KR20170116246A - 반도체 장치 및 그 제조 방법 - Google Patents

반도체 장치 및 그 제조 방법 Download PDF

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Publication number
KR20170116246A
KR20170116246A KR1020177027950A KR20177027950A KR20170116246A KR 20170116246 A KR20170116246 A KR 20170116246A KR 1020177027950 A KR1020177027950 A KR 1020177027950A KR 20177027950 A KR20177027950 A KR 20177027950A KR 20170116246 A KR20170116246 A KR 20170116246A
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South Korea
Prior art keywords
layer
oxide semiconductor
thin film
transistor
semiconductor layer
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KR1020177027950A
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Korean (ko)
Inventor
？뻬이 야마자끼
šœ뻬이 야마자끼
마사시 쯔부꾸
히로미찌 고도
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가부시키가이샤 한도오따이 에네루기 켄큐쇼
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Publication of KR20170116246A publication Critical patent/KR20170116246A/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H01L29/7869—
    • H01L29/66742—
    • H01L29/78606—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

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  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
  • Electrochromic Elements, Electrophoresis, Or Variable Reflection Or Absorption Elements (AREA)
  • Shift Register Type Memory (AREA)
KR1020177027950A 2009-09-16 2010-09-03 반도체 장치 및 그 제조 방법 Ceased KR20170116246A (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JPJP-P-2009-215077 2009-09-16
JP2009215077 2009-09-16
JP2010035349 2010-02-19
JPJP-P-2010-035349 2010-02-19
PCT/JP2010/065568 WO2011033993A1 (en) 2009-09-16 2010-09-03 Semiconductor device and method for manufacturing the same

Related Parent Applications (1)

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KR1020127009518A Division KR101785745B1 (ko) 2009-09-16 2010-09-03 반도체 장치 및 그 제조 방법

Related Child Applications (1)

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KR1020187032119A Division KR102057221B1 (ko) 2009-09-16 2010-09-03 반도체 장치 및 그 제조 방법

Publications (1)

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KR20170116246A true KR20170116246A (ko) 2017-10-18

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KR1020177027950A Ceased KR20170116246A (ko) 2009-09-16 2010-09-03 반도체 장치 및 그 제조 방법
KR1020207026337A Active KR102293198B1 (ko) 2009-09-16 2010-09-03 반도체 장치 및 그 제조 방법
KR1020217026228A Ceased KR20210104938A (ko) 2009-09-16 2010-09-03 반도체 장치 및 그 제조 방법
KR1020127009518A Active KR101785745B1 (ko) 2009-09-16 2010-09-03 반도체 장치 및 그 제조 방법
KR1020187032119A Active KR102057221B1 (ko) 2009-09-16 2010-09-03 반도체 장치 및 그 제조 방법
KR1020197036810A Active KR102157249B1 (ko) 2009-09-16 2010-09-03 반도체 장치 및 그 제조 방법

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KR1020207026337A Active KR102293198B1 (ko) 2009-09-16 2010-09-03 반도체 장치 및 그 제조 방법
KR1020217026228A Ceased KR20210104938A (ko) 2009-09-16 2010-09-03 반도체 장치 및 그 제조 방법
KR1020127009518A Active KR101785745B1 (ko) 2009-09-16 2010-09-03 반도체 장치 및 그 제조 방법
KR1020187032119A Active KR102057221B1 (ko) 2009-09-16 2010-09-03 반도체 장치 및 그 제조 방법
KR1020197036810A Active KR102157249B1 (ko) 2009-09-16 2010-09-03 반도체 장치 및 그 제조 방법

Country Status (6)

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US (4) US20110062435A1 (enExample)
EP (1) EP2478563B1 (enExample)
JP (13) JP5618724B2 (enExample)
KR (6) KR20170116246A (enExample)
CN (4) CN105609565B (enExample)
WO (1) WO2011033993A1 (enExample)

Families Citing this family (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20170116246A (ko) * 2009-09-16 2017-10-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
WO2011043206A1 (en) 2009-10-09 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101803554B1 (ko) * 2009-10-21 2017-11-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 제작방법
KR102142450B1 (ko) * 2009-10-30 2020-08-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작방법
US8947337B2 (en) * 2010-02-11 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Display device
JP5699628B2 (ja) * 2010-07-26 2015-04-15 住友電気工業株式会社 半導体装置
US9397222B2 (en) 2011-05-13 2016-07-19 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
JP6109489B2 (ja) * 2011-05-13 2017-04-05 株式会社半導体エネルギー研究所 Ｅｌ表示装置
US8836555B2 (en) 2012-01-18 2014-09-16 Semiconductor Energy Laboratory Co., Ltd. Circuit, sensor circuit, and semiconductor device using the sensor circuit
JP6088253B2 (ja) * 2012-01-23 2017-03-01 株式会社半導体エネルギー研究所 半導体装置
JP6063757B2 (ja) * 2012-02-03 2017-01-18 株式会社半導体エネルギー研究所 トランジスタ及び半導体装置
KR20130092848A (ko) * 2012-02-13 2013-08-21 삼성전자주식회사 박막 트랜지스터 및 이를 채용한 디스플레이 패널
US20160315196A1 (en) * 2012-04-13 2016-10-27 The Governors Of The University Of Alberta Buried source schottky barrier thin film transistor and method of manufacture
JP6059566B2 (ja) 2012-04-13 2017-01-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP6199583B2 (ja) * 2012-04-27 2017-09-20 株式会社半導体エネルギー研究所 半導体装置
US8995607B2 (en) 2012-05-31 2015-03-31 Semiconductor Energy Laboratory Co., Ltd. Pulse signal output circuit and shift register
WO2014003086A1 (en) * 2012-06-29 2014-01-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6117022B2 (ja) * 2012-07-06 2017-04-19 株式会社半導体エネルギー研究所 半導体装置
US12302698B2 (en) 2012-07-31 2025-05-13 Jdi Design And Development G.K. Display unit with moisture proof film outside of seal section and electronic apparatus with said display unit
JP6142151B2 (ja) 2012-07-31 2017-06-07 株式会社Ｊｏｌｅｄ 表示装置および電子機器
JP6142200B2 (ja) * 2013-09-30 2017-06-07 株式会社Ｊｏｌｅｄ 薄膜半導体装置及びその製造方法
WO2015068319A1 (ja) * 2013-11-06 2015-05-14 株式会社Ｊｏｌｅｄ 薄膜トランジスタ及びその製造方法
JP6330595B2 (ja) * 2014-09-15 2018-05-30 株式会社デンソー 荷重センサ
US9633710B2 (en) 2015-01-23 2017-04-25 Semiconductor Energy Laboratory Co., Ltd. Method for operating semiconductor device
KR102875870B1 (ko) 2015-02-04 2025-10-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 반도체 장치의 제조 방법, 또는 반도체 장치를 포함하는 표시 장치
CN106684125B (zh) * 2015-11-05 2020-05-08 群创光电股份有限公司 显示设备
CN105870201B (zh) * 2016-06-08 2019-01-22 深圳市华星光电技术有限公司 Tft器件结构及其制作方法
US20200052005A1 (en) * 2017-02-23 2020-02-13 Sharp Kabushiki Kaisha Drive circuit, matrix substrate, and display device
KR102597945B1 (ko) * 2017-09-15 2023-11-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
CN109616065A (zh) * 2018-12-29 2019-04-12 武汉华星光电技术有限公司 显示面板的显示方法
CN110767084B (zh) * 2019-02-01 2022-07-08 云谷（固安）科技有限公司 显示面板及其制作方法和显示装置
US11626520B2 (en) * 2019-02-06 2023-04-11 Japan Display Inc. Semiconductor substrate and display device
KR102103986B1 (ko) * 2019-03-14 2020-04-24 삼성전자주식회사 박막 트랜지스터 및 이를 채용한 디스플레이 패널
CN110046611B (zh) * 2019-04-29 2021-05-07 上海天马微电子有限公司 一种显示面板和显示装置
CN110568220B (zh) * 2019-08-27 2021-04-30 华东光电集成器件研究所 一种抗干扰耐过载mems加速度计
US11379231B2 (en) 2019-10-25 2022-07-05 Semiconductor Energy Laboratory Co., Ltd. Data processing system and operation method of data processing system
US20230062482A1 (en) * 2020-02-10 2023-03-02 Arm Limited Systems, Devices, and Methods for Dedicated Low Temperature Design and Operation
US12087397B1 (en) 2020-04-06 2024-09-10 Crossbar, Inc. Dynamic host allocation of physical unclonable feature operation for resistive switching memory
US11823739B2 (en) 2020-04-06 2023-11-21 Crossbar, Inc. Physically unclonable function (PUF) generation involving high side programming of bits
CN115273932A (zh) 2020-04-06 2022-11-01 昕原半导体(上海)有限公司 利用芯片上电阻存储器阵列的不可克隆特性的独特芯片标识符
JP7550542B2 (ja) * 2020-06-09 2024-09-13 武漢天馬微電子有限公司 表示装置
WO2024095862A1 (ja) 2022-10-31 2024-05-10 国立大学法人京都大学 金属有機構造体

Family Cites Families (155)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3711155A1 (de) * 1987-04-02 1988-10-13 Bayer Ag Verfahren zur herstellung von maleinsaeuredimethylester
DE69107101T2 (de) * 1990-02-06 1995-05-24 Semiconductor Energy Lab Verfahren zum Herstellen eines Oxydfilms.
CN1136067A (zh) * 1995-02-22 1996-11-20 智索公司 酯衍生物、液晶组合物和液晶显示元件
DE69635107D1 (de) * 1995-08-03 2005-09-29 Koninkl Philips Electronics Nv Halbleiteranordnung mit einem transparenten schaltungselement
JP3625598B2 (ja) * 1995-12-30 2005-03-02 三星電子株式会社 液晶表示装置の製造方法
CN1153296C (zh) * 1998-05-27 2004-06-09 世界先进积体电路股份有限公司 堆叠栅极存储单元的结构及其制造方法
JP2000150861A (ja) * 1998-11-16 2000-05-30 Tdk Corp 酸化物薄膜
JP3276930B2 (ja) * 1998-11-17 2002-04-22 科学技術振興事業団 トランジスタ及び半導体装置
KR20020038482A (ko) * 2000-11-15 2002-05-23 모리시타 요이찌 박막 트랜지스터 어레이, 그 제조방법 및 그것을 이용한표시패널
JP3997731B2 (ja) * 2001-03-19 2007-10-24 富士ゼロックス株式会社 基材上に結晶性半導体薄膜を形成する方法
JP4761643B2 (ja) * 2001-04-13 2011-08-31 東芝モバイルディスプレイ株式会社 シフトレジスタ、駆動回路、電極基板及び平面表示装置
JP4090716B2 (ja) * 2001-09-10 2008-05-28 雅司 川崎 薄膜トランジスタおよびマトリクス表示装置
US7061014B2 (en) * 2001-11-05 2006-06-13 Japan Science And Technology Agency Natural-superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film
KR100415617B1 (ko) * 2001-12-06 2004-01-24 엘지.필립스 엘시디 주식회사 에천트와 이를 이용한 금속배선 제조방법 및박막트랜지스터의 제조방법
JP4083486B2 (ja) * 2002-02-21 2008-04-30 独立行政法人科学技術振興機構 ＬｎＣｕＯ（Ｓ，Ｓｅ，Ｔｅ）単結晶薄膜の製造方法
US7049190B2 (en) * 2002-03-15 2006-05-23 Sanyo Electric Co., Ltd. Method for forming ZnO film, method for forming ZnO semiconductor layer, method for fabricating semiconductor device, and semiconductor device
JP3933591B2 (ja) * 2002-03-26 2007-06-20 淳二 城戸 有機エレクトロルミネッセント素子
JP2004022625A (ja) * 2002-06-13 2004-01-22 Murata Mfg Co Ltd 半導体デバイス及び該半導体デバイスの製造方法
US7105868B2 (en) * 2002-06-24 2006-09-12 Cermet, Inc. High-electron mobility transistor with zinc oxide
JP2004095671A (ja) * 2002-07-10 2004-03-25 Seiko Epson Corp 薄膜トランジスタ、スイッチング回路、アクティブ素子基板、電気光学装置、電子機器、サーマルヘッド、液滴吐出ヘッド、印刷装置、薄膜トランジスタ駆動発光表示装置
US7067843B2 (en) * 2002-10-11 2006-06-27 E. I. Du Pont De Nemours And Company Transparent oxide semiconductor thin film transistors
JP4460822B2 (ja) * 2002-11-29 2010-05-12 東芝モバイルディスプレイ株式会社 双方向シフトレジスタ、これを用いた駆動回路、平面表示装置
US7262463B2 (en) * 2003-07-25 2007-08-28 Hewlett-Packard Development Company, L.P. Transistor including a deposited channel region having a doped portion
US7282782B2 (en) * 2004-03-12 2007-10-16 Hewlett-Packard Development Company, L.P. Combined binary oxide semiconductor device
US7145174B2 (en) * 2004-03-12 2006-12-05 Hewlett-Packard Development Company, Lp. Semiconductor device
US7297977B2 (en) * 2004-03-12 2007-11-20 Hewlett-Packard Development Company, L.P. Semiconductor device
US20070194379A1 (en) * 2004-03-12 2007-08-23 Japan Science And Technology Agency Amorphous Oxide And Thin Film Transistor
JP4299717B2 (ja) * 2004-04-14 2009-07-22 Ｎｅｃ液晶テクノロジー株式会社 薄膜トランジスタとその製造方法
US7211825B2 (en) * 2004-06-14 2007-05-01 Yi-Chi Shih Indium oxide-based thin film transistors and circuits
KR100971299B1 (ko) * 2004-07-07 2010-07-20 프로메러스, 엘엘씨 감광성 유전체 수지 조성물 및 그 용도
TWI247930B (en) * 2004-08-10 2006-01-21 Ind Tech Res Inst Mask reduction of LTPS-TFT array by use of photo-sensitive low-k dielectrics
JP2006100760A (ja) * 2004-09-02 2006-04-13 Casio Comput Co Ltd 薄膜トランジスタおよびその製造方法
US7285501B2 (en) * 2004-09-17 2007-10-23 Hewlett-Packard Development Company, L.P. Method of forming a solution processed device
JP4543315B2 (ja) * 2004-09-27 2010-09-15 カシオ計算機株式会社 画素駆動回路及び画像表示装置
US7298084B2 (en) * 2004-11-02 2007-11-20 3M Innovative Properties Company Methods and displays utilizing integrated zinc oxide row and column drivers in conjunction with organic light emitting diodes
US7453065B2 (en) * 2004-11-10 2008-11-18 Canon Kabushiki Kaisha Sensor and image pickup device
RU2369940C2 (ru) * 2004-11-10 2009-10-10 Кэнон Кабусики Кайся Аморфный оксид и полевой транзистор с его использованием
US7791072B2 (en) * 2004-11-10 2010-09-07 Canon Kabushiki Kaisha Display
JP5118810B2 (ja) * 2004-11-10 2013-01-16 キヤノン株式会社 電界効果型トランジスタ
JP5118811B2 (ja) * 2004-11-10 2013-01-16 キヤノン株式会社 発光装置及び表示装置
EP1815530B1 (en) * 2004-11-10 2021-02-17 Canon Kabushiki Kaisha Field effect transistor employing an amorphous oxide
US7829444B2 (en) * 2004-11-10 2010-11-09 Canon Kabushiki Kaisha Field effect transistor manufacturing method
US7453156B2 (en) * 2004-11-12 2008-11-18 Chippac, Inc. Wire bond interconnection
US7417254B2 (en) * 2005-01-14 2008-08-26 Au Optronics Corp. Switching device for a pixel electrode and methods for fabricating the same
US7579224B2 (en) * 2005-01-21 2009-08-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a thin film semiconductor device
TWI481024B (zh) * 2005-01-28 2015-04-11 半導體能源研究所股份有限公司 半導體裝置，電子裝置，和半導體裝置的製造方法
TWI505473B (zh) * 2005-01-28 2015-10-21 半導體能源研究所股份有限公司 半導體裝置，電子裝置，和半導體裝置的製造方法
US7858451B2 (en) * 2005-02-03 2010-12-28 Semiconductor Energy Laboratory Co., Ltd. Electronic device, semiconductor device and manufacturing method thereof
US7948171B2 (en) * 2005-02-18 2011-05-24 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US20060197092A1 (en) * 2005-03-03 2006-09-07 Randy Hoffman System and method for forming conductive material on a substrate
US8681077B2 (en) * 2005-03-18 2014-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, and display device, driving method and electronic apparatus thereof
US7544967B2 (en) * 2005-03-28 2009-06-09 Massachusetts Institute Of Technology Low voltage flexible organic/transparent transistor for selective gas sensing, photodetecting and CMOS device applications
US7645478B2 (en) * 2005-03-31 2010-01-12 3M Innovative Properties Company Methods of making displays
US8300031B2 (en) * 2005-04-20 2012-10-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising transistor having gate and drain connected through a current-voltage conversion element
US7402506B2 (en) * 2005-06-16 2008-07-22 Eastman Kodak Company Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
KR100711890B1 (ko) * 2005-07-28 2007-04-25 삼성에스디아이 주식회사 유기 발광표시장치 및 그의 제조방법
JP2007059128A (ja) * 2005-08-23 2007-03-08 Canon Inc 有機ｅｌ表示装置およびその製造方法
JP4870404B2 (ja) * 2005-09-02 2012-02-08 財団法人高知県産業振興センター 薄膜トランジスタの製法
JP4870403B2 (ja) * 2005-09-02 2012-02-08 財団法人高知県産業振興センター 薄膜トランジスタの製法
JP2007073705A (ja) * 2005-09-06 2007-03-22 Canon Inc 酸化物半導体チャネル薄膜トランジスタおよびその製造方法
JP4280736B2 (ja) * 2005-09-06 2009-06-17 キヤノン株式会社 半導体素子
JP4560502B2 (ja) * 2005-09-06 2010-10-13 キヤノン株式会社 電界効果型トランジスタ
JP5116225B2 (ja) * 2005-09-06 2013-01-09 キヤノン株式会社 酸化物半導体デバイスの製造方法
JP5006598B2 (ja) * 2005-09-16 2012-08-22 キヤノン株式会社 電界効果型トランジスタ
JP5078246B2 (ja) 2005-09-29 2012-11-21 株式会社半導体エネルギー研究所 半導体装置、及び半導体装置の作製方法
JP5064747B2 (ja) * 2005-09-29 2012-10-31 株式会社半導体エネルギー研究所 半導体装置、電気泳動表示装置、表示モジュール、電子機器、及び半導体装置の作製方法
EP1770788A3 (en) * 2005-09-29 2011-09-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having oxide semiconductor layer and manufacturing method thereof
JP5037808B2 (ja) * 2005-10-20 2012-10-03 キヤノン株式会社 アモルファス酸化物を用いた電界効果型トランジスタ、及び該トランジスタを用いた表示装置
KR101397571B1 (ko) * 2005-11-15 2014-05-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치 및 그의 제조방법
US7432737B2 (en) * 2005-12-28 2008-10-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device, and electronic device
TWI292281B (en) * 2005-12-29 2008-01-01 Ind Tech Res Inst Pixel structure of active organic light emitting diode and method of fabricating the same
US7867636B2 (en) * 2006-01-11 2011-01-11 Murata Manufacturing Co., Ltd. Transparent conductive film and method for manufacturing the same
JP4977478B2 (ja) * 2006-01-21 2012-07-18 三星電子株式会社 ＺｎＯフィルム及びこれを用いたＴＦＴの製造方法
US7576394B2 (en) * 2006-02-02 2009-08-18 Kochi Industrial Promotion Center Thin film transistor including low resistance conductive thin films and manufacturing method thereof
US7977169B2 (en) * 2006-02-15 2011-07-12 Kochi Industrial Promotion Center Semiconductor device including active layer made of zinc oxide with controlled orientations and manufacturing method thereof
JP5110803B2 (ja) * 2006-03-17 2012-12-26 キヤノン株式会社 酸化物膜をチャネルに用いた電界効果型トランジスタ及びその製造方法
KR100785038B1 (ko) * 2006-04-17 2007-12-12 삼성전자주식회사 비정질 ＺｎＯ계 ＴＦＴ
JP2007311404A (ja) * 2006-05-16 2007-11-29 Fuji Electric Holdings Co Ltd 薄膜トランジスタの製造方法
JP4404881B2 (ja) * 2006-08-09 2010-01-27 日本電気株式会社 薄膜トランジスタアレイ、その製造方法及び液晶表示装置
JP4609797B2 (ja) * 2006-08-09 2011-01-12 Ｎｅｃ液晶テクノロジー株式会社 薄膜デバイス及びその製造方法
JP4999400B2 (ja) * 2006-08-09 2012-08-15 キヤノン株式会社 酸化物半導体膜のドライエッチング方法
JP2008053617A (ja) * 2006-08-28 2008-03-06 Canon Inc 電流モデル作成方法および電子回路
JP4332545B2 (ja) * 2006-09-15 2009-09-16 キヤノン株式会社 電界効果型トランジスタ及びその製造方法
JP5164357B2 (ja) * 2006-09-27 2013-03-21 キヤノン株式会社 半導体装置及び半導体装置の製造方法
JP4274219B2 (ja) * 2006-09-27 2009-06-03 セイコーエプソン株式会社 電子デバイス、有機エレクトロルミネッセンス装置、有機薄膜半導体装置
JP4932415B2 (ja) 2006-09-29 2012-05-16 株式会社半導体エネルギー研究所 半導体装置
US7622371B2 (en) * 2006-10-10 2009-11-24 Hewlett-Packard Development Company, L.P. Fused nanocrystal thin film semiconductor and method
JP2008134625A (ja) * 2006-10-26 2008-06-12 Semiconductor Energy Lab Co Ltd 半導体装置、表示装置及び電子機器
JP5116290B2 (ja) * 2006-11-21 2013-01-09 キヤノン株式会社 薄膜トランジスタの製造方法
US7772021B2 (en) * 2006-11-29 2010-08-10 Samsung Electronics Co., Ltd. Flat panel displays comprising a thin-film transistor having a semiconductive oxide in its channel and methods of fabricating the same for use in flat panel displays
JP2008140684A (ja) * 2006-12-04 2008-06-19 Toppan Printing Co Ltd カラーｅｌディスプレイおよびその製造方法
JP5305630B2 (ja) * 2006-12-05 2013-10-02 キヤノン株式会社 ボトムゲート型薄膜トランジスタの製造方法及び表示装置の製造方法
KR101303578B1 (ko) * 2007-01-05 2013-09-09 삼성전자주식회사 박막 식각 방법
US8207063B2 (en) * 2007-01-26 2012-06-26 Eastman Kodak Company Process for atomic layer deposition
TWI478347B (zh) * 2007-02-09 2015-03-21 Idemitsu Kosan Co A thin film transistor, a thin film transistor substrate, and an image display device, and an image display device, and a semiconductor device
JP5121254B2 (ja) * 2007-02-28 2013-01-16 キヤノン株式会社 薄膜トランジスタおよび表示装置
KR100858088B1 (ko) * 2007-02-28 2008-09-10 삼성전자주식회사 박막 트랜지스터 및 그 제조 방법
KR100851215B1 (ko) * 2007-03-14 2008-08-07 삼성에스디아이 주식회사 박막 트랜지스터 및 이를 이용한 유기 전계 발광표시장치
CN102593161B (zh) * 2007-03-20 2014-11-05 出光兴产株式会社 半导体器件
JP2008276211A (ja) * 2007-04-05 2008-11-13 Fujifilm Corp 有機電界発光表示装置およびパターニング方法
JP2008276212A (ja) * 2007-04-05 2008-11-13 Fujifilm Corp 有機電界発光表示装置
WO2008126879A1 (en) * 2007-04-09 2008-10-23 Canon Kabushiki Kaisha Light-emitting apparatus and production method thereof
JP5197058B2 (ja) * 2007-04-09 2013-05-15 キヤノン株式会社 発光装置とその作製方法
JP2009031742A (ja) * 2007-04-10 2009-02-12 Fujifilm Corp 有機電界発光表示装置
KR100991559B1 (ko) * 2007-04-13 2010-11-04 주식회사 엘지화학 박막트랜지스터 제조방법 및 이에 의해 제조된박막트랜지스터
US7795613B2 (en) * 2007-04-17 2010-09-14 Toppan Printing Co., Ltd. Structure with transistor
KR101325053B1 (ko) * 2007-04-18 2013-11-05 삼성디스플레이 주식회사 박막 트랜지스터 기판 및 이의 제조 방법
KR20080094300A (ko) * 2007-04-19 2008-10-23 삼성전자주식회사 박막 트랜지스터 및 그 제조 방법과 박막 트랜지스터를포함하는 평판 디스플레이
KR101334181B1 (ko) * 2007-04-20 2013-11-28 삼성전자주식회사 선택적으로 결정화된 채널층을 갖는 박막 트랜지스터 및 그제조 방법
JP5408842B2 (ja) * 2007-04-27 2014-02-05 キヤノン株式会社 発光装置およびその製造方法
KR20080099084A (ko) * 2007-05-08 2008-11-12 삼성전자주식회사 박막 트랜지스터 및 그 제조 방법
JP5261979B2 (ja) * 2007-05-16 2013-08-14 凸版印刷株式会社 画像表示装置
KR101334182B1 (ko) * 2007-05-28 2013-11-28 삼성전자주식회사 ＺｎＯ 계 박막 트랜지스터의 제조방법
JP5241143B2 (ja) * 2007-05-30 2013-07-17 キヤノン株式会社 電界効果型トランジスタ
JP5406449B2 (ja) * 2007-05-30 2014-02-05 キヤノン株式会社 酸化物半導体を用いた薄膜トランジスタの製造方法および表示装置
KR101415561B1 (ko) * 2007-06-14 2014-08-07 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 그의 제조 방법
US7897971B2 (en) * 2007-07-26 2011-03-01 Semiconductor Energy Laboratory Co., Ltd. Display device
US8330887B2 (en) * 2007-07-27 2012-12-11 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and electronic device
KR101270172B1 (ko) * 2007-08-29 2013-05-31 삼성전자주식회사 산화물 박막 트랜지스터 및 그 제조 방법
JP5354999B2 (ja) * 2007-09-26 2013-11-27 キヤノン株式会社 電界効果型トランジスタの製造方法
JP4759598B2 (ja) * 2007-09-28 2011-08-31 キヤノン株式会社 薄膜トランジスタ、その製造方法及びそれを用いた表示装置
JP2009092841A (ja) * 2007-10-05 2009-04-30 Sharp Corp 液晶表示装置
US20090090915A1 (en) * 2007-10-05 2009-04-09 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor, display device having thin film transistor, and method for manufacturing the same
JP2009099847A (ja) * 2007-10-18 2009-05-07 Canon Inc 薄膜トランジスタとその製造方法及び表示装置
US7982216B2 (en) * 2007-11-15 2011-07-19 Fujifilm Corporation Thin film field effect transistor with amorphous oxide active layer and display using the same
KR101375831B1 (ko) * 2007-12-03 2014-04-02 삼성전자주식회사 산화물 반도체 박막 트랜지스터를 이용한 디스플레이 장치
JP5377940B2 (ja) * 2007-12-03 2013-12-25 株式会社半導体エネルギー研究所 半導体装置
JP5430846B2 (ja) * 2007-12-03 2014-03-05 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5213421B2 (ja) * 2007-12-04 2013-06-19 キヤノン株式会社 酸化物半導体薄膜トランジスタ
US8384077B2 (en) * 2007-12-13 2013-02-26 Idemitsu Kosan Co., Ltd Field effect transistor using oxide semicondutor and method for manufacturing the same
US8202365B2 (en) * 2007-12-17 2012-06-19 Fujifilm Corporation Process for producing oriented inorganic crystalline film, and semiconductor device using the oriented inorganic crystalline film
KR101516034B1 (ko) * 2007-12-25 2015-05-04 이데미쓰 고산 가부시키가이샤 산화물 반도체 전계효과형 트랜지스터 및 그의 제조 방법
KR20090069806A (ko) * 2007-12-26 2009-07-01 삼성전자주식회사 표시 기판, 이를 포함하는 표시 장치 및 표시 기판의 제조방법
US20100295042A1 (en) * 2008-01-23 2010-11-25 Idemitsu Kosan Co., Ltd. Field-effect transistor, method for manufacturing field-effect transistor, display device using field-effect transistor, and semiconductor device
JP4626659B2 (ja) * 2008-03-13 2011-02-09 ソニー株式会社 表示装置
JP5305730B2 (ja) * 2008-05-12 2013-10-02 キヤノン株式会社 半導体素子の製造方法ならびにその製造装置
KR101496148B1 (ko) * 2008-05-15 2015-02-27 삼성전자주식회사 반도체소자 및 그 제조방법
JP5430248B2 (ja) * 2008-06-24 2014-02-26 富士フイルム株式会社 薄膜電界効果型トランジスタおよび表示装置
US8795554B2 (en) * 2008-06-27 2014-08-05 Idemitsu Kosan Co., Ltd. Sputtering target for oxide semiconductor, comprising InGaO3(ZnO) crystal phase and process for producing the sputtering target
KR100963026B1 (ko) * 2008-06-30 2010-06-10 삼성모바일디스플레이주식회사 박막 트랜지스터, 그의 제조 방법 및 박막 트랜지스터를구비하는 평판 표시 장치
KR100963027B1 (ko) * 2008-06-30 2010-06-10 삼성모바일디스플레이주식회사 박막 트랜지스터, 그의 제조 방법 및 박막 트랜지스터를구비하는 평판 표시 장치
JP5511157B2 (ja) * 2008-07-03 2014-06-04 キヤノン株式会社 発光表示装置
TWI875442B (zh) * 2008-07-31 2025-03-01 日商半導體能源研究所股份有限公司 半導體裝置及半導體裝置的製造方法
KR101539354B1 (ko) * 2008-09-02 2015-07-29 삼성디스플레이 주식회사 액정 표시 장치
KR101542840B1 (ko) * 2008-09-09 2015-08-07 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 이의 제조 방법
JP5339825B2 (ja) * 2008-09-09 2013-11-13 富士フイルム株式会社 薄膜電界効果型トランジスタおよびそれを用いた表示装置
JP5552753B2 (ja) * 2008-10-08 2014-07-16 ソニー株式会社 薄膜トランジスタおよび表示装置
JP4752927B2 (ja) * 2009-02-09 2011-08-17 ソニー株式会社 薄膜トランジスタおよび表示装置
US8450144B2 (en) * 2009-03-26 2013-05-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP5322787B2 (ja) * 2009-06-11 2013-10-23 富士フイルム株式会社 薄膜トランジスタ及びその製造方法、電気光学装置、並びにセンサー
JP5528734B2 (ja) * 2009-07-09 2014-06-25 富士フイルム株式会社 電子素子及びその製造方法、表示装置、並びにセンサー
CN102484135B (zh) * 2009-09-04 2016-01-20 株式会社东芝 薄膜晶体管及其制造方法
US9715845B2 (en) * 2009-09-16 2017-07-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor display device
KR20170116246A (ko) * 2009-09-16 2017-10-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
WO2011043206A1 (en) * 2009-10-09 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device

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