KR20020033579A - 태양광선 제어 피복 유리 - Google Patents
태양광선 제어 피복 유리 Download PDFInfo
- Publication number
- KR20020033579A KR20020033579A KR1020010067198A KR20010067198A KR20020033579A KR 20020033579 A KR20020033579 A KR 20020033579A KR 1020010067198 A KR1020010067198 A KR 1020010067198A KR 20010067198 A KR20010067198 A KR 20010067198A KR 20020033579 A KR20020033579 A KR 20020033579A
- Authority
- KR
- South Korea
- Prior art keywords
- antimony
- layer
- glass
- acid
- dopant
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 239000011521 glass Substances 0.000 title claims abstract description 169
- 239000002019 doping agent Substances 0.000 claims abstract description 155
- 229910052787 antimony Inorganic materials 0.000 claims abstract description 116
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims abstract description 113
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims abstract description 107
- 229910001887 tin oxide Inorganic materials 0.000 claims abstract description 107
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 83
- 239000011737 fluorine Substances 0.000 claims abstract description 81
- 230000005855 radiation Effects 0.000 claims abstract description 37
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 4
- 239000011574 phosphorus Substances 0.000 claims abstract description 4
- 239000002243 precursor Substances 0.000 claims description 96
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 76
- DTQVDTLACAAQTR-UHFFFAOYSA-N Trifluoroacetic acid Chemical compound OC(=O)C(F)(F)F DTQVDTLACAAQTR-UHFFFAOYSA-N 0.000 claims description 66
- 238000000576 coating method Methods 0.000 claims description 55
- 229910006404 SnO 2 Inorganic materials 0.000 claims description 52
- 238000000034 method Methods 0.000 claims description 51
- 239000000203 mixture Substances 0.000 claims description 43
- 239000000758 substrate Substances 0.000 claims description 43
- 239000012159 carrier gas Substances 0.000 claims description 41
- 239000011248 coating agent Substances 0.000 claims description 37
- 238000010521 absorption reaction Methods 0.000 claims description 34
- 229910052718 tin Inorganic materials 0.000 claims description 32
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 31
- 239000000654 additive Substances 0.000 claims description 30
- YMLFYGFCXGNERH-UHFFFAOYSA-K butyltin trichloride Chemical group CCCC[Sn](Cl)(Cl)Cl YMLFYGFCXGNERH-UHFFFAOYSA-K 0.000 claims description 29
- 230000009467 reduction Effects 0.000 claims description 28
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 24
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 24
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 23
- 230000000996 additive effect Effects 0.000 claims description 23
- 230000002829 reductive effect Effects 0.000 claims description 22
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 21
- 239000000047 product Substances 0.000 claims description 20
- QEWYKACRFQMRMB-UHFFFAOYSA-N fluoroacetic acid Chemical compound OC(=O)CF QEWYKACRFQMRMB-UHFFFAOYSA-N 0.000 claims description 16
- DAMJCWMGELCIMI-UHFFFAOYSA-N benzyl n-(2-oxopyrrolidin-3-yl)carbamate Chemical compound C=1C=CC=CC=1COC(=O)NC1CCNC1=O DAMJCWMGELCIMI-UHFFFAOYSA-N 0.000 claims description 15
- WZJUBBHODHNQPW-UHFFFAOYSA-N 2,4,6,8-tetramethyl-1,3,5,7,2$l^{3},4$l^{3},6$l^{3},8$l^{3}-tetraoxatetrasilocane Chemical compound C[Si]1O[Si](C)O[Si](C)O[Si](C)O1 WZJUBBHODHNQPW-UHFFFAOYSA-N 0.000 claims description 12
- FERIUCNNQQJTOY-UHFFFAOYSA-N Butyric acid Chemical compound CCCC(O)=O FERIUCNNQQJTOY-UHFFFAOYSA-N 0.000 claims description 12
- AFVFQIVMOAPDHO-UHFFFAOYSA-N Methanesulfonic acid Chemical compound CS(O)(=O)=O AFVFQIVMOAPDHO-UHFFFAOYSA-N 0.000 claims description 12
- 239000011651 chromium Substances 0.000 claims description 12
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 claims description 12
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 claims description 12
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 11
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 11
- 229910052804 chromium Inorganic materials 0.000 claims description 11
- 239000010941 cobalt Substances 0.000 claims description 11
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 11
- 229910052742 iron Inorganic materials 0.000 claims description 11
- 229910052759 nickel Inorganic materials 0.000 claims description 11
- 239000010955 niobium Substances 0.000 claims description 11
- 229910052760 oxygen Inorganic materials 0.000 claims description 11
- 239000001301 oxygen Substances 0.000 claims description 11
- 229910052721 tungsten Inorganic materials 0.000 claims description 11
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 11
- 239000010937 tungsten Substances 0.000 claims description 11
- 229910052720 vanadium Inorganic materials 0.000 claims description 11
- 230000037303 wrinkles Effects 0.000 claims description 11
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 10
- 229910017052 cobalt Inorganic materials 0.000 claims description 10
- 239000011733 molybdenum Substances 0.000 claims description 10
- 229910052758 niobium Inorganic materials 0.000 claims description 10
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 10
- 229910052750 molybdenum Inorganic materials 0.000 claims description 9
- PBWZKZYHONABLN-UHFFFAOYSA-N difluoroacetic acid Chemical group OC(=O)C(F)F PBWZKZYHONABLN-UHFFFAOYSA-N 0.000 claims description 8
- 239000007789 gas Substances 0.000 claims description 8
- 230000000694 effects Effects 0.000 claims description 7
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 claims description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 6
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 6
- 235000011054 acetic acid Nutrition 0.000 claims description 6
- 235000019253 formic acid Nutrition 0.000 claims description 6
- 229940098779 methanesulfonic acid Drugs 0.000 claims description 6
- 229910017604 nitric acid Inorganic materials 0.000 claims description 6
- 235000019260 propionic acid Nutrition 0.000 claims description 6
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 claims description 6
- IOVCWXUNBOPUCH-UHFFFAOYSA-N Nitrous acid Chemical compound ON=O IOVCWXUNBOPUCH-UHFFFAOYSA-N 0.000 claims description 5
- OCJKUQIPRNZDTK-UHFFFAOYSA-N ethyl 4,4,4-trifluoro-3-oxobutanoate Chemical compound CCOC(=O)CC(=O)C(F)(F)F OCJKUQIPRNZDTK-UHFFFAOYSA-N 0.000 claims description 5
- STSCVKRWJPWALQ-UHFFFAOYSA-N TRIFLUOROACETIC ACID ETHYL ESTER Chemical compound CCOC(=O)C(F)(F)F STSCVKRWJPWALQ-UHFFFAOYSA-N 0.000 claims description 4
- 125000001153 fluoro group Chemical group F* 0.000 claims description 4
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 claims description 3
- ISKQADXMHQSTHK-UHFFFAOYSA-N [4-(aminomethyl)phenyl]methanamine Chemical compound NCC1=CC=C(CN)C=C1 ISKQADXMHQSTHK-UHFFFAOYSA-N 0.000 claims description 2
- PKKGKUDPKRTKLJ-UHFFFAOYSA-L dichloro(dimethyl)stannane Chemical compound C[Sn](C)(Cl)Cl PKKGKUDPKRTKLJ-UHFFFAOYSA-L 0.000 claims description 2
- 230000003647 oxidation Effects 0.000 claims description 2
- 238000007254 oxidation reaction Methods 0.000 claims description 2
- YFRLQYJXUZRYDN-UHFFFAOYSA-K trichloro(methyl)stannane Chemical compound C[Sn](Cl)(Cl)Cl YFRLQYJXUZRYDN-UHFFFAOYSA-K 0.000 claims description 2
- GUNJVIDCYZYFGV-UHFFFAOYSA-K Antimony trifluoride Inorganic materials F[Sb](F)F GUNJVIDCYZYFGV-UHFFFAOYSA-K 0.000 claims 16
- 238000000197 pyrolysis Methods 0.000 claims 10
- 238000000354 decomposition reaction Methods 0.000 claims 7
- ODNBVEIAQAZNNM-UHFFFAOYSA-N 1-(6-chloroimidazo[1,2-b]pyridazin-3-yl)ethanone Chemical compound C1=CC(Cl)=NN2C(C(=O)C)=CN=C21 ODNBVEIAQAZNNM-UHFFFAOYSA-N 0.000 claims 6
- -1 nitrous acid Tin oxide Chemical compound 0.000 claims 6
- JVLRYPRBKSMEBF-UHFFFAOYSA-K diacetyloxystibanyl acetate Chemical compound [Sb+3].CC([O-])=O.CC([O-])=O.CC([O-])=O JVLRYPRBKSMEBF-UHFFFAOYSA-K 0.000 claims 4
- POILWHVDKZOXJZ-ARJAWSKDSA-M (z)-4-oxopent-2-en-2-olate Chemical compound C\C([O-])=C\C(C)=O POILWHVDKZOXJZ-ARJAWSKDSA-M 0.000 claims 3
- 241001424688 Enceliopsis Species 0.000 claims 3
- VMPVEPPRYRXYNP-UHFFFAOYSA-I antimony(5+);pentachloride Chemical compound Cl[Sb](Cl)(Cl)(Cl)Cl VMPVEPPRYRXYNP-UHFFFAOYSA-I 0.000 claims 3
- JGOJQVLHSPGMOC-UHFFFAOYSA-N triethyl stiborite Chemical compound [Sb+3].CC[O-].CC[O-].CC[O-] JGOJQVLHSPGMOC-UHFFFAOYSA-N 0.000 claims 3
- ZQXCQTAELHSNAT-UHFFFAOYSA-N 1-chloro-3-nitro-5-(trifluoromethyl)benzene Chemical compound [O-][N+](=O)C1=CC(Cl)=CC(C(F)(F)F)=C1 ZQXCQTAELHSNAT-UHFFFAOYSA-N 0.000 claims 2
- VBVBHWZYQGJZLR-UHFFFAOYSA-I antimony pentafluoride Chemical compound F[Sb](F)(F)(F)F VBVBHWZYQGJZLR-UHFFFAOYSA-I 0.000 claims 2
- KVBCYCWRDBDGBG-UHFFFAOYSA-N azane;dihydrofluoride Chemical compound [NH4+].F.[F-] KVBCYCWRDBDGBG-UHFFFAOYSA-N 0.000 claims 2
- 238000005979 thermal decomposition reaction Methods 0.000 claims 2
- LIQBKSIZAXKCPA-UHFFFAOYSA-N 4,4,4-trifluoro-3-oxobutanoic acid Chemical compound OC(=O)CC(=O)C(F)(F)F LIQBKSIZAXKCPA-UHFFFAOYSA-N 0.000 claims 1
- 229910021630 Antimony pentafluoride Inorganic materials 0.000 claims 1
- 229910021627 Tin(IV) chloride Inorganic materials 0.000 claims 1
- JJTGQFWJTOMEPI-UHFFFAOYSA-N [P].[O].[Sn] Chemical compound [P].[O].[Sn] JJTGQFWJTOMEPI-UHFFFAOYSA-N 0.000 claims 1
- 150000008064 anhydrides Chemical class 0.000 claims 1
- 239000007857 degradation product Substances 0.000 claims 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims 1
- SYSQUGFVNFXIIT-UHFFFAOYSA-N n-[4-(1,3-benzoxazol-2-yl)phenyl]-4-nitrobenzenesulfonamide Chemical class C1=CC([N+](=O)[O-])=CC=C1S(=O)(=O)NC1=CC=C(C=2OC3=CC=CC=C3N=2)C=C1 SYSQUGFVNFXIIT-UHFFFAOYSA-N 0.000 claims 1
- 125000002743 phosphorus functional group Chemical group 0.000 claims 1
- HPGGPRDJHPYFRM-UHFFFAOYSA-J tin(iv) chloride Chemical compound Cl[Sn](Cl)(Cl)Cl HPGGPRDJHPYFRM-UHFFFAOYSA-J 0.000 claims 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims 1
- 230000007935 neutral effect Effects 0.000 abstract description 35
- 238000004519 manufacturing process Methods 0.000 abstract description 11
- 230000005540 biological transmission Effects 0.000 abstract description 9
- 230000001629 suppression Effects 0.000 abstract description 7
- 238000001429 visible spectrum Methods 0.000 abstract description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 253
- 230000008016 vaporization Effects 0.000 description 14
- 238000009834 vaporization Methods 0.000 description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- 238000005229 chemical vapour deposition Methods 0.000 description 11
- 238000002834 transmittance Methods 0.000 description 11
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 10
- 239000008199 coating composition Substances 0.000 description 9
- 239000003086 colorant Substances 0.000 description 9
- 229910044991 metal oxide Inorganic materials 0.000 description 9
- 150000004706 metal oxides Chemical class 0.000 description 9
- 238000000151 deposition Methods 0.000 description 8
- 239000005361 soda-lime glass Substances 0.000 description 8
- 230000008021 deposition Effects 0.000 description 7
- 238000001228 spectrum Methods 0.000 description 7
- 239000007788 liquid Substances 0.000 description 6
- 230000004048 modification Effects 0.000 description 6
- 238000012986 modification Methods 0.000 description 6
- 239000000377 silicon dioxide Substances 0.000 description 6
- 230000008020 evaporation Effects 0.000 description 5
- 238000001704 evaporation Methods 0.000 description 5
- 238000009472 formulation Methods 0.000 description 5
- 239000007921 spray Substances 0.000 description 5
- 239000006200 vaporizer Substances 0.000 description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 239000012707 chemical precursor Substances 0.000 description 4
- 239000002346 layers by function Substances 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- 239000011247 coating layer Substances 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000010276 construction Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000002441 reversible effect Effects 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 2
- COFWJARDGQSZLX-UHFFFAOYSA-N [F].[Sb] Chemical compound [F].[Sb] COFWJARDGQSZLX-UHFFFAOYSA-N 0.000 description 2
- 239000002250 absorbent Substances 0.000 description 2
- 230000002745 absorbent Effects 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 150000002148 esters Chemical class 0.000 description 2
- 230000007717 exclusion Effects 0.000 description 2
- 239000005329 float glass Substances 0.000 description 2
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 2
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 2
- 239000012705 liquid precursor Substances 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 239000011572 manganese Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000004476 mid-IR spectroscopy Methods 0.000 description 2
- 239000003607 modifier Substances 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 238000007788 roughening Methods 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 238000001878 scanning electron micrograph Methods 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000005118 spray pyrolysis Methods 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 239000003381 stabilizer Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000002478 γ-tocopherol Substances 0.000 description 2
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 1
- NQRLWRODNCDUHY-UHFFFAOYSA-N 6-n,6-n,2-trimethylacridine-3,6-diamine Chemical compound C1=C(C)C(N)=CC2=NC3=CC(N(C)C)=CC=C3C=C21 NQRLWRODNCDUHY-UHFFFAOYSA-N 0.000 description 1
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 238000006124 Pilkington process Methods 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 description 1
- ZDQGUEHIMBQNFU-UHFFFAOYSA-N [dimethyl(silyloxy)silyl]oxy-dimethyl-silyloxysilane Chemical group [SiH3]O[Si](C)(C)O[Si](C)(C)O[SiH3] ZDQGUEHIMBQNFU-UHFFFAOYSA-N 0.000 description 1
- 238000002835 absorbance Methods 0.000 description 1
- 125000005595 acetylacetonate group Chemical group 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 238000004378 air conditioning Methods 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 229910001413 alkali metal ion Inorganic materials 0.000 description 1
- 150000004703 alkoxides Chemical class 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 229910000410 antimony oxide Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 229910000423 chromium oxide Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 229910000428 cobalt oxide Inorganic materials 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000005816 glass manufacturing process Methods 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 239000013529 heat transfer fluid Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000004941 influx Effects 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N iron oxide Inorganic materials [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910000476 molybdenum oxide Inorganic materials 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 229910000484 niobium oxide Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 150000002825 nitriles Chemical class 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- WROMPOXWARCANT-UHFFFAOYSA-N tfa trifluoroacetic acid Chemical compound OC(=O)C(F)(F)F.OC(=O)C(F)(F)F WROMPOXWARCANT-UHFFFAOYSA-N 0.000 description 1
- YUOWTJMRMWQJDA-UHFFFAOYSA-J tin(iv) fluoride Chemical compound [F-].[F-].[F-].[F-].[Sn+4] YUOWTJMRMWQJDA-UHFFFAOYSA-J 0.000 description 1
- 238000013519 translation Methods 0.000 description 1
- 229910001930 tungsten oxide Inorganic materials 0.000 description 1
- 229910001935 vanadium oxide Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
- C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
- C03C17/3657—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer the multilayer coating having optical properties
- C03C17/366—Low-emissivity or solar control coatings
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/22—Surface treatment of glass, not in the form of fibres or filaments, by coating with other inorganic material
- C03C17/23—Oxides
- C03C17/245—Oxides by deposition from the vapour phase
- C03C17/2453—Coating containing SnO2
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/3411—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials
- C03C17/3417—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials all coatings being oxide coatings
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/20—Materials for coating a single layer on glass
- C03C2217/21—Oxides
- C03C2217/211—SnO2
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/20—Materials for coating a single layer on glass
- C03C2217/21—Oxides
- C03C2217/24—Doped oxides
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/20—Materials for coating a single layer on glass
- C03C2217/21—Oxides
- C03C2217/24—Doped oxides
- C03C2217/241—Doped oxides with halides
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/20—Materials for coating a single layer on glass
- C03C2217/21—Oxides
- C03C2217/24—Doped oxides
- C03C2217/244—Doped oxides with Sb
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/90—Other aspects of coatings
- C03C2217/91—Coatings containing at least one layer having a composition gradient through its thickness
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/10—Deposition methods
- C03C2218/15—Deposition methods from the vapour phase
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/10—Deposition methods
- C03C2218/15—Deposition methods from the vapour phase
- C03C2218/152—Deposition methods from the vapour phase by cvd
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/10—Deposition methods
- C03C2218/15—Deposition methods from the vapour phase
- C03C2218/152—Deposition methods from the vapour phase by cvd
- C03C2218/1525—Deposition methods from the vapour phase by cvd by atmospheric CVD
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
- Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
- Y10T428/264—Up to 3 mils
- Y10T428/265—1 mil or less
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31551—Of polyamidoester [polyurethane, polyisocyanate, polycarbamate, etc.]
- Y10T428/31627—Next to aldehyde or ketone condensation product
- Y10T428/3163—Next to acetal of polymerized unsaturated alcohol [e.g., formal butyral, etc.]
Landscapes
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Surface Treatment Of Glass (AREA)
- Glass Compositions (AREA)
- Treatments For Attaching Organic Compounds To Fibrous Goods (AREA)
- Chemically Coating (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/699,681 US6596398B1 (en) | 1998-08-21 | 2000-10-30 | Solar control coated glass |
| US09/699,681 | 2000-10-30 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20020033579A true KR20020033579A (ko) | 2002-05-07 |
Family
ID=24810424
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020010067198A Ceased KR20020033579A (ko) | 2000-10-30 | 2001-10-30 | 태양광선 제어 피복 유리 |
Country Status (27)
| Country | Link |
|---|---|
| US (3) | US6596398B1 (enExample) |
| EP (1) | EP1201616A3 (enExample) |
| JP (1) | JP4498648B2 (enExample) |
| KR (1) | KR20020033579A (enExample) |
| CN (1) | CN1350990A (enExample) |
| AR (1) | AR031278A1 (enExample) |
| AU (1) | AU779141B2 (enExample) |
| BR (1) | BR0106856A (enExample) |
| CZ (1) | CZ20013899A3 (enExample) |
| DZ (1) | DZ3130A1 (enExample) |
| EA (1) | EA004211B1 (enExample) |
| EG (1) | EG23121A (enExample) |
| HK (1) | HK1044143A1 (enExample) |
| HU (1) | HUP0104596A3 (enExample) |
| IL (1) | IL146145A (enExample) |
| MX (1) | MXPA01011068A (enExample) |
| MY (1) | MY127102A (enExample) |
| NZ (1) | NZ515014A (enExample) |
| PE (1) | PE20020702A1 (enExample) |
| PL (1) | PL350382A1 (enExample) |
| SA (1) | SA02220665B1 (enExample) |
| SG (1) | SG108284A1 (enExample) |
| SK (1) | SK15592001A3 (enExample) |
| TW (1) | TWI228108B (enExample) |
| UA (1) | UA75574C2 (enExample) |
| UY (1) | UY26994A1 (enExample) |
| ZA (1) | ZA200108848B (enExample) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8270060B2 (en) | 2009-09-25 | 2012-09-18 | Samsung Sdi Co., Ltd. | Infrared ray transmittance controlling panel including color modifying layer |
| US8390915B2 (en) | 2009-11-20 | 2013-03-05 | Samsung Sdi Co., Ltd. | Panel including thermochromic layer and electric conductive layer |
| US10031262B2 (en) | 2015-07-31 | 2018-07-24 | Hyundai Motor Company | Transparent substrate with multilayer anti-glare coating |
Families Citing this family (324)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4272534B2 (ja) * | 2002-01-28 | 2009-06-03 | 日本板硝子株式会社 | 透明導電膜を備えたガラス基板の製造方法、透明導電膜を備えたガラス基板、およびそれを用いた光電変換装置 |
| WO2004112057A1 (ja) * | 2003-06-17 | 2004-12-23 | Nippon Sheet Glass Company, Limited | 透明導電性基板とその製造方法、および光電変換素子 |
| BRPI0411669A (pt) | 2003-07-11 | 2006-08-08 | Pilkington Plc | vidraça para veìculo, vidraça laminada para uso em um veìculo, uso de uma vidraça, vidraça laminada para o teto de um veìculo, e vidraça laminada |
| NL1024437C2 (nl) * | 2003-10-02 | 2005-04-05 | Tno | Coating welke is aangebracht op een substraat, een zonnecel, en werkwijze voor het aanbrengen van de coating op het substraat. |
| US20050196623A1 (en) * | 2004-03-03 | 2005-09-08 | Mckown Clem S.Jr. | Solar control coated glass composition |
| GB0423085D0 (en) | 2004-10-18 | 2004-11-17 | Pilkington Automotive Ltd | Solar control glazing |
| US20060141265A1 (en) * | 2004-12-28 | 2006-06-29 | Russo David A | Solar control coated glass composition with reduced haze |
| GB0505074D0 (en) * | 2005-03-14 | 2005-04-20 | Pilkington Plc | Coatings |
| MX2007013312A (es) * | 2005-04-29 | 2008-03-07 | Agc Flat Glass Europe Sa | Sustrato recubierto y proceso para la produccion de un sustrato recubierto. |
| JPWO2007058118A1 (ja) * | 2005-11-17 | 2009-04-30 | 旭硝子株式会社 | 太陽電池用透明導電性基板およびその製造方法 |
| CN101024742B (zh) * | 2006-02-21 | 2010-05-12 | 中国科学院化学研究所 | 具有光致变色和阳光控制性能的纳米涂料及其制法和用途 |
| US7452488B2 (en) * | 2006-10-31 | 2008-11-18 | H.C. Starck Inc. | Tin oxide-based sputtering target, low resistivity, transparent conductive film, method for producing such film and composition for use therein |
| US20080160321A1 (en) * | 2007-01-03 | 2008-07-03 | 3M Innovative Properties Company | Single pane glazing laminates |
| US7914857B2 (en) * | 2007-01-29 | 2011-03-29 | Guardian Industries Corp. | Method of making heat treated coated article using diamond-like carbon (DLC) coating and protective film with oxygen content of protective film based on bending characteristics of coated article |
| CN101801906A (zh) | 2007-08-16 | 2010-08-11 | 索尔维公司 | 制备4-氟取代的3-氧代-烷酸酯的方法 |
| SG173911A1 (en) * | 2009-03-18 | 2011-09-29 | Agc Flat Glass Na Inc | Thin film coating and method of making the same |
| US20110030290A1 (en) * | 2009-08-07 | 2011-02-10 | Slovak Steven M | Energy efficient fenestration product with suspended particle device |
| US8425978B2 (en) * | 2009-09-21 | 2013-04-23 | Alliance For Sustainable Energy, Llc | Fluorine compounds for doping conductive oxide thin films |
| US8558106B2 (en) * | 2009-10-20 | 2013-10-15 | Industrial Technology Research Institute | Solar cell device and method for fabricating the same |
| US8563853B2 (en) * | 2009-10-20 | 2013-10-22 | Industrial Technology Research Institute | Solar cell device |
| NL2004024C2 (en) * | 2009-12-29 | 2011-06-30 | Omt Solutions Beheer B V | A coated translucent substrate for a greenhouse and a freezer door. |
| US9862640B2 (en) | 2010-01-16 | 2018-01-09 | Cardinal Cg Company | Tin oxide overcoat indium tin oxide coatings, coated glazings, and production methods |
| US10060180B2 (en) | 2010-01-16 | 2018-08-28 | Cardinal Cg Company | Flash-treated indium tin oxide coatings, production methods, and insulating glass unit transparent conductive coating technology |
| JP5722346B2 (ja) * | 2010-01-16 | 2015-05-20 | 日本板硝子株式会社 | 高品質放射制御コーティング、放射制御ガラスおよび製造方法 |
| US11155493B2 (en) | 2010-01-16 | 2021-10-26 | Cardinal Cg Company | Alloy oxide overcoat indium tin oxide coatings, coated glazings, and production methods |
| US10000965B2 (en) | 2010-01-16 | 2018-06-19 | Cardinal Cg Company | Insulating glass unit transparent conductive coating technology |
| US10000411B2 (en) | 2010-01-16 | 2018-06-19 | Cardinal Cg Company | Insulating glass unit transparent conductivity and low emissivity coating technology |
| US8551609B2 (en) | 2010-04-27 | 2013-10-08 | Ppg Industries Ohio, Inc. | Method of depositing niobium doped titania film on a substrate and the coated substrate made thereby |
| CN101898872B (zh) * | 2010-07-21 | 2012-07-04 | 陕西科技大学 | 一种NiO2无机复合有机电致变色薄膜的制备方法 |
| CN101891402B (zh) * | 2010-07-21 | 2012-07-04 | 陕西科技大学 | 一种有机无机电致变色膜的制备方法 |
| CN101891403B (zh) * | 2010-07-21 | 2012-07-04 | 陕西科技大学 | 一种有机无机复合电致变色薄膜的制备方法 |
| DK2654794T3 (da) | 2010-12-22 | 2020-06-08 | Baxalta GmbH | Materialer og fremgangsmåder til konjugering af et vandopløseligt fedtsyrederivat til et protein |
| FR2973366A1 (fr) * | 2011-04-04 | 2012-10-05 | Saint Gobain | Substrat verrier a couche faiblement rugueuse |
| GB201106553D0 (en) * | 2011-04-19 | 2011-06-01 | Pilkington Glass Ltd | Mthod for coating substrates |
| US20130023129A1 (en) | 2011-07-20 | 2013-01-24 | Asm America, Inc. | Pressure transmitter for a semiconductor processing environment |
| US9052456B2 (en) * | 2013-03-12 | 2015-06-09 | Intermolecular, Inc. | Low-E glazing performance by seed structure optimization |
| WO2013105646A1 (ja) * | 2012-01-11 | 2013-07-18 | 三菱マテリアル株式会社 | 赤外線カット材、赤外線カット材の分散液、赤外線カット膜形成用組成物、および赤外線カット膜 |
| CN104081231B (zh) * | 2012-01-11 | 2016-06-01 | 柯尼卡美能达株式会社 | 红外遮蔽膜及具有该红外遮蔽膜的夹层玻璃 |
| CN102603206A (zh) * | 2012-03-21 | 2012-07-25 | 浙江大学 | 一种多层氧化锡掺氟镀膜玻璃及其制备方法 |
| US10714315B2 (en) | 2012-10-12 | 2020-07-14 | Asm Ip Holdings B.V. | Semiconductor reaction chamber showerhead |
| US20140170422A1 (en) * | 2012-12-14 | 2014-06-19 | Intermolecular Inc. | Low emissivity coating with optimal base layer material and layer stack |
| US20160376700A1 (en) | 2013-02-01 | 2016-12-29 | Asm Ip Holding B.V. | System for treatment of deposition reactor |
| DE102013103679A1 (de) * | 2013-04-11 | 2014-10-30 | Heraeus Materials Technology Gmbh & Co. Kg | Licht absorbierende Schicht und die Schicht enthaltendes Schichtsystem, Verfahren zur dessen Herstellung und dafür geeignetes Sputtertarget |
| FR3010074B1 (fr) * | 2013-09-05 | 2019-08-02 | Saint-Gobain Glass France | Procede de fabrication d'un materiau comprenant un substrat muni d'une couche fonctionnelle a base d'oxyde d'etain et d'indium |
| CN103539365B (zh) * | 2013-10-09 | 2016-08-17 | 河源旗滨硅业有限公司 | 一种反射性阳光控制低辐射镀膜玻璃及其制备方法 |
| CN103693862B (zh) * | 2013-12-19 | 2016-03-30 | 海南中航特玻材料有限公司 | 具有防紫外线和红外线双重功能的在线镀膜玻璃及制备方法 |
| CN103864315B (zh) * | 2014-03-12 | 2016-03-02 | 江苏汇景薄膜科技有限公司 | 一种银钛复合功能层低辐射节能玻璃及其制备方法 |
| CN104098276B (zh) * | 2014-07-15 | 2016-08-24 | 江阴沐祥节能装饰工程有限公司 | 一种高平整度的低辐射镀膜玻璃制品及其制备方法 |
| US10858737B2 (en) | 2014-07-28 | 2020-12-08 | Asm Ip Holding B.V. | Showerhead assembly and components thereof |
| US10941490B2 (en) | 2014-10-07 | 2021-03-09 | Asm Ip Holding B.V. | Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same |
| CN104628264A (zh) * | 2015-02-02 | 2015-05-20 | 海南中航特玻科技有限公司 | 在线cvd法阳光控制膜用镀膜液及镀膜玻璃的制备 |
| US10672920B2 (en) * | 2015-03-12 | 2020-06-02 | Vitro Flat Glass Llc | Article with buffer layer |
| US10276355B2 (en) | 2015-03-12 | 2019-04-30 | Asm Ip Holding B.V. | Multi-zone reactor, system including the reactor, and method of using the same |
| CN104944797A (zh) * | 2015-06-24 | 2015-09-30 | 芜湖市晨曦新型建材科技有限公司 | 一种阳光控制低辐射镀膜玻璃及其在线制备方法 |
| US10458018B2 (en) | 2015-06-26 | 2019-10-29 | Asm Ip Holding B.V. | Structures including metal carbide material, devices including the structures, and methods of forming same |
| US10211308B2 (en) | 2015-10-21 | 2019-02-19 | Asm Ip Holding B.V. | NbMC layers |
| US20170114225A1 (en) | 2015-10-27 | 2017-04-27 | Schott Gemtron Corp. | Coating compositions for glass substrates |
| US10591652B2 (en) * | 2015-11-20 | 2020-03-17 | Schott Gemtron Corp. | Multi-layer coated glass substrate |
| US11139308B2 (en) | 2015-12-29 | 2021-10-05 | Asm Ip Holding B.V. | Atomic layer deposition of III-V compounds to form V-NAND devices |
| US10845665B1 (en) | 2016-02-01 | 2020-11-24 | Apple Inc. | Devices with guest-host liquid crystal modulators |
| US10529554B2 (en) | 2016-02-19 | 2020-01-07 | Asm Ip Holding B.V. | Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches |
| US10343920B2 (en) | 2016-03-18 | 2019-07-09 | Asm Ip Holding B.V. | Aligned carbon nanotubes |
| CN106116171B (zh) * | 2016-05-23 | 2019-09-24 | 漳州旗滨玻璃有限公司 | 一种淡蓝色低反射阳光控制镀膜玻璃制备工艺 |
| US11453943B2 (en) | 2016-05-25 | 2022-09-27 | Asm Ip Holding B.V. | Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor |
| WO2017212214A1 (en) * | 2016-06-09 | 2017-12-14 | Pilkington Group Limited | Coated glass article and window for a vehicle including the same |
| CN106116160A (zh) * | 2016-06-20 | 2016-11-16 | 东莞市银建玻璃工程有限公司 | 一种可钢化的离线金色单银low‑e玻璃及其制备方法 |
| US10612137B2 (en) | 2016-07-08 | 2020-04-07 | Asm Ip Holdings B.V. | Organic reactants for atomic layer deposition |
| US9859151B1 (en) | 2016-07-08 | 2018-01-02 | Asm Ip Holding B.V. | Selective film deposition method to form air gaps |
| US9812320B1 (en) | 2016-07-28 | 2017-11-07 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
| US9887082B1 (en) | 2016-07-28 | 2018-02-06 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
| WO2018027034A1 (en) | 2016-08-03 | 2018-02-08 | Schott Gemtron Corp. | Oven having a dielectrically coated glass substrate that absorbs electromagnetic radiation and emits heat radiation |
| US11532757B2 (en) | 2016-10-27 | 2022-12-20 | Asm Ip Holding B.V. | Deposition of charge trapping layers |
| US10714350B2 (en) | 2016-11-01 | 2020-07-14 | ASM IP Holdings, B.V. | Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
| KR102546317B1 (ko) | 2016-11-15 | 2023-06-21 | 에이에스엠 아이피 홀딩 비.브이. | 기체 공급 유닛 및 이를 포함하는 기판 처리 장치 |
| KR102762543B1 (ko) | 2016-12-14 | 2025-02-05 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
| US11581186B2 (en) | 2016-12-15 | 2023-02-14 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus |
| US11447861B2 (en) | 2016-12-15 | 2022-09-20 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus and a method of forming a patterned structure |
| CN106761236A (zh) * | 2016-12-19 | 2017-05-31 | 重庆华瑞玻璃有限公司 | 一种双层遮阳玻璃门窗 |
| US10269558B2 (en) | 2016-12-22 | 2019-04-23 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
| US11390950B2 (en) | 2017-01-10 | 2022-07-19 | Asm Ip Holding B.V. | Reactor system and method to reduce residue buildup during a film deposition process |
| US10468261B2 (en) | 2017-02-15 | 2019-11-05 | Asm Ip Holding B.V. | Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures |
| CN110621630A (zh) * | 2017-04-06 | 2019-12-27 | 皮尔金顿集团有限公司 | 涂覆的玻璃制品 |
| US10770286B2 (en) | 2017-05-08 | 2020-09-08 | Asm Ip Holdings B.V. | Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures |
| US12040200B2 (en) | 2017-06-20 | 2024-07-16 | Asm Ip Holding B.V. | Semiconductor processing apparatus and methods for calibrating a semiconductor processing apparatus |
| US11306395B2 (en) | 2017-06-28 | 2022-04-19 | Asm Ip Holding B.V. | Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus |
| KR20190009245A (ko) | 2017-07-18 | 2019-01-28 | 에이에스엠 아이피 홀딩 비.브이. | 반도체 소자 구조물 형성 방법 및 관련된 반도체 소자 구조물 |
| US11374112B2 (en) | 2017-07-19 | 2022-06-28 | Asm Ip Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
| US10590535B2 (en) | 2017-07-26 | 2020-03-17 | Asm Ip Holdings B.V. | Chemical treatment, deposition and/or infiltration apparatus and method for using the same |
| TWI815813B (zh) | 2017-08-04 | 2023-09-21 | 荷蘭商Asm智慧財產控股公司 | 用於分配反應腔內氣體的噴頭總成 |
| US10692741B2 (en) | 2017-08-08 | 2020-06-23 | Asm Ip Holdings B.V. | Radiation shield |
| US10770336B2 (en) | 2017-08-08 | 2020-09-08 | Asm Ip Holding B.V. | Substrate lift mechanism and reactor including same |
| US11769682B2 (en) | 2017-08-09 | 2023-09-26 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
| US11830730B2 (en) | 2017-08-29 | 2023-11-28 | Asm Ip Holding B.V. | Layer forming method and apparatus |
| US11295980B2 (en) | 2017-08-30 | 2022-04-05 | Asm Ip Holding B.V. | Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures |
| US11747532B2 (en) | 2017-09-15 | 2023-09-05 | Southwall Technologies Inc. | Laminated optical products and methods of making them |
| US10658205B2 (en) | 2017-09-28 | 2020-05-19 | Asm Ip Holdings B.V. | Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber |
| US10403504B2 (en) | 2017-10-05 | 2019-09-03 | Asm Ip Holding B.V. | Method for selectively depositing a metallic film on a substrate |
| US10923344B2 (en) | 2017-10-30 | 2021-02-16 | Asm Ip Holding B.V. | Methods for forming a semiconductor structure and related semiconductor structures |
| CN111344522B (zh) | 2017-11-27 | 2022-04-12 | 阿斯莫Ip控股公司 | 包括洁净迷你环境的装置 |
| US11127617B2 (en) | 2017-11-27 | 2021-09-21 | Asm Ip Holding B.V. | Storage device for storing wafer cassettes for use with a batch furnace |
| US10872771B2 (en) | 2018-01-16 | 2020-12-22 | Asm Ip Holding B. V. | Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures |
| TWI852426B (zh) | 2018-01-19 | 2024-08-11 | 荷蘭商Asm Ip私人控股有限公司 | 沈積方法 |
| KR102695659B1 (ko) | 2018-01-19 | 2024-08-14 | 에이에스엠 아이피 홀딩 비.브이. | 플라즈마 보조 증착에 의해 갭 충진 층을 증착하는 방법 |
| US11081345B2 (en) | 2018-02-06 | 2021-08-03 | Asm Ip Holding B.V. | Method of post-deposition treatment for silicon oxide film |
| EP3737779A1 (en) | 2018-02-14 | 2020-11-18 | ASM IP Holding B.V. | A method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
| US10896820B2 (en) | 2018-02-14 | 2021-01-19 | Asm Ip Holding B.V. | Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
| US10731249B2 (en) | 2018-02-15 | 2020-08-04 | Asm Ip Holding B.V. | Method of forming a transition metal containing film on a substrate by a cyclical deposition process, a method for supplying a transition metal halide compound to a reaction chamber, and related vapor deposition apparatus |
| KR102636427B1 (ko) | 2018-02-20 | 2024-02-13 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 및 장치 |
| US10975470B2 (en) | 2018-02-23 | 2021-04-13 | Asm Ip Holding B.V. | Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment |
| US11473195B2 (en) | 2018-03-01 | 2022-10-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus and a method for processing a substrate |
| US11629406B2 (en) | 2018-03-09 | 2023-04-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate |
| KR102646467B1 (ko) | 2018-03-27 | 2024-03-11 | 에이에스엠 아이피 홀딩 비.브이. | 기판 상에 전극을 형성하는 방법 및 전극을 포함하는 반도체 소자 구조 |
| US11230766B2 (en) | 2018-03-29 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
| US10627555B2 (en) * | 2018-04-09 | 2020-04-21 | Southwall Technologies Inc. | Selective light-blocking optical products having a neutral reflection |
| KR102600229B1 (ko) | 2018-04-09 | 2023-11-10 | 에이에스엠 아이피 홀딩 비.브이. | 기판 지지 장치, 이를 포함하는 기판 처리 장치 및 기판 처리 방법 |
| US10613261B2 (en) * | 2018-04-09 | 2020-04-07 | Southwall Technologies Inc. | Selective light-blocking optical products having a neutral reflection |
| TWI811348B (zh) | 2018-05-08 | 2023-08-11 | 荷蘭商Asm 智慧財產控股公司 | 藉由循環沉積製程於基板上沉積氧化物膜之方法及相關裝置結構 |
| US12025484B2 (en) | 2018-05-08 | 2024-07-02 | Asm Ip Holding B.V. | Thin film forming method |
| US12272527B2 (en) | 2018-05-09 | 2025-04-08 | Asm Ip Holding B.V. | Apparatus for use with hydrogen radicals and method of using same |
| KR102596988B1 (ko) | 2018-05-28 | 2023-10-31 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 및 그에 의해 제조된 장치 |
| US11718913B2 (en) | 2018-06-04 | 2023-08-08 | Asm Ip Holding B.V. | Gas distribution system and reactor system including same |
| TWI840362B (zh) | 2018-06-04 | 2024-05-01 | 荷蘭商Asm Ip私人控股有限公司 | 水氣降低的晶圓處置腔室 |
| US11286562B2 (en) | 2018-06-08 | 2022-03-29 | Asm Ip Holding B.V. | Gas-phase chemical reactor and method of using same |
| US10797133B2 (en) | 2018-06-21 | 2020-10-06 | Asm Ip Holding B.V. | Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures |
| KR102568797B1 (ko) | 2018-06-21 | 2023-08-21 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 시스템 |
| TWI871083B (zh) | 2018-06-27 | 2025-01-21 | 荷蘭商Asm Ip私人控股有限公司 | 用於形成含金屬材料之循環沉積製程 |
| JP7515411B2 (ja) | 2018-06-27 | 2024-07-12 | エーエスエム・アイピー・ホールディング・ベー・フェー | 金属含有材料ならびに金属含有材料を含む膜および構造体を形成するための周期的堆積方法 |
| US10612136B2 (en) | 2018-06-29 | 2020-04-07 | ASM IP Holding, B.V. | Temperature-controlled flange and reactor system including same |
| US10755922B2 (en) | 2018-07-03 | 2020-08-25 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
| US10388513B1 (en) | 2018-07-03 | 2019-08-20 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
| US11430674B2 (en) | 2018-08-22 | 2022-08-30 | Asm Ip Holding B.V. | Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
| KR102707956B1 (ko) | 2018-09-11 | 2024-09-19 | 에이에스엠 아이피 홀딩 비.브이. | 박막 증착 방법 |
| US11024523B2 (en) | 2018-09-11 | 2021-06-01 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
| CN110970344B (zh) | 2018-10-01 | 2024-10-25 | Asmip控股有限公司 | 衬底保持设备、包含所述设备的系统及其使用方法 |
| US11232963B2 (en) | 2018-10-03 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
| KR102592699B1 (ko) | 2018-10-08 | 2023-10-23 | 에이에스엠 아이피 홀딩 비.브이. | 기판 지지 유닛 및 이를 포함하는 박막 증착 장치와 기판 처리 장치 |
| KR102605121B1 (ko) | 2018-10-19 | 2023-11-23 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 및 기판 처리 방법 |
| KR102546322B1 (ko) | 2018-10-19 | 2023-06-21 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 및 기판 처리 방법 |
| US12378665B2 (en) | 2018-10-26 | 2025-08-05 | Asm Ip Holding B.V. | High temperature coatings for a preclean and etch apparatus and related methods |
| US11087997B2 (en) | 2018-10-31 | 2021-08-10 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
| US11028012B2 (en) | 2018-10-31 | 2021-06-08 | Cardinal Cg Company | Low solar heat gain coatings, laminated glass assemblies, and methods of producing same |
| KR102748291B1 (ko) | 2018-11-02 | 2024-12-31 | 에이에스엠 아이피 홀딩 비.브이. | 기판 지지 유닛 및 이를 포함하는 기판 처리 장치 |
| US11572620B2 (en) | 2018-11-06 | 2023-02-07 | Asm Ip Holding B.V. | Methods for selectively depositing an amorphous silicon film on a substrate |
| US10818758B2 (en) | 2018-11-16 | 2020-10-27 | Asm Ip Holding B.V. | Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures |
| US12040199B2 (en) | 2018-11-28 | 2024-07-16 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
| US11217444B2 (en) * | 2018-11-30 | 2022-01-04 | Asm Ip Holding B.V. | Method for forming an ultraviolet radiation responsive metal oxide-containing film |
| KR102636428B1 (ko) | 2018-12-04 | 2024-02-13 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치를 세정하는 방법 |
| US11158513B2 (en) | 2018-12-13 | 2021-10-26 | Asm Ip Holding B.V. | Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures |
| TWI874340B (zh) | 2018-12-14 | 2025-03-01 | 荷蘭商Asm Ip私人控股有限公司 | 形成裝置結構之方法、其所形成之結構及施行其之系統 |
| TWI866480B (zh) | 2019-01-17 | 2024-12-11 | 荷蘭商Asm Ip 私人控股有限公司 | 藉由循環沈積製程於基板上形成含過渡金屬膜之方法 |
| KR102727227B1 (ko) | 2019-01-22 | 2024-11-07 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
| TWI838458B (zh) | 2019-02-20 | 2024-04-11 | 荷蘭商Asm Ip私人控股有限公司 | 用於3d nand應用中之插塞填充沉積之設備及方法 |
| TWI873122B (zh) | 2019-02-20 | 2025-02-21 | 荷蘭商Asm Ip私人控股有限公司 | 填充一基板之一表面內所形成的一凹槽的方法、根據其所形成之半導體結構、及半導體處理設備 |
| KR102626263B1 (ko) | 2019-02-20 | 2024-01-16 | 에이에스엠 아이피 홀딩 비.브이. | 처리 단계를 포함하는 주기적 증착 방법 및 이를 위한 장치 |
| TWI845607B (zh) | 2019-02-20 | 2024-06-21 | 荷蘭商Asm Ip私人控股有限公司 | 用來填充形成於基材表面內之凹部的循環沉積方法及設備 |
| TWI842826B (zh) | 2019-02-22 | 2024-05-21 | 荷蘭商Asm Ip私人控股有限公司 | 基材處理設備及處理基材之方法 |
| KR102858005B1 (ko) | 2019-03-08 | 2025-09-09 | 에이에스엠 아이피 홀딩 비.브이. | 실리콘 질화물 층을 선택적으로 증착하는 방법, 및 선택적으로 증착된 실리콘 질화물 층을 포함하는 구조체 |
| US11742198B2 (en) | 2019-03-08 | 2023-08-29 | Asm Ip Holding B.V. | Structure including SiOCN layer and method of forming same |
| KR20200116033A (ko) | 2019-03-28 | 2020-10-08 | 에이에스엠 아이피 홀딩 비.브이. | 도어 개방기 및 이를 구비한 기판 처리 장치 |
| KR102809999B1 (ko) | 2019-04-01 | 2025-05-19 | 에이에스엠 아이피 홀딩 비.브이. | 반도체 소자를 제조하는 방법 |
| US11447864B2 (en) | 2019-04-19 | 2022-09-20 | Asm Ip Holding B.V. | Layer forming method and apparatus |
| KR20200125453A (ko) | 2019-04-24 | 2020-11-04 | 에이에스엠 아이피 홀딩 비.브이. | 기상 반응기 시스템 및 이를 사용하는 방법 |
| KR20200130121A (ko) | 2019-05-07 | 2020-11-18 | 에이에스엠 아이피 홀딩 비.브이. | 딥 튜브가 있는 화학물질 공급원 용기 |
| KR102869364B1 (ko) | 2019-05-07 | 2025-10-10 | 에이에스엠 아이피 홀딩 비.브이. | 비정질 탄소 중합체 막을 개질하는 방법 |
| KR20200130652A (ko) | 2019-05-10 | 2020-11-19 | 에이에스엠 아이피 홀딩 비.브이. | 표면 상에 재료를 증착하는 방법 및 본 방법에 따라 형성된 구조 |
| JP7612342B2 (ja) | 2019-05-16 | 2025-01-14 | エーエスエム・アイピー・ホールディング・ベー・フェー | ウェハボートハンドリング装置、縦型バッチ炉および方法 |
| JP7598201B2 (ja) | 2019-05-16 | 2024-12-11 | エーエスエム・アイピー・ホールディング・ベー・フェー | ウェハボートハンドリング装置、縦型バッチ炉および方法 |
| USD975665S1 (en) | 2019-05-17 | 2023-01-17 | Asm Ip Holding B.V. | Susceptor shaft |
| USD947913S1 (en) | 2019-05-17 | 2022-04-05 | Asm Ip Holding B.V. | Susceptor shaft |
| KR20200141002A (ko) | 2019-06-06 | 2020-12-17 | 에이에스엠 아이피 홀딩 비.브이. | 배기 가스 분석을 포함한 기상 반응기 시스템을 사용하는 방법 |
| US20220310861A1 (en) * | 2019-06-10 | 2022-09-29 | UbiQD, Inc. | Color-modified luminescent concentrator |
| KR20200141931A (ko) | 2019-06-10 | 2020-12-21 | 에이에스엠 아이피 홀딩 비.브이. | 석영 에피택셜 챔버를 세정하는 방법 |
| KR20200143254A (ko) | 2019-06-11 | 2020-12-23 | 에이에스엠 아이피 홀딩 비.브이. | 개질 가스를 사용하여 전자 구조를 형성하는 방법, 상기 방법을 수행하기 위한 시스템, 및 상기 방법을 사용하여 형성되는 구조 |
| USD944946S1 (en) | 2019-06-14 | 2022-03-01 | Asm Ip Holding B.V. | Shower plate |
| KR20210005515A (ko) | 2019-07-03 | 2021-01-14 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치용 온도 제어 조립체 및 이를 사용하는 방법 |
| JP7499079B2 (ja) | 2019-07-09 | 2024-06-13 | エーエスエム・アイピー・ホールディング・ベー・フェー | 同軸導波管を用いたプラズマ装置、基板処理方法 |
| CN112216646A (zh) | 2019-07-10 | 2021-01-12 | Asm Ip私人控股有限公司 | 基板支撑组件及包括其的基板处理装置 |
| KR102895115B1 (ko) | 2019-07-16 | 2025-12-03 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
| KR20210010816A (ko) | 2019-07-17 | 2021-01-28 | 에이에스엠 아이피 홀딩 비.브이. | 라디칼 보조 점화 플라즈마 시스템 및 방법 |
| KR102860110B1 (ko) | 2019-07-17 | 2025-09-16 | 에이에스엠 아이피 홀딩 비.브이. | 실리콘 게르마늄 구조를 형성하는 방법 |
| US11643724B2 (en) | 2019-07-18 | 2023-05-09 | Asm Ip Holding B.V. | Method of forming structures using a neutral beam |
| CN112242295B (zh) | 2019-07-19 | 2025-12-09 | Asmip私人控股有限公司 | 形成拓扑受控的无定形碳聚合物膜的方法 |
| TWI839544B (zh) | 2019-07-19 | 2024-04-21 | 荷蘭商Asm Ip私人控股有限公司 | 形成形貌受控的非晶碳聚合物膜之方法 |
| CN112309843A (zh) | 2019-07-29 | 2021-02-02 | Asm Ip私人控股有限公司 | 实现高掺杂剂掺入的选择性沉积方法 |
| KR20210015655A (ko) | 2019-07-30 | 2021-02-10 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 및 방법 |
| CN112309899B (zh) | 2019-07-30 | 2025-11-14 | Asmip私人控股有限公司 | 基板处理设备 |
| CN112309900B (zh) | 2019-07-30 | 2025-11-04 | Asmip私人控股有限公司 | 基板处理设备 |
| US11587814B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
| US11587815B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
| US11227782B2 (en) | 2019-07-31 | 2022-01-18 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
| KR20210018759A (ko) | 2019-08-05 | 2021-02-18 | 에이에스엠 아이피 홀딩 비.브이. | 화학물질 공급원 용기를 위한 액체 레벨 센서 |
| KR20210018761A (ko) | 2019-08-09 | 2021-02-18 | 에이에스엠 아이피 홀딩 비.브이. | 냉각 장치를 포함한 히터 어셈블리 및 이를 사용하는 방법 |
| USD965524S1 (en) | 2019-08-19 | 2022-10-04 | Asm Ip Holding B.V. | Susceptor support |
| USD965044S1 (en) | 2019-08-19 | 2022-09-27 | Asm Ip Holding B.V. | Susceptor shaft |
| JP2021031769A (ja) | 2019-08-21 | 2021-03-01 | エーエスエム アイピー ホールディング ビー.ブイ. | 成膜原料混合ガス生成装置及び成膜装置 |
| USD949319S1 (en) | 2019-08-22 | 2022-04-19 | Asm Ip Holding B.V. | Exhaust duct |
| USD940837S1 (en) | 2019-08-22 | 2022-01-11 | Asm Ip Holding B.V. | Electrode |
| KR20210024423A (ko) | 2019-08-22 | 2021-03-05 | 에이에스엠 아이피 홀딩 비.브이. | 홀을 구비한 구조체를 형성하기 위한 방법 |
| USD979506S1 (en) | 2019-08-22 | 2023-02-28 | Asm Ip Holding B.V. | Insulator |
| KR20210024420A (ko) | 2019-08-23 | 2021-03-05 | 에이에스엠 아이피 홀딩 비.브이. | 비스(디에틸아미노)실란을 사용하여 peald에 의해 개선된 품질을 갖는 실리콘 산화물 막을 증착하기 위한 방법 |
| US11286558B2 (en) | 2019-08-23 | 2022-03-29 | Asm Ip Holding B.V. | Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film |
| KR102806450B1 (ko) | 2019-09-04 | 2025-05-12 | 에이에스엠 아이피 홀딩 비.브이. | 희생 캡핑 층을 이용한 선택적 증착 방법 |
| KR102733104B1 (ko) | 2019-09-05 | 2024-11-22 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
| US12469693B2 (en) | 2019-09-17 | 2025-11-11 | Asm Ip Holding B.V. | Method of forming a carbon-containing layer and structure including the layer |
| US11562901B2 (en) | 2019-09-25 | 2023-01-24 | Asm Ip Holding B.V. | Substrate processing method |
| CN112593212B (zh) | 2019-10-02 | 2023-12-22 | Asm Ip私人控股有限公司 | 通过循环等离子体增强沉积工艺形成拓扑选择性氧化硅膜的方法 |
| KR20210042810A (ko) | 2019-10-08 | 2021-04-20 | 에이에스엠 아이피 홀딩 비.브이. | 활성 종을 이용하기 위한 가스 분배 어셈블리를 포함한 반응기 시스템 및 이를 사용하는 방법 |
| TW202128273A (zh) | 2019-10-08 | 2021-08-01 | 荷蘭商Asm Ip私人控股有限公司 | 氣體注入系統、及將材料沉積於反應室內之基板表面上的方法 |
| TWI846953B (zh) | 2019-10-08 | 2024-07-01 | 荷蘭商Asm Ip私人控股有限公司 | 基板處理裝置 |
| KR102879443B1 (ko) | 2019-10-10 | 2025-11-03 | 에이에스엠 아이피 홀딩 비.브이. | 포토레지스트 하부층을 형성하기 위한 방법 및 이를 포함한 구조체 |
| US12009241B2 (en) | 2019-10-14 | 2024-06-11 | Asm Ip Holding B.V. | Vertical batch furnace assembly with detector to detect cassette |
| TWI834919B (zh) | 2019-10-16 | 2024-03-11 | 荷蘭商Asm Ip私人控股有限公司 | 氧化矽之拓撲選擇性膜形成之方法 |
| US11637014B2 (en) | 2019-10-17 | 2023-04-25 | Asm Ip Holding B.V. | Methods for selective deposition of doped semiconductor material |
| KR102845724B1 (ko) | 2019-10-21 | 2025-08-13 | 에이에스엠 아이피 홀딩 비.브이. | 막을 선택적으로 에칭하기 위한 장치 및 방법 |
| KR20210050453A (ko) | 2019-10-25 | 2021-05-07 | 에이에스엠 아이피 홀딩 비.브이. | 기판 표면 상의 갭 피처를 충진하는 방법 및 이와 관련된 반도체 소자 구조 |
| US11646205B2 (en) | 2019-10-29 | 2023-05-09 | Asm Ip Holding B.V. | Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same |
| KR102890638B1 (ko) | 2019-11-05 | 2025-11-25 | 에이에스엠 아이피 홀딩 비.브이. | 도핑된 반도체 층을 갖는 구조체 및 이를 형성하기 위한 방법 및 시스템 |
| US11501968B2 (en) | 2019-11-15 | 2022-11-15 | Asm Ip Holding B.V. | Method for providing a semiconductor device with silicon filled gaps |
| KR102861314B1 (ko) | 2019-11-20 | 2025-09-17 | 에이에스엠 아이피 홀딩 비.브이. | 기판의 표면 상에 탄소 함유 물질을 증착하는 방법, 상기 방법을 사용하여 형성된 구조물, 및 상기 구조물을 형성하기 위한 시스템 |
| US11450529B2 (en) | 2019-11-26 | 2022-09-20 | Asm Ip Holding B.V. | Methods for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface |
| CN112951697B (zh) | 2019-11-26 | 2025-07-29 | Asmip私人控股有限公司 | 基板处理设备 |
| CN112885692B (zh) | 2019-11-29 | 2025-08-15 | Asmip私人控股有限公司 | 基板处理设备 |
| CN112885693B (zh) | 2019-11-29 | 2025-06-10 | Asmip私人控股有限公司 | 基板处理设备 |
| JP7527928B2 (ja) | 2019-12-02 | 2024-08-05 | エーエスエム・アイピー・ホールディング・ベー・フェー | 基板処理装置、基板処理方法 |
| KR20210070898A (ko) | 2019-12-04 | 2021-06-15 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치 |
| JP7703317B2 (ja) | 2019-12-17 | 2025-07-07 | エーエスエム・アイピー・ホールディング・ベー・フェー | 窒化バナジウム層および窒化バナジウム層を含む構造体を形成する方法 |
| KR20210080214A (ko) | 2019-12-19 | 2021-06-30 | 에이에스엠 아이피 홀딩 비.브이. | 기판 상의 갭 피처를 충진하는 방법 및 이와 관련된 반도체 소자 구조 |
| TWI887322B (zh) | 2020-01-06 | 2025-06-21 | 荷蘭商Asm Ip私人控股有限公司 | 反應器系統、抬升銷、及處理方法 |
| JP7730637B2 (ja) | 2020-01-06 | 2025-08-28 | エーエスエム・アイピー・ホールディング・ベー・フェー | ガス供給アセンブリ、その構成要素、およびこれを含む反応器システム |
| US11993847B2 (en) | 2020-01-08 | 2024-05-28 | Asm Ip Holding B.V. | Injector |
| KR102882467B1 (ko) | 2020-01-16 | 2025-11-05 | 에이에스엠 아이피 홀딩 비.브이. | 고 종횡비 피처를 형성하는 방법 |
| KR102675856B1 (ko) | 2020-01-20 | 2024-06-17 | 에이에스엠 아이피 홀딩 비.브이. | 박막 형성 방법 및 박막 표면 개질 방법 |
| TWI889744B (zh) | 2020-01-29 | 2025-07-11 | 荷蘭商Asm Ip私人控股有限公司 | 污染物捕集系統、及擋板堆疊 |
| TWI871421B (zh) | 2020-02-03 | 2025-02-01 | 荷蘭商Asm Ip私人控股有限公司 | 包括釩或銦層的裝置、結構及其形成方法、系統 |
| KR20210100010A (ko) | 2020-02-04 | 2021-08-13 | 에이에스엠 아이피 홀딩 비.브이. | 대형 물품의 투과율 측정을 위한 방법 및 장치 |
| US11776846B2 (en) | 2020-02-07 | 2023-10-03 | Asm Ip Holding B.V. | Methods for depositing gap filling fluids and related systems and devices |
| KR20210103956A (ko) | 2020-02-13 | 2021-08-24 | 에이에스엠 아이피 홀딩 비.브이. | 수광 장치를 포함하는 기판 처리 장치 및 수광 장치의 교정 방법 |
| TW202146691A (zh) | 2020-02-13 | 2021-12-16 | 荷蘭商Asm Ip私人控股有限公司 | 氣體分配總成、噴淋板總成、及調整至反應室之氣體的傳導率之方法 |
| US11781243B2 (en) | 2020-02-17 | 2023-10-10 | Asm Ip Holding B.V. | Method for depositing low temperature phosphorous-doped silicon |
| US12122707B2 (en) * | 2020-02-20 | 2024-10-22 | Pilkington Group Limited | Coated glass articles |
| TWI895326B (zh) | 2020-02-28 | 2025-09-01 | 荷蘭商Asm Ip私人控股有限公司 | 專用於零件清潔的系統 |
| KR20210113043A (ko) | 2020-03-04 | 2021-09-15 | 에이에스엠 아이피 홀딩 비.브이. | 반응기 시스템용 정렬 고정구 |
| KR20210116240A (ko) | 2020-03-11 | 2021-09-27 | 에이에스엠 아이피 홀딩 비.브이. | 조절성 접합부를 갖는 기판 핸들링 장치 |
| KR20210116249A (ko) | 2020-03-11 | 2021-09-27 | 에이에스엠 아이피 홀딩 비.브이. | 록아웃 태그아웃 어셈블리 및 시스템 그리고 이의 사용 방법 |
| KR102775390B1 (ko) | 2020-03-12 | 2025-02-28 | 에이에스엠 아이피 홀딩 비.브이. | 타겟 토폴로지 프로파일을 갖는 층 구조를 제조하기 위한 방법 |
| US12173404B2 (en) | 2020-03-17 | 2024-12-24 | Asm Ip Holding B.V. | Method of depositing epitaxial material, structure formed using the method, and system for performing the method |
| KR102755229B1 (ko) | 2020-04-02 | 2025-01-14 | 에이에스엠 아이피 홀딩 비.브이. | 박막 형성 방법 |
| TWI887376B (zh) | 2020-04-03 | 2025-06-21 | 荷蘭商Asm Ip私人控股有限公司 | 半導體裝置的製造方法 |
| TWI888525B (zh) | 2020-04-08 | 2025-07-01 | 荷蘭商Asm Ip私人控股有限公司 | 用於選擇性蝕刻氧化矽膜之設備及方法 |
| KR20210127620A (ko) | 2020-04-13 | 2021-10-22 | 에이에스엠 아이피 홀딩 비.브이. | 질소 함유 탄소 막을 형성하는 방법 및 이를 수행하기 위한 시스템 |
| US11821078B2 (en) | 2020-04-15 | 2023-11-21 | Asm Ip Holding B.V. | Method for forming precoat film and method for forming silicon-containing film |
| KR20210128343A (ko) | 2020-04-15 | 2021-10-26 | 에이에스엠 아이피 홀딩 비.브이. | 크롬 나이트라이드 층을 형성하는 방법 및 크롬 나이트라이드 층을 포함하는 구조 |
| US11996289B2 (en) | 2020-04-16 | 2024-05-28 | Asm Ip Holding B.V. | Methods of forming structures including silicon germanium and silicon layers, devices formed using the methods, and systems for performing the methods |
| TW202143328A (zh) | 2020-04-21 | 2021-11-16 | 荷蘭商Asm Ip私人控股有限公司 | 用於調整膜應力之方法 |
| KR102866804B1 (ko) | 2020-04-24 | 2025-09-30 | 에이에스엠 아이피 홀딩 비.브이. | 냉각 가스 공급부를 포함한 수직형 배치 퍼니스 어셈블리 |
| KR20210132612A (ko) | 2020-04-24 | 2021-11-04 | 에이에스엠 아이피 홀딩 비.브이. | 바나듐 화합물들을 안정화하기 위한 방법들 및 장치 |
| KR20210132600A (ko) | 2020-04-24 | 2021-11-04 | 에이에스엠 아이피 홀딩 비.브이. | 바나듐, 질소 및 추가 원소를 포함한 층을 증착하기 위한 방법 및 시스템 |
| CN113555279A (zh) | 2020-04-24 | 2021-10-26 | Asm Ip私人控股有限公司 | 形成含氮化钒的层的方法及包含其的结构 |
| TW202208671A (zh) | 2020-04-24 | 2022-03-01 | 荷蘭商Asm Ip私人控股有限公司 | 形成包括硼化釩及磷化釩層的結構之方法 |
| KR102783898B1 (ko) | 2020-04-29 | 2025-03-18 | 에이에스엠 아이피 홀딩 비.브이. | 고체 소스 전구체 용기 |
| KR20210134869A (ko) | 2020-05-01 | 2021-11-11 | 에이에스엠 아이피 홀딩 비.브이. | Foup 핸들러를 이용한 foup의 빠른 교환 |
| JP7726664B2 (ja) | 2020-05-04 | 2025-08-20 | エーエスエム・アイピー・ホールディング・ベー・フェー | 基板を処理するための基板処理システム |
| KR20210137395A (ko) | 2020-05-07 | 2021-11-17 | 에이에스엠 아이피 홀딩 비.브이. | 불소계 라디칼을 이용하여 반응 챔버의 인시츄 식각을 수행하기 위한 장치 및 방법 |
| JP7736446B2 (ja) | 2020-05-07 | 2025-09-09 | エーエスエム・アイピー・ホールディング・ベー・フェー | 同調回路を備える反応器システム |
| KR102788543B1 (ko) | 2020-05-13 | 2025-03-27 | 에이에스엠 아이피 홀딩 비.브이. | 반응기 시스템용 레이저 정렬 고정구 |
| TW202146699A (zh) | 2020-05-15 | 2021-12-16 | 荷蘭商Asm Ip私人控股有限公司 | 形成矽鍺層之方法、半導體結構、半導體裝置、形成沉積層之方法、及沉積系統 |
| TW202147383A (zh) | 2020-05-19 | 2021-12-16 | 荷蘭商Asm Ip私人控股有限公司 | 基材處理設備 |
| KR102795476B1 (ko) | 2020-05-21 | 2025-04-11 | 에이에스엠 아이피 홀딩 비.브이. | 다수의 탄소 층을 포함한 구조체 및 이를 형성하고 사용하는 방법 |
| KR20210145079A (ko) | 2020-05-21 | 2021-12-01 | 에이에스엠 아이피 홀딩 비.브이. | 기판을 처리하기 위한 플랜지 및 장치 |
| KR102702526B1 (ko) | 2020-05-22 | 2024-09-03 | 에이에스엠 아이피 홀딩 비.브이. | 과산화수소를 사용하여 박막을 증착하기 위한 장치 |
| TW202212650A (zh) | 2020-05-26 | 2022-04-01 | 荷蘭商Asm Ip私人控股有限公司 | 沉積含硼及鎵的矽鍺層之方法 |
| TWI876048B (zh) | 2020-05-29 | 2025-03-11 | 荷蘭商Asm Ip私人控股有限公司 | 基板處理方法 |
| US20210374821A1 (en) * | 2020-06-01 | 2021-12-02 | Oldcastle Buildingenvelope, Inc. | Requirement-driven selection of building products and building product configurations |
| TW202212620A (zh) | 2020-06-02 | 2022-04-01 | 荷蘭商Asm Ip私人控股有限公司 | 處理基板之設備、形成膜之方法、及控制用於處理基板之設備之方法 |
| TW202208659A (zh) | 2020-06-16 | 2022-03-01 | 荷蘭商Asm Ip私人控股有限公司 | 沉積含硼之矽鍺層的方法 |
| KR20210158809A (ko) | 2020-06-24 | 2021-12-31 | 에이에스엠 아이피 홀딩 비.브이. | 실리콘이 구비된 층을 형성하는 방법 |
| TWI873359B (zh) | 2020-06-30 | 2025-02-21 | 荷蘭商Asm Ip私人控股有限公司 | 基板處理方法 |
| TWI896694B (zh) | 2020-07-01 | 2025-09-11 | 荷蘭商Asm Ip私人控股有限公司 | 沉積方法、半導體結構、及沉積系統 |
| KR102707957B1 (ko) | 2020-07-08 | 2024-09-19 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 |
| KR20220010438A (ko) | 2020-07-17 | 2022-01-25 | 에이에스엠 아이피 홀딩 비.브이. | 포토리소그래피에 사용하기 위한 구조체 및 방법 |
| KR20220011092A (ko) | 2020-07-20 | 2022-01-27 | 에이에스엠 아이피 홀딩 비.브이. | 전이 금속층을 포함하는 구조체를 형성하기 위한 방법 및 시스템 |
| TWI878570B (zh) | 2020-07-20 | 2025-04-01 | 荷蘭商Asm Ip私人控股有限公司 | 用於沉積鉬層之方法及系統 |
| US12322591B2 (en) | 2020-07-27 | 2025-06-03 | Asm Ip Holding B.V. | Thin film deposition process |
| KR20220021863A (ko) | 2020-08-14 | 2022-02-22 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 방법 |
| US12040177B2 (en) | 2020-08-18 | 2024-07-16 | Asm Ip Holding B.V. | Methods for forming a laminate film by cyclical plasma-enhanced deposition processes |
| TW202228863A (zh) | 2020-08-25 | 2022-08-01 | 荷蘭商Asm Ip私人控股有限公司 | 清潔基板的方法、選擇性沉積的方法、及反應器系統 |
| US11725280B2 (en) | 2020-08-26 | 2023-08-15 | Asm Ip Holding B.V. | Method for forming metal silicon oxide and metal silicon oxynitride layers |
| TW202229601A (zh) | 2020-08-27 | 2022-08-01 | 荷蘭商Asm Ip私人控股有限公司 | 形成圖案化結構的方法、操控機械特性的方法、裝置結構、及基板處理系統 |
| KR20220033997A (ko) | 2020-09-10 | 2022-03-17 | 에이에스엠 아이피 홀딩 비.브이. | 갭 충진 유체를 증착하기 위한 방법 그리고 이와 관련된 시스템 및 장치 |
| USD990534S1 (en) | 2020-09-11 | 2023-06-27 | Asm Ip Holding B.V. | Weighted lift pin |
| KR20220036866A (ko) | 2020-09-16 | 2022-03-23 | 에이에스엠 아이피 홀딩 비.브이. | 실리콘 산화물 증착 방법 |
| USD1012873S1 (en) | 2020-09-24 | 2024-01-30 | Asm Ip Holding B.V. | Electrode for semiconductor processing apparatus |
| TWI889903B (zh) | 2020-09-25 | 2025-07-11 | 荷蘭商Asm Ip私人控股有限公司 | 基板處理方法 |
| US12009224B2 (en) | 2020-09-29 | 2024-06-11 | Asm Ip Holding B.V. | Apparatus and method for etching metal nitrides |
| KR20220045900A (ko) | 2020-10-06 | 2022-04-13 | 에이에스엠 아이피 홀딩 비.브이. | 실리콘 함유 재료를 증착하기 위한 증착 방법 및 장치 |
| CN114293174A (zh) | 2020-10-07 | 2022-04-08 | Asm Ip私人控股有限公司 | 气体供应单元和包括气体供应单元的衬底处理设备 |
| TW202229613A (zh) | 2020-10-14 | 2022-08-01 | 荷蘭商Asm Ip私人控股有限公司 | 於階梯式結構上沉積材料的方法 |
| KR102873665B1 (ko) | 2020-10-15 | 2025-10-17 | 에이에스엠 아이피 홀딩 비.브이. | 반도체 소자의 제조 방법, 및 ether-cat을 사용하는 기판 처리 장치 |
| TW202217037A (zh) | 2020-10-22 | 2022-05-01 | 荷蘭商Asm Ip私人控股有限公司 | 沉積釩金屬的方法、結構、裝置及沉積總成 |
| TW202223136A (zh) | 2020-10-28 | 2022-06-16 | 荷蘭商Asm Ip私人控股有限公司 | 用於在基板上形成層之方法、及半導體處理系統 |
| TW202229620A (zh) | 2020-11-12 | 2022-08-01 | 特文特大學 | 沉積系統、用於控制反應條件之方法、沉積方法 |
| TW202229795A (zh) | 2020-11-23 | 2022-08-01 | 荷蘭商Asm Ip私人控股有限公司 | 具注入器之基板處理設備 |
| TW202235649A (zh) | 2020-11-24 | 2022-09-16 | 荷蘭商Asm Ip私人控股有限公司 | 填充間隙之方法與相關之系統及裝置 |
| KR20220076343A (ko) | 2020-11-30 | 2022-06-08 | 에이에스엠 아이피 홀딩 비.브이. | 기판 처리 장치의 반응 챔버 내에 배열되도록 구성된 인젝터 |
| US12255053B2 (en) | 2020-12-10 | 2025-03-18 | Asm Ip Holding B.V. | Methods and systems for depositing a layer |
| TW202233884A (zh) | 2020-12-14 | 2022-09-01 | 荷蘭商Asm Ip私人控股有限公司 | 形成臨限電壓控制用之結構的方法 |
| US11946137B2 (en) | 2020-12-16 | 2024-04-02 | Asm Ip Holding B.V. | Runout and wobble measurement fixtures |
| TW202232639A (zh) | 2020-12-18 | 2022-08-16 | 荷蘭商Asm Ip私人控股有限公司 | 具有可旋轉台的晶圓處理設備 |
| TW202242184A (zh) | 2020-12-22 | 2022-11-01 | 荷蘭商Asm Ip私人控股有限公司 | 前驅物膠囊、前驅物容器、氣相沉積總成、及將固態前驅物裝載至前驅物容器中之方法 |
| TW202231903A (zh) | 2020-12-22 | 2022-08-16 | 荷蘭商Asm Ip私人控股有限公司 | 過渡金屬沉積方法、過渡金屬層、用於沉積過渡金屬於基板上的沉積總成 |
| TW202226899A (zh) | 2020-12-22 | 2022-07-01 | 荷蘭商Asm Ip私人控股有限公司 | 具匹配器的電漿處理裝置 |
| USD980814S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas distributor for substrate processing apparatus |
| USD980813S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas flow control plate for substrate processing apparatus |
| USD981973S1 (en) | 2021-05-11 | 2023-03-28 | Asm Ip Holding B.V. | Reactor wall for substrate processing apparatus |
| USD1023959S1 (en) | 2021-05-11 | 2024-04-23 | Asm Ip Holding B.V. | Electrode for substrate processing apparatus |
| CN119528452A (zh) * | 2021-05-31 | 2025-02-28 | Agc株式会社 | 带有层叠膜的基材 |
| CN117412935A (zh) * | 2021-05-31 | 2024-01-16 | Agc株式会社 | 带有层叠膜的基材 |
| USD990441S1 (en) | 2021-09-07 | 2023-06-27 | Asm Ip Holding B.V. | Gas flow control plate |
| USD1099184S1 (en) | 2021-11-29 | 2025-10-21 | Asm Ip Holding B.V. | Weighted lift pin |
| USD1060598S1 (en) | 2021-12-03 | 2025-02-04 | Asm Ip Holding B.V. | Split showerhead cover |
| CN115196884A (zh) * | 2022-06-30 | 2022-10-18 | 深圳市楠轩光电科技有限公司 | 一种光学玻璃镀膜方法 |
| WO2024136836A1 (en) * | 2022-12-19 | 2024-06-27 | Gemtron Corporation | Infrared reflective tin oxide coatings and methods of making and using the same |
| CN117266423B (zh) * | 2023-11-21 | 2024-02-09 | 天津包钢稀土研究院有限责任公司 | 一种用于被动房和绿色建筑的保温隔热节能玻璃幕墙 |
| WO2025202635A1 (en) * | 2024-03-26 | 2025-10-02 | Pilkington Group Limited | Coated glass articles |
Family Cites Families (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3149989A (en) | 1961-12-01 | 1964-09-22 | Corning Glass Works | Radiation-reflecting medium |
| US4265974A (en) | 1976-11-01 | 1981-05-05 | Gordon Roy G | Electrically conductive, infrared reflective, transparent coatings of stannic oxide |
| US4187336A (en) | 1977-04-04 | 1980-02-05 | Gordon Roy G | Non-iridescent glass structures |
| US4287009A (en) | 1979-11-08 | 1981-09-01 | Bethlehem Steel Corporation | Method of producing an aluminum-zinc alloy coated ferrous product to improve corrosion resistance |
| JPS5890604A (ja) | 1981-11-25 | 1983-05-30 | Toyota Central Res & Dev Lab Inc | 赤外線遮蔽積層体 |
| JPS597043A (ja) | 1982-07-06 | 1984-01-14 | 株式会社豊田中央研究所 | 熱線遮蔽積層体 |
| US4601917A (en) | 1985-02-26 | 1986-07-22 | M&T Chemicals Inc. | Liquid coating composition for producing high quality, high performance fluorine-doped tin oxide coatings |
| US4590096A (en) | 1984-12-28 | 1986-05-20 | M&T Chemicals Inc. | Water vapor, reaction rate and deposition rate control of tin oxide film by CVD on glass |
| US4743506A (en) * | 1984-12-28 | 1988-05-10 | M&T Chemicals Inc. | Tin oxide coated article |
| GB8630791D0 (en) | 1986-12-23 | 1987-02-04 | Glaverbel | Coating glass |
| GB8630918D0 (en) | 1986-12-24 | 1987-02-04 | Pilkington Brothers Plc | Coatings on glass |
| US4853257A (en) | 1987-09-30 | 1989-08-01 | Ppg Industries, Inc. | Chemical vapor deposition of tin oxide on float glass in the tin bath |
| US5254392A (en) * | 1991-06-24 | 1993-10-19 | Ford Motor Company | Anti-iridescence coatings |
| US5168003A (en) | 1991-06-24 | 1992-12-01 | Ford Motor Company | Step gradient anti-iridescent coatings |
| US5543229A (en) | 1991-10-30 | 1996-08-06 | Asahi Glass Company Ltd. | Method of making a heat treated coated glass |
| JPH06150741A (ja) | 1992-10-30 | 1994-05-31 | Central Glass Co Ltd | 透明導電膜の形成方法 |
| JPH0794044A (ja) | 1993-09-22 | 1995-04-07 | Central Glass Co Ltd | 透明導電膜の形成方法 |
| JPH08268732A (ja) | 1995-03-30 | 1996-10-15 | Central Glass Co Ltd | 熱線反射ガラス |
| GB2302102B (en) | 1995-06-09 | 1999-03-10 | Glaverbel | A glazing panel having solar screening properties and a process for making such a panel |
| US6231971B1 (en) | 1995-06-09 | 2001-05-15 | Glaverbel | Glazing panel having solar screening properties |
| GB2302101B (en) | 1995-06-09 | 1999-03-10 | Glaverbel | A glazing panel having solar screening properties |
| JPH09169545A (ja) | 1995-12-21 | 1997-06-30 | Th Goldschmidt Ag | 酸化アンチモンドープした酸化スズからなる透過率を低下する層をガラスおよびガラスセラミックに熱分解的に製造する方法、およびそのための配合物 |
| US5780149A (en) | 1996-09-13 | 1998-07-14 | Libbey-Ownes-Ford Co. | Glass article having a solar control coating |
| GB9619134D0 (en) | 1996-09-13 | 1996-10-23 | Pilkington Plc | Improvements in or related to coated glass |
| US6124026A (en) * | 1997-07-07 | 2000-09-26 | Libbey-Owens-Ford Co. | Anti-reflective, reduced visible light transmitting coated glass article |
| US6218018B1 (en) * | 1998-08-21 | 2001-04-17 | Atofina Chemicals, Inc. | Solar control coated glass |
| GB9822338D0 (en) * | 1998-10-13 | 1998-12-09 | Glaverbel | Solar control coated glass |
| US6797388B1 (en) | 1999-03-18 | 2004-09-28 | Ppg Industries Ohio, Inc. | Methods of making low haze coatings and the coatings and coated articles made thereby |
-
2000
- 2000-10-30 US US09/699,681 patent/US6596398B1/en not_active Expired - Lifetime
-
2001
- 2001-10-19 AU AU81502/01A patent/AU779141B2/en not_active Ceased
- 2001-10-24 MY MYPI20014940A patent/MY127102A/en unknown
- 2001-10-24 IL IL14614501A patent/IL146145A/xx not_active IP Right Cessation
- 2001-10-24 NZ NZ515014A patent/NZ515014A/en not_active IP Right Cessation
- 2001-10-26 PE PE2001001064A patent/PE20020702A1/es not_active Application Discontinuation
- 2001-10-26 TW TW090126563A patent/TWI228108B/zh not_active IP Right Cessation
- 2001-10-26 SK SK1559-2001A patent/SK15592001A3/sk unknown
- 2001-10-26 ZA ZA200108848A patent/ZA200108848B/xx unknown
- 2001-10-29 DZ DZ010072A patent/DZ3130A1/xx active
- 2001-10-29 PL PL01350382A patent/PL350382A1/xx not_active Application Discontinuation
- 2001-10-29 EA EA200101031A patent/EA004211B1/ru not_active IP Right Cessation
- 2001-10-29 EP EP01309144A patent/EP1201616A3/en not_active Withdrawn
- 2001-10-29 AR ARP010105063A patent/AR031278A1/es active IP Right Grant
- 2001-10-30 EG EG20011155A patent/EG23121A/xx active
- 2001-10-30 MX MXPA01011068A patent/MXPA01011068A/es active IP Right Grant
- 2001-10-30 HU HU0104596A patent/HUP0104596A3/hu unknown
- 2001-10-30 SG SG200106698A patent/SG108284A1/en unknown
- 2001-10-30 BR BR0106856-3A patent/BR0106856A/pt not_active IP Right Cessation
- 2001-10-30 JP JP2001332304A patent/JP4498648B2/ja not_active Expired - Fee Related
- 2001-10-30 UA UA2001107390A patent/UA75574C2/uk unknown
- 2001-10-30 CZ CZ20013899A patent/CZ20013899A3/cs unknown
- 2001-10-30 UY UY26994A patent/UY26994A1/es unknown
- 2001-10-30 CN CN01137718A patent/CN1350990A/zh active Pending
- 2001-10-30 KR KR1020010067198A patent/KR20020033579A/ko not_active Ceased
-
2002
- 2002-02-05 SA SA02220665A patent/SA02220665B1/ar unknown
- 2002-08-09 HK HK02105827.6A patent/HK1044143A1/zh unknown
-
2003
- 2003-02-13 US US10/366,132 patent/US20030162037A1/en not_active Abandoned
- 2003-02-13 US US10/366,427 patent/US6656523B2/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8270060B2 (en) | 2009-09-25 | 2012-09-18 | Samsung Sdi Co., Ltd. | Infrared ray transmittance controlling panel including color modifying layer |
| US8390915B2 (en) | 2009-11-20 | 2013-03-05 | Samsung Sdi Co., Ltd. | Panel including thermochromic layer and electric conductive layer |
| US10031262B2 (en) | 2015-07-31 | 2018-07-24 | Hyundai Motor Company | Transparent substrate with multilayer anti-glare coating |
Also Published As
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100658376B1 (ko) | 피복된 태양광 조절 유리 및 이의 제조방법 | |
| JP4498648B2 (ja) | ソーラーコントロール被覆ガラス | |
| US20070190339A1 (en) | Coated substrate with high reflectance | |
| JP2000119045A (ja) | 太陽光制御被覆ガラス | |
| JPH04265253A (ja) | 被覆ガラス及びその製造法 | |
| AU759899B2 (en) | Solar control coated glass | |
| US20050196623A1 (en) | Solar control coated glass composition | |
| US6387514B1 (en) | Solar control coated substrate with high reflectance | |
| GB2248243A (en) | Glass coated with mixed oxide of aluminium and vanadium prior to coating with tin oxide | |
| US20080050569A1 (en) | Coated substrate with high reflectance | |
| MXPA99007735A (en) | Glass coated for so control | |
| HK1027338B (en) | Solar control coated glass | |
| NZ505140A (en) | A near infrared (NIR) wavelength film containing a tin oxide with a NIR dopant | |
| UA65556C2 (en) | A coated glass (variants), a method for making the same and coating absorbing radiation of the spectral region adjacent to that infrared |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0109 | Patent application |
Patent event code: PA01091R01D Comment text: Patent Application Patent event date: 20011030 |
|
| PG1501 | Laying open of application | ||
| A201 | Request for examination | ||
| PA0201 | Request for examination |
Patent event code: PA02012R01D Patent event date: 20061016 Comment text: Request for Examination of Application Patent event code: PA02011R01I Patent event date: 20011030 Comment text: Patent Application |
|
| E902 | Notification of reason for refusal | ||
| PE0902 | Notice of grounds for rejection |
Comment text: Notification of reason for refusal Patent event date: 20070820 Patent event code: PE09021S01D |
|
| E601 | Decision to refuse application | ||
| PE0601 | Decision on rejection of patent |
Patent event date: 20080102 Comment text: Decision to Refuse Application Patent event code: PE06012S01D Patent event date: 20070820 Comment text: Notification of reason for refusal Patent event code: PE06011S01I |