易受到雙折射影響。因而對於由像 通過的光線相對於光軸之最大角度會超過2〇。的等軸晶系 結晶材料構成之折射構件,則以單獨或組合圖丨丨所示之手 法、第五〜第八實施形態所示之手法而適用為宜。藉此構 成即可更完美地減少雙折射影響而確保光學性能。 另外,像側孔徑大的投影光學系統,其配置在比瞳位置 (在具有中間成像點的複數次成像光學系統之情形下則為 最像側(第二面側)之瞳位置)更位於第二面側之透鏡,則有 -69 - 本紙張尺度適用中國國家標準(CNS) A4規格(21〇 X 297公复) 571344 A7 —---------B7 五、發明説明(67 ) 通過的光線對於光軸的最大角度會偏大之傾向。因 配置在最第二面側曈位置與第二面間之折射構件舳 晶系結晶材料形成之折射構件,則以單獨或組合_所輛 之手法、第五〜第八實施形態所示之手法而適用為宜。: 此構成即可更完美地減少雙折射影響而確保光學性能。曰 ,並且,由等軸晶系結晶材料構成之複數個折射構件中, 形成為使其特定的晶軸與光軸大致相符而成之第七群光 射構件,與形成為使其特定的晶軸與光軸大致相符而成之 第八群光透射構件,假設對應於投影光學系統最大孔徑的 光線通過第七群光透射構件時之光程長為L7,對應於投影 光學系統最大孔徑的光線通過上述第八群光透射構件時2 光程長為L8,特定波長之光為;時,應滿足下列條件式為 宜: ,… (9) |L7-L8|a<3X 10” 若依照此結構,則即使為像側孔徑大的投影光學系統,藉 由14些第七群與第八群之光透過構件,即可減少雙折射之 影響。另外如欲更加減少雙折射之影響,則應使上述(9)式 之上限值設定於2.6X 1〇 + 5。 [實施例] 以下說明根據具體性數值之實施例。 圖2 1係顯示本發明第一實施例之投影光學系統透鏡結構 圖。本實施例之投影光學系統,其光學材料係使用石英 Si〇2,及螢石CaF2,用以使配置於第一面之標線片R之像投 影於配置在第二面之晶圓W上。 -70 - 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公釐) /1344 A72 = relative ', referring to FIG. 2Q, it is known that the fifth group refractive member and the third group refractive member are rotated relative to the optical axis by only 90. At this time, as far as the group refractive member and the first group refractive member are concerned, the influence of the crystal axis [110] where the refraction is the largest can be eliminated, and the refractive index in the vicinity of the optical axis has a middle refractive index without birefringence. region. That is, if the method of the :: embodiment is adopted, it is possible to ensure good optical performance without substantially receiving birefringence. In the eighth embodiment, the method '形态 is thick along the optical axis of the fifth group of refractive members2, and the sum of the thickness of the center and the optical axis of the sixth group of refractive members is also substantially equal, and especially in the eighth Since the method of applying the shape is because the birefringence area is located at the central part (the optical axis and its vicinity), it is more suitable to apply a thin central part of the self-directing lens. 〃 Furthermore, a method appropriately selected from one of the four methods described above, or a combination of a plurality of methods selected from the four methods may be used. In addition, in a refractive member made of an equiaxed crystal-based crystalline material, if the maximum angle of the light passing through the refractive member with respect to the optical axis exceeds 20 °. Regardless of its position, it is still susceptible to birefringence. Therefore, the maximum angle of the light passing through the image with respect to the optical axis will exceed 20 °. The refraction member composed of the equiaxed crystal system crystalline material may be applied alone or in combination with the methods shown in the diagrams and the methods shown in the fifth to eighth embodiments. This makes it possible to more perfectly reduce the influence of birefringence and ensure optical performance. In addition, a projection optical system with a large image-side aperture is positioned more closely than the pupil position (the pupil position on the most image side (second surface side) in the case of a plurality of imaging optical systems with intermediate imaging points). The lens on the two sides is -69-This paper size is applicable to the Chinese National Standard (CNS) A4 specification (21〇X 297 public copy) 571344 A7 —--------- B7 V. Description of the invention (67 The maximum angle of the light passing through the optical axis tends to be larger. The refracting member formed by the refracting member 舳 crystal-based crystalline material disposed between the position of the second surface side and the second surface is singly or in combination. The method shown in the fifth to eighth embodiments It is appropriate to apply. : This structure can more perfectly reduce the influence of birefringence and ensure optical performance. In addition, among the plurality of refractive members composed of an equiaxed crystal system crystalline material, a seventh group of light-emitting members formed so that a specific crystal axis thereof substantially coincides with an optical axis is formed with a specific crystal The eighth group of light-transmitting members whose axes are approximately coincident with the optical axis. It is assumed that the light path length when the light corresponding to the maximum aperture of the projection optical system passes through the seventh group of light-transmitting members is L7, and the light corresponding to the maximum aperture of the projection optical system. When passing through the above eighth group of light transmitting members, 2 the optical path length is L8, and the light of a specific wavelength is; when, it should meet the following conditional expressions:, ... (9) | L7-L8 | a < 3X 10 ” Structure, even if it is a projection optical system with a large aperture on the image side, the influence of birefringence can be reduced by 14 light transmitting members of the seventh and eighth groups. In addition, if the effect of birefringence is to be further reduced, it should be The upper limit of the above formula (9) is set to 2.6X 10+ 5. [Examples] Examples based on specific numerical values will be described below. Fig. 21 shows a lens structure of a projection optical system according to a first embodiment of the present invention. Fig. Projected light of this embodiment The optical material of the system uses quartz SiO2 and fluorite CaF2 to project the image of the reticle R arranged on the first side onto the wafer W arranged on the second side. -70-This paper Standards apply to China National Standard (CNS) A4 specifications (210X 297 mm) / 1344 A7
孩投影光學系統係自標線片尺側起依序具有:具有正向 折射力之第-透鏡群G1、具有負向折射力之第二透鏡⑽ 二以及具有正向折射力之第三透鏡群⑺。纟中第一透鏡群 ,有以勞石形成而具有正向折射力之透鏡Lpu。第三透 麵群G3含有以螢石形成之透鏡^^、Lpi3、Lpi4、Lpi5 二孔徑光闌AS係酉己置在第三透鏡群⑺中。第一實施例之投 一光予系、’克之基準波長為193·3㈣⑷f準分子雷射),係屬 一種兩側焦闌的(telecentric)光學系統。 ,接著二在第一實施例,具有正向折射力之第-透鏡群G1 ’ 第面射出之焦闌的光束傳遞到第二透鏡群G2 ,同 時預先產生正向的畸變像差’藉以補正在第二、第三透鏡 =G/ : G3產生《負向的畸變像差。具有負向折射力之第二 鏡群G2係主要參與#兹伐和(心㈣_)之補正,以實 ::象面之平面性。具有正向折射力之第三透鏡群G3則根據 ^弟-透鏡群G2傳遞過來之光束,在主要極力抑制球面像 的產生之狀怨且以焦闌的光束下提供使像成像於第二面 上之功能。 、子於ArF準刀子雷射,石英光學材料會造成吸收或壓縮 (compaction)等照射變動,已為眾所周知。惟在本實施例對 於具有正向折射力之第_透鏡群至少使用一片以上之勞石 光子材料:即可抑制石英光學材料造成之照射變動的像差 '一 在第透鏡群,由於其通過光軸中心的光束(部分的 Μ與通過周邊之光束係比較離的遠,因此在第一透鏡群 G1發生照射變動時’㈣像差或投射區域的中心與周邊之 本紙張尺度適财®时標準(斤--- 571344 A7The projection optical system has, in order from the ruler side, a first lens group G1 having a positive refractive power, a second lens having a negative refractive power, and a third lens group having a positive refractive power. Alas. The first lens group in Langzhong has a lens Lpu formed of laoshi with positive refractive power. The third lens group G3 contains fluorite-containing lenses ^^, Lpi3, Lpi4, and Lpi5. The two-aperture diaphragm AS system has been placed in the third lens group. In the first embodiment, a light source system (the reference wavelength of gram is 193.3 μm excimer laser) is a telecentric optical system of both sides. Then, in the first embodiment, the light beam of the focal stop emitted from the first lens group G1 with the positive refractive power is transmitted to the second lens group G2, and the positive distortion aberration is generated in advance to compensate for this. The second and third lenses = G /: G3 produces "negative distortion aberration. The second mirror group G2 with negative refractive power is mainly involved in the correction of # 兹瓦 和 (心 ㈣_) to realize the flatness of :: xiang. The third lens group G3 with a positive refractive power is based on the light beam transmitted from the lens-lens group G2, which mainly suppresses the generation of spherical images and uses a focal beam to provide an image on the second surface. On the function. It is well known that ArF quasi-knife lasers, quartz optical materials can cause changes in radiation such as absorption or compression. However, in this embodiment, at least one piece of Laoshi photonic material is used for the _ lens group having a positive refractive power: the aberration of the irradiation variation caused by the quartz optical material can be suppressed. The beam at the center of the axis (part of the M is far away from the beam passing through the periphery, so when the first lens group G1 changes in illumination, 'the aberration or the center of the projection area and the surrounding paper size are suitable for the paper standard.] (Jin --- 571344 A7
差等將變得顯I,而使像差變動變丈。因而在第—透鏡群 G1使用螢石,即可有效地抑制照射變動造成之像差退化。 此外在本實施例之投影光學系統,較理想為使第一透 鏡群G1中以勞石形成之透鏡成分中至少一個透鏡成分,具 有正向的折射力。如上述,#因於第一透鏡群⑴之彗形像 差或投影區域之中心與周邊之差等照射變動造成之像差退 化的〜響’係較起因於其他透鏡群者為大。尤其是凸透鏡 由於通過《學材料之光程長則以通過其光軸中心的光束 :比通過其周&的光束為$《,因&容易受到《學材料之 ,射變動影響。如此,就有效地控制照射變動所造成像差 變動$觀點而言,螢石光學材料仍應使用具有正向折射力 、透鏡為丘。並且就藉由與石英之折射率差而具有消色作 用 <觀點來說,螢石光學材料也應使用於具有正向折射力 之透鏡。 土另外第三透鏡群G3應至少具有一個由上述螢石形成之透 鏡成分為宜。在本實施例之投影光學系統,由於由第二透 鏡群G2發散之光束會由第三透鏡群G3加以收斂,因此第三 透鏡群G3之各透鏡的照射能量密度必然升高。這將構成照 射變動之一的壓縮之發生原因。惟若在第三透鏡群使用螢 石光學材料,即可得減輕該壓縮影響之效果。並且若把勞 石光學材料使用於照射能量密度會集中的面上附近,具有 厚度之光學材料,則可更有效地補正壓縮。 兹將第一實施例之投影光學系統之特性值列示於表又。 表1中,/3為投影倍率(橫倍率)、NA為像側(第二面側)孔徑 L__- 72 - 本紙張中國國家標準(CNS) Μ規—〇χ 涵The aberration will become I, and the aberration fluctuation will be changed. Therefore, the use of fluorite in the first lens group G1 can effectively suppress the deterioration of aberrations caused by irradiation variations. In addition, in the projection optical system of this embodiment, it is preferable that at least one lens component of the lens components formed of laurel in the first lens group G1 has a positive refractive power. As described above, #the aberration degradation due to irradiation variations such as coma aberration of the first lens group or the difference between the center and the periphery of the projection area is larger than that caused by other lens groups. Especially the convex lens, because the length of the optical path of the learning material is to pass through the center of its optical axis: than the beam passing through its circumference & is $, because & is easily affected by the change of the radiation of the learning material. In this way, from the viewpoint of effectively controlling the change in aberrations caused by changes in illumination, fluorite optical materials should still use a lens with positive refractive power. And from the viewpoint of having an achromatic effect by the refractive index difference from quartz < from the viewpoint, fluorite optical materials should also be used for lenses with a positive refractive power. The third lens group G3 should preferably have at least one lens component formed of the above-mentioned fluorite. In the projection optical system of this embodiment, since the light beam diverged by the second lens group G2 is converged by the third lens group G3, the irradiation energy density of each lens of the third lens group G3 is necessarily increased. This will constitute a cause of compression, which is one of the variations in irradiation. However, if a fluorite optical material is used for the third lens group, the effect of reducing the compression effect can be obtained. In addition, if the optical material with a high thickness is used near the surface where the irradiation energy density is concentrated, the optical material can be used to correct the compression more effectively. The characteristic values of the projection optical system of the first embodiment are shown in the table. In Table 1, / 3 is the projection magnification (horizontal magnification) and NA is the image side (second side) aperture. L __- 72-Chinese National Standard (CNS) for this paper
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571344 五、發明説明(7〇 ) 、B為在像面上之像圈(image circle)直徑。另外表!中 碼係表示沿著光線自物體面(第一面)之標線片面向像面(第 二面)行進的方向,而自標線片側起之順序,r係表示各面 之曲率半徑(非球面之情形時則為頂點曲率半徑)、d係表示 各面在光軸上之面間隔。 τ 另外,於表2顯示各非球面之非球面係數。設與光軸成 垂直方向之高度為y、沿著自非球面頂點的接平面起至在 南度y的非球面上位置為止的光軸之距離(弛垂量;幻為Z ,頂曲率半徑為r、圓錐係數為κ、n次之非球面係數為A〜F 時’非球面得以下式(10)表示之: (10) Z=(y2/r)/[l + { 1-(1+K) · y2/r2}1/2]571344 V. Description of the invention (70), B is the diameter of the image circle on the image plane. Another table! The medium code indicates the direction along which the light travels from the reticle of the object surface (the first surface) to the image plane (the second surface), and the order from the reticle side, and r indicates the radius of curvature of each surface (non- In the case of a spherical surface, the radius of curvature of the vertex), d is the surface interval of each surface on the optical axis. τ In Table 2, aspherical coefficients of each aspheric surface are shown. Let the height perpendicular to the optical axis be y and the distance along the optical axis from the joint plane from the vertex of the aspheric surface to the position on the aspheric surface south of y (the amount of sag; Z is the magic radius of the top curvature) Is r, the conic coefficient is κ, n times the aspheric coefficient is A ~ F, the aspheric surface is expressed by the following formula (10): (10) Z = (y2 / r) / [l + {1- (1 + K) · y2 / r2} 1/2]
+A · y4+B · y6+C · y8 +D · yi〇+E · yi2+F · yM 另表2中記載於各非球面係數欄中之£111係代表} 〇m。 此外本實施例之特性值中曲率半徑、面間隔之單位,可 使用例如mm。波長為193.3 nm時之各光學材料折射率為: Si〇2 1.5603261 CaF2 1.5014548 [表1] β = -0.25 ΝΑ=0·78 Β=27.4 面碼 曲率半徑 面間隔 光學材料 56.57 571344 A7 B7 五、發明説明( 71 ) 1 388.465 23.27 Si02 2 177.000 42.53 3 -120.028 15.00 Si02 4 -752.332 16.54 5 -193.722 44.12 Si02 6 -192.988 1.00 7 -799.710 42.35 S1O2 8 -240.979 1.00 9 666.130 51.12 Si02 10 -543.380 1.00 11 299.996 49.64 Si02 12 00 1.00 13 276.988 35.60 Si02 14 991.456 1.00 15 252.935 30.34 CaF2 16 574.560 30.59 17 687.760 19.37 S1O2 18 143.863 30.27 19 -399.976 15.00 Si02 20 170.000 87.67 21 -128.314 26.18 Si02 22 804.730 21.59 23 -570.040 51.47 Si02 24 950.000 10.24 25 00 35.89 CaF2 26 -250.424 1.02 -74 - 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐)+ A · y4 + B · y6 + C · y8 + D · yi〇 + E · yi2 + F · yM In Table 2, £ 111 represents each aspherical coefficient column} 〇m. The unit of the radius of curvature and the interval between the characteristic values of this embodiment can be, for example, mm. The refractive index of each optical material at a wavelength of 193.3 nm is: Si〇2 1.5603261 CaF2 1.5014548 [Table 1] β = -0.25 ΝΑ = 0 · 78 Β = 27.4 surface code curvature radius surface interval optical material 56.57 571344 A7 B7 V. Invention Description (71) 1 388.465 23.27 Si02 2 177.000 42.53 3 -120.028 15.00 Si02 4 -752.332 16.54 5 -193.722 44.12 Si02 6 -192.988 1.00 7 -799.710 42.35 S1O2 8 -240.979 1.00 9 666.130 51.12 Si02 10 -543.380 1.00 11 299.996 49 12 00 1.00 13 276.988 35.60 Si02 14 991.456 1.00 15 252.935 30.34 CaF2 16 574.560 30.59 17 687.760 19.37 S1O2 18 143.863 30.27 19 -399.976 15.00 Si02 20 170.000 87.67 21 -128.314 26.18 Si02 22 804.730 21.59 23 -02.00 0.00.50 51.47 35.89 CaF2 26 -250.424 1.02 -74-This paper size applies to China National Standard (CNS) A4 (210 X 297 mm)
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571344 A7 B7 27 00 41.69 CaF2 28 -262.449 13.09 29 290.060 56.21 S1O2 30 1757.000 26.96 31 00 15.03 Si02 32 276.988 34.69 33 533.910 48.23 Si02 34 -471.548 15.61 35 00 32.96 Si02 36 -490.708 2.60 3 7 199.138 42.55 Si〇2 38 439.306 3.65 39 170.020 49.30 Si02 40 300.000 1.66 41 154.428 45.93 CaF2 42 522.270 5.77 43 00 60.00 CaF2 44 1687.460 11.35571344 A7 B7 27 00 41.69 CaF2 28 -262.449 13.09 29 290.060 56.21 S1O2 30 1757.000 26.96 31 00 15.03 Si02 32 276.988 34.69 33 533.910 48.23 Si02 34 -471.548 15.61 35 00 32.96 Si02 36 -490.708 2.60 3 7 199.138 42.55306. 3.65 39 170.020 49.30 Si02 40 300.000 1.66 41 154.428 45.93 CaF2 42 522.270 5.77 43 00 60.00 CaF2 44 1687.460 11.35
裝 五、發明説明(72 ) [表2] (非球面係數) [面碼2 ] K=0.000000 Α=-0.106010Ε-06 Β = 0.204228Ε-11 Ο0.588237Ε-16 D = 0.1 12269Ε-20 訂5. Description of the invention (72) [Table 2] (aspherical coefficient) [area code 2] K = 0.000000 Α = -0.106010E-06 Β = 0.204228Ε-11 〇0.588237E-16 D = 0.1 12269E-20 Order
-75 -本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 571344 A7 B7 五、發明説明(73 ) [面碼1 4 ] K=0.000000 Α=0.417491Ε-08 Β = 0.51411 IE-13 O-0.666592E-18 D = 0.141913E-22 [面碼2 0 ] K=0.000000 Α=0·166854Ε-07 Β = 0.370389Ε-12 Ο-0.138273Ε-16 D = -0.3041 13E-20 [面碼2 4 ] Κ=0.000000 Α=0·361963Ε-07 Β = -0.679214Ε-12 C = -0.128267E-16 D = 0.908964E-21 Ε = -0.121007Ε-25 [面碼4 0 ] Κ=0.000000 Α=-0.179608Ε-07 Β = 0·149941Ε-12 C = -0.128914E-17 D = -0.506694E-21 Ε=0.204017Ε-25 F = -0.73001 1E-30 -76 - 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐)-75-This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 571344 A7 B7 V. Description of the invention (73) [face code 1 4] K = 0.000000 Α = 0.417491E-08 Β = 0.51411 IE-13 O-0.666592E-18 D = 0.141913E-22 [face code 2 0] K = 0.000000 Α = 0.166854Ε-07 Β = 0.370389E-12 〇-0.138273E-16 D = -0.3041 13E-20 [Face code 2 4] Κ = 0.000000 Α = 0.361963Ε-07 Β = -0.679214E-12 C = -0.128267E-16 D = 0.908964E-21 Ε = -0.121007E-25 [Face code 4 0] Κ = 0.000000 Α = -0.179608Ε-07 Β = 0.1149941E-12 C = -0.128914E-17 D = -0.506694E-21 Ε = 0.204017E-25 F = -0.73001 1E-30 -76-Applicable to the paper size China National Standard (CNS) A4 specification (210X297 mm)
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571344 五、發明説明(74 螯由調整構成投影光學系統的光學材料中由 :,成〈透鏡成分LP11〜LP15之方位角(以光軸為中心之 回轉幻而補正雙折射引起之負面影響(偏光像差)。 ⑷係顯示對於由勞石構成之透鏡成分w卜咖, 二螢石< 晶軸Π11]與光轴相符且使各自方位角朝同一方 ^為-致時在光軸上之點像強度分布。按圖Μ⑷之PSF 取大值為90.72。 圖22(b)係顯示對於由螢石構成之透鏡成分Lp"〜中 ’使其透鏡成分LP14之方位角,對於其他螢石透鏡成分 UMi〜LP13、LP15以光軸為中心而相對回轉18〇。時在光軸 上U像強度分布。按圖22⑻之pSF之最大值為Μ·"。 由這些圖22⑷及圖22(b)即可知,使由螢石構成之透鏡成 分LP11〜LP15之晶軸方位角全部成為_致時(圖22⑷之場 合),其標量成分像差之3Θ成分大,且PSF值亦低到9〇6左 右,與此相對,若使透鏡成分LP14之方位角對於其他螢石 透鏡成分LP11〜LP13、LP15以光軸為中心而相對回轉18〇。 時(係與透鏡成分1^14與勞石透鏡成分Lpu〜Lpi3、Lpi5之 相對万位角為60。的場合等效,即圖22(b)之場合),標量成 分像差之3 0成分就變小,且PSF值亦會升高至96·4左右。 如此,變更等軸晶系結晶材料之晶軸方位角即可改善投影 光學系統之光學性能。 ~ 圖22⑷係對於圖22(b)之狀態(使透鏡成分^14之方位角 對於其他勞石透鏡成分LP11〜LP13、^^在光軸周圍相對 回轉180之狀態)再加上在投影光學系統中由石英構成之 __-77 - 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公釐) 571344571344 V. Description of the invention (74) In the adjustment of the optical material constituting the projection optical system, the azimuth angle of the lens component LP11 ~ LP15 (the rotation centered around the optical axis and the negative effect caused by birefringence is corrected (polarized light) Aberration). For the lens component wbca composed of Lao Shi, the two fluorite < crystal axis Π11] are consistent with the optical axis and their respective azimuth angles are the same. Point image intensity distribution. The maximum value of the PSF according to the figure MF is 90.72. Figure 22 (b) shows the azimuth of the lens component LP14 made of fluorite for the lens component Lp " ~~ ', and for other fluorite lenses The components UMi to LP13 and LP15 are relatively rotated around the optical axis by 18 °. The U-image intensity distribution is on the optical axis. The maximum value of pSF in Fig. 22⑻ is M · ". From these Figs. 22⑷ and 22 (b ) It can be seen that when the lens axis azimuth angles of the lens components LP11 to LP15 made of fluorite are all the same (in the case of Fig. 22), the 3Θ component of the scalar component aberration is large, and the PSF value is as low as 90. In contrast, if the azimuth angle of the lens component LP14 is Other fluorite lens components LP11 to LP13 and LP15 are rotated relative to the optical axis by 18 °. (When the relative tenor angle between the lens component 1 ^ 14 and the laurel lens components Lpu ~ Lpi3 and Lpi5 is 60.) Equivalent, that is, in the case of FIG. 22 (b)), the 30 component of the scalar component aberration becomes smaller, and the PSF value will rise to about 96 · 4. In this way, the crystal axis of the equiaxed crystal material is changed. The azimuth angle can improve the optical performance of the projection optical system. ~ Figure 22 is for the state of Figure 22 (b) (the azimuth angle of the lens component ^ 14 is relative to other Lao Shi lens components LP11 ~ LP13, ^^ relative to each other around the optical axis The state of rotation 180) plus __77 made of quartz in the projection optical system-This paper size applies to China National Standard (CNS) A4 (210X 297 mm) 571344
透鏡成分LSI〜LS17中,對弘日土糾、匕 以工m $ 野於目里附近之透鏡成分LS12及LS14 ,賦予用以補正圖22(b)所千徬兰、 PSF值之最大值就變成99 86、广雙折射分布者。藉此 光學性能。 成"I可更加改善投影光學系統之 按圖22所示例子係採用使投影光學系統中螢石透鏡成分 之晶軸[⑴]與光袖相符之手法,但也可採取使其他之晶轴 與光軸相符之手法。 圖23⑷係顯示與圖22⑷同樣地由螢石構成之透鏡成分 LP11〜LP15使其勞石之晶轴[⑴]與光軸相符且使各自方位 角朝同-方向相符時’其在光轴上之點像強度分布。圖 23(b)係顯示由螢石構成之透鏡成分Lpn〜Lpi5中使透鏡成 分LP11、LP12及LP13之光軸與螢石之晶軸[1〇〇]相符使 透鏡成分LP14及LP15之光軸與螢石之晶軸[11〇]相符而成 之例子。 並且,對於在光軸擁有晶軸[1〇〇]之透鏡成分LP11、Lpl2 及LP13,使其透鏡成分LPU&Lpi3的光軸周圍之方位角一 致,且使透鏡成分LP12之方位角以光軸為中心而相對於透 鏡成分LP11及LP13只相對回轉45。。同時對於在光軸擁有 晶軸[110]之透鏡成分LP14及LS15,則相對於一方的透鏡 成为使另一方的透鏡成分之方位角以光軸為中心而只相對 回轉90° 。 參閱作為比較例之圖23(a)與圖23(b)即可知,在圖23(b) 之情況下’其P S F值之最大值為9 9 · 4,而具有良好的光學性 能。另在圖23(b),如欲補正依然殘留的微小偏光像差成分 -78 - 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公釐) 571344 A7 B7 76 ) 五、發明説明( 、則與圖22(c)之情況同樣地,也可對於由螢石構成之透鏡 成分LP1〜LP1 7中至少一個透鏡成分賦予特定的雙折射分布 ,俾實現更進一步的改善光學性能。 圖24係顯示本發明第二實施例之投影光學系統透鏡結構 圖。本實施例之投影光學系統,其光學材料係使用石英 Si〇2及螢石CaF2 ,用以使配置在第一面之標線片尺的像投影 於配置在第一面之晶圓W上。第二實施例之投影光學系統 包含以勞石形成而具有正向的折射力之透鏡Lpi ΚΡ16, 與以石英形成之透鏡LSI〜LS16。第二實施例的投影光學系 統之基準波長為193.3 nm (ArF準分子雷射),係屬於焦闌的 光學系統。 # Λ 於下列表3顯示第二實施例之投影光學系統特性值。表3 中符號之意議乃與表1相同,因而不加說明。 另於表4顯示各非球面之非球面係數。非球面形狀可以 上述(10)式表示之。另在表4中記載於各非球面係數欄中之 Em係代表1 0m。此處,做為本實施之各值中之曲率半徑、 面間隔單位之一列,可使snm。此外,波長為193·3 之各光學材料折射率為如在上述第一實施例中所提及者。 [表3] β=-0.25 ΝΑ=0·85 Β=23.4 面碼 曲率半徑 面間隔光學材料 1 -16644.993 14.681 Si02 2 200.000 38.160 -97.636 39.394 Si02Among the lens components LSI to LS17, the lens components LS12 and LS14 in the vicinity of Hongri Soil Correction Co., Ltd. and M $ Ye wild in the eyes are given the maximum values to correct the Cymbidium and PSF values shown in Figure 22 (b) Become a 99 86, wide birefringent distributor. Take this optical performance. "I can improve the projection optical system even more. According to the example shown in Fig. 22, the method of matching the crystal axis [⑴] of the fluorite lens component in the projection optical system with the optical sleeve is adopted, but other crystal axes can also be adopted. A technique that matches the optical axis. Fig. 23 (a) shows the lens components LP11 to LP15 composed of fluorite similar to Fig. 22 (b), so that the crystal axis [⑴] of the laurel is aligned with the optical axis and the respective azimuth angles are aligned in the same-direction. The points are like intensity distribution. Fig. 23 (b) shows the optical axis of the lens components LP11, LP12, and LP13 and the crystal axis of the fluorite [100] among the lens components Lpn to Lpi5 composed of fluorite, and the optical axes of the lens components LP14 and LP15. An example that matches the crystal axis of fluorite [11〇]. In addition, for lens components LP11, Lpl2, and LP13 having a crystal axis [100] on the optical axis, the azimuths around the optical axis of the lens components LPU & Lpi3 are made uniform, and the azimuth of the lens component LP12 is the optical axis As the center, the lens components LP11 and LP13 only rotate 45 relative to each other. . At the same time, for the lens components LP14 and LS15 that have the crystal axis [110] on the optical axis, the azimuth of the other lens component with the optical axis as the center is rotated relative to the other lens by 90 °. Referring to Figs. 23 (a) and 23 (b) as comparative examples, it can be seen that in the case of Fig. 23 (b), the maximum value of the P S F value is 9 9 · 4, and it has good optical properties. In addition, in Figure 23 (b), if you want to correct the remaining small polarized aberration components -78-This paper size applies the Chinese National Standard (CNS) A4 specification (210X 297 mm) 571344 A7 B7 76) 5. Description of the invention ( As in the case of FIG. 22 (c), a specific birefringence distribution can be given to at least one of the lens components LP1 to LP1 7 made of fluorite, thereby achieving further improvement in optical performance. It shows the lens structure of the projection optical system of the second embodiment of the present invention. The optical material of the projection optical system of this embodiment uses quartz Si02 and fluorite CaF2 to make the reticle disposed on the first side. An image of a ruler is projected on a wafer W disposed on the first surface. The projection optical system of the second embodiment includes a lens Lpi κ16 formed of laxite and having a positive refractive power, and a lens LSI ~ LS16 formed of quartz. The reference wavelength of the projection optical system of the second embodiment is 193.3 nm (ArF excimer laser), which is an optical system belonging to the focal stop. # Λ The characteristic values of the projection optical system of the second embodiment are shown in Table 3 below. Table 3 symbols The meaning is the same as in Table 1, so it will not be explained. In addition, the aspheric coefficient of each aspheric surface is shown in Table 4. The aspheric shape can be expressed by the above formula (10). In addition, the aspherical coefficients are described in Table 4. Em in the column represents 10m. Here, as one of the units of the radius of curvature and the interval between units in this implementation, snm can be made. In addition, the refractive index of each optical material with a wavelength of 193.3 is as follows Those mentioned in the first embodiment above. [Table 3] β = -0.25 ΝΑ = 0 · 85 Β = 23.4 area code curvature radius surface interval optical material 1 -16644.993 14.681 Si02 2 200.000 38.160 -97.636 39.394 Si02
571344 A7 B7 五、發明説明(77 ) 4 -3498.612 1.963 5 20854.806 47.225 CaF2 6 -189.240 1.000 7 -1848.127 33.691 S1O2 8 -335.321 1.000 9 1292.071 37.309 Si02 10 -600.215 1.331 11 492.732 38.730 Si02 12 -3044.576 77.326 13 190.000 48.156 CaF2 14 833.704 12.324 15 177.093 34.107 Si02 16 525.225 8.344 17 1357.022 39.940 Si02 18 104.862 40.492 19 -211.803 13.000 Si02 20 167.689 25.248 21 -172.613 14.042 Si02 22 207.257 6.376 23 377.821 39.683 CaF2 24 -169.378 86.157 25 -380.085 20.000 Si02 26 515.903 7.314 27 504.576 50.802 CaF2 28 -308.601 1.000 29 1 127.574 30.958 S1O2 -80 - 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 571344 A7 B7 五、發明説明(78 ) 30 -781.573 19.652 31 763.980 52.719 Si02 32 -33 1.674 21.193 33 -211.490 25.066 Si02 34 -300.000 26.763 35 1063.093 41.880 Si02 36 -559.169 1.000 37 189.378 50.245 Si02 38 764.962 1.000 39 145.835 35.087 Si02 40 235.771 1.000 41 178.250 45.678 CaF2 42 406.631 6.433 43 -5014.697 43.998 CaF2 44 00 10.500 [表4] [面碼2 ] K=0.000000 Α=-1.460090Ε-07 Β = 5.901790Ε-12 C = -2.851310E-16 D = 2.350150E-20 E=-2.375080E-24 F=1.914710E-28 [面碼1 6 ] K=0.000000 -81 - 本紙張尺度適用中國國家標準(CNS) A4規格(21〇x 297公釐) 571344 A7 B7 五、發明説明(79 ) A=2.294100E-08 B = -2.794170E-13 01.017110E-17 D = 5.514660E-22 E = -5.807000E-26 F=4.364070E-30 [面碼2 2 ] K=0.000000 Α=7·961350Ε-09 Β = -3.690120Ε-12 C=1.927460E-17 D = 5.305600E-21 Ε = -2.919800Ε-26 F=-2.770450E-29 [面碼2 6 ] K=0.000000 Α=2·103660Ε-08 Β = -6.466850Ε-13 C = -6.55 1390E-18 D = 2.426880E-22 Ε=1·189120Ε-27 F = -3.538550E-31 [面碼1 4 0 ] K=0.000000 Α=-1·693250Ε-08 Β = 6.620660Ε-13 -82 - 本紙張尺度適用中國國家標準(CNS) Α4規格(210 X 297公釐) 571344571344 A7 B7 V. Description of the invention (77) 4 -3498.612 1.963 5 20854.806 47.225 CaF2 6 -189.240 1.000 7 -1848.127 33.691 S1O2 8 -335.321 1.000 9 1292.071 37.309 Si02 10 -600.215 1.331 11 492.732 38.730 Si02 12 -3044.576 48.326 13 CaF2 14 833.704 12.324 15 177.093 34.107 Si02 16 525.225 8.344 17 1357.022 39.940 Si02 18 104.862 40.492 19 -211.803 13.000 Si02 20 167.689 25.248 21 -172.613 14.042 Si02 22 207.257 6.376 23 377.821 Si.683 CaF2 24 -169.02.385. 85.157 25.157 27 504.576 50.802 CaF2 28 -308.601 1.000 29 1 127.574 30.958 S1O2 -80-This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) 571344 A7 B7 V. Description of the invention (78) 30 -781.573 19.652 31 763.980 52.719 Si02 32 -33 1.674 21.193 33 -211.490 25.066 Si02 34 -300.000 26.763 35 1063.093 41.880 Si02 36 -559.169 1.000 37 189.378 50.245 Si02 38 764.962 1.000 39 145.835 35.087 Si02 40 235.771 1.000 41 178.250 45.678 CaF2 42 406.631 6.433 43 -5014.697 43.998 CaF2 44 00 10.500 [Table 4] [face code 2] K = 0.000000 Α = -1.460090Ε-07 Β = 5.901790E-12 C = -2.851310E-16 D = 2.350150E-20 E = -2.375080E-24 F = 1.914710E-28 [face code 1 6] K = 0.000000 -81-This paper size applies to China National Standard (CNS) A4 (21〇x 297 mm) 571344 A7 B7 V. Invention Explanation (79) A = 2.294100E-08 B = -2.794170E-13 01.017110E-17 D = 5.514660E-22 E = -5.807000E-26 F = 4.364070E-30 [face code 2 2] K = 0.000000 Α = 7.1961350E-09 Β = -3.690120E-12 C = 1.927460E-17 D = 5.305600E-21 Ε = -2.919800E-26 F = -2.770450E-29 [face code 2 6] K = 0.000000 Α = 2.103660E-08 Β = -6.466850E-13 C = -6.55 1390E-18 D = 2.426880E-22 Ε = 1.189120E-27 F = -3.538550E-31 [Face code 1 4 0] K = 0.000000 Α = -1 · 693250Ε-08 Β = 6.620660Ε-13 -82-This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) 571344
C==-9.551420E-18 D"M.367360E-21 e==1.080030E-25 F==-4.1 15960E-30 ::::係精由調整在構成投影光學系統的光學材料中 成之透鏡成分LP11〜Lpi6之方位角(以光軸為中心 ^轉角)而補正雙折射引起之負面影響(偏光像差)。 ^25⑷係顯示為比較而無視勞石之固有雙折射影響時在 抽上所得〈點像強度分布。按圖25⑷之psF最大值為 99.97 〇 圖25(b)係顯示對於由螢石構成之透鏡成分LP11〜LP16, 使其螢石〈晶軸tl i n與光軸相符且使各自方位角朝同—方 向成為一致時在光軸上所得之點像強度分布。按圖25⑻之 PSF最大值為94.57。 圖25(c)係顯示對於由螢石構成之透鏡成分Lpn〜Lpi6中 使其透鏡成分LP11之方位角,對於其他螢石透鏡成分 LP12〜LP14、LP16以光軸為中心而相對地回轉6〇。,且使 透鏡成分LP15之方位角對於其他勞石透鏡成分Lpi2〜Lpi4 、LP16以光軸為中心而相對地回轉6〇。時在光軸上所得之 點像強度分布。按圖25(c)之PSF最大值為95.86。 由這些圖25(b)及圖25(c)即可知,使由螢石構成之透鏡成 分LP11〜LP10之晶軸方位角全部成為一致時(圖25(b)之場 合)’其標量成分像差之成分大,且pSF值亦低到94.6左 右,與此相對,若使透鏡成分Lpi丨之方位角對於其他螢石透 ______ 83 - 本紙張尺度適财S ®家標準(CNS) A4規格(21GX297公董) 571344 A7 ____B7 五、發明説明(81 ) 鉍成分LP12〜LP14、LP16以光軸為中心而相對地回轉6〇。 ,且使透鏡成分LP15之方位角對於其他螢石透鏡成分 LP12〜LP14、LP16以光軸為中心而相對地回轉6〇。時(圖 25(c)之% & “ f成分像差之3 0成分就變小,且psF值 亦會升高至95.8左右。如此,變更等軸晶系結晶材料之晶 軸方位角即可改善投影光學系統之光學性能。 圖25(d)係對於圖25(c)之狀態(使透鏡成分Lpi丨、Lpi5之 方位角對於其他勞石透鏡成分LP12〜LP14、LP16以光軸為 中心而相對地回轉60。之狀態)再加上在投影光學系統中由 石英構成之透鏡成分LSI〜LS 16中,對於瞳附近之透鏡成分 LS 14,賦予用以補正於圖22(b)所示像差之雙折射分布者。 藉此PSF值之最大值就變成99.82,這與圖25(a)之理想狀態 相較,相對於圖25(a)之場合的PSF最大值為99·92,在圖 25(d)則可使PSF最大值提高至大致相同之值,顯然可更加 改善投影光學系統之光學性能。 按圖2 5所tf例子係採用使投影光學系統中勞石透鏡成分 之晶軸[111 ]與光軸相符之手法,但也可採取使其他之晶轴 與光軸相符之手法。 圖26(a)係顯示對於投影光學系統之螢石透鏡成分 LP11〜LP16中,使其透鏡成分LP11及LP12之光軸與勞石晶 軸[110]相符,使透鏡成分LP13及LP14之光軸與螢石晶轴 [100]相符,使透鏡成分LS15及LS16之光軸與勞石晶轴 [111]相符時之點像強度分布。在該圖26(a)之情形時,其係 對於在光軸擁有晶軸[1 10]之透鏡成分LP1 1及LP 12 ,相對 -84 - 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐)C ==-9.551420E-18 D " M.367360E-21 e == 1.080030E-25 F ==-4.1 15960E-30 :::: The lens is made by adjusting the lens formed in the optical material constituting the projection optical system The azimuth angles (with the optical axis as the center ^ rotation angle) of the components LP11 to Lpi6 correct the negative effect (polarization aberration) caused by birefringence. ^ 25 is shown for comparison, ignoring the inherent birefringence effect of Lao Shi, and obtained from the extraction of <point image intensity distribution. According to Fig. 25, the maximum psf is 99.97. Fig. 25 (b) shows that for the lens components LP11 to LP16 made of fluorite, the fluorite <crystal axis t in coincides with the optical axis and their respective azimuth angles are the same— A point image intensity distribution obtained on the optical axis when the directions are aligned. According to Figure 25, the maximum PSF is 94.57. FIG. 25 (c) shows the azimuth of the lens component LP11 among the lens components Lpn to Lpi6 made of fluorite, and the other fluorite lens components LP12 to LP14 and LP16 are relatively rotated around the optical axis as the center. . In addition, the azimuth of the lens component LP15 is relatively rotated relative to the other laurel lens components Lpi2 to Lpi4 and LP16 around the optical axis by 60. The point-like intensity distribution obtained on the optical axis at this time. The maximum PSF according to Figure 25 (c) is 95.86. From these Figs. 25 (b) and 25 (c), it can be seen that when the azimuth angles of the lens axes LP11 to LP10 made of fluorite are all the same (in the case of Fig. 25 (b)), its scalar component image The difference is large, and the pSF value is as low as 94.6. In contrast, if the azimuth of the lens component Lpi 丨 is transparent to other fluorite ______ 83-This paper is suitable for S ® Home Standard (CNS) A4 specifications (21GX297 public director) 571344 A7 ____B7 V. Description of the invention (81) Bismuth components LP12 ~ LP14, LP16 are relatively rotated around the optical axis by 60. The azimuth angle of the lens component LP15 is relatively rotated about 60 ° with respect to the other fluorite lens components LP12 to LP14 and LP16 around the optical axis. (Fig. 25 (c)% & "The 30 component of the f component aberration becomes smaller, and the psF value also rises to about 95.8. In this way, the crystal axis azimuth of an equiaxed crystal material is changed. The optical performance of the projection optical system can be improved. Fig. 25 (d) shows the state of Fig. 25 (c) (the azimuth angles of the lens components Lpi 丨 and Lpi5 are centered on the optical axis with respect to other Lao Shi lens components LP12 ~ LP14, LP16 And the relative rotation of 60.) plus lens components LSI to LS 16 made of quartz in the projection optical system, the lens component LS 14 near the pupil is given to correct it as shown in Figure 22 (b) The birefringence profile of the aberrations. As a result, the maximum value of the PSF value becomes 99.82, which is compared with the ideal state of Fig. 25 (a), and the maximum value of PSF is 99 · 92 compared to the case of Fig. 25 (a). In Figure 25 (d), the maximum value of the PSF can be increased to approximately the same value, which obviously improves the optical performance of the projection optical system. According to the example of tf shown in Figure 25, the crystal of the component of the Laoshi lens in the projection optical system is used. The axis [111] is consistent with the optical axis, but other crystal axes can also be matched with the optical axis. Fig. 26 (a) shows that the optical axis of the lens components LP11 and LP12 of the fluorite lens components LP11 to LP16 of the projection optical system is consistent with the Laoshi crystal axis [110], and the lens components LP13 and LP14 are matched. The point image intensity distribution when the optical axis coincides with the fluorite crystal axis [100] and the optical axes of the lens components LS15 and LS16 coincide with the Laoshi crystal axis [111]. In the case of FIG. 26 (a), it is For lens components LP1 1 and LP 12 with crystal axis [1 10] on the optical axis, relative to -84-This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm)
裝 訂Binding
線 571344 A7 _____ Β7 五、發明説明(82 ) 於一方的透鏡成分之方位角而使另一方的透鏡成分之方位 角以光軸為中心而只回轉90。。並且對於在光軸擁有晶軸 [100]之透鏡成分LP13及LP14,相對於一方的透鏡成分之 方位角而使另一方的透鏡成分之方位角以光軸為中心而只 回轉45 。另外對於在光軸擁有晶軸[1工丨]之透鏡成分lp 15 及LP16,則相對於一方的透鏡成分之方位角而使另一方的 透鏡成分之方位角以光軸為中心而只回轉6〇。。 參閱作為比較例之圖25(b)與圖26(a)即可知,在圖26(a)之 情況下,其PSF值之最大值為98·7ό,而具有良好的光學性 月b 0 另外圖26(b)係對於圖26(a)之狀態再加上在投影光學系統 中由石英構成之透鏡成分LSI〜LS 16中,對於瞳附近之透鏡 成分LSI 4賦予用以補正於圖26(a)所示像差所需雙折射分布 時在光軸上所得之點像強度分布。藉此其pSF值之最大值 將變成99.76。這與圖25(a)之理想狀態相較,相對於圖 25(a)之場合的psf最大值為99.92,在圖26(b)則可使PSF最 大值提南至大致相同之值,顯然可更加改善投影光學系統 之光學性能。 上述各實施形態之曝光裝置,藉照明裝置照明標線片(遮 光罩)(照明工序),並使用投影光學系統使形成於遮光罩之 轉印用圖案曝光於光敏性基板(曝光工序),即可製造微裝 置(半導體元件、攝像元件、液晶顯示元件、薄膜磁頭等) 。以下參閱圖27之流程圖說明藉由使用各實施形態之曝光 裝置而在作為光敏性基板的晶圓等形成特定的電路圖案,Line 571344 A7 _____ Β7 V. Description of the Invention (82) The azimuth of one lens component and the azimuth of the other lens component are centered around the optical axis and rotated only 90 degrees. . And for lens components LP13 and LP14 having a crystal axis [100] on the optical axis, the azimuth of the other lens component is rotated around the optical axis by 45 with respect to the azimuth of one lens component. In addition, for lens components lp 15 and LP16 that have a crystal axis [1 工 丨] on the optical axis, the azimuth of the other lens component is rotated around the optical axis by only 6 relative to the azimuth of the lens component of the other. 〇. . Referring to FIGS. 25 (b) and 26 (a) as comparative examples, it can be seen that in the case of FIG. 26 (a), the maximum value of the PSF value is 98 · 7ό, and it has good optical properties. Fig. 26 (b) shows the state of Fig. 26 (a) plus the lens components LSI to LS 16 made of quartz in the projection optical system, and the lens component LSI 4 near the pupil is provided to correct it in Fig. 26 ( a) The point image intensity distribution obtained on the optical axis for the required birefringence distribution of the aberrations shown. As a result, the maximum pSF value will become 99.76. Compared with the ideal state of Fig. 25 (a), the maximum value of psf is 99.92 compared to the case of Fig. 25 (a), and the maximum value of PSF can be raised to approximately the same value in Fig. 26 (b). Obviously Can further improve the optical performance of the projection optical system. The exposure apparatus of each of the above embodiments illuminates the reticle (light hood) by the lighting device (lighting process), and uses a projection optical system to expose the transfer pattern formed on the light hood to the photosensitive substrate (exposure process). Micro devices (semiconductor elements, imaging elements, liquid crystal display elements, thin-film magnetic heads, etc.) can be manufactured. Hereinafter, referring to the flowchart of FIG. 27, a specific circuit pattern is formed on a wafer or the like as a photosensitive substrate by using the exposure apparatus of each embodiment.
571344 五、發明説明(83 ) 而製造作為微裝置的半導體裝置時之一手法例子。 首先在圖27之步驟301,則在一批量之晶圓上蒸 膜:接著在其次之步驟302,則在其一批量之晶圓上的 屬膜上塗布光阻材料。之後在步驟3〇3,使用各實施形俨 之曝光裝置,使遮光罩上之圖案的像經由其投影光學^ 而依序曝光轉印於該-批量之晶圓上的各拍攝區域:然= 在步驟304 ,經實施該一批量之晶圓上的光阻材料之顯影 處理後,在步驟305 ,則在該一批量之晶圓上以光阻材= 圖案為遮光罩而實施蝕刻處理,藉此即可使對應於遮光罩 上(圖案的電路圖案形成於各晶圓上之各拍攝區域。 (後,再行實施上面之層的電路圖案形成等,即可製得 半導體元件等之裝置。若依照上述半導體裝置製造方法, 即可在優越良率下製得具有極其微小的電路圖案之半導體 裝置。此外,在步驟301〜步驟3〇5,雖將金屬蒸鍍於晶圓 上’並將光阻材料塗布於該金屬膜上後實施曝光、顯影、 蚀刻之各工序’但不用說也可在這些工序之前,經在晶圓 上形成矽之氧化膜後在該矽的氧化膜上塗布光阻材料,然 後實施曝光、顯影、蝕刻之各工序。 另在各實施形態之曝光裝置,也可藉在基板(玻璃基板) 上形成持定的圖案(電路圖案、電極圖案)而製得作為微裝 置之液晶顯示元件。以下參閱圖28之流程圖,說明此時之 手法一例子。圖28中,在圖案形成工序401,則使用各實 施形態之曝光裝置而實施使遮光罩上之圖案轉印曝光於光 敏性基板(塗上光阻材料之玻璃基板)之所謂的光刻術之圖 ________ - 86 - 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 571344571344 V. Description of the Invention (83) An example of a method for manufacturing a semiconductor device as a micro device. First, in step 301 in FIG. 27, a film is evaporated on a batch of wafers; then in step 302, a photoresist material is coated on the metal film on the batch of wafers. Then, in step 303, using the exposure device of each embodiment, the image of the pattern on the hood is sequentially exposed through the projection optics ^ and transferred to each shooting area on the wafer of this batch: Ran = In step 304, after the development process of the photoresist material on the batch of wafers is performed, in step 305, an etching process is performed on the batch of wafers with the photoresist material = pattern as a light shield. In this way, a circuit pattern corresponding to the hood (patterned circuit pattern is formed in each imaging region on each wafer.) Afterwards, the circuit pattern formation of the upper layer and the like can be performed to obtain a device such as a semiconductor element. According to the above-mentioned method for manufacturing a semiconductor device, a semiconductor device having an extremely minute circuit pattern can be manufactured with a superior yield. In addition, in steps 301 to 305, although the metal is vapor-deposited on the wafer 'and After the photoresist material is coated on the metal film, the steps of exposure, development, and etching are performed. However, it is needless to say that before these steps, a silicon oxide film is formed on the wafer, and then light is applied to the silicon oxide film. Resistance material Then, each step of exposure, development, and etching is performed. In addition, in the exposure apparatus of each embodiment, a fixed pattern (circuit pattern, electrode pattern) can be formed on a substrate (glass substrate) to prepare a liquid crystal as a microdevice. Display element. Referring to the flowchart of FIG. 28, an example of the method at this time will be described. In FIG. 28, in the pattern forming step 401, the exposure device of each embodiment is used to carry out the pattern transfer exposure on the hood to the photosensitive Of the so-called photolithography of a flexible substrate (a glass substrate coated with photoresist material) ________-86-This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) 571344
案形成工彳。藉此光刻圖案形成工序,可使含有眾多的電 極等特定圖案形成於光敏性基板上。之後使經曝光處理之 基板經由顯影工序、蝕刻工序、標線片剝離工序等各工序 ,即可在基板上形成出特定的圖t,然後執行後續之彩色 濾光片形成工序402。The case was formed. By this photolithography pattern forming step, a specific pattern including a large number of electrodes can be formed on a photosensitive substrate. Thereafter, the substrate subjected to the exposure process is subjected to various processes such as a development process, an etching process, and a reticle peeling process to form a specific pattern t on the substrate, and then a subsequent color filter forming process 402 is performed.
装 在彩色濾光片形成工序402,則形成使眾多對應於r (紅) 、G (綠)、B (藍)之三個點(dot)之組排列成矩陣狀,或使複 數個卜G、B之三條帶㈣色帶之組向水平掃描線方向排 列而成之彩色濾光片。然後經彩色濾光片形成工序4〇2之 後,實施液晶單元組裝工序403。在液晶單元組裝工序4〇3 則使用經在圖案形成工序401所得之具有特定圖案之基板 ,及在彩色濾光片形成工序402所得之彩色濾光片等而組 裝液晶面板(液晶單元)。在液晶單元組裝工序4〇3則將液晶 注入於例如在圖案形成工序401所得之具有特定圖案之基Installed in the color filter forming step 402, forming a group of a plurality of dots corresponding to r (red), G (green), and B (blue) in a matrix or a plurality of G A color filter formed by the three groups of B and B bands arranged in the direction of the horizontal scanning line. Then, after the color filter forming step 4202, a liquid crystal cell assembling step 403 is performed. In the liquid crystal cell assembly step 403, a liquid crystal panel (liquid crystal cell) is assembled using a substrate having a specific pattern obtained in the pattern forming step 401 and a color filter obtained in the color filter forming step 402. In the liquid crystal cell assembling step 403, liquid crystal is injected into a substrate having a specific pattern obtained, for example, in the pattern forming step 401.
線 板與在彩色濾光片形成工序402所得之彩色濾光片間而製 造液晶面板(液晶單元)。 然後在模組組裝工序404 ,則裝上用以使經組裝妥的液 晶面板(液晶單元)執行顯示動作之電路、背光等各零組件 ,而製成液晶顯示元件❹若依照上述液晶顯示元件之製造 方法,即可在優越良率下製得具有極其微小的電路圖案之 液晶顯示元件。 [發明之效果] 综上所述,若依照本發明,則即使使用例如像螢石具有 固有雙折射之結晶材料,也能在實質上不致於受到雙折射 ________- 87 - 本紙張尺度適用中國國家標準(CNS) A4規格(21〇 X 297公爱) 571344A liquid crystal panel (liquid crystal cell) is manufactured between the line plate and the color filters obtained in the color filter forming step 402. Then, in the module assembly process 404, the components such as a circuit and a backlight for causing the assembled liquid crystal panel (liquid crystal unit) to perform a display operation are installed, and a liquid crystal display element is manufactured. The manufacturing method can produce a liquid crystal display element with extremely minute circuit patterns with excellent yield. [Effects of the Invention] In summary, according to the present invention, even if a crystalline material such as fluorite has inherent birefringence, it can be substantially protected from birefringence. ________- 87-This paper is applicable to China National Standard (CNS) A4 specification (21〇X 297 public love) 571344
發明説明 影響下確保良好的光學性能。 [圖式之簡要說明] 圖1係顯示本發明第—實施形態之投影光學系統之製造 方法概略流程圖。 圖2係概略顯示本發明第一實施形態設計工序S1之流程 圖。 圖3係顯不本發明第一實施形態之投影光學系統之光學 性能評估點一例子圖。 圖4係用以說明本發明第一實施形態步驟S12的詳細内容 之流程圖。 圖5係用以說明本發明第一實施形態之等軸晶系結晶材 料之晶軸方位圖。 圖6係顯示本發明第一實施形態之結晶材料準備工序S2 的詳細内容之流程圖。 圖7係概略顯示勞厄攝像機之圖。 圖8係顯7F雙折射測定機之概略結構圖。 圖9係顯示用以測定透鏡面形狀誤差之干涉儀裝置概略 結構圖。 圖10係顯示本發明第二實施形態之投影光學系統之製造 方法概略流程圖。 圖11(a)〜11(e)係顯示藉組合複數個等軸晶系之結晶材料 而使固有雙折射減小之手法的一例子圖。 圖12係概略顯示用以測定折射率絕對值及折射率分布之 干涉儀裝置之圖。 __ - 88 - &張尺度適用中國國家標準(CNS) Αίϋ(210 X ------------- 571344 A7 B7Description of the invention Ensure good optical performance under influence. [Brief description of the drawings] Fig. 1 is a schematic flowchart showing a manufacturing method of a projection optical system according to a first embodiment of the present invention. Fig. 2 is a flowchart schematically showing a design step S1 of the first embodiment of the present invention. Fig. 3 is a diagram showing an example of the optical performance evaluation points of the projection optical system according to the first embodiment of the present invention. Fig. 4 is a flowchart for explaining details of step S12 in the first embodiment of the present invention. Fig. 5 is a diagram illustrating a crystal axis orientation of an equiaxed crystal system crystalline material according to the first embodiment of the present invention. FIG. 6 is a flowchart showing details of the crystalline material preparation step S2 according to the first embodiment of the present invention. Fig. 7 is a diagram schematically showing a Laue camera. Fig. 8 is a schematic configuration diagram of a 7F birefringence measuring machine. Fig. 9 is a schematic configuration diagram showing an interferometer device for measuring a lens surface shape error. Fig. 10 is a schematic flowchart showing a manufacturing method of a projection optical system according to a second embodiment of the present invention. 11 (a) to 11 (e) are diagrams showing an example of a method for reducing the intrinsic birefringence by combining a plurality of equiaxed crystal system crystalline materials. Fig. 12 is a diagram schematically showing an interferometer device for measuring an absolute refractive index value and a refractive index distribution. __-88-& Zhang scale is applicable to Chinese National Standard (CNS) Αίϋ (210 X ------------- 571344 A7 B7
圖13係顯示本發明第二實施形態投影光學系統製造方法 之組裝工序S 5的詳細内容之流程圖。 ° 圖!4係概略顯示使用相位恢復法原理的像差測定裝置之 圖。 圖15係概略顯不本發明第二實施形態之投影光學系統外 部調整裝置之圖。 圖16(a)〜16(c)係用以說明供形成非球面之光學構件及/或 供變更雙折射分布之光學構件圖。 圖17係概略顯示具有依第_實施形態或第二實施形態所 製造投影光學系統之曝光裝置之圖。 圖18(a)〜18(c)係以模式顯示作為藉組合複數個等軸晶系 之結晶材料而使固有雙折射減小之手法的一例子之第=實 施形態投影光學系統之圖。 圖19(a)〜19(c)係以模式顯示作為藉組合複數個等軸晶系 之結晶材料而使固有雙折射減小之手法的一例子之第:實 施形態投影光學系統之圖。 圖20(a)〜20(c)係以模式顯示作為藉組合複數個等轴晶系 之結晶材料而使固有雙折射減小之手法的一例子之第二實 施形態投影光學系統之圖。 η 圖21係顯示作為本發明數值實施例之第一實施例投影光 學系統之透鏡結構圖。 … 圖22(a)〜22(c)係顯示第一實施例投影光學系統之點 度分布。 · $ 圖23(a)、23(b)係顯示第一實施例投影光學系統之點像強 -89 - 本紙張尺度適财ϋ时標準(CNS) G^1Qx 297公⑹ 571344 A7 B7 五 、發明説明(87 ) 度分布。 圖24係顯示作為本發明數值實施例之第二實施例投影光 學系統之透鏡結構圖。 圖25(a)〜25(d)係顯示第二實施例投影光學系統之點像強 度分布。 圖26(a)、26(b)係顯示第二實施例投影光學系統之點像強 度分布。 圖27係欲製得作為微裝置的半導體裝置時之手法流程圖。 圖28係欲製得作為微裝置的液晶顯示元件時之手法流程 圖。 [元件符號之說明] R :標線片 W :晶圓 PL :投影光學系統 -90 - 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公釐)Fig. 13 is a flowchart showing the details of the assembling process S5 of the manufacturing method of the projection optical system according to the second embodiment of the present invention. ° Figure! 4 is a diagram showing an aberration measuring device using the principle of the phase recovery method. Fig. 15 is a diagram schematically showing an external adjustment device of a projection optical system according to a second embodiment of the present invention. 16 (a) to 16 (c) are diagrams for explaining an optical member for forming an aspherical surface and / or an optical member for changing a birefringence distribution. Fig. 17 is a diagram schematically showing an exposure apparatus having a projection optical system manufactured in accordance with the first or second embodiment. Figs. 18 (a) to 18 (c) are diagrams showing the projection optical system as an example of the embodiment of a method for reducing the intrinsic birefringence by combining a plurality of equiaxed crystal system crystalline materials in a pattern. Figs. 19 (a) to 19 (c) are schematic diagrams showing an example of a method of reducing the intrinsic birefringence by combining a plurality of equiaxed crystal system crystalline materials to reduce the intrinsic birefringence. Figs. 20 (a) to 20 (c) are diagrams showing a projection optical system of a second embodiment as an example of a method of reducing intrinsic birefringence by combining a plurality of equiaxed crystal system crystalline materials. Fig. 21 is a diagram showing a lens structure of a projection optical system as a first embodiment of the numerical embodiment of the present invention. ... Figs. 22 (a) to 22 (c) show the point distribution of the projection optical system of the first embodiment. Figure 23 (a) and 23 (b) show the point image intensity of the projection optical system of the first embodiment-89-This paper is a standard for time and money (CNS) G ^ 1Qx 297 ⑹ 571344 A7 B7 V. DESCRIPTION OF THE INVENTION (87) Degree distribution. Fig. 24 is a diagram showing a lens structure of a projection optical system as a second embodiment of the numerical embodiment of the present invention. Figures 25 (a) to 25 (d) show the point image intensity distribution of the projection optical system of the second embodiment. Figures 26 (a) and 26 (b) show the point image intensity distribution of the projection optical system of the second embodiment. FIG. 27 is a flowchart of a method for manufacturing a semiconductor device as a micro device. Fig. 28 is a flow chart showing a method when a liquid crystal display element as a microdevice is to be produced. [Explanation of component symbols] R: Graticule W: Wafer PL: Projection optical system -90-This paper size applies to China National Standard (CNS) A4 (210X 297 mm)
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US7292388B2 (en) | 2002-05-08 | 2007-11-06 | Carl Zeiss Smt Ag | Lens made of a crystalline material |
WO2003096124A1 (en) * | 2002-05-08 | 2003-11-20 | Carl Zeiss Smt Ag | Lens consisting of a crystalline material |
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JP4524224B2 (en) * | 2005-07-22 | 2010-08-11 | オリンパス株式会社 | Lens centering device, lens centering method, and lens centering program |
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CN102507620A (en) * | 2011-10-18 | 2012-06-20 | 丹东奥龙射线仪器有限公司 | Device for acquiring crystal diffraction spot |
CN102507620B (en) * | 2011-10-18 | 2013-06-26 | 丹东奥龙射线仪器有限公司 | Device for acquiring crystal diffraction spot |
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