KR102293198B1 - 반도체 장치 및 그 제조 방법 - Google Patents

반도체 장치 및 그 제조 방법 Download PDF

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KR102293198B1
KR102293198B1 KR1020207026337A KR20207026337A KR102293198B1 KR 102293198 B1 KR102293198 B1 KR 102293198B1 KR 1020207026337 A KR1020207026337 A KR 1020207026337A KR 20207026337 A KR20207026337 A KR 20207026337A KR 102293198 B1 KR102293198 B1 KR 102293198B1
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layer
thin film
transistor
oxide semiconductor
film transistor
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KR20200108928A (ko
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슌뻬이 야마자끼
šœ뻬이 야마자끼
마사시 쯔부꾸
히로미찌 고도
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가부시키가이샤 한도오따이 에네루기 켄큐쇼
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    • H01L29/7869—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H01L29/66742—
    • H01L29/78606—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

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  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
  • Electrochromic Elements, Electrophoresis, Or Variable Reflection Or Absorption Elements (AREA)
  • Shift Register Type Memory (AREA)
KR1020207026337A 2009-09-16 2010-09-03 반도체 장치 및 그 제조 방법 Active KR102293198B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020217026228A KR20210104938A (ko) 2009-09-16 2010-09-03 반도체 장치 및 그 제조 방법

Applications Claiming Priority (6)

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JP2009215077 2009-09-16
JPJP-P-2009-215077 2009-09-16
JPJP-P-2010-035349 2010-02-19
JP2010035349 2010-02-19
KR1020197036810A KR102157249B1 (ko) 2009-09-16 2010-09-03 반도체 장치 및 그 제조 방법
PCT/JP2010/065568 WO2011033993A1 (en) 2009-09-16 2010-09-03 Semiconductor device and method for manufacturing the same

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KR1020197036810A Division KR102157249B1 (ko) 2009-09-16 2010-09-03 반도체 장치 및 그 제조 방법

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KR20200108928A KR20200108928A (ko) 2020-09-21
KR102293198B1 true KR102293198B1 (ko) 2021-08-24

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KR1020217026228A Ceased KR20210104938A (ko) 2009-09-16 2010-09-03 반도체 장치 및 그 제조 방법
KR1020127009518A Active KR101785745B1 (ko) 2009-09-16 2010-09-03 반도체 장치 및 그 제조 방법
KR1020177027950A Ceased KR20170116246A (ko) 2009-09-16 2010-09-03 반도체 장치 및 그 제조 방법
KR1020197036810A Active KR102157249B1 (ko) 2009-09-16 2010-09-03 반도체 장치 및 그 제조 방법
KR1020187032119A Active KR102057221B1 (ko) 2009-09-16 2010-09-03 반도체 장치 및 그 제조 방법
KR1020207026337A Active KR102293198B1 (ko) 2009-09-16 2010-09-03 반도체 장치 및 그 제조 방법

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KR1020127009518A Active KR101785745B1 (ko) 2009-09-16 2010-09-03 반도체 장치 및 그 제조 방법
KR1020177027950A Ceased KR20170116246A (ko) 2009-09-16 2010-09-03 반도체 장치 및 그 제조 방법
KR1020197036810A Active KR102157249B1 (ko) 2009-09-16 2010-09-03 반도체 장치 및 그 제조 방법
KR1020187032119A Active KR102057221B1 (ko) 2009-09-16 2010-09-03 반도체 장치 및 그 제조 방법

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US (4) US20110062435A1 (enExample)
EP (1) EP2478563B1 (enExample)
JP (13) JP5618724B2 (enExample)
KR (6) KR20210104938A (enExample)
CN (4) CN105609565B (enExample)
WO (1) WO2011033993A1 (enExample)

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