TW554412B - Optical system, projection optical system, exposure device having the projection optical system, and method for manufacturing micro device using the exposure device - Google Patents

Abstract

The present invention provides an optical system capable of adjusting the rotation-asymmetric optical characteristics (for example, rotation-asymmetric astigmatism and magnification error component) with respect to the optical axis of the optical system without degrading the focusing performance by the effect of double refraction. In this optical system, a toric lens L2 formed of fluorite and having rotation-asymmetric power and a corrected lens L1 formed of fluorite form a pair, and the corrected lens L1 is disposed so that the crystal axis thereof is in a predetermined positional relationship with respect to the crystal axis of the toric lens L2. In addition, the toric lens L2 and the corrected lens L1 are rotatable around the optical axis AX, and movable across the optical axis AX, and the predetermined positional relationship can be maintained even when the toric lens L2 is rotated and moved.

Description

554412 A7 B7 V. Description of the Invention (1) [Technical Field of the Invention] The present invention relates to manufacturing steps of a semiconductor element, a liquid crystal display element, an imaging element, a thin film magnetic head, and other micro-devices. The exposure device used is set in the exposure. An optical system and a projection optical system on the device, and a manufacturing method of a micro device using the exposure device. [Previous technology] When manufacturing semiconductor elements, liquid crystal display elements, imaging elements, thin-film magnetic heads, and other microdevices, a fine pattern formed on a reticle used as a mask is often transferred to a photoresist coated by a projection optical system. Uniform exposure type (step exposure device, etc.) on a substrate such as a wafer or a glass plate, or projection exposure device of a scanning exposure type such as a stepping and scanning method. In order to faithfully transfer a fine pattern on a substrate by using such an exposure device, it is necessary to improve the resolution of a projected image projected on the substrate, and to improve the flatness of the image plane, and to reduce astigmatism, aberration, Various aberrations such as distortion aberrations (Dlst0rtln). In order to improve the resolution of the projected image, the illumination light emitted from the light source must be shortened and a higher numerical aperture (N.A.) of the projection optical system must be designed. Therefore, we actively design and develop light sources (such as fluorine lasers (wavelength: 157 nm)) that emit light in the vacuum ultraviolet region with a wavelength below 2000, and projection optical systems with high numerical aperture. In addition, in order to suppress various aberrations remaining on the projection optical system, the optical components constituting the projection optical system are manufactured with high accuracy, and when assembling these optical components to manufacture the projection optical system, the assembly accuracy of the Nanyang can be improved. However, in order to achieve high manufacturing accuracy and assembly accuracy, the cost is unrealistic. Therefore, as disclosed in Japanese Unexamined Patent Publication No. 7_183 丨 90, there is a kind of non-rotating -4-this paper size applies the Chinese National Standard (CNS) A4 specification (210X 297 mm) -------- 554412 A7 —— _B7 _ 5. Description of the invention (2) The lens of M is assembled in the projection optical system, and the lens is rotated around the optical axis of the projection optical system and the optical axis, and the off-axis aberration components such as rotation asymmetric can be adjusted ( Astigmatic aberration, curvature of field, etc.) and rotational asymmetric optical error components, such as rotational asymmetric optical characteristics, and suppress costs to achieve high-performance projection optical systems with high durability and reproducibility Technology. [Problems to be Solved by the Invention] However, when using light in the vacuum ultraviolet region with a wavelength of less than 200 nm as the light for exposure, a crystal currently commonly used as a material for a light-transmitting optical element such as a lens is affected by absorption. Significantly difficult to use. Therefore, from the viewpoint of transmittance, light-transmitting optical materials, especially those that are disposed in a projection optical system, must use calcium fluoride (fluorite: CaF2), barium fluoride (BaF2), and others. Fluoride crystals. An exposure device equipped with a fluorine laser light source basically designs and develops a projection optical system including optical elements such as a lens made of fluorite. Since fluorite is a cubic crystal, its crystal structure is optically isotropic, and there is essentially no birefringence. In addition, in previous experiments using light in the visible light region, only small birefringence (random caused by internal stress) was observed in fluorite. However, a lithography-related seminar held on May 15, 2001 (2nd

In Inteinational Symposium on 157nm Lithography), John H. Burnett of NIST in the United States and others published experimentally and theoretically confirming the existence of intrinsic birefringence in fluorite. According to this publication, the birefringence of fluorite has the direction of the crystal axis [m] and its equivalent crystal axis [— 〖1 1], [I—1 1], [1 1 — 1] direction, and the crystal axis [ 1 〇〇] Direction and this paper size are applicable to China National Standard (CNS) A4 specification (210 X 297 mm) 554412 A7-~ ----- 67 _ V. Description of the invention (3) Equivalent crystal axis The [010] and [001] directions are almost zero, and the other directions are not substantially zero. In particular, the crystal axes [110], [一 110], [101], [~ 1〇1], [〇11], 一 1] have six directions, with a maximum wavelength of 575 nm to 65 nm / cm. The maximum refraction value for a wavelength of 193 nm is 3.6 nm / cm. These birefringence values are substantially larger than the random birefringence allowable value of 1 nm / cm, and the influence of birefringence may be accumulated only by a non-random portion through several lenses. In the prior art, since the birefringence of fluorite was not taken into consideration when designing a projection optical system, from the viewpoint of ease of processing, the crystal axis t111] was usually made to coincide with the optical axis. At this time, because the NA (numerical aperture) of the projection optical system is large, light that is tilted to a considerable extent from the crystallographic axis [11 丨] also passes through light-transmitting optical elements such as lenses, and the imaging performance deteriorates due to the influence of birefringence. Therefore, it is necessary to design by combining the crystal orientations of various light-transmitting optical elements constituting the projection optical system to offset the influence of birefringence. When designing a projection optical system including a fluorite-light-transmitting optical element, in order to adjust the rotational asymmetric optical characteristics of the projection optical system, reduce costs, and realize a high-performance projection optical system with high durability and reproducibility 'and The same lens as the lens shown in the aforementioned Japanese Patent Application Laid-Open No. 7-1 83 190 is also arranged in the projection optical system. However, from the viewpoint of improving the transmittance, the k-mirror is also formed by fluorite and also rotates on the azimuth of each surface constituting the crystal of the lens by the rotation of the lens. Therefore, the asymmetric optical characteristics of the projection optical system are corrected. When the lens is rotated, there is still a problem that imaging performance deteriorates due to the influence of birefringence. In view of the above-mentioned problems, the object of the present invention is to provide a paper size that is not subject to the Chinese National Standards (CNS) A4 (210 X 297 mm).

In the case that the imaging performance is deteriorated due to the influence of refraction, the optical axis of the optical system can be adjusted with rotational asymmetric optical characteristics (such as rotational asymmetric off-axis aberration components (astigmatism aberration, image plane curvature, etc.) and rotational asymmetry Symmetrical magnification error component, etc.), an optical system and a projection optical system with excellent durability and reproducibility, an exposure device provided with the projection optical system, and a manufacturing method of a microdevice using the exposure device. [Means for Solving Problems] In order to solve the above-mentioned problems, the optical system of the first aspect of the present invention is characterized in that a plurality of optical members are arranged along the optical axis (AX) and include: first optical members (L2, L3, L6) L7), which is formed of a crystalline optical material that transmits light a at a wavelength of 200 nmW, and has rotational asymmetric energy to the optical axis (AX) of the aforementioned optical system; and at least one second The optical member (Ll, L4, L 'L8) is formed of a crystalline optical material that substantially transmits light at a wavelength of 2000 nm, and the crystalline axis is configured to be the same as the aforementioned first optical member (L2, L3, The crystal axes of L6, L7) have a specific positional relationship. The invention can correct the optical characteristics of rotational asymmetry to the optical axis of the optical system. Therefore, even if the first optical member having rotational asymmetry energy is arranged in the optical system, the first optical member is formed by the crystal axis. The second optical member is arranged in a specific positional relationship with the crystal axis of the first optical member. Therefore, even if the first optical member has birefringence for light having a wavelength below 200 nm, its influence is reduced. In the case that the imaging performance is not deteriorated due to the phenomenon of birefringence, the optical axis of the optical system can be corrected for asymmetric optical characteristics of rotation. / In addition, the optical system of the first point of the present invention is characterized in that:

554412 A7 B7

V. Description of the Invention (5 Optical member (L2, L3, L6, L7) and the aforementioned second optical member (Ll, u L8) constitute a state in which a specific positional relationship of the aforementioned crystal axis is maintained around the aforementioned optical axis (AX) Rotating, or the first optical member (with L3, L6, L7) and the second optical member (Li, L4, L5, u) can be formed in a horizontal state while maintaining a specific positional relationship of the crystal axis. Move in the direction that cuts the aforementioned optical axis (AX). According to the present invention, even if the first optical member is rotated around the optical axis, or moved in a direction transverse to the optical axis, the second optical member is held in the direction of the crystal axis. Rotate around the optical axis or move in a direction transverse to the optical axis under a specific positional relationship, so the effect of birefringence does not depend on the rotation angle around the optical axis of the first optical element or in the direction transverse to the optical axis The amount of movement of the optical system can be changed, so that the optical characteristics of the optical axis of the optical system can be adjusted to be asymmetric without the deterioration of imaging performance due to the influence of the birefringence. One optics The member (L2, L3) and the second optical member (L1, L4) are arranged on the incident end side of the optical system, and the first optical member (L6, L7) and the second optical member (L5, L8) are It is arranged on or near the pupil plane of the aforementioned optical system. Alas, with the present invention, the first and second optical members arranged on the incident end side of the optical system can minimize the rotational asymmetry of the optical system. The correction of off-axis aberration components (such as astigmatic aberrations) and the correction of the symmetric magnification error can be minimized by rotating the optical system by disposing it on the diaphragm or its near optical member and the second optical member. The correction of the magnification error increases the correction of rotationally asymmetric off-axis aberration components (such as astigmatic aberration). Therefore, it can be modified or adjusted individually according to the type.

554412

Optical characteristics of the rotation of the optical axis of the entire pair of optical systems. In addition, the first optical component (L2, L3, L6, L7) of the optical system according to the first aspect of the invention should include two directions orthogonal to each other in a plane orthogonal to the optical axis (Αχ) of the aforementioned optical system. Different toric optical components. Furthermore, the optical system according to the first aspect of the present invention, the light beam incident on the first optical member (L2, L3, L6, L7) and the light beam passing through the first optical member (l2, L3, L6, L7) and the foregoing The angle formed by the optical axis (Αχ) of the lighting system should be set below 20 degrees. Furthermore, the aforementioned first optical member (L2, L3, L6, L7) and the aforementioned second optical member (L1, u, [5, u)) of the optical system according to the first aspect of the present invention should preferably be arranged to have their crystal axes [100] Or a crystal axis which is optically equivalent to the crystal axis [100], which is substantially the same as the optical axis (AX) of the aforementioned optical system, and rotates relative to the optical axis (AX) by about 45 degrees relative to the center. The positional relationship is either configured to have its crystal axis [m] or a crystal axis that is optically equivalent to the crystal axis [π 丨], which is approximately the same as the optical axis (AX) of the aforementioned optical system, and is based on the aforementioned optical axis. (AX) is a positional relationship in which the center is relatively rotated only approximately 60 degrees, or is arranged to have a crystal axis [1 1 0] or a crystal axis optically equivalent to the crystal axis [11 〇], and the light of the aforementioned optical system The axis (AX) is approximately the same and has a positional relationship of relative rotation of approximately 90 degrees with the optical axis (AX) as the center. Furthermore, in the optical system of the first aspect of the present invention, the crystal optical material of the first optical member (L2, L3, L6, L7) and the second optical member L5, L8) is preferably calcium fluoride or barium fluoride. In order to solve the above problems, the optical system of the second aspect of the present invention is characterized in that a plurality of optical members are arranged along the optical axis (AX) and includes: first light -9-This paper standard is applicable to the Chinese National Standard (CNS) A4 specifications (210X 297 mm) 554412 A7 B7 V. Description of the invention (7 academic components (L2, L6)), which is formed by crystalline optical material that allows light with a wavelength below 200 nm to pass through, and The optical axis (AX) of the system has rotational asymmetric energy; at least one second optical member (LI, L5) is formed of a crystalline optical material that substantially transmits light with a wavelength below 200 nm, and the crystal axis is configured to It has a specific positional relationship with the crystal axis of the aforementioned first optical member (L2, L6); the third optical member (L3, L7) is formed of a crystalline optical material that substantially transmits light having a wavelength below 200 nm And has rotational asymmetric energy to the optical axis (AX) of the aforementioned optical system; and at least one fourth optical member (L4, L8), which is a crystalline optical material that transmits light with a wavelength below 200 nm Formed and crystallized axis It is set to have a specific positional relationship with the crystal axis of the third optical member (L3, L7). In addition, the optical system of the second aspect of the present invention is characterized by the aforementioned / optical member (L2, L6) and the aforementioned first The two optical members (L1, 15) and at least a group of the third optical member (L3, L7) and the fourth optical member (L4, L8) are constituted, while maintaining the specific positional relationship of the crystal axis,旋转 Rotate around the clipped optical axis (AX), or the first optical member (L2, L6) and the second optical member (L1, L5), and the third optical member (L3, L7) And at least one set of the aforementioned fourth optical member (L4, L8) can move in a direction transverse to the aforementioned optical axis (AX) while maintaining a specific positional relationship of the crystal axis. The optical system of the second aspect is characterized in that the fourth optical member (u ~ u) is disposed on the incident end side of the optical system from the aforementioned-optical member, and the fourth optical member is disposed from the first optical member: (L5 ~ L8) are arranged on or near the pupil surface of the optical system. -10-

554412 A7 _____B7 V. Description of the invention (8 ~~ 'In addition, the aforementioned first optical member (L2, L6) and the aforementioned third optical member (L3, L7) of the optical system of the second aspect of the present invention are orthogonal to the front : The plane of the optical axis (AX) of the optical system should include toric optical members with different energy in two directions that are orthogonal to each other. Furthermore, the optical system of the second point of the present invention is characterized in that it is incident on the aforementioned The first optical member (L2, L6) and the third optical member (L3, the beam of the dagger) and the light beam passing through the first optical member (L2, L6) and the third optical member (L3, L7) and the illumination The angle formed by the optical axis (Αχ) of the system is set to less than 20 degrees. At this time, the optical system of the second aspect of the present invention is characterized by the aforementioned first optical member (L2, L6) and the aforementioned second optical member ( li, L5) are arranged so that the crystal axis [1 00] or a crystal axis optically equivalent to the crystal axis [100] is substantially the same as the optical axis (AX) of the aforementioned optical system, and is based on the aforementioned optical axis (Αχ) is a positional relationship in which the center is relatively rotated by approximately 45 degrees. The three optical members (L3, L7) and the aforementioned fourth optical member (L4, L8) should preferably be configured to have a crystal axis [100] or a crystal axis optically equivalent to the crystal axis [〖〇〇], and The optical axis (AX) of the optical system is approximately the same, and the position relationship of the relative rotation of approximately 45 degrees with the aforementioned optical axis (AX) as the center, or is configured to have its crystal axis [1 1 1] or to the crystal axis [ 1 1 1] The optically equivalent crystal axis is approximately the same as the optical axis (AX) of the aforementioned optical system, and has a positional relationship of approximately 60 degrees relative to the optical axis (AX) as the center, or is configured to have The crystal axis [丨 1〇] or a crystal axis which is optically equivalent to the crystal axis [1 丨 0] is substantially the same as the optical axis (AX) of the aforementioned optical system 'and is substantially only centered on the aforementioned optical axis (AX). The positional relationship of relative rotation at 90 degrees. -11-This paper is suitable for SCA standards (CNS) A4 size (21GX 297 public Θ 554412 A7 ____ B7) V. Description of the invention (9) In addition, the optics of the second aspect of the present invention The system is characterized by the aforementioned first optical member (L2, L6) and the aforementioned second optical member (Li, L 5) It is configured to have a crystal axis [11 1] or a crystal axis optically equivalent to the crystal axis [丨 n], which is substantially the same as the optical axis (AX) of the aforementioned optical system, and is based on the aforementioned optical axis (AX) ) Is a positional relationship in which the center is relatively rotated by approximately 60 degrees. At this time, the third optical member (L3, L7) and the fourth optical member (L4, L8) should be configured to have their crystal axes [100] or The crystal axis [100] an optically equivalent crystal axis, which is approximately the same as the optical axis (AX) of the optical system, and has a positional relationship of approximately 45 degrees relative to the optical axis (AX) as the center, or A crystal axis configured to have its crystal axis [111] or optically equivalent to the crystal axis [1 Π], which is approximately the same as the optical axis (AX) of the aforementioned optical system, and is centered on the aforementioned optical axis (AX) Positional relationship of relative rotation of approximately 60 degrees, or the third optical member (L3, L7) and the fourth optical member (L4, L8) are arranged to have or have a crystal axis [1 10]丨 10] The optically equivalent crystal axis is approximately the same as the optical axis (AX) of the aforementioned optical system, and the optical axis (AX AX) is a positional relationship in which the center is relatively rotated by approximately 90 degrees. In addition, the optical system according to the second aspect of the present invention is characterized in that the first optical member (L2, L6) and the second optical member (LI, L5) are arranged so as to have or have a crystal axis [11 1] The axis [110] is an optically equivalent crystal axis, which is approximately the same as the optical axis (AX) of the optical system, and has a positional relationship of approximately 90 degrees relative to the optical axis (AX). At this time, the third optical member (L3, L7) and the fourth optical member (L4, L8) should preferably be arranged to have a crystal axis [100] or a crystal axis [100] -12-i paper. Standard size, China National Standard (CNS) A4 specification (210x 297 public envy) — 554412 A7 B7 5. Description of the invention () Optically equivalent crystal axis, which is approximately the same as the optical axis (AX) of the aforementioned optical system, and The aforementioned optical axis (AX) is a positional relationship in which the center is relatively rotated at approximately 45 degrees, or is configured to have a crystal axis [1 Π] or a crystal axis optically equivalent to the crystal axis [1 1 1], which is the same as the aforementioned The optical axis (AX) of the optical system is approximately the same and has a positional relationship of approximately 60 degrees relative to the optical axis (AX) as the center, or is configured to have its crystal axis [1 10] or to have a crystal axis [11 〇]. ] The optically equivalent crystal axis is approximately the same as the optical axis (AX) of the optical system, and has a positional relationship of approximately 90 degrees relative to the optical axis (AX). In addition, the optical system of the second aspect of the present invention is preferably a crystalline optical material from the aforementioned fourth optical member (L1 to L4, L5 to L8) of the aforementioned first optical member, or a fluorinated phosphor or barium fluoride. The projection optical system (PL, PL1) of the present invention is characterized in that a pattern image formed on a first surface is projected onto a second surface, and the optical system is provided with any one of the items described above. The exposure device of the present invention is characterized in that: a mask stage (RST) is used to set a mask (R) formed with a specific pattern on the first surface; and a substrate is loaded with σ (WST), which is a photosensitive The flexible substrate (W) is set on the aforementioned second surface; the Hu Zhaoming optical system (I0S) is the aforementioned mask (R) whose illumination is set on the aforementioned first surface; and the aforementioned projection optical system (PL, PL1) , Which is to project and expose the pattern image of the mask (R) on the photosensitive substrate (w). The microdevice manufacturing method of the present invention is characterized by comprising: an exposure step (S26) 'which uses the above-mentioned exposure device to expose the pattern of the mask on the photosensitive substrate (w); and a developing step (S27) , Which is to develop the aforementioned photosensitive substrate (w) exposed by the aforementioned exposure step.

554412 A7 B7 V. Description of the invention (11) The so-called first (third) optical member and the second (fourth) optical member in the present invention have a positional relationship with the optical axis as the center and a relative rotation of approximately 45 degrees. Refers to a specific crystal axis (such as the crystal axis [〇1〇], [〇〇1], [〇1] which faces in a different direction from the optical axis of the first (third) optical member and the second (fourth) optical member -1] or [〇 丨 1]) The relative angle of each optical axis as the center is about 45 degrees. In addition, when the axis [100] is used as the optical axis, the rotational asymmetry of the influence of the birefringence centered on the optical axis occurs at a period of 90 degrees. Therefore, the so-called The positional relationship of relative rotation of 45 degrees is synonymous with the positional relationship of only about 45 degrees + (n X 90 degrees) relative rotation around the optical axis (n is an integer at this time). In addition, in the present invention, "the first (third) optical member and the second (fourth) optical member have a positional relationship with the optical axis as the center and relatively relative rotation of approximately 60 degrees" means that the C) Specific crystal axes (such as crystal axis [一 丨 丨 丨], [1 1 one 1], or [1 ~ 1 I]) of the optical axis of the optical component and the second (fourth) optical component in different directions The relative angle of the center is about 60 degrees. In addition, when the crystal axis [1 1 1] is used as the optical axis, the rotational asymmetry of the influence of the birefringence centered on the optical axis occurs at a period of 120 degrees. Therefore, the so-called The positional relationship of relative rotation at 60 degrees is synonymous with a positional relationship of only about 60 degrees + (η × 120 degrees) relative rotation around the optical axis (n is an integer at this time). Furthermore, in the present invention, the so-called first (third) optical member and the second (fourth) optical member have a positional relationship with respect to the optical axis as a center and rotate relative to each other by approximately 90 degrees, and refer to the orientation with the first (third) optical member. Third) The specific crystal axis (such as the crystal axis [〇〇1], [一 丨 I ^ -14-) of the optical component and the optical axis of the second (fourth) optical component in different directions are applicable to the Chinese standard (CNS) ) A4 size (210 X 297 mm) 554412 A7 ----- B7 V. Description of the invention (; ^ — ~ —, [110] or [i — ii]) The relative angle of each optical axis as the center is about 90 degrees In addition, when the axis [110] is used as the optical axis, the rotational asymmetry of the effect of the birefringence centered on the optical axis appears as ⑽ in degrees. Therefore, the so-called The position relationship of the relative rotation of only about 90 degrees at the center is synonymous with the position relationship of only about 90 degrees + (ηχ 180 degrees) relative rotation with the optical axis as the center (n is an integer at this time). Curved optical components can also be polished in one direction of a rotationally symmetric spherical surface, in an orthogonal direction Toric lenses with different energies can also be mirrors with different energies in orthogonal directions, or refractive index distribution lenses with different energies in orthogonal directions. [Implementation of the Invention [Mode] Hereinafter, an optical system, a projection optical system, an exposure device provided with the projection optical system, and a manufacturing method of a microdevice using the exposure device will be described in detail below with reference to the drawings. FIG. 1 shows an embodiment of the present invention. A schematic side view of the general structure of a real k-shaped exposure device. In the following description, the χγζ orthogonal coordinate system shown in FIG. 1 is set, and the positional relationship of each member will be described with reference to the XYZ orthogonal coordinate system. The orthogonal coordinate system is set so that the Z axis and the Z axis are parallel to the paper surface, and the X axis is set in a direction perpendicular to the paper surface. The XYZ coordinate system in the figure is actually set to a plane parallel to the horizontal plane 'along the projection optical system The Z axis of the optical axis direction of the PL is set to the vertical upward direction. The exposure apparatus 10 shown in FIG. 1 is an exposure apparatus of a stepping and scanning method, which uses refraction The optical system is used as the projection optical system PL, so that the -15-used as the mask size of the paper sheet applies the Chinese National Standard (CNS) A4 specification (210 × 297 mm) 554412 A7 B7 V. Description of the invention (13) I-line 11 and as a photosensitive The mask V / of the substrate is moved relative to the projection optical system PL · in a direction of 、 (here, the γ-axis direction shown in FIG. 1), and

The reduced image of the pattern formed on the reticle r is sequentially transferred to each irradiation area set on the mask W. The main structure of the exposure apparatus 10 includes a light source 11 and an illumination optical system IOS, which illuminate a marking line R · with illumination light from the light source u, and a marking stage RST, which is a mask holding the marking line R. Stage; projection light system PL, which projects the light passing through the reticle R onto the wafer; and, round stage WST, which is a substrate stage that holds the wafer w. Light source 10 is a light source that emits laser light below 200 nm, such as argon fluoride excimer laser (oscillation wavelength 193 nm) and fluorine excimer laser (oscillation wavelength 157 · 624 nm). The light source 10 is connected to one end (incident end) of the beam matching unit 12 through an unillustrated light-shielding folding dark box and a duct, and the other end (emission end) of the beam matching unit 12 passes through the internal built-in transfer optics The conduit 13 of the system is connected to the light transmission system 14. Therefore, the laser light emitted from the light source π is sequentially introduced into the illumination optical system 10S through the beam matching unit 12, the duct 13, and the light transmitting system 丨 4. The structure of the illumination optical system IOS includes: a variable dimmer, which is used to adjust the energy of laser light; a beam forming optical system, which is used to shape the cross-sectional shape of the laser light; the first fly-eye microlens , Which is used to uniformize the illuminance distribution of laser light and form a secondary light source with a specific shape (such as circular, belt-shaped, dipole-shaped, quadrupole-shaped); condensing optical system, which The light from the secondary light source formed by the first fly-eye microlens is focused; the second fly-eye microlens is used to further uniformize the illuminance distribution of the laser light; the aperture plate is arranged on the second fly-eye microlens -16 of the lens-This paper size is in accordance with Chinese National Standard (CNS) A4 (210 X 297 mm) 554412 A7 _ B7 V. Description of the invention (14) Injection stands and the 'moving markings are concealed and fixed concealed' its composition A marking concealment mechanism that limits the area illuminated by the illumination light on the marking ruler; and a condenser lens. Illumination optical system IOS having such a structure emits illumination light having a substantially uniform illuminance distribution and a specific cross-sectional shape to illuminate the marking line r. Among the optical components provided with the lighting optical system IOS, the materials of light-transmitting optical elements such as lenses can respond to the wavelength of the illuminating light from fluorite (CaO2: CaF2), magnesium fluoride (MgF2), lithium fluoride ( LiF), barium fluoride (Bafr2), total fluoride (SrF2), LiCAF (Corkelite: LiCaAlF6), LiSAF (LiSrAlF6) 'LiMgAlF6, UBeAlF6, KMgF ;, KCaF3, KSrF; and other fluoride crystals or these mixed crystals Or optical materials such as quartz glass doped with fluorine and hydrogen and other materials that transmit vacuum ultraviolet light. In addition, quartz glass doped with a specific substance has a transmittance that decreases when the wavelength of the illuminating light is shorter than 150 nm. Therefore, when vacuum ultraviolet light with a wavelength of less than 150 nm is used as the illuminating light, the optical material of the optical element can use fluorite ( Calcium fluoride), magnesium fluoride, lithium fluoride, barium fluoride, fluoride, LiCAF (Corkelite), LiSAF (LiSrAlF6), LiMgAlF6, LiBeAlF6, KMgF3, KCaF3, KSrF3, etc. Mixed crystal. In addition, the optical path between the light source 11 and the illumination optical system IOS (including the beam matching unit 1, 2, the duct 1, 3, and the light transmitting system 14) is sealed by a sleeve (not shown), and the light source 11 to the illumination optical system are sealed. In the system 10S, the space closest to the optical member on the r side of the marking line is replaced with an inert gas such as helium and nitrogen, which is a gas having a low absorption rate of exposure light, or is maintained in a substantially vacuum state. The reticle R is held parallel to the XY # plane on the reticle stage RST, and is set on the first surface in the present invention. A specific pattern to be transferred is formed on the marking line R, which is -17- This paper size is in accordance with the Chinese National Standard (CNS) A4 specification (210X297 mm) '' " 554412 A7 B7 along the X axis direction in the pattern area A rectangular (slit-shaped) patterned region having long sides and short sides along the Y-axis direction is illuminated. Reticle stage RST structure By omitting the function of the drive system, the linear drive is performed with a large stroke in the γ-axis direction, and the X-axis direction and Θ ζ direction (direction of rotation around the ζ-axis) can also be driven minutely. And form the position coordinates by using a moving mirror. The interference meter 16 measures and controls the position. The laser interferometer 6 is based on the fixed mirror η fixed to the projection optical system PL, and the position in the X Y plane (including 0 z rotation) of the line stage RST is detected with a resolution of about nm. The pattern formed on the reticle II is transferred onto the wafer w via the projection optical system PL. At this time, the projection optical system PL uses the object surface (the reticle ... side and the image surface (wafer W) side are telecentric, has a circular projection field of view, and is only 1/1 of a refractive optical element (lens element). 4. Refraction optical system with reduction magnification of 5 or 1/6. Therefore, when illumination light is irradiated on the marking line R, light formed in the pattern area on the marking line {1 illuminated by the illumination light is incident on In the projection optical system PL, a part of the inverted image of the pattern is imaged at the center of the circular field of view on the image surface side of the projection optical system, which restricts the formation of a slit or rectangle (polygon). The partial inverted image is reduced and transferred onto a photoresist layer on the surface of one of the plurality of irradiated areas on the wafer W disposed on the imaging surface of the Caishou optical system PL. The lens element included in the projection optical system PL The material can be selected from the fluorite (calcium fluoride: CaFO, magnesium fluoride (MgF2), lithium fluoride (LiF) gasification lock (BaD, gasification record (Sr F2), LiC AF ( Cork elite

LiCaAlF (,), LiSAF (LiSrAlF6), LiMgAlF6, LiBeAlF ,, KMgF3, KCaF3, KSrFj; etc. Fluoride crystals or mixed crystals of these, or -18- This paper size applies Chinese National Standard (CNS) A4 specifications ( 210 X 297 mm) 554412 A7 B7 V. Description of the invention (optical materials such as quartz glass containing heterofluoride and hydrogen and other materials that transmit vacuum ultraviolet light. In addition, the quartz breaking glass doped with specific substances due to the wavelength of illumination light The transmittance decreases when it is shorter than 150 nm. Therefore, when using UV light with a wavelength of less than 150 nm as the illumination light, the optical material of the optical element can make 2 fluorite (calcium fluoride), magnesium fluoride, fluorinated Lithium, barium fluoride, gill fluoride, LiCAF (Corkelite) ^ LiSAF (LiSrA1F6), LiMgAlF, ^ LiBeAlF6, KMgF ;, KCaF3, KSrF3 and other fluoride crystals or mixed crystals. &Quot; Wafer W via wafer The holder 18 is vacuum-absorbed in parallel on the χγ plane on the wafer stage WST, and its surface is set on the second surface of the present invention. In order to optically correspond to a rectangular illumination area on the reticle R, Yu Jing The circle w is formed with long sides along the X-axis direction and A pattern image is formed in a rectangular exposure area with short sides in the γ-axis direction. The wafer stage WST structure can move two-dimensionally along the wafer surface (that is, the χγ plane) by the drive system omitting the pattern. The position coordinate is measured by an interferometer 20 using a moving mirror 19. The position is controlled. The XY position and the rotation amount (deflection amount, roll amount, and pitch amount) of the wafer stage WST are fixed to the mirror of the projection optical system PL. The reference mirror 20 at the lower end of the tube is used as a reference, and a laser interference meter 21 is used to measure the position change of the moving mirror 19 fixed to a part of the wafer stage WST, with a specific decomposition energy, such as 0.5 ~ 1 nm in real time. The above is the general structure of an exposure apparatus according to an embodiment of the present invention. 'Secondly, the projection optical system according to an embodiment of the present invention is described in detail. FIG. 2 is a sectional view of a lens showing the structure of the projection optical system according to an embodiment of the present invention. As shown in FIG. 2, the structure of the projection optical system PL according to this embodiment is arranged from the reticle R positioned on the first surface (object surface), and the lens group G1 is arranged in this order. The scale is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) 554412 A7 B7 V. Description of the invention (17), correction lens L1, toric lens L2, toric lens L3, correction lens L4, lens group G2, G3 , Correction lens L5, toric lens L6, aperture stop AS, toric lens L7, correction lens L8, and lens groups G4 to G6. The projection optical system PL is positioned on the side of the reticle R (object surface) and on the second surface Telecentricity is formed on both sides of the wafer W (image plane) (image plane). As described above, the material of the lens element included in the projection optical system PL is selected from various fluoride crystals according to the wavelength of the illumination light, and 5 described below is again in the lens group g I, Correction lens L 1, toric lens L2, toric lens L3, correcting lens L4, lens group G2, G3, correcting lens L5, toric lens L6, toric lens [7, correcting lens [8, and lens group G4 ~ G6 are all formed of fluorite. The birefringence of Fengshi will be described in detail below. FIG. 3 is an explanatory diagram of a crystal axis orientation of fluorite. Referring to FIG. 3, the crystal axis system of the black stone is defined according to the xyz orthogonal coordinate system of the cubic crystal system. That is, it is defined along the + X axis as the crystal axis [丨 00], along the + y axis as the crystal axis [0 1 0], and along the + z axis as the crystal axis [〇〇 丨]. In addition, in the χχ plane, a direction forming a 45-degree angle with respect to the crystal axis [100] and the crystal axis [〇〇1] is defined as the crystal axis [101], and in the "plane, the crystal 2 [丨 00] and the crystal axis [ 010] The direction forming 45 degrees is defined as the crystal axis, and in the yz plane, the direction forming 45 degrees with respect to the crystal axis [010] and the crystal axis [〇〇1] is defined as the crystal axis [011]. Furthermore, for + χ The axis, + y axis, and + z are defined as the crystal axis by the direction forming the acute angle [Π1]. In addition, Figure 2 only shows the crystal axis of the space defined by the + x axis, + y axis, and +, but Crystal spaces are also defined in other spaces. As mentioned before,:, the direction of the crystal axis [⑴] shown by the solid line in Figure 3, and ,,,, find $ 文 -20-paper size 逋Choi s s' Home Standard (CNS) Ege 丨 21. χ 297 public love) ---------- 554412 A7 B7

t1 — 11], [11 ~ 1] direction, birefringence

The equivalent crystallographic axis [-110], [-101], [〇1-—] in the direction of the unpatterned crystallographic axis [-1 111] is approximately zero (minimum). Similarly, refraction is greatest. Therefore, the light traveling in the direction of the crystal axis [丨 00], [1U] of the fluorite does not cause birefringence (the refractive index difference between two beams with orthogonal polarization planes). Therefore, when the crystal axis [1 〖丨] or crystal axis [100] of an optical element such as a lens made of fluorite is set to be the same as the optical axis AX of the projection optical system PL, the light traveling parallel to the optical axis AX does not Birefringence occurs, so that the direction of light travel does not change depending on the direction of polarized light. On the contrary, the birefringence of the light traveling along the crystal axis [1 丨 〇] shows a deviation in the optical path according to the direction of the polarized light. In addition, in this specification, when it is necessary to strictly define the relative crystal axis orientation, 'if the crystal axis [0 1 1] optically equivalent to a number of crystal axes is changed in sign and arrangement position, and a note (listing) such as [ 01 1], [〇-11], [Π0] and so on. However, if it is not necessary to strictly define the orientation of the crystallographic axis of relativity, the optical axis [1 10] is used to indicate several optical properties such as [011], [0 — 1 1], [1 10], etc. Effective crystal axis. Fluorite showing the birefringence described above is used as the lens group G1, the correction lens L1, the toric lens L2, the toric lens L3, the correction lens L4, the lens group G2, G3, the correction lens L5, the toric lens L6, For toric lens L7, correction lens L8, and lens groups G4 to G6, in order to obtain the projection light -21-This paper size applies the Chinese National Standard (CNS) A4 specification (21〇X 297 mm) 554412 A7 B7 5 Explanation of the invention (19) Xueletong PL has all the optical characteristics' must minimize the influence of birefringence. Therefore, this embodiment uses the method shown below to prevent deterioration of imaging performance due to birefringence. [First method] First, as shown in FIG. 4, consider a light beam incident on a fluorite lens provided in the projection optical system Hachiman at various incident angles. Fig. 4 is a diagram showing a pattern of light beams incident on a fluorite lens provided in a projection optical system PL at various incident angles. In FIG. 4, the plane of the symbol SF indicates the lens surface of the fluorite lens (such as the correction lens L 1) provided by the projection optical system, and AX 1 represents the optical axis of the fluorite lens. The light beam traveling in the projection optical system PL is incident on the lens surface SF (to the optical axis AX 1) at various angles. However, the circle of the notation symbol cR 1 in FIG. 4 is at 10 degrees to the optical axis AX 1 The angle of the incident angle 'comment symbol cR2 is an angle of incidence of 20 degrees to the optical axis AX1, the circle of the annotation symbol CR3 is an angle of incidence of 30 degrees to the optical axis AX', and the circle of the symbol C R4 is directed to light The circle of incidence angle of 40 degrees of the axis aX 1 'note symbol C R5 is a light beam that enters the lens surface SF at an angle of incidence of 50 degrees to the optical axis AX 1 respectively. FIG. 5 is an explanatory diagram of a first method for reducing the influence of birefringence. This method is proposed by John H. Burnett and others of N1ST in the United States. In FIG. 5, the direction perpendicular to the paper surface is set in the direction of the optical axis AX 1. This method, as described above, is to make the crystal axis [1 Π] of a pair of fluorite lenses coincide with the optical axis, and use the optical axis as the center to make the pair of fluorite lenses relatively rotate only 60 degrees. Fig. 5 (a) is a view showing a crystal axis configuration of one fluorite lens, and Fig. 5 (c) is a view showing a crystal axis configuration of the other fluorite lens. Referring to Fig. 5 (a) and Fig. 5 (c), the crystallization axis [1 1 1] is set to be perpendicular to • 22 · This paper size applies the Chinese National Standard (CNS) A4 specification (210X 297 mm) 554412 A7- -------- B7____ V. Description of the invention (20)

I Paper surface direction (optical axis direction) 'The other crystal axes [100], [010], [〇〇1] are respectively arranged in a relationship of only 60 degrees rotation around the optical axis. The amount of birefringence of light incident on the fluorite lens configured as shown in Fig. 5 (a) is shown in Fig. 5 (b), and on the light incident on the fluorite lens configured as shown in (c): The amount of birefringence is shown in Figure 5 (sentence σ, Figure 5 (b) and Figure 5 (d). The five concentric circles shown by dashed lines from the inside represent the light beam incident on the optical axis AX1 at an angle of 10 degrees, respectively. Light beam incident at an angle of 20 degrees on the optical axis AX, light beam incident at an angle of 30 degrees to the optical axis AX1, light beam incident at an angle of 40 degrees to the optical axis AX1, and 50 degrees to the optical axis Αχ1α The light beam incident at an angle. That is, the five concentric circles indicated by dashed lines in FIG. 5 (b) are equivalent to the circles with the symbols cr1 to CR5 in FIG. 4. In addition, this note is shown in FIG. 5 (f). It is the same as in Figs. 6 and 7. In addition, the solid circles in Figs. 5 (b), 5 (d), and 5 (f) indicate areas without birefringence having a large refractive index, and the hollow circles indicate having The area with black birefringence of smaller refractive index, the small circle with a hatched line (see Fig. 7 (f)) indicates the area without birefringence with intermediate refractive index. That is, note the solid circle, empty ~ circle, Or hatching The small circle area is the area with a refractive index regardless of the polarization direction of the incident light. Furthermore, the thick circle and the long double-headed head indicate the direction of the larger refractive index in the area without birefringence, and the thin line The circle and the short double arrow indicate the direction of the smaller refractive index in the area with birefringence. This note is also the same in Figures 6 and 7. At this time, referring to Figures 5 (b) and 5 (d), corresponding to and The region of the crystal axis [11 I] with the same optical axis forms a region having a small refractive index without birefringence. In addition, the region corresponding to the crystal axis [100], [010], and [001] has a larger area. Area with refractive index without birefringence. In addition, corresponding to the crystal axis [ιι〇], [1〇 门, -23- This paper size applies to China National Standard (CNS) A4 specification (210 X 297 mm)- ------ 554412 A7 B7

V. Description of the invention (21) The region of [0⑴] forms a birefringent region having a smaller refractive index of the polarized light in the circumferential direction 'and a refractive index U of the polarized light in the radial direction. Therefore, each fluorite that makes the crystal axis [与] coincide with the optical axis is read for A r and the lens at an angle of 35.26 degrees from the optical axis (the crystal axis [11. and, Ό b, the axis [1 1 0]). The region) is most affected by birefringence. Figure 5 shows the combination of the crystal axis of the fluorite lens shown in Fig. 5 (a) and the fluorite lens shown in Fig. 5 (c). Fig. 5 (f) shows the relationship between the incident light and the light of the fluorite lens. Birefringence map. Referring to FIG. 5 (a), it can be known that, by making the -pair of ronite lenses relatively rotate only 6G degrees, all the _pairs of fluorite lenses can reduce the crystallographic axis with the largest refraction [π〇], [1〇1], [〇1 丨] Impact. However, a region of 35.26 degrees from the optical axis, that is, a region closer to the optical axis, has a birefringent region having a refractive index that is smaller than that of the polarized light in the radial direction. Therefore, the first method proposed by John H. Biimett et al. Is that a light beam incident at an incidence angle of 35 degrees or more is affected to some extent by the birefringence. [Second Method] FIG. 6 is an explanatory diagram of a second method for reducing the influence of birefringence. Fig. 6 is similar to Fig. 5 in that the direction perpendicular to the paper surface is set in the direction of the optical axis AX1. This second method is to make the crystal axis [100] of a pair of fluorite lenses coincide with the optical axis, and center the optical axis so that the pair of fluorite lenses is only 45 degrees relative to the person rotating. Fig. 6 (a) shows a crystal axis configuration diagram of a fluorite lens which is one of a pair of fluorite lenses, and Fig. 6 (c) shows a crystal axis configuration diagram of the other fluorite lens of a pair of fluorite lenses. Referring to FIG. 6 (a) and FIG. 6 (c), the crystal axis [1 00] is set in a direction perpendicular to the paper surface (optical axis direction), and other crystal axes [10 1], [1- 丨], [ 1 〇—1], [1 1 〇] are arranged in a relationship of rotation only 45 degrees around the optical axis. In addition, in Figures 6 (a) and 6 (b), the face of the crystallization axis is shown in brackets. -24- This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 554412 5. Description of the invention (A [1〇〇] The axis that can be seen during observation is superimposed. If it is the crystal axis [1〇1] weight A can be seen = the crystal axis _], it can be seen that the crystal axis overlaps with the crystal axis π _ 10] ^ _ 1 0], the crystal axis [00-0 ~ 1] which can be seen overlapping with the crystal axis [1〇-1], and the crystal axis [010] which can be seen overlapping with the crystal axis [110]. The amount of birefringence of light entering the fluorite lens configured as shown in Fig. 6 (a) is shown in Fig. 6 (b) 'The amount of birefringence of light entering the fluorite lens configured as shown in Fig. 6 (i) is shown in the figure. 6 (d). Refer to ®16 (b) and Figure 6 (a). The area corresponding to the crystalline axis [100] that is consistent with light: forms a region with a large refractive index without birefringence. In addition, it corresponds to crystals. The area of the axis [111], [1-11 1 丨 ~ i] [11-1] forms a region with a small refractive index without birefringence. Furthermore, corresponding to the crystal car by [101], [m], [110], [Bu 10] The area has a larger refractive index for the polarized light in the circumferential direction , The birefringence region with a smaller refractive index for polarized light in the radial direction. Therefore, the lens elements of each group are most affected in the area of 45 degrees (the angle formed by the crystal axis and the crystal axis [101]). Fig. 6 shows the combination of Fig. 6 (a) showing the configuration of the campsite lens and the figure. Fig. 6 shows the crystal structure of the fluorite lens, and Fig. 6 (f) shows the injection-to-fluorite lens. Diagram of the amount of birefringence of light. Referring to Fig. 6 (f), it can be seen that by making the-pair of rongshi lenses rotate only 45 degrees relative to each other-all _ pairs of fluorite lenses can reduce the effect of the crystallization of the largest birefringence, [1〇 叫], on The region 'where the optical axis forms an angle of 45 degrees', that is, the region away from the optical axis, has a birefringent region having a refractive index greater than that of the polarized light in the radial direction. At this time, in a general projection optical system, the maximum angle between the light beam of each lens element and the light beam is about 35 degrees to 40 degrees. So by using the second -25-

554412 A7 B7 V. Description of the invention (23) The method ′ is not substantially affected by the complex refraction of the crystal axis [101], [10 — 1], [1 10], [10 ~ i]. In addition, 'refer to FIG. 5 (b) and FIG. 5 (d)', because the optical axis of the fluorite lens and the crystal axis [1 1 1] are aligned ', it corresponds to the crystal axis with the largest birefringence [丨 〖〇] [ The region 101], [011] exists at an interval of 120 degrees around the optical axis, and the effect of birefringence with a distribution of 30 appears, that is, the effect of generating frame aberration. Conversely, referring to FIG. 6 (b) and FIG. 6 (d), since the optical axis of the fluorite lens and the crystal axis [100] are made to correspond to the crystal axis with the highest birefringence [丨 〇1], [1〇— ^ The area of [H0], [1-10] exists at 90-degree intervals around the optical axis, and the effect of birefringence with a 40 distribution occurs. Because the pattern to be projected on the wafer is dominated by the vertical and horizontal patterns, if it is a 40 distribution, the effect of astigmatic aberration on the vertical and horizontal patterns will not occur, and the image will not be significantly damaged. Therefore, it is advisable to use the second method to mitigate the effects of birefringence, instead of using the first method to mitigate the effects of birefringence. [Third Method] FIG. 7 is an explanatory diagram of a third method for reducing the influence of birefringence. Fig. 7 is similar to Fig. 5 and Fig. 6 in that the direction perpendicular to the paper surface is set in the direction of the optical axis Ax1. This second method is to make the crystal axis [丨 1 0] of a pair of fluorite lenses coincide with the optical axis and center the optical axis so that the pair of fluorite lenses are only rotated 90 degrees relative to each other. Fig. 7 (a) shows the crystal axis arrangement of a fluorite lens which is one of a pair of fluorite lenses. Fig. 7 (c) shows the crystal axis arrangement of the other fluorite lens of a pair of fluorite lenses. According to Fig. 7 (a) and Fig. 7 (c), the crystal axis [1 1 〇] is set in a direction perpendicular to the paper surface (optical axis direction), and other crystal axes [100], [0 1 0], [ 1 1 1], [II — 1] are arranged in a relationship of only 90-degree rotation around the optical axis. In addition, -26-This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) 554412 A7

In 117 (b) ', the bracketed note shows the axis facing the crystal axis [" 〇]: Feng's axis. If it is the crystal axis _] which can be seen overlapping with the crystal axis [⑴], and the crystal axis [〇〇-1] which can be seen overlapping with the crystal axis ⑴ 1]. The multiplicity of the light that enters the campsite lens arrangement shown in Figure 7 (a) is shown in Figure 2. The multiplicity of the light that enters the fluorite lens arrangement shown in Figure VII is shown in Figure 7 (a). Referring to FIG. 7 (b) and FIG. 7 (a), the area corresponding to the crystalline MUO that coincides with the optical axis] is formed in the opposite direction. The refractive index of polarized light is larger, and the direction of the other direction (the direction orthogonal to the direction of one direction). ) A birefringent region where the refractive index of polarized light is small. In addition, the region corresponding to the crystal axis t1], [010] forms a region having a large refractive index without birefringence. Furthermore, the region 庑 about the crystal axis [⑴], howl] forms a region with a small refractive index and ㈣ refraction. ... and Fig. 7 (e) shows the combination of the fluorite lens shown in Fig. 7 (a) and Fig. 7 (the crystalline axis when the fluorite lens without disposition is displayed, and Fig. 7 (f) shows the injection A graph of the birefringence of the light of a pair of fluorite lenses. In addition, for convenience of illustration in FIG. 7 (e), the crystal axis shown in FIG. 7 (c) is enlarged. Referring to FIG. 7 (f), by making A pair of fluorite lenses only rotates relative to each other by 90 degrees, and all of the pair of fluorite lenses have almost no influence of the crystal axis [110] with the largest birefringence, forming a region with an intermediate refractive index near the optical axis without birefringence. That is, when the second method is adopted, it is possible to substantially ensure the good imaging performance without being affected by the birefringence. [Fourth Method] The first method to the third method described above use two fluorite k mirrors. Those who reduce the effect of birefringence on the Shishi lens, but do not eliminate the effect of birefringence. Refer to Figure 5 (f), Figure 6 (f), and Figure 7 (f). Applicable to China National Standard (CNS) A4 (210X 297 mm), 4412

The refractive index difference of the circumferentially polarized light with respect to the azimuth angle centered on the optical axis is due to the refractive index difference itself. The fourth method (here, the first method, the first method, the second method, the first method, the second method, and the second method are used to reduce the effect of birefringence.% Of the orientation of the above optical axis is θ r " The difference in refractive index with the same angle. To remove the difference in refractive index with the same azimuth angle as the center of the optical vehicle, two pieces of fluorite lenses with approximately equal thickness using the brother-method are used to make the opposite direction of the radial direction. The refractive index of the light is higher than the refractive index of the polarized light in the circumferential direction. The two fluorite lenses with the same thickness in the second method are used to make the refractive index of the light deflected in the radial direction lower than that in the circumferential direction. The property of the refractive index of the upper polarized light. This property represents the double refraction of the Yingshi lens with the crystal axis [⑴] as one of the optical axes, and the mirror 'and the crystal axis_] as the optical axis :: The sign is opposite. Therefore, 'the shadow of the complex fold # can be eliminated to a considerable extent by combining a pair of fluorite lenses with the crystal axis [m] as one optical axis and one pair of fluorite lenses with crystal axis [100] as the optical axis. In addition, the above properties are facts discovered by the inventor of this piece. Therefore, the crystal axis [100] is The number of birefringence of the fluorite lens (the difference between the refractive index of light deflected in the radial direction and the refractive index of light deviated in the circumferential direction) of the fluorite lens and one pair of optical axes The fluorite lens has different birefringence settings. In order to eliminate the difference in birefringence settings, the optical path of the fluorite lens with the crystal axis [1 0 0] as one of the optical axes is set according to the difference in the amount of birefringence. Long and the optical path length of the fluorite lens with the crystal axis [111] as one of the optical axes can almost completely eliminate the effect of birefringence. Specifically, the crystal axis [〖〇〇] as one of the optical axes The birefringence of a stone lens is about 1.5 times the birefringence of a fluorite lens with the crystal axis [丨 1 丨] as one of the optical axes. Therefore, it is only necessary to apply China National Standard (CNS) A4 specification (210 X 297 mm) 554412 A7

The axis [1 丨 1] is the optical path length of one pair of fluorite lenses, and the crystal axis [100] is about 15 times the optical path length of one pair of fluorite lenses. The effect of birefringence can be almost completely eliminated by implementing this setting. The above is a combination of using a pair of fluorite lenses with the position of the crystal axis set in the first method and a pair of fluorite lenses with the position of the crystal axis set in the second method to almost completely eliminate complex The effect of refraction. However, similarly to those using the first method, the two fluorite lenses with the same thickness in the second method can make the refractive index of light polarized in the radial direction higher than the refractive index of light polarized in the peripheral direction. . Therefore, the combination of the pair of fluorite lenses with the position relationship of the crystal axis in the second method and the pair of fluorite lenses with the position relationship of the crystal axis in the third method can also almost completely eliminate the effect of birefringence. . Furthermore, since the projection optical system consists of several fluorite lenses, two pairs of fluorite lenses with the positional relationship of the crystal axis can be set using the first method, and the positional relationship of the crystal axis can be set using the second method. Various combinations of two pairs of sidestone lenses, and two pairs of fluorite lenses having a positional relationship of the crystal axis using the third method. In this case, a fluorite lens in which the positional relationship of the crystal axis is set in the first to third methods can be used in combination according to the combination. The foregoing is a description of reducing the influence of the birefringence of a fluorite lens. A task-person will explain each fluorite lens included in the projection optical system PL shown in FIG. 2. Lens group G4 and G4 are those that determine the projection magnification and resolution of the projection optical system = ^ optical performance, and are designed to meet the optical properties required by the projection optical system PL ^. The lens groups G1 to G4 use the above-mentioned fourth to fourth methods, respectively, to -29-

554412 A7 B7 V. Description of the invention (27) Design in a way to minimize the effect of birefringence, or to eliminate it completely. For example, the structure of the lens group G 1 includes four lenses having the positional relationship of the crystal axis set by the fourth method. The same applies to the lens groups G 1 to G 4. The toric lens L2 has a toric surface formed on the exit surface, that is, a surface having different curvatures in two orthogonal directions set in a plane orthogonal to the optical axis AX of the projection optical system PL, and has a rotational non-rotation to the optical axis AX. Symmetrical energy. The toric lens L2 is disposed on the incident end side (the first surface side: the reticle r side) of the projection optical system p1, and is provided to correct the rotation asymmetric magnification error on the optical axis Ax of the projection optical system. The toric lens L2 corresponds to a so-called first optical member of the present invention. The purpose of setting the correction lens L 1 is to mitigate the influence of the birefringence of the toric lens L2 formed of fluorite, and its crystal axis is arranged to have a specific positional relationship with the crystal of the gold stone forming the toric lens L2. Specifically, the crystal axes of the fluorite crystals forming the toric lens L2 and the correction lens L1 are set by using any one of the aforementioned second methods. The correction lens L1 corresponds to a so-called second optical member of the present invention. The correction lens L 1 and the toric lens L2 are configured to be capable of rotating around the optical axis AX while maintaining a specific positional relationship of the crystal axis set using any of the first to third methods described above. In a state where the crystal axis has a specific positional relationship set using any one of the first to third methods described above, the configuration can be moved in a direction transverse to the optical axis AX. The toric lens L3 has a toric surface formed on the incident surface and has rotational asymmetric energy with respect to the optical axis Y. The toric lens L3 is arranged near the toric lens u, that is, it is arranged at the entrance of the projection optical system PL. The immortal u passes through the heart and the eight females (the one side: the marking line -30-

554412 A7 ______ B7 V. Description of the invention (28) R side) The purpose of the setting is to correct the rotational asymmetric magnification error for the optical axis AX of the projection optical system. The toric lens L3 corresponds to a so-called third optical member of the present invention. The purpose of setting the correction lens L4 is to reduce the influence of the birefringence of the toric lens L3 formed of fluorite, and its crystal axis is arranged to have a specific positional relationship with the crystal axis of the fluorite crystal forming the toric lens L3. Specifically, the crystal axes of the fluorite crystals forming the toric lens L3 and the correction lens L4 are set by using any of the aforementioned first to third methods, respectively. The correction lens L4 corresponds to the so-called fourth optical member of the present invention. In addition, the above-mentioned correction lens L3 and the correction lens U can be rotated around the optical axis AX while maintaining a specific position relationship of the crystal axis set using any of the first to second methods described above, and can be used while maintaining In a state where the crystal axis has a specific positional relationship set by any of the above-mentioned third to third methods, the structure can be moved in a direction transverse to the optical axis Ax. The toric lens L2 and the correction lens L1 are combined with the toric lens L3 & the correction lens L4 by using the fourth method described above. At this time, in order to avoid the influence of birefringence as much as possible, it is appropriate to use the first method or the third method to set the position of the crystal car. The toric lens L2 and the correction lens L1; j; use the second method to set the crystal. The toric lens and correction lens L4 'of the positional relationship of the axes, or the toric lens L2 and the correction lens L1 of the second method to set the positional relationship of the crystal axis, use the first method or the third method to set the crystal axis. The positional relationship of the toric lens L3 and the correction lens u. As mentioned above, since the projection optical system PL shown in Figure 2 will be aligned to the optical axis -31-This paper size applies the Chinese National Standard (CNS) A4 specification (210X 297 mm) " I --- 554412 A7 ______B7_ V. Explanation of the invention (29) The two toric lenses L2 and L3 for AX correction of the rotational asymmetry magnification error are set on the incident end side (the first surface side: the ruler side). Therefore, the toric surface is appropriately set. The relative rotation angle between the lens L2 and the optical axis AX, and the relative rotation angle between the toric lens L3 of the toric lens L2 and the optical axis AX, and the position transverse to the optical axis AX can be appropriately set, which can effectively correct the projection optics The magnitude and direction of the rotation asymmetric magnification error of the system PL ·. In addition, when the toric lens L2 is rotated 'with the specific positional relationship of the crystal axis set by using any of the above-mentioned first to third methods maintained, the correction lens L1 is also rotated to make the compound When the curved lens L3 is rotated, the correction lens L4 is also rotated while maintaining the specific position relationship of the crystal axis set by using any one of the aforementioned third to third methods, so it is not caused by the influence of birefringence The imaging performance deteriorates, and the rotation asymmetric magnification error of the projection optical system PL can be corrected. In addition, the aforementioned first method has a birefringence region where the refractive index of the polarized light in the circumferential direction is smaller than the refractive index of the polarized light in the radial direction in a region where the incident light beam forms an angle of 35.26 degrees with respect to the optical axis Ax. A region where the axis AX forms an angle of 45 degrees has a birefringence region having a refractive index greater than that of the polarized light in the radial direction (see FIGS. 5 (f) and 6 (f)). As described above, the toric lens L2 and the correction lens 11 are used to set the positional relationship of the crystal axis by using the first method or the third method in combination, and the toric lens L is used to set the positional relationship of the crystal axis by using the second method in combination. 3 and the correction lens L4, or the toric lens L2 and the correction lens L1 that use the second method to set the positional relationship of the crystal axis, and the toric lens L that uses the first method or the third method to set the positional relationship of the crystal axis in combination 3 and correction lens L 4, can be -32- This paper size is applicable to Chinese National Standard (CNS) A4 specification (210 X 297 mm) 554412 A7 _ B7 V. Description of the invention (3〇) Remaining in these areas is substantially eliminated Refractive index difference. However, when these combinations cannot be used, or in order to further eliminate the effect of birefringence, the light beam that enters at least one of the toric lens L2 and the toric lens L3 forms an angle with the optical axis 乂 and passes through at least these The angle between one beam and the optical axis AX should be set below 35 degrees, and more preferably below 20 degrees. The toric lens L6 has a toric surface formed on the incident surface, and has a rotational asymmetric energy with respect to the optical axis Hagi. The toric lens L6 is disposed near the pupil surface of the projection optical system p L (the surface on which the aperture stop AS is disposed). The purpose of the toric lens L6 is to correct rotational asymmetrical off-axis aberration components remaining in the projection optical system PL (such as Astigmatism). The toric lens L6 corresponds to the so-called first optical member of the present invention. The purpose of setting the correction lens L5 is to reduce the influence of the birefringence of the toric lens L6 formed of fluorite, and to arrange the crystal axis to have a specific positional relationship with the fluorite crystal forming the toric lens L6. Specifically, the crystal axis of the fluorite crystal that forms the toric lens L6 and the correction lens L5 is set using any one of the aforementioned first to third methods. The correction lens L6 corresponds to a so-called third optical member of the present invention. In addition, the toric lens L6 and the correction lens L5 are configured to be capable of rotating around the optical axis Aχ while maintaining a specific position relationship of the crystal axis set using any of the first to third methods. The structure can be moved in a direction transverse to the optical axis of the optical axis in a state where the crystal axis has a specific positional relationship set / defined using any of the third methods described above. It is assumed that the curved lens L7 has a toric surface formed on the exit surface and has rotational asymmetric energy with respect to the optical axis Ax. The toric lens L7 is arranged near the toric lens u, -33-554412 A7 ______B7 V. Description of the invention (31) That is, it is arranged near the pupil surface of the projection optical system PL. The purpose is the same as the toric lens L6. The rotational asymmetrical off-axis aberration components (such as astigmatic aberration) remaining in the projection optical system PL are corrected. This toric lens L7 is equivalent to the so-called third optical member of the present invention. The purpose of setting the correction lens L8 is to reduce the effect of the birefringence of the toric lens L7 formed of fluorite, and to arrange the crystal axis to have a specific positional relationship with the fluorite crystal of the toric lens L7. Specifically, the crystal axes of the fluorite crystals forming the toric lens L7 and the correction lens L8 are set by using any one of the aforementioned first to third methods, respectively. The correction lens L 8 corresponds to a so-called fourth optical member of the present invention. In addition, the toric lens L7 and the correction lens L8 are configured to be able to rotate around the optical axis AX while maintaining a specific position relationship of the crystal axis set using any of the first to third methods. The structure can be moved in a direction transverse to the optical axis Ax in a state where the crystal axis has a specific positional relationship set by any of the first to third methods. The toric lens L6 and the correction lens L5 are combined with the toric lens L7 and the correction lens L 8 by using the fourth method described above. At this time, in order to avoid the influence of birefringence as much as possible, it is suitable to use the first method or the third method in combination to set the toric lens L6 and the correction lens L5 in the positional relationship of the crystal axis, and use the second method to set the compound in the positional relationship of the crystal axis. The curved lens L7 and the corrective lens L 8 ′ or the toric lens L 6 and the corrective lens L 5 that use the second method to set the positional relationship of the crystal axis, use the first method or the third method to set the positional relationship of the crystal axis. The toric lens L 7 and the correction lens 18. -34- This paper size is in accordance with Chinese National Standard (CNS) A4 specification (210 X 297 mm) 5544l2 A7 __B7__ V. Description of the invention (32) Since the projection optical system pl shown in Figure 2 will remain in the projection optical system A pair of toric lenses [6, L7 of the astigmatic aberration in PL are set near the pupil plane. Therefore, by appropriately setting the relative rotation angle of the toric lens L6 and the optical axis Aχ, and the pair of toric lenses L6, The relative rotation angle of the toric lens L7 and the periphery of the optical axis AX, and the position transverse to the optical axis Ax direction is appropriately set, which can effectively correct the magnitude and direction of the rotational asymmetric off-axis aberration component of the projection optical system PL. In addition, when the toric lens L6 is rotated, the correction lens L5 is also rotated to maintain the toric lens L7 while maintaining the specific position relationship of the crystal axis set by using any of the first to third methods described above. During rotation, the correction lens L8 also rotates while maintaining the specific positional relationship of the crystal axis set using any of the above-mentioned first to third methods. Therefore, the imaging performance is not deteriorated due to the influence of birefringence. , Can correct the rotational asymmetric off-axis aberration component of the projection optical system PL. Furthermore, 'when the toric lens L 2, l 3 arranged on the first surface side (the reticle R side) is rotated to correct the magnification error of the rotational asymmetry of the projection optical system PL, the projection optical system can be minimized. The correction of the rotational asymmetric off-axis aberration components (such as astigmatic aberrations) of the system PL, and the correction of the rotational asymmetric magnification error is added to rotate the toric lenses L6, L7 arranged on or near the pupil surface. 'In the case of correcting the rotational asymmetric off-axis aberration components of the projection optical system PL (such as astigmatic aberrations), the correction of the rotational asymmetric magnification error of the projection optical system can be minimized, and the rotational asymmetry can be increased. Correction of symmetrical off-axis aberration components (such as astigmatic aberration). In addition, the toric lenses L6, L7 are also based on the same as the toric lenses L2, L3 -35- This paper size applies the Chinese National Standard (CNS) A4 specification (210X 297 mm) 554412 A7 ___ _ B7 V. Description of the invention (33 ), The angle of the light beam incident on at least one of the toric lens L6 and the toric lens L7 and the optical axis AX, and the angle of the light beam passing through at least one of these and the optical axis AX should be set below 35 degrees, more Should be set below 20 degrees. Next, a projection optical system according to another embodiment of the present invention will be described. Fig. 8 is a side view showing a schematic structure of a projection optical system according to another embodiment of the present invention. The projection optical system PL shown in FIG. 8 is a reflection-refraction type projection optical system. The projection optical system PL1 has: a first imaging optical system (G10 ~ G12, RF1, RF2), which forms an intermediate image of a pattern on the graduation line R according to light from the graduation line R; and a second imaging optical system (Gl3 ~ Gl8), which re-images the image (final image) of the intermediate image in the exposure area on the wafer 42 based on the light from the intermediate image; and includes: a correction optical system (U ~ L4), which corrects the rotational asymmetric magnification error of the projection optical system PL1; and corrects the optical system (L5 ~ L8), which corrects rotational asymmetry such as astigmatic aberrations remaining in the projection optical system PL1 Off-axis aberration components. The first imaging optical system (G 1 0 to G 12, RF 1, RF 2) includes: a lens group G 10 ′, which is arranged along the first optical axis AX 1; and an optical path bending mirror 丨, which is provided to pass through the lens The reflecting surface on which the light of group G1 0 is deflected; the lens group η, g 12, which is arranged along the first optical axis AX2 that crosses the first optical axis AX1 at a specific angle (such as about 90 ~ | 30 degrees); and Concave mirror. The lens groups G 10 to G 12 are each provided with a plurality of lens elements made of fluorite, and the aforementioned fourth method is used to set the positional relationship of the crystal axis of each lens element to reduce the influence of birefringence. The first imaging optical system 1 〇 ~ G 1 2, RF1, RF2) The light reflected by the reflecting surface of the optical path bending mirror rF1 is sequentially passed through -36- This paper standard applies to China National Standard (CNS) A4 specifications ( 210 X 297 mm) 554412 A7 B7 V. Description of the invention (34) The lens group G11, G12 'is reflected by the concave mirror RF2, and again passes through the lenses G12, GH' to the other reflecting surface of the optical path bending mirror RF1. Therefore, an intermediate image of the pattern on the graticule r is formed near the other reflecting surface of the optical path bending mirror RF1. The second imaging optical system (G13 to G18) has: a plurality of lens groups G13 to G18, which are arranged along the first optical axis AX 1; and an aperture stop AS, which is used to control the correlation factor (σ value); and Based on the light of the intermediate image formed by the first imaging optical system (G10 ~ G12, RF1, RF2), a secondary image of the pattern of the reticle R is formed in the exposure area on the wafer ... At this time, the plurality of lenses G13 to G18 are respectively provided with a plurality of lens elements formed of fluorite similarly to the lens groups G10 to G12, and the aforementioned first to fourth methods are used to set the crystal axis of each lens element. Dispose of the positional relationship to mitigate the effects of birefringence. Such a projection optical system is disclosed in FIG. 5 of U.S. Patent No. 5,805, 334 or Japanese Patent Application Laid-Open No. 2000-471 14. The correction optical system (L1 to L4) includes a correction lens L1, a toric lens [2, a toric lens L3, and a correction lens L4. These have the same structure and functions as those of the projection optical system PL 1 shown in FIG. 2. The correction optical system (L5 to L8) includes a correction lens L5, a toric lens L6, a toric lens L7, and a correction lens L8. These have the same structures and functions as those of the projection optical system P L 1 shown in FIG. 2. Therefore, the correction lens L 1 and the toric lens L2 are paired, and the toric lens L3 and the correction lens L4 are paired, so that at least one of these pair of people rotates around the first optical axis AX, or Move in the direction of cutting the first optical axis AX 1 without causing deterioration of imaging performance due to the influence of birefringence, which can be minimized. -37- This paper size applies the Chinese National Standard (CNS) Α4 specification (210X297 mm) 554412

Correction of rotational asymmetric off-axis aberration components (such as astigmatic aberrations) of the shadow optical system PLi increases correction of rotational asymmetric magnification error. In addition, the correction lens L5 and the toric lens L6 are paired, and the toric lens L7 and the correction lens L8 are paired, so that at least one of the pair of rotations rotates around the first optical axis AX1, or crosses the first Moving in the direction of one optical axis Αχι does not deteriorate the imaging performance due to the influence of birefringence. It can minimize the correction of the rotational asymmetric magnification error of the projection optical system PL1, and increase the rotational asymmetric off-axis aberration components ( Such as astigmatism). Therefore, even if the reflective-refractive projection optical system with the structure shown in FIG. 8 uses an optical material having fluorite's birefringence, it can still be substantially free from the influence of birefringence, has good imaging performance, and can adjust the projection separately. Projection optical system of rotational asymmetric magnification error and rotational asymmetric off-axis aberration components of the optical system pL 丨. The embodiments of the present invention have been described above, but the present invention is not limited to the above-mentioned embodiments, and can be freely changed within the scope of the present invention. As described above, the exposure device of the step and scan method is used as an example, but it can also be applied to the exposure device of the step and repeat method. In addition, the light source of the foregoing embodiment uses a fluorine laser light source, but the present invention is not limited thereto. It is also possible to use a laser light source with a wavelength of 146 nm and an argon laser light source with a wavelength of 26 nm. Vacuum UV light source. Furthermore, single-wavelength laser light of the DFB semiconductor laser of the light source or the infrared region or visible region from the fiber laser can be amplified by a fiber sharpener doped with europium (or both thorium and yttrium) , Using non-linear optical crystallization, using high harmonics of wavelength conversion on ultraviolet light. For example, the oscillation wavelength of a single-wavelength laser -38- This paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 554412 A7 ____ B7 V. Description of the invention (36) When it is within the range of 1.51 to 1.59 μπι The output has 8 times higher harmonics in the range of 189 ~ 199 nm, or 10 times higher harmonics in the range of 15 1 ~ 159 nm. In particular, when the exhaustion wavelength is in the range of 1544 ~ 1.553 μπι, it can obtain 8 times higher harmonics with a wavelength of 193 ~ 194 nm, that is, ultraviolet light with the same wavelength as that of argon fluoride excimer laser light. When the oscillating wavelength is in the range of 157 ~ 丨 58 μΠ1, it is possible to obtain ultraviolet light with a wavelength of 10 times the south harmonic in the range of 157 ~ 158 nm, that is, the ultraviolet light having the same wavelength as that of the fluorine laser light. In addition, when the oscillation wavelength is in the range of 1.03 ~ L1 2 μm, the output has 7 times higher harmonics in the range of 147 ~ 160! ^ 〇1, especially the oscillation wavelength is 1099 ~ 1.1 When it is in the range of 6 μηι, it can obtain 7 times higher harmonics with wavelengths ranging from 57 to 158, that is, ultraviolet light with a wavelength approximately the same as that of fluorine laser light. In this case, a single-wavelength laser can be used, for example, a yttrium-doped fiber laser. In addition, as described in the above embodiment, the optical system of the present invention can be applied to other optical systems in addition to being disposed in a projection optical system. If it is also applicable to observe at least one of the optical image of the alignment mark formed on the reticle R and the optical image of the wafer alignment mark formed on the wafer W through the projection optical system, measure the reticle R Alignment sensor relative to wafer w. In addition, the projection optical system pL shown in FIG. 2 is a pair of toric lenses (such as toric lens L2) and a correction lens (such as correction lens Li), but it is also possible to use a -toric lens and several lenses The correction lenses are paired, and several toric lenses can be paired with several correction lenses. However, one or more acoustic curved lenses and several correction lenses must use the aforementioned __Fourth method-39- This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) 554412 A7 B7 The relative positional relationship of each crystal axis is set. In addition, the so-called first optical member (such as the toric lens L2) and the second optical member (such as the correction lens L1) in the present invention do not necessarily need to be physically disposed at a position close to the optical axis, and may be disposed apart, or even Other optical members may be disposed between the first optical member and the second optical member. However, the condition is that the relative positions of the respective crystal axes between the first optical member and the first optical member must be set to any of the relationships described in the first to fourth methods. In addition, in addition to the exposure device used in the manufacture of semiconductor elements, the present invention can also be applied to an exposure device used in the manufacture of a display including a liquid crystal display element (LCD) and the like to transfer a device pattern to a glass substrate; It is used in the manufacture of thin-film magnetic heads, exposure equipment that transfers device patterns onto ceramic wafers, and exposure equipment used in the manufacture of imaging elements such as CCDs. In addition, in order to manufacture marking lines or masks used in light exposure devices, EUV exposure devices, x-ray exposure devices, and electronic wire exposure devices, the exposure devices that transfer circuit patterns on glass substrates or silicon wafers are used. The invention can also be used. Here, an exposure device using Duv (extreme ultraviolet) light, VLJV (vacuum ultraviolet) light, or the like generally uses a transmissive graticule, and the graticule substrate uses quartz glass, fluorine-doped quartz glass, fluorite, magnesium fluoride Or crystal. In addition, transmission type masks (stencil masks, thin masks) are used for the X-ray exposure apparatus or electron beam exposure apparatus of the proximity method, and silicon wafers are used for the mask substrate. Next, an embodiment of a method for manufacturing a micro-device using the exposure method and exposure method according to one embodiment of the present invention in a photolithography step will be described. Fig. 9 is a flowchart showing the manufacture of a micro device (semiconductor wafers such as 1C and LS1, liquid crystal panels, Ccd, thin-film magnetic heads, micro-machines, etc.). As shown in Fig. 9, the first -40- Kojima Standard 财 ® Standard (CNS); specifications _χ297 public love);-554412 A7 B7 V. Description of the invention (38 first t step S 1 0 (design step) , Set the function and performance of the $ Ca Chongzheng government set (such as the circuit design of the semi-capacity device, etc.), and do not design the pattern design to implement its function. Continue, at step s 1 1 ( In this step, the mask (in this step) is used to produce a mask (marking line) that forms the design stroke pattern. In addition, in step S12 (wafer manufacturing step), a crystal is manufactured using a material such as silicon. Its-person 'in step SIj (wafer processing step milk, Shiyi Wang Zhizhi), using the mask and wafer completed in steps S10 ~ step s12, and later using the photolithography technology, etc. An actual circuit, etc. is formed on the wafer. Straight down, 'In step s 14 (device assembly step), the wafer processed in step S 13 is used to push and hold the wafer. Step SI4 includes steps such as a cutting step, a bonding step, and a packaging step (chip packaging) as needed. Finally, in step S15 (inspection step), inspections such as an operation confirmation test and a durability test of the microdevice made in the step are performed. After this step, the microdevice is completed and shipped. FIG. H) is a detailed flowchart showing step (i) of FIG. 9 of the semiconductor device. The wafer surface is oxidized in step S21 (oxidation step) in FIG. In step S22 (CVD step), an insulating film is formed on the surface of the wafer. In step (electrode formation step), an electrode is formed on the wafer by evaporation. In step S24 (ion implantation step), ions are implanted in the wafer. Each of the above steps S2 to S24 constitutes a pre-processing step of each stage of the wafer processing, and each stage is selectively executed according to the required processing. At each stage of the wafer process, when the above pre-processing steps are completed, the following post-processing steps are performed. In this post-processing step, first, at step 25 (photoresist formation step) t, a photosensitive agent is applied on the wafer. Continue in step% (exposure step), using the lithography system (exposure device) and exposure method described above to mask the

The private road pattern is transferred to the wafer. Next, in step 27 (imaging step), the exposed wafer is developed, and in step 28 (etching step), the exposed members other than the photoresist remaining portion are removed by etching. Continue in step 29 (photoresist removal step) to remove the photoresist and complete the unnecessary photoresist. By repeating these pre-processing steps and post-processing steps, circuit patterns are formed multiple times on the wafer. Using the microdevice manufacturing method described above in the conventional embodiment, the above-mentioned exposure step (step S26) is used without the above-mentioned deterioration in imaging performance due to the influence of birefringence, and the aberration is suppressed to an extremely small exposure device, which can faithfully The pattern formed on the reticle R is transferred to the wafer w, and for this reason, a high-integration device having a minimum line width of about 0.1 can be produced with good yield. [Effects of the invention] As explained above, the present invention has asymmetric optical characteristics. Even if the member is arranged in the optical system, the second optical member is placed on the axis of the axis and the crystal axis of the first optical member. The effect of birefringence, which can cause the deterioration of imaging performance and symmetrical optical characteristics. In addition, even if the present invention moves the first in the direction transverse to the optical axis, the axis moves in the direction of the axis in a state of a specific positional relationship of the axis. The first optical system matches the first optical component with a crystal with a specific positional relationship. An optical component is paired with a wavelength below 200 ηπ minus t °, so it has a non-optical component that corrects the optical axis of the optical system due to birefringence. Rotate around the optical axis, or α the first optical member rotates around the optical axis to keep the crystal, or the influence of the light beam in the cross-cut does not correspond to the first optical element -42-

554412 5. Description of the invention (40) In the case of the surrounding rotation angle or the amount of movement in the direction transverse to the optical axis. There is an effect that the optical characteristics of the optical system can be adjusted by rotating asymmetric optical characteristics without deteriorating imaging performance due to the influence of birefringence. '' The present invention can minimize the rotational non-axis 3 aberration components (such as astigmatic aberration) of the optical system by arranging the first optical member and the second optical member on the incident end side of the optical system. Correction, and increase the correction of the rate of rotation non- ^ 彳 "quote." By using the first optical member and the second optical member disposed on or near the pupil surface, the rotation of the optical system can be minimized. The correction of the magnification error, and the correction of the rotational asymmetric off-axis aberration into a knife (such as astigmatic aberration) is added. gj has the effect of individually correcting or adjusting the optical characteristics of the rotation asymmetric of the optical axis of the optical system according to the type. [Brief description of the drawings] Fig. 1 is a schematic side view showing the entire structure of an exposure apparatus according to an embodiment of the present invention. Fig. 2 is a sectional view of a lens showing the structure of a projection optical system according to an embodiment of the present invention. FIG. 3 is an explanatory diagram of a crystal axis orientation of fluorite. Fig. 4 is a diagram showing a pattern of light beams incident on a fluorite lens provided in the projection optical system PL at various incident angles. 5 (a) to 5 (f) are explanatory diagrams of a first method for reducing the influence of birefringence. 6 (a) to 6 (f) are explanatory diagrams of a second method for reducing the influence of birefringence. 7 (a) to 7 (f) are explanatory diagrams of a third method for reducing the influence of birefringence. Fig. 8 shows the outline structure of a projection optical system according to another embodiment of the present invention. -43- This paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X 297 mm) 554412 A7 B7 V. Front view of the description of the invention (41) . FIG. 9 is a flowchart showing a manufacturing step of a microdevice. FIG. 10 is a detailed flowchart showing step S 1 3 of FIG. 9 of the semiconductor device. Explanation of component symbols AX optical axis IOS illumination optical system L1 correction lens (second optical component) L2 toric lens (first optical component) L3 toric lens (first optical component, third optical component) L4 correction lens (second Two optical components, fourth optical component) L5 correction lens (second optical component) L6 toric lens (first optical component) L7 toric lens (first optical component, third optical component) L8 correction lens (second optical Component, fourth optical component) PL projection optical system PL1 projection optical system R reticle (mask) HST reticle stage (mask stage) W wafer (photosensitive substrate) WST wafer stage (substrate stage) -44- This paper size applies to China National Standard (CNS) A4 (210 X 297 mm)

Claims (1)

554412 A8 B8 An optical system is characterized in that it includes: a first photon member formed by a crystalline optical chirp that transmits light having a wavelength below 200 nm, and the optical system is arranged along the optical axis. There are several optical chirped axes with rotational asymmetric energy; and 2.4.6. To one first optical member, which is shaped by a crystalline optical material that transmits a wavelength on a beam of 2000 nm. And the crystal car by configuration # has a specific positional relationship with the crystal axis of the aforementioned -optical member. [mu]: An optical system dedicated to the m-th item, wherein the first optical component and the second optical component just formed constitute a state τ 'that maintains a specific parametric relationship of the crystal axis, and can be rotated around the optical axis. : Application: The optical system of item 2 of the patent, in which the aforementioned first optical element < and the second optical member just mentioned constitute a state in which a specific detection relationship of the aforementioned crystal axis is maintained, and the Move in the direction. : Shen: Special: The optical system of item 3, wherein the first optical loss and the second crystalline optical material of the second optical member are fluorene or barium gas. : The optical system of the second scope of the patent application, wherein the aforementioned first optical structure and the "two optical components of the crystalline optical material are" Mom or barium gas. " : Shen: The optical system of the first item of the range, which makes the aforementioned first optical structure = ^ d academic structure can be moved in a direction transverse to the aforementioned optical axis while maintaining a specific positional relationship of the aforementioned crystal axis. . The taxi η is struck by the taxi master U々 > r m from / ▼ _L · ^ If the optical system of the patent application item 6 is used, the aforementioned -45 · Binding 554412 A8 B8 1,000 and the crystal barium of the second optical member just described. For example, the optical system of the scope of application for item i, wherein the aforementioned first light element and the aforementioned: crystalline optical material of the optical component are gas or barium. 9. The optical system according to any one of items i to 8 of the patent application range, wherein the first optical member and the second optical member are disposed on the incident end side of the optical system. The optical system according to any one of item (1) of the patent application scope, wherein the first optical component and the second optical component are disposed on or near the pupil surface of the optical system. 11. The optical system according to any one of claims 1 to 8 in the scope of patent application, wherein the first optical component includes a toric optical component, which is in a plane orthogonal to the optical axis of the optical system, and The energy in two orthogonal directions is different. 12. For the optical system according to any one of items 1 to 8 of the scope of patent application, wherein the angle of the light beam entering the first optical member and the light beam passing through the first optical member and the optical axis of the illumination system is set Below 20 degrees. 13. The optical system according to any one of claims 1 to 8, wherein the aforementioned first optical member and the aforementioned second optical member are configured to have or have a crystal axis [100] therewith. The optically equivalent crystal axis is substantially the same as the optical axis of the aforementioned optical system, and the positional relationship with respect to the optical axis as a center is only approximately 45 degrees relative to each other. -46-This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) Binding ABCD 554412 (1) Application scope of patents-14. The optical system of any one of items 1 to 8 of the scope of application for patents, wherein the aforementioned first optical component and the aforementioned second well-study system are configured as follows: The crystal axis [111] or a crystal axis optically equivalent to the crystal axis [111] is substantially the same as the optical axis of the optical system, and has a positional relationship of approximately 60 degrees relative to the optical axis. 15. The optical system according to any one of claims 1 to 8, wherein the aforementioned -optical member and the aforementioned = optical member are set to have or have a crystal axis [110] therewith. The optically equivalent crystal axis is substantially the same as the optical axis of the aforementioned optical system, and has a positional relationship of being rotated approximately 90 degrees relative to the optical axis as a center. 16. An optical system characterized in that a plurality of optical members are arranged along the optical axis and include: a light-dried member made of a crystalline optical material that substantially transmits light having a wavelength below 200 nm, And the optical axis of the optical system has rotational asymmetric energy; at least one second optical member is formed of a crystalline optical material that substantially transmits light having a wavelength of less than 200 nm, and the crystal axis is configured to be in line with the foregoing The crystal axis of the first optical member has a specific positional relationship; the third optical member is formed of a crystalline optical material that substantially transmits light having a wavelength below 200 nm, and has a rotation non-rotation to the optical axis of the aforementioned optical system Symmetry energy; and at least one fourth optical member, which is formed of a crystalline optical material that transmits light having a wavelength below 200 nm, and the crystal axis is configured to have a specific position with the crystal axis of the third optical member relationship. -47- This paper size is in accordance with Chinese National Standard (CNS) A4 specification (21 × 297 mm) 554412 A8 B8 C8 D8 Patent application scope 17. For the optical system of the 16th patent application scope, in which the aforementioned first optical component And the second optical member, and at least one of the third optical member and the fourth optical member is configured to be able to rotate around the optical axis while maintaining the known and 疋 positional relationship of the crystal axis. _. 18. The optical system according to item 17 of the scope of patent application, wherein at least one of the aforementioned first " optical member and the aforementioned second optical member, and the aforementioned third optical member and front = fourth optical member are configured to While maintaining the known positional relationship of the crystal axis, it can be moved in a direction transverse to the optical axis. 19. The optical system according to item 8 of the patent application range, wherein the crystalline optical material of the aforementioned first optical member to the aforementioned fourth optical member is fluorinated office or barium fluoride. 20. The optical system according to item 17 of the scope of patent application, wherein the crystalline optical material of the aforementioned first optical member to the aforementioned fourth optical member is a fluorinated office or a barium oxide. 21. The optical system according to item 6 of the patent application, wherein at least one of the first optical component and the second optical component, and the fourth optical component and the front = fourth optical component are configured to hold In the state of the specific positional relationship of the aforementioned crystal axis, it can be moved in a direction transverse to the aforementioned optical axis. 22. The optical system according to item 21 of the scope of the Chong Li Lee, wherein the crystalline optical material Mb of the aforementioned first optical member to the aforementioned fourth optical member. 23. For example, please refer to the optical system in the 16th scope of the patent. The above-mentioned No.-Optics -48- t almost g m 中 明 通 t Tolerance (ΓΗη) λ 1 w 簠) 1 — ABCD 554412 VI. Patent application park :::: The crystalline optical material to the aforementioned fourth optical member is vaporized or fluorine. 24. For the optical system according to any of the claims 16 to 23, the aforementioned -optical Component to the incident end side of the aforementioned fourth optical component academic system. 25. If the optical system of any one of items 16 to 23 of the scope of application for a patent, the aforementioned optical component to the aforementioned academic component are arranged on or near the pupil surface of the aforementioned academic system. 26. The optical system according to any one of claims 16 to 23 of the scope of patent application, wherein the first optical component and the third optical component include a toric optical component, which is orthogonal to the optical axis of the optical system In the plane of, the energy in two directions orthogonal to each other are different. 27. The optical system according to any one of claims 16 to 23, wherein the light beam incident on the first optical member and the third optical member and the light beam passing through the first optical member and the third optical member The angle formed with the optical axis of the aforementioned lighting system is set below 20 degrees. 28. The optical system according to any one of claims 16 to 23, wherein the first optical component and the second optical component are configured to have or have a crystal axis [1 0 0] 1 00] The optically equivalent crystal axis is approximately the same as the optical axis of the optical system, and has a positional relationship of approximately 45 degrees relative to the optical axis. 2 9. The optical system according to item 28 of the scope of patent application, wherein the third optical member and the fourth optical member are configured to have a crystal axis [100] or be optically equivalent to the crystal axis [100]. Crystal axis, with the aforementioned optical system -49- This paper size applies to China National Standard (CNS) A4 (210X 297 mm) Binding # 554412 6. The optical axis of the patent application Fanyuan is approximately the same, and the position relationship of the optical axis is about 45 degrees relative to the optical axis. 30. The optical system according to item 28 of the scope of patent application, wherein the third optical member and the fourth optical member are configured to have a crystal axis [111] or be optically equivalent to the crystal axis [1 1 1] The crystal axis is approximately the same as the optical axis of the optical system, and has a positional relationship of approximately 60 degrees relative to the optical axis as a center. 3 1. The optical system according to item 28 of the scope of patent application, wherein the aforementioned third optical member and the aforementioned fourth optical member are configured to have their crystal axes [1 10] or be optically equivalent to the crystal axes [1 1 0] The crystal axis is approximately the same as the optical axis of the optical system, and the positional relationship of the optical axis is approximately 90 degrees relative to the optical axis. 3 2. The optical system according to any one of claims 16 to 23, wherein the first optical member and the second optical member are configured to have or have a crystal axis [1 11] 11] The optically equivalent crystal axis is approximately the same as the optical axis of the & optical system, and has a positional relationship of approximately 60 degrees relative to the optical axis as a center. μ · The optical system according to item 32 of the patent application range, wherein the third optical member and the fourth optical member are configured to have a crystal axis [100] or be optically equivalent to the crystal axis [100]. The crystal axis of the optical system is substantially the same as the optical axis of the optical system, and the positional relationship is about 45 degrees relative to the optical axis. 34. The optical system according to item 32 of the scope of patent application, wherein the third optical member and the fourth optical member are configured to have a crystal axis [丨 η] or -50. This paper standard is applicable to the Chinese National Standard (CNS ) Α4 size (210X 297mm) Binding 6. Scope of patent application The crystal axis that is optically equivalent to the crystal axis [111] is approximately the same as the optical axis of the aforementioned optical system, and the positional relationship with the optical axis as the center is only relatively 60 degrees relative to each other. 35. The optical system according to item 32 of the scope of patent application, wherein the third optical member and the fourth optical member are configured to have a crystal axis [Π0] or a crystal optically equivalent to the crystal axis [1 10]. The axis is substantially the same as the optical axis of the optical system, and the positional relationship is approximately 90 degrees relative to the optical axis. 3 6. The optical system according to any one of claims 16 to 23, wherein the first optical member and the second optical member are configured to have or have a crystal axis [1 11] 〇] The optically equivalent crystal axis is approximately the same as the optical axis of the optical system, and is in a positional relationship that is rotated approximately 90 degrees relative to the optical axis. 37. The optical system according to claim 36, wherein the third optical member and the fourth optical member are configured to have a crystal axis [丨 〇〇] or have optical properties with the crystal axis [100] The effect of the crystal axis is substantially the same as the optical axis of the optical system, and the positional relationship is about 45 degrees relative to the optical axis. 3 8. The optical system according to item 36 of the scope of patent application, wherein the third optical component and the fourth optical component are configured to have a crystal axis [丨 n] or optical properties with the crystal axis [1 1 1], etc. The effect of the crystal axis is substantially the same as the optical axis of the optical system, and the positional relationship is about 60 degrees relative to the optical axis. For example, the optical system in the 36th scope of the patent application, in which the aforementioned third optical -51-this paper size is suitable for SS home standard (CNS) μ specifications (21GX 297 public dream) 554412 The component and the aforementioned fourth optical component are arranged such that x has its crystal axis [110] or, ό 结晶 crystal axis [1 10] optically equivalent ^. The sun-axis of the sun-axis and the Koshu optical system The position relationship is substantially the same, and the positional relationship with the aforementioned optical station plate occupying the champion glaze is only relatively rotated by 90 degrees. 40 41. A projection optical system, characterized in that: an optical system that projects a pattern image formed on a first surface onto a second surface, and is provided with any one of the twenty-ninth aspect of the patent application. An exposure device comprising: an illumination optical system that illuminates a mask with light from a light source; and a projection optical system that projects and exposes a pattern image of the mask on a photosensitive substrate; and Comprising: a mask stage for setting the aforementioned mask on which the specific pattern is formed on the first surface; and a substrate stage for setting the photosensitive substrate on the second surface; In the optical path between the light source and the second surface, an optical system according to any one of claims 1 to 39 is arranged. 42. The exposure device according to item 41 of the patent application, wherein the aforementioned projection optical system includes an optical system according to any of items 1 to 39 of the patent application. 43. A method for manufacturing a micro device, comprising: an exposure step, which uses an exposure device of the 41st or 42th image of the patent application to 'expose the pattern of the aforementioned mask on the aforementioned photosensitive substrate; and Step 'is to develop the aforementioned photosensitive substrate exposed by the aforementioned exposure step. • 52- The paper size is in accordance with the Chinese National Standard (CNS) A4 (210X297 mm)